CN107251657A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN107251657A CN107251657A CN201680009474.XA CN201680009474A CN107251657A CN 107251657 A CN107251657 A CN 107251657A CN 201680009474 A CN201680009474 A CN 201680009474A CN 107251657 A CN107251657 A CN 107251657A
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- high frequency
- antenna
- plasma
- frequency antenna
- vacuum tank
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- 238000012545 processing Methods 0.000 title claims abstract description 31
- 238000007667 floating Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 40
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- 230000000052 comparative effect Effects 0.000 description 15
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- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005520 electrodynamics Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Even if present invention offer is a kind of can also to produce the plasma processing apparatus of inductively type plasma good efficiency in the case where extending high frequency antenna.The plasma processing apparatus includes high frequency antenna (18), and the high frequency antenna (18), which is configured at, to be vacuum exhausted and imported in the vacuum tank (2) of gas (8).The plasma processing apparatus so including：Slave antenna (20), is supported, and placed with left electrically floating state along near high frequency antenna (18) configuration and its both ends in vacuum tank (2) across insulant (22) by vacuum tank (2)；And insulation cover body (24), the unified covering of two antennas (18), antenna (20) of the part in vacuum tank (2) will be located at.
Description
Technical field
The present invention relates to a kind of plasma processing apparatus of inductively type, the plasma processing apparatus is by making
High frequency electric flows from high frequency electric source to high frequency antenna and makes to produce induction field in vacuum tank to generate plasma (sense
Answer coupled mode plasma, referred to as ICP (inductively coupled plasma)), using the plasma to base
Plate implement for example using plasma activated chemical vapour deposition (Chemical Vapor Deposition, CVD) method film formation,
The processing such as etching, ashing, sputter.
Background technology
As one of the plasma processing apparatus of inductively type, following plasma has been recorded in patent document 1
Body processing unit, i.e. flat high frequency antenna is installed on the opening portion of vacuum tank across insulation frame, from high frequency electric source to
Supply high frequency electric power between one end of the high frequency antenna and the other end and flow high frequency electric, utilize thus produced sensing
Electric field generates plasma, and substrate implementation is handled using the plasma.
Prior art literature
Patent document
No. 2009/142016 handbook of 1 International Publication No. WO of patent document (paragraph 0024- paragraphs 0026, Fig. 1)
The content of the invention
Invent problem to be solved
In the existing plasma processing apparatus, if extending high frequency antenna to tackle large substrate etc., institute
Impedance (especially inductance) increase of high frequency antenna is stated and high frequency electric becomes to be difficult flowing, produced by thus suppressing high frequency antenna
Induction field, thus there is produce inductively type plasma problem with being difficult to good efficiency.
Therefore, it is a primary object of the present invention to provide following plasma processing apparatus：Even if in extension high frequency day
In the case of line, it can also produce inductively type plasma good efficiency.
The technological means solved the problems, such as
The plasma processing apparatus of the present invention is the plasma processing apparatus of inductively type, by making high frequency electric
From high frequency electric source to the high frequency antenna flowing that is vacuum exhausted and has imported in the vacuum tank of gas is configured at, make the vacuum
Induction field is produced in container and plasma is generated, and substrate implementation is handled using the plasma, the plasma
Processing unit is characterised by including：Slave antenna, is configured in the vacuum tank along the high frequency antenna, and its both ends is attached
Closely supported, and placed with left electrically floating state by the vacuum tank across insulant；And insulation cover body (cover), by position
In the high frequency antenna of the part in the vacuum tank and the unified covering of the slave antenna.
According to the plasma processing apparatus, sense is produced in slave antenna by making high frequency electric be flowed to high frequency antenna
Electromotive force (induced electromotive force) is answered, thus, even if slave antenna is placed with left electrically floating state, sense
Induced current can also be present in the electrostatic capacitance of the insulant part near the both ends of slave antenna and to secondary day via Major Natural
Line flows.If flowing through induction field caused by the induced-current of the slave antenna and flowing through caused by the high frequency electric of high frequency antenna
Induction field cooperates, then can produce inductively type plasma good efficiency.Therefore, even if in the feelings of extension high frequency antenna
Also inductively type plasma can be produced under condition good efficiency.
