JP6309353B2 - Sputtering apparatus and sputtering method - Google Patents

Description

  The present invention relates to a sputtering apparatus and a sputtering method.

  A sputtering apparatus including a magnetron type rotating cathode whose outer peripheral surface is coated with a target material has been attracting attention because of its high film formation rate and significantly higher target usage efficiency than a conventional flat plate type magnetron sputtering apparatus.

  Patent Document 1 discloses a sputtering apparatus that includes a magnetron-type rotating cathode in a processing space, and forms a film on a substrate by reacting a reactive gas introduced into the processing space with a target material sputtered from the rotating cathode. It is disclosed.

  Patent Document 2 discloses a spiral antenna that includes a magnetron-type rotating cathode in a first processing space (deposition process region) and generates inductively coupled plasma in the second processing space from the outside of the second processing space (reaction process region). A sputtering apparatus comprising: The sputtering apparatus deposits a target material sputtered from a magnetron-type rotating cathode in the first processing space on the substrate, then transports the substrate to the second processing space, and generates inductively coupled plasma in the second processing space. Thus, the reactive gas and the target material on the substrate are reacted to form a reaction product film on the substrate.

Japanese Patent No. 3281371 JP 2008-69402 A

  As a technique for improving the film formation rate in the sputtering apparatuses of Patent Documents 1 and 2, it is conceivable to increase the target voltage (sputtering voltage) or target power (sputtering power) applied to the target. However, although the film formation rate is improved by raising the target voltage or the target power, there is a problem that damage induced by the increase of the target voltage or the target power reaches the film formation target substrate. On the other hand, when the target voltage is suppressed in order to suppress damage, there is a problem that the film formation rate is lowered.

  The present invention has been made to solve these problems, and an object of the present invention is to provide a sputtering apparatus and a sputtering method that can improve the film formation rate as a whole while suppressing damage to the substrate.

A sputtering apparatus according to a first aspect of the present invention is a sputtering apparatus that performs a film forming process on a main surface of a substrate, and supplies a sputtering gas to the processing space and a vacuum chamber that forms a processing space inside the sputtering apparatus. The substrate along a transfer path surface including a sputtering gas supply unit, at least one plasma processing unit disposed in the processing space, and at least one film formation location facing the at least one plasma processing unit. A transport mechanism for transporting a material, wherein the at least one plasma processing section has two rotating cathodes that are cylindrical and whose outer peripheral surfaces are coated with a target material, and are arranged opposite to each other with a certain distance in the processing space. A pair of cathodes, two first rotating parts for rotating the respective rotating cathodes around their respective central axes, and sputtering on the two rotating cathodes. A sputtering voltage supply means for applying a pressure, and each of the two rotary cathodes is housed in each of the two outer cathodes to form a magnetic field in the vicinity thereof, and the two rotary cathodes are independent of the two rotary cathodes. Two magnetic field forming portions provided rotatably around the central axis of the rotating cathode, and the two magnetic field forming portions are rotated around the central axis of the two rotating cathodes independently of the rotation of the two rotating cathodes. Two second rotating parts, a high-density plasma source that generates high-density plasma in a space including a portion of the processing space where the magnetic field is formed, and high-frequency power that supplies high-frequency power to the high-density plasma source Supply means, and at the start of the film forming process, the two magnetic field forming portions are arranged substantially opposite to each other, and the two second magnetic field forming units are disposed during the film forming process. A rotating unit rotates each of the two magnetic field forming units in a direction to approach the corresponding film forming location, and the two second rotating units move each of the two magnetic field forming units to the film forming location. After the rotation, the high-frequency power is supplied to the high-density plasma source by the high-frequency power supply means .

  A sputtering apparatus according to a second aspect of the present invention is the sputtering apparatus according to the first aspect, wherein the transport mechanism is capable of transporting the base material bidirectionally along the transport path surface. It is characterized by that.

A sputtering apparatus according to a third aspect of the present invention is the sputtering apparatus according to the second aspect of the present invention, wherein the at least one plasma processing unit includes a shutter disposed in the vicinity of the high-density plasma source. And a displacement mechanism that switches between a closed state in which the high-density plasma source is covered by the shutter and an open state in which the high-density plasma source communicates with the processing space by displacing the shutter. In the early stage of the film forming process, the closed state is set, while the high-frequency power supply means supplies the high-density plasma source with the high-frequency power, and the open state is set.

Sputtering apparatus according to a fourth aspect of the present invention, there is provided a sputtering apparatus according to any of the first aspect to the third aspect of the present invention, during the period in which the base material is not provided the deposition target locations The two second rotating parts rotate the two magnetic field forming parts.

Sputtering apparatus according to a fifth aspect of the present invention, first a sputtering apparatus according to any of embodiments to fourth aspect, the plurality of plasma processing unit and at least one plasma treatment unit of the present invention The at least one deposition location is a plurality of deposition locations, and the transport mechanism transports the substrate so that the substrate passes through one deposition location multiple times. It is a mechanism that repeats a reciprocating operation that reciprocates along a path surface and a feeding operation that conveys the base material to another deposition position adjacent to the downstream side of the one deposition position. From the upstream side of the transport to the downstream side of the transport, from the plasma processing unit in which the two magnetic field forming units are arranged substantially opposite to each other, the plasma processing unit in which the two magnetic field forming units are arranged closer to the corresponding film formation location And each plasma Wherein the arrangement of the magnetic field forming unit in the processing section is set.

A sputtering apparatus that performs a film forming process on a main surface of a substrate, and includes a vacuum chamber that forms a processing space therein, a sputtering gas supply unit that supplies a sputtering gas to the processing space, and a processing chamber. And at least one plasma processing unit, and a transport mechanism that transports the base material along a transport path surface including at least one deposition location facing the at least one plasma processing unit, and the at least one Each of the plasma processing units includes a cathode pair in which two rotating cathodes having a cylindrical shape and an outer peripheral surface coated with a target material are arranged to face each other at a predetermined distance in the processing space, and each rotating cathode is connected to each central axis. Two first rotating parts that rotate around, a sputtering voltage supply means that applies a sputtering voltage to the two rotating cathodes, and the two 2 which is housed in each of the rotating cathodes and forms a magnetic field in the vicinity of itself on the outer peripheral surface, and is provided so as to be rotatable about the central axis of the two rotating cathodes independently of the two rotating cathodes. Two magnetic field forming units, wherein the at least one plasma processing unit is a plurality of plasma processing units, and the at least one film forming part is a plurality of film forming parts, and the plurality of plasma processings The plasma processing unit on the most downstream side of the transport unit includes a high-density plasma source that generates high-density plasma in a space including the portion where the magnetic field is formed in the processing space, and high-frequency power to the high-density plasma source. and a high frequency power supplying means for supplying said transport mechanism is a mechanism for moving in one direction along the substrate into the transport path surface, transportable from the transport upstream side From the plasma processing unit in which the two magnetic field forming units are disposed substantially opposite to each other toward the downstream side, the plasma processing unit in which each of the two magnetic field forming units is disposed closer to the corresponding deposition position is provided in each plasma processing unit. The arrangement of each magnetic field forming unit is set prior to the film forming process, and at the start of the film forming process, the two magnetic field forming units are arranged substantially opposite to each other, and the most downstream plasma processing unit in forming the base material, it characterized that you supply a high frequency power to the high-density plasma source by the high-frequency power supply means.

A sputtering apparatus according to a seventh aspect of the present invention is the sputtering apparatus according to any one of the first to sixth aspects of the present invention, wherein the polarities of the two magnetic field forming portions are complementary. It is characterized by being.

A sputtering apparatus according to an eighth aspect of the present invention is the sputtering apparatus according to any one of the first to seventh aspects of the present invention, wherein the sputtering voltage supply means mutually connects the two rotating cathodes. A reverse phase AC sputtering voltage is applied.

A sputtering apparatus according to a ninth aspect of the present invention is the sputtering apparatus according to any one of the first to seventh aspects of the present invention, wherein the sputtering voltage supply means is negative on the two rotating cathodes. A voltage is applied.

A sputtering apparatus according to a tenth aspect of the present invention is the sputtering apparatus according to any one of the first to seventh aspects of the present invention, wherein the sputtering voltage supply means is negative on the two rotating cathodes. A pulsed voltage including a voltage and a positive voltage is applied.

A sputtering method according to an eleventh aspect of the present invention uses a device including a vacuum chamber for forming a processing space therein and at least one plasma processing unit disposed in the processing space. A sputtering method for performing a film forming process on a main surface, wherein the at least one plasma processing unit has a cylindrical shape and two rotating cathodes whose outer peripheral surfaces are coated with a target material at a certain distance in the processing space. a cathode pairs were opposed Te, and the interior of the two rotating cathodes with rotatably mounted respective central axis, the two magnetic field forming unit that forms a magnetic field in the vicinity of its one of the outer peripheral surface, wherein and a high-density plasma source for generating a high density plasma in a space including a portion where the magnetic field is formed within the processing space, the method comprising scan in the processing space A step of supplying a ter gas, a step of placing the two magnetic field forming portions substantially opposite to each other, a first rotation step of rotating the rotary cathodes around their central axes, and applying a sputtering voltage to the two rotary cathodes Each of the two magnetic field forming units, a step of bidirectionally moving the base material along a transfer path surface including at least one deposition position facing the at least one plasma processing unit, and A second rotating step of rotating the two magnetic field forming portions around their respective central axes in a direction approaching a corresponding deposition position; and a high frequency for supplying high-frequency power to the high-density plasma source after the second rotating step And a power supply step .

