KR102543131B1 - Inductively coupled plasma processing apparatus - Google Patents

Abstract

The present invention relates to an inductively coupled plasma processing device.
The present invention, and the chamber body 100, the opening is formed on the upper side; a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210; a substrate support part 300 installed on the chamber body 100 to support the substrate 10; a gas injection unit 400 for injecting gas into the processing space (S); an antenna unit 500 installed inside the dielectric 210 to form an induced electric field in the processing space S; It includes a plurality of metal wire parts 600 located on the upper side of the dielectric assembly 200 for each region, and each of the plurality of metal wire parts 600 is electrically in a floating state, in a ground state, and when power is applied. Disclosed is an induction electric field plasma processing apparatus, characterized in that it is installed in any one of the power application states.

Description

Inductively coupled plasma processing apparatus {Inductively coupled plasma processing apparatus}

The present invention relates to an inductively coupled plasma processing device.

The inductively coupled plasma processing device is a device that performs substrate processing such as deposition and etching processes. A dielectric material is installed on the ceiling of the chamber body and the chamber body forming a closed processing space, and a radio frequency (RF) antenna is installed on the upper side of the dielectric body. Then, power is applied to the antenna to form an induction field in the processing space, and the processing gas is converted into plasma by the induction field to perform substrate processing.

For good substrate processing, it is important to form uniform plasma in the processing space. As substrates have recently become larger, the uniformity of the plasma formed in the processing space of the inductively coupled plasma processing apparatus deteriorates and it is difficult to control the plasma uniformity.

In addition, the conventional inductively coupled plasma processing apparatus heats the dielectric through an electric resistance heater, but the electric resistance heater is affected by noise by plasma during substrate processing, making it difficult to precisely control the temperature of the heater. There is a problem that overheating or arcing of the heater (coil) occurs due to the influence.

In addition, the conventional inductively coupled plasma processing apparatus has a problem in that plasma uniformity is deteriorated because the plasma in the processing space is affected by the current flowing through the electric resistance heater.

In order to solve this problem, a method of using an electric resistance heater only in a state in which plasma formation is unnecessary, that is, in an idle state, such as during substrate exchange, can be applied. There is a problem in that the heater is in a stopped state and the heater cannot control the temperature change during the process.

An object of the present invention, in order to solve the above problems, is to include a plurality of metal wire parts or a plurality of metal flow passage parts made of metal material installed for each region on the upper surface of the dielectric, so that a magnetic field formed by an antenna is applied to the metal wire parts. It is an object of the present invention to provide an inductively coupled plasma processing device capable of controlling plasma in a processing space using an electromagnetic field generated by an induced current.

More specifically, an object of the present invention is to combine electrical connection relationships between a plurality of metal wire parts or a plurality of metal passage parts installed in any one of electrically floating, grounding, and power-on states, It is an object of the present invention to provide an inductively coupled plasma processing device capable of precisely controlling the plasma density within each dielectric upper surface region.

In addition, an object of the present invention is to control the temperature of the dielectric by flowing a heat medium in a flow path formed in the metal flow path or the heat medium flow path to perform both heating and cooling of the dielectric, so that the temperature of the dielectric can be adjusted to the required process for each region It is an object of the present invention to provide an inductively coupled plasma processing device capable of precisely controlling the temperature of a dielectric material during a process without problems such as noise, overheating or arcing caused by plasma.

The present invention was created to achieve the object of the present invention as described above, and the chamber body 100 having an opening formed on the upper side; a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210; a substrate support part 300 installed on the chamber body 100 to support the substrate 10; a gas injection unit 400 for injecting gas into the processing space (S); an antenna unit 500 installed inside the dielectric 210 to form an induced electric field in the processing space S; It includes a plurality of metal wire parts 600 located on the upper side of the dielectric assembly 200 for each region, and each of the plurality of metal wire parts 600 is electrically in a floating state, in a ground state, and when power is applied. Disclosed is an induction electric field plasma processing apparatus, characterized in that it is installed in any one of the power application states.

The induction electric field plasma processing apparatus is connected to at least one of the plurality of metal wire parts 600 at one end and grounded at the other end in order to install at least one of the plurality of metal wire parts 600 in the ground state. 1 capacitor 630 may be additionally included.

The first capacitor 630 may be a variable capacitor.

The metal wire portion 600 may be perpendicular or inclined in plane with the antenna portion 500 positioned directly below.

At least one of the plurality of metal wire parts (600) is electrically connected to another metal wire part (600) to form a common plasma control region.

At least one of the plurality of metal wire parts 600 may form a closed loop pattern.

The induction field plasma processing apparatus may further include a heat medium passage part 900 forming a passage 902 through which a heat medium flows for temperature control of the dielectric 210 .

The heat medium passage part 900 may be installed to contact at least a part of the metal wire part 600 .

The heat medium passage part 900 may be installed inside the dielectric 210 .

The heat medium passage part 900 may include a plurality of sub passage parts 910 installed for each area on a plane of the dielectric assembly 200 .

At least two of the plurality of sub-passage portions 910 may be in fluid communication with each other to form a common temperature control region.

At least one of the plurality of metal wire parts 600 is electrically connected to another metal wire part 600 to form a common plasma control region, and the plasma control region and the temperature control region are defined independently of each other. can

In another aspect, the present invention includes a chamber body 100 having an opening formed thereon; a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210; a substrate support part 300 installed on the chamber body 100 to support the substrate 10; a gas injection unit 400 for injecting gas into the processing space (S); an antenna unit 500 installed inside the dielectric 210 to form an induced electric field in the processing space S; It is installed on the upper surface of the dielectric assembly 200 for each region and includes a plurality of metal passage parts 700 forming a passage 602 through which the heating medium flows, and each of the plurality of metal passage parts 700 electrically Disclosed is an induction electric plasma processing apparatus characterized in that it is installed in any one of a floating state, a ground state, and a power supply state in which power is applied.

The inductive electric field plasma processing apparatus is connected to at least one of the plurality of metal flow path parts 700 at one end and grounded at the other end in order to install at least one of the plurality of metal flow path parts 700 in the ground state. A second capacitor 730 may be included.

The second capacitor 730 may be a variable capacitor.

At least two of the plurality of metal passage parts 700 may be in fluid communication with each other to form a common temperature control region.

The induction electric field plasma processing apparatus may further include an insulating flow path unit that fluidly communicates at least two of the plurality of metal flow path units 700 in a state of being insulated from each other.

The metal passage part 700 may be perpendicular to or inclined in plane with the antenna part 500 positioned directly below.

At least one of the plurality of metal passage parts 700 may be electrically connected to another metal passage part 700 to form a common plasma control region.

The induction electric plasma processing apparatus may further include a connection part 740 that electrically connects at least one of the plurality of metal passage parts 700 to another metal passage part 700 while blocking fluid communication. .

At least one of the plurality of metal passage parts 700 is electrically connected to another metal passage part 700 to form a common plasma control region, and the temperature control region and the plasma control region are independently of each other. can be defined

The metal passage part 700 may include a metal pipe part 710 in which the passage 702 is formed.

The metal pipe part 710 may have a prismatic cross section, and may be installed to make surface contact with the upper surface of the dielectric 210 .

The metal passage part 700 may further include a thermal diffusion block 720 interposed between the metal tube part 710 and the dielectric 210 for thermal diffusion into the dielectric 210 .

The metal passage part 700 forms an open loop pattern in which an inlet 704 through which a heat medium flows in and an outlet 706 through which a heat medium flows out are formed at both ends, respectively. An auxiliary connecting member 708 electrically connecting the opening of the may be further included.

The inductively coupled plasma processing apparatus according to the present invention includes a plurality of metal wire parts or a plurality of metal flow passage parts made of metal material installed for each region on the upper surface of a dielectric, so that a current induced in the metal wire parts by a magnetic field formed by an antenna There is an advantage in that the plasma in the processing space can be controlled using the electromagnetic field generated by the process.

