KR101351678B1 - Plasma processing apparatus and processing system - Google Patents

Abstract

Even if the object to be processed is large, the present invention provides a plasma processing apparatus of a multi-stage batch system that enables uniform plasma processing to be performed simultaneously on a plurality of the objects to be processed. A center portion of the surface on the opposite side to the loading surface on which the target objects of each of the two or more lower electrodes 10a to 10e are loaded, or the loading surface of each of the upper electrodes 11a to 11e forming an electrode pair with the lower electrodes 10a to 10e. Ground wires 13a to 13e connected to any one of the center portions of the surface on the opposite side to the opposing face opposite to the high-frequency supply lines 14a to 14e connected to the other side to which the ground lines 13a to 13e are not connected, Inside the processing chamber 31a, the shield members 12a to 12f for receiving the ground wires 13a to 13e and the high frequency supply lines 14a to 14e and the ground wires 13a to 13e are provided, respectively. Impedance adjustment mechanisms 15a to 15e which individually perform impedance adjustment with respect to the apparatus are provided.

Description

Plasma processing apparatus and processing system {PLASMA PROCESSING APPARATUS AND PROCESSING SYSTEM}

The present invention relates to a plasma processing apparatus and a processing system.

In the parallel plate type plasma processing apparatus, the sheet | leaf process which processes a board | substrate one by one is normally performed.

In order to raise the productivity of such a parallel plate type plasma processing apparatus, the multistage batch system which laminated | stacked the process chamber may be employ | adopted. The parallel plate type plasma processing apparatus of the multi-stage batch system is described in Patent Document 1, for example.

Registered Utility Model No. 3010443

In the multi-stage batch system, it is difficult to provide the feed section in the center of the electrode in order to stack the processing chambers. For this reason, as described in patent document 1, a power supply part is provided in the electrode side surface. However, in this power feeding method, when the substrate to be processed becomes large, and when a frequency of 13.56 MHz or more is applied, there is a situation that the potential difference on the electrode becomes large and uniform plasma processing becomes difficult.

This invention is made | formed in view of the said situation, Comprising: The multistage batch type plasma processing apparatus and this plasma processing apparatus which become able to perform uniform plasma processing simultaneously to a plurality of this to-be-processed object even if it is large. Provide one treatment system.

A plasma processing apparatus according to the first aspect of the present invention is a plasma processing apparatus that simultaneously processes two or more target objects using plasma, and is provided inside the processing chamber and the processing chamber to load the target objects. At least two lower electrodes having a stacking surface, provided in an interior of the processing chamber, and having an opposing surface opposed to the stacking surface, and having the same number of upper electrodes as the lower electrodes forming an electrode pair with the lower electrodes; A ground line connected to any one of a central portion of a surface opposite to the loading surface of each of the lower electrodes, or a central portion of a surface opposite to the opposing surface of each of the upper electrodes, and the loading surface of each of the lower electrodes. The ground wire is not connected in the center portion of the surface on the opposite side to the surface or in the center portion of the surface on the side opposite to the opposing surface of each of the upper electrodes. A high frequency supply line connected to the right side, a shield member which is provided inside the processing chamber, and accommodates the ground line and the high frequency supply line in the processing chamber, and is provided on each of the ground lines, for each of the electrode pairs. An impedance adjusting mechanism for individually adjusting impedance is provided.

The processing system which concerns on the 2nd aspect of this invention is a processing system which performs a process including at least 1 time plasma processing with respect to 2 or more to-be-processed object, each of 2 or more processing apparatuses provided with a processing chamber, and the said processing chamber A common conveying apparatus having a common conveying chamber connected to each of them and provided with a conveying mechanism for simultaneously conveying the two or more to-be-processed objects simultaneously, wherein the first conveying apparatus is provided in at least one of the two or more treating apparatuses. The plasma processing apparatus concerning the form is used.