A sputtering method according to a twelfth aspect of the present invention is the sputtering method according to the eleventh aspect of the present invention, wherein the at least one plasma processing unit is disposed in the vicinity of the high-density plasma source, And the method displaces the shutter in a step prior to the high-frequency power supply step so that the high-density plasma source is covered by the shutter, and supplies the high-frequency power in the high-frequency power supply step. In some cases, the high-density plasma source includes a step of opening the high-density plasma source in communication with the processing space.

A sputtering method according to a thirteenth aspect of the present invention is the sputtering method according to any of the eleventh aspect to the twelfth aspect of the present invention, wherein the base material is not disposed at the deposition position. In addition, the second rotation step is performed.

A sputtering method according to a fourteenth aspect of the present invention uses an apparatus including a vacuum chamber for forming a processing space therein and a plurality of plasma processing units disposed in the processing space. A sputtering method for performing a film forming process on a main surface of a substrate transported along a transport path surface including a plurality of film forming locations facing a plasma processing unit, each plasma processing unit having a cylindrical shape A cathode pair in which two rotating cathodes whose outer peripheral surfaces are coated with a target material are arranged to face each other at a predetermined distance in the processing space, and the two rotating cathodes are provided so as to be rotatable around respective central axes. is, to generate a high density plasma in the space containing the two magnetic field forming unit that forms a magnetic field in the vicinity of its one of the outer peripheral surface, the portion where the magnetic field is formed within the processing space Comprising a high-density plasma source, wherein the method includes the step of supplying a sputtering gas into the processing space, toward the transport downstream from the transport upstream side, a plasma processing unit in which the two magnetic field forming portion is substantially opposed The step of setting the arrangement of each magnetic field forming unit in each plasma processing unit to the plasma processing unit in which the two magnetic field forming units are arranged close to the corresponding film-forming positions, and each rotating cathode at each center. A first rotation step of rotating around an axis, a reciprocating operation of reciprocating the base material along the transport path surface so that the base material passes through a deposition target position a plurality of times, A step of repeating the feeding operation of transporting the base material to another deposition target location adjacent to the deposition downstream side with respect to the deposition location, a step of applying a sputtering voltage to the two rotating cathodes, and 2 Magnetic field type A second rotation step of each part rotates corresponding the two toward the deposition target position a magnetic field forming portions on each of the central axis, high-frequency power to the high-density plasma source after the second rotation process And a high frequency power supply step for supplying the power .

A sputtering method according to a fifteenth aspect of the present invention uses an apparatus including a vacuum chamber that forms a processing space therein, and a plurality of plasma processing units disposed in the processing space. A sputtering method for performing a film forming process on a main surface of a substrate transported along a transport path surface including a plurality of film forming locations facing a plasma processing unit, each plasma processing unit having a cylindrical shape A cathode pair in which two rotating cathodes whose outer peripheral surfaces are coated with a target material are arranged to face each other at a predetermined distance in the processing space, and the two rotating cathodes are provided so as to be rotatable around respective central axes. provided, and a two magnetic field forming unit that forms a magnetic field in the vicinity of its one of the outer peripheral surface, the plasma processing unit of the most downstream side among the plurality of plasma processing unit, the processing space Among high-density plasma source for generating a high density plasma in a space including the portion where the magnetic field is formed, wherein the method includes the step of supplying a sputtering gas into the processing space, the transport downstream from the delivery upstream side From the plasma processing unit in which the two magnetic field forming units are arranged substantially opposite to the plasma processing unit in which the two magnetic field forming units are arranged so as to approach the corresponding deposition target positions, A step of setting the arrangement of the magnetic field forming unit, a first rotation step of rotating each rotary cathode around its central axis, a step of transferring the base material along the transfer path surface, and the two rotary cathodes comprising: the step of applying a sputtering voltage, and a high frequency power supply step of supplying a high frequency power to the high-density plasma source of the plasma processing unit of the most downstream To.

In the first aspect to the fifteenth aspect of the present invention, the two magnetic field forming units in the plasma processing unit are rotatably provided independently of the two rotating cathodes. For this reason, by adjusting the arrangement relationship between the two magnetic field forming units by the rotation of the two magnetic field forming units, the flight direction of ions and secondary electrons of the magnetron plasma formed in the processing space, in other words, to the base material The energy of the flying ions and secondary electrons can be adjusted. Thereby, the film-forming rate can be improved as a whole process, suppressing the damage to a base material.

In the sputtering apparatus according to any of the first aspect and the eleventh aspect of the present invention, the two magnetic field forming portions are arranged substantially opposite to each other at the start of the film forming process, and during the film forming process, The two second rotating parts rotate each of the two magnetic field forming parts in a direction approaching the corresponding film formation location. As a result, the film formation rate on the base material is relatively low and the damage to the base material is relatively small, so that the film formation rate on the base material is relatively high and the damage to the base material is relatively It shifts to a large film formation process step by step. As a result, it is possible to improve the film formation rate of the entire process while suppressing direct damage to the substrate to be processed.

In the sputtering apparatus according to the fourth aspect of the present invention, the two second rotating units rotate the two magnetic field forming units during a period in which the base material is not disposed at the deposition position. Thereby, it can prevent that the influence of the rotation operation | movement of two magnetic field formation parts arises in a part of thin film formed in the main surface of a base material, and the uniformity of a thin film is maintained.

In the sputtering apparatus according to the seventh aspect of the present invention, the polarities of the two magnetic field forming units are complementary. For this reason, a closed magnetic field is formed between the two magnetic field forming portions, and the magnetron plasma is easily confined in the magnetic field. As a result, it is easy to adjust the density of magnetron plasma formed in the processing space and the flight direction of ions and secondary electrons by adjusting the positional relationship between the two magnetic field forming units.

It is a cross-sectional schematic diagram which shows the structural example of the sputtering device concerning 1st Embodiment. It is a cross-sectional schematic diagram which shows the periphery of a plasma processing part. It is a side view which shows an inductive coupling antenna. It is a perspective view which shows the periphery of a plasma processing part. It is a cross-sectional schematic diagram which shows the periphery of a plasma processing part. It is a cross-sectional schematic diagram which shows the periphery of a plasma processing part. It is a cross-sectional schematic diagram which shows the periphery of a plasma processing part. It is a cross-sectional schematic diagram which shows the periphery of a plasma processing part. It is a cross-sectional schematic diagram which shows the periphery of a plasma processing part. It is a cross-sectional schematic diagram which shows the periphery of a plasma processing part. It is a cross-sectional schematic diagram which shows the periphery of the plasma processing part concerning 2nd Embodiment. It is a cross-sectional schematic diagram which shows the periphery of the plasma processing part concerning 3rd Embodiment. It is a cross-sectional schematic diagram which shows the periphery of the plasma processing part concerning 3rd Embodiment. It is a cross-sectional schematic diagram which shows the periphery of the plasma processing part concerning 3rd Embodiment. It is a cross-sectional schematic diagram which shows the periphery of the plasma processing part concerning a modification.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, parts having the same configuration and function are denoted by the same reference numerals, and redundant description is omitted in the following description. In addition, the following embodiment is an example which actualized this invention, and is not an example which limits the technical scope of this invention. In the drawings, the size and number of each part may be exaggerated or simplified for easy understanding. In each drawing, XYZ orthogonal coordinate axes are attached to describe directions. The + Z direction on the coordinate axes indicates a vertically upward direction, and the XY plane is a horizontal plane.

<1 First Embodiment>
<1.1 Overall Configuration of Sputtering Apparatus 1>
FIG. 1 is a schematic cross-sectional view schematically showing a schematic configuration of a sputtering apparatus 1 according to the first embodiment. The sputtering apparatus 1 is an apparatus that forms a thin film on an object to be coated (here, for example, the base material 91) by reactive sputtering. The base material 91 is composed of, for example, a silicon wafer.

  The sputtering apparatus 1 includes a chamber 100 (vacuum chamber), a plasma processing unit 50 disposed therein, a transport mechanism 30 that transports the base material 91, and a control unit 190 that performs overall control of each part of the sputtering apparatus 1. Prepare. The chamber 100 is a hollow member having a rectangular parallelepiped shape. The chamber 100 is disposed so that the upper surface of the bottom plate is in a horizontal posture. Each of the X axis and the Y axis is an axis parallel to the side wall of the chamber 100.

  The sputtering apparatus 1 further includes a chimney 60 that is a cylindrical shielding member disposed so as to surround the periphery of the plasma processing unit 50. The chimney 60 has a function as a shield that limits the plasma range generated by the plasma processing unit 50 and the scattering range of sputtered particles sputtered from the target, and an atmosphere maintaining function that blocks the atmosphere inside the chimney from the outside. The processing space V is a space that is partitioned by the chimney 60 and surrounds the plasma processing unit 50. Therefore, the chamber 100 has a processing space V inside.

  In the chamber 100, a horizontal transfer path surface L is defined above the chimney 60. The extending direction of the conveyance path surface L is the X-axis direction, and the base material 91 is conveyed along the X-axis direction.

  In addition, the sputtering apparatus 1 includes a plate-like temperature control unit 40 that heats or cools the base material 91 that is transported in the chamber 100. As an example, the temperature control unit 40 incorporates a heater such as a ceramic heater. As another example, the temperature control unit 40 includes a water-cooled jacket. The temperature adjustment unit 40 is disposed on the upper side of the conveyance path surface L, for example.

  A gate 160 for carrying the base material 91 into the chamber 100 is provided at the end of the transport path plane L on the −X side of the chamber 100. On the other hand, a gate 161 for carrying the base material 91 out of the chamber 100 is provided at the end of the transport path plane L on the + X side of the chamber 100. Moreover, the opening part of other chambers, such as a load lock chamber and an unload lock chamber, is connectable with the X direction both ends of the chamber 100 in the form which maintained airtight. Each of the gates 160 and 161 is configured to be openable and closable.

