CN1734712A - Plasma processing apparatus and method - Google Patents
Plasma processing apparatus and method Download PDFInfo
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- CN1734712A CN1734712A CN 200510088802 CN200510088802A CN1734712A CN 1734712 A CN1734712 A CN 1734712A CN 200510088802 CN200510088802 CN 200510088802 CN 200510088802 A CN200510088802 A CN 200510088802A CN 1734712 A CN1734712 A CN 1734712A
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Abstract
To improve a uniformity in etching treatment on wafer surface. An electrical property tuning section 20 is arranged for an upper electrode 4 countering a lower electrode 3 to which high frequency power for plasma generation is supplied. The electrical property tuning section 20 can adjust impedance, with respect to the frequency of a high frequency power supplied to the lower electrode 3, in the circuit on the side of the upper electrode 4 as viewed from the plasma P side so that the circuit may not resonate. The uniformity of etching treatment improves by adjusting the foregoing impedance to miss the resonance point at the time of etching treatment.
Description
Technical field
The present invention relates to plasma processing apparatus and method of plasma processing.
Background technology
For example, in the manufacturing process of semiconductor device or liquid crystal indicator etc., for example be etched in the etch processes of the film that forms on the substrate or on the surface of substrate, form the film forming processing etc. of electrode or dielectric film.These etch processes or film forming are handled the plasma treatment of using plasma to come treatment substrate that adopt more.
Above-mentioned plasma treatment is carried out in plasma processing apparatus usually.In plasma processing apparatus, the plasma processing apparatus that use along the parallel plate-type that disposes electrode up and down more, plasma processing apparatus for this parallel plate-type, for example, in container handling, to mounting the lower electrode supply high frequency electric power of substrate is arranged by high frequency electric source, produce plasma in the processing space between lower electrode and upper electrode, come treatment substrate by this plasma.
Yet, in recent years, in above-mentioned plasma processing apparatus, for example handle in order to carry out more high-precision etch processes or film forming, in high frequency electric source, adopt short wavelength's high frequency.Under the situation that adopts this short wavelength's high frequency, in handling the space, plasma concentrates on the centre, thereby the plasma density in centre is compared the trend that increases with the plasma density at peripheral position.Therefore, have only the plasma treatment at substrate center position to advance apace, final result is to form uneven situation in real estate.
In order to address the above problem, and following plasma processing apparatus has been proposed, promptly, for example from the outside to the center, increase upper electrode and form convex, make the diffusance equalization of the plasma in the container handling, thereby make the plasma density even (for example with reference to patent documentation 1) in the container handling.Yet,, can not realize making interior etching speed of real estate and film forming speed homogenizing fully even by this device.
[patent documentation 1] (Japan Patent) spy opens the 2003-297810 communique
Summary of the invention
The present invention proposes in view of the above problems, and its purpose is to provide a kind of plasma processing apparatus and method of plasma processing, can reduce the inequality of the etch processes speed in the real estate, improves the uniformity of the processing substrate in the real estate.
To achieve these goals, the present invention is a kind of plasma processing apparatus that uses plasma to come treatment substrate, it is characterized in that, comprising: accommodate the container handling that substrate is handled; The lower electrode of mounting substrate in described container handling; In described container handling, described relatively lower electrode and the upper electrode that disposes; High frequency electric source to one of described at least lower electrode and described upper electrode supply high frequency electric power, produces plasma between described lower electrode and described upper electrode; With the electrical characteristic adjustment part, it adjusts the impedance with respect to the circuit of the electrode one side frequency that is present at least one high frequency in the described container handling, that see from described plasma, so that circuit does not resonate.
According to the present invention, can adjust impedance, so that the circuit of electrode one side does not resonate.According to inventor's checking, by reducing the inequality of the etch processes speed in the real estate in the container handling like this.Therefore, can in real estate, the speed with equalization carry out plasma treatment, thereby can improve the uniformity of the processing substrate in the real estate.
The impedance in the circuit of counter electrode one side relative with the supply electrode of supplying with described High frequency power also can be adjusted in described electrical characteristic adjustment part.Wherein, among the present invention, when under the situation of lower electrode and upper electrode both sides supply high frequency electric power, if with lower electrode as supplying with electrode, then upper electrode becomes counter electrode, if with upper electrode as current electrode, then lower electrode becomes counter electrode.
Described electrical characteristic adjustment part also can have the variable element that is used to change described impedance.Described electrical characteristic adjustment part can also have the control part of adjusting described variable element control group.
Described electrical characteristic adjustment part can also have the impedance detection portion of detecting described impedance.At this moment, described control part also can be according to adjusting described variable element from the testing result of described impedance detection portion, thereby can control group.
Described electrical characteristic adjustment part can also have the electrical characteristic adjusting mechanism that is connected electrode one side of adjusting described impedance, from the electrode surface in the face of described plasma the reactance the circuit of electrical characteristic adjusting mechanism is adjusted into negative value.
Described electrical characteristic adjustment part can also be adjusting described impedance at ± 10 Ω from resonance point in the interior mode that staggers.
In addition, described reactance also can be adjusted to the negative value below-50 Ω in described electrical characteristic adjustment part.At this moment, because the described impedance in the circuit on the electrode is staggered significantly from resonance point, therefore, the electrical properties on the electrode is stable, and the aberrations in property of the electrical properties that produces between the device of plasma treatment of resulting from has obtained reduction.
In addition, described upper electrode can be divided into a plurality of electrode part, and described electrical characteristic adjustment part is provided with respect at least one electrode part.
In addition, in above-mentioned plasma processing apparatus, can have the DC power supply that applies direct voltage at least one side of described upper electrode or described lower electrode.In addition, described upper electrode is applied in above-mentioned direct voltage.
