TW202308465A - Plasma treatment device - Google Patents

Plasma treatment device Download PDF

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TW202308465A
TW202308465A TW111128235A TW111128235A TW202308465A TW 202308465 A TW202308465 A TW 202308465A TW 111128235 A TW111128235 A TW 111128235A TW 111128235 A TW111128235 A TW 111128235A TW 202308465 A TW202308465 A TW 202308465A
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antenna
antenna conductor
plasma processing
plasma
shield
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松尾大輔
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日商日新電機股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
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  • Power Engineering (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Vapour Deposition (AREA)
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Abstract

The present invention reduces generation of a capacitive coupled plasma while using a linear antenna part. A linear antenna part (3) installed inside a vacuum container is provided with an antenna conductor (31) through which high-frequency current flows; and a Faraday shield (33) provided around at least a part of the antenna conductor (31).

Description

電漿處理裝置Plasma treatment device

本發明是有關於一種使用電漿對被處理物進行處理的電漿處理裝置。The invention relates to a plasma treatment device for treating objects to be treated with plasma.

已知有藉由在天線流動高頻電流而生成電漿從而使用該電漿對基板等被處理物實施處理的電漿處理裝置。例如，專利文獻1中記載的濺鍍裝置是使用電漿對靶進行濺鍍而於基板上成膜的裝置。於所述濺鍍裝置中，於被抽真空且供氣體導入的真空容器內，保持所述基板及所述靶，藉由沿著所述基板的表面排列的多個直線狀的天線生成所述電漿。 [現有技術文獻] [專利文獻] There is known a plasma processing apparatus that generates plasma by flowing a high-frequency current through an antenna, and processes an object to be processed such as a substrate using the plasma. For example, the sputtering apparatus described in patent document 1 is an apparatus which sputters a target using plasma, and forms a film on a board|substrate. In the sputtering device, the substrate and the target are held in a vacuum container that is evacuated and introduced into a gas, and the substrate and the target are generated by a plurality of linear antennas arranged along the surface of the substrate. Plasma. [Prior art literature] [Patent Document]

[專利文獻1]日本專利特開2018-154875號公報[Patent Document 1] Japanese Patent Laid-Open No. 2018-154875

[發明所欲解決之課題][Problem to be Solved by the Invention]

於利用直線狀天線的情況下，生成感應耦合電漿（ICP（Inductively Coupled Plasma））以及電容耦合電漿（CCP（Capacitively Coupled Plasma））。於生成該電容耦合電漿的情況下，由於藉由電漿電位使離子加速，因此高能量的粒子有可能到達所述被處理物的表面。In the case of using a linear antenna, inductively coupled plasma (ICP (Inductively Coupled Plasma)) and capacitively coupled plasma (CCP (Capacitively Coupled Plasma)) are generated. When generating this capacitively coupled plasma, since ions are accelerated by the plasma potential, high-energy particles may reach the surface of the object to be processed.

本發明的一形態的目的在於實現一種利用直線狀的天線部、並且可降低電容耦合電漿的生成的電漿處理裝置等。 [解決課題之手段] An object of one aspect of the present invention is to realize a plasma processing apparatus and the like which can reduce generation of capacitively coupled plasma while utilizing a linear antenna unit. [Means to solve the problem]

為解決所述課題，本發明的一形態的電漿處理裝置包括：真空容器，於內部收容被處理物；以及直線狀的天線部，設置於所述真空容器的內部，且用於在所述真空容器的內部產生電漿，該天線部包括：天線導體，於其中流動高頻電流；以及法拉第屏蔽件，設置於該天線導體的至少一部分的周圍。 [發明的效果] In order to solve the above-mentioned problems, a plasma processing apparatus according to an aspect of the present invention includes: a vacuum container for accommodating an object to be processed; Plasma is generated inside the vacuum container, and the antenna unit includes: an antenna conductor through which a high-frequency current flows; and a Faraday shield provided around at least a part of the antenna conductor. [Effect of the invention]

根據本發明的一形態，利用直線狀的天線部，並且可降低電容耦合電漿的生成。According to one aspect of the present invention, the generation of capacitively coupled plasma can be reduced while utilizing the linear antenna portion.

以下，對本發明的實施方式進行詳細說明。再者，為了便於說明，對於具有與各實施方式中所示的構件相同的功能的構件標註相同的符號，並適當省略其說明。Hereinafter, embodiments of the present invention will be described in detail. In addition, for convenience of description, the same code|symbol is attached|subjected to the member which has the same function as the member shown in each embodiment, and the description is abbreviate|omitted suitably.

〔實施方式1〕 參照圖1～圖3對本發明的一實施方式進行說明。 [Embodiment 1] One embodiment of the present invention will be described with reference to FIGS. 1 to 3 .

