CN106328473A - Plasma processing apparatus and exhaust structure thereof - Google Patents
Plasma processing apparatus and exhaust structure thereof Download PDFInfo
- Publication number
- CN106328473A CN106328473A CN201610516168.7A CN201610516168A CN106328473A CN 106328473 A CN106328473 A CN 106328473A CN 201610516168 A CN201610516168 A CN 201610516168A CN 106328473 A CN106328473 A CN 106328473A
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- open closure
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- process chamber
- processing apparatus
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- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000007667 floating Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 100
- 230000008569 process Effects 0.000 claims description 100
- 239000007789 gas Substances 0.000 claims description 67
- 238000005192 partition Methods 0.000 claims description 37
- 239000004568 cement Substances 0.000 claims description 24
- 239000002131 composite material Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 18
- 238000007599 discharging Methods 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000037361 pathway Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 238000004080 punching Methods 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 abstract description 7
- 210000002381 plasma Anatomy 0.000 description 97
- 239000007921 spray Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 230000001629 suppression Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
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- Engineering & Computer Science (AREA)
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- Plasma & Fusion (AREA)
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
When high-frequency high-frequency power is applied to the mounting table, it is effective to prevent plasma from entering the exhaust part and unstable discharge above the baffle plate. A plasma processing apparatus performs plasma processing while applying a high frequency bias to a placing table against a substrate G mounted on a placing surface of a placing table in a processing chamber. The plasma processing apparatus includes a first opening baffle (34) and a second opening baffle (35) provided at a portion of the exhaust port (30), wherein the first opening baffle (34) being provided on the downstream side of the exhaust path. The second opening baffle (35) is arranged on the upstream side of the exhaust path; the first opening baffle (34) is grounded, the second opening baffle (35) is in an electrically floating state, and the first and second opening baffles (34, 35) can provide a stable discharge interval between them.
Description
Technical field
The present invention relates to the plasma processing apparatus that substrate is carried out Cement Composite Treated by Plasma and the aerofluxus knot wherein used
Structure.
Background technology
In the manufacturing step of semiconductor device and flat faced display (FPD), exist and substrate is carried out plasma etching
Step with Cement Composite Treated by Plasma such as film forming process.
In such Cement Composite Treated by Plasma, use plasma-etching apparatus, plasma CVD film formation device etc. various
Plasma processing apparatus.When using plasma processing apparatus to carry out Cement Composite Treated by Plasma, substrate-placing is being arranged at
Keep, in the mounting table in the process chamber of vacuum, in process chamber, generating the plasma of regulation gas in such a state,
Substrate is implemented Cement Composite Treated by Plasma.
In plasma processing apparatus, in order to prevent the foreign body or the plasma that generate in the processing region in process chamber
Invading exhaust gas region, be usually provided with baffle plate (baffle plate), this baffle plate has by forming eyed structure or slot knot
The peristome of structure etc. and ensure that the structure (such as patent documentation 1) of aeration.
It addition, in patent documentation 1, the baffle plate with peristome is arranged with electrically floating state, and disclosed in patent documentation 2
Make the technology of such baffle plate ground connection.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 6-252245 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2010-238980 publication
Summary of the invention
Invention is wanted to solve the technical problem that
But, in such plasma processing apparatus, in order to lure the ion drawing in plasma efficiently, it is right to exist
Mounting table applies the situation of high-frequency bias.In the Cement Composite Treated by Plasma of large substrate, need to make such high-frequency bias for height
Power.
When like this mounting table being applied high-frequency bias, air vent becomes comparative electrode, can produce at air outlet portion
Capacitance coupling plasma.
In the case of baffle plate is in electrically floating state, owing to this plasma will not inactivate, therefore plasma enters
Exhaust portion, there is glow discharge in the inlet portion branch at pressure-control valve (APC), vacuum pump, parts produce and consume partly.
On the other hand, in the case of baffle plate ground connection, owing to plasma inactivates on baffle plate, therefore putting in exhaust portion
Electricity is suppressed.But, owing to occurring glow discharge, the electric discharge of exhaust space to become unstable on the baffle plate of ground connection everywhere.
Thus, problem of the invention is that, it is provided that a kind of in the case of mounting table is applied high-power RF power,
Can be effectively prevented plasma invade electric discharge above exhaust portion and baffle plate become unstable plasma processing apparatus and
The exhaust structure used in such plasma processing apparatus.
For solving the technical scheme of technical problem
For solving the problems referred to above, first aspect present invention provides a kind of plasma processing apparatus, it is characterised in that bag
Including: process chamber, it is used for receiving substrate and this substrate being implemented Cement Composite Treated by Plasma；Mounting table, it has at above-mentioned process chamber
The mounting surface of interior mounting substrate；To the treating-gas supply system of process gases at supply in above-mentioned process chamber；To above-mentioned process chamber
The exhaust portion being inside exhausted；Plasma generating mechanism, it generates for carrying out the substrate being positioned in above-mentioned mounting table
The plasma of Cement Composite Treated by Plasma；For above-mentioned mounting table being applied the high frequency electric source of biasing RF power；Be arranged on
From above-mentioned process chamber go to the air outlet portion of above-mentioned exhaust portion or its first open closure neighbouring, that there is multiple opening and
Second open closure, above-mentioned first open closure is arranged on the downstream of exhaust pathway, and above-mentioned second open closure is arranged on row
The upstream side in gas circuit footpath, above-mentioned first open closure and above-mentioned second open closure are constituted by conductive material, and above-mentioned first
Open closure is grounded, and above-mentioned second open closure is in electrically floating state, above-mentioned first open closure and above-mentioned second opening
Baffle plate is arranged with the interval that can generate stable discharging between which.
