TW201034521A - Plasma processing device - Google Patents

Plasma processing device Download PDF

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Publication number
TW201034521A
TW201034521A TW098137128A TW98137128A TW201034521A TW 201034521 A TW201034521 A TW 201034521A TW 098137128 A TW098137128 A TW 098137128A TW 98137128 A TW98137128 A TW 98137128A TW 201034521 A TW201034521 A TW 201034521A
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TW
Taiwan
Prior art keywords
antenna
plasma
power supply
processing apparatus
plasma processing
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Application number
TW098137128A
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Chinese (zh)
Inventor
Hitoshi Saito
Ryo Sato
Original Assignee
Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201034521A publication Critical patent/TW201034521A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The subject of this invention is to provide plasma uniformity during plasma processing. The solution is to provide an antenna (5), oppositely disposed to a mounting table (27), separaed by a dielectric window member (3). The antenna (5) is constituted by a plurality of linear antenna members (51) which are equal in length and are arranged horizontally in parallel to one another. One end side of the antenna (5) is connected to a high frequency power supply part (6) via a power supply side circuit (61), and further the other end side is connected to a grounding point via a grounding side circuit (62). At least one of the power supply side circuit (61) and the grounding side circuit (62) is provided with a potential distribution adjusting capacitor (7) for adjusting a potential distribution of the antenna (5), and the capacitor is set so that impedance of each high frequency route from the high frequency power supply part (6) to the grounding point via each antenna member (51) becomes equal.

Description

201034521 六、發明說明： 【發明所屬之技術領域】 本發明是例如對FPD ( Flat Panel Display ;平面直角 顯示器）製造用的玻璃基板等的被處理體等進行所定的電 漿處理之技術。 【先前技術】 φ 在FPD的製造工程中，有對LCD (液晶顯示器）基 板等的被處理體實施鈾刻處理或成膜處理等的所定電漿處 理之工程。進行該等的工程之電漿處理裝置，因爲例如可 產生高密度的電漿，所以利用感應耦合電漿（Inductively Coupled Plasma; ICP)的電漿處理裝置備受注目。此感應 耦合電漿處理裝置是例如將處理容器藉由電介體構件來區 劃成上下，在其下方側的處理空間設置基板的載置台，且 在其上方側的空間配置高頻（RF )天線，藉由對此天線供 ❿ 給高頻電力，可在前述處理空間內形成感應耦合電漿，藉 此使被供給至該處理空間內的處理氣體電漿化，構成可進 行所定的電漿處理。 在如此的感應耦合電漿處理裝置所使用的天線，一般 是使用天線線被平面地卷成環狀的螺旋天線。而且在大型 的被處理體時，因爲天線的阻抗會變大，所以組合複數的 螺旋天線使用。然而，FPD基板用的玻璃基板日益大型化 ，因此每一條的螺旋天線也會變長，阻抗會變大，該部分 高頻電流會減少，恐有不能取得高密度的電漿之虞。 -5- 201034521 於是爲了使阻抗降低，而有增加天線的分歧數，縮短 每一條的螺旋天線，或者在天線的終端或中間部插入電容 器的手法，但此情況天線的構造會複雜化，處理會變難， 且被處理體的面方向之天線電位的調整作業也會變煩雜， 結果會有難以取得均一性高的電漿之問題。 因此，本發明者們檢討有關將天線設爲直線形狀縮短 天線的長度，藉此使阻抗低下的構成。然而爲了使用直線 形狀的天線來構成大型的天線，必須配列複數的天線，此 情況例如圖27所示只是將複數同長度的天線11予以彼此 平行取所定間隔配列，將各天線1 1的兩端連接至導電線 12，13，將一方的導電線12連接至具備高頻電源及整合 器的高頻電源部14的同時，將另一方的導電線13接地之 構成而言，因爲從給電點經由各天線11來到接地點的路 徑之阻抗在各天線1 1間不同，所以流於各天線1 1的電流 大小不同，難以對被處理體的面方向產生均一性高的電漿 〇 另一方面，專利文獻1是記載在使用直線形狀的天線 來產生感應耦合電漿的裝置中，具備將8個直線狀的金屬 導體元件51〜58予以彼此平行配置的平面線圈34之構成 。該等元件51〜58內，中央的2個元件54，55是分別被 設定成連接至電纜67，72的端子62，64爲止的電性長度 相等。 然而，在此裝置中也因爲隨著往平面線圈34的外側 ，從電纜67經由元件51~58來到電纜72的路徑之電性長 -6 - 201034521 度的變化會變大’所以其結果在平面線圈34的面內無法 取得均一的阻抗。並且此裝置是以處理例如具有一邊爲 75cmx85cm的大小的平面矩形構造的液晶顯不器爲目的， 將前述各導體元件51 ~5 8的長度設定成從高頻源38所感 應的頻率（13.56MHz )的波長（22_53m)之約1/16亦即 1.41m程度，藉此使各導體元件51~58的電流及電壓變動 不會變大。 φ 然而，近年來基板有曰益大型化的傾向’有時會處理 —邊爲2m程度之更大的玻璃基板，但就專利文獻1的金 屬導體元件51〜5 8的長度而言，對於如此大小的玻璃基板 難以進行均一性高的電漿處理。又，若將金屬導體元件 51~58增長至2m以上，則因爲阻抗會增加，所以由此點 也難以解決本發明的課題。 〔先行技術文獻〕 〔專利文獻〕 β 〔專利文獻1〕特表2 001-51194 5號公報（圖2) 【發明內容】 (發明所欲解決的課題） 本發明是有鑑於如此的情事而硏發者，其目的是利用 天線來使產生感應耦合電漿，對被處理體進行電漿處理的 裝置中，抑制天線的阻抗增加的同時，調整被處理體的面 方向的電場分布，藉此提供一種可調整電漿密度分布的電 漿處理裝置。 201034521 (用以解決課題的手段） 爲此，本發明的電漿處理裝置，係使感應電場發生於 被供給處理氣體的處理容器內，使處理氣體電漿化，對載 置於處理容器內的載置台之被處理體進行電漿處理之電漿 處理裝置，其特徵係具備： 天線，其係以能夠經由處理環境來與前述載置台對向 的方式設於該處理環境之外，包含各長度爲相等，彼此橫 @ 著平行排列構成的複數個直線狀的天線構件； 高頻電源部，其係用以對前述天線供給高頻電力； 電源側導電路，其係用以將前述天線的一端側連接至 前述高頻電源部； 接地側導電路，其係用以將前述天線的另一端側連接 至接地點；及 電位分布調整用的電容器，其係設於前述電源側導電 路及接地側導電路的至少一方，用以調整天線的電位分布 © 設定成從前述高頻電源部經由各天線構件到接地點爲 止的各高頻路徑的阻抗會彼此形成相等。 又，本發明的電漿處理裝置，係使感應電場發生於被 供給處理氣體的處理容器內，使處理氣體電漿化，對載置 於處理容器內的載置台之被處理體進行電漿處理之電漿處 理裝置，其特徵係具備： 天線，其係以能夠經由處理環境來與前述載置台對向 -8- 201034521 的方式設於該處理環境之外，包含各長度爲相等，彼此橫 著平行排列構成的複數個直線狀的天線構件； 高頻電源部，其係用以對前述天線供給高頻電力； 電源側導電路，其係用以將前述天線的一端側連接至 前述高頻電源部； 接地側導電路，其係用以將前述天線的另一端側連接 至接地點； φ 電位分布調整用的電容器，其係設於前述電源側導電 路及接地側導電路的至少一方，用以調整天線的電位分布 :及 阻抗調整用的電容器，其係設於前述電源側導電路及 接地側導電路的至少一方，用以調整從前述高頻電源部經 由各天線構件到前述接地點爲止的高頻路徑的阻抗。 天線構件彼此間的間隔可構成調整自如，此情況，例 如前述天線構件的一端側及另一端側可被連接至在天線構 • 件的配列方向移動自如的移動部。 又，例如各長度相等的複數個直線狀的天線構件係形 成相鄰且彼此並聯而成的區段，該區段可被複數配置，在 此，較理想是前述區段係被配置偶數個，前述電源側導電 路及接地側導電路係以在各區段之間前述高頻路徑的物理 性長度會形成相等的方式，結線相鄰的區段彼此間，而階 梯狀地配線成如決定淘汰賽（tournament )的組合之線圖 狀。又，較理想是在任一的區段中，前述天線構件的配列 間隔皆相等。 -9 - 201034521 又，前述天線可具備： 複數的密部區域，其係複數的天線構件會彼此以第1 間隔來配列；及 疏部區域，其係設於該等密部區域彼此間之間，複數 的天線構件會彼此以比前述第1間隔更大的第2間隔來配 列。 在此，前述第1間隔係構成前述區段的天線構件的間 隔，前述第2間隔可爲相鄰的區段彼此間的間隔。前述區 段彼此間的間隔係調整自如地構成。又，前述區段的一端 及另一端側係例如被連接至在前述區段的配列方向移動自 如的移動部。 又，爲了劃定前述處理環境，而具備設於前述載置台 與天線之間的電介體窗構件， 此電介體窗構件可具備： 複數個板狀的介質性構件，其係以能夠和前述載置台 對向的方式設置；及 複數的隔開部，其係爲了支持此介質性構件，而沿著 前述介質性構件的長度方向，以能夠和前述天線構件正交 的方式設置。 在此，較理想是在前述隔開部的內部形成有處理氣體 室，且在隔開部的下面，爲了對前述處理容器供給處理氣 體，而形成有與前述處理氣體室連通的氣體供給孔。又， 較理想是前述複數的隔開部係設成分別藉由吊起支持部來 從前述處理容器的頂部吊下來，在此吊起支持部的內部形 -10- 201034521 成有與前述隔開框部的處理氣體室連通之處理氣體的通流 路。又，前述電位分布調整用的電容器係用以進行阻抗的 調整者，而使前述天線構件的長度方向中央部位的電位能 夠形成零。 〔發明的效果〕 若根據本發明，則在使用天線來使感應耦合電漿發生 φ ，而對被處理體進行電漿處理的裝置中，因爲配列直線狀 之同長度的天線構件來構成天線，所以天線構件的阻抗增 加會被抑制，可生成高密度的電漿。又，若根據請求項1 的發明，則因爲設定成從高頻電源部經由各天線構件來到 接地點的各高頻路徑的阻抗會彼此形成相等，所以被處理 體的面方向的電場的均一性會提升，藉此可生成均一性高 的電漿，可對被處理體進行面內均一性高的電漿處理。 若根據請求項2的發明，則因爲可藉由阻抗調整用的 φ 電容器來分配於天線構件而調整前述高頻路徑的阻抗，所 以該高頻路徑的阻抗的調整自動度會變高。例如在提高被 處理體的面方向的電場的均一性，或天線構件被多數設置 時，可在天線構件的配列方向的內側與外側之間進行使電 場分布變化之類的電場分布的調整，因此其結果可使對被 處理體之電漿處理的均一性提升。 【實施方式】 以下’參照圖來說明有關本發明的電漿處理裝置的實 -11 - 201034521 施形態。圖1是前述電漿處理裝置的縱剖面圖，圖1中2 是例如氣密地構成方形筒狀且被接地的處理容器。此處理 容器2是藉由導電性材料例如鋁所構成，且由透過高頻的 電介體窗構件3來將其內部氣密地區劃成上下，前述電介 體窗構件3的上方側是作爲天線室2 1，下方側是作爲電漿 生成室22。在前述電漿生成室22的內部設有用以載置基 板（玻璃基板G)的載置台27。前述玻璃基板G爲使用 例如FPD製造用之形成一邊爲2m的矩形狀的方形玻璃基 板。 前述載置台27是藉由絕緣構件28來包圍其側周部及 底部的周緣側，可在藉由此絕緣構件28來對處理容器2 的底壁絕緣的狀態下被支撐。並且在載置台27具備偏壓 用高頻電源及具備整合器的偏壓用高頻電源部29，該偏壓 用高頻電源是用以對該載置台27供給偏壓用的高頻電力 例如頻率爲3·2ΜΗζ的高頻電力。 並且在載置台27內藏有未圖示的昇降銷，用以在與 外部的搬送手段之間進彳了玻璃基板G的交接。 前述電介體窗構件3是爲了劃定處理環境，而以能夠 構成電漿生成室22的頂部之方式，與前述載置台27對向 設置的大略板狀體’例如具備藉由鋁等的金屬材料所構成 的樑部31及在此樑部31支撐其側部的板狀電介體構件32 。前述電介體構件32是例如藉由石英或氧化鋁（Al2〇3：) 等的陶瓷等所構成。並且，在對玻璃基板G進行電绩處理 時’電漿生成室22內部的壓力會被設定成真空狀態，被 -12- 201034521 要求所定的強度，因此其厚度會被設定成例如約3 0mm程 度。 前述樑部31是如圖2的槪略立體圖及圖3的平面圖 所示，具備從處理容器2的側壁突出至內部，構成天線室 21的底部之外框部33、及在此外框部33的內側彼此平行 延伸於圖中Y方向的複數個例如4個的隔開部34。藉由 此隔開部34在外框部33的內側形成有與前述γ方向平行 φ 的5個分割區域，分別在該等分割區域配設有前述電介體 構件3 2。如圖1所示，例如在外框部3 3與隔開部3 4形成 有用以支撐電介體構件32的階部35，且在前述電介體構 件32亦形成有卡合於此階部35的階部36，在樑部31嵌 入電介體構件32，構成電介體窗構件3。 如此的電介體窗構件3是藉由圖1中延伸於Z方向的 吊起支持部4來從處理容器2的頂部垂吊的狀態下，以該 電介體窗構件3能夠形成水平的方式來設於處理容器2。 φ 前述吊起支持部4是在其內部形成有處理氣體的通流路41 ，其一端側是被連接至隔開部3 4的上面，另一端側是被 連接至處理容器2的頂部20。 又，如圖3(b)的電介體窗構件3的A-A*剖面圖所 示，在隔開部34的內部，以能夠沿著其長度方向（圖中 Y方向）來與前述吊起支持部4的通流路41連通之方式 形成有處理氣體室42，且在隔開部34的下面，多數的氣 體供給孔43會沿著其長度方向來取所定間隔設置。 並且在處理容器2的頂部20以能夠和前述吊起支持 -13- 201034521 部4的通流路41連通之方式形成有氣體流路44，在此氣 體流路44連接處理氣體供給系45。此處理氣體供給系45 是具備被連接至氣體流路44的氣體供給路45a、流量調整 部45b、處理氣體供給源45c。如此電介體窗構件3是兼 具將處理氣體供給至電漿生成室22內的氣體供給手段， 從處理氣體供給系45經由吊起支持部4來供給至隔開部 34的處理氣體可經由隔開部34下面的氣體供給孔43來供 給至電漿生成室22內。 如此在藉由電介體窗構件3所形成的前述天線室21， 在電介體窗構件3的近旁，以能夠和該電介體窗構件3對 向的方式設有直線狀的天線構件51會被平面性地配列的 天線5。此天線5是將各個長度相等的複數個直線狀的天 線構件5 1予以彼此橫著平行排列，且將彼此並聯而成的 複數個區段52予以橫著平行配置來構成。就此例而言， 前述天線構件5 1是以能夠和電介體窗構件3的隔開部3 4 正交的方式配列成伸長於圖中X方向。另外，在圖面中， 爲了避免圖示的混亂，而以黑的一條線來表示天線構件5 1 〇 此例的區段52是將同一徑且物理性長度相等的複數 個例如4個的天線構件5 1予以彼此橫著平行且等間隔排 列，其長度方向（X方向）的兩端側會分別藉由延伸於圖 中Y方向的天線構件50所連接，以各天線構件51能夠彼 此並聯的方式構成。 而且在天線5配置有偶數個的區段52，就此例而言是 201034521 設有2n個例如22個（4個）的區段52。該等區段52 ( 52A~52D)是相鄰的區段52的天線構件51彼此間會被互 相平行設置，且配列成構成相鄰的區段52彼此間的間隔 L2要比構成一個區段52的天線構件5 1彼此間的間隔L1 更大。 藉此，天線5是複數個天線構件51彼此以第1間隔 來緊密配列的密部區域52(區段52)與複數個天線構件 φ 5 1彼此以第2間隔來配列的疏部區域5 3 (相鄰的區段52 彼此之間）會在前述γ方向交替設置。 而且前述電介體窗構件3的吊起支持部4是以不干擾 被多數配列的天線構件5 1之方式設於前述相鄰的區段52 彼此之間的前述疏部區域53。 如此的區段52是如圖2所示具備與載置台27對向延 伸於前述X方向的水平區域54，區段52的長度方向（前 述X方向）之前述水平區域54的兩外側的區域55，亦即 # 區段52的長度方向的兩端部是分別向上方側例如垂直立 起。前述區段52的水平區域54是如圖1〜圖3所示，設定 成覆蓋被載置於載置台27上的玻璃基板G的X方向的長 度之大小。並且區段52是以能夠覆蓋玻璃基板G的Y方 向的長度之方式配列於處理容器2的全體。就此例而言， 電漿生成室22的X方向的長度的中央部位是與被載置於 載置台27的玻璃基板G的X方向的長度的中央部位一致 ，且以能夠和前述區段52的前述水平區域54的長度方向 的中央部位一致之方式設定電漿生成室22或載置台27、 -15- 201034521 區段52的各個尺寸或設置位置。 如此的天線5的一端側是經由電源側導電路ό1來連 接至電漿發生用的高頻電源部6，該電漿發生用的高頻電 源部6是具備用以對前述天線5供給感應锅合電獎發生用 的高頻電力例如頻率爲13.56MHz的高頻電力之電漿發生 用高頻電源及整合器。在此’前述電源側導電路61是如 圖2及圖4所示，設定成從與各區段52的連接部到前述 高頻電源部6爲止的路徑的電性長度在各區段52形成相 @ 等。在此所謂電性長度相等，是意謂從高頻電源部6到各 區段52的連接部爲止的導電路61的阻抗相等，除了導電 路61的物理性長度相等的情形以外，還包含即使物理性 長度相異，導電路61的剖面積亦相異，結果從高頻電源 部6到前述連接部的導電路61的阻抗形成相等的情況， 或如後述般亦含調整阻抗的元件來調和阻抗的情況。 就此例而言，電源側導電路61是設定成從與各區段 52的連接部到前述高頻電源部6爲止的物理性長度會相等 0 。若具體參照圖2及圖4來說明，則電源側導電路61是 從天線構件51的配列方向（圖中γ方向）的一端側，相 鄰的區段5 2A，5 2B會藉由第1段的導電路61a來連接， 其次相鄰的區段52C，52D會藉由第1段的導電路61b來 連接。而且該等第1段的導電路61a，61b的中間點彼此 間會藉由第2段的導電路61c來連接，構成此第2段的導 電路61c的中間點與高頻電源部6會藉由終端導電路61d 來連接。 -16- 201034521 又，天線5的另一端側是藉由接地側導電路62來連 接成接地的同時，在天線5與接地點之間設有成爲電位分 布調整用的電容器之電容可變電容器7。前述接地側導電 路62是如圖2及圖4所示，設定成從與各區段52的連接 部位到前述電容可變電容器7爲止的電性長度對各區段52 而言形成相等。就此例而言，接地側導電路62是設定成 從與各區段52的連接部到前述電容可變電容器7爲止的 φ 物理性長度會形成相等。 亦即，接地側導電路62是例如圖2及圖4所示，從 天線構件5 1的配列方向（圖中Y方向）的一端側，相鄰 的區段52A，52B會藉由第1段的導電路62a來連接，其 次相鄰的區段52C，52D會藉由第1段的導電路62b來連 接。而且該等第1段的導電路62a，62b的中間點彼此間 會藉由第2段的導電路62c來連接，構成此第2段的導電 路62c的中間點與前述電容可變電容器7會藉由導電路 φ 62d來連接。又，由於至電容可變電容器7爲止的物理性 長度相等，所以連結各區段52與前述接地點的導電路62 的物理性長度也形成相等。如此一來，此例是藉由使從各 區段52A〜52D的前述高頻電源部6到前述接地點的高頻 路徑的物理性長度一致，藉此設定成前述高頻路徑的電性 長度（阻抗）會彼此形成相等。前述所謂高頻路徑，詳細 是意指從電漿發生用的高頻電源部6的整合器的下游側通 過各區段到前述接地點的路徑。 在此如圖2所示，電源側導電路6 1 a〜6 1 c及接地側導 -17- 201034521 電路62 a~62c是包含水平的導電路及立起的導電路，簡單 而言，在各區段52之間以前述高頻路徑的電性長度能夠 形成相等的方式，使相鄰的區段52彼此間結線，而階梯 狀地配線成如決定淘汰賽的組合之線圖狀。 前述電容可變電容器7是設於終端導電路62d的各接 地側導電路62的合流點與接地點之間，調整其電容，而 來調整天線5的阻抗，藉此用以調整天線5的長度方向的 電位分布者。利用圖5〜圖7來說明有關此電位分布的調整 ^ 。圖5(a)是未設置電容可變電容器7時的構成圖，此情 況，某時間點之天線5的長度方向（圖中X方向）的電位 分布是如圖5(b)所示形成一方上升。 相對的，若設置電容可變電容器7,則圖6(a)之高 頻電源部6的出口側的位置P1、及電容可變電容器7的 入口側的位置P2的電位的時間的變化是如圖7般彼此形 成各90度相位偏移的狀態，因此天線5的長度方向之瞬 間的電位Vp (高頻的峰値電位）的分布是形成圖6(b) Q 那樣。亦即，位置P2的電位會對應於電容可變電容器7 的電容而形成負，因此位置P1〜位置P2的電位分布是在 途中具有零點。所以藉由調整電容可變電容器7的電容， 可在天線5的長度方向自由設定電位Vp的零點位置，就 此例而言是調整成零點會位於天線5的長度方向的中央位 置P3。藉由如此調整天線5的長度方向的電位分布，可 控制天線的長度方向的電漿密度。 回到圖1進行說明，在處理容器2中，在其側周壁用 -18 - 201034521 以對處理容器2的電漿生成室22搬出入玻璃基板G的開 口部23會藉由閘閥24來設成開閉自如，且在其底部連接 排氣路25，此排氣路25的另一端側是經由排氣量調整部 26a來連接至成爲真空排氣手段的真空泵26。又，該電漿 處理裝置是構成藉由控制部來控制。此控制部是例如由電 腦所構成，具備CPU、程式、記憶體。在前述程式中編入 有命令（各步驟），使能夠從控制部來對電漿處理裝置的 ❿ 各部傳送控制信號，進行所定的電漿處理。此程式是被儲 存於電腦記憶媒體，例如軟碟、光碟、硬碟、光磁碟（ MO)等的記憶部、而安裝於電腦。 其次，說明有關上述實施形態的作用。首先開啓閘閥 24，從開口部23藉由未圖示的外部搬送手段來將玻璃基 板G搬入電漿生成室22內，經由未圖示的昇降銷來載置 於載置台27。其次從處理氣體供給系45供給處理氣體至 電漿生成室22內，另一方面，經由排氣路25利用真空泵 φ 26來將電漿生成室22內予以真空排氣至所定的真空度。 另外天線室21是被設定成大氣環境。 其次從高頻電源部6將例如13.5 6MHz的高頻電力供 給至天線5。藉此在天線5的周圍產生感應電場，處理容 器2內的處理氣體會藉由此電場的能量來電漿化（活性化 )而產生電漿。然後從偏壓用高頻電源部29來將例如 3.2 MHz的高頻電力供給至載置台27，藉此將電漿中的離 子引入載置台27側，對玻璃基板G進行蝕刻處理。 在此，由天線構件51所構成的4個區段52是如已述 -19- 201034521 般對高頻電力的供給點與接地點如所謂的淘汰賽（ tournament)的組合線圖般彼此結線而對應於各區段52的 高頻路徑的阻抗因爲相等，所以在Y方向（天線5的配列 方向）看處理容器2時，各區段52的電位是形成同電位 。區段52是具有複數個直線狀的天線構件51，在此例是 4個的天線構件51，若詳細看，則外2個的天線構件51 與內2個的天線構件51是路徑的長度在區段52內不同。 因此，有關區段52的各個在前述配列方向看時不是同電 位，有些微的電位分布，但此電位分布的模式在各區段52 間一致。 可是若天線構件5 1的配列間隔在天線5全體爲同樣 ，則電漿密度會如圖8 ( b )所示形成中央高，兩端低的山 形分布。亦即全天線構件51之中，設於中央部的天線構 件51的下方側，電漿密度會變最高，形成電槳密度會由 此隨著往外側而慢慢地降低那樣的電漿密度分布。因此就 天線5全體而言，電漿密度的高低差會變大，電漿密度的 面內均一性會變低。 相對的，在本實施形態是使相鄰的區段52彼此間的 間隔L2比區段52內的天線構件彼此間51的間隔L1更廣 ，交替形成密部區域52與疏部區域53，因此如圖8(a) 所示，電漿的密度是在各區段52形成山形的分布，所以 沿著被處理體的面方向之電漿密度分布是形成均一性高者 。亦即，就密部區域52而言，雖在對應於中央的天線構 件5 1的位置，電漿密度會變大，但電漿密度的變化小。 -20- 53 201034521 其 16 爲 構 分 » 的 所 電 度 狀 9 天 (X 會 的 來 短 抑 致 而且在前述配列方向交替配列密部區域52與疏部區域 ，因此密度變化小的電漿會在前述配列方向連續形成， 結果，電漿密度的面內均一性會提升。 而且若針對天線5的長度方向來看，則如已述的圖 (b)所示，天線構件51的長度方向的中央部位的電位 零，電位分布是對此零點形成左右對稱。此情況在天線 件51的周緣是電容結合會變多，感應耦合小，且電位 φ 布是對天線構件51的長度方向的中央部位呈左右對稱 因此電漿密度分布是如圖6(c)所示，其結果形成·中央 電漿密度變高的山形分布。 相對的，就未設置電容器的構成而言，如圖5(c) 示，是形成電位Vp低的接地點側的電漿密度高，高頻 源部6側的電漿密度低的分布，形成天線構件51的長 方向的一方側的電漿密度高，另一方側的電漿密度低的 態，因此均一性降低。由以上的情事，在處理容器2中 • 有關X方向（天線構件51的長度方向），或Y方向（ 線構件51的配列方向），因爲沿著被處理體的面方向 ，Y平面）之電位分布的均一性高，所以電場的均一性 提升。因此電漿密度的面內均一性會變高，在被處理體 面內進行均一性高的電漿處理。 如此的電漿處理裝置是利用直線狀的天線構件51 構成天線5，因此相較於螺旋天線，天線構件51的長度 ，且可降低阻抗。因此相較於使用螺旋天線時，可容易 制天線電位。又，如已述般藉由使各區段52的阻抗一 -21 - 201034521 ，及利用電容可變電容器7來調整電位分布而使天線構件 51的長度方向的中央部位的電位VP能夠形成零，以及交 替形成天線構件51的配列間隔相異的密部區域5 2與疏部 區域53，可在處理容器2內於天線構件51的配列方向及 長度方向產生均一性高的電漿，可對被處理體進行面內均 一性高的電漿處理。更藉由使各區段52對高頻電力的供 給點及接地點如所謂淘汰賽的組合線圖般彼此結線，可用 簡易的構成來使各區段52的阻抗一致，極爲有效。 ❿ 又，本發明因爲電介體窗構件3的隔開部34是設成 與天線5的天線構件51正交，所以在隔開部34之感應電 流的發生會被抑制，抑止來自天線5的感應電場徒勞無用 的衰減而順暢地透過至電漿生成室22。並且設置複數個的 隔開部3 4來形成複數個的分割區域，分別在此分割區域 配設電介體構件32，因此可使設於1個分割區域的電介體 構件32小型化。而且被小型化的電介體構件32是以隔開 部34及外框部33所構成的樑部31來支撐其周圍，因此 Q 在氣密地區劃真空環境的電漿生成室22、大氣環境的天線 室21之間時，可確保充分的強度。更因爲經由電介體窗 構件3的隔開部34來將處理氣體供給至電漿生成室22， 電介體窗構件3兼具處理氣體供給手段，所以可減少電漿 處理裝置的構成構件，謀求裝置的簡易化，有助於製造成 本的降低。 接著，參照圖9來說明有關天線的其他構成例。