CN105018899A - Plasma CVD apparatus - Google Patents
Plasma CVD apparatus Download PDFInfo
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- CN105018899A CN105018899A CN201410503445.1A CN201410503445A CN105018899A CN 105018899 A CN105018899 A CN 105018899A CN 201410503445 A CN201410503445 A CN 201410503445A CN 105018899 A CN105018899 A CN 105018899A
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- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims abstract description 59
- 230000008878 coupling Effects 0.000 claims abstract description 148
- 238000010168 coupling process Methods 0.000 claims abstract description 148
- 238000005859 coupling reaction Methods 0.000 claims abstract description 148
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000004804 winding Methods 0.000 claims abstract description 17
- 241001584775 Tunga penetrans Species 0.000 claims description 141
- 238000000034 method Methods 0.000 claims description 79
- 230000008569 process Effects 0.000 claims description 77
- 238000005192 partition Methods 0.000 claims description 23
- 230000033228 biological regulation Effects 0.000 claims description 12
- 238000011144 upstream manufacturing Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 41
- 238000012545 processing Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 11
- 238000011282 treatment Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000008676 import Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Abstract
The present invention improves the production capacity of an inductive coupling type plasma CVD apparatus. The plasma CVD apparatus includes: a chamber; a holding and moving part which holds a target substrate inside the chamber and moves it along a transfer path; at least one inductive coupling type antenna, whose winding number is less than a round, being set in opposition to the transfer path inside the chamber; a high-frequency electric power supply part supplying high-frequency power to the at least one inductive coupling type antenna; and a gas inlet part which introduces specified gas into the inside of the chamber. Furthermore, under the status of the gas inlet part introducing the specified gas into the inside of the chamber, the plasma CVD apparatus supplies high-frequency power from the high-frequency electric power supply part to the at least one inductive coupling type antenna and thereby makes plasma be generated, and the substrate is moved along the transfer path by the holding and moving part.
Description
Technical field
The present invention relates to and wanting the film forming plasma activated chemical vapour deposition of the object of coherent film (CVD) device by plasma activated chemical vapour deposition (plasma-enhanced chemical vapordeposition).
Background technology
As this plasma processing apparatus, Patent Document 1 discloses the device of following jigger coupling mode: with not around mode stop, and to the antenna supply high frequency electric power be made up of the wire of length of 1/4 wavelength or the conductor of tabular that are shorter than high frequency, produce high-frequency electric field, and produce plasma body by this electric field, thus carry out the surface treatments such as film formation at real estate.This device is that four limits of the vacuum vessel of rectangle arrange multiple antenna respectively in planeform, and by with parallel way to the multiple antenna supply high frequency electric power being arranged at four limits, process large-area substrate.
Prior art document
Patent documentation 1: Japanese Patent No. 3751909 publication
But, with regard to the plasma processing apparatus of patent documentation 1, the substrate of handling object being sent into the technique in vacuum vessel and sending from vacuum vessel the technique of treated substrate, because substrate is not processed, thus there is the problem that productivity is declined.
Summary of the invention
The present invention is used for addressing this is that, and its object is to, and provides the technology of the productivity that can improve plasma CVD device.
In order to solve the problem, the plasma CVD device of first scheme comprises: chamber, keep trucking department, in above-mentioned chamber, keep the substrate as handling object, and relatively carry along transport path, at least one jigger coupling type antenna, to be arranged in above-mentioned chamber with above-mentioned transport path mode in opposite directions, and winding number is less than a circle, High frequency power supply unit, at least one jigger coupling type antenna supply high frequency electric power above-mentioned, and gas introduction part, for importing the gas of regulation in above-mentioned chamber; Importing the gas of afore mentioned rules in above-mentioned chamber from above-mentioned gas introduction part, and from above-mentioned High frequency power supply unit to the state that at least one jigger coupling type antenna supply high frequency electric power above-mentioned produces plasma body, carry aforesaid substrate by above-mentioned maintenance trucking department along above-mentioned transport path.
The plasma CVD device of alternative plan is according to the plasma CVD device of first scheme, have: with above-mentioned transport path in opposite directions, and be arranged in above-mentioned chamber along the direction of above-mentioned transport path, and winding number is less than at least one jigger coupling type antenna of a circle; Arrange partition member respectively at the upstream side of the transport path relative at least one jigger coupling type antenna above-mentioned and downstream side, it is the space of the upstream side of above-mentioned transport path and the space in downstream side that above-mentioned partition member is used for the process separated by spaces in above-mentioned chamber.
The plasma CVD device of third program is according to the plasma CVD device of first scheme, have: with above-mentioned transport path in opposite directions, and the imaginary axis of the regulation of intersecting along the direction with above-mentioned transport path is arranged in row in above-mentioned chamber, and winding number is less than multiple jigger coupling type antennas of a circle; Make the respective both ends of the above-mentioned multiple jigger coupling type antenna of connection and the central point of the line segment obtained is configured in above-mentioned imaginary axis, make above-mentioned multiple jigger coupling type antenna be arranged in row along above-mentioned imaginary axis.
The plasma CVD device of fourth program is according to the plasma CVD device of third program, and the multiple jigger coupling type antenna both ends separately arranged along above-mentioned imaginary axis are configured in above-mentioned imaginary axis.
The plasma CVD device of the 5th scheme is according to the plasma CVD device of either a program in first scheme to fourth program, also comprise at least one magnetic field generation section, at least one magnetic field generation section above-mentioned is used for the generation magnetic field, process space in above-mentioned chamber.
The plasma CVD device of the 6th scheme is according to the plasma CVD device of the 5th scheme, have: with above-mentioned transport path in opposite directions, and the imaginary axis of the regulation of intersecting along the direction with above-mentioned transport path is arranged in row in above-mentioned chamber, and winding number is less than at least one jigger coupling type antenna of a circle; Have magnetic field generation section, above-mentioned magnetic field generation section is used for the generation magnetic field, space at least partially in the process space in above-mentioned chamber; Above-mentioned space at least partially comprises particular space: this particular space refers to, relative to not adjacent with another jigger coupling type antenna end in the both ends of at least one jigger coupling type antenna above-mentioned, is positioned at the space of the side contrary with the other end.
