JP2006328456A - Sputtering apparatus and sputtering method, and device and method for manufacturing plasma display panel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of preventing degradation of the film deposition rate even when a target is continuously used, a PDP (plasma display panel) manufacturing device using the sputtering apparatus, a sputtering method, and a method for manufacturing a plasma display panel. <P>SOLUTION: A vacuum chamber 12 and a metal plate storage chamber 13 are provided in a sputtering apparatus 11. A target 15 and a substrate 17 are mounted in the vacuum chamber 12, and a collimator 18 is arranged between the target 15 and the substrate 17. The collimator 18 is constituted by attachably/detachably laminating three metal plates 19, and a plurality of truncated conical holes 20 are formed so as to penetrate the three metal plates 19. When the target 15 is slightly consumed, the metal plate 19 arranged closest to the target 15 side is detached from the collimator 18, and moved to the metal plate storage chamber 13. Sputtering is continued by using the two remaining metal plates 19. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a sputtering apparatus in which atoms constituting a target are separated from the target by causing ions to collide with the target and deposited on a substrate, and a plasma display panel (hereinafter also referred to as PDP) using the sputtering apparatus. ) Manufacturing apparatus, sputtering method and PDP manufacturing method.

  FIG. 1 is a cross-sectional view showing a conventional sputtering apparatus. As shown in FIG. 1, a conventional sputtering apparatus 101 is provided with a vacuum chamber 102, and a target holder 103 is provided inside the vacuum chamber 102. A target 111 is held by the target holder 103. A magnet 104 is disposed on the opposite side of the target 111 as viewed from the target holder 103. On the other hand, a substrate 112 is arranged at a position facing the target 111 in the vacuum chamber 102.

  Next, a conventional sputtering method using the sputtering apparatus 101 shown in FIG. 1 will be described. As shown in FIG. 1, a target 111 and a substrate 112 are mounted in a chamber 102, and argon (Ar) gas is injected into the chamber 102. When Ar gas is turned into plasma, electrons are captured by a magnetic field formed by the magnet 104 near the surface of the target 111, and more Ar ions are generated. Then, when the Ar ions collide with the target 111, the surface of the target 111 is scraped and the atoms 113 forming the target 111 are detached from the target 111. A part of the atoms 113 fly in the vacuum chamber 102 and reach the substrate 112, and is deposited on the substrate 112. Thereby, a thin film 114 made of atoms 113 is formed on the substrate 112.

  However, this conventional sputtering apparatus and sputtering method have the following problems. That is, the emission position of the atoms 113 in the target 111 is biased by the magnetic field distribution formed by the magnet 104. Further, the emission angle of the atoms 113 from the target 111 is also biased depending on the direction of the magnetic field. For this reason, the film thickness distribution of the thin film 114 becomes non-uniform reflecting the deviation of the emission position and emission angle of the atoms 113 in the target 111.

  On the other hand, Patent Document 1 discloses a technique that uses a collimator in order to make the film thickness distribution of a thin film to be formed uniform. Patent Document 1 describes a technique in which a plate material in which a plurality of holes are formed is used as a collimator, and the ratio of the height to the diameter of the hole (step ratio) is varied at each part of the collimator. That is, at a position where the amount of emitted atoms from the target is large, the step ratio is increased to reduce the proportion of atoms passing through the hole, and at a position where the amount of emitted atoms from the target is small, the step ratio is lowered and passed through the hole. Increase the percentage of atoms that do. Patent Document 1 describes that the film thickness distribution of the film formed on the substrate can be made uniform.

JP-A-7-307288

  However, the conventional techniques described above have the following problems. That is, when the target is continuously used, the thickness of the target is reduced and the distance between the target and the substrate is increased. As a result, among the atoms emitted from the target, atoms emitted at a wide angle, that is, at a large inclination angle with respect to the direction perpendicular to the surface of the target, are attached to the outside of the substrate. Of these, the proportion of atoms reaching the substrate decreases. As a result, if the target is continuously used, the film forming speed decreases with use.

  The problem to be solved by the present invention includes the above-described problem as an example.

