CN107305830A - Capacitance coupling plasma processing unit and method of plasma processing - Google Patents
Capacitance coupling plasma processing unit and method of plasma processing Download PDFInfo
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- CN107305830A CN107305830A CN201610246809.1A CN201610246809A CN107305830A CN 107305830 A CN107305830 A CN 107305830A CN 201610246809 A CN201610246809 A CN 201610246809A CN 107305830 A CN107305830 A CN 107305830A
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- processing unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of capacitance coupling plasma processing unit and method of plasma processing, the uniformity to improve semiconductor processes.The capacitance coupling plasma processing unit, including：Reaction chamber, is provided with roof, side wall and bottom wall；Top electrode, is arranged on the roof；Bottom electrode, is oppositely arranged in the reaction chamber, and with the Top electrode；Radio frequency power source, puts on the bottom electrode；Bias power source, puts on the bottom electrode；Impedance regulating, one end of the impedance regulating connects the Top electrode or the side wall, other end ground connection.
Description
Technical field
The present invention relates to the capacitance coupling plasma (Capacitively for processing semiconductor devices
Coupled Plasma) processing unit, such as capacitance coupling plasma etching device, Capacitance Coupled
Plasma deposition apparatus etc., the method for further relating to process semiconductor devices using said apparatus.
Background technology
In the manufacturing process of semiconductor devices, in order in the semiconductor wafer as pending substrate
Predetermined pattern is formed in the specified layer of upper formation, uses using resist as mask, utilize mostly
The plasma etching treatment that gas ions are performed etching.
As the plasma etching apparatus for carrying out such plasma etching, using various
Device, wherein, main flow is capacitive coupling plasma processing apparatus.
In capacitive coupling plasma etching device, a pair of parallel flat board electricity is configured in chamber
Pole (upper and lower part electrode), applies high by processing gas introduction chamber room, and to an electrode
Frequently, high-frequency electric field is formed between electrode, using the plasma of high-frequency electric field formation processing gas,
Specified layer to semiconductor wafer carries out plasma etching.
Specifically, it is known to apply the high frequency of plasma formation to be formed to upper electrode
Gas ions, the high frequency to lower electrode application ion introducing, are consequently formed appropriate plasma
The plasma etching apparatus of state, thereby, it is possible to carry out the high etching of repeatability with high selectivity
Handle (for example, United States Patent (USP) US6423242).
But, existing capacitance coupling plasma processing unit still has improvement space, particularly exists
In terms of process uniformity.
The content of the invention
According to an aspect of the present invention there is provided a kind of capacitance coupling plasma processing unit, bag
Include：
Reaction chamber, is provided with roof, side wall and bottom wall；
Top electrode, is arranged on the roof；
Bottom electrode, is oppositely arranged in the reaction chamber, and with the Top electrode；
Radio frequency power source, puts on the bottom electrode；
Bias power source, puts on the bottom electrode；
Impedance regulating, one end of the impedance regulating connects the Top electrode or the side
Wall, other end ground connection.
Optionally, the impedance regulating includes a variable condenser.
Optionally, the impedance regulating includes a variometer.
Optionally, the impedance regulating includes a variable condenser and a variable inductance in parallel
Device.
Optionally, the impedance regulating include a single-pole double-throw switch (SPDT), a variable condenser with
One variometer, two output ends of the single-pole double-throw switch (SPDT) connect the variable condenser respectively
With the variometer.
Optionally, Top electrode is grounded by the impedance regulating, and the side wall is directly grounded；
Or, side wall is grounded by the impedance regulating, and Top electrode is directly grounded.
According to another aspect of the present invention there is provided a kind of capacitance coupling plasma processing unit,
Including：
It is plasma between the first electrode and second electrode being oppositely arranged, first and second electrode
Body handles space；
Radio frequency power source, puts on the second electrode；
The first electrode is grounded by an impedance regulating, and the impedance regulating includes one
Variometer.
Optionally, the second electrode is bottom electrode, and the first electrode is Top electrode.
According to a further aspect of the invention there is provided a kind of capacitance coupling plasma processing unit,
Including：
It is plasma between the first electrode and second electrode being oppositely arranged, first and second electrode
Body handles space；
Bias power source, puts on the second electrode；
The first electrode is grounded by an impedance regulating, and the impedance regulating includes one
Variable condenser.
Optionally, a radio frequency power source puts on the second electrode.
Optionally, the impedance regulating includes a variable condenser and a variable inductance in parallel
Device.
