CN115494568A - Preparation method of micro lens array, micro lens array and application thereof - Google Patents
Preparation method of micro lens array, micro lens array and application thereof Download PDFInfo
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- CN115494568A CN115494568A CN202211461501.0A CN202211461501A CN115494568A CN 115494568 A CN115494568 A CN 115494568A CN 202211461501 A CN202211461501 A CN 202211461501A CN 115494568 A CN115494568 A CN 115494568A
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Abstract
The invention provides a preparation method of a micro-lens array, the micro-lens array and application thereof, relating to the technical field of photoelectric devices; the preparation method comprises the following steps: forming a first imprinting adhesive layer on a substrate; transferring the pattern on the nano-imprinting template to a substrate by utilizing imprinting and etching processes to form an array microlens unit; removing the first imprinting adhesive layer to obtain the micro-lens units of the array; forming a dielectric layer on the surfaces of the micro-lens units of the array to obtain a required micro-lens array; the thickness and the material of the dielectric layer are acquired according to the requirements of the focal length and/or the refractive index of a device applied to the micro-lens array; in the etching process, the proportion of hydrogen halide and fluoride in the processing gas adopted in the etching process is adjusted according to the ratio of the diameter D of the bottom surface of the microlens unit to be obtained to the thickness D of the center. The present application also provides a microlens array. The preparation method of the micro-lens array and the micro-lens array thereof have the advantages of high precision and flexible and adjustable parameters.
Description
Technical Field
The invention relates to the technical field of photoelectric device preparation methods, in particular to a preparation method of a micro lens array, the micro lens array and application thereof.
Background
The micro-nano structure is a functional structure which is artificially designed, has micrometer or nanometer scale characteristic dimension and is arranged according to a specific mode. With the development of the third-generation optical imaging technology to integration, light weight and ultra-large caliber, the traditional catadioptric optical system faces a plurality of bottlenecks, and the micro-nano structure optical element has the characteristics of light weight, high design freedom, flexible structure and the like, and shows remarkable advantages in the imaging field.
The micro lens and the micro lens array are used as a very important micro-nano structure optical component, and effective modulation of light beams can be realized by accurately controlling parameters such as micro lens distribution, focal length, duty ratio, numerical aperture and the like, so that the requirements of consumers are met. The micro lens obtained by effectively controlling the parameters of the micro lens can be widely applied to the field of photoelectron and semiconductor detection, and has good application prospect.
However, the current plane technology ion exchange method, photosensitive glass method, holographic method, fresnel wave zone lens method, photoresist hot melting method and the like for preparing the micro lens array are difficult to realize batch production due to the problems of large error, difficult control of precision, complex working procedures and the like. In order to solve this technical problem, a new method for manufacturing a microlens array has been proposed in recent years, which adjusts the size pitch of the microlens array using a nanoimprint technique, and realizes a 1:1, transferring the spherical crown shape of the micro lens in situ, which is beneficial to improving the forming consistency of the micro lens array and provides possibility for batch production of the micro lens array; however, because the parameters of the microlens arrays required by different devices or apparatuses are different, how to adjust and precisely control the parameters of different microlens arrays is still a big difficulty in the preparation of the microlens arrays.
Disclosure of Invention
The application aims to provide a preparation method of a micro-lens array, which solves the technical problems that the micro-lens array is difficult to adjust and the micro-lens array is difficult to control accurately in the prior art.
Another object of the present application is to provide a microlens array.
In another aspect, the present application further provides an application of the microlens array in the optical field.
In a first aspect, based on the above technical problem, the present application provides a method for manufacturing a microlens array, including:
providing a substrate, a nano-imprinting template with a micro-lens array pattern or a micro-lens array reverse pattern; forming a first imprinting adhesive layer on a substrate;
transferring the microlens array pattern to the first imprinting adhesive layer by using an imprinting process, or reversely transferring the microlens array reverse pattern to the first imprinting adhesive layer by using an imprinting process;
transferring the pattern on the first imprinting adhesive layer to a substrate by using an etching process to form an array of micro-lens units;
forming a dielectric layer on the surfaces of the micro-lens units of the array to obtain a required micro-lens array; the thickness and the material of the dielectric layer are acquired according to the requirements of the focal length and/or the refractive index of a device applied to the micro-lens array;
in the etching process, the proportion of hydrogen halide and fluoride in the processing gas adopted in the etching process is adjusted according to the ratio of the diameter D of the bottom surface of the micro-lens unit of the micro-lens array to be obtained to the central thickness D, so that the required micro-lens array is obtained.
Further, in some embodiments of the present application, adjusting the ratio of the process gas employed in the etching process comprises:
when D/D is more than or equal to 20, the volume ratio of the hydrogen halide to the fluoride is 1:4.5 to 8;
when D/D is more than or equal to 8 and less than 20, the volume ratio of the proportion of the hydrogen halide to the fluoride is 1:3.5 to 5;
when 2<D/d < 8, the ratio of hydrogen halide to fluoride is 1:2~4.
Further, in some embodiments of the present application, the method further comprises, during the etching process, according to the ratio of the bottom surface diameter D and the center thickness D of the micro lens unit of the micro lens array to be obtained, the polarization power of equipment for etching process is adjusted:
when the D/D is more than or equal to 20, the polarization power of equipment for carrying out the etching process is 150 to 300W;
when D/D is more than or equal to 8 and less than 20, the polarization power of equipment for carrying out the etching process is 80-150W;
and when the D/D is less than 8, the polarization power of equipment for performing the etching process is 0to 100W.
