CN103491700A - Plasma treatment apparatus, plasma generation apparatus, antenna structure - Google Patents
Plasma treatment apparatus, plasma generation apparatus, antenna structure Download PDFInfo
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- CN103491700A CN103491700A CN201310233964.6A CN201310233964A CN103491700A CN 103491700 A CN103491700 A CN 103491700A CN 201310233964 A CN201310233964 A CN 201310233964A CN 103491700 A CN103491700 A CN 103491700A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
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- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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Abstract
The invention provides a plasma treatment apparatus, a plasma generation apparatus and an antenna structure. Apparatus structure can be simplified and decrease of plasma generation efficiency can be prevented. The plasma treatment apparatus (10) is provided with a cavity (11), a carrying table (12) arranged in the cavity (11) and carrying a substrate (S); an ICP antenna (13) arranged opposite to the carrying table (12) outside the cavity and connected with a high frequency power source (26); and a window component (14) arranged between the carrying table (12) and the ICP antenna (13) and including a conductor, wherein the window component (14) is divided into a plurality of mutually isolated divided pieces (27) connected with each other through leads (29) and leads (30) of electrified containers, so that a closed loop (31) is formed.
Description
Technical field
(Inductive Coupling Plasma: inductively coupled plasma) antenna generates plasma processing apparatus, plasma generating equipment, antenna structure body and the plasma generating method of plasma to the present invention relates to use ICP.
Background technology
In possessing chamber and being disposed at the plasma processing apparatus of ICP (the Inductive Coupling Plasma) antenna outside chamber, with the top of the opposed chamber of ICP antenna by dielectric, for example wrap quartzous dielectric window and form.In this plasma processing unit, flow through high-frequency current in the ICP antenna be connected with high frequency electric source, this high-frequency current makes the ICP antenna produce the magnetic line of force.The magnetic line of force produced sees through dielectric window and produce magnetic field along the ICP antenna in chamber.Produce induction field when this magnetic field changes in time, the electronics accelerated by this induction field bumps and produces plasma with the molecule, the atom that import to the processing gas in chamber.Induction field produces in the mode along the ICP antenna, and therefore in chamber, plasma also produces in the mode along the ICP antenna.
In order to separate as the chamber interior of reduced pressure atmosphere and chamber outside as atmospheric pressure environment, dielectric window need to have the thickness of the rigidity that can guarantee to stand pressure differential.In addition, can predict and be contained in chamber and implement substrate, for example FPD of plasma treatment (Flat Panel Display: maximization flat-panel monitor) also will further develop from now on, therefore need to make and the opposed dielectric window heavy caliber of substrate, rigidity in the time of need to guaranteeing heavy caliber, need further to increase the thickness of dielectric window thus.
Therefore yet the weight of the thicker dielectric window of thickness of dielectric window more increases, and correspondingly cost also rises, proposed the electric conductor high and cheap by rigidity, for example wrapped the top that metallic electric conductor window forms chamber.In the electric conductor window, metal covers the magnetic line of force, and therefore the slit that connects this electric conductor window is set, and via this slit, the magnetic line of force is seen through.But quantity, the size of the slit that will arrange are restricted, therefore in the electric conductor window magnetic line of force see through decrease in efficiency, its result, in chamber, the formation efficiency of plasma descends.
On the other hand, proposed the coil of floating of charged container is arranged at outside chamber and near the ICP antenna (for example, with reference to patent documentation 1).Cross induced current by the electromagnetic induction of the magnetic line of force that produced by the ICP antenna at this coil midstream of floating, this induced current coil that makes to float produces the magnetic line of force, and the magnetic line of force produced sees through dielectric window and produce magnetic field along the coil of floating in chamber.That is, not only produce the magnetic field also produced along the magnetic field of ICP antenna along floating coil in chamber, the coil of therefore floating plays the effect of auxiliary antenna, the induction field grow produced in chamber, and its result, can prevent that the formation efficiency of plasma from descending.
Patent documentation 1: No. 2011-119659, TOHKEMY
Summary of the invention
the problem that invention will solve
Even with the opposed ICP antenna of electric conductor window in, also consider that the technology of the above-mentioned patent documentation 1 of application strengthens induction field, but also need the coil of floating is set except the ICP antenna, so have the apparatus structure complicated this problem that becomes.
