WO2016129437A1 - Plasma processing device - Google Patents

Plasma processing device Download PDF

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Publication number
WO2016129437A1
WO2016129437A1 PCT/JP2016/052933 JP2016052933W WO2016129437A1 WO 2016129437 A1 WO2016129437 A1 WO 2016129437A1 JP 2016052933 W JP2016052933 W JP 2016052933W WO 2016129437 A1 WO2016129437 A1 WO 2016129437A1
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Prior art keywords
antenna
sub
frequency
plasma
frequency antenna
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PCT/JP2016/052933
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French (fr)
Japanese (ja)
Inventor
英治 高橋
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日新電機株式会社
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Application filed by 日新電機株式会社 filed Critical 日新電機株式会社
Priority to KR1020177021556A priority Critical patent/KR102020815B1/en
Priority to CN201680009474.XA priority patent/CN107251657B/en
Publication of WO2016129437A1 publication Critical patent/WO2016129437A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention generates a plasma (inductively coupled plasma, abbreviated ICP) by generating an induction electric field in a vacuum vessel by flowing a high-frequency current from a high-frequency power source to a high-frequency antenna, and using the plasma on a substrate, for example,
  • ICP inductively coupled plasma
  • the present invention relates to an inductively coupled plasma processing apparatus for performing processes such as film formation by plasma CVD, etching, ashing, and sputtering.
  • Patent Document 1 As an example of the inductively coupled plasma processing apparatus, in Patent Document 1, a flat high frequency antenna is attached to an opening of a vacuum vessel via an insulating frame, and a high frequency power source is connected between one end and the other end of the high frequency antenna.
  • a plasma processing apparatus is described in which a high-frequency current is supplied by supplying electric power, plasma is generated by an induced electric field generated thereby, and a substrate is processed using the plasma.
  • the impedance (particularly inductance) of the high frequency antenna becomes large and the high frequency current hardly flows. Since the induced electric field to be generated is suppressed, there is a problem that it is difficult to efficiently generate inductively coupled plasma.
  • the main object of the present invention is to provide a plasma processing apparatus capable of efficiently generating inductively coupled plasma even when a high-frequency antenna is lengthened.
  • the plasma processing apparatus generates an induction electric field in a vacuum vessel by flowing a high-frequency current from a high-frequency power source to a high-frequency antenna disposed in a vacuum vessel that is evacuated and into which gas is introduced.
  • An inductively coupled plasma processing apparatus that generates and processes a substrate using the plasma, and is a sub-antenna disposed along the high-frequency antenna in the vacuum vessel, and the vicinity of both ends thereof is insulated
  • a sub-antenna that is supported from the vacuum vessel via an object and is placed in an electrically floating state, and an insulating cover that collectively covers the high-frequency antenna and the sub-antenna in a portion located in the vacuum vessel It is characterized by having.
  • an induced electromotive force is generated in the sub-antenna by flowing a high-frequency current through the high-frequency antenna, so that even if the sub-antenna is placed in an electrically floating state, mainly near both ends of the sub-antenna
  • Inductive current flows through the sub-antenna via the capacitance that is naturally present in the insulator portion.
  • the induction electric field caused by the induction current flowing through the sub-antenna and the induction electric field caused by the high frequency current flowing through the high-frequency antenna can cooperate to efficiently generate inductively coupled plasma. Accordingly, inductively coupled plasma can be efficiently generated even when the high frequency antenna is lengthened.
  • the distance between the surface of the high frequency antenna and the surface of the sub antenna may be 25 mm or less (excluding 0).
  • the high frequency antenna and the sub antenna may be arranged in the insulating cover with a space.
  • an induced electromotive force is generated in the sub-antenna by flowing a high-frequency current through the high-frequency antenna, so that even if the sub-antenna is placed in an electrically floating state, mainly the sub-antenna is An induced current flows through the sub-antenna via the capacitance that is naturally present in the insulator portion near both ends.
  • the induction electric field caused by the induction current flowing through the sub-antenna and the induction electric field caused by the high frequency current flowing through the high-frequency antenna can cooperate to efficiently generate inductively coupled plasma. Accordingly, inductively coupled plasma can be efficiently generated even when the high frequency antenna is lengthened.
  • the high-frequency antenna and the sub-antenna located in the vacuum container are collectively covered with an insulating cover, it is possible to prevent plasma from being generated between the high-frequency antenna and the sub-antenna. Even when plasma is generated, it is possible to ensure the electrical floating state of the sub-antenna. Furthermore, since charged particles in the plasma can be prevented from entering the high-frequency antenna and the sub-antenna, an increase in the plasma potential due to the incidence of plasma on both antennas can be suppressed, and both antennas can be connected to the plasma. It is possible to suppress the occurrence of metal contamination (metal contamination) on the plasma and the substrate by being sputtered by the charged particles therein.
  • metal contamination metal contamination
  • the following further effect can be obtained. That is, since the distance between the surface of the high-frequency antenna and the surface of the sub-antenna is 25 mm or less (excluding 0), both antennas are sufficiently close to each other, The effect of efficiently generating inductively coupled plasma can be further enhanced by cooperation with an induction electric field generated by a high-frequency current flowing through the high-frequency antenna. Furthermore, even if gas enters the insulation cover, the distance between the two antennas is small and the distance of electron movement is short, so that plasma is prevented from being generated between the two antennas, and the sub-antenna is in an electrically floating state. Can be made more reliable.
  • the following further effects can be obtained. That is, since the high-frequency antenna and the sub-antenna are disposed in the insulating cover via a space, the presence of the space can suppress an increase in potential on the surface of the insulating cover, thereby suppressing an increase in plasma potential. .
  • FIG. 3 is an equivalent circuit diagram around an antenna for explaining the reason why the result of FIG. 2 is obtained.
  • FIG. 1 shows an embodiment of a plasma processing apparatus according to the present invention.
  • This plasma processing apparatus generates an induction electric field in the vacuum vessel 2 by flowing a high-frequency current I R from a high-frequency power source 26 to a high-frequency antenna 18 disposed in the vacuum vessel 2 that is evacuated and into which gas 8 is introduced.
  • a plasma (inductively coupled plasma) 30 is generated, and the substrate 10 is processed using the plasma 30.
  • substrate 10 is a board
  • FPD flat panel displays
  • Examples of the treatment applied to the substrate 10 include film formation by plasma CVD, etching, ashing, and sputtering.
  • This plasma processing apparatus is also called a plasma CVD apparatus when a film is formed by plasma CVD, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed.
  • the vacuum vessel 2 is a metal vessel, for example, and the inside thereof is evacuated by the evacuation device 4.
  • the vacuum vessel 2 is electrically grounded in this example.
  • the gas 8 is introduced into the vacuum vessel 2 through, for example, a flow rate regulator (not shown) and a plurality of gas inlets 6 arranged in a direction along the high-frequency antenna 18.
  • the gas 8 may be in accordance with the content of processing performed on the substrate 10.
  • the gas 8 is a source gas or a gas obtained by diluting it with a diluent gas (for example, H 2 ). More specifically, when the source gas is SiH 4 , the Si film is formed; when SiH 4 + NH 3 is used, the SiN film is formed; when SiH 4 + O 2 is used, the SiO 2 film is formed; and when SiF 4 + N 2 is used, the SiN film is formed.
  • F film fluorinated silicon nitride film
  • a substrate holder 12 that holds the substrate 10 is provided in the vacuum vessel 2.
  • a bias voltage may be applied to the substrate holder 12 from the bias power supply 14.
  • the bias voltage is, for example, a negative DC voltage, a negative pulse voltage, or the like, but is not limited thereto.
  • the energy when positive ions in the plasma 30 are incident on the substrate 10 can be controlled to control the crystallinity of the film formed on the surface of the substrate 10.
  • a heater for heating the substrate 10 may be provided in the substrate holder 12.
  • the high-frequency antenna 18 is a linear antenna, and is disposed above the substrate 10 in the vacuum vessel 2 so as to be along the surface of the substrate 10 (for example, substantially parallel to the surface of the substrate 10). ing. Near both ends of the high-frequency antenna 18, two openings 16 provided on opposite wall surfaces of the vacuum vessel 2 are respectively penetrated. Each opening 16 is provided with an insulator (for example, an insulating flange) 22 so as to hermetically close each opening 16. The vicinity of both ends of the high-frequency antenna 18 penetrates the insulators 22 and is supported from the vacuum vessel 2 via the insulators 22.
  • the distance from the high-frequency antenna 18 to the substrate holder 12 is, for example, about 50 mm to 250 mm, and more specifically 100 mm as an example, but is not limited thereto.
  • a vacuum seal packing for example, an O-ring
  • the high frequency antenna 18, a high-frequency current I R is flowed from the high frequency power supply 26 via a matching circuit 28.
  • the frequency of the high-frequency current I R is, for example, a general 13.56 MHz, but is not limited thereto.
  • a secondary antenna 20 is disposed in the vacuum container 2 along the high-frequency antenna 18 (for example, substantially parallel).
