201212728 四、指定代表圖： )本案指定代表圖為 :第（1 )圖。 )本代表圖之元件符號簡單說明： 10〜電漿處理裝置； 1卜真空容器； 12〜基體保持部； 13~第1氣體排出口； Μ〜第1氣體導入口 ， 15〜基體搬出入口； 20〜天線單元； 21〜介電質框體； 22〜蓋件； 23〜高頻天線； 2 4〜聯通線； 25~第2氣體排出口； 26〜真空密封件； 111~上壁； 211 '•凸緣部； 23卜第2氣體導入口 232〜氣體通過孔； 111卜開口部； S〜基體。 五、 本案若有化學式時，請揭示最能顯示發明特徵的化學式： fe 0 六、 發明說明： 【發明所屬之技術領域】 本發明係有關於-種可用在基板表面處理等之感應輕 合型電漿處理裝置。 【先前技術】 自以往以來’為了進行在基板上形成薄膜的製膜處 201212728 理、或對基板進行的敍刻處理，而使用電漿處理裝置。在 電漿處理裝置係有：藉由由對電極間施加高頻電壓所產生 的電磁％來生成電漿的電容耦合型電漿處理裝置、或藉由 由在南頻天線（線圈）流通高頻電流所產生的電磁場來生成 電漿的感應耦合型電漿處理裝置等。#中，電容耦合型電 漿處理裝置係具有襞置成本比感應耦合型為更低的特長， 另方面感應耦合型電漿處理裝置由於比電容耦合型可 生成更高密度的電漿，因此具有製膜速度快的特長。 在感應耦合型電漿處理裝置中，大部分使用將用以生 成感應電磁場的高頻天線配置在真空容器外側的外部天線 方式。但是，近年來’被處理基板及形成在其上的薄膜的 大面積化不斷進展，伴隨此，真空容器呈大型化，基於真 :4益内外的麼力差的關係’真空容器的壁部會變厚。藉 匕被導入至真空容器内的感應電磁場的強度會變小，而 會產生所生成電漿的密度降低的問題。 相對於此，在專利文獻1所記載之感應耦合型電漿處 襄置中’係使用將高頻天線設在真空容器内部的内部天 ，曰 ' 纟内部天線方式中，並不依存真空容器之壁部的 厚度而可輕易地提高電漿密度，因此適於被處理基板及薄 骐的大面積化。 是s將尚頻天線設在真空容器内部時，會發生裝 、保養檢查變知較不容易的問題。通常，高頻天線係為 之方止因在天線導體流通高頻電流以致的加熱及因此以致 抗的上升，而使用在内部具有空洞的管狀導體管，藉 201212728 由在該導體管的内部流通冷媒，來進 m 古介— 丁天線導體的冷卻。 因此，真·Χ·谷器與高頻天線的連接 扯必邮^ Α 等體官件端部與冷媒 供·，·。4 .排出邛的連接變得較為複* 间頻天線的設置或 卸除即變得較為困難。 ％日7 c又直：¾ 此外’亦會有高頻天線被直 ^^ , 且丧噼路在電漿的問題。在 感應H的電聚處理裝置中’纟高頻天線與電聚之間會 =厂直流的自偏壓電麼。在外部天線方式中1由該自偏 壓電壓所被加速的離子係祜直*交哭Μ 』雕卞係破真工谷益的壁部所遮蔽，但是 在内部天線方式中，天線導體會被濺鍍。 為了防止該情形，在專利文獻2所記載之發明中，係 將面頻天線的導體表面，利用由不县出工必，兹 ' • 即扪用由不易由天線導體被濺鍍的 陶曼或石英等所構成的介電f (絕緣體）製管件予以被覆來 進行。但是’配合天線形狀來加工介電質管件時，係必須 要=高度技術與高製造成本。此外，如上所述，藉由在導 體管内部流通冷媒來進行天線導體之冷卻時，亦會有介電 質管件在未被充分冷卻的情形下直接達至數百。c等非常高 的溫度的情形。因此，因熱應力而使介電質管件變得心 破相’並且因來自介電質管件之熱的傳播而使天線導體亦 未被充分冷卻，而使天線導體的阻抗上升而無法安定供給 電漿。 u (先前技術文獻） (專利文獻） (專利文獻1)曰本特開平7_18433號公報 (專利文獻2)日本特開2〇〇卜035697號公報 4 201212728 【發明内容】 (發明所欲解決之課題） 本發明所欲解決之課題在廉價提供一種保養檢查容 易、且可安定供給電漿之内部天線方式的電漿處理裝置。 (用以解決課題的手段） 為了解決上述課題所研創之本發明之電漿處理裝置， 其特徵在於包括： a) 真空容器； b) 以比前述真空容器的内壁更突出於内側的方式而設 的咼頻天線；及 〇用以將前述高頻天線由前述真空容器内部的雾圍氣 作隔離之與該高頻天線非接觸地作設置的介電質製框體。 在本發明之電製處理裝置中，可藉由介電質製框體來 防止内部天線方式的高頻天線被賤鍍。該框體係不需要如 介電質管件般配合高頻天線的形狀來進行，可形成為較為 容易製造的形狀，因此可將製造成本抑制為較低。此外， 亦具有對於任何天線形狀均可使用相同形狀者的優點。此 外，藉由將高頻天線與框體形成為非接觸，可防止藉由在 天線導體流通高頻電流所產生的熱在框體直接傳播9 制框體的溫度上升。 本發明之電漿處理裝置係以具有：將被設在前述真* 容器之内壁的前述介電質框體的内部與該真空容器的外: 相連通的天線插入開口、及將前述天線插入開口封閉的蓋 201212728 件為宜。藉此，由於可通過天線插入 』 木瑕卸咼頻天線， 因此裝置的保養檢查變得較為容易。 ^ 叫'’以前述高頻天 線被安裝在前述蓋件為更佳。藉此， 1重稭由裝卸蓋件，即 可輕易地將高頻天線取出放入。 較佳為前述介電質框體的内部係以惰性氣體所充滿， 或為真空’或以固體的介電質所充滿 狀態。藉此， 可防止在介電質框體内產生不必要的放電。 較佳為前述高頻天線係由可在内部流通冷卻用媒體的 官狀導體官所構成。藉此’可抑制因高頻電流流通以致天 線導體的加熱及因此以致之阻抗的上升。 此外’當前述冷媒為惰性氣體時，在本發明之電衆處 理裝置中，係可採用包括：設在前述導體管之被收容在前 述介電質框體内之部分的管壁的翁 刀刃s芏的乳體通過孔；及將由前述 氣體通過孔流出至前述介雷哲拍_ & 月j疋；丨電質框體内的前述惰性氣體排出 至該：電質框體及前述真空容器之外部的氣體排出孔的構 成。精此，可將介電質框體内以惰性氣體充滿，可防止在 介電質框體内發生不必要的放電，並且可藉由由内外將導 體管冷卻，而可防止天線導體的阻抗上升，可安定地供給 電水it匕外’由於亦可同時冷卻介電質框體目此可防止 因熱應力以致介電質框體發生的破損。 在刚述尚頻天線係可使用在形狀的一部分包含u字形 或3字形的線狀導體。ϋ字形或〕字形導體係具有平行排 列的2條直線部’若在導體流通電流，流至該2條直線部 的電抓方向為1 80不同。藉此，由流至各個直線部的電 6 201212728 流所發生的磁力線的方向會在2條直線部之間的區域相一 致’因此可加大該區域中之磁場的強度及電漿密度。 本發明之電漿處理裝置係可包括複數個前述高頻天線 及介電質框體。藉此，可在真空容器内的各部沒有遺漏地 形成電漿’可提高電漿密度的均一性。 (發明效果） 藉由本發明之電槳處理裝置，將在真空容器的内部空 間突出而設的高頻天線’以與該高頻天線為非接觸的介電 質製框體所包圍’藉此不會依存高頻天線的形狀，而可防 止高頻天線導體被濺鍍。該介電質框體相較於介電質管 件，其形狀較為單純，因此製造容易，可將製造成本抑制 為較低。此外’藉由設置將介電質框體與真空容器的外部 相連通的天線插入開口、及將該天線插入開口封閉的蓋 件，可輕易進行高頻天線之保養檢查。此外，藉由將介電 質框體内以惰性氣體充滿，而使該惰性氣體作循環，可防 止在介電質框體内發生不必要的放電，並且可防止天線導 體的溫度上升。藉此，可安定供給電漿。 【實施方式】 使用第1圖〜第8圖，說明本發明之電漿處理装 施例。 (實施例1) 首先，針對第i實施例之電漿處理裝置10加以說明。 如第1圖（a)所示，電漿處理裝置1〇係具有：真空容器11. 201212728 配置在真允交# Ί ·! 4益11内的基體保持部12;設在真空容器11 之側J的第1氣體排出口 13及第1氣體導入口 14;及設 置複數個在真空容器11之上壁111的天線單it 2G。第1 氣體排出σ u係與真空泵相連接，藉由真空泵，真空容器 11 内的空 ϋ _ 孔4水洛軋專由第1氣體排出口 1 3被排出，藉 此使真空交1 1 , 谷15 11内形成為高真空狀態。第1氣體導入口 14 /系用u在真空容器11内導入氫氣等電漿生成氣體或原 料孔體者。被基體保持部丨2所保持的基體s係由被設在真 工今器11之側壁的基體搬出入口 15被搬入至真空容器11 内，或由直介令as !, 兴二谷盗11内被搬出。基體搬出入口 15係除了 基體S搬出入時以外’呈氣密式封鎖。 接著，針對天線單元20加以說明。如第1圖（b)所示， 天線單& 20係'包括由介電質製的壁部所成的直方體狀介 電質忙體21。介電質框體21係具有凸緣部211與蓋件22, 由真二谷器11的外側，被插入在設於該真空容器丨1之上 壁111的開口部111卜以凸緣部211扣上開口部m 1之 邊緣的方式被女裳在上壁1丨丨。此外在凸緣部2丨丨與上 壁111之間、及凸緣部211與蓋件22之間設有真空密封件 26 ’使得由各自之間不會發生氣體漏洩。其中，以構成框 體21的介電質材料而言，可使用金屬氧化物、氮化物、碳 化物氟化物等。此外，在該等材料之中，可適當使用石 奂氧化鋁、氧化鍅、氧化纪、氮化石夕、ί炭化矽。 在介電質框體21的内部配置有由^字形導體所成的 向頻天線23，透過用以確保高頻天線23與蓋件22之間的 8 201212728 氣密性與電性絕緣的聯通線（feedthr〇ugh)24，口字形導體 的兩端附近被固定在蓋件22。口字形導體的其中_端係連 接於高頻電源’另一端係作接地。口字形導體呈管狀，在 f的兩端設有用以在管内導入惰性氣體的第2氣體導入口 231。此外’在管壁之中呈〕字的外側，亦即與介電質框體 21的介電質壁部相對向之側，設有將管内的惰性氣體送出 至介電質框體21内的氣體通過孔232。在蓋件22設有將 介電質框體21内的惰性氣體或惰性氣體以外的殘留氣體 (二氣）排出至介電質框體Η外的第2氣體排出口 25。藉 由該等構成’形成有由第2氣體導入口 23卜經由導體管、 氣體通過孔232 '介電質框體21至第2氣體排出口巧的 氣體流路。 ' ^在本實施例中，將介電質框體21的内部尺寸形成為： 冰度（第1圖⑻的縱方向）5cm、長邊（第丨圖⑻的橫方 向）⑽、短邊（與包含,字的面呈垂直的方向儿^。、 頻天線23之〕字形導體的底部係長度為—，在 質框體21之底部之間空出。._之空間的方式作配置。〕 字形導體的外徑為6.4mm。 將第i實施例之電毁處理裝置1〇的動作，以在201212728 IV. Designated representative map: ) The representative representative of the case is: (1). The symbol of the representative figure is briefly described: 10~ plasma processing device; 1 vacuum container; 12~ substrate holding portion; 13~ first gas discharge port; Μ~1st gas inlet, 15~ substrate moving out port; 20~ antenna unit; 21~ dielectric frame; 22~ cover member; 23~ HF antenna; 2 4~ Unicom line; 25~ second gas discharge port; 26~vacuum seal; 111~ upper wall; '•Flange portion; 23 second gas introduction port 232 to gas passage hole; 111 opening portion; S to base body. 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: fe 0 VI. Description of the invention: [Technical field of the invention] The present invention relates to an inductive light-weight type that can be used for surface treatment of substrates and the like. Plasma processing unit. [Prior Art] Conventionally, a plasma processing apparatus has been used to perform a film forming process for forming a thin film on a substrate or to perform a dicing process on a substrate. The plasma processing apparatus includes a capacitive coupling type plasma processing apparatus that generates plasma by applying electromagnetic % generated by applying a high-frequency voltage between the electrodes, or by circulating a high frequency in a south frequency antenna (coil) An inductively coupled plasma processing apparatus that generates an electric field by an electromagnetic field generated by a current. #中, Capacitive-coupled plasma processing equipment has a lower cost than the inductive coupling type, and the inductively coupled plasma processing device can generate a higher density plasma than the capacitive coupling type. The ability to make film speed is fast. In the inductively coupled plasma processing apparatus, most of the external antennas in which the