The object of the invention is to, a kind of plasma processing apparatus, plasma generating equipment, antenna structure body and plasma generating method that can make apparatus structure simply and can prevent the formation efficiency decline of plasma is provided.
for the scheme of dealing with problems
In order to achieve the above object, the described plasma processing apparatus of the 1st invention possesses: process chamber, and it accommodates substrate, mounting table, it is configured in the inside of above-mentioned process chamber and loads aforesaid substrate, and induction coupled antenna, its outside at above-mentioned process chamber is configured to above-mentioned mounting table opposed, and be connected with high frequency electric source, this plasma processing unit is characterised in that, also possesses window member, this window member forms the wall section with the opposed above-mentioned process chamber of above-mentioned induction coupled antenna, be present between above-mentioned mounting table and above-mentioned induction coupled antenna, by electric conductor, formed, above-mentioned window member is divided into a plurality of cutting plates, above-mentioned a plurality of cutting plate does not directly contact to make each other each other and can not conduct, at least part of cutting plate in above-mentioned a plurality of cutting plate is connected and forms closed-loop path by wire, at least one wire in the above-mentioned wire of each above-mentioned cutting plate of connection of above-mentioned closed-loop path has capacitor.
The 2nd invents described plasma processing apparatus is characterised in that, in the described plasma processing apparatus of the 1st invention, the static capacity of above-mentioned capacitor is adjusted to and makes the reactance of above-mentioned closed-loop path become negative value.
The described plasma processing apparatus of the 3rd invention is characterised in that, in the described plasma processing apparatus of the 1st or 2 invention, about the above-mentioned wire of Central Symmetry ground configuration of above-mentioned induction coupled antenna.
The 4th invents described plasma processing apparatus is characterised in that, in the described plasma processing apparatus of any one in 1st～3 inventions, above-mentioned wire has above-mentioned capacitor separately.
The described plasma processing apparatus of the 5th invention is characterised in that, in the described plasma processing apparatus of any one in 1st～4 inventions, with above-mentioned induction coupled antenna, configures above-mentioned wire with departing from.
The described plasma processing apparatus of the 6th invention is characterised in that, in the described plasma processing apparatus of any one in 1st～5 inventions, above-mentioned capacitor is the volume-variable capacitor, according to the density of the plasma in above-mentioned process chamber and at least one in density distribution, adjusts the static capacity of above-mentioned capacitor.
The described plasma processing apparatus of the 7th invention is characterised in that, in the described plasma processing apparatus of any one in 1st～6 inventions, adjusts the position of above-mentioned wire according to the distribution of the plasma in above-mentioned process chamber.
The described plasma processing apparatus of the 8th invention is characterised in that, in the described plasma processing apparatus of any one in 1st～7 inventions, forms a plurality of above-mentioned closed-loop paths in above-mentioned window member.
In order to achieve the above object, the described plasma generating equipment of the 9th invention generates plasma in pressure-reducing chamber, it is characterized in that possessing: the induction coupled antenna, and it is configured in the outside in above-mentioned pressure-reducing chamber, with high frequency electric source, is connected; And window member, it is present between the plasma in above-mentioned induction coupled antenna and above-mentioned pressure-reducing chamber, by electric conductor, formed, wherein, above-mentioned window member is divided into a plurality of cutting plates, above-mentioned a plurality of cutting plate does not directly contact to make each other each other and can not conduct, and at least part of cutting plate in above-mentioned a plurality of cutting plates is connected and forms closed-loop path by wire, and at least one wire in the above-mentioned wire of each above-mentioned cutting plate of connection of above-mentioned closed-loop path has capacitor.
The 10th invents described plasma generating equipment is characterised in that, in the described plasma generating equipment of the 9th invention, the static capacity of above-mentioned capacitor is adjusted to and makes the reactance of above-mentioned closed-loop path become negative value.
The described plasma generating equipment of the 11st invention is characterised in that, in the described plasma generating equipment of the 9th or 10 invention, about the above-mentioned wire of Central Symmetry ground configuration of above-mentioned induction coupled antenna.
In order to achieve the above object, the described antenna structure body of the 12nd invention possesses the induction coupled antenna be connected with high frequency electric source, it is characterized in that, possesses window member, this window member is present between above-mentioned induction coupled antenna and the plasma by above-mentioned induction coupled antenna generation, by electric conductor, formed, above-mentioned window member is divided into a plurality of cutting plates, above-mentioned a plurality of cutting plate does not directly contact to make each other each other and can not conduct, at least part of cutting plate in above-mentioned a plurality of cutting plate is connected and forms closed-loop path by wire, at least one wire in the above-mentioned wire of each above-mentioned cutting plate of connection of above-mentioned closed-loop path has capacitor.
The 13rd invents described antenna structure body is characterised in that, in the described antenna structure body of the 12nd invention, the static capacity of above-mentioned capacitor is adjusted to and makes the reactance of above-mentioned closed-loop path become negative value.
The described antenna structure body of the 14th invention is characterised in that, in the described antenna structure body of the 12nd or 13 invention, about the above-mentioned wire of Central Symmetry ground configuration of above-mentioned induction coupled antenna.
