CN116774327A - Manufacturing method and manufacturing system of micro lens and micro lens - Google Patents
Manufacturing method and manufacturing system of micro lens and micro lens Download PDFInfo
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- CN116774327A CN116774327A CN202311038331.XA CN202311038331A CN116774327A CN 116774327 A CN116774327 A CN 116774327A CN 202311038331 A CN202311038331 A CN 202311038331A CN 116774327 A CN116774327 A CN 116774327A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 108
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 106
- 238000005530 etching Methods 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 92
- 230000008569 process Effects 0.000 claims abstract description 58
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims description 102
- 230000001590 oxidative effect Effects 0.000 claims description 18
- 239000000460 chlorine Substances 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 8
- 238000001039 wet etching Methods 0.000 abstract description 8
- 238000001312 dry etching Methods 0.000 abstract description 6
- 238000009776 industrial production Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000006386 neutralization reaction Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000004556 laser interferometry Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application provides a manufacturing method, a manufacturing system and a microlens, which can provide a first gallium arsenide layer, wherein the first gallium arsenide layer is covered by a patterned mask layer, the mask layer covers part of the first gallium arsenide layer, the first gallium arsenide layer and the mask layer can be subjected to inductively coupled plasma etching by using process gas, the thicknesses of the first gallium arsenide layer and the mask layer are reduced until the mask layer is completely removed, and a patterned second gallium arsenide layer can be obtained, wherein the process gas is ionized into plasma by a radio frequency source output in a pulse mode, so that the gallium arsenide microlens with high speed, few defects and smoothness can be obtained, and the method of dry etching is adopted, so that the process period can be shortened, the reproducibility is higher than that of wet etching, a plurality of parameters which are easier to control are provided, the industrial production is facilitated, in addition, the processing precision is higher, the good anisotropy is realized, and the unnecessary material loss is reduced.
Description
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a method and a system for manufacturing a microlens.
Background
At present, semiconductor lasers are widely used, and in order to improve the beam quality, a micro lens can be used in the semiconductor lasers, for example, for a vertical cavity surface emitting laser with bottom surface light emission, the micro lens can be used as an output coupling lens to form a composite cavity structure, so that the beam quality of the vertical cavity surface emitting laser can be effectively improved.
For gallium arsenide (GaAs) microlenses, the preparation is mainly performed by a wet etching method at present, and the microlenses can be directly prepared on a substrate of a vertical cavity surface emitting laser, so that two-dimensional integration is facilitated, and a laser array with the microlenses is obtained. However, the process period of wet etching GaAs microlens is long, the processing precision is low, and the combination of the solution and the material must strictly control the conditions of substrate temperature, solution concentration, addition amount, etc., so that it has many limitations.
Disclosure of Invention
In view of the above, the present application aims to provide a manufacturing method, a manufacturing system and a microlens, which can shorten the process cycle by adopting a dry etching method, have higher reproducibility than wet etching, have a plurality of parameters which are easier to control, are favorable for industrial production, and can obtain a gallium arsenide microlens with high speed, few defects and smoothness. The specific scheme is as follows:
in one aspect, the present application provides a method for manufacturing a microlens, including:
providing a first gallium arsenide layer, wherein the first gallium arsenide layer is covered with a patterned mask layer;
performing inductively coupled plasma etching on the first gallium arsenide layer and the mask layer by using process gas until the mask layer is completely removed, so as to obtain a patterned second gallium arsenide layer; the process gas is ionized into a plasma by a radio frequency source output in a pulsed mode, the process gas comprising an etching gas.
Optionally, the etching gas comprises a chlorine-based gas.
Optionally, the chlorine-based gas comprises Cl 2 、BCl 3 And SiCl 4 At least one of them.
Optionally, the process gas further comprises an oxidizing gas.
Optionally, the inductively coupled plasma etching is performed on the first gallium arsenide layer and the mask layer by using a process gas until the mask layer is completely removed, so as to obtain a patterned second gallium arsenide layer, which includes:
determining a first content of the etching gas and a second content of the oxidizing gas according to a target size of the second gallium arsenide layer;
and introducing the etching gas with the first content and the oxidizing gas with the second content into the reaction chamber, and performing inductively coupled plasma etching on the first gallium arsenide layer and the mask layer by using the etching gas and the oxidizing gas until the mask layer is completely removed, so as to obtain a patterned second gallium arsenide layer.
