JP2020183550A - Sputtering apparatus - Google Patents

Abstract

To provide a sputtering apparatus capable of uniformizing the pressure of gas supplied to a target in a film deposition chamber to improve the uniformity of a thin film formed on a substrate.SOLUTION: A sputtering apparatus (1) includes an antenna (20) arranged in a predetermined first positional relationship to a first space (S1) formed between any two adjacent targets (30) out of a plurality of targets (30) and arranged in a predetermined second positional relationship to a gas introduction port (41) arranged in the first space (S1) and a gas exhaust port (51).SELECTED DRAWING: Figure 1

Description

The present invention relates to a sputtering apparatus.

A sputtering device configured to eject sputtered particles from a target by forming a magnetic field on the surface of the target to generate plasma and causing ions in the plasma to collide with the target is known as a prior art. Examples of such a sputtering apparatus include the sputtering apparatus disclosed in Patent Document 1.

The sputtering apparatus disclosed in Patent Document 1 has a target apparatus in which a voltage is applied between one set of targets with two adjacent targets as a set. The target device has a partition wall arranged facing the side surface of a set of targets, a gas introduction port is formed between the partition wall and the target, and a main exhaust port is formed on the bottom surface of the vacuum chamber. The reaction gas introduced from the gas inlet passes between a set of targets and is exhausted from the main exhaust port.

Japanese Unexamined Patent Publication No. 2013-49884 (published on March 14, 2013)

In the sputtering apparatus disclosed in Patent Document 1, a gas inlet is formed between the partition wall and the target, but a gas inlet is not formed between the set of targets. Further, although the main exhaust port is formed between the set of targets, the main exhaust port is not formed between the partition wall and the target.

Therefore, in the sputtering apparatus disclosed in Patent Document 1, the pressure of the gas supplied to the target in the vacuum chamber cannot be made sufficiently uniform, and the thin film formed on the substrate is made sufficiently uniform. There is a problem that it cannot be done. One aspect of the present invention is to make the pressure of the gas supplied to the target uniform in the film forming chamber and improve the uniformity of the thin film formed on the substrate.

In order to solve the above-mentioned problems, the sputtering apparatus according to one aspect of the present invention is provided with a vacuum vessel in which a film forming chamber in which a substrate is housed is formed so as to face the substrate, and causes plasma. A plurality of antennas to be generated and a plurality of targets provided on the opposite side of the substrate side to the plurality of antennas and to be sputtered are provided, and the film forming chamber is provided in the film forming chamber. A plurality of gas introduction ports for introducing gas and a plurality of gas exhaust ports for exhausting gas in the film forming chamber are formed, and one of the two adjacent targets among the plurality of targets is formed. Also in the above case, the antenna is arranged in a predetermined first positional relationship with respect to the first space formed between the two targets, and the gas introduction port is arranged in the first space. And the antenna is arranged in a predetermined second positional relationship with respect to the gas exhaust port.

According to the above configuration, since the positional relationship between the antenna, the target, the gas inlet, and the gas exhaust port is constant in both of the two adjacent targets, the gas supplied to the target in the film forming chamber The pressure can be made uniform. As a result, the uniformity of the thin film formed on the substrate can be improved.

The first positional relationship is a positional relationship in which the distance between the antenna and each of two adjacent targets among the plurality of targets is the same, and the second positional relationship is a positional relationship in which the antenna is the gas. The positional relationship may be such that the introduction port and the gas exhaust port face each other. According to the above configuration, the distance between the antenna and each of the two adjacent targets is the same, and the antenna faces the gas inlet and the gas exhaust port. Therefore, for each of the two adjacent targets. The pressure of the supplied gas can be made uniform.

The side where the gas exhaust port communicates with the film forming chamber in the second space so that the gas is exhausted through the second space formed between the gas introduction pipe and the target and the target holding portion. It may be formed on the opposite side. According to the above configuration, the gas introduced from the gas introduction port is exhausted via the second space formed between the gas introduction pipe and the target and the target holding portion, so that the gas is discharged into the film forming chamber. Spread evenly. As a result, the uniformity of the thin film formed on the substrate can be improved in the film forming chamber.

The sputtering device is provided for a gas introduction pipe that extends in the same direction as the extension direction of the antenna and has a concave cross section with the side facing the antenna open, and for the open side of the gas introduction pipe. , The plurality of gas introduction ports are formed, and a protective plate for preventing the sputtered particles discharged from the target from adhering to the gas introduction pipe may be further provided. According to the above configuration, since the adhesive plate is provided on the gas introduction pipe, the adhesive plate to which the sputter particles emitted from the target are attached can be replaced and maintenance can be easily performed.

