JP5721362B2 - Vacuum processing apparatus and plasma processing method - Google Patents

Description

  The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus and a plasma processing method for processing a substrate using plasma.

  Generally, in order to improve the productivity of a thin film solar cell, it is important to form a high-quality silicon thin film at a high speed and in a large area. As a method for performing such high-speed and large-area film formation, a film formation method by plasma CVD (chemical vapor deposition) is known.

  In order to perform film formation by the plasma CVD method, a plasma generation apparatus (vacuum processing apparatus) that generates plasma is necessary. As a plasma generation apparatus that generates plasma efficiently, for example, a ridge disclosed in Patent Document 1 A plasma generating apparatus using a waveguide is known. As shown in FIG. 10 of the document 1, this type of plasma generation apparatus includes a pair of left and right converters (distribution chambers) that convert a high-frequency power source (RF power source) into a strong electric field, and these converters. A discharge chamber (effective space) to be connected is provided.

  A pair of upper and lower planar ridge electrodes facing each other are provided inside the discharge chamber, and plasma is generated therebetween. Therefore, when a film forming process is performed on a glass substrate or the like, it is conceivable to perform the film forming process by installing a substrate between such ridge electrodes. Specifically, the entire apparatus is installed so that the upper and lower ridge electrodes are horizontal, a substrate is loaded between the upper and lower electrodes, and this substrate is placed on the upper surface of the lower ridge electrode. Then, when the inside of the discharge chamber is brought close to a vacuum state, and at the same time, a gas as a film forming material is supplied to generate plasma between the ridge electrodes, a film or the like is formed on the substrate.

Japanese National Patent Publication No. 4-504640

  Such a plasma generation apparatus using a ridge waveguide has a structure in which microwave power is supplied from the lateral direction to the ridge waveguide. That is, the electric field intensity distribution in the longitudinal direction along the ridge waveguide is a part of the ridge waveguide called a distribution chamber and a coupling hole for supplying microwaves from the distribution chamber to the ridge waveguide. It depends on the configuration. For this reason, the ridge waveguide and the distribution chamber must have the same length, and if the possible arrangements in the distribution chamber and the coupling hole are limited, the uniformity of the electric field strength distribution is also limited, so that the plasma is uniformized. There is a problem that it becomes difficult (see Patent Document 1).

Furthermore, in a plasma generator using a ridge waveguide, when a film is formed on the substrate, the lower ridge electrode on which the substrate is placed is preheated in order to adjust the film forming conditions for obtaining the required film quality. There is a need to. When plasma is generated, the upper and lower ridge electrodes are heated by the plasma energy. For this reason, a temperature difference occurs between the front and back surfaces of the substrate due to the heat flux generated in the thickness direction of the substrate, and the ridge electrode and the substrate are liable to undergo thermal deformation such as warpage. If either one of the ridge electrode and the substrate is thermally deformed, the distance between the ridge electrodes and the distance between the ridge electrode and the substrate become uneven, and uniform plasma characteristics cannot be obtained. The film forming process cannot be performed. Because of this problem, it is difficult to perform film forming processing by the plasma CVD method particularly for large substrates having an area of 1 m ² or more, and even 2 m ² class. A solution was desired.

  The present invention has been made to solve the above-described problems, and is a vacuum processing apparatus for generating plasma between ridge electrodes using a ridge waveguide to perform plasma processing on a substrate. An object of the present invention is to provide a vacuum processing apparatus and a plasma processing method capable of suppressing thermal deformation of the substrate and performing stable plasma processing even on a large substrate.

In order to achieve the above object, the present invention provides the following means.
That is, the vacuum processing apparatus according to the present invention is formed in a flat plate shape and disposed opposite to each other in parallel, and a discharge chamber comprising a ridge waveguide having one and other ridge electrodes between which plasma is generated, disposed adjacent to both ends of the discharge chamber, of a non-ridge portion waveguide having a pair of ridge portions which are parallel to face each other, the fundamental transmission mode of the radio-frequency power supplied from the high frequency power source the rectangular waveguide A pair of converters for generating a plasma between the one and the other ridge electrode, and being arranged in parallel with an interval on the outer surface side of the other ridge electrode, A substrate to be subjected to plasma treatment is set, a soaking temperature controller that controls the temperature of the substrate, and a heat absorption temperature that is installed on the outer surface side of the one ridge electrode and controls the temperature of the one ridge electrode. Tone , Exhaust means for exhausting the gas inside the discharge chamber and the converter, and a mother gas for supplying a mother gas necessary for performing plasma treatment to the substrate between the one and the other ridge electrodes And a supply means.

  According to the above configuration, the heat flux passing through the thickness direction of the substrate is controlled by controlling the temperature of the one and the other ridge electrodes by the heat absorption temperature adjusting unit and the soaking temperature controller. Deformation (warping) due to the temperature difference between the front and back surfaces can be suppressed, and uniform and high-quality plasma treatment can be performed. Therefore, when this vacuum treatment apparatus is applied as a film forming apparatus for performing a plasma film forming process on a substrate, a high quality and uniform film forming process can be performed.

  Further, in the vacuum processing apparatus according to the present invention, the heat absorption temperature control unit has a flat part facing the one ridge electrode, and the one ridge electrode is held in close contact with the flat part. It is characterized by that. According to this configuration, one of the ridge electrodes is surely prevented from being deformed (warped) by the heat flux passing therethrough to ensure uniform plasma characteristics and perform high-quality and uniform plasma processing. Can do.

  The vacuum processing apparatus according to the present invention is characterized in that the one and the other ridge electrodes are metal plates having a thickness of 0.5 mm or more and 3 mm or less. By thinly forming the ridge electrode in this way, the heat flux passing through the ridge electrode does not cause a temperature difference between the front and back, which deforms the ridge electrode to the extent that it affects the plasma distribution. High quality plasma processing can be performed while ensuring uniform plasma characteristics.

  The vacuum processing apparatus according to the present invention further includes a ridge electrode facing distance adjusting unit that distributes the weight of the other ridge electrode and supports the ridge electrode in parallel and flat with respect to the one ridge electrode. . With this configuration, the flatness of the other ridge electrode can be increased, uniform plasma characteristics in the discharge chamber can be ensured, and high-quality plasma treatment can be performed.

  The vacuum processing apparatus according to the present invention is characterized in that the ridge electrode facing distance adjusting means is configured to suspend the other ridge electrode from above via a plurality of suspension members. . According to this configuration, since the other ridge electrode is suspended flat by the heat absorption temperature control unit, the flatness of the other ridge electrode is increased to ensure uniform plasma characteristics in the discharge chamber, and high quality. Plasma treatment can be performed.

Further, in the vacuum processing apparatus according to the present invention, the ridge electrode facing distance adjusting means may change the one ridge electrode and the other ridge electrode without changing the cross-sectional shape of the non-ridge waveguide of the discharge chamber. The distance between the ridge electrodes can be adjusted in a state where the distance between them is kept parallel. According to this configuration, the interval between the ridge electrodes can be set to an optimum value without changing the transmission characteristics of the non-ridge portion waveguide, whereby high-quality plasma processing can be performed.

  The vacuum processing apparatus according to the present invention further includes thermal expansion absorption means for absorbing thermal expansion of the one and the other ridge electrodes. Accordingly, it is possible to reliably prevent the one and the other ridge electrodes from being deformed (warped) due to thermal expansion, to ensure uniform plasma characteristics, and to perform high quality and uniform plasma processing.

  Further, in the vacuum processing apparatus according to the present invention, the thermal expansion absorbing means is provided on the one and the other ridge electrodes, and a fastening member insertion hole for fastening and holding the ridge electrodes to the electrode holding portion, A fastening member that is inserted into the fastening member insertion hole, and the fastening member insertion hole has a long hole shape extending in a direction of thermal expansion of the ridge electrode with respect to the electrode holding portion, and a fastening force of the fastening member Is characterized in that the strength is set to allow the relative movement between the ridge electrode and the electrode holding portion when the ridge electrode is thermally expanded.

  According to the above configuration, the position of the fastening member insertion hole of the ridge electrode can be moved relative to the electrode holding portion even when one and the other ridge electrodes are thermally expanded to extend in the surface direction. The heat flux passing through the electrodes ensures that each ridge electrode is prevented from warping and other deformations, so that one and the other ridge electrodes are kept parallel to generate a uniform plasma, resulting in high-quality plasma processing. It can be performed.

  Further, in the vacuum processing apparatus according to the present invention, the one and the other ridge electrodes are provided with a plurality of vent holes, and the heat absorption temperature control unit communicates with the discharge chamber through the vent holes. And a temperature adjustment medium flow passage through which the temperature adjustment medium flows, and the exhaust means is connected to a header portion of the heat absorption temperature adjustment unit, The gas inside the discharge chamber and the converter is discharged through the manifold shape of the absorption temperature control unit.

  According to the above configuration, the manifold shape of the heat absorption temperature control unit allows the inside of the discharge chamber to be exhausted from a wide range of one ridge electrode surface of the discharge chamber, so that the distribution of the mother gas in the inside of the discharge chamber is made uniform. This stabilizes the plasma and enables high-quality plasma treatment.

  Further, in the vacuum processing apparatus according to the present invention, the aperture ratio of the vent per unit area in the one and the other ridge electrodes is compared with a position range close to the mother gas supply unit with respect to the exhaust unit, The position range far from the mother gas supply means is higher. Thereby, it is possible to perform stable plasma processing by evenly distributing the mother gas to the vicinity of the center in the discharge chamber.

  Further, in the vacuum processing apparatus according to the present invention, the mother gas supply means is accommodated in a non-ridge portion waveguide of the discharge chamber, and is disposed along the longitudinal direction of the inside of the waveguide. It is characterized by comprising a mother gas supply pipe and a plurality of mother gas ejection holes through which the mother gas is ejected from the mother gas supply pipe between the one and the other ridge electrodes. According to this configuration, the internal space of the non-ridge waveguide is effectively used to make the vacuum processing apparatus compact, and the mother gas is uniformly discharged from the non-ridge waveguide at both ends of the discharge chamber. The plasma can be made uniform by spreading to the inside of the room, and high-quality and stable plasma treatment can be performed.