high frequency antenna for generating the induced electromagnetic field is disposed outside the vacuum vessel are used. However, in recent years, the large area of the substrate to be processed and the film formed thereon has been increasing, and the vacuum container has been enlarged, and the wall portion of the vacuum container is based on the relationship between the difference between the inside and the outside. Thicken. The intensity of the induced electromagnetic field introduced into the vacuum vessel by the crucible becomes small, and there is a problem that the density of the generated plasma is lowered. On the other hand, in the inductively coupled plasma device described in Patent Document 1, the internal antenna is used to set the high-frequency antenna inside the vacuum container, and the internal antenna method does not depend on the vacuum container. Since the thickness of the wall portion can easily increase the plasma density, it is suitable for a large area of the substrate to be processed and the thin film. When s is installed in the inside of the vacuum container, the problem that the loading and maintenance inspection becomes less easy will occur. Usually, the high-frequency antenna is used to stop the heating of the high-frequency current flowing through the antenna conductor and thus the rise of the resistance, and the tubular conductor tube having a cavity inside is used. By 201212728, the refrigerant flows through the inside of the conductor tube. , to enter the m ancient - Ding antenna conductor cooling. Therefore, the connection between the true Χ························································· 4. The connection of the discharge port becomes more complicated. * The setting or removal of the inter-frequency antenna becomes more difficult. % 7 c straight and 3⁄4 In addition, there will be a problem that the high-frequency antenna is directly ^^, and the road is lost in the plasma. In the electro-convergence processing device that senses H, the high-frequency antenna and the electric current will be the self-bias voltage of the factory DC. In the external antenna mode, the ion system accelerated by the self-bias voltage is obscured by the wall, but in the internal antenna mode, the antenna conductor is Sputtering. In order to prevent this, in the invention described in Patent Document 2, the surface of the conductor of the area frequency antenna is used by the non-prefecture, and it is necessary to use the Taman or the sputter which is not easily sputtered by the antenna conductor. A dielectric f (insulator) pipe made of quartz or the like is covered. However, when the dielectric tube is processed in accordance with the shape of the antenna, it is necessary to have a high degree of technology and a high manufacturing cost. Further, as described above, when the cooling of the antenna conductor is performed by circulating the refrigerant inside the conductor tube, the dielectric tube member may directly reach several hundreds without being sufficiently cooled. c is a very high temperature situation. Therefore, the dielectric tube becomes destructive due to thermal stress and the antenna conductor is not sufficiently cooled due to the heat propagation from the dielectric tube member, so that the impedance of the antenna conductor rises and the plasma cannot be stably supplied. . (Patent Document 1) (Patent Document 1) Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. 035697 (Patent Document 2). The problem to be solved by the present invention is to provide a plasma processing apparatus which is easy to maintain and inspect and which can stably supply an internal antenna of the plasma. (Means for Solving the Problem) The plasma processing apparatus of the present invention, which has been developed to solve the above problems, includes: a) a vacuum container; b) a system that protrudes more inward than an inner wall of the vacuum container And a dielectric frame for disposing the high frequency antenna in a non-contact manner with the high frequency antenna by isolating the mist surrounding the vacuum container. In the electric processing apparatus of the present invention, the internal antenna type radio-frequency antenna can be prevented from being plated by the dielectric material frame. This frame system does not need to be formed in the shape of a high-frequency antenna as in the case of a dielectric tube member, and can be formed into a shape which is relatively easy to manufacture, so that the manufacturing cost can be suppressed to be low. In addition, it has the advantage that the same shape can be used for any antenna shape. Further, by making the high-frequency antenna and the casing non-contact, it is possible to prevent the temperature of the casing 9 from directly propagating in the casing by the heat generated by the high-frequency current flowing through the antenna conductor. The plasma processing apparatus of the present invention has an antenna insertion opening that communicates with the outside of the vacuum container provided inside the dielectric housing of the inner container, and inserts the antenna into the opening. A closed cover 201212728 is preferred. In this way, since the antenna can be inserted through the antenna, the maintenance inspection of the device becomes easier. ^ 叫'' is preferably mounted on the aforementioned cover member with the aforementioned high-frequency antenna. Thereby, the high-frequency antenna can be easily taken out by attaching and detaching the cover member. Preferably, the interior of the dielectric frame is filled with an inert gas, or is vacuumed or filled with a solid dielectric. Thereby, unnecessary discharge can be prevented from occurring in the dielectric frame. Preferably, the high-frequency antenna is constituted by an official conductor that can circulate a cooling medium therein. Thereby, it is possible to suppress the heating of the antenna conductor due to the high-frequency current flowing, and thus the rise of the impedance. Further, when the refrigerant is an inert gas, in the electric consumer processing apparatus of the present invention, it is possible to include a blade edge s provided