More specifically, in the inductively coupled plasma processing apparatus according to the present invention, the electrical connection relationship between a plurality of metal wire parts or a plurality of metal passage parts installed in any one of floating, grounding, and power supply states. By combining, it is possible to precisely control the plasma density in the processing space for each dielectric upper surface region.

In addition, the present invention can perform both heating and cooling of the dielectric by controlling the temperature of the dielectric by flowing a thermal medium into a flow path formed in the metal flow path or the heat medium flow path, thereby reducing the temperature of the dielectric to a level required for the process for each region. In addition to being precisely maintained, there is an advantage in that the temperature of the dielectric can be precisely controlled during the process without problems such as noise, overheating, or arcing caused by plasma.

1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention.
FIG. 2 is an enlarged view showing an enlarged portion A of FIG. 1 .
FIG. 3A and FIG. 3D are diagrams showing modifications of the inductively coupled plasma processing apparatus of FIG. 1 .
4 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.
FIG. 5 is an enlarged view showing an enlarged portion B of FIG. 4 .
FIG. 6 is a view showing a modified example of the inductively coupled plasma processing apparatus of FIG. 4 .
7 is a plan view showing a part of the configuration of an inductively coupled plasma processing apparatus according to the present invention.
FIG. 8A is a plan view showing a part of the configuration of the inductively coupled plasma processing apparatus of FIG. 1 and showing electrical states of metal wire parts.
FIG. 8B is a plan view showing a part of the configuration of the inductively coupled plasma processing apparatus of FIG. 4 and showing electrical states of metal passage parts.
9A to 9H are diagrams explaining electrical connection states of metal wire parts or metal passage parts.
10 is a view showing a temperature control region formed by metal flow passages or heat medium flow passages in the inductively coupled plasma processing apparatus according to the present invention.
11 is a view showing a plasma control region formed by metal wire parts or metal flow path parts in the inductively coupled plasma processing apparatus according to the present invention.
12 is a conceptual diagram explaining the principle of controlling plasma in a processing space by a plurality of metal wire parts or a plurality of metal passage parts in the inductively coupled plasma processing apparatus according to the present invention.

Hereinafter, an inductively coupled plasma processing apparatus according to the present invention will be described with reference to the accompanying drawings.

An inductively coupled plasma processing apparatus according to the present invention includes a chamber body 100 having an opening formed thereon; a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210; a substrate support 300 installed on the chamber body 100 to support the substrate 10; a gas injection unit 400 for injecting gas into the processing space S; An antenna unit 500 installed inside the dielectric assembly 200 to form an induction electric field in the processing space S is included.

The chamber main body 100, as a configuration for forming the processing space S, can have any configuration as long as it can withstand a predetermined vacuum pressure required for the process.

The chamber body 100 preferably has a shape corresponding to the shape of the substrate 10 to be processed, and for example, may have a rectangular shape.

In addition, the chamber main body 100 has one or more gates 111 for the entry and exit of the substrate 10, and an exhaust pipe connected to a vacuum pump (not shown) to control the pressure in the processing space S and remove by-products. (not shown) may be connected.

In addition, the chamber main body 100 has a detachable upper lid 120 installed to cover the antenna unit 500 for support of the antenna unit 500 and shielding of an induced electric field formed in the antenna unit 500. can be conjoined.

The dielectric assembly 200 is interposed between the processing space S and the antenna unit 500 so as to form an induced electric field in the processing space S by the antenna unit 500 described later, and has various configurations. possible.

For example, the dielectric assembly 200 includes one or more dielectrics 210 installed to cover the opening of the chamber body 100 to form a processing space S, and a support frame 220 supporting the dielectrics 210. ) may be included.

The dielectric 210 is interposed between the processing space S and the antenna unit 200 so that an induced electric field can be formed in the processing space S by the antenna unit 500, and its material is quartz, Ceramics and the like may be used.

The support frame 220 supports the dielectric 210 and may have various shapes and structures depending on the number and structure of the dielectric 210 .

For example, the support frame 220 may have lattice structure openings so as to support a plurality of dielectrics 210 divided into lattice patterns. Through this, as shown in FIGS. 3 , 10 and 11 , the plurality of dielectrics 210 may be installed in various patterns (eg, grid structures) for each region on the plane of the processing space S.

Specifically, the support frame 220 includes an outermost frame 221 forming the outermost frame based on the rectangular opening of the chamber body 100, and one or more inner frames positioned inside the outermost frame 221 ( 222) may be configured to form openings of a lattice structure in which one dielectric 210 is installed.

The outermost frame 221 and the inner frame 222 are preferably made of a material that is paramagnetic and has rigidity, such as aluminum or aluminum alloy having sufficient structural rigidity.

And, the outermost frame 221 and the inner frame 222 are integrally formed or composed of a plurality of frame members, and as a configuration for supporting the dielectric 210, a step formed at the edge of the dielectric 210 is caught. A support step may be formed so as to be possible.

Here, an O-ring (not shown) is installed on the surface where the support frame 220 and the dielectric 210 contact each other to prevent process pressure (preset process pressure) inside the processing space S from leaking to the outside. .

Meanwhile, a shield member 230 may be additionally installed to cover a portion of the dielectric 210 and the support frame 220 exposed to the processing space S.

The shield member 230 may have various structures depending on the structure and shape of the dielectric assembly 200, and may be replaced if necessary.

The substrate support part 300 is a configuration on which the substrate 10 is seated, and can be of any configuration as long as it can support the substrate 10, and can be powered or grounded according to the process, and heat transfer for cooling or heating. member may be installed.

The gas dispensing unit 400 is connected to a gas supply device to inject gas into the processing space S to perform a process, and various configurations are possible.

As shown in FIG. 1 , the gas injection unit 400 may be installed on a sidewall of the chamber body 100 or installed on the dielectric assembly 200 in various ways.

In particular, the gas injection unit 400 may be installed in the support frame 220 supporting the dielectric 210 .

The antenna unit 500 is installed inside the dielectric assembly 200, in particular, the dielectric 210 to form an induced electric field in the processing space S, and various configurations such as a plate member made of metal are possible. .

The antenna unit 500 may be installed in various shapes and patterns according to process conditions, and may receive external RF power to form an induction electric field plasma in the processing space (S).

For example, as shown in FIG. 7 , the antenna unit 500 may include at least one coil that is grounded at one end and applied with RF power at the other end.

The antenna unit 500 may be arranged in various patterns according to design, for example, a coil is arranged in a spiral pattern from the center to the outer portion, or a plurality of antenna members installed inside each dielectric 210 may consist of

Meanwhile, FIG. 7 shows the antenna unit 500 as a solid line, but this is only for convenience of description. It needs to be understood as being installed. As shown in FIG. 7, when the antenna unit 500 is installed to pass through a plurality of dielectrics 210 and the support frame 220 is made of a metal material, the antenna unit 500 maintains insulation from the support frame 220. It is preferable to install it in the state.

In the case of the inductive electric field plasma processing apparatus including the above configuration, it is important to form a uniform plasma in the processing space for good substrate processing. As the substrate has recently become larger, the plasma uniformity formed in the processing space of the inductively coupled plasma processing apparatus , and it is difficult to control the plasma uniformity.

Accordingly, the inductive electric field plasma processing apparatus according to the first embodiment of the present invention includes a plurality of metal wire parts 600 to be described later, so that the plasma uniformity in the processing space S can be precisely controlled for each area. there is.

The plurality of metal wire parts 600 are installed on the upper surface of the dielectric assembly 200 for each region and are made of a metal material, particularly a paramagnetic material (eg, Cu material) that does not block the magnetic field caused by the antenna part 500. It can be formed in various shapes and patterns.

On the other hand, as shown in FIGS. 7, 8A, 10, and 11, the dielectric assembly 200 includes a plurality of dielectrics 210 divided in correspondence with each region, rather than a single dielectric 210. In this case, each metal line portion 600 may be installed on the upper surface of the dielectric 210 in various ways.