（電漿處理裝置1的結構） 圖1是示意性地表示本實施方式中的電漿處理裝置1的結構的剖面圖。電漿處理裝置1是使用電漿P對基板S實施電漿處理的裝置。此處，作為藉由電漿處理裝置1對基板S實施的處理的例子，可列舉：利用電漿化學氣相沈積（Chemical Vapor Deposition，CVD）法或者電漿濺鍍法的膜形成、蝕刻、灰化等。再者，電漿處理裝置1於藉由電漿CVD法進行膜形成的情況下亦被稱為電漿CVD裝置，於進行蝕刻的情況下亦被稱為電漿蝕刻裝置，於進行灰化的情況下亦被稱為電漿灰化裝置，於藉由電漿濺鍍法進行膜形成的情況下亦被稱為電漿濺鍍裝置。 (Structure of plasma treatment device 1) FIG. 1 is a cross-sectional view schematically showing the structure of a plasma processing apparatus 1 in this embodiment. The plasma processing apparatus 1 is an apparatus for performing plasma processing on a substrate S using plasma P. Here, examples of the processing performed on the substrate S by the plasma processing apparatus 1 include film formation by a plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) method or a plasma sputtering method, etching, Ashing etc. In addition, the plasma processing apparatus 1 is also called a plasma CVD apparatus when performing film formation by a plasma CVD method, and is also called a plasma etching apparatus when performing etching, and is also called a plasma etching apparatus when performing ashing. In this case, it is also called a plasma ashing device, and when performing film formation by a plasma sputtering method, it is also called a plasma sputtering device.

如圖1所示，電漿處理裝置1包括真空容器2、天線部3及高頻電源4。As shown in FIG. 1 , a plasma processing apparatus 1 includes a vacuum container 2 , an antenna unit 3 , and a high-frequency power source 4 .

真空容器2例如是金屬製的容器，且電性接地。於真空容器2內收容有作為被處理物的基板S。真空容器2的內部藉由真空排氣裝置6被抽真空，經由氣體導入口21導入與對基板S實施的處理內容對應的氣體G。氣體G只要為於電漿處理裝置1中一般使用的種類的氣體即可，具體成分並無特別限定。The vacuum container 2 is, for example, a metal container, and is electrically grounded. In the vacuum chamber 2, a substrate S as a processing object is accommodated. The inside of the vacuum vessel 2 is evacuated by the vacuum evacuation device 6 , and the gas G corresponding to the processing content to be performed on the substrate S is introduced through the gas introduction port 21 . The gas G is not particularly limited as long as it is a type of gas generally used in the plasma processing apparatus 1 .

於真空容器2的內部設置有保持基板S的基板保持器8。於基板保持器8可設置對基板S進行加熱的加熱器，亦可施加偏置電壓。於電漿處理裝置1為電漿濺鍍裝置的情況下，於真空容器2內進而配置靶。A substrate holder 8 for holding a substrate S is provided inside the vacuum vessel 2 . A heater for heating the substrate S may be provided on the substrate holder 8, and a bias voltage may be applied thereto. When the plasma processing apparatus 1 is a plasma sputtering apparatus, a target is further arrange|positioned in the vacuum container 2.

天線部3包括電漿生成用的天線導體31以及覆蓋該天線導體31的天線罩32（第一絕緣物）。天線部3為直線狀，且以於真空容器2內與基板S相向的方式設置。具體而言，天線部3於真空容器2內的基板S的上方以沿著基板S的表面的方式（例如，與基板S的表面實質上平行地）配置。配置於真空容器2內的天線部3可為一個，亦可為多個。The antenna unit 3 includes an antenna conductor 31 for plasma generation and a radome 32 (first insulator) covering the antenna conductor 31 . The antenna unit 3 has a linear shape and is provided so as to face the substrate S in the vacuum vessel 2 . Specifically, the antenna unit 3 is arranged along the surface of the substrate S (for example, substantially parallel to the surface of the substrate S) above the substrate S in the vacuum container 2 . The antenna part 3 arrange|positioned in the vacuum container 2 may be one or multiple.

天線導體31例如由銅、鋁、該些的合金、不鏽鋼等形成。天線導體31為直線狀。另外，天線導體31亦可為筒狀。於此情況下，藉由在天線導體31內的中空部流動冷卻水等冷媒，可對天線導體31進行冷卻。再者，天線導體31並不限定於所述形狀，例如亦可為不具有中空部的實心形狀。The antenna conductor 31 is formed of, for example, copper, aluminum, an alloy thereof, stainless steel, or the like. The antenna conductor 31 is linear. In addition, the antenna conductor 31 may also be cylindrical. In this case, the antenna conductor 31 can be cooled by flowing a coolant such as cooling water through the hollow portion in the antenna conductor 31 . In addition, the antenna conductor 31 is not limited to the said shape, For example, the solid shape which does not have a hollow part may be sufficient.

