WO2017152477A1 - Apparatus for implementing impedance matching and power distribution, and semiconductor processing device - Google Patents

Apparatus for implementing impedance matching and power distribution, and semiconductor processing device Download PDF

Info

Publication number
WO2017152477A1
WO2017152477A1 PCT/CN2016/080366 CN2016080366W WO2017152477A1 WO 2017152477 A1 WO2017152477 A1 WO 2017152477A1 CN 2016080366 W CN2016080366 W CN 2016080366W WO 2017152477 A1 WO2017152477 A1 WO 2017152477A1
Authority
WO
WIPO (PCT)
Prior art keywords
impedance matching
power distribution
output port
matching circuit
branch
Prior art date
Application number
PCT/CN2016/080366
Other languages
French (fr)
Chinese (zh)
Inventor
成晓阳
韦刚
卫晶
李兴存
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Publication of WO2017152477A1 publication Critical patent/WO2017152477A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Definitions

  • the invention belongs to the technical field of microelectronic processing, and in particular relates to a device and a semiconductor processing device for implementing impedance matching and power distribution.
  • a semiconductor device usually uses a radio frequency power source as a plasma excitation source.
  • a radio frequency power source as a plasma excitation source.
  • an impedance matching device is required to be connected between the RF power source and the reaction chamber to implement the RF power source.
  • the input impedance matches the output impedance.
  • FIG. 1 is a schematic structural view of a typical semiconductor device.
  • the semiconductor device includes an impedance matching device 10, a current distributor, and a reaction chamber 100.
  • an inner coil 12 corresponding to a central region in the reaction chamber 100 is disposed.
  • the outer coil 13 corresponds to an edge region within the reaction chamber 100.
  • the input of the impedance matching device 10 is electrically connected to the RF power source 11 and the output terminal is connected to the current distributor for matching the input impedance and the output impedance of the RF power source 11.
  • the current distributors are electrically connected to the inner coil 12 and the outer coil 13, respectively. Specifically, as shown in FIG.
  • the current divider includes a current distribution circuit including a first inductor L1, a first adjustable capacitor C1, a first impedance R1, and a second impedance R2, wherein: the first inductor L1 After being connected in parallel with the first adjustable capacitor C1, the inner coil 12 and the first impedance R1 are sequentially connected in series to form a first branch; the outer coil 13 and the second impedance R2 are connected in series to form a second branch. The first leg and the second leg are connected in parallel between the output of the impedance matcher 10 and ground.
  • the RF current can be distributed between the inner coil 12 and the outer coil 13 by adjusting the first adjustable capacitor C1, so that the power output from the radio frequency power source 11 is distributed between the inner coil 12 and the outer coil 13 so as to be in the reaction chamber.
  • the central and edge regions within chamber 100 form a uniform plasma distribution.
  • the current distribution circuit includes a second inductor L2, a third impedance R3, a third inductor L3, a second adjustable capacitor C2, and a fourth impedance R4.
  • the second inductor L2, the inner coil 12 and the third impedance R3 are sequentially connected in series to form a first branch; the third inductor L3 and the second adjustable capacitor C2 are connected in parallel, and then sequentially connected in series with the outer coil 13 and the fourth impedance R4.
  • Form a second branch The first leg and the second leg are connected in parallel between the output of the impedance matcher 10 and ground. In this case, the power output from the radio frequency power source 11 can be distributed and adjusted between the inner coil 12 and the outer coil 13 by adjusting the second adjustable capacitor C2.
  • the current distribution circuit in FIG. 1 is composed of four electronic devices (ie, a first inductor L1, a first adjustable capacitor C1, a first impedance R1, and a second impedance R2);
  • the current distribution circuit of FIG. 2 is composed of five electronic devices (ie, a second inductor L2, a third impedance R3, a third inductor L3, a second tunable capacitor C2, and a fourth impedance R4).
  • the number of electronic devices is large, resulting in a relatively decentralized circuit structure for achieving impedance matching and power distribution functions, low integration, and high cost.
  • the present invention is directed to at least one of the technical problems existing in the prior art, and an apparatus and a semiconductor processing apparatus for achieving impedance matching and power distribution are proposed.
  • the present invention provides an apparatus for implementing impedance matching and power distribution, comprising a power distribution circuit and an impedance matching circuit, wherein an input end of the impedance matching circuit is electrically connected to a radio frequency power source,
  • the power distribution circuit includes at least two branches, each of the branches including an upstream end and a downstream end, and an upstream end of each of the branches is connected to an output end of the impedance matching circuit, and a downstream end thereof is used Connected to the external device, each of the branches is connected in series with a power distribution unit, and the power distribution unit includes only one first adjustable capacitance.
  • the device further includes an input port and an output port corresponding to the branch one-to-one
  • the impedance matching circuit is connected to the RF power source through the input port, and each of the output port groups includes a first output port and a second output port, and the first output port and the corresponding branch respectively
  • the downstream end of the path and one end of the external device corresponding to the branch are electrically connected, and the second output port is electrically connected to the level ground and the other end of the external device, respectively.
  • the external devices corresponding to the at least two branches are sequentially disposed, and at least between the second output port of the output port group corresponding to the external device located at the edge and the level ground There is a first fixed capacitor in series.
  • a first fixed capacitor is connected in series between the second output port of each of the other output port groups and the level ground .
  • the impedance matching circuit includes: a second adjustable capacitor connected in series between the input end and the output end of the impedance matching circuit; and a third adjustable capacitor, one end of which is connected to the input end of the impedance matching circuit The other end is connected to the ground level.
  • the impedance matching circuit further includes a first inductor, and the first inductor and the second adjustable capacitor are connected in series with each other and connected between an input end and an output end of the impedance matching circuit.
  • the impedance matching circuit further includes: a second fixed capacitor disposed in parallel at both ends of the second adjustable capacitor or in parallel at both ends of the third adjustable capacitor.
  • the means for achieving impedance matching and power distribution further includes a first detector, a second detector, a controller and an actuator.
  • the first detector is configured to detect a current of each of the branches and send a detection result to the controller; the second detector and the input port, an input end of the impedance matching circuit, and a
  • the controllers are respectively connected to detect a load impedance of the RF power source, and send the detection result to the controller;
  • the controller is connected to the executing mechanism, and configured to detect according to the first detector
  • the current and the load impedance detected by the second detector send an adjustment signal to the actuator;
  • the actuator is configured to adjust each of the first adjustable capacitance and the impedance match according to the adjustment signal Impedance tunable components in the circuit.
  • the first detector comprises a current sensor corresponding to the branch one-to-one, and the current sensor is connected in series on the corresponding branch road.
  • the present invention also provides a semiconductor processing apparatus including the apparatus for achieving impedance matching and power distribution provided by the above various aspects of the present invention.
  • the power distribution unit on each branch includes only one first adjustable capacitance, and therefore, two external devices are disposed on the upper portion of the top wall of the reaction chamber ( That is, when the inner coil and the outer coil are used, the power distribution circuit only needs two first adjustable capacitors, which reduces the number of electronic devices and improves the number of electronic devices compared with 4 to 5 electronic devices in the prior art.
  • the semiconductor processing device provided by the invention adopts the device for realizing impedance matching and power distribution provided by the invention, which not only can reduce the cost, but also can improve the integration degree of the device and reduce the volume of the device.
  • FIG. 1 is a schematic structural view of a typical semiconductor device
  • FIG. 2 is another circuit diagram of the current distribution circuit of FIG. 1;
  • FIG. 3 is a schematic structural diagram of a device for implementing impedance matching and power distribution applied to a reaction chamber according to an embodiment of the present invention
  • FIG. 4 is a flowchart of an operation of an apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention
  • FIG. 5 is a schematic structural diagram of a second apparatus for implementing impedance matching and power allocation according to an embodiment of the present disclosure
  • FIG. 6 is a schematic structural diagram of a third apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of a fourth apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a device for implementing impedance matching and power distribution applied to a reaction chamber according to an embodiment of the present invention.
  • the reaction chamber 30 includes a dielectric window 31 and a gas nozzle 32 extending from the outside of the reaction chamber 30 through the dielectric window 31 into the reaction chamber 30 for use in the reaction chamber 30. Transporting process gases;
  • the bottom region in the reaction chamber 30 is provided with a lower electrode base 33 for carrying the substrate S.
  • the lower electrode base 33 is electrically connected to the RF power source 37 through a matching unit 36, and the RF power source 37 is used to provide a negative bias to the substrate S.
  • the upper portion of the dielectric window 31 is provided with an inner coil 34 corresponding to a central region in the reaction chamber 30 and an outer coil 35 corresponding to an edge region in the reaction chamber 30.
  • the device for implementing impedance matching and power distribution is disposed between the RF power source RF and the inner coil 34 and the outer coil 35 for matching the input impedance and the output impedance of the RF power source RF and the RF power source RF.
  • the output RF power is distributed between the inner coil 34 and the outer coil 35 such that radio frequency power is coupled to the central and edge regions within the reaction chamber 30 via the inner coil 34 and the outer coil 35, respectively, thereby centering the central region and
  • the process gas in the edge region is excited to form a plasma, which is physically and/or chemically reacted with the surface of the substrate S by means of plasma to etch, deposit or otherwise process the substrate S.
  • the means for achieving impedance matching and power distribution includes a power distribution circuit 23, an impedance matching circuit 24, a first detector, a second detector 26, a controller 27, and an actuator 28.
  • the input end of the impedance matching circuit 24 is electrically connected to the RF power source RF.
  • the frequency of the RF power source RF may be any one of 400 kHz, 2 MHz, 13 MHz, 27 MHz, 4 MHz, and 60 MHz.
  • the power distribution circuit 23 includes at least two branches (231 and 231'), wherein the upstream end of the branch (231, 231') is connected to the output of the impedance matching circuit 24, downstream of the branch (231, 231') The terminal is used to connect to an external device.
  • the upstream end of the so-called branch (231, 231') refers to the end of the branch (231, 231') that is connected to the impedance matching circuit 24; the downstream end of the so-called branch (231, 231') refers to It is the end of the branch (231, 231') that is connected to the external device.
  • the so-called upstream and downstream, is in the direction of power transmission in the circuit.
  • the external device includes an inner coil 34 and an outer coil 35.
  • the branch 231 is connected to the inner coil 34
  • the branch 231' is connected to the outer coil 35.
  • the structure of the inner coil 34 or the outer coil 35 includes but is not limited to a plane line A coil structure of a ring structure, a three-dimensional coil structure or a partial planar portion.
