CN106328473B - Plasma processing apparatus and the exhaust structure wherein used - Google Patents
Plasma processing apparatus and the exhaust structure wherein used Download PDFInfo
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- CN106328473B CN106328473B CN201610516168.7A CN201610516168A CN106328473B CN 106328473 B CN106328473 B CN 106328473B CN 201610516168 A CN201610516168 A CN 201610516168A CN 106328473 B CN106328473 B CN 106328473B
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- processing apparatus
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- 238000012545 processing Methods 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 73
- 230000008569 process Effects 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000003851 corona treatment Methods 0.000 claims abstract description 25
- 238000007667 floating Methods 0.000 claims abstract description 14
- 238000007599 discharging Methods 0.000 claims abstract description 13
- 238000005192 partition Methods 0.000 claims description 37
- 239000004020 conductor Substances 0.000 claims description 18
- 230000007246 mechanism Effects 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 10
- 230000037361 pathway Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 238000004080 punching Methods 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 abstract description 7
- 210000002381 plasma Anatomy 0.000 description 79
- 239000007789 gas Substances 0.000 description 53
- 239000007921 spray Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
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- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
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- 230000005611 electricity Effects 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of plasma processing apparatus, and in the case where applying high-power RF power to mounting table, being effectively prevented electric discharge above plasma intrusion exhaust portion and baffle becomes unstable.The plasma processing apparatus is in the interior substrate (G) being placed in the mounting surface of mounting table (23) of process chamber (4), corona treatment is carried out while applying high frequency bias to mounting table (23), it includes first open closure (34) and second open closure (35) of the setting in exhaust outlet (30) part, first open closure (34) is arranged in exhaust path downstream side, second open closure (35) is arranged in exhaust path upstream side, first open closure (34) is grounded, second open closure (35) is in electrically floating state, first and second open closures (34, 35) it is arranged with the interval that can generate stable discharging between them.
Description
Technical field
The present invention relates to the exhaust knots for carrying out the plasma processing apparatus of corona treatment to substrate and wherein using
Structure.
Background technology
In the manufacturing step of semiconductor devices and flat-panel monitor (FPD), exists and plasma etching is carried out to substrate
The step of with the corona treatments such as film process.
It is various using plasma-etching apparatus, plasma CVD film formation device etc. in such corona treatment
Plasma processing apparatus.When carrying out corona treatment using plasma processing apparatus, substrate-placing is being set to
In the indoor mounting table of processing for keeping vacuum, the plasma of regulation gas is generated in process chamber in such a state,
Corona treatment is implemented to substrate.
In plasma processing apparatus, the foreign matter or plasma generated in indoor processing region is handled in order to prevent
Exhaust gas region is invaded, baffle (baffle plate) is usually provided with, which has by forming eyed structure or slot knot
The opening portion of structure etc. and the structure (such as patent document 1) for ensuring aeration.
In addition, in patent document 1, the baffle with opening portion is arranged with electrically floating state, and is disclosed in patent document 2
Make the technology of such baffle ground connection.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 6-252245 bulletins
Patent document 2：Japanese Unexamined Patent Publication 2010-238980 bulletins
Invention content
The technical problem that the invention wants to solve
But, in such plasma processing apparatus, in order to efficiently lure the ion drawn in plasma, exist pair
Mounting table applies the case where high-frequency bias.In the corona treatment of large substrate, need that such high-frequency bias is made to be height
Power.
When applying high-frequency bias to mounting table like this, exhaust outlet becomes comparative electrode, will produce in air outlet portion
Capacitance coupling plasma.
In the case where baffle is in electrically floating state, since the plasma will not inactivate, plasma enters
In the intake section of pressure-control valve (APC), vacuum pump glow discharge can locally occur for exhaust portion, and component generates consumption.
On the other hand, in the case where baffle is grounded, since plasma inactivates on baffle, putting in exhaust portion
Electricity is suppressed.But, since glow discharge occurs everywhere on the baffle of ground connection, the electric discharge of exhaust space becomes unstable.
Thus, problem of the invention is that, one kind is provided in the case where applying high-power RF power to mounting table,
Can be effectively prevented electric discharge above plasma intrusion exhaust portion and baffle become unstable plasma processing apparatus and
The exhaust structure used in such plasma processing apparatus.
Technical solution for solving technical problem
To solve the above problems, first aspect present invention provides a kind of plasma processing apparatus, which is characterized in that packet
It includes：Process chamber is used to store substrate and implements corona treatment to the substrate；Mounting table has in above-mentioned process chamber
The mounting surface of interior mounting substrate；To supplying the treating-gas supply system of processing gas in above-mentioned process chamber；To above-mentioned process chamber
The exhaust portion being inside exhausted；Plasma generating mechanism is generated for being carried out to the substrate being positioned in above-mentioned mounting table
The plasma of corona treatment；High frequency electric source for applying biasing RF power to above-mentioned mounting table；Exist with setting
From above-mentioned process chamber go to the air outlet portion of above-mentioned exhaust portion or near it, the first open closure with multiple openings and
Second open closure, above-mentioned first open closure are arranged in the downstream side of exhaust pathway, and above-mentioned second open closure setting is being arranged
The upstream side of gas circuit diameter, above-mentioned first open closure and above-mentioned second open closure are made of conductive material, and above-mentioned first
Open closure is grounded, and above-mentioned second open closure is in electrically floating state, above-mentioned first open closure and above-mentioned second opening
Baffle is arranged with the interval that can generate stable discharging between them.