For example, it is also possible that one metal line part 600 is installed to correspond to each dielectric 210, or a plurality of metal line parts 600 are installed to correspond to one dielectric 210.

Specifically, as shown in FIGS. 7, 8A, and 10 and 11 , the dielectric assembly 200 is divided into a grid pattern (3×3 matrix form) in the form of an N × M matrix and a plurality of dielectrics (210). ), at least two metal line parts 600 may be installed to correspond to at least one dielectric 210 .

As another example, it is also possible that one metal line part 600 is installed across a plurality of dielectrics 210 . At this time, when the metal wire portion 600 passes over to the neighboring dielectric 210, it is preferable that the metal wire portion 600 and the support frame 220 are installed in an insulated state or not in contact with each other.

In addition, as shown in FIGS. 7, 8A, 10, and 11 , each metal wire portion 600 may be formed in a different pattern for each installation area and may be arranged at different densities.

For example, as shown in FIG. 7 , the four metal wire parts 600 installed in the region corresponding to the vertex of the dielectric assembly 200 are installed in a first pattern shape, and the edges of the dielectric assembly 200 The four metal wire parts 600 installed in the area corresponding to are installed in a second pattern shape, and the one metal wire part 600 installed in the central area of the dielectric assembly 200 is installed in a third pattern shape. can

In addition, at least one of the plurality of metal wire parts 600 may form a closed loop pattern.

More specifically, as shown in FIG. 10, each pattern of the plurality of metal wire parts 600 forms an open-loop, or as shown in FIG. 11, each pattern All of these can form a closed-loop, and as shown in FIG. 7, an embodiment in which some of the patterns of the plurality of metal wire parts 600 form a closed-loop and the remaining patterns form an open-loop is also possible. Of course.

Furthermore, as shown in FIGS. 9A and 9B , some of the plurality of metal wire parts 600 may be electrically connected to each other to form one closed loop pattern. . At this time, it can be understood that the electrically connected metal wire parts 600 constitute one metal wire part 600 forming a closed loop pattern.

On the other hand, since the metal wire part 600 is made of a paramagnetic metal material, as shown in FIG. 12, an induced current can be formed in the metal wire part 600 by the magnetic field induced by the antenna part 500, and accordingly Accordingly, the plasma density of the processing space S of the process chamber 100 may be varied.

That is, in the conventional induction plasma substrate processing apparatus, only the plasma induced by the antenna unit 500 is formed in the process chamber 100 without the metal wire portion 600, but the induction electric plasma substrate processing apparatus according to the present invention As shown in FIG. 12, by adding a metal wire portion 600 through which an induced current flows due to a magnetic field generated by the antenna unit 500 between the antenna unit 500 and the process chamber 100, the applied current is applied to the antenna unit 500. energy can be transferred to the process chamber 100 through the metal wire part 600, and in this process, the electrical connection state of the metal wire part 600 is different for each region to control the energy delivered to the process chamber 100, Through this, there is an advantage in that plasma uniformity can be adjusted over the entire processing space (S) of the process chamber 100 .

At this time, as shown in FIGS. 8A and 9A to 9H, each of the plurality of metal wire parts 600 described above is in an electrically floating state, a ground state, and a power applied state in which power is applied to both ends. It can be installed in various combinations in any one state.

The floating state means a state in which no artificial potential is set to the metal wire portion 600 .

In the floating state, the metal wire portion 600 is installed in a floating state in a state in which it is not connected to other components, such as the metal wire portion 600 in the central portion of FIG. ), it can be installed in a floating state while being electrically connected to the first capacitor 630. In this case, the first capacitor 630 may be a variable capacitor.

The grounding state means a state in which the metal line part 600 is directly or indirectly electrically connected to the grounding point.

In the grounding state, the metal wire portion 600 is either directly grounded like the left side and lower left metal wire portion 600 in FIG. 8A, or the first capacitor ( 630) can be grounded. In this case, the first capacitor 630 may be a variable capacitor.

The power application state means a state in which power is applied to the metal wire portion 600 through an external RF power source.

In the power-on state, the metal wire portion 600 is connected to the RF power source at one end and grounded through the first capacitor 630 at the other end, like the upper metal wire portion 600 or the lower metal wire portion 600 in FIG. 8A. It can be. Although not shown, an embodiment in which the other end of the metal wire portion 600 is directly grounded without going through the first capacitor 630 is of course possible.

Through this, electrical states of each region of the plurality of metal wire parts 600 can be variously combined, and accordingly, the plasma density of each region can be controlled, thereby improving plasma uniformity in the processing space S.

On the other hand, in addition to controlling the plasma density for each area where each metal wire part 600 is installed by changing the electrical state of each metal wire part 600, at least two or more metal wire parts 600 are electrically connected to electrically It is also possible to form a plasma control region (D) common to the connected metal line parts 600 .

Here, the plasma control region D may be defined as a region in which a plurality of metal wire parts 600 are grouped into groups including one or more metal wire parts 600 and the plasma density can be controlled for each group. That is, each group is installed independently of each other without an electrical connection relationship, and the metal wire parts 600 belonging to each group are installed to have an electrical connection relationship with each other.

That is, at least one of the plurality of metal wire parts 600 may be electrically connected to another metal wire part 600 to form a common plasma control region D, as shown in FIGS. 9A to 9H. there is.

Hereinafter, electrical connection states of the plurality of metal wire parts 600 will be described in detail with reference to FIGS. 9A to 9H.

First, FIGS. 9A and 9C are diagrams illustrating an example in which a plurality of metal wire parts 600 are installed in a floating state in an electrically connected state. As shown in FIGS. 9A and 9C , the plurality of metal wire parts 600 may be electrically connected to each other, form one plasma control area D, and may be installed in a floating state.

Furthermore, as shown in FIG. 9B, the plurality of metal line parts 600 are electrically connected to each other, form one plasma control region D, and then connect the first capacitor 630 to the first capacitor 630. It can be installed in a floating state without grounding of 630.

9A to 9C show a case where the metal wire portion 600 is installed in an electrically floating state, but is additionally grounded in the state of FIGS. 9A to 9C (including a case where it is grounded through the first capacitor 630). Of course, various electrical connections such as power is applied are possible.

In particular, in the case of FIGS. 9A and 9B, a plurality of metal wire parts 600 are electrically connected to each other through a metal connection part 640 to form a closed loop pattern and function like a single metal wire part 600. Show that you can.

At this time, as shown in FIGS. 9A to 9H , the plasma control region D may be set separately from the region of the dielectric 210 without being dependent on the region divided by the dielectric 210 .

Next, FIG. 9D is a view showing an example in which the metal wire portion 600 is installed in an electrically grounded state.

At this time, of course, the corresponding metal wire portion 600 can be grounded while being electrically connected to at least one other metal wire portion 600 .

Specifically, as shown in FIGS. 9D and 9E, a plurality of metal line parts 600 are electrically connected to form one plasma control region D and grounded, or as shown in FIGS. 9F and 9G, a plurality of The metal line portion 600 of the metal line portion 600 may form one plasma control region D by mutual electrical connection and be grounded through the first capacitor 630 .

Specifically, in the embodiment of FIGS. 9F and 9G , the induction electric plasma processing apparatus includes one of the plurality of metal wire parts 600 at one end in order to install at least one of the plurality of metal wire parts 600 in a grounded state. It may include a first capacitor 630 connected to at least one and grounded at the other end.

Depending on the initial setting of the first capacitor 630, various potentials based on the ground point may be formed in the metal line portion 600 electrically connected to the first capacitor 630.

The first capacitor 630 may be a variable capacitor, and more specifically, may be a vacuum variable capacitor (VVC).

Finally, FIG. 9H is a diagram showing an example of a power application state in which power is applied to the metal wire portion 600 .

In FIG. 9H, one end of the metal wire portion 600 may be connected to the RF power source and the other end may be grounded.