  • the sub-antenna 20 also has a linear shape in accordance with the high-frequency antenna 18.
  • the sub-antenna 20 may be about the same length as the high-frequency antenna 18, for example.
  • the sub-antenna 20 is supported in the vicinity of both ends from the vacuum vessel 2 via the insulator 22 and is placed in an electrically floating state (floating state).
  • the position of the sub antenna 20 with respect to the high frequency antenna 18 may be either the top, bottom, left or right of the high frequency antenna 18, it is arranged above the high frequency antenna 18, that is, on the side opposite to the substrate 10 with respect to the high frequency antenna as in this example. It is preferable to do this. By doing so, the high frequency antenna 18 that mainly generates the plasma 30 by flowing the high frequency current I R can be brought closer to the substrate 10, so that the plasma 30 can be used more efficiently for the processing of the substrate 10.
  • the insulator 22 may be divided into those that support the high-frequency antenna 18 and those that support the sub-antenna 20.
  • the material of the high frequency antenna 18 and the sub antenna 20 is, for example, copper, aluminum, alloys thereof, stainless steel, etc., but is not limited thereto.
  • the high frequency antenna 18 may be made hollow, and a coolant such as cooling water may be passed through it to cool the high frequency antenna 18.
  • a coolant such as cooling water may be passed through it to cool the high frequency antenna 18.
  • both antennas 18 and 20 are preferable because impedance (particularly inductance) decreases.
  • the diameters of both antennas 18 and 20 may be 12 mm or more.
  • the diameters of both antennas 18 and 20 may be the same, or the diameter of the high-frequency antenna 18 may be larger than the diameter of the sub-antenna 20. In the latter case, the impedance (particularly the inductance) of the high-frequency antenna 18 that is the main antenna is further reduced, so that the high-frequency current I R easily flows through the high-frequency antenna 18.
  • the material of the insulator 22 is, for example, ceramics such as alumina, quartz, or engineering plastics such as polyphenine sulfide (PPS) or polyether ether ketone (PEEK), but is not limited thereto.
  • ceramics such as alumina, quartz, or engineering plastics such as polyphenine sulfide (PPS) or polyether ether ketone (PEEK), but is not limited thereto.
  • PPS polyphenine sulfide
  • PEEK polyether ether ketone
  • This plasma processing apparatus further covers a portion of the high-frequency antenna 18 and the sub-antenna 20 located in the vacuum vessel 2 and is provided with a cylindrical insulating cover 24 made of an insulating material. It is not necessary to seal between the both ends of the insulating cover 24 and the vacuum vessel 2. This is because even if the gas 8 enters the space in the insulating cover 24, the space is small and the electron moving distance is short, so that plasma is not normally generated in the space.
  • the material of the insulating cover 24 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon or the like, but is not limited thereto.
  • a high-frequency magnetic field is generated around the high-frequency antenna 18 by flowing a high-frequency current I R through the high-frequency antenna 18, thereby generating an induction electric field in a direction opposite to the high-frequency current I R. Due to this induction electric field, electrons are accelerated in the vacuum chamber 2 to ionize the gas 8 in the vicinity of the high-frequency antenna 18 to generate plasma (ie, inductively coupled plasma) 30 in the vicinity of the high-frequency antenna 18.
  • the plasma 30 diffuses to the vicinity of the substrate 10, and the plasma 10 can be subjected to the processing described above.
  • an induced electromotive force is generated in the sub-antenna 20 by flowing a high-frequency current I R through the high-frequency antenna 18, so that even if the sub-antenna 20 is placed in an electrically floating state,
  • An induced current (see the induced current I 2 in FIG. 3C) flows through the sub-antenna 20 mainly through electrostatic capacity that naturally exists in the insulator 22 portion near both ends of the sub-antenna 20.
  • the induction electric field due to the induced current flowing through the auxiliary antenna 20 and cooperate with the induction electric field generated by the high frequency current I R flowing through the high frequency antenna 18, the inductively coupled plasma 30 can be efficiently generated.
  • the inductively coupled plasma 30 can be generated efficiently. As a result, it becomes easy to increase the size of the substrate 10 by elongating the high-frequency antenna 18.
  • the present invention can be applied to a case where the length of the high-frequency antenna 18 exceeds 2000 mm.
  • both antennas 18 and 20 can be prevented from being sputtered by charged particles in the plasma 30 and causing metal contamination (metal contamination) to the plasma 30 and the substrate 10.
  • the lengths of the high-frequency antenna 18 and the sub-antenna 20 are both 1340 mm, the distance D between the surfaces of the antennas 18 and 20 is 25 mm, and the gas 8 is SiF 4 (tetrafluoride).
  • the mixed gas used in the silicon gas) and N 2 gas (nitrogen gas) by supplying a high-frequency current I R from the high-frequency power source 26 13 ⁇ 56 MHz high frequency antenna 18, the inductive coupling into the vacuum chamber 2 by the induced electric field described above
  • a mold plasma 30 was generated to form a SiN: F film (fluorinated silicon nitride film) on the substrate 10.
  • Example (C) An example of the result of measuring the deposition rate of the SiN: F film is shown as Example (C) in FIG.
  • An equivalent circuit around the antenna in this embodiment is shown in FIG.
  • the matching circuit 28 (see FIG. 1) is not shown in FIG.
  • Comparative Example 1 the measurement result of the film formation speed when the sub-antenna 20 is removed is shown as (A) Comparative Example 1 in FIG. An equivalent circuit around the antenna of Comparative Example 1 is shown in FIG. Since this comparative example 1 does not have the sub-antenna 20, it corresponds to the conventional technique similar to the technique described in Patent Document 1 described above. Furthermore, the result of measuring the film forming speed when both ends of the sub-antenna 20 are grounded is shown as (B) Comparative Example 2 in FIG. An equivalent circuit around the antenna of Comparative Example 2 is shown in FIG. In Comparative Examples 1 and 2, the film forming conditions were the same as those in the above example except for the sub antenna 20.
  • Comparative Example 1 As shown in FIG. 2, the film formation rate of Comparative Example 1 was the lowest. Further, the film formation rate of Comparative Example 2 was increased by about 10% compared to Comparative Example 1. On the other hand, the film formation rate of the example greatly increased as compared with Comparative Examples 1 and 2.
  • the antenna is only the high-frequency antenna 18, and as described above, the impedance Z 1 , particularly the self-inductance L 1 , increases as the length increases, and the high-frequency current increases. Since I R hardly flows, the density of the plasma 30 is small, thus the film formation rate is also small.
  • the insulator 22 (see FIG. 1) mainly near both ends of the sub antenna 20 even if the sub antenna 20 is placed in an electrically floating state.
  • the capacitance C 2 naturally exists in the portion (this means that the capacitor C 2 exists even without a capacitor).
  • Both capacitances C 2 are connected in series between both ends of the sub-antenna 20 via a ground circuit such as a metal vacuum vessel 2 and form a closed circuit together with the sub-antenna 20.
  • the values of both capacitances C 2 may be considered to be substantially equal to each other, and a combined capacitance C 0 of two capacitances C 2 connected in series with each other is expressed by the following equation. .
  • ⁇ is an angular frequency of the high-frequency current I R
  • M is a mutual inductance between the antennas 18 and 20
  • j is an imaginary unit.
  • the resistance of the sub-antenna 20 is usually sufficiently smaller than the reactance due to its self-inductance L 2 , when the impedance Z 2 of the closed circuit including the sub-antenna 20 is approximately expressed using the reactance, the induced electromotive force is Due to V 2 , an induced current I 2 represented by the following formula flows through the sub-antenna 20.
  • C 0 is the combined capacitance shown in Equation 1.
  • the directions of the high-frequency current I R and the induced current I 2 shown in FIG. 3 are positive.
  • I 2 V 2 / Z 2 ⁇ -j ⁇ MI R / j ( ⁇ L 2 -1 / ⁇ C 0 ) ⁇ - ⁇ MI R / ( ⁇ L 2 -1 / ⁇ C 0 )
  • the capacitance C 2 is usually small because it is a capacitance that naturally exists mainly in the insulator 22 portions near both ends of the sub-antenna 20 as described above. Therefore, the combined capacitance C 0 is also small. small. Accordingly, the reactance ( ⁇ L 2 ⁇ 1 / ⁇ C 0 ) in the above equation 3 becomes a negative value, and as a result, the induced current I 2 becomes a positive value. That is, as shown in FIG. 3C, the sub-antenna 20 is supplied with an induction current I 2 having the same direction as the high-frequency current I R flowing through the high-frequency antenna 18.
  • the inductance constituting the impedance Z 1 of the high-frequency antenna 18 may be somewhat larger than the self-inductance L 1 in consideration of the mutual inductance M 1.