圖9 (a)的構成之天線81是具備2n個，此例是具備23個（8 -22- 201034521 個）以直線狀彼此平行延伸之同徑且長度相等的2個天線 構件80爲一組的區段82之構成。此例是構成2個區段82 的4個天線構件80會彼此以間隔L1來等間隔配置，構成 天線構件80被緊密地配列的密部區域82，且2個區段82 與鄰接的2個區段8 2之間是以比前述間隔L1更大的間隔 L2來配置天線構件80，構成天線構件80被稀疏地配列的 疏部區域85。而且使各區段82藉由電源側導電路83及接 φ 地側導電路84來對前述高頻電源部6的輸出端之高頻電 力的供給點與接地點如所謂的淘汰賽的組合線圖般彼此結 線，藉此設定成從各區段82的前述高頻電源部6到前述 接地點之路徑的物理性長度會彼此相等。 又’圖9(b)的構成之天線86是具備2n個，此例是 具備22個以直線狀彼此平行延伸之物理性長度相等的3 個天線構件87爲一組的區段88之構成，除了天線構件87 的數量不同以外’其餘則與上述天線5同樣地構成。 Φ 又’本發明如圖1〇所示，亦可在電源用導電路側設 置阻抗調整用的電容可變電容器。此例的天線9是例如4 個區段91A〜91D配列於γ方向，在天線9的給電側是外 側的2個區段91A，91D彼此間藉由電源側導電路92 a來 連接’經由導電路92b來連接至高頻電源部6，在導電路 92a與導電路92b的合流點與高頻電源部6之間是設有阻 抗調整用的電容可變電容器93A。並且內側的2個區段 91B’ 91C彼此間會藉由電源側導電路92a來連接，經由 導電路92d來連接至高頻電源部6，在導電路92c與導電 -23- 201034521 路92 d的合流點與高頻電源部6之間是設有阻抗調整用的 電容可變電容器93B。 另一方面在天線9的接地側，外側的2個區段91A’ 91D彼此間是藉由接地側導電路93a來連接’經由導電路 93b來接地，在導電路93a與導電路93b的合流點與接地 點之間是設有電位分布調整用的電容固定電容器94A°並 且內側的2個區段91B，91C彼此間會藉由接地側導電路 93c來連接，經由導電路93d來接地，在導電路93c與導 電路93d的合流點與接地點之間是設有電位分布調整用的 電容固定電容器94B。 在此例中，前述電容可變電容器93A，93B的目的是 在於改變經由內側的區段91B，91C來從前述高頻電源部 6到前述接地點爲止之高頻路徑的阻抗、及經由外側的區 段9 1 A，9 1 D之前述高頻路徑的阻抗。例如以使經由外側 的區段91A，91D之前述高頻路徑的阻抗能夠比經由內側 的區段91B，91C之前述高頻路徑的阻抗更大的方式，調 整電容可變電容器93A，93B的電容，藉此可使流動於內 側的區段9 1 B，9 1 C的高頻電流比流動於外側的區段9 1 A ，91D的高頻電流更多，進行相對於外側的區段91A， 91D擴大內側的區段91B，91C的電漿密度之類的電漿密 度的面內分布的控制。[Technical Field] The present invention is a technique for performing a predetermined plasma treatment on a target object such as a glass substrate for manufacturing an FPD (Flat Panel Display). [Prior Art] φ In the manufacturing process of the FPD, there is a process of performing a plasma treatment such as uranium engraving or film formation on a substrate to be processed such as an LCD (Liquid Crystal Display) substrate. In the plasma processing apparatus for performing such processes, for example, a plasma having a high density can be produced. Therefore, a plasma processing apparatus using Inductively Coupled Plasma (ICP) has been attracting attention. In the inductively coupled plasma processing apparatus, for example, a processing container is partitioned into upper and lower sides by a dielectric member, a mounting table on which a substrate is disposed in a processing space on a lower side thereof, and a high frequency (RF) antenna is disposed in a space above the processing space. By supplying high frequency power to the antenna, an inductively coupled plasma can be formed in the processing space, thereby plasma-treating the processing gas supplied into the processing space to form a predetermined plasma processing. . The antenna used in such an inductively coupled plasma processing apparatus is generally a helical antenna which is planarly wound into a ring shape using an antenna wire. Further, in the case of a large object to be processed, since the impedance of the antenna is increased, a plurality of helical antennas are used in combination. However, the glass substrate for the FPD substrate is becoming larger and larger, so that each of the spiral antennas is also lengthened, the impedance is increased, and the high-frequency current is reduced in this portion, so that high-density plasma may not be obtained. -5- 201034521 Therefore, in order to reduce the impedance, there is a problem of increasing the number of divergence of the antenna, shortening each of the helical antennas, or inserting a capacitor at the terminal or the intermediate portion of the antenna. However, the configuration of the antenna is complicated, and the processing will be complicated. It is difficult to adjust the antenna potential in the surface direction of the object to be processed, and as a result, it is difficult to obtain a plasma having high uniformity. Therefore, the inventors of the present invention have reviewed a configuration in which the antenna is linearly shortened to shorten the length of the antenna, whereby the impedance is lowered. However, in order to form a large antenna using a linear antenna, a plurality of antennas must be arranged. For example, as shown in FIG. 27, only the plurality of antennas 11 of the same length are arranged in parallel with each other at a predetermined interval, and both ends of each antenna 11 are arranged. Connecting to the conductive wires 12, 13, connecting one of the conductive wires 12 to the high-frequency power supply portion 14 including the high-frequency power supply and the integrator, and grounding the other conductive wire 13 is because the power is supplied from the power supply point. The impedance of the path from the antenna 11 to the ground point is different between the antennas 11. Therefore, the magnitude of the current flowing through the antennas 1 is different, and it is difficult to produce a plasma having high uniformity in the surface direction of the object to be processed. Patent Document 1 discloses a configuration in which an inductively coupled plasma is produced using a linear antenna, and includes a planar coil 34 in which eight linear metal conductor elements 51 to 58 are arranged in parallel with each other. In the elements 51 to 58, the central two elements 54, 55 are electrically connected to the terminals 62, 64 of the cables 67, 72, respectively, to have equal electrical lengths. However, in this apparatus, the change in the electrical length of the path from the cable 67 to the cable 72 via the elements 51 to 58 is increased as the outer side of the planar coil 34 becomes larger, so the result is A uniform impedance cannot be obtained in the plane of the planar coil 34. Further, the apparatus is designed to process, for example, a liquid crystal display having a planar rectangular structure having a size of 75 cm x 85 cm, and the length of each of the conductor elements 51 to 58 is set to a frequency (13.56 MHz) induced by the high frequency source 38. About 1/16 of the wavelength (22_53 m) is about 1.41 m, whereby the current and voltage variations of the respective conductor elements 51 to 58 do not become large. φ However, in recent years, there has been a tendency for the substrate to increase in size, which is sometimes treated as a glass substrate having a larger size of about 2 m, but in terms of the length of the metal conductor members 51 to 58 of Patent Document 1, A large-sized glass substrate is difficult to perform plasma processing with high uniformity. Further, when the metal conductor elements 51 to 58 are grown to 2 m or more, the impedance is increased, so that it is difficult to solve the problem of the present invention. [PRIOR ART DOCUMENT] [Patent Document] β [Patent Document 1] Special Table 2 001-51194 No. 5 (FIG. 2) [Description of the Invention] The present invention has been made in view of such circumstances. The purpose of the present invention is to provide an inductively coupled plasma by means of an antenna, and to suppress the increase in impedance of the antenna while adjusting the electric field distribution of the surface of the object to be processed, thereby providing an inductively coupled plasma. A plasma processing apparatus capable of adjusting a plasma density distribution. 201034521 (Means for Solving the Problem) Therefore, in the plasma processing apparatus of the present invention, the induced electric field is generated in the processing container to which the processing gas is supplied, and the processing gas is plasma-formed and placed in the processing container. A plasma processing apparatus for performing plasma treatment on a workpiece of a mounting table, characterized in that the antenna includes an antenna that is disposed outside the processing environment so as to be able to face the mounting table via a processing environment, and includes each length a plurality of linear antenna members which are arranged in parallel with each other in parallel; a high frequency power supply unit for supplying high frequency power to the antenna; and a power supply side conduction circuit for connecting one end of the antenna a side connected to the high frequency power supply unit; a ground side conduction circuit for connecting the other end side of the antenna to a ground point; and a capacitor for adjusting potential distribution, which is provided on the power supply side conduction circuit and the ground side At least one of the conductance circuits adjusts the potential distribution of the antenna © a high frequency path from the high frequency power supply unit to each of the ground members via the antenna member The impedance will form equal to each other. Further, in the plasma processing apparatus of the present invention, the induced electric field is generated in the processing container to which the processing gas is supplied, the processing gas is plasma-formed, and the object to be processed placed on the mounting table in the processing container is subjected to plasma treatment. The plasma processing apparatus is characterized in that: an antenna is provided outside the processing environment so as to be able to face the mounting table -8-201034521 via a processing environment, and includes each length being equal to each other a plurality of linear antenna members configured in parallel; a high frequency power supply unit for supplying high frequency power to the antenna; and a power supply side conduction circuit for connecting one end side of the antenna to the high frequency power supply a grounding side conduction circuit for connecting the other end side of the antenna to a ground point; and a capacitor for adjusting the potential distribution of at least one of the power supply side conduction circuit and the ground side conduction circuit; To adjust the potential distribution of the antenna: and a capacitor for impedance adjustment, which is provided in at least one of the power supply side conduction circuit and the ground side conduction circuit, for adjusting the slave The high-frequency power supply unit passes through the impedance of the high-frequency path from the antenna member to the ground point. The distance between the antenna members can be adjusted. In this case, for example, the one end side and the other end side of the antenna member can be connected to a moving portion that is freely movable in the arrangement direction of the antenna member. Further, for example, a plurality of linear antenna members having the same length are formed as segments which are adjacent to each other and are connected in parallel, and the segments may be plurally arranged. Here, it is preferable that the segments are arranged in an even number. The power supply side conduction circuit and the ground side conduction circuit are formed such that the physical lengths of the high frequency paths are equal between the segments, and the adjacent segments of the connection lines are mutually arranged, and the steps are wired to determine the knockout. The line diagram of the combination of (tournament). Further, it is preferable that the arrangement intervals of the antenna members are equal in any of the sections. -9 - 201034521 Further, the antenna may include: a plurality of dense portion regions in which a plurality of antenna members are arranged at a first interval; and a sparse portion region which is disposed between the dense portions The plurality of antenna members are arranged at a second interval that is larger than the first interval. Here, the first interval constitutes a space between the antenna members of the segment, and the second interval may be an interval between adjacent segments. The interval between the aforementioned sections is adjusted to be freely adjustable. Further, one end and the other end side of the above-described section are connected, for example, to a moving portion that is freely movable in the arrangement direction of the above-described section. Further, in order to define the processing environment, a dielectric window member provided between the mounting table and the antenna is provided. The dielectric window member may include a plurality of plate-shaped dielectric members. The mounting table is disposed to face each other; and a plurality of partitioning portions are provided to be orthogonal to the antenna member along the longitudinal direction of the dielectric member in order to support the dielectric member. Here, it is preferable that a processing gas chamber is formed inside the partition portion, and a gas supply hole that communicates with the processing gas chamber is