JP2017053005A - Removal method and removal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a removal method capable of executing a removal work of adsorption gas or an adsorbate effectively by the whole in a chamber, and to provide a removal device.SOLUTION: Before or after a treatment period during which a treatment is executed onto a substrate, high-frequency power is supplied to a plurality of LIAs (Low Inductance Antennas) provided penetratingly through an inner wall of a chamber, to thereby generate plasma in the whole of an internal space of the chamber. Adsorption gas or an adsorbate is desorbed from an adsorption spot and evaporated by action of plasma, and discharged to the outside of the chamber by evacuation.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a removal method and a removal apparatus for removing an adsorbed gas or adsorbate in a chamber.

  A technique for removing an adsorbed gas or adsorbed material adsorbed on at least a part of a chamber capable of accommodating a substrate to be processed is known. For example, Patent Document 1 discloses a technique for removing an adsorbed gas or an adsorbed material by heating the inside of a chamber.

JP 2010-84211 A Japanese Patent Application Laid-Open No. 2012-26020 JP 2005-163183 A

  However, when the removal operation of the adsorbed gas or adsorbed material is performed only by heating without using the plasma action, there are problems that the removing operation takes a long time and the adsorbed gas or adsorbed material cannot be sufficiently removed.

  Thus, Patent Document 2 discloses a technique in which plasma is generated between two flat plates by a parallel plate type plasma apparatus and the removal operation is efficiently performed by the action of the plasma.

  However, when performing the removal operation by generating plasma only in the processing space in the internal space of the chamber as in this technique, the adsorbed gas or the non-processing space in the internal space of the chamber excluding the processing space (non-processing space) The adsorbate remains. This increases the risk of the substrate being contaminated when the substrate is carried into the chamber, reduces the speed and accuracy of evacuation during evacuation of the chamber, and if the chamber is a processing chamber, There have been problems such as a decrease in accuracy in the substrate processing.

  Therefore, the cited document 3 discloses a remote plasma technique in which a plasma generated outside the chamber acts on a wide range in the chamber.

  However, when the plasma generated outside the chamber is used for the removal work inside the chamber as in this technique, the plasma action is weakened due to the large distance from the plasma source to the adsorption site, and the removal work is effectively performed. (The problem that the removal work takes a long time, the adsorbed gas or adsorbate cannot be removed sufficiently) has occurred.

  Therefore, an object of the present invention is to provide a removal method and a removal apparatus capable of effectively performing an operation of removing an adsorbed gas or an adsorbate in the entire chamber.

  The removal method according to the first aspect of the present invention is a removal method for removing an adsorbed gas or adsorbed material adsorbed on at least a part of a chamber capable of accommodating a substrate to be treated. As steps performed before or after the processing period for performing the processing, an exhaust step for exhausting the gas in the chamber, a gas supply step for supplying the gas into the chamber, and an inner wall of the chamber are provided. A plasma generation step of supplying high frequency power to a plurality of LIAs (Low Inductance Antennas) to generate plasma in the entire interior space of the chamber, and the adsorbed gas by the action of the plasma in the plasma generation step Alternatively, the adsorbate is desorbed from the adsorption site and vaporized, and discharged to the outside of the chamber in the exhaust process.

  The removal method according to the second aspect of the present invention is the removal method according to the first aspect of the present invention, wherein the plurality of LIAs are provided so as to protrude through the inner wall of the chamber and into the internal space. It is characterized by that.

  The removal method according to the third aspect of the present invention is the removal method according to the first aspect or the second aspect of the present invention, wherein each of the steps is performed in a state where the substrate is accommodated in the chamber. When executed, the adsorbed gas or adsorbed material adsorbed on the base material is also desorbed and vaporized from the adsorbed portion by the action of the plasma in the plasma generation step, and discharged to the outside of the chamber in the exhaust step. It is characterized by doing.

  A removal method according to a fourth aspect of the present invention is the removal method according to the first aspect or the second aspect of the present invention, wherein each of the steps is performed in a state where the substrate is not accommodated in the chamber. Is executed.

  A removing method according to a fifth aspect of the present invention is the removing method according to any one of the first to fourth aspects of the present invention, wherein the chamber is formed by the base when the processing is performed. It is a processing chamber in which a material is accommodated.

  A removal method according to a sixth aspect of the present invention is the removal method according to the fifth aspect of the present invention, wherein at least some of the plurality of LIAs used in the plasma generation step are also subjected to the treatment. It is used.

  A removing method according to a seventh aspect of the present invention is the removing method according to any one of the first to fourth aspects of the present invention, wherein the chamber is a non-treatment chamber. .

  A removal method according to an eighth aspect of the present invention is the removal method according to any one of the first to seventh aspects of the present invention, wherein at least a part of the gas supply unit used in the gas supply step. Is also used in the processing.

  A removal apparatus according to a ninth aspect of the present invention is a removal apparatus for removing adsorbed gas or adsorbate adsorbed on at least a part of a chamber capable of accommodating a substrate to be processed, the chamber, A base material holding part for holding the base material in the chamber, an exhaust part for exhausting the gas in the chamber, a gas supply part for supplying gas into the chamber, and an inner wall of the chamber are provided. A plasma generation unit that supplies high-frequency power to a plurality of LIAs (Low Inductance Antennas) and generates plasma in the entire interior space of the chamber, and before or after a processing period in which the substrate is processed The adsorbed gas or the adsorbed material is desorbed and vaporized from the adsorption site by the action of the plasma generated by the plasma generating unit, and the exhaust is exhausted from the exhaust unit. It is characterized by discharging to the outside of the bar.

  In the present invention, high frequency power is supplied to a plurality of LIAs (Low Inductance Antennas) provided through the inner wall of the chamber to generate plasma in the entire internal space. By the action of this plasma, the adsorbed gas or adsorbate is desorbed from the adsorbed portion and vaporized, and exhausted to the outside of the chamber by exhaust.

