JP4158726B2 - Thin film manufacturing equipment - Google Patents

Description

  The present invention relates to a thin film manufacturing apparatus, and more particularly to a thin film manufacturing apparatus that forms each layer on a flexible substrate to be transported.

  When manufacturing a thin film photoelectric conversion element, for example, a photoelectric conversion layer mainly made of amorphous silicon (a-Si) is formed on a long flexible substrate made of a polymer material or a metal such as stainless steel. Doing is excellent in terms of productivity.

As described above, as a device for forming a plurality of layers on a flexible substrate and manufacturing a thin film photoelectric conversion element, conventionally, a thin film manufacturing device for forming each layer on a flexible substrate to be transported is used. is there.
Such a thin film manufacturing apparatus mainly includes a roll-to-roll system and a stepping roll system. The roll-to-roll method is a method in which a film is continuously formed on a flexible substrate that moves continuously in the film formation chamber, and the stepping roll method is a method in which a flexible substrate is temporarily placed in the film formation chamber. After the film formation is stopped, the flexible substrate portion after film formation is sent from the film formation chamber to the next film formation chamber. The stepping roll type film formation is superior to the roll-to-roll type film formation in that there is no gas interdiffusion between adjacent film forming chambers and the apparatus is compact.

  As a conventional general thin film manufacturing apparatus, an apparatus that transports a flexible substrate horizontally is used. However, in such an apparatus, there is a problem that it is necessary to secure a wide installation space. Therefore, as a technique for improving such a problem, there is a conventional technique for conveying a flexible substrate vertically. is there. Further, as a technique for improving the film formation efficiency in one apparatus, there is a technique in which a plurality of flexible substrates are transported in parallel and a film is formed on each substrate surface.

FIG. 4 is a cross-sectional plan view of a conventional thin film manufacturing apparatus that transports two flexible substrates that are transported with the substrate surface vertical, and forms a thin film on one surface of both.
In the thin film manufacturing apparatus 100 shown in FIG. 4, first, the flexible substrate 101 is pulled out from the two carry-in rolls 102 accommodated in the feeding chamber 111, and they enter the film forming vacuum chamber 113 through the preliminary vacuum chamber 112. . In this film-forming vacuum chamber 113, two ground electrodes 122 are arranged opposite to each other on the outside of one voltage application electrode 121, and each flexible substrate 101 transported between both electrodes is placed in the film-forming chamber. At 105, the film is temporarily stopped and film formation is performed. After the film formation is completed, the actuator 124 is activated, and each flexible substrate 101 is wound around the two transport rolls 103 accommodated in the winding chamber 114.

FIGS. 5A and 5B are diagrams showing details of film formation in the thin film manufacturing apparatus shown in FIG. 4. FIG. 5A shows a film formation time, and FIG. 5B shows a substrate transfer time.
The film forming vacuum chamber 113 is separated from the outside by a wall 115, and when forming the film shown in FIG. 5A, a ground electrode 122 is provided outside each flexible substrate 101 sandwiched between the transport rollers 104. The film forming chamber 105 in an airtight state is formed by the close contact and the sealing material 152 of the film forming chamber wall 151 in close contact therewith. Then, a voltage is applied between the voltage applying electrode 121 and the ground electrode 122 to generate plasma 106, and a reaction is performed on the surface of each flexible substrate 101 heated by the heater 123 built in the ground electrode 122. A thin film is formed by gas decomposition. When the flexible substrates 101 are transported after film formation, the transport rollers 104 and the ground electrodes 122 are moved by about 1 cm in the direction indicated by the arrow A by the actuator 124 shown in FIG. FIG. 5B shows a state after this movement is performed. In this way, each flexible substrate 101 can be transported in the direction indicated by arrow B without contacting the film forming chamber wall 151 and the ground electrode 122.

  Further, in order to form a semiconductor thin film having, for example, a pin structure using a conventional thin film manufacturing apparatus, it is necessary to pass the flexible substrate through a plurality of film formation chambers into which different reaction gases are introduced. However, in the case of such a configuration, it is generally necessary to provide a gate between the film forming chambers, and there is a problem that the apparatus configuration becomes complicated. As a technique for improving such a problem, there is conventionally a technique for sequentially forming a film in a plurality of film forming chambers arranged adjacent to each other.