In order to achieve the above object, the described plasma generating method of the 15th invention is used the antenna structure body to generate plasma, and this antenna structure body possesses: the induction coupled antenna, and it is connected with high frequency electric source; And window member, it is present between above-mentioned induction coupled antenna and plasma, electric conductor, consist of, wherein, above-mentioned window member is divided into a plurality of cutting plates, above-mentioned a plurality of cutting plate is insulated from each other, the method is characterized in that, use wire that at least part of cutting plate in above-mentioned a plurality of cutting plates is connected to fetch and form closed-loop path, at least one wire in above-mentioned wire has capacitor, adjust the static capacity of above-mentioned capacitor, make the reactance of above-mentioned closed-loop path become negative value.
The described plasma generating method of the 16th invention is characterised in that, in the described plasma generating method of the 15th invention, above-mentioned capacitor is the volume-variable capacitor, according to the density of the plasma in above-mentioned process chamber and at least one in density distribution, adjusts the static capacity of above-mentioned capacitor.
the effect of invention
According to the present invention, be divided into a plurality of cutting plates with the induction coupled antenna that is connected high frequency electric source window member opposed and that formed by electric conductor, at least several cutting plates are connected and form closed-loop path by wire, at least one wire in the wire of each cutting plate of connection of this closed-loop path has capacitor, thereby closed-loop path has capacitor and opposed with the induction coupled antenna.Thus, the magnetic field produced from the induction coupled antenna makes closed-loop path generate induced current by electromagnetic induction, this induced current makes in closed-loop path to produce magnetic field, the magnetic field produced in this closed-loop path produces induction field, result is to generate plasma, therefore the capacity that makes capacitor changes and the induced current that closed-loop path generates is controlled in the reactance of adjusting closed-loop path, does not append new auxiliary antenna thus and can prevent that the formation efficiency of plasma from descending.That is, can make apparatus structure simply and can prevent that the formation efficiency of plasma from descending.
The accompanying drawing explanation
Fig. 1 be summary the cutaway view of the related plasma processing apparatus structure of embodiments of the present invention is shown.
Fig. 2 is the vertical view while along the hollow arrow in Fig. 1, observing window member in Fig. 1 and ICP antenna.
Fig. 3 is the faradic figure for the closed-loop path generation of key diagram 2.
Fig. 4 means the curve chart of static capacity and the faradic relation of lead capacitance device.
Fig. 5 means the vertical view of the first variation of the window member in Fig. 1.
Fig. 6 means the vertical view of the second variation of the window member in Fig. 1.
Fig. 7 means the vertical view of the 3rd variation of the window member in Fig. 1.
Fig. 8 means the vertical view of the 4th variation of the window member in Fig. 1.
Fig. 9 means the vertical view of the 5th variation of the window member in Fig. 1.
Figure 10 means the vertical view of the 6th variation of the window member in Fig. 1.
Figure 11 means the vertical view of the 7th variation of the window member in Fig. 1.
Figure 12 means the vertical view of the 8th variation of the window member in Fig. 1.
Figure 13 means the vertical view of the 9th variation of the window member in Fig. 1.
Figure 14 means the vertical view of the tenth variation of the window member in Fig. 1.
Figure 15 means the vertical view of the 11 variation of the window member in Fig. 1.
Figure 16 means the vertical view of the 12 variation of the window member in Fig. 1.
Figure 17 means the vertical view of the 13 variation of the window member in Fig. 1.
Figure 18 means the vertical view of the 14 variation of the window member in Fig. 1.
Figure 19 means the vertical view of the 15 variation of the window member in Fig. 1.
Figure 20 means the vertical view of the 16 variation of the window member in Fig. 1.
Figure 21 means the vertical view of the 17 variation of the window member in Fig. 1.
Figure 22 be summary the cutaway view of the related plasma generating equipment structure of embodiments of the present invention is shown.
description of reference numerals
10: plasma processing apparatus; 11: chamber; 12: mounting table; The 13:ICP antenna; 14: window member; 26: high frequency electric source; 27: cutting plate; 28: insulating material; 29: wire; 30: the wire of charged container; 31: closed-loop path; 34: induced current.
Embodiment
Below, illustrate referring to the drawings embodiments of the present invention.
At first, the plasma processing apparatus that embodiments of the present invention are related is described.
Fig. 1 be summary the cutaway view of the related plasma processing apparatus structure of embodiments of the present invention is shown.
In Fig. 1, plasma processing apparatus 10 for example possesses: chamber 11 (process chamber, pressure-reducing chamber), and it accommodates glass substrate (being designated hereinafter simply as " the substrate ") S that FPD uses; Mounting table 12, it is configured in the bottom of this chamber 11 and upper surface mounting substrate S; ICP antenna 13 (induction coupled antenna), it is configured to the mounting table 12 of chamber 11 inside opposed in chamber 11 outsides; And window member 14, the top that it forms chamber 11, be present between mounting table 12 and ICP antenna 13.
