CN105472857B - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN105472857B CN105472857B CN201510632845.7A CN201510632845A CN105472857B CN 105472857 B CN105472857 B CN 105472857B CN 201510632845 A CN201510632845 A CN 201510632845A CN 105472857 B CN105472857 B CN 105472857B
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Abstract
The present invention provides a kind of plasma processing apparatus, it is possible to increase the uniformity of plasma ion density.Plasma processing apparatus has：Chamber, object maintaining part, the object of process object is maintained as in chamber, the number of turn is less than at least one inductive type antenna of a circle, high frequency electric source, at least one inductive type antenna supply high frequency electric power, at least one antenna maintaining part, to make at least one inductive type antenna keep at least one inductive type antenna respectively relative to a wall portion from a manner of a wall portion of chamber is prominent into chamber；In a manner of the direction for the line segment that at least one day wire retaining portions are not connected by that can change the both ends of the corresponding inductive type antenna made at least one inductive type antenna in the face intersected with the projected direction of the inductive type antenna, in inductive type antenna corresponding to the holding of the both ends of corresponding inductive type antenna.
Description
Technical field
The plasma processing apparatus of defined processing is carried out the present invention relates to generation plasma.
Background technology
As this plasma processing apparatus, patent document 1 discloses the device of following inductive mode,
That is, to not surrounding once terminating in week and than the antenna that forms of the short conductor by wire or tabular of length of 1/4 wavelength of high frequency
Supply high frequency electric power produces high frequency magnetic field, produces plasma using the magnetic field, the table of film formation etc. is carried out to real estate
Face is handled.The device sets more antennas respectively in flat shape for 4 sides of the vacuum tank of rectangle, by being set on 4 sides
More antennas ground supply high frequency electric power side by side, to carry out the processing to large-area substrates.
Patent document 1：No. 3751909 publications of Japanese Patent Publication No.
For example, in order to form the film of uniform film thickness using plasma CVD or be carried out using plasma etching etc.
Uniform processing, it is desirable to make the plasma ion density near object in space uniform.
But in plasma CVD, reaction process in chamber be by the pressure in chamber, the flow of process gas,
The complicated technique of the influences such as the distance between wall in component, each antenna and chamber.Therefore, patent document 1 grade from
In daughter processing unit, the problem of plasma ion density homogenization being difficult to make near object in space be present.Separately
Outside, plasma processing apparatus such as with 1 antenna, antenna number it is few in the case of, because of the shadow of the wall in chamber
Sound becomes much larger, and the problem of there is also being difficult to homogenize plasma ion density.
The content of the invention
The present invention proposes to solve the above problems, its object is to provide one kind can improve plasma from
The technology of the uniformity of sub- density.
In order to solve the above problems, the plasma processing apparatus of first method has：
Chamber,
Object maintaining part, the object of process object is maintained as in the chamber,
At least one inductive type antenna, the number of turn are less than a circle,
High frequency electric source, at least one inductive type antenna supply high frequency electric power,
At least one antenna maintaining part so that at least one inductive type antenna from a wall portion of the chamber to
Prominent mode, at least one inductive type antenna is kept relative to a wall portion respectively in the chamber；
Each antenna maintaining part of at least one antenna maintaining part, respectively so that at least one electricity can will be made
Feel coupling type antenna in corresponding inductive type antenna both ends connection line segment direction with the inductive type
The mode changed in the face that the projected direction of antenna intersects, described in the holding of the both ends of the corresponding inductive type antenna
Corresponding inductive type antenna.
The plasma processing apparatus of second method on the basis of the plasma processing apparatus of first method, it is described extremely
A few inductive type antenna is multiple inductive type antennas, and at least one antenna maintaining part is multiple antennas
Maintaining part,
The multiple antenna maintaining part makes the multiple inductive type antenna respective two to be able to independent change
The mode of the direction of the line segment of end connection keeps the multiple inductive type antenna.
The plasma processing apparatus of Third Way is described more on the basis of the plasma processing apparatus of second method
Individual antenna maintaining part keeps institute in a manner of the multiple inductive type antenna is arranged in a row along predetermined imaginary axis
Multiple inductive type antennas are stated, the imaginary axis is the imaginary axis extended along a wall portion.
The plasma processing apparatus of fourth way is on the basis of the plasma processing apparatus of Third Way, Gai Dengli
Daughter processing unit also has a pair of shield members of tabular, and the pair of shield member is with across being arranged in the described more of a row
The mode of individual inductive type antenna opposite each other, erect and set from a wall portion for the chamber.
The plasma processing apparatus of 5th mode is on the basis of the plasma processing apparatus of fourth way, and described one
At least one shield member in shield member is arranged to, position on the imaginary axis can be changed and away from the chamber
A wall portion height in it is at least one.
The corona treatment dress of the plasma processing apparatus of 6th mode either type in the first to the 5th mode
On the basis of putting, at least one day wire retaining portions can not be kept at least one inductive type antenna
The tabular component of corresponding inductive type antenna,
It is mutually corresponding in using at least one inductive type antenna and at least one antenna maintaining part
When inductive type antenna and antenna maintaining part are to define respective antenna and corresponding maintaining part,
A wall portion for the chamber is provided with antenna through hole, and the antenna is inserted into by described right with through hole
The respective antenna for answering maintaining part to keep, and with a manner of it can be closed by the corresponding maintaining part with the corresponding guarantor
Shape corresponding to portion is held,
The periphery difference of the antenna through hole in the peripheral part and a wall portion of the corresponding maintaining part
The first and second mounting structure is provided with, is respectively in the corresponding maintaining part along the antenna with the circumference of through hole
During multiple anglecs of rotation, the first and second mounting structure is so that the corresponding maintaining part blocks the side of the antenna through hole
The peripheral part of the corresponding maintaining part is detachably arranged on the periphery of the antenna through hole by formula,
The corresponding maintaining part for keeping the respective antenna make the respective antenna into the chamber it is prominent and close
Close in the state of the antenna through hole, using the described first and second mounting structure by the peripheral part installed in described
On periphery.
The plasma processing apparatus of 7th mode is on the basis of the plasma processing apparatus of the 6th mode, described
First mounting structure that the peripheral part of corresponding maintaining part is set is multiple bolt through holes, and the multiple bolt is used
Through hole is formed on the first concentric circles on the peripheral part and is inserted into bolt,
It is multiple blind holes in second mounting structure that the antenna is set with the periphery of through hole, it is described more
Individual blind hole is formed on the forward surface opposite with the antenna maintaining part in the periphery and with described first concentric
On second concentric circles of circle same diameter, the multiple blind hole is in the forward surface opening, and formed with energy on inner peripheral surface
Enough internal threads screwed togather with penetrating the bolt with the bolt of through hole.
The plasma processing apparatus of eighth mode is described more on the basis of the plasma processing apparatus of the 7th mode
Individual bolt with through hole to form on first concentric circles at equal intervals, and the multiple blind hole to form in institute at equal intervals
State on the second concentric circles,
The multiple bolt is the multiple of the number of the opposing party with the number of the side in through hole and the multiple blind hole.
The plasma processing apparatus of 9th mode is described more on the basis of the plasma processing apparatus of eighth mode
Individual bolt with the number of through hole and the number of the multiple blind hole be respectively selected from 4,6,8,12 and 24 it is arbitrary
Number.