The distance between the surface of the high frequency antenna and surface of the slave antenna can be set into below 25mm (to be free of
0)。
The high frequency antenna and the slave antenna can be across space configurations in the insulating boot body.
The effect of invention
Invention according to described in technical scheme 1, is produced by making high frequency electric be flowed to high frequency antenna in slave antenna
Induced electromotive force, thus, even if slave antenna is placed with left electrically floating state, induced-current can also be present in via Major Natural
The electrostatic capacitance of insulant part near the both ends of slave antenna and flowed to slave antenna.If flowing through the sensing of the slave antenna
Induction field caused by electric current cooperates with induction field caused by the high frequency electric for flowing through high frequency antenna, then can good efficiency real estate
Raw inductively type plasma.Therefore, even if can also produce sensing coupling in the case where extending high frequency antenna good efficiency
Mould assembly plasma.
Also, reason insulate cover body by the high frequency antenna of the part in vacuum tank and the unified covering of slave antenna, therefore
Prevent from producing plasma between high frequency antenna and slave antenna, also can be true even if produce plasma in vacuum tank
Protect the left electrically floating state of slave antenna.And then, because that can prevent the charged particle in plasma from entering to high frequency antenna and slave antenna
Penetrate, therefore the rising of the plasma potential because of caused by plasma to two antennas incidence can be suppressed, and two antennas can be suppressed
By the charged particle sputter in plasma, plasma and substrate produce metallic pollution (metal contamination)
Situation.
Invention according to described in technical scheme 2, further realizes following effects.That is, because by the surface of high frequency antenna with
The distance between surface of slave antenna is set to below 25mm (being free of 0), therefore two antennas are closely, can further improve following works
Use effect：Felt by flowing through induction field caused by the induced-current of slave antenna and flowing through caused by the high frequency electric of high frequency antenna
Answer the cooperation of electric field, and good efficiency produce inductively type plasma.And then, even if gas enters to insulation cover body
Interior, because the distance between two antennas is small and the displacement of electronics is short, therefore can prevent from producing plasma between two antennas, so that secondary
The left electrically floating state of antenna is more certain.
Invention according to described in technical scheme 3, further realizes following effects.That is, because high frequency antenna and slave antenna every
Space configuration in insulating boot body, therefore the current potential that can be suppressed insulating boot body surface face using the presence in the space is risen, by
This can suppress the rising of plasma potential.
Brief description of the drawings
Fig. 1 is the summary section for the embodiment for representing the plasma processing apparatus of the present invention.
Fig. 2 is represented to being measured with the different film forming speeds being formed in when fluorination silicon nitride film is formed on substrate
As a result the figure of one.
Fig. 3 is the equivalent circuit diagram around antenna the reasons why illustrating to obtain Fig. 2 result.
Embodiment
Fig. 1 represents an embodiment of the plasma processing apparatus of the present invention.The plasma processing apparatus is constituted
To be as follows：Make high frequency electric IRIt is vacuum exhausted and has imported in the vacuum tank 2 of gas 8 from high frequency electric source 26 to being configured at
High frequency antenna 18 flows, thus produce induction field in the vacuum tank 2 and generate plasma (inductively type etc. from
Daughter) 30, the implementation of substrate 10 is handled using the plasma 30.
Substrate 10 is, for example, to constitute the substrate of semiconductor device or solar cell, constitute liquid crystal display or organic electroluminescence hair
Substrate of the flat-panel monitors such as light (Electroluminescence, EL) display (flat panel display, FPD) etc.,
But not limited to this.
It is, for example, to utilize film formation, etching, ashing, sputter of plasma CVD method etc. to the processing that substrate 10 is implemented.
The plasma processing apparatus is referred to as plasma in the case where carrying out film formation using plasma CVD method
Body CVD device, plasma-etching apparatus is referred to as in the case where being etched, be referred to as in the case where being ashed etc.
Plasma ashing apparatus, plasma sputtering device is referred to as in the case where carrying out sputter.
Vacuum tank 2 is, for example, metal container, its inner utilization vacuum pumping hardware 4 and vacuum exhaust.Vacuum is held
The electrical ground in the example of device 2.
Via for example being led in the multiple gases configured along along flow regulator (diagram omit) and the direction of high frequency antenna 18
Entrance 6, gas 8 is imported into vacuum tank 2.Gas 8 is set to gas corresponding with the process content implemented to substrate 10.