Mounting table 12 consists of electroconductive component, has the electrostatic chuck 17 of bringing into play the rectangular-shaped pedestal 16 of function and being formed at the upper surface of this pedestal 16 as base station.Pedestal 16 is connected with high frequency electric source 20 with integrator 19 via feeder rod used therein 18.High frequency electric source 20 will be lower the following High frequency power of High frequency power, for example 13.56MHz offer pedestal 16, make this pedestal 16 produce bias potentials.Thus, the ion in the plasma processing space PS between mounting table 12 and window member 14 generated is incorporated into the substrate S loaded in mounting table 12.
Set handling gas introduction port 23 in the beam section 12 of supporting window member 14, the processing gas that will provide from processing gas generator 24 imports in chamber 11.
In plasma processing apparatus 10, high-frequency current flows through ICP antenna 13, and this high-frequency current makes ICP antenna 13 produce the magnetic line of force.The magnetic line of force produced in the situation that in the past like that window member by dielectric, is formed through this window member, but as in the present embodiment, in the situation that window member forms slit by being formed at window member 14 or the gap between cutting plate by electric conductor, in the interior formation of chamber 11 magnetic field.Produce induction field when this magnetic field changes in time, the electronics accelerated by this induction field produces plasma with the molecule, the atomic collision that import to the processing gas in chamber 11.
Ion in the plasma generated is drawn towards substrate S by the bias potential of pedestal 16, free radical in this plasma is moved and is arrived substrate S, respectively substrate S is implemented to the etch processes of plasma treatment, for example physics, the etch processes of chemistry.
Fig. 2 is the vertical view while along the hollow arrow in Fig. 1, observing window member in Fig. 1 and ICP antenna.
In Fig. 2, window member 14 is divided into a plurality of cutting plates, the cutting plate 27 of four triangles for example, has the insulating material 28 consisted of dielectric members between each cutting plate 27.Thereby four cutting plates 27 can directly not contact and not make and can mutually conduct.
On the other hand, adjacent cutting plate 27 is connected by the wire 30 of a wire 29 or a charged container respectively each other, forms wire 30 and four closed-loop paths 31 that cutting plate 27 forms by three wires 29, a charged container in window member 14.Along the upper surface configuration ICP antenna 13 of window member 14, so ICP antenna 13 is approaching with closed-loop path 31, overlooks in the present embodiment closed-loop path 31 while observing and is surrounded by ICP antenna 13.As the capacitor in the wire 30 of charged container (hereinafter referred to as " lead capacitance device "), can use volume-variable capacitor or capacity fixed capacitor.In addition, in the present embodiment, wire 30 and the window member 14 of ICP antenna 13, insulating material 28, three wires 29, a charged container form the antenna structure bodies.
Fig. 3 is the faradic figure that the closed-loop path for key diagram 2 generates.
In Fig. 3, when high-frequency current 32 flows through ICP antenna 13, this high-frequency current 32 produces the magnetic line of force 33 passed through from the annulus 13a formed by ICP antenna 13.Closed-loop path 31 approaches with ICP antenna 13, and the magnetic line of force 33 therefore passed through from the annulus 13a of ICP antenna 13 also passes through from the annulus 31a formed by closed-loop path 31.Now, the electromagnetic induction because of the magnetic line of force 33 flows through induced current 34 in closed-loop path 31.This induced current 34 produces the magnetic line of force (hereinafter referred to as " the secondary magnetic line of force ") (not shown) passed through from annulus 31a.
In the present embodiment, the gap of the magnetic line of force 33 cutting plate 27 of adjacency from a plurality of cutting plates 27 that form window member 14 by and form magnetic field (hereinafter referred to as " main field ") in processing space PS, but the magnetic line of force 33 is described the mode of closed loop and is distributed with the stream of the electric current in ICP antenna 13, so main field produces in the annulus 13a of ICP antenna 13.In addition, make the secondary magnetic line of force of closed-loop path 31 generations of window member 14 also in processing space PS, form magnetic field (hereinafter referred to as " secondary field "), but the mode that the secondary magnetic line of force is described closed loop with the stream of the electric current in closed-loop path 31 is distributed, so secondary field produces in the annulus 31a of closed-loop path 31.
At this, if in processing space PS main field and secondary field towards the opposite, cancel out each other, thereby cause the induction field produced in processing space PS by magnetic field to weaken, the formation efficiency decline of plasma.
Therefore, in the present embodiment, for make main field and secondary field towards be made as same towards, make the flow direction of induced current 34 and the flow direction of high-frequency current 32 be made as same direction.As open in above-mentioned patent documentation 1, use following approximate expression (1) to mean to flow through the induced current 34 of closed-loop path 31.