Industrial Applicability According to the present invention, a plasma processing apparatus of a multi-stage batch system and a processing system having the plasma processing apparatus can be provided in which a uniform plasma processing can be simultaneously performed on a plurality of the processing targets even if the target object is large. have.

1 is a plan view schematically showing an example of a processing system according to an embodiment of the present invention.
FIG. 2 is a perspective view schematically showing the processing apparatus 3a shown in FIG. 1.
3 is a longitudinal sectional view taken along line 3-3 shown in FIG. 2;
4A is an enlarged cross sectional view showing an enlarged portion of an upper electrode;
4B is a horizontal sectional view taken along a line 4A-4A shown in FIG. 3.
4C is a horizontal sectional view taken along a line 4B-4B shown in FIG. 3.
5 is a diagram showing a potential difference distribution in a surface of a workpiece.

EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described with reference to an accompanying drawing. In this description, the same reference numerals are given to the same parts throughout all the drawings to which reference is made.

1 is a horizontal cross-sectional view showing an example of a processing system including a plasma processing apparatus according to an embodiment of the present invention. The processing system shown in FIG. 1 uses the glass substrate used for manufacture of a solar cell module and an FPD as a to-be-processed object G, and it carries out at least 1 time plasmas, such as an etching and film-forming, with respect to 2 or more sheets of this glass substrate. It is a processing system which performs a process including a process.

As shown in FIG. 1, the processing system 1 is comprised including the load lock apparatus 2, the processing apparatus 3a, 3b, and the common conveyance apparatus 4. As shown in FIG. In the load lock apparatus 2, pressure conversion is performed between an atmospheric side and a pressure reduction side. In the processing apparatus 3a, 3b, processing, such as heating, etching, film-forming, and ashing, is performed with respect to the to-be-processed object G, for example, a glass substrate.

The load lock apparatus 2, the processing apparatuses 3a and 3b, and the common conveying apparatus 4 are vacuum apparatuses, and the airtight-loaded load lock chamber 21 which can put the to-be-processed object G under predetermined pressure reduction state, respectively, is ), Processing chambers 31a and 31b and a common transfer chamber 41 are provided. Exhaust apparatuses, such as a vacuum pump, are connected to these chambers 21, 31a, 31b, and 41 through the exhaust port which is not shown in figure in order to make the inside into a pressure reduction state. In addition, the openings 23a, 23b, 33a, 33b, 43a, 43b and 43c are provided in these chambers 21, 31a, 31b and 41. The object to be processed G is carried in and out through these openings.

The load lock chamber 21 communicates with the outside of the processing system 1 through the gate valve chamber 6a in which the opening 23a and the gate valve for opening and closing the opening 23a are accommodated. In addition, the load lock chamber 21 communicates with the common conveyance chamber 41 via the opening part 23b, the gate valve chamber 6b in which the gate valve which opens and closes this opening part 23b is accommodated, and the opening part 43a.

The processing chamber 31a communicates with the common conveyance chamber 41 via the opening part 33a, the gate valve chamber 6c which accommodated the gate valve which opens and closes this opening part 33a, and the opening part 43b. Similarly, the process chamber 31b communicates with the common conveyance chamber 41 via the opening part 33b, the gate valve chamber 6d in which the gate valve which opens and closes this opening part 33b is accommodated, and the opening part 43c.

The planar shape of the common conveyance chamber 41 is a rectangular shape in this example. The opening portions 43a to 43c are formed on three sides of four sides of a rectangular shape. The conveyance mechanism 7 is provided in the common conveyance chamber 41. The conveyance mechanism 7 processes two or more to-be-processed objects G from the load lock chamber 21 to the processing chamber 31a or 31b and from the processing chamber 31a or 31b to the processing chambers 31b and 31a. It transfers to the load lock chamber 21 from chamber 31a, 31b. For this reason, the conveyance mechanism 7 is comprised so that 2 or more to-be-processed objects G can be hold | maintained simultaneously, and the lifting operation which raises and lowers two or more to-be-processed objects G simultaneously and two or more to-be-processed objects G simultaneously It is comprised so that a turning operation | movement which makes turning, and the advancing evacuation operation to the inside of the load lock chamber 21 and the processing chambers 31a and 31b are possible.