FIG. 6 is a plan sectional view of a conventional thin film manufacturing apparatus having a plurality of film forming chambers arranged adjacent to each other.
In the thin film manufacturing apparatus 200 shown in FIG. 6, film formation is sequentially performed on the same flexible substrate 201 by a plurality of film formation chambers 205 disposed adjacent to each other in the longitudinal direction. The ground electrode 222 is prepared in common for each film forming chamber 205, and the film forming chambers 205 are adjacent to each other with a grounded conductive side wall 253 interposed therebetween. Each voltage application electrode 221 and the conductive side wall 253 are insulated by an insulator 259. The film formation vacuum chambers 213 surrounding each film formation chamber are communicated by a vacuum exhaust pipe 271, and the internal pressure is made uniform by providing the communication holes 254 in the conductive side wall 253. Further, each film forming chamber 205 is also evacuated by opening a vacuum exhaust port 272. The flexible substrate 201 is transported by floating the ground electrode 222 from the flexible substrate 201. With such a configuration, a plurality of film forming chambers can be arranged without complicating the apparatus configuration.

However, the above-described thin film manufacturing apparatus 200 has a problem that noise generated by the voltage applied to the other film forming chamber 205 adversely affects the film quality.
In order to improve such a problem, the technique which covers the back surface and side surface of a voltage application electrode with a shield body conventionally is disclosed (for example, refer patent document 1).

  FIG. 7 is a plan sectional view showing a film forming chamber portion of a conventional thin film manufacturing apparatus in which the back surface and side surfaces of the voltage application electrode are covered with a shield body. FIG. 8 is a longitudinal sectional view showing a general power feeding method of the thin film manufacturing apparatus shown in FIG.

  In the thin film manufacturing apparatus 300 shown in FIG. 7, two voltage application electrodes 302 coupled via an exhaust member 307 are arranged between two rows of flexible substrates 301 transported in parallel. Ground electrodes 303 are arranged on opposite sides of the flexible substrate 301, respectively. The back and side surfaces of each voltage application electrode 302 are covered with a shield body 304, and a conductive frame 305 is conductively coupled thereto. With such a structure, when the film formation chamber 308 is shielded and has a plurality of film formation chambers 308, the influence of noise generated by the voltage applied to the other film formation chamber 308 is prevented. In addition, as a power feeding method to the voltage application electrode 302, as shown in FIG. 8, one end of a power feeding body 306 made of a conductor covered with an insulator is connected to an impedance matching unit 351 installed on the upper part of the thin film manufacturing apparatus 300. The other end is connected to the upper end portion of the voltage application electrode 302 through the shield body 304. With such connection, power is supplied from the high-frequency power source 352 to the voltage application electrode 302, and plasma necessary for forming a thin film is generated in the film formation chamber 308.

  In recent years, as a frequency of a high-frequency power source, a frequency that is about 2 to 4 times higher than 13.56 MHz, which has been mainly used in the past, has begun to be used. The following two points are mainly cited as factors that cause the transition to such a high frequency range. That is, firstly, it has been found that it is possible to improve the film quality in addition to the improvement of the formation speed of the thin film. Second, when plasma is generated at a high frequency, voltage is applied. Electrons are trapped between the electrode and the ground electrode, and the plasma can be maintained at a low applied voltage, thereby reducing damage caused by energetic particles incident on the flexible substrate during film formation.

  However, in the conventional power supply method as shown in FIG. 8, as the frequency of the applied voltage supplied from the high frequency power supply becomes higher, the wavelength becomes the same as that of the voltage applied electrode. Will be different. In particular, a phenomenon occurs in which the potential on the opposite side becomes larger than that on the power feeding side, and the potential difference becomes more significant as the frequency becomes higher. Accordingly, since the plasma density also varies in response to such a potential difference, the resulting thin film has a problem that it has a very non-uniform film thickness distribution where the power supply side is thin and the opposite side is thick.

In order to improve such a problem, there is a conventional method of supplying power to the central portion of the voltage application electrode.
FIG. 9 is a cross-sectional view of a conventional thin film manufacturing apparatus using a method of supplying power to the central portion of the voltage application electrode. In addition, the same code | symbol is attached | subjected to the same thing as FIG. 8, and description is abbreviate | omitted.