According to the present invention on the other hand, be to use plasma to come the plasma processing apparatus of treatment substrate, it is characterized in that, comprising: accommodate the container handling that substrate is handled; The lower electrode of mounting substrate in described container handling; In described container handling, described relatively lower electrode and the upper electrode that disposes; To one of described at least lower electrode and described upper electrode supply high frequency electric power, between described lower electrode and described upper electrode, produce the high frequency electric source of plasma; With the electrical characteristic adjustment part, adjust the electrical characteristic of the circuit of described electrode one side of seeing from described plasma, do not reach maximum so that flow into the current value of the electric current of electrode from described processing space.
According to the present invention, can adjust the electrical characteristic in the circuit of this electrode one side, do not reach maximum so that flow into the current value of electrode one side.According to inventor's checking, by reducing the inequality of the plasma treatment speed in the real estate in the container handling like this.Therefore, can in real estate, the speed with equalization carry out plasma treatment, thereby can improve the uniformity of the processing substrate in the real estate.
The electrical characteristic in the circuit of counter electrode one side relative with supplying with described High frequency power also can be adjusted in described electrical characteristic adjustment part.
Described electrical characteristic adjustment part also can have the variable element that is used to change described current value.In addition, described electrical characteristic adjustment part can also have the described variable element of adjustment and comes the control part of Control current value.
Described electrical characteristic adjustment part also can have the current value test section that detects described current value.At this moment, described control part also can be according to adjusting described variable element from the testing result of described current value test section, thereby can the Control current value.
Described electrical characteristic also can be adjusted in described electrical characteristic adjustment part, makes described current value reach more than 1/2 of lowest high-current value.
Described upper electrode also can be divided into a plurality of electrode part, has described electrical characteristic adjustment part with respect to an electrode part at least.
In addition, in above-mentioned plasma processing apparatus, can have the DC power supply that applies direct voltage at least one side of described upper electrode or described lower electrode.In addition, described upper electrode is applied in above-mentioned direct voltage.
According to the present invention on the other hand, it is a kind of method of plasma processing, it is characterized in that: in container handling, on the lower electrode that substrate-placing is disposed in relative upper electrode, at least to one of described lower electrode and upper electrode supply high frequency electric power, between described lower electrode and described upper electrode, produce plasma, come treatment substrate by this plasma, wherein, adjustment is with respect to the frequency that is present at least one high frequency in the described container handling, impedance the circuit of electrode one side of seeing from described plasma is not so that described circuit resonates.
As the present invention, circuit is not resonated, and can reduce the inequality of the plasma treatment speed in the real estate in the container handling by the impedance in the circuit of adjusting electrode one side.Therefore, can in real estate, the speed with equalization carry out plasma treatment, can improve the uniformity of the processing substrate in the real estate.
In described method of plasma processing, also can adjust, make described impedance from resonance point stagger ± 10 Ω in.
According to the present invention on the other hand, it is a kind of method of plasma processing, it is characterized in that: in container handling, on the lower electrode that substrate-placing is disposed in relative upper electrode, at least to one of described lower electrode and upper electrode supply high frequency electric power, between described lower electrode and described upper electrode, produce plasma, come treatment substrate by this plasma, wherein, the electrical characteristic of the circuit of described electrode one side that adjustment is seen from described plasma makes the current value that flows into the electric current of electrode from described processing space not reach maximum.
As the present invention,, make the current value of the electric current that flows into electrode one side not reach maximum, and can reduce the inequality of the interior plasma treatment speed of real estate container handling in by adjusting the electrical characteristic on the described electrode.Therefore, can in real estate, the speed with equalization carry out plasma treatment, can improve the uniformity of the processing substrate in the real estate.
In described method of plasma processing, also can adjust the electrical characteristic in the circuit of described counter electrode one side, make the current value of the electric current that flows into counter electrode one side relative not reach maximum with the supply electrode of supplying with described High frequency power.
In described method of plasma processing, also can adjust described electrical characteristic, make described current value reach more than 1/2 of lowest high-current value.
In addition, in above-mentioned method of plasma processing, can apply direct voltage at least one side of described upper electrode or described lower electrode.In addition, described upper electrode imposes direct voltage.
According to the present invention, can reduce the speed inequality of the plasma treatment in the real estate, therefore, can improve the uniformity of the processing substrate in the real estate.
Description of drawings
Fig. 1 is the key diagram of longitudinal section of the brief configuration of the expression plasma-etching apparatus that relates to present embodiment.
Fig. 2 is the ideograph of plasma-etching apparatus that is used to illustrate the circuit impedance of upper electrode one side of seeing from plasma.
Fig. 3 is the ideograph of the brief configuration of expression electrical characteristic adjustment part.
Fig. 4 is the chart that concerns between the inner evenness of expression impedance and etch processes.
Fig. 5 is the chart of the interior rate of etch of the wafer face in each impedance of expression.
Fig. 6 is the chart of inner evenness of the potential difference in the sheath zone of expression in each impedance.
Fig. 7 is the longitudinal section key diagram of brief configuration of the Etaching device of the plasma of expression when measuring impedance automatically.
Fig. 8 is the longitudinal section key diagram of the structure of the both sides that are illustrated in upper electrode and the lower electrode plasma-etching apparatus when high frequency electric source is installed.
Fig. 9 is the longitudinal section key diagram of the structure of the plasma-etching apparatus when being illustrated in lower electrode one side and being provided with the electrical characteristic adjustment part.
Figure 10 is the ideograph of plasma-etching apparatus of impedance that is used to illustrate the circuit of lower electrode one side of seeing from plasma.