天線導體31的其中一個端部31a貫通真空容器2的其中一個側壁2a上所設置的壁面開口部22，天線導體31的另一個端部31b貫通真空容器2的與側壁2a相向的另一個側壁2b上所設置的壁面開口部22。於各壁面開口部22設置絕緣物（例如絕緣凸緣）23，天線導體31的端部31a、端部31b分別使用O型環等氣密地貫通絕緣物23，隔著絕緣物23而由真空容器2予以支撐。藉此，天線導體31以與真空容器2電性絕緣的狀態受到支撐。再者，絕緣物23的材質例如為氧化鋁等陶瓷、石英等，但並不限定於該些。One end 31a of the antenna conductor 31 passes through the wall opening 22 provided on one of the side walls 2a of the vacuum container 2, and the other end 31b of the antenna conductor 31 passes through the other side wall 2b of the vacuum container 2 facing the side wall 2a. The wall opening 22 provided on it. An insulator (for example, an insulating flange) 23 is provided at each wall surface opening 22, and the ends 31a and 31b of the antenna conductor 31 are airtightly penetrated through the insulator 23 by using an O-ring or the like, respectively, and separated by a vacuum through the insulator 23. The container 2 is supported. Accordingly, the antenna conductor 31 is supported in a state of being electrically insulated from the vacuum container 2 . In addition, although the material of the insulator 23 is ceramics, such as alumina, quartz, etc., for example, it is not limited to these.

天線罩32是保護天線導體31的絕緣物。本實施方式的天線罩32是覆蓋天線導體31的直線狀的管體，與天線導體31設置於同軸上。天線罩32的兩端部由絕緣物23或天線導體31予以支撐。天線罩32的材質例如為石英、氧化鋁、氮化矽、碳化矽、矽等絕緣物，但並不限定於該些。再者，天線罩32亦可為形成於天線導體31的表面且經被覆的絕緣物。The radome 32 is an insulator that protects the antenna conductor 31 . The radome 32 of the present embodiment is a linear pipe body covering the antenna conductor 31 and is provided coaxially with the antenna conductor 31 . Both ends of the radome 32 are supported by the insulator 23 or the antenna conductor 31 . The material of the radome 32 is, for example, insulating materials such as quartz, alumina, silicon nitride, silicon carbide, and silicon, but is not limited thereto. Furthermore, the radome 32 may also be an insulator formed on the surface of the antenna conductor 31 and covered.

高頻電源4用於向天線導體31供給高頻電力。高頻電源4對天線導體31施加的高頻電壓的頻率例如為一般的13.56 MHz，但並不限於此。The high-frequency power supply 4 is used to supply high-frequency power to the antenna conductor 31 . The frequency of the high-frequency voltage applied to the antenna conductor 31 by the high-frequency power supply 4 is, for example, generally 13.56 MHz, but is not limited thereto.

高頻電源4經由阻抗可變器41而與天線導體31的其中一個端部31a連接。天線導體31的另一個端部31b電性接地，但亦可經由其他的阻抗可變器41而與其他的天線導體31連接。The high-frequency power supply 4 is connected to one end portion 31 a of the antenna conductor 31 via a variable impedance transformer 41 . The other end 31 b of the antenna conductor 31 is electrically grounded, but may be connected to another antenna conductor 31 through another impedance variable transformer 41 .

於所述結構的電漿處理裝置1中，藉由自高頻電源4經由阻抗可變器41向天線導體31供給高頻電力，於天線導體31流動高頻電流。藉此，於真空容器2內生成電漿P。所生成的電漿P擴散至基板S或靶的附近，藉由該電漿P實施以上所述的處理。In the plasma processing apparatus 1 having the above configuration, a high-frequency current flows through the antenna conductor 31 by supplying high-frequency power from the high-frequency power source 4 to the antenna conductor 31 through the impedance variable transformer 41 . Thereby, plasma P is generated in the vacuum container 2 . The generated plasma P diffuses to the vicinity of the substrate S or the target, and the above-mentioned processing is performed by the plasma P.

（法拉第屏蔽件的結構） 圖2是概略性地表示天線部3的結構的立體圖。圖2的上段是自上方觀察天線部3的圖，圖2的下段是自側面觀察天線部3的圖。圖3是圖2的A-A線處的向視剖面圖。再者，於圖2中，省略了阻抗可變器41。 (Structure of Faraday Shield) FIG. 2 is a perspective view schematically showing the configuration of the antenna unit 3 . The upper part of FIG. 2 is a view of the antenna unit 3 viewed from above, and the lower part of FIG. 2 is a view of the antenna unit 3 viewed from the side. Fig. 3 is a cross-sectional view taken along line A-A of Fig. 2 . Furthermore, in FIG. 2 , the impedance variable device 41 is omitted.

如圖2及圖3所示，本實施方式的天線部3更包括法拉第屏蔽件33（以下簡稱為「屏蔽件33」）。屏蔽件33設置於天線罩32的外表面，且電性接地。再者，屏蔽件33可直接接地於大地，亦可連接於高頻電源4的接地端（ground，GND）。As shown in FIG. 2 and FIG. 3 , the antenna unit 3 of this embodiment further includes a Faraday shield 33 (hereinafter simply referred to as “shield 33 ”). The shield 33 is disposed on the outer surface of the radome 32 and is electrically grounded. Furthermore, the shielding member 33 can be directly grounded to the ground, or can be connected to the ground terminal (ground, GND) of the high frequency power supply 4 .

關於屏蔽件33，材質為銅、不鏽鋼、鋁等導電性的金屬，且藉由蒸鍍、鍍敷、薄板的貼附等形成。再者，屏蔽件33的膜厚只要為電流流動的程度的膜厚即可，理想的是10 nm～5 mm。The shield 33 is made of a conductive metal such as copper, stainless steel, or aluminum, and is formed by vapor deposition, plating, or attachment of a thin plate. In addition, the film thickness of the shielding material 33 should just be the film thickness of the grade which electric current flows, and it is desirable that it is 10 nm - 5 mm.