Exhaust structure in a kind of plasma processing apparatus of second aspect present invention, it is characterised in that: above-mentioned plasma
Body processing means includes: process chamber, and it is used for receiving substrate and this substrate being implemented Cement Composite Treated by Plasma；Mounting table, it has
The mounting surface of substrate is loaded in above-mentioned process chamber；To the treating-gas supply system of process gases at supply in above-mentioned process chamber；
To the exhaust portion being exhausted in above-mentioned process chamber；Plasma generating mechanism, it generates for being positioned in above-mentioned mounting table
On substrate carry out the plasma of Cement Composite Treated by Plasma；With the high frequency for above-mentioned mounting table being applied biasing RF power
Power supply, above-mentioned exhaust structure is fed into place's process gases of above-mentioned process chamber and guides to above-mentioned exhaust portion, above-mentioned exhaust structure bag
Include to be arranged on and go to the air outlet portion of above-mentioned exhaust portion from above-mentioned process chamber or it is neighbouring, first opening of having multiple opening
Mouth baffle plate and the second open closure, above-mentioned first open closure is arranged on the downstream of exhaust pathway, above-mentioned second open closure
It is arranged on the upstream side of exhaust pathway, above-mentioned first open closure and above-mentioned second open closure to be constituted by conductive material,
Above-mentioned first open closure is grounded, and above-mentioned second open closure is in electrically floating state, above-mentioned first open closure and above-mentioned
Second open closure is arranged with the interval that can generate stable discharging between which.
Above-mentioned first open closure is preferably configured to cover the intake section of the aerofluxus pipe arrangement of above-mentioned exhaust portion.Above-mentioned
One open closure is preferably spaced 1～10mm with above-mentioned second open closure.
Above-mentioned first open closure and above-mentioned second open closure can be configured to slot shape or mesh-shape, or have big
The punching of amount.
The aperture opening ratio of above-mentioned first open closure and above-mentioned second open closure is preferably less than 61.5%.
And such structure can be used, i.e. also include that be made up of conductive material does not has the multiple of peristome
Partition member, the plurality of partition member is separated out and substrate carries out the processing region of Cement Composite Treated by Plasma and connects with above-mentioned exhaust portion
Logical exhaust gas region, above-mentioned multiple partition members are connected with earthing potential, adjacent partition member configure separated from one anotherly with
The place's process gases guiding being fed into above-mentioned processing region is formed to the space of above-mentioned exhaust gas region between them.In the case of Gai excellent
Choosing also includes coverage parts that be made up of, that do not have peristome and be connected with earthing potential, this coverage portion conductive material
Part on the height and position different from above-mentioned partition member to cover at least one of side in above-mentioned space in a top view
Formula is arranged.
Such structure can also be used, i.e. above-mentioned process chamber has the space that plan view shape is rectangle, above-mentioned mounting table
Plan view shape rectangular, for loading the substrate of rectangle.
Above-mentioned plasma generating mechanism can include for generating inductively coupled plasma in above-mentioned processing region
High frequency antenna.Above-mentioned high frequency antenna can be arranged on the top of above-mentioned process chamber across dielectric window, it is also possible to across metal
Window is arranged on the top of above-mentioned process chamber.
Invention effect
According to the present invention, going to the air outlet portion of exhaust portion from process chamber or arranging with the state of ground connection near it
One open closure, and in its exhaust path upstream side, the second open closure is set with electrically floating state, and, open first
Mouthful baffle plate and the second open closure configure with the interval forming the degree of stable discharging between which, it is possible to suppression etc. from
Daughter leaks into exhaust portion, and can suppress the unstable glow discharge above baffle plate, generates stable in process chamber
Plasma.
Accompanying drawing explanation
Fig. 1 is the vertical cross-section diagram of the plasma processing apparatus representing an embodiment of the present invention.
Fig. 2 is the horizontal sectional view of the plasma processing apparatus representing an embodiment of the present invention.
Fig. 3 is the sectional view of the details of the exhaust portion of the plasma processing apparatus representing an embodiment of the present invention.
Fig. 4 is the figure of the structure example representing the first and second open closure.
Fig. 5 is the horizontal sectional view of another example of the configuration representing air vent.
Fig. 6 is to represent the schematic diagram that mounting table applies produce the situation of capacitance coupling plasma during high-frequency bias.
Fig. 7 is the action effect in the case of the open closure being provided with two-stage for illustrating in present embodiment
Figure.
Fig. 8 is the figure of the plasma processing apparatus representing variation, and (a) is horizontal sectional view, and (b) is to represent separating part
The axonometric chart of the position relationship of part and coverage parts.