Such control of each part of the processing system 1 and control of the conveyance mechanism 7 are performed by the control part 100. The control part 100 has the process controller 101 which consists of a microprocessor (computer), for example. The process controller 101 includes a user interface 102 including a keyboard for inputting a command or the like for the operator to manage the processing system 1, a display for visualizing and displaying the operation status of the processing system 1, and the like. ) Is connected.

The storage unit 103 is connected to the process controller 101. The storage unit 103 performs processing to each part of the processing system 1 according to a control program or processing conditions for realizing various processes executed in the processing system 1 by the control of the process controller 101. The recipe for execution is saved. The recipe is stored in the storage medium of the storage unit 103, for example. The storage medium may be a hard disk, a semiconductor memory, or a portable medium such as a CD-ROM, a DVD, or a flash memory. In addition, the recipe may be appropriately transmitted from another apparatus via, for example, a dedicated line. A recipe is read from the memory | storage part 103 by the instruction etc. from the user interface 102 as needed, and the process controller 101 performs the process according to the read recipe so that the processing system 1 and conveyance apparatus may be carried out. (7) Under the control of the process controller 101, desired processing and control are performed.

FIG. 2 is a perspective view schematically showing the processing apparatus 3a shown in FIG. 1, and FIG. 3 is a longitudinal cross-sectional view along the line 3-3 shown in FIG. 2.

As shown in FIG. 2 and FIG. 3, in this example, the processing apparatus 3a is a plasma processing apparatus. In the processing apparatus 3a, processing, such as etching using a plasma, film-forming, or ashing, is performed to the to-be-processed object G. The processing apparatus 3a of this example is a parallel plate type plasma processing apparatus of a multi-stage batch system, and can process two or more workpieces G simultaneously. In this example, five workpieces G can be processed simultaneously. For this reason, as shown by 33a1-33a5, five opening 33a which makes the to-be-processed object G pass in and out is provided in the process chamber 31a. These openings 33a1 to 33a5 are opened and closed using gate valves GV1 to GV5, respectively.

In the processing chamber 31a, five lower electrodes 10a to 10e and five upper electrodes 11a to 11e forming an electrode pair with each of the lower electrodes 10a to 10e are provided in this example. . The lower electrodes 10a to 10e have a stacking surface on which the object G is to be loaded, and the upper electrodes 11a to 11e have opposing surfaces opposite to the stacking surface. 4A is an enlarged cross-sectional view showing an enlarged part of the upper electrode. In particular, although part of the upper electrode 11a is enlarged and shown in FIG. 4A, the other upper electrode 11b-11e is the same structure.

As shown in FIG. 4A, the upper electrode 11a is a shower head, for example. The shower head includes a gas diffusion space 82 therein, and a plurality of discharge holes 83 are formed on the opposite surface to discharge the gas in the gas diffusion space 82 toward the object G. The gas introduction port 84 is provided in the upper electrode 11a, for example, on the surface opposite to the opposite surface. The gas supply pipe 81a is connected to the gas introduction port 84. The gas supply pipe 81a is connected to a gas box 8 which is a gas supply source, and the gas 85 such as process gas and purge gas from the gas box 8 passes through the gas supply pipe 81a through a gas diffusion space 82. Is supplied. In this example, as shown in FIG. 2, it has five gas supply pipes 81a-81e, and process gas from the gas box 8 in the gas diffusion space 82 inside upper electrodes 11a-11e, respectively. And gas 85 such as purge gas. The supply / stop of the gas 85 and the adjustment of the supply amount are performed by the valves V1 to V5 respectively provided in the paths of the gas supply pipes 81a to 81e, for example. Moreover, the exhaust mechanism 9 which exhausts the inside of the process chamber 31a is connected to the process chamber 31a, and the lower electrode 10a-10e and the upper electrode 11a-11e in each of the said electrode pairs are connected. The space between them is common and is exhausted by the said exhaust mechanism.