Further, in some embodiments of the present application, transferring the microlens array pattern onto the first imprinting glue layer using an imprinting process includes:
providing a transfer plate, wherein a second imprinting adhesive layer is arranged on the surface of the transfer plate;
imprinting on a transfer plate by using a nano imprinting template, and reversely transferring the micro-lens array pattern onto the transfer plate to obtain a reverse transfer plate;
imprinting the first imprinting adhesive layer by using a reverse transfer plate, and transferring the micro-lens array pattern to the first imprinting adhesive layer;
transferring the pattern on the first imprinting glue layer to the substrate by using an etching process, comprising:
and transferring the pattern on the nano-imprint template to the substrate by using an etching process by taking the reverse transfer plate as a mask.
Further, in some embodiments of the present application, reverse transferring the microlens array reverse pattern onto the first imprint glue layer using an imprint process includes:
and imprinting the nano imprinting template with the microlens array reverse pattern on the first imprinting adhesive layer, and reversely transferring the microlens array reverse pattern to the first imprinting adhesive layer to form a microlens array pattern.
Further, in some embodiments of the present application, the pressure in the chamber in which the etching process is performed is 5 to 50mtorr; and/or
The source power adopted by equipment for carrying out the etching process is 100 to 1000w; and/or
The time for carrying out the etching process is 60 to 180s; and/or
The flow of the fluoride is 100 to 1000SCCM; and/or
The flow rate of the hydrogen halide is 20 to 200SCCM.
Further, in some embodiments herein, the fluoride is selected from nitrogen fluorideCarbon tetrafluoride, CHF 3 、CH 2 F 2 、C 4 F 8 、C 4 F 6 、C 5 F 8 One or more of sulfur hexafluoride; and/or
The hydrogen halide is selected from one or more of hydrogen bromide, hydrogen chloride and hydrogen fluoride; and/or
The material of the dielectric layer is selected from Si aiming at the target application wave band 3 N 4 、SiO 2 One or more of SiON, glass, magnesium fluoride and calcium fluoride, or one or more of other dielectric layer materials with high transparency; and/or
The substrate is selected from any one of a silicon substrate, a silicon dioxide substrate, a glass substrate and a sapphire substrate.
Further, in some embodiments of the present application, forming a dielectric layer on a surface of a microlens unit of an array includes:
confirming the material of the dielectric layer according to the requirement of the refractive index of the device applied to the micro lens array;
selecting process gas for forming the dielectric layer according to the material of the dielectric layer;
forming a dielectric layer on the surface of the microlens array by using process gas at the temperature of 200-450 ℃ and the pressure of 0.5-2.0 Torr.
Further, in some embodiments of the present application, the thickness of the dielectric layer is 1/4 of the application wavelength λ or an odd multiple of λ/4; wherein the application wavelength is the wavelength of the working light wave when the micro-lens array is applied; and/or
The ratio of the thickness of the dielectric layer to the central thickness d is 1 to 100 to 2000.
In a second aspect, the present application further provides a microlens array, which is prepared by the method for preparing a microlens array provided in the first aspect.
In a third aspect, the present application further provides an application of the microlens array prepared by the method for preparing the microlens array provided in the first aspect or the microlens array provided in the second aspect in the optical field.
The application provides a preparation method of a micro-lens array, which simplifies the process of the pattern transfer process of the micro-lens array by utilizing a nano-imprinting technology and reduces the process error of the pattern transfer process of the micro-lens array; meanwhile, aiming at the micro-lens arrays with different D/D, the proportion of hydrogen halide and fluoride in the etching process is adjusted, so that the flexible adjustment of the parameters of the micro-lens array is realized, the requirements of devices applied to different micro-lens arrays are met, and the precision of the micro-lens array is improved; in addition, according to the preparation method of the micro-lens array, the dielectric layer is formed on the micro-lens unit, the focal length and the refractive index of the micro-lens array are adjusted, the error between the actually prepared micro-lens array and a theoretical value is further reduced, and the precision and the adjustment flexibility of the micro-lens array are improved; meanwhile, the dielectric layer can also play a role in isolating water vapor, so that the water vapor is prevented from damaging the micro-lens unit, and the influence of the water vapor on the micro-lens array is reduced. The method for preparing the micro-lens array has the advantages that the process steps are simple, the parameters of the micro-lens array can be flexibly adjusted, so that the requirements of different devices are met, the precision is high, and the popularization and the use of the micro-lens array are facilitated; and the micro-lens array can isolate water vapor and prolong the service life of the micro-lens array.
The application also provides a micro lens array, which adopts the nano-imprinting technology to transfer the pattern of the micro lens array, flexibly fine-adjusts the parameters and the precision of the micro lens array through the etching process and the dielectric layer, and is convenient for popularization and application.
