JP2000234173A - Plasma processing unit structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing unit structure which is capable of improving the film forming characteristic and the film thickness distribution. SOLUTION: A film forming unit structure to form a film on a surface of a substrate placed on a heater for forming the film through the decomposition and reaction of a reactive gas in a plasma atmosphere, comprises a box-like film forming unit cover 14 which is installed on a heater 11 for forming the film and opened on the substrate side, a plasma electrode 15 arranged in the film forming unit cover 14 so as to be opposite to a substrate 12, a gas feeder 16 which is arranged in the film forming unit cover 14, opposite to the substrate across the plasma electrode 15 and feeds the gas to the substrate 12, and a radius member 18 is fitted to a corner part of the film forming unit cover 14 (or the cover is tapered from the substrate side or adopting magnetic material layer for the cover inner wall or the cover is of double structure or the distance between the electrode and a deposition-preventive plate is appropriately set).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process for forming a film on a surface of a substrate mounted on a substrate heating heater by decomposing a reactive gas in a plasma atmosphere, such as a plasma CVD apparatus and a dry etching apparatus. The present invention relates to a plasma processing unit structure to be performed.

[0002]

2. Description of the Related Art Conventionally, as a structure of a plasma processing unit (hereinafter, referred to as a film forming unit) used in a plasma CVD apparatus, for example, the structure shown in FIGS. 1A and 1B is known. I have. Here, FIG. 1A is a perspective view of the structure, and FIG. 1B is a cross-sectional view along the vertical direction of FIG. 1A.

[0003] Reference numeral 1 in the figure denotes a substrate heater for mounting the substrate 6 (hereinafter, referred to as a film forming heater). A film forming unit structure 3 is installed on the substrate side of the film forming heater 1. This film forming unit structure 3
Is a box-shaped film forming unit cover 4 having an open substrate side,
For example, a ladder-type plasma electrode 7 disposed in the film forming unit cover 4 so as to face the substrate.
A gas supply device 8 disposed on the opposite side of the plasma electrode 7 from the substrate 6 and for sending gas to the substrate 6; a deposition preventing plate 9 disposed behind the gas supply device; And a mesh 5.

[0004] Here, the deposition-preventing plate is provided so that the gas supply from the gas supply device can be smoothly performed to the plasma electrode side. The exhaust meshes 5 are provided at openings formed at a plurality of locations (two in the drawing) in four directions (left and right, up and down directions) of the film forming unit cover 4 between the plasma electrode and the film forming heater 1. ing. Further, the exhaust mesh 5 is formed by punching with a mesh of about 10 to 50 mesh or a hole having the same size so that plasma energy generated in the film forming unit structure 3 does not leak out of the film forming unit structure 3. It is composed of metal.

In a plasma CVD apparatus using a film forming unit structure having such a structure, a reaction gas is decomposed and reacted by a plasma electrode, and the reaction gas is surrounded by a box-shaped film forming unit cover 4 to confine plasma. The film formation region is limited. The gas is deposited toward the substrate, but the gas contributing to the deposition is as small as several percent at most in a plasma CVD apparatus, for example, and most of the gas is exhausted from the deposition unit structure 3. The film forming unit structure 3
Is exhausted from an exhaust mesh 5 provided on the film forming unit cover 4.

[0006]

By the way, in the plasma CVD apparatus using the above-mentioned film-forming unit structure, since the film-forming unit structure 3 exists in the vacuum vessel, there is a gas flow, but it is not viscous. There is an intermediate flow situation that is affected by both flow effects and diffusion effects. For this reason, in the film-forming unit structure 2, gas stagnation areas and the like are generated due to the influence of the shape of the film-forming unit cover 4 and the deposition-preventing plate. It is easy to cause. Here, particles are tens of nanometers to several tens of nanometers in which a reaction gas decomposed and reacted by plasma is combined and multiplexed in a gas phase or on the surface of a structural material.
It is a solid particle having a diameter of 00 nm, and when it enters the film of the substrate, it may become a film defect or cause a trouble such as a decrease in evacuation due to blockage of the evacuation system. For this reason, in the film forming unit structure 3,
It is desired to improve the quality of film formation by reducing the number of particles as much as possible while at the same time performing a uniform film supply and exhaust from the gas supply device to the gas electrode smoothly and uniformly.

[0007] Further, local discharge is generated at gaps and corners of the film forming unit cover 4 to generate powder. Then, when the generated powder is discharged from the exhaust mesh 5 of the film forming unit cover 4, a vortex (arrow X) is formed at the corner, and the powder convects and adheres to the substrate.