  • a power distribution unit is connected in series to each branch (231, 231'), and the power distribution unit includes only one first adjustable capacitance (C11, C11'). That is, the first adjustable capacitor C11 is connected in series to the branch 231, and the first adjustable capacitor C11' is connected in series to the branch 231'.
  • the apparatus for implementing impedance matching and power distribution has two external devices (ie, the inner coil 34 and the outer coil 35) disposed above the reaction chamber 30, and the power is
  • the distribution circuit 23 correspondingly requires only two electronic devices (ie, only two first adjustable capacitors (C11 and C11') are required, wherein the first adjustable capacitor C11 corresponds to the inner coil 34, and the first adjustable capacitor C11' Corresponding to the outer coil 35), which reduces the number of electronic devices compared to the prior art requiring 4 to 5 electronic devices, and improves the compactness of the device for achieving impedance matching and power distribution.
  • integration while reducing costs. Especially when the number of external devices is increased, the number of electronic devices is reduced more and more, and the above advantages are more obvious.
  • the means for effecting impedance matching and power distribution further includes an input port 20 and an output port group (21, 22) that correspond one-to-one with the branches (231, 231').
  • the input of the impedance matching circuit 24 is coupled to the RF power source RF via the input port 20.
  • the power distribution circuit 23 includes two branches (231 and 231'), and accordingly, the device includes an output port group 21 corresponding to the branch 231 and an output port group 22 corresponding to the branch 231'.
  • the output port group 21 includes a first output port 211 and a second output port 212.
  • the first output port 211 is respectively connected to the downstream end of the branch 231 and the external device corresponding to the branch 231 (ie, the inner coil 34).
  • the output port group 22 includes a first output port 221 and a second output port 222, and the first output port 221 is electrically connected to a downstream end of the branch 231' and an external device (ie, the outer coil 35) corresponding to the branch 231', and the second output port 222 is connected to the external device (ie, the outer coil 35).
  • One end is electrically connected, and is electrically connected to the level via the first fixed capacitor C21 connection.
  • the input port 20, the first output port 211 and the second output port 212 of the output port group 21, and the first output port 221 and the second output port 222 of the output port group 22 may be configured as pluggable ports.
  • the plugging can be performed by plugging and unplugging. The overall installation and maintenance of the structure.
  • the first fixed capacitor C21 is further connected in series between the second output port 222 and the level ground, that is, the first adjustable capacitor C11' on the branch 231' corresponding to the outer coil 35 is connected in series.
  • the coil 35 is further connected in series with the first fixed capacitor C21, so that a structure in which the impedance is negative to positive and negative again is formed between the branch 231' and the level ground, so that the current and the voltage on the outer coil 35 are symmetrically distributed, and thus A uniform distribution of the plasma in the edge regions within the reaction chamber 30 is achieved.
  • the structure of the capacitor series inductance ie, the first adjustable capacitor C11 is connected to the inner coil 34 in series
  • the effect is that, under this resonance effect, the current on the corresponding branch 231 is the largest, and the potential of the connection point of the first adjustable capacitor C11 and the inner coil 34 is the highest.
  • the impedance matching circuit 24 includes a second adjustable capacitor C12, a third adjustable capacitor C13, and a first inductor L1.
  • the second adjustable capacitor C12 and the first inductor L1 are connected in series with each other and connected between the input end and the output end of the impedance matching circuit 24; one end of the third adjustable capacitor C13 is connected to the input end of the impedance matching circuit 24, and the other end is connected Level ground.
  • the first detector comprises two current sensors 25. Each of the branch 231 and the branch 231' is provided with a current sensor 25 for detecting the branch (231 or 231'), respectively. The current is sent to the controller 27 and the detected result.
  • the second detector 26 is connected to the input port 20, the input of the impedance matching circuit 24, and the controller 27, respectively, for detecting the load impedance of the RF power source RF, and transmitting the detected load impedance to the controller 27.
  • the controller 27 is coupled to the actuator 28 for transmitting an adjustment signal to the actuator 28 based on the current detected by the first detector and the load impedance detected by the second detector 26; the actuator 28 is operative to adjust The signal adjusts each of the first tunable capacitors (C11, C11') and the impedance tunable element in the impedance matching circuit 24, and the so-called impedance tunable element refers to an element capable of changing the impedance of the impedance matching circuit 24 by adjusting
  • the impedance tunable component comprises a second tunable capacitor C12 and a third tunable capacitor C13.
  • the actuator 28 is configured to adjust the first adjustable capacitor (C11, C11'), the second adjustable capacitor C12, and the third adjustable capacitor C13 according to the adjustment signal, that is, adjust the first adjustable capacitor (C11, C11' The position of the active ends of the second tunable capacitor C12 and the third tunable capacitor C13 to change the impedance values of the respective series connected in the circuit.
  • the actuator 28 includes a stepper motor.
  • the impedance matching circuit 24 is separately controlled by the two controllers to perform impedance matching and the power distribution circuit 23 performs power allocation.
  • the same controller 27 is used to control.
  • the impedance load matching circuit 24 and the power distribution circuit 23 can further reduce the cost and improve the integration as compared with the prior art.
  • step S1 the second detector 26, the controller 27, the actuator 28 and the impedance matching circuit 24 cooperate to perform impedance matching.
  • the controller 27 calculates an adjustment amount that each of the second tunable capacitor C12 and the third tunable capacitor C13 needs to be adjusted according to the load impedance detected by the second detector 26, and sends a corresponding adjustment signal to the actuator 28 to execute
  • the mechanism 28 adjusts the positions of the movable ends of the second tunable capacitor C12 and the third tunable capacitor C13 according to the adjustment signal.
  • step S2 the controller 27 determines whether the impedance matching is currently implemented according to the load impedance detected by the second detector 26, and if yes, proceeds to step S3; if not, returns to step S1.
  • step S3 the first detector, the controller 27, the actuator 28 and the power distribution circuit 23 cooperate to start power distribution. Specifically, the first detector detects the current of each branch (231, 231') and sends the detection result to the controller 27, which calculates each of the currents based on the current of each branch (231, 231'). The power of the branch (231, 231'), and based on the power value, calculates an adjustment amount that each of the first tunable capacitors (C11, C11') needs to adjust, and transmits a corresponding adjustment signal to the actuator 28, the actuator 28 The position of the active end of each of the first tunable capacitors (C11, C11') is adjusted in accordance with the adjustment signal.
  • step S4 the controller 27 determines in real time whether the required power allocation ratio has been reached based on the power on each of the branches (231, 231'), and if so, proceeds to step S5; if not, returns to step S3.
  • step S5 the controller 27 determines whether impedance matching is currently achieved based on the load impedance detected by the second detector 26; if yes, the process proceeds to step S6; if not, returns to step S1.
  • step S6 the controller 27 determines whether the process is completed, and if so, the process ends; if not, proceeds to step S5.
  • step S4 two branches can be determined according to whether the current ratio flowing through the two branches (231, 231') (i.e., the ratio of the current flowing through the outer coil 35 and the inner coil 34) reaches the required current distribution ratio. Whether the power on the road (231, 231') reaches the required power distribution ratio.
  • the ratio of the current flowing through the outer coil 35 and the inner coil 34 required in different processes is also different. For example, the ratio of the current flowing through the outer coil 35 required by a process A to the current flowing through the inner coil 34 is 1:3.
  • the ratio of the current flowing through the outer coil 35 required by the process B to the current flowing through the inner coil 34 is 1:1, and the ratio of the current flowing through the outer coil 35 required by the process C to the current flowing through the inner coil 34 is 3: 1, etc., this ratio can be limited to a certain range according to specific process requirements (for example, the current flowing through the outer coil 35 and the current flowing through the inner coil 34) Any ratio of the ratio is in the range of 1:9 to 9:1.
  • the impedance matching circuit 24 adopts the circuit structure shown in FIG. 3 in this embodiment, the present invention is not limited thereto. In practical applications, the impedance matching circuit 24 may also adopt other circuit structures. Examples are as follows:
  • FIG. 5 a schematic structural diagram of a second apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention is shown.
  • the impedance matching circuit 24 of FIG. 5 omits the first inductance L1 of FIG. 3, which can also achieve impedance matching, and has fewer electronic devices. Therefore, the present embodiment The volume of the device provided for achieving impedance matching and power distribution is further reduced and the cost is further reduced.
  • FIG. 6 a schematic structural diagram of a third apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention is shown.
  • the impedance matching circuit 24 of FIG. 6 further includes a second fixed capacitor C22, which is disposed in parallel at both ends of the second adjustable capacitor C12, thereby enabling higher precision impedance matching adjustment. , reducing the occurrence of overshoot problems, making the stability of the impedance matching adjustment process better.
  • FIG. 7 a schematic structural diagram of a fourth apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention is shown.
  • the impedance matching circuit 24 of FIG. 7 further includes a second fixed capacitor C22, and the second fixed capacitor C22 is disposed in parallel at both ends of the third adjustable capacitor C13, so that the second adjustable capacitor can be reduced.
  • the current limit of the C12 enables high power applications of the device.
  • the apparatus for implementing impedance matching and power allocation provided by the embodiments of the present invention is not limited to the case of applying two external devices, and may also be used for the case of at least three external devices, and the specific circuit design.
  • the principle is similar to the design principle when applying two external devices, and will not be described in detail here; and, the external device is not limited to the case of the coil, It can also be other devices that can be used.
  • At least three external devices when at least three external devices are sequentially nested, at least three external devices respectively correspond to a central region of the reaction chamber 30 that is radially divided and at least two annular regions, each of the external devices. It is used to excite gas in the corresponding region to form a plasma.
  • at least the second output port of the output port group corresponding to the external device located at the extreme edge is connected in series with the level ground.
  • first fixed capacitor C21 in order to further improve the uniformity of the plasma distribution in the reaction chamber 30, in addition to the output port group corresponding to the externally located external device, in each of the remaining output port groups A first fixed capacitor C21 is connected in series between the second output port and the level ground.
  • the embodiment further provides a semiconductor processing apparatus using the apparatus for implementing impedance matching and power distribution provided by the above embodiments of the present invention.
  • the semiconductor body processing apparatus provided by the embodiment of the present invention can reduce the cost, and can improve the integration degree of the device and reduce the volume of the device, because it adopts the device for implementing impedance matching and power distribution provided by the above embodiments. .

