KR102570370B1 - Inductive coupling antena and plasma processing apparatus - Google Patents

Abstract

An induction coupling antenna in the form of a rectangular frame having an opposite surface facing the loading surface, forming an induction electric field for generating the plasma in a processing container for plasma processing a rectangular substrate loaded on the loading surface of the loading table, A plane portion on which the four antenna wires are wound with the four antenna wires displaced by 90 °, and at each end of the antenna wire, around a winding axis that is parallel to the opposite surface and intersects the corner portion of the rectangular frame, the An inductively coupled antenna having a longitudinal winding portion that is wound in a longitudinal winding while forming a bottom planar portion sharing an opposing surface.

Description

Inductive coupling antenna and plasma processing device {INDUCTIVE COUPLING ANTENA AND PLASMA PROCESSING APPARATUS}

The present disclosure relates to an inductively coupled antenna and a plasma processing device.

Patent Literature 1 discloses an antenna unit configured such that a plurality of antenna wires are wound in the same plane so that the number of turns at the corner portions is greater than the number of turns at the center portion of the side so that the entirety is in a spiral wound shape.

Japanese Unexamined Patent Publication No. 2012-59762

The present disclosure provides an inductively coupled antenna and a plasma processing device that improve the uniformity of plasma density.

An inductively coupled antenna according to an aspect of the present disclosure forms an induction electric field for generating plasma in a processing container for plasma processing a rectangular substrate loaded on a loading surface of a mounting table, and has an opposite surface facing the loading surface. An inductively coupled antenna in the shape of a rectangular frame, a plane portion in which four antenna wires are wound by displaced by 90 ° on the opposing surface, and at each end of the antenna wire, parallel to the opposing surface and the rectangular frame around the winding shaft intersecting the corner portion of the vertical winding portion that is wound in a longitudinal winding while forming a flat bottom portion sharing the opposite surface.

According to the present disclosure, it is possible to provide an inductively coupled antenna and a plasma processing device that improve the uniformity of plasma density.

1 is a longitudinal sectional view showing an example of a substrate processing apparatus according to a first embodiment.
Fig. 2 is a plan view showing an example of arrangement of a metal window and a high-frequency antenna;
3 is a plan view of an example of an intermediate antenna;
4 is a perspective view of an example of an intermediate antenna;
5 is a plan view of another example of an intermediate antenna;
6 is a perspective view of another example of an intermediate antenna;
7 is a front view of another example of an intermediate antenna;
8 is a plan view of another example of an intermediate antenna;
9 is a perspective view of another example of an intermediate antenna;
Fig. 10 is a plan view of another example of an intermediate antenna;

Hereinafter, a gas supply method and a substrate processing apparatus (inductively coupled plasma apparatus) 10 according to an embodiment of the present disclosure will be described with reference to accompanying drawings. Note that in this specification and drawings, the same reference numerals are assigned to substantially the same components, and redundant descriptions are omitted in some cases.

[Substrate Processing Apparatus According to First Embodiment]

Referring to FIG. 1 , a substrate processing apparatus 10 according to a first embodiment of the present disclosure will be described. Here, FIG. 1 is a longitudinal sectional view showing an example of the substrate processing apparatus 10 according to the first embodiment.

The substrate processing apparatus 10 shown in FIG. 1 is for a flat panel display (Flat Panel Display, hereinafter referred to as "FPD") for a planar view rectangular substrate G (hereinafter simply referred to as "substrate"), It is an inductively coupled plasma (ICP) processing device that executes various substrate processing methods. As the material of the substrate G, glass is mainly used, and depending on the application, a transparent synthetic resin or the like may be used. Here, the substrate process includes an etching process, a film formation process using a CVD (Chemical Vapor Deposition) method, and the like. Examples of the FPD include a liquid crystal display (LCD), an electro luminescence (EL), and a plasma display panel (PDP). The substrate G includes a support substrate as well as a form in which a circuit is patterned on its surface. In addition, the plane dimension of the substrate for FPD is increasing in scale with the transition of the generation, and the plane dimension of the substrate G processed by the substrate processing apparatus 10 is, for example, about 1500 mm x 1800 mm of the sixth generation. From the size to the size of about 3000mm x 3400mm of the 10.5th generation, it includes at least. In addition, the thickness of the substrate G is about 0.2 mm to several mm.

The substrate processing apparatus 10 shown in FIG. 1 includes a processing container 20 in the shape of a rectangular parallelepiped box, and a substrate loading table 70 having a rectangular shape when viewed from a plane, on which a substrate G is loaded and placed in the processing container 20. ) and a control unit 90. Further, the processing container may have a shape such as a cylindrical box or an elliptical box. In this form, the substrate mounting table is also circular or elliptical, and the substrates placed on the substrate mounting table are also circular.

The processing container 20 is partitioned into two upper and lower spaces by the metal window 50, the antenna chamber A as the upper space is formed by the upper chamber 13, and the processing area S (processing chamber) as the lower space is formed by the upper chamber 13. It is formed by the lower chamber 17. In the processing container 20, a rectangular annular support frame 14 is disposed at a boundary between the upper chamber 13 and the lower chamber 17 so as to protrude from the inside of the processing container 20, A metal window 50 is installed in the support frame 14 .

The upper chamber 13 forming the antenna chamber A is formed by the side wall 11 and the top plate 12, and is made of metal such as aluminum or aluminum alloy as a whole.

The lower chamber 17 having the processing region S therein is formed by the side wall 15 and the bottom plate 16, and is made of metal such as aluminum or aluminum alloy as a whole. In addition, the side wall 15 is grounded by a ground wire 21 .