The plasma processing apparatus of tenth mode is described more on the basis of the plasma processing apparatus of the 7th mode
The number of individual bolt through hole is more than the number of the multiple blind hole.
【Invention effect】
According to the invention of first method, antenna maintaining part in the projected direction with the inductive type antenna can intersect
Face in change make corresponding to inductive type antenna both ends connection line segment direction mode, in the inductive type
The both ends of antenna keep the inductive type antenna.But just by the number of turn be less than 1 circle inductive type antenna carry out etc. from
For the plasma ion density of the process gas of daughter, in the face vertical with the projected direction of inductive type antenna
Interior, the density on the direction vertical with making the line segment that the both ends of inductive type antenna are connected is higher than on the line segment direction
Density.Therefore, the direction of inductive type antenna is changed by using antenna maintaining part, it is possible to increase plasma ion is close
The uniformity of degree.
According to the invention of second method, make multiple respective both ends of inductive type antenna due to can independently change
The direction of the line segment of portion's connection, so the uniformity of plasma ion density can be improved in a wide range.
According to the invention of Third Way, because multiple inductive type antennas are arranged in a row along imaginary axis, so energy
Enough uniformities that plasma ion density is improved in the wide scope of width, wall portion extension of the imaginary axis along chamber.
According to the invention of fourth way, a pair of shield members of tabular are with across the multiple inductive types for being arranged in a row
The mode of antenna opposite each other is erect from a wall portion of chamber and set.Therefore, the electricity by both ends is improved by using shield member
Plasma ion density caused by feeling coupling type antenna, can suppress the decline of the plasma ion density.
According to the invention of the 5th mode, at least one in a pair of shield members, which is configured to change, is providing multiple electricity
Feel at least one in the height of the position on the imaginary direction of principal axis of the orientation of coupling type antenna and the wall portion away from chamber.
By making shield member close to inductive type antenna, it is possible to increase plasma ion density.In addition, even if improve shielding structure
The height of part can also improve plasma ion density.Therefore, it is possible to more subtly adjust the inductive type day by both ends
Plasma ion density caused by line, further suppress the decline of plasma ion density.
According to the invention of the 6th mode, antenna through hole is provided with a wall portion of chamber, the antenna through hole
With with the antenna maintaining part (corresponding maintaining part) as tabular component corresponding to shape and by the antenna maintaining part close.And
And the periphery of the antenna through hole in the peripheral part of antenna maintaining part and a wall portion, be respectively arranged with first and
Second mounting structure, when corresponding maintaining part is respectively at multiple anglecs of rotation along antenna with the circumference of through hole, first with
And second mounting structure by enable antenna maintaining part block antenna the peripheral part of antenna maintaining part is filled in a manner of through hole
It is arranged on the periphery of antenna through hole with unloading.Therefore, can be easily by changing the anglec of rotation of corresponding maintaining part
Change the direction (direction for the line segment for connecting both ends) of the respective antenna kept by corresponding maintaining part.
According to the invention of the 7th mode, by making the bolt of in-and-out bolt through hole and the inner peripheral surface formation in blind hole
Internal screw-thread screw, the peripheral part of antenna maintaining part and antenna can be firmly fixed with the periphery of through hole, improve chamber
Interior seal.
According to the invention of eighth mode, multiple bolts are the opposing party with the number of the side in through hole and multiple blind holes
The multiple of number.Therefore, it is possible to make, the part of the side in multiple bolt through holes and multiple blind holes and the opposing party's is complete
The number of the anglec of rotation of the corresponding maintaining part of portion's alignment is few in the number of unnecessary bolt through hole and the number of blind hole
The number of one side.Thus, also can be by inductive type day even if cutting down bolt through hole and the number of the side in blind hole
Line (line segment for connecting the both ends of inductive type antenna) is set as multiple directions.
According to the invention of the 9th mode, the number of multiple bolt through holes and the number of multiple blind holes be respectively from 4,6,
8th, the arbitrary number selected in 12 and 24.If increasing the number of bolt through hole and blind hole, more spiral shells are used
Antenna maintaining part is more solidly fixed to the periphery of antenna through hole by bolt, therefore improves the seal in chamber, and another
On the one hand, the increase of the manufacturing cost of bolt through hole and blind hole is made.Therefore, if determining bolt insertion as in the present invention
Hole and the respective number of blind hole, then the raising of airtight performance and the decline of cost in chamber are realized simultaneously.
According to the invention of the tenth mode, because the number of the low bolt through hole of the manufacturing cost compared with blind hole is unnecessary blind
The number in hole, so the manufacturing cost of device can be reduced.
Brief description of the drawings
Fig. 1 is the YZ side views of the schematic configuration for the plasma processing apparatus for schematically showing embodiment.
Fig. 2 is Fig. 1 A-A sectional views.
Fig. 3 is for illustrating the figure of the one of the configuration of inductive type antenna.
Fig. 4 is the top view of the schematic configuration for the antenna maintaining part for schematically showing Fig. 2.
Fig. 5 is Fig. 4 B-B sectional views.
Fig. 6 is Fig. 4 C-C sectional views.
Fig. 7 is the stereogram for the schematic configuration for schematically showing the bottom plate with multiple antenna maintaining parts.
Fig. 8 is the measure example that the plasma ion density distribution using 1 LIA generation is represented in the form of contour map
Figure.
Fig. 9 is to represent figure of the plasma ion density distribution relative to the measure example of the variation of pressure with curve form.
Figure 10 is the figure for the measure example that the plasma ion density distribution using 2 LIA generations is represented with curve form.
Figure 11 be schematically shown in the form of contour map using be not provided with around barricade 1 LIA generation etc.
The figure of gas ions density profile.
Figure 12 is the YZ side views of the other structures example for the plasma processing apparatus for schematically showing embodiment.
Wherein, description of reference numerals is as follows：
100th, 100A plasma processing apparatus
1 processing chamber housing
2 keep conveying unit (object maintaining part)
9 substrates
11 top plates (wall portion)
12 antenna through holes
13 blind holes
4 plasma generating units
41 inductive type antennas
61 gas supply parts
80 antenna maintaining parts
83 bolt through holes
90 bearings
430 matching boxes
440 high frequency electric sources
C central points (midpoint)
K imaginary axis
L line segments
Embodiment
<Embodiment>
<1. the overall structure of plasma processing apparatus 100>
Fig. 1 is the YZ side views of the schematic configuration for the plasma processing apparatus 100 for schematically showing embodiment.Figure
2 be the sectional view observed from the A-A sections of Fig. 1 plasma processing apparatus 100, is schematically shown at plasma
Manage the XZ side views of the schematic configuration of device 100.Fig. 3 is the inductive type day for illustrating plasma processing apparatus 100
The figure of one of the configuration of line 41.
Plasma processing apparatus 100 is by plasma CVD (plasma-enhanced chemical vapor
deposition:Plasma enhanced chemical vapor deposition) in the object with film it is that substrate 9 is (such as used for solar batteries
The device of cvd film (such as diaphragm) is formed on semiconductor substrate, also referred to as " base material ").
