TW201523778A - Plasma CVD apparatus - Google Patents

Abstract

The present invention improves the production capacity of an inductive coupling type plasma CVD apparatus. The plasma CVD apparatus includes: a chamber; a holding and moving part which holds a target substrate inside the chamber and moves it along a transfer path; at least one inductive coupling type antenna, whose winding number is less than a round, being set in opposition to the transfer path inside the chamber; a high-frequency electric power supply part supplying high-frequency power to the at least one inductive coupling type antenna; and a gas inlet part which introduces specified gas into the inside of the chamber. Furthermore, under the status of the gas inlet part introducing the specified gas into the inside of the chamber, the plasma CVD apparatus supplies high-frequency power from the high-frequency electric power supply part to the at least one inductive coupling type antenna and thereby makes plasma be generated, and the substrate is moved along the transfer path by the holding and moving part.

Description

Plasma CVD device

The present invention relates to a plasma CVD apparatus for forming a thin film on a film-coated object by plasma-enhanced chemical vapor deposition (plasma-enhanced chemical vapor deposition).

As such a plasma processing apparatus, Patent Document 1 discloses an inductive coupling type device which includes an antenna including a linear or plate-shaped conductor which is terminated without being surrounded and has a short length of a quarter wavelength of a higher frequency. The high-frequency electric power is supplied to generate a high-frequency electric field, and plasma is generated by the electric field to perform surface treatment such as film formation on the substrate surface. In this apparatus, a plurality of antennas are provided on each of four sides of a vacuum container having a rectangular planar shape, and a plurality of antennas provided on four sides are supplied in parallel to supply high-frequency power to perform processing on a large-area substrate.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 3751909

However, in the plasma processing apparatus of Patent Document 1, in the step of loading the substrate to be processed into the vacuum container and the step of carrying out the processed substrate from the vacuum container, since the substrate is not processed, there is a decrease in productivity. And other issues.

The present invention has been made to solve such problems, and an object thereof is to provide a technique for improving the productivity of a plasma CVD apparatus.

In order to solve the above-described problems, the plasma CVD apparatus according to the first aspect includes a chamber, and a holding and transporting unit that holds the substrate to be processed and transports the substrate along the transport path in the chamber; at least one inductive coupling type The antenna has a number of windings of less than one week, and is disposed in the chamber opposite to the transport path; the high-frequency power supply unit supplies high-frequency power to the at least one inductive coupling antenna; and a gas introduction unit a predetermined gas is introduced into the chamber, and the predetermined gas is introduced into the chamber from the gas introduction portion, and the high-frequency power supply unit supplies high-frequency power to the at least one inductive coupling antenna. In the state in which the plasma is generated, the substrate is transported along the transport path by the holding transport unit.

A plasma CVD apparatus according to a second aspect is characterized in that, in the plasma CVD apparatus of the first aspect, the number of windings disposed in the chamber along the direction of the transport path is opposite to the transport path At least one inductive coupling type antenna for one week, and a space for separating the processing space in the chamber into the upstream side of the transport path on the upstream side and the downstream side of the transport path with respect to the at least one inductive coupling type antenna And a partition member of the space on the downstream side.

A plasma CVD apparatus according to a third aspect is the plasma CVD apparatus according to the first aspect, comprising: a plurality of inductive coupling type antennas having a number of windings of less than one week, wherein the inductive coupling type antenna is opposed to the transport path, and A predetermined imaginary axis that intersects the direction of the transport path is arranged in a row in the chamber; and a center point of a line segment connecting both end portions of each of the plurality of inductive coupling antennas is arranged in the above-mentioned imaginary On the shaft, the plurality of inductive coupling antennas are arranged in a row along the imaginary axis.

A plasma CVD apparatus according to a fourth aspect is the plasma CVD apparatus according to the third aspect, wherein both ends of each of the plurality of inductive coupling type antennas disposed along the virtual axis are disposed on On the hypothetical axis.

A plasma CVD apparatus according to any one of the first to fourth aspects, further comprising at least one magnetic field generating portion that generates a magnetic field in a processing space in the chamber.

A plasma CVD apparatus according to a sixth aspect is the plasma CVD apparatus according to the fifth aspect, comprising at least one inductive coupling type antenna having a number of windings of less than one week, and a magnetic field generating unit, wherein the inductive coupling type antenna The transport path is opposed to each other, and a predetermined virtual axis intersecting the direction of the transport path is arranged in a row in the chamber, and the magnetic field generating unit generates a magnetic field in at least a part of a processing space in the chamber, and The at least one portion of the space is a space including an end portion of the both end portions of the at least one inductive coupling type antenna that is not adjacent to the other inductive coupling type antenna and opposite to the other end portion.

A plasma CVD apparatus according to a seventh aspect is the plasma CVD apparatus according to the fifth aspect, comprising at least one inductive coupling type antenna having a number of windings of less than one week, and a magnetic field generating unit, wherein the inductive coupling type antenna The transport path is disposed opposite to the chamber, and the magnetic field generating unit generates a magnetic field in at least a part of a processing space in the chamber, and the at least one portion of the space includes both ends of the at least one inductive coupling type antenna The space between the spaces.

The plasma CVD apparatus according to the eighth aspect is the plasma CVD apparatus according to the fifth aspect, comprising: a plurality of inductive coupling type antennas having a number of windings of less than one week; and a magnetic field generating unit, wherein the inductive coupling type antenna The transport path is opposed to each other, and a predetermined virtual axis intersecting the direction of the transport path is arranged in a row in the chamber, and the magnetic field generating unit generates a magnetic field in at least a part of a processing space in the chamber, and the magnetic field is generated. At least a portion of the space includes a space between spaces between adjacent ones of the plurality of inductively coupled antennas.

The plasma CVD apparatus of the ninth aspect is the plasma CVD apparatus of the fifth aspect, wherein At least one magnetic field generating unit electromagnet is further provided, and the plasma CVD apparatus further includes a current supply unit that supplies a current to the coil of the at least one magnetic field generating unit, and a control unit that controls the current The current supplied by the supply unit.

