CN113728123B

CN113728123B - Sputtering apparatus

Info

Publication number: CN113728123B
Application number: CN202080030081.3A
Authority: CN
Inventors: 久保田清
Original assignee: Nissin Electric Co Ltd
Current assignee: Nissin Electric Co Ltd
Priority date: 2019-04-26
Filing date: 2020-04-27
Publication date: 2023-11-07
Anticipated expiration: 2040-04-27
Also published as: TWI742632B; WO2020218598A1; CN113728123A; KR20210143832A; JP7172839B2; JP2020183550A; TW202039901A

Abstract

The invention makes the pressure of the gas supplied to the target uniform in the film forming chamber, and improves the uniformity of the film formed on the substrate. In a sputtering device (1), an antenna (20) is disposed in a predetermined first positional relationship in a first space (S1) formed between two targets (30) in any one of two targets (30) adjacent to each other, and the antenna (20) is disposed in a predetermined second positional relationship with respect to a gas inlet (41) and a gas outlet (51) disposed in the first space (S1).

Description

Sputtering apparatus

Technical Field

The present invention relates to a sputtering apparatus.

Background

As a conventional technique, a sputtering apparatus configured as follows is known: a magnetic field is formed on the surface of the target to generate plasma, and ions in the plasma collide with the target, whereby sputtered particles fly out of the target. As such a sputtering apparatus, for example, a sputtering apparatus disclosed in patent document 1 is cited.

The sputtering apparatus disclosed in patent document 1 has a target apparatus in which two adjacent targets are provided as a single set, and a voltage is applied between the targets in the single set. The target device has a partition wall disposed opposite to the side surfaces of a group of targets, a gas inlet is formed between the partition wall and the targets, and a main exhaust port is formed at the bottom surface of the vacuum tank. The reaction gas introduced from the gas introduction port passes through a group of targets and is then exhausted from the main exhaust port.

Prior art literature

Patent literature

Patent document 1: japanese laid-open patent publication No. 2013-49884 (published on 14 days of 3.3)

Disclosure of Invention

Problems to be solved by the invention

In the sputtering apparatus disclosed in patent document 1, a gas inlet is formed between the partition wall and the targets, but a gas inlet is not formed between a set of targets. In addition, a main exhaust port is formed between a group of targets, but no main exhaust port is formed between the partition wall and the targets.

Accordingly, the sputtering apparatus disclosed in patent document 1 has the following problems: the pressure of the gas supplied to the target cannot be sufficiently equalized in the vacuum chamber, and the thin film formed on the substrate cannot be sufficiently equalized. An object of an embodiment of the present invention is to make the pressure of a gas supplied to a target uniform in a film forming chamber, and to improve uniformity of a thin film formed on a substrate.

Technical means for solving the problems

In order to solve the problem, a sputtering apparatus according to an embodiment of the present invention includes: a vacuum container having a film forming chamber formed therein for accommodating a substrate; a plurality of antennas disposed to face the substrate and generating plasma; and a plurality of targets provided on the opposite side of the substrate side to the plurality of antennas, the targets being targets of sputtering; in the film forming chamber, a plurality of gas inlets for introducing a gas into the film forming chamber and a plurality of gas outlets for exhausting a gas from the film forming chamber are formed, and in any one of the two targets adjacent to each other, the antenna is disposed in a predetermined first positional relationship with respect to a first space formed between the two targets, and the antenna is disposed in a predetermined second positional relationship with respect to the gas inlets and the gas outlets disposed in the first space.

ADVANTAGEOUS EFFECTS OF INVENTION

According to an embodiment of the present invention, the pressure of the gas supplied to the target can be made uniform in the film forming chamber, and uniformity of the thin film formed on the substrate can be improved.

Drawings

Fig. 1 is a cross-sectional view showing the structure of a sputtering apparatus according to embodiment 1 of the present invention.

Fig. 2 is a plan view of the inside of the sputtering apparatus shown in fig. 1.

Fig. 3 is a cross-sectional view showing the structure of a sputtering apparatus according to embodiment 2 of the present invention.

