JP2017017180A - Plasma processing apparatus and exhaust structure used therefor - Google Patents

Plasma processing apparatus and exhaust structure used therefor Download PDF

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JP2017017180A
JP2017017180A JP2015132475A JP2015132475A JP2017017180A JP 2017017180 A JP2017017180 A JP 2017017180A JP 2015132475 A JP2015132475 A JP 2015132475A JP 2015132475 A JP2015132475 A JP 2015132475A JP 2017017180 A JP2017017180 A JP 2017017180A
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baffle plate
opening baffle
exhaust
opening
plasma
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JP6548484B2 (en
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康史 宇津木
Yasufumi Utsugi
康史 宇津木
利洋 東条
Toshihiro Tojo
利洋 東条
山涌　純
Jun Yamawaki
山涌　　純
元毅 藤永
Mototake Fujinaga
元毅 藤永
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Tokyo Electron Ltd
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Priority to KR1020160083250A priority patent/KR101925972B1/en
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
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Abstract

PROBLEM TO BE SOLVED: To effectively prevent plasma from entering an exhaust part and a discharge from becoming unstable above a baffle plate when high-frequency high electric power is applied to a mount base.SOLUTION: A plasma processing device which performs plasma processing on a substrate G mounted on a mount surface of a mount base 23 in a processing chamber 4 while applying a high-frequency bias to the mount base 23 has a first opening baffle plate 34 and a second opening baffle plate 35 provided at an exhaust port 30. The first opening baffle plate 34 is provided on an exhaust path downstream side, and the second opening baffle plate 35 is provided on an exhaust path upstream side; and the first opening baffle plate 34 is grounded, and the second opening baffle plate 35 is in an electrical floating state, the first and second opening baffle plates 34 and 35 being provided at such an interval that a stable discharge can be generated therebetween.SELECTED DRAWING: Figure 3

Description

本発明は、基板に対してプラズマ処理を行うプラズマ処理装置およびそれに用いる排気構造に関する。   The present invention relates to a plasma processing apparatus for performing plasma processing on a substrate and an exhaust structure used therefor.

半導体デバイスやフラットパネルディスプレイ（ＦＰＤ）の製造工程においては、基板に対しプラズマエッチングや成膜処理等のプラズマ処理を行う工程が存在する。   In a manufacturing process of a semiconductor device or a flat panel display (FPD), there is a process of performing plasma processing such as plasma etching or film formation on a substrate.

このようなプラズマ処理には、プラズマエッチング装置やプラズマＣＶＤ成膜装置等の種々のプラズマ処理装置が用いられる。プラズマ処理装置でプラズマ処理を行う際には、真空に保持される処理室内に設けられた載置台上に基板を載置した状態で、処理室内に所定のガスのプラズマを生成し、基板に対してプラズマ処理を施す。   Various plasma processing apparatuses such as a plasma etching apparatus and a plasma CVD film forming apparatus are used for such plasma processing. When performing plasma processing with a plasma processing apparatus, a plasma of a predetermined gas is generated in the processing chamber in a state where the substrate is mounted on a mounting table provided in a processing chamber held in a vacuum, Apply plasma treatment.

プラズマ処理装置においては、処理室内の処理領域で生成された異物やプラズマが排気領域に侵入することを防止するために、メッシュ構造やスリット構造等の開口部を形成して通気性を確保した構造のバッフル板を設けることが一般的に行われている（例えば特許文献１）。   In the plasma processing apparatus, in order to prevent foreign matter and plasma generated in the processing region in the processing chamber from entering the exhaust region, a structure with a mesh structure, a slit structure, etc. to ensure air permeability The baffle plate is generally provided (for example, Patent Document 1).

また、特許文献１では開口部を有するバッフル板を電気的にフローティング状態で設けているが、特許文献２には、このようなバッフル板を接地することが開示されている。   In Patent Document 1, a baffle plate having an opening is provided in an electrically floating state. However, Patent Document 2 discloses grounding such a baffle plate.

特開平６−２５２２４５号公報JP-A-6-252245 特開２０１０−２３８９８０号公報JP 2010-238980 A

ところで、このようなプラズマ処理装置では、プラズマ中のイオンを効果的に引き込むために、載置台に高周波バイアスを印加する場合がある。大型基板のプラズマ処理においては、このような高周波バイアスを高パワーにする必要がある。   By the way, in such a plasma processing apparatus, in order to draw ions in plasma effectively, a high frequency bias may be applied to the mounting table. In plasma processing of a large substrate, it is necessary to make such a high frequency bias high power.

このように載置台に高周波バイアスを印加すると、排気口が対向電極となり、排気口部分に容量結合プラズマが発生する。   When a high frequency bias is applied to the mounting table in this manner, the exhaust port becomes a counter electrode, and capacitively coupled plasma is generated at the exhaust port portion.

バッフル板が電気的にフローティング状態の場合には、このプラズマが失活しないため、プラズマが排気部に入り込んで、圧力制御バルブ（ＡＰＣ）や真空ポンプの入り口部分に局所的なグロー放電が生じて部材が消耗してしまう。   When the baffle plate is in an electrically floating state, this plasma is not deactivated, so that the plasma enters the exhaust section and local glow discharge occurs at the inlet of the pressure control valve (APC) or vacuum pump. The member is consumed.

一方、バッフル板が接地されている場合には、プラズマがバッフル板で失活するため、排気部での放電は抑制される。しかし、接地されたバッフル板上でグロー放電が発生して動き回り、排気空間の放電が不安定になってしまう。   On the other hand, when the baffle plate is grounded, the plasma is deactivated by the baffle plate, so that discharge in the exhaust section is suppressed. However, glow discharge is generated and moved around on the grounded baffle plate, and the discharge of the exhaust space becomes unstable.

したがって、本発明は、載置台に高パワーの高周波電力を印加する場合に、排気部へのプラズマ浸入すること、およびバッフル板の上方で放電が不安定になることを効果的に防止することができるプラズマ処理装置、およびそのようなプラズマ処理装置に用いられる排気構造を提供することを課題とする。   Therefore, the present invention can effectively prevent plasma intrusion into the exhaust section and unstable discharge above the baffle plate when high power high frequency power is applied to the mounting table. It is an object of the present invention to provide a plasma processing apparatus that can be used and an exhaust structure used for such a plasma processing apparatus.

上記課題を解決するため、本発明の第１の観点は、基板を収容してプラズマ処理を施す処理室と、前記処理室内で基板が載置される載置面を有する載置台と、前記処理室内に処理ガスを供給する処理ガス供給系と、前記処理室内を排気する排気部と、前記載置台に載置された基板に対してプラズマ処理を行うためのプラズマを生成するプラズマ生成機構と、前記載置台にバイアス用の高周波電力を印加するための高周波電源と、前記処理室から前記排気部へ至る排気口部分またはその近傍に設けられた、複数の開口を有する第１の開口バッフル板および第２の開口バッフル板とを有し、前記第１の開口バッフル板は排気経路の下流側、前記第２の開口バッフル板は排気経路の上流側に設けられ、前記第１の開口バッフル板および前記第２の開口バッフル板はいずれも導電性材料からなり、前記第１の開口バッフル板は接地され、前記第２の開口バッフル板は電気的にフローティング状態であり、前記第１の開口バッフル板および前記第２の開口バッフル板は、これらの間に安定放電が生成可能な間隔で設けられていることを特徴とするプラズマ処理装置を提供する。   In order to solve the above problems, a first aspect of the present invention is to provide a processing chamber that accommodates a substrate and performs plasma processing, a mounting table having a mounting surface on which the substrate is mounted in the processing chamber, and the processing A processing gas supply system for supplying a processing gas into the chamber, an exhaust section for exhausting the processing chamber, a plasma generation mechanism for generating plasma for performing plasma processing on the substrate placed on the mounting table, A high-frequency power source for applying high-frequency power for bias to the mounting table, a first opening baffle plate having a plurality of openings provided in or near an exhaust port portion extending from the processing chamber to the exhaust unit; A second opening baffle plate, wherein the first opening baffle plate is provided downstream of the exhaust path, and the second opening baffle plate is provided upstream of the exhaust path, and the first opening baffle plate and Said second opening Each of the baffle plates is made of a conductive material, the first opening baffle plate is grounded, the second opening baffle plate is in an electrically floating state, the first opening baffle plate and the second opening baffle plate The opening baffle plate is provided with an interval between them so that a stable discharge can be generated.

