CN101740303A - plasma processing apparatus - Google Patents

plasma processing apparatus Download PDF

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Publication number
CN101740303A
CN101740303A CN200910208723A CN200910208723A CN101740303A CN 101740303 A CN101740303 A CN 101740303A CN 200910208723 A CN200910208723 A CN 200910208723A CN 200910208723 A CN200910208723 A CN 200910208723A CN 101740303 A CN101740303 A CN 101740303A
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China
Prior art keywords
antenna
antenna element
sections
high frequency
plasma
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Granted
Application number
CN200910208723A
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Chinese (zh)
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CN101740303B (en
Inventor
齐藤均
佐藤亮
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a plasma processing apparatus which is capable of performing inner-surface high-homogeneity plasma treatment to an object to be processed. An antenna (5) is positioned opposing to a an object stage (27) which is isolated from the antenna by an dielectric window component (3). The antenna (5) consists of a plurality of straight line type antenna components (51) that have a same length and are arranged transversally in parallel. One end side of the antenna (5) is connected to a high frequency power supply part (6) through a power supply side circuit (61), and the other end side is connected to an earth point through an earth side circuit (62). At least one of the power supply side circuit (61) and the earth side circuit (62) is provided with a capacitor (7) for adjusting electric potential distribution of the antenna (5), and electric impedances in all high-frequency paths from the high frequency power supply part (6) to the earth point through the antenna components (51) are equal.

Description

Plasma processing apparatus
Technical field
The present invention relates to for example FPD (flat-panel monitor) is made the technology of the plasma treatment that the handled object etc. of the glass substrate etc. of usefulness stipulates.
Background technology
In the manufacturing process of FPD, there is the operation of plasma treatment of the handled object of LCD (LCD) substrate etc. being implemented the regulation of etch processes, film forming processing etc.As the plasma processing apparatus that carries out these operations, for example utilize the plasma processing apparatus of inductively coupled plasma (ICP), receive publicity owing to generating highdensity plasma.This inductive couple plasma processing device for example can constitute according to mode as described below: by dielectric members container handling is divided up and down, thereunder the processing space of side is provided with the mounting table of substrate, and spatial configuration high frequency (RF) antenna of side above it, by to this antenna supply high frequency electric power, in above-mentioned processing space, form inductively coupled plasma, to be supplied to the processing gaseous plasmaization in this processing space thus, thus the plasma treatment of stipulating.
As the antenna that in such inductive couple plasma processing device, uses, use antenna line plane earth to be rolled into the helical antenna of ring-type usually.And for large-scale handled object, it is big that the impedance of antenna becomes, and therefore carries out a plurality of helical antennas are used in combination.But the more and more large-scale change of the glass substrate that the FPD substrate is used, so the helical antenna of each root is also elongated, institute is so that impedance increases, and correspondingly high-frequency current reduces therewith, might can't obtain highdensity plasma.
Therefore, for impedance is reduced, exist to increase the branches of antenna, the method that makes each root helical antenna shorten, insert capacitor at the terminal or the pars intermedia of antenna, but the structure complicated of antenna in this case, it is difficult that operation becomes, and the adjustment operation of the antenna current potential on the face direction of handled object also becomes miscellaneous, consequently, has the problem that is difficult to obtain the higher plasma of uniformity.
Therefore inventors of the present invention for dwi hastasana being become the length that rectilinear form shortens antenna, make the structure of impedance reduction study thus.But when the antenna that is to use rectilinear form constitutes large-scale antenna, need to arrange a plurality of antennas, this situation for example as shown in figure 27, just the antenna 11 of a plurality of same length is being separated being spaced of regulation in parallel to each other, two ends and lead 12 with each antenna 11,13 connect, one side's lead 12 is connected with the high frequency electric source portion 14 that possesses high frequency electric source and adaptation, and in the structure with the opposing party's lead 13 ground connection, because from supply terminals through each antenna 11 to the impedance in the path of earth point in 11 differences of each antenna, the varying in size of electric current of circulation in each antenna 11 is difficult to produce the higher plasma of uniformity with respect to the face direction of handled object.
On the other hand, in patent documentation 1, record, generate in the device of inductively coupled plasma, possess the structure of the planar coil 34 that the metallic conductor element 51～58 with 8 linearities disposes in parallel to each other at the antenna that uses rectilinear form.In these elements 51～58, two elements 54,55 of central authorities, being set to branchs, to be clipped to the electrical length of the terminal 62,64 that is connected with cable 67,72 equal.
But in this device,, become greatly via the variation of element 51～58, consequently in the face of planar coil 34, can not obtain uniform impedance to the electrical length in the path of cable 72 from cable 67 along with towards the outside of planar coil 34.In this external this device, for example on one side being that the LCD of planar rectangular structure of 75cm * 85cm size is treated to purpose to having, length with above-mentioned each conductor element 51～58, be set at from about 1/16 of the wavelength (22.53m) of the sensed frequency (13.56MHz) of high frequency source 38, be about 1.41m, make the change of the electric current of each conductor element 51～58 and voltage constant big thus.
But substrate has the trend of more and more large-scale change in recent years, situation about handling for the bigger glass substrate about 2m is on one side also arranged, length for the metallic conductor element 51～58 of patent documentation 1 is difficult to carry out the higher plasma treatment of uniformity with respect to big like this glass substrate.In addition, if metallic conductor element 51～58 is risen to more than the 2m, then impedance increases, and therefore, it also is difficult solving problem of the present invention on the one hand from this.
Patent documentation 1: special table 2001-511945 communique (Fig. 2)
Summary of the invention
The present invention finishes in view of above-mentioned situation, its objective is to be provided at utilizes antenna that inductively coupled plasma is generated, handled object is carried out in the device of plasma treatment, the increase of impedance that can suppressing antenna, and adjust the Electric Field Distribution of the face direction of handled object, can adjust the plasma processing apparatus of plasma density distribution thus.
So plasma processing apparatus of the present invention, it makes and is produced induction field for having in the container handling of handling gas, with the processing gaseous plasmaization and to being carried out plasma treatment by the handled object of the mounting table of mounting in container handling, this plasma processing unit is characterised in that, comprising:
Antenna, it to be being set at outside this processing atmosphere across handling the atmosphere mode relative with above-mentioned mounting table, and comprise each equal in length, mutual laterally being arranged in parallel and the antenna element of a plurality of linearities of constituting;
Be used for High frequency power is supplied to the high frequency electric source portion of above-mentioned antenna;
Be used for the mains side circuit that the distolateral and above-mentioned high frequency electric source portion with above-mentioned antenna is connected;
Be used for another distolateral ground connection lateral circuit that is connected with earth point with above-mentioned antenna; With
The capacitor of Potential distribution adjustment usefulness, it is set at least one side of above-mentioned mains side circuit and ground connection lateral circuit and is used for the Potential distribution of antenna is adjusted,
Be set to mutually by each antenna element to the impedance in each high frequency path of earth point from above-mentioned high frequency electric source portion and equate.
In addition, plasma processing apparatus of the present invention, it makes and is produced induction field for having in the container handling of handling gas, with the processing gaseous plasmaization and to being carried out plasma treatment by the handled object of the mounting table of mounting in container handling, this plasma processing unit is characterised in that, comprising:
Antenna, it to be being set at outside this processing atmosphere across handling the atmosphere mode relative with above-mentioned mounting table, and comprise each equal in length, mutual laterally being arranged in parallel and the antenna element of a plurality of linearities of constituting;
Be used for High frequency power is supplied to the high frequency electric source portion of above-mentioned antenna;
Be used for the mains side circuit that the distolateral and above-mentioned high frequency electric source portion with above-mentioned antenna is connected;
Be used for another distolateral ground connection lateral circuit that is connected with earth point with above-mentioned antenna;
The capacitor of Potential distribution adjustment usefulness, it is set at least one side of above-mentioned mains side circuit and ground connection lateral circuit and is used for the Potential distribution of antenna is adjusted; With
The capacitor of impedance adjustment usefulness, it is set at least one side of above-mentioned mains side circuit and ground connection lateral circuit and is used for adjusting to the impedance in the high frequency path of above-mentioned earth point by each antenna element from above-mentioned high frequency electric source portion.