The application also provides an application of the micro lens array, which adopts the high-precision micro lens array to be applied in the optical field, and improves the precision and the application range of devices in the optical field.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a microlens array provided in example 1 of the present application;
FIG. 2 is a top view of the pre-etched semi-finished device resulting from step 3;
FIG. 3 isbase:Sub>A schematic cross-sectional view A-A of the pre-etched semi-finished device obtained in step 3;
FIG. 4 isbase:Sub>A schematic cross-sectional view A-A of the etched semi-finished device obtained in step 4;
FIG. 5 isbase:Sub>A schematic cross-sectional view A-A of the microlens array obtained in step 5;
FIG. 6 isbase:Sub>A schematic cross-sectional view A-A ofbase:Sub>A microlens array obtained in example 1 of the present application;
FIG. 7 is a scanning lens image of the microlens array obtained in example 1 of the present application;
FIG. 8 is a cross-sectional scanning lens image of the microlens array obtained in example 1 of the present application;
FIG. 9 isbase:Sub>A schematic sectional view taken along line A-A ofbase:Sub>A microlens array obtained in example 3 of the present application;
FIG. 10 isbase:Sub>A schematic cross-sectional view taken along line A-A ofbase:Sub>A microlens array obtained in example 4 of the present application;
FIG. 11 is a cross-sectional scanning lens image of a microlens array obtained by a comparative example of the present application;
description of the main element symbols:
10-glass substrate, 20-microlens unit, 30-dielectric layer.
Detailed Description
The technical solutions of the present application will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Additionally, examples of various specific materials are provided herein, but one of ordinary skill in the art may recognize the application of other processes and/or the use of other materials.
The present application provides a method for manufacturing a microlens array, referring to fig. 1, including:
step 1, providing a substrate and a nano-imprint template with a micro-lens array pattern or a micro-lens array reverse pattern;
step 2, forming a first imprinting adhesive layer on the substrate;
step 3, transferring the microlens array pattern to the first imprinting adhesive layer by utilizing an imprinting process, or reversely transferring the microlens array reverse pattern to the first imprinting adhesive layer by utilizing the imprinting process, and referring to fig. 2 and 3;
step 4, transferring the pattern of the first imprinting adhesive layer to the substrate by using an etching process to form an array of micro-lens units, and referring to fig. 4;
step 5, forming a dielectric layer on the surfaces of the microlens units of the array to obtain the required microlens array, and referring to FIG. 5; the thickness and the material of the dielectric layer are acquired according to the requirements of the focal length and/or the refractive index of a device applied to the micro-lens array;
in the etching process, the proportion of hydrogen halide and fluoride in the processing gas adopted in the etching process is adjusted according to the ratio of the diameter D of the bottom surface of the micro-lens unit of the micro-lens array to be obtained to the central thickness D, so that the required micro-lens array is obtained.
It should be noted that, in the present application, the parameters of the microlens array required by the device can be determined by finite elementsThe parameters of the electromagnetic simulation software are obtained by simulation, and comprise the spherical curvature radius R of the micro-lens unit of the micro-lens array 0 The central thickness d of the micro-lens unit and the included angle theta between the tangent plane of the surface of the micro-lens unit and the bottom surface; referring to fig. 2, when the microlens is formed, the focal length f of the microlens is determined because: the magnitude of the focal length f is determined by the spherical radius of curvature R of the microlens unit 0 And refractive index n of substrate material constituting microlens 0 And the refractive index n of the material of the dielectric layer covering the microlenses 1 Determining, namely:
radius of curvature R of spherical surface 0 Is determined by the diameter D of the bottom surface of the microlens unit and the central thickness D of the microlens unit; namely:
since D and D are definite when the microlens is formed, the spherical radius of curvature R 0 Is also determined.
When the microlens is formed, the medium covering the light-emitting surface of the microlens is usually air, and therefore, the refractive index n of the material of the medium layer covering the microlens is 1 I.e. the refractive index of air; and the refractive index of air is 1, i.e.: when the light-emitting surface of the micro lens is not covered by other medium layers, the focal length of the micro lens is as follows:
wherein D is the diameter of the bottom surface of the micro lens unit;
wherein, L is the distance from the boundary position of the spherical surface of the microlens unit and the surface tangent plane of the microlens unit to the center of the bottom surface of the microlens unit in the projection of the microlens.
It should be noted that, in the present application, the diameter of the bottom surface of the microlens unit should be understood as the diameter of a circle formed by the vertical projection of the microlens unit on the substrate; the center thickness of a microlens unit is understood to be the distance from the apex of the microlens unit (the point of each microlens unit furthest from the substrate) to the shadow formed by the vertical projection of the microlens unit on the substrate. The micro-lens array comprises a plurality of micro-lens units which are arrayed on the substrate and have spherical bulges or approximate spherical bulges. Wherein the refractive index of the substrate material is determined according to the material of the substrate; the focal length of the microlens unit is determined by the required performance of the device to which the microlens array will be applied.
Therefore, before providing the nano-imprinting template with the micro-lens array pattern, relevant parameters of the micro-lens are simulated by using finite element electromagnetic simulation software according to the performance requirements of the device and the material of the substrate, and the nano-imprinting template with the micro-lens array pattern is prepared according to the parameters.
The finite element electromagnetic simulation software is any commercially available software capable of realizing three-dimensional simulation of the photoelectric component, such as ANSYS Maxwell finite element electromagnetic field simulation software.
In some embodiments, the material of the first imprint resist layer may be any one of an ultraviolet photoresist (including an ultraviolet positive photoresist, an ultraviolet negative photoresist), a deep ultraviolet photoresist, an X-ray resist, an electron beam resist, and an ion beam resist. Correspondingly, the first imprint resist layer may be exposed to light using a light source or a radiation source.