9A to 9H are only a few examples of possible combinations of the electrical connection state of each metal wire portion 600 and the electrical connection relationship between the plurality of metal wire portions 600, but are not limited to these combinations.

As described above, the present invention variously combines the connection relationship (common, plasma control area) and electrical state between the metal wire parts 600, and the charging amount (capacitance) of the metal wire parts 600 for each area The plasma field of the corresponding area can be controlled.

In other words, the present invention can make the charging amount (capacitance) of the corresponding metal wire part 600 different from other areas according to various electrical states of the metal wire part 600 and various connection types between the metal wire parts 600. Depending on the charging amount (capacitance) of the metal wire portion 600, the degree of influence on the plasma field in the processing space may vary, and as a result, control of the plasma in the processing space may be possible.

In particular, when the first capacitor 630 is connected to the metal wire part 600, the capacitance can be easily changed during initial setting or for each process by applying a variable capacitor, and furthermore, in the case of a variable capacitor driven by a motor, during the process It is also possible to control the capacitance in real time, so there is an advantage in that the charging amount (capacitance) of the metal wire portion 600 can be controlled in real time during the process.

That is, the present invention not only varies the electrical state (floating, grounding, power application) of each metal wire portion 600, but also varies the electrical connection (common status) between the metal wire portions 600 to various plasma control areas ( D), and the plasma density can be precisely controlled for each plasma control region (D).

On the other hand, in the induction electric field plasma processing apparatus according to the present invention, a switch unit (not shown) for switching the electrical state (floating, grounding, power application) of each metal wire portion 600 or the electrical connection between the metal wire portions 600 may additionally include.

Through the switch unit, an electrical state of a specific metal wire portion 600 or an electrical connection relationship between metal wire portions 600 may be varied.

On the other hand, as described above, each metal wire portion 600 may be formed in various patterns, but when viewed in relation to the antenna portion 500, it is installed so as to form a vertical or inclined plane with the antenna portion 500 located directly below this is most preferable

This is because, when the metal wire part 600 and the antenna part 500 directly below are parallel to each other, the induced current in the reverse direction cancels the magnetic field induced by the antenna part 500 directly under the metal wire part 600. is formed.

That is, when the metal wire part 600 and the antenna part 500 directly below are perpendicular to each other, since the magnetic field induced in the metal wire part 600 does not interfere with the magnetic field by the antenna part 500, the metal wire part 600 ) and the antenna unit 500 directly below it are preferably arranged so as to be perpendicular to each other rather than parallel or inclined.

In addition, when the metal wire portion 600 is perpendicular to the antenna portion 500 directly below it, the metal wire portion 600 can be more easily installed even in an area where the antenna portion 500 does not exist, and the antenna portion ( 500), there is also an additional advantage of being able to further intensify plasma in a region where plasma formation by the antenna unit 500 is relatively weak.

In addition, since the metal wire parts 600 need to be electrically insulated from other members, the inductively coupled plasma processing apparatus according to the present invention covers the metal wire parts 600 in order to insulate the metal wire parts 600. A cover part 800 may be additionally included.

The insulating cover part 800 may be made of various materials and shapes as long as it can insulate the metal wire part 600 from other members.

For example, the insulating cover part 800 may be a cover member made of Teflon, but is not limited thereto.

As the insulating cover portion 800 covering the metal wire portion 600 is installed, the metal wire portion 600 is maintained in an insulated state from other members, and heat loss through the upper side of the dielectric 210 is prevented. there is

Meanwhile, the induction field plasma processing apparatus may further include a heat medium passage part 900 forming a passage 902 through which a heat medium flows for temperature control of the dielectric 210 .

That is, the induction electric field plasma processing apparatus according to the present invention controls the density of plasma in the processing space using the above-described metal wire portion 600 to secure the uniformity of the plasma density, and uses the heat medium passage portion 900 to be described later to obtain a dielectric material. The temperature of (210) can be controlled.

In the conventional inductively coupled plasma processing apparatus, when heating the dielectric 210 is required, the dielectric is heated through an electric resistance heater. During substrate processing, the electric resistance heater is affected by noise by plasma and precisely controls the temperature of the heater. In addition, there is a problem that overheating or arcing of the heater (coil) occurs due to the influence of the plasma, and the plasma in the processing space is affected by the current flowing through the heater. In order to overcome this problem, a method of using an electric resistance heater can be applied only in a state in which plasma formation is unnecessary, that is, in an idle state, such as during substrate exchange, but this method does not operate the heater during the process. There is a problem in that the heater is in a stopped state and the heater cannot control the temperature change during the process.

In the present invention, since the temperature of the dielectric 210 can be controlled using a heat medium rather than an electric resistance heater by including a heat medium passage part 900 to be described later, when temperature control of the dielectric 210 is required in the process, metal It is possible to precisely control the temperature of the dielectric 210 through the heating medium passage part 900 along with the plasma uniformity control through the wire part 600 for each area, and there is no problem of affecting the plasma in the processing space or noise caused by the plasma. It has the advantage of being able to control the temperature even during processing.

The heat medium passage part 900, if the temperature of the dielectric 210 can be controlled using the flow of the heat medium, can be installed in various positions and in various shapes, can be made of various materials, and can be made of a single member or a plurality of It can be configured through a combination of members.

In one embodiment, the heat medium passage part 900 may be installed above the dielectric 210, as shown in FIG. 3C.

At this time, as shown in FIG. 10 , the heat medium passage part 900 includes a plurality of sub passage parts 910 installed for each planar region of the dielectric assembly 200, similarly to the metal wire part 600. can do.

As shown in FIG. 10 , each of the plurality of sub-passage portions 910 may be formed in various patterns. Since the flow (inlet and outlet) of the heating medium must be formed in the sub-passage portion 910, it is preferable to have an open loop pattern as shown in FIG. 10, but a closed loop pattern like the metal wire portion 600 in FIG. It is also possible to form, when the sub-passage portion 910 is made of a metal material, a pattern is formed by connecting the open part (opening part) of the open loop with a separate conductor using a metal auxiliary connecting member (not shown). Of course, it is also possible to form a closed loop. That is, although the passage of the sub-passage 910 has an open loop pattern in which inlets and outlets are formed, since the sub-passage 910 can electrically form a closed loop through an auxiliary connection member, the auxiliary connection The member may have an advantage of forming various electrical patterns in terms of plasma control.

At this time, the heat medium flow passage part 900 may be installed so as not to overlap with the metal wire part 600 or overlap with at least a part of the metal wire part 600 to come into contact with it.

For example, as shown in FIG. 10 , the plurality of sub-passage portions 910 may be formed along the metal wire portion 600 on at least a part of the upper side of the metal wire portion 600 formed in the pattern shown in FIG. 11 . Although not shown, an embodiment in which the plurality of sub-passage portions 910 are installed completely independently of the metal wire portion 600 is of course possible.

Meanwhile, the plurality of sub-passage portions 910 may be made of various materials such as metal or ceramic, but when the plurality of sub-passage portions 910 are made of a metal material, the plurality of sub-passage portions 910 In addition to simply performing a temperature control function, a plasma control function may be performed together with the metal wire portion 600 . In this case, the plasma control through the plurality of sub-passage units 910 may be performed in the same manner as the above-described plasma control using the metal wire unit 600, and thus a detailed description thereof will be omitted. However, even if the heat medium passage part 900 is made of a metal material, it can be configured to perform only temperature control of the dielectric 210 without plasma control.

On the other side, an embodiment in which the heat medium passage part 900 is made of a material other than metal and is configured to perform only the temperature control function of the dielectric 210 is also possible.

Meanwhile, at least two of the plurality of sub-passage units 910 may be installed to fluidly interlock with each other to form a common temperature control region. When at least two of the plurality of sub-passage units 910 are in fluid communication, a temperature control region capable of temperature control for each region can be formed, and a structure for the inlet and outlet of the heating medium has the advantage of simplifying

For example, the plurality of sub-passage portions 910 may be installed inside or above the dielectric 210 in a pattern as shown in FIG. can form Here, the sub-passage units 910 belonging to each of the temperature control regions L, M, and N are installed in fluid communication with each other.