For example, using plasma CVD method, in the case where substrate 10 carries out film formation, gas 8 is unstrpped gas or by the original
Expect gas with diluent gas (such as H2) gas obtained by dilution.It is SiH in unstrpped gas if enumerating more specifically example4's
In the case of, Si films can be formed on substrate 10；For SiH4+NH3In the case of, SiN film can be formed on substrate 10；
For SiH4+O2In the case of, can be by SiO2Film is formed on substrate 10；For SiF4+N2In the case of, can be by SiN：(the fluorination of F films
Silicon nitride film) it is formed on substrate 10.
The frame substrate 12 for keeping substrate 10 is set in vacuum tank 2.As described example like that, also can self-bias voltage source 14 to
Frame substrate 12 is biased voltage.Bias voltage is, for example, negative DC voltage, negative pulse voltage etc., but not limited to this.Profit
Use such a bias voltage, such as energy when cation that can be in plasma 30 is incident to substrate 10 is controlled, so that
Progress is formed at control of crystallization degree of film on surface of substrate 10 etc..It may also set up in frame substrate 12 and substrate 10 added
The heater of heat.
High frequency antenna 18 is linear antenna in the example, the top of the substrate 10 in vacuum tank 2, with along
Mode (for example with the surface of the substrate 10 substantially parallel) configuration on the surface of substrate 10.The both ends of the high frequency antenna 18 are attached
Two insertions of opening portion 16 of the nearly opposite wall that will be arranged at vacuum tank 2 respectively.In each opening portion 16, by each opening
The airtight mode blocked in portion 16 is provided with insulant (such as insulation flange) 22.Described in the insertion nearby of the both ends of high frequency antenna 18
Each insulant 22, is supported across each insulant 22 by vacuum tank 2.
Distance from high frequency antenna 18 to frame substrate 12 is, for example, 50mm~250mm or so, more specifically, is used as one
For 100mm, but not limited to this.
In addition, between each insulant 22 and vacuum tank 2, between high frequency antenna 18 and insulant 22 and pair described later
Between antenna 20 and insulant 22, the pad (such as o-ring) of vacuum sealing is set, but omits these diagram.
Make high frequency electric IRFlowed from high frequency electric source 26 via match circuit 28 to high frequency antenna 18.High frequency electric IRFrequency
Rate is, for example, general 13.56MHz, but not limited to this.
In vacuum tank 2, slave antenna 20 is configured along high frequency antenna 18 (such as substantially parallel).The slave antenna
20 in the example coordinate high frequency antenna 18 and it is also linearly.Slave antenna 20 is for example set to and the equal extent of high frequency antenna 18
Length.Supported near the both ends of slave antenna 20 across the insulant 22 by vacuum tank 2, and with left electrically floating state
(state of floating) is placed.
Although slave antenna 20 can be any of high frequency antenna about 18, in left and right relative to the position of high frequency antenna 18
It is individual, but example like that, preferably configures in the top of high frequency antenna 18, i.e., is configured at substrate 10 relative to high frequency antenna as described
Opposite side.It so, it is possible to make wherein flowing high frequency electric IRAnd the high frequency antenna 18 of plasma 30 is mainly produced closer to base
Plate 10, thus in the processing of substrate 10 can efficiency more excellently use plasma 30.
In addition, in example shown in Fig. 1, each insulant 22 of both ends insertion nearby of slave antenna 20, but this is to enter
Experiment of two-terminal-grounding of row slave antenna 20 described later etc., it is not necessary to insertion.Moreover, 22 points of insulant can be supported into high frequency
Antenna is with supporting slave antenna.
The material of high frequency antenna 18 and slave antenna 20 is, for example, copper, aluminium, these alloy, stainless steel etc., but not limited to this.
Also it is hollow that high frequency antenna 18, which can be made, and the refrigerants such as cooling water is flowed wherein, and high frequency antenna 18 is cooled down.
It is also identical on slave antenna 20.
Two antennas 18, antenna 20 the big person's impedance (especially inductance) of diameter (external diameter) it is small, thus preferably.For example, two antennas
18th, the diameter of antenna 20 can be more than 12mm.Two antennas 18, antenna 20 diameter can be mutually the same, can also make high frequency antenna 18
Diameter be more than slave antenna 20 diameter.In the case of for the latter, as principal antenna high frequency antenna 18 impedance (especially
Inductance) it is smaller, thus high frequency electric IRReadily flow to high frequency antenna 18.
