TWI770144B - Plasma processing device - Google Patents

Abstract

In the plasma processing apparatus having a plurality of linear antennas, the present invention suppresses the plasma generated between the antennas and improves the uniformity of the plasma. The plasma processing apparatus 100 of the present invention generates plasma P in the vacuum container 2 by flowing a high-frequency current through the plurality of antennas 3 arranged in the vacuum container 2, and uses the plasma P to process the substrate W, In addition, the plurality of antennas 3 are arranged in a linear shape and are arranged in parallel, and between the adjacent antennas 3 , a dielectric member 14 for suppressing the generation of plasma between the antennas is arranged along the antennas 3 .

Description

Plasma processing device

The present invention relates to a plasma processing apparatus which generates plasma in the vacuum vessel by flowing a high-frequency current through an antenna disposed in the vacuum vessel, and processes a substrate using the plasma.

Conventionally, a plasma processing device has been proposed, in which a high-frequency current flows in an antenna, and an inductively coupled plasma (ICP for short) is generated by using an induced electric field generated thereby, and the induction The coupled-type plasma processes the substrate.

Regarding such a plasma processing apparatus, as shown in Patent Document 1, it is thought that a plurality of linear antennas are arranged in a vacuum container in order to cope with a large substrate or the like.

However, in the case of having a plurality of antennas, plasma is generated between the antennas due to the potential difference generated between the antennas. Especially in the case of a linear antenna, the opposing portions of the adjacent antennas become larger, and the region where the plasma is generated becomes larger. The plasma generated between the antennas causes the impedance of each antenna to change, and the uniformity of the plasma, such as the density distribution of the plasma, deteriorates, and even the uniformity of the substrate processing deteriorates. [Prior Art Literature] [Patent Literature]

Patent Document 1: Japanese Patent Laid-Open No. 2016-41837

[Problem to be Solved by the Invention] Therefore, the present invention has been made in order to solve the above-mentioned problems, and the main problem is: in a plasma processing apparatus having a plurality of linear antennas, suppressing interference between adjacent antennas Plasma generation due to the potential difference between them. [means to solve the problem]

That is, the plasma processing apparatus of the present invention generates plasma in the vacuum vessel by flowing a high-frequency current through the plurality of antennas arranged in the vacuum vessel, and processes the substrate using the plasma, and the The plasma processing apparatus is characterized in that the plurality of antennas are arranged in a line shape, respectively, and are arranged in parallel, and between the adjacent antennas, along the antennas, a device for suppressing the generation of plasma between the antennas is arranged. Dielectric member.

According to such a plasma processing apparatus, since a plurality of linear antennas are arranged in parallel, it is possible to preferably cope with an increase in the size of the substrate to be processed. In this configuration, since the dielectric member is provided between the adjacent antennas along the antennas, the generation of plasma due to the potential difference between the adjacent antennas can be suppressed. As a result, the uniformity of the plasma can be improved, and thus the uniformity of the substrate processing can be improved.

Preferably, each of the antennas has a power supply end to which a high frequency is supplied, and a ground end that is grounded, and the plurality of antennas are preferably the power supply end of one of the antennas that are adjacent to each other. It is arranged so as to be adjacent to the ground end of the other antenna. With this configuration, the plasma density distribution in the longitudinal direction of one antenna overlaps the longitudinal plasma density distribution of the other antenna, and the longitudinal plasma density distributions of the two antennas are made uniform.

Here, since a phase difference occurs between the high frequencies supplied to the two antennas adjacent to each other, a potential difference is generated between the two antennas to form an electric field. As a result, plasma is easily generated. In this antenna configuration, by arranging the dielectric member between the two antennas, the effect of suppressing the generation of plasma by the dielectric member can be more remarkable.

When the plurality of antennas are formed through and supported by a pair of opposite side walls of the vacuum container, the dielectric member is preferably formed to span from one of the pair of side walls to The other is a flat plate. With this configuration, generation of plasma can be suppressed between the adjacent antennas as a whole, and the configuration of the dielectric member can be simplified.