  In the vacuum processing apparatus according to the present invention, the mother gas supply means is accommodated in the heat absorption temperature control unit, and the mother gas supply means is installed in the mother of the heat absorption temperature adjustment unit. A gas distribution section, and a plurality of mother gas ejection holes for ejecting a mother gas from the mother gas distribution section through the heat absorption temperature control unit and between the one and the other ridge electrodes. Features.

  According to this configuration, since the mother gas can be supplied into the discharge chamber from the heat absorption temperature control unit having a plane area substantially the same as the plane area of the one ridge electrode, the mother gas can be supplied uniformly. Plasma can be made uniform and high-quality plasma treatment can be performed.

  Further, in the vacuum processing apparatus according to the present invention, the mother gas ejection hole is provided with mother gas introduction guide means for supplying the ejected mother gas to the space between the pair of ridge electrodes without early diffusion. It is characterized by that. Thereby, the mother gas is evenly distributed between the one and the other ridge electrodes to make the plasma uniform, and high-quality and stable plasma treatment can be performed.

  Moreover, the vacuum processing apparatus according to the present invention is characterized in that the exhaust means is connected to at least one location of the non-ridge waveguide of the discharge chamber. Accordingly, exhaust can be performed while balancing from both ends in the width direction of the discharge chamber, so that the mother gas is less likely to stagnate inside the discharge chamber, and the distribution of the mother gas can be made uniform and high-quality plasma treatment can be performed.

  The plasma processing method according to the present invention is characterized in that the substrate is subjected to plasma processing using the vacuum processing apparatus in each of the above aspects. Thereby, high quality plasma processing can be performed.

  As described above, according to the vacuum processing apparatus and the plasma processing method of the present invention, the plasma is generated in the discharge chamber using the ridge waveguide having the ridge electrodes, and the substrate placed outside the ridge electrodes is applied to the substrate. In a vacuum processing apparatus that performs plasma processing, thermal deformation of a ridge electrode and a substrate is suppressed, uniform plasma is generated between the ridge electrodes, and stable and high-quality plasma processing can be performed even on a large substrate.

It is a typical perspective view explaining schematic structure of the double ridge type film forming apparatus which concerns on embodiment of this invention. It is a typical disassembled perspective view explaining the detailed schematic structure in the discharge chamber vicinity of a film forming apparatus similarly. It is a longitudinal cross-sectional view which shows the film forming apparatus which concerns on 1st Embodiment of this invention by the III-III arrow cross section of FIG. It is an exploded perspective view around the discharge chamber of the film forming apparatus in the first embodiment of the present invention. It is a perspective view which shows a ridge electrode and a mother gas supply means. (A) shows an upper ridge electrode, and (b) is a plan view showing a lower ridge electrode. (A) is a cross-sectional view of the heat absorption temperature control unit alone, and (b) is a plan view showing a state in which the upper ridge electrode is superimposed on the heat absorption temperature control unit. It is a longitudinal cross-sectional view which shows the film forming apparatus which concerns on 2nd Embodiment of this invention. It is a disassembled perspective view around the discharge chamber and the ridge electrode facing distance adjusting mechanism of the film forming apparatus in the second embodiment of the present invention. It is a longitudinal cross-sectional view which shows the film forming apparatus which concerns on 3rd Embodiment of this invention. It is a disassembled perspective view around the discharge chamber and the ridge electrode facing distance adjusting mechanism of the film forming apparatus in the third embodiment of the present invention. It is a longitudinal cross-sectional view which shows the film forming apparatus which concerns on 4th Embodiment of this invention. FIG. 10 is an exploded perspective view around a discharge chamber, a ridge electrode facing distance adjustment mechanism, and a mother gas distribution part of a film forming apparatus in a fourth embodiment of the present invention. It is a longitudinal cross-sectional view which shows the film forming apparatus which concerns on 5th Embodiment of this invention. (A), (b) is a perspective view which shows the structural example of the mother gas supply means of the film forming apparatus in 5th Embodiment of this invention.

  Hereinafter, each embodiment of the present invention will be described with reference to FIGS. In this embodiment, the present invention is applied to a crystalline silicon such as amorphous silicon, microcrystalline silicon, etc. used for an amorphous solar cell, a microcrystalline solar cell, etc. with respect to a large-area substrate S having a side exceeding 1 m. A case where the film forming process of a film made of silicon nitride or the like is applied to a double ridge type film forming apparatus (vacuum processing apparatus) capable of performing the plasma CVD method will be described.

[First Embodiment]
First, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic perspective view illustrating a schematic configuration of a film forming apparatus 1 according to the first embodiment of the present invention. FIG. 2 is a more detailed and schematic view particularly in the vicinity of a discharge chamber of the film forming apparatus 1. It is a disassembled perspective view. FIG. 3 is a longitudinal sectional view showing the film forming apparatus according to the first embodiment of the present invention by a cross section taken along line III-III in FIG.

  The film forming apparatus 1 includes a discharge chamber (process chamber) 2, converters 3A and 3B disposed adjacent to both ends of the discharge chamber 2, and a power source having one end connected to the converters 3A and 3B. Coaxial cables 4A and 4B as lines, high-frequency power supplies 5A and 5B connected to the other ends of these coaxial cables 4A and 4B, matching units 6A and 6B connected to the middle part of the coaxial cables 4A and 4B, and a circulator 7A and 7B, an exhaust means 9 connected to the discharge chamber 2, and a mother gas supply means 10 containing a material gas are provided as main components. A known vacuum pump or the like can be used as the exhaust means 9 and is not particularly limited in the present invention. The circulators 7A and 7B guide the high-frequency power supplied from the high-frequency power sources 5A and 5B to the discharge chamber (process chamber) 2, respectively, and that high-frequency power having a different traveling direction is input to the high-frequency power sources 5A and 5B. It is to prevent.

  In this case, the high frequency power supplies 5A and 5B have a frequency of 13.56 MHz or more, preferably 30 MHz to 400 MHz (VHF band to UHF band). This is because when the frequency is lower than 13.56 MHz, the size of the double ridge waveguide (the ridge electrode 21 and the non-ridge portion waveguide 22 described later) becomes larger than the substrate size, so that the installation space for the device increases. However, if the frequency is higher than 400 MHz, the influence of standing waves generated in the direction (L direction) in which the discharge chamber (process chamber) 2 extends increases. The exhaust means 9 and the mother gas supply means 10 described above are shown in FIG.

  In FIGS. 1, 2 and 3, the film forming apparatus 1 is housed in a vacuum container (not shown). A vacuum vessel (not shown) has a structure that can withstand a pressure difference. For example, the structure formed from stainless steel (SUS material in JIS standard), the rolling material for general structures (SS material in JIS standard), etc., and reinforced with a rib material etc. can be used.

  An exhaust means 9 is connected to a vacuum container (not shown). Therefore, the inside of the vacuum vessel and the inside of the discharge chamber (process chamber) 2, the converter 3 </ b> A, and the converter 3 </ b> B are evacuated by the exhaust unit 9. The exhaust means 9 is not particularly limited in the present invention. For example, a known vacuum pump, a pressure adjusting valve, a vacuum exhaust pipe, and the like can be used.

  The discharge chamber 2 is a container-like part formed of a conductive non-magnetic or weak magnetic material such as an aluminum alloy material, and is formed in a so-called double ridge type waveguide tube. is there. Since the inside of the discharge chamber 2 and the converters 3A and 3B is brought to a vacuum state of about 0.1 kPa to 10 kPa by the exhaust means 9, the discharge chamber 2 and the converters 3A and 3B can withstand a pressure difference between the inside and the outside. It is said that.

  In the present embodiment, the direction in which the discharge chamber 2 extends is defined as the L direction (the left-right direction in FIG. 1), and the direction in which the lines of electric force extend at the time of plasma discharge perpendicular to the surfaces of the ridge electrodes 21a and 21b. (Vertical direction), and a direction along the pair of ridge electrodes 21a and 21b and orthogonal to the E direction is defined as an H direction (a direction orthogonal to the paper surface in FIG. 1).

  As shown in FIGS. 1 to 4, the discharge chamber 2 is provided with a pair of upper and lower discharge exhaust ridge electrodes 21a (one ridge electrode) and a substrate ridge electrode 21b (the other ridge electrode). Yes. These ridge electrodes 21a and 21b form a ridge shape which is a main part in the discharge chamber 2 which is a double ridge waveguide, and are flat plate-like portions arranged to face each other in parallel. The ridge electrodes 21a and 21b are preferably metal plates having a characteristic that the linear expansion coefficient α is small and the heat transfer coefficient λ is large, and the plate thickness t is thin, so that the warp amount due to the temperature difference between the front and back surfaces of the electrode plate is small. . Specifically, SUS304 or the like is preferable as the material of the ridge electrodes 21a and 21b. However, an aluminum-based metal having a remarkably large heat transfer coefficient may be used although the coefficient of linear expansion is large. A plurality of vent holes 23a and 23b are formed in these ridge electrodes 21a and 21b.

  The plate thickness t is preferably 0.5 mm or more and 3 mm or less. Below 0.5 mm, it becomes difficult to maintain the flatness of the exhaust side ridge electrode 21a and the substrate side ridge electrode 21b due to the surface residual stress of the material, and there is a difference in front and back temperature due to the product of the passing heat flux and the plate thickness. Therefore, even in aluminum or aluminum alloy having a large heat transfer coefficient λ, a large and small electrode size with a side exceeding 1 m tends to cause a front-back temperature difference that leads to a convex deformation of approximately 1 mm or more at 3 mm or more. Furthermore, in order to ensure structural handling strength even though the plate thickness t is thin, it is more preferably 1 mm or more and 2 mm or less.

