CN102751156B - Inductance coupling plasma processing device - Google Patents
Inductance coupling plasma processing device Download PDFInfo
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- CN102751156B CN102751156B CN201210119171.7A CN201210119171A CN102751156B CN 102751156 B CN102751156 B CN 102751156B CN 201210119171 A CN201210119171 A CN 201210119171A CN 102751156 B CN102751156 B CN 102751156B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Abstract
The invention provides a kind of inductance coupling plasma processing device, even if every for dielectric window portion limit is divided into more than three parts in the maximization tackling processed substrate by this processing unit, thus when having split the more cutting plate of multi-disc than prior art, also can produce strong plasma in process chamber.This device possesses: high frequency antenna (11a) ~ (11c) producing inductively coupled plasma for the plasma generation region in process chamber; Be configured between plasma generation region and described high frequency antenna (11a) ~ (11c), and comprise the dielectric window portion (3) of the conductivity beam (7) of multiple inductive means (3a) ~ (3h) and the plurality of inductive means of supporting (3a) ~ (3h).Every for dielectric window portion limit is divided into more than three parts by conductivity beam (7), and, when every to dielectric window portion (3) limit is divided into more than three parts by conductivity beam (7), the closed loop circuit (200) generated along high frequency antenna (11a), (11b) at the middle body of dielectric window portion (3) can not be formed with in conductivity beam (7).
Description
Technical field
The present invention relates to the inductance coupling plasma processing device substrates such as the glass substrate manufacturing the flat-panel monitors (FPD) such as liquid crystal indicator (LCD) being implemented to plasma treatment.
Background technology
In the manufacturing process of liquid crystal indicator (LCD) etc., in order to implement the process of regulation to glass substrate, and use the various plasma processing apparatus such as plasma etching apparatus, plasma CVD (ChemicalVaporDeposition chemical vapour deposition (CVD)) film formation device.As such plasma processing apparatus, though mostly use capacitance coupling plasma processing unit in the past, but recently, there is inductively coupled plasma (InductivelyCoupledPlasma:ICP) processing unit that can obtain the so large advantage of highdensity plasma and attract attention.
Inductance coupling plasma processing device is the outside configuring high-frequency antenna of the dielectric window by the process chamber at the processed substrate of collecting, supply process gas and to this high frequency antenna supply high frequency electric power in process chamber, thus produce inductively coupled plasma in process chamber, and this inductively coupled plasma is utilized processed substrate to be implemented to the device of the plasma treatment of regulation.As the high frequency antenna of inductance coupling plasma processing device, mostly use the flat plane antenna in plane predetermined pattern.As disclosed example, there is patent documentation 1.
Recently, the size trend of processed substrate maximizes.Such as, if for the rectangle glass of LCD, the length on minor face × long limit from the dimension enlargement of about 1500mm × about 1800mm to about 2200mm × size of about 2400mm, even expand the size of about 2800mm × about 3000mm to, its maximization is particularly remarkable.
Inductance coupling plasma processing device makes dielectric window portion between high frequency antenna and process chamber.If processed substrate maximizes, then dielectric window portion also maximizes.For dielectric window portion, as described in patent document 1, which, general use quartz glass or pottery.
, quartz glass or pottery crisp, be not suitable for maximize.Therefore, such as, as described in patent documentation 2, be divided into four parts etc., be divided into by quartz glass the cutting plate of suitable size to tackle the maximization in dielectric window portion.
Patent documentation 1: Japanese Patent No. 3077009 publication
Patent documentation 2: Japanese Patent No. 3609985 publication
But the maximization of processed substrate is still in remarkable break-throughs.Therefore, if the Segmentation Number further not increasing dielectric window portion just can not form the cutting plate of suitable size.
But, the maximization of the processed substrate of reply, and adopt the linear dividing method as described in patent documentation 2, and be divided into two parts will be divided into more than three parts in the same manner as the method for the entirety quartering equably, by every for dielectric window portion limit and be divided into nine parts equably with the every limit in patent documentation 2, then cause the induction field produced in process chamber to diminish due to reason described later, accompany therewith, this situation that the plasma generated by induction field dies down exists.
Summary of the invention
The invention provides a kind of inductance coupling plasma processing device, this inductance coupling plasma processing device is the maximization of the processed substrate of reply and every for dielectric window portion limit is divided into more than three parts, even if when being divided into more cutting plate than prior art, also strong plasma can be produced in process chamber.
