JP5199962B2 - Vacuum processing equipment - Google Patents

Description

  The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus that performs processing on a substrate (including a film-formed substrate) using plasma.

  Generally, in order to improve the productivity of a thin film solar cell, it is important to form a high-quality silicon thin film at a high speed and in a large area. As a method for performing such high-speed and large-area film formation, a film formation method by plasma CVD (chemical vapor deposition) is known.

  In order to perform film formation by the plasma CVD method, a plasma generating device that generates plasma is necessary. Examples of the plasma generating device include a capacitively coupled high-frequency plasma generating device, an inductively coupled high-frequency plasma generating device, and a micro A wave plasma generator is known.

  In capacitively coupled high-frequency plasma generators and inductively-coupled high-frequency plasma generators (hereinafter simply referred to as “plasma generators”), the frequency of the high-frequency power applied to the plasma generator is from several tens of MHz to several hundreds of tens. Very high frequency (VHF) method (see Non-Patent Document 1) that increases to MHz, high gas pressure (higher than 1 kPa) in the region where plasma is generated, and between the electrode and the substrate It is known that a high-quality silicon thin film can be formed at high speed by narrowing the distance (narrowing the gap) (see Non-Patent Document 2).

  On the other hand, it is known that a microwave plasma generation apparatus can obtain a uniform high-density plasma under conditions of a low gas pressure (lower than about 1 kPa) as compared with a VHF plasma generation apparatus. Furthermore, it is known that the microwave plasma generation apparatus has an advantageous aspect with respect to handling of high power as compared with the VHF plasma generation apparatus.

  Furthermore, a plasma generation apparatus using a ridge waveguide is also known (see, for example, Patent Documents 1 and 2). In this plasma generation device, a hole (coupling hole) is provided in the lateral direction of the ridge waveguide, and microwaves are supplied from this hole.

Japanese National Publication No. 04-504640 Japanese Patent Publication No.59-047421

H. Curtins, N.M. Wyrsch, M .; Favre and A. V. Shah, Plasma Chemistry and Plasma, Processing, Vol. 7, no. 3, 1987, p. 267-273 T.A. Matsui, M .; Kondo and A.M. Matsuda, Proceeding 3rd World Conference on Photovoltaic Energy Conversion, Osaka (2003), p. 1548-1551 L. Sansonnes, A.M. Pletzer, D.C. Magni, A .; A. Howling, Ch. Hallestain and J.M. P. M.M. Schmitt, Plasma Sources Sci, Technol, 6, (1997), 170.

However, while the VHF plasma generator is suitable for high-speed silicon thin film formation, there is a problem that it is difficult to increase the area due to the influence of standing waves generated on the electrodes (see Non-Patent Document 3).
In other words, for example, when a silicon-based thin film is formed, voltage distribution is generated on the plasma electrode due to the influence of standing waves, which makes it difficult to form a film having a large area and uniform quality.

As a method of solving the problem due to the influence of the standing wave, a method of dividing the plasma electrode can be considered. However, the division of the plasma electrode has a problem in that the structure becomes complicated and the cost of the thin film manufacturing apparatus increases.
Furthermore, in the method of dividing the plasma electrode, adjacent plasma electrodes interfere with each other, so that the adjustment process for equalizing the voltage distribution on the plasma electrode is complicated and it is difficult to solve the above problem.

  On the other hand, as the silicon thin film deposition area increases, the power supplied to the VHF plasma generation apparatus also increases. Then, since the power loss in the power supply circuit for supplying large power also increases, there is a problem that the energy transmission efficiency related to film formation deteriorates.

  In film formation using a microwave plasma generator, there is a problem that impurities released from quartz or the like by plasma are mixed (contaminated) into the film, and the range of film formation conditions is limited to silicon-based thin film production. Therefore, there is a problem that it is difficult to improve the quality of the formed film.

  Further, the conventional microwave plasma generation apparatus has a problem that discharge cannot be performed unless the pressure in the plasma generation region is low, and thus there is a problem that a process for forming a thin film is limited. For example, a crystalline silicon thin film used for a thin-film silicon solar cell is generally required to be formed in a high-pressure environment of 1 kPa or more. However, in such a high-pressure environment, a conventional microwave plasma generator cannot be discharged. There was a problem.

  In the plasma generating apparatus using the ridge waveguide, the microwave power is supplied from the lateral direction to the ridge waveguide. That is, the electric field intensity distribution in the longitudinal direction along the ridge waveguide is determined by the portion of the ridge waveguide called the distribution chamber and the coupling hole for supplying the microwave from the distribution chamber to the ridge waveguide. It depends on the configuration. For this reason, the ridge waveguide and the distribution chamber must have the same length, and if the possible arrangements in the distribution chamber and the coupling hole are limited, the uniformity of the electric field strength distribution is also limited, so that the plasma is uniformized. There is a problem that it becomes difficult (see Patent Document 1).

  The present invention has been made in order to solve the above-described problems, and by increasing the efficiency of energy transmission to the plasma generation region and making the electric field strength distribution uniform, a large-area high-quality film can be obtained. It aims at providing the vacuum processing apparatus which can form into a film uniformly.

In order to achieve the above object, the present invention provides the following means.
The vacuum processing apparatus of the present invention includes a discharge chamber composed of a ridge waveguide having a ridge electrode that is a discharge ridge portion disposed opposite to each other and on which a substrate subjected to plasma processing is disposed, and a high frequency A power source for supplying power to the discharge chamber; an inner conductor and an outer conductor; a coaxial line for guiding the high-frequency power from the power source to the discharge chamber; and a ridge waveguide having a ridge portion; A conversion portion that is arranged adjacent to the extending direction and guides the high-frequency power from the coaxial line to the discharge chamber, and one of the ridge portions is electrically connected to the internal conductor, and the ridge portion The other of these is electrically connected to the outer conductor.

According to the present invention, the high-frequency power supplied from the power source is transmitted to the ridge electrode of the discharge chamber that generates a strong electric field by providing a narrow gap between the ridge portions via the coaxial line and the conversion portion, and between the ridge electrodes. It is used for plasma generation by introducing ionized gas.
Thus, the high frequency power is transmitted to the discharge chamber made of the ridge waveguide through the coaxial line having the inner conductor and the outer conductor and the conversion portion made of the ridge waveguide. Since a good waveguide itself is used for the discharge chamber, a reduction in energy transmission efficiency is prevented.

On the other hand, due to the characteristics of the ridge waveguide, the electric field strength distribution becomes uniform in the direction along the ridge electrode (the vertical cross-sectional direction with respect to the waveguide). Further, by using the ridge waveguide, the area where the electric field intensity distribution is uniform can be easily increased in area.
Therefore, uniform plasma can be generated over a wide range with respect to the substrate.

  In the above invention, the conversion unit is provided at one end and the other end in the direction in which the discharge chamber extends, and the conversion unit provided at the one end includes the power Phase adjustment that adjusts the phase of the reflected power reflected from the converter to the discharge chamber on the converter provided at the other end is electrically connected to the coaxial line connected to It is desirable that a section is provided.

According to the present invention, the high frequency power supplied from the power source is guided to the coaxial line, the conversion unit connected to one end, and the discharge chamber in this order, and transmitted to the ridge electrode.
On the other hand, at least a part of the high-frequency power guided to the discharge chamber is also guided to the conversion unit and the phase adjustment unit connected to the other end, and is reflected by the conversion unit and the phase adjustment unit. Then, in the discharge chamber, a standing wave is generated in the direction in which the discharge chamber extends (the length direction of the waveguide) due to the high-frequency power supplied from the power source and the reflected reflected power.

  By adjusting the phase of the reflected power by the phase adjusting unit, the phase of the standing wave in the discharge chamber is also adjusted. For example, when the phase of the reflected power is changed over time, the phase of the standing wave in the discharge chamber is also changed over time. As a result, the electric field between the ridge electrodes is also made uniform over time.

  That is, in the ridge electrode, the direction along the ridge electrode (perpendicular to the waveguide) is a uniform electric field intensity distribution from the basic characteristics of the ridge waveguide, and the direction in which the discharge chamber extends (the length of the waveguide) (Parallel cross-sectional direction) can be made uniform in time average by phase adjustment. As a result, uniform plasma can be generated on the entire surface of the ridge electrode.

In the above invention, the conversion unit is provided at one end and the other end in the direction in which the discharge chamber extends, and the conversion unit provided at the one end includes one power source and one It is desirable that the other coaxial line is electrically connected, and another power source and another coaxial line are electrically connected to the conversion unit provided at the other end.
Furthermore, it is desirable that at least one of the one power source and the other power source can adjust the phase of the high-frequency power to be supplied.

According to the present invention, high frequency power is supplied from one power source and another power source to the ridge electrode in the discharge chamber. Therefore, a standing wave is generated in the discharge chamber in the direction in which the discharge chamber extends (the length direction of the waveguide) due to the high-frequency power related to one power source and the high-frequency power related to another power source.
By adjusting at least one of the phase of the high-frequency power related to one power supply and the phase of the high-frequency power related to another power supply, the phase of the standing wave in the discharge chamber is also adjusted. For example, when the phase of the high-frequency power related to one power supply is changed over time, the phase of the standing wave in the discharge chamber is also changed over time. As a result, the electric field between the ridge electrodes is also made uniform over time.

  In the above invention, the coaxial line electrically connected to the power source is electrically connected to the conversion portion provided at one end in the extending direction of the discharge chamber, and the discharge chamber extends. It is desirable that a phase adjustment unit for adjusting the phase of the reflected power reflected toward the discharge chamber is provided at the other end in the direction.

According to the present invention, the high frequency power supplied from the power source is guided to the coaxial line, the conversion unit connected to one end, and the discharge chamber in this order, and transmitted to the ridge electrode.
On the other hand, at least a part of the high-frequency power guided to the discharge chamber is also guided to the phase adjusting unit connected to the other end, and is reflected from the phase adjusting unit toward the discharge chamber. Then, in the discharge chamber, a standing wave is generated in the direction in which the discharge chamber extends (the length direction of the waveguide) due to the high-frequency power supplied from the power source and the reflected reflected power.

