JP7172839B2 - Sputtering equipment - Google Patents

Description

The present invention relates to a sputtering apparatus.

A conventional sputtering apparatus is known in which a magnetic field is formed on the surface of a target to generate plasma, and ions in the plasma collide with the target, thereby ejecting sputtered particles from the target. As such a sputtering apparatus, for example, a sputtering apparatus disclosed in Japanese Patent Application Laid-Open No. 2002-300010 can be cited.

The sputtering apparatus disclosed in Patent Literature 1 has a target device in which a voltage is applied between a set of two targets that are adjacent to each other. The target device has partition walls arranged to face the side surfaces of a pair of targets, a gas introduction port is formed between the partition walls and the targets, and a main exhaust port is formed in the bottom surface of the vacuum chamber. A reaction gas introduced from a gas inlet passes through a pair of targets and is exhausted from a main exhaust port.

Japanese Patent Application Laid-Open No. 2013-49884 (published on March 14, 2013)

In the sputtering apparatus disclosed in Patent Document 1, a gas introduction port is formed between the partition wall and the target, but no gas introduction port is formed between a pair of targets. A main exhaust port is formed between a pair of targets, but no main exhaust port is formed between the partition wall and the target.

For this reason, in the sputtering apparatus disclosed in Patent Document 1, the pressure of the gas supplied to the target in the vacuum chamber cannot be sufficiently uniform, and the thin film formed on the substrate is sufficiently uniform. I have a problem that I can't. An object of one embodiment of the present invention is to uniformize the pressure of a gas supplied to a target in a deposition chamber to improve the uniformity of a thin film formed on a substrate.

In order to solve the above-described problems, a sputtering apparatus according to an aspect of the present invention includes a vacuum vessel in which a film formation chamber in which a substrate is accommodated is formed, and a vacuum vessel facing the substrate. a plurality of antennas to be generated; and a plurality of targets to be sputtered, provided on a side opposite to the substrate side with respect to the plurality of antennas; A plurality of gas introduction ports for introducing gas and a plurality of gas exhaust ports for exhausting gas from the film formation chamber are formed, and any one of the two adjacent targets among the plurality of targets is provided. Also, the antenna is arranged in a predetermined first positional relationship with respect to a first space formed between the two targets, and the gas inlet is arranged in the first space. and the antenna is arranged in a predetermined second positional relationship with respect to the gas exhaust port.

According to the above configuration, since the positional relationship between the antenna, the target, the gas introduction port, and the gas exhaust port is constant in any of the two adjacent targets, the gas supplied to the target in the film formation chamber is reduced. Pressure can be made uniform. Thereby, the uniformity of the thin film formed on the substrate can be improved.

The first positional relationship is a positional relationship in which the distance between the antenna and each of two adjacent targets among the plurality of targets is the same, and the second positional relationship is a positional relationship in which the antenna is positioned between the gas and the gas. The positional relationship may be such that the introduction port and the gas exhaust port face each other. According to the above configuration, the distances between the antenna and each of the two adjacent targets are the same, and the antenna faces the gas inlet and the gas exhaust port. The pressure of the supplied gas can be made uniform.

A side where the gas exhaust port communicates with the film forming chamber in the second space so that the gas is exhausted through the second space formed between the gas introduction pipe and the target and the target holder. may be formed on the opposite side. According to the above configuration, the gas introduced from the gas introduction port is exhausted through the second space formed between the gas introduction pipe and the target and the target holder, so that the gas does not enter the deposition chamber. spread evenly. Thereby, the uniformity of the thin film formed on the substrate can be improved in the deposition chamber.

The sputtering apparatus includes a gas introduction pipe extending in the same direction as the extension direction of the antenna and having a concave cross-sectional shape with an open side facing the antenna, and provided on the open side of the gas introduction pipe. and an anti-adhesion plate formed with the plurality of gas inlets for preventing sputtered particles emitted from the target from adhering to the gas inlet pipe. According to the above configuration, since the anti-adhesion plate is provided for the gas introduction pipe, maintenance can be easily performed by replacing the anti-adhesion plate to which the sputtered particles emitted from the target adhere.