The present invention has been made in view of such circumstances. First, by forming a curved surface (round) or a corner cut at a corner portion of a film forming unit cover, a gas supply from a gas supply unit is provided. Gas production and exhaust can be performed smoothly, and powder generation due to local discharge in gaps and corners of the film formation unit cover is suppressed, thereby improving the film thickness distribution of film formation on the substrate. It is an object to provide a membrane unit structure.

Secondly, the present invention provides a plasma processing unit cover in which the shape of the plasma processing unit cover is divergent from the gas supply side to the substrate side and has a quadrangular cross section cut in parallel to the main surface of the substrate. It is another object of the present invention to provide a film forming unit structure capable of performing a uniform film forming process on a substrate by supplying a uniform gas with a plasma electrode.

Third, according to the present invention, by forming a magnetic material layer on at least a part of the inner wall of the film forming unit cover, heat is generated by an eddy current due to the magnetic material layer and a hysteresis loop. It is an object of the present invention to provide a film forming unit structure that enables temperature heating without requiring special wiring, and further suppresses the growth of particles due to condensation of multiple radicals in the film forming unit cover.

Fourth, the present invention provides a double wall structure of the film forming unit cover to reduce the amount of heat radiated from the film forming unit cover, improve the temperature of the film forming unit cover, and improve the unit temperature. An object of the present invention is to provide a film forming unit structure capable of improving the temperature level of the entire structure and suppressing the condensation of multiple radicals in the film forming unit cover to grow into particles.

Fifth, according to the present invention, a deposition-preventing plate for smoothing the flow of gas from the gas supply device is disposed in the film forming unit cover behind the gas supply device, and the deposition-prevention plate and the plasma electrode are provided. Is set to 30 mm to 90 mm, the gas flow can be efficiently directed to the plasma electrode side, so that good film forming characteristics can be obtained and particles are generated in the film forming unit cover. An object is to provide a film forming unit structure that can be suppressed.

[0013]

Means for Solving the Problems A first invention of the present application is directed to a film forming unit structure for forming a film on a substrate surface mounted on a film forming heater by decomposing a reactive gas in a plasma atmosphere. A box-shaped film-forming unit cover having a substrate side opened, a plasma electrode disposed in the film-forming unit cover so as to face the substrate, and A gas supply device that is disposed on the opposite side of the substrate with the plasma electrode interposed therebetween and supplies a gas to the substrate, wherein a curvature (R) or a corner cut is provided at a corner of the film forming unit cover. A film forming unit structure characterized by the following.

The second invention of the present application is directed to a film forming unit structure for forming a film on a substrate surface mounted on a film forming heater by decomposing and reacting a reactive gas in a plasma atmosphere. An installed box-shaped film-forming unit cover having an opened substrate side, a plasma electrode disposed in the film-forming unit cover so as to face the substrate, and sandwiching the plasma electrode in the film-forming unit cover. A gas supply device that is arranged on the opposite side to the substrate and supplies a gas to the substrate, and the shape of the film forming unit cover is divergent from the gas supply device side to the substrate side and diverges from the substrate main surface. A film-forming unit structure characterized in that a cross section cut in parallel has a square shape.

According to a third aspect of the present invention, there is provided a film forming unit structure for forming a film on a surface of a substrate mounted on a film forming heater by decomposing and reacting a reactive gas in a plasma atmosphere. An installed box-shaped film-forming unit cover having an opened substrate side, a plasma electrode disposed in the film-forming unit cover so as to face the substrate, and sandwiching the plasma electrode in the film-forming unit cover. A gas supply device for supplying a gas to the substrate, the magnetic material layer being formed on at least a part of an inner wall of the film forming unit cover. It is a membrane unit structure.

According to a fourth aspect of the present invention, there is provided a film forming unit structure for performing a decomposition reaction of a reactive gas in a plasma atmosphere to form a film on a substrate surface mounted on the film forming heater. An installed box-shaped film-forming unit cover having an opened substrate side, a plasma electrode disposed in the film-forming unit cover so as to face the substrate, and sandwiching the plasma electrode in the film-forming unit cover. And a gas supply device arranged on the opposite side of the substrate to supply gas to the substrate, wherein the film forming unit cover has a double wall structure.