Optionally, the oxidizing gas comprises O 2 And N 2 At least one of O.
Optionally, during inductively coupled plasma etching, the rf power of the first rf source connected to the coil is greater than or equal to 50W and less than or equal to 200W, the rf power of the second rf source connected to the bottom electrode is greater than or equal to 50W and less than or equal to 1000W, the temperature of the bottom electrode is less than or equal to 60 ℃, and the pressure of the reaction chamber is greater than or equal to 3mT and less than or equal to 40 mT.
Optionally, a second rf source connected to the bottom electrode has the pulse pattern, the second rf source having a pulse frequency greater than or equal to 100 Hz and less than or equal to 1000 Hz.
Optionally, the pulse duty cycle of the second radio frequency source connected to the lower electrode is greater than or equal to 20% and less than or equal to 80%.
Optionally, the process gas further comprises a fluorine-containing gas.
Optionally, the fluorine-containing gas comprises CF 4 、CHF 3 、CH 2 F 2 、C 2 F 6 And C 4 F 8 At least one of them.
Optionally, the process gas further comprises an inert gas.
Optionally, the flow rate of the inert gas in the process gas is less than or equal to 30%.
In still another aspect, an embodiment of the present application further provides a manufacturing system of a microlens, including:
etching equipment and a controller; the etching equipment is used for performing inductively coupled plasma etching on the first gallium arsenide layer and the mask layer by using process gas;
the controller is used for executing the manufacturing method of the micro lens.
In still another aspect, an embodiment of the present application further provides a microlens, where the microlens is obtained by using the method for manufacturing a microlens.
The embodiment of the application provides a manufacturing method, a manufacturing system and a microlens, which can provide a first gallium arsenide layer, wherein the first gallium arsenide layer is covered by a patterned mask layer, the mask layer covers part of the first gallium arsenide layer, the first gallium arsenide layer and the mask layer can be subjected to inductively coupled plasma etching by using process gas, the thicknesses of the first gallium arsenide layer and the mask layer are reduced until the mask layer is completely removed, the patterned second gallium arsenide layer can be obtained, the process gas is ionized into plasma by a radio frequency source output in a pulse mode, the movement of the plasma can be interfered by a pulse mode, the etching rate can be improved, and the transfer and neutralization of local charges can be realized within the pulse gap time, so that the gallium arsenide microlens with high rate, few defects and smoothness can be obtained. The process gas comprises etching gas which mainly plays an etching role, so that a pattern on a mask layer can be transferred to a first gallium arsenide layer to obtain a patterned second gallium arsenide layer, a dry etching method is adopted, the process period can be shortened, the reproducibility is higher than that of wet etching, a plurality of parameters which are easier to control are provided, the industrial production is facilitated, in addition, the processing precision is higher, the variability is good, and the unnecessary material loss can be reduced.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are some embodiments of the application and that other drawings may be obtained from these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a microlens according to an embodiment of the present application;
fig. 2 shows a schematic structural diagram of a first gaas layer according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a microlens according to an embodiment of the present application;
FIG. 4 is a top view of a microlens according to an embodiment of the present application;
fig. 5 is a block diagram of a manufacturing system of a microlens according to an embodiment of the present application.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
In the following detailed description of the embodiments of the present application, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration only, and in which is shown by way of illustration only, and in which the scope of the application is not limited for ease of illustration. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
In order to facilitate understanding, a method, a system and a microlens for manufacturing a microlens according to embodiments of the present application are described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a schematic flow chart of a method for manufacturing a microlens according to an embodiment of the present application is shown, and the method may include the following steps.
S101, providing a first gallium arsenide layer, and covering the patterned mask layer on the first gallium arsenide layer.
In the embodiment of the application, a first gallium arsenide (GaAs) layer may be provided, and the first gallium arsenide layer may be a GaAs substrate, or may be a GaAs epitaxial layer on other substrate materials, for example, a GaAs epitaxial layer on a silicon substrate. The growth method of the first gallium arsenide layer is not particularly limited, and may be a liquid-sealed czochralski method (Liquid Encapsulated Czochralski, LEC), a horizontal bridgman method (Horizontal Bridgman, HB), a vertical bridgman method (Vertical Bridgman, VB), a vertical gradient solidification method (Vertical Gradient Freeze, VGF), or the like, and those skilled in the art may select according to practical situations.