Figure 11 is the key diagram of longitudinal section of the structure of the plasma-etching apparatus when being illustrated in upper electrode and being connected with DC power supply.
Figure 12 is the key diagram of longitudinal section of the structure of the plasma-etching apparatus when being illustrated in electrical characteristic and adjusting GND one side of circuit and be provided with DC power supply.
Figure 13 is the key diagram of the longitudinal section of the both sides that are illustrated in upper electrode and lower electrode structure that the plasma-etching apparatus that high frequency electric source and upper electrode link to each other with DC power supply is installed.
Figure 14 is that the both sides that are illustrated in upper electrode and lower electrode are equipped with the key diagram of longitudinal section that high frequency electric source and DC power supply are set at the structure of the plasma-etching apparatus of electrical characteristic when adjusting GND one side of circuit.
Figure 15 is the longitudinal section key diagram of structure that expression possesses the plasma-etching apparatus of divided upper electrode.
Figure 16 is to be the longitudinal section key diagram that is illustrated in the structure of the plasma-etching apparatus when adjusting the electric current that flows into upper electrode.
Symbol description: 1 plasma-etching apparatus, 2 container handlings, 3 lower electrodes, 4 upper electrodes, 11 first high frequency electric sources, 13 second high frequency electric sources, 20 electrical characteristic adjustment parts, 21 electrical characteristics are adjusted circuit, 22 impedance detection portions, 23 control parts, K handles space, P plasma, W wafer
Embodiment
Below, the preferred embodiment for the present invention is described.Fig. 1 is the longitudinal section key diagram of expression as the brief configuration of the plasma-etching apparatus 1 of plasma processing apparatus of the present invention.Wherein, in this specification and accompanying drawing, the structural element that has the identical function structure is in fact marked prosign and omits repeat specification.
As shown in Figure 1, plasma-etching apparatus 1 for example has the container handling that the round-ended cylinder shape is arranged 2 of top opening.Container handling 2 ground connection.Central part in container handling 2 is provided with the lower electrode 3 of the mounting table of double as mounting wafer W.This lower electrode 3 can move up and down by scheming unshowned elevating mechanism.In addition, lower electrode 3 can keep set point of temperature by the thermoregulation mechanism (scheming not shown) that is made of heater that is embedded in inside or temperature measuring portion material etc.
In the courtyard portion of the container handling 2 relative, for example dispose the upper electrode 4 that roughly is disc-shape with the mounting surface of lower electrode 3.Between upper electrode 4 and container handling 2, insulator 5 is installed in the form of a ring, become electric insulation thereby make between upper electrode 4 and the container handling 2.Below upper electrode 4, for example be formed with a plurality of gases hole 4a that spues.The gas hole 4a that spues is communicated with the top gas supply pipe 6 that is connected upper electrode 4.Processing gas, for example HBr gas, O that gas supply pipe 6 and etch processes are used
2The gas supply source of gas etc. (scheming not shown) is connected.Import to processing gas in the upper electrode 4 from spue hole 4a and in container handling 2, supplying with of a plurality of gases from gas supply pipe 6.
In addition, lower electrode 3 is connected by second high frequency electric source 13 of lead 12 and ion introducing usefulness.Second high frequency electric source, 13 ground connection.Second high frequency electric source 13 can be supplied with the High frequency power that for example ion lower than the frequency of above-mentioned first high frequency electric source 11 introduced the 13.56MHz of usefulness to lower electrode 3.By by this second high frequency electric source 13 to lower electrode 3 supply high frequency electric power, and can make the charged particle in the plasma P that in handling space K, generates be induced to wafer W one side.Wherein, also can produce plasma P by the supply of the High frequency power of being undertaken by second high frequency electric source 13.
Plasma-etching apparatus 1 has electrical characteristic adjustment part 20, is used for adjusting the impedance Z of the circuit C1 of upper electrode 4 one sides of seeing from plasma P
C1As shown in Figure 2, in container handling K, generate between the formation zone and upper electrode 4 of plasma P, be formed with sheath (sheath) the region S U of vacuum.In the present embodiment, the circuit C1 of upper electrode 4 one sides of seeing from plasma P comprises: sheath zone SU, upper electrode 4, lead described later 24 and electrical characteristic are adjusted circuit 21 (having merged the zone that is electrically connected with upper electrode 4 and the part of sheath zone SU).In addition, impedance Z
C1Being the impedance of this circuit C1, for example is the frequency that generates first high frequency electric source 11 of usefulness with respect to plasma.Wherein, under upper electrode 4 and situation that high frequency electric source is connected, circuit C1 also comprises this high frequency electric source.
As shown in Figure 1, electrical characteristic adjustment part 20 comprises electrical characteristic adjustment circuit 21, impedance detection portion 22 and control part 23.Electrical characteristic is adjusted circuit 21 and for example is connected with upper electrode 4 by lead 24.For example, as shown in Figure 3, electrical characteristic is adjusted circuit 21 for example by constituting as the variable capacitor 25 of variable element and fixed coil 26 etc.Can change impedance Z by the capacity of change variable capacitor 25
C1
Be connected with the blast pipe 30 that is communicated with exhaust gear (scheming not shown) in the bottom of container handling 2.To be evacuated in the container handling 2 by blast pipe 30, thereby the inside of container handling 2 can be remained on authorized pressure.Wherein, also can in container handling, apply magnetic field at the two side of container handling 2 outer setting magnet.In the case, magnet is variable mode and constituting with magnetic field intensity preferably.