  As shown in FIG. 2, the distance from one exhaust side ridge electrode 21a to the other substrate side ridge electrode 21b is defined as a ridge facing distance d1 (mm). The ridge facing distance d1 is set in a range of about 3 to 30 mm according to the frequency of the high frequency power supplies 5A and 5B, the size of the substrate S, the type of plasma film forming process, and the like. A pair of non-ridge waveguides 22a and 22b are provided on both sides of the pair of ridge electrodes 21a and 21b. The vertical cross-sectional shape of the discharge chamber 2 is formed in a substantially “H” shape by the upper and lower ridge electrodes 21 a and 21 b and the left and right waveguides 22 a and 22 b.

  As shown in FIG. 4, the ridge electrodes 21 a and 21 b are connected to a pair of upper and lower overlapping electrode holding portions 22 c provided on the left and right non-ridge waveguides 22 a and 22 b, respectively, such as bolts 14 and nuts 15. It is fastened so as to be disassembled by the fastening member. At least six fastening member insertion holes 24a to 24f through which the bolts 14 are inserted are formed in the peripheral portions of the ridge electrodes 21a and 21b. These fastening member insertion holes 24a to 24f are provided with long hole shapes in the thermal expansion direction of the ridge electrodes 21a and 21b with respect to the electrode holding portion 22c. In addition, fastening member insertion holes 25a to 25f are formed in the electrode holding portion 22c similarly to the fastening member insertion holes 24a to 24f. The bolt 14, the nut 15, the fastening member insertion holes 24a to 24f, and the fastening member insertion holes 25a to 25f constitute thermal expansion absorbing means.

  Here, for example, only the fastening member insertion hole 24a provided at the center of one side of the ridge electrodes 21a and 21b is formed in a circular shape as a positioning hole, and the other fastening member insertion holes 24b to 24f are fastening members. It is formed in the shape of a long hole extending in the radial direction that is the direction of hot drawing from the insertion hole 24a. The fastening force between the bolt 14 and the nut 15 is such that when the ridge electrodes 21a and 21b are thermally expanded, the bolt 14 is relatively slid in the longitudinal direction of the oval fastening member insertion holes 24b to 24f. , 21b is controlled to a strength that allows the thermal elongation. Alternatively, a spring washer is interposed, and the bolt 14 and the nut 15 are tightened to such an extent that the spring washer is not crushed.

  In this way, the shape of the fastening member insertion holes 24b to 24f is formed as a long hole extending in the radial direction which is the heat extension direction from the fastening member insertion hole 24a which is a positioning hole, so that the ridge electrodes 21a and 21b are thermally expanded. The relative positions of the ridge electrodes 21a and 21b and the electrode holding portion 22c at the position of the fastening member insertion holes 24a do not change, but the ridge electrodes 21a and 21b are connected to the electrode holding portions 22c at the positions of the other fastening member insertion holes 24b to 24f. Can be relatively moved in the longitudinal direction of the fastening member insertion holes 24b to 24f, the horizontal expansion of the ridge electrodes 21a and 21b due to thermal expansion is smoothly absorbed, and the deformation of the ridge electrodes 21a and 21b is restrained. Therefore, deformation such as uneven deformation, warpage, and distortion is suppressed.

  The fastening member insertion holes 24b to 24f do not necessarily have a long hole shape. When only the relative position between the ridge electrodes 21a and 21b and the electrode holding portion 22c is not changed, the outer diameter of the bolt 14 is simply used. The same effect can be obtained even if the inner diameter is sufficiently larger than the inner diameter of the hole. Further, the fastening member insertion holes 25a to 25f on the electrode holding portion 22c side may have a perfect circle shape. In addition, it is preferable that the bolt 14 is thinned to have a curved surface so that the head of the bolt 14 that is a fastening material does not protrude to the inside of the electrode surface (plasma generation side). Further, when the long holes 24b to 24f are enlarged so that the long hole shape is longer as the long hole is located farther from the fastening member insertion hole 24a which is the positioning hole, the deterioration of the electrode strength due to unnecessary long hole installation is prevented. It is more preferable because it is possible.

  On the other hand, the converters 3A and 3B are container-like parts formed of a conductive non-magnetic or weak magnetic material such as an aluminum alloy material, similar to the discharge chamber 2. Similarly, it is formed in a double ridge waveguide tube. Since the insides of the converters 3A and 3B are brought into a vacuum state of about 0.1 kPa to 10 kPa by the exhaust means 9 similarly to the discharge chamber 2, the converters 3A and 3B have a structure that can withstand the pressure difference between the inside and the outside. ing.

  As shown in FIG. 1, the converters 3A and 3B are provided with a pair of upper and lower flat ridges 31a and 31b, respectively. These ridge portions 31a and 31b form a ridge shape in the converters 3A and 3B, which are double ridge waveguides, and are arranged to face each other in parallel. A pair of non-ridge waveguides 32a and 32b are provided on both sides of the pair of ridges 31a and 31b. A distance from one ridge 31a to the other ridge 31b in the converters 3A and 3B is determined as a ridge facing distance d2 (mm) (see FIG. 1).

  The ridge facing distance d2 is set in a range of about 50 to 200 mm according to the frequency of the high frequency power supplies 5A and 5B, the size of the substrate S, the type of plasma film forming process, and the like. That is, the ridge facing distance d1 (approximately 3 to 30 mm) between the ridge electrodes 21a and 21b in the discharge chamber 2 is larger than the ridge facing distance d2 (approximately 50 to 200 mm) between the ridge portions 31a and 31b in the converters 3A and 3B. Therefore, a ridge step D (see FIG. 1) of several tens to several tens of millimeters exists at the boundary between the ridges 31a and 31b and the ridge electrodes 21a and 21b.

  The high frequency power supplied from the high frequency power supplies 5A and 5B is transmitted to the ridge electrodes 21a and 21b of the discharge chamber 2 through the coaxial cables 4A and 4B and the converters 3A and 3B, and the gap between the ridge electrodes 21a and 21b is provided narrow. As a result, a strong electric field is generated, and plasma is generated by introducing the mother gas between the ridge electrodes 21a and 21b, and the material gas of the mother gas is decomposed and activated to generate a film-forming species. Of the generated film forming species, the film that has moved by diffusion toward the substrate S is formed with a film on the substrate S and subjected to a film forming process.

  By the way, the coaxial cables 4A and 4B have an outer conductor 41 and an inner conductor 42. The outer conductor 41 is electrically connected to, for example, the upper ridge portion 31a of the converters 3A and 3B, and the inner conductor 42 is connected to the upper side. The ridge portion 31a and the internal spaces of the converters 3A and 3B are electrically connected to the lower ridge portion 31b. The coaxial cables 4A and 4B lead the high frequency power supplied from the high frequency power supplies 5A and 5B to the converters 3A and 3B, respectively. As the high frequency power supplies 5A and 5B, known ones can be used, and are not particularly limited in the present invention. The converters 3A and 3B convert the transmission mode of the high-frequency power from the TEM mode that is the coaxial transmission mode to the TE mode that is the basic transmission mode of the rectangular waveguide, and transmits the converted transmission mode to the discharge chamber 2. Plasma is generated during 21b.

  Due to the characteristics of the waveguide, the electric field intensity distribution in the direction along the ridge electrode (H direction) is substantially uniform between the pair of ridge electrodes 21a and 21b. Furthermore, by using a ridge waveguide, it is possible to obtain a strong electric field strength that can generate plasma between the pair of ridge electrodes 21a and 21b. The discharge chamber 2, the converter 3A, and the converter 3B may be configured by a double ridge waveguide or may be configured by a single ridge waveguide.

  On the other hand, a standing wave is formed in the discharge chamber 2 by the high frequency power supplied from the high frequency power source 5A and the high frequency power supplied from the high frequency power source 5B. At this time, if the phase of the high-frequency power supplied from the power supply 5A and the power supply 5B is fixed, the position (phase) of the standing wave is fixed, and the discharge chamber 2 extends in the pair of ridge electrodes 21a and 21b. There is a bias in the distribution of the electric field strength in a certain L direction. Therefore, the position of the standing wave formed in the discharge chamber 2 is adjusted by adjusting the phase of the high frequency power supplied from at least one of the high frequency power source 5A and the high frequency power source 5B. Thereby, the distribution of the electric field intensity in the L direction in the pair of ridge electrodes 21a and 21b is made uniform on a time average basis.

  Specifically, the position of the standing wave is supplied from the high-frequency power source 5A and the high-frequency power source 5B so as to move in the L direction in the L direction as time elapses, in a sine wave shape, a triangular wave shape, or a staircase (step) shape. The phase of the high frequency power is adjusted. The range in which the standing wave moves, the method of moving the standing wave (Sin wave shape, triangular wave shape, stepped shape, etc.) and the optimization of the phase adjustment period are based on the power distribution, the light emission distribution from the plasma, It is performed based on the distribution of plasma density, the distribution of characteristics related to the formed film, and the like. Examples of characteristics relating to the film include film thickness, film quality, and characteristics as a semiconductor such as a solar cell. The plasma is uniform in both the H and L directions with respect to the substrate S by the characteristics of the ridge waveguide formed with the ridge portion and the phase modulation of the high frequency power supplied from the high frequency power supplies 5A and 5B. Can be produced in a wide range, and a high-quality film can be uniformly formed when forming a film on a large-area substrate.

  As shown in FIGS. 2 and 3, a soaking temperature controller 11 is provided below the substrate-side ridge electrode 21b (in the −E direction). The top surface 11a of the soaking temperature controller 11 is flat and parallel to the substrate-side ridge electrode 21b, and is spaced from the lower surface of the substrate-side ridge electrode 21b by several millimeters to several tens of millimeters. A heat medium flow passage 11 b is connected to the soaking temperature controller 11. Then, the substrate S on which the plasma film forming process is performed is placed on the upper surface 11 a of the soaking temperature controller 11. That is, the substrate S is disposed outside the discharge chamber 2 and is heated uniformly by the soaking temperature controller 11. As the substrate S, a translucent glass substrate can be exemplified. For example, what is used for a solar cell panel has a vertical and horizontal size of 1.4 m × 1.1 m and a thickness of 3.0 mm to 4.5 mm.