Description of reference numerals
1: main body container
2: dielectric walls (dielectric members)
3: antenna chamber
4: process chamber
13: high frequency antenna
14: adapter
15: high frequency electric source
16: power supply part
19: supply lines
20: treating-gas supply system
22: terminal
23: mounting table
27: biasing high frequency electric source
30: air vent
31: aerofluxus pipe arrangement
32: automatic pressure control valve (APC)
33: vacuum pump
34: the first open closure
35: the second open closure
40: exhaust portion
41: processing region
42: exhaust gas region
50: partition member
34a, 50a, 52a: earth lead
52: cover parts
60: space
100: control portion
G: substrate.
Detailed description of the invention
Referring to the drawings embodiment of the present invention is illustrated.Fig. 1 be the grade representing an embodiment of the present invention from
The vertical cross-section diagram of daughter processing means, Fig. 2 is its horizontal sectional view, and Fig. 3 is the sectional view of the details representing exhaust portion.
The plasma processing apparatus of present embodiment is configured to inductance coupling plasma processing device, this inductive
Plasma processing apparatus generates inductively coupled plasma, the such as FPD such rectangular substrate of glass substrate is carried out
The inductively coupled plasmas such as etch processes or ashing process process.
This plasma processing apparatus has and is made up of through the aluminum of anodized conductive material, such as internal face
The airtight main body container 1 of square tube shape.This main body container 1 is assembled by decomposable asymmetric choice net, by earth lead 1a ground connection.Main body container 1
It is divided into antenna chamber 3 and process chamber 4 by dielectric walls about 2.Dielectric walls 2 constitutes the roof of process chamber 4.Dielectric walls 2 by
Al2O3Constitute etc. ceramic, quartzy etc..
Between the sidewall 3a and the sidewall 4a of process chamber 4 of the antenna chamber 3 on main body container 1, it is provided with inside side and highlights
Bearing support 5, dielectric walls 2 is positioned on this bearing support 5.
The spray housing 11 of place's process gases supply it is embedded with in the lower portion of dielectric walls 2.Spray housing 11 is arranged
Crosswise, form the structure of support dielectric wall 2 from below, such as girder construction.Further, the spray of above-mentioned dielectric walls 2 is supported
Drench housing 11 to be formed as being suspended on the state on the ceiling of main body container 1 by many suspension rods (not shown).Bearing support 5 and spray shell
Body 11 can also be covered by dielectric members.
This spray housing 11 is by the preferred metal of conductive material, such as in order to not produce pollutant and within it surface and outer
Surface has carried out the aluminum of anodized and has constituted.This spray housing 11 is formed horizontal-extending gas flow path 12, this gas
Body stream 12 connects with the multiple gas squit hole 12a extended downwards.On the other hand, in the upper face center of dielectric walls 2,
It is provided with gas supply pipe 20a in the way of connecting with this gas flow path 12.Gas supply pipe 20a is from the ceiling of main body container 1
Through outside it, it is connected with the treating-gas supply system 20 including place process gases supply source and valve system etc..Thus, wait
During gas ions processes, at treating-gas supply system 20 supply, process gases supplies to spray housing through gas supply pipe 20a
In 11, and it is ejected in process chamber 4 from the gas squit hole 12a of its lower surface.
High frequency (RF) antenna 13 it is provided with in antenna chamber 3.High frequency antenna 13 is by by the good gold of the electric conductivity such as copper or aluminum
Belong to the antenna wire 13a constituted to be configured to arbitrary shape that ring-type or helical form etc. uses all the time and constitute.Can also
It it is the multiple antenna with multiple antenna part.
The terminal 22 of antenna wire 13a is connected with the power supply part 16 extended above to antenna chamber 3.Power supply part 16
Upper end is connected with high frequency electric source 15 by supply lines 19.It addition, adapter 14 also can be provided with on supply lines 19.Additionally, high frequency
Antenna 13 utilizes the sept 17 being made up of insulating element to leave from dielectric walls 2.So, by from high frequency electric source 15 to high frequency
It is the RF power of 13.56MHz that antenna 13 supplies such as frequency, forms induction field in process chamber 4, supplies from spray housing 11
The place's process gases given is plasmarized because of this induction field, generates inductively coupled plasma.
On diapire 4b in process chamber 4, by the way of dielectric walls 2 is relative with high frequency antenna 13, through insulator
Parts 24 are fixed with mounting table 23, and wherein this mounting table 23 has the mounting surface for loading rectangular substrate G.Dielectric member 24
In the shape of a frame.Mounting table 23 includes main body 23a being made up of conductive material, such as surface through the aluminum of anodized, and with
Insulator frame 23b that the mode of the periphery surrounding main body 23a is arranged.The substrate G being positioned in mounting table 23 is by electrostatic chuck
(not shown) absorption keeps.
In mounting table 23, insert be through with for moving into and taking out of base through the diapire of main body container 1, dielectric member 24
The lifter pin (not shown) of plate G.Lifter pin is driven by elevating mechanism (not shown) lifting being arranged on outside main body container 1 and carries out
Substrate G moving into and taking out of.It addition, mounting table 23 can also have the structure that can be lifted by elevating mechanism.