Abstract

The present invention provides an apparatus for implementing impedance matching and power distribution, and a semiconductor processing device. The apparatus comprises a power distribution circuit and an impedance matching circuit. An input end of the impedance matching circuit is used for being electrically connected to a radio frequency power supply. The power distribution circuit comprises at least two branches, and each branch comprises an upstream end and a downstream end. The upstream end of each branch is connected to an output end of the impedance matching circuit, and the downstream end of each branch is used for being connected to an external component. Each branch is serially connected to a power distribution unit, and the power distribution unit only comprises one first adjustable capacitor. The apparatus and the semiconductor processing device provided in the present invention have low costs, high integration and small volumes.

Description

用于实现阻抗匹配和功率分配的装置及半导体加工设备Device and semiconductor processing device for achieving impedance matching and power distribution 技术领域Technical field
本发明属于微电子加工技术领域，具体涉及一种用于实现阻抗匹配和功率分配的装置及半导体加工设备。The invention belongs to the technical field of microelectronic processing, and in particular relates to a device and a semiconductor processing device for implementing impedance matching and power distribution.
背景技术Background technique
半导体设备通常采用射频电源作为等离子体激发源，为了将射频电源的功率尽可能完全地传递至半导体设备的反应腔室内，需要在射频电源和反应腔室之间串联阻抗匹配器，以实现射频电源的输入阻抗和输出阻抗相匹配。A semiconductor device usually uses a radio frequency power source as a plasma excitation source. In order to transfer the power of the radio frequency power source as completely as possible into the reaction chamber of the semiconductor device, an impedance matching device is required to be connected between the RF power source and the reaction chamber to implement the RF power source. The input impedance matches the output impedance.
图1为典型的半导体设备的结构示意图。请参阅图1，所述半导体设备包括阻抗匹配器10、电流分配器和反应腔室100，在反应腔室100的顶壁上方设置有对应于反应腔室100内的中心区域的内线圈12和对应于反应腔室100内的边缘区域的外线圈13。阻抗匹配器10的输入端与射频电源11电连接，输出端与电流分配器相连，用于实现射频电源11的输入阻抗和输出阻抗的匹配。电流分配器分别与内线圈12和外线圈13电连接。具体地，如图1所示，电流分配器包括电流分配电路，该电流分配电路包括第一电感L1、第一可调电容C1、第一阻抗R1和第二阻抗R2，其中：第一电感L1和第一可调电容C1并联后，再依次串联内线圈12和第一阻抗R1，形成第一支路；外线圈13和第二阻抗R2串联，形成第二支路。第一支路和第二支路并联在阻抗匹配器10的输出端和地之间。通过调节第一可调电容C1可以将射频电流在内线圈12和外线圈13之间进行分配，从而将射频电源11输出的功率在内线圈12和外线圈13之间进行分配，以便在反应腔室100内的中心区域和边缘区域形成均匀的等离子体分布。 FIG. 1 is a schematic structural view of a typical semiconductor device. Referring to FIG. 1, the semiconductor device includes an impedance matching device 10, a current distributor, and a reaction chamber 100. Above the top wall of the reaction chamber 100, an inner coil 12 corresponding to a central region in the reaction chamber 100 is disposed. The outer coil 13 corresponds to an edge region within the reaction chamber 100. The input of the impedance matching device 10 is electrically connected to the RF power source 11 and the output terminal is connected to the current distributor for matching the input impedance and the output impedance of the RF power source 11. The current distributors are electrically connected to the inner coil 12 and the outer coil 13, respectively. Specifically, as shown in FIG. 1 , the current divider includes a current distribution circuit including a first inductor L1, a first adjustable capacitor C1, a first impedance R1, and a second impedance R2, wherein: the first inductor L1 After being connected in parallel with the first adjustable capacitor C1, the inner coil 12 and the first impedance R1 are sequentially connected in series to form a first branch; the outer coil 13 and the second impedance R2 are connected in series to form a second branch. The first leg and the second leg are connected in parallel between the output of the impedance matcher 10 and ground. The RF current can be distributed between the inner coil 12 and the outer coil 13 by adjusting the first adjustable capacitor C1, so that the power output from the radio frequency power source 11 is distributed between the inner coil 12 and the outer coil 13 so as to be in the reaction chamber. The central and edge regions within chamber 100 form a uniform plasma distribution.
图2为图1中电流分配电路的另一种电路图。请参阅图2，电流分配电路包括第二电感L2、第三阻抗R3、第三电感L3、第二可调电容C2和第四阻抗R4。其中，第二电感L2、内线圈12和第三阻抗R3依次串联，形成第一支路；第三电感L3和第二可调电容C2并联后再依次与外线圈13、第四阻抗R4串联，形成第二支路。第一支路和第二支路并联在阻抗匹配器10的输出端和地之间。在此情况下，通过调节第二可调电容C2可以将射频电源11输出的功率在内线圈12和外线圈13之间进行分配调节。2 is another circuit diagram of the current distribution circuit of FIG. 1. Referring to FIG. 2, the current distribution circuit includes a second inductor L2, a third impedance R3, a third inductor L3, a second adjustable capacitor C2, and a fourth impedance R4. The second inductor L2, the inner coil 12 and the third impedance R3 are sequentially connected in series to form a first branch; the third inductor L3 and the second adjustable capacitor C2 are connected in parallel, and then sequentially connected in series with the outer coil 13 and the fourth impedance R4. Form a second branch. The first leg and the second leg are connected in parallel between the output of the impedance matcher 10 and ground. In this case, the power output from the radio frequency power source 11 can be distributed and adjusted between the inner coil 12 and the outer coil 13 by adjusting the second adjustable capacitor C2.
由图1和图2可以直接看出：图1中的电流分配电路由4个电子器件(即，第一电感L1、第一可调电容C1、第一阻抗R1和第二阻抗R2)组成；图2中的电流分配电路由5个电子器件(即，第二电感L2、第三阻抗R3、第三电感L3、第二可调电容C2和第四阻抗R4)组成。电子器件的数量较多，导致用于实现阻抗匹配和功率分配功能的电路结构比较分散，集成度低，且成本较高。It can be directly seen from FIG. 1 and FIG. 2 that the current distribution circuit in FIG. 1 is composed of four electronic devices (ie, a first inductor L1, a first adjustable capacitor C1, a first impedance R1, and a second impedance R2); The current distribution circuit of FIG. 2 is composed of five electronic devices (ie, a second inductor L2, a third impedance R3, a third inductor L3, a second tunable capacitor C2, and a fourth impedance R4). The number of electronic devices is large, resulting in a relatively decentralized circuit structure for achieving impedance matching and power distribution functions, low integration, and high cost.
发明内容Summary of the invention
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种用于实现阻抗匹配和功率分配的装置及半导体加工设备。The present invention is directed to at least one of the technical problems existing in the prior art, and an apparatus and a semiconductor processing apparatus for achieving impedance matching and power distribution are proposed.
为解决上述问题之一，本发明提供了一种用于实现阻抗匹配和功率分配的装置，其包括功率分配电路和阻抗匹配电路，所述阻抗匹配电路的输入端用于与射频电源电连接，所述功率分配电路包括至少两条支路，每条所述支路包括上游端和下游端，每条所述支路的上游端与所述阻抗匹配电路的输出端相连，且其下游端用于与外接器件相连，每条所述支路上均串联有功率分配单元，所述功率分配单元仅包括一个第一可调电容。In order to solve the above problems, the present invention provides an apparatus for implementing impedance matching and power distribution, comprising a power distribution circuit and an impedance matching circuit, wherein an input end of the impedance matching circuit is electrically connected to a radio frequency power source, The power distribution circuit includes at least two branches, each of the branches including an upstream end and a downstream end, and an upstream end of each of the branches is connected to an output end of the impedance matching circuit, and a downstream end thereof is used Connected to the external device, each of the branches is connected in series with a power distribution unit, and the power distribution unit includes only one first adjustable capacitance.
其中，所述装置还包括输入端口和与所述支路一一对应的输出端口 组，所述阻抗匹配电路通过所述输入端口与所述射频电源相连，每个所述输出端口组均包括第一输出端口和第二输出端口，所述第一输出端口分别与相对应的支路的下游端以及该支路所对应的外接器件的一端电连接，所述第二输出端口分别与电平地以及外接器件的另一端电连接。Wherein, the device further includes an input port and an output port corresponding to the branch one-to-one The impedance matching circuit is connected to the RF power source through the input port, and each of the output port groups includes a first output port and a second output port, and the first output port and the corresponding branch respectively The downstream end of the path and one end of the external device corresponding to the branch are electrically connected, and the second output port is electrically connected to the level ground and the other end of the external device, respectively.
其中，所述至少两条支路所对应的外接器件依次套置，并且至少是在位于最边缘的所述外接器件所对应的所述输出端口组的第二输出端口与所述电平地之间串联有第一固定电容。Wherein the external devices corresponding to the at least two branches are sequentially disposed, and at least between the second output port of the output port group corresponding to the external device located at the edge and the level ground There is a first fixed capacitor in series.
其中，除了与位于中心的所述外接器件所对应的所述输出端口组之外，在其余每个所述输出端口组的第二输出端口与所述电平地之间均串联有第一固定电容。Wherein, in addition to the output port group corresponding to the external device located at the center, a first fixed capacitor is connected in series between the second output port of each of the other output port groups and the level ground .
其中，所述阻抗匹配电路包括：第二可调电容，其串联在所述阻抗匹配电路的输入端和输出端之间；第三可调电容，其一端与所述阻抗匹配电路的输入端相连，另一端接电平地。The impedance matching circuit includes: a second adjustable capacitor connected in series between the input end and the output end of the impedance matching circuit; and a third adjustable capacitor, one end of which is connected to the input end of the impedance matching circuit The other end is connected to the ground level.
其中，所述阻抗匹配电路还包括第一电感，所述第一电感与所述第二可调电容彼此串联并连接在所述阻抗匹配电路的输入端和输出端之间。The impedance matching circuit further includes a first inductor, and the first inductor and the second adjustable capacitor are connected in series with each other and connected between an input end and an output end of the impedance matching circuit.
其中，所述阻抗匹配电路还包括：第二固定电容，其并联设置在所述第二可调电容的两端或并联设置在所述第三可调电容的两端。The impedance matching circuit further includes: a second fixed capacitor disposed in parallel at both ends of the second adjustable capacitor or in parallel at both ends of the third adjustable capacitor.