I
IND≒-MωI
RF/(L
S-1/C
Sω)···(1)
At this, I
iNDfor induced current 34, M is the mutual inductance between ICP antenna 13 and closed-loop path 31, and ω is angular frequency, I
rFfor high-frequency current 32, L
sfor the self-induction of closed-loop path 31, C
sfor the static capacity of lead capacitance device, L
s-1/C
sthe reactance that ω is closed-loop path 31.
According to above-mentioned approximate expression (1), when the reactance that makes closed-loop path 31 is made as negative value, I
iNDthe symbol (plus or minus) of (induced current 34) becomes and I
rFthe symbol of (high-frequency current 32) is identical, and the flow direction of induced current 34 is identical with flowing to of high-frequency current 32, therefore in the present embodiment, and the static capacity (C of lead capacitance device
s) be adjusted to and make the reactance of closed-loop path 31 become negative value.In addition, in the situation that the lead capacitance device is the capacity fixed capacitor, by changing this lead capacitance device, adjust static capacity.
As mentioned above, be made as negative value by the reactance that makes closed-loop path 31, make the flow direction of induced current 34 and the flow direction of high-frequency current 32 be made as same direction, in processing space PS, main field and secondary field can be made as same towards, can strengthen the induction field produced in processing space PS.Its result, for example, even the magnetic line of force 33 only from a plurality of cutting plates 27 that form window member 14 gap of the cutting plate 27 of adjacency pass through, also can prevent that the formation efficiency of plasma from descending.
That is, the related plasma processing apparatus 10 according to present embodiment, do not need to append the antennas such as the coil of floating as above-mentioned patent documentation 1, can make apparatus structure simple, and can prevent that the formation efficiency of plasma from descending.
In addition, when generating induced current 34 expeditiously, by above-mentioned approximate expression (1), preferably reduce the absolute value of the reactance of closed-loop path 31, preferably increase the static capacity of lead capacitance device.
Fig. 4 means the curve chart of static capacity and the faradic relation of lead capacitance device.
Present inventors etc. are 10mTorr by exhaust apparatus 15 by the pressure setting in the chamber of plasma processing apparatus 10 11, as processing gas by Ar gas and O
2the mode that the mist of gas becomes 300sccm, 30sccm with flow respectively imports in chamber 11 from processing gas introduction port 23, the High frequency power that is 13.56MHz by frequency offers ICP antenna 13 from high frequency electric source 26 with 1000W, increase the static capacity of the lead capacitance device in closed-loop path 31, result is to have confirmed that as shown in the curve chart of Fig. 4 induced current 34 increases in the mode of acceleration formula.In addition, confirmed along with induced current 34 increases and high-frequency current 32 minimizings.
High-frequency current 32 reduce be due to, ratio that induced current 34 consumes is provided in the High frequency power provided to be increased and generates the ratio that high-frequency current 32 consumes and reduce.
In addition, confirmed that the increase degree of induced current 34 is greater than this situation of minimizing degree of high-frequency current 32.In other words, confirmed following situation: in the situation that the High frequency power of formed objects is offered to ICP antenna 13, not only make ICP antenna 13 flow through high-frequency current 32 but also the aggregate value of the high-frequency current 32 while making closed-loop path 31 flow through induced current 34 and induced current 34 is greater than and does not make closed-loop path 31 flow through induced current 34 and the value of high-frequency current 32 while only making ICP antenna 13 flow through high-frequency current 32.This be due to, when the static capacity that makes the lead capacitance device changes, comparing the result that the reactance that makes closed-loop path 31 significantly reduces with the reactance of ICP antenna 13 is that the formation efficiency of induced current 34 improves.
Present inventors etc. remain the state of 1000W in the High frequency power that will offer the 13.56MHz of ICP antenna 13 from high frequency electric source 26, under these conditions, with the static capacity that increases the lead capacitance device, the situation that the induced current 34 of 30A is flow through in closed-loop path 31 is compared the situation that does not make closed-loop path 31 flow through induced current 34, result is to confirm as the electron density of processing the plasma in the PS of space and approximately rise 40%.This be due to, flow through induced current 34 by making closed-loop path 31, can make the aggregate value of high-frequency current 32 and induced current 34 be greater than the value of the high-frequency current 32 while not making closed-loop path 31 flow through induced current 34, its result, can make the stronger magnetic field of the interior generation of chamber 11.
; the related plasma processing apparatus 10 according to present embodiment; even in the situation that the High frequency power of formed objects is offered to ICP antenna 13; except with ICP antenna 13, also generating induced current 34 with closed-loop path 31 together, can improve thus the formation efficiency of plasma.