Also can constitute antenna element interval each other can freely adjust, also for example one of above-mentioned antenna element distolateral and another is distolateral in this case, is connected with the moving part that moves freely in the orientation of antenna element.
In addition, also for example the antenna element of a plurality of linearities of each equal in length forms the adjacent and sections that is formed by connecting parallel with one another mutually, this sections is configured with a plurality of, at this, preferred disposition has the above-mentioned sections of even number, and above-mentioned mains side circuit and ground connection lateral circuit are according to the equal mode of the physical length in above-mentioned high frequency path between each sections, with mutually adjacent sections line each other, and step-like ground distribution is the line chart shape of the combination that determines circuit.Further, preferably in any one sections the arrangement pitch of above-mentioned antenna element all equate.
In addition, further, also can comprise by above-mentioned antenna: a plurality of antenna elements are spaced a plurality of compact parts zone that forms with first mutually; Be arranged on these compact part zones each other and a plurality of antenna elements mutually to be spaced the part of rarefaction zone that forms than first at interval bigger second.At this, above-mentioned first at interval can be the interval of the antenna element that constitutes above-mentioned sections, and above-mentioned second can be adjacent sections interval each other mutually at interval.Constituting above-mentioned sections interval each other can freely adjust.In addition, above-mentioned sections one distolateral and another is distolateral is connected with the moving part that for example moves freely in the orientation of above-mentioned sections.
In addition, further, also can constitute to possess and be used to delimit above-mentioned processing atmosphere and be arranged on dielectric window parts between above-mentioned mounting table and the antenna, these dielectric window parts comprise: a plurality of tabular electricity Jie property parts that are provided with in the mode relative with above-mentioned mounting table; Support this electricity Jie property parts with being used to, along the length direction of above-mentioned electric Jie's property parts, a plurality of separating parts that are provided with in mode with above-mentioned antenna element quadrature.
At this, preferably be formed with the processing gas compartment, and, be formed with the gas supply hole that is used for handling gas to be supplied to above-mentioned container handling and being communicated with above-mentioned processing gas compartment at the lower surface of separating part in the inside of above-mentioned separating part.In addition, preferred above-mentioned a plurality of separating parts are provided with in the mode that is suspended from the top of above-mentioned container handling by hanger bearing portion respectively, and the inside in this hanger bearing portion is formed with the circulation flow path of the processing gas that is communicated with the processing gas compartment of above-mentioned spacing frame portion.Further, the capacitor of above-mentioned Potential distribution adjustment usefulness, the adjustment that is used to carry out impedance makes the current potential of the length direction central part of above-mentioned antenna element become zero.
According to the present invention, using antenna to generate inductively coupled plasma, handled object is carried out in the device of plasma treatment, the antenna element that the length of linearity is identical is arranged and is constituted antenna, the increase of impedance that therefore can the suppressing antenna parts can generate highdensity plasma.In addition, according to a first aspect of the present invention, be set to mutually by each antenna element to the impedance in each high frequency path of earth point from high frequency electric source portion and equate, therefore the uniformity of the electric field of the face direction of handled object improves, can generate the high plasma of uniformity thus, can carry out the high plasma treatment of inner evenness handled object.
Further,,, can adjust the impedance in above-mentioned high frequency path respectively, so the degree of freedom of the adjustment of the impedance in this high frequency path improves to antenna element by the capacitor of impedance adjustment usefulness according to a second aspect of the present invention.For example, be provided with under a plurality of situations in the uniformity of the electric field of the face direction that improves handled object or at antenna element, can between the inboard of the orientation of antenna element and the outside, make the adjustment of the Electric Field Distribution that Electric Field Distribution changes, therefore, consequently, can make and handled object is carried out plasma processing uniformity improve.
Description of drawings
Fig. 1 is the longitudinal section of the plasma processing apparatus of expression an embodiment of the invention.
Fig. 2 is the approximate three-dimensional map of the part of the above-mentioned plasma processing apparatus of expression.
Fig. 3 is illustrated in antenna and the plane graph of dielectric window parts and the sectional view of dielectric window parts that is provided with in the above-mentioned plasma processing apparatus.
Fig. 4 is illustrated in antenna and the plane graph of dielectric window parts and the connection layout of circuit that is provided with in the above-mentioned plasma processing apparatus.
Fig. 5 is the current potential of expression antenna and the performance plot of the relation between the position on the high frequency path, and the performance plot of the relation between the position on expression plasma density and the high frequency path.
Fig. 6 is the current potential of expression antenna and the performance plot of the relation between the position on the high frequency path, and the performance plot of the relation between the position on expression plasma density and the high frequency path.
Fig. 7 is the performance plot that changes the time of the current potential of expression antenna.
Fig. 8 is the performance plot of the relation of the method for arrangement of expression antenna element and plasma density.
Fig. 9 is other the plane graph of structure example of expression antenna.
Figure 10 is the plane graph of other examples of expression antenna.
Figure 11 is the stereogram of other examples of expression antenna.
Figure 12 is the stereogram of the details of the expression antenna element that constitutes above-mentioned antenna.
Figure 13 is the skeleton diagram of the circuit of the above-mentioned antenna of expression.
Figure 14 is the key diagram of the relation of expression configuration of above-mentioned antenna element and formed plasma density distribution.
Figure 15 is the key diagram of the relation of expression configuration of above-mentioned antenna element and formed plasma density distribution.
Figure 16 is the key diagram of the relation of expression configuration of above-mentioned antenna element and formed plasma density distribution.
Figure 17 is the key diagram of the relation of expression configuration of above-mentioned antenna element and formed plasma density distribution.
Figure 18 is the key diagram of the relation of expression configuration of above-mentioned antenna element and formed plasma density distribution.
Figure 19 is the stereogram of another other examples of expression antenna.
Figure 20 is the skeleton diagram of the circuit of the above-mentioned antenna of expression.
Figure 21 is the plane graph and the side view of another other examples of expression antenna.
Figure 22 is the summary construction diagram that comprises the plasma processing apparatus of above-mentioned antenna.
Figure 23 is the key diagram of an example of the scheme of the above-mentioned plasma processing apparatus of expression.
Figure 24 is the curve chart of distribution of the ashing rate of expression evaluation test.
Figure 25 is the curve chart of distribution of the ashing rate of expression evaluation test.
Figure 26 is the curve chart of distribution of the ashing rate of expression evaluation test.
Figure 27 is the plane graph of antenna element and annexation high frequency electric source portion of the existing linearity of expression.
Symbol description
2 container handlings
21 antenna chamber
22 plasmas generate the chamber
3 dielectric window parts
31 beam portions
32 dielectric members
33 outer frames
34 separating parts
4 hanger bearing portions
41 circulation flow paths
42 handle gas compartment
43 gas supply holes
5,100 antennas
51,101 antenna elements
52 sections
53 part of rarefaction zones
54 horizontal zones
6 high frequency electric source portions
61 mains side circuit
62 ground connection lateral circuits
7,71 volume-variable capacitors
131 drive divisions
140 control parts
Embodiment
Below, describe with reference to the execution mode of accompanying drawing plasma processing apparatus of the present invention.Fig. 1 is the longitudinal section of above-mentioned plasma processing apparatus, and 2 for for example constituting the airtight structure of angle tubular and the container handling that is grounded among Fig. 1.This container handling 2 by conductive material for example aluminium constitute, and its inside is divided up and down airtightly by the dielectric window parts 3 that see through high frequency, the upper side of above-mentioned dielectric window parts 3 is as antenna chamber 21, lower side generates chamber 22 as plasma and constitutes.Generate the inside of chamber 22 at above-mentioned plasma, be provided with and be used for the mounting table 27 of mounting as the glass substrate G of substrate.As above-mentioned glass substrate G, use FPD for example to make the glass substrate of forming on one side of usefulness as the rectangular-shaped angle type of 2m.