formed on the lower surface of the partition portion in order to supply the processing gas to the processing chamber. Further, it is preferable that the plurality of spaced portions are suspended from the top of the processing container by lifting the support portion, and the inner shape of the lifting support portion is separated from the foregoing. A flow path of the processing gas that communicates with the processing gas chamber of the frame portion. Further, the capacitor for adjusting the potential distribution is for adjusting the impedance, and the potential of the central portion of the antenna member in the longitudinal direction can be made zero. [Effects of the Invention] According to the present invention, in an apparatus for performing plasma processing on an inductively coupled plasma using an antenna, an antenna is formed by arranging linear antenna members of the same length to form an antenna. Therefore, the increase in the impedance of the antenna member is suppressed, and a high-density plasma can be generated. According to the invention of claim 1, since the impedances of the high-frequency paths that are set to the ground point from the high-frequency power source unit via the respective antenna members are equal to each other, the electric field uniformity in the surface direction of the object to be processed is uniform. The property is improved, whereby a plasma having high uniformity can be generated, and the object to be treated can be subjected to plasma treatment with high in-plane uniformity. According to the invention of claim 2, since the impedance of the high-frequency path can be adjusted by being distributed to the antenna member by the φ capacitor for impedance adjustment, the adjustment accuracy of the impedance of the high-frequency path becomes high. For example, when the uniformity of the electric field in the surface direction of the object to be processed is increased, or when the antenna member is provided in a large number, the electric field distribution such as the electric field distribution can be adjusted between the inner side and the outer side in the arrangement direction of the antenna member. As a result, the uniformity of the plasma treatment of the object to be treated can be improved. [Embodiment] Hereinafter, a configuration of a plasma processing apparatus according to the present invention will be described with reference to the drawings. Fig. 1 is a longitudinal sectional view of the above-described plasma processing apparatus, and in Fig. 1, 2 is a processing container which is, for example, airtightly formed into a rectangular cylindrical shape and grounded. The processing container 2 is made of a conductive material such as aluminum, and the inner airtight portion of the dielectric window member 3 that transmits the high frequency is vertically divided, and the upper side of the dielectric window member 3 serves as The lower side of the antenna chamber 2 is the plasma generating chamber 22. A mounting table 27 on which a substrate (glass substrate G) is placed is provided inside the plasma generating chamber 22. The glass substrate G is, for example, a rectangular prismatic glass substrate having a side of 2 m formed for the production of FPD. The mounting table 27 surrounds the side peripheral portion and the peripheral side of the bottom portion by the insulating member 28, and can be supported by the insulating member 28 to insulate the bottom wall of the processing container 2. Further, the mounting table 27 includes a bias high frequency power supply and a bias high frequency power supply unit 29 including an integrator for supplying a high frequency power for biasing the mounting table 27, for example. High frequency power with a frequency of 3.2 ΜΗζ. Further, a lifting pin (not shown) is housed in the mounting table 27 for transferring the glass substrate G between the external transfer means. The dielectric window member 3 is provided with a metal such as aluminum, for example, such that the substantially plate-shaped body that is disposed opposite the mounting table 27 so as to be able to form a top portion of the plasma generating chamber 22 The beam portion 31 composed of the material and the plate-shaped dielectric member 32 supporting the side portion of the beam portion 31. The dielectric member 32 is made of, for example, ceramic such as quartz or alumina (Al 2 〇 3:). Further, when the glass substrate G is subjected to electrical performance processing, the pressure inside the plasma generating chamber 22 is set to a vacuum state, and the predetermined intensity is required by -12-201034521. Therefore, the thickness thereof is set to, for example, about 30 mm. . As shown in the schematic perspective view of FIG. 2 and the plan view of FIG. 3, the beam portion 31 includes a frame portion 33 that forms a bottom portion of the antenna chamber 21 and a frame portion 33 that protrudes from the side wall of the processing chamber 2, and the frame portion 33. The inner sides extend in parallel with each other in a plurality of, for example, four partition portions 34 in the Y direction in the drawing. The partition portion 34 has five divided regions which are parallel to the γ direction φ on the inner side of the outer frame portion 33, and the dielectric members 32 are disposed in the divided regions. As shown in FIG. 1, for example, the outer frame portion 33 and the partition portion 34 form a step portion 35 for supporting the dielectric member 32, and the dielectric member 32 is also formed with the step portion 35. The step portion 36 is fitted with the dielectric member 32 in the beam portion 31 to constitute the dielectric window member 3. Such a dielectric window member 3 is suspended from the top of the processing container 2 by the lifting support portion 4 extending in the Z direction in FIG. 1, and the dielectric window member 3 can be horizontally formed. It is provided in the processing container 2. φ The hoisting support portion 4 is a through-flow path 41 in which a processing gas is formed inside, and one end side thereof is connected to the upper surface of the partition portion 34, and the other end side is connected to the top portion 20 of the processing container 2. Further, as shown in the AA* cross-sectional view of the dielectric window member 3 of FIG. 3(b), the inside of the partition portion 34 can be supported along the longitudinal direction (Y direction in the drawing) and the aforementioned lifting support. The processing gas chamber 42 is formed so as to communicate with the through-flow path 41 of the portion 4, and a plurality of gas supply holes 43 are provided at predetermined intervals along the longitudinal direction of the lower portion of the partition portion 34. Further, a gas flow path 44 is formed in the top portion 20 of the processing container 2 so as to be able to communicate with the flow path 41 of the portion 4 of the lifting support -13 - 201034521, and the gas flow path 44 is connected to the processing gas supply system 45. The processing gas supply system 45 includes a gas supply path 45a connected to the gas flow path 44, a flow rate adjusting unit 45b, and a processing gas supply source 45c. The dielectric window member 3 is a gas supply means for supplying the processing gas into the plasma generation chamber 22, and the processing gas supplied from the processing gas supply system 45 to the partition portion 34 via the lifting support portion 4 can be supplied via The gas supply hole 43 below the partition portion 34 is supplied into the plasma generation chamber 22. In the antenna chamber 21 formed by the dielectric window member 3, a linear antenna member 51 is provided in the vicinity of the dielectric window member 3 so as to be opposed to the dielectric window member 3. The antenna 5 that will be arranged in a planar manner. In the antenna 5, a plurality of linear antenna members 51 having the same length are arranged side by side in parallel, and a plurality of segments 52 which are connected in parallel with each other are arranged side by side in parallel. In this example, the antenna member 51 is arranged to be elongated in the X direction in the drawing so as to be orthogonal to the partition portion 34 of the dielectric window member 3. In addition, in the drawing, in order to avoid the confusion of the illustration, the antenna member 5 1 is indicated by a black line. The section 52 of this example is a plurality of, for example, four antennas having the same diameter and the same physical length. The members 51 are arranged parallel to each other at equal intervals, and both end sides in the longitudinal direction (X direction) are respectively connected by the antenna member 50 extending in the Y direction in the drawing, so that the respective antenna members 51 can be connected in parallel with each other. Way composition. Further, an even number of sections 52 are disposed in the antenna 5, and in this example, 201034521 is provided with 2n, for example, 22 (four) sections 52. The segments 52 (52A-52D) are such that the antenna members 51 of the adjacent segments 52 are arranged parallel to each other, and are arranged such that the interval L2 between adjacent segments 52 is different from that of the segments. The antenna members 51 of 52 have a larger interval L1 from each other. Thereby, the antenna 5 is a sparse region 52 in which the plurality of antenna members 51 are closely arranged at the first interval, and the plurality of antenna members φ 5 1 are arranged at the second interval. (Adjacent sections 52 are placed between each other) alternately in the aforementioned gamma direction. Further, the lifting support portion 4 of the dielectric window member 3 is the above-described sparse region 53 which is provided between the adjacent segments 52 so as not to interfere with the antenna members 51 which are mostly arranged. As shown in FIG. 2, the segment 52 is provided with a horizontal region 54 extending in the X direction opposite to the mounting table 27, and a region 55 on both outer sides of the horizontal region 54 in the longitudinal direction (the X direction) of the segment 52. In other words, both end portions of the # segment 52 in the longitudinal direction are vertically raised toward the upper side, for example. The horizontal area 54 of the above-described section 52 is set to cover the length of the glass substrate G placed on the mounting table 27 in the X direction as shown in Figs. 1 to 3 . Further, the segment 52 is disposed in the entire processing container 2 so as to cover the length of the glass substrate G in the Y direction. In this example, the central portion of the length of the plasma generating chamber 22 in the X direction coincides with the central portion of the length of the glass substrate G placed on the mounting table 27 in the X direction, and can be combined with the aforementioned section 52. The respective sizes or installation positions of the plasma generating chamber 22 or the mounting table 27, the -15-201034521 section 52 are set such that the central portions of the horizontal regions 54 in the longitudinal direction coincide with each other. One end side of the antenna 5 is connected to the high-frequency power supply unit 6 for plasma generation via the power supply side conduction circuit ό1, and the high-frequency power supply unit 6 for generating plasma is provided with an induction pot for supplying the antenna 5 to the antenna 5 The high-frequency power for generating a power-on prize, for example, a high-frequency power source for plasma generation and an integrator for high-frequency power having a frequency of 13.56 MHz. Here, the power source side conduction circuit 61 is formed such that the electrical length of the path from the connection portion with each of the segments 52 to the high-frequency power source portion 6 is formed in each segment 52 as shown in FIGS. 2 and 4 . Phase @等. Here, the electrical length is equal, and it means that the impedance of the conductive circuit 61 from the high-frequency power supply unit 6 to the connection portion of each of the segments 52 is equal, and even if the physical length of the conductive circuit 61 is equal, even if even The physical lengths are different, and the cross-sectional area of the conductive circuit 61 is also different. As a result, the impedance of the conductive circuit 61 from the high-frequency power supply unit 6 to the connection portion is equal, or an element for adjusting the impedance is also used to reconcile as will be described later. The case of impedance. In this example, the power source side conduction circuit 61 is set to have a physical length equal to 0 from the connection portion with each of the segments 52 to the high frequency power supply unit 6. 