KR101554341B1 - Apparatus for Processing Substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus for processing a substrate by using an inductively coupled plasma, wherein a heat transfer tube is piped in a predetermined pattern along a partition frame on a partition frame constituting a lead frame, The heat of the heat medium flowing along the heat transfer tube can be reliably transmitted to the dielectric window of the partition frame and its surroundings.

Description

[0001] Apparatus for Processing Substrate [

The present invention relates to an apparatus for processing a substrate using plasma.

Plasma etching techniques such as plasma etching (RIE), reactive ion etching (RIE), magnetically enhanced reactive ion etching (MERIE), electron cyclotron resonance (ECR), transformer coupled plasma (TCP) (inductively coupled plasma) method. High density plasma formation, uniformity of plasma concentration, etc., are important for the processing performance of the substrate. Therefore, a variety of plasma generation methods have been studied and developed, and one of them is ICP (Inductively Coupled Plasma) method.

In the substrate processing apparatus using the ICP method, a substrate is loaded in a substrate processing chamber of a chamber, a stage having electrodes is provided, an antenna for providing RF power is provided on a chamber, a dielectric window window. A processing gas is supplied to the substrate processing chamber, and a plasma is generated by the action of an electrode, an antenna, etc., and the substrate loaded on the stage is processed by plasma.

In the process of processing the substrate by the plasma, a byproduct such as a polymer is generated, and a by-product is deposited and deposited on the lower surface of the dielectric window (the surface exposed to the plasma). If the deposited by-product is removed from the dielectric window during the processing of the substrate, a process failure may be caused.

Currently, the problem with deposition of byproducts in the dielectric window is solved by using a cleaning method that periodically removes the by-products deposited from the dielectric window, a method of installing a replacement-type anti-evaporation cover on the bottom surface of the dielectric window, and the like. However, as the size of the chamber and the dielectric window increase with the demand for enlargement of the flat panel display (FPD), the conventional method alone can solve the problems caused by deposition of the byproduct on the dielectric window. It is urgently required.

Embodiments of the present invention are directed to providing a substrate processing apparatus that is advantageous in terms of preventing deposition of byproducts (such as polymers) on the dielectric window.

The problems to be solved by the present invention are not limited thereto, and other matters which are not mentioned can be understood by those skilled in the art from the following description.

According to an embodiment of the present invention, there is provided a plasma processing apparatus comprising: a chamber body having a processing chamber for processing a substrate using an inductively coupled plasma therein and having an opening at an upper side thereof; A lead frame installed at an opening of the chamber body and including a frame and a dividing frame dividing an inner space defined by the outer frame into a plurality of unit spaces; A dielectric window inserted into each of the plurality of unit spaces; A heat transfer pipe which is piped on the partition frame in a predetermined pattern along the partition frame and through which heat medium flows and which transfers heat to each other by heat transfer with the partition frame; And a heat transfer pipe cover for fixing the position of the heat transfer pipe by closely contacting the heat transfer pipe to the partition frame.

A first receiving groove for receiving a lower portion of the outer circumference of the heat transfer tube is provided on the partition frame. A second receiving groove for receiving the upper portion of the outer circumference of the heat transfer tube may be provided on the heat transfer tube cover. The first receiving groove and the second receiving groove may be formed in a shape corresponding to the outer circumference of the heat transfer tube.

The heat transfer pipe cover may be configured to have thermal conductivity.

The heat transfer tubes may be arranged to be positioned in a central region of the lead frame.

The lead frame may be provided along the inner circumferential direction of the unit space so as to support the edge portion of the dielectric window. The substrate processing apparatus according to an embodiment of the present invention includes a window fixing portion for pressing the edge portion of the dielectric window in a state where the dielectric window cover and the heat transfer tube are covered with the partition frame to closely contact the dielectric window with the dielectric window, Block. ≪ / RTI >

The substrate processing apparatus according to an embodiment of the present invention may further include a heating medium supply unit for supplying a heating medium to the heat transfer pipe. The heating medium supply unit may include at least one of a heating medium heating mechanism and a heating medium cooling mechanism.

