JP2004356511A - Plasma treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize both uniformity of plasma treatment and improvement of ignitability of plasma by reducing a capacity coupling element between a high frequency antenna and plasma. <P>SOLUTION: In an inductive plasma etching device having a dielectric wall 20 which separates a treatment chamber 40 for performing plasma treatment for a treatment substrate G from an inductively coupled antenna 60 forming an induction field inside the treatment chamber 40, uniformity of plasma inside the treatment chamber 40 is improved by reducing capacity coupling by arranging the inductively coupled antenna 60 in a position away from the dielectric wall 20, and ignition of plasma is supplemented by disposing a capacity pattern 50 connected to the inductively coupled antenna 60 via an electric circuit 100 including a capacitor C5 on the dielectric wall 20. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma processing apparatus that performs plasma processing on a substrate to be processed, such as a flat panel display (FPD) substrate, using inductively coupled plasma.
[0002]
[Prior art]
For example, in a manufacturing process of a liquid crystal display (LCD), which is a kind of flat panel display, plasma processing such as etching, sputtering, and CVD (chemical vapor deposition) is frequently used on an LCD glass substrate as a substrate to be processed. Have been.
[0003]
Various types of plasma processing apparatuses are used for performing such plasma processing. Among them, an inductively coupled plasma (ICP) processing apparatus is known as a type capable of generating high-density plasma. Has been.
[0004]
As disclosed in Patent Literature 1, an inductively coupled plasma processing apparatus typically includes a dielectric wall on a ceiling of a processing chamber for performing plasma processing that can be maintained in a vacuum, and a high frequency An (RF) antenna is provided. When high-frequency power is supplied to the high-frequency antenna, an induction electric field is formed in the processing chamber, and the processing gas introduced into the processing chamber is turned into plasma by the induction electric field. Plasma processing such as etching is performed by the plasma.
[0005]
By the way, for the substrate to be processed (LCD glass substrate) processed in the LCD manufacturing process, a plurality of, for example, nine LCD panel products are usually obtained from one substrate for the purpose of improving production efficiency and the like. It is set to the size that can be done. Therefore, the dimensions of the LCD glass substrate, which is the substrate to be processed, are considerably larger than those of commercially available LCDs. Further, in recent years, the size of an LCD glass substrate as a substrate to be processed has been increasing with the enlargement of the LCD itself (screen size). For example, a huge LCD glass substrate having a side of 2 m has been used. Has appeared.
[0006]
For this reason, an inductively coupled plasma processing apparatus for processing an LCD glass substrate has also been increased in size, and accordingly, a high-frequency antenna has also been increased in size.
[0007]
[Patent Document 1]
JP-A-7-106316
[Problems to be solved by the invention]
By the way, when the high-frequency antenna is enlarged as described above, the capacitive coupling component generated on the dielectric wall also increases, the uniformity of the plasma distribution is reduced, and furthermore, the generation of deposits in the processing chamber and the shaving of the dielectric wall, Further, these may cause attachment of minute foreign matter (particles) to the substrate.
[0009]
For this reason, measures such as increasing the distance between the high-frequency antenna (dielectric wall) and the substrate or standing the antenna perpendicular to the dielectric wall are conceivable. In this case, the volume of the processing chamber is increased, Other problems arise, such as a decrease in the etching rate due to an increase in the distance between the plasma and the substrate, and a deterioration in the ignitability of the plasma due to a decrease in the capacitive coupling between the antenna and the plasma.
[0010]
The present invention has been made in view of the above circumstances, and has been made to increase the size of a high-frequency antenna by increasing the size of a device and reduce the plasma coupling by reducing the capacitive coupling component between the high-frequency antenna and the plasma without deteriorating the ignitability of the plasma. It is an object of the present invention to provide a plasma apparatus capable of achieving both uniform processing and reduction in foreign matter adhesion to a substrate to be processed.
