WO2011013460A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
WO2011013460A1
WO2011013460A1 PCT/JP2010/060199 JP2010060199W WO2011013460A1 WO 2011013460 A1 WO2011013460 A1 WO 2011013460A1 JP 2010060199 W JP2010060199 W JP 2010060199W WO 2011013460 A1 WO2011013460 A1 WO 2011013460A1
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Prior art keywords
electrode
auxiliary
auxiliary electrode
processing apparatus
plasma processing
Prior art date
Application number
PCT/JP2010/060199
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French (fr)
Japanese (ja)
Inventor
守口 正生
星野 淳之
研二 中西
英治 高橋
Original Assignee
シャープ株式会社
日新電機株式会社
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Priority to JP2009175256 priority Critical
Priority to JP2009-175256 priority
Application filed by シャープ株式会社, 日新電機株式会社 filed Critical シャープ株式会社
Publication of WO2011013460A1 publication Critical patent/WO2011013460A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32577Electrical connecting means

Abstract

A plasma processing apparatus (101) is provided with: a chamber, which includes side walls (12) surrounding the outer circumference of the chamber, and a top plate (11) covering the upper side of the chamber; a stage (14) for disposing a subject to be processed (13) in the chamber; and a plurality of main electrodes (15) each of which includes two main electrode first portions that penetrate the top plate (11), and one main electrode second portion that connects together, on the side lower than the lower surface of the top plate (11), the lower ends of the main electrode first portions; and auxiliary electrodes (16), each of which includes two auxiliary electrode first portions that penetrate each of the side walls (12), and one auxiliary electrode second portion that connects together the lower ends of the auxiliary electrode first portions in the chamber.

Description

Plasma processing equipment

The present invention relates to a plasma processing apparatus (also referred to as “plasma apparatus”).

A plasma apparatus based on the prior art is described in, for example, Japanese Patent Application Laid-Open No. 2004-39719 (Patent Document 1), Japanese Patent Application Laid-Open No. 2007-123008 (Patent Document 2), and Japanese Patent Application Laid-Open No. 2007-149639 (Patent Document 3). ing.

Patent Document 1 discloses a plasma apparatus in which a plurality of U-shaped antennas are arranged so as to protrude inward from a side wall surrounding the outer periphery of a vacuum chamber. In this configuration, the substrate as a processing target installed in the center is surrounded by the antenna.

Patent Documents 2 and 3 disclose plasma devices in which a plurality of U-shaped antennas are arranged in parallel so as to protrude downward from the top plate of the plasma generation chamber.

On the other hand, in the case where the object of plasma processing is a substrate and it is required to perform different processing one after another on a single substrate as in the manufacturing site of a liquid crystal display panel, the cluster type substrate shown in FIG. A leaf treatment device can be used. The cluster type single wafer processing apparatus is a combination of an arm 81, a load lock chamber 82, a heat chamber 83, and film forming chambers 84a, 84b, 84c, and 84d so as to surround the arm 81. The load lock chamber 82, the heat chamber 83, and the film forming chambers 84a, 84b, 84c, and 84d are arranged radially. The substrate is carried in and out through the load lock chamber 82. The arm 81 arranged at the center can change its direction by rotating and can expand and contract. When the arm 81 extends, the tip of the arm 81 can reach the inside of the load lock chamber 82, the heat chamber 83, or the film forming chambers 84a, 84b, 84c, 84d. The tip of the arm 81 can carry a substrate. Therefore, the substrate can be transferred between the load lock chamber 82, the heat chamber 83, or the film forming chambers 84a, 84b, 84c, and 84d using the movement of the arm 81. As described above, when the plasma apparatuses as the film formation chambers are arranged radially, it is required to reduce the area occupied by each film formation chamber with respect to the floor as much as possible.

JP 2004-39719 A JP 2007-123008 A JP 2007-149639 A

In the plasma apparatus having the configuration shown in Patent Document 1, a film is formed on the entire surface of the substrate by an antenna protruding inward from the side wall. When the size of the substrate is increased, the size of the chamber is also increased. In this case, the distance from the antenna is significantly different between the central portion and the outer edge portion of the substrate. Therefore, the film formation state differs between the central portion and the outer edge portion of the substrate. That is, the so-called “in-plane distribution” becomes non-uniform.

