CN116998225A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
CN116998225A
CN116998225A CN202280022195.2A CN202280022195A CN116998225A CN 116998225 A CN116998225 A CN 116998225A CN 202280022195 A CN202280022195 A CN 202280022195A CN 116998225 A CN116998225 A CN 116998225A
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CN
China
Prior art keywords
processing apparatus
plasma processing
antenna
antenna conductor
shield
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Pending
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CN202280022195.2A
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Chinese (zh)
Inventor
松尾大辅
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Nissin Electric Co Ltd
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Nissin Electric Co Ltd
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Publication of CN116998225A publication Critical patent/CN116998225A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention aims to utilize a linear antenna part and reduce the generation of capacitive coupling plasma. A linear antenna unit (3) provided in the vacuum container is provided with: an antenna conductor (31) in which a high-frequency current flows; and a Faraday shield (33) provided around at least a part of the antenna conductor (31).

Description

Plasma processing apparatus
Technical Field
The present invention relates to a plasma processing apparatus for processing an object to be processed by using plasma.
Background
A plasma processing apparatus is known which generates plasma by flowing a high-frequency current through an antenna, and uses the plasma to process an object to be processed such as a substrate. For example, the sputtering apparatus described in patent document 1 is an apparatus for forming a film on a substrate by sputtering a target using plasma. In the sputtering apparatus, the substrate and the target are held in a vacuum chamber into which a gas is introduced while being evacuated, and the plasma is generated by a plurality of linear antennas arranged along the surface of the substrate.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication No. 2018-154875
Disclosure of Invention
Problems to be solved by the invention
When a linear antenna is used, an inductively coupled plasma (ICP (Inductively Coupled Plasma)) and a capacitively coupled plasma (CCP (Capacitively Coupled Plasma)) are generated. In the case of generating the capacitively coupled plasma, since ions are accelerated by a plasma potential, high-energy particles may reach the surface of the object to be processed.
An object of an embodiment of the present invention is to realize a plasma processing apparatus or the like that uses a linear antenna portion and can reduce the generation of capacitively coupled plasma.
Technical means for solving the problems
In order to solve the above problems, a plasma processing apparatus according to an embodiment of the present invention includes: a vacuum container for accommodating an object to be processed therein; and a linear antenna unit which is provided in the vacuum chamber and generates plasma in the vacuum chamber, the antenna unit including: an antenna conductor in which a high-frequency current flows; and a Faraday shield disposed around at least a portion of the antenna conductor.
ADVANTAGEOUS EFFECTS OF INVENTION
According to an embodiment of the present invention, a linear antenna portion is utilized, and generation of capacitively coupled plasma can be reduced.
Drawings
Fig. 1 is a cross-sectional view schematically showing the structure of a plasma processing apparatus according to an embodiment of the present invention.
Fig. 2 is a perspective view schematically showing the structure of an antenna unit in the plasma processing apparatus.
Fig. 3 is an arrow sectional view taken along line A-A of fig. 2.
Fig. 4 is a perspective view schematically showing the structure of an antenna unit in a plasma processing apparatus according to another embodiment of the present invention.
Fig. 5 is a perspective view schematically showing the structure of an antenna unit in a plasma processing apparatus according to still another embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail. For convenience of explanation, members having the same functions as those shown in the respective embodiments are given the same reference numerals, and the explanation thereof is omitted appropriately.
[ embodiment 1]
An embodiment of the present invention will be described with reference to fig. 1 to 3.
(Structure of plasma processing apparatus)
Fig. 1 is a cross-sectional view schematically showing the structure of a plasma processing apparatus 1 according to the present embodiment. The plasma processing apparatus 1 is an apparatus that performs plasma processing on a substrate S using plasma P. Here, examples of the process performed on the substrate S by the plasma processing apparatus 1 include: film formation, etching, ashing, and the like by a plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) method or a plasma sputtering method. The plasma processing apparatus 1 is also called a plasma CVD apparatus when a film is formed by a plasma CVD method, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when a film is formed by a plasma sputtering method.
As shown in fig. 1, the plasma processing apparatus 1 includes a vacuum chamber 2, an antenna unit 3, and a high-frequency power supply 4.
