CN103985624A - Inductive coupling plasma processing device - Google Patents
Inductive coupling plasma processing device Download PDFInfo
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- CN103985624A CN103985624A CN201410039246.XA CN201410039246A CN103985624A CN 103985624 A CN103985624 A CN 103985624A CN 201410039246 A CN201410039246 A CN 201410039246A CN 103985624 A CN103985624 A CN 103985624A
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- slit
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- plasma processing
- metal window
- processing device
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
The invention provides an inductive coupling plasma processing device capable of performing uniform plasma processing on a large processed substrate with a metallic window. The inductive coupling plasma processing device performs inductive coupling plasma processing on a rectangular substrate and comprises a processing chamber receiving the substrate, a high-frequency antenna for generating the inductive coupling plasma in the processing chamber, and a metallic window configured between a plasma generating area for generating the inductive coupling plasma and the high-frequency antenna and arranged corresponding to the substrate. The metallic window is divided into multiple areas by a slit (70) and comprises a long side area (202b) corresponding to a long side (2b) and a short side area (202a) corresponding to a short side (2a). An outer side slit (71) of the slit (70) comprises a short side portion (71a) corresponding to the short side area and a long side portion (71b) corresponding to the long side area, wherein the width of the short side portion is more than that of the long side portion.
Description
Technical field
The processed substrate such as glass substrate that the present invention relates to the flat-panel monitor (FPD:Flat Panel Display) to manufacture use is implemented the inductance coupling plasma processing device of plasma treatment.
Background technology
In flat-panel monitor (FPD) manufacturing processes such as liquid crystal indicator (LCD), there is the operation of glass substrate being carried out to the plasma treatment of plasma etching, film forming processing etc., in order to carry out such plasma treatment, can use the various plasma processing apparatus such as plasma-etching apparatus, plasma CVD equipment.As plasma processing apparatus, the capacitance coupling plasma processing unit that use at present more, but recently, having inductively coupled plasma (the Inductively Coupled Plasma:ICP) processing unit that can obtain the very large advantage of highdensity plasma under condition of high vacuum degree receives publicity.
Inductance coupling plasma processing device is at the upside configuring high-frequency antenna of the dielectric window of the roof of the process chamber of the processed substrate of formation storage, to supply processing gas in process chamber and to this high frequency antenna supply high frequency electric power, in process chamber, produce thus inductively coupled plasma, and the plasma treatment of utilizing this inductively coupled plasma to specify processed substrate.As the high frequency antenna of inductance coupling plasma processing device, the flat plane antenna of the plane predetermined pattern of multiplex formation.As such inductance coupling plasma processing device, for example known in patent documentation 1 disclosed plasma processing apparatus.
Recently, the size of processed substrate maximizes, for example, in the rectangular shape glass substrate of using at LCD, the length on minor face × length limit is from the size of about 1500mm × about 1800mm to the size of about 2200mm × about 2400mm, further significantly maximize to the size of about 2800mm × about 3000mm.
Be accompanied by the maximization of so processed substrate, the dielectric window that forms the roof of inductance coupling plasma processing device is also maximizing, but dielectric window generally adopts quartz or pottery and so on crisp material, is therefore unsuitable for maximizing.So the mode of for example being recorded as patent documentation 2, deals with the maximization of dielectric window by cutting apart quartz glass.
But towards the further maximization of processed substrate, the method for cutting apart dielectric window of utilizing patent documentation 2 to record, is also difficult to reply and maximizes.
So, propose dielectric window is replaced into metal window and gains in strength, tackle thus the technology (patent documentation 3) of the maximization of processed substrate.In addition, also propose a kind of as this metal window, use along its week direction and carry out electrically insulated from one another and be divided into plural first cutting apart, and the second metal window of cutting apart that carries out electrically insulated from one another and cut apart along the direction of intersecting with Zhou Fangxiang, for large-scale processed substrate, the controlled good technology (patent documentation 4) that plasma is distributed.In the technology of this metal window of use, metal window does not make the magnetic line of force see through, and therefore has the mechanism different from the situation that uses dielectric window.
Prior art document
Patent documentation
Patent documentation 1: No. 3077009 communique of Japan Patent
Patent documentation 2: No. 3609985 communique of Japan Patent
Patent documentation 3: TOHKEMY 2011-29584 communique
Patent documentation 4: TOHKEMY 2012-227427 communique
Summary of the invention
The technical problem solving is wanted in invention
Although the technology of patent documentation 3,4 can be tackled the maximization of processed substrate, because the mechanism of plasma generation is different with the situation of dielectric window, there is other problem in the maximization of metal window therefore.That is, the plasma processing apparatus that has this metal window in employing, the distribution of plasma is subject to the impact such as shape, partitioning scheme of metal window, has processing speed in the face of processed substrate to be difficult to become uniform problem.Particularly, in the case of adopting accordingly the metal window of rectangular shape with rectangular substrate, at long side and short brink, the width difference of window, the tendency that long side one side's who exist compared with the short brink of the wider width of window, the width of window is narrower plasma treatment speed uprises.Therefore, be difficult to carry out the plasma treatment that uniformity is high.
The present invention In view of the foregoing completes, and its object is to provide a kind of inductance coupling plasma processing device that can utilize metal window large-scale processed substrate to be carried out to uniform plasma treatment.