  The sputtering apparatus according to claim 1 is a sputtering apparatus in which atoms constituting the target are separated from the target and deposited on the substrate by causing ions to collide with the target, and the target and the substrate are accommodated. In addition, a vacuum chamber that evacuates the inside of the chamber and a plurality of openings are formed between the target and the substrate, and the arrival direction of the atoms is regulated by allowing the atoms to pass through the openings. And the shape of the opening is changeable.

  The apparatus for manufacturing a plasma display panel according to claim 5 is an apparatus for manufacturing a plasma display panel in which ions constituting the target are separated from the target and deposited on the substrate by causing ions to collide with the target. A vacuum chamber for storing the target and the substrate and evacuating the inside thereof, and a plurality of openings formed between the target and the substrate, and allowing the atoms to pass through the opening. And a collimator for restricting the flying direction of the atoms, and the shape of the opening can be changed.

  The sputtering method according to the invention of claim 10 includes a first arrangement step of arranging a first collimator having a plurality of openings formed between the target and the substrate, and ions in the vacuum in the target. The atoms constituting the target are separated from the target by colliding with each other, and the flying direction is regulated by allowing the atoms to pass through the opening of the first collimator and deposited on the substrate. And a second disposing step of disposing a second collimator having a plurality of openings, the shape of which is different from the opening of the first collimator, between the target and the substrate. And by causing ions to collide with the target in a vacuum, the atoms constituting the target are separated from the target, and the atoms are And regulations its incident direction by passing the opening portion of the collimator, and having a second deposition step of depositing on the substrate a.

  In a method for manufacturing a plasma display panel according to a fourteenth aspect of the present invention, a first disposing step of disposing a first collimator having a plurality of openings formed between a target and a substrate, and in a vacuum By making ions collide with the target, the atoms constituting the target are separated from the target, and the flying direction is regulated by passing the atoms through the opening of the first collimator. A first deposition step to be deposited and a second collimator in which a plurality of openings whose shapes are different from the openings of the first collimator are disposed between the target and the substrate. And disposing atoms constituting the target from the target by colliding ions with the target in a vacuum. Regulating the incident direction by causing the atoms to pass through the opening portion of the second collimator, and having a second deposition step of depositing on the substrate a.

  Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings. 2A and 2B are cross-sectional views illustrating the sputtering apparatus according to the present embodiment, where FIG. 2A illustrates a state immediately after the start of target use, and FIG. 2B illustrates after the target is continuously used. Shows the state. As shown in FIG. 2A, the sputtering apparatus 1 according to this embodiment is provided with a vacuum chamber 2 in which the inside is a vacuum atmosphere. A target 3 and a substrate 4 are accommodated inside the vacuum chamber 2.

  A collimator 5 is arranged between the target 3 and the substrate 4. A plurality of openings 6 are formed in the collimator 5. The collimator 5 regulates the flying direction of atoms by allowing the atoms emitted from the target 3 to pass through the opening 6. The shape of the opening 6 can be changed without breaking the vacuum in the vacuum chamber 2. The sputtering apparatus 1 according to the present embodiment is, for example, a PDP manufacturing apparatus, and is disposed on, for example, a PDP manufacturing line (not shown) and protected on a substrate 4 conveyed from the upstream side of the manufacturing line. A front substrate of PDP is produced by forming a film.

  Next, the operation of the sputtering apparatus according to this embodiment configured as described above, that is, the sputtering method according to this embodiment will be described. The sputtering method according to the present embodiment is, for example, a part of a PDP manufacturing method, and is a method of forming a protective film on a front substrate in a PDP manufacturing process, for example.

  First, a plurality of scanning electrodes and common electrodes are alternately and parallelly formed on a transparent substrate. Next, a transparent dielectric layer is formed so as to cover the scan electrode and the common electrode. Thereby, the substrate 4 (see FIG. 2A) in which the scanning electrode, the common electrode, and the transparent dielectric layer are formed on the transparent substrate is manufactured.

  Next, a protective film made of, for example, MgO is formed on the substrate 4. Hereinafter, a method for forming this protective film will be described in detail. As shown in FIG. 2A, the target 3 is mounted in the vacuum chamber 2 of the sputtering apparatus 1. The target 3 is a target made of, for example, MgO. In addition, a collimator 5 is disposed between the target 3 and the portion where the substrate 4 is to be disposed. And the inside of the vacuum chamber 2 is made into a vacuum atmosphere.