Means for solving the problems will be more specifically and clarified through the embodiments, drawings, and the like described below. In addition, various solution means other than the above-mentioned solution means may be further proposed.

According to the embodiment of the present invention, since the lead frame and its surrounding dielectric window are heated by the heating means (the heat transfer tube provided in the lead frame, the heated heat transfer medium supplied to the heat transfer tube, and the heat transfer tube cover covering the heat transfer tube) It is possible to prevent the byproducts such as polymer from being deposited on the lower surface of the lead frame and the lower surface of the dielectric window in the process, thereby improving the reliability of the substrate processing process.

In addition, since the lead frames and the dielectric windows around them are cooled by the cooling means (the heat transfer tubes provided in the lead frame, the cooling heat medium supplied to the heat transfer tubes, and the heat transfer tube cover covering the heat transfer tubes) And the dielectric window can be cooled quickly to return to the original temperature.

1 is a configuration diagram showing a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a plan view showing the lead frame shown in Fig. 1. Fig.
3 is a perspective view showing a part of the lead frame shown in Figs. 1 and 2. Fig.
4 is an enlarged cross-sectional view of part A of Fig.
5 is a configuration diagram showing a heating medium supply unit of the substrate processing apparatus according to the embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. For the sake of convenience, it is to be understood that the present invention is not limited to the above embodiments, and various changes and modifications may be made without departing from the scope of the present invention. Further, the terms used to describe the embodiments of the present invention are mainly defined in consideration of the functions of the present invention, and thus may be changed depending on the intentions and customs of the user and the operator. Therefore, the terminology should be interpreted based on the contents of the present specification throughout.

A substrate processing apparatus according to an embodiment of the present invention is configured to process a substrate using inductively coupled plasma (ICP) at a processing chamber (see R1 in FIG. 1). 1 to 5 show a substrate processing apparatus according to an embodiment of the present invention.

As shown in FIG. 1, the substrate processing apparatus according to the embodiment of the present invention includes processing chambers 10B and 10L. The processing chambers 10B and 10L are provided with a chamber body 10B having a processing chamber R1 for processing a substrate therein and an upper side opened (a structure provided with openings on the upper side) And a lead (lid) 10L provided on the upper side.

The side wall constituting the chamber main body 10B is provided with a gate slit (not shown) serving as a substrate entrance. The substrate to be processed is brought into the processing chamber R1 through the gate slit, and the substrate processed in the processing chamber R1 is taken out through the gate slit. A stage 40 on which a substrate carried in the process chamber R1 is placed is provided below the process chamber R1.

Although not shown, the gate slit is opened and closed by a gate valve, and the stage 40 includes an electrode.

The lid 10L includes a lid frame 20 and a lead frame 20 which are provided on the opened upper side of the chamber main body 10B and support a plurality of dielectric windows 50 constituting the upper portion of the process chamber R1 And a frame cover 30 provided on the upper side of the lead frame 20 and forming an antenna chamber R2 in which the antenna 60 is positioned.

The lead frame 20 is made of a metal applicable to a substrate processing apparatus using inductively coupled plasma. As an example, the material of the lead frame 20 may be a metal containing aluminum with good thermal conductivity.

As shown in Figs. 1 and 2, the lead frame 20 includes a frame body 10B, which is mounted on the opened upper side of the chamber body 10B and forms a frame having a shape corresponding to the opened upper side of the chamber body 10B, And a partition frame 22 dividing an inner space defined by the outer frame 21 and the outer frame 21 into a plurality of unit spaces (reference numeral 23 in Fig. 3).

The partition frame 22 has a structure in which a plurality of sections are mutually intersected. Specifically, the plurality of partition frames 22 may be configured so as to have a lattice-like structure as a whole when they are orthogonal to each other.