Below, the etch processes that the plasma-etching apparatus 1 that uses said structure is carried out describes.At first, in plasma-etching apparatus 1, for example before the beginning etch processes, impedance detection portion 22 is installed for example on lead 24.By impedance detection portion 22, for example adjust each capability value of the variable capacitor 25 in the circuit 21 and measure impedance Z with respect to electrical characteristic
C1Numerical value.Therefore, the capability value (adjusted value) and the impedance Z of the variable capacitor 25 of electrical characteristic adjustment circuit 21 have for example been grasped
C1Value between dependency relation.According to this dependency relation, in control part 23, set and to make the do not resonate adjusted value of variable capacitor 25 of (resonance series) of circuit C1, for example set impedance Z
C1From resonance point stagger ± 10 Ω are with the such adjusted value of interior setting.Control part 23 is adjusted variable capacitor 25 according to the adjusted value of this setting, with impedance Z
C1Be adjusted into the setting that circuit C1 is not resonated.
Then, as shown in Figure 1, wafer W is moved in the container handling 2, and mounting is on lower electrode 3, then, the gases in the container handling 2 discharged, simultaneously, supply with predetermined process gas from the gas hole 4a that spues from blast pipe 30.At this moment, be maintained at the decompression pressure of regulation in the container handling 2.
Then, for example pass through first high frequency electric source 11 and second high frequency electric source 13, in handling space K, apply high frequency voltage to the High frequency power of the 100MHz of lower electrode 3 supply plasmas generation usefulness and the High frequency power that ion is introduced the 13.56MHz of usefulness.Make the processing gaseous plasmaization of handling space K by this high frequency voltage, produce plasma P.Charged particle among this plasma P is attached to the surface of wafer W, makes the surperficial etched of wafer W.After the etching of carrying out the stipulated time, stop the supply of High frequency power and the supply of processing gas, in container handling 2, wafer W is taken out of, finish a series of etch processes.
Here, in above-mentioned etch processes, to controlled impedance Z
C1Numerical value and the relation between the etch processes result verify.Experiment is to use above-mentioned plasma-etching apparatus 1 to carry out under the following conditions, that is, the flow of handling gas HBr is 90cm
3/ min, processing pressure is 0.4Pa (3mTorr), the High frequency power of 100MHz/13.56MHz is 500/100W.
Fig. 4 is the expression impedance Z
C1And the chart that concerns between the inner evenness of rate of etch (3 σ).H among Fig. 4 represents impedance Z
C1Resonance point.From Fig. 4, can confirm: work as impedance Z
C1When being positioned on the resonance point H, the inner evenness of rate of etch worsens, when making impedance Z
C1When resonance point H staggered, it is good that the inner evenness of rate of etch becomes.Particularly, with impedance Z
C1From resonance point H stagger ± 10 Ω in the time, the inner evenness of rate of etch has obtained good affirmation.
Fig. 5 (a) is the expression impedance Z
C1The chart of the rate of etch of the wafer face when being positioned at resonance point (ER).Fig. 5 (b) is that expression is with impedance Z
C1Stagger+chart of rate of etch during 3 Ω from resonance point.Fig. 5 (c) is that expression is with impedance Z
C1Stagger+chart of rate of etch during 8 Ω from resonance point.
Can confirm from Fig. 5 (a)～(c): make impedance Z
C1Under the situation about staggering from resonance point, rate of etch is significantly improved.In addition, the uniformity of the rate of etch in the wafer face also is improved.
In addition, Fig. 6 (a) is the chart that expression makes the inner evenness (Δ Vdc) of the potential difference among the circuit C1 sheath zone SL (shown in Figure 2) in when resonance.Can estimate out by the caused amount of damage of the etch processes in the wafer surface by the inner evenness (Δ Vdc) of this potential difference.Fig. 6 (b) is that expression is with impedance Z
C1The chart of the inner evenness of the potential difference when resonance point staggers-4 Ω.
Shown in Fig. 6 (a) and (b), can confirm: with impedance Z
C1Under the situation about staggering from resonance point, the inner evenness of the potential difference among the SL of sheath zone is improved, and the damage of etch processes has obtained reduction.
According to above-mentioned execution mode, electrical characteristic adjustment part 20 is set in plasma-etching apparatus 1, adjust the impedance Z the circuit C1 of upper electrode 4 one sides of seeing from plasma P
C1, make circuit C1 not resonate, thereby, the uniformity of the rate of etch in the wafer W face can be improved.Particularly, by with impedance Z
C1Stagger ± setting of 10 Ω from resonance point, can improve rate of etch, further can also reduce the damage that causes because of etch processes.
In the above-described embodiment, adjust the electrical characteristic of upper electrode 4 one sides by the variable capacitor 25 of electrical characteristic adjustment part 20, thereby can change impedance Z fairly simplely
C1
In the above-described embodiment, be to detect impedance Z
C1In time, just be connected impedance detector 22 on the lead 24, still, also can in advance impedance detector 22 be installed on the lead 24 as shown in Figure 7, and the testing result of impedance detector 22 is exported to control part 23.In this case, for example, control part 23 is according to adjust the variable capacitor 25 that electrical characteristic is adjusted circuit 21 from the testing result of impedance detector 22, with impedance Z
C1Be controlled at the setting that circuit C1 does not resonate.Thereby, can automatically adjust impedance Z
C1In addition, in etching treatment procedure, for example also can measure impedance Z in real time by impedance detector 22
C1When because certain is former thereby make impedance Z
C1The numerical value change and the situation near resonance point under, control part 23 for example changes the adjusted value of variable capacitor 25, with impedance Z
C1Be modified to the numerical value that circuit C1 does not resonate.Its result can prevent more reliably that circuit C1 from resonating.Therefore, make the inner evenness of etch processes obtain stable the raising.