Main body 23a of mounting table 23 is connected to biasing high frequency electric source 27 by the matched device of supply lines 25 26.This high frequency
Power supply 27 applies high-frequency bias (biasing RF power) to mounting table in Cement Composite Treated by Plasma.The frequency of high-frequency bias is such as
For 6MHz.Under the effect of this biasing RF power, the ion in the plasma generated in process chamber 4 is lured to draw efficiently
To substrate G.
It addition, in mounting table 23, be provided with to control the temperature of substrate G by heating arrangements such as ceramic heaters or
The temperature control device of the composition such as refrigerant flow path and temperature sensor (the most not shown).
Additionally, mounting table 23 is configured to, form cooling space (not shown) when having loaded substrate G in its rear side, and
And mounting table 23 connects the He gas having for this cooling space supplies the He gas as heat transfer gas using authorized pressure
Body stream 28.By like this rear side of substrate G being supplied heat transfer gas, it is possible to realize the good of substrate G under vacuo
Good temperature control.
The bottom center of the diapire 4b of process chamber 4 is formed with peristome 4c, supply lines 25, He gas flow path 28 and temperature control
The pipe arrangement of mechanism processed, distribution export to outside main body container 1 through peristome 4c.
On in four sidewall 4a of process chamber 4 one, it is provided with the carrying-in/carrying-out mouth for moving into and take out of substrate G
29a and it is carried out the gate valve 29 of opening and closing.
Between inwall (inboard portion of sidewall 4a) and the mounting table 23 of process chamber 4, it is provided with and separates in process chamber 4
For processing region 41 and 4 partition members 50 of exhaust gas region 42.Partition member 50 use in the rectangle without peristome,
The sheet material formed by conductive materials such as metals is constituted.Each partition member 50 is arranged in correspondence with each side of mounting table 23,
Grounded line 50a is connected to earthing potential.Alternatively, it is also possible to make partition member 50 and sidewall 4a be electrically connected so that, it holds through main body
Device 1 ground connection.
Adjacent partition member 50 configures separated from one anotherly, to form the gas making to be supplied to processing region 41 between which
Body is directed to the space 60 of exhaust gas region, and space 60 is present in partition member 50 and forms four corners in face.
Processing region 41 is to be positioned at the region on partition member 50 in process chamber 4, is for being formed for carrying out substrate G
The region of the inductively coupled plasma of Cement Composite Treated by Plasma.It addition, exhaust gas region 42 is to be positioned at partition member 50 in process chamber 4
Under region, be for importing from place's process gases of processing region 41 region that discharges it.
Being respectively arranged with air vent 30 in four corners of the diapire 4b of process chamber 4, each air vent 30 is provided with exhaust portion
40.Exhaust portion 40 includes: the aerofluxus pipe arrangement 31 being connected with air vent 30；Control to process by the aperture adjusting aerofluxus pipe arrangement 31
The automatic pressure control valve (APC) 32 of the pressure in room 4；With in aerofluxus pipe arrangement 31 is to process chamber 4 vacuum pump of aerofluxus
33.So, utilize vacuum pump 33 to aerofluxus in process chamber 4, in Cement Composite Treated by Plasma, adjust automatic pressure control valve (APC)
The aperture of 32 will set and be maintained at the vacuum atmosphere of regulation in process chamber 4.
As it is shown on figure 3, in air vent 30 part, be provided with first in the way of covering the intake section of aerofluxus pipe arrangement 31 and open
Mouthful baffle plate 34, above the first open closure 34, (i.e. the upstream side of exhaust pathway) leaves the position of specific length, with the
The relative mode of one open closure 34 is provided with the second open closure 35.That is, air vent 30 is provided with upper and lower two-layer configuration
Open closure.First open closure 34 and the second open closure 35 are made up of conductive materials such as metals, have substantial amounts of opening,
Such as in the slot shape shown in (a) of Fig. 4, or the mesh-shape shown in (b) of Fig. 4, or shown in (c) of Fig. 4, there is a large amount of punching
The structure in hole.
First open closure 34 is arranged on the insulating element 36 of the inner circumferential constituting aerofluxus pipe arrangement 31 top, passes through earth lead
34a ground connection.It addition, be provided with insulation spacer 37 in the form of a ring between the first open closure 34 and the second open closure 35, the
Two open closure 35 are electrically floating state.Such two-stage open closure is joined with the interval that can realize stable discharging between which
Put.Utilize the first open closure 34 and the second open closure 35, as described later, it is possible to suppression plasma leakage is to exhaust portion
40, and stable plasma can be formed.
Between automatic pressure control valve (APC) 32 and vacuum pump 33, it is provided with for preventing foreign body from invading vacuum pump 33
Grid mesh part 38.Grid mesh part 38 is made up of conductive materials such as metals, and is grounded.
The preferred scope at the interval of the first open closure 34 and the second open closure 35 is 1～10mm.It addition, the first opening
The aperture opening ratio of baffle plate 34 and the second open closure 35 is preferably less than 61.5%.