A dielectric window 50 is provided in each of the unit spaces 23 defined by the partition frame 22. Each of the unit spaces 23 is provided with a jaw portion 24 that supports the edge portion of the dielectric window 50 along the inner circumferential direction and the dielectric window 50 is formed in the unit space 23 so that the edge portion is supported by the jaw portion 24. [ . According to the dielectric window 50 and the lead frame 20 thus installed, the processing chambers 10B and 10L are divided into an upper space and a lower space of the processing chambers 10B and 10L so that the lower portion is the processing chamber R1 and the upper portion is the antenna chamber R2 .

The dielectric window 50 may be made of ceramic. An antenna 60 is provided on the dielectric window 50 to form an induction field for plasmaizing the process gas supplied to the process chamber Rl. The antenna 60 is connected to RF power supply means (not shown). The process gas is supplied to the process chamber R1 by at least one process gas injection unit (not shown) for injecting a process gas from a process gas supply source (not shown). An exhausting means (not shown) for exhaust and vacuum atmosphere composition is connected to the process chamber R1.

The substrate is placed on the stage 40 and the processing chamber R1 is maintained in a vacuum atmosphere to supply the processing gas to the processing chamber R1 to form an induction field in the processing chamber R1, When the gas is changed to plasma, the substrate is treated by plasma. Byproducts such as polymers are generated in the process of the substrate and the byproducts are suspended in the process chamber R1 and deposited on the lower surface of the lead frame 20 or the lower surface of the dielectric window 50. [

In order to suppress deposition of byproducts such as polymer on the lower surface of the lead frame 20 and the lower surface of the dielectric window 50, the substrate processing apparatus according to the embodiment of the present invention heats the lead frame 20, And a lead frame heating-cooling means (70) for transferring heat to the window (50) or for cooling rapidly after heating.

The lead frame heating-cooling means 70 includes a heat medium flow path (reference numeral 71 in Figs. 1, 2 and 4) arranged along the partition frame 22 on the partition frame 22 so as to be positioned at the center of the lead frame 20 (Refer to reference numerals 72 to 77) for supplying a heating medium (a fluid used for heating or cooling) heated or cooled to the heating medium flow path.

As shown in Figs. 2 to 4, the heat medium flow path is constituted by a pipe of the heat transfer pipe 71 which is piped. The heat transfer pipe (71) is made of a material having excellent thermal conductivity. For example, the material of the heat transfer pipe 71 may be stainless steel (SUS).

On the partition frame 22, a first receiving groove portion 25 in which the heat transfer tube 71 is placed is provided. The first accommodating groove portion 25 is formed to have a size that accommodates the lower portion of the outer periphery of the heat transfer tube 71 and is formed in a shape corresponding to the lower portion of the outer periphery of the heat transfer tube 71 to be in contact with the lower portion of the outer periphery of the heat transfer tube 71 .

The heat transfer tubes 71 placed in the first receiving recesses 25 are in close contact with the first receiving recesses 25 by a plurality of heat transfer tube covers 78 and their positions are fixed. A lower portion of the heat transfer pipe cover (78) is provided with a second receiving recess for receiving the upper portion of the outer periphery of the heat transfer pipe (71). The second receiving groove portion of the heat transfer pipe cover 78 is formed in a shape corresponding to the other upper portion of the outer periphery of the heat transfer pipe 71 and can be in general contact with the remaining upper portion of the outer periphery of the heat transfer pipe 71.

The heat transfer pipe cover 78 is made of a metal having excellent thermal conductivity. For example, the heat transfer pipe cover 78 may be made of the same or similar material as the lead frame 20.