On the other hand, the mother gas supply means 10 is accommodated in the non-ridge waveguides 22a and 22b provided at both ends of the discharge chamber 2, and is provided along the longitudinal direction of the inner space. 10a and a mother gas (for example, SiH) containing a source gas necessary for performing a plasma film forming process on the surface of the substrate S between the mother gas supply tube 10a and the ridge electrodes 21a and 21b inside the discharge chamber 2 _And a plurality of mother gas ejection holes 10b to be ejected. The gas ejection holes 10b are provided with a plurality of gas ejection holes 10b with an appropriate ejection diameter so that the mother gas is ejected substantially uniformly between the ridge electrodes 21a and 21b. It should be noted that the mother gas ejected from the mother gas ejection hole 10b is not immediately diffused, but is lined up on the side surface of the mother gas supply pipe 10a so as to diffuse evenly between the upper and lower ridge electrodes 21a and 21b. A bowl-shaped guide plate 10c is provided above and below the plurality of mother gas supply pipes 10a. These mother gas supply pipes 10a, gas ejection holes 10b and guide plates 10c constitute mother gas supply means 10.

  For example, the gas flow velocity ejected from each gas ejection hole 10a is preferable because it generates a choke phenomenon by exceeding the speed of sound, resulting in a uniform gas flow velocity. Although depending on the mother gas flow rate and pressure conditions, it is exemplified that the number of gas ejection holes 10a is set using φ0.3 mm to φ0.5 mm as the ejection diameter. In addition, the saddle-shaped guide plate 10c has a gap between the slit-shaped guide plate pairs of about 0.5 mm to 2 mm, and the width (in the H direction in FIG. 3) of the guide plate 10c serving as the gas running length is the mother gas supply. The diameter is about 1 to 3 times the diameter of the tube 10.

  The heat absorption temperature control unit 12 has a structure in which a manifold 12a capable of uniforming vacuum exhaust and a temperature controller 12b capable of heat absorption are integrated, and the outer surface side (upper part) of the exhaust side ridge electrode 21a. By controlling the temperature of the ridge electrode 21a, the heat flux passing through the thickness direction of the substrate S to be subjected to plasma processing is controlled, and warpage deformation of the substrate S can be suppressed. .

  The manifold 12a and the temperature controller 12b of the heat absorption temperature control unit 12 are formed as a rigid integrated structure by machining an aluminum alloy or die casting, and the planar shape thereof is the same as that of the exhaust-side ridge electrode 21a. They have substantially the same planar shape. A flat flat surface portion 12c facing the exhaust side ridge electrode 21a is formed on the lower surface of the heat absorption temperature control unit 12, and the exhaust side ridge electrode 21a is held in strong and thermal contact with the flat surface portion 12c. The exhaust-side ridge electrode 21a is in close contact with and integrated with the flat portion of the heat absorption temperature control unit 12, and is fixed so that the exhaust-side ridge electrode 21a is not deformed. Alternatively, the exhaust-side ridge electrode 21a is held by a fixing member (not shown) so as not to be separated from the plane portion 12c, and is held so as to be relatively movable in the plane direction with respect to the plane portion 12c at the time of thermal expansion, so that the dimensional difference can be absorbed. May be.

  That is, when the exhaust ridge electrode 21a and the heat absorption temperature adjustment unit 12 have a large difference in thermal expansion coefficient, the exhaust ridge electrode 21a is different from the positioning hole 24a provided at the center of one end side of the substrate S and the thermal expansion difference. Exhaust-side ridge electrode that has been thermally expanded by appropriately providing the direction of the slide long holes 24b to 24f provided at the corners and the peripheral positions so as to absorb the heat in the direction of thermal expansion. 21a is smoothly deformed in the horizontal direction without causing irregularities, and suppresses deformation while being in close contact with the highly rigid heat absorption temperature control unit 12.

  Further, it is more preferable that a slide long hole 24g in the ± H direction is provided in the vicinity of the center of the exhaust-side ridge electrode 21a so as to be in close contact with the heat absorption temperature control unit 12, but the head of the fastening material is inside the electrode surface ( When the head of the fastening material has a thin curved surface, or the slide long hole 24g is provided with a stepped portion into which the head of the fastening material enters approximately half of the plate thickness so as not to protrude to the plasma generation side) preferable. Further, when the long slot holes 24b to 24f and 24g are extended so that the long hole shape in the thermal expansion direction becomes longer as the long hole is located farther from the positioning hole 24a, the electrode strength due to unnecessary long hole installation is increased. Since it can prevent a fall, it is more preferable.

  As shown in FIG. 3, a wide common space 12d extending in the horizontal direction is formed inside the manifold 12a. An exhaust pipe 12e serving as a header part of the manifold 12a is erected at the center of the upper surface of the manifold 12a, and an exhaust means 9, that is, a vacuum pump (not shown) is connected to the exhaust pipe 12e. Further, as shown in FIGS. 7A and 7B, a plurality of suction ports 12f are formed in the lower surface (plane portion 12c) of the manifold 12a. These suction ports 12f communicate with the exhaust pipe 12e through a common space 12d. 7A is a cross-sectional view of the heat absorption temperature control unit 12 alone, and FIG. 7B is a plan view showing a state in which the exhaust-side ridge electrode 21a is superimposed on the heat absorption temperature control unit 12. is there.

  The common space 12d of the heat absorption temperature control unit 12 communicates with the discharge chamber 2 through a suction port 12f and a number of vent holes 23a provided in the exhaust ridge electrode 21a. Furthermore, inside the heat absorption temperature control unit 12, a temperature control medium flow path (heat medium flow path) 12g through which a heat medium (temperature control medium) as a main part of the temperature controller 12b flows is disposed. . As shown in FIG. 7, the temperature control medium flow passage 12 g is introduced from a heat medium flow path inlet provided near the center of one end of the heat absorption temperature control unit 12 in a plan view. It is laid out so as to extend inward from the outer peripheral side, surround each suction port 12f, and come out again to the outer peripheral side, and a heat medium such as pure water or fluorinated oil circulates in the interior. For this reason, the temperature of the exhaust-side ridge electrode 21a provided in close contact with the flat portion 12b can be made uniform.

  In this case, the heat medium is easily affected by heat transfer with the surrounding structure by passing the heat medium from the outer peripheral side of the temperature controller 12b of the heat absorption temperature control unit 12 to the inner side and flowing out from the outlet of the heat medium flow path. A heat medium controlled to a predetermined temperature is introduced from the side, and this is guided inward to make the temperature of the exhaust manifold 12a uniform over the entire surface. In this case, the heat medium flow path 12g is divided into two systems in order to make the whole temperature more uniform, and each heat medium flow path 12g is provided avoiding the exhaust port 12f, but is limited to this. There is nothing. In addition, the heating medium supplied to the temperature control medium flow path (heating medium flow path) 12 g is used by using a heating apparatus and a cooling apparatus (not shown) in a heating medium circulation path (not shown) separated from the film forming apparatus 1. The temperature is raised or lowered to a predetermined temperature.

  Furthermore, since the heat absorption temperature control unit 12 absorbs heat generated by the reaction (Si (film or powder) + 4F → SiF4 (gas) +1439 kcal / mol) during self-cleaning, the temperature of the structure is increased and the constituent materials are increased. This is also effective because corrosion is not accelerated by F-based radicals during self-cleaning. The heat absorption temperature adjustment unit 12 performs heat absorption or heating by circulating a heat medium controlled at a predetermined temperature in consideration of the heat balance in the discharge chamber 2 at a predetermined flow rate, and thereby the exhaust side ridge electrode Temperature control of 21a is possible. Accordingly, the heat absorption temperature adjustment unit 12 appropriately absorbs energy generated by the plasma supplied from the high frequency power supplies 5A and 5B, and from the plasma of the ridge electrodes 21a and 21b to the soaking temperature controller 11 where the substrate S is installed. Generation of temperature difference between the front and back of the substrate S due to the amount of heat passing through the substrate S and the amount of heat passing through the substrate S from the soaking temperature controller 11 to the heat absorption temperature adjusting unit 12 is reduced. It is effective for suppressing heat deformation in a convex manner.

  As shown in FIGS. 5 and 6, the inner diameter of the vent hole 23a formed in the exhaust side ridge electrode 21a is set larger than the inner diameter of the vent hole 23b formed in the substrate side ridge electrode 21b. The inner diameter of the vent hole 23a of the exhaust side ridge electrode 21a is set in a range of φ2 to 5 mm, for example, considering that uniform exhaust can be performed and the exhaust resistance does not increase. Further, the inner diameter of the vent hole 23b of the substrate side ridge electrode 21b is set in a range of φ1 to 3 mm, and the inner diameter of 23a is larger than the inner diameter of 23b.

  Then, considering that the through-hole 23a of the exhaust-side ridge electrode 21a can perform uniform exhaust, it is considered that the vent hole 23b of the substrate-side ridge electrode 21b can form a uniform film. The aperture ratio of the vent holes 23a and 23b per unit area in each ridge electrode 21a and 21b is a pitch where the center of the plane of each ridge electrode 21a and 21b is dense and the periphery is rough. In this way, the material gas is supplied from the peripheral direction of the exhaust side ridge electrode 21a, that is, from the mother gas supply pipe 10a in the non-ridge portion waveguides 22a and 22b to the center of the surface of the substrate side ridge electrode 21b. The material gas is supplied so that the film forming species reaches the center of the surface of the substrate S where the film forming species is diffused from the substrate-side ridge electrode 21b, and the film forming species is uniformly distributed within the surface of the substrate S. It is a device to make the spread.