Above-mentioned mounting table 27, the perimeter sides of its side perimembranous and bottom is surrounded by insulating element 28, by this insulating element 28 to be supported with respect to the insulated state of the diapire of container handling 2.In addition mounting table 27 be connected with possessing biasing with the biasing of high frequency electric source and adaptation with high frequency electric source portion 29, the High frequency power that above-mentioned biasing is used for this mounting table 27 is supplied with the biasing usefulness with high frequency electric source for example frequency is the High frequency power of 3.2MHz.In addition in mounting table 27, be built-in be used for and outside conveyance unit between carry out the handing-over of glass substrate G not shown lifter pin.
Above-mentioned dielectric window parts 3 are in order to delimit processing atmosphere, to constitute the mode that plasma generates the top of chamber 22, with the roughly plate body that above-mentioned mounting table 27 is oppositely arranged, for example possess beam portion 31 that the metal material by aluminium etc. constitutes and its sidepiece by the tabular dielectric members 32 of these beam portion 31 supportings.Above-mentioned dielectric members 32 is by for example quartzy, aluminium oxide (Al 2O 3) formations such as pottery that wait.In addition, when glass substrate G was carried out plasma treatment, plasma generated chamber 22 pressure inside and is set to vacuum state, owing to require the intensity of regulation, its thickness setting is for for example about about 30mm.
Shown in the plane graph of the approximate three-dimensional map of Fig. 2 and Fig. 3, above-mentioned beam portion 31 possesses: from the sidewall outer frame 33 that protrude to inside, that constitute the bottom of antenna chamber 21 of container handling 2; With in the inboard of this outer frame 33, extend in parallel to each other with Y direction among the figure many 4 separating parts 34 for example.Form 5 cut zone parallel in the inboard of outer frame 33 by this separating part 34 with above-mentioned Y direction, these cut zone separately in dispose above-mentioned dielectric members 32.As shown in Figure 1, for example be formed with the stage portion 35 that is used for support dielectric parts 32 at outer frame 33 and separating part 34, and also be formed with the stage portion 36 that engages with this stage portion 35 at above-mentioned dielectric members 32, embedding in beam portion 31 has dielectric members 32, constitutes dielectric window parts 3.
Such dielectric window parts 3 are in the state that is suspended by the top along hanger bearing portion 4 that the Z direction is extended from container handling 2 among Fig. 1, and the mode that becomes level according to these dielectric window parts 3 is arranged at container handling 2 with it.The inside of above-mentioned hanger bearing portion 4 is formed with the circulation flow path 41 of handling gas, the distolateral upper surface that is connected in separating part 34 of one, another distolateral top 20 that is connected in container handling 2.
In addition, shown in the A-A ' sectional view of the dielectric window parts 3 of Fig. 3 (b), in the inside of separating part 34 along its length direction (Y direction among the figure), the mode that is communicated with the circulation flow path 41 with above-mentioned hanger bearing portion 4 is formed with handles gas compartment 42, and at a plurality of gas supply holes 43 of the lower surface of separating part 34 along its length direction and separate predetermined distance ground and run through setting.
Further, at the top 20 of container handling 2, the mode that is communicated with the circulation flow path 41 with above-mentioned hanger bearing portion 4 is formed with gas flow path 44, is connected with treating-gas supply system 45 at this gas flow path 44.This treating-gas supply system 45 possesses gas supply passageway 45a, the flow adjustment part 45b that is connected with gas flow path 44 and handles gas supply source 45c.Such dielectric window parts 3, be also used as and be supplied to plasma and generate gas feed unit in the chamber 22 handling gas, be supplied to the processing gas of separating part 34 from treating-gas supply system 45 through hanger bearing portion 4, be supplied to plasma through the gas supply hole 43 of the lower surface of separating part 34 and generate in the chamber 22.
In the above-mentioned antenna chamber 21 that forms by dielectric window parts 3 like this, near dielectric window parts 3, be provided with the antenna 5 that the antenna element 51 of linearity is arranged by plane earth in the mode relative with this dielectric window parts 3.This antenna 5 is that a plurality of sections 52 horizontal configured in parallel are constituted, and above-mentioned sections 52 is that the antenna element 51 with a plurality of linearities of each equal in length laterally is arranged in parallel and connection parallel with one another and constituting mutually.In this example, above-mentioned antenna element 51 is arranged to extend ground with the mode of separating part 34 quadratures of dielectric window parts 3 along directions X among the figure.In addition in the accompanying drawings, for fear of illustrated confusion, antenna element 51 is represented with a black line.
This routine sections 52 constitutes according to mode as described below: same diameter and physical length are equated many for example 4 antenna element 51 laterally arrange abreast and equally spaced mutually, the both end sides of its length direction (directions X) is connected by the antenna element 50 that extends along Y direction among the figure respectively, and each antenna element 51 is connected in parallel mutually.
And in antenna 5, dispose even number sections 52, be provided with 2 in this embodiment nIndividual for example is 2 2Individual (4) sections 52.(52A～52D) arrange in the following manner: the antenna element 51 of adjacent sections 52 is provided with these sections 52 each other in parallel to each other mutually, and compare with the antenna element 51 interval L1 each other that constitutes a sections 52, adjacent mutually sections 52 interval L2 each other is bigger.
Thus, in the antenna 5, a plurality of antenna elements 51 each other with the first compact part zone 52 (sections 52) that is closely aligned at interval and a plurality of antenna element 51 each other with the second spaced part of rarefaction zone 53 (adjacent mutually sections 52 each other), alternately be set up along above-mentioned Y direction.And the hanger bearing portion 4 of above-mentioned dielectric window parts 3, in the modes of not interfering mutually with a plurality of antenna elements that are arranged 51, be arranged at above-mentioned adjacent mutually sections 52 each other, above-mentioned part of rarefaction zone 53.
As shown in Figure 2, such sections 52 possesses the horizontal zone 54 that relatively extends along above-mentioned directions X with mounting table 27, two exterior lateral area 55 of the above-mentioned horizontal zone 54 on the length direction of sections 52 (above-mentioned directions X), promptly the both ends of the length direction of sections 52 are to upper side separately, for example vertically erect.As Fig. 1～shown in Figure 3, the horizontal zone 54 of above-mentioned sections 52 is set at the size of the length of the directions X that covers the glass substrate G of mounting on mounting table 27.In addition, sections 52 spreads all over all being arranged of container handling 2 in the mode of the length of the Y direction of cover glass substrate G.In this embodiment, generate the central part of length of the directions X of chamber 22 according to plasma, consistent with mounting in the central part of the length of the directions X of the glass substrate G of mounting table 27, and, set size separately that plasma generates chamber 22, mounting table 27, sections 52, the position is set with the consistent mode of central part of the length direction of the above-mentioned horizontal zone 54 of above-mentioned sections 52.
Such antenna 5 one distolateral, generate the high frequency electric source portion 6 that plasma with high frequency electric source and adaptation generates usefulness and be connected with possessing plasma by mains side circuit 61, above-mentioned plasma generation with high frequency electric source be used for inductively coupled plasma generate the High frequency power of usefulness, the High frequency power that for example frequency is 13.56MHz is supplied to above-mentioned antenna 5.At this, as Fig. 2 and shown in Figure 4, above-mentioned mains side circuit 61 is from being set according to the mode that all equates at each sections 52 with the connecting portion of each sections 52 electrical length to the path of above-mentioned high frequency electric source portion 6.At this, electrical length equates to be meant that the impedance of the circuit 61 of the connecting portion from high frequency electric source portion 6 to each sections 52 equates, beyond the situation that the physical length of dividing circuit 61 equates, even also comprise the physical length difference but the sectional area difference of circuit 61, the situation that the impedance of the circuit 61 of result from high frequency electric source portion 6 to above-mentioned connecting portion equates comprises also that perhaps the element that will adjust impedance as described later is also contained in interior and situation that impedance is equated.