また、本発明の第２の観点は、基板を収容してプラズマ処理を施す処理室と、前記処理室内で基板が載置される載置面を有する載置台と、前記処理室内に処理ガスを供給する処理ガス供給系と、前記処理室内を排気する排気部と、前記載置台に載置された基板に対してプラズマ処理を行うためのプラズマを生成するプラズマ生成機構と、前記載置台にバイアス用の高周波電力を印加するための高周波電源とを有するプラズマ処理装置において、前記処理室に供給された処理ガスを前記排気部に導く排気構造であって、前記処理室から前記排気部へ至る排気口部分またはその近傍に設けられた、複数の開口を有する第１の開口バッフル板および第２の開口バッフル板を有し、前記第１の開口バッフル板は排気経路の下流側、前記第２の開口バッフル板は排気経路の上流側に設けられ、前記第１の開口バッフル板および前記第２の開口バッフル板はいずれも導電性材料からなり、前記第１の開口バッフル板は接地され、前記第２の開口バッフル板は電気的にフローティング状態であり、前記第１の開口バッフル板および前記第２の開口バッフル板は、これらの間に安定放電が生成可能な間隔で設けられていることを特徴とする排気構造を提供する。   According to a second aspect of the present invention, there is provided a processing chamber for accommodating a substrate and performing plasma processing, a mounting table having a mounting surface on which the substrate is mounted in the processing chamber, and a processing gas in the processing chamber. A processing gas supply system to supply, an exhaust unit for exhausting the processing chamber, a plasma generation mechanism for generating plasma for performing plasma processing on the substrate placed on the mounting table, and a bias to the mounting table A plasma processing apparatus having a high-frequency power source for applying a high-frequency power for use, wherein the processing gas supplied to the processing chamber is led to the exhaust unit and is exhausted from the processing chamber to the exhaust unit A first opening baffle plate having a plurality of openings and a second opening baffle plate provided at or near the mouth portion, wherein the first opening baffle plate is located downstream of the exhaust path, and the second opening baffle plate Opening bag The first aperture baffle plate and the second aperture baffle plate are both made of a conductive material, the first aperture baffle plate is grounded, and the second aperture baffle plate is grounded. The opening baffle plate is electrically floating, and the first opening baffle plate and the second opening baffle plate are provided at an interval between which stable discharge can be generated. An exhaust structure is provided.

前記第１の開口バッフル板は、前記排気部の排気配管の入口部分を覆うように設けられていることが好ましい。また、前記第１の開口バッフル板と前記第２の開口バッフル板との間隔は、１〜１０ｍｍであることが好ましい。   The first opening baffle plate is preferably provided so as to cover an inlet portion of an exhaust pipe of the exhaust section. Moreover, it is preferable that the space | interval of a said 1st opening baffle board and a said 2nd opening baffle board is 1-10 mm.

前記第１の開口バッフル板および前記第２の開口バッフル板は、スリット状もしくはメッシュ状に構成されるか、または多数のパンチング孔を有するものとすることができる。   The first opening baffle plate and the second opening baffle plate may be configured in a slit shape or a mesh shape, or may have a number of punching holes.

前記第１の開口バッフル板および前記第２の開口バッフル板の開口率は、６１．５％以下であることが好ましい。   The opening ratio of the first opening baffle plate and the second opening baffle plate is preferably 61.5% or less.

また、基板に対してプラズマ処理を行う処理領域と前記排気部に繋がる排気領域とに仕切る、導電性材料からなり開口部を有さない複数の仕切り部材をさらに有し、前記複数の仕切り部材は、接地電位に接続され、隣接するものどうしが、その間に、前記処理領域に供給された処理ガスを前記排気領域に導く間口が形成されるように離間して配置されている構成とすることができる。この場合に、前記仕切り部材と異なる高さ位置に、平面視した場合に前記間口の少なくとも一部を遮蔽するように設けられ、導電性材料からなるとともに開口部を有さず、かつ接地電位に接続された遮蔽部材をさらに有することが好ましい。   Further, the substrate further includes a plurality of partition members made of a conductive material and having no openings, which are divided into a processing region for performing plasma processing on the substrate and an exhaust region connected to the exhaust unit. The adjacent ones connected to the ground potential are arranged so as to be spaced apart so as to form an opening for guiding the processing gas supplied to the processing region to the exhaust region. it can. In this case, it is provided at a height different from that of the partition member so as to shield at least a part of the frontage when viewed in plan, is made of a conductive material, has no opening, and has a ground potential. It is preferable to further have a connected shielding member.

前記処理室は平面形状が矩形状の空間を有し、前記載置台は平面形状が矩形状をなし、矩形状の基板が載置される構成とすることができる。   The processing chamber has a space having a rectangular planar shape, and the mounting table has a rectangular planar shape, and a rectangular substrate can be placed thereon.

前記プラズマ生成機構は、前記処理領域に誘導結合プラズマを生成するため高周波アンテナを有する構成とすることができる。前記高周波アンテナは、前記処理室の上部に誘電体窓を介して設置されてもよいし、前記処理室の上部に金属窓を介して設置されてもよい。   The plasma generation mechanism may have a high frequency antenna for generating inductively coupled plasma in the processing region. The high-frequency antenna may be installed in the upper part of the processing chamber through a dielectric window, or may be installed in the upper part of the processing chamber through a metal window.

本発明によれば、処理室から排気部へ至る排気口部分またはその近傍に第１の開口バッフル板を接地した状態で設け、かつその排気経路上流側に第２の開口バッフル板をフローティング状態で設け、かつ、第１の開口バッフル板および第２の開口バッフル板を、これらの間で安定放電が形成される程度の間隔で配置したので、排気部へのプラズマリークを抑制することができ、かつバッフル板上方での不安定なグロー放電を抑制して処理室内に安定したプラズマを生成することができる。   According to the present invention, the first opening baffle plate is provided in a grounded state at or near the exhaust port portion extending from the processing chamber to the exhaust portion, and the second opening baffle plate is floated upstream of the exhaust path. Since the first opening baffle plate and the second opening baffle plate are disposed at such an interval that a stable discharge is formed between them, plasma leakage to the exhaust part can be suppressed, In addition, it is possible to suppress unstable glow discharge above the baffle plate and generate stable plasma in the processing chamber.

本発明の一実施形態に係るプラズマ処理装置を示す垂直断面図である。1 is a vertical sectional view showing a plasma processing apparatus according to an embodiment of the present invention. 本発明の一実施形態に係るプラズマ処理装置を示す水平断面図である。It is a horizontal sectional view showing a plasma treatment apparatus concerning one embodiment of the present invention. 本発明の一実施形態に係るプラズマ処理装置の排気部の詳細を示す断面図である。It is sectional drawing which shows the detail of the exhaust part of the plasma processing apparatus which concerns on one Embodiment of this invention. 第１および第２の開口バッフル板の構造例を示す図である。It is a figure which shows the structural example of the 1st and 2nd opening baffle board. 排気口の配置の別の例を示す水平断面図である。It is a horizontal sectional view which shows another example of arrangement | positioning of an exhaust port. 載置台に高周波バイアスを印加した際に容量結合プラズマが発生する様子を示す模式図である。It is a schematic diagram which shows a mode that capacitive coupling plasma generate | occur | produces when a high frequency bias is applied to a mounting base. 本実施形態における二段の開口バッフル板を設けた場合の作用効果を説明するための図である。It is a figure for demonstrating the effect at the time of providing the two-stage opening baffle board in this embodiment. 変形例に係るプラズマ処理装置を示す図であり、（ａ）は水平断面図、（ｂ）は仕切り部材と遮蔽部材との位置関係を示す斜視図である。It is a figure which shows the plasma processing apparatus which concerns on a modification, (a) is a horizontal sectional view, (b) is a perspective view which shows the positional relationship of a partition member and a shielding member.

以下、添付図面を参照して、本発明の実施形態について説明する。図１は本発明の一実施形態に係るプラズマ処理装置を示す垂直断面図、図２はその水平断面図、図３は排気部の詳細を示す断面図である。   Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 is a vertical sectional view showing a plasma processing apparatus according to an embodiment of the present invention, FIG. 2 is a horizontal sectional view thereof, and FIG. 3 is a sectional view showing details of an exhaust section.

本実施形態のプラズマ処理装置は、誘導結合プラズマを生成して、例えばＦＰＤ用ガラス基板のような矩形基板に対しエッチング処理やアッシング処理等の誘導結合プラズマ処理を行う誘導結合プラズマ処理装置として構成される。   The plasma processing apparatus of the present embodiment is configured as an inductively coupled plasma processing apparatus that generates inductively coupled plasma and performs inductively coupled plasma processing such as etching and ashing on a rectangular substrate such as a glass substrate for FPD. The

このプラズマ処理装置は、導電性材料、例えば、内壁面が陽極酸化処理されたアルミニウムからなる角筒形状の気密な本体容器１を有する。この本体容器１は分解可能に組み立てられており、接地線１ａにより接地されている。本体容器１は、誘電体壁２により上下にアンテナ室３および処理室４に区画されている。誘電体壁２は処理室４の天井壁を構成している。誘電体壁２は、Ａｌ2Ｏ3等のセラミックス、石英等で構成されている。 This plasma processing apparatus has a rectangular tube-shaped airtight main body container 1 made of a conductive material, for example, aluminum whose inner wall surface is anodized. The main body container 1 is assembled so as to be disassembled, and is grounded by a ground wire 1a. The main body container 1 is divided into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2 in the vertical direction. The dielectric wall 2 constitutes the ceiling wall of the processing chamber 4. The dielectric wall 2 is made of ceramics such as Al 2 O 3 , quartz, or the like.