[0011]
In addition, the present invention provides uniform plasma processing by reducing a capacitive coupling component between a high-frequency antenna and plasma, reduces foreign matter adhesion to a substrate to be processed, and increases plasma ignitability without increasing the volume of a processing chamber. It is an object of the present invention to provide a plasma device capable of achieving both improvement and improvement.
[0012]
Further, the present invention can achieve both uniform plasma processing by reducing the capacitive coupling component between the high-frequency antenna and the plasma, reduction of foreign matter adhesion to the substrate to be processed, and improvement in plasma processing efficiency such as an etching rate. It is an object to provide a possible plasma device.
[0013]
[Means for Solving the Problems]
In order to solve the above problem, a first aspect of the present invention is a plasma processing apparatus for performing a plasma process on a substrate to be processed, comprising: an inductively coupled antenna; a high-frequency power source connected to the inductively coupled antenna; A conductive member disposed between the inductively coupled antenna and the substrate to be processed and not grounded, and a capacitor that connects the inductively coupled antenna and the conductive member and forms an electric circuit with them. A plasma processing apparatus is provided.
[0014]
According to a second aspect of the present invention, there is provided a processing chamber for performing a plasma processing on a substrate to be processed, a processing gas supply system for supplying a processing gas into the processing chamber, an exhaust system for exhausting the processing chamber, A dielectric wall constituting an upper wall, and a high-frequency antenna provided on a portion corresponding to the dielectric wall outside the processing chamber and configured to generate an induction electric field in the processing chamber by supplying high-frequency power. A plasma processing apparatus that converts the processing gas into plasma by the induction electric field to perform plasma processing on the substrate to be processed, and a conductive member disposed between the inductive coupling antenna and the substrate to be processed. A plasma processing apparatus comprising: a capacitor that connects the conductive member and the inductive coupling antenna and forms an electric circuit together with the conductive member.
[0015]
According to the above-described present invention, for example, even when the inductive coupling antenna is enlarged and capacitive coupling with plasma increases, the inductive coupling antenna is sufficiently separated from the processing chamber (dielectric wall) to reduce the capacitive coupling. In addition to reducing the capacitive coupling component between the high-frequency antenna and the plasma, the plasma processing can be made uniform and the adhesion of deposited foreign matter to the substrate to be processed can be reduced, and connected to the inductively coupled antenna via an electric circuit including a capacitor. The minimum required capacitive coupling between the conductive member and the plasma can maintain and improve the ignitability of the plasma. In addition, during the plasma processing, the presence of the capacitor limits the supply of high-frequency power to the conductive member in an amount equal to or greater than that required for plasma ignition, thereby suppressing the presence of the conductive member from affecting the plasma processing.
[0016]
In addition, since the high-frequency antenna can be sufficiently separated from the processing chamber (dielectric wall), the volume of the processing chamber can be reduced so that the dielectric wall is close to the substrate to be processed, and the plasma formed immediately below the dielectric wall can be reduced. By reducing the distance to the substrate to be processed, for example, an improvement in plasma processing such as an etching rate in plasma etching can be realized.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a sectional view showing an induction plasma etching apparatus according to one embodiment of the plasma processing apparatus of the present invention, and FIGS. 2 and 3 are plan views showing a part of the induction plasma etching apparatus of this embodiment. . The apparatus of this embodiment is used for etching a metal film, an ITO film, an oxide film, and the like when a thin film transistor is formed on a substrate to be processed, for example, an LCD glass substrate in manufacturing an LCD.
[0018]
The induction plasma etching apparatus has an airtight main body container 10 in the form of a rectangular tube made of a conductive material, for example, aluminum whose inner wall surface is anodized (anodized). The main body container 10 is assembled so as to be disassembled, and is grounded by a ground wire 11. The main body container 10 is vertically partitioned by a dielectric wall 20 into an antenna chamber 30 and an airtight processing chamber 40. Therefore, the dielectric wall 20 forms a ceiling wall of the processing chamber 40.