In this embodiment, mains side circuit 61 is to be set from the mode that equates with the connecting portion of each sections 52 to the physical length of above-mentioned high frequency electric source portion 6.Particularly, describe with reference to Fig. 2 and Fig. 4, mains side circuit 61 constitutes: from a distolateral beginning of the orientation (Y direction the figure) of antenna element 51, adjacent mutually sections 52A, 52B connect by first section circuit 61a, then adjacent mutually sections 52C, 52D connect by first section circuit 61b, and the intermediate point of these first section circuit 61a, 61b connects by second section circuit 61c each other, and the intermediate point of this second section circuit 61c is connected by terminating circuit 61d with high frequency electric source portion 6.
In addition, another of antenna 5 is distolateral, is grounded connection by ground connection lateral circuit 62, and is provided with the capacitor volume variable capacitor 7 that constitutes Potential distribution adjustment usefulness between antenna 5 and the earth point.As Fig. 2 and shown in Figure 4, above-mentioned ground connection lateral circuit 62 is according to from being set with respect to the mode that each sections 52 equates with the connecting portion of each sections 52 electrical length to above-mentioned volume-variable capacitor 7.In this embodiment, ground connection lateral circuit 62 is according to from being set to the mode that the physical length of above-mentioned volume-variable capacitor 7 equates with the connecting portion of each sections 52.
That is to say, as shown in Fig. 2 and Fig. 4, ground connection lateral circuit 62 constitutes: from a distolateral beginning of the orientation (Y direction the figure) of antenna element 51, adjacent mutually sections 52A, 52B connect by first section circuit 62a, then adjacent mutually sections 52C, 52D connect by first section circuit 62b, and the intermediate point of these first section circuit 62a, 62b connects by second section circuit 62c each other, and the intermediate point of this second section circuit 62c is connected by circuit 62d with above-mentioned volume-variable capacitor 7.And since equal to the physical length of volume-variable capacitor 7, therefore link each sections 52 and also equate with the physical length of the circuit 62 of above-mentioned earth point.So in this embodiment, the physical length unanimity from above-mentioned high frequency electric source portion 6 to the high frequency path of above-mentioned earth point of each sections 52A～52D makes the electrical length (impedance) in above-mentioned high frequency path be set in the mode that equates mutually thus.Above-mentioned high frequency path, the downstream that at length is meant the adaptation from the high frequency electric source portion 6 of plasma generation usefulness is by each sections, to the path of above-mentioned earth point.
At this, as shown in Figure 2, mains side circuit 61a～61c and ground connection lateral circuit 62a～62c comprise the circuit of level and the circuit that erects, when showing simply, with mutually adjacent sections 52 line each other, step-like ground distribution is the line chart shape of the combination (combination of circuit) of decision match (tournament), makes that the electrical length in above-mentioned high frequency path equates between each sections 52.
Above-mentioned volume-variable capacitor 7 is arranged between the junction of two streams and earth point of each ground connection lateral circuit 62 of terminating circuit 62d, is used for by adjusting its capacity the impedance of antenna 5 being adjusted, and adjusts the Potential distribution of the length direction of antenna 5 thus.Use Fig. 5～Fig. 7 to describe at the adjustment of this Potential distribution.Fig. 5 (a) is the structure chart that is not provided with under the situation of volume-variable capacitor 7, and in this case, the Potential distribution of the length direction (directions X among the figure) of certain antenna 5 constantly is dull the rising shown in Fig. 5 (b).
With respect to this, when volume-variable capacitor 7 is set, the time of the current potential of the position P2 of the position P1 of the outlet side of the high frequency electric source portion 6 among Fig. 6 (a) and the entrance side of volume-variable capacitor 7 changes, become the state of per 90 ° of phase deviations mutually as shown in Figure 7, so the current potential V of certain moment on the length direction of antenna 5 pThe distribution of (spike potential of high frequency) becomes shown in Fig. 6 (b).That is, for negative, therefore the Potential distribution from position P1 to position P2 on the way has zero point corresponding to the current potential of the capacity position P2 of volume-variable capacitor 7.Thereby by the capacity of volume-variable capacitor 7 is adjusted, can be with current potential V on the length direction of antenna 5 pDead-center position freely set, adjust according to the mode of the middle position P3 of the length direction that is positioned at antenna 5 zero point in this embodiment.Thus, adjust, can control the plasma density of the length direction of antenna by Potential distribution to the length direction of antenna 5.
Return the explanation of Fig. 1, at container handling 2, its side perisporium is provided with and is used for glass substrate G is moved into the peristome 23 of taking out of with respect to the plasma generation chamber 22 of container handling 2, this peristome 23 is by gate valve 24 freely openables, and be connected with exhaust channel 25 in the bottom of container handling 2, another of this exhaust channel 25 is distolateral to be connected with the vacuum pump 26 that constitutes the vacuum exhaust unit by air displacement adjustment part 26a.And this plasma processing unit, constitute in the mode of controlling by control part.This control part for example is made of computer, possesses CPU, program, memory.According to control signal is sent to each one of plasma processing apparatus from control part, the mode that the plasma treatment of regulation is carried out has been enrolled order (each step) in said procedure.This program is stored in computer-readable storage medium for example in the storage part of floppy disc, mini disc, hard disk, MO (photomagneto disk) etc., is installed on control part.
Then the effect to above-mentioned execution mode describes.At first open gate valve 24 by not shown outside conveyance unit, from peristome 23 with glass substrate G move into generate chamber 22 to plasma in, and by not shown lifter pin mounting on mounting table 27.Then will handle gas and be supplied in the plasma generation chamber 22, and utilize vacuum pump 26 that plasma is generated chamber 22 interior vacuum exhausts to the specified vacuum degree by exhaust channel 25 on the other hand from treating-gas supply system 45.In addition, antenna chamber 21 is set to air atmosphere.
Then will for example be supplied to antenna 5 for the High frequency power of 13.56MHz from high frequency electric source portion 6.Produce induction field thus around antenna 5, the processing gas in the container handling 2 is generated plasma by the energy of this electric field by plasmaization (activation).With high frequency electric source portion 29 for example High frequency power of 3.2MHz is supplied to mounting table 27 from biasing then, the ion in the plasma is introduced into mounting table 27 sides thus, and glass substrate G is carried out etch processes.
At this, state as mentioned, 4 sections 52 that constitute by antenna element 51, we can say according to the mode of the line chart of decision match combination (circuit combination) by interconnection line mutually with respect to the feed point of High frequency power and earth point, the impedance in the high frequency path corresponding with each sections 52 equates, during therefore from Y direction (orientation of antenna 5) observation container handling 2, the current potential of each sections 52 becomes idiostatic.Sections 52 has the antenna element 51 of a plurality of linearities, has 4 antenna elements 51 in this embodiment, and when observing in detail, 2 antenna elements 51 in the outside are different in sections 52 with the length in the path of inboard 2 antenna elements 51.Therefore for each sections 52, when not being idiostatic when above-mentioned orientation is observed, there is small Potential distribution, the pattern of this Potential distribution is consistent between each sections 52.
But when if to make the arrangement pitch of antenna element 51 spread all over antenna 5 all be same, plasma density becomes the chevron that central authorities are high, two ends are low and distributes as shown in Fig. 8 (b).That is, in whole antenna elements 51, become in the lower side plasma density of the antenna element 51 that is arranged at central portion the highest, along with the plasma density distribution that reduces gradually of plasma density toward the outer side from here.Therefore in antenna 5 was all, it is big that the difference of height of plasma density becomes, and the inner evenness of plasma density reduces.
To this in the present embodiment, because adjacent mutually sections 52 interval L2 each other is wideer than the antenna element 51 interval L1 each other in the sections 52, compact part zone 52 and part of rarefaction zone 53 are alternately formed, therefore shown in Fig. 8 (a), therefore the density of plasma all forms the distribution of chevron in each sections 52, the uniformity along the plasma density distribution of the face direction of handled object becomes higher.That is, in compact part zone 52, become big in the position plasma density corresponding, but the variation of plasma density is less with the antenna element 51 of central authorities.And because compact part zone 52 and part of rarefaction zone 53 are alternately arranged in above-mentioned orientation, so the less plasma of variable density forms the consequently inner evenness of plasma density raising continuously in above-mentioned orientation.