  By adjusting the phase of the reflected power by the phase adjusting unit, the phase of the standing wave in the discharge chamber is also adjusted. For example, when the phase of the reflected power is changed over time, the phase of the standing wave in the discharge chamber is also changed over time. As a result, the electric field between the ridge electrodes is also made uniform over time.

  In the above invention, a filler is provided at least between the ridge portions in the conversion portion that is electrically connected to the power supply via the coaxial line, and compared with a region where the filler is not provided. The filler preferably has a high dielectric constant.

  According to the present invention, by providing the filler between the ridge portions, the ridge portion can be reduced in size as compared with the case where no filler is provided. For example, the dimension in the direction in which the discharge chamber extends can be shortened.

The conversion part is a ridge waveguide, and in order to form a uniform electric field between the ridge electrodes of the discharge chamber, the dimensions of the ridge part are determined based on the frequency of the supplied high-frequency power. For this reason, the dimensions of the ridge portion cannot be simply changed.
Therefore, as described above, by placing a filler having a high dielectric constant in the space between the ridge portions, while achieving the purpose of forming a uniform electric field between the ridge electrodes of the discharge chamber, Miniaturization can be achieved.

  In the above invention, it is desirable that at least the discharge chamber is disposed inside the decompression vessel.

  According to the present invention, since the discharge chamber having the ridge electrode for generating plasma in between is disposed inside the decompression vessel whose interior is decompressed, the discharge chamber itself has a pressure difference between the inside of the discharge chamber and the outside. Need not be strong enough to withstand. Further, it is not necessary to have a sealed structure that is in a reduced pressure state by the discharge chamber itself. Therefore, compared with the case where the discharge chamber itself has a strength that can withstand the pressure difference, the configuration of the discharge chamber can be simplified, and the degree of freedom of the configuration is increased.

  Since at least the discharge chamber in which plasma is generated needs to be disposed inside the decompression chamber, for example, the entire discharge chamber and the conversion unit may be disposed inside the decompression vessel.

  In the above invention, the pair of ridge electrodes are disposed to face each other, the substrate is disposed on the inner surface of one of the pair of ridge electrodes, and the temperature of the substrate is adjusted on the outer surface of one of the ridge electrodes. A temperature control unit is provided, and on the other outer surface of the pair of ridge electrodes, the gas inside the discharge chamber is exhausted along the other of the ridge electrodes through at least a part of the other of the ridge electrodes. It is desirable that an exhaust unit for supplying gas and a supply unit for supplying a gas used for generating plasma are provided.

  According to the present invention, since the installation positions of the temperature control unit, the supply unit, the exhaust unit, and the like are different from the installation positions of the coaxial line and the conversion unit, they do not interfere with each other.

Specifically, the temperature control unit and the like are disposed adjacent to the ridge electrode in the discharge chamber, while the conversion unit is disposed adjacent to the direction in which the discharge chamber extends, and the coaxial line extends in the direction in which the conversion unit extends. It is arranged extending in the intersecting direction. Therefore, the temperature adjustment unit and the conversion unit do not interfere with each other with respect to the arrangement position.
As a result, the degree of design freedom in the discharge chamber or the like is increased.

  In the above invention, the substrate is movable between the ridge electrodes in a direction intersecting the direction in which the discharge chamber extends, and the substrate is located in a region where the substrate moves in the discharge chamber. It is desirable that a pair of openings for entering and exiting the discharge chamber is provided.

  According to the present invention, the substrate is carried into the discharge chamber from one of the pair of openings and guided between the ridge electrodes. Between the ridge electrodes, a plasma process such as plasma CVD is performed on the substrate. The substrate subjected to the plasma treatment is carried out of the discharge chamber from the other of the pair of openings.

  Furthermore, substrate loading, plasma processing to the substrate, and substrate unloading can be performed continuously. Therefore, by continuously forming a film on a moving substrate, a substrate having a larger area than the ridge electrode can be continuously subjected to plasma treatment, and productivity can be improved.

  Further, a plurality of discharge chambers may be arranged in the moving direction of the substrate so that one substrate is continuously carried into the plurality of discharge chambers. In this case, different plasma treatments can be performed in each discharge chamber.

  In the above invention, a plurality of the discharge chambers are provided, and a transport unit that transports the substrate from one discharge chamber to another discharge chamber is provided while the substrate is carried into and out of the discharge chamber. It is desirable that

  According to the present invention, a substrate that has been subjected to plasma processing in one discharge chamber is carried into another discharge chamber by the transport unit, and further subjected to plasma processing in the other discharge chamber. The plasma treatment performed in the other discharge chamber may be the same treatment as the plasma treatment in one discharge chamber, or may be a different treatment.

  According to the vacuum processing apparatus of the present invention, high-frequency power is similarly transmitted to the discharge chamber made of the ridge waveguide through the coaxial line having the inner conductor and the outer conductor and the conversion portion made of the ridge waveguide. Thus, it is possible to uniformly form a high-quality film with a large area by improving the efficiency of energy transmission to the plasma generation region and making the electric field intensity distribution uniform.

It is a schematic diagram explaining schematic structure of the film forming apparatus which concerns on the 1st Embodiment of this invention. It is AA sectional view explaining the structure of the process chamber of FIG. It is a schematic diagram explaining the dimension in the process chamber of FIG. It is a BB sectional view explaining the composition of the converter of Drawing 1. It is a graph explaining the electric field strength distribution in the process chamber of FIG. It is a schematic diagram explaining distribution of the electric line of force in the process chamber of FIG. It is a schematic diagram explaining schematic structure of the film forming apparatus which concerns on the 2nd Embodiment of this invention. It is a schematic diagram explaining schematic structure of the film forming apparatus which concerns on the 3rd Embodiment of this invention. It is a sectional view explaining the composition of the 1st converter of Drawing 8, and the 2nd converter. It is a schematic diagram explaining schematic structure of the film forming apparatus which concerns on the 4th Embodiment of this invention. It is a schematic diagram explaining the other Example of the vacuum vessel of FIG. It is the schematic explaining the structure of the film forming apparatus which concerns on the 5th Embodiment of this invention. FIG. 13 is a cross-sectional view illustrating a configuration in the process chamber of FIG. 12. It is the schematic explaining the structure of the film forming apparatus which concerns on the 6th Embodiment of this invention. It is a schematic diagram explaining the structure of the film forming apparatus which concerns on the 7th Embodiment of this invention. It is a schematic diagram explaining the structure of the film forming apparatus which concerns on the 8th Embodiment of this invention. It is a schematic diagram explaining the state which the termination | terminus board of FIG. 16 moves.

[First Embodiment]
Hereinafter, a film forming apparatus according to a first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a schematic diagram illustrating a schematic configuration of a film forming apparatus according to the present embodiment. FIG. 2 is a cross-sectional view taken along line AA for explaining the configuration of the process chamber of FIG. FIG. 3 is a schematic diagram for explaining dimensions in the process chamber of FIG. 4 is a cross-sectional view taken along the line B-B for explaining the configuration of the converter of FIG. 1.

  In this embodiment, the present invention relates to an amorphous silicon used for an amorphous solar cell, a microcrystalline solar cell, a TFT for liquid crystal display (Thin Film Transistor), etc., on a large-area substrate having a side exceeding 1 m. Description will be made by applying to a film forming apparatus (vacuum processing apparatus) 1 capable of performing a film forming process of a film made of crystalline silicon such as microcrystalline silicon, silicon nitride or the like.

  As shown in FIG. 1, the film forming apparatus 1 includes a process chamber (discharge chamber) 2, a first converter (converter) 3A, a second converter 3B, and a first coaxial line (coaxial line) 4A. A power source 5, a matching unit 6, a second coaxial line 4B, a phase adjuster (phase adjusting unit) 7, a coaxial short-circuit unit 8, an exhaust unit 9, and a gas supply unit 10. It has been.

As shown in FIGS. 1 to 3, the process chamber 2 is a portion that performs plasma processing on the substrate S disposed therein.
The process chamber 2 is a part made of a conductive non-magnetic or weak magnetic material such as aluminum or an aluminum alloy material, and is formed in a so-called double ridge waveguide tube. On the other hand, since the inside of the process chamber 2 is evacuated to about 0.1 kPa to 10 kPa by the exhaust unit 9, the process chamber 2 has a structure that can withstand a pressure difference between the inside and outside of the process chamber 2. Has been.

As shown in FIGS. 2 and 3, the process chamber 2 is provided with a pair of ridge electrodes 21 and 21.
The ridge electrode 21 constitutes a ridge portion in the process chamber 2 that is a double ridge waveguide, and is a flat plate-like portion disposed to face each other.

Here, the direction in which the process chamber 2 extends is the L direction (left and right direction in FIG. 1), the direction orthogonal to the pair of ridge electrodes 21 and 21, and the direction in which the lines of magnetic force extend is the E direction (up and down direction in FIG. 1). A direction along the pair of ridge electrodes 21 and 21 and perpendicular to the E direction is defined as an H direction (a direction perpendicular to the paper surface in FIG. 1).
Further, the distance from one ridge electrode 21 to the other ridge electrode 21 and the distance along the E direction is a (mm), and the dimension of the ridge electrode 21 in the H direction is b (mm).

  Then, the size (a, b) relating to the pair of ridge electrodes 21 and 21 is determined so that an appropriate film is formed on the substrate S. Specifically, it is determined based on Paschen's law and conditions for performing proper film formation.

  For example, the distance a between the pair of ridge electrodes 21 and 21 is about 5 mm to 30 mm in order to set the gap from the surface of the substrate S to the ridge electrode 21 to about 1 mm to 25 mm when the substrate S is arranged. An example can be given.

  On the other hand, the dimension b in the H direction of the ridge electrode 21 can form a uniform film without being affected by the dimension b when the method of forming the film while moving the substrate S is adopted. Not specified.

