CN100367829C - Plasma exciting method - Google Patents
Plasma exciting method Download PDFInfo
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- CN100367829C CN100367829C CNB2005101263950A CN200510126395A CN100367829C CN 100367829 C CN100367829 C CN 100367829C CN B2005101263950 A CNB2005101263950 A CN B2005101263950A CN 200510126395 A CN200510126395 A CN 200510126395A CN 100367829 C CN100367829 C CN 100367829C
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Abstract
The present invention relates to the semiconductor etching technology and provides a plasma exciting method. While in energizing the plasma, different electric signals are respectively input into an upper electrode and a lower electrode to energize the plasma. The present invention has the advantages and positive effects that the asymmetry of the azimuth can be reduced and the uniformity of the plasma is improved, and thereby, the difference of the speed of the chemical reaction generated on the surface of a chip is caused to be smaller, the etching speed to be uniform and the plasma injury to be reduced, and thereby, the chip etching quality is increased.
Description
Technical field
The present invention relates to the semiconductor etching technology, be specifically related to a kind of new plasma exciting method that three-dimensional sub-distributing homogeneity such as can improve.
Background technology
At present, along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the working ability of semiconductor wafer constantly improves in this enterprise that will seek survival the product integrated circuit.Plasma device is widely used in the manufacturing process of making integrated circuit (IC) or MEMS device.Wherein inductance coupled plasma device (ICP) is widely used in the technologies such as etching.Under low pressure, reacting gas is under the exciting of radio-frequency power, produce ionization and form plasma, the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state in the plasma, various physics and chemical reaction take place and form volatile product in these active reactive groups and the material surface that is etched, thereby the material surface performance is changed.
Inductance coupled plasma device shown in Figure 1 is the structure that great majority adopt in the present semiconductor etching device.In semiconductor fabrication processes, the process gas that enters reaction chamber from the air inlet of quartz cover central authorities is formed plasma, the material of the plasma etching wafer surface of generation by the inductance-coupled coil ionization of top.Molecular pump is extracted the gas discharge of reaction chamber out in the system from the gas outlet.In this course, the radio-frequency power that makes gas produce ionization formation plasma comes from inductance-coupled coil, and the motivational techniques that are applied at present on the coil are to add the 13.56MHz radio frequency.Because air suction mode or reaction chamber is asymmetric, particle density, temperature and flux is asymmetric in the chamber that can induce reaction usually.The asymmetric meeting of air-flow causes the asymmetric of plasma conductivity, and the asymmetric meeting of plasma conductivity causes the inhomogeneous of power deposition, thereby causes the inhomogeneous of electron impact ionization.The size of wafer is added to 300mm from 100mm at present.The volume of reaction chamber also increases accordingly, and the asymmetry problem on limit, limit is more and more serious, and therefore present most etching apparatus all exists the uneven problem of etch rate, and this has caused very big adverse effect to semiconductor fabrication process.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is to improve plasma distribution uniformity, improve etching efficient, propose a kind of new plasma exciting method.
(2) technical scheme
For achieving the above object, by the following technical solutions of the present invention:
A kind of plasma exciting method in inductance coupled plasma device, when the article on plasma body encourages, adopts the asymmetrical signal of telecommunication of upper/lower electrode input to carry out plasma excitation.
Above-mentioned plasma exciting method, a kind of preferred scheme are article on plasma bodies when encouraging, and the signal of telecommunication of top electrode input pulse mode encourages, and the bottom electrode input radio frequency signal of telecommunication encourages.
Above-mentioned plasma exciting method, a kind of preferred scheme are article on plasma bodies when encouraging, and top electrode adopts the RF-wise excitation of high frequency, and bottom electrode adopts the RF-wise excitation of low frequency.
Above-mentioned plasma exciting method, a kind of preferred scheme are article on plasma bodies when encouraging, and top electrode adopts the RF-wise excitation of high frequency, and bottom electrode adopts pulse excitation.
Above-mentioned plasma exciting method, a kind of preferred scheme are article on plasma bodies when encouraging, and the mode that top electrode adopts high frequency to add low frequency encourages, and bottom electrode adopts pulse excitation.