Exhaust structure in a kind of plasma processing apparatus of second aspect of the present invention, it is characterised in that：Above-mentioned plasma
Body processing unit includes：Process chamber is used to store substrate and implements corona treatment to the substrate；Mounting table has
The mounting surface of substrate is loaded in above-mentioned process chamber；To supplying the treating-gas supply system of processing gas in above-mentioned process chamber；
To the exhaust portion being exhausted in above-mentioned process chamber；Plasma generating mechanism is generated for being positioned in above-mentioned mounting table
On substrate carry out corona treatment plasma；With the high frequency for applying biasing RF power to above-mentioned mounting table
Power supply, the processing gas that above-mentioned exhaust structure is fed into above-mentioned process chamber are guided to above-mentioned exhaust portion, above-mentioned exhaust structure packet
Include be arranged the air outlet portion of above-mentioned exhaust portion is gone to from above-mentioned process chamber or near it, first with multiple openings open
Mouth baffle and the second open closure, above-mentioned first open closure are arranged in the downstream side of exhaust pathway, above-mentioned second open closure
It is arranged in the upstream side of exhaust pathway, above-mentioned first open closure and above-mentioned second open closure are made of conductive material,
Above-mentioned first open closure is grounded, and above-mentioned second open closure is in electrically floating state, above-mentioned first open closure and above-mentioned
Second open closure is arranged with the interval that can generate stable discharging between them.
Above-mentioned first open closure is preferably configured to cover the intake section of the exhaust piping of above-mentioned exhaust portion.Above-mentioned
One open closure is preferably spaced 1~10mm with above-mentioned second open closure.
Above-mentioned first open closure and above-mentioned second open closure can be configured to slot shape or mesh-shape, or with big
The punching of amount.
The aperture opening ratio of above-mentioned first open closure and above-mentioned second open closure is preferably 61.5% or less.
And such structure can be used, that is, further include not having the multiple of opening portion by what conductive material was constituted
Partition member, multiple partition member, which is separated out, to carry out the processing region of corona treatment to substrate and connects with above-mentioned exhaust portion
Logical exhaust gas region, above-mentioned multiple partition members are connect with earthing potential, adjacent partition member configure with being separated from each other with
It is formed between them and is fed into the processing gas of above-mentioned processing region and guides to the space of above-mentioned exhaust gas region.It is excellent in this case
Choosing further includes coverage component being made of conductive material, being connect without opening portion and with earthing potential, the coverage portion
Part is on the height and position different from above-mentioned partition member in at least part of side for covering above-mentioned space in a top view
Formula is arranged.
Such structure can also be used, that is, it is the space of rectangle, above-mentioned mounting table that above-mentioned process chamber, which has plan view shape,
Plan view shape it is rectangular, the substrate for loading rectangle.
Above-mentioned plasma generating mechanism can include for generating inductively coupled plasma in above-mentioned processing region
High frequency antenna.Above-mentioned high frequency antenna can be arranged across dielectric window on the top of above-mentioned process chamber, can also be across metal
Window is arranged on the top of above-mentioned process chamber.
Invention effect
According to the present invention, the air outlet portion of exhaust portion is being gone to from process chamber or near it with the state of ground connection setting the
One open closure, and the second open closure is arranged with electrically floating state in its exhaust path upstream side, also, first is opened
Mouthful baffle and the second open closure are configured with the interval for forming the degree of stable discharging between them, thus can inhibit etc. from
Daughter leaks into exhaust portion, and can inhibit the unstable glow discharge above baffle, and stabilization is generated in process chamber
Plasma.
Description of the drawings
Fig. 1 is the vertical cross-section diagram for the plasma processing apparatus for indicating an embodiment of the present invention.
Fig. 2 is the horizontal sectional view for the plasma processing apparatus for indicating an embodiment of the present invention.
Fig. 3 is the sectional view of the details of the exhaust portion for the plasma processing apparatus for indicating an embodiment of the present invention.
Fig. 4 is the figure for the configuration example for indicating the first and second open closures.
Fig. 5 is another horizontal sectional view of the configuration for indicating exhaust outlet.
Fig. 6 is the schematic diagram for indicating to generate the situation of capacitance coupling plasma when applying high-frequency bias to mounting table.