For the technical scheme of technical solution problem
In order to address the above problem, a first aspect of the present invention provides a kind of inductance coupling plasma processing device of substrate being implemented to inductively coupled plasma processing, and this inductance coupling plasma processing device is characterised in that, comprising: the process chamber of storage substrate; Generate the high frequency antenna of inductively coupled plasma for the region of the placement substrate in above-mentioned process chamber; And metal window, it is configured between the plasma formation zone and above-mentioned high frequency antenna that generates above-mentioned inductively coupled plasma, arrange accordingly with substrate, wherein, above-mentioned metal window is divided into multiple regions by slit, above-mentioned slit at least its part to be formed as width different with position, thus, can adjust the distribution that is formed on the induction field of above-mentioned process chamber by the electric current that is supplied to above-mentioned high frequency antenna.
In above-mentioned first aspect, can adopt following structure: above-mentioned metal window comprises region that width is relatively wide and the region of width relative narrower, in above-mentioned slit, the width of the part corresponding with the region of above-mentioned width relative narrower is than large with the width of part corresponding to the relatively wide region of above-mentioned width.
In addition, can adopt following structure: above-mentioned metal window comprises the long side region corresponding with the long limit of above-mentioned metal window and the short brink region corresponding with the minor face of above-mentioned metal window, above-mentioned slit comprises first slit corresponding with above-mentioned short brink region and second slit corresponding with above-mentioned long side region, and the width of above-mentioned the first slit is larger than the width of above-mentioned the second slit.Now, can adopt following structure: above-mentioned the first slit forms parallelly with above-mentioned minor face, above-mentioned the second slit forms parallelly with above-mentioned long limit.
Can adopt following structure: above-mentioned slit comprises the concentric rectangular slot of profile with the above-mentioned metal window of rectangular shaped, the minor face that above-mentioned the first slit is above-mentioned rectangular slot, the long limit that above-mentioned the second slit is above-mentioned rectangular slot.Now, also can adopt following structure: above-mentioned slit is concentric shape and comprises multiple above-mentioned rectangular slot, in above-mentioned rectangular slot, at least outermost rectangular slot comprises above-mentioned the first slit and above-mentioned the second slit.Above-mentioned slit also can comprise the crossed slot of the direction of intersecting with above-mentioned rectangular slot.Can adopt following structure: the diagonal angle wire that above-mentioned crossed slot is above-mentioned rectangular slot.
Preferably above-mentioned the first slit is formed as parallel with the antenna wire rod of high frequency antenna with at least one party in above-mentioned the second slit.Can adopt following structure: above-mentioned high frequency antenna is arranged in the face corresponding with above-mentioned metal window, above-mentioned antenna wire rod is at the Zhou Fangxiang of above-mentioned metal window upper rotary cabling.
A second aspect of the present invention provides a kind of inductance coupling plasma processing device of substrate being implemented to inductively coupled plasma processing, and this inductance coupling plasma processing device is characterised in that, comprising: the process chamber of storage substrate; Generate the high frequency antenna of inductively coupled plasma for the region of the placement substrate in above-mentioned process chamber; And metal window, it is configured between the plasma formation zone and above-mentioned high frequency antenna that generates above-mentioned inductively coupled plasma, arrange accordingly with substrate, wherein, above-mentioned metal window is divided into multiple regions by slit, the variable-width of at least a portion of above-mentioned slit, makes it possible to adjust the distribution that is formed on the induction field of above-mentioned process chamber by the electric current that is supplied to above-mentioned high frequency antenna.
In above-mentioned second aspect, can adopt following structure: above-mentioned metal window comprises region that width is relatively wide and the region of width relative narrower, the variable-width of at least a portion of above-mentioned slit, the width that makes part corresponding with the region of above-mentioned width relative narrower in above-mentioned slit is than large with the width of part corresponding to the relatively wide region of above-mentioned width.
In addition, can adopt following structure: in above-mentioned slit, the part of variable-width has the lid that the width of above-mentioned slit is adjusted.Now, a side region conducting of preferred above-mentioned lid and the above-mentioned metal window that is split to form by the part of variable-width in above-mentioned slit, with the opposing party's region insulation.
Invention effect
According to the present invention, by metal window to be divided into multiple regions by the mode of slit mutually insulated, make at least a portion of slit be formed as width different with position, the distribution that is formed on the induction field in process chamber by the electric current that is supplied to high frequency antenna is adjusted.Thus, in large substrate, for example different with the width of minor face side window at long side, even if the tendency that long side one side's who exist compared with the short brink of the wider width of window, the width of window is narrower plasma treatment speed uprises, also can utilize metal window to carry out uniform plasma treatment.
Brief description of the drawings
Fig. 1 is the sectional view that roughly represents the inductance coupling plasma processing device of the first execution mode of the present invention.
Fig. 2 represents metal window that the inductance coupling plasma processing device of the first execution mode of the present invention uses and the plane graph of high frequency antenna.
Fig. 3 is the figure that represents the generating principle of the inductively coupled plasma of the first execution mode of the present invention.
Fig. 4 is another the routine plane graph that represents metal window.
Fig. 5 is another the routine plane graph that represents high frequency antenna.
Fig. 6 is the plane graph that represents the another example of high frequency antenna.
Fig. 7 is metal window while representing that the impact that the width plasma excitation current of slit width and metal window is produced is simulated and the stereogram of high frequency antenna.
Fig. 8 is the figure that represents the relation of slit width (Teflon width) and plasma exciatiaon electric current.