According to a fifth aspect of the present invention, there is provided a film forming unit structure for performing a decomposition reaction of a reactive gas in a plasma atmosphere to form a film on a substrate surface mounted on the film forming heater. An installed box-shaped film-forming unit cover having an opened substrate side, a plasma electrode disposed in the film-forming unit cover so as to face the substrate, and sandwiching the plasma electrode in the film-forming unit cover. A gas supply device arranged on the opposite side to the substrate, for supplying gas to the substrate, and a gas supply device disposed behind the gas supply device in the film forming unit cover to smoothly flow gas from the gas supply device. And a distance between the plasma electrode and the deposition prevention plate is 30 mm to 90 mm.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
In the first invention, the radius and the cut are provided with a radius (or cut) member inside the corner of the film-forming unit cover, or the curvature (round) or the corner cut is directly provided on the corner of the film-forming unit cover. It may be by attaching. 10R when attaching a radius by a radius member
It is preferable to add R of 30R or more. Also, the first
In the invention, it is preferable that a curved surface (round) or a cut is formed not only at the corner of the plasma processing unit cover but also at a corner of each side of the plasma processing unit cover. This makes the gas supply and exhaust from the gas supply device smoother and reduces the local discharge in the gaps and corners of the film forming unit cover as compared with the case where a curved surface or cut is provided only at the corner of the cover. The generation of powder based on the powder can be further suppressed.

In the second invention, the plasma processing unit cover has a rectangular cross section cut from the gas supply side to the substrate side and parallel to the substrate main surface. Is preferably inclined at an angle θ: 5 to 15 degrees (see FIG. 4) with respect to a line perpendicular to the main surface of the film forming heater. Here, if the angle is out of the above range, the gas in the cover cannot be flowed uniformly and efficiently.

In the third aspect of the present invention, the position of the magnetic material layer is adjusted so that the plasma density distribution at the plasma electrode does not deteriorate.
By optimizing the distance, the magnetic material layer may be disposed in a part of the film forming unit cover, or may be disposed in a portion to be heated of the film forming unit structure including the film forming unit cover. May be.

In the fourth aspect of the present invention, the double wall structure of the plasma processing unit cover may be a double wall structure for the cover itself, or a separate wall member may be appropriately attached to the cover to form a double wall structure. May be.

In the fifth invention, the distance between the plasma electrode and the deposition-preventing plate is set to 30 mm to 90 mm when the distance is 3 mm.
If the thickness is less than 0 mm, the film forming speed is considerably reduced, and if the thickness exceeds 90 mm, particles may increase rapidly. In the fifth invention, it is preferable that the attachment-preventing plate has a detachable support (see FIG. 12) attached to, for example, a film forming unit cover. Thereby, even if a slight thermal expansion occurs in the attachment-preventing plate, it can be absorbed by changing the mounting angle of the column.

[0023] It is preferable that the shield plate on which the support is locked is provided with a long hole along the x direction and the y direction of the main surface of the shield plate. This makes it possible for the struts to slide along the elongated holes in accordance with the elongation of the deposition-preventing plate. The support can slide freely without impairing the function of fixing

[0024]

Embodiments of the present invention will be described below with reference to the drawings. However, the materials, dimensions, and the like of the respective components described in the following examples are merely examples, and do not specify the scope of rights of the present invention. Embodiment 1 FIGS. 2A and 2B are referred to. here,
FIG. 2A is a development view of a film forming unit structure for a plasma CVD apparatus according to the first embodiment of the present invention, and FIG.
An explanatory view of a main part of (A) is shown. Reference numeral 11 in the drawing indicates a film forming heater on which the substrate 12 is mounted. A film forming unit structure 13 is provided on the substrate 12 side of the film forming heater 11. The film forming unit structure 13 includes a box-shaped film forming unit cover 14 having an opening on the substrate 12 side, a ladder-type plasma electrode 15 disposed in this film forming unit cover 14 in order from the substrate side, and a gas supply unit. It is composed of a vessel 16, a deposition-preventing plate 17, and an exhaust mesh (not shown).

The film-forming unit cover 14 is indicated by a dotted line for convenience, but its shape is the same as that of the above-described conventional film-forming unit cover (FIG. 1). However, the film-forming unit cover 14 of the first embodiment is provided at the corner formed by the film-forming unit cover 14 and the deposition-inhibiting plate 17 as shown in FIG.
As shown in FIG. 7, R (R) of 10R to 20R or more is provided by the rounding member 18. This rounded member may use a corner cut of about 10C to 20C. The gas supply unit 16 includes, for example, an upper header 20 connected to a gas supply pipe 19 and a gas supply pipe 19 in the case of using the gas pipe shown in FIG.
, And a plurality of gas pipes 22 arranged in parallel between the upper header 20 and the lower header 21 and connected to the headers 20 and 21. The deposition-preventing plate 17 is for assisting the gas from the gas supply 16 to be smoothly supplied to the substrate side.