The sputtering apparatus further includes an exhaust plate provided on the side opposite to the open side of the gas introduction pipe and having the plurality of gas exhaust ports formed thereon, and the deposition-preventing plate is provided with the gas in the deposition chamber. A plurality of second gas outlets may be formed for discharging to the plurality of gas outlets. According to the above configuration, since the second gas exhaust port is formed in addition to the gas exhaust port, the gas exhaust amount can be adjusted in two steps, the gas exhaust port and the second gas exhaust port. Therefore, a structure for uniformly exhausting gas can be easily realized.

A direction in which the plurality of gas introduction ports are arranged may be the same as a direction in which the plurality of antennas are extended. According to the above configuration, the gas introduced into the film forming chamber is uniformly supplied to the antenna. Therefore, since the plasma generated by the antenna is uniformly diffused on the surface of the target, the uniformity of the thin film formed on the substrate can be improved in the deposition chamber.

According to one aspect of the present invention, the pressure of the gas supplied to the target in the deposition chamber can be made uniform, and the uniformity of the thin film formed on the substrate can be improved.

1 is a cross-sectional view showing the configuration of a sputtering apparatus according to Embodiment 1 of the present invention; FIG. FIG. 2 is a plan view of the inside of the sputtering apparatus shown in FIG. 1; FIG. 3 is a cross-sectional view showing the configuration of a sputtering apparatus according to Embodiment 2 of the present invention; 4 is a plan view of the interior of the sputtering apparatus shown in FIG. 3; FIG. FIG. 5 is a plan view of the inside according to a modification of the sputtering apparatus shown in FIG. 4;

[Embodiment 1]
<Structure of Sputtering Apparatus 1>
FIG. 1 is a cross-sectional view showing the configuration of a sputtering apparatus 1 according to Embodiment 1 of the present invention. FIG. 2 is a plan view of the interior of the sputtering apparatus 1 shown in FIG. Specifically, FIG. 2 is a plan view of the inside of the sputtering apparatus 1 when viewed from the direction toward the antenna 20 from the substrate W in FIG. Also, in FIG. 2, the substrate holder 70 and the vacuum exhaust devices 81 and 91 are omitted. Further, in FIGS. 1 to 5, member numbers are omitted for shapes that can be identified in the drawings.

As shown in FIG. 1, the sputtering apparatus 1 includes a vacuum vessel 10, a plurality of antennas 20, a plurality of targets 30, a plurality of target holders 31, a plurality of gas introduction pipes 40, an exhaust plate 50, A plurality of insulating portions 60 , a substrate holding portion 70 , and evacuation devices 81 and 91 are provided.

The sputtering apparatus 1 forms a film on a substrate W by sputtering a target 30 using inductively coupled plasma. Here, the substrate W is, for example, a glass substrate for a flat panel display such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, or the like.

A vacuum container 10 is a container that is evacuated and that is supplied with gas. Further, the vacuum container 10 is a container in which a film forming chamber 11 in which the substrate W is accommodated is formed. The film forming chamber 11 is formed by being surrounded by the side wall 12 of the vacuum vessel 10, the bottom surface 13 of the vacuum vessel 10, the substrate holder 70, the multiple targets 30, and the multiple gas introduction pipes 40. . A plurality of gas introduction ports 41 and a plurality of gas exhaust ports 51 are formed in the film forming chamber 11 . The gas introduction port 41 and the gas exhaust port 51 will be described later.

The plurality of antennas 20 are ICP (Inductively Coupled Plasma) antennas that are provided in the film formation chamber 11 so as to face the substrate W and generate plasma. Specifically, the plurality of antennas 20 are arranged in parallel on the same plane along the surface of the substrate W on the surface side of the substrate W in the deposition chamber 11 . For example, the multiple antennas 20 are arranged substantially parallel to the substrate W surface.

A portion of each antenna 20 located inside the vacuum vessel 10 is covered with a straight tubular insulating cover 21 . In addition, as shown in FIG. 2, each antenna 20 has a linear shape in a plan view and has the same configuration. Here, the planar view means the case of viewing from the substrate W toward the antenna 20 .

A plurality of targets 30 are provided on the opposite side of the substrate W with respect to the plurality of antennas 20, and are targets of sputtering. Each target 30 has a rectangular flat plate shape in plan view, and is made of an oxide semiconductor material such as InGaZnO, for example. Each target holding part 31 holds the target 30 so as to face the substrate W held by the substrate holding part 70 . The target holding part 31 is provided on the exhaust plate 50 on the side opposite to the side facing the substrate W via an insulating part 60 having a vacuum sealing function.