The plasma CVD device of the 7th scheme is according to the plasma CVD device of the 5th scheme, have: to be arranged in above-mentioned chamber with above-mentioned transport path mode in opposite directions, and winding number is less than at least one jigger coupling type antenna of a circle; Have magnetic field generation section, above-mentioned magnetic field generation section is used for the generation magnetic field, space at least partially in the process space in above-mentioned chamber; Above-mentioned space at least partially comprises the space between the two end portions of at least one jigger coupling type antenna above-mentioned.
The plasma CVD device of the 8th scheme is according to the plasma CVD device of the 5th scheme, have: with above-mentioned transport path in opposite directions, and the imaginary axis of the regulation of intersecting along the direction with above-mentioned transport path is arranged in row in above-mentioned chamber, and winding number is less than multiple jigger coupling type antennas of a circle; Have magnetic field generation section, above-mentioned magnetic field generation section is used for the generation magnetic field, space at least partially in the process space in above-mentioned chamber; Above-mentioned space at least partially comprises the space between the adjacent jigger coupling type antenna in above-mentioned multiple jigger coupling type antenna.
The plasma CVD device of the 9th scheme is according to the plasma CVD device of the 5th scheme, and at least one magnetic field generation section above-mentioned is electro-magnet; Also comprise: electric current supply portion, with the coil supply electric current of the mode that can change at least one magnetic field generation section above-mentioned, and control part, for controlling the electric current of above-mentioned electric current supply portion supply.
According to the present invention, can to be arranged in chamber and winding number is less than the jigger coupling type antenna supply high frequency electric power of a circle, come to produce the low plasma body of plasma potential, thus with high speed carrying substrate, while utilize plasma body to process with high-density.Therefore, such as, if without the need to the both ends in the transport path along chamber, can the load lock chamber of vacuum exhaust be connected with unload lock chambers via goalkeeper, air in chamber is discharged, also can send into and send substrate, then can carry out the feeding comprising substrate, a series of process utilizing the process of plasma body and send for multiple substrate in mode that is continuous and high speed.Thereby, it is possible to improve the productivity of plasma CVD device.
Accompanying drawing explanation
Fig. 1 is the figure of the brief configuration of the plasma CVD device schematically showing embodiment.
Fig. 2 is the figure of an example of configuration for illustration of the jigger coupling type antenna arranged along imaginary axis and magnetic field generation section.
Fig. 3 is the figure of the brief configuration of the magnetic field generation section schematically showing Fig. 2.
Fig. 4 is the figure of the Controlling System of the electric current supplied for illustration of the magnetic field generation section to Fig. 2.
Fig. 5 is the figure of the relation of intensity distribution for illustration of magnetic field and plasma body.
Fig. 6 is the figure of other examples of configuration for illustration of the jigger coupling type antenna arranged along imaginary axis and magnetic field generation section.
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are described.In the drawings, for having identical structure and the part of function, mark identical Reference numeral, and in the following description, omit repeat specification.Further, each figure is what schematically show, and for the ease of understanding, the size in each portion or number can be exaggerated to some extent or be simplified and illustrate.Further, in a part of figure, in order to direction, suitably XYZ rectangular axes are added.The direction of the Z axis in this coordinate axis represents the direction of vertical line, and XY plane is horizontal plane.Further, X-axis and Y-axis are respectively the axle parallel with the sidewall for the treatment of chamber 1.
The one-piece construction > of < 1. plasma CVD device 100
Fig. 1 is the figure of the brief configuration of the plasma CVD device 100 schematically showing embodiment.Plasma CVD device 100 is wanting the object of coherent film (, being such as substrate 9 here) film forming device by plasma activated chemical vapour deposition (plasma-enhanced chemical vapor deposition).
Plasma CVD device 100 comprises: treatment chamber 1, in inner formation processing SPACE V; Keep trucking department 2, keep and carrying substrate 9 (be specially, be arranged at the substrate 9 of conveyance 90); Heating part 3, for heated substrates 9; Plasma generation portion 4, for producing plasma body in process SPACE V; And partition member 5.Further, plasma CVD device 100 comprises: High frequency power supply unit 45, for plasma generation portion 4 supply high frequency electric power; And magnetic field generation section 31, for producing magnetic field in process SPACE V.In addition, even if plasma CVD device 100 does not have magnetic field generation section 31, also and do not mean that impairment availability of the present invention.
Further, plasma CVD device 100 comprises: gas introduction part 61, for importing the gas of regulation to the process SPACE V in chamber 1; Gas supply part 6, for gas introduction part 61 supply gas; And exhaust portion 7, the gas of process SPACE V is discharged from process SPACE V.Further, plasma CVD device 100 has the control part 8 for controlling each textural element as above.
< treatment chamber 1 >
Treatment chamber 1 is the hollow part of the profile in rectangular shape, in the inside formation processing SPACE V of above-mentioned treatment chamber 1.The top board 11 for the treatment of chamber 1 configures in the mode making its lower surface 111 and be in flat-hand position, from above-mentioned lower surface 111 towards process SPACE V, and projecting jigger coupling type antenna 41 and partition member 5.Further, heating part 3 is configured with at the base plate vicinity for the treatment of chamber 1.Further, in the upside of heating part 3, the transport path Y1 based on the substrate 9 keeping trucking department 2 is specified.The bearing of trend of transport path Y1 is Y direction, and the carrying direction of the substrate 9 of transport path Y1 is+Y-direction.The end of the carrying direction upstream side in the both ends of the chamber 1 along transport path Y1 is provided with sends into mouth 121, above-mentioned feeding mouth 121 is for sending in chamber 1 by substrate 9, be provided with in the end in carrying downstream side, direction and send mouth 122, above-mentioned mouth 122 of sending for sending substrate 9 outside chamber 1.Be provided with door (" feeding door ") 123 at the feeding mouth 121 of upstream side, be provided with door (" sending door ") 124 at the mouth 122 of sending in downstream side.Door 123,124 can switch between opened and closed conditions.Further, send into mouth 121, send mouth 122 structure and can connect to keep airtight form as the opening portion of other chambers such as load lock chamber or unload lock chambers.
