TWI603370B - Device for realizing impedance matching and power distribution and semiconductor processing device - Google Patents

Description

Device and semiconductor processing device for achieving impedance matching and power distribution

The invention belongs to the technical field of microelectronic processing, and in particular relates to a device and a semiconductor processing device for implementing impedance matching and power distribution.

The semiconductor device usually uses a radio frequency power source as a plasma excitation source. In order to transfer the power of the radio frequency power source to the reaction chamber of the semiconductor device as completely as possible, an impedance matching device needs to be connected in series between the RF power source and the reaction chamber to implement the RF power source. The input impedance matches the output impedance.

Figure 1 is a schematic view showing the structure of a typical semiconductor device. Referring to FIG. 1, the semiconductor device includes an impedance matching device 10, a current distributor, and a reaction chamber 100. Above the top wall of the reaction chamber 100, an inner coil 12 corresponding to a central region in the reaction chamber 100 is disposed. The outer coil 13 corresponds to an edge region within the reaction chamber 100. The input of the impedance matching device 10 is electrically connected to the RF power source 11 and the output terminal is connected to the current distributor for matching the input impedance and the output impedance of the RF power source 11. The current distributors are electrically connected to the inner coil 12 and the outer coil 13, respectively. Specifically, as shown in FIG. 1, the current divider includes a current distribution circuit including a first inductor L1, a first variable capacitor C1, a first impedance R1, and a second impedance R2, wherein: the first inductor After L1 is connected in parallel with the first variable capacitor C1, the inner coil 12 and the first impedance R1 are sequentially connected in series to form a first branch; the outer coil 13 and the second impedance R2 are connected in series to form a second branch. The first leg and the second leg are connected in parallel between the output of the impedance matcher 10 and ground. The RF current can be distributed between the inner coil 12 and the outer coil 13 by adjusting the first variable capacitor C1. The power output from the RF power source 11 is thereby distributed between the inner coil 12 and the outer coil 13 to form a uniform plasma distribution in the central region and the edge region in the reaction chamber 100.

Fig. 2 is another circuit diagram of the current distribution circuit of Fig. 1. Referring to FIG. 2, the current distribution circuit includes a second inductor L2, a third impedance R3, a third inductor L3, a second variable capacitor C2, and a fourth impedance R4. The second inductor L2, the inner coil 12 and the third impedance R3 are sequentially connected in series to form a first branch; the third inductor L3 and the second variable capacitor C2 are connected in parallel, and then sequentially connected in series with the outer coil 13 and the fourth impedance R4. Form a second branch. The first leg and the second leg are connected in parallel between the output of the impedance matcher 10 and ground. In this case, the power output from the radio frequency power source 11 can be distributed and adjusted between the inner coil 12 and the outer coil 13 by adjusting the second variable capacitor C2.

It can be directly seen from FIG. 1 and FIG. 2 that the current distribution circuit in FIG. 1 is composed of four electronic devices (ie, the first inductance L1, the first variable capacitance C1, the first impedance R1, and the second impedance R2). The composition; the current distribution circuit in FIG. 2 is composed of five electronic devices (ie, the second inductance L2, the third impedance R3, the third inductance L3, the second variable capacitance C2, and the fourth impedance R4). The number of electronic devices is large, resulting in a relatively scattered circuit structure for achieving impedance matching and power distribution functions, low integration, and high cost.

The present invention is directed to at least one of the technical problems existing in the prior art, and an apparatus and a semiconductor processing apparatus for achieving impedance matching and power distribution are proposed.

To solve one of the above problems, the present invention provides an apparatus for implementing impedance matching and power distribution, comprising a power distribution circuit and an impedance matching circuit, the input of the impedance matching circuit being electrically connected to a radio frequency power source, the power The distribution circuit includes at least two branches, each of the branches including an upstream end and a downstream end, and an upstream end of each of the branches is connected to an output of the impedance matching circuit, and The downstream end is connected to the external device, and each of the branches is connected in series with a power distribution unit, and the power distribution unit includes only one first variable capacitor.