FIG. 5 is a graph for explaining the electric field strength distribution in the process chamber of FIG. FIG. 6 is a schematic diagram for explaining the distribution of lines of electric force in the process chamber of FIG.
In the magnetic field strength distribution in the process chamber 2, as shown in FIG. 5, the magnetic field strength increases between the pair of ridge electrodes 21 and 21, and the magnetic field strength becomes substantially constant.
Furthermore, the distribution of the electric lines of force in the process chamber 2 is concentrated between the pair of ridge electrodes 21 and 21, as shown in FIG. Line up in parallel. These are brought about by the characteristics of the ridge waveguide including the double ridge waveguide.

  As the substrate S, a translucent glass substrate can be exemplified. For example, a substrate having a vertical and horizontal size of 1.4 m × 1.1 m and a thickness of 3.0 mm to 4.5 mm can be exemplified. .

As shown in FIGS. 1 and 4, the first converter 3 </ b> A is a part to which high frequency power supplied from the power source 5 is introduced, and transmits the supplied high frequency power to the process chamber 2.
The first converter 3A is formed of a conductive non-magnetic or weak magnetic material such as an aluminum material electrically connected to an end of the process chamber 2 in the direction (L direction) in which the process chamber 2 extends. These parts are formed in a so-called double ridge waveguide tube. Further, the first converter 3A converts the transmission mode of the high-frequency power into the parallel plate mode using the characteristics of the ridge waveguide.

  On the other hand, like the process chamber 2, the inside of the first converter 3 </ b> A is brought into a vacuum state of about 0.1 kPa to 10 kPa by the exhaust unit 9. Therefore, the first converter 3A has a structure that can withstand a pressure difference between the inside and the outside of the first converter 3A.

As shown in FIGS. 1 and 4, the first converter 3 </ b> A is provided with a pair of ridge portions 31 and 31.
The ridge portion 31 constitutes a ridge portion in the first converter 3 </ b> A that is a double ridge waveguide, and is a flat plate-like portion disposed to face each other.

  The inner conductor 41 in the first coaxial line 4A is electrically connected to one of the pair of ridge portions 31, 31, for example, the lower ridge portion 31 in FIG. The outer conductor 42 in the first coaxial line 4A is electrically connected to the other of the pair of ridges 31, 31, for example, the upper ridge 31 in FIG.

As shown in FIG. 1, the second converter 3 </ b> B relates to the phase adjustment of the reflected power together with the second coaxial line 4 </ b> B, the phase adjuster 7, and the coaxial short-circuit portion 8.
The second converter 3B is a component formed of a conductive material such as an aluminum material electrically connected to an end of the process chamber 2 in the direction (L direction) in which the process chamber 2 extends. It is formed in a double ridge waveguide tube.

  On the other hand, like the process chamber 2, the inside of the second converter 3B is brought into a vacuum state of about 0.1 kPa to 10 kPa by the exhaust unit 9. Therefore, the second converter 3B has a structure that can withstand a pressure difference between the inside and the outside of the second converter 3B.

The second converter 3B is provided with a pair of ridge portions 31, 31 as shown in FIGS.
The ridge portion 31 constitutes a ridge portion in the second converter 3B, which is a double ridge waveguide, and is a flat plate portion disposed opposite to each other.

  The inner conductor 41 in the second coaxial line 4B is electrically connected to one of the pair of ridge portions 31, 31, for example, the lower ridge portion 31 in FIG. The outer conductor 42 of the second coaxial line 4B is electrically connected to the other of the pair of ridges 31, 31, for example, the upper ridge 31 in FIG.

The double ridge waveguide constituting the process chamber 2, the first converter 3A, and the second converter 3B can be a known one, and is not particularly limited.
Further, the process chamber 2, the first converter 3A, and the second converter 3B may be configured by a double ridge waveguide as shown in FIGS. 1 to 3, or may be configured by a single ridge waveguide. There is no particular limitation.

As shown in FIG. 1, the first coaxial line 4 </ b> A guides the high frequency power supplied from the power source 5 to the first converter 3 </ b> A. A power supply 5 and a matching unit 6 are electrically connected to the first coaxial line 4A.
As shown in FIG. 4, the first coaxial line 4 </ b> A is provided with an inner conductor 41 and an outer conductor 42. The inner conductor 41 is formed from a conductor such as a metal extending in a rod shape or a linear shape. The outer conductor 42 is formed of a conductor such as a metal formed in a cylindrical shape in which the inner conductor 41 is disposed. A derivative (not shown) is disposed between the inner conductor 41 and the outer conductor 42. Further, the inner conductor 41 in the first coaxial line 4A is electrically connected to the lower ridge portion 31 in FIG. 4, and the outer conductor 42 in the first coaxial line 4A is electrically connected to the upper ridge portion 31. It is connected to the.
In addition, as a structure of 4 A of 1st coaxial lines, a well-known structure can be used and it does not specifically limit.

The power source 5 supplies high frequency power to the process chamber 2 as shown in FIG. For example, high frequency power having a frequency of 13.56 MHz or more, preferably 30 MHz to 400 MHz (VHF band to UHF band) is supplied.
Compared to a conventional power feeding method using a coaxial line, the size of the double ridge waveguide is increased at 13.56 MHz, and therefore, 30 MHz or more is preferable in order to further utilize the features of the present invention. On the other hand, as the frequency becomes higher, the influence of standing waves generated in the direction in which the process chamber 2 extends becomes more prominent.

The power source 5 is electrically connected to the first coaxial line 4A and supplies high-frequency power to the first converter 3A via the matching unit 6 and the first coaxial line 4A. The high frequency power supplied to the first converter 3A is transmitted to the process chamber 2 after the transmission mode is converted to the parallel plate mode.
The power source 5 can be a known high-frequency power source and is not particularly limited.

As shown in FIG. 1, the second coaxial line 4 </ b> B relates to the phase adjustment of the reflected power together with the second converter 3 </ b> B, the phase adjuster 7, and the coaxial short-circuit portion 8.
As shown in FIG. 4, the second coaxial line 4 </ b> B is provided with an inner conductor 41 and an outer conductor 42. The inner conductor 41 is formed from a conductor such as a metal extending in a rod shape or a linear shape. The outer conductor 42 is formed of a conductor such as a metal formed in a cylindrical shape in which the inner conductor 41 is disposed. A derivative (not shown) is disposed between the inner conductor 41 and the outer conductor 42. Further, the inner conductor 41 in the first coaxial line 4B is electrically connected to the lower ridge portion 31 in FIG. 4, and the outer conductor 42 in the first coaxial line 4B is electrically connected to the upper ridge portion 31. It is connected to the.
In addition, as a structure of the 2nd coaxial line 4B, a well-known structure can be used and it does not specifically limit.

As shown in FIG. 1, the phase adjuster 7 adjusts the phase of reflected power from the second converter 3 </ b> B toward the process chamber 2 together with the second converter 3 </ b> B, the second coaxial line 4 </ b> B, and the coaxial short-circuit portion 8. It is.
The phase adjuster 7 is electrically connected to the second coaxial line 4B, and is disposed between the second converter 3B and the coaxial short-circuit portion 8 serving as an end of transmission. The phase adjuster 7 is preferably one that can adjust the phase of the phase adjustment cycle from several Hz to several tens of kHz depending on the plasma processing content.
In addition, as the phase adjuster 7, a well-known thing can be used and it does not specifically limit.

As shown in FIG. 1, the coaxial short-circuit portion 8 electrically connects and short-circuits the inner conductor 41 and the outer conductor 42 in the second coaxial line 4 </ b> B.
The coaxial short circuit part 8 is arrange | positioned at the edge part in the 2nd coaxial line 4B. The coaxial short-circuit portion 8 is preferably one that totally reflects as an end.
In addition, as the coaxial short circuit part 8, a well-known thing can be used and it does not specifically limit.

As shown in FIG. 1, the exhaust unit 9 exhausts a gas (fluid) from the inside of the process chamber 2, the first converter 3 </ b> A, and the second converter 3 </ b> B, thereby reducing the pressure to a vacuum state.
In addition, as the exhaust part 9, a well-known vacuum pump etc. can be used and it does not specifically limit.

As shown in FIG. 1, the gas supply unit 10 uses a mother gas (for example, SiH ₄ gas) containing a source gas to be formed on the surface of the substrate S used for plasma generation, as a pair of ridge electrodes 21 and 21. Supply in between.

Next, a film forming process that is a plasma process for the substrate S in the film forming apparatus 1 having the above-described configuration will be described.
The substrate S is disposed on the ridge electrode 21 in the process chamber 2 as shown in FIG. Thereafter, as shown in FIG. 1, a gas such as air is exhausted from the inside of the process chamber 2, the first converter 3 </ b> A, and the second converter 3 </ b> B by the exhaust unit 9.

Further, high frequency power having a frequency of 13.56 MHz or more, preferably 30 MHz to 400 MHz, is supplied from the power source 5 to the ridge electrode 21 of the process chamber 2, and between the gas supply unit 10 and the pair of ridge electrodes 21, 21, For example, a mother gas such as SiH ₄ gas is supplied.
At this time, the exhaust amount of the exhaust unit 9 is controlled to maintain a vacuum state of about 0.1 kPa to 10 kPa inside the process chamber 2 or the like, in other words, between the pair of ridge electrodes 21 and 21.

  It should be noted that the positional relationship among the gas supply unit 10, the exhaust unit 9, and the process chamber 2 is not limited to the position shown by the arrow in FIG. For example, exhaust may be performed from at least a part of the exhaust portion 9 and the ridge electrode 21 of the process chamber 2 and may be performed from the lower portion of the process chamber 2.

  The high frequency power supplied from the power source 5 is transmitted to the first converter 3A via the matching unit 6 by the first coaxial line 4A. The matching unit 6 adjusts values such as impedance in a system that transmits high-frequency power. In the first converter 3A, the transmission mode of the high frequency power is converted into the parallel plate mode.