Specifically, a patterned mask layer may be covered on the surface of the first gaas layer, where the mask layer may have a microlens pattern, and referring to fig. 2, a schematic structural diagram of the first gaas layer provided in an embodiment of the present application is shown, and a mask layer 102 is provided above the first gaas layer 101, where the mask layer 102 has a convex structure, and the convex structure is similar to the shape of the convex lens, so that a gaas microlens may be prepared. In addition, the mask layer 102 may have a plurality of bump structures arranged in an array, thereby obtaining a gallium arsenide microlens array.
Specifically, the mask layer 102 may be an organic material processed by photolithography, gray exposure, nanoimprint, or etching, and the mask layer 102 may be Photoresist (PR), polymethyl methacrylate (polymethyl methacrylate, PMMA), or the like.
And S102, performing inductively coupled plasma etching on the first gallium arsenide layer and the mask layer by using process gas until the mask layer is completely removed, so as to obtain a patterned second gallium arsenide layer.
In the embodiment of the application, inductively coupled plasma (Inductive Coupled Plasma, ICP) processing equipment can be used for performing inductively coupled plasma etching on the first gallium arsenide layer 101 and the mask layer 102, and the inductively coupled plasma processing equipment is used for generating plasma and being used for etching by enabling energy of a radio frequency power supply to enter the inside of a reaction cavity in a magnetic field coupling mode through an inductance coil, so that the etching rate can be improved, etching damage can be reduced, and the smoothness of an etched surface can be improved.
Specifically, the first gallium arsenide layer 101 and the mask layer 102 may be etched by using a process gas to perform inductively coupled plasma etching at the same time, after the mask layer 102 at a certain position is etched, the first gallium arsenide layer 101 at the position may be etched continuously, so as to pattern the first gallium arsenide layer 101 until all the mask layer 102 is completely removed, at this time, the pattern of the mask layer 102 may be completely transferred onto the first gallium arsenide layer 101, so as to obtain a patterned second gallium arsenide layer.
In the embodiment of the application, the process gas can be ionized into high-energy plasma by radio-frequency ignition and the first gallium arsenide layer 101 and the mask layer 102 are etched, however, the high-energy plasma can scatter and reflect on the surface of the film layer, and charges are easy to accumulate in local areas on the surface of the film layer, especially in the material interface of the mask layer 102 and the first gallium arsenide layer 101 with larger difference of two charge conductivity, such as the virtual frame position in fig. 2, the charges are easy to accumulate in the position, so that the accumulated charges easily produce concentrated physical bombardment on the local areas, the etching is too heavy in the virtual frame position, the etching uniformity is reduced, and the appearance of the gallium arsenide microlens is affected.
Specifically, the process gas can be ionized into plasma by a radio frequency source, the radio frequency source can have a pulse mode, the process gas can be ionized into plasma by the pulse mode, the motion of the plasma can be disturbed by the pulse mode, the energy of the plasma reaching the surface of a material is further weakened, the incidence angle of the plasma in each direction is more balanced, the collision excitation frequency of secondary electrons and the process gas is increased, the concentration of reactive free radicals is increased, namely, the concentration of the plasma is increased, the etching rate can be increased, the transfer and the neutralization of local charges can be realized within the pulse gap time, the good lens etching result can be obtained, and the gallium arsenide microlens with high rate, few defects and smoothness can be obtained.
Specifically, referring to fig. 3, a schematic structural diagram of a microlens according to an embodiment of the present application includes a second gaas layer 103 obtained after etching is completed, where the second gaas layer 103 has a convex structure and can be used as a gaas microlens. The inductively coupled plasma etching is dry etching, can shorten the process period, has higher reproducibility than wet etching, has a plurality of parameters which are easier to control, is beneficial to industrial production, does not need to control a plurality of parameters which are not easy to control, such as substrate temperature, solution temperature, addition amount and the like, has higher processing precision, has good anisotropy and can reduce unnecessary material loss.
Specifically, referring to fig. 4, a top view of a microlens according to an embodiment of the present application is shown, where each circle is a microlens, so that a gallium arsenide microlens array may be obtained.