In the plasma apparatus having the configuration shown in Patent Documents 2 and 3, antennas are arranged so as to protrude downward from the top plate of the chamber, and plasma is generated in the space in the chamber by these antennas. At this time, in the vicinity of the side wall, the plasma distribution is affected by the presence of the side wall. In order not to be affected by the side wall, the chamber needs to be sufficiently large. However, since the area occupied by the apparatus with respect to the floor is required to be as small as possible, it is not preferable to enlarge the chamber.

Therefore, an object of the present invention is to provide a plasma processing apparatus capable of reducing the degree to which the plasma distribution in the chamber is affected by the side wall without enlarging the chamber.

In order to achieve the above object, a plasma processing apparatus according to the present invention includes a chamber including a side wall that surrounds the outer periphery and a top plate that closes the upper side, a stage for placing a processing object in the chamber, and the ceiling. A plurality of main electrodes each including two main electrode first portions penetrating the plate and one main electrode second portion connecting the lower ends of the main electrode first portions to each other below the lower surface of the top plate. Auxiliary electrodes each including an electrode, two auxiliary electrode first portions penetrating the side wall, and one auxiliary electrode second portion connecting the ends of the auxiliary electrode first portions to each other inside the chamber; Is provided.

According to the present invention, since the plasma distribution in the vicinity of the side wall can be adjusted by the auxiliary electrode, the degree of influence of the side wall on the plasma distribution in the chamber can be reduced without enlarging the chamber.

It is sectional drawing of the plasma processing apparatus in Embodiment 1 based on this invention. It is a typical top view of the plasma processing apparatus in Embodiment 1 based on this invention. It is an expanded sectional view of the main electrode vicinity of the plasma processing apparatus in Embodiment 1 based on this invention. It is an expanded sectional view of the auxiliary electrode vicinity of the plasma processing apparatus in Embodiment 1 based on this invention. It is explanatory drawing of the preferable positional relationship of the main electrode and auxiliary electrode of the plasma processing apparatus in Embodiment 1 based on this invention. It is a schematic top view of the preferable modification of the plasma processing apparatus in Embodiment 1 based on this invention. It is sectional drawing of the plasma processing apparatus in Embodiment 2 based on this invention. It is a typical top view of the plasma processing apparatus in Embodiment 2 based on this invention. It is an expanded sectional view of the auxiliary electrode vicinity of the plasma processing apparatus in Embodiment 2 based on this invention. It is sectional drawing of the preferable modification of the plasma processing apparatus in Embodiment 2 based on this invention. It is a typical top view of the plasma processing apparatus in Embodiment 3 based on this invention. It is an expanded sectional view of the corner auxiliary electrode vicinity of the plasma processing apparatus in Embodiment 3 based on this invention. It is explanatory drawing of the 1st example of the phase control in the plasma processing apparatus based on this invention. It is explanatory drawing of the 2nd example of the phase control in the plasma processing apparatus based on this invention. It is a top view of the cluster type single wafer processing apparatus based on a prior art.