In view of the etching requirements, the preparation method provided by the applicant adds hydrogen halide in the etching gas to limit the transverse etching of the microlens unit, and on the basis, adjusts the proportion of the etching gas according to the D/D value to achieve the effects of limiting the transverse etching and limiting the transverse etching, so that the surface of the obtained microlens unit is infinitely close to the spherical surface.
In some embodiments, the substrate may be selected from any one of a silicon substrate, a silicon dioxide substrate, a glass substrate, a sapphire substrate. According to the wavelength range of application, different substrate materials capable of transmitting the wave band are selected. For example, a silicon substrate is suitable for an infrared light band, and a silicon dioxide, glass, sapphire and other substrates are suitable for an ultraviolet light band, a visible light band and an infrared light band.
In some embodiments, adjusting the ratio of the process gas employed in the etching process comprises:
when D/D is more than or equal to 20, the volume ratio of the hydrogen halide to the fluoride is 1:4.5 to 8;
when D/D is more than or equal to 8 and less than 20, the volume ratio of the proportion of the hydrogen halide to the fluoride is 1:3.5 to 5;
when 2<D/d < 8, the ratio of hydrogen halide to fluoride is 1:2~4.
For microlens arrays with different D/D values, the content of hydrogen halide in etching gas is not too low or too high, because too low hydrogen halide content is too high, the side wall protection of a microlens unit in the etching process is easy to be insufficient, and the etched lens cannot reach a good smooth transition state, even presents an uneven step shape on the surface of the microlens, and influences the optical performance; and too low hydrogen halide content will result in lower overall etching rate and affect process efficiency.
In some embodiments, the preparation method further includes, in the etching process, adjusting the polarization power of the apparatus performing the etching process according to a ratio of the bottom diameter D to the center thickness D of the microlens unit of the microlens array to be obtained:
when the D/D is more than or equal to 20, the polarization power of equipment for carrying out the etching process is 150 to 300W;
when D/D is more than or equal to 8 and less than 20, the polarization power of equipment for carrying out the etching process is 80-150W;
when 2<D/d is less than 8, the polarization power of the equipment for etching process is 0to 100W.
The etching gas is accelerated to bombard the surface of the sample under the action of the polarization voltage, the higher the polarization power is, the faster the etching rate in the direction of the polarization voltage is, and the isotropic etching is inhibited.
In some embodiments, transferring the microlens array pattern to the first imprinting glue layer using an imprinting process includes:
providing a transfer plate, wherein a second imprinting glue layer is arranged on the surface of the transfer plate;
imprinting on a transfer plate by using a nano imprinting template, and reversely transferring the micro-lens array pattern onto the transfer plate to obtain a reverse transfer plate;
imprinting the first imprinting adhesive layer by using a reverse transfer plate, and transferring the micro-lens array pattern to the first imprinting adhesive layer;
transferring the pattern on the first imprinting adhesive layer to the substrate by using an etching process, comprising:
and transferring the pattern on the nano-imprint template to the substrate by using an etching process by taking the reverse transfer plate as a mask.
The preparation cost of the nano-imprinting template is high, the preparation time is long, and each nano-imprinting process can generate slight damage to the nano-imprinting template; if a nano-imprinting template is adopted to imprint every time a micro-lens array is prepared, the nano-imprinting template is easily damaged or generates large errors quickly, and is difficult to continue to use. In some embodiments of the application, a transfer plate is prepared by using a nano-imprinting template, and a pattern of a micro-lens array is formed on a first imprinting adhesive layer by using the transfer plate as a template, so that the use frequency of the nano-imprinting template is reduced, and the cost of the transfer plate is far lower than that of the nano-imprinting template, thereby realizing the reduction of the production cost; meanwhile, when the precision of the transfer plate is reduced, a new transfer plate with the precision meeting the requirement can be manufactured through the nano-imprint template, and the consistency of the performance of the micro-lens array product is ensured.
In some embodiments, the transfer plate is obtained by:
providing a lining plate;
forming a second imprinting glue layer on the lining plate;
preheating at 50-70 ℃ for 1-2min, coating an anti-sticking layer on the second imprinting adhesive layer, and then performing heat treatment at 85-95 ℃ for 0.5-1min to obtain the transfer plate.
In some embodiments, the material of the backing sheet is selected from polyester materials, such as polyester backing sheets having a relatively high degree of cleanliness and a relatively low surface roughness.
In some embodiments, the pre-heating treatment is carried out for 1 to 2min at 50 to 70 ℃, then an anti-adhesive layer is coated on the second imprinting glue layer, and then the heat treatment is carried out for 0.5 to 1min at 85 to 95 ℃, wherein the steps comprise:
and (3) pre-baking at 60 ℃ for 1min, coating an anti-bonding layer on the second imprinting adhesive layer, and baking at 90 ℃ for 45s to obtain the transfer plate.
In some embodiments, the nano-imprinting template may be directly provided with a reverse imprinting process for reverse transferring the microlens array reverse pattern onto the first imprinting glue layer, including:
and imprinting the nano imprinting template with the microlens array reverse pattern on the first imprinting adhesive layer, and reversely transferring the microlens array reverse pattern to the first imprinting adhesive layer to form a microlens array pattern.