Plasma processing apparatus 100 has：Processing chamber housing 1, internally form processing SPACE V 1；Conveying unit 2 is kept, is protected
Substrate 9 (substrate 9 specifically, arranged on bearing 90) is held, and along defined transport path in defined conveyance direction
Substrate is transported in (diagram +Y direction)；Heating part 3, the substrate 9 transported is heated；Plasma generating unit 4, makes processing
SPACE V 1 produces plasma；Structural portion 5 is, it is specified that processing SPACE V 1.
In addition, plasma processing apparatus 100 has to the gas supply part 61 of the processing supply gas of SPACE V 1 and from
Manage the exhaust portion 7 of discharge gas in chamber 1.Above-mentioned each structural element is carried out in addition, plasma processing apparatus 100 has
The control unit 8 of control.
<Processing chamber housing 1>
Processing chamber housing (be also referred to as " vacuum chamber " or be only called " chamber ") 1 is that internally have to handle the hollow of SPACE V 1
Component.Here, processing SPACE V 1 refers to, the space of plasma CVD processing is performed using inductive type antenna 41 described later,
In the present embodiment, a processing SPACE V 1 is formed by structural portion 5.
The top plate 11 of processing chamber housing 1 is configured to, and lower surface 111 is flat-hand position, from the lower surface 111 to processing SPACE V 1
It has been provided projectingly inductive type antenna 41 and structural portion 5 (being described below).Processing chamber housing 1 to base plate vicinity match somebody with somebody
It is equipped with heating part 3.Provide to keep conveying unit 2 to the transport path of substrate 9 (along the road for illustrating Y-direction in the upside of heating part 3
Footpath).In addition, the side wall in the ± Y sides of processing chamber housing 1, which is provided with the carrying-in/carrying-out mouth being for example opened and closed by gate valve, (saves sketch map
Show).
On top plate 11, along the direction vertical with the conveyance direction of substrate 9, interval is provided with multiple in a row
(being illustrated as 4) antenna through hole 12 so that the top of the inductive type antenna 41 kept by antenna maintaining part 80 described later
44 side parts are held to be projected into processing SPACE V 1 side, the antenna through hole 12, which has, is inserted into inductive type antenna 41
Diameter.Antenna is less than the size of antenna maintaining part 80 with the size of through hole 12.Thus, antenna maintaining part 80 can make tool
In the state of the side of top 44 for having the inductive type antenna 41 at both ends 42,43 is partially project into processing chamber housing 1, day is blocked
Line through hole 12.
<Keep conveying unit 2>
Keep conveying unit 2 that bearing 90 is remained into flat-hand position, and via the carrying-in/carrying-out opening's edge formed in processing chamber housing 1
Transport path conveyance.The i.e. multiple substrates 9 of the object with film are configured with the upper surface of bearing 90 (in present embodiment
In, amount to 3 substrates 9 along Y-direction).In addition, in the top of transport path and in multiple bases with being transported in transport path
The opposite position of plate 9, formed with the processing SPACE V 1 for carrying out plasma CVD processing.
Specifically, keep conveying unit 2 that there are a pair of the carrying rollers 21 configured in opposite directions across transport path and make to remove for a pair
Send the drive division (omitting diagram) that the synchronous rotary of roller 21 drives.Bearing of trend (diagram Y of a pair of carrying rollers 21 along transport path
Direction) be provided with it is for example multigroup.In the structure shown here, by making each carrying roller 21 abut and rotate with the lower surface of bearing 90, prop up
Seat 90 is transported along transport path.As a result, the substrate 9 kept by bearing 90 is relative to inductive type antenna 41
Processing SPACE V 1 moves.
With processing SPACE V 1 opposite part of the conveying unit 2 in the transport path of substrate 9 is kept to make substrate 9 empty with processing
Between V1 it is opposite.Conveying unit 2 is kept to be maintained in substrate 9 and opposite processing SPACE V 1 relative to structure 5 on the opposite direction
The position of substrate 9.Can also substitute keep conveying unit 2, and use for example be fixed in the lower surface 111 of top plate 11 with processing
The opposite part of SPACE V 1 and the stage mechanism with can keep substrate 9 fixed mechanism with freely loading and unloading.In addition, conduct
Substrate 9, the substrate of the film-form extended in the conveyance direction for keeping conveying unit 2 can also be used.In this case, keep removing
Portion 2 is sent not have bearing 90, the back side (master with the interarea opposite side of film forming object of each carrying roller 21 and the substrate
Face) both ends directly contact transport substrate.
<Heating part 3>
Heating part 3 is the component to keeping the substrate 9 of conveyance to be heated by holding conveying unit 2, configures and is keeping transporting
The lower section (i.e. the lower section of the transport path of substrate 9) in portion 2.Heating part 3 for example can be made up of ceramic heater.In addition, may be used also
To be arranged on substrate 9 for being kept by holding conveying unit 2 etc. is cooled down after CVD processing in plasma processing apparatus 100
Mechanism.
<Plasma generating unit 4>
Plasma generating unit 4 makes processing SPACE V 1 produce plasma.Plasma generating unit 4 has multiple (this reality
Mode is applied as 4) the high frequency antenna i.e. inductive type antenna 41 of inductive type.Specifically, each inductive type antenna
41 be to be covered to form the pipe conductor bends of metal into the component of U-shaped with quartzy dielectric.Plasma generating unit 4
It is to excite unstrpped gas in processing SPACE V 1 to carry out plasmarized exciting portion.
As shown in figure 3, multiple inductive type antennas 41 arrange along imaginary axis K intervals (preferably with equal intervals),
Central point (midpoint) C at the both ends 42,43 of each inductive type antenna 41 is arranged on predetermined imaginary axis K.Each inductance coupling
A part (bottom of U-shaped point includes the part on top 44) for the side of holding conveying unit 2 of mould assembly antenna 41 is from top plate 11
It is prominent to holding conveying unit 2 side, i.e. in processing chamber housing 1.It is preferred that multiple inductive type antennas 41 under YZ side views along with base
Direction (particularly preferably as illustrated, the direction vertical with the conveyance direction of substrate 9 that the conveyance direction (Y-direction) of plate 9 is intersected
(X-direction)) arrangement.
In addition, in the example in the figures, 4 inductive types are set along the direction vertical with the conveyance direction of substrate 9
Antenna 41, but the number of inductive type antenna 41 is not necessarily 4, can suitably be selected according to size of processing chamber housing 1 etc.
Its number.In addition, inductive type antenna 41 can also be configured to rectangular or zigzag.Alternatively, it is also possible to according to processing chamber
Size of room 1 etc. sets an inductive type antenna 41.That is, plasma processing apparatus 100 has at least one inductance coupling
Mould assembly antenna.
One end of each inductive type antenna 41 is connected via matching box (Matching box) 430 with high frequency electric source 440.
In addition, the other end ground connection of each inductive type antenna 41.In the structure shown here, when from high frequency electric source 440 to each inductive type
When antenna 41 flows through high frequency electric (being, for example, specifically 13.56MHz high frequency electric), pass through the week of inductive type antenna 41
The electric field (high-frequency induction electric field) enclosed accelerates to electronics, so as to produce plasma inductively coupled plasma (Inductively
Coupled Plasma：ICP)).