屏蔽件33包括多個環部331以及多個連接部332。多個環部331配置於與天線導體31的軸垂直的平面上，並且相互分開地配置。多個連接部332將相鄰的環部331連接。於圖2及圖3的例子中，多個連接部332交替地配置於天線罩32的上部及下部。即，多個環部331各者自兩側連接兩個連接部332，所述兩個連接部332的連接位置相對於環部331的中心而相互對稱。由相鄰的環部331與將該相鄰的環部331連接的連接部332形成狹縫部333。The shield 33 includes a plurality of ring portions 331 and a plurality of connection portions 332 . The plurality of loop portions 331 are arranged on a plane perpendicular to the axis of the antenna conductor 31 and are arranged separately from each other. The plurality of connection parts 332 connect adjacent ring parts 331 . In the example shown in FIG. 2 and FIG. 3 , the plurality of connecting portions 332 are alternately arranged on the upper portion and the lower portion of the radome 32 . That is, each of the plurality of ring parts 331 is connected to two connection parts 332 from both sides, and the connection positions of the two connection parts 332 are symmetrical to each other with respect to the center of the ring part 331 . The slit portion 333 is formed by the adjacent ring portions 331 and the connecting portion 332 connecting the adjacent ring portions 331 .

於所述結構的天線部3中，若於天線導體31流動高頻電流，則於天線導體31的周圍產生高頻電場及高頻磁場。此時，於屏蔽件33的內部，由於所述高頻電場而引起帶電粒子的移動，藉此，所述高頻電場因屏蔽件33而降低。其結果，可降低電容耦合電漿的生成。In the antenna unit 3 having the above configuration, when a high-frequency current flows through the antenna conductor 31 , a high-frequency electric field and a high-frequency magnetic field are generated around the antenna conductor 31 . At this time, inside the shield 33 , the charged particles move due to the high-frequency electric field, whereby the high-frequency electric field is reduced by the shield 33 . As a result, generation of capacitively coupled plasma can be reduced.

另一方面，若於天線導體31流動高頻電流，則於屏蔽件33於與天線導體31平行的方向上產生感應電動勢。藉由該感應電動勢，於連接部332產生感應電流，但於狹縫部333未產生感應電流。因此，本實施方式的屏蔽件33與覆蓋天線導體31的整個周圍的屏蔽件相比，所述感應電流變小。其結果，所述高頻磁場的基於屏蔽件33的降低減少，可維持感應耦合電漿P的產生。On the other hand, when a high-frequency current flows through the antenna conductor 31 , an induced electromotive force is generated in the shield 33 in a direction parallel to the antenna conductor 31 . By this induced electromotive force, an induced current is generated in the connection portion 332 , but no induced current is generated in the slit portion 333 . Therefore, the shield 33 of the present embodiment has a smaller induced current than a shield covering the entire circumference of the antenna conductor 31 . As a result, the reduction of the high-frequency magnetic field due to the shield 33 is reduced, and the generation of the inductively coupled plasma P can be maintained.

另外，於本實施方式中，環部331中的兩個所述連接位置不同。藉此，於環部331中所述連接位置彼此之間的部分成為感應電流的路徑。由於該路徑與天線導體31的電流路徑正交，因此該路徑的電阻有效地變大。因此，由於所述感應電流變小，因此所述高頻磁場的基於屏蔽件33的降低進一步減少，其結果，能夠可靠地維持感應耦合電漿P的產生。另外，可降低屏蔽件33中的歐姆加熱。In addition, in this embodiment, the two connection positions in the ring portion 331 are different. Thereby, the portion between the connection positions in the ring portion 331 becomes a path of induced current. Since this path is orthogonal to the current path of the antenna conductor 31, the resistance of this path becomes effectively large. Therefore, since the induced current becomes smaller, the reduction of the high-frequency magnetic field due to the shield 33 is further reduced, and as a result, the generation of the inductively coupled plasma P can be reliably maintained. In addition, ohmic heating in the shield 33 can be reduced.

進而，於本實施方式中，環部331中的兩個所述連接位置相對於環部331的中心而相互對稱。藉此，所述電阻有效地成為最大。因此，由於所述感應電流成為最小，因此所述高頻磁場的基於屏蔽件33的降低成為最小，其結果，能夠更可靠地維持感應耦合電漿P的產生。另外，可進一步降低屏蔽件33中的歐姆加熱。Furthermore, in this embodiment, the two connection positions in the ring portion 331 are symmetrical to each other with respect to the center of the ring portion 331 . With this, the resistance is effectively maximized. Therefore, since the induced current is minimized, the reduction of the high-frequency magnetic field due to the shield 33 is minimized, and as a result, the generation of inductively coupled plasma P can be more reliably maintained. In addition, ohmic heating in the shield 33 can be further reduced.