In addition, because the formation efficiency of induced current 34 is high, therefore in the situation that when the High frequency power of formed objects is offered to ICP antenna 13 and further improves the formation efficiency of plasma, preferably within the reactance of closed-loop path 31 keeps the scope of negative value, increase the static capacity of lead capacitance device and reduce the absolute value of the reactance of closed-loop path 31, increase induced current 34.And, when controlling plasma density, plasma will increased in the situation that the density in chamber 11, reduce the absolute value of the reactance of closed-loop path 31 by the static capacity that increases the lead capacitance device, increase thus induced current 34 and the formation efficiency of raising plasma, thus, can improve the density of plasma, plasma will reduced in the situation that the density in chamber 11, improve the absolute value of the reactance of closed-loop path 31 by the static capacity that reduces the lead capacitance device, reduce thus induced current 34 and the formation efficiency of reduction plasma, thus, can reduce the density of plasma.
Produce secondary field in the annulus 31a of closed-loop path 31, secondary field also produces induction field, by adjusting 31 position, closed-loop path, can control the distribution of plasma in chamber 11 thus.For example, shown in Fig. 2, about Central Symmetry ground each wire 29 of configuration of ICP antenna 13 and the wire 30 of charged container, thereby the Central Symmetry ground about ICP antenna 13 forms closed-loop path 31, can generate about the Central Symmetry ground of ICP antenna 13 plasma of secondary field thus.In addition, in Fig. 2, the wire 3 of charged container is only one, therefore form about the asymmetrical configuration in ICP antenna 13 center, but as described in hereinafter, for example, across ICP antenna 13 center and the wire 29 of opposed position also is replaced by the wire of charged container, thereby form symmetrical configuration, can generate thus the better plasma of symmetry.
In addition, produce main field in the annulus 13a of ICP antenna 13, main field produces induction field, so viewpoint of the homogenizing of the plasma treatment based on substrate S is implemented, as shown in Figure 2, preferably make ICP antenna 13 center consistent with chamber 11 center, thus, be not only the plasma of secondary field, also can generate about the Central Symmetry ground of chamber 11 plasma of main field.
And, also can the distribution in chamber 11 adjust 31 position, closed-loop path according to plasma, for example, in the situation that the reduction of the density of the plasma of chamber 11 interior central parts, as shown in Figure 5, near the center configuration wire 29 of ICP antenna 13, the wire 30 of charged container, near in ICP antenna 13, being formed centrally closed-loop path 31 (the first variation).Thus, can be at ICP antenna 13 center, be the plasma that concentrated area, chamber 11 center generates secondary field, and can improve the distribution of plasma in chamber 11.
Above, use execution mode that the present invention has been described, but the present invention is not limited to above-mentioned execution mode.
For example, based on produce the viewpoint of plasma on a large scale in chamber 11, as shown in Fig. 2, Fig. 5, preferably from ICP antenna 13, configure the wire 30 of each wire 29, charged container with departing from, closed-loop path 31 is departed from from ICP antenna 13.Thus, can produce in the position of separating with the plasma of main field the plasma of secondary field.At this, depart from refer to can be not overlapping on the direction of the face perpendicular to parallel with closed-loop path 31, ICP antenna 13 position relationship.
In addition, each closed-loop path 31 for example can have the wire 30 (the second variation) of a plurality of charged containers as shown in Figure 6, and (the 3rd variation) as shown in Figure 7 for example also can be connected the wire 30 of the charged container of each cutting plate 27 whole use in closed-loop path 31.Thus, the symmetry of closed-loop path 31 improves, and, can further improve chamber 11 in the being distributed symmetrically property by the plasma of secondary field generation.
In addition, even for example in the situation that window member 14 is split into identical 16 cutting plates 27, each cutting plate 27 can consist of the leg-of-mutton cutting plate shown in Fig. 8 (the 4th variation), also can consist of the cutting plate of the rectangle shown in Fig. 9 (the 5th variation).
And, also can form a plurality of closed-loop paths 31 in window member 14.Particularly, in the situation that a plurality of ICP antennas 13 of configuration, preferably with each ICP antenna 13 one by one and approach each closed-loop path 31 of configuration accordingly.Thus, can generate expeditiously induced current 34 in each closed-loop path 31 of correspondence by the high-frequency current 32 that flows through each ICP antenna 13.In addition, as shown in Figure 6, shape ground configures each ICP antenna 13 with one heart, or, as shown in figure 10, also can configure side by side respectively each ICP antenna 13 (the 6th variation).Now, by adjusting respectively the reactance of each closed-loop path 31, adjust respectively the intensity of 31 secondary fields that produce along each closed-loop path, thus, density that can the Partial controll plasma in chamber 11, its result, can control the density distribution of plasma more subtly.