The sputtering apparatus is provided on a side opposite to the open side of the gas introduction pipe, further includes an exhaust plate on which the plurality of gas exhaust ports are formed, and the adhesion plate is provided with gas in the film forming chamber. A plurality of second gas exhaust ports for exhausting to the plurality of gas exhaust ports may be formed. According to the above configuration, since the second gas exhaust port is formed in addition to the gas exhaust port, the gas exhaust amount can be adjusted in two stages of the gas exhaust port and the second gas exhaust port. Therefore, a structure for uniformly exhausting the gas can be easily realized.

The direction in which the plurality of gas inlets are lined up and the extending direction of the plurality of antennas may be the same. According to the above configuration, the gas introduced into the film forming chamber is uniformly supplied to the antenna. Therefore, since the plasma generated by the antenna is uniformly diffused on the surface of the target, the uniformity of the thin film formed on the substrate can be improved in the film forming chamber.

According to one aspect of the present invention, the pressure of the gas supplied to the target in the film forming chamber can be made uniform, and the uniformity of the thin film formed on the substrate can be improved.

It is sectional drawing which shows the structure of the sputtering apparatus which concerns on Embodiment 1 of this invention. It is a top view of the inside of the sputtering apparatus shown in FIG. It is sectional drawing which shows the structure of the sputtering apparatus which concerns on Embodiment 2 of this invention. It is a top view of the inside of the sputtering apparatus shown in FIG. It is a top view of the inside which concerns on the modification of the sputtering apparatus shown in FIG.

[Embodiment 1]
<Structure of sputtering apparatus 1>
FIG. 1 is a cross-sectional view showing the configuration of the sputtering apparatus 1 according to the first embodiment of the present invention. FIG. 2 is a plan view of the inside of the sputtering apparatus 1 shown in FIG. Specifically, FIG. 2 is a plan view of the inside of the sputtering apparatus 1 when viewed from the direction from the substrate W toward the antenna 20 in FIG. 1. Further, in FIG. 2, the substrate holding portion 70 and the vacuum exhaust devices 81 and 91 are omitted. Further, in FIGS. 1 to 5, member numbers are omitted for shapes that can be identified on the drawing.

As shown in FIG. 1, the sputtering apparatus 1 includes a vacuum vessel 10, a plurality of antennas 20, a plurality of targets 30, a plurality of target holding portions 31, a plurality of gas introduction pipes 40, an exhaust plate 50, and the like. A plurality of insulating portions 60, a substrate holding portion 70, and vacuum exhaust devices 81 and 91 are provided.

The sputtering device 1 sputters the target 30 using inductively coupled plasma to form a film on the substrate W. Here, the substrate W is, for example, a glass substrate for a flat panel display such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, or the like.

The vacuum container 10 is a container that is evacuated and gas is supplied to the inside. Further, the vacuum container 10 is a container in which a film forming chamber 11 in which the substrate W is housed is formed. The film forming chamber 11 is formed by being surrounded by the side wall 12 of the vacuum vessel 10, the bottom surface 13 of the vacuum vessel 10, the substrate holding portion 70, the plurality of targets 30, and the plurality of gas introduction pipes 40. .. A plurality of gas introduction ports 41 and a plurality of gas exhaust ports 51 are formed in the film forming chamber 11. The gas introduction port 41 and the gas exhaust port 51 will be described later.

Each of the plurality of antennas 20 is an ICP (Inductively Coupled Plasma) antenna that is provided in the film forming chamber 11 so as to face the substrate W and generates plasma. Specifically, the plurality of antennas 20 are arranged in parallel on the surface side of the substrate W in the film forming chamber 11 on the same plane along the surface of the substrate W. For example, the plurality of antennas 20 are arranged substantially parallel to the surface of the substrate W.

A portion of each antenna 20 located inside the vacuum vessel 10 is covered with a straight tubular insulating cover 21. As shown in FIG. 2, each antenna 20 has a linear shape and the same configuration in a plan view. Here, the plan view means a case where the board W is viewed from the direction toward the antenna 20.