2 and 4, the power supply side conduction circuit 61 is one end side from the arrangement direction (γ direction in the figure) of the antenna member 51, and the adjacent sections 5 2A, 5 2B are first. The segment leading circuit 61a is connected, and the adjacent segments 52C, 52D are connected by the first segment guiding circuit 61b. Further, the intermediate points of the first-stage conducting circuits 61a and 61b are connected to each other by the second-stage conducting circuit 61c, and the intermediate point of the second-stage conducting circuit 61c and the high-frequency power supply unit 6 are borrowed. It is connected by the terminal guiding circuit 61d. In addition, the other end side of the antenna 5 is connected to the ground by the ground side conduction circuit 62, and a capacitance variable capacitor 7 serving as a capacitor for potential distribution adjustment is provided between the antenna 5 and the ground point. . As shown in Figs. 2 and 4, the ground-side conductive path 62 is set such that the electrical length from the connection portion with each of the segments 52 to the capacitance variable capacitor 7 is equal to each of the segments 52. In this example, the ground-side conducting circuit 62 is set to be equal in physical length from the connection portion of each of the segments 52 to the capacitance variable capacitor 7. That is, the ground side conduction circuit 62 is, for example, as shown in FIGS. 2 and 4, from the one end side of the arrangement direction (Y direction in the drawing) of the antenna member 51, and the adjacent sections 52A, 52B by the first stage The conductive circuit 62a is connected, and the next adjacent segments 52C, 52D are connected by the first conductive circuit 62b. Further, the intermediate points of the first-stage conducting circuits 62a, 62b are connected to each other by the second-stage conducting circuit 62c, and the intermediate point of the second-stage conducting circuit 62c and the capacitance variable capacitor 7 are Connected by a conductive circuit φ 62d. Further, since the physical lengths up to the capacitance variable capacitor 7 are equal, the physical lengths of the conduction paths 62 connecting the respective segments 52 and the ground point are also equal. In this case, in this example, the electrical length of the high-frequency path is set by matching the physical lengths of the high-frequency path from the high-frequency power supply unit 6 of each of the segments 52A to 52D to the ground point. The (impedance) will be equal to each other. The above-mentioned "high-frequency path" means a path from the downstream side of the integrator of the high-frequency power supply unit 6 for plasma generation to the ground point. Here, as shown in FIG. 2, the power supply side conduction circuits 6 1 a to 6 1 c and the ground side conduction -17-201034521 circuits 62 a to 62 c are horizontal guide circuits and riser guide circuits, simply speaking, The electrical lengths of the high-frequency paths between the sections 52 can be formed in an equal manner, and the adjacent sections 52 are lined with each other, and are arranged in a stepped manner in a line shape as a combination of the knockout matches. The capacitance variable capacitor 7 is provided between the junction point of each ground side conduction circuit 62 of the terminal conduction circuit 62d and the ground point, and adjusts the capacitance thereof to adjust the impedance of the antenna 5, thereby adjusting the length of the antenna 5. The potential distribution of the direction. The adjustment of this potential distribution is explained using Figs. 5 to 7 . Fig. 5 (a) is a configuration diagram when the capacitor variable capacitor 7 is not provided. In this case, the potential distribution in the longitudinal direction (X direction in the figure) of the antenna 5 at a certain point in time is formed as shown in Fig. 5 (b). rise. On the other hand, when the capacitance variable capacitor 7 is provided, the change in the potential of the position P1 on the outlet side of the high-frequency power supply unit 6 of FIG. 6(a) and the position P2 on the inlet side of the capacitance variable capacitor 7 is as follows. In the state in which the phase shift is 90 degrees from each other as shown in Fig. 7, the distribution of the potential Vp (peak enthalpy of high frequency) at the moment of the longitudinal direction of the antenna 5 is formed as shown in Fig. 6(b) and Q. That is, the potential of the position P2 is negative corresponding to the capacitance of the capacitance variable capacitor 7, and therefore the potential distribution of the position P1 to the position P2 has a zero point on the way. Therefore, by adjusting the capacitance of the capacitance variable capacitor 7, the zero point of the potential Vp can be freely set in the longitudinal direction of the antenna 5. In this example, the zero point is adjusted to be located at the center position P3 in the longitudinal direction of the antenna 5. By adjusting the potential distribution in the longitudinal direction of the antenna 5 in this manner, the plasma density in the longitudinal direction of the antenna can be controlled. Referring back to Fig. 1, in the processing container 2, the opening portion 23 of the glass substrate G which is carried out by the plasma generating chamber 22 of the processing container 2 by the side peripheral wall -18 - 201034521 is set by the gate valve 24 The opening and closing is free, and the exhaust passage 25 is connected to the bottom thereof, and the other end side of the exhaust passage 25 is connected to the vacuum pump 26 serving as a vacuum exhausting means via the exhaust amount adjusting portion 26a. Further, the plasma processing apparatus is configured to be controlled by a control unit. This control unit is composed of, for example, a computer, and includes a CPU, a program, and a memory. Commands (steps) are programmed in the above-described program to enable control signals to be transmitted from the control unit to the respective sections of the plasma processing apparatus, and to perform predetermined plasma processing. The program is stored in a computer memory medium such as a floppy disk, a compact disc, a hard disk, a magnetic disk (MO), and the like, and is installed in a computer. Next, the action of the above embodiment will be described. First, the gate valve 24 is opened, and the glass substrate G is carried into the plasma generation chamber 22 from the opening 23 by an external transfer means (not shown), and is placed on the mounting table 27 via a lift pin (not shown). Next, the processing gas is supplied from the processing gas supply system 45 to the plasma generation chamber 22. On the other hand, the inside of the plasma generation chamber 22 is evacuated to a predetermined degree of vacuum by the vacuum pump φ 26 via the exhaust passage 25. In addition, the antenna room 21 is set to an atmospheric environment. Next, high frequency power of, for example, 13.5 6 MHz is supplied from the high frequency power supply unit 6 to the antenna 5. Thereby, an induced electric field is generated around the antenna 5, and the processing gas in the processing container 2 is plasma-generated (activated) by the energy of the electric field to generate plasma. Then, high-frequency power of, for example, 3.2 MHz is supplied from the bias high-frequency power supply unit 29 to the mounting table 27, whereby ions in the plasma are introduced to the mounting table 27 side, and the glass substrate G is etched. Here, the four segments 52 composed of the antenna member 51 are connected to each other as a combination of a supply point of high-frequency power and a ground point such as a so-called tournament as described in -19-201034521. Since the impedances of the high-frequency paths of the respective segments 52 are equal, when the processing container 2 is viewed in the Y direction (the direction in which the antennas 5 are arranged), the potential of each of the segments 52 forms the same potential. The segment 52 is a plurality of linear antenna members 51. In this example, four antenna members 51 are used. When viewed in detail, the outer two antenna members 51 and the two inner antenna members 51 have the length of the path. The segments 52 are different. Therefore, each of the sections 52 is not in the same potential when viewed in the aforementioned arrangement direction, and has a slight potential distribution, but the pattern of this potential distribution is uniform between the sections 52. However, if the arrangement interval of the antenna member 51 is the same in the entire antenna 5, the plasma density will be a mountain-shaped distribution with a low center at both ends as shown in Fig. 8(b). In other words, the entire antenna member 51 is provided on the lower side of the antenna member 51 at the center portion, and the plasma density is increased to the maximum, and the plasma density is gradually decreased as the electric blade density is gradually decreased toward the outer side. distributed. Therefore, as for the entire antenna 5, the difference in plasma density becomes large, and the in-plane uniformity of the plasma density becomes low. On the other hand, in the present embodiment, the interval L2 between the adjacent segments 52 is wider than the interval L1 between the antenna members 51 in the segment 52, and the dense portion region 52 and the sparse portion region 53 are alternately formed. As shown in Fig. 8(a), the density of the plasma is a mountain-shaped distribution in each of the segments 52, so that the plasma density distribution along the surface direction of the object to be processed is high in uniformity. That is, in the dense portion region 52, the plasma density is increased at the position corresponding to the central antenna member 51, but the change in the plasma density is small. -20- 53 201034521 The 16th is the electrical conductivity of the component» for 9 days (X will be short and the dense area 52 and the sparse area will be alternately arranged in the above-mentioned arrangement direction, so the plasma with a small density change will be As a result, the in-plane uniformity of the plasma density is increased, and as a result, as seen in the longitudinal direction of the antenna 5, the length of the antenna member 51 is as shown in the above-described (b). The potential of the central portion is zero, and the potential distribution is bilaterally symmetric with respect to this zero point. In this case, the capacitive coupling is increased at the periphery of the antenna member 51, the inductive coupling is small, and the potential φ cloth is the central portion of the length direction of the antenna member 51. It is bilaterally symmetrical, so the plasma density distribution is as shown in Fig. 6(c), and as a result, a mountain-shaped distribution in which the central plasma density becomes high is formed. In contrast, the configuration in which the capacitor is not provided is as shown in Fig. 5(c). It is shown that the plasma density on the grounding point side where the potential Vp is low is high, and the plasma density on the high-frequency source portion 6 side is low, and the plasma density of one side in the longitudinal direction of the antenna member 51 is high, and the other side is high. Pulp density The degree is low, and thus the uniformity is lowered. From the above, in the processing container 2, the X direction (the longitudinal direction of the antenna member 51), or the Y direction (the direction of the line member 51) is processed along the line. The uniformity of the potential distribution of the body plane direction and the Y plane is high, so the uniformity of the electric field is improved. Therefore, the in-plane uniformity of the plasma density becomes high, and plasma treatment with high uniformity