According to the present invention, high-frequency electric power can be supplied to the inductively coupled antenna provided in the chamber for less than one turn, and plasma having a low plasma potential can be generated at a high density. Therefore, the substrate can be transported at a high speed. The treatment using plasma is carried out. Therefore, for example, if the chamber is connected to the unloading interlocking vacuum chamber and the unloading interlocking vacuum chamber by vacuuming the both ends of the transport path along the transport path, the substrate can be opened without opening the atmosphere in the chamber. In the case of moving in and out, a series of processes including loading of a substrate, processing using plasma, and carrying out a series of processes can be performed continuously and at high speed for a plurality of substrates. Thereby, the productivity of the plasma CVD apparatus can be increased.

1‧‧‧ chamber

2‧‧‧ Keeping the transport department

3‧‧‧ heating department

4‧‧‧The Plasma Generation Department

5‧‧‧Parts

6‧‧‧Gas Supply Department

7‧‧‧Exhaust Department

8‧‧‧Control Department

9‧‧‧Substrate

11‧‧‧ top board

21‧‧‧Transport roller

31‧‧‧Magnetic field generation department

32‧‧‧ base

33‧‧‧Cylinder

34‧‧‧Cylinder

35‧‧ y yoke

36‧‧‧ coil

37‧‧‧ magnetic field

41‧‧‧Inductively coupled antenna

42‧‧‧Protection tube

43‧‧‧matcher

44‧‧‧High frequency power supply

45‧‧‧High Frequency Power Supply Department

61‧‧‧Gas introduction department

62‧‧‧ gas introduction member

81‧‧‧D/A conversion circuit

82‧‧‧DC amplifier

83‧‧‧ Current Supply Department

90‧‧‧ Carrier

100‧‧‧ Plasma CVD device

111‧‧‧lower surface

121‧‧‧ Move in

122‧‧‧Moving out

123‧‧‧ brake

124‧‧‧ brake

611‧‧‧ gas supply source

612‧‧‧Introduction piping

613‧‧‧Supply valve

C‧‧‧ center point

K‧‧‧Imaginary axis

L‧‧‧Transportation path

V‧‧‧ processing space

Y1‧‧‧Transfer path

Fig. 1 is a view schematically showing a schematic configuration of a plasma CVD apparatus according to an embodiment.

Fig. 2 is a view for explaining an example of arrangement of an inductively coupled antenna and a magnetic field generating portion arranged along a virtual axis.

Fig. 3 is a view schematically showing a schematic configuration of a magnetic field generating unit of Fig. 2;

Fig. 4 is a view for explaining a control system for supplying a current to the magnetic field generating unit of Fig. 2;

Figure 5 is a diagram for explaining the relationship between the magnetic field and the intensity distribution of the plasma.

Fig. 6 is a view for explaining another example of the arrangement of the inductively coupled antenna and the magnetic field generating portion arranged along the imaginary axis.

Hereinafter, embodiments of the present invention will be described based on the drawings. In the drawings, the same reference numerals are given to the parts having the same components and functions, and the repeated description is omitted in the following description. Moreover, each schema is a pattern representative, and for easy understanding, there are parts to be The size or number of cases are exaggerated or simplified. Further, in some of the drawings, the XYZ orthogonal coordinate axes are appropriately noted for the purpose of explaining the directions. The direction of the Z axis in the coordinate axis indicates the direction of the vertical line, and the XY plane is the horizontal plane. Further, the X-axis and the Y-axis are respectively axes parallel to the side walls of the processing chamber 1.

<1. Overall Configuration of Plasma CVD Apparatus 100>

Fig. 1 is a view schematically showing a schematic configuration of a plasma CVD apparatus 100 according to an embodiment. The plasma CVD apparatus 100 is a device for forming a thin film on a film-coated object (here, for example, a substrate 9) by plasma-enhanced chemical vapor deposition (CVD).

The plasma CVD apparatus 100 includes a processing chamber 1 in which a processing space V is formed, a holding portion 2 that holds and transports the substrate 9 (specifically, a substrate 9 disposed on the carrier 90), and a heating portion 3 The substrate 9 is heated; a plasma generating portion 4 that generates plasma in the processing space V; and a partition member 5. Further, the plasma CVD apparatus 100 includes a high-frequency power supply unit 45 that supplies high-frequency power to the plasma generating unit 4, and a magnetic field generating unit 31 that generates a magnetic field in the processing space V. Further, the plasma CVD apparatus 100 does not impair the usefulness of the present invention even if the magnetic field generating unit 31 is not provided.

Further, the plasma CVD apparatus 100 includes a gas introduction unit 61 that introduces a predetermined gas into the processing space V in the chamber 1, a gas supply unit 6, which supplies gas to the gas introduction unit 61, and an exhaust unit 7, which The gas of the processing space V is discharged from the processing space V. Further, the plasma CVD apparatus 100 includes a control unit 8 that controls each of the above-described constituent elements.

<Processing chamber 1>

The processing chamber 1 is a hollow member having a rectangular parallelepiped shape, and a processing space V is formed inside. The top plate 11 of the processing chamber 1 is disposed such that the lower surface 111 thereof has a horizontal posture, and the inductive coupling type antenna 41 and the partition member 5 are protruded from the lower surface 111 toward the processing space V. Further, a heating unit 3 is disposed in the vicinity of the bottom plate of the processing chamber 1. Further, on the upper side of the heating unit 3, a transport path Y1 for transporting the substrate 9 by the holding transport unit 2 is defined. Transport path The extending direction of Y1 is the Y-axis direction, and the conveying direction of the substrate 9 in the transport path Y1 is the +Y direction. In the end portion on the upstream side in the transport direction of the both end portions of the chamber 1 along the transport path Y1, a carry-in port 121 for carrying the substrate 9 into the chamber 1 is provided, and the end portion on the downstream side in the transport direction is provided. The substrate 9 is carried out to the transfer port 122 outside the chamber 1. A gate ("loading gate") 123 is provided in the upstream inlet port 121, and a gate ("lifting gate") 124 is provided in the downstream side port 122. The gates 123, 124 are switchable between an open state and a closed state. Further, the carry-in port 121 and the carry-out port 122 are configured to be airtight in such a manner that the opening portions of the other chambers such as the load lock chamber and the unloading lock chamber are kept airtight.