< keeps trucking department 2 >
Here, as the state wanting the substrate 9 of the object of coherent film to be in be arranged at the upper surface of the conveyance 90 of tabular.Trucking department 2 is kept the feeding mouth 121 via treatment chamber 1 to be imported the conveyance 90 of process SPACE V (namely, be provided with the conveyance 90 of substrate 9) remain flat-hand position, and carry above-mentioned conveyance 90 along transport path Y1 is relative (that is, parallel with the lower surface 111 of top board 11) that process the level specified in SPACE V.
Particularly, such as, trucking department 2 is kept to comprise: a pair transport roller 21, configures in opposite directions along transport path Y1; And driving part (omitting diagram), the rotary actuation for making above-mentioned transport roller 21 synchronous.A pair transport roller 21 such as arranges multiple groups along the bearing of trend (Y-direction in illustrated example) of transport path Y1.In the structure shown here, by making each transport roller 21 and the lower surface of conveyance 90 abut against while rotate, come to carry conveyance 90 along the transport path Y1 in process SPACE V.That is, the substrate 9 being held in conveyance 90 carries out relative movement relative to jigger coupling type antenna 41.
< heating part 3 >
Heating part 3, as to by keeping trucking department 2 to keep and the parts that heat of the substrate 9 carry, is configured at the below (that is, the below of the transport path of substrate 9) of maintenance trucking department 2.Heating part 3 such as can be made up of ceramic heater.In addition, the mechanism for cooling at the substrate 9 keeping keeping in trucking department 2 etc. also and then can be set at plasma CVD device 100.
< plasma generation portion 4 >
Plasma generation portion 4 produces plasma body in process SPACE V.Plasma generation portion 4 has the jigger coupling type antenna (also referred to as " high frequency antenna ") 41 of multiple high frequency antenna as jigger coupling type.Each jigger coupling type antenna 41 such as metal tubular shape conductor being bent to the antenna of U-shaped, and is provided projectingly on the inside of process SPACE V with " U " word state.This protuberance of jigger coupling type antenna 41 is covered by the dielectric protective tube 42 formed by quartz etc.The upper end of jigger coupling type antenna 41, namely the top board 11 of the through chamber 1 in the both ends of jigger coupling type antenna 41 is given prominence to upward.Further, jigger coupling type antenna 41 is cooling water circulation etc. by making in inside, suitably cools.
Multiple jigger coupling type antenna 41 with mode (preferably, with the at equal intervals) arrangement of separating, thus is fixed on top board 11 along the direction of regulation.Particularly, multiple jigger coupling type antenna 41 along the direction of transport path Y1 and imaginary axis K described later to be arranged in chamber 1 with transport path Y1 mode in opposite directions, above-mentioned multiple jigger coupling type antenna 41 in 4 × 3 rectangular (4 jigger coupling type antennas 41 to be arranged in 3 row being classified as the direction along transport path Y1 of row along imaginary axis K).
In addition, in chamber 1, the row that multiple jigger coupling type antenna 41 is arranged in 1 row along imaginary axis K also can only be arranged to row along the direction of transport path Y1, further, the row that multiple jigger coupling type antenna 41 is arranged in 1 row along the direction of transport path Y1 also can only be arranged to row along imaginary axis K.Further, a jigger coupling type antenna 41 also only can be set in chamber 1.That is, in chamber 1, to arrange at least one jigger coupling type antenna 41 with transport path Y1 mode in opposite directions.
Fig. 2 is the figure of an example of the configuration for illustration of the jigger coupling type antenna 41 along imaginary axis K arrangement in plasma CVD device 100 and magnetic field generation section.In fig. 2, omission describes top board 11.As mentioned above, in chamber 1, multiple (being 4 in the example of Fig. 2) jigger coupling type antenna 41 also can arrange multiplely (be set as being 3 row in the example of Fig. 1 along the row that imaginary axis K is arranged in row along the direction of transport path Y1, imaginary axis K is 3), in fig. 2, the row in multiple row are shown.
Particularly, as shown in Figure 2, make the respective both ends of connection multiple jigger coupling type antenna 41 and the central point C of the line segment L obtained is configured on the imaginary axis K of regulation, make multiple jigger coupling type antenna 41 be arranged in row along above-mentioned imaginary axis K.Just, (the direction preferably intersected with the carrying direction of substrate 9 in the face of the main surface parallel with substrate 9, direction that this imaginary axis K preferably intersects along the carrying direction (Y-direction) with substrate 9, as shown in the figure, especially be preferably direction (X-direction) orthogonal with the carrying direction of substrate 9 in the face of the main surface parallel with substrate 9) axle that extends, and be preferably with treatment chamber 1 ± axle that extends of the parallel mode of the sidewall of Y side.
Further, in the example of Fig. 2,4 jigger coupling type antennas 41 are set along imaginary axis K, but are not limited to 4 along the quantity of the jigger coupling type antenna 41 of imaginary axis K arrangement, suitably can select this quantity according to the size for the treatment of chamber 1 etc.Equally, in the example of Fig. 1, the row along 4 jigger coupling type antennas 41 of imaginary axis K arrangement are arranged to 3 row along transport path Y1 direction, but are not limited to 3 row.Further, jigger coupling type antenna 41 such as also can be arranged in spination.
< High frequency power supply unit 45 >
High frequency power supply unit 45 such as has each high frequency electric source 44 of arranging relative to each jigger coupling type antenna 41 and forms, for each jigger coupling type antenna 41 supply high frequency electric power.