Fig. 4 is a plan view of the inside of the sputtering apparatus shown in fig. 3.

Fig. 5 is a plan view of the inside of a modification of the sputtering apparatus shown in fig. 4.

[ description of symbols ]

1. 2, 2a: sputtering apparatus

10: vacuum container

11: film forming chamber

20: antenna

30: target(s)

31: target holding part

40. 40a: gas inlet pipe

41. 121: gas inlet

50: exhaust plate

51: gas exhaust port

120: anti-adhesion plate

122: second gas exhaust port

D1: extending direction of antenna

S1: a first space

S2: second space

Detailed Description

Embodiment 1

Structure of sputtering apparatus 1

Fig. 1 is a cross-sectional view showing the structure of a sputtering apparatus 1 according to embodiment 1 of the present invention. Fig. 2 is a plan view of the inside of the sputtering apparatus 1 shown in fig. 1. Specifically, fig. 2 is a plan view of the interior of the sputtering apparatus 1 when viewed from the direction from the substrate W toward the antenna 20 in fig. 1. In fig. 2, the substrate holding portion 70, the vacuum evacuation device 81, and the vacuum evacuation device 91 are omitted. In fig. 1 to 5, the member numbers are omitted for members having shapes that can be similarly seen in the drawings.

As shown in fig. 1, the sputtering apparatus 1 includes: the vacuum chamber 10, the plurality of antennas 20, the plurality of targets 30, the plurality of target holding portions 31, the plurality of gas introduction pipes 40, the exhaust plate 50, the plurality of insulating portions 60, the substrate holding portion 70, the vacuum evacuation device 81, and the vacuum evacuation device 91.

The sputtering apparatus 1 is an apparatus for forming a film on a substrate W by sputtering a target 30 using inductively coupled plasma. Here, the substrate W is, for example, a glass substrate for a flat panel display such as a liquid crystal display or an organic Electroluminescence (EL) display, a flexible substrate for a flexible display, or the like.

The vacuum container 10 is a container that is evacuated and supplied with a gas. The vacuum chamber 10 is a chamber in which a film forming chamber 11 for accommodating the substrate W is formed. The film forming chamber 11 is formed by being surrounded by the side wall 12 of the vacuum chamber 10, the bottom surface 13 of the vacuum chamber 10, the substrate holding portion 70, the plurality of targets 30, and the plurality of gas introduction pipes 40. A plurality of gas inlets 41 and a plurality of gas outlets 51 are formed in the film forming chamber 11. The gas inlet 41 and the gas outlet 51 will be described later.

The plurality of antennas 20 are inductively coupled plasma (Inductively Coupled Plasma, ICP) antennas each provided in the film forming chamber 11 so as to face the substrate W, and generate plasma. Specifically, the plurality of antennas 20 are arranged in parallel on the same plane along the surface of the substrate W on the surface side of the substrate W in the film forming chamber 11. For example, the plurality of antennas 20 are arranged substantially parallel to the surface of the substrate W.

The portion of each antenna 20 located inside the vacuum vessel 10 is covered with a straight tubular insulating cover 21. As shown in fig. 2, each antenna 20 has a straight line shape and the same structure in a plan view. Here, the term "head-up" refers to a case when viewed from the direction from the substrate W toward the antenna 20.

The targets 30 are each provided on the opposite side of the substrate W to the antennas 20, and are targets of sputtering. Each target 30 is a flat plate-like target formed in a rectangular shape in a plan view, and is made of an oxide semiconductor material such as InGaZnO. Each target holding portion 31 holds the target 30 so as to face the substrate W held by the substrate holding portion 70. The target holding portion 31 is provided on the exhaust plate 50 via an insulating portion 60 having a vacuum sealing function on the opposite side to the side facing the substrate W.