The imprinting technology is characterized in that a template with a micro-nano structure is tightly attached to imprinting glue by external mechanical force, the micro-nano structure on the template is gradually filled with the imprinting glue in a viscous flow state or a liquid state, then the imprinting glue is solidified, and the template and the imprinting glue are separated, so that the template structure graph can be copied to the imprinting glue in equal proportion. The micro-nano structure to be processed is a micro-lens array, the micro-nano structure is provided with convex lenses with spherical surfaces, the convex lenses are micro-lens units, patterns on a template of the corresponding micro-nano structure are usually set to be grooves with spherical arc surfaces of a plurality of arrays, the grooves correspond to the micro-lens units of the arrays one to one, the micro-lens units can be formed on an imprinting glue layer, and then the micro-lens units can be copied on a substrate through an etching process to form the micro-lens array.
Therefore, the "microlens array reverse pattern" in the present application is a pattern composed of the cavity of each microlens unit and the region between the respective cavities; the cavities in the pattern correspond to the microlens units one to one, and serve as cavities of the microlens units in the imprinting process for molding the microlens units. By "reverse transfer" in this application is understood the formation of microlens elements on the impression glue layer with a relief-matching inner surface of the cavities, using the cavities in the inverse pattern of the microlens array.
In some embodiments, the pressure in the chamber in which the etching process is performed is 5 to 50mTorr; and/or
The source power adopted by equipment for carrying out the etching process is 100 to 1000w; and/or
The time for carrying out the etching process is 60 to 180s; and/or
The flow of the fluoride is 100 to 1000SCCM; and/or
The flow rate of the hydrogen halide is 20 to 200SCCM.
Preferably, the pressure in the cavity for carrying out the etching process is 5 to 40mTorr; and/or
The source power adopted by equipment for carrying out the etching process is 100 to 800w; and/or
The flow of the fluoride is 100 to 800SCCM; and/or
The flow rate of the hydrogen halide is 50 to 180SCCM.
It should be noted that "SCCM" is a unit of gas mass flow, and SCCM (Standard Cubic meter per Minute) is a Standard milliliter per Minute; mTorr is the unit of pressure. mTorr is the pressure in micrometergol, which is one thousandth of the pressure in mmhg. 1mTorr equals 0.133Pa.
It should be noted that the etching time can be adjusted according to the central thickness of the microlens unit, and the higher the central thickness of the microlens unit is, the longer the etching time is.
In some embodiments, after forming the microlens unit of the array and before forming the dielectric layer on the surface of the microlens unit of the array, the method further comprises: and cleaning the surfaces of the microlens units of the array by using an organic solvent and water to remove organic impurities and particles on the surfaces of the microlens units and the substrate.
Wherein the organic solvent is selected from commercially available organic solvents such as acetone and ethanol. The water is selected from deionized water, pure water, and ultrapure water.
In some embodiments, cleaning the surfaces of the microlens elements of the array with an organic solvent and water comprises:
and cleaning the semi-finished device with the formed microlens unit for 2-5 min by using a mixed solution of acetone and ethanol, and ultrasonically washing the semi-finished device with deionized water for 0.5-3 min. Wherein the mass ratio of the acetone to the ethanol can be 1 to 100.
In some embodiments, the fluoride is selected from nitrogen fluoride, carbon tetrafluoride, sulfur hexafluoride, and CHF 3 、CH 2 F 2 、C 4 F 8 、C 4 F 6 、C 5 F 8 One or more of iso-fluorocarbon gases; and/or
The hydrogen halide is selected from one or more of hydrogen bromide, hydrogen chloride and hydrogen fluoride; and/or
The material of the dielectric layer is selected from Si 3 N 4 、SiO 2 One or more of SiON, glass, calcium fluoride, magnesium fluoride, or other transparent or translucent dielectric layer materials. The material of the dielectric layer can be selected according to the wavelength of the working light wave (hereinafter referred to as the application wavelength) when the micro-lens array provided by the application is applied, and the material which is transparent in the wave band range of the light is selected as the material of the dielectric layer; and in order to realize the antireflection function, the selection of the dielectric layer material can be as follows: refractive index n of air 0 （≈1）<Refractive index n of dielectric layer 1 <Refractive index n of microlens 2 Selecting the conditions of (4).
Wherein the theoretical reflectance R can be calculated by the following formula:
R=(n 0 ×n 2 -n 1 ^2 )^2/(n 0 ×n 2 +n 1 ^2 )^2
ideal refractive index n of antireflection film material 1 =
At this time, the theoretical reflectance may reach 0.
The dielectric layer is preferably made of a dielectric material with stable chemical properties, high corrosion resistance and high oxidation transparency, and has the functions of protection and reflection reduction. In addition, the dielectric layers can be also provided with multiple layers for compounding, and the dielectric layers of the multiple layers for compounding can be prepared from different materials, so that special antireflection effect can be realized, such as zero reflection or application in a large bandwidth range.
In some embodiments, forming a dielectric layer on a surface of a microlens element of an array includes:
confirming the material of the dielectric layer according to the requirement of the refractive index of the device applied to the micro lens array;
selecting process gas for forming the dielectric layer according to the material of the dielectric layer;
forming a dielectric layer on the surface of the microlens array by using process gas at the temperature of 200-450 ℃ and the pressure of 0.5-2.0 Torr.
Wherein "Torr" is a vacuum pressure unit, corresponding to a pressure of 1 mm mercury column.
The material of the dielectric layer may be the same as or different from the material of the microlens unit.
The material of the medium layer is deposited on the micro-lens unit to form a transparent medium film layer positioned on the surface of the substrate, so that the focal length of the micro-lens array and the refractive index of the micro-lens array can be changed, the precise adjustment of the focal length and the emergent light angle of the micro-lens array is realized, and the precision of the micro-lens array and the flexible adjustment of an application device are improved; and the water vapor can be isolated, so that the influence of the water vapor on the micro-lens unit is avoided, and the service life of the micro-lens array is prolonged.