At this time, the induction electric field plasma processing apparatus according to the present invention is provided with one or more inlets through which the heat medium flows into the heat medium passage part 900 and one or more outlets through which the heat medium flows out from the heat medium passage part 900, In the present invention, a temperature sensor unit (not shown) for sensing the temperature of the dielectric 210 or the sub-passage unit 910 and a control unit for controlling the temperature of the heat medium flowing through the inlet using the temperature value monitored through the temperature sensor unit can include

By installing at least some of the plurality of sub-passage units 900 in fluid communication with each other, the plurality of sub-passage units 900 can be grouped into a plurality of groups (a plurality of temperature control regions) in fluid communication with each other, and the control unit It is possible to control the temperature of the fluid flowing into the sub-passage unit 900 existing in the grouped temperature control area through .

Here, referring to FIGS. 10 and 11, the plasma control area (O, P, Q, R in FIG. 8) by the above-described metal wire part 600 and the temperature control area by the heat medium passage part 900 (FIG. 7 L, M, N of) can be partitioned (defined) independently of each other, and do not have to match each other.

However, when the plurality of sub-passage portions 910 are made of a metal material and perform a plasma control function together with the metal wire portion 600, the plurality of sub-passage portions 910 are formed in the plasma control regions O, P, and Q , R) should be installed so that they are insulated from each other at the boundary and at the same time are in fluid communication with each other in the temperature control area (L, M, N). Therefore, the heat medium passage part 900 may further include an insulation passage (not shown) installed at the boundary of the plasma control region to enable fluid communication while maintaining insulation between the sub passage parts 910. .

Meanwhile, the sub-passage portion 910 may include a pipe portion 912 in which a passage 902 through which a heating medium flows is formed, and may have various shapes such as a circular shape or a prismatic cross section. The pipe part 912 may be made of various materials such as metal or ceramic.

For example, when the pipe part 912 has a circular cross-section, the sub-passage part 910 efficiently transfers heat generated from the pipe part 912 to the dielectric material 210 as shown in FIG. 3D. A thermal diffusion block 914 for diffusion may be further included.

The thermal diffusion block 914 is installed to come into contact with at least a portion of the side surfaces such as the upper, side, and lower sides of the pipe part 912 to promote thermal diffusion to the dielectric 210, and various configurations are possible.

At this time, when the plurality of sub-passage parts 910 are installed in contact with the upper side of the metal wire part 600, the heat medium flowing through the metal wire part 600 along the flow path 902 even if the above-described separate thermal diffusion block is not included. There is an advantage of being able to perform a thermal diffusion function for maximizing thermal diffusion into the dielectric 210 by the.

In this case, as shown in FIG. 3C, the pipe part 912 may be installed to overlap at least a part of the side surface of the metal wire part 600 in order to increase thermal diffusion efficiency.

As another example, when the sub-passage portion 910 has a prismatic cross section, when the sub-passage portion 910 is installed, surface contact may be made with the dielectric 210, so that heat transfer from the heating medium to the dielectric 210 can be more easily achieved. There is an advantage in that a separate thermal diffusion block 914 can be omitted.

An embodiment in which the sub-channel portion 910 is made of a ceramic material rather than metal is also possible, but in this case, the plurality of sub-channel portions 910 can only perform a temperature control function for the dielectric 210 .

In another embodiment, the heat medium passage part 900, as shown in FIGS. 3A, 3B, and 3D, may be installed inside the dielectric 210 as a buried structure.

In this case, the heat medium passage part 900 may be configured the same as or similar to the above-described embodiment except that it is buried inside the dielectric 210 instead of on the upper side, and the differences will be described in detail.

The above-described pipe portion 912 may be installed by being embedded in the dielectric 210, and may have various shapes such as circular or prismatic cross-sections.

When the cross-sectional shape of the pipe part 912 is made of a prismatic shape, as shown in FIG. 4B, the pipe part 912 can come into contact with the inner wall of the dielectric 210, so that heat can be efficiently transferred to the dielectric 210 through the heat medium. There is an advantage to being

However, when the cross-sectional shape of the pipe portion 912 is circular, as shown in FIG. 3D, one or more thermal diffusion blocks 914 for maximizing heat transfer efficiency are provided to at least a portion of the pipe portion 912 and the dielectric 210. It can be installed in contact with the inner wall.

When the heat medium passage part 900 is made of a metal material and performs a plasma control function together with the metal wire part 600, the electrical connection between each sub passage part 910 is formed on the dielectric 210 It can be implemented through a connecting conductor connected to each sub-passage portion 910 through a formed hole.

Similarly, insulating each other while enabling fluid communication between the sub-passage units 910 is an insulating flow path (not shown) communicating with each sub-passage unit 910 through a hole formed on the dielectric 210. can be implemented through

As another example in which the heat medium passage part 900 is buried and installed inside the dielectric 210, the heat medium passage part 900 is formed on the inner wall of the hole 212 formed inside the dielectric 210. ) may be formed by coating.

Although FIG. 3A shows a case where the cross section of the hole 212 is circular, it can be formed in various shapes such as an angular shape, of course.

As shown in FIGS. 3A to 3B and 3D , when the heat medium passage part 900 is buried inside the dielectric 210, the heat transfer efficiency to the dielectric 210 is improved and the temperature control is easier. In particular, when the heat medium passage part 900 is made of a metal material, there is an additional advantage that particle accumulation on the lower surface of the dielectric 210 is reduced due to the sputtering effect.

In conclusion, according to the present invention, the temperature of the dielectric 210 can be controlled by flowing the heat medium along the heat medium passage part 900 . Since the present invention does not heat the dielectric 210 by an electric heater method, problems such as noise, arcing, and overheating do not occur due to plasma, so heating or cooling of the dielectric 210 by a heat medium is possible during the process, and accordingly Accordingly, when the dielectric 210 or the shield member 230 is present, the temperature of the shield member 230 may be maintained at a temperature optimized for the substrate processing process without generating particles.

In particular, when a process is performed by applying relatively low power to the antenna unit 500 (eg, SD process (source drain process)), as low power is applied to the antenna unit 500, the dielectric 210 Since the temperature is relatively low and particles are easily generated in the dielectric 210 or the shield member 230, the necessity of heating the dielectric 210 through a heater is high, and the dielectric 210 through a heat medium as in the present invention A temperature control method can be applied more usefully.

Through the above configuration, the induction electric field plasma processing apparatus according to the present invention can precisely control the plasma density for each plasma control area of the processing space (S), thereby securing the uniformity of the plasma density, and for each temperature control area There is an advantage that temperature control of the dielectric 210 can also be performed together.

On the other hand, the induction electric field plasma processing apparatus according to the second embodiment of the present invention forms a flow path 702 through which a heating medium flows for temperature control of the dielectric 210 and controls the plasma density in the processing space by region. A plurality of metal passage parts 700 may be included.

The inductive electric field plasma processing apparatus according to the second embodiment controls the density of plasma in a processing space for each area using a plurality of metal passage parts 700 to secure uniformity of the plasma density and to adjust the temperature of the dielectric 210. Can be controlled by area.//

That is, since the present invention includes a plurality of metal passage parts 700 and can control the temperature of the dielectric 210 using a heat medium rather than an electric resistance heater, temperature control of the dielectric 210 is required in the process. In this case, the temperature control of the dielectric 210 can be precisely controlled for each region along with the plasma uniformity control, and the temperature can be controlled even during substrate processing without problems affecting plasma noise or plasma in the processing space.

The plurality of metal passage parts 700 are installed on the upper surface of the dielectric assembly 200 for each region, and a passage 702 through which the heat medium flows is formed, and a metal material, in particular, does not block the magnetic field caused by the antenna part 500. It may be formed in various shapes and patterns with a configuration made of a non-paramagnetic material (eg, Cu material).