Fig. 9 is the figure that represents the width of metal window and the relation of plasma exciatiaon electric current.
Figure 10 is the sectional view that partly represents the metal window of the inductance coupling plasma processing device of the second execution mode of the present invention.
Figure 11 is another the routine sectional view that partly represents the metal window of the inductance coupling plasma processing device of the second execution mode of the present invention.
Figure 12 is the sectional view that partly represents the another example of the metal window of the inductance coupling plasma processing device of the second execution mode of the present invention.
Description of reference numerals
1: main body container
2: metal window
2a: minor face
2b: long limit
3: antenna chamber
4: process chamber
5: bearing support
6: backbar
7: slit
7a: insulating element
13: high frequency antenna
71: outboard slot
71a: short brink part
71b: long side part
150: lid
202: pars intermedia
202a: short brink region
202b: long side region
211,212: partitioning portion
G: substrate (rectangular substrate).
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are described.
< the first execution mode >
Fig. 1 is the sectional view that roughly represents the inductance coupling plasma processing device of the first execution mode of the present invention.Inductance coupling plasma processing device shown in Fig. 1 can be used in for example plasma treatment such as etching, the ashing processing of resist film of the metal film when forming thin-film transistor on glass substrate, ITO film, oxide-film etc. at FPD of rectangular substrate.As FPD, can enumerate liquid crystal display (LCD), electroluminescent (Electro Luminescence herein; EL) display, plasm display panel (PDP) etc.In addition, be not limited to FPD glass substrate, can also be used for solar panel glass substrate to carry out above-mentioned same plasma treatment.
This inductance coupling plasma processing device has the airtight main body container 1 of the square tube shape that the aluminium crossed through anodized by for example internal face of conductive material forms.This main body container 1 can decompose to be assembled, via earth connection 1a by electrical ground.Main body container 1 by with main body container 1 insulate form rectangular-shaped metal window 2 be divided into up and down antenna chamber 3 and process chamber 4.Metal window 2 forms the roof of process chamber 4.Metal window 2 is for example made up of for example aluminium of metal or the aluminium-containing alloy of nonmagnetic material and conductivity.In addition, in order to improve the plasma-resistance of metal window 2, also can dielectric film, dielectric cap be set on the surface of the process chamber of metal window 24 sides.Can enumerate anode oxide film, ceramic coated film as dielectric film.In addition, as dielectric cap, can enumerate the dielectric cap of quartz system or pottery system.
Between the sidewall 3a of antenna chamber 3 and the sidewall 4a of process chamber 4, be provided with interior side-prominent bearing support 5 and backbar 6 to main body container 1.Bearing support 5 and backbar 6 are made up of conductive material, are preferably made up of metals such as aluminium.
As described later, metal window 2 is split into multiple parts.Multiple parts of cutting apart and form are separated by slit 7 each other, and these multiple parts are supported on bearing support 5 and backbar 6 via insulating element 7a.Backbar 6 is formed as being hung on by multiple suspension rods (not shown) state at the top of main body container 1.In addition, part or all of slit 7 also can adopt the structure that is only filled with insulating element 7a.
Backbar 6 doubles as the spray framework of supplying with use into processing gas in this example.In the situation that backbar 6 doubles as spray framework, be formed with the gas flow path 8 extending in parallel with the processed face of processed substrate in the inside of backbar 6.Be formed with the multiple gas discharge hole 8a to the interior ejection processing of process chamber 4 gas at gas flow path 8.Gas flow path 8 is supplied with and processed gas via supply pipe 20a from treating-gas supply system 20, processing gas is discharged to the inside of process chamber 4 from gas discharge hole 8a.Wherein, can on metal window 2, gas discharge hole be set and discharge and process gas instead and supply with from backbar 6 and process gases, in addition, supply with the basis of processing gases from backbar 6, can also on metal window 2, gas discharge hole be set and discharge processing gas.
In antenna chamber 3 on metal window 2, the distance piece 14 being made up of insulating element with the mode in the face of metal window 2 and utilization leaves and disposes high frequency antenna 13 with metal window 2.
High frequency antenna 13 is connected with the first high frequency electric source 18 via power supply part 15, supply lines 16, adaptation 17.And, during plasma treatment, for example via adaptation 17, supply lines 16 and power supply part 15, high frequency antenna 13 is supplied with the High frequency power of for example 13.56MHz from the first high frequency electric source 18, form thus induced field, utilize this induced field by the electric current flowing through along the lower surface of metal window 2 as described later, plasma formation zone in process chamber 4 forms induction field, utilizes this induction field to make the processing gas supplied with from the multiple gas discharge hole 8a plasma formation zone in process chamber 4 by plasma.
Below in process chamber 4, with across metal window 2 mode relative with high frequency antenna 13, be provided with the mounting table 23 for loading glass substrate for FPD (following brief note the is substrate) G as the rectangular shape of processed substrate.Mounting table 23 is made up of the conductive material aluminium that for example surface is crossed by anodized.The substrate G loading in mounting table 23 is kept by electrostatic chuck (not shown) absorption.