Each of the plurality of targets 30 is provided on the side opposite to the substrate W side with respect to the plurality of antennas 20, and is a target of sputtering. Each target 30 is a flat plate having a rectangular shape in a plan view, and is, for example, an oxide semiconductor material such as InGaZnO. Each target holding portion 31 holds the target 30 so as to face the substrate W held by the substrate holding portion 70. The target holding portion 31 is provided on the exhaust plate 50 via an insulating portion 60 having a vacuum sealing function on the side opposite to the side facing the substrate W.

As shown in FIG. 2, each of the plurality of gas introduction pipes 40 extends in the same direction as the extension direction D1 of the antenna 20. Each gas introduction pipe 40 is connected to an intermediate pipe 100 extending in the same direction as the direction D2 in which the plurality of gas introduction pipes 40 are lined up via a connection pipe 101. That is, the connection pipe 101 connects each gas introduction pipe 40 and the intermediate pipe 100. The size of the plurality of gas introduction pipes 40 may be appropriately determined according to the amount of gas to be introduced into the film forming chamber 11.

A gas supply mechanism 110 is connected to the central portion of the intermediate pipe 100 in the direction D2. The gas supply mechanism 110 supplies a mixed gas of a reactive gas such as O ₂ (oxygen) or N ₂ (nitrogen) and a sputtering gas such as Ar (argon) into the inside of the intermediate pipe 100. The mixed gas supplied to the inside of the intermediate pipe 100 is supplied to the inside of the gas introduction pipe 40 through the connecting pipe 101. The mixed gas supplied to the inside of the gas introduction pipe 40 is introduced from the gas introduction port 41 toward the substrate W side of the target 30 in the film forming chamber 11.

The gas supply mechanism 110 may supply only the reactive gas to the inside of the intermediate pipe 100. In this case, the reactive gas supplied to the inside of the intermediate pipe 100 is supplied to the inside of the gas introduction pipe 40 through the connecting pipe 101. The reactive gas supplied to the inside of the gas introduction pipe 40 is introduced from the gas introduction port 41 toward the substrate W side of the target 30 in the film forming chamber 11.

Further, when the gas supply mechanism 110 supplies only the reactive gas to the inside of the intermediate pipe 100, the gas introduction port for introducing the sputtering gas into the film forming chamber 11 on the side wall 12 of the vacuum vessel 10 (FIG. (Not shown) may be formed. In this case, the sputtering gas is introduced into the film forming chamber 11 from the gas introduction port by a gas supply mechanism (not shown) that supplies the sputtering gas. The gas supply mechanism is connected to the vacuum vessel 10.

The plurality of gas introduction pipes 40 are arranged so as to extend in a direction parallel to the longitudinal direction of the plurality of targets 30 in a plan view. Each gas introduction pipe 40 is formed with a plurality of gas introduction ports 41 for introducing gas into the film forming chamber 11. The shape of the plurality of gas inlets 41 is preferably circular, but is not limited to this, and may be, for example, a triangle or a quadrangle.

The direction in which the plurality of gas introduction ports 41 are lined up is the same as the extension direction of the plurality of antennas 20, and the plurality of gas introduction ports 41 are formed along the antenna 20. According to the above configuration, the gas introduced into the film forming chamber 11 is uniformly supplied to the antenna 20. Therefore, since the plasma generated by the antenna 20 is uniformly diffused on the surface of the target 30, the uniformity of the thin film formed on the substrate W can be improved in the film forming chamber 11.

The exhaust plate 50 is provided on the side of the gas introduction pipe 40 opposite to the substrate W side, and a plurality of gas exhaust ports 51 for exhausting the gas in the film forming chamber 11 are formed. Targets 30 and gas introduction pipes 40 are alternately arranged on the exhaust plate 50. Each of the plurality of gas exhaust ports 51 is formed along the extending direction of the gas introduction pipe 40, and is formed on both sides of the gas introduction pipe 40.

As shown in FIG. 2, the total opening area of the plurality of gas exhaust ports 51 is larger than the total opening area of the plurality of gas introduction ports 41. As a result, the exhaust of the gas from the film forming chamber 11 to the outside can be prioritized over the introduction of the gas into the film forming chamber 11. Therefore, the differential pressure between the pressure in the film forming chamber 11 and the pressure in the exhaust chamber 15 can be secured, and the pressure in the film forming chamber 11 can be appropriately maintained.

Further, the gas exhaust port 51 is a film forming chamber in the second space S2 so that the gas is exhausted via the second space S2 formed between the gas introduction pipe 40 and the target 30 and the target holding portion 31. It is formed on the side opposite to the side communicating with 11.