in a wall of a portion of the conductor tube housed in the dielectric casing. The emulsion of the sputum passes through the hole; and the gas is discharged from the gas through the hole to the aforementioned squirrel _ _ &; 疋 疋 前述 前述 前述 前述 前述 前述 前述 前述 前述 前述 前述 前述 前述 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性The structure of the external gas discharge hole. In this case, the dielectric body can be filled with an inert gas to prevent unnecessary discharge in the dielectric frame, and the conductor can be prevented from rising by cooling the conductor tube from inside and outside. It is possible to supply the electro-hydraulic water in a stable manner. It is also possible to prevent the damage of the dielectric frame due to thermal stress by simultaneously cooling the dielectric frame. A linear conductor including a U-shape or a 3-shape in a part of the shape can be used in the just-described antenna system. The U-shaped or U-shaped guide system has two straight portions arranged in parallel. If the current flows through the conductor, the electric catching direction to the two straight portions is different from 1 to 80. Thereby, the direction of the magnetic lines of force generated by the flow of electricity to the respective straight portions 6 201212728 is uniform in the region between the two straight portions. Therefore, the strength of the magnetic field and the plasma density in the region can be increased. The plasma processing apparatus of the present invention may comprise a plurality of the aforementioned high frequency antennas and a dielectric frame. Thereby, the plasma can be formed without missing portions in the vacuum container to improve the uniformity of the plasma density. (Effect of the Invention) According to the electric paddle processing device of the present invention, the radio-frequency antenna 'provided in the internal space of the vacuum container is surrounded by a dielectric frame that is not in contact with the radio-frequency antenna. Depending on the shape of the HF antenna, the high frequency antenna conductor can be prevented from being sputtered. Since the dielectric frame has a simpler shape than the dielectric tube, it is easy to manufacture and can suppress the manufacturing cost to be low. Further, the maintenance of the radio-frequency antenna can be easily performed by providing an antenna insertion opening that connects the dielectric casing to the outside of the vacuum vessel and a cover that closes the antenna insertion opening. Further, by circulating the inert gas in the dielectric casing, the inert gas is circulated, thereby preventing unnecessary discharge in the dielectric casing and preventing the temperature rise of the antenna conductor. Thereby, the plasma can be supplied stably. [Embodiment] A plasma processing apparatus of the present invention will be described using Figs. 1 to 8 . (First Embodiment) First, a plasma processing apparatus 10 of an i-th embodiment will be described. As shown in Fig. 1(a), the plasma processing apparatus 1 has a vacuum vessel 11. 201212728 is disposed in the substrate holding portion 12 in the true-to-be-following area, and is provided on the side of the vacuum container 11. The first gas discharge port 13 and the first gas introduction port 14 of J; and a plurality of antenna sheets it 2G provided on the upper wall 111 of the vacuum container 11. The first gas discharge σ u is connected to the vacuum pump, and the air pump _ hole 4 in the vacuum vessel 11 is exclusively discharged from the first gas discharge port 13 by the vacuum pump, thereby making the vacuum 1 1 , valley 15 11 is formed into a high vacuum state. The first gas introduction port 14 / is used to introduce a plasma generating gas such as hydrogen or a raw material pore into the vacuum vessel 11. The base s held by the base holding portion 丨2 is carried into the vacuum container 11 by the base carry-in/out port 15 provided on the side wall of the real machine 11, or by the direct order as !, Xing Er Gu Pi 11 Move out. The base carry-in/out port 15 is airtightly sealed except when the base body S is moved in and out. Next, the antenna unit 20 will be described. As shown in Fig. 1(b), the antenna single & 20 series 'includes a rectangular parallelepiped dielectric body 21 made of a dielectric wall portion. The dielectric housing 21 has a flange portion 211 and a cover member 22, and is inserted into the opening portion 111 provided in the upper wall 111 of the vacuum container 丨1 by the outer side of the true yoke 11 to buckle the flange portion 211. The manner of the edge of the upper opening m 1 is taken by the female skirt on the upper wall. Further, a vacuum seal 26' is provided between the flange portion 2A and the upper wall 111, and between the flange portion 211 and the cover member 22 so that gas leakage does not occur between them. Among them, as the dielectric material constituting the frame 21, a metal oxide, a nitride, a carbide fluoride or the like can be used. Further, among these materials, cerium alumina, cerium oxide, oxidized particles, cerium nitride, and cerium lanthanum can be suitably used. A directional antenna 23 formed of a chevron conductor is disposed inside the dielectric housing 21, and a communication line for ensuring airtightness and electrical insulation between the HF antenna 23 and the cover member 22 is ensured. (feedthr〇ugh) 24, the vicinity of both ends of the square-shaped conductor is fixed to the cover member 22. The _ terminal of the mouth-shaped conductor is connected to the high-frequency power supply, and the other end is grounded. The square-shaped conductor has a tubular shape, and a second gas introduction port 231 for introducing an inert gas into the tube is provided at both ends of f. Further, the outer side of the pipe wall is formed on the outer side of the pipe wall, that is, the side opposite to the dielectric wall portion of the dielectric casing 21, and the inert gas in the pipe is sent out to the dielectric casing 21. Gas passes through the aperture 232. The lid member 22 is provided with a second gas discharge port 25 for discharging the residual gas (two gases) other than the inert gas or the inert gas in the dielectric housing 21 to the outside of the dielectric housing. The gas flow path formed by the second gas introduction port 23 through the conductor pipe and the gas passage hole 232' dielectric casing 21 to the second gas discharge port is formed by the above configuration. In the present embodiment, the internal dimensions of the dielectric frame body 21 are formed as follows: iceness (longitudinal direction of Fig. 1 (8)) 5 cm, long side (lateral direction of Fig. 8), and short sides (10) The length of the bottom of the glyph conductor of the frequency antenna 23 is -, and is vacant between the bottom of the mass frame 21. The space of the space is configured. The outer diameter of the glyph conductor is 6.4 mm. The action of the electro-destruction processing device 1 of the i-th embodiment is