Additionally, the quantity of air vent 30 and position adapt to according to the size of device set.For example, it is also possible to such as Fig. 5
Shown in horizontal sectional view, air vent 30 is arranged by twos along each sidewall 4a of process chamber 4, arranges 8 altogether.
The plasma processing apparatus of present embodiment includes the control portion 100 being made up of microprocessor (computer), uses
Family interface 101 and storage part 102.Each structural portion of control portion 100 plasma processing means, such as valve, high frequency electric source, true
Empty pumps etc. send instruction, are controlled them.User interface 101 includes carrying out processing for managing plasma for operator
The keyboard of the input operation of the instruction input etc. of device, the working condition of plasma processing apparatus is visualized the display of display
Devices etc., are connected with control portion 100.Storage part 102 storage has for utilizing the control in control portion 100 to realize Cement Composite Treated by Plasma
The control program of the various process performed in device, for making each structural portion of plasma processing apparatus according to treatment conditions
The program i.e. processing scheme that execution processes, is connected with control portion 100.Processing scheme is stored in the storage medium in storage part 102
On.Storage medium can be hard disk, the semiconductor memory being built in computer, it is also possible to be that CDROM, DVD, flash memory etc. can
Move media.Alternatively, it is also possible to suitably from other device through such as special circuit transmission plan.So, as desired by
Instruction etc. from user interface 101 calls arbitrary processing scheme from storage part 102, makes control portion 100 perform the program, from
And under the control in control portion 100, perform the desired process in plasma processing apparatus.
Then, illustrate to use the above plasma processing apparatus constituted that substrate G implements Cement Composite Treated by Plasma, such as etc.
Process action when plasma or plasma ashing.
First, when opening gate valve 29, utilize carrying mechanism (not shown) by substrate G from carrying-in/carrying-out mouth 29a
Move in process chamber 4, be positioned in the mounting surface of mounting table 23, utilize electrostatic chuck (not shown) to be fixed on by substrate G afterwards
In mounting table 23.Then, from treating-gas supply system 20 through spray housing 11 gas squit hole 12a to process chamber 4 in confession
Give place's process gases, and utilize vacuum pump 33 to join through aerofluxus while utilizing automatic pressure control valve (APC) 32 to control pressure
Pipe 31 to carrying out vacuum exhaust in process chamber 4, will maintain such as 0.66～about 26.6Pa from air vent 30 in process chamber
Pressure atmosphere.
It addition, now rise and variations in temperature, through the He gas flow path 28 back of the body to substrate G in order to avoid the temperature of substrate G
The cooling space supply of side, face is as the He gas of heat transfer gas.
Then, from high frequency electric source 15, high frequency antenna 13 is applied the RF power of such as 13.56MHz, is thus situated between across electricity
Matter wall 2 forms uniform induction field in process chamber 4.Under the effect of the induction field so formed, place's process gases is at place
Reason room 4 in plasmarized, generate highdensity inductively coupled plasma.Utilize this plasma substrate G is carried out etc. from
Daughter processes, such as, the film of the regulation of substrate G is carried out plasma etching or plasma ashing.Now, as high frequency deviation
Put that simultaneously from high frequency electric source 27, mounting table 23 to be applied such as frequency be the RF power of 6MHz, by generate in process chamber 4 etc.
Ion in gas ions lures efficiently guides to substrate G.
Place's process gases processing region 41 plasma in process chamber 4 and after being provided to Cement Composite Treated by Plasma,
Aspirated by vacuum pump 33 and arrive exhaust gas region 42 from the space 60 being formed between adjacent partition member 50, from air vent 30
It is discharged through aerofluxus pipe arrangement 31.
By mounting table 23 is applied high-frequency bias, as shown in Figure 6, near with the inwall of process chamber 4 and air vent 30
The electric conductor being grounded, as comparative electrode, produces capacitance coupling plasma.Now, it is the situation of large substrate at substrate G
Under, need mounting table 23 is applied high-power RF power, if comparative electrode is less, electric arc can be produced, electrically become
Unstable.Therefore, on the position between inwall (inboard portion of sidewall 4a) and the mounting table 23 of process chamber 4, will not have
Multiple partition members 50 ground connection of peristome arranges and makes it play a role as comparative electrode, true by expanding comparative electrode
Protect electric stability.It addition, be formed with the space 60 passing to exhaust gas region 42 between adjacent partition member 50, also utilize and divide
Every the control that parts 50 are exhausted.
But, even if arranging the partition member 50 of multiple ground connection like this, according to the difference for the treatment of conditions, when passing through vacuum
The suction of pump 33 and make plasma attracted near air vent 30, and this plasma to invade exhaust portion 40 internal
Time, near automatic pressure control valve (APC) 32, luminescence (electric arc) is such as produced because of electric discharge, the anode oxide film on its surface,
Grid mesh part 38 on vacuum pump 33 can produce consumption.
To this, as shown in (a) of Fig. 7, if only arrange the first open closure 34 of ground connection at air vent 30, then due to wait from
Daughter inactivates in the first open closure 34, so plasma is suppressed to the intrusion of exhaust portion 40, it is possible to suppress certainly
The luminescence (electric arc) produced because of electric discharge near dynamic pressure control valve (APC) 32.But, in process chamber 4, earthing potential produces partially
Leaning on, there is unstable glow discharge in its upper area, occurs because of the flicker caused of discharging everywhere, the plasma in process chamber 4
Body becomes unstable.