（附記事項） 再者，於本實施方式中，多個連接部332配置於天線罩32的上部及下部，但亦可配置於天線罩32的兩側部。另外，環部331中的兩個所述連接位置只要不同即可，亦可相對於環部331的中心而不對稱。 (Additional notes) Furthermore, in this embodiment, the plurality of connection parts 332 are arranged on the upper and lower parts of the radome 32 , but they may also be arranged on both sides of the radome 32 . In addition, as long as the two connection positions in the ring portion 331 are different, they may be asymmetrical with respect to the center of the ring portion 331 .

另外，屏蔽件33亦可配置於天線罩32的內部。即，屏蔽件33可配置於天線導體31的周圍、且為不與天線導體31導通的任意位置。In addition, the shield 33 may also be disposed inside the radome 32 . That is, the shield 33 may be disposed around the antenna conductor 31 at any position that does not conduct with the antenna conductor 31 .

〔實施方式2〕 參照圖4對本發明的另一實施方式進行說明。本實施方式的電漿處理裝置1與圖1～圖3所示的電漿處理裝置1相比，天線部3的結構不同，其他結構相同。 [Embodiment 2] Another embodiment of the present invention will be described with reference to FIG. 4 . The plasma processing apparatus 1 of the present embodiment differs from the plasma processing apparatus 1 shown in FIGS. 1 to 3 in the structure of the antenna unit 3 , and the other structures are the same.

圖4是概略性地表示天線部3的結構的立體圖，且是自上方觀察天線部3的圖。本實施方式的天線部3與圖2及圖3所示的天線部3相比，不同點在於更包括屏蔽罩34（第二絕緣物），其他結構相同。FIG. 4 is a perspective view schematically showing the configuration of the antenna unit 3, and is a view of the antenna unit 3 viewed from above. The antenna unit 3 of this embodiment differs from the antenna unit 3 shown in FIGS. 2 and 3 in that it further includes a shield cover 34 (second insulator), and the other structures are the same.

屏蔽罩34是保護屏蔽件33的絕緣物。本實施方式的屏蔽罩34是覆蓋屏蔽件33的直線狀的管體，且與天線導體31設置於同軸上。屏蔽罩34的兩端部由絕緣物23或天線罩32予以支撐。屏蔽罩34的材質與能夠用作天線罩32的材質相同。再者，屏蔽罩34亦可為形成於天線罩32及屏蔽件33的表面且經被覆的絕緣物。The shield cover 34 is an insulator that protects the shield 33 . The shield cover 34 of the present embodiment is a linear tubular body that covers the shield 33 and is provided coaxially with the antenna conductor 31 . Both ends of the shield cover 34 are supported by the insulator 23 or the radome 32 . The material of the shield cover 34 is the same as that which can be used as the radome 32 . Furthermore, the shield 34 may also be an insulator formed on the surfaces of the radome 32 and the shield 33 and covered.

根據所述結構，屏蔽件33被屏蔽罩34覆蓋。藉此，可防止金屬粒子附著於屏蔽件33的狹縫部333而形成金屬膜，相鄰的環部331於連接部332以外導通。According to the structure, the shield 33 is covered by the shield case 34 . Thereby, metal particles can be prevented from adhering to the slit portion 333 of the shielding member 33 to form a metal film, and adjacent ring portions 331 are electrically connected outside the connection portion 332 .

（附記事項） 再者，於本實施方式中，屏蔽件33形成於天線罩32的外表面，但可形成於屏蔽罩34的內表面，亦可形成於屏蔽罩34的內部。 (Additional notes) Furthermore, in this embodiment, the shield 33 is formed on the outer surface of the radome 32 , but it may be formed on the inner surface of the shield 34 , or may be formed inside the shield 34 .

〔實施方式3〕 參照圖5對本發明的又一實施方式進行說明。本實施方式的電漿處理裝置1與圖1～圖4所示的電漿處理裝置1相比，天線部3的結構不同，其他結構相同。 [Embodiment 3] Still another embodiment of the present invention will be described with reference to FIG. 5 . The plasma processing apparatus 1 of the present embodiment differs from the plasma processing apparatus 1 shown in FIGS. 1 to 4 in the configuration of the antenna unit 3 , and the other configurations are the same.

圖5是概略性地表示天線部3的結構的立體圖，且是自上方觀察天線部3的圖。本實施方式的天線部3與圖4所示的天線部3相比，不同點在於在天線部3的中央部省略了屏蔽件33及屏蔽罩34，其他結構相同。即，於本實施方式中，屏蔽件33及屏蔽罩34設置於天線部3的兩端部。如此，屏蔽件33及屏蔽罩34亦可設置於天線導體31的一部分的周圍。FIG. 5 is a perspective view schematically showing the configuration of the antenna unit 3, and is a view of the antenna unit 3 viewed from above. The antenna unit 3 of this embodiment is different from the antenna unit 3 shown in FIG. 4 in that the shield 33 and the shield cover 34 are omitted in the center of the antenna unit 3 , and the other configurations are the same. That is, in this embodiment, the shield 33 and the shield case 34 are provided at both ends of the antenna unit 3 . In this way, the shield 33 and the shield case 34 may also be provided around a part of the antenna conductor 31 .