  Therefore, when the mother gas is evacuated from the exhaust side ridge electrode 21a by the exhaust means 9, at least the opening per unit area in the through hole 23a in the exhaust side ridge electrode 21a or the vent hole 23b in the substrate side ridge electrode 21b. The rate is higher in the position range close to the exhaust means 9 (position range far from the mother gas supply pipe 10a) than in the position range close to the mother gas supply pipe 10a. Specifically, in the range near the center, which is 30% to 50% of the vertical and horizontal sides of the ridge electrodes 21a and 21b, the pitch interval of the air holes 23a and 23b is set to a high density of about 10 to 30 mm. In the range, the pitch interval is roughly set to about 30 to 100 mm. Alternatively, openings per unit area can be obtained by setting the pitch intervals of the vent holes 23a and 23b to be equal throughout the entire area, and increasing the inner diameters of the vent holes 23a and 23b in the vicinity of the center and decreasing in the surrounding area. The rate may be varied. At least in the through-hole 23a in the exhaust-side ridge electrode 21a or the vent hole 23b in the substrate-side ridge electrode 21b, a distribution is provided in the effective hole size and pitch in the ridge electrode surface, and a distribution in the exhaust conductance is provided. The resistance is not increased, and the mother gas is evenly distributed in the discharge chamber 2 so that stable film formation can be performed.

  As shown in FIG. 7B, the suction port 12f of the heat absorption temperature control unit 12 and the vent hole 23a provided in the upper ridge electrode 21a are not necessarily formed so as to be aligned with each other. It is necessary to form the air holes 23a so that the number of the air holes 23a aligned with the suction ports 12f is substantially equal.

  As described above, the pair of ridge electrodes 21a and 21b are thin metal plates having a thickness of 0.5 mm to 3 mm. Since the exhaust-side ridge electrode 21a is held in close contact with the lower surface (planar portion 12c) of the heat absorption temperature control unit 12, there is little concern that the exhaust-side ridge electrode 21a bends or warps. However, since both surfaces of the substrate-side ridge electrode 21b are not in contact with each other, the center portion of the substrate-side ridge electrode 21b is bent downward due to its own weight. For this reason, the lower ridge electrode 21b is suspended by a plurality of cord-like suspension members 27 suspended downward from the heat absorption temperature control unit 12. The material of the suspension member 27 is preferably a dielectric material such as ceramics or a thin material having a metal rod covered with a dielectric material so as not to disturb the electric field in the discharge chamber 2. The suspension member 27 holds a plurality of points including the periphery and the center of the ridge electrode 21b, and can adjust the length of each. For this reason, the substrate side ridge electrode 21b is supported in parallel and flat with respect to the exhaust side ridge electrode 21a.

As shown in FIG. 3, an adhesion preventing plate 29 having a shape surrounding the substrate side ridge electrode 21 b and the soaking temperature controller 11 from below (from the −E direction to the + E direction) is provided. The deposition preventing plate 29 is provided so as to be slidable in the axial direction (± E direction) with respect to the support column 30 extending from the lower surface of the soaking temperature controller 11, and has a bowl shape formed in the intermediate portion of the support column 30. the stopper 30a, and is always biased in the ridge electrode 21b side by the spring 3 3 that is elastically interposed between the deposition preventing plate pressing member 31 interposed between 30b. The support column 30 supports the soaking temperature controller 11 and moves in the ± E direction when the substrate S is transported, and has a pipe for circulating and supplying a heating medium and the like to the soaking temperature controller 11 inside. It is possible to install.

By providing this deposition preventing plate 29, the place where film-forming radicals and powders that diffuse during film-forming on the substrate S placed on the upper surface 11a of the soaking temperature controller 11 are attached or accumulated is limited, The deposition of the film forming material to the region not involved in the film formation of the film forming apparatus 1 is suppressed. Deposition preventing plate 29, by pressing down with the lower (the -E direction) slides against the biasing force of the spring 3 3, changing the positional relationship between the soaking temperature controller 11 as needed, such as during substrate transfer As a result, there is a gap between the deposition preventing plate 29 and the lower ridge electrode 21b, so that the substrate S placed on the upper surface 11a of the soaking temperature controller 11 can be easily carried in and out. it can.

  The above-described soaking temperature controller 11 may adopt a conventional structure constituted by a soaking plate and a substrate table whose temperature is controlled by circulation of a heating medium having a predetermined temperature and a predetermined flow rate. In addition, the film forming apparatus that maintains the soaking temperature controller 11 at a constant temperature and operates under film forming conditions that do not require heat absorption may be a soaking plate having an electric heater instead of a heat medium circulation. Well, it is possible to reduce cost and simplify control.

  In the film forming apparatus 1 configured as described above, a plasma film forming process is performed on the substrate S installed inside the discharge chamber 2 by the following procedure.

  First, air is discharged from the discharge chamber 2 and the converters 3A and 3B by the exhaust means 9. At this time, the air inside the discharge chamber 2, the converters 3A and 3B, and the deposition preventing plate 29 passes through the vent holes 23a and 23b formed in the pair of ridge electrodes 21a and 21b, and the heat absorption temperature control unit 12 ( The air is sucked into the suction hole 12f of the manifold 12a), passes through the common space 12d and the exhaust pipe 12e, and is exhausted to the outside through a pressure adjusting valve and a vacuum pump (not shown). Next, the deposition preventing plate 29 is pushed down (-E direction), and the substrate S is placed on the upper surface 11a of the soaking temperature controller 11 (FIG. 3).

Further, high-frequency power having a frequency of 13.56 MHz or more, preferably 30 to 400 MHz, is discharged from the high-frequency power supplies 5A and 5B through the circulators 7A and 7B and the matching units 6A and 6B, the coaxial cables 4A and 4B, and the matching units 6A and 6B. While being supplied to the ridge electrodes 21a and 21b of the chamber 2, a mother gas such as SiH ₄ gas is supplied from the mother gas supply means 10 to the ridge electrodes 21a and 21b. At this time, the exhaust amount of the exhaust means 9 is controlled, and the pressure inside the discharge chamber 2 or the like, that is, the pressure between the ridge electrodes 21a and 21b is maintained in a vacuum state of about 0.1 kPa to 10 kPa.

  The high frequency power supplied from the high frequency power supplies 5A and 5B is transmitted to the converters 3A and 3B via the coaxial cables 4A and 4B and the matching units 6A and 6B. The matching units 6A and 6B adjust values such as impedance in a system that transmits high-frequency power. In the converters 3A and 3B, the transmission mode of the high frequency power is converted from the TEM mode that is the coaxial transmission mode to the TE mode that is the basic transmission mode of the rectangular waveguide.

  In such a state, the mother gas is ionized between the ridge electrodes 21a and 21b to generate plasma. The film-forming species generated by this plasma reaches the substrate S through diffusion through the air holes 23b formed in the substrate-side ridge electrode 21b, and is uniform on the substrate S, such as an amorphous silicon film or a crystal. A quality silicon film is formed.

  Since the discharge chamber 2 is a ridge waveguide in which ridge portions (ridge electrodes 21a and 21b) are formed, the electric field intensity distribution in the H direction is substantially uniform between the ridge electrodes 21a and 21b due to the characteristics thereof. Further, the position of the standing wave formed in the discharge chamber 2 is changed by temporally modulating the phase of the high frequency power supplied from at least one of the high frequency power source 5A and the high frequency power source 5B, and the ridge electrodes 21a and 21b are changed. The distribution of the electric field intensity in the L direction at is uniformed on a time average basis. By using the ridge waveguide, an effect of low transmission loss is added, and the area where the electric field intensity distribution is almost uniform in both the H direction and the L direction can be easily increased.

  In the vacuum processing apparatus 1 according to the present embodiment, the heat absorption temperature adjustment unit 12 is installed above the exhaust side ridge electrode 21a in the discharge chamber 2, and the heat absorption temperature adjustment unit 12 allows the temperature of the exhaust side ridge electrode 21a and the substrate S to be adjusted. Since the heat flux passing through the plate thickness direction is controlled, deformation (warping) due to thermal expansion of the exhaust-side ridge electrode 21a and the substrate S is suppressed to ensure uniform plasma characteristics, and high-quality plasma deposition Processing can be performed.

  That is, the heat absorption temperature adjustment unit 12 performs heat absorption and heating by circulating a heat medium controlled to a predetermined temperature in consideration of the heat balance in the discharge chamber 2 at a predetermined flow rate, and the like, and the exhaust side ridge electrode 21a temperature control is possible. Accordingly, the heat absorption temperature adjustment unit 12 appropriately absorbs energy generated by the plasma supplied from the high frequency power supplies 5A and 5B, and from the plasma of the ridge electrodes 21a and 21b to the soaking temperature controller 11 where the substrate S is installed. Generation of temperature difference between the front and back of the substrate S due to the amount of heat passing through the substrate S and the amount of heat passing through the substrate S from the soaking temperature controller 11 to the heat absorption temperature adjusting unit 12 is reduced. It is effective for suppressing heat deformation in a convex manner.

  Further, the heat absorption temperature control unit 12 (manifold 12a) is formed as a rigid body, and the exhaust side ridge electrode 21a is held so as to be in close contact with the flat surface portion 12c formed on the lower surface of the heat absorption temperature control unit 12. Therefore, the exhaust-side ridge electrode 21a can be further reliably prevented from being deformed (warped) due to thermal expansion, ensuring uniform plasma characteristics, and performing high-quality plasma deposition.

  Further, the substrate side ridge electrode 21b is suspended from the heat absorption temperature control unit 12 via a plurality of suspension members 27, and the substrate side ridge electrode 21b is supported in parallel and flat with respect to the exhaust side ridge electrode 21a. The substrate side ridge electrode 21b is suspended flat by the heat absorption temperature control unit 12 formed as a rigid body, thereby improving the flatness of the substrate side ridge electrode 21b and improving the parallel accuracy to the exhaust side ridge electrode 21a. It is possible to perform high-quality plasma film formation processing while ensuring uniform plasma characteristics in the discharge chamber 2.

  In addition, since the pair of ridge electrodes 21a and 21b are formed of a thin metal plate having a thickness of 0.5 mm to 3 mm, when the temperature of the ridge electrodes 21a and 21b is controlled, the front and back temperature generated by the passing heat flux is small, It becomes quick and uniform. Therefore, warpage of the ridge electrodes 21a and 21b can be prevented, and uniform plasma characteristics can be ensured and high-quality plasma film forming processing can be performed.