The vacuum vessel 2 is, for example, a metal vessel, and is electrically grounded. A substrate S as an object to be processed is accommodated in the vacuum chamber 2. The interior of the vacuum chamber 2 is evacuated by the vacuum evacuation device 6, and a gas G corresponding to the processing contents to be performed on the substrate S is introduced through the gas introduction port 21. The gas G may be any gas of a type generally used in the plasma processing apparatus 1, and the specific composition is not particularly limited.
A substrate holder 8 for holding a substrate S is provided inside the vacuum chamber 2. A heater for heating the substrate S may be provided in the substrate holder 8, and a bias voltage may be applied. When the plasma processing apparatus 1 is a plasma sputtering apparatus, a target is further disposed in the vacuum chamber 2.
The antenna unit 3 includes an antenna conductor 31 for generating plasma and a radome 32 (first insulator) covering the antenna conductor 31. The antenna portion 3 is linear and is provided so as to face the substrate S in the vacuum chamber 2. Specifically, the antenna unit 3 is disposed above the substrate S in the vacuum chamber 2 so as to be along the surface of the substrate S (for example, substantially parallel to the surface of the substrate S). The number of the antenna units 3 disposed in the vacuum chamber 2 may be one or a plurality.
The antenna conductor 31 is formed of, for example, copper, aluminum, an alloy of these, stainless steel, or the like. The antenna conductor 31 is linear. The antenna conductor 31 may be cylindrical. In this case, the antenna conductor 31 can be cooled by flowing a coolant such as cooling water through the hollow portion in the antenna conductor 31. The antenna conductor 31 is not limited to the above-described shape, and may be, for example, a solid shape without a hollow portion.
One end 31a of the antenna conductor 31 penetrates through the wall opening 22 provided in one of the side walls 2a of the vacuum vessel 2, and the other end 31b of the antenna conductor 31 penetrates through the wall opening 22 provided in the other side wall 2b of the vacuum vessel 2 opposite to the side wall 2 a. An insulator (e.g., an insulating flange) 23 is provided in each wall opening 22, and an end 31a and an end 31b of the antenna conductor 31 are respectively air-tightly passed through the insulator 23 by using an O-ring or the like, and are supported by the vacuum vessel 2 through the insulator 23. Thereby, the antenna conductor 31 is supported in a state of being electrically insulated from the vacuum chamber 2. The material of the insulator 23 is, for example, ceramic such as alumina, quartz, or the like, but is not limited thereto.
The radome 32 is an insulator that protects the antenna conductor 31. The radome 32 of the present embodiment is a linear tube body covering the antenna conductor 31, and is provided coaxially with the antenna conductor 31. Both ends of the radome 32 are supported by the insulator 23 or the antenna conductor 31. The material of the radome 32 is, for example, an insulator such as quartz, alumina, silicon nitride, silicon carbide, or silicon, but is not limited thereto. The radome 32 may be a coated insulator formed on the surface of the antenna conductor 31.
The high-frequency power supply 4 supplies high-frequency power to the antenna conductor 31. The frequency of the high-frequency voltage applied to the antenna conductor 31 by the high-frequency power supply 4 is, for example, generally 13.56MHz, but is not limited thereto.
The high-frequency power supply 4 is connected to one of the ends 31a of the antenna conductor 31 via the impedance variable device 41. The other end 31b of the antenna conductor 31 is electrically grounded, but may be connected to another antenna conductor 31 via another impedance transformer 41.
In the plasma processing apparatus 1 having the above-described configuration, the high-frequency power is supplied from the high-frequency power source 4 to the antenna conductor 31 via the impedance variable device 41, and the high-frequency current flows through the antenna conductor 31. Thereby, plasma P is generated in the vacuum chamber 2. The generated plasma P diffuses to the vicinity of the substrate S or the target, and the above-described process is performed by the plasma P.
(Structure of Faraday shield)
Fig. 2 is a perspective view schematically showing the structure of the antenna unit 3. The upper stage of fig. 2 is a view of the antenna section 3 from above, and the lower stage of fig. 2 is a view of the antenna section 3 from the side. Fig. 3 is an arrow sectional view at line A-A of fig. 2. In fig. 2, the impedance variable device 41 is omitted.
As shown in fig. 2 and 3, the antenna unit 3 of the present embodiment further includes a faraday shield 33 (hereinafter simply referred to as "shield 33"). The shielding member 33 is disposed on the outer surface of the radome 32 and is electrically grounded. The shield 33 may be directly grounded to the ground or may be connected to the Ground (GND) of the high-frequency power source 4.