<maintaining the transport unit 2>

Here, the substrate 9 as the object to be coated is placed on the upper surface of the plate-shaped carrier 90. The holding conveyance unit 2 holds the carrier 90 introduced into the processing space V through the transfer port 121 of the processing chamber 1 in a horizontal posture (that is, the carrier 90 on which the substrate 9 is disposed), and moves it along the processing space V. The transport path Y1 is transported relative to the predetermined level (that is, parallel to the lower surface 111 of the top plate 11).

Specifically, the holding conveyance unit 2 includes, for example, a pair of conveyance rollers 21 that are disposed to face each other with the conveyance path Y1 interposed therebetween, and a drive unit (not shown) that drives the pair of conveyance rollers 21 to Synchronous rotation. The pair of transport rollers 21 is provided with a complex array, for example, along the extending direction of the transport path Y1 (in the illustrated example, the Y direction). In this configuration, each of the transport rollers 21 rotates while abutting against the lower surface of the carrier 90, thereby transporting the carrier 90 along the transport path Y1 in the processing space V. That is, the substrate 9 held by the carrier 90 relatively moves with respect to the inductive coupling type antenna 41.

<heating section 3>

The heating unit 3 is a member that heats the substrate 9 held by the holding conveyance unit 2 and is disposed below the holding conveyance unit 2 (that is, below the conveyance path of the substrate 9). The heating unit 3 can be constituted, for example, by a ceramic heater. Further, in the plasma CVD apparatus 100, a mechanism for cooling the substrate 9 held by the holding unit 2 or the like may be further provided.

<The plasma generating unit 4>

The plasma generating unit 4 generates plasma in the processing space V. The plasma generating unit 4 includes a plurality of inductive coupling antennas (also referred to as "high-frequency antennas") 41 as inductive coupling type high-frequency antennas. Each of the inductive coupling antennas 41 is formed by bending a metal tubular conductor into a U shape, for example, and is protruded inside the processing space V in a "U" state. The protruding portion of the inductive coupling type antenna 41 is covered by a protective tube 42 containing a dielectric such as quartz. The upper end portion of the inductive coupling type antenna 41, that is, both end portions of the inductive coupling type antenna 41 penetrates the top plate 11 of the chamber 1 and protrudes upward. Moreover, the inductive coupling type antenna 41 appropriately cools the cooling water by circulating it inside.

The plurality of inductive coupling antennas 41 are arranged at intervals (preferably at equal intervals) along a predetermined direction, and are fixed to the top plate 11. Specifically, the plurality of inductive coupling antennas 41 are arranged in a matrix of 4 × 3 along the direction of the transport path Y1 and the following virtual axis K so as to oppose the transport path Y1 (4 along the virtual axis K) The inductively coupled antennas 41 are arranged in a row and arranged in three rows along the direction of the transport path Y1) in the chamber 1.

Further, in the chamber 1, a plurality of inductive coupling antennas 41 are arranged in a row along the virtual axis K, and only one row may be provided along the direction of the transport path Y1, or may be along the transport path. In the direction of Y1, a plurality of inductive coupling type antennas 41 are arranged in one line, and only one line is arranged along the virtual axis K. Further, only one inductive coupling type antenna 41 may be provided in the chamber 1. That is, at least one inductive coupling antenna 41 is disposed in the chamber 1 opposite to the transport path Y1.

FIG. 2 is a view for explaining an example of the arrangement of the inductive coupling type antenna 41 and the magnetic field generating portion arranged along the virtual axis K in the plasma CVD apparatus 100. In Fig. 2, the representation of the top plate 11 is omitted. As described above, in the chamber 1, a plurality of (four in the example of FIG. 2) inductive coupling type antennas 41 are arranged in a line along the imaginary axis K to set a plurality of lines along the direction of the transport path Y1 ( In the example of Fig. 1, three rows are set, and three hypothetical axes K) are set. In Fig. 2, one of the plurality of rows is shown.

Specifically, as shown in FIG. 2, a plurality of inductive couplings are performed by arranging a center point C of a line segment L connecting both end portions of each of the plurality of inductive coupling type antennas 41 on a predetermined virtual axis K. The antennas 41 are arranged in one line along the imaginary axis K. However, the imaginary axis K preferably has a direction intersecting the transport direction (Y direction) of the substrate 9 (preferably in a direction parallel to the transport direction of the substrate 9 in a plane parallel to the main surface of the substrate 9). Preferably, the axis extending in a direction (X direction) orthogonal to the conveying direction of the substrate 9 in a plane parallel to the main surface of the substrate 9 as shown in the drawing is preferably the ±Y side of the processing chamber 1. The axis of the side wall extends in parallel.

Further, in the example of FIG. 2, four inductive coupling antennas 41 are provided along the virtual axis K, but the number of the inductively coupled antennas 41 arranged along the virtual axis K is not necessarily four, depending on the processing chamber. The size of 1 or the like is appropriately selected. Similarly, in the example of FIG. 1, the four inductive coupling antennas 41 arranged along the virtual axis K are arranged in three rows along the transport path Y1 direction, but three rows are not necessarily provided. Further, the inductive coupling type antennas 41 may be arranged in a zigzag shape, for example.

<High-frequency power supply unit 45>

The high-frequency power supply unit 45 is configured to include, for example, each of the high-frequency power sources 44 provided for the respective inductive coupling antennas 41, and supplies high-frequency power to each of the inductive coupling antennas 41.