The material of insulant 22 is, for example, the ceramics such as aluminum oxide, quartz or polyphenylene sulfide (polyphenylene
Sulfide, PPS), the engineering plastics (engineering such as polyether-ether-ketone (polyether ether ketone, PEEK)
Plastic) etc., but not limited to this.
The plasma processing apparatus and then insulated cover body 24 including tubular, tubular insulation cover body 24 will be located at true
The high frequency antenna 18 and slave antenna 20 of part in empty container 2 are unified to be covered, and is insulant system.The both ends of insulation cover body 24
Also can blow-by between vacuum tank 2.Because, even if the space that gas 8 is entered in insulation cover body 24, because of the sky
Between it is small and the displacement of electronics is short, therefore generally will not produce plasma in the space.
The material of insulation cover body 24 is, for example, quartz, aluminum oxide, fluororesin, silicon nitride, carborundum, silicon etc., but is not limited to
These.
In the plasma processing apparatus, by making high frequency electric IRFlowed to high frequency antenna 18, and in high frequency antenna
High frequency magnetic field is produced around 18, thus, with high frequency electric IROpposite direction produces induction field.Pass through the induced electricity
, in vacuum tank 2, electronics is accelerated and ionizes the gas 8 of the vicinity of high frequency antenna 18, so that in high frequency antenna 18
Neighbouring generation plasma (i.e. inductively type plasma) 30.The plasma 30 diffuses to the vicinity of substrate 10,
The processing is implemented to substrate 10 using the plasma 30.
And then, according to the plasma processing apparatus, by making high frequency electric IRFlowed to high frequency antenna 18 and in pair
Antenna 20 produces induced electromotive force, thus, even if slave antenna 20 is placed with left electrically floating state, induced-current (reference picture 3
(C) the induced-current I in2) it can also be present in the part of insulant 22 near the both ends of slave antenna 20 via Major Natural
Electrostatic capacitance flows to slave antenna 20.Flow through induction field caused by the induced-current of the slave antenna 20 and flow through high frequency antenna 18
High frequency electric IRCaused induction field cooperation, can produce inductively type plasma 30 good efficiency.Therefore, even if
In the case where extending high frequency antenna 18, it can also produce inductively type plasma 30 good efficiency.Its result is to extend
High frequency antenna 18 and easily tackle maximization of substrate 10 etc..For example, the length that can also apply to high frequency antenna 18 exceedes
2000mm situation.
Also, reason insulate cover body 24 by the high frequency antenna 18 of the part in vacuum tank 2 and the unification of slave antenna 20
Covering, therefore prevent from producing plasma between high frequency antenna 18 and slave antenna 20, even if producing plasma in vacuum tank 2
During body 30, the left electrically floating state of slave antenna 20 is also ensured that.And then, the charged particle in plasma 30 can be prevented to be incident to
High frequency antenna 18 and slave antenna 20, thus can suppress because caused by plasma 30 is incident to two antennas 18, antenna 20 etc. from
The rising of daughter current potential, and can suppress because two antennas 18, antenna 20 are reciprocity by the charged particle sputter in plasma 30
Gas ions 30 and substrate 10 produce the situation of metallic pollution (metal contamination).
Situation on that can produce the plasma 30, is carried out more detailed good efficiency hereinafter with reference to experimental result
Explanation.
In the plasma processing apparatus of composition shown in Fig. 1, the length of high frequency antenna 18 and slave antenna 20 is set to
1340mm, will be set to 25mm apart from D between two antennas 18, the surface of antenna 20, uses SiF4(silicon tetrafluoride gas) and N2Gas
The mixed gas of (nitrogen) supplies 13.56MHz high frequency electric I from high frequency electric source 26 to high frequency antenna 18 as gas 8R, lead to
Cross the induction field and inductively type plasma 30 is produced in vacuum tank 2, form SiN on the substrate 10：F film (fluorine
Change silicon nitride film).Moreover, the SiN will be determined：One of the result of the film forming speed of F films is used as (C) embodiment in Fig. 2
To represent.