  In addition, the exhaust means 9 for exhausting the gas inside the discharge chamber 2 and the converters 3A and 3B, and the mother gas necessary for performing plasma treatment on the substrate S are supplied between the pair of ridge electrodes 21a and 21b. Since the mother gas supply means 10 is provided, the mother gas whose material gas flow rate is always controlled is supplied to the discharge chamber 2 substantially uniformly, and the film quality deteriorating elements such as Si nanoclusters generated at the time of plasma generation are supplied to the exhaust side ridge electrode. 21b can be quickly discharged to the outside by the exhaust means 9 to perform a high quality plasma film forming process.

  Further, a plurality of vent holes 23a and 23b are formed in the ridge electrodes 21a and 21b, and the heat absorption temperature control unit 12 is formed in a manifold shape communicating with the discharge chamber 2 through the vent holes 23a and 23b. A temperature adjusting medium flow passage 12g through which the temperature adjusting medium flows is formed, and the exhaust means 9 is connected to an exhaust pipe 12e which is a header portion of the heat absorption temperature adjusting unit 12, and this heat absorption temperature adjusting unit 12 is connected. Since the gas inside the discharge chamber 2 and the converters 3A and 3B is discharged through the manifold shape of the heat absorption temperature control unit 12, the manifold shape of the heat absorption temperature control unit 12 can be used in a wide range of the ridge electrodes 21a and 21b. The inside of the discharge chamber 2 can be exhausted. Therefore, the distribution of the mother gas in the discharge chamber 2 can be made uniform to stabilize the plasma, and a high quality plasma film forming process can be performed.

  Further, the evacuation means has an opening ratio of the vent holes 23a and 23b per unit area in the ridge electrodes 21a and 21b as compared with a range position close to the mother gas supply means 10 (mother gas supply pipe 10a) with respect to the evacuation means 9. 9 (exhaust pipe 12e) is higher in the range position so that the mother gas is evenly distributed in the discharge chamber 2 and is produced by plasma from the mother gas between the ridge electrodes 21a and 21b. The film type reaches the upper surface of the substrate S by diffusion through the air holes 23b of the substrate-side ridge electrode 21b, and a stable plasma film forming process can be performed on the substrate S.

  Further, the mother gas supply means 10 is accommodated in the non-ridge waveguides 22a and 22b provided at both ends of the discharge chamber 2, and extends in the longitudinal direction, and the mother gas supply pipe 10a Since the plurality of mother gas ejection holes 10b for ejecting the mother gas between the upper and lower ridge electrodes 21a and 21b and the bowl-shaped guide plate 10c are provided, the internal spaces of the non-ridge waveguides 22a and 22b are effectively used. In order to make the vacuum processing apparatus 1 more compact by using it, the mother gas is uniformly distributed from the non-ridge waveguides 22a and 22b at both ends of the discharge chamber 2 to the inside of the discharge chamber 2 to make the plasma uniform. High-quality plasma film forming treatment can be performed.

  Further, fastening member insertion holes 24a to 24f for fastening the ridge electrodes 21a and 21b to the electrode holding portions of the non-ridge portion waveguides 22a and 22b with bolts 14 and nuts 15 position the fastening member insertion holes 24a. As a point, the shape of the ridge electrodes 21a and 21b with respect to the electrode holding portion 22c is enlarged in the elongated hole along the direction of thermal expansion, and the fastening force between the bolt 14 and the nut 15 is increased during the thermal expansion of the ridge electrodes 21a and 21b. Since the elongation is set to an allowable strength, the fastening member insertion holes 24a of the ridge electrodes 21a and 21b with respect to the electrode holding portion 22c are formed even when the ridge electrodes 21a and 21b are thermally expanded and have a dimension in the plane direction. Since the position of ˜24f can be moved relative to the relative position while managing the relative position, no stress is applied to the ridge electrodes 21a and 21b. No longer cause shape, whereby the upper and lower ridge electrodes 21a, to generate a uniform plasma maintained in parallel between 21b, it is possible to perform high-quality plasma film forming process.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 8 is a longitudinal sectional view showing a film forming apparatus 41 according to the second embodiment of the present invention, and FIG. 9 is an exploded perspective view around the discharge chamber 2 and the ridge electrode facing distance adjusting mechanism 42 of the film forming apparatus 41. is there. 8 and 9, the same components as those of the film forming apparatus 1 of the first embodiment shown in FIGS. 3 and 4 are not denoted by the same reference numerals, or the same reference numerals are used for the description. Omitted.

  In the film forming apparatus 41, the distance between the ridge electrodes 21a and 21b (ridge facing distance d1) can be adjusted in a state where the distance between the pair of ridge electrodes 21a and 21b in the discharge chamber 2 is maintained in parallel. A ridge electrode facing distance adjusting mechanism 42 (ridge electrode facing distance adjusting means) is provided. The ridge electrode facing distance adjusting mechanism 42 suspends the substrate-side ridge electrode 21b from above by a plurality of suspension members 43 and supports the substrate-side ridge electrode 21b in parallel with the exhaust-side ridge electrode 21a. It is configured to move parallel to the ridge electrode 21a.

  Further, the ridge electrode facing interval adjusting mechanism 42 maintains the waveguide characteristics without changing the L-direction cross-sectional shape of the non-ridge waveguides 22a and 22b, while maintaining the transmission characteristics so as not to change. The substrate-side ridge electrode 21b is moved in parallel with the exhaust-side ridge electrode 21a so that the facing distance between both ridge electrodes 21a and 21b can be adjusted.

  For example, a suspension frame member 44 formed in a frame shape is provided on the upper portion of the heat absorption temperature control unit 12, and this suspension frame member 44 is slid up and down (± E direction) by an unillustrated vertical slide mechanism. It is supposed to be. Then, for example, the upper end portions of a total of eight suspension members 43 are connected to the suspension frame member 44, and these suspension members 43 extend downward (−E direction) from the suspension frame member 44 and are heated. The absorption temperature control unit 12, the exhaust-side ridge electrode 21a, and the inner space of the discharge chamber 2 pass through, and the lower end thereof includes at least the vicinity of the center of the substrate-side ridge electrode 21b, preferably the vicinity of the center and the vicinity of the periphery. Connected to more than 8 locations. The number of the suspension members 43 may be appropriately increased or decreased so that the flatness of the substrate-side ridge electrode 21b can be secured with respect to its own weight. The suspension member 43 is the same as the suspension member 27 in the first embodiment.

  The material of the suspension member 43 is preferably a dielectric material such as ceramics or a material with a thin diameter covering the periphery of a metal rod so as not to disturb the electric field in the discharge chamber 2. For example, as the suspension member 43, a SUS304 wire having a diameter of 0.3 to 1 mm covered with an alumina ceramic dielectric can be used. In this way, since the substrate-side ridge electrode 21b is held by the plurality of thin suspension members 43, even if the substrate-side ridge electrode 21b is thermally expanded due to thermal expansion, there is no stress restraining in the ridge electrode surface direction. This is preferable because deformation such as bending and warping does not occur.

  In the portion where the suspension member 43 penetrates the heat absorption temperature control unit 12, the suspension member 43 is slid in the axial direction while maintaining airtightness with the manifold shape leading to the exhaust means 9 inside the heat absorption temperature control unit 12. A seal support member 45 that is freely held may be provided. The exhaust ridge electrode 21a is provided with a through hole 46 (see FIG. 9) for allowing the suspension member 43 to pass therethrough. The inner diameter of the through hole 46 disturbs the electric field in the discharge chamber 2. In order to prevent the suspension member 43 from passing, it is desirable that the suspension member 43 has a minimum size that allows the suspension member 43 to pass through without interference. Alternatively, the suspension member 43 may be passed through a plurality of vent holes 23a formed in the exhaust ridge electrode 21a.

  On the other hand, both sides in the H direction of the substrate side ridge electrode 21b are fastened and fixed to the electrode holding portions 22c of the non-ridge portion waveguides 22a and 22b. As shown in FIG. 8, there is provided a slide adjusting portion 47 that slides the position of the electrode holding portion 22c up and down (± E direction) with respect to the non-ridge portion waveguides 22a and 22b. The slide adjusting unit 47 is also a component of the ridge electrode facing distance adjusting mechanism 42.

  The slide adjusting unit 47 is configured such that the electrode holding unit 22c is separated from the non-ridge waveguides 22a and 22b and can be slid in the E direction by overlapping the non-ridge waveguides 22a and 22b. It is fastened to fix its height. For this reason, even if the position of the electrode holding portion 22c is slid, the cross-sectional shape in the L direction of the non-ridge portion waveguides 22a and 22b is not changed, and the waveguide characteristics are maintained, so the transmission characteristics do not change. The fastening member 48 preferably has a thin head with a curved surface so that the head does not protrude toward the inner surfaces of the non-ridge waveguides 22a and 22b. Thus, the electrode holding portion 22c, the slide adjusting portion 47, and the fastening member 48 also constitute the ridge electrode facing interval adjusting mechanism 42.

  In the film forming apparatus 41 configured as described above, when the height of the substrate-side ridge electrode 21b is adjusted to adjust the ridge electrode facing distance, the fastening member 48 is loosened and the ridge electrode 21b and the electrode fixing portion 22c. The height of the ridge electrode 21b is changed by moving the suspension frame member 44 up and down by a vertical slide mechanism (not shown) so that the substrate-side ridge electrode 21b has a predetermined height. When it reaches, it is fastened by the fastening member 48 and fixed. As a result, the distance between the ridge electrodes is a predetermined distance d1.

  Thus, according to the film forming apparatus 41, the ridge electrode support mechanism 42 adjusts the position of the substrate-side ridge electrode 21b in the vertical direction while keeping the pair of ridge electrodes 21a and 21b parallel to each other, and the ridge facing distance d1. Can be set to the optimum value. In addition, since the lower substrate side ridge electrode 21b is suspended by the eight suspension members 43 in a state where the substrate side ridge electrode 21b is thin, the lower substrate side ridge electrode 21b is curved or warped by its own weight. Thus, the substrate-side ridge electrode 21b can be thinned to increase the heat transfer coefficient, and deformation due to front-back temperature difference and thermal expansion can be suppressed. Further, since there is no structure on the front and back surfaces of the substrate-side ridge electrode 21b except for the thin suspension member 43, plasma is generated in the discharge chamber 2 to affect the diffusion of the film-forming species into the substrate S. Absent. For these reasons, a uniform plasma can be generated in the discharge chamber 2 and a high-quality plasma film forming process can be performed on the substrate S.