Moreover, the shield members 12a-12f comprised using the rod-shaped hollow member which traverses the inside of the process chamber 31a, for example is provided in the process chamber 31a. Among these shield members 12a-12f, the 2nd layer shield member 12b thru | or 5th layer shield member 12e except the uppermost layer and the lowermost layer is arrange | positioned in each of the electrode pairs adjacent to each other. In addition, the uppermost first layer shield member 12a is disposed between the ceiling wall of the processing chamber 31a and the uppermost upper electrode 11a, and the lowermost sixth layer shield member 12f is the lowermost lower electrode ( 10e) and the bottom wall of the processing chamber 31a. Inside each of the shield members 12a to 12f, ground wires 13a to 13e and high frequency supply lines 14a to 14e are similarly accommodated between the respective electrode pairs. In addition, the shield member does not necessarily need to have a rod shape, and may be a plate-shaped member having a wide width in the thickness direction in order to increase stability for supporting the lower electrode described later. Furthermore, in order to increase the intensity | strength of this plate-shaped member, you may provide reinforcement members, such as a liner.

The ground wires 13a to 13e are connected to one of the lower electrodes 10a to 10e and the upper electrodes 11a to 11e, and one electrode group is connected to the ground potential GND through the impedance adjustment mechanisms 15a to 15e. To ground. Moreover, the high frequency supply lines 14a-14e are connected to the other electrode group which is not connected to the said ground line, and the high frequency power supply RF connected to the said other electrode group via the said high frequency supply line is the said other. The high frequency power is supplied to the electrode group on the side. In this example, the ground wires 13a to 13e are accommodated in the second layer shield members 12b to 6th layer shield member 12f to form a lower electrode group composed of the lower electrodes 10a to 10e. To ground potential GND through the first through 15e, and the high frequency supply lines 14a through 14e are accommodated together with the ground lines 13a through 13e in the first layer shield member 12a through the fifth layer shield member 12e. The case where the high frequency power is supplied to the upper electrode group by connecting the upper electrode group consisting of the upper electrodes 11a to 11e to the high frequency power source RF will be described. The ground wires 13a to 13e are also accommodated in the first layer shield members 12a to the fifth layer shield member 12e, and the high frequency supply lines 14a to 14e are the second layer shield members 12b to 6th. The same is true except that the layer shield member 12f is accommodated.

In this example, the ground wire 13x housed in the first-layer shield member 12a of the uppermost layer is a ground wire that grounds the processing chamber 31a, but it is not necessary to provide the ground wire of the processing chamber through the shield member. The ground wire may be provided by another separate path.

The frequency of the high frequency power supply RF is 13.56 MHz or more. As an example of a specific frequency, it is 27.12 MHz, for example. In addition, in order to obtain high productivity, generation of a high density plasma is preferable, and in a parallel plate type plasma processing apparatus, a high density plasma can be generated by applying a higher frequency. Examples of the frequencies include VHF bands and UHF bands exceeding 100 MHz in addition to frequencies exceeding 27.12 MHz, for example, 40.68 MHz, 60 MHz, and 100 MHz. The upper limit of the frequency is not limited, but from a practical point of view, it will be 950 MHz.

The shield members 12a-12f of this example are arrange | positioned so that the upper part of the upper electrode 11a-11e and the lower part of the lower electrode 10a-10e may pass inside the process chamber 31a.

4B is a horizontal sectional view taken along the line 4A-4A shown in FIG. 3, and FIG. 4C is a horizontal cross sectional view taken along the line 4B-4B shown in FIG. In FIG. 4B, an upper surface of the second upper electrode 11b is shown, and in FIG. 4C, a rear surface of the first lower electrode 10a is illustrated.