As shown in fig. 2, the plurality of gas introduction pipes 40 extend in the same direction as the extending direction D1 of the antenna 20. Each gas introduction pipe 40 is connected to an intermediate pipe 100 extending in the same direction as the direction D2 in which the plurality of gas introduction pipes 40 are arranged, via a connection pipe 101. That is, the connecting pipe 101 connects each gas introduction pipe 40 to the intermediate pipe 100. The size of the plurality of gas introduction pipes 40 may be appropriately determined in accordance with the amount of gas to be introduced into the film forming chamber 11.

The gas supply mechanism 110 is connected to the central portion of the intermediate pipe 100 in the direction D2. The gas supply mechanism 110 supplies O ₂ (oxygen) or N ₂ A mixed gas of a reactive gas such as (nitrogen) and a sputtering gas such as Ar (argon) is supplied into the intermediate pipe 100. The mixed gas supplied to the inside of the intermediate pipe 100 passes through the connecting pipe 101 and is supplied to the inside of the gas introduction pipe 40. The mixed gas supplied into the gas introduction pipe 40 is introduced from the gas introduction port 41 toward the substrate W side of the target 30 in the film forming chamber 11.

The gas supply mechanism 110 may supply only the reactive gas into the intermediate pipe 100. In this case, the reactive gas supplied to the inside of the intermediate pipe 100 passes through the connection pipe 101 and is supplied to the inside of the gas introduction pipe 40. The reactive gas supplied into the gas introduction pipe 40 is introduced from the gas introduction port 41 toward the substrate W side of the target 30 in the film forming chamber 11.

In addition, when the gas supply mechanism 110 supplies only the reactive gas into the intermediate pipe 100, a gas inlet (not shown) for introducing the sputtering gas into the film forming chamber 11 may be formed in the sidewall 12 of the vacuum chamber 10. In this case, the sputtering gas is introduced into the film forming chamber 11 through the gas inlet by a gas supply mechanism (not shown) for supplying the sputtering gas. The gas supply mechanism is connected to the vacuum vessel 10.

The plurality of gas introduction pipes 40 are each arranged so as to extend in a direction parallel to the longitudinal direction of the plurality of targets 30 in plan view. A plurality of gas inlets 41 for introducing a gas into the film forming chamber 11 are formed in each of the gas introduction pipes 40. The shape of the plurality of gas inlets 41 is preferably circular, but is not limited thereto, and may be triangular, quadrangular, or the like, for example.

The direction in which the plurality of gas inlets 41 are arranged is the same as the extending direction of the plurality of antennas 20, and the plurality of gas inlets 41 are formed along the antennas 20. According to the above configuration, the gas that has been introduced into the film forming chamber 11 is uniformly supplied to the antenna 20. Therefore, the plasma generated by the antenna 20 uniformly spreads on the surface of the target 30, and thus uniformity of the thin film formed on the substrate W can be improved in the film forming chamber 11.

The exhaust plate 50 is provided on the opposite side of the gas introduction pipe 40 from the substrate W side, and a plurality of gas exhaust ports 51 for exhausting the gas in the film forming chamber 11 are formed. The targets 30 and the gas introduction pipes 40 are alternately arranged in the exhaust plate 50. The plurality of gas exhaust ports 51 are formed along the extending direction of the gas introduction pipe 40, respectively, and are formed on both sides of the gas introduction pipe 40.

As shown in fig. 2, the total opening area of the plurality of gas exhaust ports 51 is larger than the total opening area of the plurality of gas introduction ports 41. This allows the gas to be exhausted from the film forming chamber 11 to the outside more preferentially than the gas introduced into the film forming chamber 11. Therefore, a differential pressure between the pressure in the film forming chamber 11 and the pressure in the exhaust chamber 15 can be ensured, and the pressure in the film forming chamber 11 can be appropriately maintained.

Further, the gas exhaust port 51 is formed in the second space S2 on the side opposite to the side communicating with the film forming chamber 11 so as to exhaust the gas through the second space S2 formed between the gas introduction pipe 40 and the target 30 and the target holding portion 31.