In addition, since the support frame 14 is made of metal such as conductive aluminum or aluminum alloy, it can also be referred to as a metal frame.

A rectangular annular (endless) seal groove 22 is formed at the upper end of the side wall 15 of the lower chamber 17, and a sealing member 23 such as an O-ring is fitted into the seal groove 22. , The sealing structure of the lower chamber 17 and the support frame 14 is formed by holding the sealing member 23 by the contact surface of the support frame 14.

On the side wall 15 of the lower chamber 17, a carry-in/out port 18 for carrying the substrate G into/out of the lower chamber 17 is opened, and the carry-in/out port 18 can be opened and closed by a gate valve 24. It is composed of Adjacent to the lower chamber 17 is a transport chamber (not shown) containing a transport mechanism, opening and closing of a gate valve 24 is controlled, and the substrate G is carried in and out through the transport port 18 in the transport mechanism. all.

In addition, a plurality of exhaust ports 19 are opened on the bottom plate 16 of the lower chamber 17, and a gas exhaust pipe 25 is connected to each exhaust port 19, and the gas exhaust pipe 25 has an on-off valve 26 It is connected to the exhaust system 27 via ). A gas exhaust portion 28 is formed by the gas exhaust pipe 25 , the on-off valve 26 and the exhaust device 27 . The exhaust device 27 has a vacuum pump such as a turbo molecular pump, and is configured to be capable of evacuating the inside of the lower chamber 17 to a predetermined vacuum level during the process. In addition, a pressure gauge (not shown) is installed at an appropriate location in the lower chamber 17, and monitor information by the pressure gauge is transmitted to the controller 90.

The substrate mounting table 70 has a substrate 73 and an electrostatic chuck 76 formed on an upper surface 73a of the substrate 73 .

The substrate 73 has a rectangular shape when viewed in plan, and has a planar dimension equivalent to that of the FPD mounted on the substrate mounting table 70 . For example, the substrate 73 has a planar dimension equivalent to that of the substrate G to be loaded, the length of the long side is about 1800 mm to 3400 mm, and the length of the short side can be set to about 1500 mm to 3000 mm. there is. With respect to this planar dimension, the thickness of the substrate 73 can be, for example, on the order of 50 mm to 100 mm.

The base material 73 is provided with a temperature control medium passage 72a meandering so as to cover the entire area of a rectangular plane, and is formed of stainless steel, aluminum, aluminum alloy, or the like. In addition, the substrate 73 may be formed of a laminated body of two members, an upper substrate and a lower substrate, instead of a single member as shown in the illustrated example. In that case, the temperature regulating medium flow path 72a may be provided in the lower substrate or may be provided in the upper substrate.

On the bottom plate 16 of the lower chamber 17, a box-shaped pedestal 78 formed of an insulating material and having a stepped portion inside is fixed, and a substrate mounting table 70 is placed on the stepped portion of the pedestal 78. is loaded

On the upper surface of the substrate 73, an electrostatic chuck 76 on which the substrate G is directly mounted is formed. The electrostatic chuck 76 includes a ceramic layer 74, which is a dielectric film formed by spraying ceramics such as alumina, and a conductive layer 75 (electrode) buried inside the ceramic layer 74 and having an electrostatic adsorption function. have

The conductive layer 75 is connected to a DC power supply 85 via a power supply line 84 . When a switch (not shown) intervening in the power supply line 84 is turned on by the controller 90, a DC voltage is applied from the DC power supply 85 to the conductive layer 75, whereby a Coulomb force is generated. By this Coulomb force, the substrate G is electrostatically attracted to the upper surface of the electrostatic chuck 76 and held therein while being placed on the upper surface of the substrate 73 .

The substrate 73 constituting the substrate mounting table 70 is provided with a temperature control medium passage 72a meandering so as to cover the entire area of a rectangular plane. At both ends of the temperature control medium flow path 72a, a transfer pipe 72b through which the temperature control medium is supplied to the temperature control medium flow path 72a, and a temperature control medium whose temperature has been raised or lowered by passing through the temperature control medium flow path 72a. The return pipe 72c through which is discharged communicates.

As shown in FIG. 1, the transfer flow path 87 and the return flow path 88 communicate with the transfer pipe 72b and the return line 72c, respectively, and the transfer flow path 87 and the return flow path 88 are It communicates with a temperature control means, for example, the chiller 86. The chiller 86 has a main body that controls the temperature of the temperature regulating medium and the discharge flow rate, and a pump that pressurizes the temperature regulating medium (both not shown). As the temperature regulating medium, a refrigerant is applied, for example, and Galden (registered trademark) or Fluorinert (registered trademark) is applied to this refrigerant. The temperature control device 89 is constituted by the transfer passage 87, the return passage 88, and the chiller 86.

A temperature sensor such as a thermocouple is disposed on the substrate 73, and monitor information by the temperature sensor is transmitted to the control unit 90 at any time. Then, based on the transmitted monitor information, temperature control of the substrate 73 and the substrate G is executed by the controller 90 . More specifically, the temperature and flow rate of the temperature control medium supplied from the chiller 86 to the transfer passage 87 are adjusted by the controller 90 . Then, temperature regulation control of the substrate mounting table 70 is executed by circulating the temperature regulation medium to which temperature regulation or flow rate regulation has been performed through the temperature regulation medium passage 72a. In addition, a temperature sensor such as a thermocouple may be disposed on the electrostatic chuck 76, for example.

A stepped portion is formed by the outer periphery of the electrostatic chuck 76 and the substrate 73 and the upper surface of the pedestal 78, and a rectangular frame-shaped focus ring 79 is mounted on the stepped portion. When the focus ring 79 is attached to the stepped portion, the upper surface of the focus ring 79 is set lower than the upper surface of the electrostatic chuck 76 . The focus ring 79 is made of ceramics such as alumina or quartz or the like.