(Embodiment 1)
A plasma processing apparatus 101 according to the first embodiment of the present invention will be described with reference to FIGS. A cross-sectional view of the plasma processing apparatus 101 according to the present embodiment is shown in FIG. 1, and a schematic plan view is shown in FIG. FIG. 2 corresponds to a state in which the top is seen through the top plate from above. In FIG. 2, the top plate itself is not shown, but the electrodes protruding below the top plate are shown. As shown in FIGS. 1 and 2, the plasma processing apparatus 101 includes a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side, and a stage 14 for disposing a processing object 13 in the chamber. And a plurality of main electrodes 15 and a plurality of auxiliary electrodes 16. FIG. 3 shows an enlarged sectional view in the vicinity of the main electrode 15 in this plasma processing apparatus 101, and FIG. 4 shows an enlarged sectional view seen from the side in the vicinity of the auxiliary electrode 16, respectively. As shown in FIG. 3, the plurality of main electrodes 15 are composed of a main electrode vertical bar portion 15 y as two main electrode first portions penetrating the top plate 11 and a main electrode vertical bar below the lower surface of the top plate 11. The main electrode horizontal bar portion 15x as one main electrode second portion that connects the lower ends of the portion 15y to each other is included. In the portion where the plurality of main electrodes 15 penetrate the top plate 11, the insulating member 21 is disposed so as to surround each main electrode vertical bar portion 15 y, thereby ensuring insulation between the side wall 12 and each main electrode 15. Has been. As shown in FIG. 4, the plurality of auxiliary electrodes 16 include two auxiliary electrode horizontal bar portions 16 x as first two portions of the auxiliary electrodes penetrating the side wall 12 and ends of the auxiliary electrode horizontal bar portions 16 x inside the chamber. And an auxiliary electrode bridge portion 16v as a second portion of one auxiliary electrode that connects the two to each other. In the portion where the plurality of auxiliary electrodes 16 penetrate the side wall 12, the insulating member 22 is disposed so as to surround each auxiliary electrode horizontal bar portion 16 x, thereby ensuring insulation between the side wall 12 and each auxiliary electrode 16. ing.

As shown in FIG. 1, the processing object 13 is a plate-like member. In the present embodiment, the processing object 13 is, for example, a glass substrate. This may be a glass substrate for a liquid crystal display panel, for example.

As shown in FIG. 1, the side wall 12 includes surfaces 12a, 12b, 12c, and 12d.
An RF power source 8 is connected to the plurality of main electrodes 15 via a matching network 9. An RF power source 18 is connected to the plurality of auxiliary electrodes 16 via a matching network 19. The RF power source 18 for the auxiliary electrode 16 is provided separately from the RF power source 8 for the main electrode 15. The RF power supply 8 and the RF power supply 18 are controlled by the phase control unit 7.

When the plasma processing apparatus 101 in the present embodiment is operated, the plasma 10 is mainly generated by the main electrode 15 in the space in the chamber. The plasma 10 performs processing such as film formation on the surface of the processing target 13.

In the present embodiment, since the plurality of auxiliary electrodes 16 are provided on the side wall 12, the plasma distribution in the region near the side wall 12 when the plasma 10 is generated can be adjusted by the auxiliary electrode 16. When the plasma 10 is generated only by the main electrode 15, the plasma distribution in the vicinity of the side wall 12 tends to be irregular due to the influence of the side wall 12, but in this embodiment, the auxiliary electrode 16 is in the vicinity of the side wall 12. Therefore, a plasma distribution equivalent to the plasma distribution in the central portion of the top plate 11 can be generated in the vicinity of the side wall 12 by supplying appropriate power to the auxiliary electrode 16. Therefore, in the present embodiment, the plasma distribution in the vicinity of the side wall can be adjusted by the auxiliary electrode, so that the degree of influence of the side wall on the plasma distribution in the chamber can be reduced without enlarging the chamber.

As shown in FIG. 2, it is preferable that the plurality of auxiliary electrodes 16 are arranged at positions where at least the extension line of the main electrode horizontal bar portion 15x and the side wall 12 intersect. A plurality of auxiliary electrodes 16 are disposed on the two surfaces 12 a and 12 c of the side wall 12. The plurality of auxiliary electrodes 16 are respectively disposed on the extended lines of the main electrode horizontal bar portion 15x among the surfaces 12a and 12c. With such a configuration, it is easy to create a situation similar to that the main electrode is further arranged in the vicinity of the side wall by the auxiliary electrode.

As shown in FIG. 5, at least one of the two auxiliary electrode horizontal bar portions 16x included in each of the plurality of auxiliary electrodes 16 is disposed so as to have the same height as the main electrode horizontal bar portion 15x. It is preferable that If this is the case, the auxiliary electrode horizontal bar portion can be made to function similar to the main electrode horizontal bar portion. This is because the auxiliary electrode is easy to produce.