In some embodiments, the deposition process on the dielectric layer is selected from one or more of Physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), and Atomic Layer Deposition (ALD).
When the deposition process on the dielectric layer is CVD and/or ALD, the process gases used to form the dielectric layer in the present application are adjusted depending on the material of the dielectric layer. Such as: when the material of the dielectric layer is SiO 2 The process gas may include: siH 4 、N 2 O、N 2 (ii) a When the material of the dielectric layer is Si 3 N 4 The process gas may include: siH 4 、NH 3 、N 2 。
In some embodiments, when the deposition process of the dielectric layer is CVD and/or ALD, the inter-electrode plate distance of equipment used for deposition is 250-500 mils; where mils is the unit of length, mils is a multiple of mils, 10mils = hundredths of an inch.
In some embodiments, when the material of the dielectric layer is SiO 2 When in use, the pressure in the process chamber of the adopted equipment is 1.0to 2.0Torr; when the material of the dielectric layer is Si, the pressure in a process chamber of the adopted equipment is 0.5-1.0 Torr; when the material of the dielectric layer is Si 3 N 4 In this case, the pressure in the process chamber of the apparatus is set to 1.0to 2.0Torr.
In some embodiments, when the material of the dielectric layer is SiO 2 Then, the distance between the polar plates of the adopted equipment is 350 to 500 mils; when the material of the dielectric layer is Si 3 N 4 And the distance between the polar plates of the adopted equipment is 350 to 500 mils.
In some embodiments, the ratio of the thickness of the dielectric layer to the central thickness is 1 to 100 to 2000, and the thickness of the dielectric layer is preferably 30 to 600nm; more preferably 50 to 500nm; the specific thickness can also be set according to the application wavelength lambda, and the thickness of the dielectric layer can be selected to be lambda/4 or odd times of lambda/4, so that the optical path difference of lambda/2 between the reflected light beams is achieved, the reflected light beams are mutually counteracted to reduce reflection, and the transmission of the micro lens is increased.
The thickness range of the dielectric layer means that the thickness of the dielectric layer can be adjusted in the range according to the focal length of the device to which the microlens array is applied, and the optimal solution of the thickness of the dielectric layer is different for different devices to which the microlens array is applied.
In some embodiments, the thickness of the first imprinting adhesive layer may be adjusted according to the central thickness d, so as to completely display the microlens array pattern; however, the thickness of the first imprinting glue layer is not too high, so that the phenomenon that excessive imprinting glue remains to influence the time required by the subsequent etching process is avoided.
Similarly, the thickness of the second imprinting glue layer can be adjusted according to the central thickness d.
Further, the thickness of the first stamping glue layer is 1.1 to 1.5 times of the central thickness d;
the thickness of the second imprinting glue layer is 1.1 to 2 times of the central thickness d.
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The present embodiment provides a method for manufacturing a microlens array, which includes:
s1: simulating by finite element electromagnetic simulation software to obtain the required parameters of the microlens array, wherein the parameters comprise the spherical curvature radius R of the microlens units of the microlens array 0 The central thickness d of the micro-lens unit and the included angle theta between the tangent plane of the surface of the micro-lens unit and the bottom surface; a ratio (D/D) of a bottom surface diameter D of the microlens unit to a center thickness D of the microlens unit; D/D is approximately equal to 15 in the embodiment; preparing a nano-imprinting template according to the parameters;
selecting a glass substrate 10, and cleaning the glass substrate 10 by using a hydrogen fluoride aqueous solution and a deionized water solution to remove impurities on the surface of the glass substrate;
preparing a lining plate, spin-coating a second imprinting adhesive layer on the lining plate, carrying out heat treatment at 60 ℃ for 1min, and then carrying out heat treatment at 90 ℃ for 1min to obtain a transfer plate;
s2: transferring the pattern on the nano-imprinting template to a transfer plate by utilizing an imprinting technology to obtain a reverse transfer plate;
s3: spin-coating a first imprinting adhesive layer on a glass substrate 10, carrying out heat treatment at 60 ℃ for 1min, then carrying out heat treatment at 90 ℃ for 1min, and then transferring the pattern on the reverse transfer plate to the first imprinting adhesive layer by using the reverse transfer plate as a template and utilizing an imprinting technology to obtain a semi-finished device;
s4: applying ESC voltage and controlling helium flow to make the semi-finished device be electrostatically adsorbed in the process chamber of the etching equipment; performing dry etching on the semi-finished device for 100s by using Inductively Coupled Plasma (ICP) etching technology, wherein the temperature of the chamber is 60 ℃, the pressure of the chamber is 8mTorr, and HBr/(HBr + SF) is 4 ) Is 1:5; the source power of the etching is 500W, and the bias power is 100W;
s5: cleaning impurities on the surface of the etched semi-finished device by using deionized water and an organic solvent, wherein the deionized water is firstly used for ultrasonic cleaning for 1min; cleaning with mixed solution of acetone and ethanol for 3min; ultrasonically cleaning for 1min by using deionized water to obtain a clean semi-finished device;
s6: calculating to obtain a difference value between the parameters of the microlens unit 20 on the semi-finished device and the parameters corresponding to the optical requirements of the device according to the optical requirements of the device and the parameters of the microlens unit 20 on the semi-finished device, such as the focal length, the refractive index and the like, so as to obtain the material and the thickness of the dielectric layer 30;
s7: depositing a layer of SiO on the surface of the microlens unit of the semi-finished device by using CVD technology 2 In a process chamber of an apparatus for CVD technology; temperature of 350 ℃, plate gap of 400mils, pressure of 1.2Torr, volume ratio: siH 4 :N 2 O:N 2 Is 1:7:30.