According to the above configuration, the gas introduced from the gas introduction port 41 is discharged through the second space S2 formed between the gas introduction pipe 40 and the target 30 and the target holding portion 31, and thus the gas is uniformly distributed in the film forming chamber 11. Thus, uniformity of a thin film formed on the substrate W can be improved in the film forming chamber 11. The gas exhaust port 51 may be formed on the side opposite to the side communicating with the film forming chamber 11 in the space between the side wall 12 of the vacuum chamber 10 and the gas introduction pipe 40.

Here, the antenna 20 is disposed in a predetermined first positional relationship with respect to the first space S1 formed between the two targets 30 in any one of the two targets 30 adjacent to each other among the plurality of targets 30. The antenna 20 is disposed in a predetermined second positional relationship with respect to the gas inlet 41 and the gas outlet 51 disposed in the first space S1.

According to the above configuration, in any of the two adjacent targets 30, the positional relationship between the antenna 20 and the target 30, the gas inlet 41, and the gas outlet 51 is fixed. Therefore, the pressure of the gas supplied to the target 30 can be made uniform in the film forming chamber 11. Thus, uniformity of the thin film formed on the substrate W can be improved.

Specifically, the efficiency of gas utilization can be improved, and the uniformity of the film thickness and film quality of the thin film formed on the substrate W can be improved. Here, in particular, a case where the target 30 is an oxide semiconductor material such as InGaZnO is considered.

In this case, when the oxygen partial pressure is controlled, when the oxygen partial pressure is changed as a multilayer structure, or when a thin film having a crystal structure is formed on the substrate W, the pressure of the gas supplied to the target 30 becomes uniform. This can make the specific resistance and crystallinity of the thin film formed on the substrate W extremely uniform. In addition, the partial pressure of the reactive gas in the direction D2 can be made uniform for all the targets 30.

The first positional relationship is a positional relationship in which the distance between the antenna 20 and each of two adjacent targets 30 among the plurality of targets 30 is the same, and the second positional relationship is a positional relationship in which the antenna 20 faces the gas inlet 41 and the gas outlet 51. According to this configuration, the pressure of the gas supplied to each of the adjacent two targets 30 can be made uniform.

The second positional relationship is preferably a positional relationship in which the gas introduction port 41 is disposed in a direction parallel to a direction from the substrate W toward the antenna 20 and on a straight line passing through the antenna 20. Thus, the gas introduced from the gas introduction port 41 can be supplied to the target 30 through the antenna 20.

The substrate holding unit 70 is a holder for holding the substrate W in a horizontal state in the film forming chamber 11, for example. In a plan view, a main exhaust port 80 is formed in the center of the upper surface 14 of the vacuum vessel 10. The main exhaust port 80 is formed to exhaust the gas introduced into the film forming chamber 11 from the gas inlet 41 to the outside of the film forming chamber 11.

The gases in the film forming chamber 11, which have been exhausted from the plurality of gas exhaust ports 51, are exhausted from the main exhaust port 80 to the outside of the vacuum chamber 10 by a vacuum exhaust device 81 such as a vacuum pump. The vacuum evacuation device 81 is connected to the vacuum container 10. In addition, a sub-exhaust port 90 is formed in the bottom surface 13 of the vacuum chamber 10. The sub-exhaust port 90 is formed to exhaust the gas in the film forming chamber 11 to the outside of the film forming chamber 11 before and after the film is formed on the substrate W. Before and after film formation on the substrate W, the gas in the film forming chamber 11 is exhausted from the sub-exhaust port 90 to the outside of the vacuum chamber 10 by a vacuum exhaust device 91 such as a vacuum pump. The vacuum evacuation device 91 is connected to the vacuum container 10.

Further, a plurality of main exhaust ports 80 may be formed in the upper surface 14 of the vacuum chamber 10. Thus, even when the size of the sputtering apparatus 1 is large, that is, when the size of the vacuum chamber 10 is large, the gas in the film forming chamber 11 can be sufficiently exhausted. Further, since the gas in the film forming chamber 11 can be uniformly discharged, the pressure of the gas supplied to the target 30 can be uniform in the film forming chamber 11. A plurality of sub-exhaust ports 90 may be formed in the bottom surface 13 of the vacuum chamber 10.