The shield 33 is made of conductive metal such as copper, stainless steel, or aluminum, and is formed by vapor deposition, plating, or adhesion of a thin plate. The thickness of the shield 33 may be as small as the current flows, and is preferably 10nm to 5mm.
The shield 33 includes a plurality of ring portions 331 and a plurality of connection portions 332. The plurality of loop portions 331 are arranged on a plane perpendicular to the axis of the antenna conductor 31 and are arranged apart from each other. The plurality of connection portions 332 connect the adjacent ring portions 331. In the example of fig. 2 and 3, the plurality of connection portions 332 are alternately arranged at the upper and lower portions of the radome 32. That is, the plurality of ring portions 331 are each connected to two connecting portions 332 from both sides, and the connection positions of the two connecting portions 332 are symmetrical to each other with respect to the center of the ring portion 331. The slit portion 333 is formed by the adjacent ring portion 331 and the connection portion 332 connecting the adjacent ring portions 331.
In the antenna section 3 having the above-described structure, when a high-frequency current flows through the antenna conductor 31, a high-frequency electric field and a high-frequency magnetic field are generated around the antenna conductor 31. At this time, the high-frequency electric field causes the charged particles to move inside the shield 33, and thus the high-frequency electric field is reduced by the shield 33. As a result, the generation of capacitively coupled plasma can be reduced.
On the other hand, when a high-frequency current flows through the antenna conductor 31, an induced electromotive force is generated in the shield 33 in a direction parallel to the antenna conductor 31. The induced electromotive force generates an induced current in the connection portion 332, but does not generate an induced current in the slit portion 333. Therefore, the shield 33 of the present embodiment is smaller in the induced current than the shield covering the entire periphery of the antenna conductor 31. As a result, the decrease in the high-frequency magnetic field due to the shield 33 is reduced, and the generation of the inductively coupled plasma P can be maintained.
In the present embodiment, the two connection positions in the ring 331 are different. Thus, the portion between the connection positions in the ring 331 becomes a path of the induced current. Since the path is orthogonal to the current path of the antenna conductor 31, the resistance of the path effectively becomes large. Therefore, since the induced current is reduced, the reduction of the high-frequency magnetic field by the shield 33 is further reduced, and as a result, the generation of the inductively coupled plasma P can be reliably maintained. In addition, ohmic heating in the shield 33 may be reduced.
Further, in the present embodiment, the two connection positions in the ring 331 are symmetrical to each other with respect to the center of the ring 331. Thereby, the resistance effectively becomes maximum. Therefore, since the induced current is minimized, the decrease in the high-frequency magnetic field due to the shield 33 is minimized, and as a result, the generation of the inductively coupled plasma P can be more reliably maintained. In addition, ohmic heating in the shield 33 may be further reduced.
(with recording matters)
In the present embodiment, the plurality of connection portions 332 are disposed at the upper and lower portions of the radome 32, but may be disposed at both side portions of the radome 32. The two connection positions in the ring 331 may be different, or may be asymmetric with respect to the center of the ring 331.
In addition, the shield 33 may be disposed inside the radome 32. That is, the shield 33 may be disposed around the antenna conductor 31 and at any position not in conduction with the antenna conductor 31.
[ embodiment 2]
Another embodiment of the present invention will be described with reference to fig. 4. The plasma processing apparatus 1 of the present embodiment is different from the plasma processing apparatus 1 shown in fig. 1 to 3 in the configuration of the antenna section 3 and the other configurations are the same.
Fig. 4 is a perspective view schematically showing the structure of the antenna unit 3, and is a view of the antenna unit 3 from above. The antenna unit 3 of the present embodiment is different from the antenna unit 3 shown in fig. 2 and 3 in that a shield 34 (second insulator) is further included, and other structures are the same.
The shield 34 is an insulator that protects the shield 33. The shield 34 of the present embodiment is a linear tube that covers the shield 33, and is provided coaxially with the antenna conductor 31. Both ends of the shield 34 are supported by the insulator 23 or the radome 32. The material of the shield 34 is the same as that which can be used as the radome 32. The shield 34 may be a coated insulator formed on the surfaces of the radome 32 and the shield 33.
According to the structure, the shield 33 is covered by the shield cover 34. This prevents metal particles from adhering to the slit 333 of the shield 33 to form a metal film, and the adjacent ring 331 is electrically connected to the outside of the connection 332.