One end of each jigger coupling type antenna 41 is connected with high frequency electric source 44 via match box 43.Further, the other end ground connection of each jigger coupling type antenna 41.In the structure shown here, if high-frequency current (particularly, be such as the high-frequency current of 13.56MHz) flow from high frequency electric source 44 to each jigger coupling type antenna 41, then electronics accelerates by the electric field (high-frequency induction electric field) of the surrounding of jigger coupling type antenna 41, thus produce plasma body (inductively coupled plasma (ICP, Inductively Coupled Plasma)).
As mentioned above, jigger coupling type antenna 41 is in U-shaped.The jigger coupling type antenna 41 of this U-shaped is equivalent to the jigger coupling type antenna that winding number is less than a circle, and due to inductance be the above inductive coupling antenna of a circle lower than winding number, thus reduce the high-frequency voltage resulting from the two ends of jigger coupling type antenna 41, and control the HF oscillation of the plasma potential with the electrostatic coupling to the plasma body generated.For this reason, reducing the too much electrical losses with vibrating to earthy plasma potential, especially plasma potential being suppressed for lower.In addition, in Japanese Patent No. 3836636 publication, Japanese Patent No. 3836866 publication, Japanese Patent No. 4451392 publication, Japanese Patent No. 4852140 publication, disclose the high frequency antenna of this jigger coupling type.
< magnetic field generation section 31 >
As mentioned above, in fig. 2, multiple (illustrating 4) the jigger coupling type antenna 41 along imaginary axis K arrangement is shown.Then, the end of jigger coupling type antenna 41 is 8 side by side along imaginary axis K.Relative to 8 ends, 9 magnetic field generation section 31 are arranged along imaginary axis K in the mode replaced with each end of jigger coupling type antenna 41.
Fig. 3 is the figure of the brief configuration schematically showing magnetic field generation section 31.In figure 3, the cross section that magnetic field generation section between the both ends being arranged at jigger coupling type antenna 41 31 and jigger coupling type antenna 41 together cut into the vertical surface (XZ plane) comprising imaginary axis K is shown.
As shown in Figure 3, magnetic field generation section 31 is arranged at the top of top board 11.Magnetic field generation section 31 is for having the electro-magnet of the yoke 35 and coil 36 be made up of magnetic conduction steel etc.Yoke 35 comprises: discoid base portion 32; Cylindrical portion 33, from the middle body of the lower surface of base portion 32 towards top board 11, downward side is projecting; And cylindrical portion 34, projecting towards top board 11 from the edge part of the lower surface of base portion 32.Coil 36 is wound in cylindrical portion 33 around.
Top board 11 is such as made up of aluminium, and the part of top board 11 side in yoke 35 is formed with the opening surrounded by base portion 32 and cylindrical portion 33.By supplying electric current from electric current supply portion 83 (Fig. 4) to coil 36, such as, formed cylindrical portion 33 as N pole and using the radial magnetic field 37 of cylindrical portion 34 as S pole in process SPACE V.As shown in Figure 3, the process SPACE V of this magnetic field in chamber 1.
If form magnetic field in process SPACE V, then result from the plasma body of process SPACE V by above-mentioned magnetic field suction.Therefore, such as, magnetic field generation section 31 is arranged at the upper surface side of the part part in opposite directions low with the plasma density of the process SPACE V in top board 11 to produce magnetic field, thus can by the plasma uniformity of process SPACE V.Also the top board 11 of chamber 1 can be made recessed, and in this sunk part configuration magnetic field generation section 31.In this situation, the magnetic field that magnetic field generation section 31 produces easily enters in chamber 1, thus more easily attracts plasma body.The contents such as the configuration of associated magnetic fields generating unit 31 are shown in further part.
< partition member 5 >
Partition member 5 is arranged at least one the jigger coupling type antenna 41 in chamber 1 relative to the direction along transport path Y1, be arranged at upstream side and the downstream side of transport path Y1 respectively.Partition member 5 is the parts process SPACE V (in more detail, processing a part of space of top board 11 side of the chamber 1 in SPACE V) in chamber 1 being divided into the space of the upstream side of transport path Y1 and the space in downstream side relative to partition member 5.
Partition member 5 is that (-Z-direction) is projecting from the top board 11 of chamber 1 along in downward direction, and along the one side of intersecting with transport path Y1, more preferably, along the parts of the flat pattern of the one side orthogonal with transport path Y1.Partition member 5 is made up of dielectric medium.The gap that substrate 9 can be made to pass through is provided with between the upper surface and the lower end of partition member 5 of conveyance 90.
The plasma body resulting from process SPACE V stays in the space specified by a pair partition member 5, the plasma density in above-mentioned space is uprised, and above-mentioned partition member 5 is to arrange with the upstream side and downstream side mode in opposite directions of the jigger coupling type antenna 41 in process SPACE V.In addition, when jigger coupling type antenna 41 arranges multiple along imaginary axis K, the each partition member 5 corresponding with each jigger coupling type antenna 41 also can be set, but also the partition member 5 that the direction along imaginary axis K extends can be set respectively for each jigger coupling type antenna 41.In this situation, process SPACE V is more positively separated, and thus plasma density uprises more.
< gas supply part 6 and gas introduction part 61 >
Gas supply part 6 is according to the object of plasma CVD device 100, and the gas specified to the supply of process SPACE V via gas introduction part 61, such as, such as, as unstripped gas (particularly, the silane (SiH of process gas
4), ammonia (NH
3)), such as, add gas (particularly, such as argon (Ar), oxygen (O
2), hydrogen (H
2) or their mixed gas).Particularly, such as, gas supply part 6 has the importing pipe arrangement 612 that supplies for gas 611 is connected with supplies for gas 611 with one end.
The space specified by partition member 5 is formed in process SPACE V, above-mentioned partition member 5 along transport path Y1 direction to clamp the mode of jigger coupling type antenna 41 in opposite directions, be provided with the gas introduction part 62 of tubulose in each space, the gas introduction part 62 of above described tubular is for being connected importing pipe arrangement 612 with process SPACE V.Each gas introduction part 62 forms gas introduction part 61.