本体容器１におけるアンテナ室３の側壁３ａと処理室４の側壁４ａとの間には内側に突出する支持棚５が設けられており、この支持棚５の上に誘電体壁２が載置される。   A support shelf 5 protruding inward is provided between the side wall 3 a of the antenna chamber 3 and the side wall 4 a of the processing chamber 4 in the main body container 1, and the dielectric wall 2 is placed on the support shelf 5. The

誘電体壁２の下側部分には、処理ガス供給用のシャワー筐体１１が嵌め込まれている。シャワー筐体１１は十字状に設けられており、誘電体壁２を下から支持する構造、例えば梁構造となっている。なお、上記誘電体壁２を支持するシャワー筐体１１は、複数本のサスペンダ（図示せず）により本体容器１の天井に吊された状態となっている。支持棚５およびシャワー筐体１１は誘電体部材で被覆されていてもよい。   A shower casing 11 for supplying a processing gas is fitted into the lower portion of the dielectric wall 2. The shower housing 11 is provided in a cross shape, and has a structure that supports the dielectric wall 2 from below, for example, a beam structure. The shower housing 11 that supports the dielectric wall 2 is suspended from the ceiling of the main body container 1 by a plurality of suspenders (not shown). The support shelf 5 and the shower housing 11 may be covered with a dielectric member.

このシャワー筐体１１は導電性材料、望ましくは金属、例えば汚染物が発生しないようにその内面または外面が陽極酸化処理されたアルミニウムで構成されている。このシャワー筐体１１には水平に伸びるガス流路１２が形成されており、このガス流路１２には、下方に向かって延びる複数のガス吐出孔１２ａが連通している。一方、誘電体壁２の上面中央には、このガス流路１２に連通するようにガス供給管２０ａが設けられている。ガス供給管２０ａは、本体容器１の天井からその外側へ貫通し、処理ガス供給源およびバルブシステム等を含む処理ガス供給系２０に接続されている。したがって、プラズマ処理においては、処理ガス供給系２０から供給された処理ガスがガス供給管２０ａを介してシャワー筐体１１内に供給され、その下面のガス吐出孔１２ａから処理室４内へ吐出される。   This shower casing 11 is made of a conductive material, preferably a metal, for example, aluminum whose inner surface or outer surface is anodized so as not to generate contaminants. The shower casing 11 is formed with a gas channel 12 extending horizontally, and a plurality of gas discharge holes 12 a extending downward are communicated with the gas channel 12. On the other hand, a gas supply pipe 20 a is provided at the center of the upper surface of the dielectric wall 2 so as to communicate with the gas flow path 12. The gas supply pipe 20a penetrates from the ceiling of the main body container 1 to the outside and is connected to a processing gas supply system 20 including a processing gas supply source and a valve system. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied into the shower housing 11 through the gas supply pipe 20a and discharged into the processing chamber 4 from the gas discharge hole 12a on the lower surface thereof. The

アンテナ室３内には、高周波（ＲＦ）アンテナ１３が配設されている。高周波アンテナ１３は、銅やアルミニウム等の良導電性の金属からなるアンテナ線１３ａを環状や渦巻状等の従来用いられる任意の形状に配置して構成される。複数のアンテナ部を有する多重アンテナであってもよい。   A radio frequency (RF) antenna 13 is disposed in the antenna chamber 3. The high-frequency antenna 13 is configured by arranging antenna wires 13a made of a highly conductive metal such as copper or aluminum in an arbitrary shape such as an annular shape or a spiral shape. A multiple antenna having a plurality of antenna units may be used.

アンテナ線１３ａの端子２２にはアンテナ室３の上方へ延びる給電部材１６が接続されている。給電部材１６の上端には、給電線１９より高周波電源１５が接続されている。また、給電線１９には整合器１４が介装されている。さらに、高周波アンテナ１３は絶縁部材からなるスペーサ１７により誘電体壁２から離間している。そして、高周波アンテナ１３に、高周波電源１５から例えば周波数が１３．５６ＭＨｚの高周波電力が供給されることにより、処理室４内に誘導電界が形成され、この誘導電界によりシャワー筐体１１から供給された処理ガスがプラズマ化され、誘導結合プラズマが生成される。   A power feeding member 16 extending above the antenna chamber 3 is connected to the terminal 22 of the antenna wire 13a. A high frequency power supply 15 is connected to the upper end of the power supply member 16 through a power supply line 19. A matching unit 14 is interposed in the power supply line 19. Further, the high frequency antenna 13 is separated from the dielectric wall 2 by a spacer 17 made of an insulating member. Then, a high frequency power having a frequency of 13.56 MHz, for example, is supplied to the high frequency antenna 13 from the high frequency power supply 15, whereby an induction electric field is formed in the processing chamber 4, and the induction electric field is supplied from the shower casing 11. The processing gas is turned into plasma and inductively coupled plasma is generated.

処理室４内の底壁４ｂ上には、誘電体壁２を挟んで高周波アンテナ１３と対向するように、矩形状の基板Ｇを載置するための載置面を有する載置台２３が絶縁体部材２４を介して固定されている。絶縁体部材２４は額縁状をなしている。載置台２３は、導電性材料、例えば表面が陽極酸化処理されたアルミニウムで構成された本体２３ａと、本体２３ａの外周を囲むように設けられた絶縁体枠２３ｂとを有している。載置台２３に載置された基板Ｇは、静電チャック（図示せず）により吸着保持される。   On the bottom wall 4 b in the processing chamber 4, a mounting table 23 having a mounting surface for mounting a rectangular substrate G so as to face the high-frequency antenna 13 with the dielectric wall 2 interposed therebetween is an insulator. It is fixed via the member 24. The insulator member 24 has a frame shape. The mounting table 23 includes a main body 23a made of a conductive material, for example, aluminum whose surface is anodized, and an insulator frame 23b provided so as to surround the outer periphery of the main body 23a. The substrate G mounted on the mounting table 23 is attracted and held by an electrostatic chuck (not shown).

載置台２３は、基板Ｇの搬入出のためのリフターピン（図示せず）が、本体容器１の底壁、絶縁体部材２４を介して挿通されている。リフターピンは、本体容器１外に設けられた昇降機構（図示せず）により昇降駆動して基板Ｇの搬入出を行うようになっている。なお、載置台２３は、昇降機構により昇降可能な構造としてもよい。   In the mounting table 23, lifter pins (not shown) for loading and unloading the substrate G are inserted through the bottom wall of the main body container 1 and the insulator member 24. The lifter pins are moved up and down by an elevating mechanism (not shown) provided outside the main body container 1 to carry in and out the substrate G. The mounting table 23 may have a structure that can be lifted and lowered by a lifting mechanism.

載置台２３の本体２３ａには、給電線２５により、整合器２６を介してバイアス用高周波電源２７が接続されている。この高周波電源２７は、プラズマ処理中に、高周波バイアス（バイアス用高周波電力）を載置台に印加する。高周波バイアスの周波数は、例えば周波数が６ＭＨｚである。このバイアス用の高周波電力により、処理室４内に生成されたプラズマ中のイオンが効果的に基板Ｇに引き込まれる。   A bias high-frequency power source 27 is connected to the main body 23 a of the mounting table 23 through a matching unit 26 by a power supply line 25. The high frequency power source 27 applies a high frequency bias (bias high frequency power) to the mounting table during plasma processing. The frequency of the high frequency bias is, for example, 6 MHz. The ions in the plasma generated in the processing chamber 4 are effectively drawn into the substrate G by the high frequency power for bias.

また、載置台２３内には、基板Ｇの温度を制御するため、セラミックヒータ等の加熱手段や冷媒流路等からなる温度制御機構と、温度センサーとが設けられている（いずれも図示せず）。   In addition, a temperature control mechanism including a heating means such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor are provided in the mounting table 23 (not shown). ).

さらに、載置台２３は、基板Ｇが載置された際に、その裏面側に冷却空間（図示せず）が形成されるようになっており、この冷却空間に熱伝達用ガスとしてのＨｅガスを所定の圧力で供給するためのＨｅガス流路２８が接続されている。このように基板Ｇの裏面側に熱伝達用ガスを供給することにより、真空下において基板Ｇの温度制御性を良好にすることができる。   Further, when the substrate G is placed on the mounting table 23, a cooling space (not shown) is formed on the back side thereof, and a He gas as a heat transfer gas is formed in the cooling space. Is connected at a predetermined pressure. Thus, by supplying the heat transfer gas to the back side of the substrate G, the temperature controllability of the substrate G can be improved under vacuum.