As described above, 41 u-shaped shape of inductive type antenna.The inductive type antenna 41 of this U-shaped is suitable
It is less than the inductive coupling antenna of 1 circle in the number of turn, and compared with the number of turn is inductive coupling antenna more than 1 circle, inductance is small, therefore,
Decline in high frequency voltage caused by the both ends of inductive type antenna 41, suppress being drawn by static determinacy coupling for generated plasma
The swing in high frequency of the plasma potential risen.Therefore, electricity superfluous caused by being swung to the plasma potential of above earth potential
Son loss is lowered, and plasma potential is suppressed especially low.In addition, the high frequency antenna of this inductive type is disclosed in day
No. 3836636 publication of this special permission, No. 3836866 publications of Japanese Patent Publication No., No. 4451392 publications of Japanese Patent Publication No., Japan are special
Perhaps in No. 4852140 publication.
<Antenna maintaining part 80>
Multiple (diagrams 4) that top plate 11 is formed antenna with through hole 12 respectively by holding inductive type antenna 41
Multiple (being illustrated as 4) antenna maintaining parts 80 at both ends 42,43 block, to keep the seal in processing chamber housing 1.
Antenna maintaining part 80 is discoid component.Antenna maintaining part 80 so that inductive type antenna 41 from processing chamber housing
1 top plate 11 mode prominent to processing SPACE V 1, each inductive type antenna 41 is kept relative to top plate 11.It is in addition, multiple
Antenna maintaining part 80 keeps multiple electricity in a manner of multiple inductive type antennas 41 form a line along predetermined imaginary axis K
Feel coupling type antenna 41, imaginary axis K extends along top plate 11.In addition, there is an inductive type antenna in processing chamber housing 1
In the case of 41, antenna also has one respectively with through hole 12 and antenna maintaining part 80.
Antenna maintaining part 80 is can be in the projected direction with the inductive type antenna 41 with inductive inductive
Change the corresponding electricity made in multiple inductive type antennas 41 in face in the face of intersection, more preferably vertical with the projected direction
The mode of the line segment L of the connection of both ends 42,43 of coupling type antenna 41 direction is felt, at the both ends of the inductive type antenna 41
Portion 42,43 keeps the component of the inductive type antenna 41.In more detail, multiple antenna maintaining parts 80 are with can be independently
The mode of change line segment L direction keeps multiple inductive type antennas.
By making antenna maintaining part 80 change the direction of inductive type antenna 41, can change by the inductive type day
The distribution of plasma ion density caused by line 41.Thereby, it is possible to improve the plasma ion density in processing SPACE V 1
Uniformity.Periphery on the corresponding antenna through hole 12 for being arranged on antenna maintaining part 80 in top plate 11
Mounting structure, be described below.
<Structural portion 5>
Structural portion 5 by with the transport path of substrate 9 it is opposite in a manner of be fixed on top plate 11.Structural portion 5 has mutually mutually
To a pair of side shields 51 and a pair of shield members 55 opposite each other.A pair of side shields 51 and a pair of shield members 55 divide
It is not grounded.
A pair of side shields 51 are individually the tabular extended in the direction for the transport path for crossing substrate 9 (X-direction)
Component, the respective both ends in X-axis are extended near the wall portion at the both ends in X-axis of processing chamber housing 1.A pair of side shields
The normal direction of the interarea of part 51 is the conveyance direction (Y-direction) of substrate 9, and a pair of side shields 51 are vertical with transport path
Plate body.On the respective top of a pair of side shields 51 formed with flange part.The normal direction of the interarea of each flange part is Z side
To each flange part is the plate body parallel with X/Y plane.
The height on the top of a pair of side shields 51 is set as, respectively than the top (U-shaped of inductive type antenna 41
Bottom) 44 high and mutual roughly equal height.A pair of side shields 51 are for example made of aluminum.
A pair of shield members 55 be by a manner of multiple inductive type antennas 41 of a row are arranged as opposite each other,
The component of the tabular set is erect from the top plate 11 of processing chamber housing 1.
A pair of shield members 55 each have：Flat base 56, being installed as can be along the lower surface 111 of top plate 11
Move in the X direction；Flat fixed plate 57, cardinal extremity are fixed on the ora terminalis of base 56, erect downwards and set from the ora terminalis
Put；Flat movable platen 58, it can be moved relative to fixed plate 57 in vertical.Base 56 is with can be along top plate 11
Lower surface 111 be arranged on and push up in mode of multiple inductive type antennas 41 with column direction, i.e. the direction movement of imaginary axis K
On plate 11.
The direction row formed with the orientation along multiple inductive type antennas 41, i.e. imaginary axis K on top plate 11
Multiple blind holes of row.Each blind hole inner peripheral surface formed with the internal thread screwed togather with bolt.In addition, on base 56 formed with
In the through hole for penetrating the bolt.Thus, base 56 is in the multiple of the orientation along multiple inductive type antennas 41
Position, it is fixed on top plate 11.
In addition, in fixed plate 57, formed with 2 elongated holes for penetrating fixed plate 57 and extending in vertical.In addition,
The interval being provided with movable platen 58 between 2 elongated holes and the 2 in-and-out bolt holes formed.In each insertion spiral shell
The inner peripheral surface of keyhole is formed with the internal thread that can be screwed with the bolt for the elongated hole for penetrating fixed plate 57.By using the spiral shell
Bolt, movable platen 58 are fixed in a manner of it can change along the position of vertical in fixed plate 57.
Plasma ion density in the three dimensions that inductive type antenna 41 protrudes makes the inductance of u-shaped shape
The central spot highest of the line segment of the both ends connection of arc-shaped part in coupling type antenna 41.Plasma ion density with
It is remote from all directions of the central point into three-D space and decay.Extended centered on inductive type antenna 41 etc.
Among gas ions density profile, in the case of inserting shield member 55, suppress the decay of the plasma ion density.More
Specifically, in the case where inserting shield member 55, plasma ion density and the situation phase for being not inserted into shield member 55
Than slowly declining, drastically decline near shield member 55.In the wall of shield member 55, plasma disappearance.Shielded by insertion
It is above and below paper in the case of covering exemplified by Fig. 8 that the descent direction of plasma ion density caused by component 55 is stated afterwards
Direction.
Therefore, when height of the shield member 55 away from lower surface 111 uprises, it is possible to increase near substrate 9 space etc.
Ion volume ion density.In addition, even if by making being connect with column direction along multiple inductive type antennas 41 of shield member 55
The antenna of the end of nearly multiple inductive type antennas 41, the plasma ion that can also improve space near substrate 9 are close
Degree.Along the position for changing shield member 55 with column direction of multiple inductive type antennas 41, compared to change shield member 55
The situation of height away from top plate 11, the amplitude of fluctuation of plasma ion density can be made to become big.So, structure is shielded by changing
One in the position and height of part 55, the distribution of plasma ion density can be adjusted.If in addition, without changing by connecing
Plasma ion density caused by the inductive type antenna 41 of a shield member 55 in nearly a pair of shield members 55
Distribution, then can substitute a shield member 55, and by the screen with the structure that can not change the position relative to top plate 11
Component is covered on top plate 11.In addition, even if a pair of shield members 55 are being not provided with, by the band of both ends inductive type antenna 41
The plasma ion density distribution come is distributed it with the plasma ion density brought by other inductive type antennas 41
Difference also in permissible range in the case of, without setting a pair of shield members 55.
So, the lower surface 111 of a pair of side shields 51, a pair of shield members 55 and top plate 11 handles SPACE V 1 to surround
Wall.