Here, the plurality of gas exhaust ports 51 may be formed in the exhaust plate 50 by appropriately determining the number, the size, or the arrangement thereof so that the exhaust speeds of the gases are equal. For example, the larger the distance from the main exhaust port 80, the larger the number of the gas exhaust ports 51, or the larger the gas exhaust ports 51 may be. In addition, the smaller the distance from the main exhaust port 80, the smaller the number of the gas exhaust ports 51 or the smaller the gas exhaust ports 51 may be. In fig. 2, the configuration in which the number, size and arrangement of the gas outlets 51 are identical is an example.

The plurality of gas inlets 41 may be formed in the gas introduction pipe 40 by appropriately determining the number, size, or arrangement of the gas inlets 41 so that the gas inlets 41 introduce the same flow rate of gas into the film forming chamber 11. For example, the larger the distance from the gas supply mechanism 110, the larger the number of the gas inlets 41 or the larger the gas inlets 41. In addition, the smaller the distance from the gas supply mechanism 110, the smaller the number of gas inlets 41 or the smaller the gas inlets 41. In fig. 2, an example is a configuration in which the number, size, and arrangement of the gas inlets 41 are identical.

Embodiment 2

Fig. 3 is a cross-sectional view showing the structure of a sputtering apparatus 2 according to embodiment 2 of the present invention. Fig. 4 is a plan view of the inside of the sputtering apparatus 2 shown in fig. 3. Specifically, fig. 4 is a plan view of the inside of the sputtering apparatus 2 when viewed from the direction from the substrate W toward the antenna 20 in fig. 3. In fig. 4, the antenna 20, the substrate holding portion 70, the vacuum evacuation device 81, and the vacuum evacuation device 91 are omitted.

For convenience of explanation, members having the same functions as those described in the above-described embodiment are given the same reference numerals, and the explanation thereof is not repeated. As shown in fig. 3, the sputtering apparatus 2 is different from the sputtering apparatus 1 in that the gas introduction pipe 40 is changed to the gas introduction pipe 40a and the deposition preventing plate 120 is included.

The gas introduction pipe 40a extends in the same direction as the extending direction of the antenna 20, and has a cross-sectional concave shape that opens to the side opposite to the antenna 20. Specifically, the concave surface 42a of the gas introduction pipe 40a faces the antenna 20. The gas introduction pipe 40a may have a concave cross-section, for example, a コ -shaped shape, a curved shape of the concave surface 42a, or a V-shaped shape.

The adhesion preventing plate 120 is provided on the open side of the gas introduction pipe 40a, and is formed with a plurality of gas introduction ports 121 for preventing sputtered particles emitted from the target 30 from adhering to the gas introduction pipe 40a. According to the above configuration, since the adhesion preventing plate 120 is provided for the gas introduction pipe 40a, the adhesion preventing plate 120 to which the sputtered particles emitted from the target 30 are adhered can be replaced, and maintenance can be easily performed.

As shown in fig. 4, the adhesion preventing plate 120 covers the gas introduction pipe 40a when viewed from the direction from the substrate W toward the antenna 20. The anti-adhesion plate 120 is disposed between two adjacent targets 30. That is, the adhesion preventing plate 120 is disposed in the first space S1. The exhaust plate 50 is provided on the opposite side of the gas introduction pipe 40a from the open side, and a plurality of gas exhaust ports 51 are formed. The deposition preventing plate 120 has a plurality of second gas exhaust ports 122 for exhausting the gas in the film forming chamber 11 to the plurality of gas exhaust ports 51.

According to the above structure, the second gas exhaust port 122 is formed in addition to the gas exhaust port 51, so that the amount of gas exhaust can be adjusted by two stages of the gas exhaust port 51 and the second gas exhaust port 122. Therefore, a structure for uniformly discharging the gas can be easily realized.