In the thin film manufacturing apparatus 300 a shown in FIG. 9, one end of the conductor 306 a constituting the power supply body 306 is connected to the impedance matching device 351, and the other end passes through the shield body 304 and is arranged directly below. Connected to the part. Thus, power is supplied from the high-frequency power source 352 to the central portion of the voltage application electrode 302, and the problem of the power supply method shown in FIG. 8 is improved.
JP-A-8-293491 (paragraph number [0010], FIG. 6)

  However, in the above thin film manufacturing apparatus, since the conductor constituting the power feeding body has a structure arranged in the space formed by the voltage application electrode and the shield body, between the conductor and the voltage application electrode, A stray capacitance 309 as shown in FIG. 9 is generated. In addition, the structure as described above is a structure in which electromagnetic waves from the conductor easily propagate. Due to these factors, as the frequency of the applied voltage supplied from the high-frequency power source increases, a high-frequency current flows more easily over the voltage-applying electrode, causing a potential difference in the voltage-applying electrode. Corresponding to this, the density of the plasma generated in the film forming chamber becomes non-uniform, and the resulting thin film has a problem that the film thickness on the upper side of the electrode becomes thin. In order to reduce the above stray capacitance and suppress the influence of electromagnetic wave propagation, it is necessary to increase the distance between the conductor and the voltage application electrode. However, taking such a measure has a problem in that the reaction chamber volume is increased and the apparatus is increased in size, which increases not only the apparatus cost but also the construction cost of the building in which the apparatus is installed.

  This invention is made | formed in view of such a point, and it aims at providing the thin film manufacturing apparatus which can implement | achieve favorable film thickness distribution, suppressing cost.

  In the present invention, in order to solve the above problem, in a thin film manufacturing apparatus for forming a thin film on one surface of a flexible substrate to be transported, a voltage application electrode disposed facing the flexible substrate, Is formed of a conductor covered with an insulator, and is arranged with a power supply for supplying power to the voltage application electrode and a ground potential on the back side of the voltage application electrode, and the power supply is arranged at the center of the voltage application electrode. And a shield body provided with a through hole for leading to the portion, and the thin film manufacturing apparatus is characterized in that the power feeding body is inserted into the through hole to feed power to the central portion.

According to said structure, it becomes possible to guide the electric power feeding body to the center part of a voltage application electrode in the shield state, and to supply electric power to the said center part.
Further, in the present invention, in order to solve the above-mentioned problem, in a thin film manufacturing apparatus for forming a thin film on one surface of each of two rows of flexible substrates transported in parallel, the opposing surfaces are arranged between the flexible substrates. The voltage application electrode that is disposed, and a conductor that is entirely covered with an insulator, is disposed with a ground potential between the power supply body that supplies power to the voltage application electrode and the voltage application electrode, A shield body provided with a through hole for guiding the power feeding body to the central portion of the voltage application electrode, and feeding the power feeding body to the central portion by inserting the power feeding body into each of the through holes. Is provided.

  According to said structure, each electric power feeding body can be guide | induced to the center part of a voltage application electrode in the shield state, and it becomes possible to supply electric power to the said center part, respectively.

  The thin film manufacturing apparatus according to the present invention feeds power to a central portion by inserting a power feeder into a through-hole for leading to the central portion of the voltage application electrode provided in the shield body, so that the central portion of the voltage application electrode is reached. It becomes possible to feed power to the central portion by the shielded power feeding body. Accordingly, it is possible to suppress a potential difference generated in the voltage application electrode, and to improve the film thickness distribution of the thin film. In addition, since it is not necessary to increase the size of the apparatus, the cost can be suppressed.

  Another thin film manufacturing apparatus according to the present invention supplies voltage to the central portion by inserting a power supply body through a through hole for leading to the central portion of each voltage applying electrode provided in the shield body. It is possible to feed power to the central portion by the respective power feeding bodies shielded up to the central portion. Therefore, it is possible to suppress the potential difference generated in each voltage application electrode, and the film thickness distribution of the thin film can be improved. In addition, since it is not necessary to increase the size of the apparatus, the cost can be suppressed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a plan sectional view showing a film forming chamber portion of a thin film manufacturing apparatus according to an embodiment of the present invention. 2 is a cross-sectional view taken along line AA in FIG. 1, and FIG. 3 is a cross-sectional view taken along line BB in FIG.

  A thin film manufacturing apparatus 10 according to an embodiment of the present invention performs film formation by a stepping roll method. Two rows of flexible substrates 1 drawn out from a feeding chamber are transported in parallel, and a preliminary vacuum chamber is formed. After that, the film forming vacuum chamber is entered, temporarily stopped in the film forming chamber 8 shown in FIG. 1, and formed on each surface, and then accommodated in the take-up chamber. In addition, illustration of each said chamber | room except the film-forming chamber 8 is abbreviate | omitted.