Fig. 7 be for illustrating the open closure provided with two-stage in present embodiment in the case of function and effect
Figure.
Fig. 8 is the figure for the plasma processing apparatus for indicating variation, and (a) is horizontal sectional view, is (b) to indicate lattice
The stereogram of part and the position relationship for covering component.
Reference sign
1：Main body container
2：Dielectric walls (dielectric members)
3：Antenna chamber
4：Process chamber
13：High frequency antenna
14：Adaptation
15：High frequency electric source
16：Power supply part
19：Supply lines
20：Treating-gas supply system
22：Terminal
23：Mounting table
27：Biasing high frequency electric source
30：Exhaust outlet
31：Exhaust piping
32：Automatic pressure control valve (APC)
33：Vacuum pump
34：First open closure
35：Second open closure
40：Exhaust portion
41：Processing region
42：Exhaust gas region
50：Partition member
34a,50a,52a：Ground wire
52：Cover component
60：Space
100：Control unit
G：Substrate.
Specific implementation mode
Embodiment of the present invention is illustrated referring to the drawings.Fig. 1 be indicate an embodiment of the present invention it is equal from
The vertical cross-section diagram of daughter processing unit, Fig. 2 are its horizontal sectional views, and Fig. 3 is the sectional view for the details for indicating exhaust portion.
The plasma processing apparatus of present embodiment is configured to inductance coupling plasma processing device, the inductive coupling
Inductively coupled plasma is generated in plasma processing apparatus, and such as FPD rectangular substrates as glass substrate are carried out
The inductively coupled plasmas processing such as etching process or ashing processing.
The plasma processing apparatus, which has, to be made of the aluminium of conductive material, such as internal face through anodized
The airtight main body container 1 of square tube shape.The main body container 1 by decomposable asymmetric choice net assembles, by being grounded 1a ground connection.Main body container 1
It is divided into antenna chamber 3 and process chamber 4 by about 2 dielectric walls.Dielectric walls 2 constitute the roof of process chamber 4.Dielectric walls 2 by
Al2O3The compositions such as equal ceramics, quartz.
Between the side wall 3a of antenna chamber 3 on main body container 1 and the side wall 4a of process chamber 4, it is provided with and protrudes inwardly
Bearing support 5, dielectric walls 2 are positioned on the bearing support 5.
It is embedded with the spray shell 11 of processing gas supply in the lower portion of dielectric walls 2.Shell 11 is sprayed to be arranged
It is crosswise, form the structure of support dielectric wall 2 from below, such as girder construction.Also, support the spray of above-mentioned dielectric walls 2
Leaching shell 11 is formed as the state being suspended on by more sunpenders (not shown) on the ceiling of main body container 1.Bearing support 5 and spray shell
Body 11 can also be covered by dielectric members.
The spray shell 11 by the preferred metal of conductive material, for example in order not to generate pollutant and in its inner surface and outer
The aluminium that surface has carried out anodized is constituted.It is formed with horizontal-extending gas flow path 12 in the spray shell 11, the gas
Body flow path 12 is connected to the multiple gas ejection hole 12a extended downwards.On the other hand, in the upper face center of dielectric walls 2,
It is provided with gas supply pipe 20a in a manner of being connected to the gas flow path 12.Ceilings of the gas supply pipe 20a from main body container 1
Perforation is connect to its outside with the treating-gas supply system 20 including processing gas supply source and valve system etc..To wait
In gas ions processing, the processing gas supplied from treating-gas supply system 20 is supplied through gas supply pipe 20a to spray shell
In 11, and it is ejected into process chamber 4 from the gas ejection hole 12a of its lower surface.
High frequency (RF) antenna 13 is provided in antenna chamber 3.High frequency antenna 13 is will be by the gold with good conductivity such as copper or aluminium
Belong to the antenna wire 13a configuration constituted circlewise or the arbitrary shape that uses all the time such as helical form and constitute.It can also
It is the multiple antenna with mutiple antennas portion.
The terminal 22 of antenna wire 13a is connect with the power supply part 16 extended to the top of antenna chamber 3.Power supply part 16
Upper end is connect by supply lines 19 with high frequency electric source 15.In addition, can also be equipped with adaptation 14 on supply lines 19.In addition, high frequency
Antenna 13 is left using the spacer 17 being made of insulating element from dielectric walls 2.In this way, by from high frequency electric source 15 to high frequency
The RF power that the supply of antenna 13 such as frequency is 13.56MHz, forms induction field in process chamber 4, is supplied from spray shell 11
The processing gas given is plasmarized because of the induction field, generates inductively coupled plasma.
On bottom wall 4b in process chamber 4, by across in a manner of dielectric walls 2 are opposite with high frequency antenna 13, through insulator
Component 24 is fixed with mounting table 23, and the wherein mounting table 23 has the mounting surface for loading rectangular substrate G.Dielectric member 24
It is in the shape of a frame.Mounting table 23 includes the main body 23a being made of the aluminium of conductive material, such as surface through anodized, and with
Surround the insulator frame 23b that the mode of the periphery of main body 23a is arranged.The substrate G in mounting table 23 is positioned in by electrostatic chuck
Absorption (not shown) is kept.