In the embodiment of the application, the process gas may include an etching gas, the etching gas mainly plays an etching role, the etching gas may include a chlorine-based gas, and the chlorine-based gas may include Cl 2 、BCl 3 And SiCl 4 At least one of the etching gases may be Cl 2 May also be Cl 2 And SiCl 4 Can change the plasma by adjusting the content of etching gasThe concentration, and thus the etching rate of GaAs, can be specifically in the range of 0.2 um/min to 2.0 um/min.
Specifically, a patterned sample to be etched (i.e., the first GaAs layer 101) may be placed in a vacuum reaction chamber, and then, a process gas is introduced into the reaction chamber to realize selective etching of a mask pattern to GaAs, and after a certain process time passes through a parameter adjustment, the pattern of the mask layer 102 is completely transferred, thereby obtaining a GaAs microlens.
Specifically, in inductively coupled plasma etching using an inductively coupled plasma processing apparatus, it is necessary to set appropriate etching process parameters in order to obtain gallium arsenide microlenses. The ICP processing device is provided with a first radio frequency source and a second radio frequency source, the first radio frequency source is connected with a coil, radio frequency power (upper radio frequency power) of the first radio frequency source can be larger than or equal to 50W and smaller than or equal to 200W, the second radio frequency source is connected with a lower electrode, radio frequency power (lower radio frequency power) of the second radio frequency source can be larger than or equal to 50W and smaller than or equal to 1000W, temperature of the lower electrode can be larger than or equal to 0 ℃ and smaller than or equal to 60 ℃, pressure of a reaction chamber can be larger than or equal to 3mT and smaller than or equal to 40 mT, and accordingly gallium arsenide microlenses with good morphology can be obtained.
Specifically, a pulse mode can be added on the basis of conventional inductively coupled plasma etching, that is, a second radio frequency source connected with the lower electrode can have a pulse function, the pulse frequency of the second radio frequency source can be greater than or equal to 100 Hz and less than or equal to 1000 Hz, and the appropriate pulse frequency can reduce pits caused by plasma bombardment.
Specifically, the second radio frequency source connected with the lower electrode also has the capacity of controlling the duty ratio, and the pulse duty ratio can be more than or equal to 20 percent and less than or equal to 80 percent, so that the appearance quality of the gallium arsenide microlens can be further improved.
In one possible implementation, the process gas may also include an oxidizing gas, which may include O 2 And N 2 At least one of O due to the difference in material characteristics between the mask layer 102 and the first GaAs layer 101The etching rate of the etching gas is different from the etching rate of the first gallium arsenide layer 101, for example, the etching rate of the first gallium arsenide layer 101 is faster, the etching rate of the mask layer 102 is slower, oxidizing gas can be added to adjust the etching rate, the etching rate of the mask layer 102 by the oxidizing gas is faster, and the etching rate of the first gallium arsenide layer 101 is slower, so that the etching selection ratio of the mask layer 102 and the first gallium arsenide layer 101 can be controlled by controlling the ratio of the oxidizing gas and the etching gas.
Specifically, the etching selectivity of the mask layer 102 and the first gallium arsenide layer 101 may be adjusted and controlled in the range of 0.5 to 2, and when the etching selectivity is less than 1, it indicates that the etching rate of the first gallium arsenide layer 101 is greater than that of the mask layer 102, and the thickness of the etched gallium arsenide lens is greater than that of the mask layer 102, i.e. the size of the obtained gallium arsenide lens is slightly greater than that of the mask pattern. When the etching selectivity is greater than 1, the etching rate of the first gallium arsenide layer 101 is smaller than that of the mask layer 102, and the thickness of the gallium arsenide lens is smaller than that of the mask layer 102, i.e. the size of the obtained gallium arsenide lens is slightly smaller than that of the mask pattern. When the etching selection ratio is equal to 1, the thickness of the gallium arsenide lens is equal to the thickness of the mask layer 102, the pattern size of the mask layer 102 is completely consistent with the pattern size of the second gallium arsenide layer 103, the gallium arsenide microlens is obtained, and the beam quality of the vertical cavity surface emitting laser is effectively improved.