Optionally, the impedance regulating include a single-pole double-throw switch (SPDT), a variable condenser with
One variometer, two output ends of the single-pole double-throw switch (SPDT) connect the variable condenser respectively
With the variometer.
Optionally, the second electrode is bottom electrode, and the first electrode is Top electrode.
According to a further aspect of the invention there is provided a kind of method of plasma processing, including：
Pending substrate is put into capacitance coupling plasma processing unit as described above, and adjusted
Save impedance regulating；
Processing gas is passed through to the capacitance coupling plasma processing unit, pending substrate is entered
Row processing.
Brief description of the drawings
Fig. 1 is the structural representation of the capacitance coupling plasma processing unit of one embodiment of the invention
Figure；
Fig. 2 is the structural representation of the capacitance coupling plasma processing unit of another embodiment of the present invention
Figure；
Fig. 3 is the structural representation of the capacitance coupling plasma processing unit of yet another embodiment of the invention
Figure；
It is the etch rate In The Radial Spreading Curve surveyed shown in Fig. 4, to illustrate implementation of the present invention
The excellent effect of example.
Embodiment
Below in conjunction with specific embodiment and accompanying drawing, to capacitance coupling plasma processing unit of the present invention
And method is illustrated.It is emphasized that being only the elaboration of exemplary type here, however not excluded that have other
Utilize embodiments of the present invention.
According to the present invention capacitance coupling plasma processing unit include by multiple walls (such as side wall,
Roof and bottom wall) reaction chamber that encloses, reaction chamber is internally provided with space.Reaction chamber can
It is evacuated.In addition to air inlet, exhaust outlet and substrate access way, the other parts of reaction chamber
Keep closed in processing procedure, be isolated from the outside.Air inlet is connected with outside source of the gas, is used for
Continue in processing procedure to reaction chamber supplying process gas.Exhaust outlet is connected with outside pump, uses
In the waste gas produced in processing procedure is discharged into reaction chamber, it is also used for carrying out the air pressure in reaction chamber
Control.The processing unit also includes upper and lower electrode and the high frequency power source being connected with them
(e.g., radio frequency power source with bias power source), for exciting plasma and plasma
Energy is controlled.Fig. 1 is the capacitance coupling plasma processing unit of one embodiment of the invention
Structural representation, be mainly used to show the position relationship and high frequency work(of upper and lower electrode and side wall
Bang path of the rate in reaction chamber, thus, it does not show less related structure (such as roof,
Bottom wall, air inlet, exhaust outlet, substrate access way etc.).
Such as Fig. 1, parallel Top electrode (first electrode) 2 is relative with bottom electrode (second electrode) 4
Set, (plasma of generation is excited for plasma processing space between upper and lower electrode 2,4
Body is mainly concentrated in the space).The roof that Top electrode may be generally disposed at reaction chamber (is not schemed
Show) on, or Top electrode can also be regarded as to a part for roof.In addition, the lower section of Top electrode 2
Gas spray 3 also can be set, the passage of reaction chamber is entered as reacting gas.Bottom electrode 4 leads to
It is normally placed on electrostatic chuck (electrostatic chuck), and pending substrate W can be consolidated
It is scheduled on the upper surface of electrostatic chuck.
Radio frequency power source (being usually a high frequency power generator) (the HF generators shown in figure)
The bottom electrode 4 is put on, for the reacting gas between upper/lower electrode is excited as plasma.
To improve the efficiency of feed-in, an impedance matching net can be set between radio frequency power source and bottom electrode 4
Network (impedance matching network) (the HF matching networks shown in figure).Radio frequency work(
The frequency in rate source is typically larger than 10M, such as can be 60M or 13.56M etc..
Bias power source (is usually a high frequency power generator, frequency of its frequency than radio frequency power source
Rate is low, thus can be described as the high frequency power generator compared with low frequency) (the LF generators shown in figure)
The bottom electrode 4 is similarly applied to, for controlling the distribution of energy of plasma.To improve its feedback
The efficiency entered, can set an impedance matching network between bias power source and bottom electrode 4
(impedance matching network) (the LF matching networks shown in figure).Bias power
The frequency in source is typically smaller than 5M, such as may be selected to be 2M or 500K etc..
The Top electrode for being not applied to high frequency power source (e.g., radio frequency power source and bias power source) is led to
It can often be grounded.The side wall of reaction chamber is generally also grounded.