Although not shown, the exhaust mesh is formed in the four directions of the film forming unit cover 14 between the vicinity of the plasma electrode 15 and the film forming heater 11 in the same manner as the above-described conventional exhaust mesh (FIG. 1). The openings are provided at a plurality of positions (two in the figure, two at a time) in the left-right direction and the up-down direction. In addition, the exhaust mesh 15 is provided with a mesh of about 10 to 50 mesh or a punched hole having the same size of holes so that plasma energy generated in the film forming unit structure 13 does not leak out of the film forming unit structure 13. It is composed of metal.

According to the first embodiment, the corner portion formed by the film forming unit cover 14 and the deposition preventing plate 17 is
10R to 3R by the rounding member 18 as shown in FIG.
Since the structure is provided with R (R) of 0R or more, the flow of gas in the film-forming unit cover 14 is improved and the film-forming speed is improved over the entire substrate surface, especially in the peripheral portion of the substrate, as compared with the related art. In addition, the film thickness distribution in the peripheral portion of the substrate can be improved to improve the film thickness distribution.

In fact, when the film forming characteristics when 30R was provided at the corner portion of the film forming unit cover 14 were examined, FIG.
The result shown in FIG. Here, the evaluation conditions are a SiNx film supplied at a reaction gas of SiH ₄ / NH ₃ / N ₂ = about 1: 1.7: 14 and a pressure of 1.0 Torr.
In FIG. 3, the left side (a) shows the comparison of the film forming speed depending on the presence or absence of the R in the corner portion, and the right side (b) shows the comparison of the film thickness distribution depending on the presence or absence of the R in the corner portion. As shown in FIG. 3, when 30R is provided at the corner of the film-forming unit cover 14, the average film-forming speed on the substrate surface is improved by 5 to 10%, and the film thickness around the substrate is improved, thereby improving the film thickness distribution. It was confirmed that.

In the first embodiment, the case where the radius R of 10R to 30R or more is provided by the rounding member 18 as shown in FIG. 2B is not limited thereto. The portion may be directly provided with a curvature or a corner cut.

(Embodiment 2) Referring to FIG. However, FIG.
And the same members are denoted by the same reference numerals and description thereof is omitted. Example 2
The film forming unit structure according to
Is characterized in that the cross section cut parallel to the main surface of the substrate is divergent (that is, the cross-sectional area gradually increases) from the gas supply device 16 side to the substrate 12 side, and has a rectangular shape. I do. Specifically, the inclined surface 23 a of the film forming unit cover 23 is inclined at an angle θ (5 to 15 degrees) with respect to a line L perpendicular to the main surface of the film forming heater 11. The number 24 in the drawing indicates an exhaust mesh.

According to the second embodiment having such a configuration, the shape of the film forming unit cover 23 is widened from the gas supply unit 16 side to the substrate 12 side, and the cross section cut parallel to the main surface of the substrate is square. With this configuration, the gas flow more uniformly and efficiently faces the plasma electrode 15,
The film forming speed and the substrate film thickness distribution can be improved.

In fact, the inclined surface 2 of the film forming unit cover 23
When the film forming characteristics when the inclination angle (θ diffusion angle) of 3a was 10 ° were examined, the results shown in FIG. 5 were obtained. Here, the evaluation condition is that the reaction gas SiH ₄ / NH ₃ / N ₂ =
It is a SiNx film supplied at about 1: 1.7: 14 and formed at a pressure of 1.0 Torr. In FIG. 5, the left side (a) shows a comparison of the film forming speed depending on the presence or absence of the inclination angle, and the right side (b) shows a comparison of the film thickness distribution depending on the presence or absence of the inclination angle. From FIG. 5, it was confirmed that the film forming speed was not improved much by attaching the inclined surface 23a to the film forming unit cover 23, but the film thickness distribution was improved.

Embodiment 3 The film forming unit structure according to Embodiment 3 is characterized in that a magnetic material layer is formed on at least a part of the inner wall of the film forming unit. The reason for providing the magnetic material layer is as follows.

In the film forming unit structure of FIG. 2 described above,
The gas uniformly discharged from the gas supplier 16 is decomposed and reacted by the plasma electrode 15 to form a film on the substrate 12. Here, since the radiant heat transfer mainly occupies the film-forming heater 11, the film-forming unit cover 14 that is less likely to receive the radiant heat due to the positional relationship with the heater 11 tends to have a low temperature in the film-forming unit structure 13. . Generally, the film forming unit cover has a temperature of 10 to 20 with respect to the temperature inside the normal film forming unit structure.
% Decrease in temperature, where multiple radicals formed in the plasma space are condensed to easily generate and grow particles. For example, in forming an amorphous silicon film,
SiH ₄ + SiH ₂ = Si ₂ H ₆ → 20 to 20 due to polymerization
Grow into 80 nm particles.