The other end of the importing pipe arrangement 612 of gas supply part 6 in the paths between part, thus to be connected with each gas introduction part 62 of gas introduction part 61.Further, supply valve 613 is inserted in the path pars intermedia importing pipe arrangement 612 with intervening mode.Supply valve 613 preferably can adjust the valve at the flow importing the gas that pipe arrangement 612 flows automatically, particularly, such as, preferably, comprises mass flow controller etc.In the structure shown here, if supply valve 613 is open, then the gas supplied from supplies for gas 611 supplies to gas introduction part 61, and imports process SPACE V from each gas introduction part 62 of gas introduction part 61.
Such as, suitably select to import which kind of gas with the flow of which kind of degree from gas introduction part 61 according to the kind, treatment condition, contents processing etc. of the film that will be formed at substrate 9.Namely, supply valve 613 is electrically connected with control part 8, and control part 8 controls above-mentioned supply valve 613 according to the value of being specified by operator etc., thus can with the flow needed for operator from gas introduction part 61 to the gas of the kind needed for process SPACE V import operation personnel.
< exhaust portion 7 >
Referring again to Fig. 1.Exhaust portion 7 is high-vacuum exhaust system, particularly, such as, has respectively and omits illustrated vacuum pump, vapor pipe, vent valve.One end of vapor pipe is connected with vacuum pump, and the other end of vapor pipe is connected with process SPACE V with mode of communicating.Further, vent valve is arranged at the path pars intermedia of vapor pipe.Particularly, vent valve is the valve that automatically can adjust the flow of the gas in exhaust pipe flow.In the structure shown here, if under the state of vacuum pump work, open vent valve, then process SPACE V and be exhausted, and control in the mode collaborative with mass flow controller, so that process SPACE V is remained predetermined operation pressure.
< control part 8 >
Each textural element that control part 8 and plasma CVD device 100 have is electrically connected, thus controls these each key elements.Particularly, such as, control part 8 is made up of following common FA computer, in above-mentioned FA computer, for carrying out the central processing unit (CPU of various calculation process, Central Processing Unit), for the read-only storage (ROM of storage program etc., Read OnlyMemory), as the random access memory (RAM of the work area of calculation process, RandomAccess Memory), for the hard disk of storage program or various data files etc., have via local area network (LAN, Local Area Network) etc. the data communication section etc. of data communication function be connected by bus etc.Further, control part 8 and the indicating meter for carrying out various display, the input part etc. that is made up of keyboard and mouse etc. are connected.In plasma CVD device 100, under the control action kou of control part 8, relative to the process that substrate 9 puts rules into practice.
< 2. is about the control > of the electric current supplied to magnetic field generation section 31
Fig. 4 is the figure of the Controlling System of the electric current supplied for illustration of the magnetic field generation section 31 to Fig. 2.As shown in Figure 4, plasma CVD device 100 has the electric current supply portion 83 for supplying electric current to the coil 36 of each magnetic field generation section 31.Electric current supply portion 83 has relative to the independent each direct-current amplifier (DC amplifier) 82 arranged of each magnetic field generation section 31 and each D/A (D/A) change-over circuit 81 be electrically connected with each direct-current amplifier 82.Further, control part 8 is electrically connected with each D/A switch circuit 81 in electric current supply portion 83 respectively.In addition, illustrate only 3 lines in the signal wire for each direct-current amplifier 82 and corresponding each magnetic field generation section 31 being electrically connected.
Control part 8 supplies controlling valu signal to each D/A switch circuit 81, and above-mentioned controlling valu signal is for controlling the electric current supplied to the coil 36 of each magnetic field generation section 31.The controlling valu signal supplied from control part 8 is converted to analog control signal by each D/A switch circuit 81, thus supplies to each direct-current amplifier 82 of correspondence.The analog control signal of supply is converted to control electric current by each direct-current amplifier 82, thus supplies to each coil 36 of each magnetic field generation section 31 of correspondence.In the structure shown here, control part 8 can for the independent magnetic field controlling each magnetic field generation section 31 and produce of each each magnetic field generation section 31.
Further, as shown in Figure 4, one end of each jigger coupling type antenna 41 is connected with each high frequency electric source 44 via each match box 43.Each quantity of high frequency electric source 44 and match box 43 is identical with the quantity of jigger coupling type antenna 41.That is, each high frequency electric source 44 and each match box 43 is provided with at each each jigger coupling type antenna 41.In the diagram, in order to improve visuality, only show a match box 43, the high frequency electric source 44 in each match box 43, each high frequency electric source 44.
< 3. is about the relation > of the intensity distribution of magnetic field and plasma body
Fig. 5 is the figure of the relation of intensity distribution for each magnetic field generation section 31 of Fig. 2 being illustrated as an example magnetic field and plasma body.Figure 5 illustrates following sectional view, the array of multiple (4) the jigger coupling type antenna 41 shown in Fig. 2 and multiple (9) magnetic field generation section 31 is cut into the orientation along above-mentioned array, namely by the vertical surface (XZ plane) of imaginary axis K.And, in Figure 5, represent the intensity distribution of the plasma body of the inferior portion of the imaginary axis K (Fig. 2) in process SPACE V by graphic representation G1 and graphic representation G2, above-mentioned graphic representation G1 and graphic representation G2 represents the relation of the intensity of the plasma body of the inferior portion of each position on imaginary axis K and the above-mentioned each position in process SPACE V.Graphic representation G1 be magnetic field generation section 31 not processing graphic representation when SPACE V forms magnetic field, graphic representation G2 supplies electric current to the coil 36 of magnetic field generation section 31, thus as shown in Figure 3, produces the graphic representation during magnetic field in process SPACE V.The transverse axis of each graphic representation is the position in imaginary axis K direction, and the longitudinal axis is the intensity of plasma body.The scale in the imaginary axis K direction of sectional view is identical with the scale of the transverse axis of each graphic representation.