In addition, when the plurality of antennas are configured to penetrate through a pair of opposing side walls of the vacuum container and are supported, plasma is generated by an electric field formed between the pair of side walls and the antennas. In this way, the plasma density at both ends of the antenna increases, and the plasma density becomes non-uniform. Therefore, when the dimension of the dielectric member perpendicular to the parallel direction of the antenna is defined as the height dimension, it is preferable that the height dimension of both ends in the longitudinal direction of the dielectric member is larger than the longitudinal dimension of the dielectric member. The height dimension of the central part. With this configuration, the electric field generated between the pair of side walls and the antenna can be preferably suppressed, and the generation of plasma caused by the electric field is suppressed, or the generated plasma is difficult to maintain. As a result, the plasma density at both ends of the antenna in the vacuum container can be reduced, and the unevenness of the plasma density can be reduced. In addition, since the generation of plasma by the electric field is suppressed, the thermal load on the pair of side walls is reduced, and the pair of side walls is stabilized.

The density of the plasma generated by the antenna tends to increase in the center portion in the longitudinal direction of the antenna. Therefore, with regard to the processing of the substrate, the amount of processing at the center portion is also larger than that at the end portion, resulting in uneven substrate processing. In order to solve this problem preferably, when the dimension of the dielectric member perpendicular to the parallel direction of the antenna is set as the height dimension, the height dimension of the center portion in the longitudinal direction of the dielectric member is preferably set as the height dimension. It is larger than the height dimension of both ends in the longitudinal direction. With this configuration, the generation of plasma in the central portion in the longitudinal direction of the antenna can be suppressed, the uniformity of plasma in the longitudinal direction of the antenna can be improved, and the uniformity of substrate processing can be improved.

In addition, when a plurality of antennas are arranged in parallel, the density of the plasma generated by the antennas tends to increase in the central portion in the parallel direction. Therefore, with regard to the processing of the substrate, the amount of processing at the center portion is also larger than that at the end portion, resulting in uneven substrate processing. In order to better solve this problem, when the dielectric member is arranged between the plurality of antennas, it is preferable to align the parallel direction of the dielectric member with the antenna. When the dimension of the intersection is set as the height dimension, the height dimension of the dielectric member arranged between the antennas at the center in the parallel direction is larger than the height dimension of the dielectric member arranged between the antennas outside the parallel direction. With this configuration, the generation of plasma in the center portion of the parallel direction of the plurality of antennas can be suppressed, the uniformity of the plasma in the parallel direction can be improved, and the uniformity of the substrate processing can be improved.

When the antenna is linear, the larger the dimension in the longitudinal direction, the larger the amount of deflection due to its own weight. As a result, the lower end of the antenna may be located at a lower side than the lower end of the dielectric member, and the distance between the central portion of the antenna and the substrate may be close to each other. As a result, there is a possibility that the capacitive coupling component and the plasma density will become non-uniform in the long-side direction of the antenna, and the substrate processing may become non-uniform. In order to better solve this problem, the dielectric member preferably has a support portion for supporting the antenna.

An electric field is formed between an outermost antenna among the plurality of antennas and a side wall adjacent to the outermost antenna. Plasma is generated by this electric field, and the plasma density becomes non-uniform. In order to better solve this problem, it is desirable to provide a second medium for suppressing the generation of plasma between these parts between the outermost antenna of the plurality of antennas and the side wall adjacent to the outermost antenna. electrical components.

An electric field is also formed between the plurality of antennas and the side wall along the parallel direction of the plurality of antennas and opposite to the substrate. Plasma is also generated by this electric field, and the plasma density becomes non-uniform. In order to better solve this problem, it is desirable to provide between the plurality of antennas and the side wall along the parallel direction of the plurality of antennas and on the opposite side to the substrate, to prevent the space between these parts. Plasma-generated third dielectric member. In this configuration, in order to commonize the support structure of the dielectric member between the antennas and the third support structure and reduce the number of parts, the dielectric member between the antennas is preferably connected to the third dielectric member. an electrical member, or integrally formed with the third dielectric member. [Effect of invention]

According to the present invention thus constituted, since the dielectric member is provided between the adjacent antennas, the generation of plasma due to the potential difference between the adjacent antennas can be suppressed.

Hereinafter, an embodiment of the plasma processing apparatus of the present invention will be described with reference to the drawings.

<Apparatus Configuration> The plasma processing apparatus 100 of the present embodiment processes the substrate W using the inductively coupled plasma P. Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence (EL) display, a flexible substrate for a flexible display, or the like. In addition, the treatment performed on the substrate W is, for example, film formation by a plasma chemical vapor deposition (CVD) method, etching, ashing, sputtering, and the like.

In addition, the plasma processing apparatus 100 is also called a plasma CVD apparatus when the film is formed by the plasma CVD method, and is also called a plasma etching apparatus when etching is performed. In this case, it is also referred to as a plasma ashing apparatus, and in the case of sputtering, it is also referred to as a plasma sputtering apparatus.