Above-mentioned plasma exciting method, a kind of preferred scheme are article on plasma bodies when encouraging, and the mode that top electrode adopts high frequency to add low frequency encourages, and bottom electrode adopts RF excited.
(3) beneficial effect
The present invention carries out plasma excitation by adopting the asymmetrical signal of telecommunication of upper/lower electrode input, can reduce azimuthal asymmetric, improve the uniformity of plasma, thereby the chemical reaction velocity difference that wafer surface is taken place is less, etch rate is even, reduce plasma damage, thereby improve the quality of etched wafer.
Description of drawings
Fig. 1 is existing plasma etching equipment schematic diagram.
Wherein: 2, air inlet inlet; 3, reaction chamber; 6, gas outlet.
Embodiment
Below in conjunction with accompanying drawing, further describe semiconductor etching apparatus embodiment of the present invention, but be not used for limiting protection scope of the present invention.
Embodiment 1
The plasma exciting method of present embodiment is that top electrode encourages with pulse mode, and bottom electrode applies bias voltage with RF excited to substrate, and control arrives on-chip ion energy.
During concrete enforcement, can adopt coil of the prior art.Connect the pulse power at top electrode, bottom electrode connects the 13.56MHz radio-frequency power supply.This energisation mode has reduced because that the asymmetric particle density that causes that air-flow distributes distributes is inhomogeneous.This energisation mode makes that electron impact ionization greatly reduces between the after glow photophase.The diffusion of charged particle and the species that are excited between the after glow photophase makes because the asymmetric smoothing that previous pulse produced, thereby provides initial condition more uniformly for next pulse.Therefore it is azimuthal asymmetric to use the pulse excitation mode to reduce, and improves the uniformity of plasma, thereby the chemical reaction velocity difference that wafer surface is taken place is less, and etch rate is even, reduces plasma damage, thereby improves the quality of etched wafer.
Embodiment 2
The plasma exciting method of present embodiment is the RF excited of top electrode with high frequency, and bottom electrode applies bias voltage with the RF excited of low frequency to substrate, and control arrives on-chip ion energy.
During concrete enforcement, can adopt coil of the prior art.Connect the radio-frequency power supply of high frequency at top electrode, wherein frequency range is 10-200MHz, and specifically in the present embodiment, the frequency of employing is 27MHz; Connect the radio-frequency power supply of low frequency at bottom electrode, wherein frequency range is 1-5MHz, and specifically in the present embodiment, the frequency of employing is 2MHz.
Adopt such energisation mode, can reduce azimuthal asymmetricly, improve the uniformity of plasma, thereby the chemical reaction velocity difference that wafer surface is taken place is less, etch rate is even, improves the quality of etched wafer.
Embodiment 3
The plasma exciting method of present embodiment is the RF excited of top electrode with high frequency, and bottom electrode applies bias voltage with pulse excitation to substrate, and control arrives on-chip ion energy.
During concrete enforcement, can adopt plate electrode of the prior art.Connect the radio-frequency power supply of high frequency at top electrode, the frequency of employing is 100MHz; Connect the pulse power at bottom electrode.
Adopt such energisation mode, can reduce azimuthal asymmetricly, improve the uniformity of plasma, thereby the chemical reaction velocity difference that wafer surface is taken place is less, etch rate is even, improves the quality of etched wafer.
Embodiment 4
The plasma exciting method of present embodiment is that top electrode mixes the excitation of using high and low frequency, and bottom electrode applies bias voltage with pulse excitation to substrate, and control arrives on-chip ion energy.
During concrete enforcement, the supply frequency that connects at top electrode is respectively high frequency 27MHz, low frequency 2MHz; Connect the pulse power at bottom electrode.
Adopt such energisation mode, can reduce azimuthal asymmetricly, improve the uniformity of plasma, thereby the chemical reaction velocity difference that wafer surface is taken place is less, etch rate is even, improves the quality of etched wafer.
Embodiment 5
The plasma exciting method of present embodiment is that top electrode mixes the excitation of using high and low frequency, and bottom electrode applies bias voltage with pulse excitation to substrate, and control arrives on-chip ion energy.
During concrete enforcement, the supply frequency that connects at top electrode is respectively high frequency 100MHz, low frequency 3.5MHz; Connect the pulse power at bottom electrode.