処理室４の底壁４ｂの底部中央には開口部４ｃが形成されており、給電線２５、Ｈｅガス流路２８、および温度制御機構の配管や配線は、開口部４ｃを通して本体容器１外に導出される。   An opening 4c is formed in the center of the bottom of the bottom wall 4b of the processing chamber 4, and the power supply line 25, the He gas flow path 28, and the piping and wiring of the temperature control mechanism are outside the main body container 1 through the opening 4c. Derived.

処理室４の四つの側壁４ａのうち一つには、基板Ｇを搬入出するための搬入出口２９ａおよびそれを開閉するゲートバルブ２９が設けられている。   One of the four side walls 4a of the processing chamber 4 is provided with a loading / unloading port 29a for loading / unloading the substrate G and a gate valve 29 for opening / closing the loading / unloading port 29a.

処理室４の内壁（側壁４ａの内側部分）と載置台２３との間には、処理室４内を処理領域４１と排気領域４２とに仕切る４枚の仕切り部材５０が設けられている。仕切り部材５０は、開口部を有さない矩形状をなす金属等の導電性材料からなる板材で構成されている。各仕切り部材５０は、載置台２３の各側面に対応して設けられており、接地線５０ａにより接地電位に接続されている。なお、仕切り部材５０を側壁４ａと電気的に接続させて、本体容器１を介して接地するようにしてもよい。   Between the inner wall of the processing chamber 4 (the inner part of the side wall 4a) and the mounting table 23, four partition members 50 that partition the processing chamber 4 into a processing region 41 and an exhaust region 42 are provided. The partition member 50 is made of a plate material made of a conductive material such as a metal having a rectangular shape having no opening. Each partition member 50 is provided corresponding to each side surface of the mounting table 23, and is connected to a ground potential by a ground wire 50a. Note that the partition member 50 may be electrically connected to the side wall 4 a and grounded via the main body container 1.

隣接する仕切り部材５０どうしは、その間に、処理領域４１に供給されたガスを排気領域に導く間口６０が形成されるように離間して配置されており、間口６０は仕切り部材５０形成面の四隅に存在している。   Adjacent partition members 50 are spaced apart from each other so as to form a front opening 60 that guides the gas supplied to the processing region 41 to the exhaust region, and the front ports 60 are formed at the four corners of the partition member 50 forming surface. Exists.

処理領域４１は、処理室４のうち仕切り部材５０よりも上の領域であり、基板Ｇをプラズマ処理するための誘導結合プラズマが形成される領域である。また、排気領域４２は、処理室４のうち仕切り部材５０よりも下の領域であり、処理領域４１からの処理ガスが導かれ、それを排気するための領域である。   The processing region 41 is a region above the partition member 50 in the processing chamber 4 and is a region where inductively coupled plasma for plasma processing the substrate G is formed. The exhaust area 42 is an area below the partition member 50 in the processing chamber 4 and is an area for introducing the processing gas from the processing area 41 and exhausting it.

処理室４の底壁４ｂには、処理室４の底壁４ｂの四隅にそれぞれ排気口３０が設けられており、各排気口３０には排気部４０が設けられている。排気部４０は、排気口３０に接続された排気配管３１と、排気配管３１の開度を調整することにより処理室４内の圧力を制御する自動圧力制御バルブ（ＡＰＣ）３２と、処理室４内を排気配管３１を介して排気するための真空ポンプ３３とを有している。そして、真空ポンプ３３により処理室４内が排気され、プラズマ処理中、自動圧力制御バルブ（ＡＰＣ）３２の開度を調整して処理室４内を所定の真空雰囲気に設定、維持される。   On the bottom wall 4 b of the processing chamber 4, exhaust ports 30 are provided at the four corners of the bottom wall 4 b of the processing chamber 4, and an exhaust part 40 is provided at each exhaust port 30. The exhaust unit 40 includes an exhaust pipe 31 connected to the exhaust port 30, an automatic pressure control valve (APC) 32 that controls the pressure in the processing chamber 4 by adjusting the opening degree of the exhaust pipe 31, and the processing chamber 4. And a vacuum pump 33 for exhausting the inside through an exhaust pipe 31. Then, the inside of the processing chamber 4 is exhausted by the vacuum pump 33, and the opening of the automatic pressure control valve (APC) 32 is adjusted and the inside of the processing chamber 4 is set and maintained in a predetermined vacuum atmosphere during the plasma processing.

図３に示すように、排気口３０部分には、排気配管３１の入口部分を覆うように、第１の開口バッフル板３４が設けられており、第１の開口バッフル板３４の上方（つまり排気経路の上流側）の所定長離隔した位置に第１の開口バッフル板３４と対向して第２の開口バッフル板３５が設けられている。すなわち、排気口３０に上下二段の開口バッフル板が設けられている。第１の開口バッフル板３４および第２の開口バッフル板３５は、金属等の導電性材料からなり、多数の開口を有しており、例えば、図４の（ａ）に示すようなスリット状、または（ｂ）に示すようなメッシュ状、または（ｃ）に示すような多数のパンチング孔を有する構造をなしている。   As shown in FIG. 3, a first opening baffle plate 34 is provided at the exhaust port 30 so as to cover the inlet portion of the exhaust pipe 31, and is located above the first opening baffle plate 34 (that is, exhaust gas). A second opening baffle plate 35 is provided facing the first opening baffle plate 34 at a position separated by a predetermined length on the upstream side of the path. That is, the exhaust port 30 is provided with two upper and lower opening baffle plates. The first opening baffle plate 34 and the second opening baffle plate 35 are made of a conductive material such as metal and have a large number of openings. For example, a slit shape as shown in FIG. Alternatively, it has a mesh shape as shown in (b) or a structure having a large number of punching holes as shown in (c).

第１の開口バッフル板３４は、排気配管３１の上部の内周を構成する絶縁部材３６に取り付けられており、接地線３４ａにより接地されている。一方、第１の開口バッフル板３４と第２の開口バッフル板３５との間にはリング状をなす絶縁スペーサ３７が設けられており、第２の開口バッフル板３５は電気的にフローティング状態となっている。これら二段の開口バッフル板は、これらの間で安定放電可能な間隔で配置されている。第１の開口バッフル板３４と第２の開口バッフル板３５により、後述するように、排気部４０へのプラズマリークを抑制することができるとともに、安定したプラズマを形成することができるようになっている。   The first opening baffle plate 34 is attached to an insulating member 36 that constitutes the inner periphery of the upper portion of the exhaust pipe 31, and is grounded by a ground wire 34a. On the other hand, a ring-shaped insulating spacer 37 is provided between the first opening baffle plate 34 and the second opening baffle plate 35, and the second opening baffle plate 35 is in an electrically floating state. ing. These two-stage opening baffle plates are arranged at intervals at which stable discharge is possible between them. As will be described later, the first opening baffle plate 34 and the second opening baffle plate 35 can suppress plasma leakage to the exhaust portion 40 and can form stable plasma. Yes.

自動圧力制御バルブ（ＡＰＣ）３２と真空ポンプ３３との間には、真空ポンプ３３への異物の侵入を防止するためのメッシュ部材３８が設けられている。メッシュ部材３８は、金属等の導電性材料で構成されており、接地されている。   A mesh member 38 is provided between the automatic pressure control valve (APC) 32 and the vacuum pump 33 to prevent foreign matter from entering the vacuum pump 33. The mesh member 38 is made of a conductive material such as metal and is grounded.

第１の開口バッフル板３４および第２の開口バッフル板３５の間隔の好ましい範囲は、１〜１０ｍｍである。また、第１の開口バッフル板３４および第２の開口バッフル板３５の開口率は、６１．５％以下であることが好ましい。   A preferable range of the distance between the first opening baffle plate 34 and the second opening baffle plate 35 is 1 to 10 mm. Moreover, it is preferable that the aperture ratio of the 1st opening baffle board 34 and the 2nd opening baffle board 35 is 61.5% or less.

なお、排気口３０の数や位置は、装置の大きさに応じて適宜設定される。例えば、図５の水平断面図に示すように、排気口３０を処理室４の各側壁４ａに沿って２個ずつ、合計８個設けるようにしてもよい。   The number and positions of the exhaust ports 30 are appropriately set according to the size of the device. For example, as shown in the horizontal cross-sectional view of FIG. 5, two exhaust ports 30 may be provided in total, two along each side wall 4 a of the processing chamber 4.