  For this reason, in the aspect of this invention, compared with the other aspect (for example, patent document 1) which removes only by heating, without using a plasma action, a removal work can be performed efficiently by a plasma action. Further, in the aspect of the present invention, unlike other aspects (for example, Patent Document 2) in which plasma is generated only in the processing space in the internal space of the chamber and the removal operation is performed, the adsorbed gas is contained in the entire internal space of the chamber. Alternatively, the adsorbate can be removed. Thereby, effects such as reduction of the risk of contamination of the substrate, improvement of the speed and accuracy of evacuation during evacuation, and improvement of accuracy in the subsequent substrate processing can be obtained. Further, in the aspect of the present invention, in the chamber without weakening the plasma action as compared with other aspects using the remote plasma technology in which the plasma generated outside the chamber acts in the chamber (for example, Patent Document 3). The removal work can be effectively performed by giving.

It is a cross-sectional schematic diagram which shows the structural example of a sputtering device. It is a cross-sectional schematic diagram which shows the periphery of a sputter processing part. It is a side view which shows an inductive coupling antenna. It is a perspective view which shows the periphery of a sputter processing part. An example of the timing chart in a removal operation | work and a sputter | spatter process is shown. 4 is an XRD chart of a ZnO film obtained when a sputtering process is performed after a removing operation in a sputtering apparatus. 6 is an XRD chart of a ZnO film obtained when a sputtering process is performed without performing a removal operation in a sputtering apparatus. In a modification, it is a cross-sectional schematic diagram which shows the periphery of a sputter | spatter process part.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, parts having similar configurations and functions are denoted by the same reference numerals, and redundant description is omitted. In addition, the following embodiment is an example which actualized this invention, and is not an example which limits the technical scope of this invention. In the drawings, the size and number of each part may be exaggerated or simplified for easy understanding. Also, in the drawings, XYZ orthogonal coordinate axes may be given to describe directions. The + Z direction on the coordinate axis is a vertically upward direction, and the XY plane is a horizontal plane.

<1 embodiment>
<1.1 Overall Configuration of Sputtering Apparatus 1>
FIG. 1 is a schematic cross-sectional view schematically showing a schematic configuration of the sputtering apparatus 1. FIG. 2 is a schematic cross-sectional view showing the sputter processing unit 50 and its periphery. FIG. 3 is a side view showing an example of the inductively coupled antenna 151. FIG. 4 is a perspective view showing the sputter processing unit 50 and its periphery.

  The sputtering apparatus 1 is an apparatus for forming a ZnO film by sputtering on the main surface of the substrate 91 being conveyed. The base material 91 is configured by, for example, a glass substrate.

  The sputtering apparatus 1 includes a chamber 100 (processing chamber), a transport mechanism 30 that transports the base material 91, a sputtering processing unit 50 that performs a sputtering process on the transported base material 91, and inductively coupled plasma in the chamber 100. A plasma generation unit 80 to be generated and a control unit 190 that performs overall control of each unit of the sputtering apparatus 1 are provided. The chamber 100 is a hollow member having a rectangular parallelepiped shape. The chamber 100 is disposed so that the upper surface of the bottom plate is in a horizontal posture. Each of the X axis and the Y axis is an axis parallel to the side wall of the chamber 100.

  The sputtering apparatus 1 further includes a chimney 60 that is a cylindrical shielding member disposed so as to surround the periphery of the sputtering processing unit 50. The chimney 60 has a function as a shield that limits the range of plasma generated in the sputter processing unit 50 and the scattering range of sputtered particles sputtered from the target, and an atmosphere blocking function that blocks the atmosphere inside the chimney from the outside. Have. Hereinafter, of the internal space of the chamber 100, a space inside the chimney 60 where the sputtering process is performed is referred to as a processing space V1, and an outer space partitioned by the chimney 60 is referred to as a non-processing space V2.

  In the chamber 100, a horizontal transfer path surface L is defined above the chimney 60. The extending direction of the conveyance path surface L is the X-axis direction, and the base material 91 is conveyed along the X-axis direction.

  In addition, the sputtering apparatus 1 includes a plate-like heating unit 40 that heats the base material 91 that is transported in the chamber 100. The heating unit 40 is constituted by, for example, a sheath heater disposed on the upper side of the transport path surface L.

  A gate 160 for carrying the base material 91 into the chamber 100 is provided at the end of the transport path plane L on the −X side of the chamber 100. On the other hand, a gate 161 for carrying the base material 91 out of the chamber 100 is provided at the end of the transport path plane L on the + X side of the chamber 100. Moreover, the opening part of other chambers, such as a load lock chamber and an unload lock chamber, is connectable with the X direction both ends of the chamber 100 in the form which maintained airtight. Each of the gates 160 and 161 is configured to be openable and closable.

  The chamber 100 is connected to an exhaust unit 170 that exhausts the gas in the chamber 100. The exhaust unit 170 includes, for example, a vacuum pump (not shown), an exhaust pipe, and an exhaust valve. One end of the exhaust pipe is connected to the vacuum pump, and the other end is connected to the internal space of the chamber 100. Further, the exhaust valve is provided in the middle of the route of the exhaust pipe. Specifically, the exhaust valve is a valve that can automatically adjust the flow rate of the gas flowing through the exhaust pipe. In this configuration, when the exhaust valve is opened in a state where the vacuum pump is operated, the gas in the chamber 100 is exhausted and the chamber 100 is evacuated. The control unit 190 controls the exhaust by the exhaust unit 170, so that the pressure in the chamber 100 is adjusted to a specific value. The pressure adjustment in the chamber 100 will be described later in detail with reference to FIG.

  In the chamber 100, the transport mechanism 30 includes a plurality of pairs of transport rollers 31 that are opposed to each other across the transport path surface L in the Y direction, and a drive unit (not shown) that rotates and synchronizes these pairs. Consists of including. A plurality of pairs of the conveyance rollers 31 are provided along the X direction which is the extending direction of the conveyance path surface L. In FIG. 1, four rollers positioned on the front side (−Y side) of the four pairs of transport rollers 31 are illustrated.