On the other hand, as shown in FIGS. 7, 8B, 10 and 11, the dielectric assembly 200 includes a plurality of dielectrics 210 divided in correspondence with each region, rather than a single dielectric 210. In this case, each of the metal passage parts 700 may be installed on the upper surface of the dielectric 210 in various ways.

For example, it is also possible that one metal passage part 700 is installed to correspond to each dielectric 210 or a plurality of metal passage parts 700 are installed to correspond to one dielectric 210 .

Specifically, as shown in FIGS. 7, 8B, 10 and 11 , the dielectric assembly 200 is divided into a grid pattern (3×3 matrix form) of a N×M matrix form, and a plurality of dielectrics 210 ), at least two metal passage parts 700 may be installed to correspond to at least one dielectric 210 .

As another example, it is also possible that one metal passage part 700 is installed across a plurality of dielectrics 210 . At this time, when the metal passage part 700 passes into the neighboring dielectric 210, it is preferable that the metal passage part 700 and the support frame 220 are installed in a state of being insulated from each other or not in contact with each other.

In addition, as shown in FIGS. 7, 8B, 10, and 11 , each metal passage part 700 may be formed in a different pattern for each installation area and may be arranged at different densities.

For example, as shown in FIG. 7 , the four metal passage parts 700 installed in the region corresponding to the apex of the dielectric assembly 200 are installed in a first pattern shape, and the dielectric assembly 200 The four metal passage parts 700 installed in the area corresponding to the sides are installed in a second pattern shape, and the one metal passage part 700 installed in the central area of the dielectric assembly 200 has a third pattern shape. can be installed as

In addition, at least one of the plurality of metal passage parts 700 may form a closed loop pattern.

More specifically, as shown in FIG. 10, each pattern of the plurality of metal passage parts 700 forms an open-loop, or as shown in FIG. 11, each All of the patterns can form a closed-loop, and as shown in FIG. 7, some of the patterns of the plurality of metal flow passages 700 form a closed-loop and the rest of the patterns form an open-loop. Of course it is possible.

That is, the metal passage part 700 can be installed in various locations and in various shapes as long as the temperature of the dielectric 210 can be controlled using the flow of a heating medium, and can be made of a single member or a combination of a plurality of members. can be configured through

For example, as shown in FIG. 10 , each of the plurality of metal passage parts 700 may be formed in various patterns. Since the flow of the heating medium (inlet and outlet) must be formed in the metal passage part 700, it is preferable to have an open loop pattern as shown in FIG. 10, but it is also possible to form a closed loop pattern as shown in FIG. 11 , It is also possible to form a closed loop in a pattern by connecting the open portion (opening portion) of the open loop pattern with a separate conductor (auxiliary connecting member 708 to be described later).

Meanwhile, at least two of the plurality of metal passage parts 700 may be installed to fluidly interlock with each other to form a common temperature control region.

When at least two of the plurality of metal passage parts 700 are in fluid communication, in addition to the fact that a temperature control region capable of temperature control for each region can be formed, a structure for the inlet and outlet of the heating medium has the advantage of simplifying

For example, as shown in FIG. 10 , the plurality of metal passage parts 700 may form three temperature control regions L, M, and N. Here, the metal passage units 700 belonging to each of the temperature control regions L, M, and N are installed to be in fluid communication with each other. Fluid communication between the metal passage units 700 may be implemented in various ways using a separate connection passage (not shown).

At this time, the induction electric field plasma processing apparatus according to the present invention is provided with one or more inlets through which the heat medium flows into the metal passage part 700 and one or more outlets through which the heat medium flows out from the metal passage part 700. In the present invention, the dielectric 210, the metal flow path unit 700, or a temperature sensor unit (not shown) for sensing the temperature of the heating medium and a temperature value monitored through the temperature sensor unit are used to determine the temperature of the heating medium flowing through the inlet. It may include a control unit for controlling.

By installing at least some of the plurality of metal passage parts 700 in fluid communication with each other, the plurality of metal passage parts 700 can be grouped into a plurality of groups (a plurality of temperature control regions) in fluid communication with each other, The temperature of the fluid flowing into the metal passage part 700 existing in the grouped temperature control area can be controlled through the control unit.

In one embodiment, as shown in FIGS. 5 and 6 , the metal passage part 700 may include a metal pipe part 710 in which a passage 702 through which a heating medium flows is formed, and has a cross-sectional shape. It may be formed in various shapes such as circular or prismatic.

The metal pipe part 710 has a configuration in which a flow path 702 for a heating medium is formed therein, and may be made of a paramagnetic metal material. It is preferable to install in an open loop pattern such as 10. At this time, in the metal pipe part 710, the inlet 704 of the heating medium may be formed at one end and the outlet 706 of the heating medium may be formed at the other end.

Even when the flow path 702 is formed in an open loop pattern, the metal flow path portion 700 itself can form an electrical closed loop pattern for plasma control to be described later.

As an example, as shown in FIG. 8B, the induction electric field plasma processing apparatus according to the present invention further includes an auxiliary connection member 708 electrically connecting the open part of the open loop pattern of the metal passage part 700. can include

The auxiliary connection member 708 may be made of the same metal material as the metal passage part 700, and the metal passage part 700, in particular, the metal pipe part 710 and the auxiliary connection member 708 form a closed loop pattern. It may be installed in the open part (opening part) of the metal passage part 700 made of an open loop pattern so as to achieve.

Through this, while the heat medium flows in and out smoothly through the inlet 704 and the outlet 706 of the metal passage part 700, the pattern of the metal passage part 700 can be formed in more various ways, including a closed loop pattern, which will be described later. There is an advantage that the plasma density control to be performed more easily.

In this respect, when the metal passage part 700 is shown as a closed loop pattern in FIGS. 7 and 8B to 11 of the present invention, this means that the flow passage 702 inside the metal passage part 700 itself forms a closed loop. It should be understood that the inlet 704 and the outlet 706 of the metal flow passage 700, which are not formed, are connected by the above-described auxiliary connecting member 708 to form a closed loop pattern.

For example, when the cross-sectional shape of the metal tube part 710 is circular as shown in FIG. A thermal diffusion block 720 for diffusion may be further included.

The thermal diffusion block 720 is interposed between the metal pipe part 710 and the dielectric material 210 for thermal diffusion from the metal pipe part 710 to the dielectric 210, and various configurations are possible.

As shown in FIG. 5, the thermal diffusion block 720 may be installed on the lower side of the metal pipe 710, but is not limited to the lower side of the metal pipe 710, and the metal pipe 710 and the dielectric 210 It is also possible to be installed so as to be in contact with at least some of the side surfaces such as the upper, side and lower sides of the metal pipe part 710 if it can promote heat transfer between them.

The thermal diffusion block 720 is preferably installed along the metal pipe part 710, but does not necessarily have to be installed in the same pattern. That is, as shown in FIG. 11 , the thermal diffusion block 720 may extend to an area where the metal pipe part 710 is not installed and be installed in various patterns (eg, a closed loop pattern). That is, if the metal pipe part 710 is installed to overlap at least a part of the thermal diffusion block 720, it can be installed in various ways and patterns.

As another example, the metal pipe part 710 may have a angular cross section and be installed to make surface contact with the upper surface of the dielectric 210 .

When the cross section of the metal pipe part 710 forms an angle as shown in FIG. 6, since the metal pipe part 710 itself can make surface contact with the dielectric 210, heat transfer from the heating medium to the dielectric 210 is more easily There is an advantage in that it can be made and a separate thermal diffusion block 720 can be omitted.