Specifically, as shown in FIGS. 1 to 3 , the plasma processing apparatus 100 includes: a vacuum vessel 2 that is evacuated and evacuated and into which a gas 7 is introduced; a linear antenna 3 that is disposed in the vacuum vessel 2 ; and a high-frequency The power supply 4 applies a high frequency to the antenna 3 for generating the inductively coupled plasma P in the vacuum vessel 2 . Furthermore, by applying a high frequency to the antenna 3 from the high frequency power supply 4, a high frequency current IR flows in the antenna 3, an induced electric field is generated in the vacuum vessel 2, and an inductively coupled plasma P is generated.

The vacuum container 2 is, for example, a metal container, and the inside thereof is evacuated by the vacuum exhaust device 6 . In this example, the vacuum container 2 is electrically grounded.

The gas 7 is introduced into the vacuum container 2 through, for example, a flow rate regulator (not shown) and a plurality of gas introduction ports 21 arranged in the direction along the antenna 3 . The gas 7 only needs to be a gas corresponding to the content of the processing performed on the substrate W. For example, when a film is formed on the substrate W by the plasma CVD method, the gas 7 is a source gas or a gas obtained by diluting the source gas with a dilution gas (eg, H ₂ ). To give further specific examples, when the source gas is SiH ₄ , a Si film can be formed on the substrate W, when the source gas is SiH ₄ +NH ₃ , a SiN film can be formed on the substrate W, and when the source gas is SiH In the case of ₄ +O ₂ , a SiO ₂ film can be formed on the substrate W, and when the source gas is SiF ₄ +N ₂ , a SiN:F film (silicon fluoride nitride film) can be formed on the substrate W.

In addition, a substrate holder 8 for holding the substrate W is provided in the vacuum chamber 2 . A bias voltage may also be applied to the substrate holder 8 from the bias power supply 9 as in the present example. The bias voltage is, for example, a negative DC voltage, a negative bias voltage, etc., but is not limited thereto. Such a bias voltage can control, for example, the energy when positive ions in the plasma P are incident on the substrate W, thereby controlling the crystallinity of the film formed on the surface of the substrate W, and the like. A heater 81 for heating the substrate W may also be provided in the substrate holder 8 .

The antenna 3 is arranged above the substrate W in the vacuum vessel 2 along the surface of the substrate W (for example, substantially parallel to the surface of the substrate W). In the present embodiment, a plurality of linear antennas 3 are arranged in parallel along the substrate W (for example, substantially parallel to the surface of the substrate W). If it is set in this way, since the plasma P with favorable uniformity can be generated in a wider range, it can cope with the processing of the larger-sized board|substrate W. 2 and 3 show an example in which there are four antennas 3, but the present invention is not limited thereto.

As shown in FIGS. 1 and 3 , the vicinity of both end portions of the antenna 3 penetrates through the pair of opposite side walls 2 a and 2 b of the vacuum vessel 2 , respectively. Insulating members 11 are respectively provided at portions where both end portions of the antenna 3 penetrate to the outside of the vacuum vessel 2 . Both ends of the antenna 3 penetrate through the insulating members 11 , and the penetration parts are vacuum-sealed by, for example, spacers 12 . Via the insulating member 11 , the antenna 3 is supported in a state of being electrically insulated from the opposing side walls 2 a and 2 b of the vacuum vessel 2 . The space between each insulating member 11 and the vacuum container 2 is also vacuum-sealed by, for example, a gasket 13 . Furthermore, the material of the insulating member 11 is, for example, ceramics such as alumina, quartz, or engineering plastics such as polyphenylene sulfide (PPS) and polyetheretherketone (PEEK).

In addition, the material of each antenna 3 is, for example, copper, aluminum, alloys of these metals, stainless steel, etc., but not limited thereto. In addition, the antenna 3 may be cooled by making the antenna 3 hollow and flowing a refrigerant such as cooling water therein.

Furthermore, the portion of the antenna 3 located in the vacuum container 2 is covered by a straight tubular insulating cover 10 . Both ends of the insulating cover 10 are supported by insulating members 11 . Furthermore, the two ends of the insulating cover 10 and the insulating member 11 may not be sealed. The reason for this is that even if the gas 7 enters the space in the insulating cover 10, the space is small and the migration distance of electrons is short, so that the plasma P is usually not generated in the space. Furthermore, the material of the insulating cover 10 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon, or the like.