And when the length direction of antenna 5 was observed, as shown in above-mentioned Fig. 6 (b), the current potential of the central part of the length direction of antenna element 51 was zero, and Potential distribution is with respect to becoming left-right symmetric this zero point.Peripheral capacitive coupling at antenna element 51 becomes how the induction coupling is less in this case, and Potential distribution becomes left-right symmetric with respect to the central part of the length direction of antenna element 51, therefore plasma density distribution is shown in Fig. 6 (c), and the result is that the plasma density of central authorities uprises the distribution that becomes chevron.
With respect to this, in the structure that capacitor is not set, shown in Fig. 5 (c), become current potential V pThe plasma density of lower earth point side is higher, the lower distribution of plasma density of high frequency electric source portion 6 sides, the plasma density of side's side of length direction that becomes antenna element 51 is higher, the state that the plasma density of the opposing party's side is lower, so uniformity reduces.
According to foregoing, in container handling 2, no matter about directions X (length direction of antenna element 51), still about Y direction (orientation of antenna element 51), uniformity along the Potential distribution of the face direction (in X, the Y plane) of handled object is higher, so the uniformity of electric field improves.Therefore the inner evenness of plasma density uprises, and can carry out in the higher plasma treatment of the inner evenness of handled object.
In such plasma processing apparatus,,, can reduce impedance so compare the length weak point that can make antenna element 51 with helical antenna owing to use the antenna element 51 of linearity to constitute antenna 5.Therefore compare with the situation of using helical antenna, easily the suppressing antenna current potential.
In addition, state as mentioned, by: the impedance unanimity that makes each sections 52; Use the current potential V of volume-variable capacitor 7 according to the central part of the length direction that makes antenna element 51 pBe that zero mode is adjusted Potential distribution; Alternately form with compact part zone 52 and part of rarefaction zone 53 that the arrangement pitch of antenna element 51 is different, thereby make in container handling 2 in the orientation and length direction of antenna element 51, can produce the higher plasma of uniformity, can carry out the higher plasma treatment of inner evenness with respect to handled object.Further, by each sections 52 be we can say according to the mode of the line chart of match combination interconnection line mutually with respect to the feed point of High frequency power and earth point, thereby can make the impedance unanimity of each sections 52 with easy structure, be effective.
And, in the present invention, the separating part 34 of dielectric window parts 3 is provided with in the mode with antenna element 51 quadratures of antenna 5, therefore can suppress the faradic generation in the separating part 34, can suppress invalid decay to take place and generate chamber 22 at plasma reposefully to see through from the induction field of antenna 5.In addition, be provided with a plurality of separating parts 34 and form a plurality of cut zone, in each of this cut zone, dispose dielectric members 32, therefore can make dielectric members 32 miniaturizations that in 1 cut zone, are provided with.In addition because the beam portion that is constituted by separating part 34 and outer frame 33 on every side 31 supportings of the dielectric members 32 that has been miniaturized, therefore be equivalent to plasma with vacuum atmosphere generate chamber 22, with the antenna chamber 21 of air atmosphere between division airtightly, can guarantee full intensity.Further, to handle gas by the separating part 34 of dielectric window parts 3 and be supplied to plasma generation chamber 22, dielectric window parts 3 are also used as handles the gas feed unit, therefore the component parts of plasma processing apparatus reduces, summary that can implement device can help to reduce manufacturing cost.
Then other the structure example at antenna describes with reference to Fig. 9.Antenna 81 in the structure of Fig. 9 (a) constitutes: possess 2 nIndividual, be 2 in this embodiment 3Individual (8) 2 antenna elements 80 that extend in parallel to each other with linearity ground, same diameter and equal in length are one group sections 82.4 antenna elements 80 that constitute 2 sections 82 in this embodiment uniformly-spaced dispose with interval L1 mutually, constitute the compact part zone 82 that antenna element 80 is closely aligned, between 2 sections 82 and 2 sections 82 being adjacent, interval L2 configuration antenna element 80 with bigger than above-mentioned interval L1 constitutes the part of rarefaction zone 85 that antenna element 80 is sparsely arranged.And with each sections 82 by mains side circuit 83 and ground connection lateral circuit 84 with respect to as the feed point of the High frequency power of the output of above-mentioned high frequency electric source portion 6 and earth point, we can say according to the mode of the line chart of match combination interconnection line mutually, the physical length from above-mentioned high frequency electric source portion 6 to the path of above-mentioned earth point of each sections 82 is set to mutually equates.
In addition, the antenna 86 in the structure of Fig. 9 (b) constitutes: possess 2 nIndividual, be 2 in this embodiment 23 antenna elements 87 that individual that extend in parallel to each other with linearity ground, physical length equates are one group sections 88, and except that the quantity difference of antenna element 87, other and above-mentioned antenna 5 are same structures.
And in the present invention, as shown in figure 10, the volume-variable capacitor of impedance adjustment usefulness can be set also with circuit side at power supply.In this routine antenna 9, for example 4 sections 91A～91D arrange on the Y direction, supply side at antenna 9,2 sections 91A, the 91D in the outside connect by mains side circuit 92a each other, and be connected to high frequency electric source portion 6 by circuit 92b, between the junction of two streams and high frequency electric source portion 6 of circuit 92a and circuit 92b, be provided with the volume-variable capacitor 93A of impedance adjustment usefulness.In addition, 2 inboard sections 91B, 91C connect by mains side circuit 92a each other, and be connected to high frequency electric source portion 6 by circuit 92d, between the junction of two streams and high frequency electric source portion 6 of circuit 92c and circuit 92d, be provided with the volume-variable capacitor 93B of impedance adjustment usefulness.
On the other hand, in the ground connection side of antenna 9,2 sections 91A, the 91D in the outside connect by ground connection lateral circuit 93a each other, and are grounded by circuit 93b, between the junction of two streams and earth point of circuit 93a and circuit 93b, be provided with the capacity fixed capacitor 94A of Potential distribution adjustment usefulness.In addition, inboard 2 sections 91B, 91C are connected by ground connection lateral circuit 93c each other, and 93d is grounded by circuit, between the junction of two streams and earth point of circuit 93c and circuit 93d, is provided with the capacity fixed capacitor 94B of Potential distribution adjustment usefulness.
In this embodiment, above-mentioned volume- variable capacitor 93A, 93B are that purpose is used with the impedance in the above-mentioned high frequency path of the impedance that changes sections 91B, 91C by the inboard high frequency path till from above-mentioned high frequency electric source portion 6 to above-mentioned earth point and sections 91A, 91D by the outside.For example the capacity of volume- variable capacitor 93A, 93B is adjusted, make with the impedance phase in the above-mentioned high frequency path of passing through inboard sections 91B, 91C bigger than the impedance in the above-mentioned high frequency path of the sections 91A, the 91D that pass through the outside, make the high-frequency current that in sections 91B, the 91C of inboard, circulates more thus, can carry out sections 91A, 91D with respect to the outside and make the control that distributes in the face of the bigger plasma density of the plasma density of inboard sections 91B, 91C than the high-frequency current that in sections 91A, the 91D in the outside, circulates.
In addition, also can for example adjust volume- variable capacitor 93A, 93B, make with the impedance phase in above-mentioned high frequency path by inboard sections 91B, 91C more lessly than the impedance in the above-mentioned high frequency path of sections 91A, 91D by the outside, can adjusting thus distributes in the face of plasma makes with respect to sections 91A, the 91D in the outside and the plasma density of inboard sections 91B, 91C is less.