  • the high-frequency magnetic field generated by the high-frequency current I R flowing through the high-frequency antenna 18 and the high-frequency magnetic field generated by the induction current I 2 flowing through the sub-antenna 20 are in the same direction, and the high-frequency current I R flowing through the high-frequency antenna 18 Since the induced electric field acts so that the induced electric field caused by the induced current I 2 flowing through the sub-antenna 20 is enhanced, the inductively coupled plasma 30 can be generated efficiently. As a result of integrating the actions as described above, it is considered that the density of the plasma 30 is greatly increased, and the film forming rate is greatly increased as compared with Comparative Examples 1 and 2.
  • the electrostatic capacity C 2 that naturally exists in the insulator 22 near the both ends of the sub-antenna 20 placed in an electrically floating state is used well, and together with the sub-antenna 20 There is no need to provide a capacitor for forming a closed circuit. Therefore, compared with the case where a capacitor is provided, it is possible to reduce the number of parts and the assembly work process.
  • the distance D between the surface of the high-frequency antenna 18 and the surface of the sub-antenna 20 is preferably set to 25 mm or less (not including 0).
  • both antennas 18 and 20 are sufficiently close to each other, and the inductive coupling is caused by the cooperation between the induced electric field caused by the induced current I 2 flowing through the sub-antenna 20 and the induced electric field caused by the high frequency current I R flowing through the high-frequency antenna 18.
  • the above-described effect of efficiently generating the mold plasma 30 can be further enhanced.
  • the distance between the antennas 18 and 20 is small and the distance of movement of electrons is short, so that plasma is prevented from being generated between the antennas 18 and 20.
  • the electric floating state of the sub antenna 20 can be made more reliable.
  • a portion other than both antennas 18 and 20 in the insulating cover 24 may be filled with an insulator such as resin. By doing so, it is possible to more reliably prevent plasma from being generated in the insulating cover 24.
  • the high frequency antenna 18 and the sub antenna 20 may be arranged in the insulating cover 24 via the space 23 as in this embodiment.
  • the presence of the space 23 can suppress an increase in the potential of the surface of the insulating cover 24, thereby suppressing an increase in the potential of the plasma 30.
  • the distance D between the high-frequency antenna 18 and the sub-antenna 20 may be changed in the longitudinal direction of the high-frequency antenna 18 within the above range, for example, within a range of 5 mm to 25 mm. good. By doing so, it is possible to control the density distribution of the film formed on the substrate 10 by controlling the density distribution of the plasma 30 in the longitudinal direction of the high-frequency antenna 18.
  • the high-frequency antenna 18 and the sub-antenna 20 covered by the insulating cover 24 may be used as one antenna unit, and a plurality of antenna units may be arranged in a direction along the surface of the substrate 10 according to the size of the substrate 10 or the like. . By doing so, it is possible to generate a plasma 30 with a larger area and to process the larger substrate 10.
  • Vacuum container 8 Gas 10 Substrate 18 High frequency antenna 20 Sub antenna 22 Insulator 24 Insulation cover 26 High frequency power supply 30 Plasma

Abstract

Provided is a plasma processing device that makes it possible to efficiently generate inductively coupled plasma even when the length of a high-frequency antenna is increased. The plasma processing device is provided with a high-frequency antenna (18) arranged within a vacuum chamber (2) that is evacuated by a vacuum and that has a gas (8) introduced thereinto. The plasma processing device is additionally provided with: an auxiliary antenna (20) that is arranged along the high-frequency antenna (18) within the vacuum chamber (2), that is supported in the vicinity of both ends thereof from the vacuum chamber (2) via an insulator (22), and that is placed in an electrically floating state; and an insulating cover (24) for integrally covering the parts of both antennas (18) and (20) that are positioned within the vacuum chamber (2).

Description

プラズマ処理装置Plasma processing equipment
  この発明は、高周波アンテナに高周波電源から高周波電流を流すことによって真空容器内に誘導電界を発生させてプラズマ（誘導結合型のプラズマ。略称ＩＣＰ）を生成し、当該プラズマを用いて基板に、例えばプラズマＣＶＤ法による膜形成、エッチング、アッシング、スパッタリング等の処理を施す誘導結合型のプラズマ処理装置に関する。 The present invention generates a plasma (inductively coupled plasma, abbreviated ICP) by generating an induction electric field in a vacuum vessel by flowing a high-frequency current from a high-frequency power source to a high-frequency antenna, and using the plasma on a substrate, for example, The present invention relates to an inductively coupled plasma processing apparatus for performing processes such as film formation by plasma CVD, etching, ashing, and sputtering.
  誘導結合型のプラズマ処理装置の一例として、特許文献１には、平板状の高周波アンテナを真空容器の開口部に絶縁枠を介して取り付け、当該高周波アンテナの一端と他端間に高周波電源から高周波電力を供給して高周波電流を流し、それによって発生する誘導電界によってプラズマを生成し、当該プラズマを用いて基板に処理を施すプラズマ処理装置が記載されている。 As an example of the inductively coupled plasma processing apparatus, in Patent Document 1, a flat high frequency antenna is attached to an opening of a vacuum vessel via an insulating frame, and a high frequency power source is connected between one end and the other end of the high frequency antenna. A plasma processing apparatus is described in which a high-frequency current is supplied by supplying electric power, plasma is generated by an induced electric field generated thereby, and a substrate is processed using the plasma.
国際公開第ＷＯ  ２００９／１４２０１６号パンフレット（段落００２４－００２６、図１）International Publication No. WO ／ 2009/142016 (paragraphs 0024-0026, FIG. 1)
  上記従来のプラズマ処理装置においては、大型の基板に対応する等のために高周波アンテナを長くすると、当該高周波アンテナのインピーダンス（特にインダクタンス）が大きくなって高周波電流が流れにくくなり、それによって高周波アンテナが発生させる誘導電界が抑制されるため、誘導結合型のプラズマを効率良く発生させることが困難になるという課題がある。 In the above-described conventional plasma processing apparatus, when the high frequency antenna is lengthened to cope with a large substrate, the impedance (particularly inductance) of the high frequency antenna becomes large and the high frequency current hardly flows. Since the induced electric field to be generated is suppressed, there is a problem that it is difficult to efficiently generate inductively coupled plasma.
  そこでこの発明は、高周波アンテナを長くする場合でも誘導結合型のプラズマを効率良く発生させることができるプラズマ処理装置を提供することを主たる目的としている。 Therefore, the main object of the present invention is to provide a plasma processing apparatus capable of efficiently generating inductively coupled plasma even when a high-frequency antenna is lengthened.
  この発明に係るプラズマ処理装置は、真空排気されかつガスが導入される真空容器内に配置された高周波アンテナに高周波電源から高周波電流を流すことによって当該真空容器内に誘導電界を発生させてプラズマを生成し、当該プラズマを用いて基板に処理を施す誘導結合型のプラズマ処理装置であって、前記真空容器内に前記高周波アンテナに沿って配置された副アンテナであって、その両端部付近が絶縁物を介して前記真空容器から支持されていて、電気的にフローティング状態に置かれている副アンテナと、前記真空容器内に位置する部分の前記高周波アンテナおよび前記副アンテナを一括して覆う絶縁カバーとを備えていることを特徴としている。 The plasma processing apparatus according to the present invention generates an induction electric field in a vacuum vessel by flowing a high-frequency current from a high-frequency power source to a high-frequency antenna disposed in a vacuum vessel that is evacuated and into which gas is introduced. An inductively coupled plasma processing apparatus that generates and processes a substrate using the plasma, and is a sub-antenna disposed along the high-frequency antenna in the vacuum vessel, and the vicinity of both ends thereof is insulated A sub-antenna that is supported from the vacuum vessel via an object and is placed in an electrically floating state, and an insulating cover that collectively covers the high-frequency antenna and the sub-antenna in a portion located in the vacuum vessel It is characterized by having.
  このプラズマ処理装置によれば、高周波アンテナに高周波電流を流すことによって副アンテナに誘導起電力が生じ、それによって、副アンテナを電気的にフローティング状態に置いていても、主として副アンテナの両端部付近の絶縁物部分に自然に存在する静電容量を経由して副アンテナに誘導電流が流れる。この副アンテナに流れる誘導電流による誘導電界と、高周波アンテナに流れる高周波電流による誘導電界とが協働して、誘導結合型のプラズマを効率良く発生させることができる。従って、高周波アンテナを長くする場合でも誘導結合型のプラズマを効率良く発生させることができる。 According to this plasma processing apparatus, an induced electromotive force is generated in the sub-antenna by flowing a high-frequency current through the high-frequency antenna, so that even if the sub-antenna is placed in an electrically floating state, mainly near both ends of the sub-antenna Inductive current flows through the sub-antenna via the capacitance that is naturally present in the insulator portion. The induction electric field caused by the induction current flowing through the sub-antenna and the induction electric field caused by the high frequency current flowing through the high-frequency antenna can cooperate to efficiently generate inductively coupled plasma. Accordingly, inductively coupled plasma can be efficiently generated even when the high frequency antenna is lengthened.
  前記高周波アンテナの表面と前記副アンテナの表面との間の距離を２５ｍｍ以下（０は含まない）にしても良い。 距離 The distance between the surface of the high frequency antenna and the surface of the sub antenna may be 25 mm or less (excluding 0).