[0019]
A shower head 21 having a plurality of gas outlets 21a is provided on the lower surface of the dielectric wall 20, and the shower head 21 is connected to a processing gas supply system 90 including a processing gas supply source and a valve system. I have. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 90 is discharged into the processing chamber 40 through the plurality of gas outlets 21 a of the shower head 21.
[0020]
In the antenna chamber 30, an induction consisting of a high-frequency (RF) antenna is positioned above the dielectric wall 20 at a height of a distance h2 (a distance h1 from a substrate G to be described later) so as to face the dielectric wall 20. A coupling antenna 60 is provided. As illustrated in FIG. 2, the inductively coupled antenna 60 is a planar coil antenna having a plurality of spiral conductor patterns 61 to 64. In the inductively coupled antenna 60, the central part 60 a of the spiral is led out of the ceiling of the main body container 10 to the outside, and is connected to a high frequency power supply 66 via a matching unit 65. On the other hand, the outer end of each spiral of the plurality of conductor patterns 61 to 64 is connected to the main container 10 via each of the plurality of capacitors C1 to C4, and is thereby grounded.
[0021]
During the plasma processing, a high frequency power for generating an induced electric field, for example, a frequency of 13.56 MHz, is supplied to the inductive coupling antenna 60 from the high frequency power supply 66. An induction electric field is formed in the processing chamber 40 by the inductive coupling antenna 60 to which the high-frequency power is supplied, and the processing gas supplied from the gas outlet 21a is turned into plasma by the induction electric field. At this time, the output of the high frequency power supply 66 is appropriately set so as to have a value sufficient to generate plasma.
[0022]
The distance h2 of the inductively coupled antenna 60 from the dielectric wall 20 is set to a sufficient distance that the plasma formed in the processing chamber 40 and the inductively coupled antenna 60 are not capacitively coupled.
[0023]
In the case of the present embodiment, on the upper surface of the dielectric wall 20, a capacitance pattern 50 that is capacitively coupled to the plasma is provided, and an upward induction is performed via an electric circuit 100 including a capacitor C5 having a fixed or variable capacitance value. It is connected to a coupling antenna 60.
[0024]
As shown in FIG. 3, in this capacitance pattern 50, a plurality of fins 50b each having an open end so as not to form a closed circuit are radially connected to each of the cross-shaped shafts 50a in a swastika shape. It has a configuration. Desirably, the plurality of fins 50b of the capacitance pattern 50 do not impede the induced electric field from the inductive coupling antenna 60 located above the processing pattern 40 to the processing chamber 40 and have a capacitive coupling with plasma formed in the processing chamber 40. The gap between them is sufficiently large and elongated so that the minimum value necessary for plasma ignition at the vacuum degree is obtained, that is, it is formed so that the area of the orthogonal projection to the dielectric wall 20 is minimized.
[0025]
Further, the capacitance value of the capacitor C5 interposed between the inductive coupling antenna 60 and the capacitance pattern 50 is set, for example, to be approximately の of the capacitance value of the capacitance pattern 50 with respect to plasma, and is necessary for plasma ignition. The power that is equal to or larger than the value is limited so as not to be supplied to the capacitance pattern 50 from the side of the inductive coupling antenna 60 connected to the high frequency power supply 66.
[0026]
Since the capacitance value of the capacitance pattern 50 necessary for plasma ignition differs depending on the degree of vacuum in the processing chamber 40, the capacitance value of the capacitor C5 in series with the capacitance pattern 50 is manually or automatically varied, and The combined capacitance value of the capacitance pattern 50 can be set to a value required for plasma ignition.
[0027]
A susceptor 70 as a mounting table for mounting a substrate G to be processed such as an LCD glass substrate is provided below the processing chamber 40 so as to face the inductively coupled antenna 60 with the dielectric wall 20 interposed therebetween. ing. The susceptor 70 is made of a conductive material, for example, aluminum whose surface is anodized (anodized). The substrate G to be processed placed on the susceptor 70 is suction-held on the susceptor 70 by an electrostatic chuck (not shown).