本実施形態のプラズマ処理装置は、マイクロプロセッサ（コンピュータ）からなる制御部１００、ユーザーインターフェース１０１、記憶部１０２を有している。制御部１００は、プラズマ処理装置の各構成部、例えばバルブ、高周波電源、真空ポンプ等に指令を送り、これらを制御するようになっている。また、ユーザーインターフェース１０１は、オペレータによるプラズマ処理装置を管理するためのコマンド入力等の入力操作を行うキーボードや、プラズマ処理装置の稼働状況を可視化して表示するディスプレイ等を有し、制御部１００に接続されている。記憶部１０２は、プラズマ処理装置で実行される各種処理を制御部１００の制御にて実現するための制御プログラムや、処理条件に応じてプラズマ処理装置の各構成部に処理を実行させるためのプログラムすなわち処理レシピが格納されており、制御部１００に接続されている。処理レシピは記憶部１０２の中の記憶媒体に記憶されている。記憶媒体は、コンピュータに内蔵されたハードディスクや半導体メモリであってもよいし、ＣＤＲＯＭ、ＤＶＤ、フラッシュメモリ等の可搬性のものであってもよい。また、他の装置から、例えば専用回線を介してレシピを適宜伝送させるようにしてもよい。そして、必要に応じて、ユーザーインターフェース１０１からの指示等にて任意の処理レシピを記憶部１０２から呼び出して制御部１００に実行させることで、制御部１００の制御下で、プラズマ処理装置での所望の処理が行われる。   The plasma processing apparatus of this embodiment includes a control unit 100 including a microprocessor (computer), a user interface 101, and a storage unit 102. The controller 100 sends commands to and controls the components of the plasma processing apparatus, such as valves, high frequency power supplies, vacuum pumps, and the like. The user interface 101 includes a keyboard for performing an input operation such as command input for managing the plasma processing apparatus by an operator, a display for visualizing and displaying the operating status of the plasma processing apparatus, and the like. It is connected. The storage unit 102 is a control program for realizing various processes executed by the plasma processing apparatus under the control of the control unit 100, and a program for causing each component of the plasma processing apparatus to execute processes according to processing conditions. That is, a processing recipe is stored and connected to the control unit 100. The processing recipe is stored in a storage medium in the storage unit 102. The storage medium may be a hard disk or semiconductor memory built in the computer, or may be portable such as a CDROM, DVD, or flash memory. Moreover, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example. Then, if desired, an arbitrary processing recipe is called from the storage unit 102 by an instruction from the user interface 101 and is executed by the control unit 100, so that the desired processing in the plasma processing apparatus is performed under the control of the control unit 100. Is performed.

次に、以上のように構成されるプラズマ処理装置を用いて基板Ｇに対してプラズマ処理、例えばプラズマエッチングやプラズマアッシングを施す際の処理動作について説明する。   Next, a processing operation when performing plasma processing, for example, plasma etching or plasma ashing, on the substrate G using the plasma processing apparatus configured as described above will be described.

まず、ゲートバルブ２９を開にした状態で搬入出口２９ａから搬送機構（図示せず）により基板Ｇを処理室４内に搬入し、載置台２３の載置面に載置した後、静電チャック（図示せず）により基板Ｇを載置台２３上に固定する。次に、処理ガス供給系２０からシャワー筐体１１のガス吐出孔１２ａを介して処理ガスを処理室４内に供給するとともに、自動圧力制御バルブ（ＡＰＣ）３２により圧力を制御しつつ排気口３０から排気配管３１を介して真空ポンプ３３により処理室４内を真空排気することにより、処理室内を例えば０．６６〜２６．６Ｐａ程度の圧力雰囲気に維持する。   First, after the gate valve 29 is opened, the substrate G is loaded into the processing chamber 4 from the loading / unloading port 29a by the transfer mechanism (not shown) and placed on the placement surface of the placement table 23, and then the electrostatic chuck The substrate G is fixed on the mounting table 23 (not shown). Next, the processing gas is supplied into the processing chamber 4 from the processing gas supply system 20 through the gas discharge hole 12a of the shower housing 11 and the pressure is controlled by the automatic pressure control valve (APC) 32 while the exhaust port 30 is controlled. Then, the inside of the processing chamber 4 is evacuated by the vacuum pump 33 through the exhaust pipe 31 to maintain the processing chamber in a pressure atmosphere of about 0.66 to 26.6 Pa, for example.

また、このとき基板Ｇの裏面側の冷却空間には、基板Ｇの温度上昇や温度変化を回避するために、Ｈｅガス流路２８を介して、熱伝達用ガスとしてのＨｅガスを供給する。   At this time, He gas as heat transfer gas is supplied to the cooling space on the back surface side of the substrate G through the He gas flow path 28 in order to avoid temperature rise and temperature change of the substrate G.

次いで、高周波電源１５から例えば１３．５６ＭＨｚの高周波を高周波アンテナ１３に印加し、これにより誘電体壁２を介して処理室４内に均一な誘導電界を形成する。このようにして形成された誘導電界により、処理室４内で処理ガスがプラズマ化し、高密度の誘導結合プラズマが生成される。このプラズマにより、基板Ｇに対してプラズマ処理、例えば基板Ｇの所定の膜に対しプラズマエッチングやプラズマアッシングが行われる。このとき同時に、高周波電源２７から高周波バイアスとして、例えば周波数が６ＭＨｚの高周波電力を載置台２３に印加して、処理室４内に生成されたプラズマ中のイオンが効果的に基板Ｇに引き込まれるようにする。   Next, a high frequency of 13.56 MHz, for example, is applied from the high frequency power supply 15 to the high frequency antenna 13, thereby forming a uniform induction electric field in the processing chamber 4 via the dielectric wall 2. Due to the induction electric field formed in this manner, the processing gas is turned into plasma in the processing chamber 4 to generate high-density inductively coupled plasma. With this plasma, plasma processing is performed on the substrate G, for example, plasma etching or plasma ashing is performed on a predetermined film of the substrate G. At the same time, high-frequency power having a frequency of 6 MHz, for example, is applied to the mounting table 23 as a high-frequency bias from the high-frequency power source 27 so that ions in the plasma generated in the processing chamber 4 are effectively drawn into the substrate G. To.

処理ガスは、処理室４内の処理領域４１でプラズマ化してプラズマ処理に供された後、真空ポンプ３３により吸引されることにより、隣接する仕切り部材５０の間に形成された間口６０から排気領域４２に至り、排気口３０から排気配管３１を経て排気される。   The processing gas is converted into plasma in the processing region 41 in the processing chamber 4, subjected to plasma processing, and then sucked by the vacuum pump 33, whereby the processing gas is exhausted from the opening 60 formed between the adjacent partition members 50. 42 and exhausted from the exhaust port 30 through the exhaust pipe 31.

載置台２３に高周波バイアスを印加することにより、図６に示すように、処理室４の内壁や排気口３０近傍の接地された導電体を対向電極として容量結合プラズマが発生する。このとき、基板Ｇが大型基板である場合には、載置台２３に高パワーの高周波電力を印加する必要があり、対向電極が小さいとアーキングを生じたりして電気的に不安定になる。このため、処理室４の内壁（側壁４ａの内側部分）と載置台２３との間の位置に、開口部を有さない複数の仕切り部材５０を接地して設けて対向電極として機能するようにし、対向電極を拡大することにより電気的安定性を確保する。また、隣接する仕切り部材５０の間に排気領域４２に至る間口６０が形成されており、仕切り部材５０によって排気の制御も行うようになっている。   By applying a high frequency bias to the mounting table 23, capacitively coupled plasma is generated using the grounded conductor near the inner wall of the processing chamber 4 and the exhaust port 30 as a counter electrode, as shown in FIG. At this time, if the substrate G is a large substrate, it is necessary to apply high-power high-frequency power to the mounting table 23. If the counter electrode is small, arcing may occur and electrical unstable. For this reason, a plurality of partition members 50 having no openings are grounded at positions between the inner wall of the processing chamber 4 (inside part of the side wall 4a) and the mounting table 23 so as to function as counter electrodes. Ensuring electrical stability by enlarging the counter electrode. Further, an opening 60 reaching the exhaust region 42 is formed between the adjacent partition members 50, and the exhaust is controlled by the partition member 50.

ただし、このように複数の接地された仕切り部材５０を設けても、処理条件によっては、真空ポンプ３３で吸引することによりプラズマが排気口３０近傍に引き寄せられ、このプラズマが排気部４０の内部に侵入すると、例えば、自動圧力制御バルブ（ＡＰＣ）３２近傍で放電による発光（アーキング）が生じ、その表面の陽極酸化皮膜や、真空ポンプ３３上のメッシュ部材３８が消耗してしまう。   However, even if a plurality of grounded partition members 50 are provided in this way, depending on the processing conditions, the plasma is attracted to the vicinity of the exhaust port 30 by being sucked by the vacuum pump 33, and this plasma is brought into the exhaust unit 40. Intrusion, for example, light emission (arcing) occurs due to discharge near the automatic pressure control valve (APC) 32, and the anodic oxide film on the surface and the mesh member 38 on the vacuum pump 33 are consumed.