According to the above configuration, the gas introduced from the gas introduction port 41 is exhausted via the second space S2 formed between the gas introduction pipe 40, the target 30, and the target holding portion 31. The gas is evenly distributed in the membrane chamber 11. As a result, the uniformity of the thin film formed on the substrate W can be improved in the film forming chamber 11. The gas exhaust port 51 is also formed on the side opposite to the side communicating with the film forming chamber 11 in the space between the side wall 12 of the vacuum vessel 10 and the gas introduction pipe 40.

Here, in any of the two adjacent targets 30 among the plurality of targets 30, the antenna 20 has a predetermined first positional relationship with respect to the first space S1 formed between the two targets 30. It is arranged in. Further, the antenna 20 is arranged in a predetermined second positional relationship with respect to the gas introduction port 41 and the gas exhaust port 51 arranged in the first space S1.

According to the above configuration, the positional relationship between the antenna 20, the target 30, the gas introduction port 41, and the gas exhaust port 51 is constant in any of the two adjacent targets 30. Therefore, the pressure of the gas supplied to the target 30 can be made uniform in the film forming chamber 11. Thereby, the uniformity of the thin film formed on the substrate W can be improved.

Specifically, the gas utilization efficiency can be improved, and the uniformity of the film thickness and the film quality of the thin film formed on the substrate W can be improved. Here, in particular, consider the case where the target 30 is an oxide semiconductor material such as InGaZnO.

In this case, when the oxygen partial pressure is controlled, when the oxygen partial pressure is changed as a multilayer structure, or when a thin film having a crystal structure is formed on the substrate W, the pressure of the gas supplied to the target 30 is uniform. become. As a result, the specific resistance and crystallinity of the thin film formed on the substrate W can be made extremely uniform. In addition, the partial pressure of the reactive gas in the direction D2 can be made uniform for all the targets 30.

Further, the first positional relationship is a positional relationship in which the distance between the antenna 20 and each of the two adjacent targets 30 among the plurality of targets 30 is the same, and the second positional relationship is the antenna 20. Is the positional relationship facing the gas introduction port 41 and the gas exhaust port 51. According to the above configuration, the pressure of the gas supplied to each of the two adjacent targets 30 can be made uniform.

Further, the second positional relationship is preferably a positional relationship in which the gas introduction port 41 is in a direction parallel to the direction from the substrate W toward the antenna 20 and is arranged on a straight line passing through the antenna 20. .. As a result, the gas introduced from the gas introduction port 41 can be passed through the antenna 20 and supplied to the target 30.

The substrate holding portion 70 is a holder that holds the substrate W in the film forming chamber 11 so as to be in a horizontal state, for example. In a plan view, a main exhaust port 80 is formed in the center of the upper surface 14 of the vacuum vessel 10. The main exhaust port 80 is formed to exhaust the gas introduced into the film forming chamber 11 from the gas introduction port 41 to the outside of the film forming chamber 11.

The gas in the film forming chamber 11 exhausted from the plurality of gas exhaust ports 51 is exhausted from the main exhaust port 80 to the outside of the vacuum vessel 10 by a vacuum exhaust device 81 such as a vacuum pump. The vacuum exhaust device 81 is connected to the vacuum container 10. Further, a sub-exhaust port 90 is formed on the bottom surface 13 of the vacuum container 10. The sub-exhaust port 90 is formed to exhaust the gas in the film forming chamber 11 to the outside of the film forming chamber 11 before and after forming a film on the substrate W. The gas in the film forming chamber 11 is exhausted from the sub-exhaust port 90 to the outside of the vacuum vessel 10 by a vacuum exhaust device 91 such as a vacuum pump before and after forming a film on the substrate W. The vacuum exhaust device 91 is connected to the vacuum container 10.

A plurality of main exhaust ports 80 may be formed on the upper surface 14 of the vacuum container 10. As a result, even when the size of the sputtering apparatus 1 is large, that is, when the size of the vacuum vessel 10 is large, the gas in the film forming chamber 11 can be sufficiently exhausted. Further, since the gas in the film forming chamber 11 can be uniformly exhausted, the pressure of the gas supplied to the target 30 in the film forming chamber 11 can be made uniform. A plurality of sub-exhaust ports 90 may also be formed on the bottom surface 13 of the vacuum container 10.