Utilize volume- variable capacitor 93A, 93B like this, impedance to each above-mentioned high frequency path of sections 91A, 91D by the outside and inboard sections 91B, 91C is adjusted, thereby can between the plasma that produces at plasma that sections 91B, 91C by the inboard produce, with sections 91A, 91D on the face direction of substrate, carry out the trickle control of plasma density, therefore can realize the further inching of distribution (uniformity) in the face by the outside.At this, volume- variable capacitor 93A, 93B are arranged at inboard sections 91B, 91C and the sections 91A in the outside, the both sides of 91D in this embodiment, but also can be arranged at any one party.
By the variable capacitor of impedance adjustment usefulness is set, can adjust the impedance in above-mentioned high frequency path like this, so the degree of freedom of the adjustment of the impedance in this high frequency path improves segmentedly.Can improve for example uniformity of the electric field of the face direction of glass substrate G thus, can carry out between the inboard of the orientation of sections and the outside, making the adjustment of the Electric Field Distribution that Electric Field Distribution changes, consequently can improve plasma processing uniformity handled object.
In addition, as shown in figure 10, with the mode line of sections according to the line chart of match, make a plurality of sections be connected common volume-variable capacitor, then utilize a volume-variable capacitor, can be simultaneously the impedance in the above-mentioned high frequency path of a plurality of sections be adjusted, adjust and become easier.
And the capacitor of Potential distribution adjustment usefulness also can be arranged in antenna and the mains side circuit that high frequency electric source portion is connected.And the capacitor of Potential distribution adjustment usefulness can use in capacity fixed capacitor or the volume-variable capacitor any one.
Further, antenna of the present invention also can be provided with in the mode of the inside that is embedded in the dielectric window parts.Further, also can make adjacent mutually sections interval L2 each other narrower than the interval L1 each other of the antenna element in the identical sections, form the part of rarefaction zone of the sparse arrangement of antenna element by the antenna element that constitutes sections, form the compact arranged compact part of antenna element zone by adjacent sections antenna element each other mutually.Plasma treatment of the present invention can be applicable to the ashing treatment of film forming processing, etch processes, resist film etc.
But, as the antenna that in inductive couple plasma processing device, uses, as indicated above, usually antenna line use plane earth is rolled into the helical antenna of ring-type, but under the situation of the device of handling large-scale substrate, it is big that the impedance of antenna becomes, highdensity plasma might can not be obtained, therefore in order to prevent the generation of this situation, making each antenna in each execution mode of having stated is rectilinear form, suppresses the impedance of each root antenna.But existence is difficult to the situation by the inner evenness of the arrangement pitch control and treatment substrate of the antenna element of rectilinear form.Therefore, below with reference to Figure 11 to describing with changing to arbitrarily execution mode at interval between antenna element.In this embodiment, in the antenna chamber 21 that forms by dielectric window parts 3, replace antenna 5 to be provided with antenna 100.
Antenna 100 possess with upwardly extending 2 antenna elements 101 in side of separating part 34 quadratures of dielectric window parts 3.Each antenna element 101 is set up in parallel to each other, constitutes identical shaped and equal length, and its both ends are formed with crooked upward bend 102.And, as shown in figure 12, run through to be provided with the installing hole 103 that on the length direction of antenna element 101, connects at each bending area 102b.
And, in antenna chamber 21,, be provided with tap (tap) 104a, 104b with the prolonging direction quadrature of antenna element 101 and extension flatly in the both end sides of antenna element 101.The structure of each tap 104a, 104b is identical, therefore describes at tap 104a as representative, at the prolonging direction of each tap 104a along this tap 104a, is provided with a plurality of screw holes 105 that screw togather each screw 106.
Antenna element 101, by screw 106 is screwed togather (screw thread is fixed) via the installing hole 103 of bend 102 and the screw hole 105 of tap 104a, 104b, can be installed on tap 104a, 104b freely removably thus, so by selecting screw hole 105, can carry out freely adjusting to the interval that position and each antenna element 101 are set of the Y direction of each antenna element 101 (direction vertical) with antenna element 101.
Distolateral, another distolateral mains side circuit 111, ground connection lateral circuit 112 of being connected with respectively at the antenna element 101 that is installed on tap 104a, 104b.These mains side circuit 111 and ground connection lateral circuit 112, for example with the mains side circuit 61 of Fig. 2 and ground connection lateral circuit 62 similarly, crookedly then towards the top extend towards transverse direction.
Figure 13 is the equivalent circuit diagram of antenna 100, describes 113,114 tie points of representing tie point, antenna element 101 and the ground connection lateral circuit 112 of antenna element 101 and mains side circuit 111 respectively among Figure 13 with reference to this figure.Mains side circuit 111 constitutes by first section the mains side circuit 111a that antenna element 101 is connected each other with from second section the mains side circuit 111b that the intermediate point of circuit 111a is connected to high frequency electric source portion 6.Constitute the equal in length of circuit like this, make that thus the impedance from high frequency electric source portion 6 to each tie point 113 is set to equal respectively from high frequency electric source portion 6 to each tie point 113.
In addition, mains side circuit 112 is made of by second section the mains side circuit 112b that volume-variable capacitor 7 is connected with earth point with intermediate point from circuit 112a the mains side circuit 112a that antenna element 101 is interconnective first section.Constitute equal in length like this, make impedance be set to mutually thus and equate from each tie point 114 of above-mentioned antenna element 101 and ground connection lateral circuit 112 to earth point from each tie point 114 to the circuit of earth point.Further, the impedance of each antenna element 101 is set according to the mode that equates respectively, thereby the electrical length in the high frequency path that is made of each antenna element 101 is set to mutually and equates.
In above-mentioned antenna 100, with reference to the distance of Figure 14～Figure 18 statement whenever 101 of change antenna elements, the situation that the plasma density distribution 8 that forms in plasma generation chamber 22 changes.In each figure, be added with the symbol of symbol (a) after the figure numbering, it is the example of layout of the configuration of the antenna element 101 of expression in the antenna chamber 21, the symbol of after figure numbering, represent to have (b), the plasma generation chamber 22 interior formed plasma density distribution 8 when being the layout of (a) of its phase diagram numbering of expression.In each example, antenna element 101 is symmetrically located at the centre position of the Y direction of antenna chamber 21, and the centre position of the centre position of the Y direction of glass substrate G and the Y direction of antenna chamber overlaps.In addition, the plasma density distribution 8 of each Figure 14～18 (b) is represented based on the result who has been identified in the evaluation test that is described below.
At first, the situation at the layout central portion that antenna element 101 is arranged on antenna chamber 21 with closer distance, shown in Figure 14 (a) describes.Like this, during close together that antenna element is 101,2 antenna elements 101 play a role as 1 thick antenna element, shown in Figure 14 (a) with 2 antenna elements 101 as 1 antenna element, form induced field 110 in mode with its coiling.For induced field 110 in this formation, a branch of owing to antenna element 110 being regarded as, than the induced field that forms by an antenna element 110, have the effect that can produce stronger magnetic field.
And, generate in the chamber 22 at plasma, plasma density distribution 8 forms: in antenna element 101 sides' disposed thereon central portion plasma density for the highest, along with from this central portion along antenna element 101 orientation toward the outer side plasma density reduce gradually.But chain-dotted line 80 expressions among Figure 14 (b) lack in 2 antenna elements 101, only are provided with the plasma density distribution that forms under the situation of another root.In this embodiment, as mentioned above, because 2 antenna elements 101 work as an antenna element 101, therefore above-mentioned plasma density distribution 8 becomes and the roughly the same plasma density distribution of the situation that only is provided with 1 antenna element 101 shown in this chain-dotted line.But, compare with the situation that only is provided with 1 antenna element 101, form stronger induced field as mentioned above, therefore compare with the situation that like this only is provided with 1 antenna element 101, the plasma density distribution 8 that plasma generates the central portion of chamber 22 becomes big.