[0028]
The susceptor 70 is housed in the insulator frame 71, and is further supported by a hollow column 72. The column 72 penetrates the bottom of the main body container 10 while maintaining the airtight state, is supported by an elevating mechanism (not shown) provided outside the main body container 10, and is supported by the susceptor by the elevating mechanism when the substrate G to be processed is carried in and out. 70 is driven in the vertical direction. A bellows 73 is provided between the insulator frame 71 for accommodating the susceptor 70 and the bottom of the main body container 10 so as to hermetically surround the support column 72. The airtightness in the chamber 40 is guaranteed. The side wall 41 of the processing chamber 40 is provided with a gate valve 74 for loading and unloading the substrate G to be processed.
[0029]
A high-frequency power supply 76 is connected to the susceptor 70 via a matching unit 75 by a power supply rod provided in a hollow column 72. The high frequency power supply 76 applies high frequency power for bias, for example, high frequency power having a frequency of 6 MHz to the susceptor 70 during the plasma processing. The ions in the plasma generated in the processing chamber 40 are effectively drawn into the target substrate G by the high frequency power for bias.
[0030]
Further, in the susceptor 70, in order to control the temperature of the substrate G to be processed, a temperature control mechanism including a heating means such as a ceramic heater, a coolant flow path, and the like, and a temperature sensor are provided (all shown in the figure). Zu). All of the piping and wiring for these mechanisms and members are led out of the main container 10 through the hollow columns 72.
[0031]
An exhaust mechanism 80 including a vacuum pump and the like is connected to the bottom of the processing chamber 40 via an exhaust pipe 81. The exhaust mechanism 80 exhausts the processing chamber 40, and the inside of the processing chamber 40 is maintained at a predetermined level during plasma processing. Is set and maintained in a vacuum atmosphere (for example, 1.33 Pa).
[0032]
In the present embodiment, as described above, since the capacitive coupling between the inductively coupled antenna 60 or the capacitive pattern 50 and the plasma is made sufficiently small, the deposits in the processing chamber 40 due to the capacitive coupling and the deposits therefrom are formed. The distance h3 between the substrate G to be processed and the dielectric wall 20 is made sufficiently small without concern about the occurrence of foreign matter or the like due to the occurrence of foreign matter or the like. For example, it is necessary for the gate valve 74 to carry the substrate G into and out of the processing chamber 40. Minimum dimensions.
[0033]
Accordingly, the distance between the plasma formed between the dielectric wall 20 and the substrate G to be processed and the substrate G to be processed is reduced, and a high etching rate in the etching of the substrate G to be processed by the plasma can be realized.
[0034]
Next, an example of a processing operation when performing a plasma etching process on the substrate G to be processed using the inductively coupled plasma etching apparatus configured as described above will be described.
[0035]
First, in a state where the gate valve 74 is opened, the substrate G to be processed is carried into the processing chamber 40 by a transfer mechanism (not shown) from the gate valve 74, and is placed on the placement surface of the susceptor 70. The substrate G to be processed is fixed on the susceptor 70 (not shown). Next, a processing gas including an etching gas is discharged from the processing gas supply system 90 into the processing chamber 40 through the gas outlet 21 a of the dielectric wall 20, and the inside of the processing chamber 40 is discharged through the exhaust pipe 81 by the exhaust mechanism 80. Is evacuated to maintain the processing chamber at a pressure atmosphere of, for example, about 1.33 Pa.
[0036]
Next, a high frequency of 13.56 MHz is applied to the inductive coupling antenna 60 from the high frequency power supply 66, thereby forming a uniform induction electric field in the processing chamber 40 via the dielectric wall 20. The processing gas is connected to the inductively coupled antenna 60 via the capacitor C5 of the electric circuit 100, is disposed on the dielectric wall 20, and is capacitively coupled to the plasma. Then, an inductively coupled plasma is generated by an inductive electric field formed by the inductively coupled antenna 60 separated from the dielectric wall 20.