  前記高周波アンテナおよび前記副アンテナは、前記絶縁カバー内に空間を介して配置されていても良い。 The high frequency antenna and the sub antenna may be arranged in the insulating cover with a space.
  請求項１に記載の発明によれば、高周波アンテナに高周波電流を流すことによって副アンテナに誘導起電力が生じ、それによって、副アンテナを電気的にフローティング状態に置いていても、主として副アンテナの両端部付近の絶縁物部分に自然に存在する静電容量を経由して副アンテナに誘導電流が流れる。この副アンテナに流れる誘導電流による誘導電界と、高周波アンテナに流れる高周波電流による誘導電界とが協働して、誘導結合型のプラズマを効率良く発生させることができる。従って、高周波アンテナを長くする場合でも誘導結合型のプラズマを効率良く発生させることができる。 According to the first aspect of the present invention, an induced electromotive force is generated in the sub-antenna by flowing a high-frequency current through the high-frequency antenna, so that even if the sub-antenna is placed in an electrically floating state, mainly the sub-antenna is An induced current flows through the sub-antenna via the capacitance that is naturally present in the insulator portion near both ends. The induction electric field caused by the induction current flowing through the sub-antenna and the induction electric field caused by the high frequency current flowing through the high-frequency antenna can cooperate to efficiently generate inductively coupled plasma. Accordingly, inductively coupled plasma can be efficiently generated even when the high frequency antenna is lengthened.
  しかも、真空容器内に位置する部分の高周波アンテナおよび副アンテナを一括して絶縁カバーで覆っているので、高周波アンテナと副アンテナとの間にプラズマが発生するのを防止して、真空容器内にプラズマを発生させた時にも、副アンテナの電気的フローティング状態を確保することができる。更に、プラズマ中の荷電粒子が高周波アンテナおよび副アンテナに入射するのを防止することができるので、両アンテナにプラズマが入射することによるプラズマ電位の上昇を抑制することができると共に、両アンテナがプラズマ中の荷電粒子によってスパッタされてプラズマおよび基板に対して金属汚染（メタルコンタミネーション）が生じるのを抑制することができる。 Moreover, since the high-frequency antenna and the sub-antenna located in the vacuum container are collectively covered with an insulating cover, it is possible to prevent plasma from being generated between the high-frequency antenna and the sub-antenna. Even when plasma is generated, it is possible to ensure the electrical floating state of the sub-antenna. Furthermore, since charged particles in the plasma can be prevented from entering the high-frequency antenna and the sub-antenna, an increase in the plasma potential due to the incidence of plasma on both antennas can be suppressed, and both antennas can be connected to the plasma. It is possible to suppress the occurrence of metal contamination (metal contamination) on the plasma and the substrate by being sputtered by the charged particles therein.
  請求項２に記載の発明によれば次の更なる効果を奏する。即ち、高周波アンテナの表面と副アンテナの表面との間の距離を２５ｍｍ以下（０は含まない）にしているので、両アンテナが十分に近くなって、副アンテナに流れる誘導電流による誘導電界と、高周波アンテナを流れる高周波電流による誘導電界との協働によって誘導結合型のプラズマを効率良く発生させる作用効果をより高めることができる。更に、絶縁カバー内にガスが入ったとしても、両アンテナ間の距離が小さくて電子の移動距離が短いので、両アンテナ間にプラズマが発生するのを防止して、副アンテナの電気的フローティング状態をより確実なものにすることができる。 According to the second aspect of the present invention, the following further effect can be obtained. That is, since the distance between the surface of the high-frequency antenna and the surface of the sub-antenna is 25 mm or less (excluding 0), both antennas are sufficiently close to each other, The effect of efficiently generating inductively coupled plasma can be further enhanced by cooperation with an induction electric field generated by a high-frequency current flowing through the high-frequency antenna. Furthermore, even if gas enters the insulation cover, the distance between the two antennas is small and the distance of electron movement is short, so that plasma is prevented from being generated between the two antennas, and the sub-antenna is in an electrically floating state. Can be made more reliable.
  請求項３に記載の発明によれば次の更なる効果を奏する。即ち、高周波アンテナおよび副アンテナは絶縁カバー内に空間を介して配置されているので、当該空間の存在によって絶縁カバー表面の電位上昇を抑えることができ、それによってプラズマ電位の上昇を抑えることができる。 According to the third aspect of the present invention, the following further effects can be obtained. That is, since the high-frequency antenna and the sub-antenna are disposed in the insulating cover via a space, the presence of the space can suppress an increase in potential on the surface of the insulating cover, thereby suppressing an increase in plasma potential. .
この発明に係るプラズマ処理装置の一実施形態を示す概略断面図である。It is a schematic sectional drawing which shows one Embodiment of the plasma processing apparatus which concerns on this invention. 異なった構成で基板上にフッ素化シリコン窒化膜を形成したときの成膜速度を測定した結果の一例を示す図である。It is a figure which shows an example of the result of having measured the film-forming speed | rate when forming a fluorinated silicon nitride film on a board | substrate with a different structure. 図２の結果が得られた理由を説明するためのアンテナ周りの等価回路図である。FIG. 3 is an equivalent circuit diagram around an antenna for explaining the reason why the result of FIG. 2 is obtained.
  図１に、この発明に係るプラズマ処理装置の一実施形態を示す。このプラズマ処理装置は、真空排気されかつガス８が導入される真空容器２内に配置された高周波アンテナ１８に高周波電源２６から高周波電流ＩR を流すことによって当該真空容器２内に誘導電界を発生させてプラズマ（誘導結合型のプラズマ）３０を生成し、当該プラズマ３０を用いて基板１０に処理を施すように構成されている。 FIG. 1 shows an embodiment of a plasma processing apparatus according to the present invention. This plasma processing apparatus generates an induction electric field in the vacuum vessel 2 by flowing a high-frequency current I R from a high-frequency power source 26 to a high-frequency antenna 18 disposed in the vacuum vessel 2 that is evacuated and into which gas 8 is introduced. Thus, a plasma (inductively coupled plasma) 30 is generated, and the substrate 10 is processed using the plasma 30.
  基板１０は、例えば、半導体装置や太陽電池を構成する基板、液晶ディスプレイや有機ＥＬディスプレイ等のフラットパネルディスプレイ（ＦＰＤ）を構成する基板等であるが、これに限られるものではない。 Although the board | substrate 10 is a board | substrate which comprises flat panel displays (FPD), such as a board | substrate which comprises a semiconductor device and a solar cell, a liquid crystal display, an organic EL display, etc., for example, it is not restricted to this.
  基板１０に施す処理は、例えば、プラズマＣＶＤ法による膜形成、エッチング、アッシング、スパッタリング等である。 Examples of the treatment applied to the substrate 10 include film formation by plasma CVD, etching, ashing, and sputtering.
  このプラズマ処理装置は、プラズマＣＶＤ法によって膜形成を行う場合はプラズマＣＶＤ装置、エッチングを行う場合はプラズマエッチング装置、アッシングを行う場合はプラズマアッシング装置、スパッタリングを行う場合はプラズマスパッタリング装置とも呼ばれる。 This plasma processing apparatus is also called a plasma CVD apparatus when a film is formed by plasma CVD, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed.
  真空容器２は、例えば金属製の容器であり、その内部は真空排気装置４によって真空排気される。真空容器２はこの例では電気的に接地されている。 The vacuum vessel 2 is a metal vessel, for example, and the inside thereof is evacuated by the evacuation device 4. The vacuum vessel 2 is electrically grounded in this example.
  真空容器２内に、例えば流量調節器（図示省略）および高周波アンテナ１８に沿う方向に配置された複数のガス導入口６を経由して、ガス８が導入される。ガス８は、基板１０に施す処理内容に応じたものにすれば良い。例えば、プラズマＣＶＤ法によって基板１０に膜形成を行う場合は、ガス８は、原料ガスまたはそれを希釈ガス（例えばＨ2 ）で希釈したガスである。より具体例を挙げると、原料ガスがＳiＨ4 の場合はＳi 膜を、ＳiＨ4 ＋ＮＨ3 の場合はＳiＮ膜を、ＳiＨ4 ＋Ｏ2 の場合はＳiＯ2 膜を、ＳiＦ4 ＋Ｎ2 の場合はＳiＮ：Ｆ膜（フッ素化シリコン窒化膜）を、それぞれ基板１０上に形成することができる。 The gas 8 is introduced into the vacuum vessel 2 through, for example, a flow rate regulator (not shown) and a plurality of gas inlets 6 arranged in a direction along the high-frequency antenna 18. The gas 8 may be in accordance with the content of processing performed on the substrate 10. For example, when film formation is performed on the substrate 10 by plasma CVD, the gas 8 is a source gas or a gas obtained by diluting it with a diluent gas (for example, H 2 ). More specifically, when the source gas is SiH 4 , the Si film is formed; when SiH 4 + NH 3 is used, the SiN film is formed; when SiH 4 + O 2 is used, the SiO 2 film is formed; and when SiF 4 + N 2 is used, the SiN film is formed. : F film (fluorinated silicon nitride film) can be formed on the substrate 10, respectively.