For this reason, it is desirable to heat the film-forming unit cover 14, for example, it is conceivable to heat it by installing a sheath heater or the like. However, it is necessary to use a special current introduction terminal in the vacuum chamber, and to consider that the current cable is not affected by the plasma in the vacuum. For these reasons, the present inventors have proposed dielectric heating utilizing the energy of plasma.

In an atmosphere in the presence of a high-frequency plasma,
When a magnetic material 33 such as iron as shown in FIG. 7B is placed under the condition that the high-frequency power supply 31 and the coil 32 are connected as shown in FIG. 7A, this magnetic material causes eddy current and hysteresis soup. (See FIG. 8). When an eddy current is generated, the following equation is established.

[0037]

(Equation 1)

With respect to the heat generated by the hysteresis loop, when a magnetic flux B exists inside a magnetic material, a magnetic field H corresponding to the magnetic flux B is generated (the magnetic flux B and the magnetic field H are one-to-one).
Corresponding). At this time, the area of the hysteresis loop is lost as heat. That is, heat generation (iron loss) = eddy current loss + hysteresis loss.

Therefore, in the third embodiment, the magnetic material layer is placed on the portion of the film forming unit cover 14 to be heated. This eliminates the need for special wiring,
This magnetic material layer can be heated, and the amount of generated particles can be reduced.

(Embodiment 4) Referring to FIG. However, FIG.
And the same members are denoted by the same reference numerals and description thereof is omitted. Example 4
Is characterized in that the film forming unit cover 41 has a double wall structure except for a film forming mesh portion. Example 3 above
As described above, in the film forming unit structure of FIG. 2, the gas uniformly discharged from the gas supply unit 16 is decomposed and reacted by the plasma electrode 15 to form a film on the substrate 12. Here, since the film-forming heater 11 mainly radiates heat,
The temperature of the film forming unit cover 14 that is less likely to receive radiant heat due to the positional relationship with the heater 11 tends to be low in the film forming unit structure 13. In general, the temperature of the film forming unit cover is reduced by about 10 to 20% with respect to the temperature inside the normal film forming unit structure. Here, multiple radicals formed in the plasma space are condensed to generate particles. Easy to grow. For example, in forming an amorphous silicon film, SiH
₄ + SiH ₂ = Si ₂ H ₆ → 20-80 n by polymerization
m particles.

In the fourth embodiment, as shown in FIG. 6, the film forming unit cover 41 has a double wall structure to reduce the amount of heat radiated from the film forming unit cover 41 to reduce the amount of heat radiated from the film forming unit cover 41. The temperature of 41 portions was improved, and the temperature level of the entire film forming unit structure 13 was improved. Therefore, it is possible to suppress the multi-radicals from condensing and growing into particles.

(Embodiment 5) Referring to FIG. However, FIG.
And the same members are denoted by the same reference numerals and description thereof is omitted. Example 5
Indicates that the distance (L) between the plasma electrode 15 and the deposition preventing plate 17 is 3
It is characterized in that it is 0 mm to 90 mm. FIG.
FIG. 4 is a characteristic diagram showing film forming characteristics when a distance L between a plasma electrode and a deposition-preventing plate is changed. Here, the evaluation conditions are a SiNx film supplied at a reaction gas of SiH ₄ / NH ₃ / N ₂ = about 1: 1.7: 14 and formed at a pressure of 1.0 Torr.
As is apparent from FIG. 10, when the distance L is reduced, the plasma energy in the plasma electrode starts to be transferred to the deposition-preventing plate 17 connected to the ground, so that the gas decomposition and reaction become insufficient and the film forming speed is reduced. Will be. In addition, the volume behind the plasma electrode is
When the distance L between the plasma electrode and the deposition-preventing plate is reduced as shown in FIG.
2, the film thickness distribution is deteriorated.

On the other hand, the film forming unit structure 13
Particles generated from inside degrade the quality of the film formation or accumulate inside and outside the film formation unit structure 13, and thus require a cleaning process by regular maintenance. To suppress the amount of generated particles, the film forming unit cover 1
It is effective to promote the gas exhaustion in 4 and exhaust it before growing into particles. However, the distance L is reduced as shown in FIG.
4 promotes gas exhaustion and reduces the amount of generated particles.

From FIG. 10, the following can be concluded.
That is, the position of the deposition-preventing plate 17 affects the film forming characteristics (film forming speed and film thickness distribution) and the amount of generated particles, but the effects tend to be contradictory. Therefore, by properly selecting the distance L between the plasma electrode 15 and the deposition-preventing plate 17, high-performance device characteristics can be obtained. In that sense, the distance L is 3
0 mm to 90 mm is a suitable range.

