KR102511989B1 - Inductively coupled plasma processing apparatus - Google Patents

Abstract

The present invention relates to an inductively coupled plasma processing device.
The present invention, and the chamber body 100, the opening is formed on the upper side; a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210; a substrate support part 300 installed on the chamber body 100 to support the substrate 10; a gas injection unit 400 for injecting gas into the processing space (S); an antenna unit 500 installed above the dielectric assembly 200 to form an induction electric field in the processing space S; It includes a plurality of metal wire parts 600 installed for each region inside the dielectric assembly 200, and each of the plurality of metal wire parts 600 is electrically in a floating state, in a ground state, and in a power supply at both ends. Disclosed is an induction electric field plasma processing apparatus, characterized in that it is installed in any one of the applied power supply states.

Description

Inductively coupled plasma processing apparatus {Inductively coupled plasma processing apparatus}

The present invention relates to an inductively coupled plasma processing device.

The inductively coupled plasma processing device is a device that performs substrate processing such as deposition and etching processes. A dielectric material is installed on the ceiling of the chamber body and the chamber body forming a closed processing space, and a radio frequency (RF) antenna is installed on the upper side of the dielectric body. Then, power is applied to the antenna to form an induction field in the processing space, and the processing gas is converted into plasma by the induction field to perform substrate processing.

For good substrate processing, it is important to form uniform plasma in the processing space. As substrates have recently become larger, the uniformity of the plasma formed in the processing space of the inductively coupled plasma processing apparatus deteriorates and it is difficult to control the plasma uniformity.

In addition, the conventional inductively coupled plasma processing apparatus heats the dielectric through an electric resistance heater, but the electric resistance heater is affected by noise by plasma during substrate processing, making it difficult to precisely control the temperature of the heater. There is a problem that overheating or arcing of the heater (coil) occurs due to the influence.

In addition, the conventional inductively coupled plasma processing apparatus has a problem in that plasma uniformity is deteriorated because the plasma in the processing space is affected by the current flowing through the electric resistance heater.

In order to solve this problem, a method of using an electric resistance heater only in a state in which plasma formation is unnecessary, that is, in an idle state, such as during substrate exchange, can be applied. There is a problem in that the heater is in a stopped state and the heater cannot control the temperature change during the process.

An object of the present invention, in order to solve the above problems, by including a plurality of metal wire parts of a metal material installed in each region inside the dielectric, due to the current induced in the metal wire parts by the magnetic field formed by the antenna It is an object of the present invention to provide an inductively coupled plasma processing device capable of controlling plasma in a processing space using an electromagnetic field.

More specifically, an object of the present invention is to reduce the plasma density in the processing space to the dielectric area by combining electrical connection relationships between a plurality of metal wire parts installed in any one of electrically floating, grounded, and power-on states. It is an object of the present invention to provide an inductively coupled plasma processing device that can be precisely controlled for each.

The present invention was created to achieve the object of the present invention as described above, and the chamber body 100 having an opening formed on the upper side; a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210; a substrate support part 300 installed on the chamber body 100 to support the substrate 10; a gas injection unit 400 for injecting gas into the processing space (S); an antenna unit 500 installed above the dielectric assembly 200 to form an induction electric field in the processing space S; It includes a plurality of metal wire parts 600 installed for each area inside the dielectric assembly 200, and each of the plurality of metal wire parts 600 is electrically in a floating state, in a ground state, and when power is applied. Disclosed is an induction electric field plasma processing apparatus, characterized in that it is installed in any one of the power application states.

The capacitor 610 may be a variable capacitor.

The metal wire portion 600 may be perpendicular to or inclined in a plane with the antenna portion 500 positioned directly above it.

At least one of the plurality of metal wire parts 600 may be electrically connected to another metal wire part 600 to form a common plasma control region.

At least one of the plurality of metal wire parts 600 may form a closed loop pattern.

The induction field plasma processing apparatus may further include an insulating cover part 800 covering the metal wire part 600 for insulation from the antenna part 500 .

The metal wire portion 600 may be made of a paramagnetic material.

The induction field plasma processing apparatus may further include a heat medium passage part 900 forming a passage 902 through which a heat medium flows for temperature control of the dielectric 210 .

The heat medium passage part 900 may be installed to contact at least a part of the metal wire part 600 .

The heat medium passage part 900 may be installed inside the dielectric 210 .

The heat medium passage part 900 may be installed for each planar region of the dielectric assembly 200 .

The heat medium passage part 900 may be formed by coating an inner wall of a hole 212 formed inside the dielectric 210 with a resin material 904 .

At least two of the plurality of sub-passage portions 910 may be in fluid communication with each other to form a common temperature control region.

At least one of the plurality of metal wire parts 600 may be electrically connected to another metal wire part 600 to form a common plasma control region.

In this case, the plasma control region and the temperature control region may be defined independently of each other.

An inductively coupled plasma processing apparatus according to the present invention includes a plurality of metal wire parts made of metal material installed in each region inside a dielectric, so that an electromagnetic field generated by a current induced in the metal wire parts by a magnetic field formed by an antenna is used. Thus, there is an advantage in that the plasma in the processing space can be controlled.