In mounting table 23, bottom wall, the insertion of dielectric member 24 through main body container 1 are through with for moving in and moving out base
The lifter pin (not shown) of plate G.Lifter pin is driven by the elevating mechanism being arranged outside main body container 1 lifting (not shown) and is carried out
Substrate G's moving in and moving out.In addition, mounting table 23 can also have the structure that can be lifted by elevating mechanism.
The main body 23a of mounting table 23 is connected to biasing high frequency electric source 27 by 25 matched device 26 of supply lines.The high frequency
Power supply 27 applies high-frequency bias (biasing RF power) in corona treatment to mounting table.The frequency of high-frequency bias is for example
For 6MHz.Under the action of the biasing RF power, the ion in the plasma generated in process chamber 4, which is efficiently lured, to be drawn
To substrate G.
In addition, in mounting table 23, be provided with for the temperature of control base board G by heating mechanisms such as ceramic heaters or
The temperature control device and temperature sensor (not shown) of the compositions such as refrigerant flow path.
In addition, mounting table 23 is configured to, cooling space (not shown) is formed in its back side when having loaded substrate G, and
And mounting table 23 is connected with for the He gas using authorized pressure to cooling space supply as the He gases of hot transmission gas
Body flow path 28.By supplying hot transmission gas to the back side of substrate G like this, it can realize that substrate G's is good under vacuum
Good temperature control.
The bottom center of the bottom wall 4b of process chamber 4 is formed with opening portion 4c, supply lines 25, He gas flow paths 28 and temperature control
The piping of mechanism processed, wiring are exported to across opening portion 4c outside main body container 1.
On one in four side wall 4a of process chamber 4, it is provided with the carrying-in/carrying-out mouth for moving in and moving out substrate G
29a and the gate valve 29 that it is opened and closed.
Process chamber 4 inner wall (inboard portion of side wall 4a) between mounting table 23, being provided with will separate in process chamber 4
For 4 partition members 50 of processing region 41 and exhaust gas region 42.Partition member 50 using in without opening portion rectangle,
The plank formed by conductive materials such as metals is constituted.Each partition member 50 and each side of mounting table 23 are arranged in correspondence with,
Grounded line 50a is connected to earthing potential.Alternatively, it is also possible to make partition member 50 be electrically connected so that it holds through main body with side wall 4a
Device 1 is grounded.
Adjacent partition member 50 configures with being separated from each other, to form the gas for making to be supplied to processing region 41 between them
Body is directed to the space 60 of exhaust gas region, and space 60 is present in four corners of 50 forming face of partition member.
Processing region 41 is the region being located in process chamber 4 on partition member 50, is for being formed for being carried out to substrate G
The region of the inductively coupled plasma of corona treatment.In addition, exhaust gas region 42 is to be located at partition member 50 in process chamber 4
Under region, be the region for importing the processing gas from processing region 41 and discharging it.
It is respectively arranged with exhaust outlet 30 in four corners of the bottom wall 4b of process chamber 4, each exhaust outlet 30 is provided with exhaust portion
40.Exhaust portion 40 includes：The exhaust piping 31 being connect with exhaust outlet 30；Aperture by adjusting exhaust piping 31 carrys out control process
The automatic pressure control valve (APC) 32 of pressure in room 4；With the vacuum pump for being piped exhaust in 31 pairs of process chambers 4 through exhaust
33.In this way, using vacuum pump 33 to exhaust in process chamber 4, in corona treatment, automatic pressure control valve (APC) is adjusted
32 aperture will set in process chamber 4 and be maintained at defined vacuum atmosphere.
As shown in figure 3, in 30 part of exhaust outlet, in a manner of the intake section of covering exhaust piping 31 being provided with first opens
Mouthful baffle 34, in the position that specific length is left in the top (i.e. the upstream side of exhaust pathway) of the first open closure 34, with the
The opposite mode of one open closure 34 is provided with the second open closure 35.That is, being provided with upper and lower two-layer configuration in exhaust outlet 30
Open closure.First open closure 34 and the second open closure 35 are made of conductive materials such as metals, have a large amount of opening,
Such as there are a large amount of punchings shown in (c) of mesh-shape or Fig. 4 shown in (b) of slot shape or Fig. 4 shown in (a) in Fig. 4
The structure in hole.
First open closure 34 is mounted on the insulating element 36 for the inner circumferential for constituting 31 tops of exhaust piping, passes through ground wire
34a is grounded.In addition, insulation spacer 37 annular in shape is provided between the first open closure 34 and the second open closure 35, the
Two open closures 35 are electrically floating state.Such two-stage open closure can realize that the interval of stable discharging is matched between them
It sets.Using the first open closure 34 and the second open closure 35, as described later, plasma leakage can be inhibited to exhaust portion
40, and stable plasma can be formed.