The inductance coupling plasma processing device of a mode of the present invention is the plasma generating area generation inductively coupled plasma in process chamber, carry out plasma treatment to substrate, described device possesses: for producing the high frequency antenna of described inductively coupled plasma in described plasma generating area; Be configured between described plasma generation region and described high frequency antenna, and comprise the dielectric window portion of the conductivity beam of multiple inductive means and the plurality of inductive means of supporting, every limit, described dielectric window portion is divided into more than three parts by described conductivity beam, and, when every limit, described dielectric window portion is divided into more than three parts by described conductivity beam, the closed loop circuit generated along described high frequency antenna at the middle body in described dielectric window portion can not be formed with in described conductivity beam.
According to the present invention, following such inductance coupling plasma processing device can be provided, that is: even if when every for dielectric window portion limit being divided into more than three parts and having split more cutting plate than prior art in the maximization tackling processed substrate, also strong plasma can be there is in process chamber.
Accompanying drawing explanation
Fig. 1 is the cutaway view of the inductance coupling plasma processing device representing an embodiment of the invention briefly.
Fig. 2 (A) figure is the vertical view of the first split example representing the dielectric window portion that the inductance coupling plasma processing device of an execution mode possesses, and (B) figure, (C) figure are the vertical views eliminating high frequency antenna from (A) figure.
Fig. 3 (A) figure is the vertical view of the second split example representing the dielectric window portion that the inductance coupling plasma processing device of an execution mode possesses, and (B) figure, (C) figure are the vertical views eliminating high frequency antenna from (A) figure.
Fig. 4 (A) figure is the vertical view of the 3rd split example representing the dielectric window portion that the inductance coupling plasma processing device of an execution mode possesses, and (B) figure, (C) figure are the vertical views eliminating high frequency antenna from (A) figure.
Fig. 5 (A) figure is the vertical view of the 4th split example representing the dielectric window portion that the inductance coupling plasma processing device of an execution mode possesses, and (B) figure is the vertical view eliminating high frequency antenna from (A) figure.
Fig. 6 is the vertical view of other examples representing high frequency antenna.
Fig. 7 (A) figure is the vertical view in the nine Splittable dielectric window portions every for dielectric window portion limit being divided into three parts, and (B) figure ~ (D) figure is the vertical view eliminating high frequency antenna from (A) figure.
Fig. 8 (A) figure is the vertical view in the 16 Splittable dielectric window portions every for dielectric window portion limit being divided into four parts, and (B) figure is the vertical view eliminating high frequency antenna from (A) figure.
Symbol description:
1... main body container; 3... dielectric window portion; 4... antenna chamber; 5... process chamber; 6... metal support frame; 7... metal supported beam; 11... high frequency antenna; 16... mounting table.
Embodiment
Before the explanation of execution mode, to every for dielectric window portion limit is divided into more than three parts, then the induction field produced in process chamber this situation that can diminish is described.
Fig. 7 A is the vertical view in the nine Splittable dielectric window portions every for dielectric window portion limit being divided into three parts, and Fig. 7 B ~ Fig. 7 D is the vertical view eliminating high frequency antenna from Fig. 7 A.
As shown in Figure 7A and 7B, nine Splittable dielectric window portions 103 be divided into be respectively in length and breadth 3 × 3 totally nine pieces of cutting plate (the multiple inductive means after divided) 103a ~ 103i.Cutting plate 103a ~ 103i is had the conductivity backbar of cancellate plane pattern, such as metal supported beam 107 supports.High frequency antenna 111 has three groups in this example, is inner side high frequency antenna 111a, middle high frequency antenna 111b and outside high frequency antenna 111c respectively.Inner side high frequency antenna 111a is configured at the top of cutting plate 103i, this cutting plate 103i is configured at the top of the central part in dielectric window portion 103, and middle high frequency antenna 111b and outside high frequency antenna 111c is configured at the top of eight cutting plate 103a ~ 103h, and these eight cutting plate 103a ~ 103h are configured at the Outboard Sections in dielectric window portion 103.
; if nine such Splittable dielectric window portions 103; in beams of metal 107 then between inner side high frequency antenna 111a and middle high frequency antenna 111b, create the ring-type closed loop circuit 200 that high frequency antenna 111a and middle high frequency antenna 111b parasitics generate inside these.