Mounting table 23 is accommodated in insulator frame 24, and is supported on the pillar 25 of hollow.Pillar 25 maintains airtight conditions and connects the bottom of main body container 1, is supported on the elevating mechanism (not shown) being disposed in outside main body container 1, taking out of while moving into substrate G, is driven mounting table 23 by elevating mechanism on above-below direction.In addition, between the storage insulator frame 24 of mounting table 23 and the bottom of main body container 1, be equipped with the bellows (bellows) 26 that surrounds airtightly pillar 25, thus, even if mounting table 23 moves up and down, also can ensure the air-tightness in process chamber 4.In addition, be provided with for moving into and take out of moving into of substrate G and take out of mouthful 27a and take out of by moving into the family of power and influence 27 that mouthful 27a opens and closes at the sidewall 4a of process chamber 4.
Mounting table 23, by being arranged at the supply lines 25a in the pillar 25 of hollow, is connected with the second high frequency electric source 29 via adaptation 28.This high frequency electric source 29 applies the High frequency power High frequency power that for example frequency is 3.2MHz of biasing use in plasma treatment to mounting table 23.The automatic bias generating by the High frequency power by this biasing use, introduces substrate G effectively by the ion in the plasma of process chamber 4 interior generations.
And, in mounting table 23, be provided with in order to control the temperature of substrate G the temperature control device and the temperature sensor (all not shown) that are formed by heating unit, refrigerant flow paths etc. such as ceramic heaters.For pipe arrangement and the distribution of these mechanisms, parts, all export to outside main body container 1 by the pillar 25 of hollow.
The bottom of process chamber 4 is connected with the exhaust apparatus 30 that comprises vacuum pump etc. via blast pipe 31.Utilize this exhaust apparatus 30, process chamber 4 is carried out to exhaust, in plasma treatment, in process chamber 4, be set and maintain the vacuum atmosphere (for example 1.33Pa) of regulation.
Be formed with cooling space (not shown) in the rear side loading in the substrate G of mounting table 23, be provided with for supplying with the He(helium as the heat transmission gas of fixation pressure) the He air-flow road 41 of gas.Like this rear side of substrate G is supplied with to heat transmission gas, under vacuum, can avoid thus temperature rise, the variations in temperature of substrate G.
The each formation portion of this inductance coupling plasma processing device is for being connected controlled structure with the control part 100 that comprises microprocessor (computer).In addition, control part 100 is connected with comprising the user interface 101 that carries out keyboard, the display that the working condition of inductance coupling plasma processing device is shown visually etc. of the input operations such as the order input for managing inductance coupling plasma processing device by operator.And, control part 100 is connected with storage part 102, and this storage part 102 stores for the control by control part 100 and realizes the control program of the various processing of being carried out by inductance coupling plasma processing device, is processing scheme for the program that respectively forms portion's execution processing that makes inductance coupling plasma processing device according to treatment conditions.Processing scheme is stored in the storage medium in storage part 102.Storage medium can be both hard disk, the semiconductor memory being built in computer, can be also the movably storage medium such as CDROM, DVD, flash memory.In addition, also can make from other device for example via the suitable transfer scheme of special circuit.And, can be as required, processing scheme is arbitrarily read in the instruction based on from user interface 101 etc. from storage part 102 carries out control part 100, under the control of control part 100, expects to process in inductance coupling plasma processing device.
Then,, with reference to Fig. 2, metal window 2 and high frequency antenna 13 are described.
As shown in Figure 2, the metal window 2 of rectangular shape has minor face 2a and long limit 2b.In addition, metal window 2 is divided into the slit 7 of multiple parts, has along the Zhou Fangxiang of metal window 2 and be formed as rectangular-shaped and concentric outboard slot 71 and inner side slit 72.Metal window 2 is divided into circumference 201, pars intermedia 202 and 203 3 of inside portions part by outboard slot 71 and inner side slit 72.In addition, slit 7 has along the direction of intersecting with Zhou Fangxiang particularly along radiation direction, forms cornerwise diagonal slits 73 of the outboard slot 71 of rectangular shape.By diagonal slits 73, pars intermedia 202 is divided into two short brink region 202as and with long limit 2b corresponding two the long side region 202bs corresponding with minor face 2a by 4, and inside portion 203 is also divided into two short brink region 203as and with long limit 2b corresponding two the long side region 203bs corresponding with minor face 2a by 4.On circumference 201, not having slit, is architrave shape.This circumference 201 is grounded, by the insulating element 7a in outboard slot 71 with than its SI semi-insulation more in the inner part.
Be formed at slit 7 on metal window 2 at least its part to be formed as width different with position, can adjust thus high frequency antenna 13 is supplied with to electric current and in the distribution of the induction field of process chamber 4 interior formation.Particularly, in slit 7, the width D of the short brink part 71a corresponding with minor face 2a of outboard slot 71
sSbe greater than the width D of the long side part 71b corresponding with long limit 2b
sL(, there is D
sS> D
sLrelation).Short brink part 71a is parallel with minor face 2a, and long side part 71b is parallel with long limit 2b.In addition, the width D of the short brink region 202a of the pars intermedia 202 of metal window 2
wSbe greater than the width D of long side region 202b
wL(, D
wS> D
wL).
High frequency antenna 13 is spaced apart diametrically in this example, there is the antenna part of two revolution cablings of outside antenna part 13a and inner side antenna part 13b, the pars intermedia 202 of outside antenna part 13a and metal window 2 arranges accordingly, and the inside portion 203 of inner side antenna part 13b and metal window 2 arranges accordingly.In this example, outside antenna part 13a is formed as making conductive material for example antenna wire rod 130 to be formed as to the coil antenna of ring-type, and inner side antenna part 13b is formed as making antenna wire rod 130 to be formed as Vorticose vortex shape antenna.Therefore, in the outboard slot 71 of slit 7, short brink part 71a forms parallelly with the antenna wire rod 130 of high frequency antenna 13 with long side part 71b.In addition, in slit 7, adjust the part of width in order to adjust Electric Field Distribution as long as form abreast with the antenna wire rod 130 of high frequency antenna 13.