is performed in the treated body. In such a plasma processing apparatus, since the antenna 5 is configured by the linear antenna member 51, the length of the antenna member 51 is reduced as compared with the helical antenna, and the impedance can be lowered. Therefore, the antenna potential can be easily made compared to when a helical antenna is used. Further, as described above, by setting the potential distribution by the impedance of each segment 52 - 21 - 201034521 and the capacitance variable capacitor 7, the potential VP at the central portion in the longitudinal direction of the antenna member 51 can be made zero. Further, the dense portion region 5 2 and the sparse portion region 53 in which the arrangement intervals of the antenna members 51 are alternately formed can generate a plasma having high uniformity in the arrangement direction and the longitudinal direction of the antenna member 51 in the processing container 2, and can be The treatment body is subjected to plasma treatment with high in-plane uniformity. Further, by making the supply points of the high-frequency power and the grounding points of the respective sections 52 lined together as in the combination diagram of the so-called knockout, it is extremely effective to make the impedance of each of the sections 52 uniform by a simple configuration. Further, in the present invention, since the partition portion 34 of the dielectric window member 3 is formed to be orthogonal to the antenna member 51 of the antenna 5, the occurrence of induced current in the partition portion 34 is suppressed, and the radiation from the antenna 5 is suppressed. The induced electric field passes through the plasma generation chamber 22 smoothly and in vain. Further, a plurality of partition portions 34 are provided to form a plurality of divided regions, and the dielectric members 32 are disposed in the divided regions. Therefore, the dielectric members 32 provided in one divided region can be miniaturized. Further, the dielectric member 32 that is miniaturized is supported by the beam portion 31 composed of the partition portion 34 and the outer frame portion 33, so that the plasma generation chamber 22 and the atmospheric environment in which the Q is evacuated in an airtight region When between the antenna rooms 21, sufficient strength can be ensured. Further, since the processing gas is supplied to the plasma generation chamber 22 via the partition portion 34 of the dielectric window member 3, and the dielectric window member 3 also has the processing gas supply means, the constituent members of the plasma processing apparatus can be reduced. The simplification of the device is conducive to the reduction of manufacturing costs. Next, another configuration example of the antenna will be described with reference to Fig. 9 . The antenna 81 having the configuration of Fig. 9(a) is provided with 2n, and in this example, there are 23 (8 -22 - 201034521) two antenna members 80 having the same diameter and the same length extending in parallel in a straight line as a group. The composition of the segment 82. In this example, the four antenna members 80 constituting the two segments 82 are arranged at equal intervals with each other at an interval L1, and the dense portion 82 in which the antenna members 80 are closely arranged is formed, and the two segments 82 and the adjacent two are adjacent. The antenna member 80 is disposed between the segments 8 2 at an interval L2 larger than the interval L1, and the sparse region 85 in which the antenna member 80 is sparsely arranged is formed. Further, each of the sections 82 is connected to the supply point of the high-frequency power of the output end of the high-frequency power supply unit 6 by the power supply side conduction circuit 83 and the ground-side conduction circuit 84, and a grounding point such as a so-called knockout line diagram. The lines are connected to each other, whereby the physical lengths of the paths from the high-frequency power source portion 6 of each of the segments 82 to the aforementioned ground point are set to be equal to each other. Further, the antenna 86 having the configuration of Fig. 9(b) is provided with 2n, and in this example, there are 22 segments 88 having a plurality of three antenna members 87 extending in parallel in a straight line and having the same physical length. The rest is configured in the same manner as the above-described antenna 5 except that the number of the antenna members 87 is different. Φ Further, in the present invention, as shown in Fig. 1A, a capacitance variable capacitor for impedance adjustment may be provided on the side of the power supply conducting circuit. In the antenna 9 of this example, for example, four segments 91A to 91D are arranged in the γ direction, and two segments 91A and 91D which are outside the power supply side of the antenna 9 are connected to each other by the power supply side conduction circuit 92 a. The path 92b is connected to the high-frequency power supply unit 6, and a capacitance variable capacitor 93A for impedance adjustment is provided between the junction of the conductive circuit 92a and the conductive circuit 92b and the high-frequency power supply unit 6. And the inner two sections 91B' 91C are connected to each other by the power supply side conduction circuit 92a, and are connected to the high frequency power supply part 6 via the conduction circuit 92d, and the conduction circuit 92c and the conductive -23-201034521 road 92d Between the junction point and the high-frequency power supply unit 6, a capacitance variable capacitor 93B for impedance adjustment is provided. On the other hand, on the ground side of the antenna 9, the outer two sections 91A' to 91D are connected to each other by the ground side conduction circuit 93a, and are grounded via the conduction path 93b, at the junction of the conduction path 93a and the conduction path 93b. Between the grounding point, a capacitor-fixed capacitor 94A for potential distribution adjustment is provided, and the two inner sections 91B and 91C are connected to each other by the ground-side conducting circuit 93c, and grounded via the conducting circuit 93d to conduct electricity. A capacitance fixed capacitor 94B for adjusting the potential distribution is provided between the junction point of the path 93c and the conduction circuit 93d and the ground point. In this example, the capacitance variable capacitors 93A and 93B are intended to change the impedance of the high-frequency path from the high-frequency power supply unit 6 to the ground point via the inner sections 91B and 91C, and the outer side via the outer side. The impedance of the aforementioned high frequency path of the segments 9 1 A, 9 1 D. For example, the capacitance of the capacitance variable capacitors 93A, 93B can be adjusted such that the impedance of the high frequency path via the outer sections 91A, 91D can be made larger than the impedance of the high frequency path via the inner sections 91B, 91C. Thereby, the high-frequency current of the section 9 1 B, 9 1 C flowing on the inner side is made larger than the high-frequency current flowing through the sections 9 1 A , 91D of the outer side, and the section 91A with respect to the outer side is performed. 91D expands the control of the in-plane distribution of the plasma density such as the plasma density of the inner sections 91B, 91C.

又，例如以使經由外側的區段91A，91D之前述高頻 路徑的阻抗能夠比經由內側的區段9 1 B，9 1 C之前述高頻 路徑的阻抗更小的方式，調整電容可變電容器93 A，93 B 201034521 ，藉此相對於外側的區段9 1 A，9 1 D可以能夠縮 區段91B，91C的電漿密度之方式調整電漿密度 布。 藉由如此利用電容可變電容器93 A、93 B來 外側的區段9 1 A，9 1 D及內側的區段9 1 B ’ 9 1 C 述高頻路徑的阻抗，可於基板的面方向在根據內 91B，91C所產生的電漿與根據外側的區段91A， φ 生的電漿之間進行電漿密度的微細控制，因此可 內分布（均一性）。在此，電容可變電容器93A 此例而言是設於內側的區段9 1 B，9 1 C與外側的 ，91D雙方，但亦可設於其中任一方。 藉由如此設置阻抗調整用的可變電容器，可 來調整前述高頻路徑的阻抗，因此該高頻路徑的 的自動度會變高。藉此，例如可提高玻璃基板G 的電場均一性，或可進行在區段的配列方向的內 φ 之間使電場分布變化之類的電場分布調整，因此 使對被處理體之電漿處理的均一性提升。 又，如圖1〇所示，只要使區段如淘汰賽的 結線，將複數的區段連接至共通的電容可變電容 在一個電容可變電容器，同時調整複數的區段之 路徑的阻抗，調整會變得容易。 又，電位分布調整用的電容器亦可設於連接 頻電源部的電源側導電路。又，電位分布調整用 亦可使用電容固定電容器或電容可變電容器的任 小內側的 的面內分 調整經由 之各個前 側的區段 9 1 D所產 更微調面 ，93B 就 區段91A 分成區段 阻抗調整 的面方向 側與外側 其結果可 線圖那樣 器，便可 前述高頻 天線與高 的電容器 何一個。 -25- 201034521 又，本發明的天線亦可設成埋設於電介體窗構件的內 部者。又，亦可使相鄰的區段彼此間的間隔L2形成比同 區段內的天線構件彼此間的間隔L1更窄，藉由構成區段 的天線構件來形成天線構件被配列成稀疏的疏部區域，藉 由相鄰的區段彼此間的天線構件來形成天線構件被配列成 緊密的密部區域。本發明的電漿處理可適用於成膜處理或 蝕刻處理、光阻劑膜的灰化處理等。 可是使用於感應耦合電漿處理裝置的天線，如已述一 @ 般是使用天線線爲平面性地卷成環狀的螺旋天線，但在處 理大型的基板時，天線的阻抗會變大，恐有不能取得高密 度的電漿之虞，因此爲了予以防止，在已述的各實施形態 是將各天線設爲直線形狀，抑制天線每一條的阻抗。但， 依直線形狀的天線構件的配列間隔，有時難以控制處理基 板的面內均一性。於是，以下一邊參照圖11 一邊說明有 關可將天線構件間變更成任意的間隔之實施形態。就此實 施形態而言，是在藉由電介體窗構件3所形成的天線室21 Q ，取代天線5，而設置天線1〇〇。 天線100是具備延伸於與電介體窗構件3的隔開部34 正交的方向之2個的天線構件101。各天線構件1〇1是彼 此設成平行，構成同形狀及同長度，且其兩端部是形成往 上方折彎的彎曲部102。而且，如圖12所示，在各彎曲區 域102b設有貫通於天線構件101的長度方向之安裝孔1〇3 〇 並且’天線室21是在天線構件101的兩端側設有與 -26- 201034521 天線構件101的伸長方向正交而水平延伸的活栓（tap) 104a，104b。因爲各活检l〇4a，l〇4b是被同樣構成，所 以若以活栓l〇4a爲代表來進行說明，則在各活栓104a是 沿著該活栓l〇4a的伸長方向來設置各個螺絲106所螺合 的多數個螺絲孔105。 天線構件101是經由彎曲部102的安裝孔103來將螺 絲106螺合（螺絲固定）於活栓104a，104b的螺絲孔105 φ ，可往活栓l〇4a，104b裝卸自如地安裝，因此可藉由選 擇螺絲孔105來自由地調整各天線構件101的Y方向（與 天線構件101正交的方向）的設置位置及各天線構件101 的間隔。 在被安裝於活栓104a，104b的天線構件101的一端 側、他端側分別連接電源側導電路1 1 1、接地側導電路 112。該等的電源側導電路111及接地側導電路112是例 如與圖2的電源側導電路6 1及接地側導電路62同樣朝向 φ 上方後彎曲而延伸於橫方向。 圖13是將天線100設爲電性等效的圖來顯示，若一 邊也參照此圖一邊進行說明，則圖1 3中1 1 3，1 1 4是分別 表示天線構件101與電源側導電路111的連接點，天線構 件1 0 1與接地側導電路1 1 2的連接點。電源側導電路i i i 是藉由：連接彼此的天線構件1 0 1之第1段的電源側導電 路111a、及從導電路Ilia的中間點連接至高頻電源部6 之第2段的電源側導電路1 1 1 b所構成。如此從高頻電源 部6到各連接點113的導電路的長度是構成相等，藉此設 -27- 201034521 定成從高頻電源部6到各連接點1 1 3的阻抗是分別形成相 等。 又，電源側導電路112是藉由：連接彼此的天線構件 101之第1段的電源側導電路112a、及經由電容可變電容 器7來連接導電路112a的中間點與接地點之第2段的電 源側導電路1 1 2b所構成。如此從各連接點1 1 4到接地點 的導電路的長度是構成相等，藉此從前述天線構件1〇1與 接地側導電路112的各連接點114到接地點的阻抗是設定 成彼此相等。並且，各天線構件1〇1的阻抗是分別設定成 相等，因此藉由各天線構件101所構成的高頻路徑的電性 長度是設定成彼此相等。 —邊參照圖14〜圖18 —邊顯示上述的天線100中，每 改變天線構件101間的距離，形成於電漿生成室22的電 漿密度分布8所變化的狀態。各圖中在圖號後附上符號（ a)者是表示天線室21之天線構件101的配置佈局的一例 ，在圖號後附上符號（b)者是表示該同圖號（a)的佈局 時之形成於電漿生成室22內的電漿密度分布8者。就各 例而言，天線構件101爲對稱位於天線室21的Y方向的 中間位置，玻璃基板G的Y方向的中間位置與天線室的Y 方向的中間位置是彼此重疊。另外，各圖14~18 (b)的電 漿密度分布8是根據後述的評價試驗所被確認的結果來顯 不 。 首先，說明有關在天線室21的中央部以比較近的距 離來設置天線構件101之圖14(a)所示的佈局時。一旦 -28- 201034521 如此天線構件1 0 1間的距離近，則2個的天線構件 如一個粗的天線構件那樣的機能，如圖1 4 ( a )所 將2個的天線構件1 01作爲一個的天線構件，以能 包圍的方式形成感應磁場110。在此所被形成的感 110是可見天線構件110成束，藉此具有比藉由一 構件110所形成的感應磁場要產生強的磁場之效果 而且，在電漿生成室22中，在天線構件101 φ 上方的中央部，電漿密度會形成最高，隨著從此中 著天線構件1 0 1的配列方向往外側，形成慢慢地電 降低的電漿密度分布8»可是，圖14(b)中的點I 是表示無具有2個天線構件101的其中一方，僅設 方的一個時所被形成的電漿密度分布。就此例而言 述般因爲2個的天線構件101具有作爲一個天線構 的機能，所以前述電漿密度分布8是形成與僅設有 此點畫線所示的天線構件101時大略同樣的電漿密 Φ 。但，相較於天線構件1 〇 1僅設置一個時，如上述 強的感應磁場，因此相較於那樣僅設置一個天線構 時，電漿生成室22的中央部的電槳密度分布8會變 圖15〜圖18是表示相較於圖14以使天線構件 夠離天線室21的中央部更遠的方式，彼此分開設 電漿密度分布8，如此天線構件1 〇 1比較分開時， 天線構件101的周圍個別形成感應磁場110。各圖 (b)中的點畫線80是表示與圖14(b)同樣一個 構件101單獨存在時所被形成的電漿密度分布者， 101猶 不般’ 夠予以 應磁場 個天線 〇 設於其 央部沿 漿密度 I線80 有另一 ，如上 件101 一個以 度分布 般形成 件 101 大。 101能 置時的 是在各 1 5〜1 8 的天線 僅設置 -29 - 201034521 一個天線構件101時，如以此點畫線80所示般’天線構 件101的下方的電漿密度高，隨著從天線構件101往橫方 向遠離，形成電漿密度變低的電漿密度分布，但實際形成 於電漿生成室22的電漿密度分布8是形成於該等各天線 部101材的電漿密度分布調和者。 而且，如該等的圖15〜圖18所示將天線構件101的安 裝位置往天線室21的周緣部側偏移，隨著天線構件1〇1 的間隔擴大，有關形成於電漿生成室22的電漿密度分布8 φ 是生成室22內的中央部的電漿密度會減少，相對的周緣 部的電漿密度會變大。例如天線構件101設於彼此較近的 位置之圖15(a)、圖16(a)是與圖14(a)的佈局時同 樣，形成如圖15(b)、圖16(b)所示般’電漿生成室 22的中央部側比周緣部側高的密度分布。天線構件1 〇 1的 間隔比該等圖15(a)、圖16(a)的佈局更離開的圖17 (a)的佈局是如圖17(b)所示在電漿生成室22形成大 致均一的電漿密度分布8，天線構件101的間隔更離開的 0 圖18(a)的佈局是如圖18(b)所示形成電漿生成室22 的周緣部側比中央部側高的密度分布。