  The base material 91 is detachably held under the carrier 90 by a claw-like member (not shown) provided on the lower surface of the carrier 90. The carrier 90 is configured by a plate-like tray or the like. In addition to the aspect of this embodiment, various aspects can be adopted as the aspect of holding the base material 91 in the carrier 90. For example, the substrate 91 is held in a state where the lower surface of the substrate 91 can be formed by fitting the substrate 91 into the hollow portion of a plate-like tray having a hollow portion penetrating in the vertical direction. It doesn't matter.

  When the carrier 90 on which the base material 91 is disposed is introduced into the chamber 100 through the gate 160, each transport roller 31 comes into contact with the vicinity of the edge (± Y side edge) of the carrier 90 from below. . Then, the carrier 90 and the base material 91 held by the carrier 90 are transported along the transport path surface L by synchronously rotating the transport rollers 31 by a drive unit (not shown). In the present embodiment, each conveyance roller 31 is rotatable in both clockwise and counterclockwise directions, and the carrier 90 and the substrate 91 held by the carrier 90 are conveyed in both directions (± X directions). explain. The transfer path surface L includes a deposition position P that faces the sputtering processing unit 50. For this reason, a film forming process is performed on a portion of the main surface of the base material 91 transported by the transport mechanism 30 that is disposed at the deposition target position P.

  The sputtering apparatus 1 includes a sputtering gas supply unit 510 that supplies a sputtering gas such as an argon gas that is an inert gas to the processing space V1, and a reactive gas supply unit 520 that supplies a reactive gas such as an oxygen gas to the processing space V1. With. Therefore, when both the sputtering gas supply unit 510 and the reactive gas supply unit 520 supply gas, first, a mixed atmosphere of the sputtering gas and the reactive gas is formed in the processing space V1, and the non-processing is performed with time. This mixed atmosphere is also formed in the space V2.

  Specifically, the sputter gas supply unit 510 includes, for example, a sputtering gas supply source 511 that is a supply source of a sputtering gas, and a pipe 512. One end of the pipe 512 is connected to the sputtering gas supply source 511 and the other end is connected to each nozzle 514 communicating with the processing space V1. Further, a valve 513 is provided in the course of the pipe 512. The valve 513 adjusts the amount of sputtering gas supplied to the processing space V <b> 1 under the control of the control unit 190. The valve 513 is preferably a valve that can automatically adjust the flow rate of the gas flowing through the pipe, and specifically includes, for example, a mass flow controller.

  Each nozzle 514 is provided on the ± X side of a row of inductively coupled antennas 151 provided between the rotary cathodes 5 and 6, and opens upward through the bottom plate of the chamber 100. For this reason, the sputtering gas supplied from the sputtering gas supply source 511 is introduced from each nozzle 514 into the processing space V1.

  Specifically, the reactive gas supply unit 520 includes, for example, a reactive gas supply source 521 that is a reactive gas supply source, and a pipe 522. The pipe 522 has one end connected to the reactive gas supply source 521 and the other end branched into a plurality (six in the example of FIG. 4) and a plurality of nozzles 12 (example of FIG. 4) provided in the processing space V1. Then, a total of six nozzles 12) are connected, three on the + X side and three on the −X side. A valve 523 is provided in the middle of the route of the pipe 522. The valve 523 adjusts the amount of reactive gas supplied to the processing space V <b> 1 under the control of the control unit 190.

  Each nozzle 12 is provided so as to extend in the Y direction in the + Z side region of the processing space V1. Each other end of the pipe 522 is connected to each outer end face of the X direction end faces of each nozzle 12. Each nozzle 12 is formed with a flow path that opens to each end face and is connected to the other end of the pipe 522 and branches into a plurality of portions inside the nozzle. The tip of each flow path reaches and opens each inner end face of both end faces in the X direction of the nozzle 12, and a plurality of discharge ports 11 are formed on each end face.

  An optical fiber probe 13 is provided below each nozzle 12 on the −X side. A spectroscope 14 capable of measuring the spectral intensity of plasma emission incident on the probe 13 is also provided. The spectroscope 14 is electrically connected to the control unit 190, and the measurement value of the spectroscope 14 is supplied to the control unit 190. The control unit 190 controls the valve 523 by the plasma emission monitor (PEM) method based on the output of the spectroscope 14, thereby introducing the reactive gas introduced into the chamber 100 from the reactive gas supply unit 520. To control. The valve 523 is preferably a valve that can automatically adjust the flow rate of the gas flowing through the pipe. For example, the valve 523 preferably includes a mass flow controller.

  Each component included in the sputtering apparatus 1 is electrically connected to a control unit 190 included in the sputtering apparatus 1, and each component is controlled by the control unit 190. Specifically, the control unit 190 includes, for example, a CPU that performs various arithmetic processes, a ROM that stores programs, a RAM that serves as a work area for arithmetic processes, a hard disk that stores programs and various data files, a LAN, and the like. A data communication unit having a data communication function via a general FA computer is connected to each other by a bus line or the like. The control unit 190 is connected to an input unit composed of a display for performing various displays, a keyboard, a mouse, and the like.

<1.2 Sputter processor 50 and plasma generator 80>
In the sputtering apparatus 1, the operation of removing the adsorbed gas or adsorbate adsorbed on at least a part of the chamber 100 can be performed by mainly causing the plasma generation unit 80 to function under the control of the control unit 190.

  In the sputtering apparatus 1, the sputtering process can be performed on the substrate 91 by mainly causing the sputtering processing unit 50 to function under the control of the control unit 190.

  Hereinafter, the plasma generation unit 80 and the sputtering processing unit 50 will be described in detail.