More specifically, the inductively coupled plasma processing apparatus according to the present invention combines electrical connection relationships between a plurality of metal wire parts installed in any one of floating, grounding, and power-on states, so that the processing space It is possible to precisely control the plasma density within each dielectric region.

In addition, in the present invention, both heating and cooling of the dielectric can be performed by controlling the temperature of the dielectric by flowing a thermal medium into the flow path formed in the thermal medium flow path, so that the temperature of the dielectric can be precisely maintained at a level required for the process in each region. In addition, there is an advantage in that it is possible to precisely control the temperature of the dielectric during the process without problems such as noise, overheating or arcing due to plasma.

1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention.
FIG. 2 is a plan view showing a part of the configuration of the inductively coupled plasma processing apparatus of FIG. 1 .
3 is an enlarged view of A in FIG. 1 .
4A to 4F are diagrams showing modifications of the inductively coupled plasma processing apparatus of FIG. 1 .
5 is a diagram showing electrical states of metal wire parts of the inductively coupled plasma processing apparatus according to the present invention.
6A to 6H are diagrams illustrating embodiments of electrical states of metal wire parts and electrical connection states between metal wire parts of the inductively coupled plasma processing apparatus according to the present invention.
7 is a plan view showing a heating medium passage of an inductively coupled plasma processing apparatus according to the present invention, and is a view showing a temperature control region formed by the heating medium passage.
8 is a plan view showing metal wire parts installed inside the dielectric of the inductively coupled plasma processing apparatus according to the present invention, and is a view showing a plasma control region formed by the metal wire parts.
9 is a conceptual diagram illustrating the principle of controlling plasma in a processing space by a plurality of metal wire parts in the inductively coupled plasma processing apparatus according to the present invention.

Hereinafter, an inductively coupled plasma processing apparatus according to the present invention will be described with reference to the accompanying drawings.

An inductively coupled plasma processing apparatus according to the present invention includes a chamber body 100 having an opening formed thereon; a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210; a substrate support 300 installed on the chamber body 100 to support the substrate 10; a gas injection unit 400 for injecting gas into the processing space S; An antenna unit 500 installed above the dielectric assembly 200 or inside the dielectric assembly 200 to form an induced electric field in the processing space S is included.

The chamber main body 100, as a configuration for forming the processing space S, can have any configuration as long as it can withstand a predetermined vacuum pressure required for the process.

The chamber body 100 preferably has a shape corresponding to the shape of the substrate 10 to be processed, and for example, may have a rectangular shape.

In addition, the chamber main body 100 has one or more gates 111 for the entry and exit of the substrate 10, and an exhaust pipe connected to a vacuum pump (not shown) to control the pressure in the processing space S and remove by-products. (not shown) may be connected.

In addition, the chamber main body 100 has a detachable upper lid 120 installed to cover the antenna unit 500 for support of the antenna unit 500 and shielding of an induced electric field formed in the antenna unit 500. can be conjoined.

The dielectric assembly 200 is interposed between the processing space S and the antenna unit 500 so as to form an induced electric field in the processing space S by the antenna unit 500 described later, and has various configurations. possible.

For example, the dielectric assembly 200 includes one or more dielectrics 210 installed to cover the opening of the chamber body 100 to form a processing space S, and a support frame 220 supporting the dielectrics 210. ) may be included.

The dielectric 210 is interposed between the processing space S and the antenna unit 200 so that an induced electric field can be formed in the processing space S by the antenna unit 500, and its material is quartz, Ceramics and the like may be used.

The support frame 220 supports the dielectric 210 and may have various shapes and structures depending on the number and structure of the dielectric 210 .

For example, the support frame 220 may have lattice structure openings so as to support a plurality of dielectrics 210 divided into lattice patterns. Through this, as shown in FIGS. 3 , 10 and 11 , the plurality of dielectrics 210 may be installed in various patterns (eg, grid structures) for each region on the plane of the processing space S.

Specifically, the support frame 220 includes an outermost frame 221 forming the outermost frame based on the rectangular opening of the chamber body 100, and one or more inner frames positioned inside the outermost frame 221 ( 222) may be configured to form openings of a lattice structure in which one dielectric 210 is installed.

The outermost frame 221 and the inner frame 222 are preferably made of a material that is paramagnetic and has rigidity, such as aluminum or aluminum alloy having sufficient structural rigidity.

And, the outermost frame 221 and the inner frame 222 are integrally formed or composed of a plurality of frame members, and as a configuration for supporting the dielectric 210, a step formed at the edge of the dielectric 210 is caught. A support step may be formed so as to be possible.

Here, an O-ring (not shown) is installed on the surface where the support frame 220 and the dielectric 210 contact each other to prevent process pressure (preset process pressure) inside the processing space S from leaking to the outside. .

Meanwhile, a shield member 230 may be additionally installed to cover a portion of the dielectric 210 and the support frame 220 exposed to the processing space S.

The shield member 230 may have various structures depending on the structure and shape of the dielectric assembly 200, and may be replaced if necessary.