  The high frequency power supplied to the first converter 3A is transmitted to the process chamber 2, and an electric field having a substantially uniform intensity distribution is formed between the pair of ridge electrodes 21 and 21 in the H direction, which is a direction along the ridge electrode. (See FIGS. 5 and 6).

  On the other hand, a part of the high-frequency power transmitted to the process chamber 2 is transmitted to the second converter 3B, the second coaxial line 4B, the phase adjuster 7, and the coaxial short-circuit portion 8 and reflected at the coaxial short-circuit portion 8. Is done. A standing wave is formed in the process chamber 2 by the input power supplied from the power source 5 and the reflected reflected power. When the position (phase) of the standing wave is fixed, the L-direction electric field intensity distribution in the pair of ridge electrodes 21 and 21 is biased.

  Therefore, the position of the standing wave formed in the process chamber 2 is adjusted by adjusting the phase of the reflected power by the phase adjuster 7. Thereby, the distribution of the electric field strength in the L direction, which is the direction in which the process chamber 2 extends, in the pair of ridge electrodes 21 and 21 is made uniform on a time average basis.

Specifically, the phase of the reflected power is adjusted so that the position of the standing wave moves in the L direction in a sine wave shape, a triangular wave shape, or a staircase (step) shape as time passes.
The range in which the standing wave moves, the method of moving the standing wave (Sin wave shape, triangular wave shape, stepped shape, etc.) and the optimization of the phase adjustment period are the power distribution, the light emission distribution from the plasma, This is performed based on the distribution of plasma density, the distribution of characteristics related to the formed film, and the like. Examples of characteristics relating to the film include film thickness, film quality, and characteristics as a semiconductor such as a solar cell.

  In such a state, the mother gas is ionized between the pair of ridge electrodes 21 and 21, and plasma is formed. A uniform film such as an amorphous silicon film or a crystalline silicon film is formed on the substrate S by the formed plasma.

According to the above configuration, the high-frequency power supplied from the power source 5 is transmitted to the pair of ridge electrodes 21 and 21 in the process chamber 2 via the first coaxial line 4A and the first converter 3A, and the pair of ridge electrodes Used for plasma generation between 21 and 21.
As described above, the high-frequency power is transferred to the process chamber 2 made of the ridge waveguide through the first coaxial line 4A having the inner conductor 41 and the outer conductor 42 and the first converter 3A made of the ridge waveguide. Since it is transmitted, the efficiency of energy transmission can be improved.

  On the other hand, due to the characteristics of the ridge waveguide in which the ridge portion is formed, the electric field intensity distribution in the direction along the ridge electrode (H direction) is almost uniform between the pair of ridge electrodes 21 and 21. Further, by using the ridge waveguide, the area where the electric field intensity distribution is almost uniform can be easily increased because the transmission loss is small.

By adjusting the phase of the reflected power by the phase adjuster 7, the phase of the standing wave in the process chamber 2 is also adjusted. For example, when the phase of the reflected power is temporally changed, the phase of the standing wave in the process chamber 2 extending in the direction (L direction) is also temporally changed. As a result, the electric field in the direction (L direction) in which the process chamber 2 extends between the pair of ridge electrodes 21 and 21 can also be uniformed on a time average basis.
Therefore, a uniform plasma can be generated over a wide range on the substrate S, and a high-quality film can be uniformly formed when forming a film on a large-area substrate.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG.
The basic configuration of the film forming apparatus of this embodiment is the same as that of the first embodiment, but the configuration relating to the supply of high-frequency power is different from that of the first embodiment. Therefore, in the present embodiment, only the configuration relating to the supply of high-frequency power will be described using FIG. 7, and description of other components and the like will be omitted.
FIG. 7 is a schematic diagram illustrating a schematic configuration of the film forming apparatus according to the present embodiment.
In addition, about the structure same as 1st Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

  In the film forming apparatus 101, as shown in FIG. 7, the process chamber 2, the first converter 3A, the second converter (converter) 3B, the first coaxial line (one coaxial line) 104A, First power source (one power source) 105A, first circulator 107A, first matching unit 106A, second coaxial line (other coaxial line) 104B, second power source (other power source) 105B, second A circulator 107B, a second matching unit 106B, an exhaust unit 9, and a gas supply unit 10 are mainly provided.

As shown in FIG. 7, the first converter 3A and the second converter 3B are portions to which the high frequency power supplied from the first power source 105A and the second power source 105B are introduced, respectively. Electric power is transmitted to the process chamber 2.
Further, the first converter 3A and the second converter 3B convert the transmission mode of the high-frequency power into the parallel plate mode using the characteristics of the ridge waveguide.

As shown in FIG. 7, the first coaxial line 104A and the second coaxial line 104B convert the high frequency power supplied from the first power source 105A and the second power source 105B to the first converter 3A and the second converter 3B, respectively. It leads to.
A first power source 105A and a first matching unit 106A are electrically connected to the first coaxial line 104A. On the other hand, a second power source 105B and a second matching unit 106B are electrically connected to the second coaxial line 104B.

  The first power supply 105A and the second power supply 105B transmit high frequency power to the process chamber 2 as shown in FIG. For example, high frequency power having a frequency of 13.56 MHz or more, preferably 30 MHz to 400 MHz is supplied, and the phase of the supplied high frequency power can be adjusted.

The first power source 105A is electrically connected to the first coaxial line 104A, and supplies high-frequency power to the first converter 3A via the first coaxial line 104A. On the other hand, the second power source 105B is electrically connected to the second coaxial line 104B and supplies high-frequency power to the second converter 3B via the second coaxial line 104B.
The high frequency power supplied to the first converter 3A and the second converter 3B is transmitted to the process chamber 2 after the transmission mode is converted into the parallel plate mode.

  The first circulator 107A and the second circulator 107B guide the high-frequency power supplied from the first power source 105A and the second power source 105B to the process chamber 2, respectively, and travel directions with respect to the first power source 105A and the second power source 105B Is to prevent high-frequency power having a different value from being input.

  As shown in FIG. 7, the first circulator 107A is electrically connected to the first coaxial line 104A and is disposed between the first power source 105A and the first matching unit 106A. On the other hand, the second circulator 107B is electrically connected to the second coaxial line 104B and is disposed between the second power source 105B and the second matching unit 106B.

  The first circulator 107A guides the high frequency power traveling from the first converter 3A toward the first power source 105A to an absorption unit (not shown) that absorbs the power, whereby the first power source 105A receives the high frequency power. Prevent input. Similarly, the second circulator 107B prevents high-frequency power from being input to the second power source 105B by guiding high-frequency power traveling toward the second power source 105B to an absorption unit (not shown).

  In addition, a well-known circulator can be used as the 1st circulator 107A and the 2nd circulator 107B, It does not specifically limit.

Next, a film forming process that is a plasma process for the substrate S in the film forming apparatus 101 having the above-described configuration will be described.
When the substrate S is arranged in the process chamber 2 and a gas such as air is exhausted from the inside of the process chamber 2, high-frequency power is supplied from the first power source 105A and the second power source 105B to the process chamber 2 as shown in FIG. While being supplied, a mother gas containing a source gas for forming a film on the surface of the substrate S such as SiH ₄ gas is supplied from the gas supply unit 10.

The high frequency power supplied from the first power source 105A is transmitted to the first converter 3A via the first circulator 107A and the first matching unit 106A through the first coaxial line 104A. The first matching unit 106A adjusts values such as impedance in a system that transmits high-frequency power. In the first converter 3A, the transmission mode of the high frequency power is converted into the parallel plate mode.
The high frequency power supplied to the first converter 3A is transmitted to the process chamber 2, and an electric field having a substantially uniform intensity distribution is formed between the pair of ridge electrodes 21 and 21 in the H direction, which is a direction along the ridge electrode. Is done.

  Thereafter, the high frequency power supplied from the first power source 105A travels from the second converter 3B to the second coaxial line 104B and is input to the second circulator 107B via the second matching unit 106B. The high-frequency power is guided to the absorption unit by the second circulator 107B, absorbed by the absorption unit, and converted into heat or the like.

  Similarly to the high frequency power supplied from the first power source 105A, the high frequency power supplied from the second power source 105B is transmitted to the second converter 3B, and the transmission mode is converted into the parallel plate mode. The high frequency power supplied to the second converter 3B is transmitted to the process chamber 2 to form an electric field between the pair of ridge electrodes 21 and 21.

  Thereafter, the high-frequency power supplied from the second power source 105B travels from the first converter 3A to the first coaxial line 104A and is input to the first circulator 107A via the first matching unit 106A. The high-frequency power is guided to the absorption unit by the first circulator 107A, absorbed by the absorption unit, and converted into heat or the like.

  On the other hand, a standing wave is formed in the process chamber 2 by the high frequency power supplied from the first power source 105A and the high frequency power supplied from the second power source 105B. At this time, if the phase of the high frequency power supplied from the first power source 105A and the second power source 105B is fixed, the position (phase) of the standing wave is fixed, and the process chamber 2 in the pair of ridge electrodes 21 and 21 is fixed. The distribution of the electric field strength in the L direction, which is the direction in which the current extends, is biased.

Therefore, the position of the standing wave formed in the process chamber 2 is adjusted by adjusting the phase of the high frequency power supplied from at least one of the first power supply 105A and the second power supply 105B. Thereby, the distribution of the electric field intensity in the L direction in the pair of ridge electrodes 21 and 21 is made uniform on a time average basis.
The position of the standing wave is adjusted by the same method as in the first embodiment.

  In such a state, the mother gas is ionized between the pair of ridge electrodes 21 and 21, and plasma is formed. A uniform film such as an amorphous silicon film or a crystalline silicon film is formed on the substrate S by the formed plasma.

According to the above configuration, high frequency power is supplied from the first power source 105 </ b> A and the second power source 105 </ b> B to the pair of ridge electrodes 21, 21 in the process chamber 2. Therefore, a standing wave is generated in the process chamber 2 by the high frequency power related to the first power source 105A and the high frequency power related to the second power source 105B.
By adjusting at least one of the phase of the high frequency power related to the first power source 105A and the phase of the high frequency power related to the second power source 105B, the phase of the standing wave in the process chamber 2 is also adjusted. For example, when the phase of the high-frequency power related to the first power supply 105A is temporally changed, the phase of the standing wave in the process chamber 2 is also temporally changed. As a result, the electric field between the pair of ridge electrodes 21 and 21 is also made uniform on a time average basis.