Equivalent circuit around the antenna of the embodiment is shown in Fig. 3 (C).In addition, for simplified illustration, in Fig. 3
Eliminate the diagram of match circuit 28 (reference picture 1).
Moreover, in order to be compared with the embodiment, film forming speed when having unloaded the slave antenna 20 will be determined
As a result represented as (A) comparative example 1 in Fig. 2.Equivalent circuit around the antenna of the comparative example 1 is shown in Fig. 3
(A).The comparative example 1 is therefore existing equivalent to technology identical described in the patent document 1 because without slave antenna 20
Technology.And then, the result of film forming speed when determining the both ends ground connection for making the slave antenna 20 is used as (B) in Fig. 2 compare
Represented compared with example 2.Equivalent circuit around the antenna of the comparative example 2 is shown in Fig. 3 (B).In addition, comparative example 1 and comparing
In example 2, in addition on the part of slave antenna 20, the situation identical membrance casting condition with the embodiment is set to.
As shown in Fig. 2 the film forming speed of comparative example 1 is minimum.Moreover, compared with comparative example 1, the film forming speed of comparative example 2 increases
Add 1/10th or so.On the other hand, compared with comparative example 1 and comparative example 2, the film forming speed of embodiment is significantly increased.
Make the high frequency electric IRThe analysis of the behavior of the high frequency near high frequency antenna 18 when being flowed to high frequency antenna 18
It is not easy to, it is believed that the reasons why obtaining the measurement result is as described below.
In the case of the comparative example 1 shown in Fig. 3 (A), antenna is only high frequency antenna 18, if its length becomes as described
Grow, then its impedance Z1, especially its electrodynamic capacity L1Increase, and high frequency electric IRIt is difficult flowing, thus the density of plasma 30
It is small, therefore film forming speed is also small.
On the other hand, in the case of the embodiment shown in Fig. 3 (C), even if by slave antenna 20 with electrically quick condition
Place, electrostatic capacitance C2Also main naturally occurring respectively (even if be especially not provided with capacitor there is also) is in the two of slave antenna 20
The part of insulant 22 (reference picture 1) near end.Moreover, two electrostatic capacitance C2Connect via metal vacuum tank 2 etc.
Ground circuit and be connected in series between the both ends of slave antenna 20, and form closed circuit in the lump with slave antenna 20.In short, may be used
Think two electrostatic capacitance C2Value it is approximately equal to each other, two electrostatic capacitance C being serially connected2Synthesis electrostatic capacitance
C0It is expressed from the next.
[numerical expression 1]
C0=C2/2
By making high frequency electric IRFlowed from high frequency electric source 26 to high frequency antenna 18, and in the magnetic flux with thus being formed
In the slave antenna 20 of link, according to faraday (Faraday) law, the induced electromotive force V being expressed from the next is produced2.Herein, ω
For high frequency electric IRAngular frequency, M is mutual inductance between two antennas 18, antenna 20, and j is imaginary unit.
[numerical expression 2]
The resistance of slave antenna 20 generally ratio is by its electrodynamic capacity L2Caused reactance is much smaller, if therefore coming near using reactance
As represent comprising slave antenna 20 closed circuit impedance Z2, then the induced electromotive force V is passed through2, flow in slave antenna 20 by
The induced-current I that following formula is represented2。C0For the electrostatic capacitance of the synthesis shown in numerical expression 1.In addition, herein, by the high-frequency electrical shown in Fig. 3
Flow IRAnd faradic I2Direction be set to just.
[numerical expression 3]
The electrostatic capacitance C2It is to be mainly naturally occurring in the insulant near the both ends of slave antenna 20 as described
The electrostatic capacitance of 22 parts, thus it is generally small, therefore the electrostatic capacitance C of its synthesis0Also it is small.Therefore, the reactance in the numerical expression 3
(ωL2-I/ωC0) it is negative value, its result is, induced-current I2For on the occasion of.That is, as shown in Fig. 3 (C), flowed in slave antenna 20
High frequency electric I with flowing through high frequency antenna 18RThe induced-current I of equidirectional2。
If induced-current I2To with high frequency electric IRFlow in identical direction, then it is assumed that constitute the impedance Z of high frequency antenna 181
Inductance, compared with electrodynamic capacity L1Mutual inductance M is added, so that somewhat increase, but because generation flows through the height of high frequency antenna 18
Frequency electric current IRHigh frequency magnetic field and generation flow through the induced-current I of slave antenna 202High frequency magnetic field be equidirectional, flow through height
The high frequency electric I of frequency antenna 18RCaused induction field plays a role, to flow through the induced-current I of slave antenna 202It is caused
Induction field strengthens, therefore can produce inductively type plasma 30 good efficiency.Think after the result of the comprehensive effect,
The density of plasma 30 is significantly increased, and film forming speed is also significantly increased compared with comparative example 1, comparative example 2.