The substrate support part 300 is a configuration on which the substrate 10 is seated, and can be of any configuration as long as it can support the substrate 10, and can be powered or grounded according to the process, and heat transfer for cooling or heating. member may be installed.

The gas dispensing unit 400 is connected to a gas supply device to inject gas into the processing space S to perform a process, and various configurations are possible.

As shown in FIG. 1 , the gas injection unit 400 may be installed on a sidewall of the chamber body 100 or installed on the dielectric assembly 200 in various ways.

In particular, the gas injection unit 400 may be installed in the support frame 220 supporting the dielectric 210 .

The antenna unit 500 is installed on top of the dielectric assembly 200 or inside the dielectric 210 to form an induced electric field in the processing space S, and various configurations such as a plate member made of metal are possible.

The antenna unit 500 may be installed in various shapes and patterns according to process conditions, and may form an induction electric field plasma in the processing space (S) by receiving external RF power.

For example, as shown in FIG. 3 , the antenna unit 500 may include at least one coil that is grounded at one end and applied with RF power at the other end.

The antenna unit 500 may be arranged in various patterns according to design. For example, coils are arranged in a spiral pattern from the center to the outer portion, or a plurality of antenna members installed corresponding to each dielectric 210. may consist of

In the case of the inductive electric field plasma processing apparatus including the above configuration, it is important to form a uniform plasma in the processing space for good substrate processing. As the substrate has recently become larger, the plasma uniformity formed in the processing space of the inductively coupled plasma processing apparatus , and it is difficult to control the plasma uniformity.

Accordingly, the present invention has the advantage of being able to precisely control the plasma uniformity in the processing space S for each region by including a plurality of metal wire parts 600 to be described later.

The plurality of metal wire parts 600 are installed inside the dielectric assembly 200 for each region and are made of a metal material, particularly a paramagnetic material (eg, Cu material) that does not block the magnetic field caused by the antenna part 500. It can be formed in various shapes and patterns.

Meanwhile, as shown in FIG. 2 , when the dielectric assembly 200 includes a plurality of divided dielectrics 210 corresponding to each region rather than a single dielectric 210, each metal line part 600 is , It may be installed inside the dielectric 210 in various ways.

For example, it is also possible that one metal line part 600 is installed inside to correspond to each dielectric 210, or a plurality of metal line parts 600 are installed to correspond to one dielectric 210 inside.

Specifically, as shown in FIGS. 2, 7 and 8, the dielectric assembly 200 includes a plurality of dielectrics 210 divided into an N×M matrix grid pattern (3×3 matrix shape) In this case, at least two metal wire parts 600 may be installed in correspondence with at least one dielectric 210 .

As another example, it is also possible that one metal line portion 600 is installed across a plurality of dielectrics 210 . At this time, when the metal wire portion 600 passes over to the neighboring dielectric 210, it is preferable to install the metal wire portion 600 and the support frame 220 in an insulated state or not to contact each other.

In addition, as shown in FIGS. 3 and 7 to 8 , each metal wire portion 600 may be formed in a different pattern for each installation area and may be arranged at different densities.

For example, as shown in FIG. 2 , four metal wire parts 600 installed in regions corresponding to vertices of the dielectric assembly 200 are installed in a first pattern shape, and the edges of the dielectric assembly 200 The four metal wire parts 600 installed in the area corresponding to are installed in a second pattern shape, and the one metal wire part 600 installed in the central area of the dielectric assembly 200 is installed in a third pattern shape. can

In addition, at least one of the plurality of metal wire parts 600 may form a closed loop pattern.

More specifically, as shown in FIG. 7, each pattern of the plurality of metal wire parts 600 forms an open-loop, or as shown in FIG. 8, each pattern All of these can form a closed-loop, and as shown in FIG. 2, an embodiment in which some of the patterns of the plurality of metal wire parts 600 form a closed-loop and the remaining patterns form an open-loop is also possible. Of course.

Furthermore, as shown in FIG. 6A , the plurality of metal wire parts 600 may form one closed loop pattern by electrically connecting some of the plurality of metal wire parts 600 to each other. At this time, it can be understood that the electrically connected metal wire parts 600 constitute one metal wire part 600 forming a closed loop pattern.

On the other hand, when the plurality of metal wire parts 600 are installed on the upper surface of the dielectric assembly 200, it is necessary to add an insulating cover part 800 for insulation between the metal wire part 600 and the antenna part 500. However, when the metal wire portion 600 is buried and installed inside the dielectric 210, the insulation cover portion 800 does not need to be installed, thereby reducing manufacturing costs due to the insulation cover portion 800, and also the antenna unit. In terms of the distance between the (100) and the dielectric 210, the degree of freedom is increased to facilitate plasma density control, and the effect of preventing particle formation under the dielectric 210 by the metal wire portion 600 is increased. .

On the other hand, in the drawings including FIG. 2, although the metal wire parts 600 are indicated by solid lines, this is only to visually clarify the installation pattern of the metal wire parts 600, and the metal wire parts 600 are dielectric ( 210) It should be understood that it is installed in a buried state inside.