Figure 15～Figure 18 represents to make antenna element 101 be separated from each other the density distribution 8 of the plasma when being provided with away from the mode of the central portion of antenna chamber 21 according to comparing with Figure 14, antenna element like this 101 distant from situation under, around each antenna element 101, form induced field 110 respectively.Chain-dotted line 80 in each Figure 15～18 (b), expression and Figure 14 (b) are similarly, formed plasma density distribution under the situation of antenna element 101 individualisms, under the situation that only is provided with an antenna element 101, shown in this chain-dotted line 80, the plasma density of below that forms antenna element 101 is higher, and along with the plasma density distribution that reduces away from plasma density to transverse direction from antenna element 101, are the synthetic and distributions that form of each formed plasma density distribution of these antenna parts 101 but in fact generate the plasma density distribution 8 that forms in the chamber 22 at plasma.
And, as these Figure 15～shown in Figure 180, with the installation site of antenna element 101 to the periphery lateral deviation of antenna chamber 21 from, interval expansion along with antenna element 101, generate formed plasma density distribution 8 in the chamber 22 about plasma, become big with the plasma density that the plasma density of central portion in generating chamber 22 reduces relative periphery.For example, be arranged among Figure 15 (a), Figure 16 (a) of closer mutually position at antenna element 101, situation during with the layout that forms Figure 14 (a) is identical, and the central portion side that plasma generates chamber 22 shown in Figure 15 (b), Figure 16 (b) is in a ratio of the high density distribution with the periphery side.The spaced far of comparing antenna element 101 in those layouts with Figure 15 (a), Figure 16 (a) from the layout of Figure 17 (a) in, generate the roughly uniform plasma density distribution 8 of formation in the chamber 22 as Figure 17 (b) plasma that is shown in, than this, in the layout of the interval of antenna element 101 Figure 18 (a) further away from each other, as Figure 18 (b) the plasma that the is shown in periphery side that generates chamber 22 compare with the central portion side and become high density and distribute.
For the antenna 100 that the interval of antenna element 101 can be changed like this, handle by the interval of adjusting 2 antenna elements 101, can control the formed plasma density distribution of each in plasma generates chamber 22.For example there are each treatment conditions of the kind according to gas, the quantity delivered of gas etc. etc., plasma generates the situation that the plasma density distribution in the chamber 22 changes, like this when changing treatment conditions in antenna 100, change the position of antenna element 101, can carry out the uniformity high processing to glass substrate G, be favourable therefore.
In addition, when constituting the structure of the position that can change antenna element,, not only be defined as 2 as the radical of antenna element 101.Figure 19 is that to make antenna element 101 be the stereogram of the antenna 120 under 4 the situation, and Figure 20 is the figure that antenna element 120 is represented with equivalent circuit diagram.For this antenna 120, observe first and 1 sections 121 of 121, the three and the 4th antenna element formation of second antenna element 101 1 sections of formation (compact part zone) from the orientation of antenna element 101.In Figure 19, Figure 20, for the identical symbolic representation of position mark that similarly constitutes with antenna 100.
Antenna element 101 is connected with high frequency electric source portion 6, is connected with earth point by ground connection lateral circuit 124 by mains side circuit 123 respectively.125 is tie points of mains side circuit 123 and each antenna element 101 among Figure 20, and 126 is tie points of ground connection lateral circuit 124 and each antenna element 101 among the figure.
Mains side circuit 123 and ground connection lateral circuit 124, with other each execution mode similarly will be mutually adjacent sections 121 each other line constitute the line chart shape of the combination of decision match.Particularly, in mains side circuit 123, the intermediate point of the circuit 123a that the antenna element 101 of identical sections 121 is the interconnective first section circuit 123b by second section each other connects, and the intermediate point of this circuit 123b of second section is connected by the 3rd section circuit 123c with high frequency electric source portion 6.So carry out distribution and make the equal in length of circuit, thereby the impedance separately of each circuit is set to equal from high frequency electric source portion 6 to each antenna element 101.
In addition, in ground connection lateral circuit 124, the intermediate point of the circuit 124a that the antenna element 101 of identical sections 121 is the interconnective first section circuit 124b by second section each other connects, and the intermediate point of this second section circuit 124b is connected by the 3rd section circuit 124c with high frequency electric source portion 6.So carry out distribution, make the equal in length of the circuit from each antenna element 101 to earth point, the impedance of each circuit is set to equal.By each circuit of formation like this, with each execution mode of having stated similarly the electrical length in each high frequency path be set to mutually and equate.
Even like this in the antenna 120 of Gou Chenging, also can freely adjust with the interval of the antenna element 101 that constitutes different mutually sections 121, therefore can control plasma and generate formed plasma density distribution in the chamber 22 interval of the antenna element 101 that constitutes same sections 121.In addition, as mentioned above by making antenna element 101 close, therefore can strengthen formed induced field and obtain high etch rates, the position of adjustment antenna element 101 between different sections 121 and in the identical sections 121 can obtain high etch rates as mentioned above.
In addition, the interval that also can form antenna element can automatically be adjusted.Figure 21 (a) (b) represents plane, the side of such antenna 130 respectively.Is that the center describes to this antenna 130 with the difference with antenna 100, and the two ends of 2 antenna elements 101 are connected with drive division 131 respectively.This drive division 131 for example constitutes and moves freely along the guide rail 132 that extends in the orientation of antenna element 101 in antenna chamber 21.The upstream side of the volume-variable capacitor 7 of mains side circuit 111 and ground connection lateral circuit 112, the mode that moves according to not hindering antenna element 101 constitutes by having flexual distribution.
Example at the structure of the control part that is provided with in the plasma processing apparatus that possesses this antenna 130 describes with reference to Figure 22.Control part 140 among the figure possesses bus 141, and bus 141 is connected with scheme incorporating section 143 with CPU142.Store a plurality of processing schemes of setting about to the flow of container handling 2 gas supplied kinds, gas etc. in the scheme incorporating section 143, these each processing schemes also comprise the setting at the interval of antenna element 101.
When for example the user utilizes the not shown selected cell that is made of keyboard etc. to carry out the selection of processing scheme, read this selecteed processing scheme from scheme housing unit 143 by CPU142.Then, from drive division 131 outputs with this processing scheme that the be read corresponding control signal of control part 140 to plasma processing apparatus.The drive division 131 that receives control signal moves according to the mode shown in the arrow among Figure 21 (a), the mode that becomes the interval that sets in this selecteed processing scheme according to the interval of antenna element 101 is controlled, follow the gas of setting in the selected processing scheme, be supplied to the flow that similarly in this processing scheme, sets, handle.
In the above-mentioned plasma processing apparatus, at substrate G continuously by conveyance to the situation of container handling 2, for example can carry out the interval of the selection control antenna parts 101 of processing scheme at every crowd of (lot) substrate G.In addition, as processing scheme, the mode that also can be as shown in figure 23 changes according to the corresponding interval that makes antenna element 101 with the time band of technology is set, and also can be in the processing of 1 substrate G, the interval of change antenna element 101 and carry out the mode of plasma treatment.
Under the situation that antenna element moves, also can install as shown in figure 10 like this and be used for capacitor that the impedance of each sections is adjusted.
(evaluation test)
The plasma processing apparatus that use possesses antenna 100 is used to investigate the evaluation test of plasma density distribution.Change the distance of 101 of antenna elements in each test respectively, the substrate G that the surface is coated with photoresist carries out plasma treatment, observes formed plasma and after processing the ashing rate of the photoresist in the orientation of antenna among the substrate G is investigated.As the treatment conditions of substrate G, the pressure that makes plasma generate in the chamber 22 is 10mTorr, and order is 2000W from the supply capability of high frequency electric source portion 6.
In antenna chamber 21, observe from the orientation of antenna element 101, when the distance of order from the central portion of substrate to the end is L, the distance that antenna element is 101, in evaluation test 1, be about 1/3L, in evaluation test 2, be about 2/3L, in evaluation test 3, be about L, in evaluation test 4, be about 4/3L, in evaluation test 5, be about 2L.Figure 14 that has illustrated in execution mode (a)～Figure 19 (a) represents the layout of the antenna element 101 of each evaluation test 1～5.As locating of the ashing rate of each substrate G, be central part, along one distolateral, the position arbitrarily that another is distolateral of Y direction (orientation of antenna element) towards substrate G from substrate G.