Wherein, the device further includes an input port and an output port group corresponding to the branch one-to-one, the impedance matching circuit is connected to the radio frequency power source through the input port, and each of the output port groups includes a first output port and a second Output 埠, the first output 电 is electrically connected to a downstream end of the corresponding branch and an end of the external device corresponding to the branch, and the second output 电 is electrically connected to the level ground and the other end of the external device respectively .

The external devices corresponding to the at least two branches are sequentially disposed, and at least the second output port of the output port group corresponding to the external device located at the outermost edge is connected in series with the level ground. A fixed capacitor.

Wherein, in addition to the output group corresponding to the external device located at the center, a first fixed capacitance is connected in series between the second output port of each of the remaining output groups and the level.

The impedance matching circuit includes: a second variable capacitor connected in series between the input end and the output end of the impedance matching circuit; and a third variable capacitor, one end of which is connected to the input end of the impedance matching circuit, and the other end Pick up the ground.

The impedance matching circuit further includes a first inductor, and the first inductor and the second variable capacitor are connected in series with each other and connected between the input end and the output end of the impedance matching circuit.

The impedance matching circuit further includes: a second fixed capacitor disposed in parallel at both ends of the second variable capacitor or in parallel at both ends of the third variable capacitor.

Wherein, the means for achieving impedance matching and power distribution further includes a first detector, a second detector, a controller and an actuator. The first detector is configured to detect a current of each of the branches, and send the detection result to the controller; the second detector is connected to the input port, the input end of the impedance matching circuit, and the controller respectively, Detecting the load impedance of the RF power source and detecting The current and the load impedance detected by the second detector send an adjustment signal to the actuator; the actuator is configured to adjust each of the first variable capacitor and the impedance tunable component in the impedance matching circuit according to the adjustment signal .

Wherein, the first detector comprises a current sensor corresponding to the branch one-to-one, the current sensor being connected in series on the corresponding branch.

As another technical solution, the present invention also provides a semiconductor processing apparatus including the apparatus for achieving impedance matching and power distribution provided by the above various aspects of the present invention.

The invention has the following beneficial effects:

The device for achieving impedance matching and power distribution provided by the present invention, the power distribution unit on each branch includes only one first variable capacitor, and therefore, two external devices are disposed on the upper portion of the top wall of the reaction chamber ( That is, when the inner coil and the outer coil are used, the power distribution circuit only needs two first variable capacitors, which reduces the number of electronic devices and improves the use compared with the prior art requiring 4 to 5 electronic devices. The compactness and integration of the device for achieving impedance matching and power distribution while reducing costs. Especially when the number of external devices is increased, the number of electronic devices is reduced more and more, and the above advantages are more obvious.

The semiconductor processing apparatus provided by the invention adopts the apparatus for realizing impedance matching and power distribution provided by the invention, which not only can reduce the cost, but also can improve the integration degree of the apparatus and reduce the volume of the apparatus.