One end of each of the inductive coupling type antennas 41 is connected to the high frequency power source 44 via a matching box 43. Further, the other end of each of the inductive coupling type antennas 41 is grounded. In this configuration, when a high-frequency current (specifically, a high-frequency current of, for example, 13.56 MHz) flows from the high-frequency power source 44 to each of the inductive coupling antennas 41, the electric field around the inductive coupling type antenna 41 (high frequency) The electric field is induced to accelerate the electrons, thereby generating plasma (Inductively Coupled Plasma (ICP)).

As described above, the inductive coupling type antenna 41 has a U shape. Such a U-shaped inductively coupled antenna 41 corresponds to an inductively coupled antenna having a number of windings less than one turn, and since the inductance is lower than an inductive coupling antenna having a number of turns of one or more turns, both ends of the inductively coupled antenna 41 are generated. The high frequency voltage is lowered to suppress the plasma generated by the electrostatic coupling of the generated plasma The high frequency oscillation of the potential. Therefore, the excessive electron loss generated by the oscillation of the plasma potential to the ground potential is reduced, and the plasma potential is suppressed particularly low. Further, such an inductive coupling type high frequency antenna is disclosed in Japanese Patent No. 3836636, Japanese Patent No. 3836866, Japanese Patent No. 4,541,392, and Japanese Patent No. 4,852,140.

<Magnetic field generating unit 31>

As described above, a plurality of (four in the drawing) inductive coupling type antennas 41 arranged along the virtual axis K are shown in FIG. Further, the end portions of the inductive coupling type antenna 41 are arranged in eight along the virtual axis K. The respective end portions of the nine magnetic field generating portions 31 and the inductive coupling type antenna 41 are alternately arranged along the virtual axis K with respect to the eight end portions.

FIG. 3 is a view schematically showing a schematic configuration of the magnetic field generating unit 31. In FIG. 3, the magnetic field generating unit 31 provided between the both end portions of the inductive coupling antenna 41 and the inductive coupling antenna 41 are cut along the vertical plane (XZ plane) including the virtual axis K. .

As shown in FIG. 3, the magnetic field generating portion 31 is disposed above the top plate 11. The magnetic field generating unit 31 includes an electromagnet including a yoke 35 such as a transmission steel and a coil 36. The yoke 35 has a disk-shaped base portion 32, a cylindrical portion 33 projecting from the central portion of the lower surface of the base portion 32 toward the lower side of the top plate 11, and a circle protruding from the peripheral portion of the lower surface of the base portion 32 toward the top plate 11. The barrel portion 34. The coil 36 is wound around the cylindrical portion 33.

The top plate 11 includes, for example, aluminum, and a portion of the yoke 35 on the side of the top plate 11 is formed with an opening surrounded by the base portion 32 and the cylindrical portion 33. By supplying a current to the coil 36 from the current supply unit 83 (FIG. 4), a radial magnetic field 37 having the cylindrical portion 33 as an N pole and the cylindrical portion 34 as an S pole is formed in the processing space V. As shown in FIG. 3, the magnetic field extends throughout the processing space V in the chamber 1.

If a magnetic field is formed in the processing space V, the plasma generated in the processing space V is pulled by the magnetic field. Therefore, for example, the plasma of the processing space V can be made uniform by arranging the magnetic field generating portion 31 on the upper surface side of the portion of the top plate 11 opposite to the portion of the processing space V where the plasma density is lower, and generating the magnetic field. Chemical. The top plate 11 of the chamber 1 may be recessed, and the magnetic field generating portion 31 is disposed in the recessed portion. In this case, the magnetic field generated by the magnetic field generating portion 31 becomes more It is easy to enter the chamber 1, and therefore, it is easier to pull the plasma. The arrangement of the magnetic field generating unit 31 and the like will be described below.

<separating member 5>

The partition member 5 is provided on the upstream side and the downstream side of the transport path Y1, respectively, with respect to at least one inductive coupling antenna 41 disposed in the chamber 1 along the direction of the transport path Y1. The partition member 5 is a member that separates the processing space V in the chamber 1 (more specifically, a portion of the space on the top plate 11 side of the chamber 1 in the processing space V) from the partition member 5 into the transport path Y1. The space on the upstream side and the space on the downstream side.

The partition member 5 protrudes from the top plate 11 of the chamber 1 in the downward direction (-Z direction), and is a member having a flat shape along a surface intersecting the transport path Y1, more preferably orthogonal to the transport path Y1. . The partition member 5 contains a dielectric body. A gap through which the substrate 9 can pass is provided between the upper surface of the carrier 90 and the lower end of the partition member 5.

The plasma generated in the processing space V is retained in the processing space V, and is disposed opposite to each other on the upstream side and the downstream side of the inductive coupling type antenna 41, and the plasma density of the space is changed. high. In the case where the inductive coupling type antenna 41 is provided along the virtual axis K in a plurality of cases, the partition members 5 corresponding to the respective inductive coupling type antennas 41 may be provided, but the inductive coupling type antennas 41 may be provided with respect to the respective inductive coupling type antennas 41. Each of the partition members 5 extends in the direction of the imaginary axis K. In this case, the processing space V is more surely separated, and therefore, the plasma density becomes higher.

<Gas supply unit 6 and gas introduction unit 61>

The gas supply unit 6 sets a gas defined by the purpose of the plasma CVD apparatus 100, for example, a raw material gas as a processing gas (specifically, silane (SiH ₄ ), ammonia (NH ₃ )), for example, an additive gas (specifically, For example, a mixed gas of argon (Ar), oxygen (O ₂ ), hydrogen (H ₂ ), or the like is supplied to the processing space V via the gas introduction unit 61. Specifically, the gas supply unit 6 includes, for example, a gas supply source 611 and an introduction pipe 612 whose one end is connected to the gas supply source 611.

