JP3751909B2 - Plasma apparatus and plasma processing substrate - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma apparatus and a plasma processing substrate, and in particular, a high frequency electric field is supplied to an antenna to generate a high frequency electric field, and plasma is generated by the electric field, and a surface such as etching or thin film formation on a large substrate surface. The present invention relates to an inductively coupled plasma apparatus and a plasma processing substrate that perform processing stably.
[0002]
[Prior art]
In the field of processing equipment using plasma, such as dry etching equipment, ashing equipment, plasma CVD equipment, etc. used in the manufacturing process of semiconductor devices and liquid crystal displays, the plasma source of processing equipment has grown with the recent increase in size of processing substrates. However, there is a demand for larger diameters. On the other hand, in order to secure an etching rate, a film formation rate, and a throughput, it is required to increase the density of plasma under a high vacuum.
[0003]
Among these, with respect to plasma densification, a method of generating inductively coupled plasma (hereinafter abbreviated as ICP) using high frequency is employed in order to promote plasma excitation efficiency. The ICP mainly generates a plasma by generating an induction electromagnetic field in a vacuum by passing a high-frequency current through the coil for exciting the antenna, and can uniformly generate a high-density plasma under a high vacuum.
[0004]
However, in a conventional inductively coupled plasma generator in which a high frequency antenna is installed on the wall of the insulator of the vacuum vessel or the atmosphere on the top plate, the thickness of the insulator must be greatly increased as the diameter of the discharge chamber increases. In addition, only the induction electric field component radiated from the side of the surface in contact with the insulating partition wall or top plate of the vacuum vessel among the induction electric field radiated from the antenna is used for maintaining the discharge. There was a problem that use efficiency of was bad.
[0005]
In view of this, the present inventor previously proposed a technique for an inductively coupled plasma apparatus using high frequency discharge, in which an antenna is provided in a vacuum vessel and the antenna is divided into a plurality of small antennas. (Japanese Patent Laid-Open No. 2001-35697). According to this, by using the internal antenna, all of the induced electric field radiated from the antenna can be effectively used, and it is not necessary to use an insulating partition or a top plate. Further, the internal antenna is likely to cause abnormal discharge when a large voltage is applied, but the antenna is divided so that the inductance of each antenna is reduced so that at least the antenna does not circulate. Thereby, a high-density large-diameter plasma can be obtained without being limited by the shape, diameter and length of the discharge chamber.
[0006]
[Problems to be solved by the invention]
By the way, from the viewpoint of practical use for solar cells and flat displays, a thin film with a large area of approximately 1 meter x 1 meter is produced with higher crystallinity, higher homogeneity, and faster film formation. It is required to do. In this case, the plasma source is required to have a lower pressure, a higher density, a lower electron temperature, and a larger area.
[0007]
An object of the present invention is to provide an inductively coupled plasma apparatus capable of stably generating a large-area plasma.
[0009]
The present invention also aims to provide a plasma processing substrate produced by the plasma for an induction coupling system which is capable of stably generating a large-area plasma.
[0010]
[Means for Solving the Problems]
The plasma device of the present invention is an inductively coupled plasma device using high frequency discharge, which is an antenna to which high frequency power is supplied, each of which is coated with an insulator and terminates without going around the vacuum vessel, and has high frequency 1 / A plurality of antennas made of linear or plate-like conductors shorter than the length of four wavelengths are provided in the vacuum vessel, and each of the one or more antennas is provided from the high frequency power source outside the vacuum vessel. the plate-like conductor that is, high-frequency power is supplied to the parallel, said plate-shaped conductor, a distance connecting the respective said high-frequency feed point and one or more antennas in a straight line of 1/4-wavelength high-frequency long It is provided to be shorter .
[0011]
Preferably, in the plasma apparatus of the present invention, the divided plurality a plurality of groups each antenna is composed of one or a plurality of antennas, provided a high-frequency power source corresponding to each of the groups, in each group High-frequency power is supplied in parallel by a plate-like conductor from a high-frequency power source provided corresponding to the group to each of one or a plurality of antennas belonging to the group.
