KR101626034B1 - Sputtering apparatus using ICP - Google Patents

Abstract

The present invention relates to a sputtering apparatus using an inductively coupled plasma method. The sputter apparatus using the inductively coupled plasma method of the present invention includes a process chamber; A dielectric window provided on top of the process chamber; A magnetic core installed on the dielectric window to enhance a magnetic field induced in the process chamber; An antenna coil wound on the magnetic core and supplied with a power source frequency from a power source to generate an electromotive force for plasma generation; And a target ionized by a plasma induced by the antenna coil, the target is ionized by the induced plasma and deposited on the substrate to be processed. According to the sputter apparatus using the inductively coupled plasma method of the present invention, the plasma can be induced in an inductively coupled manner and the target can be uniformly sputtered using the inductively coupled plasma. Also, since the plasma reaction part can be opened and closed in the process chamber with the hinge structure, the sputtered work can easily replace the spent target and the external discharge tube, and maintenance is easy. Also, since the plasma reaction part is opened and closed with respect to the hinge structure, access to the inside of the process chamber is easy. In addition, the target can be efficiently consumed through the uniformly induced plasma.

Sputter device, target, magnetic core, dielectric window

Description

[0001] The present invention relates to a sputtering apparatus using an inductively coupled plasma (ICP)

The present invention relates to a sputtering apparatus using an inductively coupled plasma method, and more particularly, to a sputtering apparatus using an inductively coupled plasma-assisted method for depositing a target sputtered on a substrate using an inductively coupled plasma will be.

BACKGROUND ART [0002] In a manufacturing process of a semiconductor device which is carried out on a plat panel display device or a wafer which is an object of an insulating substrate such as glass, an object such as an insulating substrate or a wafer A plurality of processes for depositing a thin film on the substrate. These thin films may be made of a conductor, a dielectric, or a semiconductor material. Circuits and electric field generating electrodes may be formed as a single layer, and multilayers may be laminated to form a switching element such as a thin film transistor (TFT). In this case, in particular, when the material to be deposited as a thin film is a metal, a sputtering apparatus can be used, which includes a first and a second electrode facing each other, a substrate facing each other and a target made of a material to be deposited do.

The principle and operation of thin film deposition of the sputtering apparatus will be briefly described. After forming a substrate and a target region in a vacuum, argon (Ar) is implanted into the vacuum region while negative voltage is applied to the first electrode and negative voltage is applied to the second electrode. And the like. The gas particles are then ionized in a plasma state, and the positively charged particles collide with the target as they accelerate to the second electrode. Through this collision, metal particles of the target material are scattered from the base material, and the scattered particles are accelerated in the anode direction and deposited on the substrate surface.

At this time, the target material should be selected according to the type of the substance to be deposited on the substrate and installed in the sputtering apparatus. In addition, sputtered targets must be replaced with new targets. Since the target is installed inside the sputtering apparatus, it can not be easily replaced. In addition, in order to induce the plasma to the target, the target is consumed only around the magnet installed on the target, and the use period of the target is reduced. Also, it was difficult to increase the decomposition efficiency of the target only by controlling the power supplied to the target.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a sputtering apparatus using an inductively coupled plasma-induced sputtering method capable of inducing a plasma in an inductively coupled mode and ionizing a target using an induced plasma to deposit the target on a target substrate.

According to an aspect of the present invention, there is provided a sputter apparatus using an inductively coupled plasma method. The sputter apparatus using the inductively coupled plasma method of the present invention includes a process chamber; A dielectric window provided on top of the process chamber; A magnetic core installed on the dielectric window to enhance a magnetic field induced in the process chamber; An antenna coil wound on the magnetic core and supplied with a power source frequency from a power source to generate an electromotive force for plasma generation; And a target ionized by a plasma induced by the antenna coil, the target is ionized by the induced plasma and deposited on the substrate to be processed.

In one embodiment, the magnetic core is horseshoe shaped.

In one embodiment, an impedance matcher is provided between the power source and the antenna coil to perform impedance matching.

In one embodiment, the antenna coil is connected in series or in parallel with the power source.

In one embodiment, the power supply includes a distribution circuit that distributes the frequency power provided from the power source to the antenna coil connected in parallel, and the distribution circuit controls the balance of the current supplied to the antenna coil connected in parallel And a current balance circuit.