On the other hand, as shown in (b) of Fig. 7, if only arrange the second open closure 35 of electrically floating state at air vent 30,
It is then plasma potential due to the second open closure 35, so its upper area will not occur the glow discharge of instability.No
Cross, owing to plasma will not inactivate in the second open closure 35 of electrically floating state, so can not be effectively prevented etc. from
Daughter invades exhaust portion 40, it is impossible to the luminescence (electricity fully produced because of electric discharge near suppression automatic pressure control valve (APC) 32
Arc).
Therefore, in the present embodiment, as shown in (c) of Fig. 7, by the first open closure 34 of the ground connection of subordinate side and upper
Second open closure 35 of the electrically floating state of level side (upstream side of exhaust pathway), can realize stable discharging between which
Be set to two-stage.That is, the second open closure 35 of electrically floating state is plasma potential, in the first gear with ground connection
Potential difference is produced between plate.Therefore, by suitably adjusting the interval between these open closure, formed stable between which
Electric discharge, plasma is kept.So, ion and electronics through the second open closure 35 are fettered by this plasma.Thus,
Can speculate and define, between the first open closure 34 and the second open closure 35, the stable glow discharge not flashed.It addition,
The plasma being attracted to air vent 30 inactivates in the first open closure 34 of subordinate side, it is possible to suppression is at automatic pressure
The luminescence (electric arc) produced because of electric discharge near control valve (APC) 32.Additionally, due to the second open closure 35 of higher level side is
Gas ions current potential, so the bias of the earthing potential of process chamber 4 is relaxed.Then, under such effect, it is possible at place
Stable plasma is generated in reason room 4.
Now, the interval of the first open closure 34 and the second open closure 35 is provided as before for giving birth between which
Become the interval of the degree of stable discharging.If being spaced excessive, then can not produce stable discharging between them, it is difficult to suppression is ground connection
The phenomenon of the glow discharge of instability is there is in first open closure 34.And if their interval too small, then cannot utilize first
Open closure 34 makes plasma fully inactivate, it is difficult to prevent plasma from invading exhaust portion 40.From such a viewpoint,
One open closure 34 and the interval preferably 1 of the second open closure 35～the scope of 10mm.
It addition, to obtain the effect fettered by plasma, with in the first open closure 34 and the second open closure 35
Between form stable electric discharge the viewpoint of effect set out, the aperture opening ratio of the first open closure 34 and the second open closure 35 is preferred
Less than 61.5%.
So, according to present embodiment, in air vent 30 part, in the way of covering the intake section of aerofluxus pipe arrangement 31,
First open closure 34 is set with the state of ground connection, and arranges second in its exhaust path upstream side with electrically floating state and open
Mouthful baffle plate 35, and, by the first open closure 34 and the second open closure 35 to form the degree of stable discharging between which
Interval configuration, it is possible to suppression plasma leakage is to exhaust portion 40, and instability above baffle plate can be suppressed
Glow discharge, generates stable plasma in process chamber 4.
Then modified embodiment of the present embodiment is illustrated.(a) of Fig. 8 is the Cement Composite Treated by Plasma dress representing variation
The horizontal sectional view put, (b) of Fig. 8 is to represent that the partition member in this plasma processing apparatus closes with the position covering parts
The axonometric chart of system.This plasma processing apparatus is except the lower orientation in the space 60 being formed between adjacent partition member 50
Install the structure being equipped with outside coverage parts 52, as using with the plasma processing apparatus of Fig. 1.
Covering parts 52 uses the sheet material formed by conductive materials such as metals to be constituted, and is arranged respectively at process chamber 4
Four corners between inwall (inboard portion of sidewall 4a) and mounting table 23, and it is positioned at the lower position of partition member 50.Hide
Cover parts 52 and be configured to when overlooking that it is at least partially the most overlapping with partition member 50, space 60 is covered.Further, parts are covered
52 are connected to earthing potential by earth lead 52a.Coverage parts 52 can also be made through main body container 1 or partition member 50 ground connection.
Like this, by the lower position of partition member 50 to arrange the coverage portion of ground connection by the way of being covered in space 60
Part 52, can cover exhaust pathway relative to the plasma being present in processing region 41, it is possible to suppression plasma is inhaled
Cause air vent 30.
Even if it addition, space 60 is not blacked out but covers the part in space 60 by coverage parts 52, it is also possible to obtain
Obtain a certain degree of coverage effect.Further, as long as covering parts 52 to be arranged on the height and position different from partition member 50,
The top position of partition member 50 can also be arranged on.
Additionally, this invention is not limited to above-mentioned embodiment, various deformation can be there is.Such as, in the above-described embodiment,
Illustrate, as device for processing inductive coupling plasmas, on the top of process chamber, dielectric window to be provided with high frequency antenna
Situation, but also being able to be applicable to is not across dielectric window but to be provided with the situation of high frequency antenna across metal window.These feelings
Under condition, the supply of place's process gases can not supply from criss-cross spray housings such as girder constructions, but arranges on metal window
Gas shower portion carrys out supply gas.