By providing the insulating cover 10, the charged particles in the plasma P can be suppressed from entering the metal tube constituting the antenna 3, so that the rise of the plasma potential caused by the charged particles (mainly electrons) entering the metal tube can be suppressed, and The metal tube can be prevented from being sputtered by charged particles (mainly ions) to cause metal contamination to the plasma P and the substrate W.

As shown in FIG. 3 , each antenna 3 has, in the antenna direction (longitudinal direction X), a feeding end portion 3 a to which high frequencies are supplied, and a grounding end portion 3 b that is grounded. Specifically, among both ends in the longitudinal direction X of each antenna 3, a portion protruding to the outside from one side wall 2a or 2b becomes a feeding end portion 3a, and a portion protruding to the outside from the other side wall 2a or 2b becomes a Ground terminal 3b.

Here, the high frequency is applied from the high frequency power supply 4 to the feeding end portion 3 a of each antenna 3 via the integrator 41 . The frequency of the high frequency is, for example, normal 13.56 MHz, but is not limited to this.

And, as shown in FIG. 3, it is comprised so that the feed end part 3a of one antenna 3 and the ground end part 3b of the other antenna 3 of the two adjacent antennas 3 may adjoin each other. That is, when the direction in which the antennas 3 are arranged is the parallel direction Y, among the plurality of antennas 3, in the parallel direction Y of the antennas 3, the ground end portion 3b, the feed end portion 3a, the ground end portion 3b, The form of the power supply terminal 3a is alternately connected.

Specifically, a plurality of (specifically, two) feeding end portions 3a located at one end side in the longitudinal direction X of the plurality of antennas 3 are connected to one first integrator 41 ( 41a ) via one first integrator 41 ( 41 a ). High frequency power supply 4 (4a). In addition, a plurality of (specifically, two) power feeding end portions 3 a located on the other end side in the longitudinal direction X of the plurality of antennas 3 are connected to one second integrator 41 ( 41 b ) via one second integrator 41 ( 41 b ). High frequency power supply 4 (4b).

Here, it is configured so that the phase difference of the high frequency applied to each of the two adjacent antennas 3 becomes 0°. That is, the first high-frequency power supply 4 ( 4 a ) and the second high-frequency power supply 4 ( 4 b ) are controlled by the phase controller 40 so that the phase difference between these high-frequency power supplies becomes 0°.

At this time, since the feeding ends 3 a of the two adjacent antennas 3 are located on opposite sides of each other in the longitudinal direction X, the high-frequency currents flowing through the antennas 3 are reversed. When the effective phase difference of the high-frequency currents flowing in the two adjacent antennas 3 is 180°, the high-frequency magnetic fields generated around the two adjacent antennas 3 are reversed. The antennas 3 reinforce each other. As a result, the intensity of the induced electric field generated around the plurality of antennas 3 is increased, the decomposition efficiency of the gas 7 is improved, and the high-density inductively coupled plasma P can be stably generated. In this case, although the potential difference between the two adjacent antennas 3 is increased, the dielectric member 14 can suppress the plasma caused by the discharge between the antennas 3, thereby improving the uniformity.

Furthermore, in this embodiment, as shown in FIGS. 2 and 3 in particular, a dielectric member 14 for suppressing the generation of plasma between the plurality of antennas 3 is provided between two antennas 3 that are adjacent to each other. . The dielectric member 14 of the present embodiment is provided between each of the plurality of antennas 3 .

The dielectric member 14 has a flat plate shape provided along the antenna 3 . Specifically, the dielectric member 14 is arranged along the antenna 3 in parallel with the antenna 3 , and is provided, for example, from one side wall 2 a to the other side wall 2 b. One end portion of the dielectric member 14 in the longitudinal direction X is supported by one side wall 2a by a support portion (not shown), and the other end portion in the longitudinal direction X is supported by the other side wall by a support portion (not shown). 2b.

In this embodiment, since the insulating cover 10 is provided on the outer periphery of the antenna 3 , the dielectric member 14 is provided away from the insulating cover 10 . Moreover, the dielectric member 14 is provided in the intermediate position of the antenna 3 (insulation cover 10) adjacent to each other. That is, the distance between one side surface of the dielectric member 14 and the antenna 3 (insulating cover 10 ) facing the side surface is the same as the distance from the other side surface of the dielectric member 14 and the antenna 3 (insulating cover 10 ) facing the side surface. .