<Gas supply part 61>
A pair of gas supply parts 61 each have：The supply source 611 of unstrpped gas；Multiple (being illustrated as 4) nozzles 615,
Unstrpped gas is supplied to processing SPACE V 1；Pipe arrangement 612, connect supply source 611 and multiple nozzles 615；Valve 613, is arranged on
In the path way of pipe arrangement 612.Multiple nozzles 615 are correspondingly arranged with each multiple inductive type antennas 41 respectively.
Gas supply part 61 to processing the base feed gas of SPACE V 1.Specifically, it is used as raw material from the supply of each nozzle 615
Such as silane (the SiH of gas4) gas etc..Delivery gas and unstrpped gas can be used as by delivering the non-active gas of unstrpped gas
Supplied together from gas supply part 61.
Valve 613 is preferably capable of the valve of the flow for the gas that adjust automatically flows in pipe arrangement 612, in particular, it is preferred that bag
Include such as mass flow controller.
<Exhaust portion 7>
Exhaust portion 7 is high-vacuum exhaust system, specifically, such as with vavuum pump 71, exhaust pipe arrangement 72 and air bleeding valve
73.One end of exhaust pipe arrangement 72 is connected with vavuum pump 71, and the other end connects connection with processing SPACE V 1.In addition, air bleeding valve 73 is set
Put in the path way of exhaust pipe arrangement 72.Specifically, air bleeding valve 73 is for example including APC (automatic pressure controllers：Auto
Pressure controller) etc., and can be to the valve of the flow adjust automatically of the gas flowed in exhaust pipe arrangement 72.At this
In structure, when opening air bleeding valve 73 in the state of the action of vavuum pump 71, processing SPACE V 1 is exhausted.
<Control unit 8>
Control unit 8 electrically connects (schematic drawing in Fig. 1 with each structural elements possessed by plasma processing apparatus 100
Show), these each components are controlled.Specifically, control unit 8 is for example made up of common computer, in the computer,
Carry out the ROM of CPU, the storage program of various calculation process etc., the RAM of operating area as calculation process, storage program and
The hard disk of various data files etc., have mutually interconnected by bus etc. via LAN etc. data communication section of data communication function etc.
Connect.In addition, input unit formed such as control unit 8 and display, keyboard and mouse by carrying out various displays etc. is connected.Wait
In gas ions processing unit 100, under the control of control unit 8, defined processing is performed to substrate 9.
<Mounting structure of the antenna maintaining part 80 to top plate 11>
Fig. 4 is the outline knot for antenna maintaining part 80 and its periphery for schematically showing plasma processing apparatus 100
The top view of structure.Fig. 5 is the B-B sectional views of Fig. 4 antenna maintaining part 80.Fig. 6 is the C-C section views of Fig. 4 antenna maintaining part 80
Figure.
Each antenna maintaining part 80 is can to keep the tabular such as circular plate shape of corresponding inductive type antenna 41
Component.As described above, formed with each inductance for being inserted into each antenna maintaining part 80 and being kept on the top plate 11 of processing chamber housing 1
Multiple (being illustrated as 4) antenna through holes 12 of coupling type antenna 41.Each antenna through hole 12 has with can be by corresponding
Antenna maintaining part 80 close mode and 80 corresponding shape of antenna maintaining part.More say, the chi of antenna through hole 12
The very little size less than antenna maintaining part 80.In addition, if antenna maintaining part 80 is circular (discoideus), then preferred antenna penetrates
The shape in hole 12 is also circle.If in the state of 80 completely plugged antenna of antenna maintaining part is with through hole 12, antenna is kept
Antenna in the peripheral part and top plate 11 in portion 80 with the periphery of through hole 12 there is the width that can be interfixed to overlap, then
Antenna maintaining part 80 and the shape of antenna through hole 12 can also be different.Specifically, antenna maintaining part 80 and antenna are with passing through
The shape of one in through hole 12 for example can be octagon, and another shape is, for example, to justify.
The periphery of antenna through hole 12 in the peripheral part of antenna maintaining part 80 and top plate 11, is respectively arranged with peace
Assembling structure 830,130, when antenna maintaining part 80 is respectively at multiple anglecs of rotation along antenna with the circumference of through hole 12, peace
Assembling structure 830,130 is in a manner of antenna maintaining part 80 is blocked antenna through hole 12 by the peripheral part of antenna maintaining part 80
Enough handling ground is arranged on periphery of the antenna with through hole 12.Make keeping the antenna maintaining part 80 of inductive type antenna 41
Inductive type antenna 41 is prominent into processing chamber housing 1 and closes in the state of antenna through hole 12, antenna maintaining part 80
Peripheral part and antenna are mutually installed together with the periphery of through hole 12.
Specifically, the mounting structure 830 set in the peripheral part of antenna maintaining part 80 is multiple (in example illustrated
In, be 12 every the setting of 30 ° of the anglec of rotation) bolt through hole 83, multiple bolt through holes 83 be formed at so that
Centered on the midpoint C for the line segment L that the both ends 42,43 of the inductive type antenna 41 that antenna maintaining part 80 is kept connect and
On concentric circles U1 on peripheral part.Each bolt through hole 83 is formed to insert the size of bolt 99.In addition, in top plate 11
In upper surface 112 of the antenna with the periphery of through hole 12 on, in antenna between through hole 12 and blind hole 13, formed with enclosing
Around groove portion 14 of the antenna around through hole 12.The O-ring 15 of rubber system is embedded in groove portion 14.Thereby, it is possible to improve antenna
Seal of the maintaining part 80 to processing SPACE V 1.
It is multiple (in the example in the figures, Mei Gexuan in the mounting structure 130 that the periphery of antenna through hole 12 is set
6 of 60 ° of settings of gyration) blind hole 13, the plurality of blind hole 13 is formed at opposite with antenna maintaining part 80 in the periphery
Forward surface on and with the concentric circles U2 of concentric circles U1 same diameters, the plurality of blind hole 13 is in the forward surface upper shed.
On the inner peripheral surface of each blind hole 13, formed with the internal thread that can be screwed togather with the bolt 99 of in-and-out bolt through hole 83.
In this case, the anglec of rotation of antenna maintaining part 80 can be changed by 30 °.That is, antenna can be protected
The direction for the inductive type antenna 41 that portion 80 is kept is held by 12 settings.In addition, antenna maintaining part 80 and antenna insertion
The periphery in hole 12 is fixed by 6 bolts 99.In addition, it is provided for even in each bolt with the inner peripheral surface of through hole 83 and bolt
99 internal threads screwed togather, the serviceability of the present invention is not damaged yet.
Multiple bolts are with through hole 83 to be formed at equal intervals on concentric circles U1.In addition, multiple blind holes 13 are with shape at equal intervals
Into on concentric circles U2.As described above, in the example in the figures, the number of bolt through hole 83 is 12, of blind hole 13
Number is 6.That is, bolt is with the multiple of the number that the number of through hole 83 is blind hole 13.On the contrary, the number of blind hole 13 can also be
The multiple of the bolt number of through hole 83.In addition, the bolt number of through hole 83 and the number of antenna through hole 12
Can be with identical.