On the other hand, since the metal wire part 600 is made of a paramagnetic metal material, as shown in FIG. 9, an induced current can be formed in the metal wire part 600 by the magnetic field induced by the antenna part 500, and accordingly Accordingly, the plasma density of the processing space S of the process chamber 100 may be varied.

That is, in the conventional induction plasma substrate processing apparatus, only the plasma induced by the antenna unit 500 is formed in the process chamber 100 without the metal wire portion 600, but the induction electric plasma substrate processing apparatus according to the present invention As shown in FIG. 9 , a metal wire portion 600 through which an induced current flows due to a magnetic field generated by the antenna unit 500 is added between the antenna unit 500 and the process chamber 100, thereby applying the applied current to the antenna unit 500. energy can be transferred to the process chamber 100 through the metal wire part 600, and in this process, the electrical connection state of the metal wire part 600 is different for each region to control the energy delivered to the process chamber 100, Through this, there is an advantage in that plasma uniformity can be adjusted over the entire processing space (S) of the process chamber 100 .

At this time, as shown in FIG. 5, each of the plurality of metal wire parts 600 described above is electrically in any one of a floating state, a ground state, and a power supply state in which power is applied to both ends. Can be installed in various combinations.

The floating state means a state in which no artificial potential is set to the metal wire portion 600 .

In the floating state, the metal wire portion 600 is installed in a floating state in a state in which it is not connected to other components, such as the metal wire portion 600 in the central portion of FIG. ), it may be installed in a floating state while being electrically connected to the capacitor 630. In this case, the capacitor 630 may be a variable capacitor.

The grounding state means a state in which the metal line part 600 is directly or indirectly electrically connected to the grounding point.

In the grounding state, the metal wire portion 600 is either directly grounded like the left side and lower left metal wire portion 600 in FIG. can be grounded through In this case, the capacitor 630 may be a variable capacitor.

The power application state means a state in which power is applied to the metal wire portion 600 through an external RF power source.

In the power-on state, the metal wire portion 600 may be connected to the RF power source at one end and grounded through the capacitor 630 at the other end, like the upper metal wire portion 600 or the lower metal wire portion 600 of FIG. 5 . there is. Although not shown, an embodiment in which the other end of the metal wire portion 600 is directly grounded without going through the capacitor 630 is of course possible.

Through this, electrical states of each region of the plurality of metal wire parts 600 can be variously combined, and accordingly, the plasma density of each region can be controlled, thereby improving plasma uniformity in the processing space S.

On the other hand, in addition to controlling the plasma density for each area where each metal wire part 600 is installed by changing the electrical state of each metal wire part 600, at least two or more metal wire parts 600 are electrically connected to electrically It is also possible to form a plasma control region (D) common to the connected metal line parts 600 .

Here, the plasma control region D may be defined as a region in which a plurality of metal wire parts 600 are grouped into groups including one or more metal wire parts 600 and the plasma density can be controlled for each group. That is, each group is installed independently of each other without an electrical connection relationship, and the metal wire parts 600 belonging to each group are installed to have an electrical connection relationship with each other.

That is, at least one of the plurality of metal wire parts 600 may be electrically connected to another metal wire part 600 to form a common plasma control region D, as shown in FIGS. 6A to 6H. there is.

Meanwhile, in the present invention, the plurality of metal wire parts 600 are buried inside the dielectric 210, and the electrical connection state of the metal wire parts 600 and the electrical connection between the metal wire parts 600 can be implemented through various methods. can

For example, the metal wire portion 600 is electrically connected to another metal wire portion 600 by being connected to a metal connection portion 640 outside the dielectric 210 through an opening (not shown) formed on the upper side of the dielectric 210. can be connected

Specifically, when the dielectric assembly 200 includes a grid-shaped support frame 220 supporting the dielectric 210, the support frame 220 may interfere with the electrical connection of the metal wire parts 600, An external circuit or another metal wire portion 600 may be electrically connected to the metal wire portion 600 through a connection portion 640 connected to the metal wire portion 600 through an opening (not shown) formed on the upper side of the dielectric 210. .

Hereinafter, electrical connection states of the plurality of metal wire parts 600 will be described in detail with reference to FIGS. 6A to 6H.

First, FIGS. 6A and 6C are diagrams illustrating an example in which a plurality of metal wire parts 600 are installed in a floating state in an electrically connected state. As shown in FIGS. 6A and 6C , the plurality of metal wire parts 600 may be electrically connected to each other, form one plasma control area D, and may be installed in a floating state.

Furthermore, as shown in FIG. 6B, the plurality of metal wire parts 600 are electrically connected to each other, form one plasma control region D, and then connect the capacitor 630 to the capacitor 630. It can be installed in a floating state without grounding.

6A to 6C show a case where the metal wire portion 600 is installed in an electrical floating state, but in the state of FIGS. 6A to 6C, the power is additionally grounded (including the case where it is grounded through the capacitor 630). Of course, various electrical connections such as being applied are possible.

In particular, in the case of FIGS. 6A and 6B, a plurality of metal wire parts 600 are electrically connected to each other through a metal connection part 640 to form a closed loop pattern and function like a single metal wire part 600. Show that you can.