If electric current I deasil flows in inner side high frequency antenna 111a and middle high frequency antenna 111b, then electric current I i flows (Fig. 7 C) widdershins in closed loop circuit 200.On the contrary, if electric current I flows widdershins in inner side high frequency antenna 111a and middle high frequency antenna 111b, then electric current I i deasil will flow (Fig. 7 D) in closed loop circuit 200.Be so-called back electromotive force.
If flow in beams of metal 107 based on back electromotive force generation current Ii, then electric current I i can play the effect eliminating the induction field produced in process chamber by inner side high frequency antenna 111a and middle high frequency antenna 111b.Therefore, the induction field produced in process chamber diminishes, and the plasma produced in process chamber dies down.As above situation is solved by following execution mode.
Below, with reference to accompanying drawing, embodiments of the present invention are described.In addition, in the drawings, identical reference marks is marked with for identical part.
Fig. 1 is the cutaway view of the inductance coupling plasma processing device representing an embodiment of the invention briefly.Inductance coupling plasma processing device shown in Fig. 1 can be used in plasma treatment, such as, metal film when forming thin-film transistor on FPD glass substrate, the etching of ITO (IndiumTinOxide tin-doped indium oxide) film, oxide-film etc. or the ashing process etc. of resist film.At this, for example there are liquid crystal display (LCD), electroluminescence (ElectroLuminescence as FPD; EL) display, plasma display panel (PDP) etc.In addition, be not limited to FPD glass substrate, also can use plasma treatment same as described above to solar panel glass substrate.
Plasma processing apparatus possesses the air-tightness main body container 1 of the square tube shape be made up of by the aluminium after having carried out anodized (anodized process) conductive material, such as inner wall surface.Main body container 1 is by earth connection 2 ground connection.Main body container 1 utilizes and main body container 1 insulate and the dielectric window portion 3 formed is divided into antenna chamber 4 and process chamber 5 up and down.In this example, dielectric window portion 3 forms the ceiling wall of process chamber 5.Dielectric window portion 3 uses dielectric substance to form.Dielectric substance is such as quartz glass or pottery.
Between the sidewall 4a and the sidewall 5a of process chamber 5 of antenna chamber 4, be provided with towards dielectric window portion 3 and the bearing support 6 outstanding to the inner side of main body container 1 and backbar 7.Bearing support 6 and backbar 7 are by conductive material, and preferable alloy is formed.Hereinafter referred to as metal support frame 6 and metal supported beam 7.Example as metal is aluminium.In this example, the double spray basket processing gas supply of metal supported beam 7.Metal supported beam 7 when double do spray basket, in the inside of metal supported beam 7, be formed with the gas flow path 8 extended in parallel with the processed surface of processed substrate G.Gas flow path 8 is formed with the multiple gas squit hole 8a discharging process gas in process chamber 5.Process gas supplies to gas flow path 8 from process gas supply mechanism 9 via gas supply pipe 10, and is discharged to the inside of process chamber 5 from gas squit hole 8a.
To be configured with high frequency antenna 11 towards the mode in dielectric window portion 3 in antenna chamber 4 above dielectric window portion 3.High frequency antenna 11 utilizes the spacer 12 and dielectric window portion 3 configured separate that are made up of insulating element.During plasma treatment, the High frequency power that induction field is formed supplies to high frequency antenna 11 from the first high frequency electric source 13 via adaptation 14 and power supply part 15.The frequency of high-frequency electrical is such as 13.56MHz.By to high frequency antenna 11 supply high frequency electric power, thus form induction field in plasma generating area in process chamber 5.The process gas supplied from multiple gas discharge hole 8a utilizes the plasma generation region of this induction field in process chamber 5 by plasma.
In the below of process chamber 5, to be configured with mounting table 16 under the state insulated with main body container 1 by insulating element 17, this mounting table 16 is opposed with high frequency antenna 11 via dielectric window portion 3.Mounting table 16 is made up of by the aluminium carrying out anodized conductive material, such as surface.Processed substrate G, such as LCD glass substrate are placed in mounting table 16.Mounting table 16 is provided with electrostatic chuck (not shown).Processed substrate G is attracted by electrostatic chuck and is held in mounting table 16.Second high frequency electric source 18 is connected with mounting table 16 via adaptation 19 and supply lines 20.In this example, during plasma treatment, supply the High frequency power of bias voltage via adaptation 19 and supply lines 20 to mounting table 16 from the second high frequency electric source 18.The frequency of the High frequency power of bias voltage is such as 3.2MHz.By applying the High frequency power of bias voltage to mounting table 16, the ion in the plasma generated in process chamber 5 is efficiently directed into processed substrate G.In addition, though be not particularly illustrated, in mounting table 16, be provided with heater or the temperature control device be made up of refrigeration circuit etc. and the temperature sensors etc. such as the ceramic heater of the temperature for controlling processed substrate G.