(Embodiment 6) Referring to FIG. However, the same members as those in FIG. 2 are denoted by the same reference numerals and description thereof is omitted. The sixth embodiment has been proposed under the following circumstances. That is, when the temperature of each component in the film forming unit structure shown in FIG. 2 was examined, the result shown in FIG. 11 was obtained. Heater set temperature (400 ° C and 35 in the figure)
0 ° C.), but the temperature of the deposition-preventing plate is as high as about 200 ° C. For this reason, in the film-forming unit structure intended for a large-area substrate, there is a concern that deformation in the film-forming unit structure 13 due to thermal expansion of the deposition-preventing plate 17. For example, when the length of the deposition-preventing plate is 500 mm, thermal expansion of 1.6 mm occurs.

Therefore, in the sixth embodiment, the deposition-preventing plate 17 is attached to the wall beam of the film forming unit support frame 40 by four columns (stays).
It was decided to be fixed via 51. Although not shown in FIG. 2, the film-forming unit support frame 40 is further back than the deposition-preventing plate 17 of the film-forming unit structure 13, and is a member for fixing and supporting the film-forming unit structure 13. is there. One end of the stay 51 is provided with
The other end was provided with a boss 53 having a stylus insertion hole in a part of the film forming unit support frame 40, and the boss 53 was fixed to the boss 53 with a set bolt 54. The number of stays is not limited to four, but may be five to eight.

According to the sixth embodiment, the fixing portion of the film-forming unit supporting frame 40 can be fixed to the boss 52 by the set bolt 53, so that the position of the deposition-inhibiting plate 17 can be changed freely. . Also, due to minute play due to the difference between the inner and outer diameters of the stay 51 at the boss portion, even if the deposition-preventing plate 17 undergoes some thermal expansion, the attachment angle of the stay 51 can be changed by itself and absorbed.

(Embodiment 7) Referring to FIG. However, the same members as those in FIGS. 2 and 12 are denoted by the same reference numerals, and description thereof is omitted. In the seventh embodiment, an improvement is made for a larger substrate or a high-temperature film forming process. That is, in the seventh embodiment, the horizontally long hole 55 and the vertically long hole 5 along the x-direction and the y-direction of the main surface of the deposition-preventing plate are provided in the deposition-preventing plate 17 to which the stay 51 is locked.
6 is provided, and the stay 51 is configured to be slidable along the horizontally long hole 55 and the vertically long hole 56 in accordance with the extension of the deposition prevention plate.

According to the seventh embodiment, a horizontally long hole 55 is provided along the x direction of the main surface of the deposition-preventing plate, and a vertically long hole 56 is provided along the y direction of the main surface of the deposition-preventing plate. Even when performing the high-temperature film forming process, the stay 51 can be slid freely without impairing the position fixing function against the thermal expansion of the deposition-preventing plate 17.

(Embodiment 8) Referring to FIG. However, the same members as those in FIG. Example 8
The film forming unit structure according to (1)
A bottom plate 61 with a radius is disposed along the corner of the cover 14 and the corner of each side inside the film forming unit cover 14 behind the gas supply unit 16; 11 is different from the film forming unit cover 14 in that a curved member 62 with a radius is disposed at an inner corner portion and a corner portion of each side.

According to the film forming unit structure according to the eighth embodiment, the gas supply from the gas supply unit 16 can be reduced compared to the first embodiment due to the presence of the bottom plate 61 with the radius and the curved member 62 with the radius. Exhaust can be achieved more smoothly,
The generation of powder due to local discharge in gaps and corners of the film forming unit cover 14 is further suppressed, whereby the film thickness distribution of the film formed on the substrate 12 can be further improved.

(Embodiment 9) Referring to FIG. However, the same members as those in FIGS. 2 and 14 are denoted by the same reference numerals, and description thereof will be omitted.
The film forming unit structure according to the ninth embodiment is different from the eighth embodiment in that, for example, the vertical and horizontal positions of the plasma processing unit cover 14 located near the end of the substrate 12 except for the bending member and the exhaust mesh. A gas discharge gap 71 for discharging gas after film formation is provided.

According to the film forming unit structure of the ninth embodiment, due to the presence of the bottom plate 61 with the radius and the gas discharge gap 71, the powder generated in the film forming unit cover 14 is not convected and the film is formed. Gas discharge gap 7 with later gas
1 can be discharged.

[0054]

As described above in detail, according to the present invention, firstly, by providing a structure in which the corner of the film forming unit cover is rounded, the gas supply and exhaust from the gas supply unit can be smoothly performed. While suppressing the generation of powder due to local discharge in the gaps and corners of the film forming unit cover,
Thus, a film forming unit structure capable of improving the film thickness distribution of the film formed on the substrate can be provided.