其中，用于实现阻抗匹配和功率分配的装置还包括第一检测器、第二检测器、控制器和执行机构。所述第一检测器用于检测每条所述支路的电流，并将检测结果发送至所述控制器；所述第二检测器与所述输入端口、所述阻抗匹配电路的输入端和所述控制器分别相连，用于检测所述射频电源的负载阻抗，并将检测结果发送至所述控制器；所述控制器与所述执行机构相连，用于根据所述第一检测器检测到的电流和所述第二检测器检测到的负载阻抗向所述执行机构发送调节信号；所述执行机构用于根据所述调节信号调节每个所述第一可调电容和所述阻抗匹配 电路中的阻抗可调元件。Wherein, the means for achieving impedance matching and power distribution further includes a first detector, a second detector, a controller and an actuator. The first detector is configured to detect a current of each of the branches and send a detection result to the controller; the second detector and the input port, an input end of the impedance matching circuit, and a The controllers are respectively connected to detect a load impedance of the RF power source, and send the detection result to the controller; the controller is connected to the executing mechanism, and configured to detect according to the first detector The current and the load impedance detected by the second detector send an adjustment signal to the actuator; the actuator is configured to adjust each of the first adjustable capacitance and the impedance match according to the adjustment signal Impedance tunable components in the circuit.
其中，所述第一检测器包括与所述支路一一对应的电流传感器，所述电流传感器串联在相应的所述支路上。Wherein, the first detector comprises a current sensor corresponding to the branch one-to-one, and the current sensor is connected in series on the corresponding branch road.
作为另一个技术方案，本发明还提供一种半导体加工设备，其包括本发明上述各方案提供的用于实现阻抗匹配和功率分配的装置。As another technical solution, the present invention also provides a semiconductor processing apparatus including the apparatus for achieving impedance matching and power distribution provided by the above various aspects of the present invention.
本发明具有以下有益效果：The invention has the following beneficial effects:
本发明提供的用于实现阻抗匹配和功率分配的装置，其每条支路上的功率分配单元仅包括一个第一可调电容，因此，当反应腔室的顶壁上部设置有两个外接器件(即，内线圈和外线圈)时，功率分配电路仅需要两个第一可调电容即可，与现有技术中需要4～5个电子器件相比，减少了电子器件的数量，提高了所述用于实现阻抗匹配和功率分配的装置的结构紧凑性和集成度，同时降低了成本。尤其是在外接器件的数量越多时，电子器件的数量减少得越明显，上述优势也就越尽显。The device for achieving impedance matching and power distribution provided by the present invention, the power distribution unit on each branch includes only one first adjustable capacitance, and therefore, two external devices are disposed on the upper portion of the top wall of the reaction chamber ( That is, when the inner coil and the outer coil are used, the power distribution circuit only needs two first adjustable capacitors, which reduces the number of electronic devices and improves the number of electronic devices compared with 4 to 5 electronic devices in the prior art. The compactness and integration of the means for achieving impedance matching and power distribution while reducing costs. Especially when the number of external devices is increased, the number of electronic devices is reduced more and more, and the above advantages are more obvious.
本发明提供的半导体加工设备，其采用本发明提供的用于实现阻抗匹配和功率分配的装置，不仅可以降低成本，而且可以提高设备的集成度，减小设备的体积。The semiconductor processing device provided by the invention adopts the device for realizing impedance matching and power distribution provided by the invention, which not only can reduce the cost, but also can improve the integration degree of the device and reduce the volume of the device.
附图说明DRAWINGS
图1为典型的半导体设备的结构示意图；1 is a schematic structural view of a typical semiconductor device;
图2为图1中电流分配电路的另一种电路示意图；2 is another circuit diagram of the current distribution circuit of FIG. 1;
图3为本发明实施例提供的第一种用于实现阻抗匹配和功率分配的装置应用于反应腔室时的结构示意图；3 is a schematic structural diagram of a device for implementing impedance matching and power distribution applied to a reaction chamber according to an embodiment of the present invention;
图4为本发明实施例提供的用于实现阻抗匹配和功率分配的装置的工作流程图；4 is a flowchart of an operation of an apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention;
图5为本发明实施例提供的第二种用于实现阻抗匹配和功率分配的装置的结构示意图； FIG. 5 is a schematic structural diagram of a second apparatus for implementing impedance matching and power allocation according to an embodiment of the present disclosure;
图6为本发明实施例提供的第三种用于实现阻抗匹配和功率分配的装置的结构示意图；以及6 is a schematic structural diagram of a third apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention;
图7为本发明实施例提供的第四种用于实现阻抗匹配和功率分配的装置的结构示意图。FIG. 7 is a schematic structural diagram of a fourth apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention.
其中，附图标记为：Wherein, the reference numerals are:
10：阻抗匹配器；11：现有技术中的射频电源；12：现有技术中的内线圈；13：现有技术中的外线圈；100：现有技术中的反应腔室；C1：现有技术中的第一可调电容；L1：第一电感；L2：第二电感；L3：第三电感；R1：第一阻抗；R2：第二阻抗；R3：第三阻抗；R4：第四阻抗；RF、37：本发明的射频电源；20：输入端口；21、22：输出端口组；211、221：第一输出端口；212、222：第二输出端口；23：功率分配电路；231、231’：支路；24：阻抗匹配电路；25：电流传感器；26：第二检测器；27：控制器；28：执行机构；30：本发明的反应腔室；31：介质窗；32：气体喷嘴；33：下电极基座；34：本发明的内线圈；35：本发明的外线圈；C11、C11’：第一可调电容；C12：第二可调电容；C13：第三可调电容；C21：第一固定电容；C22：第二固定电容；S：基片。10: impedance matching device; 11: RF power supply in the prior art; 12: inner coil in the prior art; 13: outer coil in the prior art; 100: reaction chamber in the prior art; C1: now There is a first adjustable capacitor in the technology; L1: first inductance; L2: second inductance; L3: third inductance; R1: first impedance; R2: second impedance; R3: third impedance; R4: fourth Impedance; RF, 37: RF power supply of the present invention; 20: input port; 21, 22: output port group; 211, 221: first output port; 212, 222: second output port; 23: power distribution circuit; 231': branch circuit; 24: impedance matching circuit; 25: current sensor; 26: second detector; 27: controller; 28: actuator; 30: reaction chamber of the invention; 31: dielectric window; : gas nozzle; 33: lower electrode base; 34: inner coil of the invention; 35: outer coil of the invention; C11, C11': first adjustable capacitance; C12: second adjustable capacitance; C13: third Adjustable capacitor; C21: first fixed capacitor; C22: second fixed capacitor; S: substrate.
具体实施方式detailed description
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的用于实现阻抗匹配和功率分配的装置及半导体加工设备进行详细描述。In order to enable those skilled in the art to better understand the technical solutions of the present invention, the apparatus and semiconductor processing apparatus for implementing impedance matching and power distribution provided by the present invention are described in detail below with reference to the accompanying drawings.
图3为本发明实施例提供的第一种用于实现阻抗匹配和功率分配的装置应用于反应腔室时的结构示意图。请参阅图3，反应腔室30包括介质窗31和气体喷嘴32，气体喷嘴32自反应腔室30的外部穿过介质窗31而延伸至反应腔室30内，用于向反应腔室30内输送工艺气体； 反应腔室30内的底部区域设置有用于承载基片S的下电极基座33，下电极基座33通过匹配器36与射频电源37电连接，射频电源37用于向基片S提供负偏压；介质窗31的上方设置有对应于反应腔室30内的中心区域的内线圈34和对应于反应腔室30内的边缘区域的外线圈35。FIG. 3 is a schematic structural diagram of a device for implementing impedance matching and power distribution applied to a reaction chamber according to an embodiment of the present invention. Referring to FIG. 3, the reaction chamber 30 includes a dielectric window 31 and a gas nozzle 32 extending from the outside of the reaction chamber 30 through the dielectric window 31 into the reaction chamber 30 for use in the reaction chamber 30. Transporting process gases; The bottom region in the reaction chamber 30 is provided with a lower electrode base 33 for carrying the substrate S. The lower electrode base 33 is electrically connected to the RF power source 37 through a matching unit 36, and the RF power source 37 is used to provide a negative bias to the substrate S. The upper portion of the dielectric window 31 is provided with an inner coil 34 corresponding to a central region in the reaction chamber 30 and an outer coil 35 corresponding to an edge region in the reaction chamber 30.
本发明实施例提供的用于实现阻抗匹配和功率分配的装置设置在射频电源RF和内线圈34、外线圈35之间，用以实现射频电源RF的输入阻抗和输出阻抗的匹配以及射频电源RF输出的射频功率在内线圈34和外线圈35之间的分配，以使射频功率经由该内线圈34和外线圈35分别耦合至反应腔室30内的中心区域和边缘区域，从而将中心区域和边缘区域内的工艺气体激发形成等离子体，借助等离子体与基片S表面发生物理和/或化学反应，以对基片S进行刻蚀、沉积或者其他工艺操作。The device for implementing impedance matching and power distribution provided by the embodiment of the present invention is disposed between the RF power source RF and the inner coil 34 and the outer coil 35 for matching the input impedance and the output impedance of the RF power source RF and the RF power source RF. The output RF power is distributed between the inner coil 34 and the outer coil 35 such that radio frequency power is coupled to the central and edge regions within the reaction chamber 30 via the inner coil 34 and the outer coil 35, respectively, thereby centering the central region and The process gas in the edge region is excited to form a plasma, which is physically and/or chemically reacted with the surface of the substrate S by means of plasma to etch, deposit or otherwise process the substrate S.
在本实施例中，用于实现阻抗匹配和功率分配的装置包括功率分配电路23、阻抗匹配电路24、第一检测器、第二检测器26、控制器27和执行机构28。In the present embodiment, the means for achieving impedance matching and power distribution includes a power distribution circuit 23, an impedance matching circuit 24, a first detector, a second detector 26, a controller 27, and an actuator 28.
其中，阻抗匹配电路24的输入端用于与射频电源RF电连接，射频电源RF的频率可以为400kHz、2MHz、13MHz、27MHz、4MHz、60MHz中的任意一种。功率分配电路23包括至少两条支路(231和231’)，其中，支路(231，231’)的上游端与阻抗匹配电路24的输出端相连，支路(231，231’)的下游端用于与外接器件相连。所谓支路(231，231’)的上游端，指的是支路(231，231’)中的与阻抗匹配电路24相连的那一端；所谓支路(231，231’)的下游端，指的是支路(231，231’)中的与外接器件相连的那一端。即所谓上下游，是沿电路中功率的传输方向而言的。在本实施例中，外接器件包括内线圈34和外线圈35，这时，支路231与内线圈34相连，支路231’与外线圈35相连。其中，内线圈34或外线圈35的结构包括但不限于平面线 圈结构、立体线圈结构或部分平面部分立体的线圈结构。The input end of the impedance matching circuit 24 is electrically connected to the RF power source RF. The frequency of the RF power source RF may be any one of 400 kHz, 2 MHz, 13 MHz, 27 MHz, 4 MHz, and 60 MHz. The power distribution circuit 23 includes at least two branches (231 and 231'), wherein the upstream end of the branch (231, 231') is connected to the output of the impedance matching circuit 24, downstream of the branch (231, 231') The terminal is used to connect to an external device. The upstream end of the so-called branch (231, 231') refers to the end of the branch (231, 231') that is connected to the impedance matching circuit 24; the downstream end of the so-called branch (231, 231') refers to It is the end of the branch (231, 231') that is connected to the external device. The so-called upstream and downstream, is in the direction of power transmission in the circuit. In the present embodiment, the external device includes an inner coil 34 and an outer coil 35. At this time, the branch 231 is connected to the inner coil 34, and the branch 231' is connected to the outer coil 35. Wherein, the structure of the inner coil 34 or the outer coil 35 includes but is not limited to a plane line A coil structure of a ring structure, a three-dimensional coil structure or a partial planar portion.