Further, for example, the impedance of the high-frequency path passing through the outer sections 91A, 91D can be adjusted to be smaller than the impedance of the high-frequency path via the inner sections 9 1 B, 9 1 C. Capacitors 93 A, 93 B 201034521 , whereby the plasma density cloth can be adjusted in a manner that narrows the plasma density of the segments 91B, 91C with respect to the outer segments 9 1 A, 9 1 D. By using the capacitance variable capacitors 93 A, 93 B as described above, the outer sections 9 1 A, 9 1 D and the inner section 9 1 B ' 9 1 C describe the impedance of the high-frequency path in the plane direction of the substrate. The plasma density is finely controlled between the plasma generated according to the inner portions 91B and 91C and the plasma generated according to the outer segments 91A and φ, so that it can be distributed internally (uniformity). Here, the capacitance variable capacitor 93A is, for example, the inner section 9 1 B, 9 1 C and the outer side, 91D, but may be provided in either one. By providing the variable capacitor for impedance adjustment in this manner, the impedance of the high-frequency path can be adjusted, so that the degree of automation of the high-frequency path becomes high. Thereby, for example, the electric field uniformity of the glass substrate G can be improved, or the electric field distribution such as the electric field distribution can be changed between the inner φ of the arrangement direction of the segments, so that the plasma treatment of the object to be processed can be performed. Uniformity is improved. Moreover, as shown in FIG. 1A, as long as the segment is like a knockout line, the plurality of segments are connected to a common capacitor variable capacitor in a capacitor variable capacitor, and the impedance of the path of the plurality of segments is adjusted, and the adjustment is performed. It will become easier. Further, the capacitor for adjusting the potential distribution may be provided in a power supply side conduction circuit connected to the frequency power supply unit. Further, for the potential distribution adjustment, the in-plane division of the inner side of the capacitor fixed capacitor or the capacitor variable capacitor may be used to adjust the fine-tuning surface produced by each of the front side sections 9 1 D, and the section 93A is divided into sections. The surface side of the segment impedance adjustment and the outer side of the result can be line graphed, and the high frequency antenna and the high capacitor can be used. -25- 201034521 Further, the antenna of the present invention may be embedded in the interior of the dielectric window member. Further, the interval L2 between adjacent segments may be formed to be narrower than the interval L1 between the antenna members in the same segment, and the antenna members constituting the segments are arranged to be sparsely sparse. In the portion region, the antenna member is formed into a dense dense portion region by the antenna members between the adjacent segments. The plasma treatment of the present invention can be applied to a film formation treatment or an etching treatment, an ashing treatment of a photoresist film, and the like. However, the antenna used in the inductively coupled plasma processing apparatus, as described above, is a helical antenna that is planarly wound into a ring shape using an antenna wire, but when processing a large substrate, the impedance of the antenna becomes large, fearing Since it is impossible to obtain a high-density plasma, in order to prevent it, in each of the embodiments described above, each antenna is formed in a linear shape, and the impedance of each of the antennas is suppressed. However, it is sometimes difficult to control the in-plane uniformity of the processing substrate depending on the arrangement interval of the linear antenna members. Therefore, an embodiment in which the distance between the antenna members can be changed to an arbitrary interval will be described below with reference to Fig. 11 . In this embodiment, the antenna 1 is provided instead of the antenna 5 by the antenna chamber 21 Q formed by the dielectric window member 3. The antenna 100 is provided with two antenna members 101 extending in a direction orthogonal to the partition portion 34 of the dielectric window member 3. Each of the antenna members 1〇1 is formed in parallel with each other so as to have the same shape and the same length, and both end portions thereof are bent portions 102 which are bent upward. Further, as shown in FIG. 12, in each of the curved regions 102b, a mounting hole 1〇3 贯通 that penetrates the longitudinal direction of the antenna member 101 is provided and the antenna housing 21 is provided on both end sides of the antenna member 101 and -26- 201034521 Taps 104a, 104b in which the extending direction of the antenna member 101 is orthogonal and horizontally extended. Since each biopsy l4a, l4b is configured in the same manner, if each of the stopcocks 10a is represented by a stopcock, each of the spokes 104a is provided along the direction of extension of the stopcock 104a. A plurality of screw holes 105 that are screwed together. The antenna member 101 is screwed (screwed) to the screw holes 105 φ of the stop bolts 104a, 104b via the mounting holes 103 of the bending portion 102, and can be detachably mounted to the stoppers 104a, 104b, thereby The screw hole 105 is selected to adjust the installation position of the Y direction (the direction orthogonal to the antenna member 101) of each of the antenna members 101 and the interval between the antenna members 101. The power supply side conduction circuit 1 1 1 and the ground side conduction circuit 112 are connected to the one end side and the other end side of the antenna member 101 attached to the stopcocks 104a and 104b, respectively. The power supply side conduction circuit 111 and the ground side conduction circuit 112 are bent in the same direction as φ above and then extended in the lateral direction in the same manner as the power supply side conduction circuit 61 and the ground side conduction circuit 62 of Fig. 2 . FIG. 13 is a diagram showing the antenna 100 as an electrical equivalent, and as will be described with reference to this figure, in the case of FIG. 13, 1 1 3, 1 1 4 denotes an antenna member 101 and a power supply side conduction circuit, respectively. The connection point of 111, the connection point of the antenna member 110 and the ground side conduction circuit 1 1 2 . The power supply side conduction circuit iii is connected to the power supply side of the second stage of the high frequency power supply unit 6 by the power supply side conduction circuit 111a of the first stage of the antenna elements 110 connected to each other and the intermediate point from the conduction path Ilia. The conductive circuit 1 1 1 b is constructed. Thus, the lengths of the conductive circuits from the high-frequency power supply unit 6 to the respective connection points 113 are equal, and it is assumed that the impedances from the high-frequency power supply unit 6 to the respective connection points 1 1 3 are formed to be equal to each other. Further, the power source side conduction circuit 112 is connected to the power supply side conduction circuit 112a of the first stage of the antenna member 101 and the intermediate point of the conduction path 112a and the second stage of the ground point via the capacitance variable capacitor 7. The power supply side conduction circuit 1 1 2b is constructed. Thus, the lengths of the conducting circuits from the respective connection points 1 1 4 to the grounding points are equal, whereby the impedances from the respective connection points 114 of the antenna member 1〇1 and the ground-side conducting circuit 112 to the grounding point are set to be equal to each other. . Further, since the impedances of the respective antenna members 1〇1 are set to be equal, the electrical lengths of the high-frequency paths formed by the respective antenna members 101 are set to be equal to each other. Referring to Figs. 14 to 18, the above-described antenna 100 is shown in a state in which the plasma density distribution 8 formed in the plasma generating chamber 22 is changed every time the distance between the antenna members 101 is changed. In each figure, the symbol (a) is attached to the figure number to indicate an arrangement layout of the antenna member 101 of the antenna room 21, and the symbol (b) is attached to the figure number to indicate the same figure number (a). The plasma density distribution formed in the plasma generation chamber 22 at the time of layout is eight. For each of the examples, the antenna member 101 is symmetrically located at an intermediate position in the Y direction of the antenna chamber 21, and the intermediate position of the glass substrate G in the Y direction and the intermediate position of the antenna chamber in the Y direction overlap each other. Further, the plasma density distribution 8 of each of Figs. 14 to 18 (b) is revealed based on the results confirmed by the evaluation test described later. First, a case will be described in which the layout shown in Fig. 14(a) of the antenna member 101 is provided at a relatively close distance in the central portion of the antenna chamber 21. Once -28-201034521 is such that the distance between the antenna members 101 is close, the two antenna members have the same function as a thick antenna member, as shown in Fig. 14 (a), the two antenna members 101 are taken as one The antenna member forms an induced magnetic field 110 in a manner that can be surrounded. The sensation 110 formed here is that the visible antenna member 110 is bundled, thereby having the effect of generating a strong magnetic field than the induced magnetic field formed by a member 110, and in the plasma generating chamber 22, at the antenna member In the central portion above 101 φ, the plasma density is formed to the highest, and the plasma density distribution which is gradually reduced electrically is formed as the direction from the arrangement direction of the antenna member 10 1 is formed. 8» However, Fig. 14(b) The point I in the middle is a plasma density distribution which is formed when only one of the two antenna members 101 is provided and only one of the two antenna members 101 is provided. In this case, since the two antenna members 101 have a function as one antenna structure, the plasma density distribution 8 is formed into a plasma which is substantially the same as when only the antenna member 101 shown by the dotted line is provided. Dense Φ. However, when only one antenna element 1 〇1 is provided, as in the above-described strong induced magnetic field, the electric blade density distribution 8 at the central portion of the plasma generating chamber 22 is changed when only one antenna configuration is provided. 15 to 18 are diagrams showing the manner in which the antenna members are separated from each other by the center portion of the antenna chamber 21 in comparison with FIG. 14 , and the plasma density distribution 8 is divided into two, so that the antenna members 1 〇 1 are relatively separated, the antenna member An induced magnetic field 110 is formed separately around the 101. The dotted line 80 in each figure (b) is a plasma density distribution formed when a member 101 alone exists as in Fig. 14(b), and 101 is not enough to provide a magnetic field antenna. The central portion has another one along the pulp density I line 80, and the upper member 101 is formed to have a large size by a degree distribution. 101 can be set in time when the antennas of each of the 5 5 to 18 are only -29 - 201034521. When one antenna member 101 is provided, as shown by the dotted line 80, the plasma density below the antenna member 101 is high, with The plasma density distribution in which the plasma density is lowered is formed from the antenna member 101 in the lateral direction, but the plasma density distribution 8 actually formed in the plasma generation chamber 22 is a plasma formed in the respective antenna portions 101. Density distribution blender. Further, as shown in FIG. 15 to FIG. 18, the mounting position of the antenna member 101 is shifted toward the peripheral edge portion side of the antenna chamber 21, and is formed in the plasma generating chamber 22 as the interval between the antenna members 1〇1 is enlarged. The plasma density distribution 8 φ is such that the plasma density in the central portion in the generation chamber 22 is reduced, and the plasma density in the peripheral portion is increased. For example, FIG. 15(a) and FIG. 16(a) in which the antenna members 101 are disposed at positions close to each other are formed as shown in FIGS. 15(b) and 16(b) as in the case of the layout of FIG. 14(a). The density distribution of the central portion side of the plasma generating chamber 22 is higher than that of the peripheral portion side. The layout of the antenna member 1 〇1 is spaced apart from the layout of Figs. 15(a) and 16(a), and the layout of Fig. 17(a) is formed in the plasma generation chamber 22 as shown in Fig. 17(b). The uniform plasma density distribution 8 and the interval at which the antenna member 101 is further separated is 0. The layout of Fig. 18(a) is such that the peripheral portion side of the plasma generating chamber 22 is formed to have a higher density than the central portion side as shown in Fig. 18(b). distributed.