且說，真空容器2接地，對天線導體31施加高頻電壓。藉此，天線導體31與真空容器2的距離近的區域與其他區域相比，電場的強度有變大的傾向。In other words, the vacuum vessel 2 is grounded, and a high-frequency voltage is applied to the antenna conductor 31 . Accordingly, the intensity of the electric field tends to be larger in the area where the distance between the antenna conductor 31 and the vacuum vessel 2 is closer than in other areas.

與此相對，根據本實施方式，於天線導體31與真空容器2的距離近的天線部3的兩端部設置有屏蔽件33。藉此，可降低天線導體31與真空容器2的距離近的區域中的電場的強度。其結果，可有效果地降低電容耦合電漿的生成，從而可改善感應耦合電漿P的分佈。On the other hand, according to the present embodiment, shields 33 are provided at both ends of the antenna unit 3 where the distance between the antenna conductor 31 and the vacuum container 2 is short. Thereby, the intensity of the electric field in the area where the distance between the antenna conductor 31 and the vacuum container 2 is close can be reduced. As a result, generation of capacitively coupled plasma can be effectively reduced, and distribution of inductively coupled plasma P can be improved.

〔實施例〕 關於圖1～圖3所示的電漿處理裝置1，對將屏蔽件33的尺寸進行了各種變更的實施例進行說明。此處，屏蔽件33的狹縫間距為圖2中由SP表示的長度，屏蔽件33的狹縫寬度為圖2中由SW表示的長度。另外，本實施例的屏蔽件33的材質為SUS316，厚度為10 μm，狹縫寬度SW小於0.5 mm。 [Example] About the plasma processing apparatus 1 shown in FIGS. 1-3, the Example which changed the dimension of the shield 33 variously is demonstrated. Here, the slit pitch of the shield 33 is a length indicated by SP in FIG. 2 , and the slit width of the shield 33 is a length indicated by SW in FIG. 2 . In addition, the material of the shield 33 in this embodiment is SUS316, the thickness is 10 μm, and the slit width SW is less than 0.5 mm.

其結果判明，於環部331的寬度（SP-SW）為15 mm以下的情況下，磁場強度的降低量少而理想。進而，於環部331的寬度為5 mm以下的情況下，磁場強度的降低量更少而更理想。再者，環部331的寬度的下限值由製造能力、容許的電阻值等各種條件決定。As a result, it was found that when the width (SP-SW) of the ring portion 331 is 15 mm or less, the amount of decrease in the magnetic field intensity is small, which is ideal. Furthermore, in the case where the width of the ring portion 331 is 5 mm or less, the decrease in the magnetic field intensity is less, which is more preferable. Note that the lower limit of the width of the ring portion 331 is determined by various conditions such as manufacturing capacity and allowable resistance value.

〔總結〕 本發明的形態1的電漿處理裝置為如下結構，即包括：真空容器，於內部收容被處理物；以及直線狀的天線部，設置於所述真空容器的內部，且用於在所述真空容器的內部產生電漿，該天線部包括：天線導體，於其中流動高頻電流；以及法拉第屏蔽件，設置於該天線導體的至少一部分的周圍。 〔Summarize〕 A plasma processing apparatus according to aspect 1 of the present invention has a structure including: a vacuum vessel for accommodating an object to be processed; Plasma is generated inside the container, and the antenna unit includes: an antenna conductor through which a high-frequency current flows; and a Faraday shield provided around at least a part of the antenna conductor.

根據所述結構，由天線導體產生的電場被法拉第屏蔽件遮蔽，因此可降低向外部的傳播。藉此，可降低電容耦合電漿的生成。According to the above structure, the electric field generated by the antenna conductor is shielded by the Faraday shield, so the propagation to the outside can be reduced. Thereby, the generation of capacitively coupled plasma can be reduced.

本發明的形態2的電漿處理裝置如所述形態1，其中可為，所述法拉第屏蔽件設置於所述天線導體與所述真空容器的距離近的位置。於此情況下，可降低所述天線導體與所述真空容器的距離近的區域中的電場的強度。其結果，可有效果地降低電容耦合電漿的產生。The plasma processing apparatus of the aspect 2 of this invention is the said aspect 1, WHEREIN: The said Faraday shield is provided in the position where the distance of the said antenna conductor and the said vacuum container is short. In this case, the intensity of the electric field in a region where the distance between the antenna conductor and the vacuum container is close can be reduced. As a result, generation of capacitively coupled plasma can be effectively reduced.

本發明的形態3的電漿處理裝置如所述形態1、形態2，其中可為，所述法拉第屏蔽件包括：多個環部，設置於所述天線導體的周圍，且相互分開；以及連接部，將相鄰的環部彼此連接。The plasma processing device according to the third aspect of the present invention is as described in the first aspect and the second aspect, wherein the Faraday shield includes: a plurality of rings arranged around the antenna conductor and separated from each other; part, connecting adjacent ring parts to each other.