[Third Embodiment]
Next, a third embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the film forming apparatus of this embodiment is the same as that of the second embodiment, but the configurations of the first converter and the second converter are different from those of the second embodiment. Therefore, in this embodiment, only the configuration of the first converter and the second converter will be described with reference to FIGS. 8 and 9, and description of other components and the like will be omitted.
FIG. 8 is a schematic diagram illustrating a schematic configuration of the film forming apparatus according to the present embodiment.
In addition, about the structure same as 2nd Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

  As shown in FIG. 8, the film forming apparatus 201 includes a process chamber 2, a first converter (converter) 203A, a second converter (converter) 203B, a first coaxial line 104A, Power supply 105A, first circulator 107A, first matching unit 106A, second coaxial line 104B, second power source 105B, second circulator 107B, second matching unit 106B, exhaust unit 9, and gas supply The unit 10 is mainly provided.

As shown in FIG. 8, the first converter 203A and the second converter 203B are portions to which the high frequency power supplied from the first power source 105A and the second power source 105B are introduced, respectively. Electric power is transmitted to the process chamber 2.
Furthermore, the first converter 203A and the second converter 203B convert the transmission mode of high-frequency power into a parallel plate mode using the characteristics of the ridge waveguide.

FIG. 9 is a cross-sectional view illustrating the configuration of the first converter and the second converter of FIG.
As shown in FIG. 9, the first converter 203 </ b> A and the second converter 203 </ b> B are provided with a pair of ridge portions 31 and 31 and a filler 204. The filler 204 is disposed between at least the pair of ridges 31 and 31 and has a higher dielectric constant than a region where the filler 204 is not provided.

  In this embodiment, description will be made by applying to an example in which alumina (aluminum oxide) having a dielectric constant ε of 9.4 is used as the filler 204. Further, description will be made by applying to an example in which the filler 204 is disposed in the vicinity of the region where the first coaxial line 104A and the second coaxial line 104B are connected in the pair of ridge portions 31, 31.

  Since the film forming process which is the plasma process for the substrate S in the film forming apparatus 201 having the above-described configuration is the same as the film forming process in the second embodiment, the description thereof is omitted.

  According to said structure, by providing the filler 204 between a pair of ridge parts 31 and 31, a pair of ridge parts 31 and 31 can be reduced compared with the case where the filler 204 is not provided. . In the case of the present embodiment, the dimension in the L direction can be shortened to about half.

The first converter 203A and the second converter 203B are ridge waveguides. In order to form a uniform electric field between the pair of ridge electrodes 21 and 21 in the process chamber 2, the dimensions of the ridge portion 31 are supplied. Determined based on the frequency of the high frequency power to be generated. For this reason, the dimensions of the ridge 31 cannot be simply changed.
Therefore, as described above, a uniform electric field is formed between the pair of ridge electrodes 21 and 21 in the process chamber 2 by disposing the filler 204 having a high dielectric constant between the pair of ridge electrodes 21 and 21. The ridge portion 31 can be reduced in size while achieving the object.

  For example, as in this embodiment, when the filler 204 having a high frequency power frequency of about 60 MHz and a dielectric constant ε of 9.4 is used, the dimension in the L direction of the ridge portion 31 is about half ( About 2500 mm to about 1100 mm). Thereby, the film forming apparatus 201 can be made compact.

[Fourth Embodiment]
Next, a fourth embodiment of the present invention will be described with reference to FIG. 10 and FIG.
The basic configuration of the film forming apparatus of this embodiment is the same as that of the third embodiment, but the third embodiment maintains a vacuum state inside the process chamber, the first converter, and the second converter. The configuration is different. Therefore, in the present embodiment, only the configuration for maintaining the vacuum state will be described with reference to FIGS. 10 and 11, and description of other components and the like will be omitted.
FIG. 10 is a schematic diagram illustrating a schematic configuration of the film forming apparatus according to the present embodiment.
In addition, about the structure same as 3rd Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

  As shown in FIG. 10, the film forming apparatus 301 includes a process chamber (discharge chamber) 302, a first converter (converter) 303A, a second converter (converter) 303B, and a vacuum vessel (depressurized vessel). ) 304, the first coaxial line 104A, the first power source 105A, the first circulator 107A, the first matching unit 106A, the second coaxial line 104B, the second power source 105B, the second circulator 107B, A two matching unit 106B, an exhaust unit 9, and a gas supply unit 10 are mainly provided.

As shown in FIG. 10, the process chamber 302 is a portion that performs plasma processing on the substrate S disposed inside.
The process chamber 302 is a part formed of a conductive non-magnetic or weak magnetic material such as an aluminum material, and is formed in a so-called double ridge waveguide tube. In the process chamber 302, as shown in FIG. 10, a pair of ridge electrodes 21 and 21 are provided.

  As shown in FIG. 10, the first converter 303A and the second converter 303B are portions to which the high frequency power supplied from the first power source 105A and the second power source 105B are introduced, respectively, and the supplied high frequency Electric power is transmitted to the process chamber 302.

  The first converter 303A and the second converter 303B are formed of a conductive material such as an aluminum material that is electrically connected to the end of the process chamber 2 in the direction (L direction) in which the process chamber 2 extends. A component that is formed in a so-called double ridge waveguide tube. Further, the first converter 303A and the second converter 303B convert the transmission mode of the high frequency power into the parallel plate mode using the characteristics of the ridge waveguide.

  The process chamber 302, the first converter 303A, and the second converter 303B disposed inside the vacuum vessel 304 are compared with the process chamber 2, the first converter 3A, and the second converter 3B of the first embodiment. Thus, a configuration that can withstand the pressure difference between the inside and outside of the process chamber 302 is not required. For example, regarding the wall thickness of the process chamber 2 and the like, the wall thickness of 200 mm or more is required in the first embodiment, and the wall thickness of approximately 50 mm or more is required even as a structure reinforced with rib materials. The wall thickness of the process chamber 302 and the like in this embodiment is thin enough to withstand deformation due to its own weight.

As shown in FIG. 10, the vacuum vessel 304 stores therein a process chamber 302, a first converter 303 </ b> A, and a second converter 303 </ b> B.
Therefore, the vacuum vessel 304 has a structure that can withstand the pressure difference. For example, a structure formed of stainless steel (SUS304 material in JIS standard), a general structural rolling material (SS material in JIS standard), or a rib material can be used.

  The exhaust unit 9 is connected to the vacuum vessel 304. Therefore, the inside of the vacuum vessel 304 and the inside of the process chamber 302, the first converter 303A, and the second converter 303B are brought into a vacuum state of about 0.1 kPa to 10 kPa by controlling the exhaust amount of the exhaust unit 9. The

  Note that the positional relationship among the gas supply unit 10, the exhaust unit 9, and the process chamber 302 is not limited to the position shown by the arrow in FIG. 10. For example, exhaust may be performed from at least a part of the exhaust unit 9 and the ridge electrode 21 of the process chamber 2 and may be performed from above the vacuum container 304.

  Since the film forming process which is the plasma process for the substrate S in the film forming apparatus 201 having the above-described configuration is the same as the film forming process in the second embodiment, the description thereof is omitted.

  According to the above configuration, the process chamber 302, the first converter 303A, and the second converter 303B are disposed inside the vacuum vessel 304 that is evacuated, so the process chamber 302, the first converter It is not necessary for 303A and the second converter 303B itself to have the strength to withstand deformation due to their own weight and to withstand the pressure difference between the inside and the outside. Therefore, compared with the case where the process chamber 302 itself has a strength that can withstand the pressure difference, the configuration of the process chamber 302, the first converter 303A, and the second converter 303B can be simplified. The degree of freedom can be increased.

FIG. 11 is a schematic view for explaining another embodiment of the vacuum container of FIG.
The vacuum vessel 304 may house the process chamber 302, the first converter 303A, and the second converter 303B as shown in FIG. 10, or the process as shown in FIG. Only the chamber 302 may be housed therein, and is not particularly limited.

  In this case, a vacuum window (window) 305 for maintaining a vacuum state in the process chamber 302 is provided between the process chamber 302 and the first converter 303A and between the process chamber 302 and the second converter 303B. It has been.

The vacuum window 305 enables transmission of high-frequency power from the first converter 303A and the second converter 303B while maintaining the vacuum state of the vacuum vessel 304.
As a material for forming the vacuum window 305, a material generally used as a vacuum window such as quartz glass can be used, and the material is not particularly limited.

[Fifth Embodiment]
Next, a fifth embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the film forming apparatus of the present embodiment is the same as that of the first embodiment, but the configuration relating to the exhaust unit and the gas supply unit is different from the first embodiment. Therefore, in this embodiment, only the structure regarding an exhaust part and a gas supply part is demonstrated using FIG. 12 and FIG. 13, and description of another component etc. is abbreviate | omitted.
FIG. 12 is a schematic diagram illustrating the configuration of the film forming apparatus according to this embodiment. FIG. 13 is a cross-sectional view illustrating the configuration in the process chamber of FIG.
In addition, the same code | symbol is attached | subjected to the component same as 1st Embodiment, and the description is abbreviate | omitted.

  As shown in FIG. 12, the film forming apparatus 401 includes a process chamber (discharge chamber) 402, a first converter 3A, a second converter 3B, a first coaxial line 4A, a power source 5, and a matching unit. 6, the second coaxial line 4 </ b> B, the phase adjuster 7, the coaxial short-circuit part 8, the exhaust part 409, and the gas supply part 410 are mainly provided.