s8: after the deposition is finished, the product 1 with the central thickness D of the micro lens of about 37 μm, the diameter D of the bottom surface of the micro lens of about 560 μm, the D/D of about 15 and the thickness of the medium layer of about 60nm is obtained, the schematic diagram of the product refers to fig. 6, and the scanning lens pictures of the product refer to fig. 7 and fig. 8.
Example 2
In this example, compared to example 1, in S7, siH is used 4 、NH 3 、N 2 Depositing a silicon nitride film layer on the surface of the microlens unit of the semi-finished device for the process gas, wherein SiH 4 、NH 3 、N 2 The volume ratio is 5:1:90, the same procedure as in example 1 was repeated to obtain a microlens center thickness D =41 μm, a microlens base diameter D of about 585 μm, and a dielectric layer thickness of 100nmProduct 2.
Example 3
In this embodiment, compared to embodiment 1, the ratio (D/D) of the bottom surface diameter D of the microlens unit to the center thickness D of the microlens unit in S1: D/D is approximately equal to 25; in S4, the etching time is 120S, wherein the chamber temperature is 60 ℃, the chamber pressure is 10mTorr, HBr/(HBr + SF) 4 ) Is 1:6; the source power of the etching is 650W, and the bias power is 200W.
The remaining steps are the same as in example 1, and product 3 with focal length of central microlens thickness D =24.5 μm, microlens base diameter D of about 600 μm, and dielectric layer thickness of 80nm is obtained, see fig. 9.
Example 4
In this embodiment, compared to embodiment 1, the ratio (D/D) of the bottom surface diameter D of the microlens unit to the center thickness D of the microlens unit in S1: D/D is approximately equal to 6; in S4, the etching time is 80S, wherein the chamber temperature is 70 ℃, the chamber pressure is 8mTorr, HBr/(HBr + SF) 4 ) Is 1:4; the source power of the etching is 550W, and the bias power is 65W.
The remaining steps are the same as in example 1, and a product 4 with a focal length of the central thickness D =67 μm of the microlens, a diameter D of the bottom surface of the microlens of about 400 μm, and a dielectric layer thickness of 100nm is obtained, see fig. 10.
Comparative example 1
This comparative example compares HBr/(HBr + SF) in S4 to example 1 4 ) 1:7 the remaining steps are the same as in example 1, resulting in comparative product 1 with focal length of microlens center thickness D =530 μm, microlens bottom diameter D of about 20 μm, and dielectric layer thickness of 100nm, see fig. 11.
As can be seen from fig. 11, under the same etching time, the content of HBr is too low, which results in insufficient protection of the sidewalls of the microlens unit during the etching process, and the etched lens cannot reach a good smooth transition state, even the microlens surface presents an uneven step shape.
It can be known from the D/D values of the microlenses obtained in embodiments 1 to 4 that the values of the central thickness, the bottom surface diameter and the D/D of the microlens obtained by the method are almost the same as the values of the central thickness, the bottom surface diameter and the D/D of the microlens unit obtained by simulation, and thus, the microlens unit prepared by the method for preparing the microlens array provided by the application is matched with the parameters of the preset microlens unit, the precision is high, and the parameters of the microlens unit can be adjusted according to needs, which is beneficial to adjusting the parameters of the microlens unit for different devices, so that the applicability is better.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and these modifications or substitutions do not depart from the scope of the technical solutions of the embodiments of the present application.
Claims (11)
1. A method of fabricating a microlens array, comprising:
providing a substrate, a nano-imprinting template with a micro-lens array pattern or a micro-lens array reverse pattern;
forming a first imprinting glue layer on the substrate;
transferring the microlens array pattern onto the first imprinting adhesive layer by using an imprinting process, or transferring the microlens array reverse pattern onto the first imprinting adhesive layer by using an imprinting process;
transferring the pattern on the first imprinting adhesive layer to the substrate by using an etching process to form an array of micro-lens units;
forming a dielectric layer on the surfaces of the micro-lens units of the array to obtain a required micro-lens array; the thickness and the material of the dielectric layer are acquired according to the requirements of the focal length and/or the refractive index of a device applied to the micro-lens array;
in the etching process, the ratio of hydrogen halide to fluoride in the processing gas adopted in the etching process is adjusted according to the ratio of the diameter D of the bottom surface of the micro lens unit of the micro lens array to be obtained to the central thickness D, so that the required micro lens array is obtained.
2. The method of claim 1, wherein adjusting the ratio of the processing gas used in the etching process comprises:
when D/D is more than or equal to 20, the volume ratio of the hydrogen halide to the fluoride is 1:4.5 to 8;
when D/D is more than or equal to 8 and less than 20, the volume ratio of the hydrogen halide to the fluoride is 1:3.5 to 5;
when 2<D/d < 8, the ratio of the hydrogen halide to the fluoride is 1:2~4.