In the capacitance coupling plasma processing unit similar with Fig. 1, (but it does not include being connected to
Impedance regulating between electrode and the earth) in, by high frequency power source, (radio frequency power source is inclined
Put power source) and impedance matching network, bottom electrode 4, the side wall 6 of Top electrode 2 and reaction chamber
Constitute radio frequency current circuit.That is, radio-frequency current (or radio-frequency power) mainly has two paths：One
Individual is, through high frequency power source, bottom electrode, plasma, then to enter ground from Top electrode；Another road
Footpath is that then from side, wall enters ground through high frequency power source, bottom electrode, plasma.Radio-frequency current
Size is mainly determined by the impedance of upper and lower electrode, plasma and reaction chamber side wall.Radio-frequency current
Electric current distribution in above-mentioned two path is mainly determined by the impedance of side wall and Top electrode.Generally, this
The composition of a little parts is changeless.So, radio-frequency current just can only by the distribution in each path
It is to determine constant.Due to etching the diversity of process conditions, changeless chamber impedance can only
Meet it is some under the conditions of etching homogeneity requirement, and under certain conditions etch rate can be deteriorated from
And do not reach etch rate uniformity requirement.
Fig. 1 capacitance coupling plasma processing unit by Top electrode 2 with the earth (or ground connection
Circuit) between be connected into an impedance-matching device, may be such that a radio-frequency current path (by upper electricity
The current path of pole) impedance adjustable section (i.e. big I change).Pass through the tune again of the impedance
Section, size of current sub-distribution again that can be to two paths, so as to improve the uniformity of processing.Than
Such as, when the etch rate of substrate intermediate region is very fast and the etch rate in substrate edge region is slower
When, it is possible to increase the impedance of the impedance-matching device, so as to reduce the radio-frequency current of Top electrode, increasing
The radio-frequency current of reaction chamber side wall, and slow down the etch rate of substrate center region, accelerate substrate side
The etch rate in edge region.Again such as, when the etch rate of substrate intermediate region is relatively slow and substrate side
When the etch rate in edge region is very fast, the impedance of the impedance-matching device can be reduced, so that on increasing
The radio-frequency current of electrode, the radio-frequency current for reducing reaction chamber side wall, and accelerate substrate center region
Etch rate, the etch rate for slowing down substrate edge region.
In Fig. 1, the impedance-matching device is a variometer 80.Because the impedance of inductance is
ZL=j ω L, in double frequency (or multifrequency) plasma system, its to high frequency (>10MHz)
Impedance be much larger than to low frequency (<Impedance 10MHz), so its major limitation passes through Top electrode
To the higher-frequency electric current (the radio-frequency power electric current corresponding with radio frequency power source) on ground.Thus, adopt
With variometer, can adjust by Top electrode to and by the high frequency electric of sidewall ground (with
The corresponding radio-frequency power electric current of radio frequency power source) distribution.So, different densities distribution can be produced
Plasma, adjust etch rate distributing homogeneity.
Fig. 2 is the structural representation of the capacitance coupling plasma processing unit of another embodiment of the present invention
Figure.It is differed only in the unique of Fig. 1 embodiments, in Fig. 2, and impedance regulating can for one
Variodenser 82.Because the RF impedance of electric capacity is ZC=1/j ω C, it mainly has to low-frequency current
Restriction effect.So, originally will be from bottom electrode side to the part low-frequency current on ground by Top electrode
Edge is coupled to side wall, so as to influence the sheaths of electrode and crystal column surface to be distributed.Thus, using variable
Capacitor, can adjust the uniformity of plasma sheath distribution, so as to adjust the uniform of etch rate
The angular distribution of property and ion incidence.In addition, by adjusting Top electrode impedance, can adjust,
The radio-frequency voltage and Dc bias amplitude of bottom electrode, so as to adjust the ion energy point performed etching
Cloth.And then improve the uniformity of etching.
Fig. 3 is the structural representation of the capacitance coupling plasma processing unit of yet another embodiment of the invention
Figure.It is differed only in Fig. 1, Fig. 2 embodiment, and in Fig. 3, impedance regulating includes
One single-pole double-throw switch (SPDT) K, a variable condenser 82 ' and a variometer 80 ', the hilted broadsword are double
Throw switch K two output ends connect the variable condenser 82 ' and the variometer respectively
80’.By the single-pole double-throw switch (SPDT), may be such that the impedance regulating variable condenser with can
Switch between varindor, so that it has both advantages concurrently, so as to more extend plasma
Body uniform distribution and etch rate adjustable range.In addition, in other embodiments, in parallel can
Variodenser with variometer can also be not limited to that upper electricity can only be communicated in the way of selecting one
Pole, but with normal open mode be connected with Top electrode.That is, switch can be not provided with, and
It is that Top electrode and the earth are directly connected to the parallel circuit of variable condenser and variometer.