[0012]
Preferably, in the plasma device of the present invention, the plate-like conductor is provided corresponding to the high-frequency power source, each of which is rectangular, and has a length in the direction in which the corresponding one or more antennas are arranged. When the direction and the direction perpendicular to the direction are the width direction, the distance connecting the high-frequency feeding point and each of the corresponding one or more antennas by a straight line is shorter than the length of 1/4 wavelength of the high frequency. Have a width.
Preferably, in the plasma apparatus according to the present invention, the vacuum vessel has a rectangular planar shape, and a plurality of antennas are provided on each of the four sides of the rectangular vacuum vessel to form a group, corresponding to each of the four sides. By providing a high frequency power supply, high frequency power is supplied in parallel to a plurality of antennas provided on four sides .
Preferably, in the plasma apparatus of the present invention, the high frequency power to be input is adjusted for each high frequency power supply corresponding to each group.
Preferably, in the plasma apparatus of the present invention, the vacuum vessel has a rectangular planar shape, and a plurality of antennas are provided on each of the four sides of the rectangular vacuum vessel so that high-frequency power to the long side of the rectangle is generated. It is made larger than the high frequency power to the short side of the rectangle .
[0014]
Also, preferably, the plasma apparatus of the present invention, the phase detector for detecting a high-frequency phase supplied from the high frequency power supply to which the corresponding provided corresponding to each of the high-frequency power supply provided corresponding to each of the four sides And a phase adjuster that adjusts the phase difference of the high frequency between each of the high frequency power supplies based on the detection results from each of the phase detectors.
[0018]
The plasma processing substrate of the present invention has a thin film formed or etched on the substrate using plasma generated by using the plasma apparatus as described above.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 to FIG. 3 are plasma device configuration diagrams, FIG. 1 shows a cross-sectional configuration of the plasma device of the present invention, FIG. 2 shows a partial cross-sectional configuration of the plasma device of the present invention, and FIG. The outline of the plane composition of the plasma device of the invention is shown.
[0020]
As shown in FIG. 3, the plasma apparatus of the present invention includes a vacuum chamber (vacuum container or process chamber) 1 having a rectangular planar shape. For example, the long side of the rectangle is 910 mm (millimeters) and the short side is 780 mm. The height is 366 mm, and the vacuum chamber 1 is a substantially rectangular parallelepiped.
[0021]
As shown in FIGS. 1 and 3, the antenna 5 is introduced into each of the side walls 12 of the vacuum chamber 1 through an introduction flange 51. A total of 14 antennas 5 are introduced, four from the two long sides and three from the two short sides of the rectangular vacuum chamber 1. A portion of the antenna 5 that is exposed to the vacuum inside the vacuum chamber 1 is covered with an insulator, although not particularly illustrated. This structure, the insulator, and the like are detailed in Japanese Patent Laid-Open No. 2001-35697.
[0022]
As shown in FIG. 3, each antenna 5 is rectangular (or U-shaped or U-shaped), terminates inside the vacuum chamber 1 without circulating, and has a high frequency of 1 applied thereto. / It consists of a small loop antenna consisting of a linear or plate-like conductor shorter than the length of 4 wavelengths. Since the antenna 5 that does not circulate can greatly reduce its inductance, an increase in the high-frequency voltage accompanying an increase in high-frequency power can be suppressed. Moreover, since it is shorter than the length of the ¼ wavelength of the high frequency, it is possible to prevent the standing wave from being generated and to prevent the uniformity of the plasma from being impaired by the standing wave.