Secondly, according to the present invention, the film forming unit cover has a configuration in which the cross section cut in parallel from the gas supply device side to the substrate side and parallel to the main surface of the substrate is quadrangular. This can provide a film forming unit structure capable of performing a uniform film forming process on a substrate by supplying a uniform gas to the plasma electrode.

Third, according to the present invention, by forming a magnetic material layer on at least a part of the inner wall of the film forming unit cover, heat is generated by an eddy current and a hysteresis loop by the magnetic material layer. Thus, it is possible to provide a film-forming unit structure capable of heating at a temperature without requiring special wiring, and capable of reducing the amount of generated particles.

Fourth, according to the present invention, since the film forming unit cover has a double wall structure, the amount of heat radiated from the film forming unit cover is reduced, and the temperature of the film forming unit cover is improved. It is an object of the present invention to provide a film forming unit structure capable of improving the temperature level of the entire unit structure and thereby suppressing multi-radicals from condensing and growing into particles in the film forming unit cover.

Fifth, according to the present invention, a deposition-preventing plate for smoothing the flow of gas from the gas supplier is disposed behind the gas supplier in the film forming unit cover, and the deposition-preventing plate and the plasma electrode are provided. Is set to 30 mm to 90 mm, the gas flow can be efficiently directed to the plasma electrode side, so that good film forming characteristics can be obtained and particles are generated in the film forming unit cover. A film forming unit structure that can be suppressed can be provided.

If the attachment plate is attached via a detachable support, even if the attachment plate undergoes some thermal expansion, it can be absorbed by changing the attachment angle of the support. Furthermore,
X on the main surface of the deposition-preventing plate,
If a long hole is provided along each of the direction and the y direction, the strut can slide along the long hole in accordance with the extension of the deposition-preventing plate. Even when a large substrate is used or a high-temperature film forming process is performed. The support can be slid freely without being damaged by the thermal expansion of the attachment-preventing plate and impairing its position fixing function.

[Brief description of the drawings]

FIG. 1 is a perspective view of a conventional film forming unit structure.

FIG. 2 is an explanatory view of a film forming unit structure according to the first embodiment of the present invention.

FIG. 3 is a characteristic diagram showing film forming characteristics (film forming speed and film thickness distribution) when the film forming unit structure according to the first embodiment and a conventional film forming unit structure are used.

FIG. 4 is an explanatory view of a film forming unit structure according to a second embodiment of the present invention.

FIG. 5 is a characteristic diagram showing film forming characteristics (film forming speed, film thickness distribution) when a film forming unit structure according to a second embodiment and a conventional film forming unit structure are used.

FIG. 6 is an explanatory diagram of a film forming unit structure according to a fourth embodiment of the present invention.

FIG. 7 is an explanatory diagram of an eddy current caused by a magnetic material layer which is one component of a film forming unit structure according to a third embodiment of the present invention.

FIG. 8 is an explanatory diagram of a hysteresis loop formed by a magnetic material layer, which is one component of a film forming unit structure according to a third embodiment of the present invention.

FIG. 9 is an explanatory diagram of a film forming unit structure according to a fifth embodiment of the present invention.

FIG. 10 is a characteristic diagram showing a relationship among a film forming speed, a film thickness distribution, and the number of generated particles when the distance between the plasma electrode and the deposition preventing plate is changed in the film forming unit structure according to the fifth embodiment of the present invention. .

FIG. 11 is a temperature distribution diagram of the temperature of each component in the film forming unit structure of FIG. 2;

FIG. 12 is an explanatory diagram of a deposition preventing plate mounting structure in a film forming unit structure according to a sixth embodiment of the present invention.

FIG. 13 is an explanatory view of a deposition-proof plate mounting structure in a film forming unit structure according to a seventh embodiment of the present invention.

FIG. 14 is an explanatory diagram of a film forming unit structure according to Example 8 of the present invention.

FIG. 15 is an explanatory diagram of a film forming unit structure according to Embodiment 9 of the present invention.

[Explanation of symbols]

 11: film forming heater, 12: substrate, 13: film forming unit structure, 14, 23, 41: film forming unit cover, 15: plasma electrode, 16: gas supply device, 17: deposition prevention plate, 18: are Forming member, 20: upper header, 21: lower header, 22: gas pipe, 24: exhaust mesh, 40: support frame for film forming unit, 51: support (stay), 52: screw, 53: boss, 54: set Bolt, 55: Horizontal hole, 56: Vertical hole.