Between automatic pressure control valve (APC) 32 and vacuum pump 33, it is provided with for preventing foreign matter from invading vacuum pump 33
Grid mesh part 38.Grid mesh part 38 is made of conductive materials such as metals, and is grounded.
The preferred scope at the interval of the first open closure 34 and the second open closure 35 is 1~10mm.In addition, the first opening
Baffle 34 and the aperture opening ratio of the second open closure 35 are preferably 61.5% or less.
In addition, the quantity of exhaust outlet 30 and position adapt to set according to the size of device.For example, it is also possible to such as Fig. 5
Shown in horizontal sectional view, exhaust outlet 30 is arranged by twos along each side wall 4a of process chamber 4, amounts to setting 8.
The plasma processing apparatus of present embodiment includes the control unit 100 being made of microprocessor (computer), uses
Family interface 101 and storage part 102.It is each structural portion of 100 plasma processing unit of control unit, such as valve, high frequency electric source, true
The transmissions instruction such as sky pump, controls them.User interface 101 includes for operator handle for managing plasma
The keyboard of the input operation of the instruction input of device etc., the display for showing the working condition visualization of plasma processing apparatus
Device etc. is connect with control unit 100.Storage part 102 is stored with realizes corona treatment for the control using control unit 100
The control program of the various processing executed in device, each structural portion for making plasma processing apparatus according to treatment conditions
Program, that is, the processing scheme for executing processing, connect with control unit 100.Processing scheme is stored in the storage medium in storage part 102
On.Storage medium can be the hard disk being built in computer, semiconductor memory, and can also be CDROM, DVD, flash memory etc. can
Move media.Alternatively, it is also possible to suitably from other devices through such as special circuit transmission plan.In this way, as desired by
Instruction from user interface 101 etc. calls arbitrary processing scheme from storage part 102, and control unit 100 is made to execute the program, from
And the desired processing in plasma processing apparatus is executed under the control of control unit 100.
Then, illustrate to implement corona treatment, for example etc. to substrate G using the plasma processing apparatus that constitutes above
Processing action when plasma or plasma ashing.
First, in the state of opening gate valve 29, using carrying mechanism (not shown) by substrate G from carrying-in/carrying-out mouth 29a
It moves in process chamber 4, is positioned in the mounting surface of mounting table 23, be later fixed on substrate G using electrostatic chuck (not shown)
In mounting table 23.Then, from treating-gas supply system 20 through spraying the gas ejection hole 12a of shell 11 to being supplied in process chamber 4
To processing gas, and matched through exhaust using vacuum pump 33 while using automatic pressure control valve (APC) 32 control pressure
Pipe 31, to being vacuum-evacuated in process chamber 4, will maintain such as 0.66~26.6Pa or so from exhaust outlet 30 in process chamber
Pressure atmosphere.
In addition, at this time in order to avoid the temperature rise and temperature change of substrate G, through He gas flow paths 28 to the back of the body of substrate G
He gas of the cooling space supply of surface side as hot transmission gas.
Then, apply the RF power of such as 13.56MHz to high frequency antenna 13 from high frequency electric source 15, be thus situated between across electricity
Matter wall 2 forms uniform induction field in process chamber 4.Under the action of the induction field formed in this way, processing gas is being located
It is plasmarized in reason room 4, generate highdensity inductively coupled plasma.Using the plasma to substrate G carry out etc. from
Daughter is handled, such as carries out plasma etching or plasma ashing to the defined film of substrate G.At this point, as high frequency deviation
Set while the RF power that such as frequency is 6MHz applied to mounting table 23 from high frequency electric source 27, by generate in process chamber 4 etc.
Ion in gas ions, which efficiently lures, guides to substrate G.
Processing region 41 plasma of the processing gas in process chamber 4 and after being provided to corona treatment,
It is aspirated by vacuum pump 33 and reaches exhaust gas region 42 from the space 60 being formed between adjacent partition member 50, from exhaust outlet 30
It is discharged through exhaust piping 31.
By applying high-frequency bias to mounting table 23, as shown in fig. 6, near with the inner wall of process chamber 4 and exhaust outlet 30
The electric conductor being grounded generates capacitance coupling plasma as comparative electrode.At this point, the case where substrate G is large substrate
Under, it needs to apply high-power RF power to mounting table 23, will produce electric arc if comparative electrode is smaller, electrically becoming
It is unstable.Therefore, on the position in the inner wall of process chamber 4 (inboard portion of side wall 4a) between mounting table 23, will not have
The ground connection of multiple partition members 50 of opening portion is arranged to make it play a role as comparative electrode, by expanding comparative electrode come really
Protect electric stability.In addition, being formed with the space 60 for passing to exhaust gas region 42 between adjacent partition member 50, also utilizes and divide
Every the control that component 50 is exhausted.