[0023]
Further, as shown in FIG. 3, one radio frequency (RF) power source 7 for plasma generation (excitation) is provided for each side wall 12 (for each side) of the vacuum chamber 1, and four in total. The frequency of the high frequency output from the high frequency power supply 7 is, for example, 13.56 MHz. High frequency power (current) is supplied in parallel from each high frequency power source 7 to the corresponding three or four antennas 5 via the corresponding impedance matching unit 6. At this time, it is necessary to make the impedance (particularly resistance and inductance) as small as possible in the branch from the impedance matching unit 6 to the individual antennas 5.
[0024]
Therefore, as shown in FIG. 2, a rectangular plate-like conductor 52 having a sufficiently wide width is used for connection between the high-frequency power source 7 and the corresponding antenna 5. Each of the plate-like conductors 52 is provided along the side wall 12 of the vacuum chamber 1 and is made of, for example, a copper plate. The width W of the plate-like conductor 52 is such that the distance (indicated by a dotted line in FIG. 2) between the high-frequency feeding point from the impedance matching unit 6 and each antenna 5 (power branch point) is shorter than a quarter wavelength of the high-frequency. It is adjusted to become. For example, the width W of the plate-like conductor 52 is 110 mm, and the length (direction perpendicular to the width W) is 850 mm on the long side and 650 mm on the end side.
[0025]
In FIG. 2, one end (input end) and the other end (termination) of the antenna 5 are indicated by white circles. The side where the dotted line indicating the distance has reached is the input end, and the other is the end. For example, the distance between the input end and the terminal end of one antenna 5 is 150 mm, and the distance between adjacent antennas 5 is 100 mm.
[0026]
The one end (input end) of each antenna 5 is thus supplied with the high frequency power from the high frequency power source 7. The other end (termination) of each antenna 5 is connected to the side wall 12 of the vacuum chamber 1, for example. Thereby, since the side wall 12 of the vacuum chamber 1 is grounded, the other end of each antenna 5 is grounded. Note that a fixed or variable blocking capacitor (for example, a capacitance of 400 pF) that floats from the ground may be inserted on the input end side of the antenna 5.
[0027]
A plurality of antennas 5, one impedance matching device 6, and one high-frequency power source 7 (and a plate conductor) constitute one power supply unit. Therefore, one power supply unit is provided for each side wall 12 of the vacuum chamber 1. However, without being limited thereto, for example, two power supply units may be provided on the long side and one on the short side of the rectangular vacuum chamber 1. Moreover, you may increase the number of these as needed.
[0028]
As shown in FIG. 1, an exhaust port 3 for exhausting the inside of the vacuum chamber 1 and a substrate holder 4 in which a heater for heating a substrate (not shown) is embedded are provided below the vacuum chamber 1. . Thereby, when the processing substrate (substrate) 20 is installed on the substrate holder 4, plasma processing can be performed while heating the processing substrate 20. The processing substrate 20 is made of, for example, various plastics or glass suitable for processing a large area at a low temperature. Various thin films are formed or etched on the processing substrate 20 using plasma generated by using the plasma apparatus or the plasma control method of the present invention. Thereby, when various devices are formed using this, good electrical characteristics can be obtained.
[0029]
The plasma is generated by evacuating the vacuum chamber 1 from the exhaust port 3 to a predetermined degree of vacuum (for example, 1 × 10 ⁻⁴ Pa), and then introducing a gas according to the purpose from the gas introduction pipe 2 into the vacuum chamber 1. Thereafter, high frequency power is supplied from each high frequency power source 7 to each antenna 5 to generate plasma. The generation of plasma by high-frequency power supply to the plurality of antennas 5 is described in detail in JP-A-2001-35697.
[0030]
FIG. 4 shows the central part of the vacuum chamber 1 (for example, the top plate (for example, top plate)) when argon (Ar) plasma (Ar gas flow rate: 50 ccm, gas pressure: 1.33 Pa) is generated in the plasma apparatus of FIGS. The results of measurement using the Langmuir probe method for the plasma state of the ceiling) (at a position 160 mm vertically downward from the inner wall of 11) are shown. The Langmuir probe was introduced using an introduction flange (not shown) provided in the vacuum chamber 1, and the plasma state was measured.