As shown in FIG. 12 and FIG. 13, the process chamber 402 is a portion that performs processing using the plasma P on the substrate S disposed inside.
The process chamber 402 is a part formed of a conductive non-magnetic or weak magnetic material such as an aluminum material, and is formed in a so-called double ridge waveguide tube. On the other hand, since the inside of the process chamber 402 is controlled to a vacuum state of about 0.1 kPa to 10 kPa by controlling the exhaust amount by the exhaust unit 9, the process chamber 402 is located between the inside and outside of the process chamber 402. The structure can withstand the pressure difference.

  In the process chamber 402, as shown in FIG. 13, a pair of ridge electrodes 21, 421 and a vacuum vessel wall 402A are provided.

  The ridge electrode 421 constitutes a ridge portion in the process chamber 402 that is a double ridge waveguide, and is disposed to face the ridge electrode 21. Further, the ridge electrode 421 is formed with a plurality of through holes such as mesh or punching metal. The through hole may be provided on the entire surface of the ridge electrode 421, or may be formed at least in the vicinity of a region where a vacuum exhaust pipe 409B and a gas supply pipe 410B, which will be described later, are disposed, and is particularly limited. is not.

  In addition, it is desirable that the opening area of the through hole is sufficiently small with respect to the wavelength of the supplied high frequency power. By doing so, the electric field inside the process chamber 402 is not affected.

  On the other hand, the substrate S is disposed on the surface facing the ridge electrode 421 in the ridge electrode 21 formed in a flat plate shape. Further, a temperature adjusting unit 411 that adjusts the temperature and temperature distribution of the substrate S is provided on the outer surface of the ridge electrode 21.

The temperature adjusting unit 411 circulates a temperature-controlled heat medium inside or incorporates a temperature-controlled heater to control its own temperature, and has a generally uniform temperature as a whole. It has a function of making the temperature of the substrate S uniform to a predetermined temperature via the contacting ridge electrode 21.
The above-described heat medium is a non-conductive medium, and a highly heat conductive gas such as hydrogen or helium, a fluorine-based inert liquid, an inert oil, pure water, or the like can be used as the heat medium. In particular, the use of a fluorine-based inert liquid (for example, trade name: Galden, F05, etc.) is preferable because the pressure does not increase even in the range of 150 ° C. to 250 ° C. and control is easy.

  The temperature adjusting unit 411 may be provided only on the outer surface of the ridge electrode 21 or may be provided on the outer surfaces of the ridge electrode 21 and the ridge electrode 421, and is not particularly limited.

The vacuum vessel wall 402 </ b> A is a wall surface that forms a space communicating with the process chamber 402 between the ridge electrode 421 and has a structure that can withstand a pressure difference between the inside and the outside like the process chamber 402. It is.
As shown in FIG. 13, a vacuum exhaust pipe 409B of the exhaust unit 409 and a gas supply pipe 410B of the gas supply unit 410 are provided between the ridge electrode 421 and the vacuum vessel wall 402A.

  The suction hole of the vacuum exhaust pipe 409B and the ejection hole of the gas supply pipe 410B are provided at substantially uniform intervals in the direction along the ridge electrode 21 (H direction) and in the direction extending into the process chamber 402 (L direction). It is preferable for securing the film quality distribution of the film formation on the substrate S.

As shown in FIGS. 12 and 13, the exhaust unit 409 is configured to reduce the pressure to a vacuum state by exhausting gas from the inside of the process chamber 402, the first converter 3A, and the second converter 3B.
The exhaust unit 409 is mainly provided with a vacuum pump unit 409A and a vacuum exhaust pipe (exhaust unit) 409B.

The vacuum pump unit 409A is disposed at a position away from the process chamber 402 and the like, and reduces the pressure inside the process chamber 402, the first converter 3A, and the second converter 3B to a vacuum state via the vacuum exhaust pipe 409B. is there.
The vacuum exhaust pipe 409B is connected to the vacuum pump unit 409A and is disposed in a space between the vacuum vessel wall 402A and the ridge electrode 421. Further, the vacuum exhaust pipe 409B exhausts gas from the inside of the process chamber 402, the first converter 3A, and the second converter 3B through the through hole of the ridge electrode 421.

As shown in FIGS. 12 and 13, the gas supply unit 410 supplies a mother gas (for example, SiH ₄ gas) used for plasma generation between the pair of ridge electrodes 21 and 421.
The gas supply unit 410 is mainly provided with a gas supply source 410A and a gas supply pipe (supply unit) 410B.

The gas supply source 410A is disposed at a position away from the process chamber 402 and the like, and supplies a mother gas between the pair of ridge electrodes 21 and 421 via the gas supply pipe 410B.
The gas supply pipe 410B is connected to the gas supply source 410A and is disposed in a space between the vacuum vessel wall 402A and the ridge electrode 421. Further, the gas supply pipe 410 </ b> B supplies a mother gas between the pair of ridge electrodes 21 and 421 through the through hole of the ridge electrode 421.

Next, a film forming process that is a plasma process for the substrate S in the film forming apparatus 401 having the above-described configuration will be described.
When the substrate S is disposed in the process chamber 402 and a gas such as air is exhausted from the inside of the process chamber 402, high-frequency power is supplied from the power source 5 to the process chamber 402 as shown in FIG. A mother gas containing a source gas for forming a film on the surface of the substrate S, such as SiH ₄ gas, is supplied from the unit 410.
Further, the temperature adjustment unit 411 adjusts the temperature and temperature distribution of the substrate S.

  Specifically, when the vacuum pump unit 409A of the exhaust unit 409 is driven, gas is exhausted from the space between the vacuum vessel wall 402A and the ridge electrode 421 through the vacuum exhaust pipe 409B. At the same time, gas is exhausted from the inside of the process chamber 402, the first converter 3A, and the second converter 3B through the through-hole formed in the ridge electrode 421.

  On the other hand, the mother gas supplied from the gas supply source 410A is supplied to the space between the vacuum vessel wall 402A and the ridge electrode 421 through the gas supply pipe 410B. At the same time, the mother gas is supplied between the pair of ridge electrodes 21 and 421 through the through-hole formed in the ridge electrode 421.

When the process chamber 402 high frequency power is supplied from the power source 5 via the first converter 3A, the through hole of the ridge electrode 421 is sufficiently small with respect to the wavelength of the high frequency power. An electric field having a substantially uniform intensity distribution is formed in the direction along the ridge electrode (H direction).
Since the subsequent film forming process is the same as that of the first embodiment, the description thereof is omitted.

  According to the above configuration, since the installation positions of the temperature control unit 411, the gas supply pipe 410B, the vacuum exhaust pipe 409B, and the like are different from the installation positions of the first coaxial line 4A, the first converter 3A, and the like, they interfere. There is nothing. In other words, the installation of the temperature control unit 411, the gas supply pipe 410B, the vacuum exhaust pipe 409B, and the like is not restricted by the first coaxial line 4A, the first converter 3A, etc., so that a design with a high degree of freedom is possible. Become.

  Specifically, the temperature control unit 411 and the like are disposed adjacent to the ridge electrodes 21 and 421 in the process chamber 402, while the first converter 3A is disposed adjacent to the process chamber 402 in the L direction. The first coaxial line 4A extends from the first converter 3A in the E direction. Therefore, the temperature adjustment unit 411 and the first converter 3A and the like do not interfere with each other with respect to the arrangement position.

  Here, in the conventional plasma CVD apparatus, the mother gas is generally supplied from the periphery of the plasma discharge electrode or the periphery of the antenna electrode. Furthermore, the temperature control unit is generally incorporated in a counter electrode that holds the substrate facing the plasma discharge electrode and the antenna electrode. However, in this configuration, the configuration for supplying power to the plasma discharge electrode interferes with the configuration for supplying the mother gas and the temperature control unit, in other words, the configuration for supplying the mother gas and the temperature control unit are supplied with power. There was a restriction on the arrangement position depending on the configuration to be supplied.

  In the configuration of this embodiment, the high-frequency power is supplied to the ridge electrodes 21 and 421 that are plasma discharge electrodes by propagation of the high-frequency power in the first converter 3A that is a ridge waveguide and the process chamber 402. The On the other hand, since the temperature control unit 411 and the like are disposed outside the process chamber 402, the above-described interference problem does not occur, and a design with a high degree of freedom is possible.

In addition, although the whole structure of the film forming apparatus 401 was applied and demonstrated to the structure similar to the whole structure (refer FIG. 1) of the film forming apparatus 1 of 1st Embodiment here, as shown in FIG. Without being limited thereto, the present invention may be applied to a configuration similar to the overall configuration (see FIG. 7) of the film forming apparatus 101 of the second embodiment.
Even when applied to a configuration similar to the overall configuration of the film forming apparatus 101 of the second embodiment, the same effects as when applied to a configuration similar to the overall configuration of the film forming apparatus 1 of the first embodiment are obtained. I can.

[Sixth Embodiment]
Next, a sixth embodiment of the present invention will be described with reference to FIG.
The basic configuration of the film forming apparatus of the present embodiment is the same as that of the first embodiment, but the configuration relating to loading and unloading of the substrate is different from that of the first embodiment. Therefore, in the present embodiment, only the configuration relating to the loading and unloading of the substrate will be described using FIG. 14, and the description of the other components and the like will be omitted.
FIG. 14 is a schematic diagram illustrating the configuration of the film forming apparatus according to the present embodiment.
In addition, the same code | symbol is attached | subjected to the component same as 1st Embodiment, and the description is abbreviate | omitted.

As shown in FIG. 14, the process chamber (discharge chamber) 502 of the film forming apparatus 501 is a portion that performs processing using plasma P on the substrate S arranged inside.
The process chamber 502 is a part formed of a conductive non-magnetic or weak magnetic material such as an aluminum material, and is formed in a so-called double ridge waveguide tube. On the other hand, since the inside of the process chamber 402 is brought into a vacuum state of about 0.1 kPa to 10 kPa by the exhaust unit 9, the process chamber 502 has a structure that can withstand a pressure difference between the inside and the outside. .

  Further, a pair of slits (openings) through which the substrate S is carried into or out of the process chamber 502 is formed on a wall surface of the process chamber 502 that intersects the direction (H direction) in which the substrate S extends. Part) 503 and 503 are provided.