10‧‧‧impedance matcher

11‧‧‧RF power supply

12‧‧‧ inner coil

13‧‧‧Outer coil

20‧‧‧ Input埠

21, 22‧‧‧ output group

23‧‧‧Power distribution circuit

24‧‧‧ impedance matching circuit

25‧‧‧ Current Sensor

26‧‧‧Detector

27‧‧‧ Controller

28‧‧‧Executive agency

30‧‧‧Reaction chamber

31‧‧‧Media window

32‧‧‧ gas nozzle

33‧‧‧ lower electrode base

34‧‧‧ inner coil

35‧‧‧Outer coil

36‧‧‧matcher

37, RF‧‧‧RF power supply

100‧‧‧reaction chamber

211, 212, 221, 222‧‧‧ Output埠

231, 231’ ‧ ‧ branch road

C1, C2, C11, C11', C12, C13‧‧‧ variable capacitors

C21, C22‧‧‧ fixed capacitor

L1, L2, L3‧‧‧ inductance

R1, R2, R3, R4‧‧‧ impedance

S‧‧‧ wafer

S1, S2, S3, S4, S5, S6‧‧ steps

1 is a schematic structural view of a typical semiconductor device; FIG. 2 is another circuit diagram of the current distribution circuit of FIG. 1; FIG. 3 is a schematic structural diagram of a device for implementing impedance matching and power distribution according to an embodiment of the present invention, and FIG. 4 is a schematic diagram of impedance matching and power provided by an embodiment of the present invention. FIG. 5 is a schematic structural diagram of a second apparatus for implementing impedance matching and power allocation according to an embodiment of the present invention; FIG. 6 is a third embodiment of the present invention. A schematic structural diagram of an apparatus for implementing impedance matching and power allocation; and FIG. 7 is a schematic structural diagram of a fourth apparatus for implementing impedance matching and power distribution according to an embodiment of the present invention.

In order to enable those skilled in the art to better understand the technical solutions of the present invention, the apparatus and semiconductor processing apparatus for implementing impedance matching and power distribution provided by the present invention will be described in detail below with reference to the accompanying drawings.

FIG. 3 is a schematic structural diagram of a first device for implementing impedance matching and power distribution applied to a reaction chamber according to an embodiment of the present invention. Referring to FIG. 3, the reaction chamber 30 includes a dielectric window 31 and a gas nozzle 32 extending from the outside of the reaction chamber 30 through the dielectric window 31 into the reaction chamber 30 for use in the reaction chamber 30. The process gas is internally transported; the bottom region in the reaction chamber 30 is provided with a lower electrode base 33 for carrying the wafer S, the lower electrode base 33 is electrically connected to the RF power source 37 through the matcher 36, and the RF power source 37 is used for the wafer S A negative bias is provided; an inner coil 34 corresponding to a central region within the reaction chamber 30 and an outer coil 35 corresponding to an edge region within the reaction chamber 30 are disposed above the dielectric window 31.

The device for implementing impedance matching and power distribution provided by the embodiment of the present invention is disposed between the RF power source RF and the inner coil 34 and the outer coil 35 for matching the input impedance and the output impedance of the RF power source RF and the RF power source RF. The output RF power is distributed between the inner coil 34 and the outer coil 35 such that radio frequency power is coupled to the central and edge regions within the reaction chamber 30 via the inner coil 34 and the outer coil 35, respectively, thereby centering the central region and The process gas in the edge region is excited to form a plasma, which is physically and/or chemically reacted with the surface of the wafer S by means of plasma to etch, deposit or otherwise process the wafer S.

In the present embodiment, the means for achieving impedance matching and power distribution includes a power distribution circuit 23, an impedance matching circuit 24, a first detector, a second detector 26, a controller 27, and an actuator 28.

The input end of the impedance matching circuit 24 is electrically connected to the RF power source RF. The frequency of the RF power source RF may be any one of 400 kHz, 2 MHz, 13 MHz, 27 MHz, 4 MHz, and 60 MHz. The power distribution circuit 23 includes at least two branches (231 and 231'), wherein the upstream end of the branch (231, 231') is connected to the output of the impedance matching circuit 24, downstream of the branch (231, 231') The end is used to connect to an external device. The upstream end of the so-called branch (231, 231') refers to the end of the branch (231, 231') that is connected to the impedance matching circuit 24; the downstream end of the so-called branch (231, 231') refers to It is the end of the branch (231, 231') that is connected to the external device. The so-called upstream and downstream, is in the direction of power transmission in the circuit. In the present embodiment, the external device includes an inner coil 34 and an outer coil 35. At this time, the branch 231 is connected to the inner coil 34, and the branch 231' is connected to the outer coil 35. The structure of the inner coil 34 or the outer coil 35 includes, but is not limited to, a planar coil structure, a three-dimensional coil structure, or a partial planar portion three-dimensional coil structure.