Bolt is preferably selected from 4,6,8,12 and 24 respectively with the number of through hole 83 and the number of blind hole 13
Arbitrary number.Thereby, it is possible to realize the raising of the seal in processing chamber housing 1 simultaneously and for setting bolt through hole
83rd, the reduction of the cost of blind hole 13.
In addition, bolt is lower than the manufacturing cost of blind hole 13 with the manufacturing cost of through hole 83, it is therefore preferable that bolt penetrates
The number in hole 83 is more than the number 13 of blind hole.
Fig. 7 is the stereogram for the schematic configuration for schematically showing the bottom plate 120 with multiple antenna maintaining parts 80.Work as place
Manage chamber 1 maximize when, the weight of processing chamber housing 1 reaches such as several tons, therefore, as shown in Figure 7, preferably use formed with
With the bottom plate 120 of the number identical antenna through hole 12 of antenna maintaining part 80.Bottom plate 120 is a part for top plate 11.By
This, multiple antenna maintaining parts 80 are unloaded together with bottom plate 120 from processing chamber housing 1, adjust the court of each inductive type antenna 41
Backward, bottom plate 120 is made to return to processing chamber housing 1, thus, the angle change operation of antenna maintaining part 80 becomes easier to.Bottom plate
120 and the installations of the other parts in top plate 11 pass through with being carried out to antenna maintaining part 80 and antenna with the periphery of through hole 12
Fixed 830,130 same mounting structure of mounting structure is carried out.
Fig. 8 is to represent to utilize plasma ion density caused by 1 inductive type antenna 41 in the form of contour map
The figure of the measure example of distribution.Fig. 9 is to represent survey of the plasma ion density distribution relative to the variation of pressure with curve form
The figure of usual practice.Figure 10 is to represent to utilize plasma ion density point caused by 2 inductive type antennas 41 with curve form
The figure of the measure example of cloth.Figure 11 is that 1 electricity using barricade is not provided with around is schematically represented in the form of contour map
Feel the figure of plasma ion density distribution caused by coupling type antenna 41.
Fig. 8 is shown in the 1 inductive type antenna 41 of setting of processing chamber housing 1, and using Langmuir probe method to handling
The result that plasma ion density at each grid point of horizontal plane setting in SPACE V 1 is measured.Plasma ion
Density passes through ion saturation current density (μ A/cm2) measure obtain.Ion saturation current density is comparable to plasma
The value of ion concentration.Plasma ion density be distributed in X-direction, Y-direction is respectively Gaussian Profile.In the example of fig. 8,
The distribution of plasma ion density in measurement region is shown by contour to represent.Specifically, plasma ion
Density (μ A/cm2) distribution be respectively 0-0.12,0.12-0.18,0.18-0.24,0.24-0.3,0.3-0.36,0.36-
0.42nd, this 9 grades of 0.42-0.48,0.48-0.54,0.54-0.6, enter in a manner of this puts in order and uprised gradually by concentration
Row shading display.
It can be seen from Fig. 8 measurement result, by the curve bag for making plasma ion density identical each point be formed by connecting
The region enclosed, compared to Y-direction (direction vertical with the both ends for making inductive type antenna 41 line segment being connected), more to X side
To (direction for making the line segment that the both ends of inductive type antenna 41 connect) extension.Understand, from the center in region along X side
To away from compare from the center in region along the Y direction away from, the decay of plasma ion density is smooth.The difference is due to profit
Suppress extension of the plasma to Y-direction with a pair of side shields 51 opposite along the Y direction.In the measure example, it is not provided with
A pair of shield members 55 opposite each other along the X direction.
In contrast, all it is not provided with the situation of a pair of shield members 55 and a pair of side shields 51 in X-direction, Y-direction
Under, as shown in figure 11, the area that the curve being formed by connecting by each point for the plasma ion density for making to have same intensity surrounds
Domain, maximum length WY in the Y direction is more than the maximum length in X-direction.That is, with Fig. 8 on the contrary, X-direction is more to Y compared with the region
Directional Extension.
So, it is distributed using plasma ion density caused by inductive type antenna 41 not by inductive type day
In the case of the influence of wall around line 41, the line for connecting the both ends 42,43 of inductive type antenna 41 is being included
In section L central point C and the vertical plane vertical with the projected direction of inductive type antenna 41, from central point C along line
Section L bearing of trend (X-direction) is away from the case of, plasma ion density most sharp-decay.On the contrary, from central point C
Along the direction (Y-direction) vertical with line segment L bearing of trend away from the case of, plasma ion density most slowly declines
Subtract.
Therefore, by the distribution of the plasma ion density based on measured in advance, such as trial and error method (cut and are utilized
Try the direction of inductive type antenna 41) is adjusted, so as to improve the uniformity of plasma ion density.
In addition, Fig. 9 is that the process conditions in addition to cavity indoor pressure are set in the same manner as Fig. 8, and make cavity indoor pressure
Change to determine result of half amplitude of plasma density distribution relative to the variation of pressure.Even in the situation of pressure change
Under, it will also realize that, same with Fig. 8, Y-direction is compared in the region with the plasma ion density of same intensity, is more expanded to X-direction
Exhibition.
Figure 10 represents that the plasma ion when 2 inductive type antennas 41 are lit and (are supplied to RF power) is close
Spend the measurement result of distribution.To each inductive type antenna 41 individually supply electric power and result individually determined utilizes white circle
Describe with black circle.The curve described with the rhombus of white is by the simple phase of each 41 single measurement result of inductive type antenna
Obtained from adding.The curve described with the rhombus of black is actual to represent that supply electric power is simultaneously simultaneously to 2 inductive type antennas 41
The density of measure.
So, in the case of using multiple inductive type antennas 41, the reaction process in chamber is by the pressure in chamber
The influence of the distance between wall in power, the flow of process gas, component, each antenna and chamber etc., therefore, plasma from
The distribution of sub- density will not be the simple additive value of the density of each monomer of inductive type antenna 41, plasma ion density
Uniformity be compromised sometimes.
But in plasma processing apparatus 100, inductive type antenna is changed by using antenna maintaining part 80
41 direction, cost can be suppressed and improve the uniformity of plasma ion density.
Figure 12 is the plasma for the other structures example for schematically showing the plasma processing apparatus as embodiment
The YZ side views of body processing unit 100A schematic configuration.Plasma processing apparatus 100A and plasma processing apparatus 100
Difference be that plasma processing apparatus 100 sets antenna maintaining part 80 respectively for 4 inductive type antennas 41, come
The direction of each inductive type antenna 41 is adjusted, in contrast, 2 inductance of the plasma processing apparatus 100A only for both ends
Coupling type antenna 41 sets antenna maintaining part 80.For example, in the case where multiple inductive type antennas 41 are arranged as a row,
Plasma ion density damages overall plasma ion density only caused by the inductive type antenna 41 at reason both ends
In the case of uniformity, as shown in figure 12, it can be set only for as the inductive type antenna 41 the reason for infringement uniformity
Put antenna maintaining part 80.In this case, 2 inductive type days at the both ends of antenna maintaining part 80 corresponding to being respectively arranged with
Line 41 is equivalent to " at least one inductive type antenna " in the present invention.
<2. the action of plasma processing apparatus>
Then, the flow of the processing to being performed in plasma processing apparatus 100 illustrates.Processing described below
Performed under the control of control unit 8.