  The pair of slits 503 and 503 are through holes formed in a substantially rectangular shape on the wall surface of the process chamber 502, and are preferably holes through which the substrate S is loaded or unloaded. Further, the pair of slits 503 are formed at positions that do not affect the electric field formed between the pair of ridge electrodes 21, 21, that is, at the side walls of the process chamber 502.

  Further, as shown in FIG. 14, a load chamber 520 is provided adjacent to the side where the substrate S in the process chamber 502 is rich (the left side in FIG. 14), and the substrate S is unloaded in the process chamber 502. An unload chamber 521 is provided adjacent to (on the right side of FIG. 14).

  The load chamber 520 is provided with a gate valve 530, and the unload chamber 521 is provided with a gate valve 531. A vacuum exhaust device and a vent device (not shown) are connected to the load chamber 520 and the unload chamber 521. The inside of the load chamber 520 and the unload chamber 521 can be brought into a vacuum state and an atmospheric pressure state by the vacuum exhaust device and the vent device.

In the present embodiment, a substrate S similar to that in the first embodiment or a substrate S formed longer than the ridge electrode 21 can be used.
Further, as the material of the substrate S, in addition to the translucent glass substrate, a flexible material that can be wound can be used. In this case, a film forming process by continuous substrate supply represented by a roll-to-roll method can be performed using the film forming apparatus 501 of the present embodiment.

Next, a film forming process that is a plasma process for the substrate S in the film forming apparatus 501 having the above-described configuration will be described.
First, as shown in FIG. 14, the load chamber 520 is set to the atmospheric pressure state, the gate valve 530 is opened, and the substrate S is loaded by a substrate transfer device (rotating roller or the like) (not shown). Thereafter, the gate valve 530 is closed and evacuated to bring the load chamber 520 into a vacuum state.

The inside of the process chamber 502 is maintained in a vacuum state, the slit 503 on the load chamber 520 side is opened, and the substrate S is carried in between the pair of ridge electrodes 21 and 21 from the slit 503. As shown in FIG. 14, high-frequency power is supplied to the process chamber 502, and a mother gas such as SiH ₄ gas is supplied between the pair of ridge electrodes 21 and 21.

Then, plasma P is formed between the pair of ridge electrodes 21, 21, and a film forming process that is a plasma process is performed on the substrate S.
At this time, the substrate S is carried into the process chamber 502 from one slit 503, and the substrate S on which the film forming process has been performed opens the other slit 503 and is adjacent to the process chamber 502. It is carried out to the load chamber 521. When the substrate S is carried out to the unload chamber 521, the other slit 503 is closed and the unload chamber 521 is vented to an atmospheric pressure state. Then, the gate valve 531 is opened, and the substrate S for which the plasma processing is completed is carried out from the unload chamber 521.
By doing in this way, the board | substrate S can be successively conveyed to the process chamber 502, and the film forming process with respect to the board | substrate S can be performed continuously.

  Furthermore, even if the substrate S is longer than the ridge electrode 21, it is possible to perform the film forming process on the substrate S by opening the slit 503 while the substrate S is transported to the process chamber 502. That is, since the substrate S can be formed on the substrate S while being transported between the ridge electrodes 21, 21, the film can be formed on a larger area substrate.

  According to the configuration described above, the substrate S is carried into the process chamber 502 from one of the pair of slits 503 and 503 and guided between the pair of ridge electrodes 21 and 21. Between the ridge electrodes 21 and 21, the substrate S is subjected to plasma processing such as plasma CVD. The substrate S subjected to the plasma treatment is carried out of the process chamber 502 from the other of the pair of slits 503 and 503. Therefore, the film forming process for the substrate S can be performed continuously.

  Further, since the substrate S can be carried in, the plasma processing to the substrate S, and the substrate S can be carried out continuously, the plasma is continuously applied to the substrate S having a larger area than the pair of ridge electrodes 21 and 21. Processing can be performed. Therefore, productivity improvement of an amorphous silicon solar cell, a crystalline silicon solar cell, etc. can be aimed at.

  Further, a plurality of process chambers 502 may be arranged in the moving direction of the substrate S so that one substrate S is continuously loaded into the plurality of process chambers 502. In this case, by performing different plasma treatments in each discharge chamber, p-layers such as amorphous silicon solar cells and crystalline silicon solar cells, i-layers, and n-layers, respectively, p-layers on the substrate S, Each film-forming process of i layer and n layer can be performed continuously.

[Seventh Embodiment]
Next, a seventh embodiment of the present invention will be described with reference to FIG.
The basic configuration of the film forming apparatus of this embodiment is the same as that of the fifth embodiment, but is different from the fifth embodiment in that a plurality of process chambers are provided. Therefore, in the present embodiment, only the point where a plurality of process chambers are provided will be described with reference to FIG. 15, and description of other components will be omitted.
FIG. 15 is a schematic diagram illustrating the configuration of the film forming apparatus according to the present embodiment.
In addition, the same code | symbol is attached | subjected to the component same as 5th Embodiment, and the description is abbreviate | omitted.

  As shown in FIG. 15, the film forming apparatus 601 mainly includes a process chamber 402p, a process chamber 402i, a process chamber 402n, and a substrate transfer unit (transfer unit) 602.

  As shown in FIG. 15, the process chamber 402p, the process chamber 402i, and the process chamber 402n are portions that perform processing using plasma P on the substrate S arranged inside. Specifically, the process chamber 402p forms a p-layer such as an amorphous or crystalline silicon solar cell on the substrate S, and the process chamber 402i has an amorphous or crystalline silicon solar cell on the substrate S. The i layer of a battery or the like is formed, and the process chamber 402n forms the n layer on the substrate S.

On the other hand, the process chamber 402p, the process chamber 402i, and the process chamber 402n are arranged in order in the E direction, and the substrate transfer unit 602 is adjacently arranged in the H direction.
Furthermore, a gate valve 603 is provided in a position adjacent to the substrate transfer unit 602 in each of the process chamber 402p, the process chamber 402i, and the process chamber 402n.

  The gate valve 603 opens and closes an opening formed in the process chamber 402p and the like. Through the opening formed by opening the gate valve 603, the substrate S is carried in and out between the process chamber 402p and the like and the substrate transport unit 602.

  The substrate transfer unit 602 carries the substrate S into and out of the process chamber 402p and the like, and exchanges the substrate S between the process chamber 402p, the process chamber 402i, and the process chamber 402n.

The substrate transfer unit 602 is kept in a vacuum state by a vacuum exhaust device (not shown) at least when the gate valve 603 is opened and closed. For this reason, the inside of the process chamber 402p, the process chamber 402i, and the process chamber 402n can always be maintained in a vacuum state, and the occurrence of gas contamination due to cross leakage between the process chambers can be suppressed.
Note that a known configuration can be used as the configuration of the substrate transport unit 602 and is not particularly limited.

Next, a film forming process that is a plasma process for the substrate S in the film forming apparatus 601 having the above-described configuration will be described. Here, description will be made by applying to the case where film formation is performed on the substrate S in the order of the p layer, the i layer, and the n layer.
The film forming process in the process chamber 402p and the like is the same as that in the fifth embodiment, and thus the description thereof is omitted.

  The substrate S is carried into the process chamber 402p from the substrate transfer unit 602. At this time, the gate valve 603 of the process chamber 402p is opened. When the substrate S is loaded into the process chamber 402p, the gate valve 603 is closed, and a p-layer film forming process is performed on the substrate S.

  When the p-layer film forming process on the substrate S is completed, the gate valve 603 is opened, and the substrate S is carried out from the process chamber 402p to the substrate transfer unit 602. The unloaded substrate S is then loaded into the process chamber 402i. At this time, the gate valve 603 of the process chamber 402i is opened. When the substrate S is carried into the process chamber 402i, the gate valve 603 is closed, and the i layer is formed on the p layer of the substrate S.

When the film formation process for the i layer on the substrate S is completed, the gate valve 603 is opened, and the substrate S is carried out from the process chamber 402 i to the substrate transfer unit 602. The unloaded substrate S is then loaded into the process chamber 402n. At this time, the gate valve 603 of the process chamber 402n is opened. When the substrate S is carried into the process chamber 402n, the gate valve 603 is closed, and an n layer is formed on the i layer of the substrate S.
Thereby, the p layer, the i layer, and the n layer are formed on the substrate S in this order.

  According to the above configuration, the process chamber 402p, the process chamber 402i, and the process chamber 402n are arranged side by side in the E direction, so that the space for installing the process chamber 402p and the like can be saved. Therefore, productivity per unit area in a factory equipped with the film forming apparatus 601 can be improved.

In general, the aspect ratio of the ridge waveguide in the transmission direction is defined as 1: 2 in the EIAJ standard, 1: 4 in the WMI standard, and 1: 8.33 in the WFI standard. In any standard, the ridge waveguide has a horizontally long shape. Therefore, if many ridge waveguides are placed flat, a large installation space is required.
However, the problem of installation space can be solved by arranging the process chamber 402p, the process chamber 402i, and the process chamber 402n side by side in the E direction.

[Eighth Embodiment]
Next, an eighth embodiment of the present invention will be described with reference to FIGS.
The basic configuration of the film forming apparatus of this embodiment is the same as that of the first embodiment, but the configuration of the second converter is different from that of the first embodiment. Therefore, in the present embodiment, only the peripheral configuration of the second converter will be described with reference to FIGS. 16 and 17, and description of other components and the like will be omitted.
FIG. 16 is a schematic diagram illustrating the configuration of the film forming apparatus according to the present embodiment.
In addition, the same code | symbol is attached | subjected to the component same as 1st Embodiment, and the description is abbreviate | omitted.

  As shown in FIG. 16, the film forming apparatus (vacuum processing apparatus) 701 includes a process chamber 2, a converter (converter) 703 </ b> A, a taper tube 704, a terminal adjuster (phase adjuster) 705, One coaxial line 4 </ b> A, a power source 5, a matching unit 6, an exhaust unit 9, and a gas supply unit 10 are mainly provided.