Here, the plurality of gas exhaust ports 51 may be formed on the exhaust plate 50 by appropriately determining the number, size, and arrangement of the plurality of gas exhaust ports 51 so that the gas exhaust speeds are equal to each other. For example, as the distance from the main exhaust port 80 increases, the number of gas exhaust ports 51 may be increased or the gas exhaust port 51 may be increased. Further, as the distance from the main exhaust port 80 is smaller, the number of gas exhaust ports 51 may be reduced or the gas exhaust port 51 may be made smaller. In FIG. 2, the configuration in which the number, size, and arrangement of the gas exhaust ports 51 are uniform is an example.

Further, the number, size, and arrangement of the plurality of gas introduction ports 41 are appropriately determined so that the gas having the same flow rate is introduced from each gas introduction port 41 into the film forming chamber 11, and the gas introduction pipe 40 is used. May be formed in. For example, as the distance from the gas supply mechanism 110 increases, the number of gas introduction ports 41 may be increased, or the gas introduction port 41 may be increased. Further, as the distance from the gas supply mechanism 110 is smaller, the number of gas introduction ports 41 may be reduced or the gas introduction ports 41 may be made smaller. In FIG. 2, the configuration in which the number, size, and arrangement of the gas introduction ports 41 are uniform is an example.

[Embodiment 2]
FIG. 3 is a cross-sectional view showing the configuration of the sputtering apparatus 2 according to the second embodiment of the present invention. FIG. 4 is a plan view of the inside of the sputtering apparatus 2 shown in FIG. Specifically, FIG. 4 is a plan view of the inside of the sputtering apparatus 2 when viewed from the direction from the substrate W toward the antenna 20 in FIG. Further, in FIG. 4, the antenna 20, the substrate holding portion 70, and the vacuum exhaust devices 81 and 91 are omitted.

For convenience of explanation, the same reference numerals will be added to the members having the same functions as the members described in the above embodiment, and the description will not be repeated. As shown in FIG. 3, the sputtering apparatus 2 is different from the sputtering apparatus 1 in that the gas introduction pipe 40 is changed to the gas introduction pipe 40a and that the sputtering apparatus 120 is provided with the protective plate 120.

The gas introduction pipe 40a has a concave cross-section that extends in the same direction as the extension direction of the antenna 20 and has an open side facing the antenna 20. Specifically, the concave surface 42a of the gas introduction pipe 40a faces the antenna 20. The concave cross section of the gas introduction pipe 40a may be, for example, a U-shape, a shape such that the concave surface 42a is a curved surface, or a V-shape.

The adhesive plate 120 is provided on the open side of the gas introduction pipe 40a, and a plurality of gas introduction ports 121 are formed to prevent sputter particles released from the target 30 from adhering to the gas introduction pipe 40a. Is for. According to the above configuration, since the adhesive plate 120 is provided for the gas introduction pipe 40a, the adhesive plate 120 to which the sputter particles emitted from the target 30 are attached can be replaced to facilitate maintenance. it can.

Further, as shown in FIG. 4, the protective plate 120 covers the gas introduction pipe 40a when viewed from the direction from the substrate W toward the antenna 20. The protective plate 120 is arranged between two adjacent targets 30. That is, the protective plate 120 is arranged in the above-mentioned first space S1. The exhaust plate 50 is provided on the side opposite to the open side of the gas introduction pipe 40a, and a plurality of gas exhaust ports 51 are formed. The adhesive plate 120 is formed with a plurality of second gas exhaust ports 122 for exhausting the gas in the film forming chamber 11 to the plurality of gas exhaust ports 51.

According to the above configuration, since the second gas exhaust port 122 is formed in addition to the gas exhaust port 51, the gas exhaust amount can be adjusted in two steps of the gas exhaust port 51 and the second gas exhaust port 122. it can. Therefore, a structure for uniformly exhausting the gas can be easily realized.

The plurality of second gas exhaust ports 122 are formed at both ends of the protective plate 120 along the extending direction. The plurality of adhesion plates 120 extend in the same direction as the extension direction D1 of the antenna 20. A part of the second gas exhaust port 122 out of the plurality of second gas exhaust ports 122 is formed between the gas introduction port 121 and the target 30.