Specifically, a suitable etching selection ratio may be selected according to the size of the gallium arsenide microlens, such as the thickness of the microlens, required by the customer to obtain the microlens desired by the customer. The first gallium arsenide layer 101 and the mask layer 102 are subjected to plasma etching by using a process gas until the mask layer 102 is completely removed to obtain a patterned second gallium arsenide layer 103, specifically, the first content of etching gas and the second content of oxidizing gas can be determined according to the target size, such as thickness, of the second gallium arsenide layer 103, namely, the proportion between the etching gas and the oxidizing gas is determined, then the process gas is introduced according to the proportion, the etching gas with the first content and the oxidizing gas with the second content are introduced into the reaction chamber, and the first gallium arsenide layer 101 and the mask layer 102 are subjected to plasma etching by using the etching gas and the oxidizing gas until the mask layer 102 is completely removed to obtain the patterned second gallium arsenide layer 103.
In the embodiment of the application, the process gas can also comprise fluorine-containing gas, and the combination and the dosage of the fluorine-containing gas are adjusted, so that the surface roughness of the micro lens can be effectively improved, the surface smoothness of the micro lens is improved, and the optical characteristics of the finished lens are improved. The fluorine-containing gas may include CF 4 、CHF 3 、CH 2 F 2 、C 2 F 6 And C 4 F 8 At least one of the above, the fluorine content in the fluorine-containing gas can be increased as much as possible, and the quality of the microlens can be further improved.
In embodiments of the present application, the process gas may also include an inert gas, such as N 2 The flow ratio of the inert gas flow in the process gas can be less than or equal to 30%, and the inert gas can dilute the etching gas, so that the etching rate is slowed down, and the surface defects are reduced.
In particular, the process may be precisely monitored using a photoemission spectrometer (Optical Emission Spectrometer, OES), a laser interferometry endpoint method (Interferometry End Point, IEP), or a combination of both, to control the over-etch.
In one embodiment, the etching process uses an inductively coupled plasma etcher, the sample used is a GaAs microlens pattern sheet, the size is 3cm x 3cm, and the film structure is a laminate of PR and GaAs. The sample can be transferred into the chamber of the etching machine, proper etching parameters are set, the upper radio frequency power ICP-Source can be 100-200W, the lower radio frequency power ICP-Bias can be 600-1000W, the pulse frequency can be set to 300-800Hz, the duty ratio can be set to 30-80%, and Cl 2 And BCl 3 Is respectively set to 30 sccm and 10 sccm, O 2 And CF (compact F) 4 The gas flows of (2) are respectively set to 10 sccm and 10 sccm, the cavity pressure can be 5 mT, the lower electrode temperature can be 20 ℃, and the pressure of the cooling gas He at the back of the sample can be 5Torr after introducing the mixed Cl 2 、BCl 3 、O 2 And CF (compact F) 4 After waiting for the gas, the radio frequency is ignited to generate plasma for etching, and the process monitoring of the PR mask can be realized through OES to finish etching.
In another embodiment, the etching process uses an inductively coupled plasma etcher, the sample used is a GaAs microlens pattern sheet, the size is 3cm x 3cm, and the film structure is a laminate of PR and GaAs. ICP-Source of 100-200W, ICP-Bias of 800-1000W, pulse frequency of 500-1000 Hz, duty cycle of 30-70%, BCl 3 The gas flow rate of (C) is 40-70 sccm, N 2 O and CHF 3 The gas flow rates of the gas are respectively 0-10 sccm and 0-20 sccm, the cavity pressure is 10 mT, the temperature of the lower electrode is 20 ℃, the pressure of cooling gas He on the back surface of the sample is 5 Torr, and the mixed BCl is introduced 3 、N 2 O and CHF 3 After waiting for the gas, the radio frequency ignites. And the process monitoring of the PR mask can be realized through IEP, and etching is completed.