[0037]
That is, when the inductive coupling antenna 60 is moved away from the dielectric wall 20 (substrate G to be processed) to lower the capacitive coupling with the plasma by the inductive coupling antenna 60 and make the plasma distribution uniform, the capacitance with the plasma is increased. Although the plasma ignitability deteriorates due to the reduction in coupling, in the case of the present embodiment, a capacitor connected to the inductive coupling antenna 60 via the capacitor C5 and disposed close to the dielectric wall 20 (substrate G to be processed). By the pattern 50, the minimum capacitive coupling required for plasma ignition can be ensured, the plasma ignition performance can be improved, and plasma can be reliably formed at the beginning of plasma formation.
[0038]
As described above, in the present embodiment, even if the inductive coupling antenna 60 increases in size in response to the increase in the size of the substrate G to be processed, the distance h2 can be reduced without concern about deterioration of plasma ignitability due to a decrease in capacitive coupling. As described above, the inductively coupled antenna 60 can be sufficiently separated from the dielectric wall 20 to reduce the capacitive coupling between the inductively coupled antenna 60 and the plasma, which contributes to uneven distribution of the plasma. It is possible to achieve both the increase in the size, the stabilization of plasma ignition, and the formation of uniform plasma.
[0039]
The ions in the plasma uniformly generated in the processing chamber 40 in this way are effectively drawn into the substrate G to be processed by the high-frequency power of 6 MHz applied to the susceptor 70 from the high-frequency power supply 76, and A uniform etching process is performed on the substrate G.
[0040]
Further, in the case of the present embodiment, the inductively coupled antenna 60 can be separated from the dielectric wall 20 without concern about the deterioration of the ignitability of the plasma as described above. As a structure moved closer to the processing substrate G, the volume of the processing chamber 40 can be reduced, and the plasma formed in the space between the dielectric wall 20 and the substrate G to be processed can be reduced. The distance from the processing substrate G is reduced, and the etching rate in the etching action on the processing target substrate G by the plasma increases.
[0041]
As a result, the throughput can be improved by shortening the time required for etching. In addition, the reduction in the volume of the processing chamber 40 reduces the time required for evacuation, which also contributes to an improvement in throughput.
[0042]
The structure of the capacitance pattern 50 is not limited to the shape illustrated in FIG. 3, but may be the shape illustrated in FIG.
[0043]
That is, the capacitance pattern 51 illustrated in FIG. 4 has a shape including a plurality of fins 51b orthogonal to each other with respect to the X-shaped shaft portion 51a. Thereby, the individual fins 51b of the capacitance pattern 51 have a positional relationship orthogonal to the plurality of spiral conductive patterns 61 to 64 of the inductive coupling antenna 60 as illustrated in FIG. The parallel portion in the conductor pattern of the antenna 60 is reduced, and the ratio of the induction electric field radiated from the inductive coupling antenna 60 and reaching the processing chamber 40 attenuated by the capacitance pattern 51 is reduced, so that efficient plasma excitation by the inductive coupling antenna 60 is possible. become.
[0044]
Further, the electric circuit 100 may be an electric circuit 110 including a switch as illustrated in FIG. The electric circuit 110 of FIG. 5 includes a variable capacitor 111 functioning as a capacitor C5, and a switch 112 in series with the variable capacitor 111.
[0045]
The capacitance value of the variable capacitance capacitor 111 (capacitor C5) can be variably set by a capacitance control signal 111a input from the outside.
[0046]
The opening / closing operation of the switch 112 is controlled by a switch opening / closing control signal 112a input from the outside. When the switch 112 is closed, the capacitance pattern 50 is electrically connected to the inductive coupling antenna 60 via the variable capacitor 111 (capacitor C5). In the connected and open state, the capacitance pattern 50 is electrically disconnected from the inductive coupling antenna 60.