Be provided with the carrying-in/carrying-out mouth 21 of the inside of processed substrate G carrying-in/carrying-out process chamber 5 at the sidewall 5a of process chamber 5.Carrying-in/carrying-out mouth 21 utilizes the family of power and influence 22 to be opened and closed.
The exhaust outlet 23 that the inside of process chamber 5 is exhausted is provided with at the diapire 5b of process chamber 5.The exhaust apparatus 24 comprising vacuum pump etc. is connected with exhaust outlet 23.Utilize exhaust apparatus 24, the inside of process chamber 5 is exhausted, and during plasma treatment, the pressure of process chamber 5 inside is set and maintains the pressure of the vacuum environment (such as, 1.33pa) of regulation.
The control part 25 that inductance coupling plasma processing device is included computer controls.User interface 26 and storage part 27 are connected with control part 25.User interface 26 comprise for supervisor of construction carry out instruction input operation for managing inductance coupling plasma processing device etc. keyboard, by display etc. that is visual for the operational situation of inductance coupling plasma processing device and display.Store in storage part 27: control program, this control program passes through the control realization of control part 25 by various process practiced in inductance coupling plasma processing device; Program (process: processrecipe), this program makes each portion of inductance coupling plasma processing device perform process according to treatment conditions.Process can be stored in hard disk or semiconductor memory, and can be installed on storage part 27 with the state be housed in the storage medium of the mobilitys such as CD-ROM, DVD.Further, process such as can make it suitably transmit via special circuit from other device.Plasma treatment arbitrary process is recalled from storage part 27 according to from the instruction etc. of user interface 26, makes control part 25 perform process according to process, thus carry out under control part 25 controls.
Next, the dielectric window portion that the inductance coupling plasma processing device of an embodiment of the invention possesses is described.
(first split example in dielectric window portion)
Fig. 2 A is the vertical view of the first split example representing the dielectric window portion that the inductance coupling plasma processing device of an embodiment of the invention possesses, and Fig. 2 B, Fig. 2 C are the vertical views eliminating high frequency antenna from Fig. 2 A.
As shown in Figure 2 A and 2 B, the flat shape in the dielectric window portion 3 of the first split example is rectangle.Every limit, dielectric window portion 3 of rectangle is divided into three parts, and the dielectric window portion 3 of rectangle is divided into eight parts of cutting plates (the multiple inductive means after divided) 3a ~ 3h.These segmentation dielectric windows 3a ~ 3h is supported on metal support frame 6 and metal supported beam 7 respectively.
In this example, high frequency antenna 11 possesses the middle high frequency antenna 11b of the inner side high frequency antenna 11a of ring-type and the outside high frequency antenna 11c of ring-type and the ring-type between inner side high frequency antenna 11a and outside high frequency antenna 11c.
The dividing method in the dielectric window portion 3 in the present embodiment is as follows.