  In this state, the substrate 4 is supplied into the sputtering apparatus 1 from the upstream side of the production line. At this time, the substrate 4 is positioned at a position (film formation position) where the collimator 5 is sandwiched between the substrate 3 and the surface of the substrate 4 on which the scanning electrode, the common electrode, and the transparent dielectric layer are formed. To face. Then, for example, ions (not shown) such as Ar ions collide with the target 3, atoms (not shown) constituting the target 3 are separated from the target 3, and the atoms are opened in the opening 6 of the collimator 5. The flying direction is regulated by passing through the inside and deposited on the substrate 4. Thereby, for example, an MgO film (not shown) is formed on the substrate 4. Then, the substrate 4 on which film formation has been completed is transported to the downstream side of the production line and sent to the next process. On the other hand, the sputtering apparatus 1 continuously forms a MgO film on the substrate 4 newly supplied from the upstream side. Thus, film formation is continuously performed on the plurality of substrates 4.

  Then, as shown in FIG. 2B, when the target 3 is consumed to some extent, the collimator 5 a is arranged between the target 3 and the substrate 4 instead of the collimator 5. A plurality of openings 6a are formed in the collimator 5a. The shape of the opening 6 a is different from the shape of the opening 6 of the collimator 5. For example, the diameter of the opening 6 a is larger than the diameter of the opening 6. Therefore, the ratio of the height to the diameter of the opening 6 a (step ratio) is smaller than the step ratio of the opening 6. . The collimator 5a is placed in a vacuum without breaking the vacuum in the vacuum chamber 2.

  Next, the atoms constituting the target 3 are separated from the target 3 by colliding with the target 3 again, and the flying direction is regulated by passing the atoms through the opening 6a of the collimator 5a. Deposit on the substrate 4. Thereby, an MgO film is sequentially formed on the plurality of substrates 4. Thus, by forming a protective film made of, for example, MgO on the substrate 4, a front substrate of the PDP is manufactured.

  On the other hand, a plurality of data electrodes are formed in parallel to each other on an insulating substrate (not shown), a white dielectric layer is formed so as to cover the data electrodes, and a partition is formed on the white dielectric layer. Cells are partitioned into a matrix or stripes. Then, a phosphor layer is formed inside the partition wall, and a back substrate is manufactured.

  Then, the front substrate and the rear substrate manufactured as described above are overlapped. At this time, the direction in which the scanning electrode and the common electrode on the front substrate extend and the direction in which the data electrode on the rear substrate extends are orthogonal to each other. Next, after sealing both substrates and exhausting the inside of the cell, a discharge gas is sealed in the cell. Thereby, PDP can be manufactured.

  Next, the effect of this embodiment will be described. In the present embodiment, the shape of the opening can be changed by replacing the collimator 5 with the collimator 5a. That is, when the target 3 is consumed to some extent, the collimator 5 is replaced with the collimator 5a, so that the opening 6 can be made larger and the larger number of atoms can pass through. As a result, the decrease in the film formation rate due to the increase in the distance between the target 3 and the substrate 4 due to the consumption of the target 3 is compensated by increasing the ratio of atoms passing through the opening by increasing the opening. Even if the target is continuously used, it is possible to prevent the film formation rate from being lowered. Thereby, the film-forming speed | rate of sputtering can be kept substantially constant.

  In the present embodiment, an example in which the sputtering apparatus 1 is a continuous sputtering apparatus has been described, but the present invention is not limited to this, and may be a batch sputtering apparatus. In this case, the collimator 5 may be replaced with a collimator 5a when the substrate 4 is replaced. Further, in the present embodiment, an example in which two collimators 5 and 5a are prepared and used sequentially as collimators has been described, but three or more collimators may be used sequentially. Furthermore, in this embodiment, although the example which changes the diameter of the opening part of a collimator was shown, this invention is not limited to this, For example, you may make thickness of a collimator thin.