これに対して、図７（ａ）に示すように、排気口３０に接地された第１の開口バッフル板３４のみを設けると、プラズマは第１の開口バッフル板３４で失活するため、排気部４０へのプラズマの侵入が抑制され、自動圧力制御バルブ（ＡＰＣ）３２近傍での放電による発光（アーキング）を抑制することができる。しかし、処理室４で接地電位に偏りが生じ、その上方領域に不安定なグロー放電が発生して、放電が動き回るちらつきが発生し、処理室４内のプラズマが不安定になってしまう。   On the other hand, as shown in FIG. 7A, if only the first opening baffle plate 34 that is grounded is provided at the exhaust port 30, the plasma is deactivated by the first opening baffle plate 34. Intrusion of plasma into the portion 40 is suppressed, and light emission (arcing) due to discharge in the vicinity of the automatic pressure control valve (APC) 32 can be suppressed. However, the ground potential is biased in the processing chamber 4, an unstable glow discharge is generated in the upper region thereof, flickering occurs when the discharge moves around, and the plasma in the processing chamber 4 becomes unstable.

一方、図７（ｂ）に示すように、排気口３０にフローティング状態の第２の開口バッフル板３５のみを設けると、第２の開口バッフル板３５はプラズマ電位であるから、その上方領域に不安定なグロー放電が発生することはない。しかし、フローティング状態の第２の開口バッフル板３５ではプラズマは失活しないので、排気部４０へのプラズマの侵入を有効に防止することができず、自動圧力制御バルブ（ＡＰＣ）３２の近傍での放電による発光（アーキング）を十分に抑制することができない。   On the other hand, as shown in FIG. 7B, if only the second opening baffle plate 35 in the floating state is provided at the exhaust port 30, the second opening baffle plate 35 is at a plasma potential, so that the upper opening baffle plate 35 is not in the upper region. Stable glow discharge does not occur. However, since the plasma is not deactivated in the second opening baffle plate 35 in the floating state, it is not possible to effectively prevent the plasma from entering the exhaust part 40, and the vicinity of the automatic pressure control valve (APC) 32. Light emission (arcing) due to discharge cannot be sufficiently suppressed.

そこで、本実施形態では、図７（ｃ）に示すように、下段側の接地された第１の開口バッフル板３４と、上段側（排気経路の上流側）のフローティング状態の第２の開口バッフル板３５とを、これらの間で安定放電可能な間隔で二段に設ける。つまり、フローティング状態の第２の開口バッフル板３５はプラズマ電位となり、接地された第１のバッフル板との間で電位差を生じる。このため、これらの開口バッフル間の間隔を適切に調整することによりこれらの間に安定的な放電が形成されプラズマが保持される。そして、第２の開口バッフル板３５を透過したイオンや電子は、このプラズマによりトラップされる。これにより、第１の開口バッフル板３４と第２の開口バッフル板３５との間でちらつきのない安定的なグロー放電が形成されるものと推測される。また、排気口３０に引き寄せられたプラズマは、下段側の第１の開口バッフル板３４で失活するため、自動圧力制御バルブ（ＡＰＣ）３２の近傍での放電による発光（アーキング）を抑制することができる。さらに、上段側の第２の開口バッフル板３５はプラズマ電位であるから処理室４の接地電位の偏りが緩和される。そして、これらによって処理室４内に安定的なプラズマを生成することができる。   Therefore, in the present embodiment, as shown in FIG. 7C, the first opening baffle plate 34 grounded on the lower stage side and the second opening baffle in the floating state on the upper stage side (upstream side of the exhaust path). The plates 35 are provided in two stages at intervals that enable stable discharge between them. That is, the floating second floating baffle plate 35 has a plasma potential, and generates a potential difference with the grounded first baffle plate. For this reason, by appropriately adjusting the interval between the opening baffles, a stable discharge is formed between them to maintain the plasma. The ions and electrons that have passed through the second opening baffle plate 35 are trapped by this plasma. Thereby, it is estimated that a stable glow discharge without flickering is formed between the first opening baffle plate 34 and the second opening baffle plate 35. Further, since the plasma attracted to the exhaust port 30 is deactivated by the first opening baffle plate 34 on the lower stage side, light emission (arcing) due to discharge in the vicinity of the automatic pressure control valve (APC) 32 is suppressed. Can do. Furthermore, since the second opening baffle plate 35 on the upper stage side has a plasma potential, the unevenness of the ground potential of the processing chamber 4 is alleviated. And stable plasma can be produced | generated in the process chamber 4 by these.

このとき、第１の開口バッフル板３４と第２の開口バッフル板３５との間隔は、上述したように、これらの間で安定放電が生成可能な程度の間隔にする。間隔が広すぎるとこれらの間に安定放電が生じず、接地された第１の開口バッフル板３４上での不安定なグロー放電が発生する現象を抑制することが困難となる。また、これらの間隔が狭すぎると、第１の開口バッフル板３４によりプラズマを十分に死活させることができず、排気部４０へのプラズマの侵入を防止することが困難となる。このような観点から、第１の開口バッフル板３４と第２の開口バッフル板３５との間隔は、１〜１０ｍｍの範囲が好ましい。   At this time, the interval between the first opening baffle plate 34 and the second opening baffle plate 35 is set to such an extent that stable discharge can be generated between them as described above. If the interval is too wide, stable discharge does not occur between them, and it becomes difficult to suppress the phenomenon that unstable glow discharge occurs on the grounded first opening baffle plate 34. If these intervals are too narrow, the first opening baffle plate 34 cannot sufficiently activate the plasma, and it is difficult to prevent the plasma from entering the exhaust part 40. From such a viewpoint, the distance between the first opening baffle plate 34 and the second opening baffle plate 35 is preferably in the range of 1 to 10 mm.

また、プラズマをトラップする効果、および第１の開口バッフル板３４と第２の開口バッフル板３５との間に安定した放電を形成する効果を得る観点からは、第１の開口バッフル板３４および第２の開口バッフル板３５の開口率は、６１．５％以下が好ましい。   Further, from the viewpoint of obtaining the effect of trapping plasma and the effect of forming a stable discharge between the first aperture baffle plate 34 and the second aperture baffle plate 35, the first aperture baffle plate 34 and the second aperture baffle plate 34 The aperture ratio of the two open baffle plates 35 is preferably 61.5% or less.

このように本実施形態によれば、排気口３０部分に排気配管３１の入口部分を覆うように第１の開口バッフル板３４を接地した状態で設け、かつその排気経路上流側に第２の開口バッフル板３５をフローティング状態で設け、かつ、第１の開口バッフル板３４および第２の開口バッフル板３５を、これらの間で安定放電が形成される程度の間隔で配置したので、排気部４０へのプラズマリークを抑制することができ、かつバッフル板上方での不安定なグロー放電を抑制して処理室４内に安定したプラズマを生成することができる。   Thus, according to the present embodiment, the first opening baffle plate 34 is provided in a grounded state so as to cover the inlet portion of the exhaust pipe 31 at the exhaust port 30 portion, and the second opening is provided upstream of the exhaust path. Since the baffle plate 35 is provided in a floating state, and the first opening baffle plate 34 and the second opening baffle plate 35 are arranged at an interval at which a stable discharge is formed between them, the exhaust portion 40 is provided. The plasma leakage can be suppressed, and unstable glow discharge above the baffle plate can be suppressed, and stable plasma can be generated in the processing chamber 4.

次に、本実施形態の変形例について説明する。図８（ａ）は変形例に係るプラズマ処理装置を示す水平断面図、（ｂ）はそのプラズマ処理装置における仕切り部材と遮蔽部材との位置関係を示す斜視図である。このプラズマ処理装置は、隣接する仕切り部材５０の間に形成される間口６０の下方位置に遮蔽部材５２が設けられている他は、図１のプラズマ処理装置と同様に構成されている。   Next, a modification of this embodiment will be described. FIG. 8A is a horizontal sectional view showing a plasma processing apparatus according to a modification, and FIG. 8B is a perspective view showing the positional relationship between a partition member and a shielding member in the plasma processing apparatus. This plasma processing apparatus is configured in the same manner as the plasma processing apparatus of FIG. 1 except that a shielding member 52 is provided at a position below an opening 60 formed between adjacent partition members 50.

遮蔽部材５２は金属等の導電性材料からなる板材で構成され、処理室４の内壁（側壁４ａの内側部分）と載置台２３との間の四隅であって、仕切り部材５０の下方位置にそれぞれ配置されている。遮蔽部材５２は、平面視した場合に、その少なくとも一部が仕切り部材５０と重なるように配置され、間口６０を遮蔽するようになっている。また、遮蔽部材５２は、接地線５２ａにより接地電位に接続されている。遮蔽部材５２を本体容器１または仕切り部材５０を介して接地してもよい。   The shielding members 52 are made of a plate material made of a conductive material such as metal, and are at the four corners between the inner wall of the processing chamber 4 (the inner portion of the side wall 4a) and the mounting table 23, and below the partition members 50, respectively. Has been placed. The shielding member 52 is arranged so that at least a part of the shielding member 52 overlaps the partition member 50 when seen in a plan view and shields the frontage 60. Further, the shielding member 52 is connected to the ground potential by a ground line 52a. The shielding member 52 may be grounded via the main body container 1 or the partition member 50.