But, even if the partition member 50 of multiple ground connection is arranged like this, according to the difference for the treatment of conditions, when passing through vacuum
It pumps 33 suction and so that plasma is attracted near exhaust outlet 30, and inside plasma intrusion exhaust portion 40
When, such as luminous (electric arc) is generated because of electric discharge near automatic pressure control valve (APC) 32, the anode oxide film on surface,
Grid mesh part 38 on vacuum pump 33 will produce consumption.
In this regard, as shown in (a) of Fig. 7, if the first open closure 34 of ground connection is only arranged in exhaust outlet 30, due to it is equal from
Daughter inactivates in the first open closure 34, so plasma is suppressed to the intrusion of exhaust portion 40, can inhibit certainly
What dynamic pressure force control valve (APC) 32 was nearby generated by electric discharge shines (electric arc).But, earthing potential generates partially in process chamber 4
It leans on, unstable glow discharge occurs for upper area, occurs flickering caused by discharging everywhere, the plasma in process chamber 4
Body becomes unstable.
On the other hand, as shown in (b) of Fig. 7, if the second open closure 35 of electrically floating state is only arranged in exhaust outlet 30,
Then since the second open closure 35 is plasma potential, so unstable glow discharge will not occur for its upper area.No
Cross, since plasma will not inactivate in the second open closure 35 of electrically floating state, so cannot be effectively prevented etc. from
Daughter invades exhaust portion 40, (the electricity that shines that cannot fully inhibit automatic pressure control valve (APC) 32 nearby to be generated by electric discharge
Arc).
Therefore, in the present embodiment, as shown in (c) of Fig. 7, by the first open closure 34 of the ground connection of subordinate side and upper
Second open closure 35 of the electrically floating state of grade side (upstream side of exhaust pathway), can realize stable discharging between them
Be set to two-stage.That is, the second open closure 35 of electrically floating state is plasma potential, in the first gear with ground connection
Potential difference is generated between plate.Therefore, by suitably adjusting the interval between these open closures, stabilization is formed between them
Electric discharge, plasma are kept.In this way, the ion and electronics across the second open closure 35 are fettered by the plasma.As a result,
It can speculate the glow discharge that the stabilization not flickered is formd between the first open closure 34 and the second open closure 35.In addition,
The plasma for being attracted to exhaust outlet 30 inactivates in the first open closure 34 of subordinate side, so can inhibit in automatic pressure
What control valve (APC) 32 was nearby generated by electric discharge shines (electric arc).Further, since the second open closure 35 of higher level side be etc.
Ion bulk potential, so the bias of the earthing potential of process chamber 4 is mitigated.Then, under the action of in this way, can locate
It manages and generates stable plasma in room 4.
At this point, the interval setting as described above of the first open closure 34 and the second open closure 35 is to give birth between them
At the interval of the degree of stable discharging.Stable discharging cannot be generated if interval is excessive, between them, it is difficult to be inhibited in ground connection
There is a phenomenon where unstable glow discharges in first open closure 34.And if their interval too small, can not utilize first
Open closure 34 makes plasma fully inactivate, it is difficult to prevent plasma from invading exhaust portion 40.From such a viewpoint,
The interval preferably range of 1~10mm of one open closure 34 and the second open closure 35.
In addition, to obtain the effect for fettering plasma, and in the first open closure 34 and the second open closure 35
Between form stable electric discharge the viewpoint of effect set out, the aperture opening ratio of the first open closure 34 and the second open closure 35 is preferred
61.5% or less.
In this way, according to the present embodiment, in 30 part of exhaust outlet, in a manner of the intake section of covering exhaust piping 31,
The first open closure 34 is set with the state of ground connection, and is opened with electrically floating state setting second in its exhaust path upstream side
Mouth baffle 35, also, by the first open closure 34 and the second open closure 35 to form the degree of stable discharging between them
Interval configuration, so plasma leakage can be inhibited to exhaust portion 40, and can inhibit unstable above baffle
Glow discharge generates stable plasma in process chamber 4.
Then modified embodiment of the present embodiment is illustrated.(a) of Fig. 8 is the corona treatment dress for indicating variation
The horizontal sectional view set, (b) of Fig. 8 are to indicate that the partition member in the plasma processing apparatus is closed with the position for covering component
The stereogram of system.Lower orientation of the plasma processing apparatus in addition to the space 60 between being formed in adjacent partition member 50
It installs to be equipped with and cover except component 52, same structure is used with the plasma processing apparatus of Fig. 1.
It covers component 52 to be constituted using the plank formed by conductive materials such as metals, is arranged respectively at process chamber 4
Four corners of the inner wall (inboard portion of side wall 4a) between mounting table 23, and positioned at the lower position of partition member 50.It hides
Covering component 52, to be configured to its at least part when looking down Chong Die with partition member 50, and space 60 is covered.Also, cover component
52 are connected to earthing potential by being grounded 52a.Coverage component 52 can also be made to be grounded through main body container 1 or partition member 50.