  Further, in the present embodiment, an example in which the sputtering apparatus 1 is an apparatus that forms a protective film on the front substrate of the PDP is shown, but the present invention is not limited to this, and the scanning electrode and the common electrode are formed on the front substrate of the PDP. May be formed, a transparent dielectric layer may be formed, a data electrode may be formed on the back substrate of the PDP, and a white dielectric layer may be formed. There may be used and it may be used for uses other than manufacture of PDP. For example, it can be used for the production of flat panel display panels such as liquid crystal display panels.

  Next, examples of the present invention will be described. First, a first embodiment of the present invention will be described. FIG. 3 is a cross-sectional view showing a sputtering apparatus according to the present embodiment. The sputtering apparatus according to the present embodiment is a part of a PDP manufacturing apparatus, and forms a protective film made of, for example, MgO on the front substrate of the PDP. This sputtering apparatus is arranged on a PDP production line. The sputtering apparatus according to the present embodiment is, for example, a magnetron sputtering apparatus.

  As shown in FIG. 3, the sputtering apparatus 11 according to the present embodiment is provided with a vacuum chamber 12 and a metal plate storage chamber 13. The interior of the vacuum chamber 12 and the interior of the metal plate storage chamber 13 communicate with each other. Further, the vacuum chamber 12 is provided with exhaust means (not shown) for exhausting the inside of the vacuum chamber 12 to make a vacuum.

  Furthermore, a target holder 14 is provided inside the vacuum chamber 12, and a target 15 made of, for example, MgO is mounted on the target holder 14. A magnet 16 is attached to the side opposite to the side on which the target 15 is mounted as viewed from the target holder 14. The magnet 16 forms a magnetic field near the surface of the target 15. Further, a film forming position of the substrate 17 is set at a position facing the target 15 in the vacuum chamber 12.

  The vacuum chamber 12 has a supply port (not shown) through which the substrate 17 is supplied from the upstream side of the production line, and a discharge port (not shown) that discharges the substrate 17 after the film formation process to the downstream side of the production line. Z). The supply port and the discharge port can supply and discharge the substrate 17 while keeping the inside of the vacuum chamber 12 airtight. Furthermore, in the vacuum chamber 12, a transport means (not shown) for transporting the substrate 17 from the supply port to the film formation position and transporting the substrate 17 from the film formation position to the discharge port is provided. For example, the transport means is configured to transport the substrate 17 by rotating a plurality of rollers (not shown).

  A collimator 18 is disposed between the target 15 and the film formation position of the substrate 17. The collimator 18 is formed by detachably stacking a plurality of, for example, three metal plates 19, and a plurality of holes 20 are formed so as to penetrate the three metal plates 19. The shape of the hole 20 is a truncated cone shape, and the diameter of the hole 20 on the surface of the collimator 18 on the substrate 17 side is larger than the diameter of the hole 20 on the surface on the target 15 side.

  The diameter of the hole 20 is not uniform within the main surface of the collimator 18. That is, at the position corresponding to a position where a relatively large number of ions collide and emit many atoms on the target 15, the diameter of the hole 20 is relatively small, and the target 15 collides with a relatively small number of ions. Thus, the hole 20 has a relatively large diameter at a position corresponding to a position where fewer atoms are emitted.

  Further, the sputtering apparatus 11 is provided with moving means (not shown) for removing the metal plate 19 from the collimator 18 and moving it to the metal plate storage chamber 13.

  Next, the operation of the sputtering apparatus according to this embodiment configured as described above, that is, the sputtering method according to this embodiment will be described. FIG. 4 is a cross-sectional view showing the sputtering method according to the present embodiment. The sputtering method according to the present embodiment is, for example, a part of a PDP manufacturing method, for example, a method of forming a protective film on a front substrate in a PDP manufacturing process.

  First, a plurality of scanning electrodes and common electrodes are alternately and parallelly formed on a transparent substrate. Next, a transparent dielectric layer is formed so as to cover the scan electrode and the common electrode. Thereby, the substrate 17 (see FIG. 3) in which the scan electrode, the common electrode, and the transparent dielectric layer are formed on the transparent substrate is manufactured.