Each of the plurality of gas introduction pipes 40 extends in the same direction as the extension direction D1 of the antenna 20, as shown in FIG. Each gas introduction pipe 40 is connected via a connection pipe 101 to an intermediate pipe 100 extending in the same direction as the direction D2 in which the plurality of gas introduction pipes 40 are arranged. That is, the connection pipe 101 connects each gas introduction pipe 40 and the intermediate pipe 100 . The size of the plurality of gas introduction pipes 40 may be appropriately determined according to the amount of gas to be introduced into the film forming chamber 11 .

A gas supply mechanism 110 is connected to the central portion of the intermediate pipe 100 in the direction D2. The gas supply mechanism 110 supplies a mixed gas of a reactive gas such as O ₂ (oxygen) or N ₂ (nitrogen) and a sputtering gas such as Ar (argon) to the inside of the intermediate pipe 100 . The mixed gas supplied to the inside of the intermediate pipe 100 is supplied to the inside of the gas introduction pipe 40 through the connection pipe 101 . The mixed gas supplied into the gas introduction pipe 40 is introduced from the gas introduction port 41 toward the substrate W side of the target 30 in the film forming chamber 11 .

Note that the gas supply mechanism 110 may supply only the reactive gas to the interior of the intermediate pipe 100 . In this case, the reactive gas supplied to the interior of the intermediate pipe 100 is supplied to the interior of the gas introduction pipe 40 through the connection pipe 101 . The reactive gas supplied into the gas introduction pipe 40 is introduced from the gas introduction port 41 toward the substrate W side of the target 30 in the film formation chamber 11 .

When the gas supply mechanism 110 supplies only the reactive gas to the interior of the intermediate pipe 100 , a gas introduction port (see FIG. not shown) may be formed. In this case, the sputtering gas is introduced into the film forming chamber 11 through the gas introduction port by a gas supply mechanism (not shown) that supplies the sputtering gas. The gas supply mechanism is connected to the vacuum vessel 10 .

The plurality of gas introduction pipes 40 are arranged so as to extend in a direction parallel to the longitudinal direction of the plurality of targets 30 in plan view. Each gas introduction pipe 40 is formed with a plurality of gas introduction ports 41 for introducing gas into the film forming chamber 11 . The shape of the plurality of gas introduction ports 41 is preferably circular, but is not limited to this, and may be, for example, triangular or quadrangular.

The direction in which the plurality of gas introduction ports 41 are arranged is the same as the extension direction of the plurality of antennas 20 , and the plurality of gas introduction ports 41 are formed along the antenna 20 . According to the above configuration, the gas introduced into the film forming chamber 11 is uniformly supplied to the antenna 20 . Therefore, the plasma generated by the antenna 20 is uniformly diffused on the surface of the target 30, so that the uniformity of the thin film formed on the substrate W in the film forming chamber 11 can be improved.

The exhaust plate 50 is provided on the opposite side of the gas introduction pipe 40 from the substrate W side, and has a plurality of gas exhaust ports 51 for exhausting the gas in the film forming chamber 11 . The targets 30 and the gas introduction pipes 40 are alternately arranged on the exhaust plate 50 . The plurality of gas exhaust ports 51 are respectively formed along the extending direction of the gas introduction pipe 40 and formed on both sides of the gas introduction pipe 40 .

The total opening area of the plurality of gas exhaust ports 51 is larger than the total opening area of the plurality of gas introduction ports 41, as shown in FIG. As a result, the exhaust of the gas from the film forming chamber 11 to the outside can be given priority over the introduction of the gas into the film forming chamber 11 . Therefore, the pressure difference between the pressure inside the film forming chamber 11 and the pressure inside the exhaust chamber 15 can be ensured, and the pressure inside the film forming chamber 11 can be appropriately maintained.

Further, the gas exhaust port 51 is formed in the film formation chamber in the second space S2 so that the gas is exhausted through the second space S2 formed between the gas introduction pipe 40 and the target 30 and the target holder 31. It is formed on the side opposite to the side communicating with 11 .

According to the above configuration, the gas introduced from the gas introduction port 41 is exhausted through the second space S2 formed between the gas introduction pipe 40 and the target 30 and the target holder 31. The gas spreads evenly in the membrane chamber 11 . Thereby, the uniformity of the thin film formed on the substrate W can be improved in the film forming chamber 11 . The gas exhaust port 51 is also formed on the opposite side of the space between the side wall 12 of the vacuum chamber 10 and the gas introduction pipe 40 to the side communicating with the film formation chamber 11 .