  In addition, a high vacuum exhaust system 170 is connected to the chamber 100 so that the internal space of the chamber 100 can be decompressed to a vacuum state. The high vacuum exhaust system 170 includes, for example, a vacuum pump (not shown), an exhaust pipe, and an exhaust valve. One end of the exhaust pipe is connected to the vacuum pump, and the other end is connected to the internal space of the chamber 100. Further, the exhaust valve is provided in the middle of the route of the exhaust pipe. Specifically, the exhaust valve is a valve that can automatically adjust the flow rate of the gas flowing through the exhaust pipe. In this configuration, when the exhaust valve is opened while the vacuum pump is operated, the internal space of the chamber 100 is exhausted. The high vacuum exhaust system 170 is controlled by the control unit 190 so as to keep the pressure in the processing space V at a predetermined process pressure.

  The transport mechanism 30 includes a pair of transport rollers 31 disposed facing each other across the transport path surface L in the Y direction inside the chamber 100, and a drive unit (not shown) that rotates them synchronously. Composed. A plurality of pairs of the conveyance rollers 31 are provided along the X direction which is the extending direction of the conveyance path surface L. In FIG. 1, two rollers positioned on the near side (−Y side) of the two pairs of transport rollers 31 are illustrated.

  The base material 91 is detachably held under the carrier 90 by a claw-like member (not shown) provided on the lower surface of the carrier 90. The carrier 90 is configured by a plate-like tray or the like. In addition to the aspect of this embodiment, various aspects can be adopted as the aspect of holding the base material 91 in the carrier 90. For example, the substrate 91 is held in a state where the lower surface of the substrate 91 can be formed by fitting the substrate 91 into the hollow portion of a plate-like tray having a hollow portion penetrating in the vertical direction. It doesn't matter.

  When the carrier 90 on which the base material 91 is disposed is introduced into the chamber 100 through the gate 160, each transport roller 31 comes into contact with the vicinity of the edge (± Y side edge) of the carrier 90 from below. . Then, the carrier 90 and the base material 91 held by the carrier 90 are transported along the transport path surface L by synchronously rotating the transport rollers 31 by a drive unit (not shown). In the present embodiment, each conveyance roller 31 is rotatable in both clockwise and counterclockwise directions, and the carrier 90 and the substrate 91 held by the carrier 90 are conveyed in both directions (± X directions). explain. The transfer path surface L includes a deposition position facing the plasma processing unit 50. For this reason, during the period in which the base material 91 transported by the transport mechanism 30 is disposed at the deposition location P, film formation processing is performed on the main surface of the base material 91 (FIGS. 5 and 8 to 10). During the period in which the base material 91 is not disposed at the deposition position P, the film forming process on the main surface of the base material 91 is not performed (FIGS. 6 and 7).

  The sputtering apparatus 1 also includes a sputtering gas supply unit 510 that supplies a sputtering gas such as argon gas or xenon gas, which is an inert gas, to the processing space V, and a reactive gas such as oxygen gas or nitrogen gas that is supplied to the processing space V. And a reactive gas supply unit 520 to be supplied. Thereby, a mixed atmosphere of the sputtering gas and the reactive gas of oxygen is formed in the processing space V.

  The sputtering apparatus 1 forms a film of a reaction product (compound) obtained by reacting a target material and a reactive gas on a substrate 91 by reactive sputtering. For example, when an ITO film is formed on the substrate 91 using ITO as the target 16 to be described later, oxygen gas is employed as the reactive gas. Even if the sputtering apparatus 1 does not include the reactive gas supply unit 520 and the target 16 is sputtered without supplying the reactive gas to the processing space V, a film of the target material is formed on the substrate 91. Good.

  Specifically, the sputter gas supply unit 510 includes, for example, a sputtering gas supply source 511 that is a supply source of a sputtering gas, and a pipe 512. One end of the pipe 512 is connected to the sputtering gas supply source 511, and the other end is connected to each nozzle 514 (see FIG. 2) communicating with the processing space V. Further, a valve 513 is provided in the course of the pipe 512. The valve 513 adjusts the amount of sputtering gas supplied to the processing space V under the control of the control unit 190. The valve 513 is preferably a valve that can automatically adjust the flow rate of the gas flowing through the pipe, and specifically includes, for example, a mass flow controller.

  Specifically, the reactive gas supply unit 520 includes, for example, a reactive gas supply source 521 that is a reactive gas supply source, and a pipe 522. One end of the pipe 522 is connected to the reactive gas supply source 521, the other end is branched into a plurality (six in the example of FIG. 4), and each branch end is a plurality of nozzles provided in the processing space V. 12 (in the example of FIG. 4, a total of six nozzles 12, three each on the upstream side and the downstream side). A valve 523 is provided in the middle of the route of the pipe 522. The valve 523 adjusts the amount of reactive gas supplied to the processing space V under the control of the control unit 190.

  Each nozzle 12 has a plate-like outer shape with a rectangular planar shape. Each nozzle 12 is provided in the processing space V so as to extend in a direction (Y direction) perpendicular to the transport path surface L in a horizontal plane on the base material 91 side with respect to the plasma processing unit 50. The other end of the pipe 522 is connected to one end face on the side wall side of the chimney 60 among both end faces in the width direction of the nozzles 12. The nozzle 12 is formed with a flow path that opens to the one end face and is connected to the other end of the pipe 522 and branches into a plurality of branch flow paths inside the nozzle 12. The tip of each branch channel reaches the other end surface of the nozzle 12 in the width direction and opens to form a plurality of discharge ports 11.

  An optical fiber probe 13 is provided below each nozzle 12 on the upstream side of the transport path surface L. In addition, each spectrometer 14 capable of measuring the spectral intensity of plasma emission incident on the probe 13 is provided. Each spectroscope 14 is electrically connected to the control unit 190, and the measurement value of the spectroscope 14 is supplied to the control unit 190. The control unit 190 controls the valve 523 by the plasma emission monitor (PEM) method based on the output of the spectroscope 14, thereby introducing the reactive gas introduced into the chamber 100 from the reactive gas supply unit 520. To control. The valve 523 is preferably a valve that can automatically adjust the flow rate of the gas flowing through the pipe. For example, the valve 523 preferably includes a mass flow controller.

  Each component included in the sputtering apparatus 1 is electrically connected to a control unit 190 included in the sputtering apparatus 1, and each component is controlled by the control unit 190. Specifically, the control unit 190 includes, for example, a CPU that performs various arithmetic processes, a ROM that stores programs, a RAM that serves as a work area for arithmetic processes, a hard disk that stores programs and various data files, a LAN, and the like. A data communication unit having a data communication function via a general FA computer is connected to each other by a bus line or the like. The control unit 190 is connected to an input unit composed of a display for performing various displays, a keyboard, a mouse, and the like. In the sputtering apparatus 1, a predetermined process is performed on the base material 91 under the control of the control unit 190.

<1.2 Plasma processing unit 50>
FIG. 2 is a schematic cross-sectional view showing the plasma processing unit 50 and its periphery. FIG. 3 is a side view showing an example of the inductively coupled antenna 151 (high density plasma source) of the plasma processing unit 50. FIG. 4 is a perspective view showing the plasma processing unit 50 and its periphery.

  The plasma processing unit 50 includes rotating cathodes 5 and 6, magnet units 21 and 22 (magnetic field forming units) housed inside the rotating cathodes 5 and 6, and each rotation driving unit 19 </ b> A that rotates the rotating cathodes 5 and 6. And each rotation drive unit 19B that rotates the magnet units 21 and 22 independently of the rotation of the rotary cathodes 5 and 6.

  The rotating cathodes 5 and 6 (cathode pair) are arranged to face each other with a certain distance in the X direction in the processing space V. Thus, if the rotary cathodes 5 and 6 are arranged side by side, radicals can be more concentrated in the film formation region on the base material 91 and the film formation rate can be further improved.

  Further, the plasma processing unit 50 supplies high-frequency power to the sputtering power source 163 (sputter voltage supply means) for applying a sputtering voltage to the rotating cathodes 5 and 6, a plurality of inductively coupled antennas 151, and each inductively coupled antenna 151. A high frequency power source 153 (high frequency power supply means) is further provided. Each base member 8 and magnet unit 21 (22) described later are also referred to as a magnetron cathode (cylindrical magnetron cathode).

The magnet unit 21 (22) forms a magnetic field (static magnetic field) in the vicinity of itself on the outer peripheral surface of the rotating cathode 5 (6). Each inductively coupled antenna 151 generates high-density plasma (inductively coupled plasma) in a space including a portion of the processing space V where a magnetic field is formed by the magnet unit 21 (22). This high-density plasma is a plasma having an electron spatial density of 3 × 10 10 atoms / cm ³ or more.

  The rotary cathode 5 (6) includes a cylindrical base member 8 that extends in the Y direction perpendicular to the transport direction in a horizontal plane, and a cylindrical target 16 that covers the outer periphery of the base member 8. ing. The base member 8 is a conductor. As a material used for the target 16, for example, ITO, aluminum, Si, or the like is employed. Note that the rotary cathode 5 (6) may be configured by the cylindrical target 16 without including the base member 8. The target 16 is formed by, for example, a technique of compressing and molding a target material powder into a cylindrical shape, and then inserting and brazing the base member 8.

  Both end portions in the direction of the central axis 2 (3) of each base member 8 are respectively closed by lid portions each having a circular opening at the center portion. The length of the rotating cathode 5 (6) in the direction of the central axis 2 (3) is set to 1,400 mm, for example, and the diameter is set to 150 mm, for example.

  The plasma processing unit 50 further includes two pairs of seal bearings 9 and 10 and two cylindrical support rods 7. Each pair of the seal bearings 9 and 10 is provided with the rotary cathode 5 (6) sandwiched in the longitudinal direction (Y direction) of the rotary cathode 5 (6). Each of the seal bearings 9 and 10 includes a base portion standing from the upper surface of the bottom plate of the chamber 100 and a substantially cylindrical cylindrical portion provided on the upper portion of the base portion.