When the carrying-in/carrying-out mouth via processing chamber housing 1 moves into the bearing 90 for being configured with substrate 9 to the inside of processing chamber housing 1
When, keep conveying unit 2 to keep the bearing 90.In addition, exhaust portion 7 gas in processing chamber housing 1 is exhausted to make processing chamber
Room 1 is in vacuum state.In addition, on defined opportunity, conveying unit 2 is kept to start the conveyance (conveyance step) of bearing 90, heating
Portion 3 starts to heat the substrate 9 configured on bearing 90.
When the inside of processing chamber housing 1 is in vacuum state, gas supply part 61 starts from nozzle 615 to processing SPACE V 1
Base feed gas.
In addition, while with being initially supplied gas, high-frequency electrical is flowed through from high frequency electric source 440 to each inductive type antenna 41
Stream (specifically, such as 13.56MHz high frequency electric).Then, the high-frequency induction around inductive type antenna 41 is utilized
Magnetic field accelerates to electronics, produces inductively coupled plasma.When producing plasma, the unstripped gas in SPACE V 1 is handled
Body is in plasma, and is produced free radical (Radical) and ion of unstrpped gas etc. and is enlivened kind, and in the substrate transported
Chemical vapor-phase growing is carried out on 9.So, the substrate 9 formed with cvd film can be as the knot of electronic device on interarea
Structure body and be used for the various electronic devices such as solar cell.
In the film process of plasma processing apparatus 100, the conveyance processing and the generation of plasma of substrate 9 are handled
It is parallel to carry out.In addition, conveyance processing and plasma of the supply processing of unstrpped gas with substrate 9 produce and handle and advance
OK.
In the above-described embodiment, to the plasma processing apparatus of the present invention is applied into plasma CVD equipment
Situation be illustrated, but the present invention plasma processing apparatus can be applied to carry out corona treatment various dresses
Put.Such as go for being sputtered to form splashing for film on object using the ion pair target in plasma environment
Injection device.Alternatively, it is also possible to suitable for making etching gas is plasmarized it is acted on object to be lost to object
The plasma-etching apparatus at quarter.
According to more than form present embodiment plasma processing apparatus, antenna maintaining part 80 with can with the electricity
The both ends 42,43 for changing inductive type antenna 41 corresponding to making in the face that the projected direction of sense coupling type antenna 41 intersects connect
The mode of the line segment L connect direction, the inductive type antenna is kept at the both ends 42,43 of the inductive type antenna 41
41.But just by the number of turn be less than 1 circle inductive type antenna 41 carry out the plasma of plasmarized process gas from
For sub- density, in comprising the face for making line segment L that the both ends 42,43 of inductive type antenna 41 connect, with line segment L
Density on vertical direction is higher than the density on line segment L directions.Therefore, inductance is changed by using antenna maintaining part 80
The direction of coupling type antenna 41, it is possible to increase the uniformity of plasma ion density.
In addition, the plasma processing apparatus of the present embodiment formed more than, due to can separately become
More make the line segment L of the respective connection of both ends 42,43 of multiple inductive type antennas 41 direction, so can carry in a wide range
The uniformity of high plasma ion density.
In addition, the plasma processing apparatus of the present embodiment formed more than, multiple inductive type antennas 41
A row are arranged in along imaginary axis K, so the uniformity of plasma ion density can be improved in the wide scope of width, it is false
Think that top plates 11 of the axle K along processing chamber housing 1 extends.
In addition, the plasma processing apparatus of the present embodiment formed more than, a pair of shield members 55 of tabular
Erect in a manner of across the multiple inductive type antennas 41 for being arranged in a row and opposite each other from the top plate 11 of processing chamber housing 1
Set.Therefore, the plasma ion density as caused by the inductive type antenna 41 at both ends is improved using shield member 55,
The decline of the plasma ion density can be suppressed.
In addition, the plasma processing apparatus of the present embodiment formed more than, in a pair of shield members 55 extremely
Few one is configured to change the position on the imaginary axis K directions of orientation for providing multiple inductive type antennas 41
With it is at least one in the height of the top plate 11 away from chamber 1., can by making shield member 55 close to inductive type antenna 41
Improve plasma ion density.In addition, even if improving the height of shield member 55, plasma ion density can be also improved.
Therefore, it is possible to more subtly adjust the plasma ion density as caused by the inductive type antenna 41 at both ends, further suppression
The decline of plasma ion density processed.
In addition, the plasma processing apparatus of the present embodiment formed more than, on the top plate 11 of processing chamber housing 1
Antenna through hole 12 is provided with, antenna through hole 12 has and the 80 corresponding shape of antenna maintaining part as tabular component
Shape, and closed by the antenna maintaining part 80.Also, the antenna insertion in the peripheral part of antenna maintaining part 80 and the top plate 11
The periphery in hole 12, mounting structure 830,130 is respectively arranged with, the circumference in antenna maintaining part 80 along antenna with through hole 12
When being respectively at multiple anglecs of rotation, mounting structure 830,130 is so that antenna maintaining part 80 blocks the side of antenna through hole 12
The peripheral part of antenna maintaining part 80 is detachably arranged on the periphery of antenna through hole 12 by formula.Therefore, change is passed through
The anglec of rotation of antenna maintaining part 80, it can easily change the direction of the inductive type antenna 41 kept by antenna maintaining part 80
(direction for making the line segment L of the connection of both ends 42,43).
In addition, the plasma processing apparatus of the present embodiment formed more than, by penetrating in-and-out bolt
The bolt 99 in hole 83 and the internal screw-thread screw formed in the inner peripheral surface of blind hole 13, can be by the peripheral part and day of antenna maintaining part 80
Line is firmly fixed with the periphery of through hole 12, improves the seal in processing chamber housing 1.
In addition, the plasma processing apparatus of the present embodiment formed more than, multiple bolts are with the He of through hole 83
The number of a side in multiple blind holes 13 is the multiple of the number of the opposing party.Therefore, it is possible to make multiple Hes of bolt through hole 83
The number of the part of a side in multiple blind holes 13 and the anglec of rotation of the antenna maintaining part 80 being all aligned of the opposing party is more
Number in bolt with the few side in the number of through hole 83 and the number of blind hole 13.Thus, even if cutting down bolt with passing through
The number of a side in through hole 83 and blind hole 13, also inductive type antenna 41 (can be made the two of inductive type antenna 41
The line segment L that end 42,43 connects) it is set as multiple directions.
In addition, the plasma processing apparatus of the present embodiment formed more than, multiple bolts through hole 83
The number of number and multiple blind holes 13 is the arbitrary number selected from 4,6,8,12 and 24 respectively.If use bolt
The increase of the number of through hole 83 and blind hole 13, then antenna maintaining part 80 is more firmly scheduled on antenna using more bolts 99 and penetrated
The periphery in hole 12, therefore the seal in processing chamber housing 1 is improved, and on the other hand, make bolt through hole 83 and blind hole 13
Manufacturing cost increase.Therefore, if determining bolt 13 respective number of through hole 83 and blind hole as the present invention, together
The raising of airtight performance in Shi Shixian processing chamber housings 1 and the decline of cost.
In addition, the plasma processing apparatus of the present embodiment formed more than, due to being manufactured compared with blind hole 13
The low bolt of cost is more than the number of blind hole 13 with the number of through hole 83, therefore can reduce the system of plasma processing apparatus
Cause this.