Like this, high frequency antenna 13 is the antenna part with two revolution cablings of outside antenna part 13a and inner side antenna part 13b spaced apart diametrically, thereby current value is controlled in the impedance that can adjust them individually.
In addition, the form of the slit 7 of metal window 2, the shape of high frequency antenna 13 are only to illustrate, and can utilize as described later various forms.
Then,, with reference to Fig. 3, the mechanism that induction field is changed to the change width of the slit 7 by making metal window 2 describes.
When in the antenna wire rod 130 at high frequency antenna 13 when current flowing, around it, produce induced field M.The magnetic line of force of induced field M does not see through metal, and the magnetic line of force that therefore arrives metal window 2 forms vortex flow I on the surface of metal window 2
e, due to the reverse magnetic field being formed by it of rear side, the magnetic line of force is bending laterally.Vortex flow I
ethe concentrated vorticity electric current I of synthesizing and form
eCbe formed as flowing to the back side and returning to surperficial ring current from the surface of metal window 2.The concentrated vorticity electric current I of rear side
eCat interior formation the first induction field E of process chamber 4
p1.On the other hand, the magnetic line of force of induced field M sees through slit 7(insulating element 7a), form on the interior surface along substrate G of process chamber 4, by the induced field M in process chamber 4, at interior formation the second induction field E of process chamber 4
p2.And, by these induction fields, process the plasma of gas in the interior generation of process chamber 4.Therefore,, by changing the width of slit, the intensity that sees through the magnetic line of force of the induced field M of slit changes, the second induction field E in process chamber 4
p2size change.,, by changing the width of slit, can adjust the electric field strength for generating plasma.In addition, in Fig. 3, the direction of electric current and the magnetic line of force illustrates for convenience of explanation, is not correct direction.For example, the second induction field E
p2though direction be expressed as the direction identical with the magnetic line of force of induced field M, be actually the direction orthogonal with the magnetic line of force of induced field M.
Then, illustrate and use the inductance coupling plasma processing device forming as described above to implement for example action of processing when plasma etch process of plasma treatment to substrate G.
First, opening under the family of power and influence 27 state, taking out of mouthful 27a and in process chamber 4, move into substrate G by transport mechanism (not shown) from moving into, be placed on after the mounting surface of mounting table 23, utilizing electrostatic chuck (not shown) that substrate G is fixed in mounting table 23.Then, in process chamber 4, the processing gas of supplying with from treating-gas supply system 20 is discharged in process chamber 4 from the gas discharge outlet 8a that doubles as the backbar 6 for spraying framework, and utilize exhaust apparatus 30 via blast pipe 31 to carrying out vacuum exhaust in process chamber 4, make thus to maintain in process chamber for example pressure atmosphere of 0.66～26.6Pa left and right.
In addition, now, for fear of temperature rise or the variations in temperature of substrate G, the cooling space of the rear side via He gas flow path 41 to substrate G is supplied with He gas as heat transmission gas.
Then, from the first high frequency electric source 18, high frequency antenna 13 is for example applied the high frequency of 13.56MHz, thus via metal window 2, at the uniform induction field of the interior generation of process chamber 4.Utilize the induction field generating like this, in process chamber 4, make to process gaseous plasma, the inductively coupled plasma of generating high density.Utilize this plasma, substrate G is carried out to for example plasma etch process as plasma treatment.
Now, as shown in Figure 2, metal window 2 is rectangular shape, therefore different with long limit 2b side width in minor face 2a side.The width of metal window is wider, the size (intensity of the magnetic line of force) in the magnetic field in the plasma span is less, therefore at the width of slit 7 as prior art in basic situation uniformly, exist the electric field strength of the narrower long side of the width of window compared with the short brink of wider width to become tendency large, that plasma intensity uprises.Particularly, for example, at the pars intermedia 202 of metal window 2, the width D of the short brink region 202a corresponding with minor face 2a
wSbe greater than the width D of long side region 202b
wL, therefore the part corresponding with long side region 202b in the plasma span is compared with the part corresponding with short brink region 202a, and it is large that electric field strength becomes, and plasma intensity uprises.
So in the present embodiment, the slit that makes to be formed at metal level 2 is formed as that at least its a part of width is different with position.Particularly, in the slit 7 of metal window 2, be formed as in the outboard slot 71 of rectangular shape the width D of the short brink part 71a parallel with minor face 2a along the Zhou Fangxiang of metal window 2
sSbe greater than the width D of the long side part 71b parallel with long limit 2b
sL.Thus, can improve the intensity of the magnetic line of force of the part corresponding with short brink region 202a, can improve the electric field strength of this part, therefore can make plasma intensity become evenly, can make plasma treatment speed become evenly.