另外，每条支路(231，231’)上均串联有功率分配单元，该功率分配单元仅包括一个第一可调电容(C11，C11’)。即，支路231上串联有第一可调电容C11，支路231’上串联有第一可调电容C11’。In addition, a power distribution unit is connected in series to each branch (231, 231'), and the power distribution unit includes only one first adjustable capacitance (C11, C11'). That is, the first adjustable capacitor C11 is connected in series to the branch 231, and the first adjustable capacitor C11' is connected in series to the branch 231'.
由上可知，本发明实施例提供的用于实现阻抗匹配和功率分配的装置，在反应腔室30的上方设置有两个外接器件(即，内线圈34和外线圈35)的情况下，功率分配电路23对应地仅需要两个电子器件(即，仅需两个第一可调电容(C11和C11’)，其中第一可调电容C11对应于内线圈34，第一可调电容C11’对应于外线圈35)即可，这与现有技术中需要4～5个电子器件相比，减少了电子器件的数量，提高了所述用于实现阻抗匹配和功率分配的装置的结构紧凑性和集成度，同时降低了成本。尤其是在外接器件的数量越多时，电子器件的数量减少得越明显，上述优势也就越尽显。It can be seen from the above that the apparatus for implementing impedance matching and power distribution provided by the embodiment of the present invention has two external devices (ie, the inner coil 34 and the outer coil 35) disposed above the reaction chamber 30, and the power is The distribution circuit 23 correspondingly requires only two electronic devices (ie, only two first adjustable capacitors (C11 and C11') are required, wherein the first adjustable capacitor C11 corresponds to the inner coil 34, and the first adjustable capacitor C11' Corresponding to the outer coil 35), which reduces the number of electronic devices compared to the prior art requiring 4 to 5 electronic devices, and improves the compactness of the device for achieving impedance matching and power distribution. And integration, while reducing costs. Especially when the number of external devices is increased, the number of electronic devices is reduced more and more, and the above advantages are more obvious.
如图3所示，所述用于实现阻抗匹配和功率分配的装置还包括输入端口20和与支路(231，231’)一一对应的输出端口组(21，22)。在本实施例中，阻抗匹配电路24的输入端通过输入端口20与射频电源RF相连。功率分配电路23包括两条支路(231和231’)，相应地，所述装置包括对应于支路231的输出端口组21和对应于支路231’的输出端口组22。其中，输出端口组21包括第一输出端口211和第二输出端口212，第一输出端口211分别与支路231的下游端以及该支路231所对应的外接器件(即，内线圈34)的一端电连接，第二输出端口212分别与电平地以及外接器件(即，内线圈34)的另一端电连接；输出端口组22包括第一输出端口221和第二输出端口222，第一输出端口221分别与支路231’的下游端以及该支路231’所对应的外接器件(即，外线圈35)的一端电连接，第二输出端口222与外接器件(即，外线圈35)的另一端电连接，以及经由第一固定电容C21与电平地电 连接。上述输入端口20、输出端口组21的第一输出端口211和第二输出端口212、输出端口组22的第一输出端口221和第二输出端口222均可以设置为插拔式的端口，因此，将输出端口组21与内线圈34电连接、将输出端口组22与外线圈35电连接、以及将输入端口20与射频电源电连接或断开时，均可以采用插拔的方式进行，以便于结构整体的安装和维护。As shown in Figure 3, the means for effecting impedance matching and power distribution further includes an input port 20 and an output port group (21, 22) that correspond one-to-one with the branches (231, 231'). In the present embodiment, the input of the impedance matching circuit 24 is coupled to the RF power source RF via the input port 20. The power distribution circuit 23 includes two branches (231 and 231'), and accordingly, the device includes an output port group 21 corresponding to the branch 231 and an output port group 22 corresponding to the branch 231'. The output port group 21 includes a first output port 211 and a second output port 212. The first output port 211 is respectively connected to the downstream end of the branch 231 and the external device corresponding to the branch 231 (ie, the inner coil 34). One end is electrically connected, and the second output port 212 is electrically connected to the level ground and the other end of the external device (ie, the inner coil 34); the output port group 22 includes a first output port 221 and a second output port 222, and the first output port 221 is electrically connected to a downstream end of the branch 231' and an external device (ie, the outer coil 35) corresponding to the branch 231', and the second output port 222 is connected to the external device (ie, the outer coil 35). One end is electrically connected, and is electrically connected to the level via the first fixed capacitor C21 connection. The input port 20, the first output port 211 and the second output port 212 of the output port group 21, and the first output port 221 and the second output port 222 of the output port group 22 may be configured as pluggable ports. When the output port group 21 is electrically connected to the inner coil 34, the output port group 22 is electrically connected to the outer coil 35, and the input port 20 is electrically connected or disconnected from the radio frequency power source, the plugging can be performed by plugging and unplugging. The overall installation and maintenance of the structure.
通过研究发现：若第二输出端口222直接接电平地，会造成外线圈35两端电压不相等，从而造成反应腔室30内的对应于外线圈35的边缘区域的等离子体分布不均匀，不利于工艺的均匀性。而在本实施例中，第二输出端口222与电平地之间还串联有第一固定电容C21，即，与外线圈35对应的支路231’上的第一可调电容C11’先串联外线圈35再串联第一固定电容C21，使得该支路231’与电平地之间形成阻抗由负到正再负的结构，从而使得外线圈35上的电流和电压均是对称分布的，进而可以实现反应腔室30内的边缘区域的等离子体的均匀分布。It is found through research that if the second output port 222 is directly connected to the ground level, the voltages across the outer coil 35 are not equal, thereby causing uneven plasma distribution in the edge region of the reaction chamber 30 corresponding to the outer coil 35. Conducive to the uniformity of the process. In this embodiment, the first fixed capacitor C21 is further connected in series between the second output port 222 and the level ground, that is, the first adjustable capacitor C11' on the branch 231' corresponding to the outer coil 35 is connected in series. The coil 35 is further connected in series with the first fixed capacitor C21, so that a structure in which the impedance is negative to positive and negative again is formed between the branch 231' and the level ground, so that the current and the voltage on the outer coil 35 are symmetrically distributed, and thus A uniform distribution of the plasma in the edge regions within the reaction chamber 30 is achieved.
另外，在本发明实施例提供的用于实现阻抗匹配和功率分配的装置中，电容串联电感(即，第一可调电容C11串联内线圈34后接电平地)的结构很容易达到串联谐振的效果，而在这种谐振效果下相应支路231上的电流最大，第一可调电容C11和内线圈34连接点的电势最高。由于电势越高起辉越好，且内线圈34与气体喷嘴32位置接近，因而扩大了等离子体的起辉窗口，从而增大了反应腔室30的应用窗口。In addition, in the apparatus for implementing impedance matching and power distribution provided by the embodiments of the present invention, the structure of the capacitor series inductance (ie, the first adjustable capacitor C11 is connected to the inner coil 34 in series) is easy to achieve series resonance. The effect is that, under this resonance effect, the current on the corresponding branch 231 is the largest, and the potential of the connection point of the first adjustable capacitor C11 and the inner coil 34 is the highest. The higher the potential, the better the priming, and the inner coil 34 is in close proximity to the gas nozzle 32, thereby expanding the priming window of the plasma, thereby increasing the application window of the reaction chamber 30.
阻抗匹配电路24包括第二可调电容C12、第三可调电容C13和第一电感L1。第二可调电容C12与第一电感L1彼此串联并连接在阻抗匹配电路24的输入端和输出端之间；第三可调电容C13的一端与阻抗匹配电路24的输入端相连，另一端接电平地。The impedance matching circuit 24 includes a second adjustable capacitor C12, a third adjustable capacitor C13, and a first inductor L1. The second adjustable capacitor C12 and the first inductor L1 are connected in series with each other and connected between the input end and the output end of the impedance matching circuit 24; one end of the third adjustable capacitor C13 is connected to the input end of the impedance matching circuit 24, and the other end is connected Level ground.
第一检测器包括两个电流传感器25。支路231和支路231’上各自均设置有一个电流传感器25，用于分别检测所在支路(231或231’) 的电流，并将检测到的结果发送至控制器27。The first detector comprises two current sensors 25. Each of the branch 231 and the branch 231' is provided with a current sensor 25 for detecting the branch (231 or 231'), respectively. The current is sent to the controller 27 and the detected result.
第二检测器26与输入端口20、阻抗匹配电路24的输入端和控制器27分别相连，用于检测射频电源RF的负载阻抗，并将检测到的负载阻抗发送至控制器27。The second detector 26 is connected to the input port 20, the input of the impedance matching circuit 24, and the controller 27, respectively, for detecting the load impedance of the RF power source RF, and transmitting the detected load impedance to the controller 27.
控制器27与执行机构28相连，用于根据所述第一检测器检测到的电流和第二检测器26检测到的负载阻抗向执行机构28发送调节信号；执行机构28用于根据所述调节信号调节每个第一可调电容(C11，C11’)和阻抗匹配电路24中的阻抗可调元件，所谓阻抗可调元件是指通过调节能够改变阻抗匹配电路24的阻抗大小的元件，在本实施例中，所述阻抗可调元件包括第二可调电容C12和第三可调电容C13。执行机构28用于根据所述调节信号调节第一可调电容(C11，C11’)、第二可调电容C12和第三可调电容C13，即，调节第一可调电容(C11，C11’)、第二可调电容C12和第三可调电容C13的活动端的位置，以改变各自串联在电路中的阻抗值。具体地，执行机构28包括步进电机。The controller 27 is coupled to the actuator 28 for transmitting an adjustment signal to the actuator 28 based on the current detected by the first detector and the load impedance detected by the second detector 26; the actuator 28 is operative to adjust The signal adjusts each of the first tunable capacitors (C11, C11') and the impedance tunable element in the impedance matching circuit 24, and the so-called impedance tunable element refers to an element capable of changing the impedance of the impedance matching circuit 24 by adjusting In an embodiment, the impedance tunable component comprises a second tunable capacitor C12 and a third tunable capacitor C13. The actuator 28 is configured to adjust the first adjustable capacitor (C11, C11'), the second adjustable capacitor C12, and the third adjustable capacitor C13 according to the adjustment signal, that is, adjust the first adjustable capacitor (C11, C11' The position of the active ends of the second tunable capacitor C12 and the third tunable capacitor C13 to change the impedance values of the respective series connected in the circuit. Specifically, the actuator 28 includes a stepper motor.
需要说明的是，现有技术中，通常借助两个控制器来分别控制阻抗匹配电路24进行阻抗匹配和功率分配电路23进行功率分配，而在本实施例中，使用同一个控制器27来控制阻抗负载匹配电路24和功率分配电路23，这与现有技术相比，可以更进一步降低成本并提高集成度。It should be noted that, in the prior art, the impedance matching circuit 24 is separately controlled by the two controllers to perform impedance matching and the power distribution circuit 23 performs power allocation. In the present embodiment, the same controller 27 is used to control. The impedance load matching circuit 24 and the power distribution circuit 23 can further reduce the cost and improve the integration as compared with the prior art.