In conclusion, according to the present invention, the temperature of the dielectric 210 can be controlled by flowing a heating medium along the metal flow passage 700, particularly the metal pipe 710. Since the present invention does not heat the dielectric 210 by an electric heater method, problems such as noise, arcing, and overheating do not occur due to plasma, and the dielectric 210 can be heated or cooled by a heat medium during the process. Accordingly, when the dielectric 210 or the shield member 230 is present, the temperature of the shield member 230 may be maintained at a temperature optimized for the substrate processing process without generating particles. In addition, according to the present invention, temperature control of the dielectric 210 for each region can be precisely performed by installing the plurality of metal passage parts 700 for each region.

In particular, when a process is performed by applying relatively low power to the antenna unit 500 in the induction field plasma processing apparatus (eg, SD process (Source Drain process)), low power is applied to the antenna unit 500 Since the temperature of the dielectric 210 is formed relatively low according to the temperature of the dielectric 210 and particles are easily generated in the dielectric 210 or the shield member 230, the need for heating the dielectric 210 through a heater is high, and the heat medium as in the present invention The dielectric 210 temperature control method through can be applied more usefully.

Meanwhile, since the metal passage part 700 is made of a paramagnetic metal material, as shown in FIG. 12, an induced current may be formed in the metal passage part 700 by a magnetic field induced by the antenna part 500. And accordingly, the plasma density of the processing space (S) of the process chamber 100 can be varied. That is, the plasma control principle by the metal flow passages 700 is the same as the above-described plasma density control principle by the metal wire portion 600 .

Specifically, as shown in FIG. 8B, each of the plurality of metal flow path parts 700 is in any one state of an electrically floating state, a ground state, and a power application state in which power is applied to both ends. can be installed with

The floating state means a state in which an artificial potential is not set in the metal passage part 700 .

In the floating state, the metal passage part 700 is installed in a floating state in a state in which it is not connected to other components, like the metal passage part 700 in the central part of FIG. Like the unit 700, it can be installed in a floating state while being electrically connected to the second capacitor 730. In this case, the second capacitor 730 may be a variable capacitor.

The grounding state means a state in which the metal passage part 700 is directly or indirectly electrically connected to the grounding point.

In the grounding state, the metal flow passage part 700 is directly grounded like the left side and lower left metal passage part 700 in FIG. 2 may be grounded through capacitor 730. In this case, the second capacitor 730 may be a variable capacitor.

The power-on state means a state in which power is applied to the metal passage part 700 through an external RF power source.

In the power-on state, the metal passage part 700 is connected to the RF power at one end and the second capacitor 730 at the other end, like the upper metal passage part 700 or the lower metal passage part 700 in FIG. 8B. can be grounded through Although not shown, an embodiment in which the other end of the metal passage part 700 is directly grounded without passing through the second capacitor 730 is of course also possible.

Through this, it is possible to variously combine the electrical states of each region of the plurality of metal passage parts 700, and accordingly, the plasma density of each region is controlled, thereby improving the plasma uniformity of the processing space (S).

Meanwhile, plasma density is controlled for each area in which each metal passage part 700 is installed by changing the electrical state of each metal passage part 700, and at least two or more metal passage parts 700 are electrically connected. It is also possible to form a plasma control region (D) common to the metal passage parts 700 electrically connected thereto.

For example, as shown in FIG. 11 , the plurality of metal passage parts 700 may form four plasma control regions O, P, Q, and R. Here, the metal passage parts 700 belonging to each of the plasma control regions O, P, Q, and R are installed to be electrically connected to each other. Electrical connection between the metal flow path units 700 may be implemented in various ways using separate connection conductors (not shown).

That is, at least one of the plurality of metal passage parts 700 is electrically connected to the other metal passage parts 700 to form a common plasma control region D, as shown in FIGS. 9A to 9H . can be connected To this end, the induction electric field plasma processing apparatus according to the present invention further includes a metal connection part 740 electrically connecting at least one of the plurality of metal passage parts 700 to another metal passage part 700. can do.

Hereinafter, with reference to FIGS. 9A to 9H , the electrical connection state of the plurality of metal passage parts 700 will be described in detail. In the case of FIGS. 9A to 9H , for convenience of explanation, the heat medium inlet 704 and the outlet 706 of the metal flow passage 700 are omitted, and only the electrical connection state is briefly shown.

First, FIGS. 9A and 9C are diagrams illustrating an example in which a plurality of metal passage units 700 are installed in a floating state in an electrically connected state. As shown in FIGS. 9A and 9C , the plurality of metal passage parts 700 may be electrically connected to each other, form one plasma control area D, and may be installed in a floating state.

Furthermore, as shown in FIG. 9B, the plurality of metal passage parts 700 are electrically connected to each other to form one plasma control region D, and in a state connected to the second capacitor 730, the second capacitor ( 730) can be installed in a floating state without grounding.

9A to 9C show a case where the metal flow path unit 700 is installed in an electrically floating state, but is additionally grounded in the state of FIGS. 9A to 9C (including a case where it is grounded through the second capacitor 730). ), various electrical connections are possible, such as when power is applied.

In particular, in the case of FIGS. 9A and 9B , it is shown that a plurality of metal passage parts 700 can be electrically connected to each other through metal connection parts 740 to form one closed loop pattern as a whole.

The connecting portion 740 is a configuration for electrically connecting at least two or more metal passage portions 700 to each other, and various configurations are possible.

In particular, the connection part 740 connects the metal passage part 700 to another metal passage part 700 so that the temperature control region and the plasma control region by the plurality of metal passage parts 700 can be defined independently of each other. It is preferably configured to electrically connect to and block fluid communication.

However, if necessary, an embodiment in which the connection member 740 is configured in the form of a metal pipe to enable fluid communication between the electrically connected metal passage parts 700 is also possible, of course.

Next, FIG. 9D is a view showing an example in which the metal passage part 700 is installed in an electrically grounded state.

At this time, of course, the corresponding metal passage part 700 can be grounded while being electrically connected to at least one other metal passage part 700 .

Specifically, as shown in FIGS. 9D and 9E, a plurality of metal passage parts 700 are electrically connected to form one plasma control region D and grounded, or as shown in FIGS. 9F and 9G A plurality of metal flow path portions 700 may form one plasma control region D by electrical connection with each other and be grounded through the second capacitor 730 .

Specifically, in the embodiment of FIGS. 9F and 9G , the induction field plasma processing apparatus includes a plurality of metal flow path units 700 at one end in order to install at least one of the plurality of metal flow path units 700 in a grounded state. It may include a second capacitor 730 connected to at least one of the capacitors and grounded at the other end.

Depending on the initial setting of the second capacitor 730, various potentials based on the ground point may be formed in the metal passage part 700 electrically connected to one end of the second capacitor 730.

The second capacitor 730 may be a variable capacitor, and more specifically, may be a vacuum variable capacitor (VVC).

Also, the other end of the second capacitor 730 may be grounded.

Finally, FIG. 9H is a diagram showing an example of a power application state in which power is applied to both ends of the metal flow path unit 700 .

In FIG. 9H, one end of the metal passage part 700 may be connected to the RF power source and the other end may be grounded.

9A to 9H are only a few examples of possible combinations of the electrical connection state of each metal passage portion 700 and the electrical connection relationship between the plurality of metal passage portions 700, but are not limited to these combinations. no.

As described above, in the present invention, the charging amount (capacitance) of the metal passage part 700 for each region is obtained by variously combining the connection relationship (common, plasma control area) and electrical state between the metal passage parts 700. It is possible to control the plasma field of the corresponding area by doing. Plasma control principle and control method through the metal passage part 700 and its advantages are omitted to the extent that they are the same as those of the metal wire part 600 described above.

In summary, the metal wire parts 600 of the first embodiment can perform only the plasma control function, whereas the plurality of metal passage parts 700 of the second embodiment simply perform only the temperature control function of the dielectric 210, , can perform the plasma control function together.