As shown in FIG. 4, the number of the second gas exhaust ports 122 formed on the protective plate 120 is larger than the number of gas introduction ports 121 formed on the protective plate 120. In addition to this, since the total opening area of the plurality of gas exhaust ports 51 is larger than the total opening area of the plurality of gas introduction ports 121, the gas is introduced into the film forming chamber 11 from the film forming chamber 11. It is possible to give priority to exhausting gas to the outside. Therefore, the differential pressure between the pressure in the film forming chamber 11 and the pressure in the exhaust chamber 15 can be secured, and the pressure in the film forming chamber 11 can be appropriately maintained.

<Modification example>
Next, a modified example of the sputtering apparatus 2 will be described with reference to FIG. FIG. 5 is a plan view of the inside of the sputtering apparatus 2 shown in FIG. 4 according to a modified example. A modification of the sputtering apparatus 2 is referred to as a sputtering apparatus 2a. As shown in FIG. 5, the sputtering device 2a is different from the sputtering device 2 in that two intermediate pipes 100 and two gas supply mechanisms 110 are provided.

In the sputtering apparatus 2a, two intermediate pipes 100 and two gas supply mechanisms 110 are provided on both sides of the vacuum vessel 10. On both sides of the vacuum vessel 10, the two intermediate pipes 100 are connected to a plurality of gas introduction pipes 40a via connection pipes 101, respectively. A gas supply mechanism 110 is connected to each of the two intermediate pipes 100. Further, three or more intermediate pipes 100 and gas supply mechanism 110 may be provided for the vacuum container 10, respectively. In this case, the plurality of intermediate pipes 100 are each connected to the plurality of gas introduction pipes 40a via the connection pipe 101.

As a result, even when the size of the sputtering apparatus 2a is large, that is, when the size of the vacuum vessel 10 is large, the gas can be sufficiently introduced into the film forming chamber 11. Therefore, since the gas is sufficiently introduced into the film forming chamber 11, the thin film can be appropriately formed on the substrate W.

The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and the embodiments obtained by appropriately combining the technical means disclosed in the different embodiments. Is also included in the technical scope of the present invention.

1, 2, 2a Sputtering device 10 Vacuum container 11 Formation chamber 20 Antenna 30 Target 31 Target holding part 40, 40a Gas introduction pipe 41, 121 Gas introduction port 50 Exhaust plate 51 Gas exhaust port 120 Adhesive plate 122 Second gas exhaust Mouth D1 Extension direction of antenna S1 First space S2 Second space

Claims (6)

A vacuum vessel in which a film forming chamber for accommodating the substrate is formed,
A plurality of antennas provided so as to face the substrate and generate plasma,
A plurality of targets provided on the side opposite to the substrate side with respect to the plurality of antennas and to be sputtered are provided.
In the film forming chamber, a plurality of gas introduction ports for introducing gas into the film forming chamber and a plurality of gas exhaust ports for exhausting gas in the film forming chamber are formed.
In any of the two adjacent targets among the plurality of targets, the antennas are arranged in a predetermined first positional relationship with respect to the first space formed between the two targets. At the same time, the sputtering apparatus is characterized in that the antennas are arranged in a predetermined second positional relationship with respect to the gas introduction port and the gas exhaust port arranged in the first space. The first positional relationship is a positional relationship in which the distance between the antenna and each of the two adjacent targets among the plurality of targets is the same.
The sputtering apparatus according to claim 1, wherein the second positional relationship is a positional relationship in which the antenna faces the gas introduction port and the gas exhaust port. The side where the gas exhaust port communicates with the film forming chamber in the second space so that the gas is exhausted through the second space formed between the gas introduction pipe and the target and the target holding portion. The sputtering apparatus according to claim 1 or 2, wherein the sputtering apparatus is formed on the opposite side to the same. A gas introduction pipe that extends in the same direction as the extension direction of the antenna and has a concave cross section with the side facing the antenna open.
A protective plate provided on the open side of the gas introduction pipe and formed with the plurality of gas introduction ports to prevent sputter particles released from the target from adhering to the gas introduction pipe. The sputtering apparatus according to any one of claims 1 to 3, further comprising. An exhaust plate provided on the side opposite to the open side of the gas introduction pipe and formed with the plurality of gas exhaust ports is further provided.
The sputtering apparatus according to claim 4, wherein a plurality of second gas exhaust ports for exhausting the gas in the film forming chamber to the plurality of gas exhaust ports are formed on the protective plate. The sputtering apparatus according to any one of claims 1 to 5, wherein the direction in which the plurality of gas introduction ports are lined up and the extension direction of the plurality of antennas are the same.

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