A plurality of second gas exhaust ports 122 are formed at both ends of the anti-adhesion plate 120 in the extending direction. The plurality of adhesion preventing plates 120 extend in the same direction as the extending direction D1 of the antenna 20. A part of the second gas exhaust ports 122 of the plurality of second gas exhaust ports 122 is formed between the gas introduction port 121 and the target 30.

As shown in fig. 4, the number of the second gas outlets 122 formed in the anti-adhesion plate 120 is greater than the number of the gas inlets 121 formed in the anti-adhesion plate 120. In addition, the total opening area of the plurality of gas exhaust ports 51 is larger than the total opening area of the plurality of gas introduction ports 121, so that the gas can be exhausted from the film forming chamber 11 to the outside more preferentially than the gas introduced into the film forming chamber 11. Therefore, a differential pressure between the pressure in the film forming chamber 11 and the pressure in the exhaust chamber 15 can be ensured, and the pressure in the film forming chamber 11 can be appropriately maintained.

< modification >

Next, a modification of the sputtering apparatus 2 will be described with reference to fig. 5. Fig. 5 is a plan view of the inside of a modification of the sputtering apparatus 2 shown in fig. 4. A modification of the sputtering apparatus 2 is referred to as a sputtering apparatus 2a. As shown in fig. 5, the sputtering apparatus 2a is different from the sputtering apparatus 2 in that two intermediate pipes 100 and a gas supply mechanism 110 are provided.

In the sputtering apparatus 2a, two intermediate pipes 100 and gas supply mechanisms 110 are provided on both sides of the vacuum container 10. Two intermediate pipes 100 are connected to the plurality of gas introduction pipes 40a via connection pipes 101 on both sides of the vacuum vessel 10. The gas supply mechanism 110 is connected to each of the two intermediate pipes 100. Further, three or more intermediate pipes 100 and gas supply mechanisms 110 may be provided for the vacuum vessel 10, respectively. In this case, the plurality of intermediate pipes 100 are connected to the plurality of gas introduction pipes 40a via the connection pipe 101, respectively.

Thus, even when the size of the sputtering apparatus 2a is large, that is, when the size of the vacuum chamber 10 is large, the gas can be sufficiently introduced into the film forming chamber 11. Therefore, since the gas can be sufficiently introduced into the film forming chamber 11, a thin film can be formed on the substrate W appropriately.

< summary >

The sputtering apparatus according to an embodiment of the present invention includes: a vacuum container having a film forming chamber formed therein for accommodating a substrate; a plurality of antennas disposed to face the substrate and generating plasma; and a plurality of targets provided on the opposite side of the substrate side to the plurality of antennas, the targets being targets of sputtering; in the film forming chamber, a plurality of gas inlets for introducing a gas into the film forming chamber and a plurality of gas outlets for exhausting a gas from the film forming chamber are formed, and in any one of the two targets adjacent to each other, the antenna is disposed in a predetermined first positional relationship with respect to a first space formed between the two targets, and the antenna is disposed in a predetermined second positional relationship with respect to the gas inlets and the gas outlets disposed in the first space.

According to the above configuration, since the positional relationship between the antenna and the target, the gas inlet, and the gas outlet is fixed in any of the two adjacent targets, the pressure of the gas supplied to the target can be made uniform in the film forming chamber. Thus, uniformity of a thin film formed on a substrate can be improved.

The first positional relationship may be a positional relationship in which the distance between the antenna and each of two adjacent targets among the plurality of targets is the same, and the second positional relationship may be a positional relationship in which the antenna faces the gas inlet and the gas outlet. According to the above configuration, the distance between the antenna and each of the two adjacent targets is the same, and the antenna faces the gas inlet and the gas outlet, so that the pressure of the gas supplied to each of the two adjacent targets can be made uniform.

The gas exhaust port may be formed in the second space on the side opposite to the side communicating with the film forming chamber so as to exhaust the gas through the second space formed between the gas introduction pipe and the target holding portion. According to the above configuration, the gas introduced from the gas introduction port is discharged through the second space formed between the gas introduction pipe and the target holding portion, so that the gas is uniformly distributed in the film forming chamber. Thus, uniformity of a thin film formed on a substrate can be improved in a film forming chamber.