  One end of each support bar 7 is supported by the cylindrical portion of the seal bearing 9, and the other end is supported by the cylindrical portion of the seal bearing 10. Each support bar 7 is inserted into the rotary cathode 5 (6) from the opening of the lid at one end of the base member 8, and passes through the rotary cathode 5 (6) along the central axis 2 (3). 8 is out of the rotating cathode 5 (6) through the opening of the lid at the other end.

  The magnet unit 21 (22) includes a yoke 25 (support plate) formed of a magnetic material such as permeable steel, and a plurality of magnets (a central magnet 23a and a peripheral magnet 23b described later) provided on the yoke 25. It is prepared for.

  The yoke 25 is a flat member and extends in the longitudinal direction (Y direction) of the rotary cathode 5 so as to face the inner peripheral surface of the rotary cathode 5 (6). A central magnet 23 a extending in the longitudinal direction of the yoke 25 is disposed on a center line along the longitudinal direction of the yoke 25 on the main surface (surface) of the yoke 25 facing the inner peripheral surface of the rotary cathodes 5 and 6. Has been. On the outer edge portion of the surface of the yoke 25, an annular (endless) peripheral magnet 23b surrounding the periphery of the central magnet 23a is further provided. The central magnet 23a and the peripheral magnet 23b are constituted by permanent magnets, for example.

  The polarities on the target 16 side of the central magnet 23a and the peripheral magnet 23b are different from each other. The polarities of the two magnet units 21 and 22 are configured to be complementary. For example, in the magnet unit 21, the polarity of the central magnet 23a on the target 16 side is N pole and the polarity of the peripheral magnet 23b is S pole, while in the magnet unit 22, the polarity of the central magnet 23a on the target 16 side is S pole. The polarity of the peripheral magnet 23b is the N pole.

  One end of the fixing member 27 is joined to the other main surface (back surface) of the yoke 25. The other end of the fixing member 27 is joined to the support bar 7. Thereby, the magnet units 21 and 22 are connected to the support rod 7.

  The rotary cathodes 5 and 6 are supported by the sealable bearings at the openings of the lid portions at both ends of the base member 8 so as to be rotatable about the central axes 2 and 3 common to the support rod 7. Thereby, the internal space of the rotary cathodes 5 and 6 and the processing space V are blocked from each other. The magnet units 21 and 22 are supported so as to be rotatable independently of the rotation of the rotary cathodes 5 and 6 around the central axes 2 and 3 common to the support rod 7.

  The base of each seal bearing 9 is provided with rotation drive units 19A and 19B including a motor and gears (not shown) for transmitting the rotation of the motor. In addition, gears (not shown) that mesh with the gears of the rotary drive portions 19A and 19B are provided around the opening of the lid portion of the base member 8 of the rotary cathodes 5 and 6 on the seal bearing 9 side (+ Y side). ing.

  Each rotation drive unit 19A (first rotation unit) rotates the rotating cathode 5 (6) about the central axis 2 (3) by the rotation of the motor. More specifically, the rotation drive unit 19A is arranged so that the portions of the outer peripheral surfaces of the rotary cathodes 5 and 6 facing each other move from the inductively coupled antenna 151 side toward the base material 91 side, respectively. The rotating cathodes 5 and 6 are rotated in opposite directions around the axes 2 and 3. The rotation speed is set to, for example, 10 to 20 rotations / minute, and the film is rotated at a constant speed in the above rotation speed and rotation direction during the film forming process. The rotary cathodes 5 and 6 are appropriately cooled by circulating cooling water through the seal bearing 10 and the support rod 7.

  Each rotation drive unit 19B (second rotation unit) rotates the magnet unit 21 (22) around the central axis 2 (3) by the rotation of the motor. More specifically, the rotation drive unit 19B rotates the magnet units 21 and 22 around the central axes 2 and 3 in opposite directions. The rotating operation of the magnet units 21 and 22 will be described in detail in <1.3 Film formation process> described later.

  The electric wires connected to the power supply 163 for the sputter are branched into two, introduced into the processing space V, and guided into the sealed bearings 10 of the rotary cathodes 5 and 6. At the tip of each branch electric wire, a brush that contacts the lid portion of the base member 8 of the rotary cathodes 5 and 6 on the seal bearing 10 side is provided. The power source 163 for sputter applies a sputtering voltage including a negative voltage to the base member 8 through this brush. For example, the sputtering power source 163 applies AC sputtering voltages having opposite phases to the rotating cathodes 5 and 6. In addition to this mode, a negative voltage may be applied as the sputtering voltage, or a pulsed voltage composed of a negative voltage and a positive voltage may be applied as the sputtering voltage. Absent. When a pulse voltage or an alternating voltage is applied as the sputtering voltage, reactive sputtering may be performed by alternately applying a sputtering voltage to the rotating cathodes 5 and 6 arranged in parallel. The sputter voltage is also referred to as a target voltage, a cathode applied voltage, or a bias voltage as another expression.

  When a sputtering voltage is applied to each base member 8 (and thus each target 16), a sputtering gas plasma (magnetron plasma) is applied to the surface of each target 16 in the processing space V by a static magnetic field formed by the magnet units 21 and 22. And a high-density sputtering gas plasma is confined between the rotating cathodes 5 and 6. The power source for sputtering 163 applies a sputtering voltage including a negative voltage to the target 16 so that magnetron plasma is generated in the processing space V by a static magnetic field formed by the magnetron cathode.

  The plurality of inductively coupled antennas 151 are arranged in a line along the longitudinal direction (Y direction) of the rotary cathodes 5 and 6 at intervals in the portion between the rotary cathodes 5 and 6 in the bottom plate of the chamber 100. Yes. In the example of FIG. 4, the case where the number of inductively coupled antennas 151 is five is described. However, the number is appropriately changed according to the length of the rotating cathode 5 (6) (for example, seven). )be able to.

  Each inductively coupled antenna 151 is covered with a dielectric protective member 152 made of quartz (quartz glass) or the like, and is provided through the bottom plate of the chamber 100. In addition, a pair of nozzles 514 for introducing the sputtering gas supplied from the sputtering gas supply source 511 into the processing space V is provided before and after each inductive coupling antenna 151 in the conveyance direction of the base material 91.

  More specifically, each inductive coupling antenna 151 is formed by bending a metal pipe-shaped conductor into a U shape, for example, as shown in FIG. And projecting into the processing space V through the bottom plate of the chamber 100. The inductively coupled antenna 151 is appropriately cooled, for example, by circulating cooling water therein. The inductive coupling antenna 151 is also referred to as LIA (Low Inductance Antenna: a registered trademark of EM Corporation).

  The rotating cathodes 5 and 6, the magnet units 21 and 22, and each part of each inductively coupled antenna 151 are arranged so that the magnetron plasma also acts in a range where the inductively coupled plasma acts. As a result, the magnetron plasma generated by the magnetron cathode and the inductively coupled plasma generated by the inductively coupled antenna 151 overlap each other in the same processing space V to form a mixed plasma. The high-density inductively coupled plasma generated by the inductively coupled antenna 151 also contributes to the sputtering of the target 16 together with the magnetic field formed by the magnet units 21 and 22 in the vicinity of the outer peripheral surfaces of the rotating cathodes 5 and 6.

  Thus, when the inductively coupled plasma contributes to sputtering, the magnitude of the sputtering power applied to the rotating cathode 5 (6) is larger than when the inductively coupled antenna 151 is not provided (when no inductively coupled plasma contributes). Even if they are the same, the sputtering voltage can be lowered (impedance can be lowered). Thereby, the damage which the target 16 receives can be reduced and the film can be formed at a high film formation rate.

  One end of each inductively coupled antenna 151 is electrically connected to a high frequency power source 153 via a matching circuit 154. The other end of each inductively coupled antenna 151 is grounded. The high frequency power supply 153 supplies high frequency power to each inductively coupled antenna 151 so that inductively coupled plasma is generated in the processing space V.

  In this configuration, when high frequency power (for example, 13.56 MHz high frequency power) is supplied from the high frequency power supply 153 to the inductive coupling antenna 151, a high frequency induction magnetic field is generated around the inductive coupling antenna 151, and the sputtering gas is generated in the processing space V. Inductively coupled plasma (ICP) of each of the gas and the reactive gas is generated. The generated inductively coupled plasma densifies the magnetron plasma. Further, the inductively coupled plasma promotes the decomposition of the reactive gas supplied in the vicinity of the base material 91. The inductively coupled plasma is also referred to as high frequency inductively coupled plasma.

  As described above, the inductively coupled antenna 151 has a U shape. Such a U-shaped inductively coupled antenna 151 corresponds to an inductively coupled antenna having less than one turn, and has a lower inductance than an inductively coupled antenna having one or more turns. For this reason, the high frequency voltage generated at both ends of the inductive coupling antenna 151 is reduced, and the high frequency fluctuation of the plasma potential accompanying the electrostatic coupling to the generated plasma is suppressed. For this reason, excessive electron loss accompanying the plasma potential fluctuation to the ground potential is reduced, and the plasma potential can be suppressed particularly low. Thereby, damage to the base material 91 can be reduced.

  A plate-like shutter 157 extending in the Y direction along the horizontal plane is provided in the vicinity of the top of each inductive coupling antenna 151 arranged along the Y direction. The shutter 157 is provided with a displacement mechanism (not shown) that displaces the shutter 157 along the X direction. For this reason, when the displacement mechanism displaces the shutter 157, the shutter 157 covers the upper part of each inductive coupling antenna 151, and the shutter 157 retracts from the upper part of each shutter 157 so that each inductive coupling antenna 151 is moved. Switching to the open state communicating with the processing space V is performed. The shutter 157 is mainly composed of stainless steel, for example.