(with recording matters)
In the present embodiment, the shield 33 is formed on the outer surface of the radome 32, but may be formed on the inner surface of the shield 34, or may be formed inside the shield 34.
[ embodiment 3]
A further embodiment of the present invention will be described with reference to fig. 5. The plasma processing apparatus 1 of the present embodiment is different from the plasma processing apparatus 1 shown in fig. 1 to 4 in the configuration of the antenna section 3 and the other configurations are the same.
Fig. 5 is a perspective view schematically showing the structure of the antenna unit 3, and is a view of the antenna unit 3 from above. The antenna unit 3 of the present embodiment differs from the antenna unit 3 shown in fig. 4 in that the shield 33 and the shield cover 34 are omitted in the central portion of the antenna unit 3, and the other structures are the same. That is, in the present embodiment, the shield 33 and the shield case 34 are provided at both end portions of the antenna portion 3. In this way, the shield 33 and the shield case 34 may be provided around a part of the antenna conductor 31.
The vacuum vessel 2 is grounded, and a high-frequency voltage is applied to the antenna conductor 31. As a result, the intensity of the electric field tends to be higher in the region of the antenna conductor 31 which is closer to the vacuum chamber 2 than in the other regions.
In contrast, according to the present embodiment, the shield 33 is provided at both end portions of the antenna portion 3 which is close to the vacuum chamber 2 with respect to the antenna conductor 31. This reduces the strength of the electric field in the region where the antenna conductor 31 is close to the vacuum chamber 2. As a result, the generation of the capacitively coupled plasma can be effectively reduced, and the distribution of the inductively coupled plasma P can be improved.
[ examples ]
With respect to the plasma processing apparatus 1 shown in fig. 1 to 3, examples in which the dimensions of the shield 33 are variously changed will be described. Here, the slit pitch of the shield 33 is a length indicated by SP in fig. 2, and the slit width of the shield 33 is a length indicated by SW in fig. 2. In addition, the material of the shield 33 of the present embodiment is SUS316, the thickness is 10 μm, and the slit width SW is less than 0.5mm.
As a result, it was found that when the width (SP-SW) of the ring portion 331 is 15mm or less, the decrease in the magnetic field strength is small, and it is desirable. Further, it was found that when the width of the ring 331 is 5mm or less, the amount of decrease in the magnetic field strength is smaller, and more preferable. The lower limit value of the width of the ring 331 is determined by various conditions such as manufacturing capability and allowable resistance.
[ summary ]
The plasma processing apparatus according to embodiment 1 of the present invention has a structure including: a vacuum container for accommodating an object to be processed therein; and a linear antenna unit which is provided in the vacuum chamber and generates plasma in the vacuum chamber, the antenna unit including: an antenna conductor in which a high-frequency current flows; and a Faraday shield disposed around at least a portion of the antenna conductor.
According to the structure, the electric field generated by the antenna conductor is shielded by the faraday shield, so that propagation to the outside can be reduced. Thereby, the generation of capacitively coupled plasma can be reduced.
The plasma processing apparatus according to embodiment 2 of the present invention may be the plasma processing apparatus according to embodiment 1, wherein the faraday shield is provided at a position close to the antenna conductor and the vacuum chamber. In this case, the intensity of the electric field in the region where the antenna conductor is close to the vacuum vessel can be reduced. As a result, the generation of capacitively coupled plasma can be effectively reduced.
The plasma processing apparatus according to embodiment 3 of the present invention may be the plasma processing apparatus according to embodiment 1 or embodiment 2, wherein the faraday shield includes: a plurality of loop parts which are arranged around the antenna conductor and are separated from each other; and a connecting portion connecting the adjacent ring portions to each other.
In this case, the slit portion is formed by two adjacent ring portions and a connecting portion connecting the two ring portions. At this time, if a high-frequency current flows through the antenna conductor, an induced current is generated in the connection portion, but no induced current is generated in the slit portion. Therefore, the faraday shield is smaller in the induced current than a shield covering the entire periphery of the antenna conductor, and as a result, the reduction in the high-frequency magnetic field generated by the antenna conductor due to the faraday shield is reduced, and the generation of the inductively coupled plasma can be maintained.