  The converter 703A converts the transmission path of the high frequency power from the first coaxial line 4A to the waveguide. Further, the converter 703A is formed in a cylindrical shape and one end (the left end in FIG. 16) is closed.

As shown in FIG. 16, a first coaxial line 4A and a tapered tube 704 are connected to the converter 703A.
Specifically, the first coaxial line 4A is electrically connected to the side surface of the converter 703A and is disposed so as to protrude into the converter 703A. On the other hand, the taper tube 704 is electrically connected to the other end (right end) of the converter 703A.

A vacuum window 706 is provided between the converter 703A and the tapered tube 704.
The vacuum window 706 maintains a vacuum state inside the tapered tube 704 and the process chamber 2 and enables transmission of high-frequency power from the converter 703A to the tapered tube 704 and the process chamber 2.
As a material for forming the vacuum window 706, quartz glass or the like can be exemplified.

The tapered tube 704 converts the waveguide mode to the parallel plate mode.
The end of the taper tube 704 connected to the converter 703A is formed in the same cross-sectional shape as the converter 703A, and the end connected to the process chamber 2 is the same double ridge waveguide as that of the process chamber 2. It is formed in a cross-sectional shape. Further, the cross-sectional shape of the taper tube 704 smoothly changes from the end connected to the converter 703 </ b> A toward the end connected to the process chamber 2.

  The termination adjuster 705 adjusts the phase of the reflected power reflected toward the process chamber 2. The end adjuster 705 is disposed at a position sandwiching the process chamber 2 together with the tapered tube 704, and is electrically connected to the process chamber 2. Further, the end adjuster 705 is formed in the same cross-sectional shape as the process chamber 2.

FIG. 17 is a schematic diagram for explaining a state in which the end plate of FIG. 16 moves.
The termination adjuster 705 is provided with a termination plate 705A as shown in FIG.
Termination plate 705A is a portion where high frequency power is reflected by termination adjuster 705, and is a plate-like member formed of a conductor such as metal. Furthermore, as shown in FIG. 17, the end plate 705A is movable in the L direction.

Next, a film forming process that is a plasma process for the substrate S in the film forming apparatus 701 having the above-described configuration will be described.
As shown in FIG. 16, the substrate S is disposed on the ridge electrode 21 in the process chamber 2. Here, the process chamber 2, the tapered tube 704, and the termination adjuster 705 are always in a vacuum state in which a gas such as air is exhausted from the inside by the exhaust unit 9. Therefore, it is preferable that a load chamber or the like is provided side by side as in the film forming apparatus 501 according to the sixth embodiment and the film forming apparatus 601 according to the seventh embodiment.

Further, high frequency power having a frequency of 13.56 MHz or more, preferably 30 MHz to 400 MHz, is supplied from the power source 5 to the ridge electrode 21 of the process chamber 2, and between the gas supply unit 10 and the pair of ridge electrodes 21, 21, For example, a mother gas such as SiH ₄ gas is supplied.
At this time, a vacuum state of about 0.1 kPa to 10 kPa is maintained inside the process chamber 2 or the like, in other words, between the pair of ridge electrodes 21 and 21.

The high frequency power supplied from the power source 5 is transmitted to the converter 703A via the matching unit 6 by the first coaxial line 4A. The matching unit 6 adjusts values such as impedance in a system that transmits high-frequency power.
The high-frequency power is transmitted from the converter 703A to the tapered tube 704, and the transmission mode is converted from the waveguide mode to the parallel plate mode in the tapered tube 704.

  Thereafter, the high frequency power is transmitted from the tapered tube 704 to the process chamber 2, and an electric field is formed between the pair of ridge electrodes 21 and 21.

  On the other hand, a part of the high frequency power transmitted to the process chamber 2 is reflected by the termination plate 705A of the termination adjuster 705. A standing wave SW is formed in the process chamber 2 by the input power supplied from the power source 5 and the reflected reflected power. When the position (phase) of the standing wave is fixed, the distribution of the electric field intensity in the L direction that is the direction in which the process chamber 2 extends in the pair of ridge electrodes 21 and 21 is biased.

  Therefore, the position of the standing wave SW formed in the process chamber 2 is adjusted by adjusting the phase of the reflected power by the termination adjuster 705. As a result, the electric field distribution in the L direction in the pair of ridge electrodes 21, 21, in other words, the potential distribution EP is made uniform over time.

  Specifically, as shown in FIG. 17, the phase of the reflected power is obtained by moving the arrangement position of the end plate 705 </ b> A in the L direction in a sine wave shape, a triangular wave shape, or a staircase (step) shape as time passes. Is adjusted. As a result, the position of the standing wave SW is also adjusted, and the distribution of the potential distribution EP in the L direction is made uniform on a time average basis.

  The range in which the standing wave moves, the method of moving the standing wave (Sin wave shape, triangular wave shape, stepped shape, etc.) and the optimization of the phase adjustment period are the distribution of power, the distribution of light emission from the plasma, This is performed based on the distribution of plasma density, the distribution of characteristics related to the formed film, and the like. Examples of characteristics relating to the film include film thickness, film quality, and characteristics as a semiconductor such as a solar cell.

  In such a state, the mother gas is ionized between the pair of ridge electrodes 21 and 21, and plasma is formed. A uniform film such as an amorphous silicon film or a crystalline silicon film is formed on the substrate S by the formed plasma.

  According to the above configuration, the phase of the standing wave SW in the process chamber 2 is also adjusted by adjusting the phase of the reflected power by the termination adjuster 705. In the present embodiment, the phase of the standing wave SW in the process chamber 2 is also temporally changed by changing the phase of the reflected power temporally. As a result, the electric field between the pair of ridge electrodes 21 and 21 can be uniformed on a time average basis.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, the present invention has been described by applying the present invention to a film forming apparatus using the plasma CVD method. However, the present invention is not limited to the film forming apparatus, and an apparatus for performing plasma processing such as plasma etching. It can be applied to various other devices.

1,101,201,301,401,501,601,701 Film forming apparatus (vacuum processing apparatus)
2,302,402,502 Process chamber (discharge chamber)
3A, 203A, 303A First converter (conversion unit)
3B, 203B, 303B Second converter (conversion unit)
4A 1st coaxial line (coaxial line)
5 Power supply 7 Phase adjuster (Phase adjuster)
21, 421 Ridge electrode 31 Ridge portion 41 Inner conductor 42 Outer conductor 104A First coaxial line (one coaxial line)
105A First power supply (one power supply)
104B Second coaxial line (other coaxial lines)
105B Second power supply (other power supply)
304 Vacuum container (depressurized container)
305 Vacuum window (window)
409 Exhaust part 411 Temperature control part 409B Vacuum exhaust pipe (exhaust part)
410B Gas supply pipe (supply part)
503 A pair of slits (openings)
602 Substrate transfer unit (transfer unit)
703A converter (converter)
705 Termination adjuster (phase adjuster)
S substrate

Claims (10)

A discharge chamber composed of a ridge waveguide having a ridge electrode which is a discharge ridge portion disposed opposite to each other and on which a substrate subjected to plasma treatment is disposed;
A power supply for supplying high frequency power to the discharge chamber;
A coaxial line composed of an inner conductor and an outer conductor, guiding the high-frequency power from the power source to the discharge chamber;
A ridge waveguide having a ridge portion, arranged adjacent to the direction in which the discharge chamber extends, and a conversion portion for guiding the high-frequency power from the coaxial line to the discharge chamber;
Is provided,
One of the ridge portions is electrically connected to the inner conductor, and the other of the ridge portions is electrically connected to the outer conductor. The converter is provided at one end and the other end in the direction in which the discharge chamber extends,
The coaxial line electrically connected to the power source is electrically connected to the converter provided at the one end,
The phase conversion unit that adjusts the phase of reflected power reflected from the conversion unit toward the discharge chamber is provided in the conversion unit provided at the other end. The vacuum processing apparatus as described. The converter is provided at one end and the other end in the direction in which the discharge chamber extends,
One power source and one coaxial line are electrically connected to the converter provided at the one end,
The vacuum processing apparatus according to claim 1, wherein another power source and another coaxial line are electrically connected to the converter provided at the other end.   The vacuum processing apparatus according to claim 3, wherein at least one of the one power source and the other power source is capable of adjusting a phase of high-frequency power supplied. The conversion line provided at one end in the direction in which the discharge chamber extends is electrically connected to the coaxial line electrically connected to the power source,
The vacuum processing apparatus according to claim 1, wherein a phase adjusting unit that adjusts a phase of reflected power reflected toward the discharge chamber is provided at the other end in a direction in which the discharge chamber extends. . A filler is provided between at least the ridge portion in the conversion portion electrically connected to the power source via the coaxial line,
The vacuum processing apparatus according to claim 2, wherein the filler has a higher dielectric constant than a region where the filler is not provided.   The vacuum processing apparatus according to claim 1, wherein at least the discharge chamber is disposed inside a decompression vessel. A pair of the ridge electrodes are arranged to face each other,
The substrate is disposed on an inner surface of one of the pair of ridge electrodes, and a temperature adjusting unit that adjusts the temperature of the substrate is provided on the outer surface of one of the ridge electrodes,
On the outer surface of the other of the pair of ridge electrodes, an exhaust part that exhausts the gas in the discharge chamber through at least a part of the other of the ridge electrode along the other of the ridge electrode, and plasma The vacuum processing apparatus according to claim 1, further comprising a supply unit configured to supply a gas used for generation. The substrate is movable between the ridge electrodes in a direction intersecting a direction in which the discharge chamber extends;
The vacuum processing apparatus according to claim 8, wherein a pair of openings through which the substrate enters and exits the discharge chamber is provided in a region in the discharge chamber where the substrate moves. A plurality of the discharge chambers are provided;
The vacuum according to claim 8, further comprising a transfer unit that carries the substrate into and out of the discharge chamber and transfers the substrate from one discharge chamber to another discharge chamber. Processing equipment.

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