上堆積製臈物質的情形為例加 S I μ ^ , j加以說明。首先，將基體S由 基體搬出入口 15搬入至真空容器η内，而載置於基體： 持部12之上。接著，將暮㈣㈠ 興罝於基體保 孓，將直办 體瓜出入口 15封閉’使用真空 系，將真空容器11内的空工 u排出s β *氣等由第1氣體排出口 ^排出。另一方面，由第2盏触，龄 虱體導入口 231透過導體管及 9 201212728 氣體通過孔232而在介電質框體21内導入惰性氣體。藉 此，介電質框體21内的空氣被置換成惰性氣體，空氣及剩 餘的惰性氣體由第2氣體排出口 25被排出至介電f框體 21外。 札瓶等入 接著，保持繼續供給惰性氣 導入電漿生成用氣體及原料氣體，在高頻天線23投入高頻 電力°藉由該高頻電力的投入’在高頻天線23的周圍生成 感應電磁場。該感應電磁場係通過介電質框體21的壁部而 被導入在真空容器11内，而將電漿生成用氣體作電離。藉 此生成電漿。連同電漿生成用氣體一起被導入在真空容器 11内的原料氣體係藉由電漿予以分解而堆積在基體5上。 在高頻天線23被投入高頻電力的期間，惰性氣體係通 過導體管而由氣體通過孔232被喷吹在介電質框體21的介 電質壁部。藉此，惰性氣體係具有作為抑制藉由高頻電力 的供給所產生的高頻天、線23 &介電質壁部的溫度上升的 冷媒的作用。 在本實施例之電漿處理裝置1〇中，由於在突出於真空 容器11内的介電質框體21内配置有高頻天線23，因此可 在真工令器i i内生成比外部天線方式的情形下為更強的 感應電磁場。此外，藉由介電質框體21的壁部高頻天练 23由真工谷窃"内被分離，因此電漿將高頻天線㈡進行 :刻’可防止高頻天線23的壽命變短、或防止在薄膜或祐 處理基體混入高頻天線23的材料成為雜質。 此外，由第2氣體導入口 231透過導體管及氣體通過 10 201212728 孔232而在介電質框體21内導入惰性氣體，藉此使介電質 框體21内被h性軋體所充滿，因此可防止發生不必要的放 電，並且亦可將惰性氣體作為冷媒而將高頻天線23進行冷 卻。如上所示，在本實施例之電漿處理裝置1〇中，係藉由 1個氣體供給手& ’可進行放電的防止措施與高頻天線23 及介電質框體21的冷卻措施等雙方，因此可簡化裝置。 進行使用本實施例之電漿處理裝置1〇而生成電漿的 實驗。在本實驗中，係由第i氣體導入口 14在真空容器 11内，以壓力成為1Pa的方式導入氬與氫的混合氣體（電 漿生成氣體），並且由第2氣體導入口 231，將每分2.5公 升的氮氣（惰性氣體）導入至導體管及介電質框體21内。接 著，在高頻天線23供給頻率ι3·56ΜΗζ、輸出lkw的高頻 電力。在充分經過時間後，在離介電質框體21的底部i〇cm 下方進行測定，結果確認出生成有密度h 2xl〇llcm_3的電 漿。電t密度係與㉟口字料體的底冑的㈣大致呈反 比此外，當使尚頻電力的輸出在1〜3kf的範圍内產生變 化時，電漿密度係與高頻電力的輸出大致呈正比而變化（第 2圖）。高頻天線23及介電質框體21係均藉由利用惰性氣 體予以冷卻’可將溫度保持在8(rc以下。 (實施例2) 在第1實施例之電漿處理裝置1〇中，如第3圖所示， 將第2氣體排出口 25與第2氣體導入口 231以連接管π 相連接，可在兩者之間設置栗及熱交換機28。在此，與高 頻電源側相連接的第2氣體導入〇 231與連接f Μ係在兩 201212728 者之間介插絕緣體、或將連拯 接營27形成為絕緣體製，藉此 作電性絕緣。#由如错此 0, 疋構成，將由第2氣體排出口 25被排出的惰性氣體以 s ^ 父換機28進行冷卻，可再次導 入至第2氣體導入口 231，因屮叮找味 味^ 因此可使惰性氣體作循環而反 覆利用。此外，在優奏去由 在優先考慮到經濟性的情形下，亦可作為 冷卻氣體而使大氣作循環。 (實施例3) 〇在第1實施例之電聚處理裝置10中，亦可以將真空容 益11的開口彳1 i i i由下側覆蓋的方式安裝介電質框體 21以將開口部1111由上側覆蓋的方式安裝蓋件22(第4 圖⑷)。此時’將介電質框體21的凸緣部2ΐι固定在上壁 111的下面’將蓋件22固定在上壁lu的上面。或者，亦 可在不具開口部的上壁U1的下面安裝介電質框體21(第4 圖（b))。此時，高頻天線23係固定在上壁ιη。此外，並 不需要蓋部。 (實施例4) 介電質框體21内，亦可使用真空泵而由第2氣體排出 口 25將氣體進行排氣，藉此形成為真空，來取代以惰性氣 體充滿（第5圖（a))。此時，氣體通過孔232雖未設置，但 是為了高頻天線23的冷卻，以將高頻天線23形成為導體 管製而在管内流通冷卻氣體或冷卻水等冷媒為宜。藉由該 構成’與使用惰性氣體的情形同樣地，可防止在介電質框 體21内的放電’並且可將高頻天線23與介電質框體21之 壁部之間絕熱’因此可防止介電質框體21的溫度上升。 12 201212728 或者，亦可將介電質框體21内以固體的介電質材μ 所充滿（第5圖（b))。介電質材29可為塊體者，亦可為粉 末。若使用粉末時，以空氣不會侵入粉末的間隙的方式7 將介電質框體21内作密閉。在介電f材29的材料係可使 用聚四氟乙烯（PTFE)、聚醚醚酮（pEEK)等樹脂、氧化鋁、 氧化矽等陶瓷等。藉由介電質材29，可防止在介電質框體 21内的放電。此時亦為了高頻天線23的冷卻，以將高頻 天線23形成為導體管製而在管内流通冷卻氣體或冷卻水 等冷媒為宜。 (實施例5) 接箸，說明使用具有不同形狀的高頻天線23A之例（第 6圖）。本實施例之電漿處理裝置係除了高頻天線23a的形 狀、及開口部1111A、介電質框體21A及蓋件22A的大小 以外，具有與第1實施例之電漿處理裝置1 〇相同的構成。 高頻天線23A係具有：由蓋件22朝下方延伸的2條腳3ιι; 具有U字形形狀，以u字所形成的面與框體21八的底面成 為平行（與高頻天線23A朝向真空容器u的插入方向呈垂 直）的方式作配置的U字部312;及將U字部312的其中— 端與腳311的其中一方相連接，將u字部312的另—端與 腳311的另一方相連接的2個彎曲部313。 在本實施例中，將U字部312所具有的2條直線部（第 1直線部3121、第2直線部3122)的長度設為1〇cm，將第 1直線部3121及第2直線部3122中的導體間的間隔設為 3cm。其中，在此所稱之「導體間的間隔」係指平行排列的 13 201212728 2條導體的内側彼此的距離。介電質框體2U係配合高頻 天線23A的形狀，内部的短邊形成為比第i實施例的介電 質框體21為長的6cm。介電質框體21A内部的深度及長邊 的長度係與第1實施例的介電質框體2丨相同。開口部i丨丨】A 及蓋件22A的大小亦配合介電質框體21A之内部的短邊， 關於該短邊的方向，形成為比第丨實施例為大。 在具有第6圖之形狀的高頻天線23A中，在與框體21A 的底面平行配置的第i直線部3121及第2直線部3122中， 高頻電流會彼此朝相反方向流通，因此在框體2U的正下 方，藉由在第1直線部3121流通的電流所形成的磁場的上 下方向成分、與藉由在第2直線部3丨22流通的電流所形成 的磁場的上下方向成分，係以同相位振動，可將框體2 ^ A 之下方中的磁場強度形成為由第丨〜第4實施例者為約2 倍，因此可以較小的高頻電力而使放電電漿發生，並且即 使為不易發生放電之例如〇. 5pa以下之氣體壓力區域，亦 可使放電電漿安定發生。 在本實施例之電漿處理裝置中，以與第丨實施例相同 條件進行實驗。亦即，一面將氬與氫的混合氣體以壓力成 為1 Pa的方式導入至真空容器丨丨内，並且由第2氣體導入 口 231將每分2.5公升的氮氣導入至導體管及介電質框體 21内，一面在高頻天線23A供給頻率56MHz、輪出lkw 的馬頻電力。在充分經過時間後，在離介電質框體21的底 部l〇cm下方進行測定，結果電漿密度係獲得18χ1〇11^3 之比第1實施例（1.2x1 (Tcm-3)為更高的值。 14 201212728 ’、中 在本實施例中係將υ字形為例加以說明，可將 U字部312的部分與第1〜第4實施例同樣地置換成口字， 亦可置換成如第7圖所示之S字部312 Α。此外亦可使用Ν 字形或Μ字形等形狀。 此外’在本實施例之高頻天線23Β中，若將U字部312 的。I5分置換成一般所使用的圓形天線導體時，若將其半徑 。又為r、將所施加的電流設為I，則在中心部所發生的磁場 強度Η〇係以下式表示。 H〇=I/(2r) 另一方面’如本實施例般使用U字形天線導體時，若 將2條直線部中之導體間的間隔設為d，中心部的磁場強 度Hh係以下式表示。The case where the bismuth material is deposited is described by adding S I μ ^ , j . First, the substrate S is carried into the vacuum container n from the substrate carry-in/out port 15 and placed on the substrate: holding portion 12. Next, the 暮(4)(1) is placed on the base body, and the direct opening and closing of the body melon 15 is closed. The vacuum is used to discharge the airwork u in the vacuum container 11 from the first gas discharge port. On the other hand, the inert gas is introduced into the dielectric casing 21 through the conductor tube and the 9201212728 gas passage hole 232 by the second contact. Thereby, the air in the dielectric frame 21 is replaced with an inert gas, and the air and the remaining inert gas are discharged from the second gas discharge port 25 to the outside of the dielectric f frame 21. Then, the inert gas is supplied to the plasma generating gas and the material gas, and the high frequency power is supplied to the high frequency antenna 23. The induction electromagnetic field is generated around the high frequency antenna 23 by the input of the high frequency power. . The induced electromagnetic field is introduced into the vacuum vessel 11 through the wall portion of the dielectric casing 21, and the plasma generating gas is ionized. This produces plasma. The raw material gas system introduced into the vacuum vessel 11 together with the gas for generating plasma is decomposed by the plasma and deposited on the substrate 5. While the high-frequency antenna 23 is being supplied with the high-frequency power, the inert gas system is blown into the dielectric wall portion of the dielectric casing 21 through the gas passage hole 232 through the conductor tube. As a result, the inert gas system