At this time, as shown in FIGS.

Next, FIG. 6D is a view showing an example in which the metal wire portion 600 is installed in an electrically grounded state.

At this time, of course, the corresponding metal wire portion 600 can be grounded while being electrically connected to at least one other metal wire portion 600 .

Specifically, as shown in FIGS. 6D and 6E, a plurality of metal line parts 600 are electrically connected to form one plasma control region D and grounded, or as shown in FIGS. 6F and 6G, a plurality of The metal line portion 600 of the metal line portion 600 may form one plasma control region D by mutual electrical connection and be grounded through the capacitor 630.

Specifically, in the embodiment of FIGS. 6F and 6G , the induction electric plasma processing apparatus includes one end of a plurality of metal wire parts 600 in order to install at least one of the plurality of metal wire parts 600 in a grounded state. It may include a capacitor 630 connected to at least one and grounded at the other end.

Depending on the initial setting of the capacitor 630, various potentials based on the ground point may be formed in the metal line portion 600 electrically connected to the capacitor 630.

The capacitor 630 may be a variable capacitor, and more specifically, may be a vacuum variable capacitor (VVC).

Next, FIG. 5F and finally, FIG. 6H is a diagram showing an example of a power application state in which power is applied to the metal wire portion 600 .

In FIG. 6H, one end of the metal line part 600 may be connected to the RF power source and the other end may be grounded.

6A to 6H are only a few examples of possible combinations of the electrical connection state of each metal wire portion 600 and the electrical connection relationship between the plurality of metal wire portions 600, but are not limited to these combinations.

6A to 6H are only a few examples of possible combinations of the electrical connection state of each metal wire portion 600 and the electrical connection relationship between the plurality of metal wire portions 600, but are not limited to these combinations.

As described above, the present invention variously combines the connection relationship (common, plasma control area) and electrical state between the metal wire parts 600, and the charging amount (capacitance) of the metal wire parts 600 for each area The plasma field of the corresponding area can be controlled.

In other words, the present invention can make the charging amount (capacitance) of the corresponding metal wire part 600 different from other areas according to various electrical states of the metal wire part 600 and various connection types between the metal wire parts 600. Depending on the charging amount (capacitance) of the metal wire portion 600, the degree of influence on the plasma field in the processing space may vary, and as a result, control of the plasma in the processing space may be possible.

In particular, when the capacitor 630 is connected to the metal wire portion 600, the capacitance can be easily changed during initial setting or for each process by applying a variable capacitor, and furthermore, in the case of a variable capacitor driven by a motor, in real time during the process It is also possible to control the capacitance, so there is an advantage in that the charging amount (capacitance) of the metal wire portion 600 can be controlled in real time during the process.

That is, the present invention not only varies the electrical state (floating, grounding, power application) of each metal wire portion 600, but also varies the electrical connection (common status) between the metal wire portions 600 to various plasma control areas ( D), and the plasma density can be precisely controlled for each plasma control region (D).

On the other hand, in the induction electric field plasma processing apparatus according to the present invention, a switch unit (not shown) for switching the electrical state (floating, grounding, power application) of each metal wire portion 600 or the electrical connection between the metal wire portions 600 may additionally include.

Through the switch unit, an electrical state of a specific metal wire portion 600 or an electrical connection relationship between metal wire portions 600 may be varied.

On the other hand, as described above, each metal wire portion 600 can be formed in various patterns, but when viewed in relation to the antenna portion 500, it is installed so as to form a vertical or inclined plane with the antenna portion 500 located directly above it. this is most preferable

This means that when the metal wire part 600 and the antenna part 500 on the right side are parallel to each other, the induced current in the opposite direction cancels the magnetic field induced by the antenna part 500 on the right side of the metal wire part 600. is formed.

That is, when the metal wire part 600 and the antenna part 500 at the top are perpendicular to each other, since the magnetic field induced in the metal wire part 600 does not interfere with the magnetic field by the antenna part 500, the metal wire part 600 ) and the antenna unit 500 directly above it are preferably arranged perpendicular to each other rather than parallel or inclined.

In addition, when the metal wire portion 600 is perpendicular to the antenna portion 500 directly above it, the metal wire portion 600 can be more easily installed even in an area where the antenna portion 500 does not exist, and the antenna portion ( 500), there is also an additional advantage of being able to further intensify plasma in a region where plasma formation by the antenna unit 500 is relatively weak.

Meanwhile, the induction field plasma processing apparatus may further include a heat medium passage part 900 forming a passage 902 through which a heat medium flows for temperature control of the dielectric 210 .

That is, the induction electric field plasma processing apparatus according to the present invention controls the density of plasma in the processing space using the above-described metal wire portion 600 to secure the uniformity of the plasma density, and uses the heat medium passage portion 900 to be described later to obtain a dielectric material. The temperature of (210) can be controlled.