於此情況下，由相鄰的兩個環部與將該兩個環部連接的連接部形成狹縫部。此時，若於所述天線導體流動高頻電流，則於所述連接部產生感應電流，但於所述狹縫部未產生感應電流。因此，所述法拉第屏蔽件與覆蓋天線導體的整個周圍的屏蔽件相比，所述感應電流變小，其結果，由所述天線導體產生的高頻磁場的基於所述法拉第屏蔽件的降低減少，可維持感應耦合電漿的產生。In this case, the slit part is formed by two adjacent ring parts and the connection part which connects these two ring parts. At this time, if a high-frequency current flows through the antenna conductor, an induced current is generated in the connection portion, but no induced current is generated in the slit portion. Therefore, compared with a shield covering the entire periphery of the antenna conductor, the Faraday shield reduces the induced current, and as a result, the reduction of the high-frequency magnetic field generated by the antenna conductor due to the Faraday shield is reduced. , can maintain the generation of inductively coupled plasma.

本發明的形態4的電漿處理裝置如所述形態3，其中較佳為，自某個環部的兩側分別連接的兩個連接部與所述某個環部的連接位置不同。於此情況下，於所述某個環部中所述連接位置彼此之間的部分成為所述感應電流的路徑。由於該路徑與所述天線導體的電流路徑正交，因此該路徑的電阻有效地變大。因此，所述天線導體中的由高頻電流產生的感應電流變小，其結果，由所述高頻電流產生的高頻磁場的基於所述法拉第屏蔽件的降低進一步變少。In the plasma processing apparatus according to aspect 4 of the present invention, as in the above-mentioned aspect 3, it is preferable that the connection positions of the two connection parts respectively connected from both sides of a certain ring part are different from the connection positions of the certain ring part. In this case, a portion between the connection positions in the certain ring portion becomes a path of the induced current. Since this path is orthogonal to the current path of the antenna conductor, the resistance of this path becomes effectively high. Therefore, the induction current generated by the high-frequency current in the antenna conductor is reduced, and as a result, the reduction of the high-frequency magnetic field generated by the high-frequency current due to the Faraday shield is further reduced.

本發明的形態5的電漿處理裝置如所述形態4，其中進而佳為，所述兩個連接部的連接位置相對於所述環部的中心而相互對稱。於此情況下，所述電阻有效地成為最大。因此，所述天線導體中的由高頻電流產生的感應電流成為最小，其結果，由所述高頻電流產生的高頻磁場的基於所述法拉第屏蔽件的降低成為最小。Aspect 5 of the present invention is a plasma processing apparatus as described in Aspect 4, wherein it is further preferable that the connection positions of the two connection parts are symmetrical to each other with respect to the center of the ring part. In this case, the resistance is effectively at a maximum. Therefore, the induced current in the antenna conductor due to the high-frequency current is minimized, and as a result, the reduction of the high-frequency magnetic field due to the high-frequency current due to the Faraday shield is minimized.

本發明的形態6的電漿處理裝置如所述形態3～形態5，其中較佳為，所述環部的寬度為15 mm以下。於此情況下，可抑制高頻磁場的下降。再者，所述環部的寬度的下限值由製造能力、容許的電阻值等各種條件決定。The plasma processing apparatus according to aspect 6 of the present invention is as described in aspects 3 to 5, wherein preferably, the width of the ring portion is 15 mm or less. In this case, the drop of the high-frequency magnetic field can be suppressed. In addition, the lower limit value of the width of the ring portion is determined by various conditions such as manufacturability and allowable resistance value.

本發明的形態7的電漿處理裝置如所述形態1～形態6，其中較佳為，所述天線部更包括設置於所述天線導體與所述法拉第屏蔽件之間的第一絕緣物。於此情況下，可防止所述天線導體與所述法拉第屏蔽件之間的導通。Aspect 7 of the present invention is the plasma processing apparatus according to the above-mentioned aspects 1 to 6, wherein preferably, the antenna unit further includes a first insulator provided between the antenna conductor and the Faraday shield. In this case, conduction between the antenna conductor and the Faraday shield can be prevented.

本發明的形態8的電漿處理裝置如所述形態1～形態7，其中可為，所述天線部更包括覆蓋所述法拉第屏蔽件的周圍的第二絕緣物。於此情況下，可防止金屬粒子附著於所述法拉第屏蔽件而形成金屬膜，於所述法拉第屏蔽件中流動的電流的路徑變短。A plasma processing apparatus according to an eighth aspect of the present invention is the same as the above-mentioned aspects 1 to 7, wherein the antenna unit may further include a second insulator covering the periphery of the Faraday shield. In this case, metal particles are prevented from being attached to the Faraday shield to form a metal film, and the path of the current flowing through the Faraday shield is shortened.

本發明並不限定於所述的各實施方式，能夠於請求項所示的範圍內進行各種變更，適當組合不同的實施方式中分別揭示的技術手段而獲得的實施方式亦包含於本發明的技術範圍內。The present invention is not limited to the above-described embodiments, and various changes can be made within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technology of the present invention. within range.