With illustrated the same before, if dielectric window portion is merely divided into three parts in every limit, although nine segmenting structures as shown in Figure 7 can be obtained, but in the antenna of present embodiment is formed, the electric current produced based on back electromotive force can flow in closed loop circuit 200, therefore must prevent the electric current of closed loop circuit 200 generation here.So, as shown in Figure 2 C, when every for rectangular-shaped dielectric window portion 3 limit being divided into three parts to prevent from using metal supported beam 7, in such as figure, the middle body in the dielectric window portion 3 that dummy line (two chain-dotted lines) represents produces closed loop circuit 200, in this example, closed loop circuit 200 will be made to produce metal supported beam 7 as shown by arrows in FIG., and the central point to dielectric window portion 3 bends.Thus, in this example, as shown in Figure 2 A, inside it, the middle body of high frequency antenna 11a in dielectric window portion 3 intersects with metal supported beam 7 high frequency antenna 11.By being designed the configuration of metal supported beam 7 like this, thus between inner side high frequency antenna 11a and middle high frequency antenna 11b, the closed loop circuit 200 that will produce along these antenna 11a, 11b is disappeared.The result that closed loop circuit 200 is disappeared is, the electric current produced based on back electromotive force can not flow in metal supported beam 7, can eliminate induction field that produce when being divided into more than three parts on every for dielectric window portion 3 limit, generation in process chamber 5 and to diminish this situation.As shown in Figure 2 C, use if want metal supported beam 7 that every for rectangular-shaped dielectric window portion 3 limit is divided into three parts, then as shown in dummy line in figure, at the middle body in dielectric window portion 3, closed loop circuit 200 in metal supported beam 7, can be produced.In this example, metal supported beam 7 such as the arrow in figure that will produce closed loop circuit 200 represents, the central point to dielectric window portion 3 bends.Thus, in this example as shown in Figure 2 A, inside it, the middle body of high frequency antenna 11a in dielectric window portion 3 intersects with metal supported beam 7 high frequency antenna 11.By being designed the configuration belonging to backbar 7 like this, thus between inner side high frequency antenna 11a and middle high frequency antenna 11b, the closed loop circuit 200 that will produce along these antenna 11a, 11b is disappeared.The result that closed loop circuit 200 is disappeared is, the electric current produced based on back electromotive force can not flow at metal supported beam 7, can remove induction field that produce when being split more than three parts on every for dielectric window portion 3 limit, that produce in process chamber 5 and diminish.
Therefore, even if can obtain, when being divided into more than three parts on every for dielectric window portion 3 limit, also can producing this advantage of strong plasma in process chamber 5 according to the inductance coupling plasma processing device of an execution mode.
In addition, in this example, metal supported beam 7 has the radial position extended radially at the middle body in dielectric window portion 3, and metal supported beam 7 has the flat shape that the middle body in described dielectric window portion 3 intersects.
In addition, radial position is the cornerwise position along dielectric window portion 3.
(second split example in dielectric window portion)
This situation that induction field that produce when every limit, above-mentioned dielectric window portion being divided into three parts, that produce in process chamber 5 diminishes also can produce when every for dielectric window portion limit being split 4 parts.Shown in Fig. 8 A, Fig. 8 B.
Fig. 8 A is the vertical view in the 16 Splittable dielectric window portions every for dielectric window portion limit being divided into four parts, and Fig. 8 B is the vertical view that Fig. 8 A eliminates high frequency antenna.
As shown in Figure 8A and 8B, 16 Splittable dielectric window portions 103 are divided into cutting plate (the multiple inductive means after the divided) 103a ~ 103p of totally 16 pieces of in length and breadth each 4 × 4.These cutting plates 103a ~ 103p is supported by the conductivity backbar such as metal supported beam 107 with cancellate plane pattern.High frequency antenna 111 possesses inner side high frequency antenna 111a, middle high frequency antenna 111b and outside high frequency antenna 111c.Inner side high frequency antenna 111a and middle high frequency antenna 111b is configured at the top of 4 cutting plate 103m ~ 103p, these 4 cutting plate 103m ~ 103p are configured at the middle body in dielectric window portion 103, outside high frequency antenna 111c is configured at the top of 103a ~ 103l in 12 cutting plates, and in these 12 cutting plates, 103a ~ 103l is configured at the Outboard Sections in dielectric window portion 103.
As shown in Figure 8 A, in 16 such Splittable dielectric window portions 103, in beams of metal 107 between middle high frequency antenna 111b and outside high frequency antenna 111c, produce the closed loop circuit 200 of the ring-type that parasitics generates along these middle high frequency antenna 111b and outside high frequency antenna 111c.Electric current that is same with the closed loop circuit 200 in nine Splittable dielectric window portions shown in Fig. 7 A ~ Fig. 7 C, that produce based on back electromotive force flows in closed loop circuit 200.Therefore, the electric current produced due to back electromotive force can play the effect eliminating the induction field produced in process chamber by inner side high frequency antenna 111a and middle high frequency antenna 111b, and the induction field produced in process chamber diminishes, thus the plasma produced in process chamber dies down.
Thus, closed loop circuit 200 can be produced when every for dielectric window portion 103 limit is divided into more than three parts by metal supported beam 107.Conversely speaking, as described in Patent Document 2, every for dielectric window portion 103 limit is split when two parts, because such closed loop circuit can not be produced, so the problem that will solve not as present patent application.