  Next, a protective film made of, for example, MgO is formed on the substrate 17 using the sputtering apparatus 11. Hereinafter, this protective film forming step will be described in detail. First, as shown in FIG. 3, the target 15 made of MgO is mounted on the surface of the target holder 14 where the magnet 16 is not disposed. A collimator 18 is disposed between the target 15 and the film formation position of the substrate 17. Next, the inside of the vacuum chamber 12 and the inside of the metal plate storage chamber 13 is exhausted by an exhaust means to make a vacuum atmosphere. Thereafter, Ar gas is injected into the vacuum chamber 12 and the metal plate storage chamber 13.

  In this state, the substrate 17 is supplied into the sputtering apparatus 11 from the upstream side of the production line via the supply port. Then, the transport means transports the substrate 17 to a film forming position, that is, a position where the collimator 18 is sandwiched between the substrate 15 and the surface on which the scan electrode, the common electrode, and the transparent dielectric layer are formed on the substrate 17 It is made to face the target 15.

  Then, by making Ar gas into plasma, electrons are captured by the magnetic field formed near the surface of the target 15 by the magnet 16 and more Ar ions are generated. 15, the atoms (not shown) constituting the target 15 are separated from the target 15.

  When these atoms fly through the vacuum chamber 12 and reach the collimator 18, atoms that have reached the region where the hole 20 is formed on the surface of the collimator 18 enter the hole 20. The atoms that have reached this region are deposited on this region. Among the atoms that have entered the hole 20, atoms whose emission direction from the target 15 is less than a certain inclination angle with respect to the direction perpendicular to the surface of the target 15 pass through the hole 20 and pass through the substrate 17. The atoms whose emission direction is inclined at an angle larger than a certain inclination angle with respect to the perpendicular direction adheres to the sidewall of the hole 20. As described above, the direction of flight of the atoms emitted from the target 15 is regulated by passing through the holes 20. Then, the atoms that have passed through the holes 20 reach the substrate 17 and are deposited on the substrate 17. Thereby, the protective film 21 made of MgO is formed on the substrate 17.

  When the formation of the protective film 21 for one substrate 17 is completed, the transfer means transfers the substrate 17 to the discharge port and discharges the substrate 17 to the outside through the discharge port. This board | substrate 17 is conveyed downstream of a manufacturing line, and is sent to the following process. On the other hand, the sputtering apparatus 11 forms the protective film 21 on the substrate 17 newly supplied from the upstream side by the same method as described above. Thus, film formation is continuously performed on the plurality of substrates 17.

  At this time, if the target 15 is continuously used, the target 15 is consumed and thinned as shown in FIG. As a result, the distance between the target 15 and the substrate 17 increases. Further, atoms adhere to the edge of the hole 20 on the target 15 side to form the adhesion layer 22, and the effective diameter of the hole 20 is reduced. As a result, the proportion of atoms that reach the substrate 17 decreases, and the deposition rate of the protective film 21 decreases.

  Therefore, when the target 15 is consumed to some extent, the moving means removes the metal plate 19 arranged closest to the target 15 from the three metal plates 19 constituting the collimator 18 and moves it to the metal plate storage chamber 13. . Thereby, a collimator 18 a composed of two metal plates 19 is disposed between the target 15 and the substrate 17. This step is performed without breaking the vacuum in the vacuum chamber 12 and the metal plate storage chamber 13.

  As described above, since the shape of the hole 20 is a truncated cone shape spreading toward the substrate 17, the diameter of the hole 20a formed in the collimator 18a is larger than the diameter of the hole 20 formed in the collimator 18. Become. Further, by removing the metal plate 19 closest to the target 15, the adhesion layer 22 adhered to the metal plate 19 is also removed. As a result, the proportion of atoms entering the hole 20a among the atoms emitted from the target 15 increases. Further, since the collimator 18 is a laminate of three metal plates 19, the collimator 18 a is a laminate of two metal plates 19. Also become thinner. This widens the emission angle range in which atoms can pass through the holes 20a. As a result, it is possible to compensate for the consumption of the target 15 and the decrease in the film formation rate accompanying the formation of the adhesion layer 22.