In one embodiment, the target is installed in the dielectric window portion where the magnetic core is not installed.

In one embodiment, the sputtering apparatus includes a gas supply for supplying process gas into the process chamber.

In one embodiment, the dielectric window includes a gas injection hole for injecting the process gas supplied from the gas supply unit into the process chamber.

In one embodiment, a magnet is provided on one surface of the target to uniformly guide the plasma to the target.

In one embodiment, the magnet is either an electromagnet or a permanent magnet.

In one embodiment, the dielectric window is hinged to the process chamber.

The sputter apparatus of the present invention comprises: first and second vertical processing chambers; A magnetic core installed between the first and second vertical process chambers; An antenna coil wound around the magnetic core and supplied with a power source frequency from a power source to generate plasma within the first and second vertical process chambers; A dielectric window positioned at opposite ends of the magnetic core and configured to allow a magnetic field to flow from the antenna coil into the first and second vertical process chambers; And a target disposed in the dielectric window and ionized by a plasma induced by the antenna coil, the target is ionized by the induced plasma and deposited on the substrate to be processed.

In one embodiment, the magnetic core is one of a bar shape and an H shape.

According to the sputter apparatus using the inductively coupled plasma method of the present invention, the plasma can be induced in an inductively coupled manner and the target can be uniformly sputtered using the inductively coupled plasma. Also, since the plasma reaction part can be opened and closed in the process chamber with the hinge structure, the sputtered work can easily replace the spent target and the external discharge tube, and maintenance is easy. Also, since the plasma reaction part is opened and closed with respect to the hinge structure, access to the inside of the process chamber is easy. In addition, the target can be efficiently consumed through the uniformly induced plasma.

For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that in the drawings, the same members are denoted by the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

FIG. 1 is a cross-sectional view of a sputtering apparatus according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of a plasma reaction section of a sputtering apparatus.

As shown in FIGS. 1 and 2, the sputtering apparatus 100 of the present invention mainly comprises a process chamber 120 and a plasma reaction unit 140 installed on the process chamber 120. First, the plasma reaction unit 140 includes a gas supply unit 130, a dielectric window 190, a magnetic core 160, and a target 170. The gas supply unit 130 has a gas inlet 131 formed at an upper portion thereof and a plurality of gas outlets 132 formed at a lower portion thereof. A baffle 110 is provided to uniformly distribute the process gas to the plurality of gas outlets 132 inside. A process gas is provided from a gas source 154 through a gas inlet 131. The dielectric window 190 forms the lower surface of the plasma reaction part 140. Between the dielectric window 190 and the process chamber 120 is an insulating portion 144 for an electrically insulating structure. The dielectric window 190 is also provided with a gas injection hole 192 for supplying the process gas supplied from the gas supply unit 130 to the process chamber 120. The gas injection hole 192 is connected to the gas outlet 132 of the gas supply part 130 through the gas injection path 191. The gas supply part 130 and the insulating part 144 are connected to the side wall 143 having a height higher than the height of the magnetic core 160. The magnetic core 160 is mounted on top of the dielectric window 190. An antenna coil 162 is wound around a magnetic core 160 formed in a horseshoe shape to receive power from a power source 150.
The magnetic core also has a magnetic flux inlet facing the interior of the process chamber to enhance the magnetic field induced into the process chamber.
An impedance matcher 152 is provided between the power source 150 and the antenna coil 162 to perform impedance matching. The target 170 is mounted on the underside of the dielectric window 190. At this time, it is preferable that the target 170 is installed in a portion of the dielectric window 190 where the magnetic core 160 is not installed (to be positioned in the middle portion of the magnetic core of a horseshoe shape). This is because the magnetic field induced in the antenna coil 162 is strengthened through the magnetic core 160 and such magnetic field flows into the process chamber 120 through the dielectric window 190. The target 170 is decomposed into sputter ions by the plasma formed through the magnetic core 160 and the antenna coil 162. [ The decomposed sputter ions are deposited on the substrate to be processed 128 by evaporation.