[Third Embodiment]
Next, a third embodiment of the present invention will be described with reference to FIGS. FIG. 10 is a longitudinal sectional view showing a film forming apparatus 51 according to the third embodiment of the present invention. FIG. 11 is an exploded perspective view around the discharge chamber 2 and the ridge electrode facing distance adjusting mechanism 52 of the film forming apparatus 51. is there. 10 and 11, the same reference numerals are given to the same components as those of the film forming apparatus 41 of the second embodiment shown in FIGS. 8 and 9, and the description thereof will be omitted.

  Also in this film forming apparatus 51, the distance between the ridge electrodes 21a and 21b (ridge facing distance d1) can be adjusted in a state in which the distance between the pair of ridge electrodes 21a and 21b in the discharge chamber 2 is maintained in parallel. A ridge electrode facing interval adjusting mechanism 52 is provided. The ridge electrode facing distance adjusting mechanism 52 includes an electrode support member 53 that supports the substrate-side ridge electrode 21b from below (−E direction). The electrode support member 53 includes, for example, an outer frame portion 53a and a crosspiece portion 53b that is laid in a cross shape inside the outer frame portion 53a, and is formed in a substantially “rice” shape in plan view. The flatness of the upper surface is accurately obtained.

  The substrate-side ridge electrode 21 b is placed on the upper surface of the electrode support member 53, and is held on the electrode support member 53 by a plurality of slide pins 54. The substrate-side ridge electrode 21b is formed with a plurality of pin holes 55 through which the slide pins 54 are inserted, and the pin holes 55 are long to allow thermal expansion of the substrate-side ridge electrode 21b on the electrode support member 53. It is formed in a hole shape. In the plurality of pin holes 55, only the pin hole provided in the center of one side of the substrate-side ridge electrode 21b is formed in a circular shape as a positioning pin hole, and the other pin holes 55 are heated from the positioning pin holes. It is formed in the shape of a long hole extending in the radial direction which is the extending direction. For this reason, the ridge electrode 21b is not restrained even if thermal expansion occurs while maintaining the flatness so that the ridge electrode 21b is kept in close contact with the electrode support member 53 while maintaining a relative position, and thus warps or distorts. There is no. In addition, it is preferable that the head of the slide pin 54 is thin and has a curved surface so that the head of the slide pin 54 does not protrude to the inside of the electrode surface (plasma generation side). The crosspiece 53b is preferably narrow in the range in which the slide pin 54 can be fixed.

  The weight of the peripheral portion and the central portion of the lower surface of the substrate-side ridge electrode 21b is supported by the electrode support member 53 that is formed in a substantially “field” shape in plan view. For this reason, the substrate-side ridge electrode 21b is prevented from being bent downward by its own weight, and the flatness is maintained. Further, the upper surface of the substrate-side ridge electrode 21b is exposed entirely, and the lower surface is also exposed to the extent that at least plasma processing (film formation processing) of the substrate S can be prevented. The planar shape of the electrode support member 53 does not necessarily need to be a square shape, but can support the weight of at least the peripheral portion and the central portion of the substrate-side ridge electrode 21b, and excessively covers the lower surface of the substrate-side ridge electrode 21b. The shape does not disturb the electric field in the discharge chamber 2 and does not hinder the diffusion of the film-forming species through the numerous air holes 23b provided in the substrate-side ridge electrode 21b and reaching the substrate S. It needs to be shaped.

  Both sides in the H direction of the electrode support member 53 are fastened and fixed to the electrode fixing portions 22c provided in the non-ridge waveguides 22a and 22b, as in the film forming apparatus 41 of the second embodiment, and the electrode fixing portions 22c. Is slidably held in the ± E direction by the slide adjusting unit 47, and the electrode support member 53 and the substrate side ridge electrode 21b can be adjusted in the vertical direction (± E direction) in the same manner as the film forming apparatus 41. .

  According to the film forming apparatus 51 configured as described above, the substrate-side ridge electrode 21b is supported flat and parallel to the exhaust-side ridge electrode 21a, and the front and back surfaces of the substrate-side ridge electrode 21b can be used for plasma processing. Therefore, the substrate-side ridge electrode 21b made of a thin metal plate is prevented from being bent by its own weight, the flatness is kept with high accuracy, and uniform plasma is generated in the discharge chamber 2, thereby generating a substrate. A high-quality plasma film forming process can be performed on S.

[Fourth Embodiment]
Next, 4th Embodiment of this invention is described based on FIG. 12, FIG. FIG. 12 is a longitudinal sectional view showing a film forming apparatus 61 according to the fourth embodiment of the present invention. FIG. 13 shows the discharge chamber 2, the ridge electrode facing distance adjusting mechanism 62, and the mother gas supply means of the film forming apparatus 61. FIG. 6 is an exploded perspective view around the mother gas distributor 63 of FIG. In FIGS. 12 and 13, the same components as those of the film forming apparatus 1 of the first embodiment shown in FIGS. 3 and 4 are not denoted by the same reference numerals, or the same reference numerals are used for the description. Omitted.

  In the film forming apparatus 61, the mother gas distribution unit 63 is accommodated in the common space 12 d inside the heat absorption temperature adjustment unit 12. The mother gas distribution unit 63 includes a plurality of mother gas supply pipes 63a extending in parallel along the surface direction of the ridge electrode 21a in the common space 12d, and both ends of each of the mother gas supply pipes 63a. Header pipe 63b, a plurality of mother gas ejection holes 63c drilled in the lower surface of each mother gas supply pipe 63a, and a mother gas introduction pipe 63d connected to each header pipe 63b. . The plurality of mother gas supply pipes 63a and the pair of header parts 63b are assembled in a ladder shape. The mother gas introduction pipe 63d is branched from a main pipe (not shown) so that the mother gas is uniformly supplied. The mother gas passes through the mother gas injection hole 63c, passes through the heat absorption temperature control unit 12, and is connected to the upper and lower ridge electrodes 21a and 21b. Spouted in between.

  Since the mother gas ejection holes 63b can be disposed substantially evenly on the back surface of the exhaust-side ridge electrode 21a inside the discharge chamber 2, the mother gas can be evenly distributed inside the discharge chamber 2. Appropriate distribution processing such as installing an orifice is performed between the header pipe 63b and each of the mother gas supply pipes 63a branched from the header pipe 63b so that the mother gas is evenly distributed to each of the mother gas supply pipes 63a. preferable. In addition, the plurality of mother gas ejection holes 63c are preferable because the gas flow velocity to be ejected exceeds the speed of sound and a uniform gas flow velocity is generated by generating a choke phenomenon, as in the first embodiment. Although depending on the mother gas flow rate and the pressure condition, it is exemplified that the number of mother gas ejection holes 63b is set using φ0.3 mm to φ0.5 mm as the ejection diameter. The mother gas distribution unit 63 is not limited to a ladder shape having a plurality of mother gas supply pipes 63a and header pipes 63b, and may have a structure having a similar function.

  In the fourth embodiment, the exhaust means is connected to the non-ridge waveguides 22 a and 22 b provided at both ends of the discharge chamber 2. Specifically, exhaust pipes 64a and 64b are provided on the top surfaces of the non-ridge portion waveguides 22a and 22b, and an exhaust means 9 such as a vacuum pump (not shown) is connected thereto. In this case, since the appropriate sizes of the non-ridge waveguides 22a and 22b are determined based on the supplied high frequency and transmission mode, the non-ridge waveguides 22a and 22b are guided into a predetermined capacity inside the non-ridge waveguides 22a and 22b. Meshes 65a and 65b for wave tube sections are provided. The meshes 65a and 65b are made of conductive metal, and can partition a potential field without hindering gas exhaust. The lower part in the lower direction (-E direction) than the meshes 65a and 65b ensures an appropriate transmission size. Further, the size and shape of the upper part in the upper direction (+ E direction) from the meshes 65a and 65b can be freely selected as a space necessary for uniform evacuation. The size of the openings of the meshes 65a and 65b is preferably about 3 to 20 mm.

Further, in the exhaust pipe 64 of the exhaust means 9 connected to the non-ridge portion waveguide 2 2a, 2 2b, may be in one place, but still preferably present in a plurality of locations. A plurality of exhaust pipes 64a and 64b are provided on the top surfaces of the non-ridge waveguides 22a and 22b at both ends of the discharge chamber 2, and an exhaust means 9 such as a vacuum pump (not shown) is connected thereto. In FIG. 13, two exhaust pipes 64a and 64b are provided on the upper surfaces of the non-ridge portion waveguides 22a and 22b, respectively, near both ends in the L direction. In this case, the balance of the exhaust capacity of the exhaust pipes 64a and 64b connected to the non-ridge waveguides 22a and 22b can be changed by a control valve provided in the middle of each exhaust pipe. Since the film-forming type depends on the diffusion to the substrate S, the gas diffusion in the ± H direction and the ± L direction of the film-forming type near the substrate S is controlled by adjusting the balance of the exhaust flow of the plurality of exhaust pipes 64. More uniform film forming treatment can be performed.

  The ridge electrode facing distance adjusting mechanism 62 is the same as the ridge electrode facing distance adjusting mechanism 42 of the second embodiment, and includes a plurality of suspension members 43 that suspend the substrate side ridge electrode 21b, and these suspension members. A suspension frame member 44 that holds 43 from above, and a vertical slide mechanism (not shown) that moves the suspension frame member 44 up and down. The configuration of the slide adjusting portion 47 for enabling the substrate side ridge electrode 21b to move up and down is the same.

In the film forming apparatus 61, the operation of the vacuum pump of the gas exhaust means 9, the gas inside the discharge chamber 2, a pair of ridge electrodes 21a, passes between the 21b, the non-ridge portion waveguide 2 2a, 2 2b The air passes through the inside and passes through the waveguide partition meshes 65a and 65b, and is exhausted from the exhaust pipes 64a and 64b. At the same time, the mother gas is supplied between the pair of ridge electrodes 21a and 21b from the mother gas ejection hole 63b of the mother gas supply pipe 63a.