如此可變更天線構件1〇1的間隔之天線1〇〇，是在調 整2個天線構件101的間隔來進行處理之下，可控制形成 於電漿生成室22內的各部之電漿密度分布。例如依氣體 的種類或氣體的供給量等的各處理條件，雖電漿生成室22 內的電漿密度分布會有變化，但在如此變更處理條件時因 爲在天線100可變更天線構件101的位置，對玻璃基板G -30- 201034521 進行均一性高的處理，所以有利。 並且，在可變更天線構件的位置之構成時，天線構件 101的個數並非限於2個。圖19是表示將天線構件101設 爲4個時的天線120的立體圖，圖20是將天線120設爲 電性等效的圖來顯示者。此天線120是由天線構件101的 配列方向來看，第1個及第2個的天線構件101會構成一 個的區段（密部區域）121，第3個及第4個的天線構件 0 會構成一個的區段121。在圖19、圖20中，針對與天線 100同樣構成之處附上相同的符號來顯示。 天線構件1 0 1是分別經由電源側導電路1 23來連接至 高頻電源部6，經由接地側導電路1 24來連接至接地點。 圖20中125是電源側導電路123與各天線構件101的連 接點，圖中126是接地側導電路124與各天線構件101的 連接點。 電源側導電路123及接地側導電路124是與其他的各 # 實施形態同樣連結相鄰的區段121彼此間而構成如決定淘 汰賽的組合之線圖狀。具體而言，在電源側導電路123是 第2段的導電路123b會連接彼此連接同區段121的天線 構件101的第1段的導電路123a的中間點彼此間，第3 段的導電路123c會連接該第2段的導電路123b的中間點 與高頻電源部6。如此配線來使從高頻電源部6到各天線 構件101的導電路的長度形成相等，而設定成各個導電路 的各阻抗會形成相等。 並且，在接地側導電路124也是第2段的導電路12 4b -31 - 201034521 會連接彼此連接同區段〗21的天線構件101的第1段的導 電路124a的中間點彼此間’第3段的導電路124c會連接 該第2段的導電路12 4b的中間點與高頻電源部6。如此配 線來使從各天線構件1 〇 1到接地點的導電路的長度形成相 等，而將各個導電路的阻抗設定成相等。藉由如此構成各 導電路，可與已述的各實施形態同樣’將各高頻路徑的電 性長度設定成彼此相等。 在如此構成的天線120亦可自由自在地調整構成同區 0 段121的天線構件101的間隔及構成相異的區段121的天 線構件1 0 1的間隔，因此可控制形成於電漿生成室2 2的 電漿密度分布。又，如已述般藉由使天線構件丨〇1接近’ 可增強所被形成的感應磁場，取得高的蝕刻速率，因此可 在相異的區段121間及同區段121內調整天線構件101的 位置，而如此取得高的蝕刻速率。 又，天線構件的間隔亦可自動調整。圖21(a) ( b ) 是分別表示如此的天線130的平面、側面。若以和天線 0 100的差異點爲中心來說明此天線130，則2個天線構件 101的兩端是分別連接至驅動部131。此驅動部131是例 如在天線室2 1內沿著延伸於天線構件1 0 1的配列方向的 導軌132來構成移動自如。電源側導電路111及接地側導 電路112的電容可變電容器7的上游側是以不會妨礙天線 構件101的移動之方式，藉由具有可撓性的配線來構成。 —邊參照圖22 —邊說明有關設於具備此天線13〇的 電漿處理裝置之控制部的構成的一例。圖中的控制部140 -32- 201034521 是具備匯流排141，在匯流排141連接CPU 142與處方儲 存部143。在處方儲存部143是記憶有針對供給至處理容 器2的氣體種類或氣體流量等來設定的複數的處理方式， 該等各處理方式亦包含天線構件1 〇 1的間隔設定。 例如若使用者經由未圖示的選擇手段（藉由鍵盤等所 構成）來進行處理方式的選擇，則會藉由CPU 142來從處 方儲存手段143讀出其選擇的處理方式。而且，從控制部 φ 140往電漿處理裝置的驅動部131輸出對應於該被讀出的 處理方式之控制信號。接受控制信號的驅動部131是如圖 2 1 ( a )箭號所示般移動，控制成天線構件1 0 1的間隔能 夠形成被該選擇的處理方式所設定的間隔，被接著選擇的 處理方式所設定的氣體會同樣以被該處理方式所設定的流 量來供給，進行處理。 就前述電漿處理裝置而言，當基板G連續搬送至處理 容器2時，例如可按基板G的各批進行處理方式的選擇來 φ 控制天線構件1〇1的間隔。又，處理方式亦可如圖23所 示般設定成按照製程的時間帶來變化天線構件101的間隔 ，或亦可在1片的基板G的處理中，變化天線構件101的 間隔來進行電漿處理。 在如此天線構件移動時亦可如圖1 0所示般安裝用以 調整各區段的阻抗之電容器。 (評價試驗） 利用具備天線100的電漿處理裝置來進行用以調查電 -33- 201034521 漿密度分布的評價試驗。在每個試驗分別使天線構件101 間的距離變化，而對光阻劑塗佈於表面的基板G進行電漿 處理，觀察所被形成的電漿的同時，調查處理後在基板G 中天線的配列方向的光阻劑的灰化速率。基板G的處理條 件是電漿生成室22內的壓力爲lOmTorr，來自高頻電源 部6的供給電力爲2000W。 在天線室21，由天線構件101的配列方向來看，若將 來自基板的中央部之端部爲止的距離設爲L，則天線構件 101間的距離，在評價試驗1是約1/3 L，在評價試驗2是 約2/3 L，在評價試驗3是約L，在評價試驗4是約4/3 L， 在評價試驗5是約2L。在實施形態所說明的圖14(a)〜 圖19(a)是表示各評價試驗1~5的天線構件101的佈局 。各基板G的灰化速率的測定位置是從基板G的中心部 ，沿著Y方向（天線構件的配列方向）來往基板G的一 端側及另一端側之任意的位置。 朝基板G之處理中的電漿的觀察結果，在評價試驗1 、2，電漿是在電漿生成室22的中央部強，在周緣部弱。 在評價試驗3，電漿是電漿生成室22的中央部比周緣部若 干強，在評價試驗4，在中央部與周緣部分別均一性高。 在評價試驗5，電漿是在電漿生成室22的中央部弱，在周 緣部強。 -34- 201034521 【表1】 評價試驗1 評價試驗2評價試驗3評價試驗4 評僭試驗5 測定位置 灰化速率(單位:nm/min) -乙 13 0 116 10 3 113 12 2 —2/3 L 18 2 14 2 12 6 12 1 10 7 一 1/3 L 2 2 8 17 1 13 7 12 1 9 4 0 2 4 1 17 7 13 7 12 2 8 8 + 1 /3 L 2 13 17 7 13 7 12 2 8 8 + 2/3 L 17 9 13 7 12 0 118 10 5 + L 13 0 10 7 10 4 10 1 12 4 上述的表1是表示在評價試驗1〜5中，在基板G的各 φ 部所被測定的灰化速率，圖24 ( a)〜圖26 ( e)是將該表 設爲曲線圖來表示者。測定位置設將基板的中心部設爲〇 ，分別取從其中心部到基板的一端側及另一端側的周緣部 爲止的距離來表示，分別對一端側的距離附上+的符號， 對另一端側的距離附上-的符號。此灰化速率越高，則表 示其上方的電漿密度越高。在評價試驗1〜3是形成基板G 的中央部的灰化速率比周緣部的灰化速率更高之凸形的曲 線圖的分布，在評價試驗4是形成基板G的中央部的灰化 φ 速率與周緣部的灰化速率大槪均一的平形的曲線圖的分布 。而且，在評價試驗5是形成周緣部的灰化速率比中央部 的灰化速率更高的凹形的曲線圖分布。 由評價試驗1〜5的結果顯示藉由控制天線構件101間 的距離，可控制電漿生成室22內的電漿密度分布，控制 基板的面內之灰化速率。並且，在使天線構件1〇1間的距 離最接近的評價試驗1是其天線構件1〇1的下方的基板中 央部的灰化速率特高，比其他的評價試驗的天線構件101 的下方側的灰化速率更高。由此顯示在使天線構件101接 -35- 201034521 近配置時，可提高其周圍的電漿密度的分布，取得高的灰 化速率。評價試驗1〜5雖是調查光阻劑的灰化速率’但在 蝕刻中也同樣藉由控制天線構件1 〇 1間的距離，明顯可控 制電漿生成室22內的電漿密度分布’控制基板的面內之 蝕刻速率。以上，說明有關可將天線構件間變更成任意的 間隔之實施形態，但亦可爲將上述實施形態的天線構件置 換成複數的天線構件所並聯的區段，將該等區段間變更成 任意的間隔之構成。 【圖式簡單說明】 圖1是表示本發明之一實施形態的電漿處理裝置的縱 剖面圖。 圖2是表示前述電漿處理裝置之一部分的槪略立體圖 〇 圖3是表示設於前述電漿處理裝置之天線與電介體窗 構件的平面圖、及電介體窗構件的剖面圖。 圖4是表示設於前述電漿處理裝置之天線與電介體窗 構件的平面圖、及導電路的連接圖。 圖5是表示天線的電位與高頻路徑上的位置的關係特 性圖、及電漿密度與高頻路徑上的位置的關係之特性圖。 圖6是表示天線的電位與高頻路徑上的位置的關係特 性圖、及電漿密度與高頻路徑上的位置的關係之特性圖。 圖7是表示天線的電位的時間變化之特性圖。 圖8是表示天線構件的配列方式與電漿密度的關係之 -36- 201034521 特性圖。 圖9是表示天線的其他構成例的平面圖。 圖10是表示天線的其他例的平面圖。 圖1 1是表示天線的其他例的立體圖。 圖12是表示構成前述天線的天線構件的詳細立體圖 〇 圖13是表示前述天線的導電路的槪略圖 φ 圖14是表示前述天線構件的配置與所形成的電漿密 度分布的關係之說明圖。 圖15是表示前述天線構件的配置與所形成的電漿密 度分布的關係之說明圖。 圖16是表示前述天線構件的配置與所形成的電漿密 度分布的關係之說明圖。 圖17是表示前述天線構件的配置與所形成的電漿密 度分布的關係之說明圖。 圖18是表示前述天線構件的配置與形成的電漿密度 分布的關係之說明圖。 圖19是表示天線的另外其他例的立體圖。 圖20是表示前述天線的導電路的槪略圖。 圖21是表示天線的另外其他例的平面圖及側面圖。 圖22是表示包含前述天線的電漿處理裝置的槪略構 成圖。 圖23是表示前述電漿處理裝置的處方之一例的說明 圖。 -37- 201034521 圖24是表示評價試驗的灰化速率的分布圖表。 圖25是表示評價試驗的灰化速率的分布圖表。 圖26是表示評價試驗的灰化速率的分布圖表。 圖27是表示與以往的直線狀的天線構件之高頻電源 部的連接關係的平面圖。 【主要元件符號說明】 2 :處理容器 2 1 :天線室 22 :電漿生成室 3 :電介體窗構件 31 :樑部 32 :電介體構件 3 3 :外框部 34 :隔開部 4 :吊起支持部 4 1 :通流路 42 :處理氣體室 43 :氣體供給孔 5，1 0 0 :天線 5 1，1 0 1 :天線構件 52 :區段 5 3 :疏水區域 5 4 :水平區域 -38- 201034521 6 :高頻電源部 6 1 :電源側導電路 62 :接地側導電路 7、71 :電容可變電容器 1 3 1 :驅動部 140 :控制部The antenna 1A in which the interval between the antenna members 1 and 1 can be changed in this manner is controlled by adjusting the interval between the two antenna members 101, and the plasma density distribution of each portion formed in the plasma generating chamber 22 can be controlled. For example, the plasma density distribution in the plasma generation chamber 22 varies depending on the processing conditions such as the type of the gas or the supply amount of the gas. However, the position of the antenna member 101 can be changed in the antenna 100 when the processing conditions are changed as described above. It is advantageous to treat the glass substrate G -30-201034521 with high uniformity. Further, when the configuration of the position of the antenna member can be changed, the number of the antenna members 101 is not limited to two. Fig. 19 is a perspective view showing the antenna 120 when the antenna member 101 is provided in four, and Fig. 20 is a view showing the antenna 120 as an electrical equivalent. When the antenna 120 is viewed from the direction in which the antenna member 101 is arranged, the first and second antenna members 101 constitute one segment (dense region) 121, and the third and fourth antenna members 0 A section 121 constituting one. In Figs. 19 and 20, the same components as those of the antenna 100 are denoted by the same reference numerals. The antenna member 101 is connected to the high-frequency power supply unit 6 via the power supply side conduction circuit 1 23, and is connected to the ground point via the ground side conduction circuit 124. In Fig. 20, reference numeral 125 denotes a connection point between the power supply side conduction circuit 123 and each of the antenna members 101, and 126 in the figure is a connection point between the ground side conduction circuit 124 and each of the antenna members 101. The power supply side conduction circuit 123 and the ground side conduction circuit 124 are connected to each other in the same manner as the other embodiments, and form a line graph in which a combination of the squad is determined. Specifically, the power supply side conduction circuit 123 is the second stage of the conduction circuit 123b that connects the intermediate points of the first stage of the conductive circuit 123a of the antenna member 101 connected to the same section 121, and the third stage of the conduction circuit 123c connects the intermediate point of the second conductive circuit 123b to the high-frequency power supply unit 6. The wiring is so wired that the lengths of the conductive circuits from the high-frequency power supply unit 6 to the respective antenna members 101 are equal, and the impedances of the respective conductive circuits are set to be equal. Further, the grounding-side conducting circuit 124 is also the second-stage conducting circuit 12 4b - 31 - 201034521 which connects the intermediate points of the first-stage conductive circuits 124a of the antenna members 101 connected to the same segment 21 to each other. The pilot circuit 124c of the segment is connected to the intermediate point of the second conductive circuit 12b and the high frequency power supply unit 6. The wiring is so arranged that the lengths of the conducting circuits from the respective antenna members 1 〇 1 to the ground point are equalized, and the impedances of the respective conducting circuits are set equal. By configuring the respective conductive circuits in this manner, the electrical lengths of the respective high-frequency paths can be set to be equal to each other as in the above-described respective embodiments. The antenna 120 thus configured can freely adjust the interval between the antenna members 101 constituting the same region 0 segment 121 and the interval between the antenna members 110 which constitute the different segments 121, and thus can be controlled to be formed in the plasma generation chamber. 2 2 plasma density distribution. Moreover, as described above, by making the antenna member 丨〇1 close to 'enhance the induced magnetic field to be formed, a high etching rate is obtained, so that the antenna member can be adjusted between the different sections 121 and the same section 121. The position of 101, and thus achieve a high etch rate. Moreover, the spacing of the antenna members can also be automatically adjusted. 21(a) and (b) show the plane and the side surface of the antenna 130, respectively. If the antenna 130 is described centering on the difference from the antenna 0 100, both ends of the two antenna members 101 are connected to the driving portion 131, respectively. The drive unit 131 is configured to be movable in the antenna chamber 21 along a guide rail 132 extending in the direction in which the antenna member 110 is arranged. The upstream side of the capacitance variable capacitor 7 of the power supply side conduction circuit 111 and the ground side conduction circuit 112 is constituted by a flexible wiring so as not to hinder the movement of the antenna member 101. An example of the configuration of the control unit provided in the plasma processing apparatus including the antenna 13A will be described with reference to Fig. 22 . The control unit 140-32-201034521 in the figure is provided with a bus bar 141, and the CPU 142 and the prescription storage unit 143 are connected to the bus bar 141. The prescription storage unit 143 stores a plurality of processing methods for setting the gas type or gas flow rate supplied to the processing container 2, and the respective processing methods also include the interval setting of the antenna member 1 〇 1. For example, if the user selects a processing mode via a selection means (a keyboard or the like) (not shown), the CPU 142 reads the selected processing mode from the local storage means 143. Then, a control signal corresponding to the read processing mode is output from the control unit φ 140 to the drive unit 131 of the plasma processing apparatus. The drive unit 131 that receives the control signal moves as shown by an arrow in Fig. 21 (a), and controls the interval between the antenna members 110 to form an interval set by the selected processing method, and the processing method to be selected next. The set gas is supplied and processed in the same manner as the flow rate set by the processing method. In the plasma processing apparatus described above, when the substrate G is continuously conveyed to the processing container 2, for example, the interval of the antenna member 1〇1 can be controlled by selecting the processing method for each batch of the substrate G. Further, as shown in FIG. 23, the processing method may be set such that the interval of the antenna member 101 varies depending on the time of the process, or the interval between the antenna members 101 may be changed during the processing of one substrate G to perform plasma processing. deal with. When the antenna member is moved as described above, a capacitor for adjusting the impedance of each segment can be mounted as shown in FIG. (Evaluation Test) An evaluation test for investigating the plasma density distribution of Electric-33-201034521 was carried out by using a plasma processing apparatus equipped with the antenna 100. The distance between the antenna members 101 was changed in each test, and the substrate G coated with the photoresist on the surface was subjected to plasma treatment to observe the formed plasma, and the antenna in the substrate G was investigated after the treatment. The ashing rate of the photoresist in the alignment direction. The processing condition of the substrate G is that the pressure in the plasma generation chamber 22 is 10 mTorr, and the power supplied from the high-frequency power supply unit 6 is 2000 W. In the antenna chamber 21, when the distance from the end of the central portion of the substrate is L, the distance between the antenna members 101 is about 1/3 L in the evaluation test 1 as seen from the direction in which the antenna member 101 is arranged. In evaluation test 2, it was about 2/3 L, in evaluation test 3, it was about L, in evaluation test 4, it was about 4/3 L, and in evaluation test 5, it was about 2 L. Figs. 14(a) to 19(a) of the embodiment show the layout of the antenna member 101 of each of the evaluation tests 1 to 5. The measurement position of the ashing rate of each of the substrates G is an arbitrary position from the center portion of the substrate G to the one end side and the other end side of the substrate G in the Y direction (the direction in which the antenna members are arranged). As a result of observing the plasma in the process of the substrate G, in the evaluation tests 1 and 2, the plasma was strong in the central portion of the plasma generating chamber 22, and weak in the peripheral portion. In the evaluation test 3, the plasma was stronger in the central portion of the plasma generating chamber 22 than in the peripheral portion, and in the evaluation test 4, the uniformity was high in the central portion and the peripheral portion, respectively. In the evaluation test 5, the plasma was weak in the central portion of the plasma generating chamber 22 and strong in the peripheral portion. -34- 201034521 [Table 1] Evaluation Test 1 Evaluation Test 2 Evaluation Test 3 Evaluation Test 4 Evaluation Test 5 Determination of position ashing rate (unit: nm/min) - B 13 0 116 10 3 113 12 2 - 2/3 L 18 2 14 2 12 6 12 1 10 7 One 1/3 L 2 2 8 17 1 13 7 12 1 9 4 0 2 4 1 17 7 13 7 12 2 8 8 + 1 /3 L 2 13 17 7 13 7 12 2 8 8 + 2/3 L 17 9 13 7 12 0 118 10 5 + L 13 0 10 7 10 4 10 1 12 4 Table 1 above shows the respective φ of the substrate G in the evaluation tests 1 to 5. The ashing rate measured in the section is shown in Fig. 24(a) to Fig. 26(e) as a graph. The measurement position is set such that the center portion of the substrate is 〇, and the distance from