In the processing space V, a space defined by the partition members 5 opposed to each other via the inductive coupling antenna 41 in the direction of the transport path Y1 is formed, and in each space, the tubular gas introduction member 62 introduces the piping 612 and the processing space V. Connected to set. Each gas introduction member 62 constitutes a gas introduction portion 61.

The other end of the introduction pipe 612 of the gas supply unit 6 branches in the middle of the path, and is connected to each of the gas introduction members 62 of the gas introduction unit 61. Further, a supply valve 613 is inserted in the middle of the path of the introduction pipe 612. The supply valve 613 is preferably a valve that can automatically adjust the flow rate of the gas flowing through the introduction pipe 612. Specifically, for example, it preferably includes a mass flow controller or the like. In this configuration, when the supply valve 613 is opened, the gas supplied from the gas supply source 611 is supplied to the gas introduction portion 61, and is introduced into the processing space V from each of the gas introduction members 62 of the gas introduction portion 61.

The degree to which the gas is introduced from the gas introduction unit 61 is appropriately selected depending on, for example, the type of the film to be formed on the substrate 9, the processing conditions, the processing contents, and the like. In other words, the supply valve 613 is electrically connected to the control unit 8, and the control unit 8 controls the gas of a type desired by the operator to be introduced from the gas introduction unit 61 at a flow rate desired by the operator based on the value specified by the operator or the like. Processing space V.

<Exhaust part 7>

Referring again to Figure 1. The exhaust unit 7 is a high-vacuum exhaust system, and specifically includes, for example, a vacuum pump, an exhaust pipe, and an exhaust valve, respectively (not shown). One end of the exhaust pipe is connected to the vacuum pump, and the other end is connected to the processing space V. Further, the exhaust valve is provided in the middle of the path of the exhaust pipe. Specifically, the exhaust valve system automatically adjusts the flow of the gas flowing through the exhaust pipe. In this configuration, the control is performed such that when the exhaust valve is opened in a state where the vacuum pump is actuated, the processing space V is exhausted, and the processing space V is maintained in a predetermined process in cooperation with the mass flow controller. pressure.

<Control unit 8>

The control unit 8 is electrically connected to each component included in the plasma CVD apparatus 100, and is controlled. These elements. Specifically, the control unit 8 is constituted by, for example, a general FA (Factory Automation) computer that performs various arithmetic processing such as a CPU (Central Processing Unit) and a ROM of a memory program (Read Only). Memory, read-only memory, RAM (Random Access Memory), memory program, or various data files that are used in the processing area of the operation processing, and have a local area network (LAN) via a LAN (Local Area Network) The data communication unit of the data communication function, etc., is connected by a bus bar or the like. Further, the control unit 8 is connected to a display for performing various displays, an input unit including a keyboard and a mouse, and the like. In the plasma CVD apparatus 100, predetermined processing is performed on the substrate 9 under the control of the control unit 8.

<2. Control of Current Supplyed to Magnetic Field Generating Unit 31>

4 is a view for explaining a control system for supplying a current to the magnetic field generating unit 31 of FIG. 2. As shown in FIG. 4, the plasma CVD apparatus 100 includes a current supply unit 83 that supplies a current to the coil 36 of each of the magnetic field generating units 31. The current supply unit 83 includes DC (Direct Current) amplifiers 82 that are independently provided for the respective magnetic field generating units 31, and D/A (Digital-to-Analog) that is electrically connected to each of the DC amplifiers 82. Conversion circuit 81. Further, the control unit 8 is electrically connected to each of the D/A conversion circuits 81 in the current supply unit 83. Further, only three of the signal lines electrically connecting the respective DC amplifiers 82 to the respective magnetic field generating portions 31 are shown.

The control unit 8 supplies a control value signal for controlling the current supplied to the coils 36 of the respective magnetic field generating units 31 to the respective D/A conversion circuits 81. Each of the D/A conversion circuits 81 converts the control value signal supplied from the control unit 8 into an analog control signal and supplies it to the corresponding DC amplifier 82. Each of the DC amplifiers 82 converts the analog control signal supplied to the control current, and supplies it to each of the coils 36 of the respective magnetic field generating units 31. With this configuration, the control unit 8 can independently control the magnetic fields generated by the respective magnetic field generating units 31 for the respective magnetic field generating units 31.

Moreover, as shown in FIG. 4, one end of each inductive coupling type antenna 41 is connected via each matching unit 43. Connected to each of the high frequency power sources 44. The number of each of the high frequency power source 44 and the matching unit 43 is the same as the number of the inductive coupling type antennas 41. That is, each of the inductive coupling type antennas 41 is provided with each of the high frequency power sources 44 and the matching units 43. In FIG. 4, in order to improve the visibility, only the matching unit 43, one of the high frequency power sources 44, and the high frequency power source 44 are displayed.

<3. Relationship between magnetic field and plasma intensity distribution>

Fig. 5 is a view for explaining the relationship between the magnetic field and the intensity distribution of the plasma by taking each of the magnetic field generating portions 31 of Fig. 2 as an example. 5 shows an array in which a plurality of (four) inductively coupled antennas 41 and a plurality of (nine) magnetic field generating portions 31 shown in FIG. 2 are arranged in the array direction, that is, lead through an imaginary axis K. A cross-sectional view of the vertical plane (XZ plane) cut. Further, in Fig. 5, the intensity distribution of the plasma in the lower portion of the virtual axis K (Fig. 2) in the processing space V is represented by the respective positions on the virtual axis K and below the respective positions in the processing space V. The curves G1 and G2 of the relationship between the strengths of the partial plasmas are shown. The curve G1 is a curve in which the magnetic field generating unit 31 does not form a magnetic field in the processing space V, and the curve G2 is a curve in which a current is supplied to the coil 36 of the magnetic field generating unit 31 to generate a magnetic field in the processing space V as shown in FIG. The horizontal axis of each curve is the position of the virtual axis in the K direction, and the vertical axis is the intensity of the plasma. The scale of the imaginary axis in the K-direction of the cross-sectional view is the same as the scale of the horizontal axis of each curve.