In the conventional inductively coupled plasma processing apparatus, when heating the dielectric 210 is required, the dielectric is heated through an electric resistance heater. During substrate processing, the electric resistance heater is affected by noise by plasma and precisely controls the temperature of the heater. In addition, there is a problem that overheating or arcing of the heater (coil) occurs due to the influence of the plasma, and the plasma in the processing space is affected by the current flowing through the heater. In order to overcome this problem, a method of using an electric resistance heater can be applied only in a state in which plasma formation is unnecessary, that is, in an idle state, such as during substrate exchange, but this method does not operate the heater during the process. There is a problem in that the heater is in a stopped state and the heater cannot control the temperature change during the process.

In the present invention, since the temperature of the dielectric 210 can be controlled using a heat medium rather than an electric resistance heater by including a heat medium passage part 900 to be described later, when temperature control of the dielectric 210 is required in the process, metal It is possible to precisely control the temperature of the dielectric 210 through the heating medium passage part 900 along with the plasma uniformity control through the wire part 600 for each area, and there is no problem of affecting the plasma in the processing space or noise caused by the plasma. It has the advantage of being able to control the temperature even during processing.

The heat medium passage part 900, if the temperature of the dielectric 210 can be controlled using the flow of the heat medium, can be installed in various positions and in various shapes, can be made of various materials, and can be made of a single member or a plurality of It can be configured through a combination of members.

In one embodiment, the heat medium passage part 900, as shown in FIGS. 4A to 4E, may be installed inside the dielectric 210 as a buried structure.

At this time, as shown in FIG. 7, the heat medium passage part 900, similar to the metal wire part 600, is a plurality of sub-passage parts 910 installed for each planar area inside the dielectric assembly 200. may include

As shown in FIG. 7 , each of the plurality of sub-passage portions 910 may be formed in various patterns. Since the flow of the heating medium (inlet and outlet) must be formed in the sub-passage portion 910, it is preferable to have an open loop pattern as shown in FIG. 7, but a closed loop pattern like the metal wire portion 600 in FIG. It is also possible to form a closed loop in a pattern by connecting the open part (opening part) of the open loop with a separate metallic auxiliary connecting member (not shown) when the sub-passage portion 910 is made of a metal material. Of course, it is also possible to form. That is, although the passage of the sub-passage 910 has an open loop pattern in which an inlet and an outlet are formed, the sub-passage 910 can patternly form a closed loop through an auxiliary connection member, Through the connection member, it is possible to have an advantage of forming various electrical patterns in terms of plasma control.

At this time, the heat medium flow passage part 900 may be installed so as not to overlap with the metal wire part 600 or overlap with at least a part of the metal wire part 600 to come into contact with it.

For example, as shown in FIG. 7 , the plurality of sub-passage portions 910 may be overlapped with at least a portion of the metal wire portion 600 formed in the pattern shown in FIG. 8 and formed along the metal wire portion 600. there is. Although not shown, an embodiment in which the plurality of sub-passage portions 910 are installed completely independently of the metal wire portion 600 is of course possible.

Meanwhile, the plurality of sub-passage portions 910 may be made of various materials such as metal or ceramic, but when the plurality of sub-passage portions 910 are made of a metal material, the plurality of sub-passage portions 910 In addition to simply performing a temperature control function, a plasma control function may be performed together with the metal wire portion 600 .

At this time, the plasma control through the plurality of sub-passage parts 910 uses the electrical state of each of the sub-passage parts 910 and the electrical connection state between the sub-passage parts 910 to control the metal wire part 600 described above. Since it can be performed in the same way as the plasma control used, detailed description is omitted.

However, even if the heat medium passage part 900 is made of a metal material, it can be configured to perform only temperature control of the dielectric 210 without plasma control.

On the other side, an embodiment in which the heat medium passage part 900 is made of a material other than metal and is configured to perform only the temperature control function of the dielectric 210 is also possible.

Meanwhile, at least two of the plurality of sub-passage units 910 may be installed to fluidly interlock with each other to form a common temperature control region. When at least two of the plurality of sub-passage units 910 are in fluid communication, a temperature control region capable of temperature control for each region can be formed, and a structure for the inlet and outlet of the heating medium has the advantage of simplifying

For example, the plurality of sub-passage portions 910 may be installed inside or above the dielectric 210 in a pattern as shown in FIG. can form Here, the sub-passage units 910 belonging to each of the temperature control regions L, M, and N are installed in fluid communication with each other.

At this time, the induction electric field plasma processing apparatus according to the present invention is provided with one or more inlets through which the heat medium flows into the heat medium passage part 900 and one or more outlets through which the heat medium flows out from the heat medium passage part 900, In the present invention, a temperature sensor unit (not shown) for sensing the temperature of the dielectric 210 or the sub-passage unit 910 and a control unit for controlling the temperature of the heat medium flowing through the inlet using the temperature value monitored through the temperature sensor unit can include

By installing at least some of the plurality of sub-passage units 910 in fluid communication with each other, the plurality of sub-passage units 900 can be grouped into a plurality of groups (a plurality of temperature control areas) in fluid communication with each other, and the control unit It is possible to control the temperature of the fluid flowing into the sub-passage unit 900 existing in the grouped temperature control area through .