It is the etch rate In The Radial Spreading Curve surveyed shown in Fig. 4, to illustrate implementation of the present invention
The excellent effect of example.What curve (more top curve in figure) wherein, with rectangle was represented is not
(unique difference of the equipment and Fig. 1 devices is that to be lacked etching apparatus with impedance regulating
Impedance regulating) to the etch rate of substrate different zones.It is that a centre is substantially raised
Curve, illustrate that the equipment substantially exceeds substrate edge area to the etch rate of substrate intermediate region
Domain.What it is with circular curve (curve in figure more on the lower) expression is that Fig. 1 devices are different to substrate
The etch rate in region.It is a much smooth curve, shows the etching homogeneity of the device
It is obviously improved.
Each impedance regulating in the various embodiments described above can be also not arranged between Top electrode and ground,
And be provided between the side wall of reaction chamber and the earth, accordingly, Top electrode can be directly grounded.It is logical
The improvement of etching homogeneity equally can be achieved in the radio-frequency current for overregulating side wall path.Its principle is with before
State each embodiment similar.
Although present disclosure is discussed in detail by above preferred embodiment, but it should
Recognize that the description above is not considered as limitation of the present invention.Read in those skilled in the art
Read after the above, a variety of modifications and substitutions for the present invention all will be apparent.Cause
This, protection scope of the present invention should be limited to the appended claims.
Claims (14)
1. a kind of capacitance coupling plasma processing unit, including：
Reaction chamber, is provided with roof, side wall and bottom wall；
Top electrode, is arranged on the roof；
Bottom electrode, is oppositely arranged in the reaction chamber, and with the Top electrode；
Radio frequency power source, puts on the bottom electrode；
Bias power source, puts on the bottom electrode；
Impedance regulating, one end of the impedance regulating connects the Top electrode or the side
Wall, other end ground connection.
2. capacitance coupling plasma processing unit as claimed in claim 1, wherein, it is described
Impedance regulating includes a variable condenser.
3. capacitance coupling plasma processing unit as claimed in claim 1, wherein, it is described
Impedance regulating includes a variometer.
4. capacitance coupling plasma processing unit as claimed in claim 1, wherein, it is described
Impedance regulating includes a variable condenser and a variometer in parallel.
5. capacitance coupling plasma processing unit as claimed in claim 1, wherein, it is described
Impedance regulating includes a single-pole double-throw switch (SPDT), a variable condenser and a variometer, institute
Two output ends for stating single-pole double-throw switch (SPDT) connect the variable condenser and the variable inductance respectively
Device.
6. capacitance coupling plasma processing unit as claimed in claim 1, wherein, upper electricity
Pole is grounded by the impedance regulating, and the side wall is directly grounded；
Or, side wall is grounded by the impedance regulating, and Top electrode is directly grounded.
7. a kind of capacitance coupling plasma processing unit, including：
It is plasma between the first electrode and second electrode being oppositely arranged, first and second electrode
Body handles space；
Radio frequency power source, puts on the second electrode；
The first electrode is grounded by an impedance regulating, and the impedance regulating includes one
Variometer.
8. capacitance coupling plasma processing unit as claimed in claim 7, wherein, it is described
Second electrode is bottom electrode, and the first electrode is Top electrode.
9. a kind of capacitance coupling plasma processing unit, including：
It is plasma between the first electrode and second electrode being oppositely arranged, first and second electrode
Body handles space；
Bias power source, puts on the second electrode；
The first electrode is grounded by an impedance regulating, and the impedance regulating includes one
Variable condenser.
10. capacitance coupling plasma processing unit as claimed in claim 9, wherein, one penetrates
Frequency power source puts on the second electrode.
11. capacitance coupling plasma processing unit as claimed in claim 10, wherein, institute
Stating impedance regulating includes a variable condenser and a variometer in parallel.
12. capacitance coupling plasma processing unit as claimed in claim 10, wherein, institute
Stating impedance regulating includes a single-pole double-throw switch (SPDT), a variable condenser and a variometer,
Two output ends of the single-pole double-throw switch (SPDT) connect respectively the variable condenser with it is described can power transformation
Sensor.
13. capacitance coupling plasma processing unit as claimed in claim 10, wherein, institute
Second electrode is stated for bottom electrode, the first electrode is Top electrode.
14. a kind of method of plasma processing, including：
By pending substrate be put into Capacitance Coupled as described in any one of claim 1 to 13 etc. from
In daughter processing unit, and adjust impedance regulating；
Processing gas is passed through to the capacitance coupling plasma processing unit, pending substrate is entered
Row processing.