[0031]
In FIG. 4A, the vertical axis represents the plasma potential Vp (volts; V) and the floating potential Vf (V), and the horizontal axis represents the high frequency power RFpower (watts; W). As shown in FIG. 4A, the plasma potential Vp and the floating potential Vf tend to decrease as the high-frequency power RFpower applied to the antenna 5 increases. In FIG. 4B, the vertical axis represents the plasma ion density Ni, the electron density Ne (cm ⁻¹ ) and the electron temperature Te (eV), and the horizontal axis represents the high frequency power RFpower (W). As shown in FIG. 4B, the plasma ion density Ni and the electron temperature Ne tend to increase depending on the high frequency power RFpower.
[0032]
In this way, by supplying high-frequency power in parallel to a large number of antennas 5 that do not circulate, it is possible to generate plasma with high density and low plasma potential suitable for various plasma processes.
[0033]
FIG. 5 shows the result of measuring the plasma uniformity in the vacuum chamber 1 (for example, a position of 195 mm vertically downward from the inner wall of the top plate 11) using the Langmuir probe method under the same conditions as in FIG. .
[0034]
The plasma uniformity was evaluated by the ion saturation current density (μA / cm ² ) obtained by the Langmuir probe method. The ion saturation current density is a value corresponding to the ion density. FIG. 5 shows the ion saturation current density of the plasma when the rectangular vacuum chamber 1 is viewed as shown in FIG. In FIG. 5, (1), (2),..., A, B,... Are virtual grids shown for reference in order to make the dependency on the position of the plasma easier to understand. .
[0035]
FIG. 5A shows the ion saturation current density when 1000 W of the same high frequency power is supplied from each of the high frequency (RF) power supplies 7A, 7B, 7C and 7D arranged on the respective side walls 12 of the vacuum chamber 1. Show the distribution. In FIG. 5A, the density in the vicinity of the antenna 5 on the side walls 12 of the high-frequency power supplies 7B and 7D in which the three antennas 5 are arranged is high, and the distribution is substantially U-shaped (indented in the center). I understand that.
[0036]
On the other hand, in FIG. 5B, the high-frequency power input from the high-frequency power sources 7A and 7C in which the four antennas 5 are arranged is 1300 W, and the high-frequency power input from the high-frequency power sources 7B and 7D in which the three antennas 5 are arranged. An ion saturation current density distribution in the case of 700 W is shown. In FIG. 5 (B), it can be seen that the current density distribution is smaller than that in FIG. 5 (A), and a rectangular density distribution similar to the shape of the vacuum chamber 1 is obtained. The areas of the grids {circle around (2)} to {circle around (4)} and the grids B to D (for example, the area of the central portion of the substrate 20) can be brought into a substantially uniform plasma state.
[0037]
In this way, the uniformity of plasma can be controlled by adjusting the high-frequency power input for each power supply unit. Further, by adjusting the high frequency power to the long side of the rectangular vacuum chamber 1 to be larger than that of the short side, plasma uniformity can be realized.
[0038]
FIG. 6 shows the configuration of the plasma apparatus of FIGS. 1 to 3 that further has a function of adjusting the phase difference of the high frequency transmitted from the high frequency power supply 7 for each power supply unit.
[0039]
In the plasma apparatus shown in FIG. 6, a waveform detector (or phase detector) 8 is provided on the output side of each impedance matching unit 6 disposed on the side wall 12 of each vacuum chamber 1. The waveform detector 8 takes in the high frequency waveform supplied to the antenna 5 as needed, and sends the waveform signal to the phase adjuster 9. The phase adjuster 9 detects a phase difference with each corresponding high-frequency power source 7 from the captured waveform signal, and based on the result, outputs a phase control signal to each high-frequency power source 7 so as to obtain a preset phase difference. send. When the high frequency power supply 7A is used as a reference, the detected phase difference is the phase difference between the high frequency power supply 7A and the high frequency power supply 7B, the phase difference between the high frequency power supply 7B and the high frequency power supply 7C, and the phase difference between the high frequency power supply 7C and the high frequency power supply 7D. . Each high frequency power source 7 adjusts the phase of the high frequency to be output in accordance with each phase control signal, and outputs an oscillation. Thereby, the phase difference between the high frequency power supplies 7 can be controlled.