The process chamber 120 has a substrate support 122 on which a substrate 128 is placed. At this time, the substrate to be processed 128 is placed parallel to the ground. The substrate support 122 may be biased coupled to a bias power source (not shown). A bias power source (not shown) is electrically coupled and biased to the substrate support 122 via an impedance matcher (not shown).

The dual bias structure of the substrate support 122 facilitates the generation of plasma within the sputter device and further improves plasma ion energy control to improve process productivity. Or a single bias structure. Or the substrate support 122 may be deformed into a structure having a zero potential without the supply of bias power. And the substrate support 122 may include an electrostatic chuck (not shown). Or the substrate support 122 may include a heater (not shown).

The substrate to be processed 128 is a substrate such as a wafer substrate, a glass substrate, a plastic substrate, or the like, for manufacturing various devices such as a semiconductor integrated circuit device, a flat panel display device, a solar cell, The process chamber 120 is connected to a vacuum pump 129.

The process of processing the substrate 128 using the sputtering apparatus 100 of the present invention will be briefly described. The sputtering apparatus 100 of the present invention is configured to process the substrate 128 through the gas inlet 131 of the gas supplying unit 130 A gas is injected into the process chamber 120. When electric power is supplied from the power supply source 150 to the antenna coil 162, a magnetic field is formed. At this time, the antenna coil 162 is wound on the magnetic core 160 so that the magnetic field formed is strengthened and the plasma discharge is performed inside the process chamber 120. The plasma decomposes the target 170 provided on the bottom surface of the dielectric window 190 into sputter ions. The decomposed sputter ions are deposited on a substrate 128 that is placed on a substrate support 122.

Here, the target 170 is provided with a magnet 175 on a surface opposed to a surface included in the process chamber 120. The magnet 175 facilitates the decomposition of the target 170 by the plasma by directing the plasma that is directed into the process chamber 120 into the target 170. Since the target 170 is comprised of metal, a dielectric window 190 is provided between the target 170 and the magnet 175. The plasma reactor 140 receives the cooling water from the cooling water supply source 179 and cools the magnetic core 160 heated.

The target 170 may be decomposed using plasma and may be decomposed by supplying power. The DC power 156a or the AC power 156b may be supplied to the target 170 or the DC power 156a and the AC power 156b may be mixed and supplied to the target 170. [ A shielding filter 158 is provided between the target 170 and the target power supply unit 156 to shield the power supplied from the power supply source 150 from entering the target power supply unit 156.

3 is a view showing a plasma reaction unit and a process chamber connected by a hinge.

As shown in FIG. 3, the plasma reactor 140 is connected to one side of the process chamber 120 by a hinge 180. The sputtering apparatus 100 according to the present invention can easily open and close the inside of the process chamber 120 because the plasma reaction unit 140 can be opened and closed with the hinge 180 structure. That is, when the inside of the process chamber 120 needs to be cleaned or maintained, the inside of the process chamber 120 can be easily accessed by opening and closing the plasma reaction unit 140.

4 is a view showing a magnetic core installed in a dielectric window of a sputtering apparatus.

As shown in FIG. 4, the sputtering apparatus 100 of the present invention can remove the gas supply unit 130 installed on the plasma reaction unit 140. When the gas supply unit 130 is removed from the plasma reaction unit 140, the magnetic core 160 installed in the dielectric window 190 is exposed. When the magnetic core 160 is cleaned or maintained, access to the magnetic core 160 is facilitated by removing the gas supply portion 130. Since the sputtering apparatus 100 is provided with a plurality of independent magnetic cores 160, the magnetic cores 160 can be individually replaced or maintained.

5 is a view showing a case where a stationary magnet is installed in a dielectric window.

As shown in FIG. 5, a magnet 175 is provided on one side of the dielectric window 190 to induce a plasma, which is induced into the process chamber 120, to the target 170. The plurality of magnets 175 may be arranged in the dielectric window 190 such that the N poles of the magnets 175 and the S poles of the other magnets 175 are adjacent to each other. The number of magnets 175 installed in the dielectric window 190 may be adjusted to control the amount of plasma introduced into the target 170. Here, the dielectric window 190 is provided with a gas injection hole 172 through which the process gas is passed. The target 170 is provided on the lower surface of the window dielectric without the magnetic core 160. The magnet 175 used in the sputtering apparatus 100 of the present invention is composed of either an electromagnet or a permanent magnet.