Here, in any of the two adjacent targets 30 among the plurality of targets 30, the antenna 20 has a predetermined first positional relationship with respect to the first space S1 formed between the two targets 30. are placed in Further, the antenna 20 is arranged in a predetermined second positional relationship with respect to the gas introduction port 41 and the gas exhaust port 51 arranged in the first space S1.

According to the above configuration, the positional relationship between the antenna 20, the target 30, the gas introduction port 41, and the gas exhaust port 51 is constant in any of the two adjacent targets 30. FIG. Therefore, the pressure of the gas supplied to the target 30 in the film forming chamber 11 can be made uniform. Thereby, the uniformity of the thin film formed on the substrate W can be improved.

Specifically, the gas utilization efficiency can be improved, and the uniformity of the thickness and quality of the thin film formed on the substrate W can be improved. Here, in particular, consider the case where the target 30 is an oxide semiconductor material such as InGaZnO.

In this case, when controlling the oxygen partial pressure, when changing the oxygen partial pressure in a multilayer structure, or when forming a thin film having a crystalline structure on the substrate W, the pressure of the gas supplied to the target 30 is uniform. become. Thereby, the resistivity and crystallinity of the thin film formed on the substrate W can be made extremely uniform. Also, the partial pressure of the reactive gas in the direction D2 can be made uniform for all the targets 30 .

Furthermore, the first positional relationship is a positional relationship in which the distance between the antenna 20 and each of the two adjacent targets 30 among the plurality of targets 30 is the same, and the second positional relationship is a positional relationship in which the antenna 20 is a positional relationship facing the gas introduction port 41 and the gas exhaust port 51 . According to the above configuration, the pressure of the gas supplied to each of the two adjacent targets 30 can be made uniform.

Further, the second positional relationship is preferably a positional relationship in which the gas introduction port 41 is parallel to the direction from the substrate W toward the antenna 20 and arranged on a straight line passing through the antenna 20. . Thereby, the gas introduced from the gas introduction port 41 can pass through the antenna 20 and be supplied to the target 30 .

The substrate holding part 70 is a holder that holds the substrate W in the film forming chamber 11 so as to be horizontal, for example. A main exhaust port 80 is formed in the center of the upper surface 14 of the vacuum vessel 10 in plan view. The main exhaust port 80 is formed to exhaust the gas introduced into the film formation chamber 11 from the gas introduction port 41 to the outside of the film formation chamber 11 .

The gas in the film forming chamber 11 exhausted from the plurality of gas exhaust ports 51 is exhausted to the outside of the vacuum chamber 10 from the main exhaust port 80 by a vacuum exhaust device 81 such as a vacuum pump. The evacuation device 81 is connected to the vacuum vessel 10 . A secondary exhaust port 90 is formed in the bottom surface 13 of the vacuum container 10 . The sub-exhaust port 90 is formed to exhaust the gas in the film forming chamber 11 to the outside of the film forming chamber 11 before and after film formation is performed on the substrate W. As shown in FIG. Before and after film formation is performed on the substrate W, the gas in the film forming chamber 11 is exhausted to the outside of the vacuum vessel 10 from the auxiliary exhaust port 90 by a vacuum exhaust device 91 such as a vacuum pump. The evacuation device 91 is connected to the vacuum vessel 10 .

A plurality of main exhaust ports 80 may be formed on the upper surface 14 of the vacuum vessel 10 . Thereby, even when the size of the sputtering apparatus 1 is large, that is, even when the size of the vacuum vessel 10 is large, the gas in the film forming chamber 11 can be sufficiently exhausted. Moreover, since the gas in the film forming chamber 11 can be uniformly exhausted, the pressure of the gas supplied to the target 30 in the film forming chamber 11 can be made uniform. A plurality of sub-exhaust ports 90 may also be formed in the bottom surface 13 of the vacuum vessel 10 .