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| CN201610246809.1A CN107305830B (en) | 2016-04-20 | 2016-04-20 | Capacitively coupled plasma processing apparatus and plasma processing method |
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| CN201610246809.1A CN107305830B (en) | 2016-04-20 | 2016-04-20 | Capacitively coupled plasma processing apparatus and plasma processing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109961998A (en) * | 2017-12-22 | 2019-07-02 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and the control method monitored based on focus ring thickness |
| CN113838734A (en) * | 2020-06-24 | 2021-12-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6163021A (en) * | 1984-09-03 | 1986-04-01 | Matsushita Electric Ind Co Ltd | Electric discharge machining device |
| US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
| CN1543662A (en) * | 2001-08-16 | 2004-11-03 | 应用材料有限公司 | Adjustable dual frequency voltage dividing plasma reactor |
| CN1734712A (en) * | 2004-07-30 | 2006-02-15 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN101035405A (en) * | 2006-03-09 | 2007-09-12 | 东京毅力科创株式会社 | Plasma treatment device |
| CN101047114A (en) * | 2006-03-30 | 2007-10-03 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN101478857A (en) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment apparatus |
| US20100252199A1 (en) * | 2007-03-30 | 2010-10-07 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
| CN101960561A (en) * | 2008-03-14 | 2011-01-26 | 应用材料股份有限公司 | Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface |
| CN202978850U (en) * | 2012-12-19 | 2013-06-05 | 中微半导体设备(上海)有限公司 | Plasma treatment chamber and radiofrequency matching circuit thereof |
| CN103219216A (en) * | 2012-01-20 | 2013-07-24 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN103311082A (en) * | 2012-03-13 | 2013-09-18 | 中微半导体设备(上海)有限公司 | Radio frequency matching network and plasma processing chamber applying same |
| CN103531429A (en) * | 2013-10-31 | 2014-01-22 | 中微半导体设备(上海)有限公司 | Plasma etching device and etching method thereof |
| CN104900569A (en) * | 2014-03-03 | 2015-09-09 | 东京毅力科创株式会社 | Substrate loading device and substrate processing device |
| CN104994676A (en) * | 2011-03-30 | 2015-10-21 | 东京毅力科创株式会社 | Plasma processing apparatus |
-
2016
- 2016-04-20 CN CN201610246809.1A patent/CN107305830B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6163021A (en) * | 1984-09-03 | 1986-04-01 | Matsushita Electric Ind Co Ltd | Electric discharge machining device |
| CN1543662A (en) * | 2001-08-16 | 2004-11-03 | 应用材料有限公司 | Adjustable dual frequency voltage dividing plasma reactor |
| US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
| CN1734712A (en) * | 2004-07-30 | 2006-02-15 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN101035405A (en) * | 2006-03-09 | 2007-09-12 | 东京毅力科创株式会社 | Plasma treatment device |
| CN101047114A (en) * | 2006-03-30 | 2007-10-03 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| US20100252199A1 (en) * | 2007-03-30 | 2010-10-07 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
| CN101478857A (en) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment apparatus |
| CN101960561A (en) * | 2008-03-14 | 2011-01-26 | 应用材料股份有限公司 | Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface |
| CN104994676A (en) * | 2011-03-30 | 2015-10-21 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN103219216A (en) * | 2012-01-20 | 2013-07-24 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN103311082A (en) * | 2012-03-13 | 2013-09-18 | 中微半导体设备(上海)有限公司 | Radio frequency matching network and plasma processing chamber applying same |
| CN202978850U (en) * | 2012-12-19 | 2013-06-05 | 中微半导体设备(上海)有限公司 | Plasma treatment chamber and radiofrequency matching circuit thereof |
| CN103531429A (en) * | 2013-10-31 | 2014-01-22 | 中微半导体设备(上海)有限公司 | Plasma etching device and etching method thereof |
| CN104900569A (en) * | 2014-03-03 | 2015-09-09 | 东京毅力科创株式会社 | Substrate loading device and substrate processing device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109961998A (en) * | 2017-12-22 | 2019-07-02 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and the control method monitored based on focus ring thickness |
| CN109961998B (en) * | 2017-12-22 | 2021-06-08 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and control method based on thickness monitoring of focusing ring |
| CN113838734A (en) * | 2020-06-24 | 2021-12-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
| CN113838734B (en) * | 2020-06-24 | 2023-09-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
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| Publication number | Publication date |
|---|---|
| CN107305830B (en) | 2020-02-11 |
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