As described in the above-mentioned execution mode, when adjusting impedance Z
C1Make under the situation that circuit C1 do not resonate, also can be as shown in Figure 2, electrical characteristic is adjusted reactance X the circuit C2 of circuit 21 1 sides from electrode surface 4a towards the upper electrode 4 of sheath zone SU
C2Be adjusted into negative value.This circuit C2 is the circuit that comprises upper electrode 4, lead 24 and electrical characteristic adjustment circuit 21, reactance X
C2Be the reactance among this circuit C2.
Impedance Z in the general circuit that exists is represented as following formula (1).
Z＝R+iX……(1)
(R represents resistance, and X represents reactance.)
In addition, the resonance series of so-called circuit is meant that the numerical value of reactance X is 0 o'clock resonance.
For the zone of the sheath between plasma P in the plasma-etching apparatus 1 and the upper electrode 4 SU, because capacity, be that the numerical value of reactance is always negative electrically, so, by the reactance X the circuit C2 that electrical characteristic is adjusted circuit 21 directions from electrode surface 4a
C2Be adjusted into negative value, and the reactance of the entire circuit C 1 of electrode surface 4a one side seen from plasma P always can be maintained negative value.In view of the above, because the reactance of circuit C1 can not become 0, so, its resultant impedance Z
C1Be adjusted, circuit C1 is not resonated.In the case, irrelevant with the plasmoid of handling in the K of space, can not cause the generation of resonance on the principle.Wherein, always with the reactance X of circuit C2
C2When being maintained negative value, use the electrical characteristic adjusting mechanism.As this electrical characteristic adjusting mechanism, preferably electrical characteristic is adjusted circuit 21.By the electrical characteristic (reactance) in this electrical characteristic adjusting mechanism is adjusted into expectation numerical value, and with the reactance X among the circuit C2
C2Always be maintained negative value.From this point, this electrical characteristic adjusting mechanism is adjusted circuit 21 as electrical characteristic, both can be the variable element with variable capacitor 25 1 classes, also can be the structure that only is made of retaining element.
In this embodiment, for example, as long as with reactance X
C2Stagger and get final product for negative value more than 50 Ω.In the case, because the reactance of circuit C1 can not become 0, so, can prevent the resonance of circuit C1 reliably, thereby can make the action of plasma-etching apparatus 1 stable.Therefore, for example, can reduce the action deviation (machine error) that produces between a plurality of plasma-etching apparatus.
For at the plasma-etching apparatus 1 described in the above execution mode, be to supply with two kinds of High frequency power to lower electrode 3, still, also can only supply with a kind of High frequency power that plasma generates usefulness to lower electrode 3.
In addition, in the above execution mode, to lower electrode 3 one side supply high frequency electric power, but, also can supply with plasma and generate the High frequency power of usefulness to replace to lower electrode 3 supplies to upper electrode 4 one sides, also can adjust with respect to the impedance the circuit of the lower electrode 3 one sides frequency of this High frequency power, that see from plasma P, this circuit is not resonated.In the case, for example, electrical characteristic is adjusted circuit 21 and is set at lower electrode 3 one sides, and electrical characteristic is adjusted circuit 21 and is connected with lower electrode 3.
And, also can be to both sides' supply high frequency electric power of upper electrode 4 and lower electrode 3, adjust the impedance the circuit of each counter electrode of seeing from plasma P, so that each circuit does not resonate.In the case, as shown in Figure 8, upper electrode 4 and lower electrode 3 both sides all are connected with electrical characteristic and adjust circuit 21.Adjust circuit 21 for the electrical characteristic that is connected with upper electrode 4, it is adjusted with respect to the impedance the circuit of upper electrode 4 one sides frequency, that see from plasma P of the High frequency power of supplying with to lower electrode 3 one sides.Adjust circuit 21 for the electrical characteristic that is connected with lower electrode 3, it is adjusted with respect to the impedance the circuit of lower electrode 3 one sides frequency, that see from plasma P of the High frequency power of supplying with to upper electrode 4 one sides.
In the above embodiment, adjustment is with respect to the impedance in circuit frequency, counter electrode one side of the High frequency power of supplying with to current electrode, so that circuit does not resonate, but, also can adjust impedance, so that circuit does not resonate with respect to other high frequency frequencies of in handling space K, propagating and existing.In the high frequency in this embodiment, comprise higher harmonics that supply because of High frequency power etc. produces etc.In the case, for example, as shown in Figure 9, be connected with lower electrode 3 one sides of high frequency electric source 11,13, be provided with the electrical characteristic adjustment part 20 identical with above-mentioned execution mode.For example, on the lead 10,12 that connects lower electrode 3 and each high frequency electric source 11,13, be connected with electrical characteristic respectively and adjust circuit 21, impedance detection portion 22.
In addition, for example adjust impedance Z the circuit C3 of lower electrode 3 one sides of seeing from plasma P by electrical characteristic adjustment part 20
C3, the circuit C3 of lower electrode 3 one sides is not resonated with respect to being present in the high frequency of handling the regulation in the K of space.As shown in figure 10, the circuit C3 of lower electrode 3 one sides of seeing from plasma P comprises: sheath zone SL, and lower electrode 3, lead 10,12, high frequency electric source 11,13, impedance detection portion 22 and electrical characteristic are adjusted circuit 21.Impedance Z
C3Being the impedance among its circuit C3, for example, is the impedance with respect to the high frequency that produces in handling space K.In addition, in Figure 10, circuit C4 comprises lower electrode 3, lead 10,12, and high frequency electric source 11,13, impedance detection portion 22 and electrical characteristic are adjusted circuit 21, in addition, reactance X
C4It is the reactance among its circuit C4.