4 and 5, the two auxiliary electrode horizontal bar portions 16x included in each of the plurality of auxiliary electrodes 16 are preferably parallel to each other and aligned in the vertical direction. This is because the auxiliary electrode can be accommodated in the same plane as the main electrode row, and as a result, the plasma distribution can be easily managed.

In the present embodiment, an example in which a plurality of auxiliary electrodes 16 are provided in the plasma processing apparatus has been shown, but the number of auxiliary electrodes 16 is not limited to a plurality and may be single.

In the example shown in FIG. 2, in order to narrow down the object of explanation, the configuration in which the auxiliary electrode is provided only on the two surfaces 12 a and 12 c of the side wall 12 is shown. It is desirable to improve the plasma distribution on the two surfaces 12b and 12d. Therefore, in order to improve the plasma distribution in the entire circumference of the side wall 12, other types of auxiliary electrodes 26 are provided on the left and right surfaces 12b and 12d of the side wall 12, as in the plasma processing apparatus 101h shown in FIG. Is preferably provided. An RF power source 28 is connected to the auxiliary electrode 26 via a matching network 29. Other types of auxiliary electrode 26 will be described in detail in the second embodiment.

(Embodiment 2)
With reference to FIG. 7 and FIG. 8, the plasma processing apparatus 102 in Embodiment 2 based on this invention is demonstrated. A cross-sectional view of the plasma processing apparatus 102 in the present embodiment is shown in FIG. 7, and a schematic plan view is shown in FIG. The configuration of the plasma processing apparatus 102 in the present embodiment is basically the same as that of the plasma processing apparatus 101 described in the first embodiment, but the arrangement of auxiliary electrodes is different. The plasma processing apparatus 102 includes a plurality of auxiliary electrodes 26 instead of the plurality of auxiliary electrodes 16 described in the first embodiment. FIG. 9 shows an enlarged cross-sectional view viewed from above the vicinity of the auxiliary electrode 26. The auxiliary electrode 26 includes two auxiliary electrode horizontal bar portions 26x as the first auxiliary electrode first portions penetrating the side wall 12 and one auxiliary electrode horizontal bar portion 26x that connects the ends of the auxiliary electrode horizontal bar portions 26x to each other inside the chamber. And an auxiliary electrode bridge portion 26v as two portions. As shown in FIGS. 7 and 8, the two auxiliary electrode horizontal bar portions 26 x included in each of the plurality of auxiliary electrodes 26 are parallel to each other and aligned in the horizontal direction. The plurality of auxiliary electrodes 26 may be provided only on a part of the side wall 12, but in the present embodiment, as shown in FIG. 8, the surfaces 12 a, 12 b, 12 c, 12 d of the side surface 12. The auxiliary electrode 26 is arranged on all of the above.

In the present embodiment, since the plurality of auxiliary electrodes 26 are provided on the side wall 12, the plasma distribution in the region near the side wall 12 when the plasma 10 is generated can be adjusted by the auxiliary electrode 26. When the plasma 10 is generated only by the main electrode 15, the plasma distribution in the vicinity of the side wall 12 tends to be irregular due to the influence of the side wall 12, but in this embodiment, the auxiliary electrode 26 is in the vicinity of the side wall 12. Therefore, a plasma distribution equivalent to the plasma distribution at the center of the top plate 11 can be generated in the vicinity of the side wall 12 by applying appropriate power to the auxiliary electrode 26.

Furthermore, although the auxiliary electrode 16 described in the first embodiment occupies a certain width in the vertical direction, the auxiliary electrode 26 in the present embodiment can make the space occupied in the vertical direction extremely small. In general, at least one surface of the side wall is provided with an opening for taking the processing object 13 in and out. If the auxiliary electrode 26 is also provided on the surface provided with such an opening, the upper side of the opening is provided. This is advantageous because it can be arranged in a small space. Further, when it is desired to reduce the distance between the processing target 13 and the top plate 11 as much as possible, the use of the auxiliary electrode 26 in the present embodiment is advantageous because the space occupied in the vertical direction can be reduced.