  Next, Ar ions collide with the target 15 again, the atoms constituting the target 15 are separated from the target 15, and the flying direction is regulated by passing the atoms through the hole 20a of the collimator 18a. Deposit on the substrate 17. Thereby, an MgO film is sequentially formed on the plurality of substrates 17.

  When the target 15 is further consumed and an adhesion layer is formed on the edge of the hole 20a and the film formation speed is lowered again, the metal plate 19 on the target 15 side is removed from the collimator 18a, and the metal plate storage chamber is removed. Move to 13. As a result, a collimator composed of one metal plate 19 is formed. As a result, the collimator becomes thinner, the holes become larger, and the deposits are removed, so that a decrease in the film formation rate can be compensated. In this way, a protective film 21 made of, for example, MgO is formed on the substrate 17 to produce a PDP front substrate.

  On the other hand, a plurality of data electrodes are formed in parallel to each other on an insulating substrate (not shown), a white dielectric layer is formed so as to cover the data electrodes, and a partition is formed on the white dielectric layer. Cells are partitioned into a matrix or stripes. Then, a phosphor layer is formed inside the partition wall, and a back substrate is manufactured.

  Then, the front substrate and the rear substrate manufactured as described above are overlapped. At this time, the direction in which the scanning electrode and the common electrode on the front substrate extend and the direction in which the data electrode on the rear substrate extends are orthogonal to each other. Next, after sealing both substrates and exhausting the inside of the cell, a discharge gas is sealed in the cell. Thereby, PDP can be manufactured.

  Next, the effect of the present embodiment will be described. In this embodiment, by removing the metal plate 19 on the target 15 side from the collimator 18, the collimator can be made thinner, the diameter of the hole can be increased, and the adhesion layer attached to the edge of the hole can be removed. . As a result, it is possible to compensate for a decrease in the film formation rate due to continuous use of the target 15, and to keep the film formation rate substantially constant.

  Further, by connecting the metal plate storage chamber 13 to the vacuum chamber 12, the metal plate 19 can be removed from the collimator 18 while keeping the inside of the vacuum chamber 12 in a vacuum atmosphere. Thereby, every time the metal plate 19 is removed from the collimator 18, it is not necessary to break the vacuum in the vacuum chamber 12 and re-exhaust after that.

  Furthermore, in this embodiment, the size of the holes is not uniform in the plane of the collimator, and at the position corresponding to the position where a relatively large number of ions collide and emit many atoms on the target 15. The diameter of the hole 20 is relatively small. For this reason, the film thickness of the protective film 21 formed on the substrate 17 can be made uniform.

  In the present embodiment, an example in which the sputtering apparatus 11 is a continuous sputtering apparatus has been shown, but the present invention is not limited to this, and a batch sputtering apparatus may be used. In the present embodiment, an example in which the collimator 18 is composed of three metal plates 19 is shown, but the collimator may be composed of two or four or more metal plates. Furthermore, the member which comprises the collimator 18 is not limited to a metal plate.

  Next, a second embodiment of the present invention will be described. FIG. 5 is a cross-sectional view showing the sputtering apparatus according to the present embodiment. As shown in FIG. 5, in the sputtering apparatus 31 according to the present embodiment, a collimator 32 is provided instead of the collimator 18 (see FIG. 3) in the first embodiment described above. The collimator 32 is an integrally formed plate-like member, and the shape thereof is the same as that of the collimator 18 in the first embodiment described above. That is, a plurality of holes 20 are formed so as to penetrate the collimator 32. A collimator 33 is stored in the metal plate storage chamber 13. The collimator 33 is also an integrally formed plate-like member, and the shape thereof is the same as that of the collimator 18a in the first embodiment described above. That is, the collimator 33 is thinner than the collimator 32, and the hole 20 a of the collimator 33 is larger than the hole 20 of the collimator 32. Further, a moving means (not shown) provided in the sputtering apparatus 31 replaces the collimator 32 with the collimator 33. The configuration other than the above in the present embodiment is the same as that of the first embodiment described above.