<1.2.1 Plasma Generator 80>
The plasma generation unit 80 includes a plurality of inductively coupled antennas 151 (LIA), a matching circuit 154, and a high frequency power source 153 that supplies high frequency power to each inductively coupled antenna 151 via the matching circuit 154.

  In the present embodiment, five rows of inductively coupled antennas 151 are provided in the chamber 100 at intervals along the X direction. Here, one line of inductively coupled antennas 151 means five inductively coupled antennas 151 provided at intervals along the Y direction.

  More specifically, one row of inductively coupled antennas 151 is provided on the −X side from the chimney 60. In addition, one row of inductively coupled antennas 151 is provided in the chimney 60 and on the −X side of the rotating cathode 5. A row of inductively coupled antennas 151 is provided in the chimney 60 and between the rotating cathodes 5 and 6. In addition, one row of inductively coupled antennas 151 is provided in the chimney 60 and on the + X side of the rotating cathode 6. In addition, one row of inductively coupled antennas 151 is provided on the + X side of the chimney 60.

  Therefore, the high frequency power supply 153 supplies high frequency power (for example, power with a frequency of 13.56 MHz) to each inductive coupling antenna 151, so that the three rows of inductive coupling antennas 151 provided inside the chimney 60 have the processing space V1. An inductively coupled plasma is generated inside, and two rows of inductively coupled antennas 151 provided outside the chimney 60 generate inductively coupled plasma in the non-processing space V2. As described above, the plasma generator 80 generates inductively coupled plasma in the entire internal space of the chamber 100.

  Each inductively coupled antenna 151 is covered with a dielectric protective member 152 made of quartz glass or the like, and is provided so as to protrude into the internal space of the chamber 100 through the inner wall (in this embodiment, the bottom plate) of the chamber 100.

  For example, as shown in FIG. 3, each inductive coupling antenna 151 is formed by bending a metal pipe-like conductor into a U shape, and the bottom plate of the chamber 100 with the “U” shape turned upside down. And projecting into the internal space of the chamber 100. The inductively coupled antenna 151 is appropriately cooled, for example, by circulating cooling water therein.

One end of each inductively coupled antenna 151 is electrically connected to a high frequency power source 153 via a matching circuit 154. The other end of each inductively coupled antenna 151 is grounded. In this configuration, when high frequency power is supplied from the high frequency power source 153 to the inductively coupled antenna 151, a high frequency induced magnetic field is generated around the inductively coupled antenna 151, and inductively coupled plasma (ICP) is generated in the internal space of the chamber 100. Will occur. This inductively coupled plasma is a high-density plasma having an electron spatial density of 3 × 10 ¹⁰ atoms / cm ³ or more.

  In addition, the U-shaped inductively coupled antenna 151 as in this embodiment corresponds to an inductively coupled antenna having less than one turn, and has a lower inductance than an inductively coupled antenna having more than one turn. For this reason, the high frequency voltage generated at both ends of the inductive coupling antenna 151 is reduced, and the high frequency fluctuation of the plasma potential accompanying the electrostatic coupling to the generated plasma is suppressed. For this reason, excessive electron loss accompanying the plasma potential fluctuation to the ground potential is reduced, and the plasma potential can be suppressed particularly low. Thereby, damage to the base material 91 can be reduced.

  In the removal operation, first, the adsorbed gas or adsorbed material adsorbed on at least a part of the chamber 100 is desorbed from the adsorbed portion and vaporized by the action of the plasma generated by the plasma generating unit 80. Thereafter, the exhaust unit 170 exhausts the gas vaporized by the plasma action and exhausts the gas to the outside of the chamber 100.

<1.2.2 Sputter processing unit 50>
The sputter processing unit 50 is housed in the two rotary cathodes 5 and 6, the two rotary cathodes 19 that rotate the two rotary cathodes 5 and 6 about their respective central axes, and the two rotary cathodes 5 and 6, respectively. And two sputtering units 163 and 22 for supplying sputtering power to the two rotating cathodes 5 and 6, respectively.

  The rotary cathodes 5 and 6 are arranged to face each other with a certain distance in the X direction in the processing space V1 and are configured as a cathode pair. By arranging the rotary cathodes 5 and 6 side by side in this manner, radicals are more concentrated on the film formation location P on the base material 91, and the film quality of the film obtained by the sputtering process can be improved.

  Further, the sputter processing unit 50 supplies a high frequency power to each inductive coupling antenna 151 via the inductive coupling antenna 151, the matching circuit 154, and the matching circuit 154 provided between the rotating cathodes 5 and 6. And a power supply 153. That is, these elements are shared by the plasma generation unit 80 and the sputtering processing unit 50.

  The magnet unit 21 (22) forms a magnetic field (static magnetic field) in the vicinity of itself on the outer peripheral surface of the rotating cathode 5 (6). One row of inductively coupled antennas 151 provided between the rotating cathodes 5 and 6 generates inductively coupled plasma in a space including a portion where a magnetic field is formed by the magnet units 21 and 22 in the processing space V1.

  The rotary cathode 5 (6) includes a cylindrical base member 8 that extends in the Y direction perpendicular to the transport direction in a horizontal plane, and a cylindrical target 16 that covers the outer periphery of the base member 8. ing. The base member 8 is a conductor, and a material containing zinc (Zn) and oxygen (O) for forming a ZnO film is used as the target 16. Note that the rotary cathode 5 (6) may be configured by the cylindrical target 16 without including the base member 8. The target 16 is formed by, for example, a technique of compressing and molding a target material powder into a cylindrical shape and then inserting the base member 8.

  In the present specification, when the rotating cathodes 5 and 6 arranged side by side and the magnet units 21 and 22 arranged inside each are integrally expressed, they are referred to as a magnetron cathode pair.

  Both end portions in the direction of the central axis 2 (3) of each base member 8 are respectively closed by lid portions each having a circular opening at the center portion. The length of the rotating cathode 5 (6) in the direction of the central axis 2 (3) is set to 1,400 mm, for example, and the diameter is set to 150 mm, for example.