このように、仕切り部材５０の下方位置に、間口６０を遮蔽するように、接地された遮蔽部材５２を設けることにより、排気経路を処理領域４１に存在するプラズマから遮蔽することができ、プラズマが排気口３０に引き寄せられることを抑制することがでる。   Thus, by providing the grounded shielding member 52 at the lower position of the partition member 50 so as to shield the frontage 60, the exhaust path can be shielded from the plasma existing in the processing region 41, and the plasma is The attraction to the exhaust port 30 can be suppressed.

なお、遮蔽部材５２は間口６０を完全に遮蔽するのではなく、間口６０の一部を遮蔽してもある程度の遮蔽効果を得ることができる。また、遮蔽部材５２は、仕切り部材５０と異なる高さ位置に設けられていればよく、仕切り部材５０の上方位置に設けてもよい。   Note that the shielding member 52 does not completely shield the frontage 60, but a certain degree of shielding effect can be obtained even if a part of the frontage 60 is shielded. Further, the shielding member 52 only needs to be provided at a height position different from that of the partition member 50, and may be provided above the partition member 50.

なお、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、誘導結合型のプラズマ処理装置として処理室の上部に誘電体窓を介して高周波アンテナが設けられた場合について示したが、誘電体窓ではなく金属窓を介して高周波アンテナが設けられた場合についても適用できる。この場合、処理ガスの供給は、梁構造等の十字状のシャワー筐体からではなく金属窓にガスシャワーを設けて供給してもよい。   The present invention can be variously modified without being limited to the above embodiment. For example, in the above embodiment, the case where a high frequency antenna is provided via a dielectric window at the top of the processing chamber as an inductively coupled plasma processing apparatus has been described. However, a high frequency antenna is not provided via a metal window but a dielectric window. This can also be applied to the case where is provided. In this case, the processing gas may be supplied by providing a gas shower on a metal window instead of from a cross-shaped shower housing such as a beam structure.

また、上記実施形態では、バイアス用高周波電力が印加される載置台に対する対向電極の面積が小さい誘導結合型のプラズマ処理装置に本発明が特に効果的に適用できることを示したが、これに限らず、載置台にバイアス用高周波電力が印加されるプラズマ処理装置であれば適用可能であり、例えば、マイクロ波を用いたプラズマ処理装置や、対向電極の面積が比較的大きい容量結合型（平行平板型）のプラズマ処理装置であっても適用可能である。   Further, in the above-described embodiment, it has been shown that the present invention can be particularly effectively applied to an inductively coupled plasma processing apparatus in which the area of the counter electrode with respect to the mounting table to which the high frequency bias power is applied is not limited thereto. Any plasma processing apparatus in which a high frequency power for bias is applied to the mounting table is applicable. For example, a plasma processing apparatus using microwaves or a capacitively coupled type (parallel plate type) having a relatively large counter electrode area. It is also applicable to the plasma processing apparatus.

また、上記実施形態では、第１の開口バッフル板および第２の開口バッフル板を排気口部分に設けた例を示したが、これに限らず、排気口の近傍であってもよい。また、第１の開口バッフル板は必ずしも排気配管の入口部分を覆う必要はなく、排気部にプラズマがリークすることを抑制できる位置に配置されればよい。さらに、第１の開口バッフル板および第２の開口バッフル板を、処理室４の内壁（側壁４ａの内側部分）と載置台２３との間の全面に亘って設けてもよい。   Moreover, although the example which provided the 1st opening baffle board and the 2nd opening baffle board in the exhaust port part was shown in the said embodiment, it may not be restricted to this but the vicinity of an exhaust port. Further, the first opening baffle plate does not necessarily need to cover the inlet portion of the exhaust pipe, and may be disposed at a position where the plasma can be prevented from leaking into the exhaust portion. Furthermore, the first opening baffle plate and the second opening baffle plate may be provided over the entire surface between the inner wall of the processing chamber 4 (the inner portion of the side wall 4a) and the mounting table 23.

さらにまた、上記実施形態では、隣接する仕切り部材の間の間口を処理室の四隅に形成した例について示したが、これに限るものではない。   Furthermore, in the above-described embodiment, an example in which the frontage between adjacent partition members is formed at the four corners of the processing chamber is shown, but the present invention is not limited to this.

さらにまた、上記実施形態では、第１および第２の開口バッフル板を、排気機構の穴部分に適用した例について示したが、ビューポートや基板搬入出口など、プラズマ処理装置の処理容器に設けられた開口であれば適用することができる。   Furthermore, in the above-described embodiment, an example in which the first and second opening baffle plates are applied to the hole portion of the exhaust mechanism has been described. Any opening can be used.

さらにまた、上記実施形態では本発明をプラズマエッチングやプラズマアッシングを行う装置に適用した場合について示したが、ＣＶＤ成膜等の他のプラズマ処理装置に適用することができる。さらに、上記実施形態では、基板としてＦＰＤ用の矩形基板を用いた例を示したが、他の矩形基板を処理する場合にも適用可能であるし、矩形に限らず例えば半導体ウエハ等の円形の基板にも適用可能である。   Furthermore, although the case where the present invention is applied to an apparatus for performing plasma etching or plasma ashing is shown in the above embodiment, the present invention can be applied to other plasma processing apparatuses such as CVD film formation. Furthermore, in the above-described embodiment, an example in which a rectangular substrate for FPD is used as a substrate has been shown. However, the present invention can be applied to processing other rectangular substrates, and is not limited to a rectangular shape, for example, a circular shape such as a semiconductor wafer. It can also be applied to a substrate.

１；本体容器
２；誘電体壁（誘電体部材）
３；アンテナ室
４；処理室
１３；高周波アンテナ
１４；整合器
１５；高周波電源
１６；給電部材
１９；給電線
２０；処理ガス供給系
２２；端子
２３；載置台
２７；バイアス用高周波電源
３０；排気口
３１；排気配管
３２；自動圧力制御バルブ（ＡＰＣ）
３３；真空ポンプ
３４；第１の開口バッフル板
３５；第２の開口バッフル板
４０；排気部
４１；処理領域
４２；排気領域
５０；仕切り部材
３４ａ，５０ａ，５２ａ；接地線
５２；遮蔽部材
６０；間口
１００；制御部
Ｇ；基板 1; Main body container 2; Dielectric wall (dielectric member)
DESCRIPTION OF SYMBOLS 3; Antenna room 4; Processing chamber 13; High frequency antenna 14; Matching device 15; High frequency power supply 16; Feeding member 19; Feeding line 20; Process gas supply system 22; Port 31; Exhaust piping 32; Automatic pressure control valve (APC)
33; vacuum pump 34; first opening baffle plate 35; second opening baffle plate 40; exhaust part 41; treatment region 42; exhaust region 50; partition member 34a, 50a, 52a; ground wire 52; Frontage 100; Control part G; Board

Claims (19)