By the way, referring to FIGS. 10 and 11, the plasma control area (O, P, Q, R in FIG. 11) by the above-described metal flow path unit 700 and the temperature control area (FIG. 11) by the metal flow path unit 700 L, M, N) of 10 can be partitioned (defined) independently of each other. In other words, the plasma control area due to electrical connection between the metal flow passage portions 700 and the temperature control area due to fluid communication between the metal flow passage portions 700 do not need to match each other.

However, when the plasma control regions (O, P, Q, R) and the temperature control regions (L, M, N) are partitioned differently by the plurality of metal passage portions 700, the plurality of metal passage portions 700 ) should be installed to be insulated from each other at the boundary of the plasma control regions (O, P, Q, R) and in fluid communication with each other at the temperature control regions (L, M, N).

In this case, the induction electric field plasma processing apparatus may further include an insulating flow path unit (not shown) which fluidly communicates at least two of the plurality of metal flow path units 700 in a state of being insulated from each other.

The insulating passage part may be installed at the boundary of the plasma control region to maintain insulation between the metal passage parts 700 and at the same time allow fluid to communicate therewith.

On the other hand, as described above, each metal flow path portion 700 may be formed in various patterns, but, like the metal wire portion 600 of the first embodiment, when viewed in relation to the antenna portion 500 from the point of view of plasma control, It is most preferable to be installed so as to form a vertical or inclined plane with the antenna unit 500 to be positioned.

In addition, since the metal passage parts 700 are also made of a metal material and need to be insulated from other members, the inductively coupled plasma processing apparatus according to the present invention is used to insulate the metal passage part 700 from other members. An insulating cover part 800 covering the metal passage part 700 may be further included.

As the insulating cover part 800 covering the metal passage part 700 is installed, there is an effect of preventing heat loss through the upper side together with the insulating effect of the metal passage part 700 .

Through the above configuration, the induction electric field plasma processing apparatus according to the present invention can precisely control the plasma density for each plasma control area of the processing space (S), thereby securing the uniformity of the plasma density, and for each temperature control area There is an advantage in that the temperature control of the dielectric 210 can also be effectively performed together.

Since the above has only been described with respect to some of the preferred embodiments that can be implemented by the present invention, as noted, the scope of the present invention should not be construed as being limited to the above embodiments, and the scope of the present invention described above It will be said that the technical idea and the technical idea together with the root are all included in the scope of the present invention.

100: chamber body 200: dielectric assembly
300: substrate support part 400: gas injection part
500: antenna unit

Claims (25)

a chamber body 100 having an opening formed thereon;
a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210;
a substrate support part 300 installed on the chamber body 100 to support the substrate 10;
a gas injection unit 400 for injecting gas into the processing space (S);
An antenna unit 500 installed inside the dielectric 210 to form an induced electric field in the processing space S,
In order to control the plasma density in the processing space (S) for each region above the dielectric assembly 200, a plurality of metal wire parts 600 positioned on the upper side of the dielectric assembly 200 for each region are further included,
By combining the metal wire parts 600 installed in any one of a floating state, a ground state, and a power applied state in which power is applied, the plasma density in the processing space (S) is measured by the dielectric assembly 200 ) Inductive electric field plasma processing apparatus, characterized in that the control is performed for each upper region. The method of claim 1,
The induction electric field plasma processing apparatus is connected to at least one of the plurality of metal wire parts 600 at one end and grounded at the other end in order to install at least one of the plurality of metal wire parts 600 in the ground state. 1. An induction electric field plasma processing apparatus further comprising a capacitor 630. The method of claim 2,
The first capacitor 630 is a variable capacitor. The method of claim 1,
The inductive electric field plasma processing apparatus, characterized in that the metal wire portion 600 forms a vertical or inclined plane with the antenna portion 500 located directly below. The method of claim 1,
At least one of the plurality of metal wire parts (600) is electrically connected to another metal wire part (600) to form a common plasma control region. The method of claim 5,
At least one of the plurality of metal wire parts 600 forms a closed loop pattern. The method of claim 1,
The induction electric field plasma processing device,
The inductive electric field plasma processing apparatus further comprises a heat medium passage part 900 forming a passage 902 through which a heat medium flows for temperature control of the dielectric 210. The method of claim 7,
The inductive electric field plasma processing apparatus, characterized in that the heat medium passage portion (900) is installed to contact at least a part of the metal wire portion (600). The method of claim 7,
The inductive electric field plasma processing apparatus, characterized in that the heat medium passage portion (900) is installed inside the dielectric (210). The method of claim 7,
The inductive electric field plasma processing apparatus, characterized in that the heat medium passage portion 900 includes a plurality of sub-passage portions 910 installed for each planar region of the dielectric assembly 200. The method of claim 10,
At least two of the plurality of sub-passage portions 910 are in fluid communication with each other to form a common temperature control region. The method of claim 11,
At least one of the plurality of metal wire parts 600 is electrically connected to another metal wire part 600 to form a common plasma control region,
The inductive electric field plasma processing apparatus, characterized in that the plasma control region and the temperature control region are defined independently of each other. a chamber body 100 having an opening formed thereon;
a dielectric assembly 200 including at least one dielectric 210 installed to cover the opening to form a processing space S, and a support frame 220 supporting the dielectric 210;
a substrate support part 300 installed on the chamber body 100 to support the substrate 10;
a gas injection unit 400 for injecting gas into the processing space (S);
An antenna unit 500 installed inside the dielectric 210 to form an induced electric field in the processing space S,
In order to control the plasma density in the processing space (S) and the temperature of the dielectric 210 for each region of the upper surface of the dielectric assembly 200, a flow path 602 through which a heat medium flows is provided, and a region on the upper surface of the dielectric assembly 200 It further includes a plurality of metal passage parts 700 installed separately,
A dielectric assembly ( 200) An inductive electric field plasma processing apparatus characterized in that control is performed for each area of the upper surface. The method of claim 13,
The induction electric field plasma processing device,
In order to install at least one of the plurality of metal passage parts 700 in the ground state, a second capacitor 730 connected to at least one of the plurality of metal passage parts 700 at one end and grounded at the other end An induction electric field plasma processing apparatus comprising a. The method of claim 14,
The second capacitor 730 is a variable capacitor. The method of claim 13,
At least two of the plurality of metal passage parts 700 are in fluid communication with each other to form a common temperature control region. The method of claim 13,
The induction electric field plasma processing device,
The inductive electric field plasma processing apparatus further comprises an insulating flow path unit which fluidly communicates at least two of the plurality of metal flow path units 700 in a state of being insulated from each other. The method of claim 13,
The metal passage part 700 is an inductive electric field plasma processing apparatus, characterized in that it forms a vertical or inclined plane with the antenna part 500 located directly below. The method of claim 13,
At least one of the plurality of metal passage parts 700 is electrically connected to another metal passage part 700 to form a common plasma control region. The method of claim 19
The induction electric field plasma processing device,
An induction electric field plasma processing apparatus further comprising a connection part 740 for electrically connecting at least one of the plurality of metal passage parts 700 to another metal passage part 700 while blocking fluid communication. The method of claim 16
At least one of the plurality of metal passage parts 700 is electrically connected to another metal passage part 700 to form a common plasma control region,
The inductive electric field plasma processing apparatus, characterized in that the temperature control region and the plasma control region are defined independently of each other. The method of claim 13,
The metal passage part 700,
An inductive electric field plasma processing apparatus comprising a metal tube portion 710 in which the flow path 702 is formed. The method of claim 22
The metal pipe part 710 has an angular cross section and is installed to make surface contact with the upper surface of the dielectric 210. The method of claim 22
The metal passage part 700,
The inductive electric plasma processing apparatus further comprises a thermal diffusion block 720 interposed between the metal pipe part 710 and the dielectric 210 for thermal diffusion to the dielectric 210. The method of claim 13,
The metal passage part 700 forms an open loop pattern in which an inlet 704 through which a heating medium flows in and an outlet 706 through which a heating medium flows out are formed at both ends, respectively.
The induction field plasma processing device further comprises an auxiliary connecting member 708 electrically connecting the open portion of the open loop pattern.

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