A power supply member 80 is connected to the lower surface of the base material 73 . A power supply line 81 is connected to the lower end of the power supply member 80, and the power supply line 81 is connected to a high frequency power supply 83 serving as a bias power supply via a matching device 82 that performs impedance matching. By applying, for example, 3.2 MHz high-frequency power from the high-frequency power supply 83 to the substrate mounting table 70, an RF bias is generated and generated by the high-frequency power supply 59, which is a source source for plasma generation described below. Ions can be attracted to the substrate G. Therefore, in the plasma etching process, it becomes possible to increase both the etching rate and the etching selectivity. In this way, the substrate loading platform 70 forms a bias electrode for loading the substrate G and generating an RF bias. At this time, the site at which the ground potential is applied inside the chamber functions as an opposite electrode to the bias electrode, and constitutes a return circuit of high-frequency power. In addition, the metal window 50 may be configured as a part of a return circuit of high-frequency power.

The metal window 50 is formed by a plurality of divided metal windows 57 . The number of divided metal windows 57 forming the metal window 50 (6 are shown in the cross-sectional direction in FIG. 1) can be set to various numbers such as 12 or 24.

Each divided metal window 57 is insulated from the support frame 14 and adjacent divided metal windows 57 by an insulating member 56 . Here, the insulating member 56 is made of a fluororesin such as PTFE (Polytetrafluoroethylene).

The divided metal window 57 has a conductor plate 30 and a shower plate 40 . Both the conductor plate 30 and the shower plate 40 are made of aluminum, aluminum alloy, stainless steel, or the like, which is a non-magnetic, conductive, and corrosion-resistant metal or a metal with a corrosion-resistant surface treatment. Surface treatment having corrosion resistance is, for example, anodization, ceramic spraying, or the like. Further, the lower surface of the shower plate 40 facing the processing region S may be subjected to anodization or plasma-resistant coating by ceramic spraying. The conductor plate 30 may be grounded via a ground wire (not shown). The shower plate 40 and the conductor plate 30 are connected so as to conduct each other.

As shown in FIG. 1, a spacer (not shown) formed of an insulating member is disposed above each divided metal window 57, and is spaced apart from the conductor plate 30 by the spacer to form a high-frequency antenna. (54) is arranged. The high frequency antenna 54 is formed by winding and mounting an antenna wire formed of a metal having good conductivity such as copper in an annular or spiral winding shape. For example, multiple annular antenna wires may be arranged.

Further, a power feeding member 57a extending upward from the upper chamber 13 is connected to the high frequency antenna 54, and a power feeding line 57b is connected to the upper end of the power feeding member 57a. is connected to a high frequency power supply 59 via a matching device 58 that performs impedance matching. When high frequency power of, for example, 13.56 MHz is applied from the high frequency power supply 59 to the high frequency antenna 54, an induced current is induced in the split metal window 57, and the induced current induced in the split metal window 57 As a result, an induced electric field is formed in the lower chamber 17. By this induced electric field, the processing gas supplied from the shower plate 40 to the processing region S is converted into plasma to generate an inductively coupled plasma, and ions in the plasma are supplied to the substrate G. Further, control may be performed in which each divided metal window 57 has its own high-frequency antenna, and the high-frequency power is applied to each high-frequency antenna individually.

The high frequency power supply 59 is a source source for generating plasma, and the high frequency power supply 83 connected to the substrate mounting table 70 serves as a bias source for attracting generated ions and imparting kinetic energy. In this way, plasma is generated in the ion source source using inductive coupling, and the bias source, which is another power source, is connected to the substrate mounting table 70 to control the ion energy, so that the plasma generation and the control of the ion energy are independent. By doing so, the degree of freedom of the process can be increased. The frequency of the high frequency power output from the high frequency power supply 59 is preferably set within the range of 0.1 to 500 MHz.

The metal window 50 is formed by a plurality of divided metal windows 57, and each divided metal window 57 is formed by a plurality of suspenders (not shown) from the ceiling plate 12 of the upper chamber 13. It is suspended. Since the high frequency antenna 54 contributing to the generation of plasma is arranged on the upper surface of the split metal window 57, the high frequency antenna 54 is suspended from the ceiling plate 12 through the split metal window 57.

A gas diffusion groove 32 is formed on the lower surface of the conductor plate main body 31 forming the conductor plate 30 . Further, the gas diffusion grooves may be provided on the upper surface of the shower plate. In addition, the shape constituting the gas diffusion groove includes not only a concave shape formed in an elongated shape but also a concave shape formed in a planar shape.

In the shower plate main body 41 forming the shower plate 40, a plurality of gas discharge holes passing through the shower plate main body 41 and communicating with the gas diffusion grooves 32 of the conductor plate 30 and the processing region S. (42) is outlined.

As shown in Fig. 1, the gas inlet pipe 55 of each divided metal window 57 is integrated in one place in the antenna chamber A, and the gas inlet pipe 55 extending upward is the upper chamber. Airtightly penetrates the supply port 12a opened in the ceiling plate 12 of (13). The gas introduction pipe 55 is connected to the processing gas supply source 64 via a gas supply pipe 61 that is hermetically coupled.

An on-off valve 62 and a flow rate controller 63 such as a mass flow controller are interposed in the middle of the gas supply pipe 61. A gas supply device 60 is formed by the gas supply pipe 61 , the on-off valve 62 , the flow controller 63 and the processing gas supply source 64 . In addition, in order to supply gas to a plurality of regions within the processing region S, a gas supply pipe 61 is branched on the way, and an on-off valve, a flow controller, and a processing gas supply source corresponding to the type of processing gas communicate with each branch pipe. Yes (not shown).