The plurality of auxiliary electrodes are preferably arranged on at least two surfaces of the side wall 12 parallel to the main electrode horizontal bar portion 15x as the main electrode second portion. In the present embodiment, this condition is satisfied, and the plurality of auxiliary electrodes 26 are arranged on two surfaces of the side wall 12 parallel to the main electrode horizontal bar portion 15x, that is, the surfaces 12b and 12d. Furthermore, in this embodiment, since the auxiliary electrode 26 is provided on all four surfaces of the side wall 12, the plasma distribution in the vicinity of the side wall 12 can be adjusted over the entire circumference of the side wall 12.

More preferably in the present embodiment, as shown in FIG. 9, the auxiliary electrode bridge portion 26v as the auxiliary electrode second portion has a rod shape extending in the horizontal direction. The auxiliary electrode bridge portion 26v is arranged so as to correspond to the main electrode 15 as seen in the surfaces 12a and 12c of FIG. That is, they are arranged so as to correspond to the main electrode horizontal bar portions 15x shown in FIG. Here, “corresponding” does not require the pitches to be equal. If they are arranged in this way, it is easy to control the plasma distribution.

In the present embodiment, as in the plasma processing apparatus 102 i shown in FIG. 10, the auxiliary electrode bridge portion 26 v that is a bar shape extending in the horizontal direction has the same height as the main electrode horizontal bar portion 15 x of the main electrode 15. It is preferable. Such a configuration can also contribute to facilitating control of the plasma distribution. Further, when the auxiliary electrode 26 is arranged close to the top plate 11 to the same height as the main electrode horizontal bar portion 15x, the processing object 13 is taken in and out from the opening (not shown) of the side wall 12. In addition, the auxiliary electrode 26 is preferable because it does not hinder access.

In FIG. 8, four auxiliary electrodes 26 provided on the surfaces 12 b and 12 d of the side wall 12 are drawn, and their pitches are slightly different from the pitches of the main electrodes 15. It is more preferable that the auxiliary electrodes 26 exist at positions corresponding to the main electrodes 15 by aligning the pitches of the auxiliary electrodes 26. This is because the plasma distribution can be easily managed.

(Embodiment 3)
With reference to FIGS. 11 and 12, plasma processing apparatus 103 according to the third embodiment of the present invention will be described. FIG. 11 shows a schematic plan view of the plasma processing apparatus 103 in the present embodiment. FIG. 12 shows an enlarged view of the upper right corner portion of FIG. The configuration of plasma processing apparatus 103 in the present embodiment is basically the same as that described in the first and second embodiments. As shown in FIG. 11, in the plasma processing apparatus 103, the auxiliary electrodes 16 as described in the first embodiment are arranged on the surfaces 12 a and 12 c of the side wall 12. The auxiliary electrodes 26 as described in the second embodiment are arranged on the surfaces 12b and 12d.

The side wall 12 has a corner portion 31 that is bent substantially at a right angle, and the plurality of auxiliary electrodes include a corner auxiliary electrode 36 disposed in the corner portion 31. The auxiliary electrode horizontal bar portions 36x1 and 36x2 serving as the first two portions of the two auxiliary electrodes included in each of the corner auxiliary electrodes 36 pass through one surface of the side wall 12 that is perpendicular to and adjacent to each other. In the example shown in FIG. 12, the auxiliary electrode horizontal bar portions 36x1 and 36x2 penetrate the surfaces 12a and 12d, respectively.

In the present embodiment, since the corner auxiliary electrode is provided in the corner portion, it becomes easy to control the plasma distribution even in the vicinity of the corner portion in the chamber.

In addition, it is preferable that the corner auxiliary electrode 36 is disposed so as to be the same height as the main electrode horizontal bar portion. If it becomes like this, it can contribute to making control of plasma distribution easy. Further, if the corner auxiliary electrode 36 is disposed close to the top plate 11 so as to be the same height as the main electrode horizontal bar portion as the main electrode second portion, the processing is performed from the opening (not shown) of the side wall 12. The auxiliary electrode 26 is also preferable when the object 13 is taken in and out, because it does not hinder the taking in and out.