[0040]
FIG. 7 shows argon plasma (gas flow rate: 50 ccm, gas pressure: 1.33 Pa, RFpower = 1000 W × 4 = 4000 W) when the phase difference between each of the high-frequency power sources 7 is changed in the plasma apparatus of FIG. The change of the plasma density in is shown.
[0041]
In FIG. 7, the vertical axis represents the plasma electron density Ne (cm ⁻³ ), and the horizontal axis represents the high-frequency phase difference (°). If the phase difference is 90 °, when the high frequency power source 7A is used as a reference, the phase difference between the high frequency power sources 7A and 7B, the phase difference between the high frequency power sources 7B and 7C, and the phase difference between the high frequency power sources 7C and 7D. The phase difference between the power supplies 7D and 7A is 90 °. As shown in FIG. 7, it can be seen that the plasma density increases by changing the phase difference. This is considered to be caused by the fact that the phase difference between the antennas 5 on each surface becomes large, and thus power is efficiently supplied to the plasma with less interference between the high frequencies. Moreover, it is thought that the phase shift between the side walls 12 of the vacuum chamber 1 causes electron acceleration between the antennas 5 on each side wall 12, and as a result, the plasma density is considered to increase. In the case of the rectangular vacuum chamber 1, it is considered that the phase difference between the four high-frequency power sources provided on each wall surface 12 is preferably 90 °. Such electron acceleration between the antennas 5 on each side wall 12 varies depending on various factors such as the shape of the antenna 5, the distance between the antennas 5, the gas pressure, and the size of the vacuum chamber 1. Therefore, since it is considered that there is an optimum phase difference each time, adjustment is performed so that the optimum phase difference is obtained.
[0042]
8 and 9 schematically show the configuration of the plasma apparatus when the shape of the antenna 5 (the length in the direction along the side wall 12 of the vacuum chamber 1) is changed in the plasma apparatus of FIGS. . 8 and 9, for convenience of illustration, the substrate holder 4 is omitted, and the processing substrate 20 is indicated by a dotted line.
[0043]
FIG. 8A shows an example in which three or four antennas 5 are introduced from the side walls 12 of each vacuum chamber 1, for a total of 14 antennas (corresponding to FIGS. 1 to 3). FIG. 8B shows an example in which two antennas 5 having a longer length in the direction of the side wall 12 of the vacuum chamber 1 of the antenna 5 are introduced from each of the side walls 12. FIG. 9 further shows an example in which a total of four antennas 5 are introduced from each of the side walls 12 with a large length in the direction of the side walls 12 of the vacuum chamber 1. Thus, when the length of the antenna 5 is increased, the inductance of the antenna 5 itself is increased. Further, the number of antennas 5 connected in parallel is reduced, so that the high frequency power supplied per line is increased. Therefore, the plasma state can be controlled by adjusting the length of the conductor portion in the vacuum chamber 1 of the antenna 5.
[0044]
FIG. 10 shows the plasma in the case of generating the Ar plasma (gas flow rate: 50 ccm, gas pressure: 1.33 Pa, RFpower = 1000 × 4 = 4000 W) in the case of the shape of each antenna 5 of FIGS. 8 and 9. It shows changes in the amplitude of the potential and the floating potential (this is a representative value representing the degree of plasma fluctuation).