In addition, a power distribution unit is connected in series to each branch (231, 231'), and the power distribution unit includes only one first variable capacitor (C11, C11'). That is, the first variable capacitor C11 is connected in series to the branch 231, and the first variable capacitor C11' is connected in series to the branch 231'.

It can be seen from the above that the apparatus for implementing impedance matching and power distribution provided by the embodiment of the present invention has two external devices (ie, the inner coil 34 and the outer coil 35) disposed above the reaction chamber 30, and the power is The distribution circuit 23 correspondingly requires only two electronic devices (ie, only two first variable capacitors (C11 and C11') are required, wherein the first variable capacitor C11 corresponds to the inner coil 34, and the first variable capacitor C11' Corresponding to the outer coil 35), which reduces the number of electronic devices compared to the prior art requiring 4 to 5 electronic devices, and improves the compactness and integration of the device for achieving impedance matching and power distribution. Degree, while reducing costs. Especially when the number of external devices is increased, the number of electronic devices is reduced more and more, and the above advantages are more obvious.

As shown in Fig. 3, the apparatus for achieving impedance matching and power distribution further includes an input port 20 and an output port group (21, 22) in one-to-one correspondence with the branches (231, 231'). In the present embodiment, the input of the impedance matching circuit 24 is connected to the RF power source RF via the input port 20. The power distribution circuit 23 includes two branches (231 and 231'), and accordingly, the apparatus includes an output stack 21 corresponding to the branch 231 and an output stack 22 corresponding to the branch 231'. The output port group 21 includes a first output port 211 and a second output port 212. The first output port 211 is respectively connected to the downstream end of the branch circuit 231 and the external device corresponding to the branch circuit 231 (ie, the inner coil 34). One end is electrically connected, and the second output port 212 is electrically connected to the level ground and the other end of the external device (ie, the inner coil 34); the output port group 22 includes a first output port 221 and a second output port 222, the first output The 埠221 is electrically connected to the downstream end of the branch 231' and one end of the external device (ie, the outer coil 35) corresponding to the branch 231', and the second output port 222 and the external device (ie, the outer coil 35) The other end is electrically connected and electrically connected to the level via the first fixed capacitor C21. The input port 20, the first output port 211 and the second output port 212 of the output port group 21, and the first output port 221 and the second output port 222 of the output port group 22 can be set to plug-in type, therefore, When the output unit group 21 is electrically connected to the inner coil 34, the output unit group 22 is electrically connected to the outer coil unit 35, and the input port 20 is electrically connected or disconnected from the radio frequency power source, the plugging can be performed by plugging and unplugging. The overall installation and maintenance of the structure.

It has been found through research that if the second output port 222 is directly connected to the ground, the voltage across the outer coil 35 will be unequal, resulting in uneven plasma distribution in the edge portion of the reaction chamber 30 corresponding to the outer coil 35. Not conducive to the uniformity of the process. In this embodiment, the first fixed capacitor C21 is further connected in series between the second output port 222 and the level ground, that is, the first variable capacitor C11' on the branch 231' corresponding to the outer coil 35 is connected in series. The outer coil 35 is further connected in series with the first fixed capacitor C21, so that a structure in which the impedance is negative to positive and negative again is formed between the branch 231' and the level ground, so that the current and voltage on the outer coil 35 are symmetrically distributed. Further uniform distribution of the plasma in the edge regions within the reaction chamber 30 can be achieved.

In addition, in the apparatus for implementing impedance matching and power distribution provided by the embodiment of the present invention, the structure of the capacitor series inductance (that is, the first variable capacitor C11 is connected in series with the coil 34 and the level is connected to the ground) is easy to achieve series resonance. The effect is that the current on the corresponding branch 231 is the largest under this resonance effect, and the potential of the connection point of the first variable capacitor C11 and the inner coil 34 is the highest. The higher the potential, the better the priming, and the inner coil 34 is close to the gas nozzle 32, thereby expanding the priming window of the plasma, thereby increasing the application window of the reaction chamber 30.