Here, referring to FIGS. 7 and 8, the plasma control area (O, P, Q, R in FIG. 8) by the above-described metal wire portion 600 and the temperature control area by the heat medium passage part 900 (FIG. 7 L, M, N of) can be partitioned (defined) independently of each other, and do not have to match each other.

However, when the plurality of sub-passage portions 910 are made of a metal material and perform a plasma control function together with the metal wire portion 600, the plurality of sub-passage portions 910 are formed in the plasma control regions O, P, and Q , R) should be installed so that they are insulated from each other at the boundary and at the same time are in fluid communication with each other in the temperature control area (L, M, N). Therefore, the heat medium passage part 900 may further include an insulation passage (not shown) installed at the boundary of the plasma control region to enable fluid communication while maintaining insulation between the sub passage parts 910. .

Meanwhile, the sub-passage portion 910 may include a pipe portion 912 in which a passage 902 through which a heating medium flows is formed, and may have various shapes such as a circular shape or a prismatic cross section.

The pipe part 912 may be made of various materials such as metal or ceramic, and may have a circular or angular cross-sectional shape.

For example, when the pipe part 912 has a circular cross-section, the sub-passage part 910 efficiently transfers heat generated from the pipe part 912 to the dielectric material 210 as shown in FIG. 4E. A thermal diffusion block 914 for diffusion may be further included.

The thermal diffusion block 914 is installed to come into contact with at least a portion of the side surfaces such as the upper, side, and lower sides of the pipe part 912 to promote thermal diffusion to the dielectric 210, and various configurations are possible.

At this time, when the plurality of sub-passage portions 910 are installed in contact with at least some of the side surfaces of the metal wire portion 600, the metal wire portion 600 is a flow path ( 902) has an advantage of being able to perform a thermal diffusion function for maximizing thermal diffusion to the dielectric 210 by the heat medium flowing along.

In this case, as shown in FIGS. 4C to 4E , the pipe part 912 may be installed to overlap at least a part of the side surface of the metal wire part 600 in order to increase thermal diffusion efficiency.

As another example, as shown in FIG. 4B, when the cross section of the sub-passage portion 910 is angular, it can come into surface contact with the dielectric 210 when the sub-passage portion 910 is installed, so that the dielectric 210 in the heat medium There is an advantage in that heat transfer to ) can be made more easily and a separate thermal diffusion block 914 can be omitted.

On the other hand, when the heat medium passage part 900 is made of a metal material and performs a plasma control function together with the metal wire part 600, the electrical connection between each sub passage part 910 is made of a dielectric material 210 It can be implemented through a connecting member (not shown) made of metal that is connected to and in contact with each sub-passage unit 910 through a hole formed in the upper portion.

Similarly, insulating each other while enabling fluid communication between the sub-passage units 910 is an insulating flow path (not shown) communicating with each sub-passage unit 910 through a hole formed on the dielectric 210. can be implemented through

An embodiment in which the sub-channel portion 910 is made of a ceramic material rather than metal is also possible, but in this case, the plurality of sub-channel portions 910 can only perform a temperature control function for the dielectric 210 .

As another example in which the heat medium passage part 900 is buried and installed inside the dielectric 210, the heat medium passage part 900 is formed on the inner wall of the hole 212 formed inside the dielectric 210. ) may be formed by being coated.

Although FIG. 4A shows a case where the cross section of the hole 212 is circular, it can be formed in various shapes such as an angular shape, of course.

As shown in FIGS. 4A to 4E , when the heat medium passage part 900 is buried inside the dielectric 210, the degree of freedom in which the distance between the antenna part 500 and the dielectric 210 can be varied increases. Therefore, there is an advantage in terms of plasma control, the heat transfer efficiency for the dielectric 210 is improved, and the temperature control is easier. In particular, when the heat medium passage part 900 is made of a metal material, the dielectric (210) There is an additional benefit of reduced particle accumulation on the lower surface. In addition, as shown in FIG. 4F, there is also an advantage that the installation of the insulating cover part 800 for insulating the heat medium passage part 900 and the antenna part 500 from each other can be omitted.

In another embodiment, the heat medium passage part 900 may be installed above the dielectric 210, as shown in FIG. 4F.

At this time, the heat medium passage part 900 may be configured the same as or similar to the above-described embodiment except that it is installed on the upper side of the dielectric 210 instead of inside the dielectric 210, focusing on the differences in detail. Explain.

At this time, when the heat medium passage part 900 is made of a metal material, it needs to be electrically insulated from the antenna part 500 installed on the upper side. An insulating cover part 800 covering the heat medium passage part 900 may be further included for insulation from the heat medium passage part 900 .

The insulating cover part 800 may be made of various materials and shapes as long as it can insulate the heat medium passage part 900 and the antenna part 500.

For example, the insulating cover part 800 may be a cover member made of Teflon, but is not limited thereto.

As the insulating cover part 800 covering the heat medium passage part 900 is installed, the heat medium passage part 900 and the antenna part 500 are maintained in an insulated state and heat is lost through the upper side of the dielectric 210. It has the effect of preventing it from happening.

On the other hand, the above-described pipe portion 912 may be installed in contact with the upper surface of the dielectric 210, and may have a cross-sectional shape of various shapes such as circular or prismatic, and may be made of various materials such as metal or ceramic.