The embodiment of the application provides a manufacturing method of a micro lens, which can provide a first gallium arsenide layer, wherein the first gallium arsenide layer is covered with a patterned mask layer, the mask layer covers part of the first gallium arsenide layer, the first gallium arsenide layer and the mask layer can be subjected to inductively coupled plasma etching by using process gas, the thicknesses of the first gallium arsenide layer and the mask layer are reduced until the mask layer is completely removed, the patterned second gallium arsenide layer can be obtained, the process gas is ionized into plasma by a radio frequency source output in a pulse mode, the pulse mode can interfere the movement of the plasma, the etching rate can be improved, and the transfer and neutralization of local charges can be realized within the pulse gap time, so that the gallium arsenide micro lens with high rate, few defects and smoothness can be obtained. The process gas comprises etching gas which mainly plays an etching role, so that a pattern on a mask layer can be transferred to a first gallium arsenide layer to obtain a patterned second gallium arsenide layer, a dry etching method is adopted, the process period can be shortened, the reproducibility is higher than that of wet etching, a plurality of parameters which are easier to control are provided, the industrial production is facilitated, in addition, the processing precision is higher, the variability is good, and the unnecessary material loss can be reduced.
Based on the above manufacturing method of the micro lens, the embodiment of the present application further provides a manufacturing system of the micro lens, and referring to fig. 5, a structural block diagram of the manufacturing system of the micro lens provided by the embodiment of the present application is shown, where the system may include:
an etching device 210 and a controller 220, wherein the etching device 210 is configured to perform inductively coupled plasma etching on the first gallium arsenide layer and the mask layer using a process gas; the controller 220 is used for executing the above-described manufacturing method of the microlens.
The embodiment of the application provides a manufacturing system of a micro lens, which can comprise etching equipment and a controller, wherein the etching equipment is used for performing inductively coupled plasma etching on a first gallium arsenide layer and a mask layer by using process gas; the controller is used for executing the manufacturing method of the micro lens. In this way, the pattern on the mask layer can be transferred to the first gallium arsenide layer to obtain the patterned second gallium arsenide layer, the process gas is ionized into plasma by the radio frequency source output in a pulse mode, the pulse mode can generate interference on the motion of the plasma, the etching rate can be improved, and the transfer and neutralization of local charges can be realized in the pulse gap time to obtain the gallium arsenide microlens with high rate, few defects and smoothness. The dry etching method can shorten the process period, has higher reproducibility than wet etching, has a plurality of parameters which are easier to control, is beneficial to industrial production, has higher processing precision, good anisotropy and can reduce unnecessary material loss.
Based on the manufacturing method of the micro lens, the embodiment of the application also provides the micro lens, which can be obtained by the manufacturing method of the micro lens, can obtain the gallium arsenide micro lens with high speed, few defects and smoothness, has shorter process period, better reproducibility and is beneficial to technological production.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for the device embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments for relevant points.
The foregoing is merely a preferred embodiment of the present application, and the present application has been disclosed in the above description of the preferred embodiment, but is not limited thereto. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present application or modifications to equivalent embodiments using the methods and technical contents disclosed above, without departing from the scope of the technical solution of the present application. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present application still fall within the scope of the technical solution of the present application.
Claims (15)
1. A method of manufacturing a microlens, comprising:
providing a first gallium arsenide layer, wherein the first gallium arsenide layer is covered with a patterned mask layer;
performing inductively coupled plasma etching on the first gallium arsenide layer and the mask layer by using process gas until the mask layer is completely removed, so as to obtain a patterned second gallium arsenide layer; the process gas is ionized into a plasma by a radio frequency source output in a pulsed mode, the process gas comprising an etching gas.
2. The method of claim 1, wherein the etching gas comprises a chlorine-based gas.
3. The method of claim 2, wherein the chlorine-based gas comprises Cl 2 、BCl 3 And SiCl 4 At least one of them.
4. The method of claim 1, wherein the process gas further comprises an oxidizing gas.
5. The method of claim 4, wherein inductively coupled plasma etching the first gallium arsenide layer and the mask layer with a process gas until the mask layer is completely removed, resulting in a patterned second gallium arsenide layer, comprises:
determining a first content of the etching gas and a second content of the oxidizing gas according to a target size of the second gallium arsenide layer;
and introducing the etching gas with the first content and the oxidizing gas with the second content into the reaction chamber, and performing inductively coupled plasma etching on the first gallium arsenide layer and the mask layer by using the etching gas and the oxidizing gas until the mask layer is completely removed, so as to obtain a patterned second gallium arsenide layer.