Second split example is when every for dielectric window portion limit is split four parts, makes the example that closed loop circuit 200 disappears.
Fig. 3 A is the vertical view of the second split example representing the dielectric window portion that the inductance coupling plasma processing device of an embodiment of the invention possesses, and Fig. 3 B, Fig. 3 C are the vertical views eliminating high frequency antenna from Fig. 3 A.
As shown in Fig. 3 A and Fig. 3 B, the flat shape in the dielectric window portion 3 of the second split example is the rectangle identical with the first split example.Every limit, dielectric window portion 3 of rectangle is divided into four parts, is divided into cutting plate (the multiple inductive means after the divided) 3a ~ 3l of 12 parts.These segmentation dielectric windows 3a ~ 3l is supported on metal support frame 6 and metal supported beam 7 respectively.
High frequency antenna 11 possesses the middle high frequency antenna 11b of the inner side high frequency antenna 11a of ring-type, the outside high frequency antenna 11c of ring-type and the ring-type between inner side high frequency antenna 11a and outside high frequency antenna 11c.
The dividing method in the dielectric window portion 3 in the present embodiment is as follows.
With illustrated the same before, if dielectric window portion is merely divided into four parts in every limit, although the structure of 16 segmentations as shown in Figure 8 can be obtained, but in the antenna of present embodiment is formed, because the electric current produced based on back electromotive force can flow in closed loop circuit 200, so the electric current of closed loop circuit 200 generation here must be prevented.Therefore, as shown in Figure 3 C, in order to prevent the middle body when using metal supported beam 7 every for dielectric window portion 3 limit to be divided into 4 parts, in dielectric window portion 3 from producing closed loop circuit 200 (representing with dummy line with in figure), and in this example by make closed loop circuit 200 produce metal supported beam 7 same with the first split example, as shown by arrows in FIG. such central point to dielectric window portion 3 bend.Thus, in this example, as shown in Figure 3A, inside it, high frequency antenna 11a, the middle body of middle high frequency antenna 11b in dielectric window portion 3 intersect with metal supported beam 7 high frequency antenna 11.
Even if in the second such split example, designed by the configuration of mode to metal supported beam 7 intersected with inner side high frequency antenna 11a, middle high frequency antenna 11b and metal supported beam 7, thus between middle high frequency antenna 11b and outside high frequency antenna 11c, the closed loop circuit 200 that will produce along these antenna 11b and 11c is disappeared.Even if the result that closed loop circuit 200 disappears also can obtain the advantage identical with the first split example in the second split example.
In addition, in this example, metal supported beam 7 also has the radial position extended radially at the middle body in dielectric window portion 3, and metal supported beam 7 also has the flat shape that the middle body in above-mentioned dielectric window portion 3 intersects.
In addition, radial position is the cornerwise position along dielectric window portion 3.
(the 3rd split example in dielectric window portion)
3rd split example is the example increasing Segmentation Number from the first split example further.
Fig. 4 A is the vertical view of the 3rd split example representing the dielectric window portion that the inductance coupling plasma processing device involved by an embodiment of the invention possesses, and Fig. 4 B, Fig. 4 C are the vertical views eliminating high frequency antenna from Fig. 4 A.
As shown in fig. 4 a and fig. 4b, in the 3rd split example, every for rectangular-shaped dielectric window portion 3 limit is divided into three parts, and in addition, the cutting plate beyond across corner is further split along the circumference in dielectric window portion 3.Consequently, dielectric window portion 3 is divided into 12 parts of cutting plates (the multiple inductive means after divided) 3a ~ 3l.These segmentation dielectric windows 3a ~ 3l is supported on metal support frame 6 and metal supported beam 7 respectively.
The dividing method in the dielectric window portion 3 in the present embodiment is as follows.
As shown in Figure 4 C, if use metal supported beam 7 circumferentially θ dielectric window portion 3 is further split, then can the middle body in dielectric window portion 3, produce closed loop circuit 200 (representing with dummy line with in figure) in metal supported beam 7.In this example, not being the metal supported beam 7 that closed loop circuit 200 will be made to produce bends to the central point in dielectric window portion 3, but configures, the mode that metal supported beam 7 disconnects with the middle body in dielectric window portion 3 to make closed loop circuit 200 disappear.