Also, in the case of all the described embodiments, it has been flexibly utilized by being naturally occurring in and has been placed with electrically quick condition
Slave antenna 20 both ends near the part of insulant 22 electrostatic capacitance C2, do not set especially and formed in the lump with slave antenna 20
Even the capacitor of closed circuit.Therefore, compared with the situation for setting capacitor, the reduction of parts count, assembling can be achieved and makees
Reduction of industry step etc..
On the other hand, in the case of the comparative example 2 shown in Fig. 3 (B), because being grounded the both ends of slave antenna 20, therefore not
There is the electrostatic capacitance C2, therefore the ω C of reactance 1/ in numerical expression 30For 0, so that induced-current I2For negative value.That is, slave antenna 20
In, induced-current I2To with the direction in opposite direction shown in Fig. 3 (B), i.e., to the high frequency electric I with flowing through high frequency antenna 18RPhase
Anti- direction flowing.And the induced-current I2Induced-current in the case of than the embodiment has increased.
If induced-current I2To with high frequency electric IROpposite direction flowing, then constitute the impedance Z of high frequency antenna 181Electricity
Sense is compared with electrodynamic capacity L1Mutual inductance M is added, and it is slightly smaller, thus, high frequency electric IREasily flowed to high frequency antenna 18, separately
On the one hand, the high frequency electric I of high frequency antenna 18 is flowed throughRCaused induction field plays a role, to flow through slave antenna 20
Induced-current I2Caused induction field weakens.Think after the result of the comprehensive effect, the density of plasma 30 not why
Increase, therefore, how film forming speed does not increase compared with comparative example 1 yet.
It is preferably to be set to the distance between the surface of high frequency antenna 18 and the surface of slave antenna 20 D referring again to Fig. 1
Below 25mm (is free of 0).In this way, two antennas 18, antenna 20 are closely, the following action effect is can further improve,
That is, the induced-current I by flowing through slave antenna 202Caused induction field and the high frequency electric I for flowing through high frequency antenna 18RCause
Induction field cooperation, produce inductively type plasma 30 good efficiency.And then, even if gas 8 enters to insulation
In cover body 24, the distance between two antennas 18, antenna 20 is small and the displacement of electronics is short, thus can prevent two antennas 18, antenna
Plasma is produced between 20, so that the left electrically floating state of slave antenna 20 is more certain.
Also the insulants such as resin can be partially filled with to beyond two antennas 18 in the insulation cover body 24, antenna 20.Such as
This, can more reliably prevent from producing plasma in insulation cover body 24.
Moreover, embodiment like that, also can be configured at insulation across space 23 as described for high frequency antenna 18 and slave antenna 20
In cover body 24.In this way, the current potential that can be suppressed the surface of insulation cover body 24 using the presence in the space 23 is risen, thus it can press down
The rising of the current potential of plasma 30 processed.
Also can be by bending slave antenna 20 etc., by described between high frequency antenna 18 and slave antenna 20 apart from D described
In the range of, for example in the range of 5mm~25mm, change on the long side direction of high frequency antenna 18.It so, it is possible to high frequency day
The Density Distribution of plasma 30 on the long side direction of line 18 is controlled, and to the density point for the film being formed on substrate 10
Cloth is controlled.
Also the high frequency antenna 18 covered by insulation cover body 24 and slave antenna 20 can be set to an antenna element, according to substrate
10 size etc., multiple antenna elements are set up in parallel on the direction on the surface along substrate 10.It so, it is possible to produce area
Bigger plasma 30, and the larger implementation of substrate 10 is handled.