  The thin film manufacturing apparatus 10 according to the present embodiment configured as described above includes the voltage application electrode 2 and the ground electrode 3 that are arranged to face each other between two rows of flexible substrates 1 that are transported in parallel, and each voltage. The shield body 4 is disposed between the application electrodes 2, the frame body 5 is insulated and screwed to the voltage application electrodes 2, and the power supply body 6 is inserted into the shield body 4. Further, the voltage application electrodes 2 are connected in an airtight manner by the exhaust member 7.

  The voltage application electrode 2 is disposed opposite to the flexible substrate 1. In the present embodiment, the central portion 2a of the voltage application electrode 2 is processed to have a convex shape, and one end of a power supply body 6 disposed through the shield body 4 is connected to the central portion 2a. The ground electrode 3 is disposed so as to face the voltage application electrode 2 on the side facing the flexible substrate 1. The ground electrode 3 incorporates a heater 3 a for heating the flexible substrate 1. By the voltage application electrode 2 and the ground electrode 3, a voltage is applied to the film forming chamber 8 that is in an airtight state during film formation, and plasma for forming a thin film is generated in the film forming chamber 8.

  The shield body 4 is made of, for example, a conductive member such as aluminum, and is disposed between the voltage application electrodes 2 disposed to face each other. In the present embodiment, this member is disposed so as to cover the back surface and the side surface of each voltage application electrode 2. Further, the wall body 9 arranged so as to separate the vacuum chamber for film formation from the outside world is at the ground potential, and the shield body 4 is connected to the wall body 9 and kept at the ground potential.

  The frame body 5 is made of, for example, a conductive member such as stainless steel, and is disposed outside each voltage application electrode 2 with a spacing member 15 having both insulating properties and sealing properties interposed therebetween. In addition, a groove is dug in the contact surface of the frame 5 and the voltage applying electrode 2 with the spacing member 15, and a sealing material 16 for keeping airtightness is held. Each frame 5 arranged in this manner is screwed to the voltage application electrode 2 by a screw 18 covered with an insulating tube 17 for maintaining electrical insulation. The shield body 4 is screwed with screws 19. As a result, the frame body 5 is conductively coupled to the shield body 4 and maintained at the ground potential in the same manner as the shield body 4.

  The power feeder 6 is a member for feeding power to the voltage application electrode 2 and is composed of a conductor 6a whose entire circumference is covered with an insulator 6b. In the present embodiment, the conductor 6a having a rod shape is used.

  The exhaust member 7 has a hollow portion for exhaust, and is used to exhaust the reaction gas supplied to the film formation chamber 8 during film formation. As shown in FIG. 1, each voltage application electrode 2 used in the present embodiment has an exhaust port 2 </ b> A for exhausting air from the film formation chamber 8 at a position symmetrical to the center portion 2 a in the horizontal direction of the drawing. Each is provided. The exhaust ports 2 </ b> A facing each other of the voltage application electrodes 2 are coupled to both side ends of the hollow portion of the exhaust member 7. Thus, the opposing exhaust ports 2A are connected to the exhaust member 7. In addition, the sealing material 16 mentioned above is hold | maintained on the surface which contacts the voltage application electrode 2 of the exhaust member 7. FIG. In this way, by connecting the exhaust ports 2A provided at positions opposite to each other of the voltage application electrodes 2 by the exhaust member 7, it is not necessary to separately exhaust from each film forming chamber 8, so that the exhaust structure is improved. This simplifies and makes it possible to reduce the cost.

  As shown in FIG. 3, the exhaust member 7 has an opening 7a on the lower surface side. And the hole 4a and 9a are each provided in the position corresponding to the said opening 7a in the shield body 4 and the wall body 9, and these function as an exhaust_gas | exhaustion path | route in exhaust_gas | exhaustion. In addition, the sealing material 16 mentioned above is hold | maintained at the surface which contacts the exhaust member 7 and the wall body 9 of the shield body 4, respectively.

  In the thin film manufacturing apparatus 10 configured as described above, as shown in FIG. 2, the impedance matching device 51 is installed on the upper portion of the wall body 9 at a location corresponding to the position directly above the central portion 2 a of the voltage application electrode 2. On the other hand, a high frequency power supply 52 is connected. The impedance matching unit 51 performs control to minimize the reflected wave from the voltage application electrode 2.