Here, the plurality of gas exhaust ports 51 may be formed in the exhaust plate 50 such that the number, size, and arrangement thereof are appropriately determined so that the gas exhaust speeds are equal. For example, the greater the distance from the main exhaust port 80, the greater the number of gas exhaust ports 51 or the larger the gas exhaust ports 51 may be. Also, the smaller the distance from the main exhaust port 80, the smaller the number of the gas exhaust ports 51 or the smaller the gas exhaust ports 51 may be. In FIG. 2, the configuration in which the number, size, and arrangement of the gas exhaust ports 51 are uniform is an example.

The number, size, and arrangement of the plurality of gas introduction ports 41 are appropriately determined so that the gas can be introduced into the film formation chamber 11 from each gas introduction port 41 at an equal flow rate. may be formed in For example, as the distance from the gas supply mechanism 110 increases, the number of gas introduction ports 41 may be increased or the size of the gas introduction ports 41 may be increased. Also, the smaller the distance from the gas supply mechanism 110, the smaller the number of the gas introduction ports 41 or the smaller the gas introduction ports 41 may be. In FIG. 2, the configuration in which the number, size, and arrangement of the gas introduction ports 41 are uniform is an example.

[Embodiment 2]
FIG. 3 is a cross-sectional view showing the configuration of a sputtering apparatus 2 according to Embodiment 2 of the present invention. FIG. 4 is a plan view of the interior of the sputtering apparatus 2 shown in FIG. Specifically, FIG. 4 is a plan view of the inside of the sputtering apparatus 2 when viewed from the direction toward the antenna 20 from the substrate W in FIG. Also, in FIG. 4, the antenna 20, the substrate holder 70, and the evacuation devices 81 and 91 are omitted.

For convenience of description, members having the same functions as those of the members described in the above embodiments are denoted by the same reference numerals, and description thereof will not be repeated. As shown in FIG. 3, the sputtering apparatus 2 differs from the sputtering apparatus 1 in that the gas introduction pipe 40 is changed to a gas introduction pipe 40a and that an anti-adhesion plate 120 is provided.

The gas introduction pipe 40 a extends in the same direction as the extension direction of the antenna 20 and has a concave cross-sectional shape with an open side facing the antenna 20 . Specifically, the concave surface 42 a of the gas introduction pipe 40 a faces the antenna 20 . The cross-sectional concave shape of the gas introduction pipe 40a may be, for example, a U-shaped shape, a shape in which the concave surface 42a is curved, or a V-shaped shape.

The anti-adhesion plate 120 is provided on the open side of the gas introduction pipe 40a and has a plurality of gas introduction ports 121 to prevent sputtered particles emitted from the target 30 from adhering to the gas introduction pipe 40a. It is for According to the above configuration, since the anti-adhesion plate 120 is provided for the gas introduction pipe 40a, maintenance can be easily performed by replacing the anti-adhesion plate 120 to which the sputtered particles emitted from the target 30 adhere. can.

4, the anti-adhesion plate 120 covers the gas introduction pipe 40a when viewed from the substrate W toward the antenna 20. As shown in FIG. The anti-adhesion plate 120 is arranged between two adjacent targets 30 . In other words, the anti-adhesion plate 120 is arranged in the above-described first space S1. The exhaust plate 50 is provided on the side opposite to the open side of the gas introduction pipe 40a, and has a plurality of gas exhaust ports 51 formed therein. The deposition prevention plate 120 is formed with a plurality of second gas exhaust ports 122 for exhausting the gas inside the film forming chamber 11 to the plurality of gas exhaust ports 51 .

According to the above configuration, since the second gas exhaust port 122 is formed in addition to the gas exhaust port 51, the gas exhaust amount can be adjusted in two steps, the gas exhaust port 51 and the second gas exhaust port 122. can. Therefore, a structure for uniformly exhausting gas can be easily realized.

A plurality of second gas exhaust ports 122 are formed at both ends of the attachment-preventing plate 120 along the extending direction. The multiple anti-attachment plates 120 extend in the same direction as the extension direction D1 of the antenna 20 . Some of the plurality of second gas exhaust ports 122 are formed between the gas introduction port 121 and the target 30 .

The number of second gas exhaust ports 122 formed in the anti-adhesion plate 120 is greater than the number of gas introduction ports 121 formed in the anti-adhesion plate 120, as shown in FIG. In addition to this, since the total opening area of the plurality of gas exhaust ports 51 is larger than the total opening area of the plurality of gas introduction ports 121 , the gas from the film formation chamber 11 is more likely to be discharged from the film formation chamber 11 than introduced into the film formation chamber 11 . Priority can be given to exhausting gas to the outside. Therefore, the pressure difference between the pressure inside the film forming chamber 11 and the pressure inside the exhaust chamber 15 can be ensured, and the pressure inside the film forming chamber 11 can be appropriately maintained.