More particularly, for example, by electrical characteristic adjustment part 20, for making impedance Z
C3Stagger significantly so that circuit C3 does not resonate from resonance point, for example make the reactance X of circuit C4
C4Staggering on the negative value more than 50 Ω.Therefore, for example, in any case in the treatment state plasma-etching apparatus different, can with respect to high frequency circuit C3 be resonated in high frequency electric source one side with treatment conditions, in all plasma-etching apparatus 1, plasma treatment is stably carried out.Its result makes unbalanced being reduced between the device of plasma treatment.
In addition, more than in the execution mode put down in writing, upper electrode 4 also can be connected with DC power supply.Wherein one is for example shown in Figure 11.Upper electrode 4 is electrically connected by low pass filter 32 and variable DC power supply 31.The variable power supply 31 of this moment also can be a bipolar power supply.Variable DC power supply 31 can be carried out the switch power supply by relay switch 33.The polarity of variable DC power supply 31, current value, magnitude of voltage are all controlled by direct voltage control part 34 with the switch of relay switch 33.For low pass filter 32,, preferably constituted by LR filter or CL filter in order to hinder the first and second high frequency waves power supplys, 11,13 high frequency waves that sent.
Then, apply specified polarity and the big or small direct voltage that is provided by variable DC power supply 31 to upper electrode 4.Thus, make the deposit sputter of adsorbing on the surface of upper electrode 4, can obtain making the effect of the cleaning surfaces of upper electrode 4.In addition, the plasma P that forms in the container handling 2 is dwindled, because the actual effect residence time (residence time) on the wafer W reduces,, can access and make organic mask of photosensitive film etc. be difficult to etched effect so suppress the decomposition of the processing gas of fluorocarbon system.And, because near the electron irradiation that generates upper electrode 4 is on wafer W, so obtain that mask on the upgrading wafer W is formed and the effect of the disappearance of elimination photosensitive film.
And, because with electrical characteristic adjustment part 20 combinations of the plasma etching apparatus 1 of explanation in the above-described embodiment, so can obtain following effect simultaneously: promptly, effect when upper electrode 4 applies direct voltage, and, adjust the impedance Z on the circuit C1 of upper electrode 4 one sides of seeing from plasma P by electrical characteristic adjustment part 20
C1, make loop C1 not resonate, thereby improve the effect of the rate of etch in the wafer W face.
When the direct voltage of the also big negative polarity of the self-deflection voltage Vdc that generates than the surface at upper electrode 4 is applied on the upper electrode 4, the formation zone of plasma P shown in Figure 2 and the further thickening of the zone SU of the sheath between the upper electrode 4.Thus, the impedance Z on the circuit C1 of upper electrode 4 one sides of seeing from plasma P
C1Change (diminishing), with respect to the impedance Z of this variation
C1Adjust and make circuit C1 not resonate, the effect of the rate of etch in the wafer W face that so just can be improved.
Wherein, as shown in figure 12, variable DC power supply 31, low pass filter 32, relay switch 33 are arranged on the GND next door that electrical characteristic is adjusted circuit 21, also can obtain same as shown in figure 11 effect.
In addition, as shown in Figure 8, in plasma-etching apparatus 1, also variable DC power supply 31, low pass filter 32 and relay switch 33 can be set on upper electrode 4 as shown in Figure 13 to both sides' supply high frequency electric power of upper electrode 4 and lower electrode 3.
In addition, as shown in figure 14, provide in the plasma etching apparatus 1 of High frequency power the both sides to upper electrode 4 and lower electrode 3, GND one side that above-mentioned variable DC power supply 31, low pass filter 32 and relay switch 33 is arranged on electrical characteristic adjustment circuit 21 also can obtain identical effect.Wherein, also can replace, but apply direct voltage to upper electrode 3 one sides to upper electrode 4 one sides.In addition, also can apply direct voltage to the both sides of upper electrode 4 and lower electrode 3.
In the described in the above-described embodiment plasma-etching apparatus 1, upper electrode 4 is with discoid and by integrated, still, also can be divided into a plurality of electrode part, and its arbitrary electrode part is provided with electrical characteristic adjustment part 20 relatively.Figure 15 is the figure of the described example of expression, and upper electrode 40 is divided into the 40a of medial electrode portion and centers on the 40b of lateral electrode portion of the ring-type in its outside.Between 40a of medial electrode portion and the 40b of lateral electrode portion, be folded with the insulator 40c of ring-type.The 40a of medial electrode portion ground connection, the 40b of lateral electrode portion for example is connected electrical characteristic by lead 24 and adjusts on the circuit 21.Wherein, the structure of other parts is identical with the plasma-etching apparatus 1 of above-mentioned execution mode.
In addition, when carrying out etch processes, adjust circuit 21 by electrical characteristic and adjust impedance in this circuit, make and do not resonate from the circuit of the 40b of lateral electrode portion one side that plasma P is seen.In the case, for example, be improved at the inner evenness of the etch processes of carrying out with the periphery position of the wafer W of the 40b of lateral electrode portion subtend.So, can improve the etching characteristic of the established part in the wafer face.Wherein, in this embodiment, also electrical characteristic adjustment part 20 can be arranged on the 40a of medial electrode portion, adjust the impedance in the circuit of the 40b of lateral electrode portion one side and the 40a of medial electrode portion one side respectively.Therefore, can improve each regional etching characteristic of wafer W respectively.In addition, can on the 40b of lateral electrode portion, electrical characteristic adjustment part 20 be set yet, and only on the 40a of medial electrode portion, be provided with.