As an example, when the interval between the inductive coupling type antennas 41 is optimized with respect to Ar of 10 Pa, and other conditions are, for example, when N _{2 of} 5 Pa is introduced into the processing space V, by arranging the plural numbers in one line The inductive coupling type antenna 41 and the plasma generated in the processing space V have a reduced intensity in a space between the inductive coupling type antennas 41 adjacent to each other as shown by a curve G1. The reason for this is that the spacing of the adjacent inductively coupled antennas 41 is wider under the process conditions. Further, on the outer side (+X side, and -X side) of the inductive coupling type antenna 41 at both ends (the end on the +X side and the end on the -X side) of the plurality of inductive coupling antennas 41 in the processing space V The plasma strength in the space is also reduced. In more detail, the plasma strength of the space is more greatly reduced than the plasma strength of the space between the adjacent inductively coupled antennas 41.

Further, as a result of the research, it was confirmed that, in particular, under high-pressure conditions, the plasma intensity between the adjacent inductively coupled antennas 41 has a flying up phenomenon contrary to the case of the curve G1. This phenomenon is a hindrance to high-precision film formation, but the phase of the high-frequency power is not changed between the adjacent inductive coupling antennas 41. Further, as a result of the experiment, the phenomenon in which the plasma intensity distribution fluctuates remarkably when the phase difference is 90° or 270° as compared with the case where the phase difference is 0° or 180°. It is speculated that this phenomenon is not caused by electromagnetic waves or magnetic fields, but by the behavior of the plasma itself.

As shown by the curve G1, when the coil 36 of each of the magnetic field generating units 31 is energized in a state where the plasma intensity distribution is not uniform, the magnetic field generating unit 31 generates a magnetic field, and the magnetic field propagates (enters) into the processing space V. By the generated magnetic field, the plasma of the processing space V is pulled, and as a result, the plasma strength in the space where the plasma strength is small before the magnetic field is generated becomes large. Thereby, as shown by the curve G2, the intensity distribution of the plasma of the processing space V is made uniform as compared with the case where the magnetic field is not formed. Further, since the top plate 11 of the chamber 1 is maintained at 80 ° C or lower by a cooling system (not shown), the respective magnetic field generating portions 31 do not become significantly high temperature without losing magnetic properties. Further, as the magnetic field generating portion 31, even if a permanent magnet is used, for example, by using a magnet that forms a magnetic field corresponding to the processing condition having the highest processing frequency, the plasma density can be made uniform, and thus the present invention is not impaired. The function. When an electromagnet is used as the magnetic field generating unit 31, when the process conditions are changed, the electromagnetics that are previously optimized and memorized in the control unit 8 in response to the processing conditions are called as compared with the case where the permanent magnets are used. The use of the control current value of iron can quickly and more uniformly adjust the plasma intensity distribution. In contrast, as the magnetic field generating portion 31, an electromagnet is more preferably used.

<4. Configuration of Magnetic Field Generating Unit 31>

As shown in FIG. 2, two inductive coupling antennas 41 are disposed at both end portions along the imaginary axis K among the four inductive coupling type antennas 41 arranged in a line in the chamber 1 along the imaginary axis K, along The magnetic field generating portion 31 is provided in each of the two portions of the imaginary axis K on the outer side. In other words, it is not in the opposite ends of the respective inductive coupling type antennas 41 The magnetic field generating portion 31 is provided on each of the adjacent end portions of the inductive coupling type antenna and the other end portion. Further, the magnetic field generating unit 31 generates a magnetic field in at least a part of the space in the processing space V. The at least one portion of the space is a space including one end portion of the both end portions of the at least one inductive coupling type antenna 41 disposed along the imaginary axis K and not adjacent to the other inductive coupling type antenna 41. The other end is the space on the opposite side. The space, that is, the portion on the outer side of the inductive coupling type antenna 41 at both ends of the plurality of inductive coupling type antennas 41 arranged along the virtual axis K in the processing space V is reduced in plasma strength as described above, but if it is in the top plate 11 When the magnetic field generating portion 31 is disposed on the upper surface side of the portion opposite to the portion to generate a magnetic field, the plasma strength of the portion can be increased to uniformize the plasma in the chamber 1. In the case where the inductive coupling type antenna 41 is arranged along the transport path L, the magnetic field generating unit 31 may be provided on the outer side of both ends of the inductive coupling antenna 41 along the virtual axis K.

Further, as shown in FIG. 2, between the both end portions of the respective inductive coupling type antennas 41 arranged along the virtual axis K, more precisely, between the opposite ends of the top plate 11 and the both end portions A portion of the upper surface is also provided with a magnetic field generating portion 31. When the inductive coupling type antenna 41 is one, the magnetic field generating unit 31 is also provided in the same manner. The magnetic field generating unit 31 generates a magnetic field in at least a part of the space of the processing space V. The at least one portion of the space includes a space of a space between both end portions of the at least one inductive coupling type antenna disposed along the imaginary axis K. For example, when the magnetic field generating unit 31 is provided on the outer side of both end portions of the inductive coupling type antenna 41, if the magnetic field generating unit 31 is provided between the both end portions, not only the both end portions of the processing space V but also On the outside, the space between the two can also draw the plasma, so that the plasma strength can be more uniform.

Further, as shown in FIG. 2, the magnetic field generating portion 31 may be provided between the inductive coupling type antennas 41 adjacent to each other among the plurality of inductive coupling type antennas 41 arranged along the virtual axis K. The magnetic field generating unit 31 generates a magnetic field in at least a part of the space in the processing space V. The at least one portion of the space includes a plurality of inductive coupling antennas 41 disposed along the imaginary axis K The space between the adjacent inductively coupled antennas 41 in the space. The space, that is, the plasma intensity of the portion of the processing space V corresponding to the portion between the adjacent inductive coupling type antennas 41 is greatly reduced, but if the magnetic field generating portion 31 is provided between the portions, It can enhance the strength of the plasma.