Further, the dielectric member 14 has a rectangular shape when viewed from the side, and has a height dimension that can suppress the generation of plasma between the antennas 3 , for example, the outer diameter of the antenna 3 or the insulating cover 10 or more. As shown in FIG. 2 and the like, the cross-sectional shape of the dielectric member 14 is, for example, a rectangular shape elongated in a direction (up-down direction) orthogonal to the parallel direction Y of the antennas 3 , but is not limited thereto. In the present embodiment, the upper end of the dielectric member 14 is positioned above the upper end of the insulating cover 10 , and the lower end of the dielectric member 14 is positioned lower than the lower end of the insulating cover 10 .

Furthermore, the dielectric member 14 is entirely composed of a dielectric substance. The material of the dielectric member 14 is ceramics such as alumina, silicon carbide, and silicon nitride, quartz glass, alkali-free glass, other inorganic materials, or silicon.

<Effects of the present embodiment> According to the plasma processing apparatus 100 of the present embodiment configured as described above, since the plurality of linear antennas 3 are arranged in parallel, it is possible to favorably cope with an increase in the size of the substrate W to be processed. In this configuration, since the dielectric member 14 is provided between the antennas 3 adjacent to each other along the antennas 3 , the generation of plasma due to the potential difference between the adjacent antennas 3 can be suppressed. As a result, the uniformity of the plasma P can be improved, so that the uniformity of the substrate processing can be improved.

In addition, among the plurality of antennas 3, among the two adjacent antennas 3, the power supply end 3a of one antenna 3 is connected to the ground end 3b of the other antenna 3 so that the ground end 3b of the other antenna 3 is adjacent to each other, so the length of one antenna 3 is The plasma density distribution in the direction coincides with the plasma density distribution in the longitudinal direction of the other antenna 3 , so that the plasma density distribution in the longitudinal direction of the two antennas 3 becomes uniform. Here, since a potential difference is generated between the two adjacent antennas 3, an electric field is formed and plasma is easily generated. However, since the dielectric member 14 is arranged between these antennas, the plasma of the dielectric member 14 can be generated. The inhibitory effect is more pronounced.

<Other modified embodiment> In addition, this invention is not limited to the said embodiment.

For example, the dielectric member 14 of the above-described embodiment has a rectangular shape in a side view, but is not limited to this, and may have the following shapes. For example, as shown in FIG. 4 , the dielectric member 14 may have a structure in which the height dimension of both end portions in the longitudinal direction X is larger than the height dimension of the central portion. As shown in FIG. 4 , the height dimension of the dielectric member 14 may be configured to increase continuously as it goes to the outside, in addition to the structure that increases stepwise toward the outside as shown in FIG. 4 . According to this configuration, both ends of the dielectric member 14 in the longitudinal direction X serve as suppressing portions for suppressing the generation of plasma between the side walls 2a, 2b and the antenna 3, and the plasma density due to the generation of plasma can be reduced of unevenness. In addition, since the generation of the plasma P is suppressed, the thermal load on the pair of side walls 2a, 2b is reduced, and the pair of side walls 2a, 2b is stabilized. Furthermore, it is easy to improve the utilization efficiency of high-frequency power and the plasma generation efficiency.

On the other hand, as shown in FIG. 5, the height dimension of the center part of the longitudinal direction X of the dielectric member 14 may be set as the structure larger than the height dimension of both ends. In this case, as shown in FIG. 5, the height dimension of the dielectric member 14 may increase stepwise as it goes to the center, in addition to the structure that increases continuously toward the center. With this configuration, even when plasma generation is promoted in the central portion in the longitudinal direction X of the antenna 3 due to the in-plane distribution of the gas, the electric current in the central portion in the longitudinal direction X of the antenna 3 can be suppressed. The plasma generation can improve the uniformity of the plasma P in the longitudinal direction of the antenna 3, thereby improving the uniformity of the substrate processing.

In addition, in the said embodiment, although the dielectric member 14 arrange|positioned between the several antennas 3 has the same shape, it is good also as a mutually different shape. For example, as shown in FIG. 6, among the plurality of dielectric members 14 provided between the plurality of antennas 3, the height dimension of the dielectric member 14 arranged between the antennas 3 in the center of the parallel direction Y may be adopted. It is larger than the height dimension of the dielectric member 14 arranged between the antennas 3 on the outer side in the parallel direction Y. FIG. 6 shows a configuration in which the height dimension of the dielectric member 14 increases piece by piece as it goes from the outside to the inside. In addition, the height dimension of the dielectric member 14 may increase in units of a plurality of pieces as it goes from the outside to the inside. With this configuration, generation of plasma in the center portion of the array direction Y of the plurality of antennas 3 can be suppressed, the uniformity of the plasma P in the array direction Y can be improved, and the uniformity of substrate processing can be improved.