  The sputter processing unit 50 further includes two pairs of seal bearings 9 and 10 and two cylindrical support rods 7. Each pair of the seal bearings 9 and 10 is provided with the rotary cathode 5 (6) sandwiched in the longitudinal direction (Y direction) of the rotary cathode 5 (6). Each of the seal bearings 9 and 10 includes a base portion standing from the upper surface of the bottom plate of the chamber 100 and a substantially cylindrical cylindrical portion provided on the upper portion of the base portion.

  One end of each support bar 7 is supported by the cylindrical portion of the seal bearing 9, and the other end is supported by the cylindrical portion of the seal bearing 10. Each support bar 7 is inserted into the rotary cathode 5 (6) from the opening of the lid at one end of the base member 8, and passes through the rotary cathode 5 (6) along the central axis 2 (3). 8 is out of the rotating cathode 5 (6) through the opening of the lid at the other end.

  The magnet unit 21 (22) includes a yoke 25 (support plate) formed of a magnetic material such as permeable steel, and a plurality of magnets (a central magnet 23a and a peripheral magnet 23b described later) provided on the yoke 25. It is prepared for.

  The yoke 25 is a flat member and extends in the longitudinal direction (Y direction) of the rotary cathode 5 so as to face the inner peripheral surface of the rotary cathode 5 (6). A central magnet 23 a extending in the longitudinal direction of the yoke 25 is disposed on a center line along the longitudinal direction of the yoke 25 on the surface of the yoke 25 facing the inner peripheral surfaces of the rotary cathodes 5 and 6. On the outer edge portion of the surface of the yoke 25, an annular (endless) peripheral magnet 23b surrounding the periphery of the central magnet 23a is further provided. The central magnet 23a and the peripheral magnet 23b are constituted by permanent magnets, for example.

  The polarities on the target 16 side of the central magnet 23a and the peripheral magnet 23b are different from each other. The polarities of the two magnet units 21 and 22 are configured to be complementary. For example, in the magnet unit 21, the polarity of the central magnet 23a on the target 16 side is N pole and the polarity of the peripheral magnet 23b is S pole, while in the magnet unit 22, the polarity of the central magnet 23a on the target 16 side is S pole. The polarity of the peripheral magnet 23b is the N pole.

  One end of the fixing member 27 is joined to the back surface of the yoke 25. The other end of the fixing member 27 is joined to the support bar 7. Thereby, the magnet units 21 and 22 are connected to the support rod 7. In the present embodiment, the magnet units 21 and 22 constituting the magnetron cathode pair are fixed in a state where the magnet units 21 and 22 are rotated by a predetermined angle in the + Z direction approaching the deposition position P from a position facing each other. For this reason, a relatively strong static magnetic field is formed between the magnet units 21 and 22 in the space between the rotary cathodes 5 and 6 and on the film formation location P side.

  The base part of each seal bearing 9 is provided with a rotating part 19 having a motor and gears (not shown) for transmitting the rotation of the motor. In addition, gears (not shown) that mesh with the gears of the respective rotary portions 19 are provided around the opening of the + Y side lid portion of the base member 8 of the rotary cathodes 5 and 6.

  Each rotating portion 19 rotates the rotating cathode 5 (6) about the central axis 2 (3) by the rotation of the motor. More specifically, the rotating unit 19 is arranged around the central axes 2 and 3 so that the portions of the outer peripheral surfaces of the rotating cathodes 5 and 6 facing each other move from the lower side toward the upper side. The rotating cathodes 5 and 6 are rotated in the reverse direction. The rotation speed is set to, for example, 10 to 20 rotations / minute, and the constant rotation is performed at the rotation speed and the rotation direction described above during the sputtering process. The rotary cathodes 5 and 6 are appropriately cooled by circulating cooling water through the seal bearing 10 and the support rod 7.

  The electric wire connected to the power supply 163 for the sputter is branched into two and led into the sealed bearings 10 of the rotary cathodes 5 and 6. At the tip of each electric wire, a brush that contacts the lid portion on the −Y side of the base member 8 of the rotary cathodes 5 and 6 is provided. The power source 163 for sputter supplies sputtering power to the base member 8 through this brush. In this embodiment, the sputtering power source 163 supplies negative potential direct current power to the rotating cathodes 5 and 6. In addition to this, for example, the sputtering power source 163 may supply AC sputtering powers having opposite phases to the rotating cathodes 5 and 6, and the sputtering power source 163 may supply a negative potential to the rotating cathodes 5 and 6. It is also possible to supply a pulsed power consisting of a positive potential.

  When sputtering power is supplied to each base member 8 (and thus each target 16), plasma of sputtering gas is generated on the surface of each target 16 in the processing space V1. This plasma is confined with high density in the space between the rotating cathodes 5 and 6 and on the film-forming location P side by the static magnetic field formed by the magnet units 21 and 22. In the present specification, the plasma densified by the magnetic field confinement effect is referred to as magnetron plasma. In the embodiment in which the magnetron cathode pair generates magnetron plasma as in the present embodiment, the plasma is densified compared to the case where one magnetron cathode generates magnetron plasma. For this reason, the aspect of this embodiment is desirable from the viewpoint of improving the film formation rate.

  As described above, one row of inductively coupled antennas 151 provided between the rotating cathodes 5 and 6 generates inductively coupled plasma in a space including a portion where a magnetic field is formed by the magnet units 21 and 22 in the processing space V1. To do. As a result, the magnetron plasma generated by the magnetron cathode pair and the inductively coupled plasma generated by the inductively coupled antenna 151 overlap each other to form a mixed plasma. The high-density inductively coupled plasma generated by the inductively coupled antenna 151 also contributes to sputtering of the target 16 together with the magnetron plasma generated by the magnetic units 21 and 22 in the vicinity of the outer peripheral surfaces of the rotating cathodes 5 and 6.