  真空容器２内に、基板１０を保持する基板ホルダ１２が設けられている。この例のように、基板ホルダ１２にバイアス電源１４からバイアス電圧を印加するようにしても良い。
バイアス電圧は、例えば負の直流電圧、負のパルス電圧等であるが、これに限られるものではない。このようなバイアス電圧によって、例えば、プラズマ３０中の正イオンが基板１０に入射するときのエネルギーを制御して、基板１０の表面に形成される膜の結晶化度の制御等を行うことができる。基板ホルダ１２内に、基板１０を加熱するヒータを設けておいても良い。 A substrate holder 12 that holds the substrate 10 is provided in the vacuum vessel 2. As in this example, a bias voltage may be applied to the substrate holder 12 from the bias power supply 14.
The bias voltage is, for example, a negative DC voltage, a negative pulse voltage, or the like, but is not limited thereto. With such a bias voltage, for example, the energy when positive ions in the plasma 30 are incident on the substrate 10 can be controlled to control the crystallinity of the film formed on the surface of the substrate 10. . A heater for heating the substrate 10 may be provided in the substrate holder 12.
  高周波アンテナ１８は、この例では直線状のアンテナであり、真空容器２内における基板１０の上方に、基板１０の表面に沿うように（例えば、基板１０の表面と実質的に平行に）配置されている。この高周波アンテナ１８の両端部付近は、真空容器２の相対向する壁面に設けられた二つの開口部１６をそれぞれ貫通している。各開口部１６には、各開口部１６を気密に塞ぐように絶縁物（例えば絶縁フランジ）２２が設けられている。高周波アンテナ１８の両端部付近はこの各絶縁物２２を貫通していて、各絶縁物２２を介して真空容器２から支持されている。 In this example, the high-frequency antenna 18 is a linear antenna, and is disposed above the substrate 10 in the vacuum vessel 2 so as to be along the surface of the substrate 10 (for example, substantially parallel to the surface of the substrate 10). ing. Near both ends of the high-frequency antenna 18, two openings 16 provided on opposite wall surfaces of the vacuum vessel 2 are respectively penetrated. Each opening 16 is provided with an insulator (for example, an insulating flange) 22 so as to hermetically close each opening 16. The vicinity of both ends of the high-frequency antenna 18 penetrates the insulators 22 and is supported from the vacuum vessel 2 via the insulators 22.
  高周波アンテナ１８から基板ホルダ１２までの距離は、例えば、５０ｍｍ～２５０ｍｍ程度であり、より具体的には一例として１００ｍｍであるが、これに限られるものではない。 The distance from the high-frequency antenna 18 to the substrate holder 12 is, for example, about 50 mm to 250 mm, and more specifically 100 mm as an example, but is not limited thereto.
  なお、各絶縁物２２と真空容器２との間、高周波アンテナ１８と絶縁物２２との間および後述する副アンテナ２０と絶縁物２２との間には、真空シール用のパッキン（例えばＯリング）が設けられているが、これらの図示を省略している。 In addition, between each insulator 22 and the vacuum vessel 2, between the high frequency antenna 18 and the insulator 22, and between the sub antenna 20 and the insulator 22 described later, a vacuum seal packing (for example, an O-ring) is provided. However, illustration of these is omitted.
  高周波アンテナ１８には、高周波電源２６から整合回路２８を介して高周波電流ＩR が流される。高周波電流ＩR の周波数は、例えば、一般的な１３．５６ＭＨｚであるが、これに限られるものではない。 The high frequency antenna 18, a high-frequency current I R is flowed from the high frequency power supply 26 via a matching circuit 28. The frequency of the high-frequency current I R is, for example, a general 13.56 MHz, but is not limited thereto.
  真空容器２内に、高周波アンテナ１８に沿って（例えば実質的に平行に）、副アンテナ２０が配置されている。この副アンテナ２０も、この例では高周波アンテナ１８に合わせて直線状をしている。副アンテナ２０は、例えば高周波アンテナ１８と同程度の長さにすれば良い。副アンテナ２０は、その両端部付近が上記絶縁物２２を介して真空容器２から支持されていて、電気的にフローティング状態（浮いた状態）に置かれている。 A secondary antenna 20 is disposed in the vacuum container 2 along the high-frequency antenna 18 (for example, substantially parallel). In this example, the sub-antenna 20 also has a linear shape in accordance with the high-frequency antenna 18. The sub-antenna 20 may be about the same length as the high-frequency antenna 18, for example. The sub-antenna 20 is supported in the vicinity of both ends from the vacuum vessel 2 via the insulator 22 and is placed in an electrically floating state (floating state).
  高周波アンテナ１８に対する副アンテナ２０の位置は、高周波アンテナ１８の上下、左右のいずれでも良いけれども、この例のように、高周波アンテナ１８の上方、即ち高周波アンテナに対して基板１０とは反対側に配置するのが好ましい。そのようにすると、高周波電流ＩR を流してプラズマ３０を主に発生させる高周波アンテナ１８を基板１０により近づけることができるので、基板１０の処理にプラズマ３０をより効率良く用いることができる。 Although the position of the sub antenna 20 with respect to the high frequency antenna 18 may be either the top, bottom, left or right of the high frequency antenna 18, it is arranged above the high frequency antenna 18, that is, on the side opposite to the substrate 10 with respect to the high frequency antenna as in this example. It is preferable to do this. By doing so, the high frequency antenna 18 that mainly generates the plasma 30 by flowing the high frequency current I R can be brought closer to the substrate 10, so that the plasma 30 can be used more efficiently for the processing of the substrate 10.
  なお、図１に示す例では副アンテナ２０の両端部付近が各絶縁物２２を貫通しているけれども、これは後述する副アンテナ２０の両端接地の実験を行う等のためであり、必ずしも貫通していなくても良い。また、絶縁物２２を、高周波アンテナ１８を支持するものと副アンテナ２０を支持するものとに分けても良い。 In the example shown in FIG. 1, the vicinity of both ends of the sub-antenna 20 penetrates each insulator 22, but this is for the purpose of conducting an experiment of grounding both ends of the sub-antenna 20 to be described later. It does not have to be. Further, the insulator 22 may be divided into those that support the high-frequency antenna 18 and those that support the sub-antenna 20.
  高周波アンテナ１８および副アンテナ２０の材質は、例えば、銅、アルミニウム、これらの合金、ステンレス等であるが、これに限られるものではない。 The material of the high frequency antenna 18 and the sub antenna 20 is, for example, copper, aluminum, alloys thereof, stainless steel, etc., but is not limited thereto.
  高周波アンテナ１８を中空にして、その中に冷却水等の冷媒を流し、高周波アンテナ１８を冷却するようにしても良い。副アンテナ２０についても同様である。 The high frequency antenna 18 may be made hollow, and a coolant such as cooling water may be passed through it to cool the high frequency antenna 18. The same applies to the sub-antenna 20.
  両アンテナ１８、２０の直径（外径）は、大きくする方がインピーダンス（特にインダクタンス）が小さくなるので好ましい。例えば、両アンテナ１８、２０の直径は１２ｍｍ以上にしても良い。両アンテナ１８、２０の直径は、互いに同じにしても良いし、高周波アンテナ１８の直径を副アンテナ２０の直径よりも大きくしても良い。後者のようにすると、主たるアンテナである高周波アンテナ１８のインピーダンス（特にインダクタンス）がより小さくなるので、高周波アンテナ１８に高周波電流ＩR が流れやすくなる。 Increasing the diameter (outer diameter) of both antennas 18 and 20 is preferable because impedance (particularly inductance) decreases. For example, the diameters of both antennas 18 and 20 may be 12 mm or more. The diameters of both antennas 18 and 20 may be the same, or the diameter of the high-frequency antenna 18 may be larger than the diameter of the sub-antenna 20. In the latter case, the impedance (particularly the inductance) of the high-frequency antenna 18 that is the main antenna is further reduced, so that the high-frequency current I R easily flows through the high-frequency antenna 18.
  絶縁物２２の材質は、例えば、アルミナ等のセラミックス、石英、またはポリフェニンサルファイド（ＰＰＳ）、ポリエーテルエーテルケトン（ＰＥＥＫ）等のエンジニアリングプラスチック等であるが、これに限られるものではない。 The material of the insulator 22 is, for example, ceramics such as alumina, quartz, or engineering plastics such as polyphenine sulfide (PPS) or polyether ether ketone (PEEK), but is not limited thereto.