  Next, the operation of the sputtering apparatus according to this embodiment, that is, the sputtering method according to this embodiment will be described. FIG. 6 is a cross-sectional view showing the sputtering method according to the present embodiment. As shown in FIG. 5, while the target 15 is new, the protective film 21 is formed using the collimator 32. When the target 15 is exhausted, the collimator 32 is replaced with a collimator 33. That is, the moving means moves the collimator 32 from the vacuum chamber 12 into the metal plate storage chamber 13 and stores it in the metal plate storage chamber 13, and the collimator 33 from the metal plate storage chamber 13 into the vacuum chamber 12. And is disposed between the target 15 and the film forming position of the substrate 17. Then, the protective film 21 is continuously formed using the collimator 33. Operations other than those described above in the present embodiment are the same as those in the first embodiment described above.

  In the present embodiment, when the target 15 is consumed, the collimator 32 is replaced with the collimator 33, so that the collimator is thinned, the hole is enlarged, and the adhesion layer attached to the collimator is removed. As a result, it is possible to compensate for a decrease in the film formation rate due to the consumption of the target 15. The effects of the present embodiment other than those described above are the same as those of the first embodiment described above.

  In the present embodiment, a plurality of collimators may be stored in advance in the metal plate storage chamber 13, and the plurality of collimators may be used sequentially. Alternatively, an internal airtight door is provided between the metal plate storage chamber 13 and the vacuum chamber 12, an external airtight door communicating with the outside is provided in the metal plate storage chamber 13, and a leak valve for introducing outside air into the metal plate storage chamber 13 And other exhaust means for exhausting the inside of the metal plate storage chamber 13 may be provided. Thereby, after replacing the collimator 32 with the collimator 33, the leak valve is opened after closing the internal hermetic door, and then the collimator 32 is recovered by opening the outer hermetic door. It can be set in the plate storage chamber 13. Then, after closing the external airtight door and exhausting the inside of the metal plate storage chamber 13 by another exhaust means, the metal plate storage chamber 13 can be brought into communication with the vacuum chamber 12 again by opening the internal airtight door. Thereby, when the target is further consumed, the collimator 33 can be replaced with the new collimator. As a result, three or more collimators are sequentially inserted into the vacuum chamber 12 without increasing the size of the metal plate storage chamber and without complicating the moving means while keeping the vacuum chamber 12 in a vacuum atmosphere. Can be used.

  In each of the above-described embodiments, the change in the film forming rate accompanying the consumption of the target can be compensated by changing the shape of the opening of the collimator. Thereby, even if it uses a target continuously, the film-forming speed | rate of sputtering can be kept substantially constant.

It is sectional drawing which shows the conventional sputtering device. (A) And (b) is sectional drawing which shows the sputtering device which concerns on this embodiment, (a) shows the state immediately after a target use start, (b) is the state after using a target continuously. Indicates. It is sectional drawing which shows the sputtering device which concerns on the 1st Example of this invention. It is sectional drawing which shows the sputtering method which concerns on a present Example. It is sectional drawing which shows the sputtering device which concerns on the 2nd Example of this invention. It is sectional drawing which shows the sputtering method which concerns on a present Example.

Explanation of symbols

1, 11, 31; sputtering apparatus 2, 12; vacuum chamber 3, 15; target 4, 17; substrate 5, 5a, 18, 18a, 32, 33; collimator 6, 6a; opening 13; 14; target holder 16; magnet 19; metal plate 20, 20a; hole

Claims (17)