Furthermore, in order to better control the plasma generation between the outermost antenna 3x among the plurality of antennas 3 and the side walls 2c and 2d adjacent to the outermost antenna 3x, as shown in FIG. Between the antenna 3x and the side wall 2c and the side wall 2d, a second dielectric member 15 for suppressing the generation of plasma between these parts is provided. The second dielectric member 15 can be assumed to have the same configuration as the dielectric member 14 of the above-described embodiment, but it is not limited to this, and various configurations are possible. With this configuration, generation of plasma between the outermost antenna 3x and the side walls 2c and 2d can be suppressed. As a result, the uniformity of the plasma P can be improved, so that the uniformity of the substrate processing can be improved. In addition, since the generation of the plasma P is suppressed, the thermal load on the side walls 2c and 2d is reduced, and the side walls 2c and 2d are stabilized. Furthermore, it is easy to improve the utilization efficiency of high-frequency power and the plasma generation efficiency.

In addition, in order to better suppress the generation of plasma between the plurality of antennas 3 and the side wall (upper side wall) 2e on the opposite side to the substrate W along the parallel direction Y of the plurality of antennas 3, as shown in FIG. 8 , a third dielectric member 16 is disposed between the plurality of antennas 3 and the upper side wall 2e for suppressing the generation of plasma between these parts. The third dielectric member 16 has a flat plate shape, and its material is, for example, the same as that of the dielectric member 14 . In addition, FIG. 8 shows a case where the plurality of dielectric members 14 are connected to the third dielectric member 16 in an erected state or formed integrally with the third dielectric member 16 . With this configuration, generation of plasma between the outermost antenna 3 and the upper side wall 2e can be suppressed. As a result, the uniformity of the plasma P can be improved, so that the uniformity of the substrate processing can be improved. In addition, since the generation of the plasma P is suppressed, the thermal load on the upper side wall 2e is reduced, and the upper side wall 2e is stabilized. Furthermore, it is easy to improve the utilization efficiency of high-frequency power and the plasma generation efficiency.

In addition to the configuration in which one piece of the dielectric member 14 (or the second dielectric member 15 and the third dielectric member 16 ) is arranged along the longitudinal direction X of the antenna 3 , the A configuration in which a plurality of dielectric members 14 (or the second dielectric members 15 and the third dielectric members 16 ) are arranged.

In the above-described embodiment, the configuration in which one dielectric member 14 is provided between the antennas 3 is exemplified, but a plurality of dielectric members 14 may be arranged between the antennas 3 so as to be parallel to each other, for example. In this case, the interval between the plurality of dielectric members 14 is set to such an extent that no plasma P is generated between the dielectric members. In addition, the plurality of dielectric members 14 provided between the respective antennas 3 do not need to have the same shape, and may have mutually different shapes.

As shown in FIGS. 9( a ) and 9 ( b ) and FIGS. 10 ( a ) and 10 ( b ), the dielectric member 14 may be provided with a support portion 17 for supporting the antenna 3 . Furthermore, in the case of the configuration in which the insulating cover 10 is provided on the outer periphery of the antenna 3 , the support portion 17 supports the insulating cover 10 . Hereinafter, the configuration including the insulating cover 10 will be described.

Specifically, as shown in FIG. 9( a ) and FIG. 9( b ), the support portion 17 supports insulation at one point ( FIG. 9( a )) or multiple points ( FIG. 9( b )) at the center portion of the antenna 3 . hood 10. The support portion 17 is configured to support the plurality of insulating covers 10 , and is provided along the parallel direction Y of the plurality of antennas 3 . The support portion 17 may be composed of one member common to the plurality of dielectric members 14, or may be composed of a plurality of members. 9( a ) and FIG. 9( b ) show the configuration in which the support portion 17 is installed up to the second dielectric member 15 , but the present invention is not limited thereto. The cross-sectional shape of the support portion 17 may be, for example, a rectangular shape, a circular shape, or may be set to other various shapes. Furthermore, from the viewpoint of preventing deflection due to the own weight of the support portion 17, the cross-sectional shape of the support portion 17 is preferably a rectangular shape elongated in the direction of gravity. The material of the support portion 17 is, for example, the same as that of the dielectric member 14 .