As an example, at the interval of jigger coupling type antenna 41 relative in the optimized situation of the Ar of 10Pa, and as other conditions, such as, when the N2 of 5Pa imports process SPACE V, the plasma body of process SPACE V is created on as shown in graphic representation G1, the space between adjacent jigger coupling type antenna 41, strength degradation by the multiple jigger coupling type antennas 41 being arranged in row.This is because the interval of adjacent jigger coupling type antenna 41 is wide at the process conditions.Further, in process SPACE V, the space in the outside (+X side ,-X side) of the jigger coupling type antenna 41 at the two ends (one end of+X side, one end of-X side) of multiple jigger coupling type antenna 41, plasma intensity also declines.In more detail, compared with the plasma intensity in the space between the plasma intensity in above-mentioned space and adjacent jigger coupling type antenna 41, greatly decline.
In addition, according to result of study, especially under high gas pressure condition, the plasma intensity between adjacent jigger coupling type antenna 41 is graphic representation G1, on the contrary, also hopping phenomenon is confirmed.Though this phenomenon exists the bottleneck of high precision film forming, even if change the phase place of High frequency power between adjacent jigger coupling type antenna 41, also cannot solve.In addition, experimentally result, compared with the situation being 0 °, 180 ° with phase differential, when phase differential is 90 °, 270 °, the phenomenon of obviously display plasma intensity distribution change.This phenomenon is not caused by hertzian wave, magnetic field, but infers the phenomenon that the behavior of plasma body itself causes.
As shown in graphic representation G1, if under plasma intensity state pockety, be energized to the coil 36 of each magnetic field generation section 31, then magnetic field generation section 31 produces magnetic field, makes this magnetic field throughout process SPACE V (entering).The plasma body of process SPACE V is attracted by the magnetic field produced, its result, and before producing magnetic field, the plasma intensity in the space that plasma intensity is little becomes large.Thus, as shown in graphic representation G2, the intensity distribution of plasma body of process SPACE V homogenizing more compared with not forming the situation in magnetic field.In addition, because the top board 11 of chamber 1 remains on less than 80 DEG C by cooling system (province's sketch map), thus the temperature of each magnetic field generation section 31 can not be obviously high, thus can not lose magnetism.In addition, even if adopt permanent magnet as magnetic field generation section 31, such as, also can utilize the magnet forming magnetic field according to the processing condition that process frequency is the highest, by plasma density homogenizing, thus can not damage function of the present invention.If use electro-magnet as magnetic field generation section 31, then when changing processing condition, compared with adopting the situation of permanent magnet, can call and be optimised in advance accordingly with processing condition and be stored in the control current value of the electro-magnet of control part 8, carry out to adjust rapidly and more equably plasma intensity distribution, thus as magnetic field generation section 31, be more preferably use electro-magnet.
< 4. is about the configuration > of magnetic field generation section 31
As shown in Figure 2, be arranged in 4 jigger coupling type antennas 41 of row in chamber 1 along imaginary axis K, relative to 2 the jigger coupling type antennas 41 being positioned at two end portions along imaginary axis K, along imaginary axis K, magnetic field generation section 31 is set respectively in two parts in outside.In other words, relative to not adjacent with another jigger coupling type antenna end in each both ends of each jigger coupling type antenna 41, magnetic field generation section 31 is set respectively in the opposition side of the other end.Then, at least partially space generation magnetic field of magnetic field generation section 31 in process SPACE V.Above-mentioned space at least partially comprises particular space: this particular space refers to, relative to not adjacent with another jigger coupling type antenna 41 end in the both ends of at least one the jigger coupling type antenna 41 arranged along imaginary axis K, be positioned at the space of the side contrary with the other end.As mentioned above, above-mentioned space, namely the plasma intensity processing the Outboard Sections of the jigger coupling type antenna 41 at the two ends of the multiple jigger coupling type antennas 41 along imaginary axis K arrangement in SPACE V declines, if but magnetic field generation section 31 is set with the upper surface side of above-mentioned part part in opposite directions and generates magnetic field in top board 11, then can improve the plasma intensity of above-mentioned part, by the plasma uniformity in chamber 1.In addition, when the jigger coupling type antenna 41 arranged along transport path L is one, along imaginary axis K, magnetic field generation section 31 is set respectively in the outside at the both ends of jigger coupling type antenna 41.
Further, as shown in Figure 2, between the both ends of each jigger coupling type antenna 41 arranged along imaginary axis K, more exactly, the upper surface of the part part in opposite directions between in top board 11 and above-mentioned both ends is also provided with magnetic field generation section 31.Even if when jigger coupling type antenna 41 is one, arrange magnetic field generation section 31 too.Magnetic field generation section 31 is in the generation magnetic field, space at least partially of process SPACE V.Above-mentioned space at least partially comprises the space between the two end portions of at least one the jigger coupling type antenna arranged along imaginary axis K.Such as, when the outside at the both ends of jigger coupling type antenna 41 is provided with magnetic field generation section 31, if arrange magnetic field generation section 31 between both ends, then be not only the outside at the above-mentioned both ends in process SPACE V, space between above-mentioned, also plasma body can be attracted, thus can by plasma intensity homogenizing more.
Further, as shown in Figure 2, between the adjacent jigger coupling type antenna 41 in the multiple jigger coupling type antennas 41 arranged along imaginary axis K, also magnetic field generation section 31 can be set.At least partially space generation magnetic field of magnetic field generation section 31 in process SPACE V.Above-mentioned space at least partially comprises the space between the adjacent jigger coupling type antenna 41 in the multiple jigger coupling type antennas 41 arranged along imaginary axis K.Above-mentioned space, the plasma intensity of the part corresponding with the part between above-mentioned adjacent jigger coupling type antenna 41 namely processed in SPACE V reduces greatly, if but between above-mentioned, partly magnetic field generation section 31 is set, then can increase plasma intensity.
In addition, in the example of Fig. 2, exemplified with (that is, multiple jigger coupling type antenna 41 configures with the posture parallel with its orientation respectively) situation that line segment L and the imaginary axis K at the both ends of connection jigger coupling type antenna 41 parallel, but line segment L and imaginary axis K do not need necessarily parallel.