FIG. 6 is a plan view showing a dielectric window provided with a plate-shaped target, and FIG. 7 is a plan view showing a dielectric window provided with a target piece.

As shown in FIG. 6, a plurality of plate-shaped targets 176 may be provided in the dielectric window. The plate-shaped targets 176 are provided at predetermined intervals to allow the magnetic core 160 to be installed in the dielectric window 190 where the plate-like target 176 is not provided. A gas injection hole 192 is included in the dielectric window 190 where the plate-shaped target 176 is not provided.

As shown in FIG. 7, a plurality of target pieces 177 may be provided in the dielectric window 190. The target pieces 177 are arranged in a line at predetermined intervals so that the magnetic core 160 can be installed in the dielectric window 190 in which the target piece 177 is not provided. Also, a gas injection hole 192 is intensively provided in the peripheral dielectric window 190 provided with the target piece 177 so that the plasma can be densely guided around the target piece 177 by the induced magnetic field and the process gas .

 FIG. 8 is a view illustrating a state where an antenna coil and a power source are connected in series, and FIG. 9 is a diagram illustrating a state where an antenna coil and a power source are connected in parallel.

8, the power source 150 is connected in series with an antenna coil 162 wound on a plurality of magnetic cores 160. [ That is, the power supplied from the power source 150 is supplied along the antenna coil 162 connected in series. 9, the power supply source 150 is connected in parallel with the antenna coil 162 wound on the plurality of magnetic cores 160. As shown in FIG. At this time, the current can be distributed through the current distribution circuit 182, and preferably, the current balance circuit is used to constitute the distribution circuit.

10 is a cross-sectional view of a sputter apparatus having a vertical dual chamber according to a second embodiment of the present invention.

10, the sputter apparatus 300 includes a first vertical processing chamber 310 and a second vertical processing chamber 320. The first and second vertical processing chambers 310 and 320 are provided with a substrate support 322 on the side thereof to process and process the substrate 328 vertically. A plasma reaction part 140 is provided between the first vertical processing chamber 310 and the second vertical processing chamber 320. The plasma reaction unit 140 receives the process gas through the common gas supply unit 330. In this case, the first and second vertical process chambers 310 and 320 are provided with a magnetic core 160 and a dielectric window 190, respectively, for inducing a plasma to induce an independent plasma into each process chamber. Power and process gases may also be supplied separately or commonly to the first vertical process chamber 310 and the second vertical process chamber 320, respectively. The power supplied to the target 170 may also be supplied separately or commonly to the first and second vertical process chambers 310 and 320. The first and second vertical process chambers 310 and 320 and the plasma reaction unit 140 are installed in a hinge structure in the same manner as in the first embodiment.

11 is a cross-sectional view of a sputtering apparatus in which a bar-shaped magnetic core is installed between vertical dual chambers.

As shown in FIG. 11, the sputtering apparatus 300 includes a bar-shaped magnetic core 360 having a bar shape between the first vertical processing chamber 310 and the second vertical processing chamber 320. The antenna coil 162 is wound around the bar-shaped magnetic core 360. At this time, two or more bar magnetic cores 360 are provided between the first and second vertical process chambers 310 and 320 to enhance the magnetic field generated by the antenna coil 162

 12 is a cross-sectional view of a sputtering apparatus in which an H-shaped magnetic core is installed between vertical dual chambers.

12, the sputtering apparatus 300 is provided with a magnetic core 380 having an H-shape between the first vertical processing chamber 310 and the second vertical processing chamber 320. In this magnetic core 380, The coil 380 is formed with a center core 384 between the two bar magnetic cores 382. The antenna coil 162 is wound on the center core 384 so that the magnetic field generated by the antenna coil 162 And is strengthened between the two bar magnetic cores 382.

The embodiments of the sputtering apparatus using the inductively coupled plasma method of the present invention described above are illustrative only and various modifications and equivalent other embodiments can be made by those skilled in the art. You can see that it is. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

1 is a cross-sectional view of a sputtering apparatus according to a first embodiment of the present invention.

2 is a cross-sectional view of the plasma reaction part of the sputtering apparatus.