The impedance matching circuit 24 includes a second variable capacitor C12, a third variable capacitor C13, and a first inductor L1. The second variable capacitor C12 and the first inductor L1 are connected in series with each other and connected between the input end and the output end of the impedance matching circuit 24; one end of the third variable capacitor C13 is connected to the input end of the impedance matching circuit 24, and the other end is connected Level. .

The first detector includes two current sensors 25. Each of the branch 231 and the branch 231' is provided with a current sensor 25 for detecting the current of the branch (231 or 231'), and transmitting the detected result to the controller 27.

The second detector 26 is connected to the input port 20, the input of the impedance matching circuit 24, and the controller 27, respectively, for detecting the load impedance of the RF power source RF, and transmitting the detected load impedance to the controller 27.

The controller 27 is coupled to the actuator 28 for transmitting an adjustment signal to the actuator 28 based on the current detected by the first detector and the load impedance detected by the second detector 26; the actuator 28 is operative to adjust based on the adjustment signal Each of the first variable capacitors (C11, C11') and the impedance tunable element in the impedance matching circuit 24, the so-called impedance tunable element, refers to an element capable of changing the impedance of the impedance matching circuit 24 by adjusting, in this embodiment The impedance tunable component includes a second variable capacitor C12 and a third variable capacitor C13. The actuator 28 is configured to adjust the first variable capacitor (C11, C11'), the second variable capacitor C12 and the third variable capacitor C13 according to the adjustment signal, that is, adjust the first variable capacitor (C11, C11') The positions of the active ends of the second variable capacitor C12 and the third variable capacitor C13 are used to change the impedance values of the respective series connected in the circuit. Specifically, the actuator 28 includes a stepper motor.

It should be noted that, in the prior art, the impedance matching circuit 24 is separately controlled by the two controllers for impedance matching and the power distribution circuit 23 performs power allocation. In the embodiment, the same controller 27 is used to control the impedance. The load matching circuit 24 and the power distribution circuit 23 can further reduce the cost and improve the integration as compared with the prior art.

The working process of the apparatus for implementing impedance matching and power allocation provided by this embodiment is described in detail below with reference to FIG. 4, which specifically includes the following steps:

In step S1, the second detector 26, the controller 27, the actuator 28 and the impedance matching circuit 24 cooperate to perform impedance matching. Specifically, the controller 27 calculates an adjustment amount that each of the second variable capacitor C12 and the third variable capacitor C13 needs to be adjusted according to the load impedance detected by the second detector 26, and sends a corresponding adjustment signal to the actuator 28 to execute The mechanism 28 adjusts the positions of the movable ends of the second variable capacitor C12 and the third variable capacitor C13 in accordance with the adjustment signal.

In step S2, the controller 27 immediately determines whether impedance matching is currently performed according to the load impedance detected by the second detector 26. If yes, the process proceeds to step S3; if not, returns to step S1.

In step S3, the first detector, the controller 27, the actuator 28 and the power distribution circuit 23 cooperate to start power distribution. Specifically, the first detector detects the power of each branch (231, 231') Flow, and send the detection result to the controller 27, which calculates the power of each branch (231, 231') based on the current of each branch (231, 231'), and calculates each based on the power value The first variable capacitor (C11, C11') requires an adjusted adjustment amount and sends a corresponding adjustment signal to the actuator 28, and the actuator 28 adjusts each of the first variable capacitors (C11, C11') according to the adjustment signal. The location of the active end.

In step S4, the controller 27 immediately determines whether the required power allocation ratio has been reached based on the power on each of the branches (231, 231'), and if so, proceeds to step S5; if not, returns to step S3.

In step S5, the controller 27 determines whether impedance matching is currently achieved based on the load impedance detected by the second detector 26; if yes, the process proceeds to step S6; if not, returns to step S1.

In step S6, the controller 27 determines whether the process is completed, and if so, the process ends; if not, proceeds to step S5.