Like this, the coverage portion of ground connection is set the lower position in partition member 50 in a manner of covering space 60
Part 52 can cover exhaust pathway relative to the plasma being present in processing region 41, plasma can be inhibited to be inhaled
Lead to exhaust outlet 30.
In addition, space 60 not being blacked out but can be obtained if covering the part in space 60 even if covering component 52
Obtain a degree of coverage effect.As long as also, cover component 52 and be arranged in the height and position different from partition member 50,
It can also be arranged in the top position of partition member 50.
Additionally, this invention is not limited to the above embodiments, may exist various modifications.For example, in the above-described embodiment,
It illustrates as device for processing inductive coupling plasmas, dielectric window is provided with high frequency antenna on the top of process chamber
The case where, but can also be suitable for not being across dielectric window but the case where metal window is provided with high frequency antenna.The feelings
Under condition, the supply of processing gas can not be supplied from the spray shell of the crosswises such as girder construction, but be arranged on metal window
Gas shower portion carrys out supply gas.
In addition, in the above-described embodiment, illustrating the relatively electric of the mounting table for being applied in biasing RF power
The case where smaller device for processing inductive coupling plasmas of the area of pole, the present invention can be applied particularly effectively, but not
It is limited to this, can be applied as long as the plasma processing apparatus that mounting table is applied in biasing RF power, such as even if
It is the capacitively coupled (parallel plate-type) etc. for having used the area of the plasma processing apparatus or comparative electrode of microwave larger
Gas ions processing unit can also be applied.
In addition, in the above-described embodiment, illustrating the first open closure and the second open closure being arranged in exhaust outlet
Partial example, but not limited to this, it can also be arranged near exhaust outlet.In addition, the first open closure must not necessarily cover
It is vented the intake section of piping, as long as configuration is on it can inhibit position of the plasma leakage to exhaust portion.In addition,
Can entire surface of the inner wall (inboard portion of side wall 4a) between mounting table 23 of process chamber 4 be arranged the first open closure and
Second open closure.
In addition, in the above-described embodiment, illustrating the space between adjacent partition member being formed in process chamber
The example in four corners, but not limited thereto.
In addition, in the above-described embodiment, illustrating the hole portion that the first and second open closures are applied to exhaust gear
The example divided, but as long as being observation panel, substrate carrying-in/carrying-out mouth etc., being arranged in the process container of plasma processing apparatus
Opening can be applied.
In addition, illustrating to apply the present invention to carry out plasma etching and plasma ashing in the above embodiment
Device in situation, but can also apply to CVD film forming etc. other plasma processing apparatus.In addition, in above-mentioned embodiment party
In formula, the example for using FPD rectangular substrates as substrate is illustrated, but can also apply to carry out other rectangular substrates
The case where processing, and the circular substrate such as it is not limited to rectangle, such as can also apply to semiconductor crystal wafer.
Claims (17)
1. a kind of plasma processing apparatus, which is characterized in that including：
Process chamber is used to store substrate and implements corona treatment to the substrate；
Mounting table has the mounting surface that substrate is loaded in the process chamber；
To supplying the treating-gas supply system of processing gas in the process chamber；
To the exhaust portion being exhausted in the process chamber；
Plasma generating mechanism, generate for the substrate that is positioned in the mounting table carry out corona treatment etc.
Gas ions；
High frequency electric source for applying biasing RF power to the mounting table；With
Be arranged the air outlet portion of the exhaust portion is gone to from the process chamber or near it, with multiple openings first
Open closure and the second open closure,
First open closure is arranged in the downstream side of exhaust pathway, and second open closure is arranged in the upper of exhaust pathway
Side is swum,
It is provided with insulation spacer between first open closure and second open closure,
First open closure and second open closure are made of conductive material, and first open closure is connect
Ground, second open closure are in electrically floating state,
First open closure and second open closure are arranged with the interval that can generate stable discharging between them,
It is divided into 1~10mm between first open closure and second open closure.
2. plasma processing apparatus as described in claim 1, it is characterised in that：
First open closure is configured to cover the intake section of the exhaust piping of the exhaust portion.
3. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that：
First open closure and second open closure are configured to slot shape or mesh-shape, or with a large amount of punching
Hole.
4. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that：
The aperture opening ratio of first open closure and second open closure is 61.5% or less.
5. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that：
Further include the multiple partition members without opening portion being made of conductive material, multiple partition member is separated out pair
Substrate carries out the processing region of corona treatment and the exhaust gas region that be connected to the exhaust portion, the multiple partition member and
Earthing potential connects, and adjacent partition member configures with being separated from each other is fed into the processing region to be formed between them
Processing gas guide to the space of the exhaust gas region.