  In the sputtering apparatus 1 described above, a sputtering gas and a reactive gas such as oxygen or nitrogen are introduced into the processing space V of the chamber 100 to cover the outer circumferences of the rotating cathodes 5 and 6, such as aluminum, ITO, and Si. The target 16 is sputtered, and a target material film, an oxide film, a nitride film, or the like is formed on the base material 91 facing the target 16.

<1.3 Film formation process>
Hereinafter, the film forming process in the present embodiment will be described with reference to FIGS. 5 to 10 are schematic cross-sectional views showing the plasma processing unit 50 and its periphery in the course of the film forming process. In FIGS. 5 to 10, unnecessary symbols are omitted in the description of the film forming process for the purpose of preventing the illustration from being complicated.

  First, the sputtering gas supply unit 510 supplies a sputtering gas such as argon gas or xenon gas, which is an inert gas, to the processing space V (supplying process). The reactive gas supply unit 520 supplies a reactive gas such as oxygen gas or nitrogen gas to the processing space V. Thereby, a mixed atmosphere of the sputtering gas and the reactive gas is formed in the processing space V.

  Each rotation drive unit 19B rotates the magnet unit 21 (22) around the central axis 2 (3) by the rotation of the motor. Then, the rotation is stopped at the timing when the magnet units 21 and 22 are arranged substantially opposite to each other.

  Each rotation drive unit 19A (first rotation unit) rotates the rotating cathode 5 (6) about the central axis 2 (3) by the rotation of the motor. More specifically, the rotation drive unit 19A is arranged so that the portions of the outer peripheral surfaces of the rotary cathodes 5 and 6 facing each other move from the inductively coupled antenna 151 side toward the base material 91 side, respectively. The rotary cathodes 5 and 6 are rotated in opposite directions around the axes 2 and 3 (first rotation step). This first rotation process is continued until the film forming process is completed.

  The power supply 163 for the sputter applies a sputtering voltage to the rotating cathodes 5 and 6. By applying a sputtering voltage to each base member 8 (and thus each target 16) of the rotating cathodes 5 and 6, an electric field for the magnetron plasma is generated between the rotating cathodes 5 and 6 and between them, and the sputtering gas plasma is generated. Generated.

  And the conveyance mechanism 30 conveys the base material 91 along the conveyance path | route surface L (conveyance process). More specifically, the transport mechanism 30 moves the base material 91 through the transport path surface L so that the base material 91 passes through the deposition target point P (a part of the transport path surface L facing the cathode pair) a plurality of times. Along the X direction. As a result, sputtered particles sputtered from the target 16 of the rotary cathodes 5 and 6 are deposited on the surface of the base material 91 (the main surface on the −Z side) (FIG. 5).

  As described above, the polarities of the two magnet units 21 and 22 are complementary. For this reason, in the embodiment of FIG. 5 in which the magnet units 21 and 22 are arranged substantially opposite to each other, the magnetron plasma is confined between the rotating cathodes 5 and 6 by the rotating cathodes 5 and 6 and a static magnetic field formed therebetween. As a result, in this aspect, a film formation process is realized in which the film formation rate is relatively low and plasma damage to the base material 91 is relatively small as compared with the aspects shown in FIGS.

  Then, when the film forming process in the mode shown in FIG. 5 is started and a certain period of time elapses, the rotation drive unit 19B rotates the magnet unit 21 (22) around the central axis 2 (3) by the rotation of the motor ( Second rotation step). The second rotation process may be configured by a single rotation operation or may be configured by a plurality of rotation operations. Below, the case where a 2nd rotation process is comprised by two rotation operation | movement is demonstrated.

  In the first rotation operation in the second rotation process, each of the magnet units 21 and 22 is rotated by a predetermined angle (for example, 20 degrees) in the + Z direction approaching the deposition position P. In particular, it is desirable that the rotation operation is performed during a period in which the base material 91 that is reciprocated along the transport path surface L is not disposed at the deposition position P (a period in which the base material 91 is retracted) (FIG. 6). , FIG. 7). Thereby, it can prevent that the influence of the said rotation operation arises in a part of thin film formed in the main surface of the base material 91, and the uniformity of a thin film is maintained. Further, it is desirable that the upper opening of the plasma processing unit 50 is closed by the lower surface of the carrier 90 even when the base material 91 is retracted (FIGS. 6 and 7). This stabilizes the plasma state in the processing space V compared to when the upper opening of the plasma processing unit 50 is opened.

  Even after the rotating operation, the reciprocating conveyance of the base material 91 and the sputter film formation are continued. As a result, sputtered particles sputtered from the target 16 of the rotary cathodes 5 and 6 are deposited on the surface of the base material 91 (the main surface on the −Z side) (FIG. 8).

  In the embodiment of FIG. 8, the magnetron plasma is confined slightly upward between the rotating cathodes 5 and 6 by the static magnetic field formed between the magnet units 21 and 22. As a result, in this aspect, the film formation rate is relatively high and the plasma damage to the base material 91 is relatively large as compared with the aspect shown in FIG. 5 described above, compared with the aspects shown in FIGS. Thus, a film forming process with a relatively low film forming rate and relatively small plasma damage to the substrate 91 is realized.

  Then, when the film formation process in the mode shown in FIG. 8 is started and a certain period of time elapses, the rotation drive unit 19B rotates the magnet unit 21 (22) around the central axis 2 (3) by the rotation of the motor ( Second rotation step). In the second rotation operation in the second rotation step, each of the magnet units 21 and 22 is rotated by a predetermined angle (for example, 25 degrees) in the + Z direction approaching the deposition position P. Also in this case, from the viewpoint of ensuring the uniformity of the thin film formed on the main surface of the base material 91, it is desirable that the rotation operation be performed during a period in which the base material 91 is not disposed at the deposition position P.

  Even after the second rotation operation in the second rotation step, the reciprocating conveyance of the base material 91 and the sputter film formation are continued. As a result, sputtered particles sputtered from the target 16 of the rotary cathodes 5 and 6 are deposited on the surface of the base material 91 (the main surface on the −Z side) (FIG. 9).

  In the embodiment of FIG. 9, the magnetron plasma is confined above the rotating cathodes 5 and 6 by a static magnetic field formed between the magnet units 21 and 22. As a result, in this aspect, the film formation rate is relatively high and the plasma damage to the base material 91 is relatively large compared to the aspects shown in FIGS. Thus, a film forming process with a relatively low film forming rate and relatively small plasma damage to the substrate 91 is realized.

  As shown in FIGS. 5 to 9, in the early stage of the film forming process, the shutter 157 is in a closed state in which the upper part of each inductive coupling antenna 151 is covered. Therefore, in the course of the film forming process shown in FIGS. 5 to 9, it is effectively prevented that the sputter film formation is performed on each inductive coupling antenna 151 and the plasma generation performance in each inductive coupling antenna 151 is deteriorated.

  Then, when a certain period of time has elapsed since the film forming process in the mode shown in FIG. 9 is started, a displacement mechanism (not shown) displaces the shutter 157 to switch from the closed state to the open state. Further, the high frequency power supply 153 supplies high frequency power to each inductively coupled antenna 151 in the open state (high frequency power supply step). Also at this time, the reciprocating conveyance of the base material 91 and the sputter film formation are continued. As a result, sputtered particles sputtered from the target 16 of the rotating cathodes 5 and 6 are deposited on the surface of the base material 91 (the main surface on the −Z side) (FIG. 10).

  In the embodiment of FIG. 10, the magnetron plasma is confined above the rotating cathodes 5 and 6 by a static magnetic field formed between the magnet units 21 and 22. In the processing space V, a mixed plasma atmosphere of magnetron plasma and inductively coupled plasma is formed. As a result, in this aspect, a film forming process is realized in which the film forming rate is relatively high and the plasma damage to the base material 91 is relatively large as compared with the aspects shown in FIGS. 5, 8, and 9. .

  As described above, in the present embodiment, the film formation rate on the base material 91 is reduced from the film formation process in which the film formation rate on the base material 91 is relatively low and the plasma damage to the base material 91 is relatively small. The process proceeds in stages to a film forming process that is relatively high and plasma damage to the substrate 91 is relatively large. For this reason, it is possible to improve the film formation rate of the entire process while suppressing direct plasma damage to the base material 91 to be processed (in other words, plasma damage that may occur in the early stage of the film formation process).

  In the present embodiment, the stage transition of the film forming process described above is realized by the one plasma processing unit 50 rotating the rotating cathodes 5 and 6 during the film forming process. For this reason, in the aspect of this embodiment, size reduction of the sputtering apparatus 1 is realizable compared with the aspect provided with the some plasma processing part 50 like 2nd Embodiment and 3rd Embodiment mentioned later.

<2 Second Embodiment>
Next, a second embodiment of the present invention will be described.

<2.1 Configuration of Sputtering Apparatus 1A>
FIG. 11 is a schematic cross-sectional view showing the plasma processing unit and its periphery in the sputtering apparatus 1A of the second embodiment. Hereinafter, the sputtering apparatus 1A according to the second embodiment will be described with reference to FIG. 11. However, the same elements as those in the first embodiment are denoted by the same reference numerals, and redundant description will be omitted. In FIG. 11, for the purpose of preventing the illustration from being complicated, a part of the configuration such as the nozzle 12, the probe 13, and the nozzle 514 is omitted.

  The sputtering apparatus 1 </ b> A has four plasma processing units along the conveyance direction of the base material 91. Hereinafter, when the four plasma processing units are expressed without distinction, they are referred to as “plasma processing unit 50A”. When the four plasma processing units are expressed separately, they are called “plasma processing units 501A to 504A” in order from the upstream side (+ X side) along the transport direction (−X direction).