In the above execution mode, adjust the impedance in this circuit, make and not resonate from the circuit of seeing with the plasma P of counter electrode one side of current electrode subtend, but, change an angle, to reach maximum in order making, also can to adjust the electrical characteristic of electrode one side of seeing from plasma P from handling the current value that space K flows into the electric current of electrode.In this case, for example, as shown in figure 16, electrical characteristic adjustment part 50 is set in upper electrode 4 one sides as the counter electrode of plasma-etching apparatus 1.Electrical characteristic adjustment part 50 is for example mainly adjusted circuit 51, current value test section 52 and control part 53 by electrical characteristic and is constituted.
Electrical characteristic is adjusted circuit 51 and is connected with upper electrode 4 by lead 24, and is identical with the electrical characteristic adjustment circuit 21 described in the above-mentioned execution mode, has variable capacitor 25 and fixed coil 26.Can adjust the current value of the electric current that flows into upper electrode 4 by the capacity that changes variable capacitor 25.Current value test section 52 for example is connected with lead 24, detects the current value of the electric current B that flows into upper electrode 4, and can be with its result to control part 53 outputs.In control part 53, be set with the lowest high-current value of the electric current B that tries to achieve in advance.Control part 53 is adjusted the variable capacitor 25 of electrical characteristic adjustment circuit 51 according to the testing result of current value test section 52 and is controlled, and the feasible current value that flows into the electric current B of upper electrode 4 does not reach lowest high-current value.Wherein, the structure of other parts of this routine plasma-etching apparatus 1, identical with above-mentioned execution mode, the Therefore, omited explanation.
In addition, when carrying out etch processes, detect the current value of the electric current B that flows into upper electrode 4 in real time by current value test section 52.Adjust variable capacitor 25 by control part 53 according to the testing result of current value test section 52, make the current value of electric current B not reach lowest high-current value.If adjust like this so that electric current B does not reach maximum, the circuit of then above-mentioned upper electrode 4 one sides does not resonate, so,, can improve the inner evenness of etch processes with the described situation that circuit is not resonated by the adjustment impedance is identical in the above-described embodiment.Particularly, be adjusted at current value under the situation more than 1/2 of the lowest high-current value that flows into upper electrode 4 electric current B, promptly, under the situation of current value＜lowest high-current value of 1/2≤electric current B of lowest high-current value, with in the above-described embodiment described with impedance from resonance point stagger ± 10 Ω are identical with interior situation, can improve rate of etch, and, the damage that causes because of etch processes can also be reduced.
In this embodiment, for example, both can be under the situation of upper electrode 4 supply high frequency electric power, the electrical characteristic of lower electrode 3 one sides that adjustment is seen from plasma P, do not reach maximum so that flow into the current value of the electric current B of lower electrode 3, also can adjust the electrical characteristic on each electrode, not reach maximum so that flow into the current value of both electric currents of upper electrode 4 and lower electrode 3 under the situation of upper electrode 4 and lower electrode 3 both supply high frequency electric power.
In addition, in this embodiment, above-mentioned upper electrode 4 and lower electrode 3 any one can be connected with the variable current power supply at least, at least one that can be in top power supply 4 and bottom power supply 3 applies direct voltage.
In addition, described in above-mentioned execution mode, also upper electrode 4 can be divided into a plurality of electrode part, at least one of this divided electrode part, electrical characteristic adjustment part 50 be set and adjust, not reach maximum so that flow into the current value of the electric current of this electrode part.For example, the 40b of lateral electrode portion with respect to upper electrode shown in Figure 10 40 also can be provided with electrical characteristic adjustment part 50.
More than, an example of embodiments of the present invention is illustrated, still, example that the present invention is not limited thereto also can adopt variety of way.For example, in the present embodiment, the present invention is applicable to plasma-etching apparatus 1, but the present invention goes for also carrying out for example carrying out the plasma processing apparatus that film forming is handled in the plasma processing apparatus of etch processes processing of wafers in addition.In addition, the handled substrate of plasma processing apparatus of the present invention is not limited to wafer, also can be other substrates such as substrate of organic EL substrate, FPD (flat-panel monitor) usefulness.
Practicality on the industry: according to the present invention, in the plasma processing apparatus of substrate, Useful during the uniformity of the processing substrate in improving real estate.
Claims (32)
1. a plasma processing apparatus that uses plasma to come treatment substrate is characterized in that, comprising:
Accommodate the container handling that substrate is handled;
The lower electrode of mounting substrate in described container handling;
In described container handling, described relatively lower electrode and the upper electrode that disposes;
High frequency electric source to one of described at least lower electrode and described upper electrode supply high frequency electric power, produces plasma between described lower electrode and described upper electrode; With
The impedance with respect to the circuit that is present in electrode one side at least one high frequency frequency in the described container handling, that see from described plasma is adjusted, so that described circuit does not resonate in the electrical characteristic adjustment part.
2. plasma processing apparatus as claimed in claim 1 is characterized in that:
The impedance in the circuit of counter electrode one side relative with the supply electrode of supplying with described High frequency power can be adjusted in described electrical characteristic adjustment part.
3. plasma processing apparatus as claimed in claim 1 is characterized in that:
Described electrical characteristic adjustment part has the variable element that is used to change described impedance.
4. plasma processing apparatus as claimed in claim 3 is characterized in that:
Described electrical characteristic adjustment part has the described variable element of adjustment and comes the control part of control group.
5. plasma processing apparatus as claimed in claim 4 is characterized in that:
Described electrical characteristic adjustment part has the impedance detection portion of detecting described impedance.
6. plasma processing apparatus as claimed in claim 5 is characterized in that:
Described control part is according to adjusting described variable element and come control group from the testing result of described impedance detection portion.