functions as a refrigerant that suppresses the increase in the temperature of the high-frequency days, the line 23 & the dielectric wall portion generated by the supply of the high-frequency power. In the plasma processing apparatus 1 of the present embodiment, since the high-frequency antenna 23 is disposed in the dielectric housing 21 protruding from the inside of the vacuum container 11, the external antenna can be formed in the real actuator ii. In the case of a stronger induced electromagnetic field. In addition, since the wall portion of the dielectric frame body 21 is separated by the ergonomics, the high frequency antenna (2) is performed by the plasma to prevent the life of the HF antenna 23 from becoming short. Or preventing the material mixed into the high frequency antenna 23 in the film or the processing substrate from becoming an impurity. Further, the second gas introduction port 231 passes through the conductor tube and the gas passes through the hole 10 of 127, 2012, and the inert gas is introduced into the dielectric frame body 21, whereby the dielectric frame body 21 is filled with the h-shaped rolled body. Therefore, unnecessary discharge can be prevented from occurring, and the high frequency antenna 23 can be cooled by using an inert gas as a refrigerant. As described above, in the plasma processing apparatus 1 of the present embodiment, the prevention measures for discharging can be performed by one gas supply & ', and the cooling measures of the high-frequency antenna 23 and the dielectric housing 21 are performed. Both sides can therefore simplify the device. An experiment of generating plasma using the plasma processing apparatus 1 of the present embodiment was carried out. In the present experiment, a mixed gas of argon and hydrogen (plasma generating gas) is introduced into the vacuum vessel 11 by the i-th gas introduction port 14 so that the pressure becomes 1 Pa, and the second gas introduction port 231 is used. 2.5 liters of nitrogen (inert gas) was introduced into the conductor tube and the dielectric frame 21. Then, the high frequency antenna 23 is supplied with a frequency ι3·56 ΜΗζ and a high frequency power of lkw is output. After a sufficient elapse of time, the measurement was performed below the bottom i〇cm of the dielectric frame 21, and as a result, it was confirmed that a plasma having a density h 2xl 〇 llcm_3 was formed. The electric t density is roughly inversely proportional to (4) of the bottom of the 35-word body. In addition, when the output of the frequency power is changed within the range of 1 to 3 kf, the plasma density and the output of the high-frequency power are substantially positive. Change by comparison (Fig. 2). Both the high-frequency antenna 23 and the dielectric frame 21 are cooled by using an inert gas, and the temperature can be maintained at 8 (rc or less). (Example 2) In the plasma processing apparatus 1 of the first embodiment, As shown in Fig. 3, the second gas discharge port 25 and the second gas introduction port 231 are connected by a connection pipe π, and a pump and a heat exchanger 28 can be provided between the two. The connected second gas introduction port 231 and the connection f Μ are interposed between the two 201212728 insulators, or the Lianzheng camp 27 is formed as an insulation system, thereby making electrical insulation. #由如此此0, 疋In this configuration, the inert gas discharged from the second gas discharge port 25 is cooled by the s ^ parent changer 28, and can be introduced again into the second gas introduction port 231, so that the inert gas can be circulated because of the taste. In addition, in the case of giving priority to economics, the atmosphere can be circulated as a cooling gas. (Embodiment 3) In the electropolymerization processing apparatus 10 of the first embodiment, It is also possible to install the opening 彳1 iii of the vacuum capacity 11 from the lower side. The dielectric housing 21 is attached to the cover member 22 so as to cover the opening portion 1111 from the upper side (Fig. 4 (4)). At this time, the flange portion 2 of the dielectric housing 21 is fixed to the lower surface of the upper wall 111. The cover member 22 is fixed to the upper surface of the upper wall lu. Alternatively, the dielectric housing 21 may be attached to the lower surface of the upper wall U1 having no opening (Fig. 4(b)). At this time, the high frequency antenna 23 is attached. The upper wall is fixed to the upper wall. Further, the cover portion is not required. (Example 4) A vacuum pump can be used to evacuate the gas from the second gas discharge port 25 by using a vacuum pump, thereby forming a vacuum. Instead of filling with an inert gas (Fig. 5(a)). At this time, although the gas passage hole 232 is not provided, in order to cool the high frequency antenna 23, the high frequency antenna 23 is formed into a conductor regulation in the tube. It is preferable to supply a refrigerant such as a cooling gas or a cooling water. By this configuration, as in the case of using an inert gas, discharge in the dielectric housing 21 can be prevented, and the high-frequency antenna 23 and the dielectric frame can be The heat insulation between the wall portions of the body 21 can prevent the temperature of the dielectric frame 21 from rising. 