Fig. 6 is the figure of other examples of configuration for illustration of the jigger coupling type antenna arranged along imaginary axis and magnetic field generation section.In the example of Fig. 6, with line segment L, each jigger coupling type antenna 41 is set relative to the mode that imaginary axis K tilts.Thus, the interval between adjacent jigger coupling type antenna 41 broadens, and thus can arrange the magnetic field generation section 31 more strengthening footpath.Therefore, can by the homogenizing more of the plasma body in chamber 1.
Further, the angle that line segment L and imaginary axis K is formed also can be more than 0 °.Such as, line segment L and imaginary axis K also can be orthogonal.In this situation, each inductive coupling antenna 41 configures with the posture orthogonal with its orientation.
According to the plasma CVD device of present embodiment as above, the jigger coupling type antenna 41 supply high frequency electric power of a circle can be less than to the winding number be arranged in chamber 1, come to produce the low plasma body of plasma potential with high-density, thus while with high speed carrying substrate 9, the process utilizing plasma body is carried out.Therefore, such as, if without the need to the both ends at the transport path Y1 along chamber 1, can the load lock chamber of vacuum exhaust be connected with unload lock chambers via goalkeeper, air in chamber 1 is discharged, also can send into and send substrate 9, then can carry out the feeding comprising substrate 9, a series of process utilizing the process of plasma body and send relative to multiple substrate 9 in mode that is continuous and high speed.Thereby, it is possible to improve the productivity of plasma CVD device.
And, according to the plasma CVD device of present embodiment as above, arrange partition member 5 respectively at the upstream side of the transport path Y1 relative to the jigger coupling type antenna 41 be arranged at along transport path Y1 in chamber 1 and downstream side, above-mentioned partition member 5 is for being divided into the space of the upstream side of transport path Y1 and the space in downstream side by the process SPACE V in chamber 1.The plasma body produced stays in the process space specified by a pair partition member 5, and the plasma density in above-mentioned space is uprised, and above-mentioned partition member 5 is to arrange with the upstream side and downstream side mode in opposite directions of jigger coupling type antenna 41.Therefore, it is possible to improve the processing efficiency utilizing the substrate of plasma body.
And, according to the plasma CVD device of present embodiment as above, make the respective both ends of connection multiple jigger coupling type antenna 41 and the central point C of the line segment L obtained is configured on the imaginary axis K of the regulation of intersecting with the direction of transport path Y1, make multiple jigger coupling type antenna 41 be arranged in row along imaginary axis K.The plasma body that each jigger coupling type antenna 41 can be made to produce overlaps, and generates along imaginary axis K direction length and highdensity plasma body, even thus long along imaginary axis K direction substrate, also can improve processing efficiency.
Further, according to the plasma CVD device of present embodiment as above, the respective both ends of multiple jigger coupling type antennas 41 arranged along imaginary axis K are configured on imaginary axis K.Thus, be not configured at both ends compared with the situation on imaginary axis K, the narrower intervals between adjacent jigger coupling type antenna 41, thus can make plasma body densification more by overlap.
Further, according to the plasma CVD device of present embodiment as above, the process SPACE V also had in chamber 1 produces at least one magnetic field generation section 31 in magnetic field.Plasma body is by magnetic field suction, and the mode in part generation magnetic field that thus can be low with the plasma density in process SPACE V arranges magnetic field generation section 31, by the plasma uniformity in chamber 1.Thus, such as, the control etc. of the thickness of film forming can be carried out high precision int, can processing accuracy be improved thus.
Further, according to the plasma CVD device of present embodiment as above, there is the magnetic field generation section in the generation magnetic field, space at least partially in the process SPACE V in chamber 1.Above-mentioned space at least partially comprises particular space: this particular space refers to, relative to be arranged in chamber 1 along imaginary axis K row at least one jigger coupling type antenna 41 both ends in not adjacent with another jigger coupling type antenna 41 end, be positioned at the space with the contrary side of the other end.This space is the weak space of plasma intensity, but attracts plasma body in this generation magnetic field, space, thus can improve the plasma intensity in this space, by the plasma uniformity in chamber 1.And, under the processing condition different greatly with the Basic Design of jigger coupling type antenna, when not with Magnetic control, the variation of the plasma intensity distribution in this space becomes large, and be difficult to be used in into the high process of film uniformity, if but with Magnetic control, then correcting plasma intensity distribution equably, thus also under a variety of process conditions, uniform film forming process can be realized.Therefore, it is possible to utilize the jigger coupling type antenna of less amount to carry out film forming to large substrate, and by plasma CVD device miniaturization, or with few electric power, film forming is carried out to large-scale substrate, to promote energy-saving.
Further, according to the plasma CVD device of present embodiment as above, there is the magnetic field generation section in the generation magnetic field, space at least partially in the process SPACE V in chamber 1.Above-mentioned space at least partially comprises the space between the both ends of jigger coupling type antenna.Therefore, even if the space in the outside at the both ends of the jigger coupling type antenna 41 in process SPACE V is formed with magnetic field, by the space between the both ends of jigger coupling type antenna and then magnetic field can be produced, by the plasma uniformity in chamber 1.
Further, according to the plasma CVD device of present embodiment as above, there is the magnetic field generation section in the generation magnetic field, space at least partially in the process SPACE V in chamber 1.Above-mentioned space at least partially comprises in chamber 1, is being arranged in the space between the adjacent jigger coupling type antenna 41 in multiple jigger coupling type antennas 41 of row along imaginary axis K.This space is the weak space of plasma intensity, but owing to attracting plasma body in this generation magnetic field, space, thus can improve the plasma intensity in this space, by the plasma uniformity in chamber 1.And then, if in this formation magnetic field, space, then compared with not forming the situation in magnetic field, can the interval of adjacent jigger coupling type antenna 41 be set as wider, thus can adopt the jigger coupling type antenna 41 of less amount, and have the energy-saving for device.