As observed result to the plasma in the processing of substrate G: in evaluation test 1,2, observe plasma strong at the central portion that plasma generates chamber 22, periphery a little less than.In evaluation test 3, it is stronger than periphery at the central portion that plasma generates chamber 22 to observe plasma, observes in evaluation test 4 at central portion and periphery difference uniformity height.Observe in evaluation test 5, plasma is weak, stronger at periphery at the central portion that plasma generates chamber 22.
[table 1]
Figure G200910208723XD0000221
Above-mentioned table 1 is illustrated in the evaluation test 1～5, and at the ashing rate that each one of substrate G measures, Figure 24 (a)～Figure 26 (e) is the figure with this table of graphical presentation.As locating, be 0 with the central part of substrate, get the distance expression of one distolateral, periphery that another is distolateral respectively from this central part to substrate, respectively to a distolateral distance additional+symbol, to another distolateral distance additional-symbol.This ashing rate is high more, just represents that the plasma density of its top is high more.Distribution in evaluation test 1～3 is depicted as the curve chart of the ashing rate of central portion of the substrate G convex higher than the ashing rate of periphery, and the ashing rate that the distribution in evaluation test 4 is depicted as the ashing rate of central portion of substrate G and periphery is the curve chart of planar-shaped uniformly roughly.And the curve chart that the distribution in evaluation test 5 is depicted as the ashing rate of the periphery spill higher than the ashing rate of central portion distributes.
Result according to evaluation test 1～5 represents: by the distance of 101 of control antenna parts, and the plasma density distribution that the article on plasma body generates in the chamber 22 are controlled, thus the ashing rate in can the face of control basal plate.In addition, in the nearest evaluation test 1 of 101 of antenna elements, the ashing rate of the substrate center portion of the below of this antenna element 101 is high especially, and is higher than other the ashing rate of lower side of antenna element 101 of evaluation test.This situation is represented: under the situation of antenna element 101 near configuration, the distribution that can improve its plasma density on every side obtains higher ashing rate.The ashing rate of 1～5 pair of photoresist of evaluation test is investigated, clearly also be similarly in etching, distance by 101 of control antenna parts, can article on plasma body generation chamber 22 interior plasma density distribution control, can control the etch-rate in the face of substrate.More than, at being illustrated with changing into arbitrarily execution mode at interval between antenna element, but the antenna element that also can constitute above-mentioned execution mode is replaced into the sections that a plurality of antenna elements are connected in parallel, and can will change into the structure at interval arbitrarily between these sections.

Claims (15)

1. plasma processing apparatus, it makes and is produced induction field for having in the container handling of handling gas, with the processing gaseous plasmaization and to being carried out plasma treatment by the handled object of the mounting table of mounting in container handling, this plasma processing unit is characterised in that, comprising:
Antenna, it to be being set at outside this processing atmosphere across handling the atmosphere mode relative with described mounting table, and comprise each equal in length, mutual laterally being arranged in parallel and the antenna element of a plurality of linearities of constituting;
Be used for High frequency power is supplied to the high frequency electric source portion of described antenna;
Be used for the mains side circuit that the distolateral and described high frequency electric source portion with described antenna is connected;
Be used for another distolateral ground connection lateral circuit that is connected with earth point with described antenna; With
The capacitor of Potential distribution adjustment usefulness, it is set at least one side of described mains side circuit and ground connection lateral circuit and is used for the Potential distribution of antenna is adjusted,
Be set to mutually by each antenna element to the impedance in each high frequency path of earth point from described high frequency electric source portion and equate.
2. plasma processing apparatus, it makes to supply with to have and produces induction field in the container handling of handling gas, with the processing gaseous plasmaization and to being carried out plasma treatment by the handled object of the mounting table of mounting in container handling, this plasma processing unit is characterised in that, comprising:
Antenna, it to be being set at outside this processing atmosphere across handling the atmosphere mode relative with described mounting table, and comprise each equal in length, mutual laterally being arranged in parallel and the antenna element of a plurality of linearities of constituting;
Be used for High frequency power is supplied to the high frequency electric source portion of described antenna;
Be used for the mains side circuit that the distolateral and described high frequency electric source portion with described antenna is connected;
Be used for another distolateral ground connection lateral circuit that is connected with earth point with described antenna;
The capacitor of Potential distribution adjustment usefulness, it is set at least one side of described mains side circuit and ground connection lateral circuit and is used for the Potential distribution of antenna is adjusted; With
The capacitor of impedance adjustment usefulness, it is set at least one side of described mains side circuit and ground connection lateral circuit and is used for adjusting to the impedance in the high frequency path of described earth point by each antenna element from described high frequency electric source portion.
3. plasma processing apparatus as claimed in claim 1 or 2 is characterized in that:
Constituting antenna element interval each other can freely adjust.
4. plasma processing apparatus as claimed in claim 3 is characterized in that:
Described antenna element one distolateral and another is distolateral is connected with the moving part that moves freely in the orientation of antenna element.
5. plasma processing apparatus as claimed in claim 1 or 2 is characterized in that:
The antenna element of a plurality of linearities of each equal in length forms the adjacent and sections that is formed by connecting parallel with one another mutually, and this sections is configured with a plurality of.
6. plasma processing apparatus as claimed in claim 5 is characterized in that:
Described sections is configured with even number, described mains side circuit and ground connection lateral circuit, the mode that equates according to the physical length in described high frequency path between each sections, with adjacent mutually sections line each other, and step-like ground distribution is the line chart shape of the combination that determines circuit.
7. plasma processing apparatus as claimed in claim 5 is characterized in that:
Arrangement pitch at antenna element described in any sections all equates.
8. plasma processing apparatus as claimed in claim 5 is characterized in that:
Described antenna comprises:
A plurality of antenna elements are spaced a plurality of compact parts zone that forms with first mutually; With
Be arranged on these compact part zones each other, a plurality of antenna elements are mutually to be spaced the part of rarefaction zone that forms than first at interval bigger second.
9. plasma processing apparatus as claimed in claim 8 is characterized in that:
Described first is spaced apart the interval of the antenna element that constitutes described sections, and described second is spaced apart adjacent sections interval each other mutually.
10. plasma processing apparatus as claimed in claim 5 is characterized in that:
Constituting described sections interval each other can freely adjust.
11. plasma processing apparatus as claimed in claim 10 is characterized in that:
Described sections one distolateral and another is distolateral is connected with the moving part that moves freely in the orientation of described sections.
12. plasma processing apparatus as claimed in claim 1 or 2 is characterized in that:
Possess and be used to delimit described processing atmosphere and be arranged on dielectric window parts between described mounting table and the antenna,
These dielectric window parts comprise: a plurality of tabular electricity Jie property parts that are provided with in the mode relative with described mounting table; With
Be used to support this electricity Jie property parts, along the length direction of described electric Jie's property parts, a plurality of separating parts that are provided with in mode with described antenna element quadrature.
13. plasma processing apparatus as claimed in claim 12 is characterized in that:
Be formed with the processing gas compartment in the inside of described separating part, and, be formed with the gas supply hole that is used for handling gas to be supplied to described container handling and being communicated with described processing gas compartment at the lower surface of separating part.
14. plasma processing apparatus as claimed in claim 13 is characterized in that:
Described a plurality of separating part is provided with in the mode that is suspended from the top of described container handling by hanger bearing portion respectively, and the inside in this hanger bearing portion is formed with the circulation flow path of the processing gas that is communicated with the processing gas compartment of described spacing frame portion.
15. plasma processing apparatus as claimed in claim 1 or 2 is characterized in that:
The capacitor of described Potential distribution adjustment usefulness, the adjustment that is used to carry out impedance makes the current potential of the length direction central part of described antenna element become zero.
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KR20110074726A (en) 2011-07-01
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