  このプラズマ処理装置は、更に、真空容器２内に位置する部分の高周波アンテナ１８および副アンテナ２０を一括して覆うものであって、絶縁物製で筒状の絶縁カバー２４を備えている。絶縁カバー２４の両端部と真空容器２との間はシールしなくても良い。絶縁カバー２４内の空間にガス８が入っても、当該空間は小さくて電子の移動距離が短いので、通常は当該空間にプラズマは発生しないからである。 This plasma processing apparatus further covers a portion of the high-frequency antenna 18 and the sub-antenna 20 located in the vacuum vessel 2 and is provided with a cylindrical insulating cover 24 made of an insulating material. It is not necessary to seal between the both ends of the insulating cover 24 and the vacuum vessel 2. This is because even if the gas 8 enters the space in the insulating cover 24, the space is small and the electron moving distance is short, so that plasma is not normally generated in the space.
  絶縁カバー２４の材質は、例えば、石英、アルミナ、フッ素樹脂、窒化シリコン、炭化シリコン、シリコン等であるが、これらに限られるものではない。 The material of the insulating cover 24 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon or the like, but is not limited thereto.
  このプラズマ処理装置においては、高周波アンテナ１８に高周波電流ＩR を流すことによって、高周波アンテナ１８の周囲に高周波磁界が発生し、それによって高周波電流ＩR と逆方向に誘導電界が発生する。この誘導電界によって、真空容器２内において、電子が加速されて高周波アンテナ１８の近傍のガス８を電離させて高周波アンテナ１８の近傍にプラズマ（即ち誘導結合型のプラズマ）３０が発生する。このプラズマ３０は基板１０の近傍まで拡散し、このプラズマ３０によって基板１０に前述した処理を施すことができる。 In this plasma processing apparatus, a high-frequency magnetic field is generated around the high-frequency antenna 18 by flowing a high-frequency current I R through the high-frequency antenna 18, thereby generating an induction electric field in a direction opposite to the high-frequency current I R. Due to this induction electric field, electrons are accelerated in the vacuum chamber 2 to ionize the gas 8 in the vicinity of the high-frequency antenna 18 to generate plasma (ie, inductively coupled plasma) 30 in the vicinity of the high-frequency antenna 18. The plasma 30 diffuses to the vicinity of the substrate 10, and the plasma 10 can be subjected to the processing described above.
  更に、このプラズマ処理装置によれば、高周波アンテナ１８に高周波電流ＩR を流すことによって副アンテナ２０に誘導起電力が生じ、それによって、副アンテナ２０を電気的にフローティング状態に置いていても、主として副アンテナ２０の両端部付近の絶縁物２２部分に自然に存在する静電容量を経由して副アンテナ２０に誘導電流（図３（Ｃ）中の誘導電流Ｉ2 参照）が流れる。この副アンテナ２０に流れる誘導電流による誘導電界と、高周波アンテナ１８に流れる高周波電流ＩR による誘導電界とが協働して、誘導結合型のプラズマ３０を効率良く発生させることができる。従って、高周波アンテナ１８を長くする場合でも誘導結合型のプラズマ３０を効率良く発生させることができる。その結果、高周波アンテナ１８を長くして基板１０の大型化等に対応することが容易になる。例えば、高周波アンテナ１８の長さが２０００ｍｍを超えるような場合にも適用することが可能になる。 Furthermore, according to this plasma processing apparatus, an induced electromotive force is generated in the sub-antenna 20 by flowing a high-frequency current I R through the high-frequency antenna 18, so that even if the sub-antenna 20 is placed in an electrically floating state, An induced current (see the induced current I 2 in FIG. 3C) flows through the sub-antenna 20 mainly through electrostatic capacity that naturally exists in the insulator 22 portion near both ends of the sub-antenna 20. The induction electric field due to the induced current flowing through the auxiliary antenna 20, and cooperate with the induction electric field generated by the high frequency current I R flowing through the high frequency antenna 18, the inductively coupled plasma 30 can be efficiently generated. Therefore, even when the high frequency antenna 18 is lengthened, the inductively coupled plasma 30 can be generated efficiently. As a result, it becomes easy to increase the size of the substrate 10 by elongating the high-frequency antenna 18. For example, the present invention can be applied to a case where the length of the high-frequency antenna 18 exceeds 2000 mm.
  しかも、真空容器２内に位置する部分の高周波アンテナ１８および副アンテナ２０を一括して絶縁カバー２４で覆っているので、高周波アンテナ１８と副アンテナ２０との間にプラズマが発生するのを防止して、真空容器２内にプラズマ３０を発生させた時にも、副アンテナ２０の電気的フローティング状態を確保することができる。更に、プラズマ３０中の荷電粒子が高周波アンテナ１８および副アンテナ２０に入射するのを防止することができるので、両アンテナ１８、２０にプラズマ３０が入射することによるプラズマ電位の上昇を抑制することができると共に、両アンテナ１８、２０がプラズマ３０中の荷電粒子によってスパッタされてプラズマ３０および基板１０に対して金属汚染（メタルコンタミネーション）が生じるのを抑制することができる。 In addition, since the portions of the high frequency antenna 18 and the sub antenna 20 located in the vacuum chamber 2 are collectively covered with the insulating cover 24, plasma is prevented from being generated between the high frequency antenna 18 and the sub antenna 20. Thus, even when the plasma 30 is generated in the vacuum vessel 2, the sub-antenna 20 can be kept in an electrically floating state. Further, since charged particles in the plasma 30 can be prevented from entering the high-frequency antenna 18 and the sub-antenna 20, it is possible to suppress an increase in plasma potential due to the plasma 30 entering the both antennas 18 and 20. In addition, both antennas 18 and 20 can be prevented from being sputtered by charged particles in the plasma 30 and causing metal contamination (metal contamination) to the plasma 30 and the substrate 10.
  上述したプラズマ３０を効率良く発生させることができることについて、実験結果を参照して以下により詳しく説明する。 The fact that the plasma 30 described above can be generated efficiently will be described in more detail below with reference to experimental results.
  図１に示す構成のプラズマ処理装置において、高周波アンテナ１８および副アンテナ２０の長さを共に１３４０ｍｍとし、両アンテナ１８、２０の表面間の距離Ｄを２５ｍｍとし、ガス８としてＳiＦ4 （四フッ化シリコンガス）およびＮ2 ガス（窒素ガス）の混合ガスを用い、高周波電源２６から１３・５６ＭＨｚの高周波電流ＩR を高周波アンテナ１８に供給して、前述した誘導電界によって真空容器２内に誘導結合型のプラズマ３０を発生させ、基板１０上にＳiＮ：Ｆ膜（フッ素化シリコン窒化膜）を形成した。そして、このＳiＮ：Ｆ膜の成膜速度を測定した結果の一例を、図２中の（Ｃ）実施例として示す。
この実施例のアンテナ周りの等価回路を図３（Ｃ）に示す。なお、図示を簡略化するために、図３では整合回路２８（図１参照）の図示を省略している。 In the plasma processing apparatus having the configuration shown in FIG. 1, the lengths of the high-frequency antenna 18 and the sub-antenna 20 are both 1340 mm, the distance D between the surfaces of the antennas 18 and 20 is 25 mm, and the gas 8 is SiF 4 (tetrafluoride). the mixed gas used in the silicon gas) and N 2 gas (nitrogen gas), by supplying a high-frequency current I R from the high-frequency power source 26 13 · 56 MHz high frequency antenna 18, the inductive coupling into the vacuum chamber 2 by the induced electric field described above A mold plasma 30 was generated to form a SiN: F film (fluorinated silicon nitride film) on the substrate 10. An example of the result of measuring the deposition rate of the SiN: F film is shown as Example (C) in FIG.
An equivalent circuit around the antenna in this embodiment is shown in FIG. In order to simplify the illustration, the matching circuit 28 (see FIG. 1) is not shown in FIG.
  また、この実施例との比較のために、上記副アンテナ２０を取り外した場合の成膜速度を測定した結果を、図２中の（Ａ）比較例１として示す。この比較例１のアンテナ周りの等価回路を図３（Ａ）に示す。この比較例１は、副アンテナ２０を有していないので、前述した特許文献１に記載の技術と同様の従来技術に相当する。更に、上記副アンテナ２０の両端部を接地した場合の成膜速度を測定した結果を、図２中の（Ｂ）比較例２として示す。この比較例２のアンテナ周りの等価回路を図３（Ｂ）に示す。なお、比較例１および２においては、副アンテナ２０に関するもの以外は、上記実施例の場合と同じ成膜条件にした。 For comparison with this example, the measurement result of the film formation speed when the sub-antenna 20 is removed is shown as (A) Comparative Example 1 in FIG. An equivalent circuit around the antenna of Comparative Example 1 is shown in FIG. Since this comparative example 1 does not have the sub-antenna 20, it corresponds to the conventional technique similar to the technique described in Patent Document 1 described above. Furthermore, the result of measuring the film forming speed when both ends of the sub-antenna 20 are grounded is shown as (B) Comparative Example 2 in FIG. An equivalent circuit around the antenna of Comparative Example 2 is shown in FIG. In Comparative Examples 1 and 2, the film forming conditions were the same as those in the above example except for the sub antenna 20.