The sputtering apparatus may further include: a gas introduction pipe extending in the same direction as the extending direction of the antenna and having a cross-sectional concave shape that is open on a side facing the antenna; and an adhesion prevention plate provided on an open side of the gas introduction pipe, and formed with the plurality of gas introduction ports for preventing sputtered particles emitted from the target from adhering to the gas introduction pipe. According to the above configuration, since the adhesion preventing plate is provided for the gas introduction pipe, the adhesion preventing plate to which the sputtered particles emitted from the target have adhered can be replaced, and maintenance can be easily performed.

The sputtering apparatus may further include: an exhaust plate provided on the opposite side of the gas introduction pipe from the open side, the exhaust plate having the plurality of gas exhaust ports formed therein; and forming a plurality of second gas exhaust ports for exhausting the gas in the film forming chamber toward the plurality of gas exhaust ports on the anti-adhesion plate. According to the above structure, the second gas exhaust port is formed in addition to the gas exhaust port, so that the amount of gas can be adjusted by two stages of the gas exhaust port and the second gas exhaust port. Therefore, a structure for uniformly discharging the gas can be easily realized.

The direction in which the plurality of gas inlets are arranged may be the same as the extending direction of the plurality of antennas. According to the above structure, the gas introduced into the film forming chamber is uniformly supplied to the antenna. Therefore, the plasma generated by the antenna is uniformly diffused on the surface of the target, and thus uniformity of the thin film formed on the substrate can be improved in the film forming chamber.

The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention.

Claims

1. A sputtering apparatus characterized by comprising:

a vacuum container having a film forming chamber formed therein for accommodating a substrate;

a plurality of antennas disposed to face the substrate and generating plasma; and

a plurality of targets, which are targets of sputtering, provided on a side opposite to the substrate side with respect to the plurality of antennas;

a plurality of gas inlets for introducing a gas into the film forming chamber and a plurality of gas outlets for exhausting a gas in the film forming chamber are formed in the film forming chamber,

in any one of the two targets adjacent to each other, the antenna is disposed in a predetermined first positional relationship with respect to a first space formed between the two targets, and the antenna is disposed in a predetermined second positional relationship with respect to the gas inlet and the gas outlet disposed in the first space,

wherein the first positional relationship is a positional relationship in which the distance between the antenna and each of two adjacent targets among the plurality of targets is the same,

the second positional relationship is a positional relationship in which the antenna is opposed to the gas inlet and the gas outlet.

2. The sputtering apparatus according to claim 1, wherein the gas exhaust port is formed in a side of the second space opposite to a side communicating with the film forming chamber so as to exhaust gas through the second space formed between the gas introduction pipe and the target and target holding portion.

3. The sputtering apparatus according to claim 1 or 2, characterized by further comprising:

a gas introduction pipe extending in the same direction as the extending direction of the antenna and having a cross-sectional concave shape that is open on a side facing the antenna; and

an adhesion preventing plate provided on an open side of the gas introduction pipe and having the plurality of gas introduction ports for preventing sputtered particles emitted from the target from adhering to the gas introduction pipe.

4. A sputtering apparatus according to claim 3, further comprising:

an exhaust plate provided on the opposite side of the gas introduction pipe from the open side, the exhaust plate having the plurality of gas exhaust ports formed therein;

and forming a plurality of second gas exhaust ports for exhausting the gas in the film forming chamber toward the plurality of gas exhaust ports on the anti-adhesion plate.

5. The sputtering apparatus according to claim 1 or 2, wherein the direction in which the plurality of gas introduction ports are arranged is the same as the extending direction of the plurality of antennas.

6. The sputtering apparatus according to claim 3, wherein the direction in which the plurality of gas inlets are arranged is the same as the extending direction of the plurality of antennas.

7. The sputtering apparatus according to claim 4, wherein the direction in which the plurality of gas inlets are arranged is the same as the extending direction of the plurality of antennas.