In addition, in inner side slit 72, equally also can make the width of the short brink part parallel with minor face 2a be greater than the width of the long side part parallel with long limit 2b.Thus, can obtain above-mentioned adjustment effect.But the adjustment effect of outboard slot 71 is larger, more easily carries out local control, therefore preferably adjusts slit width in outboard slot 71.Certainly, also can make the width of both short brink parts parallel with minor face 2a of outboard slot 71 and inner side slit 72 all be greater than the width of the long side part parallel with long limit 2b.In addition, above-mentioned outboard slot 71 and inner side slit 72 form abreast with the antenna wire rod 130 of high frequency antenna 13, therefore described above, can exert one's influence selectively to any one of short brink region and long side region, therefore can obtain adjustment effect, but diagonal slits 73 is difficult to short brink region and long side region any one to exert one's influence selectively, therefore almost cannot obtain above-mentioned adjustment effect.
In the present embodiment, in addition, also play effect as described below.
, metal window 2 is split into multiple along its week direction, therefore can be suppressed at concentrated vorticity electric current I mobile in metal window
eCdiffusion, what can make that plasma distributes is controlled good, and can further strengthen the first induction field E
p1.In addition, except on Zhou Fangxiang, also upper divided in the direction (particularly in radiation direction) of intersecting with Zhou Fangxiang, therefore can further increase the first induction field E
p1with the second induction field E
p2.And, high frequency antenna 13 is spaced apart diametrically has outside antenna part 13a and an inner side antenna part 13b, outside antenna part 13a and pars intermedia 202 arrange accordingly, inner side antenna part 13b and inside portion 203 arrange accordingly, and outside can utilizing thus, the electric current of antenna part 13a is suppressed at the interference of the vortex flow that pars intermedia 202 produces and the vortex flow producing in the inside portion 203 corresponding with inner side antenna part 13b.In addition, can adjust the impedance of outside antenna part 13a and inner side antenna part 13b and control individually current value, therefore can control the density distribution of inductively coupled plasma entirety.
In addition, as mentioned above, the partitioning scheme of metal window 2 is not limited to above-mentioned example.For example as shown in Figure 4, the slit 74 of single rectangular shape is only set along Zhou Fangxiang, and makes the width D 1 of the short brink part 74a parallel with minor face 2a of slit 74
sSbe greater than the width D 1 of the long side part 74b parallel with long limit 2b
sL, only thus, also can improve the intensity of the magnetic line of force of the short brink of metal window 2, promote the electric field strength of this part, thereby make plasma treatment speed even.In addition, Segmentation Number on Zhou Fangxiang can be more than four, in at least one in the slit of more than three rectangular shape that they are separated, make the width of the short brink part parallel with minor face 2a be greater than the width of the long side part parallel with long limit 2b.In this case, the adjustment effect maximum of outermost slit, the therefore preferred width of adjusting short brink part and long side part at outermost slit.
In addition, be not limited to cutting apart in the direction of intersecting with the Zhou Fangxiang of metal window 2 above-mentionedly to angular direction, in addition, its Segmentation Number is also not particularly limited.
In addition, high frequency antenna 13 is the antenna part with outside antenna part 13a and two revolution cablings of inner side antenna part 13b spaced apart diametrically, but also can there is independent revolution cabling antenna part, in addition, also can there is the antenna part of three above revolution cablings.By increasing the quantity of antenna part, can further improve density distribution as a whole controlled of inductively coupled plasma.
In addition, as the antenna part of revolution cabling, also can adopt multiple vortex antenna as shown in Figure 5.In the example of Fig. 5, form the antenna part 130 of high frequency antenna 13 form four strip antenna wire rods 131,132,133,134 separately 90 ° of ground staggered positions reels and makes entirety formation Vorticose multiple (quadruple) antenna, the configuring area of antenna is architrave shape roughly.
In addition, as high frequency antenna 13, being not limited to the antenna alignment of revolution cabling is concentric situation, also can alignment arrangements.In addition, be not limited to turn round the antenna of cabling, for example as shown in Figure 6, also antenna wire rod 141 can be wound in the direction of intersecting with metal window 2 to vertical coiling helical form, generate the planar portions 142 of the induction field working towards the plasma of metal window 2 is formed to the Straight Wire Antenna that many (in figure being 3) antenna wire rod 141 configured in parallel are formed.In addition, also can configure the spiral helicine antenna part of multiple this vertical coiling.
The analog result of the impact of the width plasma excitation current generation of slit width and metal window then, is described.
Herein, as shown in Figure 7, use is wound as the high frequency antenna shown in the vertical spiral helicine Fig. 6 of coiling, and use rectangular shaped, form with the slit of the concentric rectangle of its profile and in slit, be filled with the metal window of the insulating element that Teflon (registered trade mark) makes, make the change width of slit width (Teflon width) and metal window, plasma excitation current (intensity of plasma) calculates.In addition, herein, slit width (Teflon width) is the width of the part of the A shown in Fig. 7, and the width of window is the width of the part of the B shown in Fig. 7.
Fig. 8 is the figure that represents the relation of slit width (Teflon width) and plasma exciatiaon electric current.As shown in the drawing, slit width (Teflon width) is not linear with the relation of plasma exciatiaon electric current, but along with the increase of slit width (Teflon width), plasma exciatiaon electric current increases monotonously, is issued to saturated at width to a certain degree.The region that uses this to reach capacity in view of efficiency as the slit width of standard more.This width is different with the thickness of metal window, but as shown in Figure 8, is roughly 20mm.Further widen on this basis, efficiency also less improves.The region that will make degradation in efficiency of the long side of metal window is narrower than the width of plasma exciatiaon current saturation, but in the time too narrowing, efficiency significantly worsens, and is therefore preferably adjusted to the slit width of 5～10mm.