In step S4, two branches can be determined according to whether the current ratio flowing through the two branches (231, 231') (i.e., the ratio of the current flowing through the outer coil 35 and the inner coil 34) reaches the required current distribution ratio. Whether the power on the road (231, 231') reaches the required power distribution ratio. The ratio of the current flowing through the outer coil 35 and the inner coil 34 required in different processes is also different. For example, the ratio of the current flowing through the outer coil 35 required by a process A to the current flowing through the inner coil 34 is 1:3. The ratio of the current flowing through the outer coil 35 required by the process B to the current flowing through the inner coil 34 is 1:1, and the ratio of the current flowing through the outer coil 35 required by the process C to the current flowing through the inner coil 34 is 3: 1, etc., this ratio can be limited to a certain range according to specific process requirements (for example, the ratio of the current flowing through the outer coil 35 to the current flowing through the inner coil 34 is in the range of 1:9 to 9:1) Any ratio value. By changing the current flowing through the inner coil 34 and the current flowing through the outer coil 35, a uniform electromagnetic field distribution is formed, thereby forming a uniform plasma distribution, so that the uniformity of the wafer S after the completion of the process satisfies the requirements.

It should be noted that although the impedance matching circuit 24 adopts the circuit structure shown in FIG. 3 in the present embodiment, the present invention is not limited thereto. In practical applications, the impedance matching circuit 24 may also adopt other circuit structures. For example,

Referring to FIG. 5, there is shown a schematic structural diagram of a second apparatus for implementing impedance matching and power distribution according to an embodiment of the present invention. Compared with the impedance matching circuit 24 shown in FIG. 3, the impedance matching circuit 24 in FIG. 5 omits the first inductance L1 in FIG. 3, which can also achieve impedance matching and has fewer electronic devices. The volume of the device for achieving impedance matching and power distribution provided by this embodiment is further reduced, and the cost is further reduced.

Referring to FIG. 6, there is shown a schematic structural diagram of a third apparatus for implementing impedance matching and power distribution according to an embodiment of the present invention. Compared with FIG. 5, the impedance matching circuit 24 in FIG. 6 further includes a second fixed capacitor C22, and the second fixed capacitor C22 is disposed in parallel at both ends of the second variable capacitor C12, so that a higher precision impedance can be performed. Matching adjustments reduce the occurrence of overshoot problems, making the stability of the impedance matching adjustment process better.

Referring to FIG. 7, a schematic structural diagram of a fourth apparatus for implementing impedance matching and power distribution according to an embodiment of the present invention is shown. Compared with FIG. 5, the impedance matching circuit 24 in FIG. 7 further includes a second fixed capacitor C22, and the second fixed capacitor C22 is disposed in parallel at both ends of the third variable capacitor C13, so that the second can be reduced. The current limitation of the variable capacitor C12 enables high power applications of the device.

It should be noted that the apparatus for implementing impedance matching and power allocation provided by the embodiments of the present invention is not limited to the case of applying two external devices, and may also be used for the case of at least three external devices, and the specific circuit design. The principle is similar to the design principle when two external devices are applied, and will not be described in detail herein; and the external device is not limited to the case of the coil, and may be other devices that can be used.

It should be further noted that when at least three external devices are sequentially placed, at least three external devices respectively correspond to a central region of the reaction chamber 30 that is radially divided and at least two annular regions, each of which is externally connected. It is used to excite the gas in the corresponding area to form a plasma. As in the above working principle, in order to improve the uniformity of the plasma in the reaction chamber 30, the chamber is less connected in series between the second output 埠 and the level ground of the output 埠 group corresponding to the external device located at the extreme edge. There is a first fixed capacitor C21; in order to further improve the uniformity of the plasma distribution in the reaction chamber 30, in addition to the output group corresponding to the external device located at the center, the second output of each of the remaining output groups A first fixed capacitor C21 is connected in series between the 埠 and the level ground.

As another technical solution, the embodiment further provides a semiconductor processing apparatus using the apparatus for achieving impedance matching and power distribution provided by the above embodiments of the present invention.