1, 2, 6 to 8, 10, and 11, the plurality of auxiliary electrodes preferably have a power source that is independent from the plurality of main electrodes 15. This applies to both the auxiliary electrode 16 shown in the first embodiment and the auxiliary electrode 26 shown in the second embodiment. In these examples, the plurality of main electrodes 15 have the RF power source 8, while the plurality of auxiliary electrodes 16 have the RF power source 18 as a completely independent power source. Since the power supply is independent and independent between the auxiliary electrode and the main electrode in this way, the auxiliary electrode can be controlled independently from the main electrode, so that the plasma distribution can be easily managed. Become.

In each of the above embodiments, an example in which each of the main electrode and the auxiliary electrode has a U shape formed by a combination of a straight portion and a curved portion is shown. That is, these U-shapes are formed into U-shapes by possessing two portions bent by approximately 90 °. However, the shapes of the main electrode and the auxiliary electrode are not limited to such a U shape. In each of the above embodiments, the main electrode first portion and the main electrode second portion are each linear and both are substantially perpendicular, but these portions are not necessarily linear. It may be curved. Even if it is a straight line, it may have a different angle instead of a right angle. The main electrode may have a shape consisting only of a curve. The main electrode may be semicircular, for example. When the main electrode is semicircular, it is possible to regard arc-shaped constant portions as the main electrode first portion and the main electrode second portion, respectively. The same applies to the shapes of the auxiliary electrode, the auxiliary electrode first portion, and the auxiliary electrode second portion. Thus, the auxiliary electrode may be semicircular, for example. When the auxiliary electrode is semicircular, it is possible to regard the arc-shaped constant portions as the auxiliary electrode first portion and the auxiliary electrode second portion, respectively.

An example of phase control will be described with reference to FIGS.
(Phase control example 1)
A first example of phase control is shown in FIG. Although the plurality of main electrodes 15 are actually arranged in a matrix, attention is paid to one row arranged along the direction 91 among them. In the example shown in FIG. 13, three main electrodes 15 are included in one row. The direction 91 and the longitudinal direction 93 of each main electrode are perpendicular to each other. As an example of the auxiliary electrode, attention is paid to the auxiliary electrode 26 located at a position corresponding to the one row of main electrodes 15. If attention is paid to the main electrodes 15 belonging to one row, the same side of each main electrode, that is, the lower side in FIG. 13 is grounded, and the opposite side to the ground, that is, the upper side in FIG. It has become. Similarly, in the auxiliary electrode 26, the lower side in FIG. 13 is grounded, and the upper side in FIG. That is, the direction of power supply to each electrode is common. In this case, it is conceivable to make a difference in the phase of the supplied power. For example, when the phase of power applied to one main electrode 15 at the left end in FIG. 13 is a reference, that is, 0 °, power that is 180 ° different in phase is supplied to the adjacent main electrode 15. Further, the next main electrode 15 is supplied with the same phase power as the reference. The phase is also different by 180 ° between the main electrode 15 and the auxiliary electrode 26 disposed at the position closest to the auxiliary electrode 26.

(Phase control example 2)
A second example of phase control is shown in FIG. In this example, the phases of power supplied by the main electrodes 15 arranged in a line along the direction 91 and the auxiliary electrode 26 at a position corresponding to this line are the same. The direction of supplying power is alternately reversed for each electrode. That is, in the row of the main electrodes 15, when the adjacent main electrodes 15 are compared with each other, the grounded sides are reversed. Even when one main electrode 15 located closest to the auxiliary electrode 26 in the row of the main electrodes 15 is compared with the auxiliary electrode 26, the grounded side is reversed.

Here, although the first example and the second example of phase control are shown, any of these phase controls may be adopted in each embodiment based on the present invention.