<Modification>
Next, a modified example of the sputtering device 2 will be described with reference to FIG. FIG. 5 is a plan view of the interior of a modification of the sputtering apparatus 2 shown in FIG. A modification of the sputtering device 2 is called a sputtering device 2a. As shown in FIG. 5, the sputtering apparatus 2a differs from the sputtering apparatus 2 in that two intermediate pipes 100 and two gas supply mechanisms 110 are provided.

In the sputtering apparatus 2a, two intermediate pipes 100 and two gas supply mechanisms 110 are provided on both sides of the vacuum vessel 10, respectively. On both sides of the vacuum vessel 10, two intermediate pipes 100 are connected to a plurality of gas introduction pipes 40a via connection pipes 101, respectively. A gas supply mechanism 110 is connected to each of the two intermediate pipes 100 . Further, three or more intermediate pipes 100 and three or more gas supply mechanisms 110 may be provided for each vacuum vessel 10 . In this case, the plurality of intermediate pipes 100 are connected to the plurality of gas introduction pipes 40a via connection pipes 101, respectively.

Thereby, even when the size of the sputtering device 2a is large, that is, even when the size of the vacuum chamber 10 is large, the gas can be sufficiently introduced into the film forming chamber 11 . Therefore, the thin film can be properly formed on the substrate W because the gas is sufficiently introduced into the film forming chamber 11 .

The present invention is not limited to the above-described embodiments, but can be modified in various ways within the scope of the claims, and can be obtained by appropriately combining technical means disclosed in different embodiments. is also included in the technical scope of the present invention.

Reference Signs List 1, 2, 2a sputtering apparatus 10 vacuum vessel 11 film forming chamber 20 antenna 30 target 31 target holder 40, 40a gas introduction pipe 41, 121 gas introduction port 50 exhaust plate 51 gas exhaust port 120 anti-adhesion plate 122 second gas exhaust Mouth D1 Extension direction of antenna S1 First space S2 Second space

Claims (6)

a vacuum container inside which is formed a film forming chamber in which the substrate is accommodated;
a plurality of antennas provided to face the substrate and generating plasma;
a plurality of targets to be sputtered, which are provided on a side opposite to the substrate side with respect to the plurality of antennas;
The film formation chamber is provided with a plurality of gas introduction ports for introducing gas into the film formation chamber, and a plurality of gas exhaust ports for exhausting gas from the film formation chamber,
In any two adjacent targets among the plurality of targets, the antenna is arranged in a predetermined first positional relationship with respect to a first space formed between the two targets. and the antenna is arranged in a predetermined second positional relationship with respect to the gas introduction port and the gas exhaust port arranged in the first space. the first positional relationship is a positional relationship in which distances between the antenna and each of two adjacent targets among the plurality of targets are the same;
2. A sputtering apparatus according to claim 1, wherein said second positional relationship is a positional relationship in which said antenna faces said gas introduction port and said gas exhaust port. A side where the gas exhaust port communicates with the film forming chamber in the second space so that the gas is exhausted through the second space formed between the gas introduction pipe and the target and the target holder. 3. The sputtering apparatus according to claim 1, wherein the sputtering apparatus is formed on the side opposite to the . a gas introduction pipe extending in the same direction as the extension direction of the antenna and having a concave cross-sectional shape with an open side facing the antenna;
an anti-adhesion plate provided on the open side of the gas introduction pipe, formed with the plurality of gas introduction ports, and preventing sputtered particles emitted from the target from adhering to the gas introduction pipe; 4. The sputtering apparatus according to any one of claims 1 to 3, further comprising: further comprising an exhaust plate provided on the side opposite to the open side of the gas introduction pipe and formed with the plurality of gas exhaust ports;
5. The sputtering apparatus according to claim 4, wherein the deposition prevention plate is formed with a plurality of second gas exhaust ports for exhausting the gas in the film forming chamber to the plurality of gas exhaust ports. 6. The sputtering apparatus according to claim 1, wherein the direction in which the plurality of gas introduction ports are arranged is the same as the direction in which the plurality of antennas are extended.

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