  図２に示すように、比較例１の成膜速度が最も小さかった。また、比較例２の成膜速度は、比較例１に比べて１割程度増加した。一方、実施例の成膜速度は、比較例１および２に比べて大きく増加した。 As shown in FIG. 2, the film formation rate of Comparative Example 1 was the lowest. Further, the film formation rate of Comparative Example 2 was increased by about 10% compared to Comparative Example 1. On the other hand, the film formation rate of the example greatly increased as compared with Comparative Examples 1 and 2.
  高周波アンテナ１８に上記のような高周波電流ＩR を流した時の高周波アンテナ１８近傍の高周波の挙動の解析は容易ではないが、上記のような測定結果が得られた理由は次のようなものであると考えられる。 Without the high frequency antenna 18 Analysis of the high-frequency behavior of neighboring easy upon applying a high-frequency current I R as described above to the high frequency antenna 18, what reason the measurement results as described above is obtained as follows It is thought that.
  図３（Ａ）に示す比較例１の場合は、アンテナは高周波アンテナ１８のみであり、前述したようにその長さが長くなるとそのインピーダンスＺ1 、特にその自己インダクタンスＬ1 が大きくなって高周波電流ＩR が流れにくくなるので、プラズマ３０の密度が小さく、従って成膜速度も小さい。 In the case of Comparative Example 1 shown in FIG. 3A, the antenna is only the high-frequency antenna 18, and as described above, the impedance Z 1 , particularly the self-inductance L 1 , increases as the length increases, and the high-frequency current increases. since I R hardly flows, the density of the plasma 30 is small, thus the film formation rate is also small.
  これに対して、図３（Ｃ）に示す実施例の場合は、副アンテナ２０を電気的にフローティング状態に置いていても、主として副アンテナ２０の両端部付近の絶縁物２２（図１参照）の部分に静電容量Ｃ2 がそれぞれ自然に存在する（これは、特にコンデンサを設けなくても存在するという意味である）。そして両静電容量Ｃ2 は、金属製の真空容器２等の接地回路を経由して副アンテナ２０の両端部間に直列に接続された形になり、副アンテナ２０と共に閉回路を形成している。両静電容量Ｃ2 の値は、略言すれば互いにほぼ等しいと考えても良く、互いに直列接続された二つの静電容量Ｃ2 の合成の静電容量Ｃ0 は次式で表される。 On the other hand, in the case of the embodiment shown in FIG. 3C, the insulator 22 (see FIG. 1) mainly near both ends of the sub antenna 20 even if the sub antenna 20 is placed in an electrically floating state. The capacitance C 2 naturally exists in the portion (this means that the capacitor C 2 exists even without a capacitor). Both capacitances C 2 are connected in series between both ends of the sub-antenna 20 via a ground circuit such as a metal vacuum vessel 2 and form a closed circuit together with the sub-antenna 20. Yes. In short, the values of both capacitances C 2 may be considered to be substantially equal to each other, and a combined capacitance C 0 of two capacitances C 2 connected in series with each other is expressed by the following equation. .
  ［数１］
    Ｃ0 ＝Ｃ2 ／２ [Equation 1]
C 0 = C 2/2
  高周波アンテナ１８に高周波電源２６から高周波電流ＩR を流すことによって、それによる磁束φと鎖交する副アンテナ２０には、ファラデーの法則により、次式で表される誘導起電力Ｖ2 が生じる。ここで、ωは高周波電流ＩR の角周波数、Ｍは両アンテナ１８、２０間の相互インダクタンス、ｊは虚数単位である。 By flowing a high frequency current I R from the high frequency power source 26 to the high frequency antenna 18, the auxiliary antenna 20 interlinked therewith by the magnetic flux φ and chain, by Faraday's law, results induced electromotive force V 2 represented by the following formula. Here, ω is an angular frequency of the high-frequency current I R , M is a mutual inductance between the antennas 18 and 20, and j is an imaginary unit.
  ［数２］
    Ｖ2 ＝－ｄφ／ｄｔ＝－ｊωＭＩR  [Equation 2]
V 2 = −dφ / dt = −jωMI R
  副アンテナ２０の抵抗は、通常はその自己インダクタンスＬ2 によるリアクタンスに比べて十分に小さいので、副アンテナ２０を含む閉回路のインピーダンスＺ2 をリアクタンスを用いて近似的に表すと、上記誘導起電力Ｖ2 によって、副アンテナ２０には次式で表される誘導電流Ｉ2 が流れる。Ｃ0 は数１に示した合成の静電容量である。なお、ここでは図３に示した高周波電流ＩR および誘導電流のＩ2 の向きを正としている。 Since the resistance of the sub-antenna 20 is usually sufficiently smaller than the reactance due to its self-inductance L 2 , when the impedance Z 2 of the closed circuit including the sub-antenna 20 is approximately expressed using the reactance, the induced electromotive force is Due to V 2 , an induced current I 2 represented by the following formula flows through the sub-antenna 20. C 0 is the combined capacitance shown in Equation 1. Here, the directions of the high-frequency current I R and the induced current I 2 shown in FIG. 3 are positive.
  ［数３］
    Ｉ2 ＝Ｖ2 ／Ｚ2 
        ≒－ｊωＭＩR ／ｊ（ωＬ2 －１／ωＣ0 ）
        ≒－ωＭＩR ／（ωＬ2 －１／ωＣ0 ） [Equation 3]
I 2 = V 2 / Z 2
≒ -jωMI R / j (ωL 2 -1 / ωC 0 )
≒ -ωMI R / (ωL 2 -1 / ωC 0 )
  上記静電容量Ｃ2 は、前述したように主として副アンテナ２０の両端部付近の絶縁物２２部分に自然に存在する静電容量であるので通常は小さく、従ってその合成の静電容量Ｃ0 も小さい。従って、上記数３中のリアクタンス（ωＬ2 －１／ωＣ0 ）は負の値になり、その結果、誘導電流Ｉ2 は正の値になる。つまり、副アンテナ２０には、図３（Ｃ）に示すとおり、高周波アンテナ１８を流れる高周波電流ＩR と同じ向きの誘導電流Ｉ2 が流れる。 The capacitance C 2 is usually small because it is a capacitance that naturally exists mainly in the insulator 22 portions near both ends of the sub-antenna 20 as described above. Therefore, the combined capacitance C 0 is also small. small. Accordingly, the reactance (ωL 2 −1 / ωC 0 ) in the above equation 3 becomes a negative value, and as a result, the induced current I 2 becomes a positive value. That is, as shown in FIG. 3C, the sub-antenna 20 is supplied with an induction current I 2 having the same direction as the high-frequency current I R flowing through the high-frequency antenna 18.
  誘導電流Ｉ2 が高周波電流ＩR と同じ向きに流れると、高周波アンテナ１８のインピーダンスＺ1 を構成するインダクタンスは、自己インダクタンスＬ1 よりも相互インダクタンスＭを加味して幾分大きくなることが考えられるけれども、高周波アンテナ１８を流れる高周波電流ＩR が発生させる高周波磁界と、副アンテナ２０を流れる誘導電流Ｉ2 が発生させる高周波磁界とが同方向になって、高周波アンテナ１８を流れる高周波電流ＩR による誘導電界を、副アンテナ２０を流れる誘導電流Ｉ2 による誘導電界が増強するように作用するので、誘導結合型のプラズマ３０を効率良く発生させることができる。上記のような作用を総合した結果、プラズマ３０の密度が大きく増加して、成膜速度が比較例１、２に比べて大きく増加したものと考えられる。 If the induced current I 2 flows in the same direction as the high-frequency current I R , the inductance constituting the impedance Z 1 of the high-frequency antenna 18 may be somewhat larger than the self-inductance L 1 in consideration of the mutual inductance M 1. However, the high-frequency magnetic field generated by the high-frequency current I R flowing through the high-frequency antenna 18 and the high-frequency magnetic field generated by the induction current I 2 flowing through the sub-antenna 20 are in the same direction, and the high-frequency current I R flowing through the high-frequency antenna 18 Since the induced electric field acts so that the induced electric field caused by the induced current I 2 flowing through the sub-antenna 20 is enhanced, the inductively coupled plasma 30 can be generated efficiently. As a result of integrating the actions as described above, it is considered that the density of the plasma 30 is greatly increased, and the film forming rate is greatly increased as compared with Comparative Examples 1 and 2.
  しかもこの実施例の場合は、電気的にフローティング状態に置いている副アンテナ２０の両端部付近の絶縁物２２部分に自然に存在する静電容量Ｃ2 をうまく利用しており、副アンテナ２０と共に閉回路を形成するコンデンサを特に設けなくて済む。従って、コンデンサを設ける場合に比べて、部品点数の削減、組立作業工程の削減等を図ることができる。 In addition, in this embodiment, the electrostatic capacity C 2 that naturally exists in the insulator 22 near the both ends of the sub-antenna 20 placed in an electrically floating state is used well, and together with the sub-antenna 20 There is no need to provide a capacitor for forming a closed circuit. Therefore, compared with the case where a capacitor is provided, it is possible to reduce the number of parts and the assembly work process.