[0047]
Accordingly, when the required atmosphere or the like of the processing chamber 40 is different depending on the type of processing performed on the substrate G to be processed, that is, when the degree of difficulty of the ignitability of the plasma is different, the plasma is determined according to the degree of difficulty of the ignitability. It is possible to set / control the capacity of the variable capacitor 111 (capacitor C5) so that the capacity pattern 50 has the minimum necessary capacity coupling that can ignite the light.
[0048]
The switch 112 is, for example, closed at the time of plasma ignition at the start of the plasma processing, and is controlled to be opened and closed after ignition. Thus, at the start of the plasma processing, the capacitance pattern 50 is connected to the inductive coupling antenna 60 via the capacitor C5, and the capacitance pattern 50 assists the ignition of the plasma to realize the reliable ignition of the plasma. After the ignition, the capacitance pattern 50 can be completely completely electrically disconnected from the inductively coupled antenna 60 so that the capacitance coupling of the capacitance pattern 50 can be controlled so as not to affect the uniformity of the plasma.
[0049]
FIGS. 6 and 7 show an example of a device configuration provided with an inductive coupling antenna having a shape different from the examples of FIGS. 1 and 2 described above. FIG. 6 is a sectional view of the plasma processing apparatus, and FIG. 7 is a plan view showing the inductively coupled antenna. 6 and 7, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals.
[0050]
In the example of FIG. 6, the inductively coupled antenna 60-1 includes a plurality of conductor patterns 61-1 to 1-1 drawn from a central portion 60-1 a connected to the high-frequency power supply 66 and spirally drawn in the height direction. 64-1 is arranged so as to divide the cross-sectional space of the antenna chamber 30 into approximately four so as not to overlap with each other, and the outer end of each of the plurality of conductor patterns 61-1 to 64-1 is formed. The unit is connected to the main container 10 via each of the plurality of capacitors C1 to C4, and is thereby grounded.
[0051]
In this case, the plurality of conductor patterns 61-1 to 64-1 of the inductively coupled antenna 60-1 can be individually divided from the central portion 60-1a, thereby increasing the size of the inductively coupled antenna 60-1. Also, there is an advantage that the inductive coupling antenna 60-1 can be easily handled in disassembly and assembly of the device.
[0052]
Note that the present invention is not limited to the above embodiment, and various modifications are possible. For example, the shape of the capacitance pattern and the shape of the inductive coupling antenna are not limited to the above-described shapes, and can be variously changed. Further, the capacity pattern may be arranged inside the processing chamber.
[0053]
【The invention's effect】
As described above, according to the plasma processing apparatus of the present invention, it is possible to increase the size of the high-frequency antenna by increasing the size of the apparatus without deteriorating the ignitability of plasma for various atmospheres in the processing chamber. It is possible to make the plasma processing uniform by reducing the capacitive coupling component between the plasma and the plasma and to reduce the adhesion of foreign substances to the substrate to be processed.
[0054]
Also, without increasing the volume of the processing chamber, it is possible to achieve uniform plasma processing by reducing the capacitive coupling component between the high-frequency antenna and the plasma, to reduce the attachment of foreign substances to the substrate to be processed, and to improve the ignitability of the plasma. It is possible to do.
[0055]
In addition, it is possible to make plasma processing uniform by reducing the capacitive coupling component between the high-frequency antenna and the plasma, to reduce adhesion of foreign substances to the substrate to be processed, and to improve plasma processing efficiency such as an etching rate.
[Brief description of the drawings]
FIG. 1 is a sectional view showing an induction plasma etching apparatus according to an embodiment of the present invention.
FIG. 2 is a plan view of components of an induction plasma etching apparatus according to one embodiment of the present invention.
FIG. 3 is a plan view of components of an induction plasma etching apparatus according to one embodiment of the present invention.
FIG. 4 is a plan view showing a modification of the components of the induction plasma etching apparatus according to one embodiment of the present invention.
FIG. 5 is a conceptual diagram of a modification of the electric circuit of the induction plasma etching apparatus according to one embodiment of the present invention.
FIG. 6 is a perspective view of a modification of the induction plasma etching apparatus according to one embodiment of the present invention.