Fig. 9 is the figure that represents the width of metal window and the relation of plasma exciatiaon electric current.As shown in the drawing, the width of metal window is wider, and efficiency is poorer.
Can confirm according to above result, can adjust the inhomogeneous of plasma that the width difference of metal window causes by slit width.
< the second execution mode >
Then, the second execution mode of the present invention is described.
In the first embodiment, according to the difference of the width of metal window, make in advance the width difference of slit, but in the present embodiment, the example of the variable-width to slit describes.
Figure 10 is the sectional view that represents a part for the metal window of the inductance coupling plasma processing device of the second execution mode of the present invention.As shown in the drawing, in the present embodiment, it is identical with the first execution mode that metal window 2 is cut apart this point by slit 7, but, be with the first execution mode difference, at least a portion of slit 7 is provided with the lid that can move 150 of adjusting slit width, makes the variable-width of slit.In addition, in slit 7, be filled with insulating element 7a.The adjustment of the width of slit 7 can be undertaken by using the suitable actuators such as motor, cylinder to make to cover 150 slips.Lid 150 without with partitioning portion 211 and 212 both conductings of the metal window 2 being split to form by slit 7, with wherein one (being partitioning portion 212 in Figure 10) insulation.And lid 150 moves under the state that keeps its state of insulation.The position of the slit of variable-width is not limited, but can enumerate short brink part 71a or the long side part 71b of the outboard slot 71 of for example Fig. 2.
Like this, the mechanism that adjusts its width is set at least a portion of slit 7, can adjusts thus the deviation that the plasma intensity based on each device, each processing scheme distributes.
But, in Figure 10, in the case of a side's of the metal window 2 that is split to form by slit 7 partitioning portion 211 ground connection, sometimes and the opposing party's partitioning portion 212 between there is for example 5～10kV of several kV() potential difference.In this case, in the structure of Figure 10, want to utilize and cover 150 width that make slit 7 hour, cover 150 and partitioning portion 212 between, sometimes produce creeping discharge etc.In the situation that having this possibility, structure is as shown in figure 11 effective.In the example of Figure 11, the mode setting of stretching out with the partitioning portion 212 to the opposing party across distance piece 151 at the upper surface of the partitioning portion 211 of metal window 2 covers 150 and to adjust slit width be effective.Now, from effectively preventing the viewpoint of creeping discharge, gap (, the thickness of the distance piece 151) d of lid 150 and metal window 2
1be preferably 5～10mm left and right.In addition, preferably cover 150 with partitioning portion 212 overlap length d
2it in the situation that making slit width the narrowest, is 20mm left and right.
In the second execution mode, lid 150 movement is not limited to slidingtype, also can adopt rotary type as shown in figure 12 etc., variety of way.
In addition, the present invention is not limited to above-mentioned execution mode, can carry out various distortion.
For example, in the above-described embodiment, exemplified with Etaching device, but be not limited to Etaching device as an example of inductance coupling plasma processing device, also can be applied to other the plasma processing apparatus such as CVD film forming.In addition, exemplified with using the substrate of rectangular shape and the example of metal window, but be not limited to this.
In addition, exemplified with the example that utilizes FPD substrate as processed substrate, but as long as rectangular substrate, also can be applied to solar panel the plasma treatment with other substrates such as substrates.
Claims (14)
1. an inductance coupling plasma processing device of substrate being implemented to inductively coupled plasma processing, this inductance coupling plasma processing device is characterised in that, comprising:
The process chamber of storage substrate;
Generate the high frequency antenna of inductively coupled plasma for the region of the placement substrate in described process chamber; With
Metal window, it is configured between the plasma formation zone and described high frequency antenna that generates described inductively coupled plasma, arranges accordingly with substrate,
Described metal window is divided into multiple regions by slit, described slit at least its part to be formed as width different with position, thus, can adjust the distribution that is formed on the induction field of described process chamber by the electric current that is supplied to described high frequency antenna.
2. inductance coupling plasma processing device as claimed in claim 1, is characterized in that:
Described metal window comprises region that width is relatively wide and the region of width relative narrower, and in described slit, the width of the part corresponding with the region of described width relative narrower is than large with the width of part corresponding to the relatively wide region of described width.
3. inductance coupling plasma processing device as claimed in claim 1 or 2, is characterized in that:
Described metal window comprises the long side region corresponding with the long limit of described metal window and the short brink region corresponding with the minor face of described metal window, described slit comprises first slit corresponding with described short brink region and second slit corresponding with described long side region, and the width of described the first slit is larger than the width of described the second slit.
4. inductance coupling plasma processing device as claimed in claim 3, is characterized in that:
Described the first slit forms parallelly with described minor face, and described the second slit forms parallelly with described long limit.
5. the inductance coupling plasma processing device as described in claim 3 or 4, is characterized in that:
Described slit comprises the concentric rectangular slot of profile with the described metal window of rectangular shaped, the minor face that described the first slit is described rectangular slot, the long limit that described the second slit is described rectangular slot.
6. inductance coupling plasma processing device as claimed in claim 5, is characterized in that:
Described slit is concentric shape and comprises multiple described rectangular slot, and in described rectangular slot, at least outermost rectangular slot comprises described the first slit and described the second slit.
7. the inductance coupling plasma processing device as described in claim 5 or 6, is characterized in that:
Described slit comprises the crossed slot of the direction of intersecting with described rectangular slot.