6. The method of claim 4, wherein the oxidizing gas comprises O 2 And N 2 At least one of O.
7. The method of claim 1, wherein during inductively coupled plasma etching, the rf power of the first rf source coupled to the coil is greater than or equal to 50W and less than or equal to 200W, the rf power of the second rf source coupled to the lower electrode is greater than or equal to 50W and less than or equal to 1000W, the temperature of the lower electrode is less than or equal to 60 ℃, and the pressure of the reaction chamber is greater than or equal to 3mT and less than or equal to 40 mT.
8. The method of claim 1, wherein a second rf source coupled to the bottom electrode has the pulse pattern, the second rf source having a pulse frequency greater than or equal to 100 Hz and less than or equal to 1000 Hz.
9. The method of claim 1, wherein the pulse duty cycle of the second rf source coupled to the bottom electrode is greater than or equal to 20% and less than or equal to 80%.
10. The method of claim 1, wherein the process gas further comprises a fluorine-containing gas.
11. The method of claim 10, wherein the fluorine-containing gas comprises CF 4 、CHF 3 、CH 2 F 2 、C 2 F 6 And C 4 F 8 At least one of them.
12. The method of claim 1, wherein the process gas further comprises an inert gas.
13. The method of claim 12, wherein the inert gas flow rate is less than or equal to 30% of the flow rate of the process gas.
14. A microlens fabrication system, comprising:
etching equipment and a controller; the etching equipment is used for performing inductively coupled plasma etching on the first gallium arsenide layer and the mask layer by using process gas;
the controller is configured to perform the method of manufacturing a microlens as claimed in any one of claims 1 to 13.
15. A microlens obtained by the method of manufacturing a microlens according to any one of claims 1 to 13.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118465890A (en) * | 2024-05-27 | 2024-08-09 | 苏州苏纳光电有限公司 | Preparation method of secondary-molding micro lens and micro lens structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1852630A (en) * | 2005-12-08 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma exciting method |
| CN102967891A (en) * | 2012-11-30 | 2013-03-13 | 中国科学院半导体研究所 | Method for manufacturing micro-lens array |
| CN111366996A (en) * | 2018-12-26 | 2020-07-03 | 江苏鲁汶仪器有限公司 | Method for preparing micro-lens array |
| CN113484940A (en) * | 2021-07-05 | 2021-10-08 | 苏州长光华芯光电技术股份有限公司 | Micro lens array, preparation method thereof and vertical cavity surface emitting laser structure |
| CN115494568A (en) * | 2022-11-17 | 2022-12-20 | 江苏邑文微电子科技有限公司 | Preparation method of micro lens array, micro lens array and application thereof |
| CN115494567A (en) * | 2022-11-17 | 2022-12-20 | 江苏邑文微电子科技有限公司 | Composite structure of microlens array nanometer grating, preparation method and application |
| CN115527849A (en) * | 2021-06-25 | 2022-12-27 | 江苏鲁汶仪器有限公司 | Atomic layer etching method based on GaN-based material |
-
2023
- 2023-08-17 CN CN202311038331.XA patent/CN116774327A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1852630A (en) * | 2005-12-08 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma exciting method |
| CN102967891A (en) * | 2012-11-30 | 2013-03-13 | 中国科学院半导体研究所 | Method for manufacturing micro-lens array |
| CN111366996A (en) * | 2018-12-26 | 2020-07-03 | 江苏鲁汶仪器有限公司 | Method for preparing micro-lens array |
| CN115527849A (en) * | 2021-06-25 | 2022-12-27 | 江苏鲁汶仪器有限公司 | Atomic layer etching method based on GaN-based material |
| CN113484940A (en) * | 2021-07-05 | 2021-10-08 | 苏州长光华芯光电技术股份有限公司 | Micro lens array, preparation method thereof and vertical cavity surface emitting laser structure |
| CN115494568A (en) * | 2022-11-17 | 2022-12-20 | 江苏邑文微电子科技有限公司 | Preparation method of micro lens array, micro lens array and application thereof |
| CN115494567A (en) * | 2022-11-17 | 2022-12-20 | 江苏邑文微电子科技有限公司 | Composite structure of microlens array nanometer grating, preparation method and application |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118465890A (en) * | 2024-05-27 | 2024-08-09 | 苏州苏纳光电有限公司 | Preparation method of secondary-molding micro lens and micro lens structure |
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Application publication date: 20230919 |