  When the inductively coupled plasma contributes to sputtering in this way, the sputtering voltage can be lowered even when the sputter power supplied to the rotating cathodes 5 and 6 is the same as compared with the case where no inductively coupled plasma contributes ( Impedance can be reduced). Thereby, the film-forming process is performed at a high film-forming rate while the damage given to the film-forming surface of the base material 91 by recoil argon and negative ions flying from the target 16 is reduced.

  In the sputtering process, a sputtering gas and a reactive gas are introduced into the processing space V1 of the chamber 100, and a ZnO target 16 covering the outer periphery of the rotating cathodes 5 and 6 is sputtered in the mixed plasma atmosphere. A ZnO film is formed on the substrate 91 facing the substrate.

<1.3 Example of removal work and sputtering process>
FIG. 5 shows an example of a timing chart in the removing operation and the sputtering process.

  The removing operation is an operation for removing the adsorbed gas or adsorbed material adsorbed on at least a part of the chamber 100, and is performed before or after the processing period for performing the sputtering process on the base material 91.

  Hereinafter, with reference to FIG. 5, a mode in which the removal work period (time t1 to t5) is set immediately before the sputtering process period (time t7 to t10) will be described. In the following, a mode in which the removal operation is performed in a state where the base material 91 is accommodated in the chamber 100 will be described.

  At time t0 to t1, the exhaust unit 170 exhausts the gas in the chamber 100. Specifically, the exhaust unit 170 exhausts the gas in the chamber 100 until the pressure in the chamber 100 reaches the base vacuum pressure (for example, 2.0 × 10 −4 [Pa]).

  When the pressure in the chamber 100 reaches the base vacuum pressure, supply of the sputtering gas is started by the sputtering gas supply source 511 at time t1 (gas supply process). Moreover, the pressure in the chamber 100 is a predetermined pressure (for example, 3.0 [Pa]) suitable for applying high-frequency power to the inductive coupling antenna 151 (switching each inductive coupling antenna 151 from the OFF state to the ON state). The exhaust unit 170 exhausts the gas in the chamber 100 until it reaches.

  When the pressure in the chamber 100 reaches the predetermined pressure, high-frequency power is supplied to each inductive coupling antenna 151 (five rows of inductive coupling antennas 151) by the high-frequency power source 153 at time t2. Thereby, inductively coupled plasma is generated in the entire internal space of the chamber 100 (plasma generating step).

  When inductively coupled plasma is generated in the entire internal space of the chamber 100, exhaust is performed until a process pressure (for example, 0.5 [Pa]) suitable for performing plasma processing in the chamber 100 is reached at time t3. The unit 170 exhausts the gas in the chamber 100.

  Thereafter, a plasma generation process is performed for a certain period, and the adsorbed gas or the adsorbed material (for example, water vapor or water) adsorbed to at least a part of the chamber 100 is desorbed from the adsorbed portion and vaporized by the action of inductively coupled plasma. When this period ends, at time t4, the supply of high-frequency power to each inductively coupled antenna 151 by the high-frequency power source 153 is stopped. That is, each inductive coupling antenna 151 is switched from the ON state to the OFF state.

  Thereafter, at time t5, the supply of the sputtering gas by the sputtering gas supply source 511 is stopped. Further, the exhaust unit 170 exhausts the gas in the chamber 100 until the pressure in the chamber 100 reaches the base vacuum pressure.

  Thus, the adsorbed gas or adsorbate is vaporized by the plasma action, and the vaporized gas is exhausted to the outside of the chamber 100 by an exhaust process that is continuously performed. The removal operation of the adsorbed gas or adsorbed material is completed for the above components and the base material 91 disposed in the chamber 100.

  Next, a sputtering process is performed. Specifically, when the pressure in the chamber 100 reaches the base vacuum pressure, supply of the sputtering gas is started by the sputtering gas supply source 511 at time t6. In addition, the reactive gas supply source 521 starts the supply of the reactive gas. Thereby, a mixed atmosphere of the sputtering gas and the reactive gas is formed in the processing space V1. Further, until the pressure in the chamber 100 reaches a predetermined pressure suitable for applying high frequency power to the inductive coupling antenna 151 (for example, 3.0 [Pa]), the exhaust unit 170 evacuates the gas in the chamber 100. Exhaust.

  When the pressure in the chamber 100 reaches the predetermined pressure, high-frequency power is supplied to the one row of inductively coupled antennas 151 disposed between the rotary cathodes 5 and 6 by the high-frequency power source 153 at time t7. Thereby, inductively coupled plasma is generated at the center position in the Y direction of the processing space V1. Further, when inductively coupled plasma is generated at the center position in the Y direction of the processing space V1, exhaust is performed until a process pressure (for example, 0.5 [Pa]) suitable for performing plasma processing in the chamber 100 is reached. The unit 170 exhausts the gas in the chamber 100.

  When the pressure in the chamber 100 reaches the process pressure, the sputtering power is supplied to the rotating cathodes 5 and 6 by the sputtering power source 163 at time t8. Thereby, a magnetron plasma is generated at the center position in the Y direction of the processing space V1. As a result, the mixed plasma of the magnetron plasma and the inductively coupled plasma is generated at the center position in the Y direction of the processing space V1 (specifically, between the rotating cathodes 5 and 6 and in the space on the deposition site P side). It is formed.

  At time t9, the supply of sputtering power to the rotating cathodes 5 and 6 by the sputtering power source 163 is stopped. That is, the rotary cathodes 5 and 6 are switched from the ON state to the OFF state.