In a sputtering apparatus in which atoms constituting the target are separated from the target by depositing ions on the target and deposited on the substrate, a vacuum chamber that houses the target and the substrate and evacuates the inside thereof, and A plurality of openings formed between the target and the substrate, and a collimator that regulates the flying direction of the atoms by allowing the atoms to pass through the openings. A sputtering apparatus characterized in that the shape can be changed. The sputtering apparatus according to claim 1, wherein the shape of the opening can be changed without breaking the vacuum in the vacuum chamber. The collimator is formed by detachably stacking a plurality of members from the substrate side toward the target side, and the opening is formed so as to penetrate the plurality of members. The size on the substrate side surface is larger than the size on the target side surface, and the shape of the opening is changed by attaching and detaching the member. Sputtering equipment. The collimator has a plurality of collimator plates each having the plurality of openings formed therein, and the shapes of the openings differ between the collimator plates, and one collimator plate among the plurality of collimator plates. 2. Only the plate is disposed between the target and the substrate, and the shape of the opening is changed by replacing the one collimating plate with another collimating plate. Or the sputtering apparatus of 2. In an apparatus for manufacturing a plasma display panel, in which atoms constituting a target are separated from the target and deposited on the substrate by causing ions to collide with the target, the target and the substrate are accommodated and a vacuum is used to evacuate the inside thereof A chamber, and a collimator that is disposed between the target and the substrate and has a plurality of openings formed therein, and restricts the flying direction of the atoms by allowing the atoms to pass through the openings. The apparatus for manufacturing a plasma display panel, wherein the shape of the opening is changeable. 6. The apparatus for manufacturing a plasma display panel according to claim 5, wherein the shape of the opening can be changed without breaking the vacuum in the vacuum chamber. The collimator is formed by detachably stacking a plurality of members from the substrate side toward the target side, and the opening is formed so as to penetrate the plurality of members. The size on the substrate side surface is larger than the size on the target side surface, and the shape of the opening is changed by attaching and detaching the member. Plasma display panel manufacturing equipment. The collimator has a plurality of collimator plates each having the plurality of openings formed therein, and the shapes of the openings differ between the collimator plates, and one collimator plate among the plurality of collimator plates. 6. Only the plate is disposed between the target and the substrate, and the shape of the opening is changed by replacing the one collimating plate with another collimating plate. Or the apparatus for producing a plasma display panel according to 6. The apparatus for manufacturing a plasma display panel according to any one of claims 5 to 8, wherein a protective film for a front substrate of the plasma display panel is formed. A first disposing step of disposing a first collimator in which a plurality of openings are formed between the target and the substrate; and atoms constituting the target by causing ions to collide with the target in a vacuum A first deposition step of separating the target from the target and allowing the atoms to pass through the opening of the first collimator to regulate the flying direction and depositing on the substrate, and the shape thereof is the first collimator. A second disposing step of disposing a second collimator having a plurality of openings different from the openings of the meter between the target and the substrate, and causing ions to collide with the target in a vacuum The atoms constituting the target are separated from the target, and the atoms are passed by passing through the opening of the second collimator. Sputtering method characterized by comprising regulating the incident direction, and a second deposition step of depositing on the substrate a. The sputtering method according to claim 10, wherein the second arranging step is performed in a vacuum. The first collimator is formed by detachably stacking a plurality of members from the substrate side toward the target side, and the opening is formed to penetrate the plurality of members, The opening of the first collimator has a size on the substrate-side surface larger than that on the target-side surface, and the second arrangement step is the most on the target side from the first collimator. 12. The sputtering method according to claim 10, wherein the second collimator is formed by removing a member arranged on the substrate. The sputtering method according to claim 10 or 11, wherein the second arrangement step is a step of replacing the first collimator with the second collimator. A first disposing step of disposing a first collimator in which a plurality of openings are formed between the target and the substrate; and atoms constituting the target by causing ions to collide with the target in a vacuum A first deposition step of separating the target from the target and allowing the atoms to pass through the opening of the first collimator to regulate the flying direction and depositing on the substrate, and the shape thereof is the first collimator. A second disposing step of disposing a second collimator having a plurality of openings different from the openings of the meter between the target and the substrate, and causing ions to collide with the target in a vacuum The atoms constituting the target are separated from the target, and the atoms are passed by passing through the opening of the second collimator. Regulate incident direction, a manufacturing method of a plasma display panel and having a second deposition step of depositing on the substrate a. The method of manufacturing a plasma display panel according to claim 14, wherein the second arranging step is performed in a vacuum. The first collimator is formed by detachably stacking a plurality of members from the substrate side toward the target side, and the opening is formed to penetrate the plurality of members, The opening of the first collimator has a size on the substrate-side surface larger than that on the target-side surface, and the second arrangement step is the most on the target side from the first collimator. 16. The method of manufacturing a plasma display panel according to claim 14, wherein the member arranged in the step is removed to form the second collimator. 16. The method of manufacturing a plasma display panel according to claim 14, wherein the second arrangement step is a step of replacing the first collimator with the second collimator.

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