The plurality of heat transfer pipe covers 78 are respectively fastened to the partition frame 22 by bolts or the like while covering the heat transfer pipes 71 at different positions to press the heat transfer pipe 71. Alternatively, the plurality of heat transfer pipe covers 78 may be connected to each other so as to cover the entire heat transfer pipe 71 so that the heat transfer pipe 71 is not partially exposed. Alternatively, the entire heat transfer pipe 71 may be covered by a single heat transfer pipe cover.

Reference numeral 55 denotes a window fixing block and the window fixing block 55 is disposed on the outer frame 21 and the partition frame 22 along the longitudinal direction of the outer frame 21 and the partition frame 22, (Not shown) are fastened to the frame 21 and the partition frame 22 by bolts or the like, respectively, so as to press the dielectric window 50 while covering the edge of the dielectric frame 50. The window fixing block 55 is provided with a cover receiving recess for receiving the heat transfer pipe cover 78 at a lower portion thereof so that the heat transfer pipe cover 78 accommodated in the cover receiving recess portion contacts the window fixing block 55.

The heat transfer pipe (71) has a structure in which the heating medium from the heating medium supply unit flows through the inlet, flows along the duct (heating medium flow path), and then discharged through the outlet. 5, the heating medium supply unit includes a heating medium tank 72 in which the heating medium is stored, a heating medium heating mechanism 73 for heating the heating medium stored in the heating medium tank 72, a heating medium stored in the heating medium tank 72, A heating medium supply line 75 having both ends connected to the inlet of the heat transfer pipe 71 and the heating medium tank 72 respectively and both ends connected to the outlet of the heat transfer pipe 71 and the heating medium tank 72 respectively A heating medium return line 76, and a heating medium circulation pump 77 provided on the heating medium supply line 75.

The substrate processing apparatus according to the embodiment of the present invention can supply the heated heating medium to the lead frame 20 by operating the heating medium heating mechanism 73 and the heating medium circulation pump 77 when processing the substrate. That is, the heating medium stored in the heating medium tank 72 is heated by the heating medium heating mechanism 73, and the heated heating medium is supplied to the heat transfer pipe 71 along the heating medium supply line 75 by the action of the heating medium circulation pump 77 do. The heating medium supplied to the heat transfer pipe 71 passes through a conduit (heating medium flow path) of the heat transfer pipe 71 and then is discharged to the heating medium recovery line 76 and recovered to the heating medium tank 72.

The heated heating medium circulating in this way heats the central portion of the lead frame 20 by the heat transfer action (mainly thermal conduction) in the process of flowing along the duct (heat medium flow path) of the heat transfer pipe 71, And the heat in the center of the lead frame 20 is transmitted to its periphery to raise the temperature of the dielectric window 50. [ Of course, the temperature of the antenna chamber R2 also increases. Particularly, the heat transfer pipe 71 of metal is in close contact with the heat transfer pipe cover 78 of the metal and the partition plate 21 of the metal in a state of being accommodated in the receiving space formed by the first accommodating groove 25 and the second accommodating groove, Since the heat transfer pipe cover 78 is brought into contact with the partition frame 21, heat transfer can be effectively achieved.

Therefore, the substrate processing apparatus according to the embodiment of the present invention can reliably prevent the byproduct such as polymer from being deposited on the lower surface of the lead frame 20 and the lower surface of the dielectric window 50 in processing the substrate.

The substrate processing apparatus according to the embodiment of the present invention can operate the heating medium cooling mechanism 74 and the heating medium circulation pump 77 to supply the cooled heating medium to the lead frame 20 have. Then, during the processing of the substrate, the heated lead frame 20 and the dielectric window 50 can be cooled to rapidly lower the temperature.

4, a clean kit 80 is made of the same or similar material as the dielectric window 50, and a plurality of the clean kits 80 are arranged next to each other on the lower surface of the lead frame 20 So that the lower surface of the lead frame 20 can be shielded. According to the clean kit 80, byproducts such as polymers generated during processing of the substrate can be prevented from being directly deposited on the lower surface of the lead frame 20 and the lower surface of the dielectric window 50. That is, a by-product such as a polymer is deposited on the clean kit 80. The clean kit 80 can be heated by receiving heat from the lead frame 20 and the dielectric window 50.