The plasma processing apparatus according to embodiment 4 of the present invention is the plasma processing apparatus according to embodiment 3, wherein it is preferable that the connection positions of the two connection portions connected from both sides of the certain ring portion are different from the connection positions of the certain ring portion. In this case, the portion between the connection positions in the certain ring portion becomes a path of the induced current. Since the path is orthogonal to the current path of the antenna conductor, the resistance of the path effectively becomes large. Therefore, the induced current generated by the high-frequency current in the antenna conductor becomes small, and as a result, the reduction in the high-frequency magnetic field generated by the high-frequency current due to the faraday shield becomes further small.
The plasma processing apparatus according to embodiment 5 of the present invention is the plasma processing apparatus according to embodiment 4, wherein it is further preferable that the connection positions of the two connection portions are symmetrical to each other with respect to the center of the ring portion. In this case, the resistance effectively becomes maximum. Accordingly, the induced current generated by the high-frequency current in the antenna conductor is minimized, and as a result, the reduction of the high-frequency magnetic field generated by the high-frequency current by the faraday shield is minimized.
The plasma processing apparatus according to embodiment 6 of the present invention is the plasma processing apparatus according to embodiment 3 to embodiment 5, wherein the width of the ring portion is preferably 15mm or less. In this case, the decrease in the high-frequency magnetic field can be suppressed. The lower limit value of the width of the ring portion is determined by various conditions such as manufacturing capability and allowable resistance value.
The plasma processing apparatus according to embodiment 7 of the present invention is the plasma processing apparatus according to embodiment 1 to embodiment 6, wherein the antenna section preferably further includes a first insulator provided between the antenna conductor and the faraday shield. In this case, conduction between the antenna conductor and the faraday shield can be prevented.
The plasma processing apparatus according to embodiment 8 of the present invention may be the plasma processing apparatus according to embodiment 1 to embodiment 7, wherein the antenna section further includes a second insulator covering a periphery of the faraday shield. In this case, the metal particles can be prevented from adhering to the faraday shield to form a metal film, and the path of the current flowing through the faraday shield can be shortened.
The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention.
Description of symbols
1: plasma processing apparatus
2: vacuum container
2a, 2b: side wall
3: antenna part
4: high frequency power supply
6: vacuum exhaust device
8: substrate holder
21: gas inlet
22: wall surface opening
23: insulation material
31: antenna conductor
31a, 31b: end portion
32: radome (first insulator)
33: faraday shield
34: shielding cover (second insulator)
41: impedance variable device
331: ring part
332: connecting part
333: slit portion

Claims (8)

1. A plasma processing apparatus, comprising: a vacuum container for accommodating an object to be processed therein; and
a linear antenna part which is arranged in the vacuum container and is used for generating plasma in the vacuum container,
the antenna section includes:
an antenna conductor in which a high-frequency current flows; and
and a Faraday shield disposed around at least a portion of the antenna conductor.
2. The plasma processing apparatus according to claim 1, wherein the faraday shield is provided at a position close to the vacuum vessel with respect to the antenna conductor.
3. The plasma processing apparatus of claim 1 or 2, wherein the faraday shield comprises:
a plurality of loop parts which are arranged around the antenna conductor and are separated from each other; and
and a connecting portion connecting the adjacent ring portions to each other.
4. The plasma processing apparatus according to claim 3, wherein two connection portions respectively connected from both sides of a certain ring portion are different from a connection position of the certain ring portion.
5. The plasma processing apparatus according to claim 4, wherein connection positions of the two connection portions are symmetrical to each other with respect to a center of the ring portion.
6. The plasma processing apparatus according to any one of claims 3 to 5, wherein a width of the ring portion is 15mm or less.
7. The plasma processing apparatus of any of claims 1 to 6, wherein the antenna portion further comprises a first insulator disposed between the antenna conductor and the faraday shield.
8. The plasma processing apparatus according to any one of claims 1 to 7, wherein the antenna portion further comprises a second insulator covering a periphery of the faraday shield.
CN202280022195.2A 2021-08-03 2022-07-22 Plasma processing apparatus Pending CN116998225A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-127696 2021-08-03
JP2021127696A JP2023022686A (en) 2021-08-03 2021-08-03 Plasma processing apparatus
PCT/JP2022/028445 WO2023013437A1 (en) 2021-08-03 2022-07-22 Plasma treatment device

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Publication Number Publication Date
CN116998225A true CN116998225A (en) 2023-11-03

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Application Number Title Priority Date Filing Date
CN202280022195.2A Pending CN116998225A (en) 2021-08-03 2022-07-22 Plasma processing apparatus

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