The semiconductor body processing apparatus provided by the embodiment of the present invention can reduce the cost and reduce the integration of the apparatus and reduce the volume of the apparatus because it adopts the apparatus for implementing impedance matching and power distribution provided by the above embodiments. .

It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

20: Input 埠 21, 22: Output 埠 group 23: Power distribution circuit 24: Impedance matching circuit 25: Current sensor 26: Detector 27: Controller 28: Actuator 30: Reaction chamber 31: Media window 32: Gas nozzle 33: lower electrode base 34: inner coil 35: outer coil 36: matcher 37, RF: radio frequency power supply 211, 212, 221, 222: output 埠 231, 231': branches C11, C11', C12, C13: Variable capacitor C21: Fixed capacitor L1: Inductor S: Wafer

Claims (10)

An apparatus for implementing impedance matching and power distribution, comprising a power distribution circuit and an impedance matching circuit, wherein an input end of the impedance matching circuit is electrically connected to a radio frequency power supply, the power distribution circuit includes at least two branches, each of the The branch includes an upstream end and a downstream end, and an upstream end of each branch is connected to an output end of the impedance matching circuit, and a downstream end thereof is connected to the external device, wherein each branch is connected in series a power distribution unit, the power distribution unit includes only one first variable capacitor; the device further includes an output port group corresponding to the branch one-to-one, each of the output port groups including a first output port and a second output port The first output port is electrically connected to a downstream end of the corresponding branch and an end of the external device corresponding to the branch, and the second output port is electrically connected to the level ground and the other end of the external device respectively; The first fixed capacitor is connected in series between the second output port of the output port group corresponding to the external device located at the outermost edge and the level ground. The apparatus for achieving impedance matching and power distribution according to claim 1, wherein the apparatus further includes an input port through which the impedance matching circuit is connected to the RF power source. The device for implementing impedance matching and power distribution according to claim 2, wherein the external devices corresponding to the at least two branches are sequentially disposed. The apparatus for achieving impedance matching and power distribution according to claim 3, characterized in that, in addition to the output group corresponding to the external device located at the center, each of the outputs 埠A first fixed capacitance is connected in series between the second output 组 of the group and the level ground. The apparatus for achieving impedance matching and power distribution according to any one of claims 1 to 4, wherein the impedance matching circuit comprises: a second variable capacitor connected in series to the impedance Matching between the input and output of the circuit; The third variable capacitor has one end connected to the input end of the impedance matching circuit and the other end connected to the ground. The device for implementing impedance matching and power distribution according to claim 5, wherein the impedance matching circuit further includes a first inductor, and the first inductor and the second variable capacitor are connected in series and connected to each other. Between the input and output of the impedance matching circuit. The device for implementing impedance matching and power distribution according to claim 5, wherein the impedance matching circuit further comprises: a second fixed capacitor disposed in parallel at both ends of the second variable capacitor Or in parallel at both ends of the third variable capacitor. The apparatus for achieving impedance matching and power distribution according to any one of claims 2 to 4, characterized in that the apparatus further comprises a first detector, a second detector, a controller, and An actuator, the first detector is configured to detect a current of each branch, and send the detection result to the controller; the second detector and the input port, the input end of the impedance matching circuit, and the controller respectively Connected to detect a load impedance of the RF power source, and send the detection result to the controller; the controller is connected to the actuator for detecting the current detected by the first detector and the second detector The resulting load impedance sends an adjustment signal to the actuator; the actuator is configured to adjust each of the first variable capacitor and the impedance tunable element in the impedance matching circuit based on the adjustment signal. The device for implementing impedance matching and power distribution according to claim 8 is characterized in that the first detector comprises a current sensor corresponding to the branch one-to-one, the current sensor is connected in series On the corresponding branch road. A semiconductor processing apparatus, comprising the apparatus for achieving impedance matching and power distribution according to any one of claims 1 to 9.