<Variation>
The present invention be shown specifically and describe, but the description above is only illustration rather than limit in the mode of whole
It is fixed.Therefore, the present invention can carry out appropriate deformation and omission in the range of its invention to embodiment.
Claims (10)
- A kind of 1. plasma processing apparatus, it is characterised in thatHave：Chamber,Object maintaining part, the object of process object is maintained as in the chamber,At least one inductive type antenna, the number of turn are less than a circle,High frequency electric source, at least one inductive type antenna supply high frequency electric power,At least one antenna maintaining part, so that at least one inductive type antenna is from a wall portion of the chamber to described Prominent mode in chamber, respectively by the corresponding inductive type antenna at least one inductive type antenna in institute The both ends of inductive type antenna are kept corresponding to stating, and are detachably arranged in a wall portion；Each antenna maintaining part of at least one antenna maintaining part, respectively so that at least one inductance coupling can will be made Corresponding inductive type antenna in mould assembly antenna both ends connection line segment direction with the inductive type antenna Projected direction intersect face in by multiple anglecs of rotation change in a manner of, detachably in a wall portion.
- 2. plasma processing apparatus as claimed in claim 1, it is characterised in thatAt least one inductive type antenna is multiple inductive type antennas, and at least one antenna maintaining part For multiple antenna maintaining parts,The multiple antenna maintaining part makes the multiple respective both ends of inductive type antenna to be able to independent change The mode of the direction of the line segment of connection keeps the multiple inductive type antenna and is detachably arranged on a wall portion On.
- 3. plasma processing apparatus as claimed in claim 2, it is characterised in thatThe multiple antenna maintaining part is so that the multiple inductive type antenna is arranged in a row along predetermined imaginary axis Mode keep the multiple inductive type antenna and detachably be arranged on a wall portion on, the imaginary axis be along The imaginary axis of the one wall portion extension.
- 4. plasma processing apparatus as claimed in claim 3, it is characterised in thatThe plasma processing apparatus also has a pair of shield members of tabular, and the pair of shield member is with across being arranged in one The mode of the multiple inductive type antenna of row opposite each other, erect and set from a wall portion for the chamber.
- 5. plasma processing apparatus as claimed in claim 4, it is characterised in thatAt least one shield member in the pair of shield member is arranged to, can change position on the imaginary axis and It is at least one in the height of a wall portion away from the chamber.
- 6. the plasma processing apparatus as any one of claim 1 to 5, it is characterised in thatAt least one day wire retaining portions are not that can keep corresponding at least one inductive type antenna The tabular component of inductive type antenna,The mutually corresponding inductance in using at least one inductive type antenna and at least one antenna maintaining part When coupling type antenna and antenna maintaining part are to define respective antenna and corresponding maintaining part,A wall portion for the chamber is provided with antenna through hole, and the antenna is inserted into by the corresponding guarantor with through hole Hold the respective antenna of portion's holding, and with a manner of it can be closed by the corresponding maintaining part with the corresponding maintaining part Corresponding shape,The antenna in the peripheral part and a wall portion of the corresponding maintaining part is set respectively with the periphery of through hole There are the first mounting structure and the second mounting structure, in circumference difference of the corresponding maintaining part along the antenna through hole During in multiple anglecs of rotation, first mounting structure and second mounting structure are so that the corresponding maintaining part blocks The peripheral part of the corresponding maintaining part is detachably arranged on the antenna and penetrated by the mode of the antenna through hole On the periphery in hole,The corresponding maintaining part for keeping the respective antenna make the respective antenna into the chamber it is prominent and close institute In the state of stating antenna through hole, the peripheral part is pacified using first mounting structure and second mounting structure On the periphery.
- 7. plasma processing apparatus as claimed in claim 6, it is characterised in thatIt is multiple bolt through holes in first mounting structure that the peripheral part of the corresponding maintaining part is set, it is described Multiple bolts are formed on the first concentric circles on the peripheral part with through hole and are inserted into bolt,It is multiple blind holes in second mounting structure that the antenna is set with the periphery of through hole, it is the multiple blind Hole is formed on the forward surface opposite with the antenna maintaining part in the periphery and has the first concentric circles phase With on the second concentric circles of diameter, the multiple blind hole is in the forward surface opening, and formed with can be with inner peripheral surface Penetrate the internal thread that the bolt is screwed togather with the bolt of through hole.
- 8. plasma processing apparatus as claimed in claim 7, it is characterised in thatThe multiple bolt with through hole to form on first concentric circles at equal intervals, and the multiple blind hole is between grade Every formation on second concentric circles,The multiple bolt is the multiple of the number of the opposing party with the number of the side in through hole and the multiple blind hole.
- 9. plasma processing apparatus as claimed in claim 8, it is characterised in thatThe multiple bolt with the number of through hole and the number of the multiple blind hole is selected from 4,6,8,12 and 24 respectively The arbitrary number selected.
- 10. plasma processing apparatus as claimed in claim 7, it is characterised in thatThe number of the multiple bolt through hole is more than the number of the multiple blind hole.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-199708 | 2014-09-30 | ||
| JP2014199708A JP6373707B2 (en) | 2014-09-30 | 2014-09-30 | Plasma processing equipment |
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| CN105472857A CN105472857A (en) | 2016-04-06 |
| CN105472857B true CN105472857B (en) | 2018-04-10 |
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| CN201510632845.7A Active CN105472857B (en) | 2014-09-30 | 2015-09-29 | Plasma processing apparatus |
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| JP (1) | JP6373707B2 (en) |
| KR (1) | KR101699177B1 (en) |
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| JP6999368B2 (en) * | 2017-11-01 | 2022-01-18 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN113889391B (en) * | 2020-07-02 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and insulating window assembly thereof |
| TWI786417B (en) * | 2020-07-14 | 2022-12-11 | 大氣電漿股份有限公司 | Atmospheric pressure plasma generator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101855947A (en) * | 2007-11-14 | 2010-10-06 | Emd株式会社 | Plasma treatment device |
| CN105018899A (en) * | 2013-10-07 | 2015-11-04 | 斯克林集团公司 | Plasma CVD apparatus |
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| WO2011061787A1 (en) * | 2009-11-17 | 2011-05-26 | 日新電機株式会社 | Plasma device |
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| TWI559819B (en) * | 2010-09-10 | 2016-11-21 | Emd Corp | Plasma processing device |
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| US9653253B2 (en) * | 2014-03-07 | 2017-05-16 | Advanced Ion Beam Technology, Inc. | Plasma-based material modification using a plasma source with magnetic confinement |
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| CN101855947A (en) * | 2007-11-14 | 2010-10-06 | Emd株式会社 | Plasma treatment device |
| CN105018899A (en) * | 2013-10-07 | 2015-11-04 | 斯克林集团公司 | Plasma CVD apparatus |
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|---|---|
| JP6373707B2 (en) | 2018-08-15 |
| CN105472857A (en) | 2016-04-06 |
| JP2016072065A (en) | 2016-05-09 |
| TW201614759A (en) | 2016-04-16 |
| KR101699177B1 (en) | 2017-01-23 |
| KR20160038787A (en) | 2016-04-07 |
| TWI581354B (en) | 2017-05-01 |
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