It addition, in the above-described embodiment, illustrate the electricity relatively of mounting table for being applied in biasing RF power
The device for processing inductive coupling plasmas that the area of pole is less, the situation that the present invention can particularly effectively apply, but not
It is limited to this, as long as the plasma processing apparatus that mounting table is applied in biasing RF power just can be applied, even if such as
It is the use of the capacitively coupled (parallel plate-type) etc. that the area of the plasma processing apparatus of microwave or comparative electrode is bigger
Gas ions processing means also is able to application.
It addition, in the above-described embodiment, illustrate the first open closure and the second open closure are arranged on air vent
The example of part, but it is not limited to this, it is also possible to it is arranged on the vicinity of air vent.It addition, the first open closure need not necessarily cover
The intake section of aerofluxus pipe arrangement, can suppress plasma leakage to the position of exhaust portion as long as being arranged in.Additionally, also
Can between inwall (inboard portion of sidewall 4a) and the mounting table 23 of process chamber 4 whole arrange the first open closure and
Second open closure.
It addition, in the above-described embodiment, the space between illustrating adjacent partition member is formed at process chamber
The example in four corners, but it is not limited to this.
It addition, in the above-described embodiment, illustrate to be applied to the first and second open closure the hole portion of exhaust gear
The example divided, but as long as being observation panel, substrate carrying-in/carrying-out mouth etc., being arranged on the process container of plasma processing apparatus
Opening just can be applied.
Additionally, above-mentioned embodiment illustrates apply the present invention to carry out plasma etching and plasma ashing
Device in situation, but can also apply to other plasma processing apparatus such as CVD film forming.It addition, above-mentioned embodiment party
In formula, illustrate to use as substrate the example of FPD rectangular substrate, but can also apply to the rectangular substrate to other and carry out
Situation about processing, and it is not limited to rectangle, such as can also apply to the circular substrates such as semiconductor crystal wafer.
Claims (19)
1. a plasma processing apparatus, it is characterised in that including:
Process chamber, it is used for receiving substrate and this substrate being implemented Cement Composite Treated by Plasma；
Mounting table, it has the mounting surface loading substrate in described process chamber；
To the treating-gas supply system of process gases at supply in described process chamber；
To the exhaust portion being exhausted in described process chamber；
Plasma generating mechanism, its generate for the substrate being positioned in described mounting table carried out Cement Composite Treated by Plasma etc.
Gas ions；
For described mounting table being applied the high frequency electric source of biasing RF power；With
Be arranged on from described process chamber go to the air outlet portion of described exhaust portion or it is neighbouring, there is multiple opening first
Open closure and the second open closure,
Described first open closure is arranged on the downstream of exhaust pathway, and described second open closure is arranged on the upper of exhaust pathway
Trip side,
Described first open closure and described second open closure are constituted by conductive material, and described first open closure is connect
Ground, described second open closure is in electrically floating state,
Described first open closure and described second open closure are arranged with the interval that can generate stable discharging between which.
2. plasma processing apparatus as claimed in claim 1, it is characterised in that:
Described first open closure is configured to cover the intake section of the aerofluxus pipe arrangement of described exhaust portion.
3. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that:
Described first open closure is spaced apart 1～10mm with described second open closure.
4. the plasma processing apparatus as according to any one of claims 1 to 3, it is characterised in that:
Described first open closure and described second open closure are configured to slot shape or mesh-shape, or have substantial amounts of punching
Hole.
5. the plasma processing apparatus as according to any one of Claims 1 to 4, it is characterised in that:
The aperture opening ratio of described first open closure and described second open closure is less than 61.5%.
6. the plasma processing apparatus as according to any one of Claims 1 to 5, it is characterised in that:
Also including the multiple partition members without peristome being made up of conductive material, it is right that the plurality of partition member is separated out
Processing region that substrate carries out Cement Composite Treated by Plasma and the exhaust gas region connected with described exhaust portion, the plurality of partition member with
Earthing potential connects, and adjacent partition member configures to be formed between which separated from one anotherly and is fed into described processing region
Place process gases guide the space to described exhaust gas region.
7. plasma processing apparatus as claimed in claim 6, it is characterised in that:
Also include coverage parts that be made up of, that not there is peristome and be connected with earthing potential, this coverage conductive material
Parts on the height and position different from described partition member to cover at least one of mode in described space in figure of bowing
Arrange.
8. the plasma processing apparatus as according to any one of claim 1～7, it is characterised in that:
Described process chamber has the space that plan view shape is rectangle, and the plan view shape of described mounting table is rectangular, is used for loading square
The substrate of shape.
9. the plasma processing apparatus as according to any one of claim 1～8, it is characterised in that:
Described plasma generating mechanism includes the high frequency sky for generating inductively coupled plasma in described processing region
Line.
10. plasma processing apparatus as claimed in claim 9, it is characterised in that:
Described high frequency antenna is arranged on the top of described process chamber across dielectric window.
11. plasma processing apparatus as claimed in claim 9, it is characterised in that:
Described high frequency antenna is arranged on the top of described process chamber across metal window.