  According to this configuration, since the mother gas is uniformly supplied from a large area of the substantially entire surface of the exhaust-side ridge electrode 21a above the discharge chamber 2, it is suitable for making the plasma uniform. In addition, since exhaust is performed from both sides (± H direction) of the discharge chamber 2, the mother gas is less likely to stagnate inside the discharge chamber 2, the distribution of the mother gas is made uniform, and high-quality plasma processing is performed. By providing a control valve (throttle mechanism) in a part of the exhaust path from the exhaust pipes 64a and 64b to the exhaust means such as a vacuum pump to balance the exhaust amount over the entire surfaces in the ± H and ± L directions, The film thickness distribution to S can be adjusted optimally. Therefore, a high-quality film forming process suitable for the large-area substrate S can be performed.

[Fifth Embodiment]
Next, a fifth embodiment of the present invention will be described with reference to FIGS. FIG. 14 is a longitudinal sectional view showing a film forming apparatus 71 according to a fifth embodiment of the present invention, and FIG. 15 is a perspective view showing an example of the structure of a mother gas distribution unit 63 as mother gas supply means in the film forming apparatus 71. FIG. In FIG. 14, parts having the same configurations as those of the film forming apparatus 61 of the fourth embodiment shown in FIGS. 12 and 13 are not denoted by the same reference numerals, and the description thereof is omitted.

  In the film forming apparatus 71, the mother gas distribution means 63 is accommodated in the common space 12 d inside the heat absorption temperature control unit 12, as in the film forming apparatus 61 of the fourth embodiment. However, as shown in FIG. 15A, each mother gas ejection hole 63c has mother gas introduction guide means for conducting the mother gas without backflowing to the exhaust side ridge electrode 21a. Specifically, the mother gas introduction guide means is either a guide pipe 63e extending downward through the suction port 12f of the heat absorption temperature control unit 12, or a plurality of mother gas ejection holes as shown in FIG. A slit guide plate 63f that surrounds 63c is provided. Therefore, the space between the ridge electrodes 21a and 21b is not diffused by the mother gas ejected from the mother gas ejection hole 63c without being diffused in the suction hole 12f through which the vacuum exhaust gas passes or the vent hole 23a of the exhaust ridge electrode 21a. A uniform plasma distribution and uniform film-forming species are formed. On the other hand, the exhaust means is performed from the exhaust pipe 12e provided in the upper part of the heat absorption temperature control unit 12, like the film forming apparatuses 1, 41, 51 of the first to third embodiments.

According to this configuration, since higher-order silane gas components such as Si nanoclusters generated between the ridge electrodes 21a and 21b at the time of plasma generation can be quickly discharged from the film-forming atmosphere by making a U-turn in the flow direction as they are. High-performance and high-quality film formation mainly consisting of _three radicals can be obtained. Here, in the exhaust-side ridge electrode 21a, the hole portion for ejecting the mother gas from each gas ejection hole 63c substantially uniformly and the vent hole 23a for performing the vacuum exhaust by the exhaust means 9 are not necessarily the same. The holes may be provided by shifting the hole pitch so that uniform film formation can be performed on the substrate S. In this case, the mother gas ejected from each gas ejection hole 63c is reliably exhausted from the exhaust side ridge electrode 21a to one end, and then evacuated by the exhaust means 9 from the exhaust port 12e through the suction hole 12f through the suction hole 12f. Since the film forming conditions can be maintained and managed over the entire surface of the substrate S, it is more preferable.

  The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in each of the above embodiments, the example in which the present invention is applied to the film forming apparatuses 1, 41, 51, 61, 71 in which the discharge chamber (process chamber) 2 is installed horizontally has been described. The present invention can also be applied to a vertical film forming apparatus that is installed to be inclined in the vertical direction. In the case of installation with inclination, the substrate S is inclined by θ = 7 ° to 12 ° from the vertical direction so that the substrate is stably supported by the sin (θ) component of the substrate's own weight, and the gate valve at the time of substrate transfer The passage width and the installation floor area of the film forming apparatus can be reduced, which is preferable. Further, the present invention is not limited to a double ridge waveguide tubular film forming apparatus, but can be applied to a single ridge waveguide tubular film forming apparatus.

1, 41, 51, 61, 71 Film-forming equipment (vacuum processing equipment)
2 Discharge chambers 3A, 3B Converter 9 Exhaust means 10 Mother gas supply means 10a Mother gas supply pipe 10b Mother gas ejection hole 10c Guide plate 11 Soaking temperature controller 12 Heat absorption temperature controller 12c Plane section 12e Exhaust pipe (header section) )
12g temperature control medium flow path 14 volts (thermal expansion absorption means)
15 Nut (thermal expansion absorption means)
21a, 21b Ridge electrodes 22a, 22b Non-ridge portion waveguides 23a, 23b Vent holes 24a-24f Fastening member insertion holes (thermal expansion absorbing means)
25a-25f Fastening member insertion hole (thermal expansion absorbing means)
27 Suspension member 31a, 31b Ridge part
32a, 32b Non-ridge portion waveguides 42, 52, 62 Ridge electrode facing distance adjusting mechanism (ridge electrode facing distance adjusting means)
63e Guide pipe (mother gas introduction guide means)
63f Slit guide plate S Substrate

Claims (15)

A discharge chamber formed of a ridge waveguide formed in a flat plate shape and disposed opposite to each other in parallel, and having one and the other ridge electrodes between which plasma is generated;
Wherein disposed adjacent to both ends of the discharge chamber, of a non-ridge portion waveguide having a pair of ridge portions which are parallel to face each other, the high frequency power supplied from the high frequency power supply basic transmission of the rectangular waveguide A pair of converters that convert to mode and transmit to the discharge chamber to generate plasma between the one and the other ridge electrodes;
A substrate on which the plasma treatment is performed, set in parallel on the outer surface side of the other ridge electrode, is set, and a soaking temperature controller for controlling the temperature of the substrate;
A heat absorption temperature control unit installed on the outer surface side of the one ridge electrode and controlling the temperature of the one ridge electrode;
Exhaust means for discharging the gas inside the discharge chamber and the converter;
Mother gas supply means for supplying a mother gas necessary for performing plasma treatment to the substrate between the one and the other ridge electrodes;
A vacuum processing apparatus comprising:   The said heat absorption temperature control unit has a plane part which opposes said one ridge electrode, and is hold | maintained so that said one ridge electrode may closely_contact | adhere to this plane part. Vacuum processing equipment.   3. The vacuum processing apparatus according to claim 1, wherein the one and the other ridge electrodes are metal plates having a thickness of 0.5 mm or more and 3 mm or less.   The ridge electrode facing interval adjusting means for distributing the weight of the other ridge electrode and supporting the ridge electrode parallel and flat with respect to the one ridge electrode is further provided. Vacuum processing equipment.   The vacuum processing apparatus according to claim 4, wherein the ridge electrode facing distance adjusting unit is configured to suspend the other ridge electrode from above through a plurality of suspension members. The ridge electrode facing interval adjusting means is configured to keep the one ridge electrode and the other ridge electrode in parallel without changing the cross-sectional shape of the non-ridge portion waveguide of the discharge chamber. The vacuum processing apparatus according to claim 4 , wherein a distance between both ridge electrodes is adjustable.   The vacuum processing apparatus according to claim 1, further comprising thermal expansion absorbing means for absorbing thermal expansion of the one and the other ridge electrodes.   The thermal expansion absorbing means is provided on the one and the other ridge electrodes, a fastening member insertion hole for fastening and holding the ridge electrodes to the electrode holding portion, and a fastening member inserted through the fastening member insertion hole, The fastening member insertion hole has a long hole shape extending in the direction of thermal expansion of the ridge electrode with respect to the electrode holding portion, and the fastening force of the fastening member is determined when the ridge electrode is thermally expanded. The vacuum processing apparatus according to claim 7, wherein the vacuum processing apparatus is set to have a strength that allows relative movement between the ridge electrode and the electrode holding portion.   The one and the other ridge electrodes are provided with a plurality of vent holes, and the heat absorption temperature control unit is formed in a manifold shape communicating with the discharge chamber through the vent holes, and the heat absorption temperature control unit. A temperature adjusting medium flow passage through which the temperature adjusting medium flows inside the unit, and the exhaust means is connected to a header portion of the heat absorbing temperature adjusting unit, and the manifold is formed through the manifold shape of the heat absorbing temperature adjusting unit. The vacuum processing apparatus according to claim 1, wherein the gas inside the discharge chamber and the converter is exhausted.   The opening ratio of the vent per unit area in the one and the other ridge electrodes is greater in the position range farther from the mother gas supply means than in the position range closer to the mother gas supply means than the exhaust means. The vacuum processing apparatus according to claim 9, wherein the vacuum processing apparatus is high.   The mother gas supply means is housed in a non-ridge portion waveguide of the discharge chamber, and is disposed along the longitudinal direction of the inside of the waveguide, and the mother gas supply tube The vacuum processing apparatus according to claim 1, further comprising: a plurality of mother gas ejection holes for ejecting a mother gas between the first and the other ridge electrodes.   The mother gas supply means is housed inside the heat absorption temperature control unit, and the mother gas supply means includes a mother gas distribution unit stretched around the heat absorption temperature control unit, and a mother gas distribution unit. 12. A plurality of mother gas ejection holes for ejecting a mother gas between the one and the other ridge electrodes through the inside of the heat absorption temperature control unit. The vacuum processing apparatus as described in.   13. The mother gas injection hole is provided with mother gas introduction guide means for supplying the ejected mother gas to the space between the pair of ridge electrodes without diffusing the ejected mother gas at an early stage. Vacuum processing equipment.   The vacuum processing apparatus according to claim 1, wherein the exhaust unit is connected to at least one portion of the non-ridge waveguide of the discharge chamber.   The plasma processing method characterized by performing a plasma processing to a board | substrate using the vacuum processing apparatus in any one of Claims 1-14.

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