  Each plasma processing unit 50A is different from the plasma processing unit 50 of the first embodiment in common in that each plasma processing unit 50A is not provided with a rotation drive unit 19B. For this reason, each magnet unit 21 and 22 provided in each plasma processing part 50A is not rotated during the film-forming process.

  Therefore, the positioning of the magnet units 21 and 22 in each plasma processing unit 50A is performed by the operator of the apparatus before the film forming process is started. At this time, in the plasma processing unit 501A, the magnet units 21 and 22 are disposed substantially opposite to each other. In the plasma processing unit 502A, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 20 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. In the plasma processing unit 503A, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 45 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. In the plasma processing unit 504A, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 45 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement.

  The plasma processing units 501A to 503A are provided with a shutter 157 and a displacement mechanism (not shown) for displacing the shutter 157. For this reason, it is possible to switch each inductive coupling antenna 151 between an open state and a closed state according to the processing conditions of the film forming process. On the other hand, the plasma processing unit 504A is not provided with a shutter 157 and a displacement mechanism (not shown) for displacing the shutter 157, and the inductively coupled antenna 151 is always open.

  Around the plasma processing units 501A to 503A, a chimney 601A, which is a shielding member arranged so as to surround the periphery, is provided. Further, around the plasma processing unit 504A, a chimney 602A, which is a shielding member disposed so as to surround the periphery, is provided. In general, in the case where the inductively coupled plasma is generated by the inductively coupled antenna 151 and in the case where the inductively coupled plasma is not generated, the atmosphere to be formed in the processing space V (in other words, the amount of sputtering gas to be supplied to the processing space V and the amount of reactive gas) Amount) is different. For this reason, as in this embodiment, a space for switching the opening and closing of each inductive coupling antenna 151 (a space where the plasma processing units 501A to 503A are arranged) and a space where the open state of each inductive coupling antenna 151 is maintained ( By separating the plasma processing section 504A) from the chimneys 601A and 602A, it becomes easy to form a desired atmosphere in each processing space V. Further, as a mode different from the second embodiment, four chimneys (shielding members) may be provided so as to individually surround the periphery of the four plasma processing units 501A to 504A.

  The transport mechanism 30 </ b> A is a mechanism that holds and transports the base material 91 by the carrier 90, similarly to the transport mechanism 30 of the first embodiment. The transport mechanism 30A is a mechanism that transports the carrier 90 and the base material 91 only in one direction (−X direction), and is different from the transport mechanism 30 of the first embodiment in this respect. In addition, since the transfer path surface L in the second embodiment includes four film formation locations P facing the four plasma processing units 50A, this is different from the first embodiment. Below, the case where the conveyance mechanism 30A conveys the four base materials 91 by the four carriers 90 will be described.

  Other parts constituting the sputtering apparatus 1A are the same as those constituting the sputtering apparatus 1 of the first embodiment.

<2.2 Film formation process>
Hereinafter, the film forming process in the second embodiment will be described.

  As described above, the positioning of the magnet units 21 and 22 in each plasma processing unit 50A is performed by the operator of the apparatus before the start of the film forming process.

  A sputtering gas supply unit (not shown) supplies a sputtering gas such as argon gas or xenon gas, which is an inert gas, to the processing space V (supply process). Further, the reactive gas supply unit supplies a reactive gas such as oxygen gas or nitrogen gas to the processing space V. Thereby, a mixed atmosphere of the sputtering gas and the reactive gas is formed in the processing space V.

  Each rotation drive unit 19A rotates each rotary cathode 5 and 6 about each center axis 2 and 3 by rotation of the motor. More specifically, the rotation drive unit 19A is arranged so that the portions of the outer peripheral surfaces of the rotary cathodes 5 and 6 facing each other move from the inductively coupled antenna 151 side toward the base material 91 side, respectively. The rotary cathodes 5 and 6 are rotated in opposite directions around the axes 2 and 3 (first rotation step). This first rotation process is continued until the film forming process is completed.

  The power supply for the sputter applies a sputtering voltage to the rotating cathodes 5 and 6. When a sputtering voltage is applied to each base member 8 (and thus each target 16) of each rotary cathode 5, 6, an electric field for magnetron plasma is generated, and plasma of a sputtering gas is generated.

  Then, the transport mechanism 30A transports the four base materials 91 along the transport path surface L (transport process). More specifically, the transport mechanism 30A moves each base material 91 held by each carrier 90 along the transport path surface L in the −X direction. As a result, sputtered particles sputtered from the targets 16 of the rotary cathodes 5 and 6 are deposited on the surface of the base material 91 (the main surface on the −Z side) (FIG. 11).

  First, a plasma film is formed on the surface of the substrate 91 by the plasma processing unit 501A on the most upstream side (+ X side). As described above, in the plasma processing unit 501A, the magnet units 21 and 22 are arranged substantially opposite to each other. For this reason, in the plasma processing unit 501A, a film forming process in which the film forming rate is relatively low and the plasma damage to the substrate 91 is relatively small compared to the film forming process in the plasma processing units 502A to 504A is realized. .

  When the base material 91 is conveyed in the −X direction, a plasma film is formed on the surface of the base material 91 by the plasma processing unit 502A. As described above, in the plasma processing unit 502A, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 20 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. Therefore, in the plasma processing unit 502A, the film forming rate is relatively high and the plasma damage to the base material 91 is relatively large as compared with the film forming process in the plasma processing unit 501A, and the plasma processing units 503A and 504A Compared with the film forming process, the film forming rate is relatively low, and the film forming process with relatively little plasma damage to the substrate 91 is realized.

  When the base material 91 is conveyed in the −X direction, a plasma film is formed on the surface of the base material 91 by the plasma processing unit 503A. As described above, in the plasma processing unit 503A, the magnet units 21 and 22 are rotated by a predetermined angle (for example, 45 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. For this reason, in the plasma processing unit 503A, the film forming rate is relatively high and the plasma damage to the base material 91 is relatively large compared to the film forming processing in the plasma processing units 501A and 502A. Compared with the film forming process, the film forming rate is relatively low, and the film forming process with relatively little plasma damage to the substrate 91 is realized.

  By transporting the base material 91 in the −X direction, plasma film formation is finally performed on the surface of the base material 91 by the plasma processing unit 504A. As described above, in the plasma processing unit 504A, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 45 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. In the processing space V, a mixed plasma atmosphere of magnetron plasma and inductively coupled plasma is formed. For this reason, in the plasma processing unit 504A, a film forming process having a relatively high film forming rate and relatively large plasma damage to the base material 91 is realized as compared with the film forming processes in the plasma processing units 501A to 503A. .

  As described above, in the second embodiment, each magnet unit 21, 22 is configured to correspond to each of the magnet units 21, 22 from the plasma processing unit 501A in which the magnet units 21, 22 are substantially opposed to each other from the transport upstream side to the transport downstream side. The arrangement of the magnet units 21 and 22 in each of the plasma processing units 501A to 504A is set to the plasma processing unit 504A that is arranged close to the film location P.

  For this reason, also in the second embodiment, as in the first embodiment, the base material 91 is subjected to a film forming process in which the film forming rate on the base material 91 is relatively low and the plasma damage to the base material 91 is relatively small. The process proceeds in stages to a film forming process in which the film forming rate is relatively high and plasma damage to the substrate 91 is relatively large. For this reason, it is possible to improve the film formation rate of the entire process while suppressing direct plasma damage to the base material 91 to be processed (in other words, plasma damage that may occur in the early stage of the film formation process).

  In the second embodiment, the film forming process described above is performed while continuously transporting the plurality of base materials 91 with the transport direction as one direction. For this reason, in the aspect of 2nd Embodiment, the throughput of the whole apparatus can be improved.

<3 Third Embodiment>
Next, a third embodiment of the present invention will be described.

<3.1 Configuration of Sputtering Apparatus 1B>
12 to 14 are schematic cross-sectional views showing the plasma processing unit and its periphery in the course of film formation. Hereinafter, the sputtering apparatus 1B according to the third embodiment will be described with reference to FIGS. 12 to 14. However, the same elements as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted. In FIGS. 12 to 14, some components such as the nozzle 12, the probe 13, and the nozzle 514 are omitted for the purpose of preventing the illustration from being complicated.

  The sputtering apparatus 1 </ b> B has four plasma processing units along the conveyance direction of the base material 91. Hereinafter, when the four plasma processing units are expressed without distinction, they are referred to as “plasma processing unit 50B”. When the four plasma processing units are expressed separately, they are called “plasma processing units 501B to 504B” in order from the upstream side (+ X side) along the transport direction (−X direction).

  The plasma processing units 501B to 503B do not have each unit (inductive coupling antenna 151 and the like) for generating inductively coupled plasma, and are different from the plasma processing unit 50 of the first embodiment in this respect. The plasma processing unit 504B includes each unit (inductive coupling antenna 151 and the like) for generating inductively coupled plasma, but does not include a shutter 157 and a displacement mechanism (not shown) that displaces the shutter 157. This is different from the plasma processing unit 50 of the first embodiment.

  Around each plasma processing unit 50B, a chimney 60, which is a shielding member disposed so as to surround the periphery, is provided.

  The transport mechanism 30 </ b> B is a mechanism that holds and transports the base material 91 by the carrier 90 similarly to the transport mechanism 30 of the first embodiment, and is a mechanism that can transport the carrier 90 and the base material 91 in both directions.

  Other parts constituting the sputtering apparatus 1B are the same as those constituting the sputtering apparatus 1 of the first embodiment.

<3.2 Film formation process>
Hereinafter, the film forming process in the third embodiment will be described.