It should be noted that the above-described embodiment disclosed herein is illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

The present invention can be used for a plasma processing apparatus.

7 Phase control unit, 8, 18, 28 RF power supply, 9, 19, 29 matching network, 10 plasma, 11 top plate, 12 side walls, 12a, 12b, 12c, 12d surface, 13 processing object, 14 stage, 15 main Electrode, 15x main electrode horizontal bar part, 15y main electrode vertical bar part, 16, 26 auxiliary electrode, 16v, 26v auxiliary electrode bridge part, 16x, 26x auxiliary electrode horizontal bar part, 21, 22 insulating member, 31 corner part, 36 Corner auxiliary electrode, 81 arm, 82 load lock chamber, 83 heat chamber, 84a, 84b, 84c, 84d film forming chamber, 91 direction, 93 (main electrode) longitudinal direction, 101, 101h, 102, 102i, 103 plasma treatment apparatus.

Claims (10)

  1. A chamber including a side wall (12) surrounding the outer periphery and a top plate (11) closing the upper side;
    A stage (14) for disposing a processing object (13) in the chamber;
    Plural main electrode first portions penetrating the top plate and a single main electrode second portion connecting the lower ends of the main electrode first portions to each other below the lower surface of the top plate. Main electrode (15),
    Auxiliary electrodes (16) each including two auxiliary electrode first portions penetrating the side walls and one auxiliary electrode second portion connecting the ends of the auxiliary electrode first portions to each other inside the chamber; A plasma processing apparatus.
  2. The plasma processing apparatus according to claim 1, wherein the auxiliary electrode is disposed at a position where at least an extension line of the second portion of the main electrode and the side wall intersect each other.
  3. 2. The first or second claim, wherein at least one of the two auxiliary electrode first portions included in the auxiliary electrode is arranged to have the same height as the main electrode second portion. Item 3. The plasma processing apparatus according to item 2.
  4. 4. The plasma according to claim 1, wherein the two auxiliary electrode first portions included in each of the plurality of auxiliary electrodes are parallel to each other and aligned in the vertical direction. 5. Processing equipment.
  5. 4. The plasma according to claim 1, wherein the two auxiliary electrode first portions included in each of the plurality of auxiliary electrodes are parallel to each other and aligned in the horizontal direction. 5. Processing equipment.
  6. The plasma processing according to claim 1 or 5, wherein the plurality of auxiliary electrodes are disposed at least on two surfaces (12b, 12d) parallel to the main electrode second portion of the side wall. apparatus.
  7. The plasma processing apparatus according to claim 5 or 6, wherein the second part of the auxiliary electrode has a bar shape extending in the horizontal direction and is arranged so as to correspond to the second part of the main electrode.
  8. The side wall has a corner portion (31) that bends at a substantially right angle;
    The plurality of auxiliary electrodes include a corner auxiliary electrode (36) disposed at the corner portion, and the two auxiliary electrode first portions included in each of the corner auxiliary electrodes are perpendicular to and adjacent to the side wall. The plasma processing apparatus according to claim 1, wherein each of the surfaces to be penetrated passes through one surface.
  9. The plasma processing apparatus according to claim 8, wherein the corner auxiliary electrode is arranged to be at the same height as the second portion of the main electrode.
  10. The plasma processing apparatus according to any one of claims 1 to 9, wherein the plurality of auxiliary electrodes have a power source independent of the plurality of main electrodes.
PCT/JP2010/060199 2009-07-28 2010-06-16 Plasma processing apparatus WO2011013460A1 (en)

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JP2009-175256 2009-07-28

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Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2002105645A (en) * 2000-10-03 2002-04-10 Mitsubishi Heavy Ind Ltd Cleaning method of plasma cvd apparatus
JP2003174014A (en) * 2001-12-07 2003-06-20 Nec Kansai Ltd Dry etching system and its plasma cleaning method
JP2004039719A (en) * 2002-07-01 2004-02-05 Akinori Ebe Plasma system, plasma control method, and plasma processed substrate
JP2007123008A (en) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd Plasma generation method and its device, and plasma processing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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