When the cross-sectional shape of the pipe part 912 is made of a prismatic shape, as shown in FIG. 4F, the pipe part 912 can face the upper surface of the dielectric 210, so that the heat transfer to the dielectric 210 through the heat medium is efficiently achieved There are benefits to being able to

However, when the pipe portion 912 has a circular cross-section, although not shown, as shown in FIG. 4E, one or more thermal diffusion blocks 914 for maximizing heat transfer efficiency are provided to at least a portion of the pipe portion 912 and the dielectric 210 ) can be installed to interview on the upper surface.

In conclusion, according to the present invention, the temperature of the dielectric 210 can be controlled by flowing the heat medium along the heat medium passage part 900 . Since the present invention does not heat the dielectric 210 by an electric heater method, problems such as noise, arcing, and overheating do not occur due to plasma, so heating or cooling of the dielectric 210 by a heat medium is possible during the process, and accordingly Accordingly, when the dielectric 210 or the shield member 230 is present, the temperature of the shield member 230 may be maintained at a temperature optimized for the substrate processing process without generating particles.

In particular, when a process is performed by applying relatively low power to the antenna unit 500 (eg, SD process (source drain process)), as low power is applied to the antenna unit 500, the dielectric 210 Since the temperature is relatively low and particles are easily generated in the dielectric 210 or the shield member 230, the necessity of heating the dielectric 210 through a heater is high, and the dielectric 210 through a heat medium as in the present invention A temperature control method can be applied more usefully.

Through the above configuration, the induction electric field plasma processing apparatus according to the present invention can precisely control the plasma density for each plasma control area of the processing space (S), thereby securing the uniformity of the plasma density, and for each temperature control area There is an advantage that temperature control of the dielectric 210 can also be performed together.

Since the above has only been described with respect to some of the preferred embodiments that can be implemented by the present invention, as noted, the scope of the present invention should not be construed as being limited to the above embodiments, and the scope of the present invention described above It will be said that the technical idea and the technical idea together with the root are all included in the scope of the present invention.

100: chamber body 200: dielectric assembly
300: substrate support part 400: gas injection part
500: antenna unit

Claims (15)

a chamber body 100 having an opening formed thereon;
a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210;
a substrate support part 300 installed on the chamber body 100 to support the substrate 10;
a gas injection unit 400 for injecting gas into the processing space (S);
An antenna unit 500 installed above the dielectric assembly 200 to form an induction electric field in the processing space S,
In order to control the plasma density in the processing space (S) for each region of the dielectric assembly 200, a plurality of metal wire parts 600 installed for each region inside the dielectric assembly 200 are further included,
Each of the plurality of metal wire parts 600 is electrically installed in one of a floating state, a ground state, and a power supply state in which power is applied. The method of claim 1,
The induction electric field plasma processing device is a capacitor connected to at least one of the plurality of metal wire parts 600 at one end and grounded at the other end in order to install at least one of the plurality of metal wire parts 600 in the ground state. An induction electric field plasma processing apparatus further comprising (630). The method of claim 2,
The capacitor 630 is an induction electric plasma processing apparatus, characterized in that a variable capacitor. The method of claim 1,
The inductive electric field plasma processing apparatus, characterized in that the metal wire portion 600 forms a vertical or inclined plane with the antenna portion 500 located directly above. The method of claim 1,
At least one of the plurality of metal wire parts (600) is electrically connected to another metal wire part (600) to form a common plasma control region. The method of claim 5,
At least one of the plurality of metal wire parts 600 forms a closed loop pattern. The method of claim 1,
The induction electric plasma processing apparatus further comprises an insulating cover part 800 covering the metal wire part 600 for insulation from the antenna part 500. The method of claim 1,
The metal wire portion 600 is an inductive electric field plasma processing apparatus, characterized in that made of a paramagnetic material. The method of claim 1,
The induction electric field plasma processing device,
The inductive electric field plasma processing apparatus further comprises a heat medium passage part 900 forming a passage 902 through which a heat medium flows for temperature control of the dielectric 210. The method of claim 9,
The inductive electric field plasma processing apparatus, characterized in that the heat medium passage portion (900) is installed to contact at least a part of the metal wire portion (600). The method of claim 9,
The inductive electric field plasma processing apparatus, characterized in that the heat medium passage portion (900) is installed inside the dielectric (210). The method of claim 9,
The inductive electric field plasma processing apparatus, characterized in that the heat medium passage portion 900 includes a plurality of sub-passage portions 910 installed for each planar region of the dielectric assembly 200. The method of claim 9,
The heat medium passage portion 900 is formed by coating an inner wall of a hole 212 formed inside the dielectric 210 with a resin material 904. The method of claim 12,
At least two of the plurality of sub-passage portions 910 are in fluid communication with each other to form a common temperature control region. The method of claim 14,
At least one of the plurality of metal wire parts 600 is electrically connected to another metal wire part 600 to form a common plasma control region,
The inductive electric field plasma processing apparatus, characterized in that the plasma control region and the temperature control region are defined independently of each other.

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