In addition, in the situation that form a plurality of closed-loop paths 31 in window member 14, each closed-loop path 31 does not need corresponding from different ICP antennas 13 respectively, for example, shown in Figure 11, Figure 12, can configure four closed-loop paths 31 (the 7th variation) to an ICP antenna 13, also can be to four ICP antennas, 13 four closed-loop paths 31 of each self-configuring (the 8th variation).And, as shown in figure 13, can, to an ICP antenna 13 configuration eight closed-loop paths 31 (the 9th variation), as shown in figure 14, also can configure 16 closed-loop paths 31 (the tenth variation) to an ICP antenna 13.
And, the present invention also can be applied to discoideus semiconductor crystal wafer is implemented the plasma processing apparatus of plasma treatment, in this case, window member 14 is discoideus, but as shown in Figure 15, Figure 16, be divided into a plurality of cutting plates 27, with each ICP antenna 13, closed-loop path 31 be set accordingly.In this case, also can in each closed-loop path 31, use the wire 30 of wire 29, charged container to be connected (Figure 15, the 11 variation) each cutting plate 27, or also can only use the wire 30 of charged container to be connected each cutting plate 27 (Figure 16, the 12 variation).
In addition, the present invention also can only be applied to the part of window member 14, and in this case, as shown in figure 17, the part of window member 14 is divided into a plurality of cutting plates 27, with each ICP antenna 13, closed-loop path 31 (the 13 variation) is set accordingly.
And two cutting plates 27 of adjacency are not only to use the wire 30 of a wire 29 or charged container to be connected, and as shown in figure 18, also can use the wire 30 of a plurality of wires 29, charged container to be connected (the 14 variation).Thus, can easily form a plurality of closed-loop paths 31.
In addition, as shown in figure 19, insulating material 28 between two cutting plates 27 of adjacency effectively can be used is dielectric, static capacity to a part of 28a of insulating material 28 is adjusted and is formed capacitor (the 15 variation) with a part of 28a of two cutting plates 27 and insulating material 28, as shown in figure 20, also can make the insulating material 28 between two cutting plates 27 of adjacency a part of 28b the thickness attenuation and form capacitor (the 16 variation) with a part of 28b of two cutting plates 27 and insulating material 28.Thus, do not use the wire 30 of charged container and can form closed-loop path 31, and can cut down the parts number of packages.
And the wire 30 of each wire 29, charged container also can not be configured to the Central Symmetry about ICP antenna 13.For example, shown in Figure 21, also the wire of charged container 30, a part of wire 29 can be configured to the center near ICP antenna 13, and remaining wire 29 is configured to away from ICP antenna 13 center (the 17 variation).Thus, can make closed-loop path 31 in ICP antenna 13 and chamber 11 center uneven distribution.Its result, for example, the reasons such as structure based on chamber 11 inside, the plasma of main field is in the situation that the interior uneven distribution of chamber 11, make closed-loop path 31 uneven distributions so that the low density part of the plasma of itself and main field is opposed, in chamber 11, can make plasma be uniformly distributed.
In addition, the present invention improves the formation efficiency of plasma, therefore not only be applied in inside, substrate S be implemented the plasma processing apparatus 10 of plasma treatment, also can be applied to be used as the plasma generating equipment of the plasma source of plasma in various uses.For example, shown in Figure 22, as having applied plasma generating equipment 35 of the present invention, be from the plasma processing apparatus 10 of Fig. 1 remove mounting tables 12 and the structural element that is associated with this mounting table 12 device, can offer as from chamber 11, taking out plasmas the remote plasma body device at other position.
Claims (16)
1. a plasma processing apparatus possesses: process chamber, and it accommodates substrate; Mounting table, it is configured in the inside of above-mentioned process chamber and loads aforesaid substrate; And the induction coupled antenna, its outside at above-mentioned process chamber is configured to above-mentioned mounting table opposed, and is connected with high frequency electric source, and this plasma processing unit is characterised in that,
Also possess window member, this window member forms the wall section with the opposed above-mentioned process chamber of above-mentioned induction coupled antenna, is present between above-mentioned mounting table and above-mentioned induction coupled antenna, by electric conductor, formed,
Above-mentioned window member is divided into a plurality of cutting plates,
Above-mentioned a plurality of cutting plate does not directly contact to make each other each other and can not conduct,
At least part of cutting plate in above-mentioned a plurality of cutting plate is connected and forms closed-loop path by wire,
At least one wire in the above-mentioned wire of each above-mentioned cutting plate of connection of above-mentioned closed-loop path has capacitor.
2. plasma processing apparatus according to claim 1, is characterized in that,
The static capacity of above-mentioned capacitor is adjusted to and makes the reactance of above-mentioned closed-loop path become negative value.
3. plasma processing apparatus according to claim 1 and 2, is characterized in that,
The above-mentioned wire of Central Symmetry ground configuration about above-mentioned induction coupled antenna.
4. according to the described plasma processing apparatus of any one in claim 1～3, it is characterized in that,
Above-mentioned wire has above-mentioned capacitor separately.