In plasma processing, the process gas supplied from the gas supply device 60 passes through the gas supply pipe 61 and the gas inlet pipe 55, and the gas diffusion groove of the conductor plate 30 of each divided metal window 57 has. (32) is supplied. Then, gas is discharged from each gas diffusion groove 32 to the processing region S through the gas discharge hole 42 of each shower plate 40 .

Further, control may be performed in which each divided metal window 57 has its own high-frequency antenna, and the high-frequency power is applied to each high-frequency antenna individually.

The controller 90 is based on monitor information transmitted from each component of the substrate processing apparatus 10, for example, the chiller 86, the high-frequency power supplies 59 and 83, the gas supply device 60, and the pressure gauge. The operation of the gas exhaust unit 28 and the like is controlled. The control unit 90 has a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory). The CPU executes a predetermined process according to a recipe stored in RAM or a storage area of ROM. In the recipe, control information of the substrate processing apparatus 10 for process conditions is set. The control information includes, for example, gas flow rate, pressure inside the processing container 20, temperature inside the processing container 20, temperature of the substrate 73, process time, and the like.

The recipe and the program to be applied by the control unit 90 may be stored in, for example, a hard disk, a compact disk, a magneto-optical disk, or the like. Further, the recipe or the like may be stored in a portable, computer-readable storage medium such as a CD-ROM, DVD, or memory card, and set in the controller 90 and read. In addition, the control unit 90 includes an input device such as a keyboard or a mouse for performing command input operations, etc., a display device such as a display that visualizes and displays the operation status of the substrate processing apparatus 10, and an output device such as a printer. It has the same user interface.

FIG. 2 is a plan view showing an example of the arrangement of the metal window 50 and the high-frequency antenna 54. As shown in FIG. 2, the direction from the center to the outer periphery of the metal window 50 is referred to as the radial direction, and the direction along the outer periphery of the metal window 50 is referred to as the circumferential direction. 2, the shape and arrangement of the high-frequency antenna 54 are schematically shown, and are not limited to the shape and arrangement shown in FIG.

The metal window 50 is divided into a plurality of divided metal windows 57 with an insulating member 56 interposed therebetween. Specifically, the metal window 50 is divided into three in the radial direction. Further, the metal window 50 divided into three in the radial direction is divided into four, eight, and twelve in order from the center side in the circumferential direction.

In addition, the metal window 50 divided by the insulating member 56 includes a first dividing line 51 extending in a direction of 45° from the four corners of the metal window 50, and a short portion of the metal window 50. It has a second dividing line 52 parallel to the long side connecting the intersection of the two first dividing lines 51 intersecting the sides. Here, the length of the shorter side of the metal window 50 is referred to as W. The width in the radial direction of the triangular region surrounded by the shorter side of the metal window 50 and the two first dividing lines 51 is W/2. Further, the width in the radial direction of the trapezoidal region surrounded by the long side of the metal window 50 and the two first dividing lines 51 and the second dividing line 52 is W/2. With this configuration, in the triangular area and the trapezoidal area, the number of turns of the high-frequency antenna 54 is the same and the width in the radial direction is the same, so that the induced electric field is formed through the split metal window 57. The electric field strength of can be the same. In this way, uniform plasma can be formed.

Further, the metal window 50 divided by the insulating member 56 is divided into three parts on the outer circumferential side and two parts on the middle side in the circumferential direction of each side. With this configuration, the size of each divided metal window 57 can be reduced by increasing the number of divisions of the metal window 50, and the electric field intensity distribution of the induced electric field can be finely adjusted. Thereby, plasma distribution can be controlled with high precision.

The high frequency antenna (54) has an outer antenna (110), an intermediate antenna (120), and an inner antenna (130). These external antennas 110, intermediate antennas 120, and internal antennas 130 have planar regions that generate an induced electric field contributing to plasma generation, specifically, planar frame-phase regions 141, 142, 143) have. The framed regions 141, 142, and 143 are formed so as to face the conductor plate 30 and face the substrate G. Further, the frame regions 141, 142, and 143 are concentrically arranged, and constitute a rectangular plane corresponding to the rectangular substrate G as a whole.

In addition, the frame region 141 corresponding to the external antenna 110 is disposed on the outer peripheral side divided metal window 57 among the metal windows 50 divided into three radially. The framed region 142 corresponding to the intermediate antenna 120 is disposed on the middle divided metal window 57 among the three divided metal windows 50 in the radial direction. The framed region 143 corresponding to the inner antenna 130 is disposed on the center side divided metal window 57 among the metal windows 50 divided into three radially.

The outer antenna 110 is configured as, for example, a concentric planar antenna (shown concentrically for convenience in FIG. 2), for example, and the entire plane formed by each antenna facing the conductor plate 30 is liquid. It constitutes the associative region 141. 2, the shape of the external antenna 110 is not limited to this.

The intermediate antenna 120 is configured as a spiral-wound planar antenna, and the entire plane formed by each antenna facing the conductor plate 30 constitutes the frame-like region 142 . The intermediate antenna 120 may be configured as a multiplex (quadruple) antenna in which a plurality (eg, four) antenna wires made of a conductive material, such as copper, are wound so that the entire structure is twisted. The antenna wire arrangement area of the intermediate antenna 120 constitutes the framed area 142.

The inner antenna 130 is configured as a spiral-wound planar antenna, and the entire plane formed by each antenna facing the conductor plate 30 constitutes the frame-like region 143. The inner antenna 130 may be configured as a multiplex (double) antenna in which a plurality (eg, two) antenna wires made of a conductive material, such as copper, are wound so that the whole is twisted. In addition, the inner antenna 130 may be configured by winding one antenna wire in a spiral winding shape. The area where the antenna wire of the inner antenna 130 is arranged constitutes the framed area 143.

In addition, the high frequency antenna 54 is not limited to a configuration having three toroidal antennas (outer antenna 110, intermediate antenna 120, and inner antenna 130), and two or four or more toroidal antennas can be used. It may have a configuration. The external antenna 110 may also be a multi-segment toroidal antenna in which a plurality of antenna segments wound vertically around the plane of the conductor plate 30 are annularly arranged in a shape other than a spiral-wound planar antenna, for example. .

<middle antenna>

Next, an example of the intermediate antenna 120 will be further described using FIGS. 3 and 4 . 3 is a plan view of an example of an intermediate antenna 120 . 4 is a perspective view of an example of an intermediate antenna 120 .

As shown in Fig. 3, the intermediate antenna 120 constitutes a quadruple antenna in which the four antenna wires 121 to 124 are wound with the positions shifted by 90 degrees so that the entire structure becomes a spiral winding. In Fig. 3, one antenna line 121 among the four antenna lines 121 to 124 is marked with a halftone dot so that it can be easily identified from the other antenna lines 122 to 124. . In the following description, the long side direction of the intermediate antenna 120 is the X direction, the short side direction of the intermediate antenna 120 is the Y direction, and the height direction (vertical direction) of the intermediate antenna 120 is the Z direction. So, explain.

The antenna wire 121 includes a first corner portion 121a, a first side portion 121b, a second corner portion 121c, a second side portion 121d, a third corner portion 121e, and a connection portion 121f. I have it. The first edge portion 121b, the second corner portion 121c, the second edge portion 121d, and the third corner portion 121e are disposed on opposite surfaces facing the loading surface of the substrate mounting table 70, It forms the flat part of the intermediate antenna 120. At one end of the antenna wire 121, a connecting portion 121f is formed. The connecting portion 121f is connected to the high frequency power supply 59 via a power feeding member 57a (see Fig. 1). At the other end (end) of the antenna wire 121, a first corner portion 121a is formed as a longitudinal winding portion that is wound vertically. The other end of the antenna line 121 is connected to a ground potential (not shown).

Similarly, the antenna wire 122 has a first corner portion 122a, a first side portion 122b, a second corner portion 122c, a second side portion 122d, a third corner portion 122e, and a connection portion 122f. ) has The antenna wire 123 includes a first corner portion 123a, a first side portion 123b, a second corner portion 123c, a second side portion 123d, a third corner portion 123e, and a connection portion 123f. I have it. The antenna wire 124 includes a first corner portion 124a, a first side portion 124b, a second corner portion 124c, a second side portion 124d, a third corner portion 124e, and a connection portion 124f. I have it. The connection portions 122f to 124f are connected to the high frequency power supply 59 via a power supply member 57a (see Fig. 1). The other ends of the antenna lines 122 to 124 are connected to ground potential (not shown).

At the corners of the framed region 142 (see Fig. 2), first corner portions 121a to 124a are respectively disposed. Inside the first corner portion 121a of the antenna wire 121, the second corner portion 124c of the antenna wire 124 and the third corner portion 123e of the antenna wire 123 are disposed. Similarly, inside the first corner portion 122a of the antenna wire 122, the second corner portion 121c of the antenna wire 121 and the third corner portion 124e of the antenna wire 124 are disposed. Inside the first corner portion 123a of the antenna wire 123, the second corner portion 122c of the antenna wire 122 and the third corner portion 121e of the antenna wire 121 are disposed. Inside the first corner portion 124a of the antenna wire 124, the second corner portion 123c of the antenna wire 123 and the third corner portion 122e of the antenna wire 122 are disposed.

At the edge between the corner of the frame region 142 where the first corner portion 121a is disposed and the corner portion of the frame region 142 where the first corner portion 122a is disposed, the antenna wire 121 is The first side portion 121b and the second side portion 124d of the antenna line 124 are disposed. The first edge portion 121b and the second edge portion 124d forming the planar portion of the intermediate antenna 120 constitute a part (edge portion) of the frame region 142 generating an induced electric field contributing to the plasma.

The 1st edge part 121b has the straight part 121b1, the bent part 121b2, and the straight part 121b3. Further, the second side portion 124d includes a straight portion 124d1, a bent portion 124d2, and a straight portion 124d3. The straight line portion 121b1 and the straight line portion 124d1 are arranged at a predetermined interval. The straight portion 121b3 and the straight portion 124d3 are arranged with a predetermined interval therebetween. Further, the straight line portion 121b3 and the straight line portion 124d1 are arranged on the same line. Further, the bent portions 121b2 and 124d2 are provided in the central portion of the side of the frame region 142 .

Similarly, at the edge between the corner of the frame region 142 where the first corner portion 122a is disposed and the corner portion of the frame region 142 where the first corner portion 123a is disposed, the antenna wire 122 The first side portion 122b of ) and the second side portion 121d of the antenna line 121 are disposed. The first edge portion 122b and the second edge portion 121d forming the planar portion of the intermediate antenna 120 constitute a part (edge portion) of the frame region 142 generating an induced electric field contributing to the plasma. At the edge between the corner of the frame region 142 where the first corner portion 123a is disposed and the corner portion of the frame region 142 where the first corner portion 124a is disposed, the antenna wire 123 is The first side portion 123b and the second side portion 122d of the antenna line 122 are disposed. The first edge portion 123b and the second edge portion 122d forming the planar portion of the intermediate antenna 120 constitute a part (edge portion) of the frame region 142 generating an induced electric field contributing to the plasma. At the edge between the corner of the frame region 142 where the first corner portion 124a is disposed and the corner portion of the frame region 142 where the first corner portion 121a is disposed, the antenna wire 124 is The first side portion 124b and the second side portion 123d of the antenna line 123 are disposed. The first edge portion 124b and the second edge portion 123d forming the planar portion of the intermediate antenna 120 constitute a part (edge portion) of the frame region 142 generating an induced electric field contributing to the plasma. In addition, the 1st edge part 122b, 123b, 124b and the 2nd edge part 121d, 122d, 123d have the same bending part as the 1st edge part 121b and the 2nd edge part 124d, respectively.

As shown in FIG. 4, the first corner portion 121a of the antenna line 121 includes antenna lines 211 to 213, antenna lines 221 to 223, and antenna lines 231 to 232, It has antenna lines 241 to 242.

The first corner portion 121a of the antenna wire 121 is vertically wound in a spiral shape in which the vertical direction, which is a direction orthogonal to the surface of the substrate G (conductor plate 30), is the winding direction. It is comprised as a winding part. In addition, the winding axis of the first corner portion 121a is parallel to the opposite surface facing the loading surface of the substrate mounting table 70 and intersects the corner portion of the frame region 142 in plan view.

The antenna wires 211 to 213 are disposed on an opposite surface opposite to the loading surface of the substrate mounting table 70 . That is, the bottom plane portion 201 formed of the antenna wires 211 to 213 of the first corner portion 121a shares an opposing surface facing the loading surface. In addition, the antenna wires 211 to 213 of the first corner part 121a forming the bottom flat part 201 and the second corner part 124c of the antenna wire 124 forming the flat part of the middle antenna 120 ) and the third corner portion 123e of the antenna wire 123 constitute a part (corner portion) of the frame phase region 142 that generates an induced electric field contributing to the plasma. Further, the second corner portion 124c of the antenna wire 124 and the third corner portion 123e of the antenna wire 123 also share the opposite surface facing the mounting surface with the antenna wires 211 to 213. .

Specifically, the three antenna wires 211 to 213 are arranged on opposite surfaces and are formed in an L shape so as to form a corner portion. That is, the antenna wires 211 to 213 include a straight portion on one end side extending in the +Y direction (direction from one end toward the corner), a corner portion bent at 90°, and a +X direction (direction from the corner toward the other end). direction) has a straight line portion on the other end side extending in the direction. Further, the straight portions on one end side of the antenna wires 211 to 213 are arranged parallel to each other at a predetermined interval (the distance between the proximity surface of one antenna wire and the proximity surface of the other antenna wire) G1. Further, the straight portions on the other end side of the antenna wires 211 to 213 are arranged parallel to each other at a predetermined interval G1. In addition, as for the predetermined space|interval G1, 10 mm or more and 30 mm or less are suitable, for example. Thereby, abnormal discharge between the antenna wires can be prevented.

To the other ends of the antenna wires 211 to 213, antenna wires 221 to 223 extending in the +Z direction (direction away from the opposite surface) are respectively connected. Further, antenna wires 241 to 242 extending in the +Z direction (direction away from the opposing surface) are connected to one end of the antenna wires 212 to 213, respectively. The antenna wires 221 to 223 and the antenna wires 241 to 242 form two side parts that stand up and bend on both sides of the bottom flat part 201 . Further, the upper ends of the antenna wires 221 to 222 and the upper ends of the antenna wires 241 to 242 are connected by horizontally extending antenna wires 231 to 232, respectively. Top ends of the antenna lines 221 to 222 are connected to one end of the antenna lines 231 to 232, and top ends of the antenna lines 241 to 242 are connected to the other ends of the antenna lines 231 to 232. The antenna wires 231 to 232 form an upper surface portion of the first corner portion 121a. In addition, the upper surface portion of the first corner portion 121a formed of the antenna wires 231 to 232 is formed parallel to the opposing surface (bottom flat portion 201). Also, the antenna wire 223 is connected to a ground potential (not shown).

In the first corner portion 121a shown in FIGS. 3 and 4 , the antenna line 231 linearly couples the upper end of the antenna line 221 and the upper end of the antenna line 241 (extends obliquely). ) is formed. In addition, the antenna wire 232 is formed so that the upper end of the antenna wire 222 and the upper end of the antenna wire 242 are linearly coupled (obliquely extended).

In addition, the antenna wires 231 and 232 are formed by bending in an L shape to form a corner portion corresponding to the shape of the antenna wires 211 to 213, and the antenna wires 221 to 222 and the antenna wires 241 to 242 may be combined with That is, the antenna wire 231 has a straight portion on one end side extending in the -X direction (direction from one end of the antenna wire 231 toward the corner), a corner portion bent at 90°, and a -Y direction (from the corner portion). It has a straight portion on the other end side extending in the direction toward the other end of the antenna wire 231). The straight line portion on one end side of the antenna wire 231 is arranged so as to overlap with the straight line portion on the other end side of the antenna wire 211 in plan view. The straight portion on the other end side of the antenna wire 231 is arranged so as to overlap with the straight portion on the one end side of the antenna wire 212 in plan view. Similarly, the antenna line 232 may also be formed in an L shape so as to form a corner portion.

The second corner portion 124c of the antenna wire 124 is disposed inside the corner portion of the three antenna wires 211 to 213. The third corner portion 123e of the antenna wire 123 is disposed inside the corner portion of the three antenna wires 211 to 213 and the second corner portion 124c of the antenna wire 124 . In addition, the antenna wires 211 to 213, the second corner portion 124c, and the third corner portion 123e are arranged at equal intervals at a predetermined interval G1.

Also for the first corner portion 122a of the antenna wire 122, the first corner portion 123a of the antenna wire 123, and the first corner portion 124a of the antenna wire 124, It has the structure similar to the 1st corner part 121a.

With this configuration, the intermediate antenna 120 can increase the number of turns at the corner portions of the framed region 142 than the number of turns at the side center portion of the framed region 142 . Specifically, in the example of the intermediate antenna 120 shown in Figs. 3 and 4, the number of turns in the corner portion is 5, and the number of turns in the central portion of the side is set to 2. According to the intermediate antenna 120, the number of turns in the corner portion is greater than the number of turns in the center portion of the side, so that the induced electric field at the corner portion of the framed region 142 can be strengthened. This makes it possible to strengthen the plasma (higher the plasma density) with respect to the corner portion of the frame region 142 where the plasma tends to weaken (the plasma density is lowered). Therefore, the uniformity of the plasma density on the substrate G can be improved.

Also, although the number of antenna wires 211 to 213 disposed on the opposing surfaces of the first corner portions 121a to 124a has been described as three, the number is not limited to this. By changing the number of antenna wires disposed on the opposing surfaces of the first corner portions 121a to 124a, the generation of the electric field generated by the intermediate antenna 120 can be controlled.

Next, another example of the intermediate antenna 120A will be described using FIGS. 5 to 7 . 5 is a plan view of another example of the intermediate antenna 120A. 6 is a perspective view of another example of the intermediate antenna 120A. 7 is a front view of another example of the intermediate antenna 120A.

As shown in Fig. 5, in the antenna wire 121, the structures of the second corner portion 121c and the third corner portion 121e are different. The second corner portion 121c of the antenna wire 121 is turned around the outside in the first corner portion 122a of the antenna wire 122 . The third corner portion 121e of the antenna wire 121 is wound around the outside in the first corner portion 123a of the antenna wire 123 . The same applies to the antenna lines 122 to 124.

6, in the first corner portion 121a of the antenna line 121, the second corner portion 124c of the antenna line 124 and the third corner portion 123e of the antenna line 123 ) is wrapped around the outside.

The second corner portion 124c of the antenna wire 124 has a connecting portion 124c1, an outer winding portion 124c2, and a connecting portion 124c3.

The outer circumferential portion 124c2 is formed in an L shape so as to form a corner portion. That is, the outer circumferential portion 124c2 has a straight portion on one end side extending in the +Y direction, a corner portion bent at 90°, and a straight portion on the other end side extending in the +X direction. In addition, the outer circumferential portion 124c2 is arranged so as to overlap the corner portion of the antenna wire 213 in plan view. Further, as shown in Fig. 7, the outer winding part 124c2 is arranged with a gap of height H from the upper end of the antenna wire 213 to the lower end of the outer winding part 124c2 when viewed horizontally. Here, it is preferable that the height H be equal to or less than the predetermined interval G1 (H≤G1). Also, the height H is preferably equal to or greater than the interval at which abnormal discharge does not occur between the outer winding portion 124c2 and the antenna wire 213. By arranging the outer winding section 124c2 in this way, the induced electric field of the outer winding section 124c2 contributes to the generation of plasma.

The connecting portion 124c1 connects one end of the first side portion 124b and the other end of the outer peripheral portion 124c2. The connecting portion 124c1 includes, for example, a rising portion rising from one end of the first side portion 124b and an extending portion extending from the inside of the corner portion toward the outside and connecting to the other end of the outer circumferential portion 124c2. The connecting portion 124c3 connects the other end of the second edge portion 124d and one end of the outer peripheral portion 124c2. The connecting portion 124c3 has, for example, a standing portion that rises from the other end of the second edge portion 124d and an extending portion that extends from the inside of the corner portion toward the outside and connects to one end of the outer peripheral portion 124c2.

Similarly, the third corner portion 123e of the antenna wire 123 has a connecting portion 123e1, an outer winding portion 123e2, and a connecting portion 123e3. The outer circumferential portion 123e2 is arranged so as to overlap the corner portion of the antenna wire 212 in plan view.

With such a configuration, the intermediate antenna 120A can increase the number of turns at the corner portions of the framed region 142 than the number of turns at the side center portion of the framed region 142 . In addition, the intermediate antenna 120A includes the second corner portion 124c of the antenna wire 124, which is another antenna wire disposed at the first corner portion 121a, which is a vertical winding portion of the antenna wire 121, and the antenna wire 123. The third corner portion 123e of may be disposed on an outer portion of the corner portion. In this way, the induced electric field at the corner portion of the framed region 142 can be strengthened.

In addition, although the intermediate antenna 120A shown in FIGS. 5 and 6 has been described as going around the outside of two of the second corner portion 124c and the third corner portion 123e, it is not limited thereto, The configuration may be such that only one of the third corner portions 123e goes around outside. In this case, the outer circumferential portion 123e2 of the third corner portion 123e may be arranged so as to overlap the corner portion of the antenna wire 213 in plan view. Further, a structure in which three or more outer circumferences may be used. In addition, the number of turns on the outside is preferably half or less of the number of windings at the corners of the framed region 142.

Next, an example of another intermediate antenna 120B will be described using FIGS. 8 to 9. FIG. 8 is a plan view of another example of the intermediate antenna 120A. 9 is a perspective view of another example of the intermediate antenna 120A.

As shown in Fig. 8, in the antenna wire 121, the structures of the second corner portion 121c and the third corner portion 121e are different. In the first corner part 122a of the antenna wire 122, the second corner part 121c of the antenna wire 121 is wired obliquely inside the corner part so as to be cut. The third corner portion 121e of the antenna wire 121 is wired obliquely inside the corner portion so as to be short-cut in the first corner portion 123a of the antenna wire 123. The same applies to the antenna lines 122 to 124.

As shown in Fig. 9, in the first corner portion 121a of the antenna wire 121, the first antenna wire 123 that is the antenna wire (the antenna wire forming the bottom plane portion 201) on the opposing surface is 3 corner portion 123e, the second corner portion 124c of the antenna line 124, the third corner portion 123e of the antenna line 123, which is the inner antenna line among the antenna lines 211 to 213, and the antenna wire The second corner portion 124c of (124) is formed by being short-circuited straight without forming a corner portion. That is, the second corner portion 124c is formed by the end of the antenna wire (first edge portion 124b) disposed along one side of the framed region 142 and the other side of the framed region 142. The end of the antenna line (second side portion 124d) disposed along the portion is linearly shorted. Further, the third corner portion 123e includes an end portion of an antenna wire (second edge portion 123d) disposed along one side of the framed region 142 and the other side of the framed region 142. The end of the antenna line (connecting portion 123f) disposed along the portion is linearly shorted.

With this configuration, the intermediate antenna 120B can increase the number of turns at the corner portions of the framed region 142 than the number of turns at the side center portion of the framed region 142 . In this way, the induced electric field at the corner portion of the framed region 142 can be strengthened. In addition, the intermediate antenna 120B may assist in generating an electric field inside the corner portion.

In addition, the intermediate antenna 120B shown in FIGS. 8 and 9 has been described as having the third corner portion 123e and the second corner portion 124c short-circuited in a straight line, but is not limited thereto. . , a configuration in which only one of the third corner portions 123e is linearly short-circuited may be used. Moreover, the structure which short-circuits 3 or more may be sufficient.

In addition to the configurations in the above embodiments, other embodiments in which other components are combined or combined may be used, and the present disclosure is not limited to the configurations shown here at all. Regarding this point, it is possible to change it within the range which does not deviate from the meaning of this disclosure, and it can decide suitably according to the application form.

For example, the substrate processing apparatus 10 of FIG. 1 has been described as an inductively coupled plasma processing apparatus having a metal window 50 as a window member of the processing container 20, but is not limited thereto, and the window It may be an inductively coupled plasma processing device provided with a dielectric window as a member. Also, a plasma processing device of another form may be used.

10 is a plan view of an example of an intermediate antenna 120C. In the intermediate antennas 120 (120A, 120B) shown in FIG. 3 and the like, it has been explained that bent portions 121b2 and 124d2 of the antenna wire are provided at the center of the side of the frame region 142, but it is not limited thereto. As shown in FIG. 10 , the bent portions 121b2 and 124d2 may be provided near the corners of the framed region 142 .

In FIG. 2, it has been described as providing vertical winding portions 121a to 124a on the antenna wires 121 to 124 of the intermediate antenna 120, but it is not limited thereto. The inner antenna 130 may also be a quadruple antenna composed of antenna wires having vertical windings.

Claims (8)

An inductive coupling antenna of a rectangular frame shape, which forms an induction electric field for generating plasma in a processing container for plasma processing a rectangular substrate loaded on a loading surface of a mounting table, and has a surface facing the loading surface,
a plane portion in which the four antenna wires are wound by shifting the positions of the four antenna wires on the opposite surface by 90°;
At each end of the antenna wire, around a winding axis that is parallel to the opposing surface and intersects a corner portion of the rectangular frame, a longitudinal winding portion that is wound in a longitudinal winding while forming a flat bottom portion sharing the opposing surface, , an inductively coupled antenna. According to claim 1,
The vertical winding part,
Two side parts for standing and bending on both sides of the bottom flat part;
An inductively coupled antenna having an upper surface portion opposed to the bottom planar portion between the two side portions. According to claim 2,
In the upper surface portion,
The inductively coupled antenna, wherein the antenna line is linearly coupled between the antenna lines of the two side portions. According to claim 2,
In the upper surface portion,
The inductively coupled antenna, wherein the antenna wire is coupled by bending between the antenna wires of the two side portions corresponding to the shape of the bottom flat portion. According to any one of claims 1 to 4,
The other antenna wire disposed inside the corner portion of the bottom flat portion of one antenna wire,
An inductively coupled antenna having a laminated portion disposed spaced apart from an antenna wire constituting an outer side of a corner portion of the bottom flat portion. According to any one of claims 1 to 4,
The other antenna wire disposed inside the corner portion of the bottom flat portion of one antenna wire,
An inductively coupled antenna that linearly shorts an end of an antenna line disposed along one side of the rectangular frame and an end of the antenna line disposed along the other side of the rectangular frame. According to any one of claims 1 to 4,
The antenna line has a bent portion in the antenna line disposed along the edge of the rectangular frame, the inductively coupled antenna. a processing container for processing a rectangular substrate by plasma and having a window member thereon;
a loading platform having a loading surface for loading the rectangular substrate in the processing container;
A plasma processing device that forms an induction electric field for generating the plasma in the processing container and includes an inductively coupled antenna in the form of a rectangular frame having an opposite surface facing the loading surface,
The inductively coupled antenna,
a plane portion in which the four antenna wires are wound by shifting the positions of the four antenna wires on the opposite surface by 90°;
At each end of the antenna wire, around a winding axis that is parallel to the opposing surface and intersects a corner portion of the rectangular frame, a longitudinal winding portion that is wound in a longitudinal winding while forming a flat bottom portion sharing the opposing surface, , plasma processing unit.

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