3. The method according to claim 2, further comprising, in the etching process, adjusting the polarization power of an apparatus for performing the etching process according to a ratio of the bottom surface diameter D to the center thickness D of the microlens unit of the microlens array to be obtained:
when the D/D is more than or equal to 20, the polarization power of equipment for carrying out the etching process is 150 to 300W;
when D/D is more than or equal to 8 and less than 20, the polarization power of equipment for carrying out the etching process is 80-150W;
and when the D/D is less than 8, the polarization power of equipment for carrying out the etching process is 0to 100W.
4. The method of claim 1, wherein transferring the microlens array pattern onto the first imprinting glue layer using an imprinting process comprises:
providing a transfer plate, wherein a second imprinting adhesive layer is arranged on the surface of the transfer plate;
imprinting the nano imprinting template with the micro-lens array pattern on the transfer plate, and reversely transferring the micro-lens array pattern to the transfer plate to obtain a reverse transfer plate;
imprinting the first imprinting adhesive layer by using the reverse transfer plate, and transferring the pattern of the micro-lens array to the first imprinting adhesive layer;
transferring the pattern on the first imprinting glue layer to the substrate by using an etching process, comprising:
and transferring the pattern on the nano-imprinting template to the substrate by using the first imprinting adhesive layer with the formed micro-lens array pattern as a mask through an etching process.
5. The method of claim 1, wherein transferring the microlens array inverse pattern onto the first embossed adhesive layer using an embossing process comprises:
and imprinting the nano imprinting template with the microlens array reverse pattern on the first imprinting adhesive layer, and reversely transferring the microlens array reverse pattern to the first imprinting adhesive layer to form a microlens array pattern.
6. The method for preparing the microlens array according to claim 1, wherein the pressure in the chamber in which the etching process is performed is 5 to 50mTorr; and/or
The source power adopted by equipment for carrying out the etching process is 100 to 1000w; and/or
The time for carrying out the etching process is 60 to 180s; and/or
The flow of the fluoride is 100 to 1000SCCM; and/or
The flow of the hydrogen halide is 20 to 200SCCM.
7. Method for manufacturing a microlens array according to claim 1, wherein the fluoride is selected from nitrogen fluoride, carbon tetrafluoride, CHF 3 、CH 2 F 2 、C 4 F 8 、C 4 F 6 、C 5 F 8 One or more of sulfur hexafluoride; and/or
The hydrogen halide is selected from one or more of hydrogen bromide, hydrogen chloride and hydrogen fluoride; and/or
The material of the dielectric layer is selected from Si 3 N 4 、SiO 2 One or more of SiON, glass, magnesium fluoride and calcium fluoride; and/or
The substrate is selected from any one of a silicon substrate, a silicon dioxide substrate, a glass substrate and a sapphire substrate.
8. The method of claim 1, wherein forming a dielectric layer on the surface of the microlens unit of the array comprises:
confirming the material of the dielectric layer according to the requirement of the refractive index of the device applied to the micro lens array;
selecting a process gas for forming the dielectric layer according to the material of the dielectric layer;
and forming the dielectric layer on the surface of the microlens array by using process gas at the temperature of 200-450 ℃ and under the temperature of 0.5-2.0 Torr.
9. The method of claim 1, wherein the thickness of the dielectric layer is 1/4 of the application wavelength λ or an odd multiple of λ/4; wherein the application wavelength is the wavelength of the working light wave when the micro-lens array is applied; and/or
The ratio of the thickness of the dielectric layer to the central thickness d is 1 to 100 to 2000.
10. A microlens array prepared by the method of any one of claims 1~9.
11. Use of the microlens array of claim 10 or the microlens array prepared by the method of claim 1~9 in the field of optics.
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| CN116774327A (en) * | 2023-08-17 | 2023-09-19 | 江苏鲁汶仪器股份有限公司 | Manufacturing method and manufacturing system of micro lens and micro lens |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102362201A (en) * | 2009-03-25 | 2012-02-22 | 东京毅力科创株式会社 | Method for manufacturing microlens array, and microlens array |
| CN209765087U (en) * | 2019-04-09 | 2019-12-10 | 苏州苏大维格科技集团股份有限公司 | Multilayer dynamic anti-counterfeiting film |
| CN112630872A (en) * | 2020-12-24 | 2021-04-09 | 华中科技大学 | Preparation method of three-dimensional micro-lens array |
| CN114114477A (en) * | 2020-08-31 | 2022-03-01 | 苏州苏大维格科技集团股份有限公司 | Micro-lens array light uniformizing structure and manufacturing method thereof, TOF lens and equipment |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102362201A (en) * | 2009-03-25 | 2012-02-22 | 东京毅力科创株式会社 | Method for manufacturing microlens array, and microlens array |
| CN209765087U (en) * | 2019-04-09 | 2019-12-10 | 苏州苏大维格科技集团股份有限公司 | Multilayer dynamic anti-counterfeiting film |
| CN114114477A (en) * | 2020-08-31 | 2022-03-01 | 苏州苏大维格科技集团股份有限公司 | Micro-lens array light uniformizing structure and manufacturing method thereof, TOF lens and equipment |
| CN112630872A (en) * | 2020-12-24 | 2021-04-09 | 华中科技大学 | Preparation method of three-dimensional micro-lens array |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116774327A (en) * | 2023-08-17 | 2023-09-19 | 江苏鲁汶仪器股份有限公司 | Manufacturing method and manufacturing system of micro lens and micro lens |
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