Like this, in the 3rd split example, the middle body of the metal supported beam 7 produced by making closed loop circuit 200 in dielectric window portion 3 disconnects, thus between middle high frequency antenna 11b and outside high frequency antenna 11c, the closed loop circuit 200 that will produce along these antenna 11b and 11c disappears.The result that closed loop circuit 200 disappears is, even in the 3rd split example, also can obtain the advantage identical with first, second split example.
(the 4th split example in dielectric window portion)
4th split example is when being divided into more than three parts on every for dielectric window portion 3 limit, in order to make whole metal supported beam 7 of the middle body being positioned at dielectric window portion 3 intersect with high frequency antenna 11, and is designed metal supported beam 7.
Fig. 5 A is the vertical view of the 4th split example representing the dielectric window portion that the inductance coupling plasma processing device involved by an embodiment of the invention possesses, and Fig. 5 B is the vertical view eliminating high frequency antenna from Fig. 5 A.
As shown in Fig. 5 A and Fig. 5 B, in the 4th split example, when every for rectangular-shaped dielectric window portion 3 limit being split three parts (such as, by three parts of the segmentation of the top of Fig. 5 B 3a, 3b, 3c), at the middle body in dielectric window portion 3, metal supported beam 7 is configured on the direction that intersects with the inner side high frequency antenna 11a circumferentially forming ring-type, middle high frequency antenna 11b, outside high frequency antenna 11c.In this example, the diagonal in power taking medium window portion 3 is the direction intersected with circumference.Dielectric window portion 3 is first divided into 4 points along 2 diagonal.
And, to dielectric window portion 3 along connection first limit center o1 with and the center o2 of Second Edge that adjoins clockwise of the first limit line, be connected Second Edge center o2 with and adjacent clockwise the 3rd limit of Second Edge center o3 line, is connected the 3rd limit center o3 with and adjacent clockwise the 4th limit, the 3rd limit center o4 line, be connected the 4th limit center o4 and and the line of the center o1 on the first limit that adjoins clockwise of the 4th limit, split further.
According to such segmentation, 12 pieces of cutting plates (the multiple inductive means after divided) 3a ~ 3l that dielectric window portion 3 is divided into.These segmentations dielectric window portion 3a ~ 3l is supported on metal support frame 6 and metal supported beam 7 respectively.
Like this, even if according to the middle body in dielectric window portion 3, the mode that whole limit of metal supported beam 7 is intersected with high frequency antenna 11a, 11b, 11c, is designed the configuration of metal supported beam 7, does not also produce closed loop circuit 200.The result not producing closed loop circuit 200 is, also can obtain the advantage identical with the first to the 3rd split example in the 4th split example.
Above, according to the embodiment of the present invention, following such inductance coupling plasma processing device can be provided, that is: even if when every for dielectric window portion 3 limit is split more than three parts, the such closed loop circuit of back electromotive force is produced, so strong plasma can be produced in process chamber 5 because can not generate.
In addition, the present invention is not defined to an above-mentioned execution mode and can carries out various deformation.In addition, an above-mentioned execution mode is also and not exclusive execution mode in embodiments of the present invention.
Such as, the structure of high frequency antenna 11 is not limited to structure disclosed in above-mentioned execution mode.Such as, circinate high frequency antenna 40 as shown in Figure 6 can also be used.
As shown in Figure 6, circinate high frequency antenna 40 is configured to, wherein heart portion surrounding, apart from the roughly the same radial position in center and on the position of staggering in units of 90 °, there are 4 power supplies 41,42,43,44 be connected with the power supply part 15 shown in Fig. 1, respectively extend two antennas laterally from these power supplies 41,42,43,44.The terminal of each antenna is connected with capacitor 45, and each antenna is via capacitor 45 ground connection.
In so circinate high frequency antenna 40, there is antenna by the position of compact configuration.In this example, there is antenna by the position of compact configuration at inner side and outer side two place.Antenna by the inner side 46a of compact configuration, the inner side high frequency antenna 11a of its corresponding above-mentioned execution mode.In addition, antenna is by the middle high frequency antenna 11b of the corresponding above-mentioned execution mode of the outer fix 46b of compact configuration or outside high frequency antenna 11c.
Wherein, the structure of high frequency antenna 11 does not limit ring-type or swirling.
Moreover, in the above-described embodiment, although illustrate the cineration device as an inductance coupling plasma processing device example, do not limit other plasma treatment appts such as cineration device, etching, CVD film forming and can apply yet.