8. inductance coupling plasma processing device as claimed in claim 7, is characterized in that:
Described crossed slot is the diagonal angle wire of described rectangular slot.
9. the inductance coupling plasma processing device as described in any one in claim 3～8, is characterized in that:
Described the first slit is formed as parallel with the antenna wire rod of high frequency antenna with at least one party in described the second slit.
10. inductance coupling plasma processing device as claimed in claim 9, is characterized in that:
Described high frequency antenna is arranged in the face corresponding with described metal window, described antenna wire rod is at the Zhou Fangxiang of described metal window upper rotary cabling.
Substrate is implemented to the inductance coupling plasma processing device of inductively coupled plasma processing for 11. 1 kinds, this inductance coupling plasma processing device is characterised in that, comprising:
The process chamber of storage substrate;
Generate the high frequency antenna of inductively coupled plasma for the region of the placement substrate in described process chamber; With
Metal window, it is configured between the plasma formation zone and described high frequency antenna that generates described inductively coupled plasma, arranges accordingly with substrate,
Described metal window is divided into multiple regions by slit, and the variable-width of at least a portion of described slit makes it possible to adjust the distribution that is formed on the induction field of described process chamber by the electric current that is supplied to described high frequency antenna.
12. inductance coupling plasma processing devices as claimed in claim 11, is characterized in that:
Described metal window comprises region that width is relatively wide and the region of width relative narrower, the variable-width of at least a portion of described slit, the width that makes part corresponding with the region of described width relative narrower in described slit is than large with the width of part corresponding to the relatively wide region of described width.
13. inductance coupling plasma processing devices as described in claim 11 or 12, is characterized in that:
In described slit, the part of variable-width has the lid that the width of described slit is adjusted.
14. inductance coupling plasma processing devices as claimed in claim 13, is characterized in that:
One side region conducting of described lid and the described metal window that is split to form by the part of variable-width in described slit, with the opposing party's region insulation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-022544 | 2013-02-07 | ||
| JP2013022544A JP2014154684A (en) | 2013-02-07 | 2013-02-07 | Inductively coupled plasma processing apparatus |
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| CN103985624A true CN103985624A (en) | 2014-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410039246.XA Pending CN103985624A (en) | 2013-02-07 | 2014-01-27 | Inductive coupling plasma processing device |
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| Country | Link |
|---|---|
| JP (1) | JP2014154684A (en) |
| KR (1) | KR20140100890A (en) |
| CN (1) | CN103985624A (en) |
| TW (1) | TW201447963A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115522181A (en) * | 2021-06-24 | 2022-12-27 | 东京毅力科创株式会社 | Film forming apparatus and film forming method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6593004B2 (en) * | 2015-07-22 | 2019-10-23 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP7169885B2 (en) * | 2019-01-10 | 2022-11-11 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
| JP7403052B2 (en) | 2020-01-27 | 2023-12-22 | 日新電機株式会社 | Plasma source and plasma processing equipment |
| JP7403348B2 (en) * | 2020-02-21 | 2023-12-22 | 東京エレクトロン株式会社 | Antenna segment and inductively coupled plasma processing equipment |
| JP7403347B2 (en) * | 2020-02-21 | 2023-12-22 | 東京エレクトロン株式会社 | Inductively coupled antenna and plasma processing equipment |
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| JP2000173797A (en) * | 1998-12-01 | 2000-06-23 | Sumitomo Metal Ind Ltd | Microwave plasma treating device |
| JP2004134495A (en) * | 2002-10-09 | 2004-04-30 | Fasl Japan Ltd | Plasma processing apparatus |
| US20100175831A1 (en) * | 2009-01-14 | 2010-07-15 | Tokyo Electron Limited | Inductively coupled plasma processing apparatus |
| CN102362557A (en) * | 2009-03-23 | 2012-02-22 | 东京毅力科创株式会社 | Microwave plasma processing apparatus |
| CN102751157A (en) * | 2011-04-21 | 2012-10-24 | 东京毅力科创株式会社 | Inductively coupled plasma processing apparatus |
-
2013
- 2013-02-07 JP JP2013022544A patent/JP2014154684A/en active Pending
-
2014
- 2014-01-23 KR KR1020140008201A patent/KR20140100890A/en not_active Application Discontinuation
- 2014-01-27 TW TW103102950A patent/TW201447963A/en unknown
- 2014-01-27 CN CN201410039246.XA patent/CN103985624A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000173797A (en) * | 1998-12-01 | 2000-06-23 | Sumitomo Metal Ind Ltd | Microwave plasma treating device |
| JP2004134495A (en) * | 2002-10-09 | 2004-04-30 | Fasl Japan Ltd | Plasma processing apparatus |
| US20100175831A1 (en) * | 2009-01-14 | 2010-07-15 | Tokyo Electron Limited | Inductively coupled plasma processing apparatus |
| JP2011029584A (en) * | 2009-01-14 | 2011-02-10 | Tokyo Electron Ltd | Inductively coupled plasma processing apparatus |
| CN102362557A (en) * | 2009-03-23 | 2012-02-22 | 东京毅力科创株式会社 | Microwave plasma processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115522181A (en) * | 2021-06-24 | 2022-12-27 | 东京毅力科创株式会社 | Film forming apparatus and film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014154684A (en) | 2014-08-25 |
| KR20140100890A (en) | 2014-08-18 |
| TW201447963A (en) | 2014-12-16 |
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Application publication date: 20140813 |