Furthermore, in the example of FIG. 2, the line segment L connecting the both end portions of the inductive coupling type antenna 41 is parallel to the imaginary axis K (that is, each of the plurality of inductive coupling type antennas 41 is parallel to the arrangement direction thereof. In the case of posture configuration, the line segment L and the imaginary axis K may not necessarily be parallel.

Fig. 6 is a view for explaining another example of the arrangement of the inductively coupled antenna and the magnetic field generating portion arranged along the imaginary axis. In the example of FIG. 6, each of the inductive coupling type antennas 41 is disposed such that the line segment L is inclined with respect to the virtual axis K. Thereby, the distance between the adjacent inductive coupling type antennas 41 is widened, and therefore, the magnetic field generating portion 31 having a larger diameter can be provided. Therefore, the plasma in the chamber 1 can be made more uniform.

Further, the angle formed by the line segment L and the virtual axis K may be 0 or more. For example, the line segment L and the imaginary axis K may also be orthogonal. In this case, each of the inductive coupling antennas 41 is disposed in a posture orthogonal to the arrangement direction thereof.

According to the plasma CVD apparatus of the present embodiment as described above, high-frequency power can be supplied to the inductively coupled antenna 41 provided in the chamber 1 for less than one turn, and the plasma potential can be generated at a high density. Since the plasma is transferred, the plasma can be transferred while the substrate 9 is being conveyed at a high speed. Therefore, for example, if the chamber 1 is connected to the vacuum-loading interlocking vacuum chamber and the unloading interlocking vacuum chamber via the gate at both ends of the transport path Y1, it is not necessary to make the chamber 1 atmosphere When the substrate 9 is carried in and out, the plurality of substrates 9 can be continuously and quickly subjected to a series of processes including the loading of the substrate 9, the processing using the plasma, and the carrying out. Thereby, the productivity of the plasma CVD apparatus can be increased.

Further, according to the plasma CVD apparatus of the present embodiment as described above, the inductive coupling antenna 41 disposed in the chamber 1 along the transport path Y1 is upstream of the transport path Y1. Each of the side and the downstream side is provided with a partition member 5 that partitions the processing space V in the chamber 1 into a space on the upstream side of the transport path Y1 and a space on the downstream side. The generated plasma is retained in a processing space defined by the partition member 5 defined by one of the upstream side and the downstream side of the inductive coupling type antenna 41, and the plasma density of the space becomes high. Therefore, the processing efficiency of the substrate using the plasma can be improved.

Further, according to the plasma CVD apparatus of the present embodiment as described above, the center point C of the line segment L connecting the both end portions of each of the plurality of inductive coupling type antennas 41 is arranged to cross the direction of the transport path Y1. On the imaginary axis K, a plurality of inductive coupling antennas 41 are arranged in a row along the virtual axis K. By superimposing the plasma generated by each of the inductive coupling type antennas 41, it is possible to generate a plasma having a long and high density in the direction of the imaginary axis K, and it is possible to improve the processing efficiency even for a substrate which is long in the direction of the imaginary axis K. .

Further, according to the plasma CVD apparatus of the present embodiment as described above, both end portions of each of the plurality of inductive coupling antennas 41 disposed along the virtual axis K are disposed on the virtual axis K. As a result, the distance between the adjacent inductive coupling antennas 41 is narrower than when the both end portions are not disposed on the virtual axis K. Therefore, the plasma is made higher in density by overlapping.

Further, according to the plasma CVD apparatus of the present embodiment as described above, at least one magnetic field generating unit 31 that generates a magnetic field in the processing space V in the chamber 1 is further provided. Since the plasma is pulled by the magnetic field, the plasma in the chamber 1 can be made uniform by providing the magnetic field generating portion 31 so that the magnetic field is generated in a portion where the plasma density in the processing space V is low. Thereby, for example, it is possible to improve the control of the film thickness of the film to be formed, and the like, and to improve the processing accuracy.

Further, according to the plasma CVD apparatus of the present embodiment as described above, the magnetic field generating unit that generates a magnetic field in at least a part of the processing space V in the chamber 1 is provided. The at least one portion of the space is a space that does not correspond to the other inductive coupling type antenna 41 in the two end portions of the at least one inductive coupling type antenna 41 arranged in a line in the chamber 1 along the imaginary axis K. One of the adjacent ends is the space on the opposite side from the other end. The space is electricity The space where the pulp strength is weak, but the plasma is pulled due to the magnetic field generated in the space, so that the plasma strength of the space can be increased to homogenize the plasma in the chamber 1. Moreover, under the process conditions that are different from the basic design of the inductive coupling type antenna, when the magnetic field control is not accompanied, the variation of the plasma intensity distribution of the space is also large, and it is difficult to be used for film formation uniformity. In the case of high processing, if accompanied by magnetic field control, the plasma intensity distribution can be uniformly corrected to achieve uniform film formation under various process conditions. Therefore, it is possible to form a large substrate by a smaller number of inductive coupling type antennas, and it is possible to promote the miniaturization of the plasma CVD apparatus or to save energy of a large-sized substrate with a small amount of electric power.

Further, according to the plasma CVD apparatus of the present embodiment as described above, the magnetic field generating unit that generates a magnetic field in at least a part of the processing space V in the chamber 1 is provided. The at least one portion of the space includes a space of a space between both ends of the inductively coupled antenna. Therefore, even when a magnetic field is formed in a space on the outer side of both end portions of the inductive coupling type antenna 41 in the processing space V, the magnetic field can be generated by the space between both end portions of the inductively coupled antenna. The plasma in the chamber 1 is homogenized.