基板を収容してプラズマ処理を施す処理室と、
前記処理室内で基板が載置される載置面を有する載置台と、
前記処理室内に処理ガスを供給する処理ガス供給系と、
前記処理室内を排気する排気部と、
前記載置台に載置された基板に対してプラズマ処理を行うためのプラズマを生成するプラズマ生成機構と、
前記載置台にバイアス用の高周波電力を印加するための高周波電源と、
前記処理室から前記排気部へ至る排気口部分またはその近傍に設けられた、複数の開口を有する第１の開口バッフル板および第２の開口バッフル板と
を有し、
前記第１の開口バッフル板は排気経路の下流側、前記第２の開口バッフル板は排気経路の上流側に設けられ、
前記第１の開口バッフル板および前記第２の開口バッフル板はいずれも導電性材料からなり、前記第１の開口バッフル板は接地され、前記第２の開口バッフル板は電気的にフローティング状態であり、
前記第１の開口バッフル板および前記第２の開口バッフル板は、これらの間に安定放電が生成可能な間隔で設けられていることを特徴とするプラズマ処理装置。 A processing chamber for accommodating a substrate and performing plasma processing;
A mounting table having a mounting surface on which a substrate is mounted in the processing chamber;
A processing gas supply system for supplying a processing gas into the processing chamber;
An exhaust section for exhausting the processing chamber;
A plasma generating mechanism for generating plasma for performing plasma processing on the substrate mounted on the mounting table;
A high frequency power source for applying a high frequency power for bias to the mounting table;
A first opening baffle plate and a second opening baffle plate having a plurality of openings provided in or near the exhaust port portion extending from the processing chamber to the exhaust unit;
The first opening baffle plate is provided on the downstream side of the exhaust path, and the second opening baffle plate is provided on the upstream side of the exhaust path,
The first opening baffle plate and the second opening baffle plate are both made of a conductive material, the first opening baffle plate is grounded, and the second opening baffle plate is in an electrically floating state. ,
The plasma processing apparatus, wherein the first opening baffle plate and the second opening baffle plate are provided at an interval between which a stable discharge can be generated. 前記第１の開口バッフル板は、前記排気部の排気配管の入口部分を覆うように設けられていることを特徴とする請求項１に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the first opening baffle plate is provided so as to cover an inlet portion of an exhaust pipe of the exhaust section. 前記第１の開口バッフル板と前記第２の開口バッフル板との間隔は、１〜１０ｍｍであることを特徴とする請求項１または請求項２に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1 or 2, wherein a distance between the first opening baffle plate and the second opening baffle plate is 1 to 10 mm. 前記第１の開口バッフル板および前記第２の開口バッフル板は、スリット状もしくはメッシュ状に構成されるか、または多数のパンチング孔を有することを特徴とする請求項１から請求項３のいずれか１項に記載のプラズマ処理装置。   The first opening baffle plate and the second opening baffle plate are configured in a slit shape or a mesh shape, or have a number of punching holes. 2. The plasma processing apparatus according to item 1. 前記第１の開口バッフル板および前記第２の開口バッフル板の開口率は、６１．５％以下であることを特徴とする請求項１から請求項４のいずれか１項に記載のプラズマ処理装置。   5. The plasma processing apparatus according to claim 1, wherein an opening ratio of the first opening baffle plate and the second opening baffle plate is 61.5% or less. 6. . 基板に対してプラズマ処理を行う処理領域と前記排気部に繋がる排気領域とに仕切る、導電性材料からなり開口部を有さない複数の仕切り部材をさらに有し、前記複数の仕切り部材は、接地電位に接続され、隣接するものどうしが、その間に、前記処理領域に供給された処理ガスを前記排気領域に導く間口が形成されるように離間して配置されていることを特徴とする請求項１から請求項５のいずれか１項に記載のプラズマ処理装置。   The apparatus further includes a plurality of partition members made of a conductive material and having no openings, which are divided into a processing region for performing plasma processing on the substrate and an exhaust region connected to the exhaust unit, wherein the plurality of partition members are grounded. The adjacent ones connected to the potential are arranged apart from each other so as to form a front opening for guiding the processing gas supplied to the processing region to the exhaust region. The plasma processing apparatus according to any one of claims 1 to 5. 前記仕切り部材と異なる高さ位置に、平面視した場合に前記間口の少なくとも一部を遮蔽するように設けられ、導電性材料からなるとともに開口部を有さず、かつ接地電位に接続された遮蔽部材をさらに有することを特徴とする請求項６に記載のプラズマ処理装置。   A shield that is provided at a different height from the partition member so as to shield at least a part of the frontage when viewed in plan, is made of a conductive material, has no opening, and is connected to a ground potential. The plasma processing apparatus according to claim 6, further comprising a member. 前記処理室は平面形状が矩形状の空間を有し、前記載置台は平面形状が矩形状をなし、矩形状の基板が載置されることを特徴とする請求項１から請求項７のいずれか１項に記載のプラズマ処理装置。   8. The method according to claim 1, wherein the processing chamber has a space having a rectangular planar shape, the mounting table has a rectangular planar shape, and a rectangular substrate is placed thereon. The plasma processing apparatus according to claim 1. 前記プラズマ生成機構は、前記処理領域に誘導結合プラズマを生成するため高周波アンテナを有することを特徴とする請求項１から請求項８のいずれか１項に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the plasma generation mechanism includes a high-frequency antenna for generating inductively coupled plasma in the processing region. 前記高周波アンテナは、前記処理室の上部に誘電体窓を介して設置されることを特徴とする請求項９に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 9, wherein the high-frequency antenna is installed in an upper part of the processing chamber via a dielectric window. 前記高周波アンテナは、前記処理室の上部に金属窓を介して設置されることを特徴とする請求項９に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 9, wherein the high-frequency antenna is installed on an upper portion of the processing chamber through a metal window. 基板を収容してプラズマ処理を施す処理室と、前記処理室内で基板が載置される載置面を有する載置台と、前記処理室内に処理ガスを供給する処理ガス供給系と、前記処理室内を排気する排気部と、前記載置台に載置された基板に対してプラズマ処理を行うためのプラズマを生成するプラズマ生成機構と、前記載置台にバイアス用の高周波電力を印加するための高周波電源とを有するプラズマ処理装置において、前記処理室に供給された処理ガスを前記排気部に導く排気構造であって、
前記処理室から前記排気部へ至る排気口部分またはその近傍に設けられた、複数の開口を有する第１の開口バッフル板および第２の開口バッフル板を有し、
前記第１の開口バッフル板は排気経路の下流側、前記第２の開口バッフル板は排気経路の上流側に設けられ、
前記第１の開口バッフル板および前記第２の開口バッフル板はいずれも導電性材料からなり、前記第１の開口バッフル板は接地され、前記第２の開口バッフル板は電気的にフローティング状態であり、
前記第１の開口バッフル板および前記第２の開口バッフル板は、これらの間に安定放電が生成可能な間隔で設けられていることを特徴とする排気構造。 A processing chamber for accommodating a substrate and performing plasma processing, a mounting table having a mounting surface on which the substrate is mounted in the processing chamber, a processing gas supply system for supplying a processing gas into the processing chamber, and the processing chamber An exhaust section for exhausting air, a plasma generation mechanism for generating plasma for performing plasma processing on a substrate placed on the mounting table, and a high-frequency power source for applying bias high-frequency power to the mounting table A plasma processing apparatus having an exhaust structure that guides the processing gas supplied to the processing chamber to the exhaust part,
A first opening baffle plate and a second opening baffle plate having a plurality of openings provided in or near the exhaust port portion extending from the processing chamber to the exhaust unit;
The first opening baffle plate is provided on the downstream side of the exhaust path, and the second opening baffle plate is provided on the upstream side of the exhaust path,
The first opening baffle plate and the second opening baffle plate are both made of a conductive material, the first opening baffle plate is grounded, and the second opening baffle plate is in an electrically floating state. ,
The exhaust structure according to claim 1, wherein the first opening baffle plate and the second opening baffle plate are provided at intervals at which stable discharge can be generated. 前記第１の開口バッフル板は、前記排気部の排気配管の入口部分を覆うように設けられていることを特徴とする請求項１２に記載の排気構造。   The exhaust structure according to claim 12, wherein the first opening baffle plate is provided so as to cover an inlet portion of an exhaust pipe of the exhaust section. 前記第１の開口バッフル板と前記第２の開口バッフル板との間隔は、１〜１０ｍｍであることを特徴とする請求項１２または請求項１３に記載の排気構造。   The exhaust structure according to claim 12 or 13, wherein an interval between the first opening baffle plate and the second opening baffle plate is 1 to 10 mm. 前記第１の開口バッフル板および前記第２の開口バッフル板は、スリット状もしくはメッシュ状に構成されるか、または多数のパンチング孔を有することを特徴とする請求項１２から請求項１４のいずれか１項に記載の排気構造。   The said 1st opening baffle board and the said 2nd opening baffle board are comprised in slit shape or mesh shape, or have many punching holes, The any one of Claims 12-14 characterized by the above-mentioned. The exhaust structure according to item 1. 前記第１の開口バッフル板および前記第２の開口バッフル板の開口率は、６１．５％以下であることを特徴とする請求項１２から請求項１４のいずれか１項に記載の排気構造。   The exhaust structure according to any one of claims 12 to 14, wherein an opening ratio of the first opening baffle plate and the second opening baffle plate is 61.5% or less. 基板に対してプラズマ処理を行う処理領域と前記排気部に繋がる排気領域とに仕切る、導電性材料からなり開口部を有さない複数の仕切り部材をさらに有し、前記複数の仕切り部材は、接地電位に接続され、隣接するものどうしが、その間に、前記処理領域に供給された処理ガスを前記排気領域に導く間口が形成されるように離間して配置されていることを特徴とする請求項１２から請求項１６のいずれか１項に記載の排気構造。   The apparatus further includes a plurality of partition members made of a conductive material and having no openings, which are divided into a processing region for performing plasma processing on the substrate and an exhaust region connected to the exhaust unit, wherein the plurality of partition members are grounded The adjacent ones connected to the potential are arranged apart from each other so as to form a front opening for guiding the processing gas supplied to the processing region to the exhaust region. The exhaust structure according to any one of claims 12 to 16. 前記仕切り部材と異なる高さ位置に、平面視した場合に前記間口の少なくとも一部を遮蔽するように設けられ、導電性材料からなるとともに開口部を有さず、かつ接地電位に接続された遮蔽部材をさらに有することを特徴とする請求項１７に記載の排気構造。   A shield that is provided at a different height from the partition member so as to shield at least a part of the frontage when viewed in plan, is made of a conductive material, has no opening, and is connected to a ground potential. The exhaust structure according to claim 17, further comprising a member. 前記処理室は平面形状が矩形状の空間を有し、前記載置台は平面形状が矩形状をなし、矩形状の基板が載置されることを特徴とする請求項１２から請求項１８のいずれか１項に記載の排気構造。   19. The method according to claim 12, wherein the processing chamber has a space having a rectangular planar shape, the mounting table has a rectangular planar shape, and a rectangular substrate is placed thereon. The exhaust structure according to claim 1.
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