In addition, as shown in FIG. 10( a ), when the lower end of the dielectric member 14 and the lower end of the insulating cover 10 have the same height, the support portion 17 is connected to the lower end of the dielectric member 14 , and the support portion 17 is The upper end is in contact with the lower end of the insulating cover 10 . As shown in FIG. 10( b ), when the lower end of the dielectric member 14 is positioned below the lower end of the insulating cover 10 , the support portion 17 is connected to the dielectric member 14 so as to penetrate through the dielectric member 14 , for example. The upper end of the support portion 17 is in contact with the lower end of the insulating cover 10 .

By providing the support portion 17 on the dielectric member 14 in this way, the positional relationship between the antenna 3 (the insulating cover 10 ) and the dielectric member 14 can be maintained in the longitudinal direction X of the antenna 3 , and the longitudinal direction of the antenna 3 can be maintained. Reduce the inhomogeneity of capacitive coupling component or plasma density on X. As a result, more uniform substrate processing can be achieved.

In addition, in the above-described embodiment, the antenna 3 has a linear shape, but may have a curved or curved shape.

In the above-described embodiment, the insulating cover 10 is provided on the outer periphery of the antenna 3, but the insulating cover 10 may not be provided. In this case, the structure of the dielectric member 14 is also the same as that of the above-described embodiment.

In addition, this invention is not limited to the said embodiment, It cannot be overemphasized that various deformation|transformation are possible in the range which does not deviate from the summary.

2‧‧‧Vacuum container 2a, 2b, 2c, 2d‧‧‧Sidewall 2e‧‧‧Sidewall (upper sidewall) 3, 3x‧‧‧Antenna 3a‧‧‧Power supply end 3b‧‧‧Grounding end 4‧‧ ‧High-frequency power supply 4a‧‧‧First high-frequency power supply 4b‧‧‧Second high-frequency power supply 6‧‧‧Vacuum exhaust device 7‧‧‧Gas 8‧‧‧Substrate holder 9‧‧‧bias power supply 10 ‧‧‧Insulating Cover 11‧‧‧Insulating Member 12, 13‧‧‧Pad 14‧‧‧Dielectric Member (First Dielectric Member) 15‧‧‧Second Dielectric Member 16‧‧‧Third Dielectric Member Member 17‧‧‧Support part 21‧‧‧Gas inlet 40‧‧‧Phase controller 41‧‧‧Integrator 41a‧‧‧First integrator 41b‧‧‧Second integrator 81‧‧‧Heater 100 ‧‧‧Plasma processing device IR‧‧‧High-frequency current P‧‧‧Plasma W‧‧‧Substrate X‧‧‧long-side direction Y‧‧‧parallel direction

FIG. 1 is a longitudinal cross-sectional view along the longitudinal direction of the antenna, schematically showing the configuration of the plasma processing apparatus according to the present embodiment. FIG. 2 is a longitudinal cross-sectional view orthogonal to the longitudinal direction of the antenna, schematically showing the configuration of the plasma processing apparatus according to the present embodiment. FIG. 3 is a transverse cross-sectional view along the direction in which the antennas are arranged, schematically showing the configuration of the plasma processing apparatus according to the present embodiment. FIG. 4 is a schematic diagram showing a modification of the dielectric member. FIG. 5 is a schematic diagram showing a modification of the dielectric member. FIG. 6 is a schematic diagram showing a modification of the dielectric member. 7 is a longitudinal cross-sectional view orthogonal to the longitudinal direction of the antenna, schematically showing the configuration of the plasma processing apparatus according to the modified embodiment. 8 is a longitudinal cross-sectional view orthogonal to the longitudinal direction of the antenna, schematically showing the configuration of the plasma processing apparatus according to the modified embodiment. FIGS. 9( a ) and 9 ( b ) are schematic views showing a dielectric member and a support portion according to a modified embodiment. FIGS. 10( a ) and 10 ( b ) are schematic diagrams showing a dielectric member and a support portion according to a modified embodiment.