the center portion to the one end side of the substrate and the peripheral portion on the other end side is indicated by a distance of + on the one end side. The distance from one end is attached with the symbol of -. The higher the ashing rate, the higher the plasma density above it. In the evaluation tests 1 to 3, the distribution of the convex pattern in which the ashing rate at the central portion of the substrate G was higher than the ashing rate at the peripheral portion was higher, and in the evaluation test 4, the ashing φ at the central portion of the substrate G was formed. The distribution of the graph of the flat shape with a rate that is greater than the ashing rate of the peripheral portion. Further, in the evaluation test 5, a graph distribution of a concave shape in which the ashing rate of the peripheral portion is formed higher than the ashing rate of the central portion is formed. As a result of the evaluation tests 1 to 5, it was revealed that by controlling the distance between the antenna members 101, the plasma density distribution in the plasma generating chamber 22 can be controlled, and the in-plane ashing rate of the substrate can be controlled. Further, in the evaluation test 1 in which the distance between the antenna members 1〇1 is the closest, the ashing rate of the central portion of the substrate below the antenna member 1〇1 is extremely high, and is lower than the lower side of the antenna member 101 of the other evaluation test. The ashing rate is higher. This shows that when the antenna member 101 is placed close to -35-201034521, the distribution of the plasma density around it can be increased, and a high ashing rate can be obtained. In the evaluation tests 1 to 5, although the ashing rate of the photoresist was investigated, the plasma density distribution in the plasma generating chamber 22 was clearly controlled by controlling the distance between the antenna members 1 and 在1 during etching. The in-plane etch rate of the substrate. In the above, an embodiment in which the antenna members can be changed to an arbitrary interval is described. However, the antenna member of the above-described embodiment may be replaced by a plurality of antenna members in parallel, and the sections may be changed to any ones. The composition of the interval. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal sectional view showing a plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a schematic perspective view showing a part of the plasma processing apparatus. Fig. 3 is a plan view showing an antenna and a dielectric window member provided in the plasma processing apparatus, and a cross-sectional view of the dielectric window member. Fig. 4 is a plan view showing the antenna and the dielectric window member provided in the plasma processing apparatus, and a connection diagram of the conductive circuit. Fig. 5 is a characteristic diagram showing the relationship between the potential of the antenna and the position on the high-frequency path, and the relationship between the plasma density and the position on the high-frequency path. Fig. 6 is a characteristic diagram showing a relationship between a potential of an antenna and a position on a high-frequency path, and a relationship between a plasma density and a position on a high-frequency path. Fig. 7 is a characteristic diagram showing temporal changes in potential of an antenna. Fig. 8 is a characteristic diagram showing the relationship between the arrangement pattern of the antenna members and the plasma density, -36-201034521. Fig. 9 is a plan view showing another configuration example of the antenna. Fig. 10 is a plan view showing another example of the antenna. Fig. 11 is a perspective view showing another example of the antenna. Fig. 12 is a detailed perspective view showing an antenna member constituting the antenna. Fig. 13 is a schematic view showing a guide circuit of the antenna. Fig. 14 is an explanatory view showing a relationship between an arrangement of the antenna members and a plasma density distribution formed. Fig. 15 is an explanatory view showing the relationship between the arrangement of the antenna members and the plasma density distribution formed. Fig. 16 is an explanatory view showing the relationship between the arrangement of the antenna members and the plasma density distribution formed. Fig. 17 is an explanatory view showing the relationship between the arrangement of the antenna members and the plasma density distribution formed. Fig. 18 is an explanatory view showing the relationship between the arrangement of the antenna member and the plasma density distribution formed. Fig. 19 is a perspective view showing still another example of the antenna. Fig. 20 is a schematic diagram showing a conductive circuit of the antenna. Fig. 21 is a plan view and a side view showing still another example of the antenna. Fig. 22 is a schematic structural view showing a plasma processing apparatus including the antenna. Fig. 23 is an explanatory view showing an example of a prescription of the plasma processing apparatus. -37- 201034521 Fig. 24 is a distribution chart showing the ashing rate of the evaluation test. Fig. 25 is a graph showing the distribution of the ashing rate in the evaluation test. Fig. 26 is a graph showing the distribution of the ashing rate in the evaluation test. Fig. 27 is a plan view showing a connection relationship with a high-frequency power supply unit of a conventional linear antenna member. [Description of main component symbols] 2: Processing container 2 1 : Antenna chamber 22 : Plasma generating chamber 3 : Dielectric window member 31 : Beam portion 32 : Dielectric member 3 3 : Outer frame portion 34 : Separating portion 4 : lifting support portion 4 1 : through flow path 42 : processing gas chamber 43 : gas supply hole 5, 1 0 0 : antenna 5 1, 1 0 1 : antenna member 52: segment 5 3 : hydrophobic region 5 4 : horizontal Area -38- 201034521 6 : High-frequency power supply unit 6 1 : Power supply side conduction circuit 62 : Ground side conduction circuit 7 , 71 : Capacitance variable capacitor 1 3 1 : Drive unit 140 : Control unit

-39 --39 -

Claims (1)

201034521 七、申請專利範圍： l- 一種電漿處理裝置’係使感應電場發生於被供給 處理氣體的處理容器內，使處理氣體電漿化，對載置於處 理容器內的載置台之被處理體進行電漿處理之電漿處理裝 置’其特徵係具備： 天線’其係以能夠經由處理環境來與前述載置台對向 的方式設於該處理環境之外’包含各長度爲相等，彼此橫 著平行排列構成的複數個直線狀的天線構件； 高頻電源部，其係用以對前述天線供給高頻電力； 電源側導電路，其係用以將前述天線的一端側連接至 前述闻頻電源部； 接地側導電路，其係用以將前述天線的另一端側連接 至接地點；及 電位分布調整用的電容器，其係設於前述電源側導電 路及接地側導電路的至少一方，用以調整天線的電位分布 > 設定成從前述高頻電源部經由各天線構件到接地點爲 止的各高頻路徑的阻抗會彼此形成相等。 2. —種電漿處理裝置，係使感應電場發生於被供給 處理氣體的處理容器內，使處理氣體電漿化，對載置於處 理容器內的載置台之被處理體進行電漿處理之電漿處理裝 置，其特徵係具備： 天線，其係以能夠經由處理環境來與前述載置台對向 的方式設於該處理環境之外，包含各長度爲相等，彼此橫 -40- 201034521 著平行排列構成的複數個直線狀的天線構件； 高頻電源部，其係用以對前述天線供給高頻電力； 電源側導電路，其係用以將前述天線的一端側連接至 前述高頻電源部； 接地側導電路，其係用以將前述天線的另一端側連接 至接地點； 電位分布調整用的電容器，其係設於前述電源側導電 φ 路及接地側導電路的至少一方，用以調整天線的電位分布 ;及 阻抗調整用的電容器，其係設於前述電源側導電路及 接地側導電路的至少一方，用以調整從前述高頻電源部經 由各天線構件到前述接地點爲止的高頻路徑的阻抗。 3. 如申請專利範圍第1或2項之電漿處理裝置，其 中，天線構件彼此間的間隔係構成調整自如。 4. 如申請專利範圍第3項之電漿處理裝置，其中， φ 前述天線構件的一端側及另一端側係被連接至在天線構件 的配列方向移動自如的移動部。 5. 如申請專利範圍第1或2項之電漿處理裝置，其 中，各長度相等的複數個直線狀的天線構件係形成相鄰且 彼此並聯而成的區段，該區段係被複數配置。 6. 如申請專利範圍第5項之電漿處理裝置，其中， 前述區段係被配置偶數個，前述電源側導電路及接地側導 電路係以在各區段之間前述高頻路徑的物理性長度會形成 相等的方式，結線相鄰的區段彼此間，而階梯狀地配線成 -41 - 201034521 決定淘汰賽的組合之線圖狀。 7. 如申請專利範圍第5項之電漿處理裝置，其中， 在任一的區段中，前述天線構件的配列間隔皆相等。 8. 如申請專利範圍第5項之電漿處理裝置，其中， 前述天線係具備： 複數的密部區域，其係複數的天線構件會彼此以第1 間隔來配列；及 疏部區域，其係設於該等密部區域彼此間之間，複數 @ 的天線構件會彼此以比前述第1間隔更大的第2間隔來配 列。 9. 如申請專利範圍第8項之電漿處理裝置，其中， 前述第1間隔係構成前述區段的天線構件的間隔，前述第 2間隔爲相鄰的區段彼此間的間隔。 10. 如申請專利範圍第5項之電漿處理裝置，其中， 前述區段彼此間的間隔係調整自如地構成。 11. 如申請專利範圍第10項之電漿處理裝置，其中 © ，前述區段的一端及另一端側係被連接至在前述區段的配 列方向移動自如的移動部。 12. 如申請專利範圍第1或2項之電漿處理裝置，其 中，爲了劃定前述處理環境，而具備設於前述載置台與天 線之間的電介體窗構件， 此電介體窗構件係具備： 複數個板狀的介質性構件，其係以能夠和前述載置台 對向的方式設置；及 -42- 201034521 複數的隔開部，其係爲了支持此介質性構件’而沿著 前述介質性構件的長度方向’以能夠和前述天線構件正交 的方式設置。 13.如申請專利範圍第12項之電漿處理裝置’其中 ，在前述隔開部的內部形成有處理氣體室’且在隔開部的 下面，爲了對前述處理容器供給處理氣體’而形成有與前 述處理氣體室連通的氣體供給孔。 〇 14.如申請專利範圍第13項之電漿處理裝置’其中 ，前述複數的隔開部係設成分別藉由吊起支持部來從前述 處理容器的頂部吊下來，在此吊起支持部的內部形成有與 前述隔開框部的處理氣體室連通之處理氣體的通流路。 15.如申請專利範圍第1或2項之電漿處理裝置，其 中，前述電位分布調整用的電容器係用以進行阻抗的調整 者，而使前述天線構件的長度方向中央部位的電位能夠形 成零。 ❿ -43-201034521 VII. Patent application scope: l- A plasma processing device is configured to cause an induced electric field to occur in a processing container to which a processing gas is supplied, to plasma the processing gas, and to be processed on a mounting table placed in the processing container. A plasma processing apparatus that performs plasma processing is characterized in that: an antenna ' is disposed outside the processing environment so as to be able to face the mounting table via a processing environment', and each length is equal and horizontal a plurality of linear antenna members arranged in parallel; a high frequency power supply unit for supplying high frequency power to the antenna; and a power supply side conduction circuit for connecting one end side of the antenna to the aforementioned frequency a power supply unit; a ground side conduction circuit for connecting the other end side of the antenna to a ground point; and a capacitor for adjusting potential distribution, which is provided on at least one of the power supply side conduction circuit and the ground side conduction circuit; The potential distribution for adjusting the antenna is set to be a resistance of each high-frequency path from the high-frequency power supply unit to the ground point via each antenna member. The resistance will form equal to each other. 2. A plasma processing apparatus for causing an induced electric field to occur in a processing container to which a processing gas is supplied, to plasma the processing gas, and to plasma-treat the object to be processed placed on the mounting table in the processing container. A plasma processing apparatus characterized by comprising: an antenna provided outside the processing environment so as to be able to face the mounting table via a processing environment, and each of the lengths being equal, parallel to each other - 40 - 201034521 a plurality of linear antenna members arranged in a line; a high frequency power supply unit for supplying high frequency power to the antenna; and a power supply side conduction circuit for connecting one end side of the antenna to the high frequency power supply unit a grounding side conduction circuit for connecting the other end side of the antenna to a ground point; and a capacitor for adjusting potential distribution, which is provided on at least one of the power supply side conductive φ path and the ground side conduction circuit Adjusting a potential distribution of the antenna; and a capacitor for impedance adjustment, which is provided on at least one of the power supply side conduction circuit and the ground side conduction circuit to adjust the slave The high-frequency power supply unit passes through the impedance of the high-frequency path from the antenna member to the ground point. 3. The plasma processing apparatus according to claim 1 or 2, wherein the spacing between the antenna members is adjusted. 4. The plasma processing apparatus according to claim 3, wherein the one end side and the other end side of the antenna member are connected to a moving portion that is movable in the arrangement direction of the antenna member. 5. The plasma processing apparatus according to claim 1 or 2, wherein the plurality of linear antenna members having the same length are formed into adjacent sections which are connected in parallel, and the sections are plurally arranged. . 6. The plasma processing apparatus of claim 5, wherein the segments are arranged in an even number, and the power source side circuit and the ground side circuit are physics of the high frequency path between the segments. The length of the length will be equal, and the adjacent sections of the knot will be lined up with each other, and the steps will be wired in a step-by-step manner to determine the combination of the knockouts. 7. The plasma processing apparatus of claim 5, wherein the arrangement of the antenna members is equal in any of the sections. 8. The plasma processing apparatus according to claim 5, wherein the antenna system includes: a plurality of dense portion regions in which a plurality of antenna members are arranged at a first interval; and a sparse portion region Between these dense portion regions, the plurality of antenna members are arranged at a second interval larger than the first interval. 9. The plasma processing apparatus of claim 8, wherein the first interval constitutes an interval of antenna members of the segment, and the second interval is an interval between adjacent segments. 10. The plasma processing apparatus according to claim 5, wherein the interval between the segments is adjusted to be freely adjustable. 11. The plasma processing apparatus according to claim 10, wherein the one end and the other end side of the section are connected to a moving portion that is freely movable in the arrangement direction of the section. 12. The plasma processing apparatus according to claim 1 or 2, further comprising a dielectric window member provided between the mounting table and the antenna for defining the processing environment, the dielectric window member The present invention includes: a plurality of plate-shaped dielectric members that are disposed to face the mounting table; and -42-201034521 a plurality of spaced portions that are supported to support the dielectric member The longitudinal direction ' of the dielectric member' is disposed so as to be orthogonal to the antenna member. 13. The plasma processing apparatus according to claim 12, wherein a processing gas chamber is formed inside the partition portion, and a processing gas is supplied to the processing container in the lower surface of the partition portion. a gas supply hole that communicates with the processing gas chamber. The plasma processing apparatus of claim 13, wherein the plurality of partitions are respectively suspended from the top of the processing container by lifting the support portion, and the support portion is lifted A through flow path of the processing gas that communicates with the processing gas chamber partitioning the frame portion is formed inside. The plasma processing apparatus according to claim 1 or 2, wherein the capacitor for adjusting the potential distribution is used to adjust the impedance, and the potential of the central portion of the antenna member in the longitudinal direction can be zero. . ❿ -43-
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