[0045]
In FIG. 10, the vertical axis represents the amplitude (V) of the plasma potential and the floating potential, and the horizontal axis represents the antenna shape. In the antenna shape, the antenna A is the antenna shape of FIG. 8A, the antenna B is the antenna shape of FIG. 8B, and the antenna C is the antenna shape of FIG. FIG. 10 shows that the amplitude of the plasma potential and the floating potential increases as the length of the antenna 5 in the direction of the side wall 12 of the vacuum chamber 1 increases. At this time, the plasma density tended to increase as the length of the antenna 5 increased.
[0046]
The change in the plasma state accompanying the shape of the antenna 5 is that the inductance of the antenna 5 increases as the length of the antenna 5 increases, and the potential generated in the antenna 5 when high-frequency power is fed increases. This is considered to be caused by this, and as a result, the amplitude of the plasma potential and the floating potential is considered to have increased. In particular, in a plasma device having the shape of the antenna 5 such as the antenna C (FIG. 9), the plasma potential increases and the amplitude of the floating potential increases. For this reason, there is concern about ion damage during the plasma process, but on the other hand, it is effective when generating gas plasma with high ionization energy such as hydrogen and helium. Thus, in the plasma apparatus of the present invention, the plasma state can be controlled by changing the shape of the antenna 5 in accordance with the purpose of plasma generation and the gas type.
[0047]
As mentioned above, although this invention was demonstrated by the aspect of this invention, a various deformation | transformation is possible for this invention within the range of the main point.
[0048]
For example, the planar shape of the vacuum chamber 1 may be a circle instead of a rectangle. In this case, each of the plurality of antennas 5 is an arc (which is separated and insulated from each other) of concentric circles smaller than the inner circumference of the circular vacuum chamber 1, and has a high frequency of 1 / The arc is shorter than the length of 4 wavelengths. A plurality of high-frequency power sources 7 are provided.
[0049]
Further, m high-frequency power supplies 7 may be provided, and control may be performed so that the phases are sequentially shifted so that the vacuum chamber 1 makes one round and the phase is shifted by 360 °. In this case, m may be a divisor (eg, 2-6, 8-10, 12) of 360 (°).
[0050]
The plurality of antennas 5 may be introduced not only from the side wall 12 of the vacuum chamber 1 but also from the top plate 11 of the vacuum chamber 1. In this case, one or a plurality of high-frequency power sources 7 for the plurality of antennas 5 introduced from the top plate 11 are provided.
[0051]
Further, in the plasma apparatus of FIGS. 1 to 3 and 6, the plasma density can be reduced by adding an appropriate magnetic field generating means such as attaching a multicusp permanent magnet along the outer wall of the side wall 12 of the vacuum chamber 1. The aspect can be further improved.
[0052]
【The invention's effect】
As described above, according to the present invention, in the plasma device, the antenna is terminated without being circulated and is made shorter than a quarter wavelength of the high frequency, so that the inductance of the antenna is greatly reduced and the high frequency is reduced. It is possible to suppress the increase in voltage and prevent the occurrence of standing waves to prevent the uniformity of plasma from being lost, and to obtain a good plasma.
[0053]
In addition, according to the present invention, in the plasma apparatus, high-frequency power is supplied from a high-frequency power source provided for each power supply unit to a plurality of antennas in parallel and controlled, so that high-density and low plasma potential plasma is generated almost uniformly. And the antenna is made shorter than a quarter wavelength of the high frequency, thereby suppressing the increase of the high frequency voltage and preventing the standing wave from being generated, thereby preventing the uniformity of the plasma from being impaired. And good plasma can be obtained.
Further, according to the present invention, a plasma device, provided as the distance connecting the respective radio-frequency feed point and one or more antennas in a straight line is shorter than the length of 1/4-wavelength high-frequency plate Since the high-frequency power is supplied from the high-frequency power source to the antenna by the shaped conductor, the impedance can be reduced.
[0055]
Further, according to the present invention, since a thin film is formed or etched using plasma generated by using the plasma apparatus as described above in the plasma processing substrate, it is good when this is used. Electrical characteristics can be obtained.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a plasma apparatus according to the present invention, showing a cross-sectional structure thereof.