2‧‧‧Vacuum container

2a, 2b‧‧‧Sidewall

3‧‧‧Antenna

3a‧‧‧Power supply terminal

3b‧‧‧ground terminal

4‧‧‧High frequency power supply

6‧‧‧Vacuum exhaust device

7‧‧‧Gas

8‧‧‧Substrate holder

9‧‧‧Bias power supply

10‧‧‧Insulation cover

11‧‧‧Insulation components

12, 13‧‧‧Padding

14‧‧‧Dielectric member (first dielectric member)

21‧‧‧Gas inlet

41‧‧‧Integrator

81‧‧‧Heater

100‧‧‧Plasma Processing Equipment

IR‧‧‧High Frequency Current

P‧‧‧plasma

W‧‧‧Substrate

X‧‧‧long side direction

Claims (11)

A plasma processing apparatus generates plasma in a vacuum container by flowing a high-frequency current in a plurality of antennas arranged in a vacuum container, and uses the plasma to process a substrate, and the plurality of The antennas are arranged in a straight line and arranged in parallel, the plurality of antennas are covered by a straight tubular insulating cover, and a dielectric member for suppressing the generation of plasma between the antennas is arranged between the insulating covers adjacent to each other. , the dielectric member is disposed away from the insulating cover and along the antenna. The plasma processing apparatus according to claim 1, wherein each of the antennas has a power supply end to which a high frequency is supplied, and a ground end that is grounded, and the plurality of antennas are adjacent to each other. Among the antennas, the power feeding end of one of the antennas is arranged so as to be adjacent to the ground end of the other antenna. The plasma processing apparatus of claim 1 or 2, wherein the plurality of antennas penetrate and are supported by a pair of opposing side walls of the vacuum vessel, and the dielectric member is formed from the A pair of side walls are provided in a flat plate shape spanning from one to the other. The plasma processing apparatus according to claim 3, wherein when the dimension of the dielectric member perpendicular to the parallel direction of the antenna is the height dimension, the longitudinal direction of the dielectric member The height dimension of both ends is larger than the height dimension of the center part in the longitudinal direction. The plasma processing apparatus according to claim 3, wherein when the dimension of the dielectric member perpendicular to the parallel direction of the antenna is the height dimension, the longitudinal direction of the dielectric member The height dimension of the center part is larger than the height dimension of the both ends in the longitudinal direction. The plasma processing apparatus according to claim 3, wherein the dielectric member is provided between each of the plurality of antennas, so that the parallel direction of the dielectric member and the antenna is orthogonal to When the dimension of is the height dimension, the height dimension of the dielectric member arranged between the antennas at the center of the parallel direction is larger than the height dimension of the dielectric member arranged between the antennas outside the parallel direction. The plasma processing apparatus according to claim 1 or claim 2, wherein the dielectric member has a support portion that supports the antenna. The plasma processing apparatus according to claim 1 or claim 2, wherein between the outermost antenna among the plurality of antennas and a side wall adjacent to the outermost antenna, there is provided for suppressing the A plasma-generated second dielectric member between the parts. The plasma processing apparatus according to claim 1 or claim 2, wherein between the plurality of antennas and a side wall along the parallel direction of the plurality of antennas and opposite to the substrate, A third dielectric member for suppressing plasma generation between the plurality of antennas and the side walls is provided, and the dielectric member between the antennas is connected to the third dielectric member, or is connected to the third dielectric member. The dielectric member is integrally formed. A plasma processing device, by means of a plurality of wires arranged in a vacuum container A high-frequency current flows in the antenna to generate plasma in the vacuum container, and the plasma is used to process the substrate, and the plurality of antennas are respectively linear and arranged in parallel, and the antennas adjacent to each other are arranged in parallel. A dielectric member for suppressing the generation of plasma between the antennas is arranged along the antennas therebetween, wherein the plurality of antennas penetrate and are supported by a pair of opposing side walls of the vacuum vessel, and the dielectric members are supported. The electrical member is in the shape of a flat plate provided across from one of the pair of side walls to the other, and when the dimension of the dielectric member perpendicular to the parallel direction of the antenna is the height dimension, the The height dimension of the both ends in the longitudinal direction of the dielectric member is larger than the height dimension of the central part in the longitudinal direction. A plasma processing apparatus generates plasma in a vacuum container by flowing a high-frequency current in a plurality of antennas arranged in a vacuum container, and uses the plasma to process a substrate, and the plurality of The antennas are respectively arranged in a linear shape and arranged in parallel, and a dielectric member for suppressing generation of plasma between the antennas is arranged between the adjacent antennas along the antennas, and the plurality of antennas penetrate through the antennas. a pair of opposite side walls of the vacuum vessel and supported, the dielectric member is in the shape of a flat plate disposed across from one of the pair of side walls to the other, The dielectric member is provided between each of the plurality of antennas, and is disposed at the center of the parallel direction when the dimension of the dielectric member orthogonal to the parallel direction of the antennas is defined as the height dimension The height dimension of the dielectric member between the antennas is larger than the height dimension of the dielectric member between the antennas arranged outside the parallel direction.

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