And, according to the plasma CVD device of present embodiment as above, magnetic field generation section 31 is electro-magnet, also comprise: electric current supply portion 83, with the coil supply electric current of the mode changed to magnetic field generation section 31, and control part 8, for controlling the electric current that electric current supply portion 83 supplies.Thereby, it is possible to adjust magnetic field according to the plasma intensity of the position being provided with magnetic field generation section 31, thus can by the homogenizing more of the plasma body in chamber 1.And then, even if be changed in the processing condition of gaseous species, dividing potential drop etc., when making plasma intensity distribution change, by adjustment magnetic field, plasma body can be attracted with the part that suitable intensity distributes low to plasma intensity.Thereby, it is possible to realize soft, rapid and uniform plasma intensity distribution relative to kinds of processes.
Be shown specifically and describe the present invention, but above-mentioned description is the illustration of whole scheme, unrestricted.Therefore, the present invention can suitably be out of shape and omit embodiment in this scope of invention.
Claims (9)
1. a plasma CVD device, is characterized in that,
Comprise:
Chamber,
Keep trucking department, in the inside of above-mentioned chamber, keep the substrate as handling object, and relatively carry along transport path,
At least one jigger coupling type antenna, to be arranged at the inside of above-mentioned chamber with above-mentioned transport path mode in opposite directions, and winding number is less than a circle,
High frequency power supply unit, at least one jigger coupling type antenna supply high frequency electric power above-mentioned, and
Gas introduction part, for importing the gas of regulation to the inside of above-mentioned chamber;
Importing the gas of afore mentioned rules to the inside of above-mentioned chamber from above-mentioned gas introduction part, and from above-mentioned High frequency power supply unit to the state that at least one jigger coupling type antenna supply high frequency electric power above-mentioned produces plasma body, carry aforesaid substrate by above-mentioned maintenance trucking department along above-mentioned transport path.
2. plasma CVD device according to claim 1, is characterized in that,
Have: with above-mentioned transport path in opposite directions, and be arranged at the inside of above-mentioned chamber along the direction of above-mentioned transport path, and winding number is less than at least one jigger coupling type antenna of a circle;
Arrange partition member respectively at the upstream side of the transport path relative at least one jigger coupling type antenna above-mentioned and downstream side, it is the space of the upstream side of above-mentioned transport path and the space in downstream side that above-mentioned partition member is used for the process separated by spaces of the inside of above-mentioned chamber.
3. plasma CVD device according to claim 1, is characterized in that,
Have: with above-mentioned transport path in opposite directions, and become row along the imaginary axis of the regulation of intersecting with the direction of above-mentioned transport path in the internal arrangement of above-mentioned chamber, and winding number is less than multiple jigger coupling type antennas of a circle;
Make the respective both ends of the above-mentioned multiple jigger coupling type antenna of connection and the central point of the line segment obtained is configured in above-mentioned imaginary axis, make above-mentioned multiple jigger coupling type antenna be arranged in row along above-mentioned imaginary axis.
4. plasma CVD device according to claim 3, is characterized in that, the multiple jigger coupling type antenna both ends separately arranged along above-mentioned imaginary axis are configured in above-mentioned imaginary axis.
5. plasma CVD device according to any one of claim 1 to 4, is characterized in that, also comprises at least one magnetic field generation section, and at least one magnetic field generation section above-mentioned is used for the generation magnetic field, process space in above-mentioned chamber.
6. plasma CVD device according to claim 5, is characterized in that,
Have: with above-mentioned transport path in opposite directions, and become row along the imaginary axis of the regulation of intersecting with the direction of above-mentioned transport path in the internal arrangement of above-mentioned chamber, and winding number is less than at least one jigger coupling type antenna of a circle;
Have magnetic field generation section, above-mentioned magnetic field generation section is used for the generation magnetic field, space at least partially in the process space in above-mentioned chamber;
Above-mentioned space at least partially comprises particular space: this particular space refers to, relative to not adjacent with another jigger coupling type antenna end in the both ends of at least one jigger coupling type antenna above-mentioned, is positioned at the space of the side contrary with the other end.
7. plasma CVD device according to claim 5, is characterized in that,
Have: to be arranged at the inside of above-mentioned chamber with above-mentioned transport path mode in opposite directions, and winding number is less than at least one jigger coupling type antenna of a circle;
Have magnetic field generation section, above-mentioned magnetic field generation section is used for the generation magnetic field, space at least partially in the process space in above-mentioned chamber;
Above-mentioned space at least partially comprises the space between the two end portions of at least one jigger coupling type antenna above-mentioned.
8. plasma CVD device according to claim 5, is characterized in that,
Have: with above-mentioned transport path in opposite directions, and become row along the imaginary axis of the regulation of intersecting with the direction of above-mentioned transport path in the internal arrangement of above-mentioned chamber, and winding number is less than multiple jigger coupling type antennas of a circle;
Have magnetic field generation section, above-mentioned magnetic field generation section is used for the generation magnetic field, space at least partially in the process space in above-mentioned chamber;
Above-mentioned space at least partially comprises the space between the adjacent jigger coupling type antenna in above-mentioned multiple jigger coupling type antenna.
9. plasma CVD device according to claim 5, is characterized in that,
At least one magnetic field generation section above-mentioned is electro-magnet;
Also comprise:
Electric current supply portion, with the coil supply electric current of the mode that can change at least one magnetic field generation section above-mentioned, and
Control part, for controlling the electric current of above-mentioned electric current supply portion supply.
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| CN105472857A (en) * | 2014-09-30 | 2016-04-06 | 株式会社思可林集团 | Plasma processing apparatus |
| CN110364408A (en) * | 2018-04-11 | 2019-10-22 | 北京北方华创微电子装备有限公司 | Inductance coupling device and apparatus for processing plasma |
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| JP7394632B2 (en) * | 2020-01-16 | 2023-12-08 | 東京エレクトロン株式会社 | Array antenna and plasma processing equipment |
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