FIG. 2 is a configuration diagram of the plasma apparatus of the present invention, showing a partial cross-sectional structure thereof.
FIG. 3 is a configuration diagram of the plasma apparatus of the present invention and shows a planar structure thereof.
FIG. 4 shows the results of measurement of the plasma state at the center of the vacuum chamber of the plasma apparatus of the present invention.
FIG. 5 shows the result of measuring the plasma uniformity in the vacuum chamber of the plasma apparatus of the present invention.
FIG. 6 is a schematic view of a plasma apparatus having a function of adjusting a phase difference of a high frequency transmitted from each high frequency power source.
FIG. 7 shows a change in plasma density in argon plasma when the phase difference between each of the high-frequency power sources is changed.
FIG. 8 is a schematic view of a plasma apparatus when the antenna shape is changed.
FIG. 9 is a schematic view of a plasma apparatus when the antenna shape is changed.
FIG. 10 shows changes in amplitudes of plasma potential and floating potential in the case of each antenna shape.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Gas introduction pipe 3 Exhaust port 4 Substrate holder 5 Antenna 6 Impedance matching device 7 High frequency power supply 8 Waveform detector 9 Phase adjuster

Claims (8)

In an inductively coupled plasma device using high frequency discharge
Antennas to which high-frequency power is supplied, each of which is made of a linear or plate-like conductor whose surface is covered with an insulator and ends without going around the vacuum vessel and shorter than a quarter wavelength of the high frequency. Equipped with multiple antennas in the vacuum vessel,
High frequency power is supplied in parallel to each of the one or more antennas from a high frequency power source by a plate-like conductor provided outside the vacuum vessel,
The plate-like conductor is provided so that a distance obtained by connecting the high-frequency feeding point and each of the one or more antennas with a straight line is shorter than a quarter-wave length of a high frequency. apparatus. Dividing the plurality of antennas into a plurality of groups each consisting of one or more antennas;
A high frequency power supply corresponding to each of the groups is provided,
In each of the groups, high-frequency power is supplied in parallel to each of one or a plurality of antennas belonging to the group from the high-frequency power source provided corresponding to the group by the plate conductor. The plasma apparatus according to claim 1. The plate-like conductors are provided corresponding to the high-frequency power source, each of which is rectangular, and the direction in which the corresponding one or more antennas are arranged is the length direction and the direction perpendicular thereto is the width direction. In this case, the distance obtained by connecting the high-frequency feeding point and each of the corresponding one or more antennas with a straight line has a width that is shorter than the length of a quarter wavelength of the high frequency. Or the plasma apparatus of 2. The vacuum vessel has a rectangular planar shape,
A plurality of antennas provided on the four sides by providing a plurality of antennas on each of the four sides of the rectangular vacuum container to form the group, and providing the high-frequency power source corresponding to each of the four sides. The plasma apparatus according to claim 2, wherein high-frequency power is supplied in parallel. The plasma apparatus according to claim 2, wherein the high-frequency power to be supplied is adjusted for each high-frequency power supply corresponding to each of the groups. The vacuum vessel has a rectangular planar shape,
A plurality of antennas in each of the four sides of the vacuum vessel of the rectangular, claim the RF power to the rectangular long side, characterized by being larger than the high-frequency power to said rectangular short side 5 The plasma apparatus according to 1. A phase detector provided corresponding to each of the high-frequency power sources provided corresponding to each of the four sides, and detecting a phase of a high frequency supplied from the corresponding high-frequency power source;
The plasma apparatus according to claim 4, further comprising: a phase adjuster that adjusts a high-frequency phase difference between each of the high-frequency power sources based on a detection result from each of the phase detectors. A plasma-treated substrate, wherein a thin film is formed or etched on the substrate using the plasma generated using the plasma apparatus according to claim 1.

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