12 201212728 Or, The dielectric housing 21 may be filled with a solid dielectric material μ (Fig. 5(b)). The dielectric material 29 may be a block or a powder. The dielectric housing 21 is sealed in such a manner that air does not enter the gap of the powder. The material of the dielectric material 29 can be a resin such as polytetrafluoroethylene (PTFE) or polyetheretherketone (pEEK). A ceramic such as alumina or cerium oxide, etc. The dielectric material 29 prevents discharge in the dielectric housing 21. At this time, the high frequency antenna 23 is formed so that the high frequency antenna 23 is cooled. It is preferable to circulate a refrigerant such as a cooling gas or a cooling water in the pipe by conductor control. (Embodiment 5) An example of using a high-frequency antenna 23A having a different shape (Fig. 6) will be described. The plasma processing apparatus of the present embodiment has the same shape as the plasma processing apparatus 1 of the first embodiment except for the shape of the high-frequency antenna 23a and the sizes of the opening 1111A, the dielectric housing 21A, and the lid member 22A. Composition. The high-frequency antenna 23A has two legs 3 ι which are extended downward by the cover member 22, and have a U-shape, and the surface formed by the u-shape is parallel to the bottom surface of the frame 21 (the high-frequency antenna 23A faces the vacuum container). The U-shaped portion 312 is arranged such that the insertion direction of u is vertical; and the middle end of the U-shaped portion 312 is connected to one of the legs 311, and the other end of the u-shaped portion 312 and the other end of the foot 311 are Two curved portions 313 that are connected to each other. In the present embodiment, the lengths of the two straight portions (the first straight portion 3121 and the second straight portion 3122) of the U-shaped portion 312 are set to 1 〇cm, and the first straight portion 3121 and the second straight portion are formed. The spacing between the conductors in 3122 is set to 3 cm. Here, the term "interval between conductors" refers to the distance between the inner sides of two conductors 13 201212728 arranged in parallel. The dielectric housing 2U is shaped to match the shape of the high frequency antenna 23A, and the inner short side is formed to be 6 cm longer than the dielectric housing 21 of the i-th embodiment. The depth and the length of the long side inside the dielectric frame 21A are the same as those of the dielectric frame 2A of the first embodiment. The size of the opening portion A and the cover member 22A also match the short side of the inside of the dielectric housing 21A, and the direction of the short side is formed larger than that of the first embodiment. In the high-frequency antenna 23A having the shape of the sixth embodiment, in the i-th straight portion 3121 and the second straight portion 3122 which are arranged in parallel with the bottom surface of the casing 21A, the high-frequency currents flow in opposite directions to each other, so the frame is Immediately below the body 2U, the vertical component of the magnetic field formed by the current flowing through the first straight portion 3121 and the vertical component of the magnetic field formed by the current flowing through the second straight portion 3丨22 are By vibrating in the same phase, the intensity of the magnetic field in the lower portion of the frame 2 ^ A can be formed to be about 2 times as large as in the fourth to fourth embodiments, so that the discharge plasma can be generated with a small high-frequency power, and The discharge plasma can be stabilized even in a gas pressure region of, for example, less than 5 Pa, which is less likely to cause discharge. In the plasma processing apparatus of this embodiment, the experiment was conducted under the same conditions as in the first embodiment. In other words, a mixed gas of argon and hydrogen is introduced into the vacuum vessel while the pressure becomes 1 Pa, and 2.5 liters of nitrogen gas per minute is introduced into the conductor tube and the dielectric frame by the second gas introduction port 231. In the body 21, horse frequency power of 56 MHz and lkw is supplied to the high-frequency antenna 23A. After a sufficient elapse of time, the measurement was performed below the bottom of the dielectric frame 21, and the plasma density was 18 χ 1 〇 11 ^ 3 compared with the first embodiment (1.2 x 1 (Tcm - 3 )). In the present embodiment, the U-shaped portion is described as an example, and the U-shaped portion 312 can be replaced with a word in the same manner as in the first to fourth embodiments, and can be replaced with The S-shaped portion 312 is shown in Fig. 7. Alternatively, a shape such as a U-shape or a U-shape may be used. Further, in the high-frequency antenna 23A of the present embodiment, the I5 portion of the U-shaped portion 312 is replaced with When a circular antenna conductor is generally used, if the radius is r and the applied current is I, the magnetic field strength generated at the center portion is expressed by the following equation: H〇=I/( 2r) On the other hand, when the U-shaped antenna conductor is used as in the present embodiment, the magnetic field strength Hh at the center portion is expressed by the following equation when the interval between the conductors in the two straight portions is d.
Hh = 2I/( 7Γ d) 亦即’以U字形天線導體係可將磁場強度設為圓形天 線導體的4r/( 7Γ d)倍。此時，磁場強度係與d呈反比，因 此藉由縮窄2條直線部之間的距離，可加大感應磁場的強 度。在本實施例中’使用相同長度的U字形天線導體，可 得圓形天線導體約1. 7倍的磁場強度。其中，u字或〕字 之2條平行的導體間的間隔d與該等2條導體的長邊方向 的長度L的比d/L並未特別限定，但是以在〇. 〇5〜〇· 5之 間為宜。此外，天線導體的全長係以被供給至高頻天線之 高頻電力之頻率的1 /4波長以下為宜。 (實施例6) 使用第8圖，說明高頻天線之形狀之其他例。在本實 15 201212728 施例中’高頻天線23B係包括··由蓋件22朝下方延伸的第 1腳32U及帛2腳321β，‘以u字所形成的面被配置成虫蓋 件22呈平行的^字部322A及第2U字部彎 曲部323A及第曲部323B;及直線狀連接部似。第上 腳32U與第1U字部的其中1端㈣㈣ 部323A而相連接，第2腳321β與第2u字部322β的其中 -方端部係藉由第2彎曲部323Β而相連接。此外，第u Γ部3m的另—方端部與第2U字部⑽的另—方端部係 错由直線狀連接部324而相連接^本實施例中亦盘第5 實施例同樣地’可在介電質框體的下方增大磁場的上下方 向成分。 (實施例7 ) 〃使用第9圖，δ兒明南頻天線之形狀之其他例。在本實 把例中’兩頻天線23c係包括：由導體管所構成，由蓋件 22朝下方延伸的第1腳33U及第2腳331B;㈣字所形 j的面相對蓋件22呈垂直配置的第11}字部讓及第2u 子部332β;第1彎曲部333A及第2彎曲部333B;及直線 T接部mn_331A與第字部的其中一方 山—係藉由第1彎曲部333A而相連接’第2腳咖B與第 —P 332B的其中一方端部係藉由第2彎曲部333B而相 此外，第1U字部332A的另一方端部與第2U字部 332β =另一方端部係藉由直線狀連接部334而相連接。在 導：g的管壁係與第1實施例同樣地，在與介電質框體21 丨電質壁部相對向之側設有氣體通過孔232。 16 201212728 在本實施例中，$ 了縮短第1腳331A及第2腳331B 之間的距冑冑聯通線加以省略。取而代之，藉由使用絕 緣體製蓋件22而與高頻天線23G作電性絕緣，並且在第丄 腳331A及第2腳331B與蓋件22之間設有真空密封件34。 此外，在本實施例中，係將高頻天線23c之第iLJ字部 332A的直線部、直線狀連接部334及第2U字部332β的直 線部合計的長度形成為丨〇cm，U字部的2條直線部的間隔 形成為3cm，外徑形成為6.4mm。介電質框體21A的大小係 與第5實施例相同形成為（深度5cm、長邊Ucm'短邊6cm)。 藉由本實施例，包含第u字部332A及第2U字部332b 的面與高頻天線21的插入方向呈平行作配置，藉此在該面 的兩側形成較強的振動磁場，因此可更加提高在真空容器 11内所生成的電漿密度。此外，由高頻天線23C所發生的 磁力線係與真空容器11的内壁面大致呈平行，因此受到該 磁力線束缚的電漿中的電子係被抑制朝真空容器丨丨的内 壁面逸散。藉此，可在真空容器11内發生安定的放電電漿。 在本實施例之電漿處理裝置中，以與第1實施例及第 5貫施例同樣的條件進行實驗。亦即，一面將氬與氫的混 合氣體以壓力成為1 pa的方式導入至真空容器11内，並且 由第2氣體導入口 231將每分2.5公升的氮氣導入至導體 管及介電質框體21内，一面在高頻天線23A供給頻率 13· 56MHz、輸出1 kW的高頻電力。在充分經過時間後，在 離介電質框體21的底部1 〇cin下方進行測定，結果電漿密 度係獲得2. 2xl〇"cm-3之比第1實施例d· 2xl〇Hcm-3)及第5 17 201212728 實施例（2. 2x1ο1 km-3)為更高的值。此係在高頻天線2礼的 U字部#兩側丨生成高密1的電$，該t聚到達介電質框 體21之下方所致。 (實施例8 ) 使用第1 〇圖，說明使用複數高頻天線之電漿處理裝置 之一例。本實施例係設置2個在第6實施例中所使用的高 頻天線23B，將該等2個高頻天線的供電側端部彼此與接 地側端部彼此分別以匯電條41作連結者。匯電條係在中心 邛叹有供電點，在將供電側端部4丨丨相連結的匯電條的供 電”’係連接有尚頻電源。另一方面，將接地側端部412相 連結的匯電條的供電點係作接地。 由供電點至兩天線23B之供電端子為止的距離係分別 大致相同’以對高頻電力之兩天線23B的阻抗由供電點觀 看成為等效的方式來調整供電點的位置。在本實施例中， 在真空容器内導入氣體壓力。·5Pa的氬與氫的混合氣體， 將頻率13.56MHz、輸出lkW的高頻電力供給至供電點，在 真空各器内激發放電電漿。 藉由使用如上所示之構成，可以兩方的高頻天線2抑 在真空容器11内發生大致相同的放電電漿。在離上壁⑴ 為預定距離的電漿密度分布係依放電氣體壓力、高頻電力 言等而產生變化，但是獲得m密度分布㈤條件乃為設 。十事項’可使任意面積的放電電漿發生。 其中，該等2個高頻天線係可均設在i個介電質框體 内，亦可設在不同的介電質框體内。藉由如上所示設置複 18 201212728 數向頻天線’被處理基板及堆積在其上的薄膜大面積化即 成為可能，可提高裝置的量產性。 其中’在上述實施例中’係顯示將2個高頻天線設為 1組的構成’但是該個數並非限定為2個，亦可為3個以 上。此外’亦可將複數個高頻天線設為1組者另外排列複 數組。 【圖式簡單說明】 第1圖係顯示本發明之第1實施例之電漿處理裝置的 縱剖面圖（a )及高頻天線的周邊構成的縱剖面圖（b )。 第2圖係顯示測定出使用第1實施例之電漿處理裝置 所生成的電漿密度的結果的曲線圖。 第3圖係顯示第2實施例之電漿處理裝置中的高頻天 線的周邊構成的縱剖面圖。 第4圖（a)(b)係顯示第3實施例之電漿處理裝置中的 面頻天線的周邊構成的縱剖面圖。 第5圖（a) (b)係顯示第4實施例之電漿處理裝置中的 向頻天線的周邊構成的縱剖面圖。 第6圖係顯示第5實施例之電漿處理裝置中的高頻天 線的周邊構成的縱剖面圖⑷，及該高頻天線的斜視 门 及上視圖（c)。 第7圖係顯示第5實施例之電漿處理 線之其他形狀的上視圖。 中的-頻天 第8圖係第6實施例之電衆處理裝置中的高頻天線的 19 201212728 斜視圖（a)、上視圖（b)及側面圖（c)。 第9圖係顯示第7實施例之電漿處理裝置中的高頻天 線的周邊構成的縱剖面圖。 第1 0圖係第8實施例之電漿處理裝置中的高頻天線的 上視圖。 【主要元件符號說明】 10〜電漿處理裝置； 111~上壁； 111 1A〜開口部； 13〜第1氣體排出口； 1 5〜基體搬出入口， 21、 21 A~介電質框體； 22、 22A〜蓋件； 23、 23A、23B、230 高 23卜第2氣體導入口； 2 4〜聯通線； 2 6〜真空密封件； 2 8〜熱交換機； 31卜腳； 31 2卜第1直線部； 312A〜S字部； 321A〜第1腳； 322人~第1U字部； 11〜真空容器； 1111〜開口部； 12~基體保持部； 14〜第1氣體導入口； 2 0〜天線單元； 211〜凸緣部； 頻天線， 232〜氣體通過孔； 25〜第2氣體排出口； 27~連接管； 29〜介電質材； 312〜U字部； 3122〜第2直線部； 313〜彎曲部； 321B〜第2腳； 322B〜第2U字部； 20 201212728 323六~第1彎曲部； 323B~f 2彎曲部 3 2 4、3 3 4〜直線狀連接部； 331A〜第1腳； 332A〜第1U字部； 333A〜第1彎曲部； 34〜真空密封件； 411〜供電側端部； S〜基體。 3316~第 2 腳； 332B〜第2U字部； 333B〜第2彎曲部； 41 ~匯電條； 412〜接地側端部； 21Hh = 2I/( 7Γ d) That is, the U-shaped antenna guiding system can set the magnetic field strength to 4r/( 7Γ d) times the circular antenna conductor. At this time, the magnetic field strength is inversely proportional to d, so that the intensity of the induced magnetic field can be increased by narrowing the distance between the two straight portions. The magnetic field strength of the circular antenna conductor is about 1.7 times, and the magnetic antenna strength of the circular antenna is about 1.7 times. The ratio d/L of the interval d between the two parallel conductors of the u word or the word and the length L of the two conductors in the longitudinal direction is not particularly limited, but is not limited to 〇. 〇5~〇· 5 is appropriate. Further, the entire length of the antenna conductor is preferably 1/4 or less of the frequency of the high-frequency power supplied to the high-frequency antenna. (Embodiment 6) Another example of the shape of a radio-frequency antenna will be described using Fig. 8. In the embodiment of the present invention, the high-frequency antenna 23B includes a first leg 32U and a second leg 321β extending downward from the cover member 22, and a surface formed by the U-shaped portion is disposed such that the cover member 22 is formed. The parallel portion 322A, the second U-shaped bent portion 323A, and the curved portion 323B; and the linear connecting portion are similar. The first leg 32U is connected to one end (four) (four) portion 323A of the first U-shaped portion, and the other end portions of the second leg 321β and the second u-shaped portion 322β are connected by the second bent portion 323A. Further, the other end portion of the u-th portion 3m and the other end portion of the second U-shaped portion (10) are connected by the linear connecting portion 324. In the present embodiment, the fifth embodiment is similarly The vertical component of the magnetic field can be increased below the dielectric frame. (Embodiment 7) 其他 In the ninth figure, another example of the shape of the δ 儿南南频 antenna is used. In the present embodiment, the 'two-frequency antenna 23c includes: a first leg 33U and a second leg 331B which are formed of a conductor tube and extend downward from the cover member 22; the face of the shape of the figure (j) is opposite to the cover member 22 The 11th word portion of the vertical arrangement and the 2nd sub-portion 332β; the first curved portion 333A and the second curved portion 333B; and the straight line T-connected portion mn_331A and one of the first portion of the first-word portion are formed by the first curved portion 333A is connected to each other. One of the end portions of the second foot B and the first P 332B is connected by the second bending portion 333B, and the other end portion of the first U-shaped portion 332A and the second U-shaped portion 332β = another One end is connected by a linear connecting portion 334. In the same manner as in the first embodiment, the pipe wall of the guide: g is provided with a gas passage hole 232 on the side opposite to the dielectric wall portion 21 of the dielectric casing 21 . 16 201212728 In the present embodiment, the distance between the first leg 331A and the second leg 331B is shortened and omitted. Instead, the high frequency antenna 23G is electrically insulated by the use of the insulating cover member 22, and a vacuum seal 34 is provided between the first leg 331A and the second leg 331B and the cover member 22. In the present embodiment, the total length of the straight portion of the i-th LJ-shaped portion 332A of the high-frequency antenna 23c, the linear connecting portion 334, and the straight portion of the second U-shaped portion 332β is 丨〇cm, U-shaped portion. The interval between the two straight portions was 3 cm, and the outer diameter was 6.4 mm. The size of the dielectric frame 21A is formed in the same manner as in the fifth embodiment (depth 5 cm, long side Ucm' short side 6 cm). According to the present embodiment, the surface including the u-th portion 332A and the second U-shaped portion 332b is arranged in parallel with the insertion direction of the radio-frequency antenna 21, whereby a strong vibrating magnetic field is formed on both sides of the surface, thereby making it possible to further The plasma density generated in the vacuum vessel 11 is increased. Further, the magnetic lines of force generated by the high-frequency antenna 23C are substantially parallel to the inner wall surface of the vacuum vessel 11, so that the electrons in the plasma bound by the magnetic lines of force are prevented from being dissipated toward the inner wall surface of the vacuum vessel. Thereby, a stable discharge plasma can be generated in the vacuum vessel 11. In the plasma processing apparatus of the present embodiment, experiments were conducted under the same conditions as those of the first embodiment and the fifth embodiment. In other words, a mixed gas of argon and hydrogen is introduced into the vacuum vessel 11 at a pressure of 1 Pa, and 2.5 liters of nitrogen gas per minute is introduced into the conductor tube and the dielectric frame by the second gas introduction port 231. In the 21st, the high-frequency power is supplied to the high-frequency antenna 23A at a frequency of 13.56 MHz and output of 1 kW. After a sufficient elapse of time, the measurement was performed under the bottom 1cin of the dielectric frame 21, and as a result, the plasma density was 2. 