As shown in FIGS. 4B and 4C, the shield member 12b is disposed below the center of the lower electrode 10a and between the lower electrode 10a and the upper electrode 11b in the processing chamber 31. It passes above the center part of the upper electrode 11b. An opening 16L is provided in a portion of the shield member 12b that is above the center portion of the upper electrode 11b, and an opening 16U is provided in a portion of the shield member 12b that corresponds below the center portion of the lower electrode 10a. The ground line 13a is connected to the central portion of the lower electrode 10a through the opening 16U, and the high frequency supply line 14b is connected to the central portion of the upper electrode 11b through the opening 16L.

In addition, the bending position above the ground line 13a and the bending position below the high frequency supply line 14b are shift | deviated from each other in the part of opening part 16L, 16U, for example. By shifting the bending position, the ground line 13a and the high frequency supply line 14b can be arranged so as not to interfere with each other in the shield member 12b (see in particular, FIG. 3).

In the present example, the upper electrode 11b is provided through the first hollow insulating member 17U through which the high frequency supply line 14b passes between the central portion of the upper electrode 11b and the opening 16L. It is fixed to the shield member 12b.

In addition, the lower electrode 10a has the same inside as the hollow second insulating member 17L provided between the central portion of the lower electrode 10a and the opening 16U through which the ground wire 13a passes. It is provided so that it can expand and contract to the shield member 12b through the hollow elastic member 18 through which the ground wire 13a passes, for example, a bellows. The reason why the lower electrode 10a is elastically provided on the shield member 12b existing below is to secure the exit space of the transfer mechanism 7 at the time of entering and exiting the object G, and the plasma treatment. This is for gap adjustment between the lower electrode 10a and the upper electrode 11a in the city. That is, the lower electrode 10a is provided to the shield member 12b so that it can be elevated. For this reason, it is covered with the 3rd insulating member 19 on the surface which faces the back surface of the lower electrode 10a of the shield member 12b, and on this 3rd insulating member 19 the lower electrode 10a which is not shown in figure. An elevating device for elevating is configured to be installable. Although the example which forms the insulating member 19 only on the surface which opposes the back surface of the lower electrode 10a of the shield member 12b is shown, even if it is formed so that the whole periphery of the shield member 12b may be covered. do.

Further, since the lower electrode 10a is raised and lowered, in this example in which the ground line 13a is connected to the lower electrode 10a, in order to prevent the ground line 13a from being broken by the rising of the lower electrode 10a. The connection point of the ground wire 13a and the center portion of the lower electrode 10a is connected to the bendable conductive member 20, for example, a coaxial cable. By connecting the connection point of the ground line 13a and the center portion of the lower electrode 10a with the bendable conductive member 20, the problem that the ground line 13a is broken when the lower electrode 10a is raised is eliminated. Can be. In addition, when connecting the high frequency supply line 14b to the lower electrode 10a instead of the ground line 13a, the conductive member 20 which can bend the connection point of the high frequency supply line 14b and the center part of the lower electrode 10a is provided. Use to connect.

In the present example, the case where the high frequency supply line 14b is connected to the ground electrode 13a and the upper electrode 11b to the lower electrode 10a has been described. However, the high frequency supply line 14b is connected to the lower electrode 10a. In this case, of course, the high frequency supply line 14b is connected to the bendable conductive member 20 and passes through the inside of the insulating member 17L and the hollow elastic member 18.

In addition, the inside of the shield member 12b is hermetically shielded from the inside of the processing chamber 31a. For this reason, the inside of the shield member 12b can be made into the atmosphere different from the atmosphere of the process chamber 31a, for example, atmospheric condition.

In addition, the shield members 12b and ground lines 13a shown in FIGS. 4B and 4C also include the configurations of the shield members 12a, 12c to 12f, the ground wires 13b to 13e, and the high frequency supply lines 14a and 14c to 14e. ) And the same configuration as that of the high frequency supply line 14b.