Exhaust structure in 12. 1 kinds of plasma processing apparatus, it is characterised in that:
Described plasma processing apparatus includes:
Process chamber, it is used for receiving substrate and this substrate being implemented Cement Composite Treated by Plasma；
Mounting table, it has the mounting surface loading substrate in described process chamber；
To the treating-gas supply system of process gases at supply in described process chamber；
To the exhaust portion being exhausted in described process chamber；
Plasma generating mechanism, its generate for the substrate being positioned in described mounting table carried out Cement Composite Treated by Plasma etc.
Gas ions；With
For described mounting table being applied the high frequency electric source of biasing RF power,
Described exhaust structure is fed into place's process gases of described process chamber and guides to described exhaust portion,
Described exhaust structure includes being arranged on goes to the air outlet portion of described exhaust portion or its neighbouring, tool from described process chamber
There are the first open closure and second open closure of multiple opening,
Described first open closure is arranged on the downstream of exhaust pathway, and described second open closure is arranged on the upper of exhaust pathway
Trip side,
Described first open closure and described second open closure are constituted by conductive material, and described first open closure is connect
Ground, described second open closure is in electrically floating state,
Described first open closure and described second open closure are arranged with the interval that can generate stable discharging between which.
13. exhaust structures as claimed in claim 12, it is characterised in that:
Described first open closure is configured to cover the intake section of the aerofluxus pipe arrangement of described exhaust portion.
14. exhaust structures as described in claim 12 or 13, it is characterised in that:
Described first open closure is spaced apart 1～10mm with described second open closure.
15. exhaust structures as according to any one of claim 12～14, it is characterised in that:
Described first open closure and described second open closure are configured to slot shape or mesh-shape, or have substantial amounts of punching
Hole.
16. exhaust structures as according to any one of claim 12～14, it is characterised in that:
The aperture opening ratio of described first open closure and described second open closure is less than 61.5%.
17. exhaust structures as according to any one of claim 12～16, it is characterised in that:
Also including the multiple partition members without peristome being made up of conductive material, it is right that the plurality of partition member is separated out
Processing region that substrate carries out Cement Composite Treated by Plasma and the exhaust gas region connected with described exhaust portion, the plurality of partition member with
Earthing potential connects, and adjacent partition member configures to be formed between which separated from one anotherly and is fed into described processing region
Place process gases guide the space to described exhaust gas region.
18. exhaust structures as claimed in claim 17, it is characterised in that:
Also include coverage parts that be made up of, that not there is peristome and be connected with earthing potential, this coverage conductive material
Parts on the height and position different from described partition member to cover at least one of side in described space in a top view
Formula is arranged.
19. exhaust structures as according to any one of claim 12～18, it is characterised in that:
Described process chamber has the space that plan view shape is rectangle, and the plan view shape of described mounting table is rectangular, is used for loading square
The substrate of shape.
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| JP2015-132475 | 2015-07-01 | ||
| JP2015132475A JP6548484B2 (en) | 2015-07-01 | 2015-07-01 | Plasma processing apparatus and exhaust structure used therefor |
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| CN106328473B CN106328473B (en) | 2018-11-13 |
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| JP (1) | JP6548484B2 (en) |
| KR (1) | KR101925972B1 (en) |
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| CN111952141A (en) * | 2019-05-16 | 2020-11-17 | 东京毅力科创株式会社 | Plasma processing apparatus |
| TWI747323B (en) * | 2019-06-20 | 2021-11-21 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma processing equipment and plasma processing system including plasma processing equipment |
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| JP6630649B2 (en) | 2016-09-16 | 2020-01-15 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
| JP6804392B2 (en) * | 2017-06-05 | 2020-12-23 | 東京エレクトロン株式会社 | Plasma processing equipment and gas shower head |
| WO2019053836A1 (en) * | 2017-09-14 | 2019-03-21 | 株式会社日立ハイテクノロジーズ | Plasma processing device and wet cleaning method |
| JP7308711B2 (en) * | 2019-09-26 | 2023-07-14 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP7418285B2 (en) | 2020-05-27 | 2024-01-19 | 東京エレクトロン株式会社 | Substrate processing equipment, its manufacturing method, and exhaust structure |
| JP2022078684A (en) | 2020-11-13 | 2022-05-25 | 東京エレクトロン株式会社 | Plasma processing apparatus, manufacturing method thereof, and plasma processing method |
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| CN111952141A (en) * | 2019-05-16 | 2020-11-17 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN111952141B (en) * | 2019-05-16 | 2023-11-21 | 东京毅力科创株式会社 | Plasma processing apparatus |
| TWI747323B (en) * | 2019-06-20 | 2021-11-21 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma processing equipment and plasma processing system including plasma processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6548484B2 (en) | 2019-07-24 |
| CN106328473B (en) | 2018-11-13 |
| JP2017017180A (en) | 2017-01-19 |
| KR101925972B1 (en) | 2018-12-06 |
| TW201717277A (en) | 2017-05-16 |
| KR20170004888A (en) | 2017-01-11 |
| TWI702650B (en) | 2020-08-21 |
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