  Further, the shield body 4 used in the present embodiment is provided with a through-hole penetrating through the inside from the position corresponding to the impedance matching device 51 on the upper surface side toward the central portion 2a in the vertically downward direction. Yes. The through-hole has a function of guiding the inserted power supply 6 to the central portion 2a of the voltage application electrode 2, and the voltage application electrode 2 is inserted by inserting each power supply 6 into the through-hole. Power is supplied to the central portion 2a.

  The conductor 6a constituting the power supply body 6 of the present embodiment has a rod shape, and each power supply body 6 having one end of the conductor 6a connected to the impedance matching device 51 passes through the through hole at the other end. Inserted. Thereafter, the shield body 4 is shielded by the shield body 4 maintained at the ground potential, and is arranged immediately below and led to the central portion 2a. As described above, the conductors 6a arranged in the vertically downward direction of the impedance matching unit 51 are connected to the central portion 2a at one end thereof while maintaining the state. With such connection, power is supplied to the central portion 2a of each voltage application electrode 2 via each power supply body 6.

  In this way, since the power feeding body 6 can be guided in a shielded state to the central portion 2a of each voltage applying electrode 2 and fed to the central portion 2a, the applied voltage to the voltage applying electrode 2 is most evenly distributed. While suppressing the influence of the electromagnetic wave propagation from the conductor 6a and the stray capacitance generated between the conductor 6a and the voltage application electrode 2 while realizing the power supply state, the inflow of high-frequency current to each voltage application electrode 2 is suppressed. can do.

  Further, by forming the conductor 6a constituting the power feeder 6 into a rod shape, the wiring distance from the impedance matching device 51 to the central portion 2a can be minimized, and the reflected wave from the voltage application electrode 2 is suppressed. be able to.

Hereinafter, the outline of the state during film formation in the thin film manufacturing apparatus 10 of the present embodiment as described above will be described.
At the time of film formation, each ground electrode 3 and each stopped flexible substrate 1 are moved toward the frame body 5 by an actuator (not shown), and the frame body 5 and the flexible substrate 1 are attached to the frame body 5. It adheres via the sealing material 16 hold | maintained at the surface which contacts the flexible substrate 1. FIG. As a result, an airtight film formation chamber 8 is formed between the voltage application electrode 2 and the flexible substrate 1.

  The power supply 6 connected as described above feeds the output voltage of the high-frequency power source 52 to the central portion 2a of each voltage application electrode 2, and a high-frequency voltage is applied between the voltage application electrode 2 and the ground electrode 3, respectively. Applied. As a result, plasma is generated in each film forming chamber 8, the reaction gas introduced from the introduction pipe (not shown) is decomposed, and a thin film is formed on the surface of the flexible substrate 1 heated by the heater 3 a of the ground electrode 3. It is formed.

  At this time, the reaction gas supplied to each film forming chamber 8 is exhausted to the exhaust member 7 through an exhaust port 2A provided in each voltage application electrode 2 by a vacuum pump (not shown), and then the shield body 4 and The air is exhausted outside through the holes 4a and 9a provided in the wall body 9, whereby the pressure in each film forming chamber 8 is maintained. At this time, by providing the exhaust ports 2A at positions symmetrical with respect to the central portion 2a of each voltage applying electrode 2, the region where the reaction gas in the film forming chamber 8 can be exhausted equally is expanded. It is possible to suppress the uneven flow of the reaction gas in the film forming chamber 8 that adversely affects the distribution. Furthermore, by providing a plurality of exhaust ports 2A so as to be symmetric with respect to the central portion 2a, it is possible to further suppress the deviation in the flow of the reaction gas as described above.

  As described above, in the thin film manufacturing apparatus 10 according to the present embodiment, it is possible to suppress the deviation of the flow of the reaction gas in the film forming chamber 8 in a wide range, so that a flexible substrate having a wider size. 1 can also be handled.

  As described above, in the thin film manufacturing apparatus 10 according to the present embodiment, the power feeding body 6 is inserted into each through hole provided in the shield body 4 to feed power to the central portion 2a of each voltage applying electrode 2. Thus, it is possible to suppress the inflow of the high-frequency current by the shielding effect while applying the high-frequency voltage to each voltage application electrode 2 in the most balanced manner. Therefore, the potential difference in each voltage application electrode 2 can be suppressed, and the plasma density in the film forming chamber 8 can be made more uniform. This makes it possible to obtain a thin film having a good film thickness distribution even when a high frequency voltage of, for example, about 20 MHz to 100 MHz is applied for the purpose of improving the thin film formation speed.