Thus, according to the plasma processing apparatus 3a which concerns on one Embodiment of this invention, and the processing system 1 provided with this plasma processing apparatus 3a, a rod is provided between the electrode pairs of the processing chamber 31, for example. The shield members 12a to 12f constituted by the hollow member of the shape are passed through (the uppermost layer passes above the upper electrode, and the lowermost layer passes below the lower electrode). By providing this structure, the ground wires 13a-13e and the high frequency supply lines 14a-14e can be accommodated in the shield members 12a-12f. For this reason, the ground wires 13a to 13e and the high frequency supply lines 14a to 14e can be accommodated and drawn up above the center of the upper electrodes 11a to 11e and below the center of the lower electrodes 10a to 10e. In particular, with respect to the shield members 12b to 12e existing between the electrode pairs, the high frequency supply line and the ground line connected to the respective electrodes above and below the respective shield members can be drawn in from the outside of the processing chamber by a common integrated shield member. Therefore, the distance between the electrode pairs can be shortened, thereby preventing the processing chamber from becoming large. The drawn ground wires 13a to 13e are connected to the center of the lower electrodes 10a to 10e, and the same high frequency supply lines 14a to 14e which are led in are connected to the center of the upper electrodes 11a to 11e. Alternatively, the incoming ground wires 13a to 13e are connected to the center of the upper electrodes 11a to 11e and the same high frequency supply lines 14a to 14e are connected to the center of the lower electrodes 10a to 10e. The center part here is an area | region containing the center point of an electrode.

In this way, by connecting the ground lines 13a to 13e or the high frequency supply lines 14a to 14e to the region including the center point of the electrode, and setting the ground point and the feed point to the electrode center, respectively, the feed point and the ground point are connected to the electrode end. The potential difference generated in the electrode surface can be reduced as compared with the case where there is. 5 shows an example of a potential difference occurring in the electrode surface when the feed point is at the center of the electrode and when the feed point is at the electrode end. As shown in FIG. 5, the potential difference A when the feed point is at the center of the electrode is smaller than the potential difference B when the feed point is at the electrode end.

For this reason, according to the plasma processing apparatus which concerns on one Embodiment, the plasma processing apparatus of the multi-stage batch system by which uniform plasma processing is attained can be obtained.

Moreover, in the said one Embodiment, the impedance adjustment mechanism 15a-15e is provided in each of the ground wires 13a-13e. These impedance adjustment mechanisms 15a to 15e individually perform impedance adjustment for each of the electrode pairs (lower electrode 10a and upper electrode 11a to lower electrode 10e and upper electrode 11e). For this reason, the potential difference generated in the electrode surface can be reduced, and the impedance is adjusted individually in each of the electrode pairs, so that, for example, subtle impedance of the impedance due to individual differences between the electrodes or differences in the progress of contamination can be obtained. We can adjust car, too. For this reason, the advantage that the said uniform plasma process is attained can be utilized better.

And according to the plasma processing apparatus which concerns on the said one Embodiment, the said advantage is a shield member comprised, for example between rod-shaped hollow members between electrode pairs of the processing chamber 31 in the processing chamber 31. It can be realized with a simple configuration of passing through 12a to 12f.

The shield members 12a to 12f may also be provided with a lifting device that lifts the lower electrodes 10a to 10e, for example. For this reason, providing the shield members 12a to 12f between the electrode pairs of the processing chamber 31 in the processing chamber 31 also provides the advantage that the limited space of the processing chamber 31 can be effectively utilized. have.

As mentioned above, although this invention was demonstrated according to one Embodiment, this invention is not limited to the said one Embodiment, It can variously change. In addition, said embodiment is not the only embodiment of embodiment of this invention.

For example, in the said one embodiment, although the number of the to-be-processed object processed at once was five sheets, it is not limited to five sheets, but may be two or more sheets.