  Moreover, the conveyance mechanism 30 conveys the base material 91 along the conveyance path | route surface L in the period of time t8-t9. More specifically, the transport mechanism 30 moves the base material 91 in the ± X direction along the transport path surface L so that the base material 91 passes through the film formation location P a plurality of times. Moreover, the base material 91 by which the heating part 40 is conveyed is heated. The heating unit 40 heats the base material 91 to 300 ° C., for example. If the heating temperature of the base material 91 is 200 ° C. or higher, the ZnO film is crystallized with a low resistivity on the base material 91. As a result, ZnO particles sputtered from the target 16 of the rotary cathodes 5 and 6 are crystallized and deposited on the −Z side main surface of the substrate 91 to be conveyed, and a ZnO film is formed.

  Thereafter, the supply of the sputtering gas by the sputtering gas supply source 511 is stopped at time t10. Further, the supply of the reactive gas by the reactive gas supply source 521 is stopped. In addition, the supply of the high frequency power to the one row of inductively coupled antennas 151 by the high frequency power source 153 is stopped. That is, the inductive coupling antenna 151 is switched from the ON state to the OFF state. Further, the exhaust unit 170 exhausts the gas in the chamber 100 until the pressure in the chamber 100 reaches the base vacuum pressure.

<1.4 Effect>
In the present embodiment, the plasma generation unit 80 generates inductively coupled plasma in the entire internal space of the chamber 100 (that is, the processing space V1 and the non-processing space V2). For this reason, in the aspect of this embodiment, the removal operation can be performed more efficiently by the plasma action than in other aspects (for example, Patent Document 1) in which the removal operation is performed only by heating without using the plasma action. Moreover, in the aspect of this embodiment, unlike other aspects (for example, patent document 2) which generate | occur | produce a plasma only in the process space V1, and perform a removal operation | work, for example, the adsorbed gas or adsorbate about the whole interior space of the chamber 100 Can be removed. Thereby, effects such as a reduction in the risk of contamination of the base material 91, an improvement in the speed and accuracy of evacuation by the exhaust unit 170, and an improvement in the quality of the film formed in the subsequent sputtering process can be obtained.

  FIG. 6 is an XRD chart of the ZnO film obtained when the sputtering process is performed after the removing operation in the sputtering apparatus 1. FIG. 7 is an XRD chart of the ZnO film obtained when the sputtering process is performed without performing the removing operation in the sputtering apparatus 1. 6 and 7, the horizontal axis indicates the incident angle 2θ of the X-ray viewed from the ZnO film surface, and the vertical axis indicates the intensity of the reflected light of the X-ray. 6 and 7, peaks appear on the 002 plane and the 004 plane of the ZnO film.

  The peak height of the XRD chart represents the crystallization rate of the deposited ZnO film, and a high peak means a high crystallization rate. Therefore, as can be seen from FIG. 6 and FIG. 7, the crystallization rate of the film obtained by the sputtering process is increased by performing the removing operation. That is, the film quality of the film obtained by the sputtering process is improved by performing the removing operation. This is considered to be because the impurities in the chamber 100 are removed in advance by the removal operation, and the impurities are not easily mixed into the film formed during the sputtering process.

  In the present embodiment, the removal operation is performed using a plurality of LIAs (five rows of inductively coupled antennas 151) provided so as to penetrate the inner wall of the chamber 100 and protrude into the internal space of the chamber 100. For this reason, in the aspect of the present embodiment, the plasma action is weakened as compared with other aspects (for example, Patent Document 3) using a remote plasma technique in which plasma generated outside the chamber 100 is caused to act in the chamber 100. It is possible to effectively perform the removal operation by applying it to the chamber 100.

  In this embodiment, at least a part of the plurality of LIAs (5 rows of inductively coupled antennas 151) used in the plasma generation process (1 row of inductively coupled antennas 151 between the rotating cathodes 5 and 6) is removed and removed. Also used in spatter processing. For this reason, the enlargement of an apparatus can be suppressed and it is desirable.

  In the present embodiment, at least a part (sputter gas supply unit 510) of the gas supply units (sputter gas supply unit 510 and reactive gas supply unit 520) used in the gas supply process is also used for the removal operation and the sputtering process. ing. For this reason, the enlargement of an apparatus can be suppressed and it is desirable.

  Further, as in the present embodiment, by performing each process while the base material 91 is accommodated in the chamber 100, the adsorbed gas or adsorbed material adsorbed on the base material 91 is also removed. Therefore, it is possible to remove impurities (adsorbed gas or adsorbed material) from both the sputtering apparatus 1 and the base material 91 by a single removal operation, which is desirable.

  In the present embodiment, the chamber in which the removal operation is performed is a processing chamber in which the base material 91 is accommodated when the sputtering process is performed. For this reason, in the aspect of this embodiment, the processing accuracy is effectively improved by the removal operation compared to other aspects in which the chamber in which the removal operation is performed is a non-processing chamber (in this embodiment, the film quality is improved). Can be desirable).

<2 Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention.

  FIG. 8 is a schematic cross-sectional view showing a sputtering processing unit and its periphery of a sputtering apparatus 1A according to a modification. In the sputtering apparatus 1A, each inductively coupled antenna 151A is covered with a dielectric protective member 152A made of quartz glass or the like, and provided through the inner wall of the chamber 100 (embedded in the inner wall of the chamber 100). Further, the upper surface of the protection member 152A and the upper surface of the bottom plate of the chamber 100 are configured to be flush with each other. Because of such a configuration, when high frequency power is supplied to each inductive coupling antenna 151A, plasma is generated in the entire internal space of the chamber 100. As a result, in the present modification, the same effect as that of the above embodiment can be obtained. That is, in the aspect of the present modification, the plasma action is not weakened as compared with other aspects (for example, Patent Document 3) using the remote plasma technology in which the plasma generated outside the chamber 100 is caused to act in the chamber 100. The removal operation can be effectively performed by being applied to the chamber 100.

  In the above embodiment, the aspect in which the removal operation and the sputtering process are continuously performed has been described. However, the removal operation and the sputtering process may be performed discontinuously. Moreover, although the said embodiment demonstrated the aspect in which a removal operation | work is performed before a process period, a removal operation | work may be performed after a process period.