  Further, by providing the exhaust ports 2A at positions symmetrical with respect to the central portion 2a of each voltage application electrode 2, it is possible to suppress a wide range of reaction gas flows that adversely affect the film thickness distribution. . Therefore, it is possible to form a thin film with good quality even on the flexible substrate 1 that tends to adopt a wider size in recent years. For example, an a-Si thin film used for a solar cell can be formed. A thin film having a good film thickness distribution can be formed even on a flexible substrate to be formed, such as a substrate that has recently been centered on a size of 1 m or more.

  In the above description, the thin film manufacturing apparatus 10 that transports the flexible substrates 1 in parallel and forms a thin film on each surface is used. It is also possible to use a thin film manufacturing apparatus that forms a thin film by transporting three or more rows of flexible substrates. In the case of a single row, a shield body provided with a through-hole having the same function as described above is provided on the back side of the voltage applying electrode disposed opposite to the flexible substrate, that is, on the side opposite to the film forming chamber. It is arranged to keep. In the same manner as described above, a conductor whose entire circumference is covered with an insulator is inserted into the through hole to feed power to the central portion. As a result, the power feeding body can be guided in a shielded state up to the central portion of the voltage application electrode to supply power to the central portion, and a thin film having a good film thickness distribution can be obtained even when a high-frequency voltage is used, as described above. .

  In the above description, the stepping roll method is used, but a roll-to-roll method may be used.

  The thin film manufacturing apparatus of the present invention can be suitably used for forming a thin film photoelectric conversion element, and can be widely used for manufacturing a thin film element in which a plurality of layers are generally formed on a flexible substrate.

It is plane sectional drawing which shows the film-forming chamber part of the thin film manufacturing apparatus of embodiment of this invention. It is sectional drawing in the AA of FIG. It is sectional drawing in the BB line of FIG. It is a plane sectional view of the conventional thin film manufacturing apparatus which conveys two flexible substrates conveyed by making a substrate surface perpendicular, respectively, and forms a thin film on one side of both. It is a figure which shows the detail of the film-forming in the thin film manufacturing apparatus shown in FIG. 4, (a) at the time of film-forming, (b) shows the time of board | substrate conveyance. It is a plane sectional view of the conventional thin film manufacturing apparatus which has a plurality of film formation chambers arranged adjacent to each other. It is a top sectional view showing the film formation room part of the conventional thin film manufacturing device which covered the back and side of the voltage application electrode with the shield. It is a longitudinal cross-sectional view which shows the general electric power feeding system of the thin film manufacturing apparatus shown in FIG. It is sectional drawing of the conventional thin film manufacturing apparatus using the system which supplies electric power to the center part of a voltage application electrode.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Flexible substrate 2 Voltage application electrode 3 Ground electrode 4 Shield body 5 Frame body 6 Feed body 6a Conductor 6b Insulator 7 Exhaust member 8 Deposition chamber 10 Thin film manufacturing apparatus

Claims (5)

In a thin film manufacturing apparatus for forming a thin film on one surface of a flexible substrate to be conveyed,
A voltage application electrode disposed opposite the flexible substrate;
A power supply body for supplying power to the voltage application electrode, comprising a conductor whose entire circumference is covered with an insulator;
A shield body disposed on the back side of the voltage application electrode while maintaining a ground potential, and provided with a through hole for guiding the power feeding body to a central portion of the voltage application electrode;
With
A thin film manufacturing apparatus, wherein the power feeding body is inserted into the through hole to feed power to the central portion. In a thin film manufacturing apparatus for forming a thin film on one surface of each of two rows of flexible substrates conveyed in parallel,
A voltage applying electrode disposed oppositely between the flexible substrates;
A power supply body for supplying power to the voltage application electrode, comprising a conductor whose entire circumference is covered with an insulator;
Shield bodies that are arranged while maintaining a ground potential between the voltage application electrodes, and are each provided with a through hole for guiding the power supply body to the central portion of the voltage application electrodes;
With
A thin film manufacturing apparatus, wherein the power feeding body is inserted into each through hole to feed power to the central portion.   The thin film manufacturing apparatus according to claim 2, wherein the conductor has a bar shape.   An exhaust port for exhausting air from a film forming chamber formed between the voltage application electrode and the flexible substrate is provided at a position symmetrical to the central portion of each voltage application electrode. The thin film manufacturing apparatus according to claim 2, wherein: 5. The thin film according to claim 4, wherein the exhaust port is provided at a position where each of the voltage application electrodes is opposed to each other, and the opposed exhaust ports are connected by an exhaust member having a hollow portion. Manufacturing equipment.

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