In addition, in the said one Embodiment, although the example which applied the plasma processing apparatus which concerns on the said one Embodiment to the processing apparatus 3a was shown, the plasma which concerns on the said one Embodiment is applied to both of the processing apparatuses 3a and 3b. You may apply a processing apparatus. In addition, the number of processing apparatuses in a processing system is not limited to two, either.

In addition, the present invention can be variously modified without departing from the gist of the present invention.

31a: processing chamber
10a to 10e: lower electrode
11a to 11e: upper electrode
12a to 12f: shield member
13a to 13e: ground wire
14a to 14e: high frequency supply line
15a to 15e: Impedance Adjustment Mechanism
16U, 16L: opening
17U: first insulating member
17L: second insulation member
18: elastic member
19: third insulation member
20: stretchable conductive member

Claims (8)

It is a plasma processing apparatus which processes two or more to-be-processed objects simultaneously using a plasma,
A processing chamber,
At least two lower electrodes provided inside the processing chamber and having a loading surface for loading the object;
An equal number of upper electrodes installed in the processing chamber and having an opposing surface facing the loading surface and forming an electrode pair with the opposing lower electrodes;
A ground wire connected to one of a central portion of a surface opposite to the loading surface of each of the lower electrodes, or a central portion of a surface opposite to the opposite surface of each of the upper electrodes;
A high frequency supply line connected to a center portion of the surface on the side opposite to the mounting surface of each of the lower electrodes, or a center portion of the surface on the side opposite to the opposing surface of each of the upper electrodes, connected to the other side to which the ground wire is not connected;
A shield member provided inside the processing chamber and accommodating the ground line and the high frequency supply line in the processing chamber;
An impedance adjusting mechanism provided on each of the ground wires and performing impedance adjustment for each of the electrode pairs separately;
Two or more electrode pairs are disposed along the up and down direction inside the processing chamber,
The shield member is disposed between each of the electrode pairs formed between the electrode pairs adjacent to each other, and the ground member and the high frequency supply line provided between the electrode pairs are integral to each other between the electrode pairs. It is accommodated in, The plasma processing apparatus. delete The method of claim 1,
The shield member is a plasma processing apparatus, characterized in that the rod-shaped hollow member that crosses the interior of the processing chamber. The method of claim 3,
The shield member passes above the central portion of the upper electrode and below the central portion of the lower electrode in the processing chamber.
Openings are provided in each of the portions corresponding to the upper portion of the upper portion of the upper electrode and the lower portion of the lower portion of the lower electrode of the shield member,
Each of the ground line and the high frequency supply line is connected to a central portion of the upper electrode or a central portion of the lower electrode through each of the openings. 5. The method of claim 4,
The upper electrode is formed between the central portion of the upper electrode and the opening corresponding to the upper portion of the upper portion of the upper electrode through the first insulating member having a hollow shape through which the ground line or the high frequency supply line passes. It is fixed to the shield member, The plasma processing apparatus characterized by the above-mentioned. The method according to claim 4 or 5,
The lower electrode includes a second insulating member having a hollow shape through which the ground line or the high frequency supply line passes, the interior of which is provided between the central portion of the lower electrode and the opening corresponding to the lower portion of the lower electrode. And is provided in the shield member so as to be able to stretch and contract through a hollow stretchable member through which the ground line or the high frequency supply line passes. 6. The method according to any one of claims 1 to 5,
And the shield member is hermetically shielded to isolate the inside of the shield member from the inside atmosphere of the processing chamber, and the inside of the shield member is an atmospheric atmosphere. It is a processing system which performs a process including at least 1 time plasma processing with respect to 2 or more to-be-processed object,
Two or more processing apparatus each having a processing chamber,
It is provided with the common conveyance apparatus provided with the common conveyance chamber connected to each said process chamber, and the conveyance mechanism which conveys the said 2 or more to-be-processed object simultaneously inside,
The plasma processing apparatus according to any one of claims 1 and 3 to 5 is used for at least one of the two or more processing apparatuses.

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