Continued on the front page (72) Inventor Yoshiichi Nawata 1-1, Akunoura-cho, Nagasaki-shi, Nagasaki Mitsubishi Heavy Industries, Ltd. Nagasaki Shipyard (72) Inventor Yasuhiro Yamauchi 1-1-1, Akunoura-cho, Nagasaki-shi, Nagasaki Mitsubishi Heavy Industries Inside Nagasaki Shipyard Co., Ltd. (72) Inventor Tatsufumi Aoi 1-1, Akunouramachi, Nagasaki City, Nagasaki Prefecture Mitsubishi Heavy Industries, Ltd. Nagasaki Shipyard Co., Ltd. F term (reference) 4K030 AA06 AA13 AA18 BA40 EA06 EA11 FA03 KA08 KA12 KA23 KA45

Claims (9)

[Claims] 1. A plasma processing unit structure for decomposing and reacting a reactive gas in a plasma atmosphere to perform plasma processing such as film formation on a surface of a substrate mounted on the substrate heating heater. A box-shaped plasma processing unit cover having an opened substrate side, a plasma electrode disposed in the plasma processing unit cover so as to face the substrate, and the plasma electrode sandwiched in the plasma processing unit cover. A plasma supply unit disposed on the opposite side of the substrate and supplying a gas to the substrate, wherein a curved portion or a corner cut is provided at a corner of the plasma processing unit cover. Unit structure. 2. The plasma processing unit structure according to claim 1, wherein a curved surface or a cut is formed not only at a corner of the plasma processing unit cover but also at a corner of each side of the plasma processing unit cover. body. 3. The plasma processing unit structure according to claim 1, wherein a gap for discharging a gas after film formation is provided in the plasma processing unit cover located near an end of the substrate. . 4. A plasma processing unit structure for decomposing and reacting a reactive gas in a plasma atmosphere to perform plasma processing such as film formation on a surface of a substrate mounted on the substrate heating heater, wherein the plasma processing unit is installed on the substrate heating heater. A box-shaped plasma processing unit cover having an opened substrate side, a plasma electrode disposed in the plasma processing unit cover so as to face the substrate, and the plasma electrode sandwiched in the plasma processing unit cover. A gas supply device that is disposed on the opposite side of the substrate and supplies a gas to the substrate, and the shape of the plasma processing unit cover is divergent from the gas supply device side to the substrate side and parallel to the substrate main surface. A plasma processing unit structure characterized in that the cross section cut into a rectangular shape is square. 5. A plasma processing unit structure for decomposing and reacting a reactive gas in a plasma atmosphere to perform plasma processing such as film formation on a surface of a substrate mounted on the substrate heating heater, wherein the plasma processing unit is installed on the substrate heating heater. A box-shaped plasma processing unit cover having an opened substrate side, a plasma electrode disposed in the plasma processing unit cover so as to face the substrate, and the plasma electrode sandwiched in the plasma processing unit cover. A plasma supply unit disposed on the opposite side of the substrate and supplying a gas to the substrate, wherein a magnetic material layer is formed on at least a part of an inner wall of the plasma processing unit cover. Structure. 6. A plasma processing unit structure for performing a process such as film formation on a surface of a substrate mounted on a substrate heating heater by causing a reactive gas to undergo a decomposition reaction in a plasma atmosphere, wherein the substrate is mounted on the substrate heating heater. Further, a box-shaped plasma processing unit cover having an open substrate side, a plasma electrode disposed in the plasma processing unit cover so as to face the substrate, and the plasma electrode sandwiched within the plasma processing unit cover. A plasma supply unit provided on a side opposite to the substrate and configured to supply a gas to the substrate, wherein the plasma processing unit cover has a double wall structure. 7. A plasma processing unit structure for decomposing and reacting a reactive gas in a plasma atmosphere to perform processing such as film formation on a surface of a substrate mounted on a substrate heating heater, wherein the plasma processing unit structure is installed on the substrate heating heater. Further, a box-shaped plasma processing unit cover having an open substrate side, a plasma electrode disposed in the plasma processing unit cover so as to face the substrate, and the plasma electrode sandwiched within the plasma processing unit cover. A gas supply device arranged on the opposite side of the substrate to supply gas to the substrate, and a gas supply device disposed in the plasma processing unit cover behind the gas supply device to prevent a gas flow from the gas supply device from flowing smoothly. A plasma processing unit comprising: a deposition plate; and a distance between the plasma electrode and the deposition prevention plate is 30 mm to 90 mm. Zotai. 8. The plasma processing unit structure according to claim 7, wherein the deposition-preventing plate is attached to the plasma processing unit cover via a detachable support. 9. The protection plate to which the support is locked is provided with elongated holes along the x-direction and the y-direction of the main surface of the protection plate, and the support is elongated in accordance with the extension of the protection plate. The plasma processing unit structure according to claim 8, wherein the structure is configured to be slidable along the hole.