  First, prior to the start of the film forming process, the magnet units 21 and 22 are positioned in each plasma processing unit 50. At this time, in the plasma processing unit 501B, the magnet units 21 and 22 are arranged to be rotated by a predetermined angle (for example, 20 degrees) in the −Z direction away from the deposition position P from the substantially opposed arrangement. In the plasma processing unit 502B, the magnet units 21 and 22 are disposed substantially opposite to each other. In the plasma processing unit 503B, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 20 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. In the plasma processing unit 504B, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 45 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement.

  A sputter gas supply unit supplies a sputtering gas such as argon gas or xenon gas, which is an inert gas, to the processing space V (supply process). Further, the reactive gas supply unit supplies a reactive gas such as oxygen gas or nitrogen gas to the processing space V. Thereby, a mixed atmosphere of the sputtering gas and the reactive gas is formed in the processing space V.

  Each rotation drive unit 19A rotates each rotary cathode 5 and 6 about each center axis 2 and 3 by rotation of the motor. More specifically, the rotation drive unit 19A is arranged so that the portions of the outer peripheral surfaces of the rotary cathodes 5 and 6 facing each other move from the inductively coupled antenna 151 side toward the base material 91 side, respectively. The rotary cathodes 5 and 6 are rotated in opposite directions around the axes 2 and 3 (first rotation step). This first rotation process is continued until the film forming process is completed.

  The power supply for the sputter applies a sputtering voltage to the rotating cathodes 5 and 6. When a sputtering voltage is applied to each base member 8 (and thus each target 16) of each rotary cathode 5, 6, an electric field for magnetron plasma is generated, and plasma of a sputtering gas is generated.

  And the conveyance mechanism 30B conveys the base material 91 along the conveyance path | route surface L (conveyance process). More specifically, the transport mechanism 30B includes a reciprocating operation in which the base material 91 is reciprocated along the transport path surface L so that the base material 91 passes through one deposition target position P a plurality of times. And the feeding operation of transporting the base material 91 to another deposition position P adjacent to the downstream side of the deposition position P.

  The transport mechanism 30 </ b> B first performs the reciprocating operation at a timing when the base material 91 held by the carrier 90 reaches the film formation location P on the most upstream side (+ X side).

  As a result, first, plasma film formation is performed on the surface of the base material 91 by the plasma processing unit 501B on the most upstream side (+ X side). Then, when the film forming process in the mode shown in FIG. 12 is started and a certain period of time elapses, the rotation drive unit 19B rotates the magnet units 21 and 22 in each plasma processing unit 50B by the rotation of the motor. In this rotation operation, each of the magnet units 21 and 22 in each plasma processing unit 50B is rotated by a predetermined angle in the + Z direction approaching the deposition position P (FIG. 13).

  By this rotation, the magnet units 21 and 22 are arranged substantially opposite to each other in the plasma processing unit 501B. In the plasma processing unit 502B, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 20 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. In the plasma processing unit 503B, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 45 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. In the plasma processing unit 504B, the magnet units 21 and 22 are arranged so as to be rotated by a predetermined angle (for example, 90 degrees) in the + Z direction approaching the deposition position P from a substantially opposed arrangement. Even after the rotating operation, the reciprocating operation of the substrate 91 by the transport mechanism 30B and the sputter film formation by the plasma processing unit 501B are continued.

  Therefore, in the plasma processing unit 501B, the plasma processing unit 50 according to the first embodiment has the mode shown in FIG. 12 (corresponding to the mode shown in FIG. 5) and the mode shown in FIG. 13 (corresponding to the mode shown in FIG. 8). A film forming process is realized.

  Then, after a certain period of time has elapsed since the film forming process in the mode shown in FIG. 13 is started, the transport mechanism 30B moves to another film forming position P adjacent to the one film forming position P on the transport downstream side. The feeding operation for transporting the base material 91 is performed. As a result, the base material 91 positioned at the deposition position P of the plasma processing unit 501B immediately before the feeding operation is transported to the deposition position P of the plasma processing unit 502B. Further, the base material 91 subsequent to the base material 91 is transported to the deposition position P of the plasma processing unit 501B. In FIG. 14 described later, for the purpose of distinguishing the preceding base material and the subsequent base material, the preceding base material is illustrated as 91a and the subsequent base material is illustrated as 91b.

  Further, during this feeding operation, the magnet units 21 and 22 are rotated in the opposite direction by the same rotation amount as the above rotation operation (FIG. 14). Therefore, the arrangement of the magnet units 21 and 22 in FIG. 14 is the same as the arrangement of the magnet units 21 and 22 in FIG.

  Thereafter, the transport mechanism 30B repeats the reciprocating operation and the feeding operation. Then, each rotation drive unit 19B rotates the magnet units 21 and 22 in the reciprocating process to change the arrangement shown in FIG. 12 to the arrangement shown in FIG. By reversely rotating 22, the arrangement shown in FIG. 13 is changed to the arrangement shown in FIG. 14 (FIG. 12).

  Thereby, the film forming process in the plasma processing units 501B to 504B is sequentially executed for each base material 91. Further, from the upstream side of the transfer to the downstream side of the transfer, the plasma is arranged such that each magnet unit 21, 22 approaches the corresponding film-forming position P from the plasma processing unit 501 </ b> B in which the magnet units 21, 22 are substantially opposed to each other. The arrangement of the magnet units 21 and 22 in the plasma processing units 501B to 504B is set in the processing unit 504B (FIGS. 12 to 14).

  For this reason, also in the third embodiment, as in the first embodiment, the film formation rate on the substrate 91 is relatively low and the plasma damage to the substrate 91 is relatively small. The process proceeds in stages to a film forming process in which the film forming rate is relatively high and plasma damage to the substrate 91 is relatively large. For this reason, it is possible to improve the film formation rate of the entire process while suppressing direct plasma damage to the base material 91 to be processed (in other words, plasma damage that may occur in the early stage of the film formation process).

  In the third embodiment, the above-described film forming process is performed while continuously transporting the plurality of base materials 91 by repeating the reciprocating operation and the feeding operation by the transport mechanism 30. For this reason, in the aspect of 3rd Embodiment, the throughput of the whole apparatus can be improved.

<4 Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention.

  FIG. 15 is a schematic cross-sectional view showing the plasma processing unit 50C and its periphery of the sputtering apparatus 1C. The sputtering apparatus 1C is an apparatus according to a modification of the sputtering apparatus 1 of the first embodiment.

  As shown in FIG. 15, two plasma processing units 50 </ b> C may be arranged in one chimney 60. Even in this case, the film formation rate on the base material 91 is relatively high since the film formation rate on the base material 91 is relatively low and the plasma damage to the base material 91 is relatively small. If the structure is such that the film processing is relatively shifted to the film forming process with relatively large plasma damage to 91, direct plasma damage to the base material 91 to be processed (in other words, occurs in the early stage of the film forming process). Film formation rate as a whole process can be improved while suppressing plasma damage).

  For example, when the rotation of the magnet units 21 and 22 in the two plasma processing units 50C is performed synchronously in the sputtering apparatus 1C, the arrangement of the magnet units 21 and 22 is arranged upward from the opposed arrangement (the arrangement close to the deposition position P). The film formation process described above can be realized by gradually shifting to (). On the other hand, in the sputtering apparatus 1C, the magnet units 21 and 22 in the two plasma processing units 50C may be rotated individually. In this case, the arrangement of the magnet units 21 and 22 in the plasma processing unit 50C arranged on the downstream side of the transfer is arranged upward from the arrangement of the magnet units 21 and 22 in the plasma processing unit 50C arranged on the upstream side of the transfer. By doing so, the film forming process described above can be realized.

  Each of the film forming processes described above can be applied to various film forming processes such as a cathode electrode film forming on an organic EL and a solar cell semiconductor passivation film forming.

  As mentioned above, although the sputtering apparatus and sputtering method which concern on embodiment and its modification were demonstrated, these are examples of preferable embodiment for this invention, Comprising: The scope of implementation of this invention is not limited. Within the scope of the invention, the present invention can be freely combined with each embodiment, modified with any component in each embodiment, or omitted with any component in each embodiment.

1, 1A to 1C Sputtering apparatus 50, 50A to 50C, 501A to 504A, 501B to 504B Plasma processing unit 100 Chamber 151 Inductive coupling antenna 153 High frequency power supply 163 Power supply for sputter 30 Transport mechanism 31 Transport roller 5, 6 Rotating cathode 7 Support rod 8 Base member 16 Target 19A, 19B Rotation drive unit 21, 22 Magnet unit 60 Chimney 90 Carrier 91 Base material 510 Sputter gas supply unit 520 Reactive gas supply unit V Processing space

Claims (15)