2xl 〇"cm-3 ratio. The first embodiment d·2xl〇Hcm- 3) and 5 17 201212728 The embodiment (2. 2x1ο1 km-3) is a higher value. This is caused by the high-density 1 electric power generated on both sides of the U-shaped portion # of the high-frequency antenna 2, which is caused by reaching the lower side of the dielectric frame 21. (Embodiment 8) An example of a plasma processing apparatus using a complex high-frequency antenna will be described using a first drawing. In the present embodiment, two high-frequency antennas 23B used in the sixth embodiment are provided, and the power supply-side end portions and the ground-side end portions of the two high-frequency antennas are connected to each other by the bus bar 41. . The power strip is sighed at the center and has a power supply point. The power supply of the bus bar that connects the power supply side ends is connected to the frequency power supply. On the other hand, the ground side end portion 412 is connected. The power supply point of the bus bar is grounded. The distance from the power supply point to the power supply terminal of the two antennas 23B is substantially the same 'the equivalent of the impedance of the two antennas 23B for the high frequency power is viewed from the power supply point. In the present embodiment, the gas pressure is introduced into the vacuum vessel. The mixed gas of argon and hydrogen of 5 Pa is supplied to the power supply point at a frequency of 13.56 MHz and the output lkW is supplied to the power supply point. The discharge discharge plasma is internally excited. By using the configuration shown above, substantially the same discharge plasma can be generated in the vacuum vessel 11 by the two high-frequency antennas 2. The plasma density distribution at a predetermined distance from the upper wall (1) The change is caused by the discharge gas pressure, the high-frequency power, etc., but the m-density distribution (5) condition is set. The ten items can generate discharge plasma of any area. Among them, the two high-frequency antennas can be All It can be set in i dielectric frames or in different dielectric frames. By setting the above 18 201212728 digital frequency antenna 'processed substrate and large area of film deposited on it In this case, the mass production of the device can be improved. In the above-described embodiment, the configuration of the two high-frequency antennas is set to one set, but the number is not limited to two, and may be three. In addition, 'a plurality of high-frequency antennas may be set as one set, and a plurality of arrays may be arranged. [Brief Description] FIG. 1 is a longitudinal sectional view showing a plasma processing apparatus according to a first embodiment of the present invention. (a) and a longitudinal cross-sectional view (b) of the periphery of the radio-frequency antenna. Fig. 2 is a graph showing the result of measuring the plasma density generated by using the plasma processing apparatus of the first embodiment. A longitudinal cross-sectional view showing a configuration of a periphery of a radio-frequency antenna in the plasma processing apparatus of the second embodiment. Fig. 4(a) and (b) are diagrams showing the area frequency antenna in the plasma processing apparatus of the third embodiment. Longitudinal cross-sectional view of the surrounding structure. Fig. 5 (a) (b) shows the plasma of the fourth embodiment Fig. 6 is a longitudinal sectional view showing a peripheral structure of a radio-frequency antenna in a plasma processing apparatus according to a fifth embodiment, and a squint of the high-frequency antenna Door and top view (c). Fig. 7 is a top view showing another shape of the plasma processing line of the fifth embodiment. The eighth image of the middle frequency is the height of the electric power processing apparatus of the sixth embodiment. 19 201212728 oblique view (a), top view (b), and side view (c) of the frequency antenna. Fig. 9 is a longitudinal sectional view showing the configuration of the periphery of the radio-frequency antenna in the plasma processing apparatus of the seventh embodiment. Fig. 10 is a top view of the radio-frequency antenna in the plasma processing apparatus of the eighth embodiment. [Description of main components] 10 to plasma processing apparatus; 111 to upper wall; 111 1A to opening; 13 to 1 gas discharge port; 1 5~ base body loading and unloading port, 21, 21 A~ dielectric frame; 22, 22A~ cover piece; 23, 23A, 23B, 230 high 23 b second gas inlet; 2 4~ Unicom Line; 2 6 ~ vacuum seal; 2 8 ~ heat exchanger; 31 b foot; 31 2 b 1st straight line; 312A ~ S word ; 321A~1st foot; 322 person~1U word part; 11~vacuum container; 1111~ opening part; 12~ base holding part; 14~1st gas inlet; 2 0~ antenna unit; 211~ flange part Frequency antenna, 232~ gas passage hole; 25~2nd gas discharge port; 27~ connection pipe; 29~ dielectric material; 312~U word part; 3122~2nd straight part; 313~bending part; 321B~ 2nd leg; 322B to 2Uth word part; 20 201212728 323 6~1st bending part; 323B~f 2 bending part 3 2 4, 3 3 4~ linear connecting part; 331A~1st leg; 332A~1U Word part; 333A~1st bending part; 34~vacuum seal; 411~ power supply side end; S~ base. 3316~2nd leg; 332B~2Uth word part; 333B~2nd bending part; 41~heating strip; 412~grounding side end; 21