7. plasma processing apparatus as claimed in claim 1 is characterized in that:
Described electrical characteristic adjustment part has the electrical characteristic adjusting mechanism that is connected electrode one side that is adjusted impedance, from the electrode surface in the face of described plasma the reactance the circuit of electrical characteristic adjusting mechanism one side is adjusted into negative value.
8. plasma processing apparatus as claimed in claim 1 is characterized in that:
Described electrical characteristic adjustment part is adjusted, and described impedance is staggered with interior at ± 10 Ω from resonance point.
9. plasma processing apparatus as claimed in claim 7 is characterized in that:
Negative value below-50 Ω is adjusted to described reactance in described electrical characteristic adjustment part.
10. plasma processing apparatus as claimed in claim 1 is characterized in that:
Described upper electrode is divided into a plurality of electrode part,
Described electrical characteristic adjustment part is provided with respect at least one electrode part.
11. plasma processing apparatus as claimed in claim 1 is characterized in that:
Has the DC power supply that applies direct voltage to described electrode.
12. plasma processing apparatus as claimed in claim 11 is characterized in that:
Described electrode is described upper electrode.
13. a plasma processing apparatus that uses plasma to come treatment substrate is characterized in that, comprising:
Accommodate the container handling that substrate is handled;
The lower electrode of mounting substrate in described container handling;
In described container handling, described relatively lower electrode and the upper electrode that disposes;
High frequency electric source to one of described at least lower electrode and described upper electrode supply high frequency electric power, produces plasma between described lower electrode and described upper electrode; With
The electrical characteristic of the circuit of described electrode one side of seeing from described plasma is adjusted in the electrical characteristic adjustment part, does not reach maximum so that flow into the current value of the electric current of electrode from described processing space.
14. plasma processing apparatus as claimed in claim 13 is characterized in that:
The electrical characteristic in the circuit of counter electrode one side relative with the supply electrode of supplying with described High frequency power can be adjusted in described electrical characteristic adjustment part.
15. plasma processing apparatus as claimed in claim 13 is characterized in that:
Described electrical characteristic adjustment part has the variable element that is used to change described current value.
16. plasma processing apparatus as claimed in claim 15 is characterized in that:
Described electrical characteristic adjustment part has the described variable element of adjustment and comes the control part of Control current value.
17. plasma processing apparatus as claimed in claim 16 is characterized in that:
Described electrical characteristic adjustment part has the current value test section that detects described current value.
18. plasma processing apparatus as claimed in claim 17 is characterized in that:
Described control part is according to adjusting described variable element and come the Control current value from the testing result of described current value test section.
19. plasma processing apparatus as claimed in claim 13 is characterized in that:
Described electrical characteristic is adjusted in described electrical characteristic adjustment part, makes described current value reach more than 1/2 of lowest high-current value.
20. plasma processing apparatus as claimed in claim 13 is characterized in that:
Described upper electrode is divided into a plurality of electrode part,
Described electrical characteristic adjustment part is provided with respect to an electrode part at least.
21. plasma processing apparatus as claimed in claim 13 is characterized in that:
Has the DC power supply that applies direct voltage to described electrode.
22. plasma processing apparatus as claimed in claim 18 is characterized in that:
Described electrode is a upper electrode.
23. a method of plasma processing is characterized in that:
In container handling, on the lower electrode that substrate-placing is disposed in relative upper electrode, to one of described at least lower electrode and upper electrode supply high frequency electric power, between described lower electrode and described upper electrode, produce plasma, come treatment substrate by this plasma, wherein
Adjustment does not resonate described circuit with respect to the impedance the circuit that is present in electrode one side at least one high frequency frequency in the described container handling, that see from described plasma.
24. method of plasma processing as claimed in claim 23 is characterized in that:
Impedance in the circuit of counter electrode one side that adjustment is relative with the supply electrode of supplying with described High frequency power is not resonated this circuit.
25. method of plasma processing as claimed in claim 23 is characterized in that:
Adjust, described impedance is staggered with interior at ± 10 Ω from resonance point.
26. method of plasma processing as claimed in claim 23 is characterized in that:
Has the DC power supply that applies direct voltage to described electrode.
27. method of plasma processing as claimed in claim 26 is characterized in that:
Described electrode is a upper electrode.
28. a method of plasma processing is characterized in that:
In container handling, on the lower electrode that substrate-placing is disposed in relative upper electrode, to one of described at least lower electrode and upper electrode supply high frequency electric power, between described lower electrode and described upper electrode, produce plasma, come treatment substrate by this plasma, wherein
The electrical characteristic of the circuit of described electrode one side that adjustment is seen from described plasma makes the current value that flows into the electric current of electrode one side from described processing space not reach maximum.
29. method of plasma processing as claimed in claim 28 is characterized in that:
Adjust the electrical characteristic in the circuit of described counter electrode one side, make the current value of the electric current that flows into counter electrode one side relative not reach maximum with the supply electrode of supplying with described High frequency power.
30. method of plasma processing as claimed in claim 28 is characterized in that:
Adjust described electrical characteristic, make described current value reach more than 1/2 of lowest high-current value.
31. method of plasma processing as claimed in claim 28 is characterized in that:
Apply direct voltage to described electrode.
32. method of plasma processing as claimed in claim 31 is characterized in that:
Described electrode is a upper electrode.
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| WO2009086782A1 (en) * | 2008-01-04 | 2009-07-16 | Beijing Nmc Co., Ltd. | A plasma processing apparatus |
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| CN102184830B (en) | 2012-07-25 |
| JP2011082180A (en) | 2011-04-21 |
| CN102184830A (en) | 2011-09-14 |
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