  Moreover, although the said embodiment demonstrated the aspect in which a removal operation | work is performed in the state in which the base material 91 was accommodated in the chamber 100, a removal operation was performed in the state in which the base material 91 is not accommodated in the chamber 100. It does not matter. In this case, since it is not necessary to consider that the base material 91 is damaged by the removal work, each processing condition (pressure, temperature, gas type, power) of the removal work performed on each part in the chamber 100 is eliminated. Value).

  In the above-described embodiment, the mode in which the removal operation is performed in the processing chamber (chamber 100) has been described. However, the removal operation is performed in a non-processing chamber (for example, the load lock chamber or the unload lock chamber in the above-described embodiment). It does not matter. The effect that the adsorbed gas or adsorbed material can be removed by the removing operation is effective in various chambers regardless of whether or not the substrate 91 is processed.

  Moreover, although the said embodiment assumed the water vapor | steam or water as adsorption gas or adsorbate and demonstrated the aspect which performs a removal operation | work using sputtering gas (argon gas), it is not restricted to this. A gas effective for desorbing various assumed adsorption gases or adsorbates (for example, vaporized treatment liquid or treatment liquid) from the adsorption site can be appropriately used.

  Moreover, although the said embodiment demonstrated the aspect in which the sputtering apparatus 1 has a function as a removal apparatus, it is not restricted to this. Another base material processing apparatus (for example, an etching processing apparatus, a CVD apparatus, or the like) may have a function as a removing apparatus.

  Moreover, although the said embodiment demonstrated the aspect in which the conveyance mechanism 30 which conveys holding the base material 91 as a base material holding part was demonstrated, the base material holding part which hold | maintains the base material 91 in a stationary state is used. It doesn't matter. Further, the direction in which the transport mechanism 30 transports the base material 91 may be, for example, the vertical direction in addition to the horizontal direction as in the above embodiment.

  Moreover, although the said embodiment demonstrated the aspect by which each inductive coupling antenna 151 penetrates the baseplate of the chamber 100 and protrudes in the internal space of the chamber 100, it is not restricted to this. Each inductive coupling antenna 151 may be provided so as to penetrate the side wall or top plate of the chamber 100 and protrude into the internal space of the chamber 100.

  Moreover, although the said embodiment demonstrated the case where the number of the inductive coupling antennas 151 which comprise 1 row was five, this number should just change suitably according to the length of the rotating cathode 5 (6). . In addition, design items such as the position, number, and length of each part can be changed as appropriate.

  As mentioned above, although the removal method and removal apparatus which concern on embodiment and its modification were demonstrated, these are examples of preferable embodiment for this invention, Comprising: The scope of implementation of this invention is not limited. Within the scope of the invention, the present invention can be freely combined with each embodiment, modified with any component in each embodiment, or increased or decreased with any component in each embodiment.

DESCRIPTION OF SYMBOLS 1,1A Sputtering device 5,6 Rotating cathode 7 Support rod 8 Base member 16 Target 19 Rotating part 21, 22 Magnet unit 30 Conveying mechanism 31 Conveying roller 50 Sputter processing part 80 Plasma generating part 100 Chamber 151, 151A Inductively coupled antenna 153 High frequency Power source 163 Power source for sputter 60 Chimney 90 Carrier 91 Base material 510 Sputter gas supply unit 520 Reactive gas supply unit V1 Processing space V2 Non-processing space

Claims (9)

A removal method for removing an adsorbed gas or adsorbed material adsorbed on at least a part of a chamber capable of accommodating a substrate to be treated,
As a step performed before or after a processing period for executing processing on the substrate,
An exhaust process for exhausting the gas in the chamber;
A gas supply step of supplying a gas into the chamber;
A plasma generation step of supplying high frequency power to a plurality of LIAs (Low Inductance Antennas) provided through the inner wall of the chamber to generate plasma in the entire internal space of the chamber;
With
The removal method, wherein the adsorption gas or the adsorbed material is desorbed from the adsorption site by the action of the plasma in the plasma generation step and vaporized, and discharged to the outside of the chamber in the exhaust step. The removal method according to claim 1,
The removal method, wherein the plurality of LIAs are provided so as to penetrate the inner wall of the chamber and protrude into the internal space. The removal method according to claim 1 or 2, wherein
By performing each of the steps in a state where the base material is accommodated in the chamber,
The adsorbed gas or adsorbed material adsorbed on the base material is also vaporized by being desorbed from the adsorbed portion by the action of the plasma in the plasma generation step, and discharged to the outside of the chamber in the exhaust step. Removal method. The removal method according to claim 1 or 2, wherein
The removal method, wherein each step is performed in a state where the base material is not accommodated in the chamber. A removal method according to any one of claims 1 to 4,
The removal method, wherein the chamber is a processing chamber in which the base material is accommodated when the processing is performed. The removal method according to claim 5,
A removal method, wherein at least a part of the plurality of LIAs used in the plasma generation step is also used in the processing. A removal method according to any one of claims 1 to 4,
The removal method, wherein the chamber is a non-processing chamber. A removal method according to any one of claims 1 to 7,
A removal method, wherein at least a part of a gas supply unit used in the gas supply step is also used in the process. A removal device for removing an adsorbed gas or adsorbed material adsorbed on at least a part of a chamber capable of accommodating a substrate to be treated,
A chamber;
A substrate holding part for holding the substrate in the chamber;
An exhaust part for exhausting the gas in the chamber;
A gas supply unit for supplying a gas into the chamber;
A plasma generator for supplying high frequency power to a plurality of LIAs (Low Inductance Antennas) provided through the inner wall of the chamber to generate plasma in the entire internal space of the chamber;
With
Before or after the processing period for executing the processing on the base material, the adsorption gas or the adsorbed material is desorbed from the adsorption site by the action of the plasma generated by the plasma generation unit and is vaporized, and the exhaust of the exhaust unit The removal device is characterized by discharging to the outside of the chamber.

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