  一方、図３（Ｂ）に示す比較例２の場合は、副アンテナ２０の両端部を接地しているため、上記静電容量Ｃ2 は存在せず、従って数３中のリアクタンス１／ωＣ0 は０になるので、誘導電流Ｉ2 は負の値になる。つまり、副アンテナ２０には、図３（Ｂ）に示すものとは逆向きに、即ち高周波アンテナ１８を流れる高周波電流ＩR と逆向きに誘導電流Ｉ2 が流れる。しかもこの誘導電流Ｉ2 は、上記実施形態の場合よりも大きくなる。 On the other hand, in the case of the comparative example 2 shown in FIG. 3B, since both ends of the sub-antenna 20 are grounded, the capacitance C 2 does not exist. Therefore, the reactance 1 / ωC 0 in Equation 3 is present. Becomes 0, the induced current I 2 becomes a negative value. That is, the induced current I 2 flows through the sub-antenna 20 in the direction opposite to that shown in FIG. 3B, that is, in the direction opposite to the high-frequency current I R flowing through the high-frequency antenna 18. Moreover, this induced current I 2 is larger than in the case of the above embodiment.
  誘導電流Ｉ2 が高周波電流ＩR と逆向きに流れると、高周波アンテナ１８のインピーダンスＺ1 を構成インダクタンスは、自己インダクタンスＬ1 よりも相互インダクタンスＭを加味して幾分小さくなり、それによって高周波アンテナ１８に高周波電流ＩR が流れやすくなる反面、高周波アンテナ１８を流れる高周波電流ＩR による誘導電界を、副アンテナ２０を流れる誘導電流Ｉ2 による誘導電界が弱めるように作用する。上記のような作用を総合した結果、プラズマ３０の密度はあまり増加せず、従って成膜速度も比較例１に比べてあまり増加しなかったものと考えられる。 When the induced current I 2 flows in the direction opposite to the high frequency current I R , the inductance Z 1 of the high frequency antenna 18 becomes somewhat smaller than the self inductance L 1 in consideration of the mutual inductance M. Although the high-frequency current I R easily flows through the high-frequency antenna 18, the induced electric field due to the high-frequency current I R flowing through the high-frequency antenna 18 acts so as to weaken the induced electric field due to the induced current I 2 flowing through the sub-antenna 20. As a result of synthesizing the above actions, it is considered that the density of the plasma 30 did not increase so much, and therefore the film formation rate did not increase much compared to Comparative Example 1.
  再び図１を参照して、高周波アンテナ１８の表面と副アンテナ２０の表面との間の距離Ｄを２５ｍｍ以下（０は含まない）にするのが好ましい。そのようにすると、両アンテナ１８、２０が十分に近くなって、副アンテナ２０に流れる誘導電流Ｉ2 による誘導電界と、高周波アンテナ１８を流れる高周波電流ＩR による誘導電界との協働によって誘導結合型のプラズマ３０を効率良く発生させる前述した作用効果をより高めることができる。更に、絶縁カバー２４内にガス８が入ったとしても、両アンテナ１８、２０間の距離が小さくて電子の移動距離が短いので、両アンテナ１８、２０間にプラズマが発生するのを防止して、副アンテナ２０の電気的フローティング状態をより確実なものにすることができる。 Referring to FIG. 1 again, the distance D between the surface of the high-frequency antenna 18 and the surface of the sub-antenna 20 is preferably set to 25 mm or less (not including 0). As a result, both antennas 18 and 20 are sufficiently close to each other, and the inductive coupling is caused by the cooperation between the induced electric field caused by the induced current I 2 flowing through the sub-antenna 20 and the induced electric field caused by the high frequency current I R flowing through the high-frequency antenna 18. The above-described effect of efficiently generating the mold plasma 30 can be further enhanced. Further, even if the gas 8 enters the insulating cover 24, the distance between the antennas 18 and 20 is small and the distance of movement of electrons is short, so that plasma is prevented from being generated between the antennas 18 and 20. The electric floating state of the sub antenna 20 can be made more reliable.
  前記絶縁カバー２４内の両アンテナ１８、２０以外の部分に、樹脂等の絶縁物が充填されていても良い。そのようにすると、絶縁カバー２４内でプラズマが発生するのをより確実に防止することができる。 A portion other than both antennas 18 and 20 in the insulating cover 24 may be filled with an insulator such as resin. By doing so, it is possible to more reliably prevent plasma from being generated in the insulating cover 24.
  また、高周波アンテナ１８および副アンテナ２０は、この実施形態のように、絶縁カバー２４内に空間２３を介して配置しておいても良い。そのようにすると、当該空間２３の存在によって絶縁カバー２４の表面の電位上昇を抑えることができ、それによってプラズマ３０の電位の上昇を抑えることができる。 In addition, the high frequency antenna 18 and the sub antenna 20 may be arranged in the insulating cover 24 via the space 23 as in this embodiment. By doing so, the presence of the space 23 can suppress an increase in the potential of the surface of the insulating cover 24, thereby suppressing an increase in the potential of the plasma 30.
  副アンテナ２０を曲げること等によって、高周波アンテナ１８と副アンテナ２０との間の上記距離Ｄを、上記範囲内において、例えば５ｍｍ～２５ｍｍの範囲内において、高周波アンテナ１８の長手方向において変化させても良い。そのようにすると、高周波アンテナ１８の長手方向におけるプラズマ３０の密度分布を制御して、基板１０上に形成される膜の密度分布を制御することが可能になる。 Even if the sub-antenna 20 is bent, the distance D between the high-frequency antenna 18 and the sub-antenna 20 may be changed in the longitudinal direction of the high-frequency antenna 18 within the above range, for example, within a range of 5 mm to 25 mm. good. By doing so, it is possible to control the density distribution of the film formed on the substrate 10 by controlling the density distribution of the plasma 30 in the longitudinal direction of the high-frequency antenna 18.
  絶縁カバー２４で覆われた高周波アンテナ１８および副アンテナ２０を一つのアンテナユニットとして、基板１０の大きさ等に応じて、複数のアンテナユニットを基板１０の表面に沿う方向に並設しても良い。そのようにすると、面積のより大きいプラズマ３０を発生させて、より大型の基板１０に処理を施すことが可能になる。 The high-frequency antenna 18 and the sub-antenna 20 covered by the insulating cover 24 may be used as one antenna unit, and a plurality of antenna units may be arranged in a direction along the surface of the substrate 10 according to the size of the substrate 10 or the like. . By doing so, it is possible to generate a plasma 30 with a larger area and to process the larger substrate 10.
  ２  真空容器
  ８  ガス
  １０  基板
  １８  高周波アンテナ
  ２０  副アンテナ
  ２２  絶縁物
  ２４  絶縁カバー
  ２６  高周波電源
  ３０  プラズマ 2 Vacuum container 8 Gas 10 Substrate 18 High frequency antenna 20 Sub antenna 22 Insulator 24 Insulation cover 26 High frequency power supply 30 Plasma

Claims (3)

  1.   真空排気されかつガスが導入される真空容器内に配置された高周波アンテナに高周波電源から高周波電流を流すことによって当該真空容器内に誘導電界を発生させてプラズマを生成し、当該プラズマを用いて基板に処理を施す誘導結合型のプラズマ処理装置であって、
      前記真空容器内に前記高周波アンテナに沿って配置された副アンテナであって、その両端部付近が絶縁物を介して前記真空容器から支持されていて、電気的にフローティング状態に置かれている副アンテナと、
      前記真空容器内に位置する部分の前記高周波アンテナおよび前記副アンテナを一括して覆う絶縁カバーとを備えていることを特徴とするプラズマ処理装置。     A plasma is generated by generating an induction electric field in the vacuum vessel by flowing a high-frequency current from a high-frequency power source to a high-frequency antenna disposed in a vacuum vessel that is evacuated and into which gas is introduced, and the substrate is formed using the plasma. An inductively coupled plasma processing apparatus for processing
    A sub-antenna disposed in the vacuum vessel along the high-frequency antenna, and both ends of the sub-antenna are supported from the vacuum vessel via an insulator and are placed in an electrically floating state. An antenna,
    A plasma processing apparatus comprising: an insulating cover that collectively covers the high-frequency antenna and the sub-antenna at a portion located in the vacuum vessel.
  2.   前記高周波アンテナの表面と前記副アンテナの表面との間の距離を２５ｍｍ以下（０は含まない）にしている請求項１記載のプラズマ処理装置。 The plasma processing apparatus according to claim 1, wherein a distance between the surface of the high-frequency antenna and the surface of the sub-antenna is set to 25 mm or less (excluding 0).
  3.   前記高周波アンテナおよび前記副アンテナは、前記絶縁カバー内に空間を介して配置されている請求項１または２記載のプラズマ処理装置。 The plasma processing apparatus according to claim 1 or 2, wherein the high-frequency antenna and the sub-antenna are disposed in the insulating cover via a space.
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