Moreover, although employ FPD substrate as processed substrate, the present invention is not limited thereto, also can apply the situation that other substrates such as semiconductor wafer process.
Claims (6)
1. an inductance coupling plasma processing device, its plasma generation region in process chamber produces inductively coupled plasma, and carry out plasma treatment to substrate, the feature of described device is,
Possess:
For producing the high frequency antenna of described inductively coupled plasma in described plasma generation region; And
Be configured between described plasma generation region and described high frequency antenna, and comprise the dielectric window portion of the conductivity beam of multiple inductive means and the plurality of inductive means of supporting,
Every limit, described dielectric window portion is divided into more than three parts by described conductivity beam,
Further, when every limit, described dielectric window portion is divided into more than three parts by described conductivity beam, the closed loop circuit that the middle body that can not be formed in described dielectric window portion in described conductivity beam generates along described high frequency antenna,
Described conductivity beam is configured to intersect with described high frequency antenna at the middle body in described dielectric window portion, to make described closed loop circuit disappear.
2. inductance coupling plasma processing device according to claim 1, is characterized in that,
Described conductivity beam has radial position and the described conductivity beam middle body in described dielectric window portion extended radially at the middle body in described dielectric window portion and intersects.
3. inductance coupling plasma processing device according to claim 2, is characterized in that,
Described radial position is along the diagonal in described dielectric window portion.
4., according to the inductance coupling plasma processing device in claims 1 to 3 described in any one, it is characterized in that,
The middle body that described conductivity beam is configured in described dielectric window portion disconnects, to make described closed loop circuit disappear.
5., according to the inductance coupling plasma processing device in claims 1 to 3 described in any one, it is characterized in that,
Whole limit of described conductivity beam intersects with described high frequency antenna at the middle body in described dielectric window portion.
6., according to the inductance coupling plasma processing device in claims 1 to 3 described in any one, it is characterized in that,
Described high frequency antenna at least comprises the first high frequency antenna and is positioned at second high frequency antenna in outside of this first high frequency antenna,
Described closed loop circuit is the circuit forming ring-type between described first high frequency antenna and described second high frequency antenna along described first high frequency antenna and described second high frequency antenna.
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| JP2011095155A JP5638449B2 (en) | 2011-04-21 | 2011-04-21 | Inductively coupled plasma processing equipment |
| JP2011-095155 | 2011-04-21 |
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| KR (2) | KR101406432B1 (en) |
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| KR101775751B1 (en) * | 2012-11-14 | 2017-09-06 | 도쿄엘렉트론가부시키가이샤 | Inductive coupled plasma processing apparatus |
| CN103996595B (en) * | 2013-02-18 | 2017-07-04 | 东京毅力科创株式会社 | Inductance coupling plasma processing device |
| JP6261220B2 (en) * | 2013-02-18 | 2018-01-17 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
| KR102020622B1 (en) * | 2014-09-19 | 2019-09-10 | 주식회사 원익아이피에스 | Inductively coupled plasma processing apparatus |
| KR102458733B1 (en) | 2018-01-09 | 2022-10-27 | 삼성디스플레이 주식회사 | Plasma processing device |
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| US5589737A (en) * | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
| JP2001110777A (en) * | 1999-10-05 | 2001-04-20 | Matsushita Electric Ind Co Ltd | Method and device for processing plasma |
| JP3714924B2 (en) * | 2002-07-11 | 2005-11-09 | 東京エレクトロン株式会社 | Plasma processing equipment |
| KR100719804B1 (en) * | 2005-08-08 | 2007-05-18 | 주식회사 아이피에스 | Multi Magnetized Inductively Coupled Plasmas Structure |
| KR20080099046A (en) * | 2007-05-08 | 2008-11-12 | (주)아이씨디 | Inductively coupled plasma processing apparatus |
| JP4895920B2 (en) * | 2007-06-08 | 2012-03-14 | パナソニック株式会社 | Plasma processing equipment |
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| KR101406432B1 (en) | 2014-06-13 |
| CN102751156A (en) | 2012-10-24 |
| TW201309104A (en) | 2013-02-16 |
| JP5638449B2 (en) | 2014-12-10 |
| TWI657720B (en) | 2019-04-21 |
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| JP2012227428A (en) | 2012-11-15 |
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