6. plasma processing apparatus as claimed in claim 5, it is characterised in that：
Further include coverage component being made of conductive material, being connect without opening portion and with earthing potential, the coverage
Component on the height and position different from the partition member by covered in figure of bowing the space it is at least part of in a manner of
Setting.
7. plasma processing apparatus as claimed in claim 1 or 2, it is characterised in that：
It is the space of rectangle that the process chamber, which has plan view shape, and the plan view shape of the mounting table is rectangular, for loading square
The substrate of shape.
8. plasma processing apparatus as claimed in claim 5, it is characterised in that：
The plasma generating mechanism includes the high frequency day for generating inductively coupled plasma in the processing region
Line.
9. plasma processing apparatus as claimed in claim 8, it is characterised in that：
The high frequency antenna is arranged across dielectric window on the top of the process chamber.
10. plasma processing apparatus as claimed in claim 8, it is characterised in that：
The high frequency antenna is arranged across metal window on the top of the process chamber.
11. the exhaust structure in a kind of plasma processing apparatus, it is characterised in that：
The plasma processing apparatus includes：
Process chamber is used to store substrate and implements corona treatment to the substrate；
Mounting table has the mounting surface that substrate is loaded in the process chamber；
To supplying the treating-gas supply system of processing gas in the process chamber；
To the exhaust portion being exhausted in the process chamber；
Plasma generating mechanism, generate for the substrate that is positioned in the mounting table carry out corona treatment etc.
Gas ions；With
High frequency electric source for applying biasing RF power to the mounting table,
The processing gas that the exhaust structure is fed into the process chamber is guided to the exhaust portion,
The exhaust structure include be arranged the air outlet portion of the exhaust portion is gone to from the process chamber or near it, tool
There are the first open closure and the second open closure of multiple openings,
First open closure is arranged in the downstream side of exhaust pathway, and second open closure is arranged in the upper of exhaust pathway
Side is swum,
It is provided with insulation spacer between first open closure and second open closure,
First open closure and second open closure are made of conductive material, and first open closure is connect
Ground, second open closure are in electrically floating state,
First open closure and second open closure are arranged with the interval that can generate stable discharging between them,
It is divided into 1~10mm between first open closure and second open closure.
12. exhaust structure as claimed in claim 11, it is characterised in that：
First open closure is configured to cover the intake section of the exhaust piping of the exhaust portion.
13. the exhaust structure as described in claim 11 or 12, it is characterised in that：
First open closure and second open closure are configured to slot shape or mesh-shape, or with a large amount of punching
Hole.
14. the exhaust structure as described in claim 11 or 12, it is characterised in that：
The aperture opening ratio of first open closure and second open closure is 61.5% or less.
15. the exhaust structure as described in claim 11 or 12, it is characterised in that：
Further include the multiple partition members without opening portion being made of conductive material, multiple partition member is separated out pair
Substrate carries out the processing region of corona treatment and the exhaust gas region that be connected to the exhaust portion, the multiple partition member and
Earthing potential connects, and adjacent partition member configures with being separated from each other is fed into the processing region to be formed between them
Processing gas guide to the space of the exhaust gas region.
16. exhaust structure as claimed in claim 15, it is characterised in that：
Further include coverage component being made of conductive material, being connect without opening portion and with earthing potential, the coverage
Component covers at least part of side in the space in a top view on the height and position different from the partition member
Formula is arranged.
17. the exhaust structure as described in claim 11 or 12, it is characterised in that：
It is the space of rectangle that the process chamber, which has plan view shape, and the plan view shape of the mounting table is rectangular, for loading square
The substrate of shape.
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| JP6630649B2 (en) | 2016-09-16 | 2020-01-15 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
| JP6804392B2 (en) * | 2017-06-05 | 2020-12-23 | 東京エレクトロン株式会社 | Plasma processing equipment and gas shower head |
| WO2019053836A1 (en) * | 2017-09-14 | 2019-03-21 | 株式会社日立ハイテクノロジーズ | Plasma processing device and wet cleaning method |
| JP7166147B2 (en) * | 2018-11-14 | 2022-11-07 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP7232705B2 (en) * | 2019-05-16 | 2023-03-03 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN112117176B (en) * | 2019-06-20 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and plasma processing system |
| JP7308711B2 (en) * | 2019-09-26 | 2023-07-14 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP7418285B2 (en) * | 2020-05-27 | 2024-01-19 | 東京エレクトロン株式会社 | Substrate processing equipment, its manufacturing method, and exhaust structure |
| JP7500397B2 (en) | 2020-11-13 | 2024-06-17 | 東京エレクトロン株式会社 | Plasma processing apparatus, its manufacturing method, and plasma processing method |
| JP7329130B2 (en) * | 2021-05-27 | 2023-08-17 | 株式会社日立ハイテク | Plasma processing equipment |
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| JP4255747B2 (en) * | 2003-05-13 | 2009-04-15 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
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