下面结合图4详细说明本实施例提供的用于实现阻抗匹配和功率分配的装置的工作过程，其具体包括以下步骤：The working process of the apparatus for implementing impedance matching and power allocation provided by this embodiment is described in detail below with reference to FIG. 4, which specifically includes the following steps:
步骤S1，第二检测器26、控制器27、执行机构28和阻抗匹配电路24配合以进行阻抗匹配。具体地，控制器27根据第二检测器26检测到的负载阻抗计算第二可调电容C12和第三可调电容C13各自需要调节的调节量，并发送相应的调节信号至执行机构28，执行机构28根据该调节信号调节第二可调电容C12和第三可调电容C13的活动端的位置。 In step S1, the second detector 26, the controller 27, the actuator 28 and the impedance matching circuit 24 cooperate to perform impedance matching. Specifically, the controller 27 calculates an adjustment amount that each of the second tunable capacitor C12 and the third tunable capacitor C13 needs to be adjusted according to the load impedance detected by the second detector 26, and sends a corresponding adjustment signal to the actuator 28 to execute The mechanism 28 adjusts the positions of the movable ends of the second tunable capacitor C12 and the third tunable capacitor C13 according to the adjustment signal.
步骤S2，控制器27实时根据第二检测器26检测到的负载阻抗判断当前是否实现阻抗匹配，若是，则进入步骤S3；若否，则返回步骤S1。In step S2, the controller 27 determines whether the impedance matching is currently implemented according to the load impedance detected by the second detector 26, and if yes, proceeds to step S3; if not, returns to step S1.
步骤S3，第一检测器、控制器27、执行机构28和功率分配电路23配合开始进行功率分配。具体地，第一检测器检测每条支路(231，231’)的电流，并将检测结果发送至控制器27，控制器27基于每条支路(231，231’)的电流计算每条支路(231，231’)的功率，并基于该功率值计算每个第一可调电容(C11，C11’)需要调节的调节量，并发送相应的调节信号至执行机构28，执行机构28根据该调节信号调节每个第一可调电容(C11，C11’)的活动端的位置。In step S3, the first detector, the controller 27, the actuator 28 and the power distribution circuit 23 cooperate to start power distribution. Specifically, the first detector detects the current of each branch (231, 231') and sends the detection result to the controller 27, which calculates each of the currents based on the current of each branch (231, 231'). The power of the branch (231, 231'), and based on the power value, calculates an adjustment amount that each of the first tunable capacitors (C11, C11') needs to adjust, and transmits a corresponding adjustment signal to the actuator 28, the actuator 28 The position of the active end of each of the first tunable capacitors (C11, C11') is adjusted in accordance with the adjustment signal.
步骤S4，控制器27根据每条支路(231，231’)上的功率实时判断当前是否达到要求的功率分配比例，若是，则进入步骤S5；若否，则返回步骤S3。In step S4, the controller 27 determines in real time whether the required power allocation ratio has been reached based on the power on each of the branches (231, 231'), and if so, proceeds to step S5; if not, returns to step S3.
步骤S5，控制器27根据第二检测器26检测到的负载阻抗判断当前是否实现阻抗匹配；若是，则进入步骤S6；若否，则返回步骤S1。In step S5, the controller 27 determines whether impedance matching is currently achieved based on the load impedance detected by the second detector 26; if yes, the process proceeds to step S6; if not, returns to step S1.
步骤S6，控制器27判断工艺是否完成，若是，工艺结束；若否，进入步骤S5。In step S6, the controller 27 determines whether the process is completed, and if so, the process ends; if not, proceeds to step S5.
在步骤S4中，可以根据流过两条支路(231，231’)的电流比例(即，流过外线圈35和内线圈34的电流比例)是否达到要求的电流分配比例，判断两条支路(231，231’)上的功率是否达到要求的功率分配比例。不同工艺中所要求的流过外线圈35和内线圈34的电流比例也有所不同，如某工艺A要求的流过外线圈35的电流与流过内线圈34的电流之比为1∶3，工艺B要求的流过外线圈35的电流与流过内线圈34的电流之比为1∶1，工艺C要求的流过外线圈35的电流与流过内线圈34的电流之比为3∶1，等等，这个比例可以根据具体工艺要求而被限定在一定范围内(例如，流过外线圈35的电流与流过内线圈34的电流 之比为1∶9到9∶1的范围)的任意比例值。通过改变流过内线圈34的电流和流过外线圈35的电流，形成均匀的电磁场分布，进而形成均匀的等离子体分布，从而使得工艺完成后基片S的均匀性满足要求。In step S4, two branches can be determined according to whether the current ratio flowing through the two branches (231, 231') (i.e., the ratio of the current flowing through the outer coil 35 and the inner coil 34) reaches the required current distribution ratio. Whether the power on the road (231, 231') reaches the required power distribution ratio. The ratio of the current flowing through the outer coil 35 and the inner coil 34 required in different processes is also different. For example, the ratio of the current flowing through the outer coil 35 required by a process A to the current flowing through the inner coil 34 is 1:3. The ratio of the current flowing through the outer coil 35 required by the process B to the current flowing through the inner coil 34 is 1:1, and the ratio of the current flowing through the outer coil 35 required by the process C to the current flowing through the inner coil 34 is 3: 1, etc., this ratio can be limited to a certain range according to specific process requirements (for example, the current flowing through the outer coil 35 and the current flowing through the inner coil 34) Any ratio of the ratio is in the range of 1:9 to 9:1. By changing the current flowing through the inner coil 34 and the current flowing through the outer coil 35, a uniform electromagnetic field distribution is formed, thereby forming a uniform plasma distribution, so that the uniformity of the substrate S after the completion of the process satisfies the requirements.
需要说明的是，尽管在本实施例中阻抗匹配电路24采用图3所示的电路结构，但是，本发明并不局限于此，在实际应用中，阻抗匹配电路24还可以采用其他电路结构，举例如下：It should be noted that although the impedance matching circuit 24 adopts the circuit structure shown in FIG. 3 in this embodiment, the present invention is not limited thereto. In practical applications, the impedance matching circuit 24 may also adopt other circuit structures. Examples are as follows:
请参阅图5，其中示出了本发明实施例提供的第二种用于实现阻抗匹配和功率分配的装置的结构示意图。与图3所示的阻抗匹配电路24相比，图5中的阻抗匹配电路24省去了图3中的第一电感L1，其同样可以实现阻抗匹配，而且电子器件更少，因此，本实施例提供的用于实现阻抗匹配和功率分配的装置的体积会进一步减小，成本会进一步降低。Referring to FIG. 5, a schematic structural diagram of a second apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention is shown. Compared with the impedance matching circuit 24 shown in FIG. 3, the impedance matching circuit 24 of FIG. 5 omits the first inductance L1 of FIG. 3, which can also achieve impedance matching, and has fewer electronic devices. Therefore, the present embodiment The volume of the device provided for achieving impedance matching and power distribution is further reduced and the cost is further reduced.
请参阅图6，其中示出了本发明实施例提供的第三种用于实现阻抗匹配和功率分配的装置的结构示意图。与图5相比，图6中的阻抗匹配电路24还包括第二固定电容C22，第二固定电容C22并联设置在第二可调电容C12的两端，从而可以进行更高精度的阻抗匹配调整，减少了超调问题的发生，使得阻抗匹配调整过程的稳定性更好。Referring to FIG. 6, a schematic structural diagram of a third apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention is shown. Compared with FIG. 5, the impedance matching circuit 24 of FIG. 6 further includes a second fixed capacitor C22, which is disposed in parallel at both ends of the second adjustable capacitor C12, thereby enabling higher precision impedance matching adjustment. , reducing the occurrence of overshoot problems, making the stability of the impedance matching adjustment process better.
请参阅图7，其中示出了本发明实施例提供的第四种用于实现阻抗匹配和功率分配的装置的结构示意图。与图5相比，图7中的阻抗匹配电路24还包括第二固定电容C22，第二固定电容C22并联设置在第三可调电容C13的两端，从而可以减小对第二可调电容C12的电流限制，实现了该装置的高功率应用。Referring to FIG. 7, a schematic structural diagram of a fourth apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention is shown. Compared with FIG. 5, the impedance matching circuit 24 of FIG. 7 further includes a second fixed capacitor C22, and the second fixed capacitor C22 is disposed in parallel at both ends of the third adjustable capacitor C13, so that the second adjustable capacitor can be reduced. The current limit of the C12 enables high power applications of the device.
另外需要说明的是，本发明实施例提供的用于实现阻抗匹配和功率分配的装置，并不局限于应用两个外接器件的情况，也可以用于至少三个外接器件的情况，具体电路设计原理与应用两个外接器件时的设计原理相类似，在此不再详述；并且，外接器件并不局限于线圈的这种情况， 还可以为其他能够采用的器件。In addition, it should be noted that the apparatus for implementing impedance matching and power allocation provided by the embodiments of the present invention is not limited to the case of applying two external devices, and may also be used for the case of at least three external devices, and the specific circuit design. The principle is similar to the design principle when applying two external devices, and will not be described in detail here; and, the external device is not limited to the case of the coil, It can also be other devices that can be used.
进一步需要说明的是，当至少三个外接器件依次套置时，至少三个外接器件分别对应于反应腔室30的沿径向划分的一个中心区域和至少两个环形区域，每个外接器件均用以激发相应区域内的气体形成等离子体。与上文的工作原理相同，为了提高反应腔室30内的等离子体的均匀性，至少在位于最边缘的所述外接器件对应的所述输出端口组的第二输出端口与电平地之间串联有第一固定电容C21；为了进一步提高反应腔室30内的等离子体分布的均匀性，除了与位于中心的所述外接器件对应的所述输出端口组，在其余每个所述输出端口组的第二输出端口与电平地之间均串联有第一固定电容C21。It should be further noted that when at least three external devices are sequentially nested, at least three external devices respectively correspond to a central region of the reaction chamber 30 that is radially divided and at least two annular regions, each of the external devices. It is used to excite gas in the corresponding region to form a plasma. In the same manner as above, in order to improve the uniformity of the plasma in the reaction chamber 30, at least the second output port of the output port group corresponding to the external device located at the extreme edge is connected in series with the level ground. There is a first fixed capacitor C21; in order to further improve the uniformity of the plasma distribution in the reaction chamber 30, in addition to the output port group corresponding to the externally located external device, in each of the remaining output port groups A first fixed capacitor C21 is connected in series between the second output port and the level ground.
作为另外一个技术方案，本实施例还提供一种半导体加工设备，其采用本发明上述实施例提供的用于实现阻抗匹配和功率分配的装置。As another technical solution, the embodiment further provides a semiconductor processing apparatus using the apparatus for implementing impedance matching and power distribution provided by the above embodiments of the present invention.
本发明实施例提供的半导体体加工设备，由于其采用了上述实施例提供的用于实现阻抗匹配和功率分配的装置，因此不仅可以降低成本，而且可以提高设备的集成度，减小设备的体积。The semiconductor body processing apparatus provided by the embodiment of the present invention can reduce the cost, and can improve the integration degree of the device and reduce the volume of the device, because it adopts the device for implementing impedance matching and power distribution provided by the above embodiments. .
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。 It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