Further, according to the plasma CVD apparatus of the present embodiment as described above, the magnetic field generating unit that generates a magnetic field in at least a part of the processing space V in the chamber 1 is provided. The at least one portion of the space includes a space between the adjacent ones of the plurality of inductively coupled antennas 41 arranged in a line in the chamber 1 along the imaginary axis K. This space is a space in which the strength of the plasma is weak, but since the space generates a magnetic field and draws the plasma, the plasma strength of the space can be increased to homogenize the plasma in the chamber 1. Further, when a magnetic field is formed in the space, the interval between the adjacent inductive coupling type antennas 41 can be set wider than in the case where the magnetic field is not formed. Therefore, a smaller number of inductive coupling type antennas 41 can be employed. It is useful for energy saving of the device.

Further, according to the plasma CVD apparatus of the present embodiment as described above, the magnetic field generating unit 31 is an electromagnet, and further includes a current supply unit 83 that supplies current to the coil of the magnetic field generating unit 31, and the control unit 8 It controls the current supplied from the current supply unit 83. borrow Thereby, the magnetic field can be adjusted according to the plasma strength at the place where the magnetic field generating portion 31 is provided, so that the plasma in the chamber 1 can be made more uniform. Further, even when the process conditions such as the gas type and the partial pressure are changed and the plasma intensity distribution is changed, the plasma can be pulled to an appropriate strength in a portion where the plasma intensity distribution is low by adjusting the magnetic field. Thereby, a uniform plasma intensity distribution can be achieved flexibly and rapidly for a variety of processes.

The present invention has been described in detail, but the above description is illustrative and not limiting in all aspects. Therefore, the present invention may be modified or omitted as appropriate within the scope of the invention.

1‧‧‧Processing chamber

2‧‧‧ Keeping the transport department

3‧‧‧ heating department

4‧‧‧The Plasma Generation Department

5‧‧‧Parts

6‧‧‧Gas Supply Department

7‧‧‧Exhaust Department

8‧‧‧Control Department

9‧‧‧Substrate

11‧‧‧ top board

21‧‧‧Transport roller

31‧‧‧Magnetic field generation department

41‧‧‧Inductively coupled antenna

42‧‧‧Protection tube

43‧‧‧matcher

44‧‧‧High frequency power supply

45‧‧‧High Frequency Power Supply Department

61‧‧‧Gas introduction department

62‧‧‧ gas introduction member

90‧‧‧ Carrier

100‧‧‧ Plasma CVD device

111‧‧‧lower surface

121‧‧‧ Move in

122‧‧‧Moving out

123‧‧‧ brake

124‧‧‧ brake

611‧‧‧ gas supply source

612‧‧‧Introduction piping

613‧‧‧Supply valve

V‧‧‧ processing space

Y1‧‧‧Transfer path

Claims (9)

A plasma CVD apparatus comprising: a chamber; a holding transport unit that holds a substrate to be processed in the chamber and relatively transports along a transport path; and at least one inductively coupled antenna that has a number of windings less than one week And a high frequency power supply unit that supplies high frequency power to the at least one inductive coupling antenna; and a gas introduction unit that introduces a predetermined gas into the chamber; And introducing the predetermined gas into the chamber from the gas introduction unit, and supplying the high-frequency power to the at least one inductive coupling antenna from the high-frequency power supply unit to generate plasma in a state where the plasma is generated. The transfer unit transports the substrate along the transport path. The plasma CVD apparatus according to claim 1, comprising at least one inductive coupling type antenna that is disposed in the chamber along the direction of the transport path and has a number of windings less than one week, and is opposite to The at least one inductive coupling type antenna includes a partition member that partitions a processing space in the chamber into a space on the upstream side of the transport path and a space on the downstream side on the upstream side and the downstream side of the transport path. The plasma CVD apparatus according to claim 1, comprising: a plurality of windings that are aligned with the transport path and that are arranged in a row along a predetermined virtual axis that intersects the direction of the transport path; Inductively coupled antennas, wherein the plurality of inductively coupled antennas are disposed by arranging a center point of a line segment connecting the two ends of each of the plurality of inductively coupled antennas on the virtual axis Arranged in a row along the above imaginary axis. The plasma CVD apparatus according to claim 3, wherein both ends of each of the plurality of inductive coupling type antennas disposed along the virtual axis are disposed on the virtual axis. The plasma CVD apparatus according to any one of claims 1 to 4, further comprising at least one magnetic field generating unit that generates a magnetic field in a processing space in the chamber. The plasma CVD apparatus according to claim 5, comprising: a predetermined number of windings that are aligned with the transport path and intersect with a predetermined imaginary axis that intersects the direction of the transport path, and the number of windings is less than one week An inductively coupled antenna, comprising: a magnetic field generating portion that generates a magnetic field in at least a portion of a processing space in the chamber, and the at least one portion of the space includes a pair of opposite ends of the at least one inductive coupling antenna A space that is not adjacent to one end of the other inductive coupling type antenna and is opposite to the other end portion. The plasma CVD apparatus according to claim 5, comprising at least one inductive coupling antenna having a number of windings disposed in the chamber opposite to the transport path, and having at least a part of a processing space in the chamber The space generates a magnetic field generating portion of the magnetic field, and the at least one portion of the space includes a space of a space between both end portions of the at least one inductively coupled antenna. The plasma CVD apparatus according to claim 5, comprising a plurality of windings that are aligned with the transport path and intersect with a predetermined virtual axis that intersects the direction of the transport path, and are arranged in a row in the chamber for less than one week. An inductively coupled antenna, and having at least a portion of a space in a processing space within the chamber to generate a magnetic field And a magnetic field generating portion, wherein the at least one portion of the space includes a space of a space between adjacent ones of the plurality of inductively coupled antennas. The plasma CVD apparatus according to claim 5, wherein the at least one magnetic field generating unit is an electromagnet, and the plasma CVD apparatus further includes: a current supply unit that supplies a current to the coil of the at least one magnetic field generating unit in a changeable manner; And a control unit that controls the current supplied by the current supply unit.