4 is a shielding member and the shielding member 85 is mounted on the partition frame 22 so as to be positioned between the neighboring clean kits 80 and between the neighboring clean kits 80. [ Thereby preventing the partition frame 22 from being exposed to the plasma through the gap. Preferably, the lower surface of the partition frame 22 is provided with a groove 26 in which the shielding member 85 is accommodated, and the shielding member 85 housed in the partition frame 22 is the same as the lower surface of the partition frame 22 Plane. The shielding member 85 may be equally mounted to the outer frame 21 depending on the operating conditions and the like.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

For example, the heat transfer pipe 71 is disposed at the center of the lead frame 20, but the heat transfer pipe 71 is connected to the edge of the lead frame 20 or the lead frame 20 20 to be positioned over the entirety of the partition frame 22. Of course, depending on the operating conditions, the heat transfer pipe 71 may be piped not only to the partition frame 22 but also to the outer frame 21. [

Although the heat transfer tubes 71 are shown in FIG. 2 as being arranged in a substantially rectangular shape, the arrangement pattern of the heat transfer tubes 71 is not necessarily limited thereto.

10B: chamber body
20: Lead frame
21: Outer frame
22: compartment frame
23: Unit space
24: jaw
40: stage
50: Window
60: antenna
71: pipe
72: heat medium tank
73: heating medium heating mechanism
74: Heat medium cooling mechanism
R1: Treatment room
R2: Antenna room

Claims (7)

A chamber body having a processing chamber for processing a substrate by using an inductively coupled plasma and having an opening at an upper side thereof;
A lead frame installed at an opening of the chamber body and including a frame and a dividing frame dividing an inner space defined by the outer frame into a plurality of unit spaces;
A dielectric window inserted into each of the plurality of unit spaces;
A frame cover provided on the lead frame and forming an antenna chamber between the lead frame and the lead frame;
A heat transfer pipe that is piped along the partition frame on the partition frame and through which a heating medium flows;
And a heat transfer pipe cover which fixes the position of the heat transfer pipe to the partition frame and is made of a thermally conductive metal and is in contact with the heat transfer pipe and radiates heat transferred from the heat transfer pipe to the antenna chamber.
/ RTI > The method according to claim 1,
A first receiving groove for receiving a lower portion of the outer periphery of the heat transfer tube is provided on the partition frame,
Wherein the heat transfer pipe cover is provided with a second receiving recess for receiving the upper portion of the outer periphery of the heat transfer pipe,
/ RTI > The method of claim 2,
Wherein the first receiving groove portion and the second receiving groove portion are formed in a shape corresponding to the outer periphery of the heat transfer tube,
/ RTI > The method according to any one of claims 1 to 3,
Wherein the heat transfer pipe cover is formed to have a larger surface area than a portion where the heat transfer pipe cover is in contact with the heat transfer pipe,
/ RTI > The method according to any one of claims 1 to 3,
Wherein the heat transfer tube is arranged to be positioned in a central region of the lead frame,
/ RTI > The method according to claim 1,
Wherein the lead frame is provided along the inner circumferential direction of the unit space with a tuck portion for supporting the edge portion of the dielectric window,
The substrate processing apparatus includes:
Further comprising a ceramic window fixing block for pressing the edge portion of the dielectric window and closely contacting the dielectric window with the dielectric window in a state that the heat conductive tube cover and the heat conductive tube cover the partition frame to which the heat conductive tube is piped,
/ RTI > The method according to claim 1,
Further comprising a heating medium supply unit for supplying a heating medium to the heat transfer tube,
Wherein the heating medium supply unit includes at least one of a heating medium heating mechanism and a heating medium cooling mechanism,
/ RTI >

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