  1. 一种用于实现阻抗匹配和功率分配的装置，包括功率分配电路和阻抗匹配电路，所述阻抗匹配电路的输入端用于与射频电源电连接，所述功率分配电路包括至少两条支路，每条所述支路包括上游端和下游端，每条所述支路的上游端与所述阻抗匹配电路的输出端相连，且其下游端用于与外接器件相连，其特征在于，每条所述支路上均串联有功率分配单元，所述功率分配单元仅包括一个第一可调电容。An apparatus for implementing impedance matching and power distribution, comprising a power distribution circuit and an impedance matching circuit, wherein an input end of the impedance matching circuit is electrically connected to a radio frequency power source, and the power distribution circuit includes at least two branches, Each of the branches includes an upstream end and a downstream end, an upstream end of each of the branches is connected to an output end of the impedance matching circuit, and a downstream end thereof is connected to an external device, characterized in that each of the branches A power distribution unit is connected in series on the branch, and the power distribution unit includes only one first adjustable capacitor.
  2. 根据权利要求1所述的用于实现阻抗匹配和功率分配的装置，其特征在于，所述装置还包括输入端口和与所述支路一一对应的输出端口组，所述阻抗匹配电路通过所述输入端口与所述射频电源相连，每个所述输出端口组均包括第一输出端口和第二输出端口，所述第一输出端口分别与相对应的支路的下游端以及该支路所对应的外接器件的一端电连接，所述第二输出端口分别与电平地以及外接器件的另一端电连接。The apparatus for implementing impedance matching and power distribution according to claim 1, wherein said apparatus further comprises an input port and an output port group corresponding to said branch one-to-one, said impedance matching circuit passing through The input port is connected to the RF power source, and each of the output port groups includes a first output port and a second output port, the first output port and the downstream end of the corresponding branch and the branch respectively One end of the corresponding external device is electrically connected, and the second output port is electrically connected to the level ground and the other end of the external device, respectively.
  3. 根据权利要求2所述的用于实现阻抗匹配和功率分配的装置，其特征在于，所述至少两条支路所对应的外接器件依次套置，并且至少是在位于最边缘的所述外接器件所对应的所述输出端口组的第二输出端口与所述电平地之间串联有第一固定电容。The apparatus for implementing impedance matching and power distribution according to claim 2, wherein the external devices corresponding to the at least two branches are sequentially placed, and at least at the outermost edge of the external device A first fixed capacitor is connected in series between the corresponding second output port of the output port group and the level ground.
  4. 根据权利要求3所述的用于实现阻抗匹配和功率分配的装置，其特征在于，除了与位于中心的所述外接器件所对应的所述输出端口组之外，在其余每个所述输出端口组的第二输出端口与所述电平地之间均串联有第一固定电容。The apparatus for implementing impedance matching and power distribution according to claim 3, wherein each of said output ports is included in addition to said output port group corresponding to said externally located external device A first fixed capacitor is connected in series between the second output port of the group and the level ground.
  5. 根据权利要求1-4中任意一项所述的用于实现阻抗匹配和功率分配 的装置，其特征在于，所述阻抗匹配电路包括：A method for achieving impedance matching and power allocation according to any one of claims 1-4 The device is characterized in that the impedance matching circuit comprises:
    第二可调电容，其串联在所述阻抗匹配电路的输入端和输出端之间；a second adjustable capacitor connected in series between the input end and the output end of the impedance matching circuit;
    第三可调电容，其一端与所述阻抗匹配电路的输入端相连，另一端接电平地。The third adjustable capacitor has one end connected to the input end of the impedance matching circuit and the other end connected to the ground level.
  6. 根据权利要求5所述的用于实现阻抗匹配和功率分配的装置，其特征在于，所述阻抗匹配电路还包括第一电感，所述第一电感与所述第二可调电容彼此串联并连接在所述阻抗匹配电路的输入端和输出端之间。The apparatus for implementing impedance matching and power distribution according to claim 5, wherein the impedance matching circuit further comprises a first inductor, and the first inductor and the second adjustable capacitor are connected in series and connected to each other Between the input and output of the impedance matching circuit.
  7. 根据权利要求5所述的用于实现阻抗匹配和功率分配的装置，其特征在于，所述阻抗匹配电路还包括：The apparatus for implementing impedance matching and power distribution according to claim 5, wherein the impedance matching circuit further comprises:
    第二固定电容，其并联设置在所述第二可调电容的两端或并联设置在所述第三可调电容的两端。a second fixed capacitor is disposed in parallel at both ends of the second adjustable capacitor or in parallel at both ends of the third adjustable capacitor.
  8. 根据权利要求2-4中任意一项所述的用于实现阻抗匹配和功率分配的装置，其特征在于，所述装置还包括第一检测器、第二检测器、控制器和执行机构，Apparatus for implementing impedance matching and power distribution according to any of claims 2-4, characterized in that the apparatus further comprises a first detector, a second detector, a controller and an actuator,
    所述第一检测器用于检测每条所述支路的电流，并将检测结果发送至所述控制器；The first detector is configured to detect a current of each of the branches, and send the detection result to the controller;
    所述第二检测器与所述输入端口、所述阻抗匹配电路的输入端和所述控制器分别相连，用于检测所述射频电源的负载阻抗，并将检测结果发送至所述控制器；The second detector is connected to the input port, the input end of the impedance matching circuit, and the controller, respectively, for detecting a load impedance of the RF power source, and transmitting the detection result to the controller;
    所述控制器与所述执行机构相连，用于根据所述第一检测器检测到的电流和所述第二检测器检测到的负载阻抗向所述执行机构发送调节信号；The controller is connected to the executing mechanism, and configured to send an adjustment signal to the executing mechanism according to a current detected by the first detector and a load impedance detected by the second detector;
    所述执行机构用于根据所述调节信号调节每个所述第一可调电容和所述阻抗匹配电路中的阻抗可调元件。 The actuator is configured to adjust each of the first tunable capacitor and the impedance tunable element in the impedance matching circuit according to the adjustment signal.
  9. 根据权利要求8所述的用于实现阻抗匹配和功率分配的装置，其特征在于，所述第一检测器包括与所述支路一一对应的电流传感器，所述电流传感器串联在相应的所述支路上。The apparatus for implementing impedance matching and power distribution according to claim 8, wherein said first detector comprises a current sensor in one-to-one correspondence with said branch, said current sensor being connected in series at a corresponding one Said on the road.
  10. 一种半导体加工设备，其特征在于，包括权利要求1-9中任意一项所述的用于实现阻抗匹配和功率分配的装置。 A semiconductor processing apparatus characterized by comprising the apparatus for achieving impedance matching and power distribution according to any one of claims 1-9.
PCT/CN2016/080366 2016-03-11 2016-04-27 Apparatus for implementing impedance matching and power distribution, and semiconductor processing device WO2017152477A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610140056.6 2016-03-11
CN201610140056.6A CN107180737B (en) 2016-03-11 2016-03-11 For realizing the device and semiconductor processing equipment of impedance matching and power distribution