1:電漿處理裝置 2:真空容器 2a、2b:側壁 3:天線部 4:高頻電源 6:真空排氣裝置 8:基板保持器 21:氣體導入口 22:壁面開口部 23:絕緣物（絕緣凸緣） 31:天線導體 31a、31b:端部 32:天線罩（第一絕緣物） 33:法拉第屏蔽件（屏蔽件） 34:屏蔽罩（第二絕緣物） 41:阻抗可變器 331:環部 332:連接部 333:狹縫部 A-A:線 G:氣體 S:基板 SP、SW:長度 P:電漿（感應耦合電漿） 1: Plasma treatment device 2: Vacuum container 2a, 2b: side wall 3: Antenna 4: High frequency power supply 6: Vacuum exhaust device 8: Substrate holder 21: Gas inlet 22: Wall opening 23: Insulator (insulation flange) 31: Antenna conductor 31a, 31b: ends 32: Radome (first insulator) 33: Faraday shield (shield) 34: Shielding cover (second insulator) 41: Impedance variable 331: ring department 332: connection part 333: Slit A-A: line G: gas S: Substrate SP, SW: Length P: plasma (inductively coupled plasma)

圖1是示意性地表示本發明的一實施方式的電漿處理裝置的結構的剖面圖。 圖2是概略性地表示所述電漿處理裝置中的天線部的結構的立體圖。 圖3是圖2的A-A線處的向視剖面圖。 圖4是概略性地表示本發明的另一實施方式的電漿處理裝置中的天線部的結構的立體圖。 圖5是概略性地表示本發明的又一實施方式的電漿處理裝置中的天線部的結構的立體圖。 FIG. 1 is a cross-sectional view schematically showing the structure of a plasma processing apparatus according to one embodiment of the present invention. Fig. 2 is a perspective view schematically showing the configuration of an antenna unit in the plasma processing apparatus. Fig. 3 is a cross-sectional view taken along line A-A of Fig. 2 . 4 is a perspective view schematically showing the configuration of an antenna unit in a plasma processing apparatus according to another embodiment of the present invention. 5 is a perspective view schematically showing the configuration of an antenna unit in a plasma processing apparatus according to still another embodiment of the present invention.

3:天線部 3: Antenna

4:高頻電源 4: High frequency power supply

31:天線導體 31: Antenna conductor

32:天線罩(第一絕緣物) 32: Radome (first insulator)

33:法拉第屏蔽件(屏蔽件) 33: Faraday shield (shield)

331:環部 331: ring department

332:連接部 332: connection part

333:狹縫部 333: Slit

A-A:線 A-A: line

SP、SW:長度 SP, SW: Length

Claims (8)

一種電漿處理裝置，包括： 真空容器，於內部收容被處理物；以及 直線狀的天線部，設置於所述真空容器的內部，且用於在所述真空容器的內部產生電漿， 所述天線部包括： 天線導體，於其中流動高頻電流；以及 法拉第屏蔽件，設置於所述天線導體的至少一部分的周圍。 A plasma treatment device, comprising: Vacuum container containing the object to be processed inside; and a linear antenna part provided inside the vacuum container for generating plasma inside the vacuum container, The antenna part includes: Antenna conductors through which high-frequency current flows; and A Faraday shield is disposed around at least a portion of the antenna conductor. 如請求項1所述的電漿處理裝置，其中所述法拉第屏蔽件設置於所述天線導體與所述真空容器的距離近的位置。The plasma processing apparatus according to claim 1, wherein the Faraday shield is disposed at a position where the distance between the antenna conductor and the vacuum container is short. 如請求項1或請求項2所述的電漿處理裝置，其中所述法拉第屏蔽件包括： 多個環部，設置於所述天線導體的周圍，且相互分開；以及 連接部，將相鄰的環部彼此連接。 The plasma processing device as claimed in claim 1 or claim 2, wherein the Faraday shield comprises: a plurality of loops disposed around the antenna conductor and separated from each other; and The connection part connects adjacent ring parts to each other. 如請求項3所述的電漿處理裝置，其中自某個環部的兩側分別連接的兩個連接部與所述某個環部的連接位置不同。The plasma processing device according to claim 3, wherein the two connecting parts respectively connected from both sides of a certain ring part are connected at different positions from the certain ring part. 如請求項4所述的電漿處理裝置，其中所述兩個連接部的連接位置相對於所述環部的中心而相互對稱。The plasma processing device according to claim 4, wherein the connecting positions of the two connecting parts are symmetrical to each other with respect to the center of the ring part. 如請求項3至請求項5中任一項所述的電漿處理裝置，其中所述環部的寬度為15 mm以下。The plasma processing device according to any one of claim 3 to claim 5, wherein the width of the ring portion is 15 mm or less. 如請求項1至請求項6中任一項所述的電漿處理裝置，其中所述天線部更包括第一絕緣物，所述第一絕緣物設置於所述天線導體與所述法拉第屏蔽件之間。The plasma processing device according to any one of claim 1 to claim 6, wherein the antenna part further includes a first insulator, and the first insulator is disposed between the antenna conductor and the Faraday shield between. 如請求項1至請求項7中任一項所述的電漿處理裝置，其中所述天線部更包括第二絕緣物，所述第二絕緣物覆蓋所述法拉第屏蔽件的周圍。The plasma processing apparatus according to any one of claim 1 to claim 7, wherein the antenna part further includes a second insulator, and the second insulator covers a periphery of the Faraday shield.
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