A sputtering apparatus for performing a film forming process on a main surface of a substrate,
A vacuum chamber for forming a processing space therein;
A sputtering gas supply unit for supplying a sputtering gas to the processing space;
At least one plasma processing unit disposed in the processing space;
A transport mechanism for transporting the base material along a transport path surface including at least one deposition position facing the at least one plasma processing unit;
Prepared,
The at least one plasma processing unit includes:
A cathode pair in which two rotating cathodes, which are cylindrical and whose outer peripheral surfaces are coated with a target material, are arranged to face each other at a predetermined distance in the processing space;
Two first rotating parts for rotating each rotating cathode around a respective central axis;
Sputtering voltage supply means for applying a sputtering voltage to the two rotating cathodes;
Each of the two rotating cathodes is housed inside and forms a magnetic field in the vicinity of itself on the outer peripheral surface, and can rotate about the central axis of the two rotating cathodes independently of the two rotating cathodes. Two magnetic field forming portions provided;
Two second rotating parts for rotating the two magnetic field forming parts around the central axis of the two rotating cathodes independently of the rotation of the two rotating cathodes;
A high-density plasma source for generating high-density plasma in a space including a portion where the magnetic field is formed in the processing space;
High-frequency power supply means for supplying high-frequency power to the high-density plasma source;
With
At the start of the film formation process, the two magnetic field forming portions are arranged substantially opposite to each other,
During the film forming process, the two second rotating units rotate each of the two magnetic field forming units in a direction approaching a corresponding film forming position,
Supplying the high-frequency power to the high-density plasma source by the high-frequency power supply means after the two second rotating portions rotate each of the two magnetic field forming portions in a direction approaching the film formation location. A sputtering apparatus characterized. The sputtering apparatus according to claim 1,
The sputtering apparatus, wherein the transport mechanism can transport the base material bidirectionally along the transport path surface. The sputtering apparatus according to claim 2 ,
The at least one plasma processing unit includes:
A shutter disposed in the vicinity of the high-density plasma source;
A displacement mechanism that displaces the shutter to switch between a closed state in which the high-density plasma source is covered by the shutter and an open state in which the high-density plasma source communicates with the processing space;
Have
The sputtering apparatus is characterized in that it is in the closed state in the early stage of the film forming process, and is in the open state when high-frequency power is supplied to the high-density plasma source by the high-frequency power supply means. A sputtering apparatus according to any one of claims 1 to 3,
The sputtering apparatus, wherein the two second rotating units rotate the two magnetic field forming units during a period in which the base material is not disposed at the deposition position. A sputtering apparatus according to any one of claims 1 to 4,
The at least one plasma processing unit is a plurality of plasma processing units, and the at least one film forming location is a plurality of film forming locations,
The transport mechanism includes a reciprocating operation for reciprocating the base material along the transport path surface so that the base material passes through the single film-formed location a plurality of times, and the one film-forming location. It is a mechanism that repeats the feeding operation of transporting the base material to another deposition position adjacent to the transport downstream side,
From the upstream side of the transfer to the downstream side of the transfer, from the plasma processing unit in which the two magnetic field forming units are arranged substantially opposite to the plasma processing unit in which the two magnetic field forming units are arranged closer to the corresponding film formation location The sputtering apparatus is characterized in that the arrangement of each magnetic field forming unit in each plasma processing unit is set. A sputtering apparatus for performing a film forming process on a main surface of a substrate,
A vacuum chamber for forming a processing space therein;
A sputtering gas supply unit for supplying a sputtering gas to the processing space;
At least one plasma processing unit disposed in the processing space;
A transport mechanism for transporting the base material along a transport path surface including at least one deposition position facing the at least one plasma processing unit;
Prepared,
The at least one plasma processing unit includes:
A cathode pair in which two rotating cathodes, which are cylindrical and whose outer peripheral surfaces are coated with a target material, are arranged to face each other at a predetermined distance in the processing space;
Two first rotating parts for rotating each rotating cathode around a respective central axis;
Sputtering voltage supply means for applying a sputtering voltage to the two rotating cathodes;
Each of the two rotating cathodes is housed inside and forms a magnetic field in the vicinity of itself on the outer peripheral surface, and can rotate about the central axis of the two rotating cathodes independently of the two rotating cathodes. Two magnetic field forming portions provided;
With
The at least one plasma processing unit is a plurality of plasma processing units, and the at least one film forming location is a plurality of film forming locations,
Among the plurality of plasma processing units, the plasma processing unit closest to the conveyance downstream includes a high-density plasma source that generates high-density plasma in a space including a portion where the magnetic field is formed in the processing space, and the high-density plasma source. High-frequency power supply means for supplying high-frequency power to the plasma source;
With
The transport mechanism is a mechanism that moves the base material in one direction along the transport path surface;
From the upstream side of the transfer to the downstream side of the transfer, from the plasma processing unit in which the two magnetic field forming units are arranged substantially opposite to the plasma processing unit in which the two magnetic field forming units are arranged closer to the corresponding film formation location The arrangement of each magnetic field forming unit in each plasma processing unit is set prior to the film forming process ,
At the start of the film formation process, the two magnetic field forming portions are arranged substantially opposite to each other,
The most downstream side by plasma treatment in forming the base material, a sputtering apparatus, characterized that you supply a high frequency power to the high-density plasma source by the high-frequency power supply means. The sputtering apparatus according to any one of claims 1 to 6 ,
The sputtering apparatus, wherein the polarities of the two magnetic field forming portions are complementary. A sputtering apparatus according to any one of claims 1 to 7 ,
The sputtering apparatus, wherein the sputtering voltage supply means applies AC sputtering voltages having opposite phases to the two rotating cathodes. A sputtering apparatus according to any one of claims 1 to 7 ,
The sputtering apparatus, wherein the sputtering voltage supply means applies a negative voltage to the two rotating cathodes. A sputtering apparatus according to any one of claims 1 to 7 ,
The sputtering apparatus, wherein the sputtering voltage supply means applies a pulsed voltage including a negative voltage and a positive voltage to the two rotating cathodes. A sputtering method for performing a film forming process on a main surface of a base material using an apparatus including a vacuum chamber for forming a processing space therein and at least one plasma processing unit disposed in the processing space. ,
The at least one plasma processing unit includes a cathode pair in which two rotating cathodes having a cylindrical shape and an outer peripheral surface coated with a target material are arranged to face each other at a predetermined distance in the processing space, and the two rotating cathodes Two magnetic field forming portions that are provided so as to be rotatable around respective central axis lines and that form a magnetic field in the vicinity of the outer peripheral surface,
A high-density plasma source for generating high-density plasma in a space including a portion where the magnetic field is formed in the processing space;
With
The method
Supplying a sputtering gas to the processing space;
Placing the two magnetic field forming portions substantially opposite to each other;
A first rotation step of rotating each rotating cathode around its central axis;
Applying a sputtering voltage to the two rotating cathodes;
Bi-directionally moving the substrate along a transfer path surface including at least one deposition position facing the at least one plasma processing unit;
A second rotation step of rotating the two magnetic field forming units around their respective central axes in a direction in which each of the two magnetic field forming units approaches a corresponding deposition position;
A high frequency power supply step of supplying high frequency power to the high density plasma source after the second rotation step;
A sputtering method comprising: It is a sputtering method of Claim 11 , Comprising:
The at least one plasma processing unit includes a shutter disposed in the vicinity of the high-density plasma source;
The method
In a step prior to the high frequency power supply step, the shutter is displaced so that the high density plasma source is covered with the shutter, and the high density plasma is supplied when the high frequency power is supplied in the high frequency power supply step. A source having an open state communicating with the processing space;
A sputtering method comprising: A sputtering method according to any one of claims 11 to 12,
The sputtering method, wherein the second rotation step is performed during a period in which the base material is not disposed at the deposition position. Using a device including a vacuum chamber for forming a processing space therein and a plurality of plasma processing units disposed in the processing space, a plurality of deposition locations facing the plurality of plasma processing units are provided. A sputtering method for performing a film forming process on a main surface of a base material transported along a transport path surface including:
Each plasma processing unit includes a cathode pair in which two rotating cathodes having a cylindrical shape and an outer peripheral surface coated with a target material are arranged to face each other at a predetermined distance in the processing space, and inside the two rotating cathodes. Two magnetic field forming portions provided so as to be rotatable around respective central axes, and forming a magnetic field in the vicinity of the outer peripheral surface;
A high-density plasma source for generating high-density plasma in a space including a portion where the magnetic field is formed in the processing space;
With
The method
Supplying a sputtering gas to the processing space;
From the upstream side of the transfer to the downstream side of the transfer, from the plasma processing unit in which the two magnetic field forming units are arranged substantially opposite to the plasma processing unit in which the two magnetic field forming units are arranged closer to the corresponding film formation location , Setting the arrangement of each magnetic field forming unit in each plasma processing unit,
A first rotation step of rotating each rotating cathode around its central axis;
A reciprocating operation for reciprocating the base material along the transport path surface so that the base material passes through the same film forming location a plurality of times, and adjacent to the downstream side of transport with respect to the one film forming location. A step of repeating the feeding operation of transporting the base material to the other deposition position to be performed,
Applying a sputtering voltage to the two rotating cathodes;
A second rotation step of rotating the two magnetic field forming units around their respective central axes in a direction in which each of the two magnetic field forming units approaches a corresponding deposition position;
A high frequency power supply step of supplying high frequency power to the high density plasma source after the second rotation step;
A sputtering method comprising: Using a device including a vacuum chamber for forming a processing space therein and a plurality of plasma processing units disposed in the processing space, a plurality of deposition locations facing the plurality of plasma processing units are provided. A sputtering method for performing a film forming process on a main surface of a base material transported along a transport path surface including:
Each plasma processing unit includes a cathode pair in which two rotating cathodes having a cylindrical shape and an outer peripheral surface coated with a target material are arranged to face each other at a predetermined distance in the processing space, and inside the two rotating cathodes. Two magnetic field forming portions provided so as to be rotatable around respective central axes, and forming a magnetic field in the vicinity of the outer peripheral surface,
The most downstream plasma processing unit among the plurality of plasma processing units is
A high-density plasma source for generating high-density plasma in a space including a portion where the magnetic field is formed in the processing space;
With
The method
Supplying a sputtering gas to the processing space;
From the upstream side of the transfer to the downstream side of the transfer, from the plasma processing unit in which the two magnetic field forming units are arranged substantially opposite to the plasma processing unit in which the two magnetic field forming units are arranged closer to the corresponding film formation location , Setting the arrangement of each magnetic field forming unit in each plasma processing unit,
A first rotation step of rotating each rotating cathode around its central axis;
Transporting the base material along the transport path surface;
Applying a sputtering voltage to the two rotating cathodes;
A high-frequency power supply step of supplying high-frequency power to the high-density plasma source of the most downstream plasma processing unit;
A sputtering method comprising:

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