Publications (1)

Publication Number Publication Date
WO2017152477A1 true WO2017152477A1 (en) 2017-09-14

Family

ID=59788920

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/080366 WO2017152477A1 (en) 2016-03-11 2016-04-27 Apparatus for implementing impedance matching and power distribution, and semiconductor processing device

Country Status (3)

Country Link
CN (1) CN107180737B (en)
TW (1) TWI603370B (en)
WO (1) WO2017152477A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113604788A (en) * 2021-07-27 2021-11-05 北京北方华创微电子装备有限公司 Base bias adjusting device and method and semiconductor process equipment

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7002268B2 (en) * 2017-09-28 2022-01-20 東京エレクトロン株式会社 Plasma processing equipment
CN110536533A (en) * 2018-06-07 2019-12-03 北京北方华创微电子装备有限公司 Upper electrode system, plasma chamber and method of generating plasma
CN109412574B (en) * 2018-10-25 2020-07-17 北京北方华创微电子装备有限公司 Power transmission method of radio frequency power supply
CN111613503B (en) * 2020-05-18 2022-09-16 北京北方华创微电子装备有限公司 Upper electrode mechanism of semiconductor process equipment and semiconductor process equipment
CN113066712A (en) * 2021-03-23 2021-07-02 北京北方华创微电子装备有限公司 Impedance matching method and semiconductor process equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259334B1 (en) * 1998-12-22 2001-07-10 Lam Research Corporation Methods for controlling an RF matching network
CN1511335A (en) * 2001-03-30 2004-07-07 ��ķ�о����޹�˾ Inductive plasma processor including current sensor for plasma excitation coil
CN101740303A (en) * 2008-11-05 2010-06-16 东京毅力科创株式会社 plasma processing apparatus
CN103107058A (en) * 2011-11-10 2013-05-15 东京毅力科创株式会社 Substrate processing apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5865937A (en) * 1995-08-21 1999-02-02 Applied Materials, Inc. Broad-band adjustable power ratio phase-inverting plasma reactor
KR101007822B1 (en) * 2003-07-14 2011-01-13 주성엔지니어링(주) Apparatus of hybrid coupled plasma
KR101151419B1 (en) * 2010-07-30 2012-06-01 주식회사 플라즈마트 Rf power disdtribution apparatus and rf power disdtribution method
CN104409309B (en) * 2014-12-01 2016-09-21 逢甲大学 Large area plasma processing means generates method with homogeneous plasma
CN105244591B (en) * 2015-11-06 2018-05-22 北京邮电大学 A kind of tunable band complex impedance mesh power distributor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259334B1 (en) * 1998-12-22 2001-07-10 Lam Research Corporation Methods for controlling an RF matching network
CN1511335A (en) * 2001-03-30 2004-07-07 ��ķ�о����޹�˾ Inductive plasma processor including current sensor for plasma excitation coil
CN101740303A (en) * 2008-11-05 2010-06-16 东京毅力科创株式会社 plasma processing apparatus
CN103107058A (en) * 2011-11-10 2013-05-15 东京毅力科创株式会社 Substrate processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113604788A (en) * 2021-07-27 2021-11-05 北京北方华创微电子装备有限公司 Base bias adjusting device and method and semiconductor process equipment

Also Published As

Publication number Publication date
CN107180737B (en) 2019-10-08
CN107180737A (en) 2017-09-19
TWI603370B (en) 2017-10-21
TW201732864A (en) 2017-09-16

Similar Documents

Publication Publication Date Title
WO2017152477A1 (en) Apparatus for implementing impedance matching and power distribution, and semiconductor processing device
JP5808012B2 (en) Plasma processing equipment
CN101043784B (en) Hybrid plasma reactor
US9663858B2 (en) Plasma processing apparatus
KR101711667B1 (en) Automatic matching unit and plasma processing apparatus
US20190035666A1 (en) Substrate processing apparatus
CN1973364A (en) Multiple frequency plasma etch reactor
US11830709B2 (en) Broadband plasma processing systems and methods
JP2010524156A (en) Method and apparatus for inducing a DC voltage on an electrode facing a wafer
KR102191228B1 (en) Plasma processing apparatus and plasma processing method
US11756767B2 (en) Plasma processing apparatus and plasma processing method
US20220108878A1 (en) Plasma processing apparatus and plasma processing method
JP2017079127A (en) Inductively coupled plasma generating apparatus, self bias applying apparatus, plasma processing apparatus, plasma generating method, and self bias applying method
CN103928283A (en) Radio frequency pulse power coupling method and apparatus for vacuum treatment cavity
JP2008270815A (en) Method of eliminating m-shape etching rate distribution in inductively-coupled plasma reactor
CN103474328B (en) The method of plasma treatment
US10964511B2 (en) Semiconductor manufacturing device and method of operating the same
CN104105329A (en) Electric power supply device and method, and substrate processing device utilizing same
JP7318114B2 (en) Tuning method for improving plasma stability
WO2018082309A1 (en) Filter circuit, heating circuit, and semiconductor processing device
TWI636484B (en) Inductively coupled plasma processor
TWM588353U (en) Inductively coupled plasma processor
KR102467966B1 (en) Hybrid plasma generator and control method of hybrid plasma generator
US20230187184A1 (en) Plasma processing apparatus and potential control method
CN114792619A (en) Semiconductor process chamber

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16893125

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 16893125

Country of ref document: EP

Kind code of ref document: A1