Embodiment 6
The plasma exciting method of present embodiment is that top electrode mixes the excitation of using high and low frequency, and bottom electrode applies bias voltage with pulse excitation to substrate, and control arrives on-chip ion energy.
During concrete enforcement, the supply frequency that connects at top electrode is respectively high frequency 27MHz, low frequency 3.5MHz; Connect the 13.56MHz radio-frequency power supply at bottom electrode.
Embodiment 7
The plasma exciting method of present embodiment is that top electrode mixes the excitation of using high and low frequency, and bottom electrode applies bias voltage with pulse excitation to substrate, and control arrives on-chip ion energy.
During concrete enforcement, the supply frequency that connects at top electrode is respectively high frequency 100MHz, low frequency 2MHz; Connect the 13.56MHz radio-frequency power supply at bottom electrode.
Adopt such energisation mode, can reduce azimuthal asymmetricly, improve the uniformity of plasma, thereby the chemical reaction velocity difference that wafer surface is taken place is less, etch rate is even, improves the quality of etched wafer.
More than be preferred forms of the present invention, according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently all should fall into the scope of protection of the invention.
Claims (6)
1. a plasma exciting method is characterized in that in inductance coupled plasma device, when the article on plasma body encourages, adopts the asymmetrical signal of telecommunication of upper/lower electrode input to carry out plasma excitation.
2. plasma exciting method as claimed in claim 1, when it is characterized in that the article on plasma body encourages, the signal of telecommunication of top electrode input pulse mode encourages, and the bottom electrode input radio frequency signal of telecommunication encourages.
3. plasma exciting method as claimed in claim 1, when it is characterized in that the article on plasma body encourages, top electrode adopts the RF-wise excitation of high frequency, and bottom electrode adopts the RF-wise excitation of low frequency.
4. plasma exciting method as claimed in claim 1, when it is characterized in that the article on plasma body encourages, top electrode adopts the RF-wise excitation of high frequency, and bottom electrode adopts pulse excitation.
5. plasma exciting method as claimed in claim 1, when it is characterized in that the article on plasma body encourages, the mode that top electrode adopts high frequency to add low frequency encourages, and bottom electrode adopts pulse excitation.
6. plasma exciting method as claimed in claim 1, when it is characterized in that the article on plasma body encourages, the mode that top electrode adopts high frequency to add low frequency encourages, and bottom electrode adopts RF excited.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263950A CN100367829C (en) | 2005-12-08 | 2005-12-08 | Plasma exciting method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263950A CN100367829C (en) | 2005-12-08 | 2005-12-08 | Plasma exciting method |
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| Publication Number | Publication Date |
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| CN1852630A CN1852630A (en) | 2006-10-25 |
| CN100367829C true CN100367829C (en) | 2008-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005101263950A Active CN100367829C (en) | 2005-12-08 | 2005-12-08 | Plasma exciting method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116774327A (en) * | 2023-08-17 | 2023-09-19 | 江苏鲁汶仪器股份有限公司 | Manufacturing method and manufacturing system of micro lens and micro lens |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1132800A (en) * | 1994-12-16 | 1996-10-09 | 佳能株式会社 | Plasma processing method and plasma processing apparatus |
| CN1543662A (en) * | 2001-08-16 | 2004-11-03 | 应用材料有限公司 | Adjustable dual frequency voltage dividing plasma reactor |
| CN1581445A (en) * | 2003-08-01 | 2005-02-16 | 东京毅力科创株式会社 | Plasma etching method and plasma treatment apparatus |
-
2005
- 2005-12-08 CN CNB2005101263950A patent/CN100367829C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1132800A (en) * | 1994-12-16 | 1996-10-09 | 佳能株式会社 | Plasma processing method and plasma processing apparatus |
| CN1543662A (en) * | 2001-08-16 | 2004-11-03 | 应用材料有限公司 | Adjustable dual frequency voltage dividing plasma reactor |
| CN1581445A (en) * | 2003-08-01 | 2005-02-16 | 东京毅力科创株式会社 | Plasma etching method and plasma treatment apparatus |
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| CN1852630A (en) | 2006-10-25 |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |