JP6228400B2 - Inductively coupled plasma processing equipment - Google Patents

Description

  The present invention relates to an inductively coupled plasma processing apparatus.

  In a flat panel display (FPD) manufacturing process such as a liquid crystal display (LCD), there is a process of performing plasma processing such as plasma etching or film formation on a glass substrate, and plasma etching is performed in order to perform such plasma processing. Various plasma processing apparatuses such as an apparatus and a plasma CVD apparatus are used. Conventionally, a capacitively coupled plasma processing apparatus has been widely used as a plasma processing apparatus. Recently, however, an inductively coupled plasma (ICP) has a great advantage that a high-density plasma can be obtained at a high vacuum level. Processing devices are attracting attention.

  Recently, the size of the substrate to be processed has been increased. For example, in the case of a rectangular glass substrate for LCD, the length of short side × long side is changed from about 1500 mm × about 1800 mm to about 2200 mm × about 2400 mm. Furthermore, the size is remarkably increased to a size of about 2800 mm × about 3000 mm.

  Along with the increase in the size of the substrate to be processed, the rectangular dielectric window constituting the top wall of the inductively coupled plasma processing apparatus is also increased in size. However, dielectric materials such as quartz constituting the dielectric window are fragile and are not suitable for enlargement. For this reason, the rectangular dielectric window is made a metal window having higher rigidity than quartz, the rectangular metal window is divided, and the divided metal windows are insulated to form the top wall of the processing chamber. An inductively coupled plasma processing apparatus is described in Patent Document 1.

JP 2012-227427 A

  The inductively coupled plasma processing apparatus described in Patent Document 1 includes a metal support shelf provided around a rectangular metal window and a plurality of metal support beams provided between the metal support shelves. Patent Document 1 suspends divided pieces obtained by dividing a rectangular metal window into a plurality of parts in a region partitioned between a metal support shelf and a metal support beam and between the metal support beam and the metal support beam. It has a structure to do. That is, Patent Document 1 uses a metal support shelf and a metal support beam as a mounting portion on which the divided pieces are placed, and hangs a plurality of divided pieces so as to straddle the processing chamber.

  However, since Patent Document 1 uses a plurality of divided pieces as metal mounting shelves and a metal supporting beam as a mounting portion, a width for placing the divided pieces is particularly required on the metal supporting beam. .

  Further, the metal support beam is interposed between the processing chamber under reduced pressure and the antenna chamber under atmospheric pressure during processing. For this reason, the metal support beam is required to have high strength for supporting atmospheric pressure. Also from the viewpoint of strength, the width of the metal support beam in Patent Document 1 needs to be set wide.

  An induced electric field is difficult to form under a wide metal support beam. In particular, the metal support beam that divides the rectangular metal window along the circumferential direction is in parallel with the high-frequency antenna disposed in the antenna chamber. For this reason, a current in the direction opposite to the current flowing through the high-frequency antenna flows. It is a counter electromotive force. The current generated based on the counter electromotive force becomes more prominent as the width of the metal support beam becomes wider. When such a current becomes prominent, the induced electric field around the metal supporting beam as well as directly below the metal supporting beam is weakened. As a result, the uniformity of the induced electric field generated in the processing chamber may be reduced. When the uniformity of the induced electric field is lowered, the uniformity of the plasma generated inside the processing chamber is also affected.

  The area of the metal window is set according to the size of the object to be processed. However, as the width of the metal support beam increases, the ratio of the total area of the divided pieces to the total area of the metal window decreases. When this ratio decreases, it becomes difficult to efficiently generate an induced electric field inside the processing chamber.

  Further, when the divided piece also serves as a shower head for supplying the processing gas to the processing chamber, the ratio of the total area of the gas shower portion to the total area of the metal window decreases as the ratio decreases. For this reason, it becomes difficult to efficiently supply the processing gas and supply the processing gas with good uniformity.

  The present invention has been made in view of such circumstances, and provides an inductively coupled plasma processing apparatus capable of generating uniform plasma inside a processing chamber even when having a split-type metal window. This is the issue.

  Furthermore, even if it has a split type metal window, it is possible to generate a uniform plasma inside the processing chamber, and an efficient supply of the processing gas and a uniform processing gas can be generated. It is an object to provide an inductively coupled plasma processing apparatus that can be supplied.

In order to solve the above problems, according to one aspect of the present invention, an inductively coupled plasma processing apparatus that performs inductively coupled plasma processing on a rectangular object to be processed, the main body container, the main body container, and the target object to be processed. A rectangular shape having conductivity, which is divided into a processing chamber for storing inductively coupled plasma processing on the stored object to be processed and an antenna chamber for storing a high frequency antenna for generating inductively coupled plasma in the processing chamber. comprising a metal window, and the high frequency antenna is inside the antenna chamber, provided so as to surround the plane corresponding to the rectangular shape of the metal window, the rectangular metal window, the number of double It is divided into divided pieces, and the divided pieces are electrically insulated from each other by an insulating member that insulates the divided pieces. Yo It said antenna chamber is of et suspended from the top plate, between the divided piece and the suspension member, the insulating member of the insulating member integrally or separately to insulate the split pieces to each other is provided Te, An inductively coupled plasma processing apparatus is provided in which the suspension member is electrically insulated from the divided piece .

  In the inductively coupled plasma processing apparatus according to the above aspect, the rectangular metal window includes a first division that divides the rectangular metal window into two or more along a circumferential direction of the rectangular metal window; The metal window divided along the circumferential direction is divided into two or more along the direction intersecting the circumferential direction, and divided into the plurality of divided pieces; can do. In this case, the second division may include a division along a diagonal line from four corners of the rectangular metal window.

Further, in the direction in which the second division is performed, a conductive metal beam and the insulating member that insulates the divided pieces so as to insulate the metal beam and the divided pieces are interposed. , wherein the first direction division is made, it is not the metal beam it can only said insulating member for insulating the divided pieces to each other is to intervening structures.

The first split is made direction, and each of the second split was performed direction can be only the insulating member for insulating the divided pieces to each other is to intervening structures. At this time, the insulating member that insulates the divided pieces can be configured as one insulating member having a plurality of accommodating portions in which the divided pieces are accommodated.

The insulating member that insulates the divided pieces may have a structure that is placed on the divided pieces.

Also, in the prior SL suspending members, straddling the split pieces to each other adjacent, it may include those having a structure which is fastened to each of these divided pieces.

  Moreover, the reinforcement member which suppresses a deformation | transformation of the said top plate part may be provided in the outer side of the top plate part of the said antenna chamber. At this time, it is preferable that the reinforcing member has an arc shape that is convex outward from the top plate portion.

  It is preferable that the divided piece also serves as a gas shower head for supplying a processing gas to the processing chamber. In this case, the hanging member may also serve as a pipe for supplying the processing gas to the divided piece. Furthermore, it is preferable that the temperature of the divided pieces is controlled by a cold / hot water circulator. In this case, the suspension member may also serve as a pipe for circulating cold / hot water to the divided pieces by the cold / hot water circulator.

  ADVANTAGE OF THE INVENTION According to this invention, even if it has a division | segmentation type metal window, the inductively coupled plasma processing apparatus which can produce | generate a uniform plasma inside a processing chamber can be provided. In addition, even with a split-type metal window, it is possible to generate uniform plasma inside the processing chamber, and to supply processing gas efficiently and uniformly. It is also possible to provide an inductively coupled plasma processing apparatus.

1 is a longitudinal sectional view schematically showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention. It is a horizontal sectional view which follows the II-II line in FIG. It is a top view which shows an example of a high frequency antenna. It is a figure which shows the production | generation principle of inductively coupled plasma at the time of using a metal window. It is sectional drawing which shows an example of the hanging structure of a metal window. It is a top view which shows an example of the insulating member with which the inductively coupled plasma processing apparatus which concerns on the 1st Embodiment of this invention is provided. It is a longitudinal cross-sectional view which shows roughly the inductively coupled plasma processing apparatus which concerns on the 2nd Embodiment of this invention. It is a horizontal sectional view which follows the VIII-VIII line in FIG. It is a top view which shows an example of the insulating member used for the inductively coupled plasma processing apparatus of the 2nd Embodiment of this invention. It is a longitudinal cross-sectional view which shows roughly the inductively coupled plasma processing apparatus which concerns on the 3rd Embodiment of this invention. (A) The figure is a top view which shows an example of attachment of a reinforcement member, (B) The figure is a top view which shows the other example of attachment of a reinforcement member.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

<First Embodiment>
FIG. 1 is a longitudinal sectional view schematically showing an inductively coupled plasma processing apparatus according to the first embodiment of the present invention, and FIG. 2 is a horizontal sectional view taken along line II-II in FIG. The inductively coupled plasma processing apparatus shown in FIGS. 1 and 2 etches a metal film, an ITO film, an oxide film, or the like when forming a thin film transistor on a rectangular substrate, for example, an FPD glass substrate, an ashing process of a resist film, or the like It can be used for plasma processing. Here, as FPD, a liquid crystal display (LCD), an electroluminescence (Electro Luminescence; EL) display, a plasma display panel (PDP), etc. are illustrated. Moreover, it can use also for the plasma processing similar to the above with respect to the glass substrate for solar cell panels not only for the glass substrate for FPD.

  This plasma processing apparatus has a rectangular tube-shaped airtight main body container 1 made of a conductive material, for example, aluminum whose inner wall surface is anodized. The main body container 1 is assembled so as to be disassembled, and is electrically grounded by a ground wire 1a. The main body container 1 is vertically divided into an antenna chamber 3 and a processing chamber 4 by a rectangular metal window 2 formed to be insulated from the main body container 1. The metal window 2 constitutes the top wall of the processing chamber 4. The metal window 2 is made of, for example, a nonmagnetic and conductive metal such as aluminum or an alloy containing aluminum. Further, in order to improve the plasma resistance of the metal window 2, a dielectric film or a dielectric cover may be provided on the surface of the metal window 2 on the processing chamber 4 side. Examples of the dielectric film include an anodized film and a sprayed ceramic film. Examples of the dielectric cover include those made of quartz or ceramics.

  Between the side wall 3a of the antenna chamber 3 and the side wall 4a of the processing chamber 4, a metal frame 5 protruding inside the main body container 1 and a metal beam 6 formed diagonally inside the metal frame 5 are provided. It has been. The metal frame 5 and the metal beam 6 are made of a conductive material, preferably a metal such as aluminum.

  The rectangular metal window 2 of this example is divided into a plurality of divided pieces 2a to 2h, and these divided pieces 2a to 2h are respectively disposed inside the metal frame 5 and the metal beam 6 as shown in FIG. . In this example, for the rectangular metal window 2, the first division (arrow A) divided into two or more along the circumferential direction of the metal window 2, and the metal window 2 divided along the circumferential direction, A second division (arrow B) is further divided into two or more along the direction intersecting the circumferential direction, and is divided into a total of eight divided pieces 2a to 2h. The second division (arrow B) in this example includes divisions along the diagonal line from the four corners of the rectangular metal window 2. The divided pieces 2a to 2h thus divided are electrically insulated from the metal frame 5 and the metal beam 6 by the insulating member 7, and the divided pieces 2a to 2h are electrically insulated from each other by the insulating member 7. It has become so.

  The split pieces 2 a to 2 h of this example are arranged inside the metal frame 5 and the metal beam 6 without being spanned over the metal frame 5 and the metal beam 6. The insulating member 7 has a structure that is placed on each of the divided pieces 2a to 2h, the metal frame 5, and the metal beam 6. The support form of the divided pieces 2 a to 2 h in this example is a form in which the divided pieces 2 a to 2 h are suspended from the top plate portion 3 b of the antenna chamber 3 by the suspension member 8. The suspension member 8 of this example suspends the divided pieces 2a to 2h together with the insulating member 7 placed on each of the divided pieces 2a to 2h. Furthermore, the suspension member 8 of this example also suspends the metal frame 5 and the metal beam 6 together with the insulating members 7 mounted on the metal frame 5 and the metal beam 6 respectively. Further, the insulating member 7 of this example integrally insulates the suspension member 8 from the upper surface of the metal beam 6 and the upper surfaces of the divided pieces 2a to 2h, and the side surfaces of the metal beam 6 and the side surfaces of the divided pieces 2a to 2h. The insulating member 7 includes, for example, a portion that insulates the suspension member 8 from the upper surface of the metal beam 6 and the upper surfaces of the divided pieces 2a to 2h, a side surface of the metal beam 6, and the divided pieces 2a to 2h. It may be divided into a portion that insulates the side surface.

  Moreover, in this example, the division | segmentation pieces 2a-2h serve as the shower head for process gas supply. When the divided pieces 2a to 2h also serve as a shower head, a processing gas diffusion chamber 9 for diffusing a processing gas is formed inside each of the divided pieces 2a to 2h. A plurality of process gas discharge holes 9 a for ejecting process gas from the process gas diffusion chamber 9 to the process chamber 4 are formed on the lower surface of the divided pieces 2 a to 2 h facing the process chamber 4. The processing gas supply mechanism 10 supplies the processing gas to the processing gas diffusion chamber 9 formed inside each of the divided pieces 2a to 2h via the gas supply pipe 10a. The supplied processing gas is discharged from the processing gas diffusion chamber 9 toward the processing chamber 4 through the processing gas discharge hole 9a.

  A high frequency antenna 11 is disposed inside the antenna chamber 3 so as to face the divided pieces 2a to 2h. The high frequency antenna 11 is disposed, for example, separated from the divided pieces 2a to 2h via a spacer made of an insulating member (not shown). The high frequency antenna 11 is provided so as to circulate along the circumferential direction of the rectangular metal window 2 in a plane corresponding to the rectangular metal window 2 divided into the divided pieces 2a to 2h. As shown, it is formed in a spiral shape. The high-frequency antenna 11 shown in FIG. 3 is a multiplex (quadruple) in which four antenna wires 11a to 11d made of a conductive material, for example, copper or the like, are wound while shifting their positions by 90 ° to form a spiral shape as a whole. ) An example in which an antenna is configured, and the antenna wire arrangement area has a substantially frame shape. Note that the high-frequency antenna 11 is not limited to the multiple antenna shown in FIG. 3, and may be an annular antenna in which one or a plurality of antenna lines are annular. Moreover, the high-frequency antenna 11 of this example has a rectangular shape with a short side and a long side in cross section. The high-frequency antenna 11 is arranged so that the long side faces the divided pieces 2a to 2h (so-called horizontal placement), but may be arranged so that the short side faces the divided pieces 2a to 2h. (So-called vertical installation).

  A first high-frequency power source 13 is connected to the high-frequency antenna 11 via a matching unit 12. During the plasma processing, for example, high frequency power of 13.56 MHz is supplied to the high frequency antenna 11 from the first high frequency power supply 13 via the matching unit 12. Thereby, an eddy current is induced on the surface of each of the divided pieces 2a to 2h, and an induced electric field is formed in the processing chamber 4 by the eddy current. The processing gas discharged from the gas discharge holes 9a is turned into plasma inside the processing chamber 4 by an induction electric field.

  A rectangular glass substrate for FPD (hereinafter simply referred to as a substrate) G is placed under the processing chamber 4 as a substrate to be processed so as to face the high-frequency antenna 11 with the metal window 2 interposed therebetween. A mounting table 14 is provided. The mounting table 14 is made of a conductive material, for example, aluminum whose surface is anodized. The substrate G mounted on the mounting table 14 is attracted and held by an electrostatic chuck (not shown). The mounting table 14 is accommodated in the insulator frame 15. The insulator frame 15 is placed on the bottom of the main body container 1. The mounting table 14 may be provided at the bottom of the main body container 1 so as to be movable up and down. On the side wall 4 a of the processing chamber 4, a loading / unloading port 16 for loading / unloading the substrate G and a gate valve 17 for opening / closing the loading / unloading port 16 are provided.

  A second high-frequency power source 20 is connected to the mounting table 14 via a matching unit 19 by a feeder line 18. The second high frequency power supply 20 applies high frequency power for bias, for example, high frequency power having a frequency of 3.2 MHz to the mounting table 14 during the plasma processing. The ions in the plasma generated in the processing chamber 4 can be effectively drawn into the substrate G by the self-bias generated by the high-frequency power for bias. In order to control the temperature of the substrate G, a temperature control mechanism including a heating means such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor are provided in the mounting table 14 (both not shown). )

  An exhaust device 22 including a vacuum pump and the like is connected to the bottom of the processing chamber 4 through an exhaust port 21. The exhaust device 22 exhausts the inside of the processing chamber 4. Thereby, the inside of the processing chamber 4 is set and maintained in a predetermined vacuum atmosphere (for example, 1.33 Pa) during the plasma processing.

  A cooling space (not shown) is formed on the back side of the substrate G mounted on the mounting table 14, and a He gas flow path 23 for supplying He gas as a heat transfer gas having a constant pressure is formed. Is provided. By supplying the heat transfer gas to the back side of the substrate G in this way, it is possible to avoid a temperature rise or temperature change of the substrate G under vacuum.

  Each component of the plasma processing apparatus is connected to and controlled by a control unit 100 including a microprocessor (computer). Connected to the control unit 100 is a user interface 101 including a keyboard for performing an input operation such as command input for managing the plasma processing apparatus by an operator, a display for visualizing and displaying the operating status of the plasma processing apparatus, and the like. Has been. Further, the control unit 100 causes each component of the plasma processing apparatus to execute processing according to a control program for realizing various processings executed by the plasma processing apparatus under the control of the control unit 100 and processing conditions. A storage unit 102 that stores a program for processing, that is, a processing recipe, is connected. The processing recipe is stored in a storage medium in the storage unit 102. The storage medium may be a hard disk or semiconductor memory built in the computer, or may be portable such as a CDROM, DVD, or flash memory. Moreover, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example. Then, if desired, an arbitrary processing recipe is called from the storage unit 102 by an instruction from the user interface 101 and is executed by the control unit 100, so that the desired processing in the plasma processing apparatus is performed under the control of the control unit 100. Is performed.

(Metal window)
Next, the principle of generating inductively coupled plasma when a metal window is used will be described.
FIG. 4 is a diagram showing the principle of generation of inductively coupled plasma when a metal window is used.

As shown in FIG. 4, an induced current is generated on the upper surface (surface on the high frequency antenna side) of the metal window 2 from the high frequency current I _RF flowing through the high frequency antenna 11. The induced current flows only to the surface portion of the metal window 2 due to the skin effect, but since the metal window 2 is insulated from the metal frame 5, the metal beam 6, and the main body container 1, the planar shape of the high-frequency antenna 11 is linear. If so, the induced current that has flowed to the upper surface of the metal window 2 flows to the side surface of the metal window 2, and then the induced current that has flowed to the side surface flows to the lower surface (processing chamber side surface) of the metal window 2, The eddy current I _ED is generated again by returning to the upper surface of the metal window 2 through the side surface of the metal window 2. In this manner, an eddy current I _ED that loops from the upper surface (high frequency antenna side surface) to the lower surface (processing chamber side surface) is generated in the metal window 2. Of the eddy currents I _ED to this loop, the current flowing through the lower surface of the metal window 2 generates an induced electric field I _P in the processing chamber 4, the plasma of the processing gas is generated by the induction field I _P.

On the other hand, when the high-frequency antenna 11 is provided so as to circulate along the circumferential direction in a plane corresponding to the metal window 2, if a solid single plate is used as the metal window 2, The eddy current I _ED generated on the upper surface of 2 only loops on the upper surface of the metal window 2. Therefore, the eddy current I _ED does not flow on the lower surface of the metal window 2 and plasma is not generated. Therefore, the metal window 2 and insulated from each other as well as divided into divided pieces 2 a to 2 h, to flow eddy currents _{I ED} to each divided piece 2 a to 2 h. That is, by dividing the metal window 2 into a plurality of divided pieces 2a to 2h while being insulated from each other, an induced current that reaches the side surface flows on the upper surface of each of the divided pieces 2a to 2h, flows from the side surface to the lower surface, generating a loop of eddy currents I _ED back to the upper surface flowing side.

(Hanging structure)
Next, an example of the hanging structure of the metal window 2 will be described.
FIG. 5 is a sectional view showing an example of a hanging structure of a metal window. FIG. 5 shows a part of the structure for suspending the divided pieces 2a and 2b.

  As shown in FIG. 5, the insulating member 7 has a flange 31 that is placed on the split pieces 2 a and 2 b, the metal frame 5, and the metal beam 6. A seal member, for example, an O-ring 34 is annularly provided on the surface of the flange portion 31 that faces the divided pieces 2a and 2b. In addition, a seal member, for example, an O-ring 35 is provided in an annular shape on the surface of the flange portion 31 facing the metal frame 5 and the surface of the flange portion 31 facing the metal beam 6. The O-rings 34 and 35 maintain the airtightness between the antenna chamber 3 and the processing chamber 4.

  Between the flanges 31, wall portions 36 are provided that insulate the side surfaces of the divided pieces 2 a and 2 b and the side surfaces of the divided pieces 2 a and 2 b from the metal frame 5 and the metal beam 6. The space obtained between the wall portions 36 becomes an accommodating portion in which the divided pieces 2a and 2b are accommodated.

  The suspension member 8 is fastened to the insulating member 7 and the split pieces 2a and 2b with a fastening member such as a bolt 40 in a state where the split pieces 2a and 2b are stored in the storage portion. Thereby, the insulating member 7 and the divided pieces 2a and 2b are fastened to the suspension member 8. Further, the insulating member 7 and the divided pieces 2a and 2b fastened to the hanging member 8 are accommodated in a region partitioned by the metal frame 5 and the metal beam 6, and the hanging member 8 is inserted into the insulating member 7 and the metal frame. 5 and the metal beam 6 are fastened by fastening members, for example, bolts 42. Thereby, the metal frame 5 and the metal beam 6 are fastened to the suspension member 8. Then, the suspension member 8 fastened to the divided pieces 2 a and 2 b, the insulating member 7, the metal frame 5, and the metal beam 6 is fastened to the top plate portion 3 b of the antenna chamber 3 by fastening members, for example, bolts 43. In this manner, a structure in which the divided pieces 2a and 2b are suspended from the top plate portion 3b of the antenna chamber 3 by the suspension member 8 can be obtained. Further, as shown in FIG. 5, an insulator 44 is sandwiched between the bolts 40 and 42 and the metal frame 5, the metal beam 6, and the split pieces 2a and 2b, and the bolts 40 and 42 are connected to the metal frame 5 and the metal. You may make it insulate from the beam 6 and the division | segmentation piece 2a, 2b. In this example, four insulating members 7 shown in FIG. 5 are provided corresponding to four triangular regions 41 partitioned by the metal frame 5 and the metal beam 6, as shown in FIG. .

  Moreover, the suspension member 8 of this example has a structure that straddles the adjacent divided pieces 2a and 2b and is fastened to each of the divided pieces 2a and 2b. Of course, the suspension member 8 may have a structure that is fastened to only one of the divided piece 2a and the divided piece 2b. However, if the suspension member 8 is structured to be fastened to each of the adjacent divided pieces 2a and 2b and the adjacent divided pieces 2a and 2b share one hanging member 8, the suspension member 8 The advantage that the number can be reduced can be obtained.

(Processing operation)
Next, a processing operation when performing plasma processing, for example, plasma etching processing, on the substrate G using the inductively coupled plasma processing apparatus configured as described above will be described.

  First, after the gate valve 17 is opened, the substrate G is loaded into the processing chamber 4 from the loading / unloading port 16 by the transfer mechanism (not shown) and placed on the placement surface of the placement table 14. The substrate G is fixed on the mounting table 14 (not shown). Next, the processing gas supplied from the processing gas supply mechanism 10 into the processing chamber 4 is discharged into the processing chamber 4 from the gas discharge holes 9 a of the divided pieces 2 a to 2 h that also serve as a shower head, and exhausted by the exhaust device 22. By evacuating the inside of the processing chamber 4 through the port 21, the inside of the processing chamber is maintained in a pressure atmosphere of about 0.66 to 26.6 Pa, for example.

  At this time, He gas is supplied to the cooling space on the back side of the substrate G as a heat transfer gas via the He gas flow path 23 in order to avoid a temperature rise or temperature change of the substrate G.

  Next, a high frequency of 13.56 MHz, for example, is applied from the first high frequency power supply 13 to the high frequency antenna 11, thereby generating a uniform induction electric field in the processing chamber 4 through the metal window 2. Due to the induction electric field generated in this way, the processing gas is turned into plasma in the processing chamber 4 and high-density inductively coupled plasma is generated. By this plasma, for example, a plasma etching process is performed on the substrate G as a plasma process.

  According to the inductively coupled plasma processing apparatus according to the first embodiment, the divided pieces 2 a to 2 h are not placed on the metal frame 5 or the metal beam 6, and the top plate portion 3 b of the antenna chamber 3 is removed. The suspension member 8 is used for suspension. And the division pieces 2a-2h are the structures which support atmospheric pressure by suspending the division pieces 2a-2h from the top-plate part 3b. For this reason, the metal beam 6 does not need to be strong enough to support atmospheric pressure, and the width of the metal beam 6 is smaller than that of an inductively coupled plasma processing apparatus in which the segment is placed on a metal frame or metal beam. It can be set narrowly.

  As a result of being able to set the width of the metal beam 6 to be narrow, the area of the metal beam 6 that does not contribute to the formation of the induction electric field in the processing chamber 4 can be minimized and generated in the processing chamber 4. It is possible to improve the uniformity of the induced electric field. By improving the uniformity of the induction electric field, the uniformity of the plasma generated in the processing chamber 4 is improved, and the uniformity of the plasma processing is also improved.

  In addition, in an inductively coupled plasma processing apparatus of a type in which a segment is placed on a metal frame and a metal beam, the metal beam must be set for each segment. For this reason, there is a situation that the number of metal beams increases as the number of divisions increases. From such circumstances, the area of the metal beam that does not contribute to the formation of the induction electric field in the processing chamber 4 tends to increase.

  For such a situation, the inductively coupled plasma processing apparatus according to the first embodiment has a structure in which the divided pieces 2a to 2h are suspended from the top plate portion 3b, so that the metal beam 6 is divided into pieces 2a to 2a. The need to set every 2 h can be eliminated. That is, it is only necessary to insulate the divided pieces 2 a to 2 h with the insulating member 7. For this reason, even if the number of divisions increases, the number of the metal beams 6 can be reduced, and the divided pieces 2a to 2h that contribute to the formation of an induced electric field in the processing chamber 4 by the reduced number of the metal beams 6. The advantage of increasing the area of can also be obtained.

  Moreover, the metal beam which divides | segments a rectangular metal window along the circumferential direction is parallel to the high frequency antenna arrange | positioned in the antenna room. In such a metal beam, a current in the direction opposite to the current flowing in the high-frequency antenna flows. Such an electric current weakens not only directly under the metal beam but also an induced electric field around the metal beam.

  For a metal beam that divides such a rectangular metal window along the circumferential direction, the inductively coupled plasma processing according to the first embodiment that only requires the insulating pieces 7 to insulate the divided pieces 2a to 2h. The device can be eliminated as shown in FIG. In the inductively coupled plasma processing apparatus according to the first embodiment, only the metal beam 6 divided along the diagonal line exists in the region inside the metal frame 5. For this reason, there is no metal beam in which a current opposite to the current flowing in the high-frequency antenna flows, and there is an advantage that an induction electric field can be generated more efficiently and uniformly in the processing chamber 4. Can do.

  Moreover, in 1st Embodiment, the division | segmentation pieces 2a-2h serve as the gas shower head for process gas supply. It is not always necessary that the divided pieces 2a to 2h also serve as a gas shower head. However, in the first embodiment in which the area of the divided pieces 2a to 2h can be increased, if the divided pieces 2a to 2h also serve as a gas shower head, the total number of gas shower portions occupying the total area of the metal window 2 is increased. The ratio of the area can be increased, and an advantage that an efficient supply of the processing gas and a uniform supply of the processing gas can be realized.

  As described above, according to the first embodiment, it is possible to provide an inductively coupled plasma processing apparatus capable of generating uniform plasma inside the processing chamber 4 even when the divided type metal window 2 is provided. .

  Further, even if the divided type metal window 2 is provided, it is possible to generate a uniform plasma inside the processing chamber 4 and to efficiently supply the processing gas and to process the gas with good uniformity. Can be obtained.

<Second Embodiment>
FIG. 7 is a longitudinal sectional view schematically showing an inductively coupled plasma processing apparatus according to the second embodiment of the present invention, and FIG. 8 is a horizontal sectional view taken along line VIII-VIIIX in FIG. 7 and 8, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals, and only different parts will be described.

  As shown in FIGS. 7 and 8, the inductively coupled plasma processing apparatus according to the second embodiment differs from the inductively coupled plasma processing apparatus according to the first embodiment in that all the metal beams 6 are eliminated and the metal frame is removed. 5 only. All the split pieces 2 a to 2 h arranged inside the metal frame 5 are only insulated by the insulating member 7.

  FIG. 9 is a plan view showing an example of an insulating member provided in the inductively coupled plasma processing apparatus according to the second embodiment of the present invention.

  In the first embodiment, as shown in FIG. 6, the four insulating members 7 are provided so as to correspond to the four triangular regions 41 partitioned by the metal frame 5 and the metal beam 6. However, in the second embodiment, as shown in FIG. 9, it is only necessary to provide one insulating member 7 corresponding to one rectangular region 41 obtained inside the metal frame 5. For this reason, compared with 1st Embodiment, 2nd Embodiment can reduce the number of the insulating members 7, and obtains the advantage that the assembly property of an inductively coupled plasma processing apparatus becomes favorable, for example. Can do.

  Furthermore, when the size of the rectangular region obtained inside the metal frame 5 is the same as that of the first embodiment, the metal beam 6 is not present, and thus contributes to the formation of an induced electric field in the processing chamber 4. The area of the divided pieces 2a to 2h to be increased can be increased. For this reason, compared with the first embodiment, the uniformity of the induction electric field is further improved. Further, the uniformity of plasma generated in the processing chamber 4 is further improved, and the uniformity of the plasma processing is further improved.

  Also in the second embodiment, if the divided pieces 2a to 2h also serve as the gas shower head for supplying the processing gas, the total area of the gas shower portion increases, so that the processing gas can be supplied more efficiently, and A more uniform process gas can be supplied.

<Third Embodiment>
FIG. 10 is a longitudinal sectional view schematically showing an inductively coupled plasma processing apparatus according to the third embodiment of the present invention. 10, the same parts as those in FIG. 7 are denoted by the same reference numerals, and only different parts will be described.

  As shown in FIG. 10, the third embodiment is different from the second embodiment in that a reinforcing member 50 is provided outside the top plate portion 3 b of the antenna chamber 3. The reinforcing member 50 suppresses deformation of the top plate portion 3b. In this example, the reinforcing member 50 has an arcuate shape that protrudes outward from the top plate portion 3b. This shape is opposite to the shape that the top plate portion 3b is to deform. In this example, the arc-shaped reinforcing member 50 is connected to the top plate portion 3b by a support column 51 and has a so-called rib structure.

  FIG. 11A is a plan view showing an example of attachment of the reinforcing member, and FIG. 11B is a plan view showing another example of attachment of the reinforcing member.

  As shown in FIG. 11A, only one reinforcing member 50 may be provided so as to pass through the center of gravity of the top plate portion 3b, or a plurality of reinforcing members 50 may be provided as shown in FIG. You may make it provide.

  The processing chamber 4 of the inductively coupled plasma processing apparatus according to the embodiment of the present invention is in a reduced pressure environment during processing. For this reason, a force to push down toward the processing chamber 4 by the atmospheric pressure is applied to the divided pieces 2a to 2h. Moreover, the divided pieces 2a to 2h are suspended from the top plate portion 3b by the suspension member 8. For this reason, during the processing, the split pieces 2a to 2h pull the top plate portion 3b through the suspension member 8, and the top plate portion 3b is easily deformed.

  Such a situation can be solved by providing the reinforcing member 50 outside the top plate portion 3b. Moreover, since the deformation | transformation of the top-plate part 3b will be suppressed if the reinforcement member 50 is provided in the outer side of the top-plate part 3b, the division | segmentation piece 2a-2h suspended by the top-plate part 3b which is hard to deform | transform is also difficult to deform | transform. The advantage of becoming can be obtained.

  In addition, in FIG. 10, although the example which provided the reinforcement member 50 in the inductively coupled plasma processing apparatus which concerns on 2nd Embodiment was shown, the reinforcement member 50 which concerns on 3rd Embodiment is 1st Embodiment. Of course, the present invention can also be applied to such an inductively coupled plasma processing apparatus.

<Metal window division example>
In the horizontal sectional views shown in FIG. 2 and FIG. 8, an example of division of the metal window 2 is shown. The division examples shown in FIG. 2 and FIG. 8 are combinations of division along the direction intersecting the circumferential direction, for example, division along the diagonal line and division along the circumferential direction. The division along the circumferential direction divides the metal window 2 into a plurality of rings. In the division shown in FIGS. 2 and 8, the division along the circumferential direction is one round, so the metal window 2 is a two-ring type having an inner ring and an outer ring.

  The metal window 2 is not necessarily divided along the circumferential direction, and may be divided along the direction intersecting the circumferential direction, for example, only along the diagonal line. In this case, the metal window is a one-piece type.

As mentioned above, although this invention was demonstrated by embodiment, this invention can be variously deformed, without being limited to the said embodiment.
For example, although the spiral high-frequency antenna has been described as an example, the structure is not limited as long as the high-frequency antenna is provided so as to circulate along the circumferential direction of the metal window within a plane corresponding to the metal window.

  Moreover, you may make it the temperature control of the division | segmentation pieces 2a-2h of the metal window 2 by a cold / hot water circulator. In this case, a structure that allows cold / hot water to flow through the suspension member 8 may be used. In this way, the suspension member 8 is used as a member for suspending the split pieces 2a to 2h, and also used as a pipe for cold / hot water circulation to the split pieces 2a to 2h by the cold / hot water circulator. Therefore, the temperature control by the cold / hot water circulation of the divided pieces 2a to 2h can be realized with a simple configuration without separately providing piping for the purpose.

  Further, the divided pieces 2 a to 2 h in the above embodiment also serve as a gas shower head that supplies the processing gas to the processing chamber 4. In this case, the structure may be such that the processing gas can flow through the suspension member 8. Thus, you may make it use the suspension member 8 as piping for supplying process gas to a gas shower head (divided piece 2a-2h). Thereby, the supply of the processing gas from the divided pieces 2a to 2h to the processing chamber 4 can be realized with a simple configuration without separately providing piping for supplying the processing gas.

  In addition, the suspension member 8 is provided with both a structure that allows the cold / hot water to flow and a structure that allows the treatment gas to flow, and is used as a member that suspends the divided pieces 2a to 2h. It is also possible to double as pipes for supplying gas.

  In the above embodiment, the etching apparatus is illustrated as an example of the inductively coupled plasma processing apparatus. However, the present invention is not limited to the etching apparatus, and can be applied to the other plasma processing apparatus such as CVD film formation.

  Furthermore, although an example in which an FPD substrate is used as the substrate to be processed has been shown, a rectangular substrate can be applied to plasma processing for other substrates such as a substrate for a solar cell panel.

DESCRIPTION OF SYMBOLS 1; Main body container 2; Metal window 2a-2h; Division | segmentation piece 3; Antenna chamber 4; Processing chamber 5; Metal frame 6; Metal beam 7; Insulating member 8; Division along the direction B: Division along the direction intersecting the circumferential direction

Claims (14)

An inductively coupled plasma processing apparatus that performs inductively coupled plasma processing on a rectangular object to be processed,
A body container;
The main body container accommodates the object to be processed, a processing chamber for performing inductively coupled plasma processing on the accommodated object to be processed, and an antenna chamber for accommodating a high-frequency antenna for generating inductively coupled plasma in the processing chamber; A rectangular metal window having electrical conductivity partitioning into
The high-frequency antenna is provided inside the antenna chamber so as to circulate in a plane corresponding to the rectangular metal window,
The rectangular metal window is divided into divided pieces of multiple,
The divided pieces are electrically insulated from each other by an insulating member that insulates the divided pieces,
The divided pieces respectively, without being passed over to another member, et suspended from the top plate portion of said antenna chamber by the suspension member is,
An insulating member that is integral with or separate from the insulating member that insulates the divided pieces is provided between the hanging member and the divided piece, and the hanging member is electrically insulated from the divided piece. inductively coupled plasma processing apparatus characterized by being. The rectangular metal window is
A first division that divides the rectangular metal window into two or more along a circumferential direction of the rectangular metal window;
The metal window divided along the circumferential direction is divided into two or more along a direction intersecting the circumferential direction, and is divided into the plurality of divided pieces. The inductively coupled plasma processing apparatus according to claim 1.   The inductively coupled plasma processing apparatus according to claim 2, wherein the second division includes a division along a diagonal line from four corners of the rectangular metal window. In the direction in which the second division is performed, a conductive metal beam and the insulating member that insulates the divided pieces so as to insulate the metal beam and the divided pieces are interposed,
Wherein the first direction division is made, without the metal beam, inductively coupled plasma according to claim 2 or claim 3 only said insulating member for insulating the divided pieces to each other, characterized in that the intervening Processing equipment. The first split is made direction, and each direction in which the second split is made, according to claim 2 or claim 3 only said insulating member for insulating the divided pieces to each other, characterized in that the intervening The inductively coupled plasma processing apparatus according to 1. The inductively coupled plasma processing according to claim 5, wherein the insulating member that insulates the divided pieces is configured as a single insulating member having a plurality of accommodating portions in which the divided pieces are accommodated. apparatus. The inductively coupled plasma processing apparatus according to any one of claims 1 to 6, wherein the insulating member that insulates the divided pieces has a structure that is placed on the divided pieces. Said hanging member straddles the split pieces to each other adjacent, any one of claims 1 to 7, characterized in that include those having a structure which is fastened to each of these divided pieces The inductively coupled plasma processing apparatus according to 1. The inductively coupled plasma according to any one of claims 1 to 8 , wherein a reinforcing member that suppresses deformation of the top plate portion is provided outside the top plate portion of the antenna chamber. Processing equipment. The inductively coupled plasma processing apparatus according to claim 9 , wherein the reinforcing member has an arc shape that is convex outward from the top plate portion. The divided pieces, an inductively coupled plasma processing apparatus according to any one of claims 1 to 10, characterized in that also serves as a gas shower head for supplying a processing gas into the processing chamber. The inductively coupled plasma processing apparatus according to claim 11 , wherein the suspension member also serves as a pipe for supplying the processing gas to the divided pieces. The inductively coupled plasma processing apparatus according to any one of claims 1 to 12 , wherein the temperature of the divided piece is controlled by a cold / hot water circulator. The inductively coupled plasma processing apparatus according to claim 13 , wherein the suspension member also serves as a pipe for circulating cold / hot water to the divided pieces by the cold / hot water circulator.

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