FIG. 7 is a plan view of components of a modification of the induction plasma etching apparatus according to one embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Main body container 20 ... Dielectric wall 21 ... Shower head 30 ... Antenna chamber 40 ... Processing chamber 50 ... Capacitance pattern (conductive member)
50a: Shaft 50b: Fin 51: Capacitance pattern (conductive member)
51a ... shaft part 51b ... fin 60 ... inductive coupling antenna 60a ... central part 61-64 ... conductor pattern 60-1 ... inductive coupling antenna 60-1a ... central part 61-1-64-1 ... conductor pattern 65 ... matching unit 66 ... High frequency power supply 70 ... Susceptor 80 ... Evacuation mechanism 100 ... Electrical circuit 110 ... Electrical circuit 111 ... Variable capacitor 111a ... Capacitance control signal 112 ... Switch 112a ... Switch open / close control signals C1 to C4 ... Capacitor C5 ... Capacitor G ... Substrate to be processed

Claims (14)

A plasma processing apparatus for performing plasma processing on a substrate to be processed,
An inductively coupled antenna;
A high-frequency power supply connected to the inductive coupling antenna,
A conductive member that is arranged between the inductive coupling antenna and the substrate to be processed and is not grounded,
A plasma processing apparatus comprising: a capacitor that connects the inductive coupling antenna and the conductive member and forms an electric circuit together with the conductive member. 2. The plasma processing apparatus according to claim 1, wherein the conductive member has a capacitance pattern that is capacitively coupled to plasma and passes an induced electric field from the inductively coupled antenna. 3. The plasma processing apparatus according to claim 2, wherein the capacitance pattern is arranged to be orthogonal to the inductive coupling antenna, and has an open end. 4. The plasma processing apparatus according to claim 1, wherein the conductive member is arranged at a position facing the substrate to be processed. 2. The plasma processing apparatus according to claim 1, wherein the capacitor has a variable capacitance value. The plasma processing apparatus according to claim 1, wherein the high-frequency power supply is selectively connected to the inductive coupling antenna, and is not connected to the conductive member. The plasma processing apparatus according to claim 1, wherein the inductive coupling antenna is disposed at a position facing the substrate to be processed. The plasma according to claim 1, wherein the electric circuit further includes a switch provided in series with the capacitor to control an electrical connection and disconnection between the conductive member and the inductive coupling antenna. Processing equipment. A processing chamber for performing plasma processing on the substrate to be processed,
A processing gas supply system for supplying a processing gas into the processing chamber,
An exhaust system that exhausts the processing chamber;
A dielectric wall constituting an upper wall of the processing chamber;
A high-frequency antenna provided at a portion corresponding to the dielectric wall outside the processing chamber and configured to generate an induction electric field in the processing chamber by being supplied with high-frequency power; A plasma processing apparatus for performing plasma processing on the substrate to be processed by turning into plasma,
A conductive member disposed between the inductive coupling antenna and the substrate to be processed, and a capacitor that connects the conductive member and the inductive coupling antenna and forms an electric circuit together with the conductive member. A plasma processing apparatus characterized by the above-mentioned. 10. The plasma processing apparatus according to claim 9, wherein the conductive member is arranged on the upper surface of the dielectric wall so as to face the substrate to be processed, and is formed of a capacitance pattern that is capacitively coupled to plasma. The plasma processing apparatus according to claim 10, wherein the capacitance pattern is arranged to be orthogonal to the inductive coupling antenna, and has an open end. The plasma processing apparatus according to claim 9, wherein the high-frequency power supply is connected to the inductive coupling antenna, and is not connected to the conductive member. The plasma processing apparatus according to claim 9, wherein a capacitance value of the capacitor forming the electric circuit is variable. 10. The plasma according to claim 9, wherein the electric circuit further includes a switch provided in series with the capacitor, the switch controlling electrical connection and disconnection between the conductive member and the inductive coupling antenna. Processing equipment.

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