[explanation of symbol]
2：Vacuum tank
8：Gas
10：Substrate
18：High frequency antenna
20：Slave antenna
22：Insulant
24：Insulate cover body
26：High frequency electric source
30：Plasma
Claims (3)
1. a kind of plasma processing apparatus, it is the plasma processing apparatus of inductively type, by making high frequency electric certainly
The high frequency antenna that high frequency electric source is vacuum exhausted and imported in the vacuum tank of gas to being configured at flows, and holds the vacuum
Induction field is produced in device and plasma is generated, substrate implementation is handled using the plasma, at the plasma
Reason device is characterised by including：
Slave antenna, is configured in the vacuum tank along the high frequency antenna, and its both ends is nearby across insulant by described
Vacuum tank is supported, and is placed with left electrically floating state；And
Insulate cover body, by the high frequency antenna of the part in the vacuum tank and the unified covering of the slave antenna.
2. plasma processing apparatus according to claim 1, wherein, by the surface of the high frequency antenna and the secondary day
The distance between surface of line is set to below 25mm (being free of 0).
3. plasma processing apparatus according to claim 1 or 2, wherein, the high frequency antenna and the slave antenna every
Space configuration in the insulating boot body.
Applications Claiming Priority (3)
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| JP2015-026254 | 2015-02-13 | ||
| JP2015026254A JP6603999B2 (en) | 2015-02-13 | 2015-02-13 | Plasma processing equipment |
| PCT/JP2016/052933 WO2016129437A1 (en) | 2015-02-13 | 2016-02-01 | Plasma processing device |
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| CN107251657B CN107251657B (en) | 2019-11-26 |
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| JP (1) | JP6603999B2 (en) |
| KR (1) | KR102020815B1 (en) |
| CN (1) | CN107251657B (en) |
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| CN112425269A (en) * | 2018-07-19 | 2021-02-26 | 日新电机株式会社 | Plasma processing apparatus |
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| JP7101335B2 (en) * | 2018-03-19 | 2022-07-15 | 日新電機株式会社 | Antenna and plasma processing equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1520245A (en) * | 2002-12-31 | 2004-08-11 | ��ķ�о�����˾ | Plasma processor appts. and method, and antenna |
| CN101460002A (en) * | 2002-07-22 | 2009-06-17 | 兰姆研究有限公司 | Method and apparatus for producing uniform processing rates |
| US20110104902A1 (en) * | 2009-10-27 | 2011-05-05 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| CN102056396A (en) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN102054649A (en) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN102737943A (en) * | 2011-03-30 | 2012-10-17 | 东京毅力科创株式会社 | Plasma processing apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3276514B2 (en) * | 1994-04-26 | 2002-04-22 | 東京エレクトロン株式会社 | Plasma processing equipment |
| KR100523851B1 (en) * | 2003-05-07 | 2005-10-27 | 학교법인 성균관대학 | Inductively Coupled Plasma Processing Appratus having internal linear antenna for large area processing |
| KR101591404B1 (en) | 2008-05-22 | 2016-02-03 | 가부시키가이샤 이엠디 | Plasma generating apparatus and plasma processing apparatus |
| JP5694721B2 (en) * | 2009-10-27 | 2015-04-01 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101460002A (en) * | 2002-07-22 | 2009-06-17 | 兰姆研究有限公司 | Method and apparatus for producing uniform processing rates |
| CN1520245A (en) * | 2002-12-31 | 2004-08-11 | ��ķ�о�����˾ | Plasma processor appts. and method, and antenna |
| US20110104902A1 (en) * | 2009-10-27 | 2011-05-05 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| CN102056396A (en) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN102054649A (en) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN102737943A (en) * | 2011-03-30 | 2012-10-17 | 东京毅力科创株式会社 | Plasma processing apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112425269A (en) * | 2018-07-19 | 2021-02-26 | 日新电机株式会社 | Plasma processing apparatus |
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| JP2016149287A (en) | 2016-08-18 |
| CN107251657B (en) | 2019-11-26 |
| KR20170102326A (en) | 2017-09-08 |
| TWI584343B (en) | 2017-05-21 |
| WO2016129437A1 (en) | 2016-08-18 |
| TW201630035A (en) | 2016-08-16 |
| JP6603999B2 (en) | 2019-11-13 |
| KR102020815B1 (en) | 2019-09-11 |
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