5. according to the described plasma processing apparatus of any one in claim 1～4, it is characterized in that,
Configure above-mentioned wire with above-mentioned induction coupled antenna with departing from.
6. according to the described plasma processing apparatus of any one in claim 1～5, it is characterized in that,
Above-mentioned capacitor is the volume-variable capacitor, according to the density of the plasma in above-mentioned process chamber and at least one in density distribution, adjusts the static capacity of above-mentioned capacitor.
7. according to the described plasma processing apparatus of any one in claim 1～6, it is characterized in that,
Adjust the position of above-mentioned wire according to the distribution of the plasma in above-mentioned process chamber.
8. according to the described plasma processing apparatus of any one in claim 1～7, it is characterized in that,
Form a plurality of above-mentioned closed-loop paths in above-mentioned window member.
9. a plasma generating equipment generates plasma in pressure-reducing chamber, it is characterized in that,
Possess: the induction coupled antenna, it is configured in the outside in above-mentioned pressure-reducing chamber, with high frequency electric source, is connected; And window member, it is present between the plasma in above-mentioned induction coupled antenna and above-mentioned pressure-reducing chamber, by electric conductor, is formed,
Wherein, above-mentioned window member is divided into a plurality of cutting plates,
Above-mentioned a plurality of cutting plate does not directly contact to make each other each other and can not conduct,
At least part of cutting plate in above-mentioned a plurality of cutting plate is connected and forms closed-loop path by wire,
At least one wire in the above-mentioned wire of each above-mentioned cutting plate of connection of above-mentioned closed-loop path has capacitor.
10. plasma generating equipment according to claim 9, is characterized in that,
The static capacity of above-mentioned capacitor is adjusted to and makes the reactance of above-mentioned closed-loop path become negative value.
11. according to the described plasma generating equipment of claim 9 or 10, it is characterized in that,
The above-mentioned wire of Central Symmetry ground configuration about above-mentioned induction coupled antenna.
12. an antenna structure body, possess the induction coupled antenna be connected with high frequency electric source, it is characterized in that,
Possess window member, this window member is present between above-mentioned induction coupled antenna and the plasma by above-mentioned induction coupled antenna generation, by electric conductor, formed,
Above-mentioned window member is divided into a plurality of cutting plates,
Above-mentioned a plurality of cutting plate does not directly contact to make each other each other and can not conduct,
At least part of cutting plate in above-mentioned a plurality of cutting plate is connected and forms closed-loop path by wire,
At least one wire in the above-mentioned wire of each above-mentioned cutting plate of connection of above-mentioned closed-loop path has capacitor.
13. antenna structure body according to claim 12, is characterized in that,
The static capacity of above-mentioned capacitor is adjusted to and makes the reactance of above-mentioned closed-loop path become negative value.
14. according to the described antenna structure body of claim 12 or 13, it is characterized in that,
The above-mentioned wire of Central Symmetry ground configuration about above-mentioned induction coupled antenna.
15. a plasma generating method, used the antenna structure body to generate plasma, this antenna structure body possesses: the induction coupled antenna, and it is connected with high frequency electric source; And window member, it is present between above-mentioned induction coupled antenna and plasma, electric conductor, consists of, and wherein, above-mentioned window member is divided into a plurality of cutting plates, and above-mentioned a plurality of cutting plates are insulated from each other, the method is characterized in that,
Use wire that at least part of cutting plate in above-mentioned a plurality of cutting plates is connected to fetch and form closed-loop path, at least one wire in above-mentioned wire has capacitor,
Adjust the static capacity of above-mentioned capacitor, make the reactance of above-mentioned closed-loop path become negative value.
16. plasma generating method according to claim 15, is characterized in that,
Above-mentioned capacitor is the volume-variable capacitor, according to the density of the plasma in process chamber and at least one in density distribution, adjusts the static capacity of above-mentioned capacitor.
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| KR101826883B1 (en) | 2016-11-03 | 2018-02-08 | 인투코어테크놀로지 주식회사 | Inductive Coil Structure And Inductively Coupled Plasma Apparatus |
| KR102071517B1 (en) * | 2018-05-30 | 2020-01-30 | 인베니아 주식회사 | Apparatus for processing inductively coupled plasma |
| KR102511989B1 (en) * | 2018-10-05 | 2023-03-20 | 주식회사 원익아이피에스 | Inductively coupled plasma processing apparatus |
| KR102543128B1 (en) * | 2018-10-05 | 2023-06-13 | 주식회사 원익아이피에스 | Inductively coupled plasma processing apparatus |
| KR102543131B1 (en) * | 2018-10-05 | 2023-06-14 | 주식회사 원익아이피에스 | Inductively coupled plasma processing apparatus |
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