3 is a view showing a plasma reaction unit and a process chamber connected by a hinge.

4 is a view showing a magnetic core installed in a dielectric window of a sputtering apparatus.

5 is a view showing a case where a stationary magnet is installed in a dielectric window.

6 is a plan view showing a dielectric window provided with a plate-shaped target.

7 is a plan view showing a dielectric window provided with a target piece.

8 is a diagram showing a state in which an antenna coil and a power supply source are connected in series.

9 is a view showing a state in which an antenna coil and a power supply source are connected in parallel.

10 is a cross-sectional view of a sputter apparatus having a vertical dual chamber according to a second embodiment of the present invention.

11 is a cross-sectional view of a sputtering apparatus in which a bar-shaped magnetic core is installed between vertical dual chambers.

12 is a cross-sectional view of a sputtering device in which an H-shaped magnetic core is installed between vertical dual chambers.

Description of the Related Art [0002]

100, 300: sputtering apparatus 120: process chamber

122, 322: substrate support rods 128, 328:

129: pump 130: gas supply part

131: gas inlet 132: gas outlet

140: Plasma reaction part 143: Side wall

144: Insulation part 150: Power source

152: impedance matcher 154: gas supply source

156: target power supply unit 156a: DC power source

156b: AC power source 158: Shielding filter

160, 380: magnetic core 162: antenna coil

170: target 175: magnet

176: plate-shaped target 177: target piece

179: Cooling water source 180: Hinge

182: Current distribution circuit 190: Dielectric window

191: Gas injection path 192: Gas injection hole

310: first vertical processing chamber 320: second vertical processing chamber

330: common gas supply unit 110:

360: bar type magnetic core 382: bar type core

384: center core

Claims (13)

A process chamber having a plasma processing space; A dielectric window mounted on top of the process chamber; A plurality of magnetic cores provided on one surface of the dielectric window such that a magnetic flux entrance is directed to the inside of the process chamber to enhance a magnetic field induced into the process chamber; A plurality of antenna coils wound on the magnetic core to receive an electric power from a power source to generate electromotive force for plasma generation; A plurality of targets disposed on a lower surface of the dielectric window; And a plurality of magnets provided on one surface of the dielectric window in correspondence with the target, Wherein the target is ionized by the plurality of antenna coils and is deposited on the substrate to be processed. The method according to claim 1, Wherein the magnetic core has a horseshoe shape and the magnet is disposed between the horseshoe shapes of the magnetic core. The method according to claim 1, And an impedance matching unit formed between the power supply source and the antenna coil to perform impedance matching. The method according to claim 1, Wherein the antenna coil is connected in series or in parallel with the power source. 5. The method of claim 4, And a distribution circuit for distributing power supplied from the power source to the antenna coil connected in parallel, wherein the distribution circuit includes a current balance circuit for adjusting a balance of current supplied to the antenna coil connected in parallel A sputtering apparatus using an inductively coupled plasma method. The method according to claim 1, Wherein the target is installed in a portion of the dielectric window where the magnetic core is not installed. The method according to claim 1, Wherein the sputtering apparatus includes a gas supply unit for supplying a process gas into the process chamber. 8. The method of claim 7, Wherein the dielectric window includes a gas injection hole for injecting the process gas supplied from the gas supply unit into the process chamber. delete The method according to claim 1, Wherein the magnet is composed of an electromagnet or a permanent magnet. The method according to claim 1, Wherein the dielectric window is hinged to the process chamber. A first and a second vertical processing chamber having a plasma processing space; A plurality of dielectric windows configured to introduce a magnetic field into the first and second vertical process chambers; A plurality of magnetic cores installed between the first and second vertical process chambers such that magnetic flux entrances are directed toward the interior of the first and second vertical process chambers; A plurality of antenna coils wound on the magnetic core to receive an electric power from a power source to generate electromotive force for plasma generation; A plurality of targets disposed on one side of the dielectric window and being ionized by a plasma induced within the first and second vertical process chambers; And a plurality of magnets provided on one side of the dielectric window in correspondence with the target, Wherein the target is ionized by the plurality of antenna coils and is deposited on the substrate to be processed. 13. The method of claim 12, Wherein the magnetic core is one of a bar shape and an H shape.

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