KR20160038787A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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KR20160038787A
KR20160038787A KR1020150135449A KR20150135449A KR20160038787A KR 20160038787 A KR20160038787 A KR 20160038787A KR 1020150135449 A KR1020150135449 A KR 1020150135449A KR 20150135449 A KR20150135449 A KR 20150135449A KR 20160038787 A KR20160038787 A KR 20160038787A
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South Korea
Prior art keywords
antenna
inductively coupled
plurality
holding portion
corresponding
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KR1020150135449A
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Korean (ko)
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KR101699177B1 (en
Inventor
고지 하다
사토시 야마모토
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가부시키가이샤 스크린 홀딩스
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Priority to JPJP-P-2014-199708 priority Critical
Priority to JP2014199708A priority patent/JP6373707B2/en
Application filed by 가부시키가이샤 스크린 홀딩스 filed Critical 가부시키가이샤 스크린 홀딩스
Publication of KR20160038787A publication Critical patent/KR20160038787A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

Uniformity of plasma ion density is improved. A plasma processing apparatus includes a chamber; an object maintaining unit for maintaining an object to be processed in the chamber; at least one inductive coupling antenna of which the number of windings is less than one turn; a high-frequency power source for supplying high-frequency power to the at least one inductive coupling antenna; and at least one antenna maintaining unit for maintaining at least one inductive coupling antenna to one wall part to allow one inductive coupling antenna to protrude from one wall part of the chamber to the inside of the chamber. Each of the at least one antenna maintaining unit maintains a corresponding inductive coupling antenna at both ends thereof so that a direction of a segment connecting both ends of the inductive coupling antenna corresponding to one of the at least one inductive coupling antenna is changeable on the surface crossing the protruding direction of the inductive coupling antenna.

Description

PLASMA PROCESSING APPARATUS

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for generating plasma to perform predetermined processing.

As such a plasma processing apparatus, Patent Document 1 discloses a plasma processing apparatus in which a high frequency electric power is supplied to an antenna which is completed without spurting and which is made of a linear or plate-shaped conductor whose length is shorter than the length of a 1/4 wavelength of high frequency to generate a high frequency magnetic field, To generate a plasma to perform surface treatment such as thin film formation on the substrate surface. This apparatus is provided with a plurality of antennas on each of four sides of a vacuum container having a rectangular planar shape and supplies a high frequency power to a plurality of antennas provided on four sides in parallel to perform processing on a large area substrate.

Japanese Patent No. 3751909

For example, in order to form a uniform film thickness by plasma CVD or uniform treatment by plasma etching, it is required to make the plasma ion density uniform in the space in the vicinity of the object.

However, in plasma CVD, the reaction process in the chamber becomes a complicated process that is affected by the pressure in the chamber, the flow rate and composition of the process gas, the distance between each antenna and the wall surface in the chamber, and the like. For this reason, in the plasma processing apparatus of Patent Document 1, there is a problem that it is difficult to uniformize the plasma ion density in the space near the object. Further, even when the number of antennas is small, for example, in the case where the plasma processing apparatus has one antenna, there is a problem that it is difficult to uniformize the plasma ion density because the influence of the wall surface in the chamber becomes larger.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it is an object of the present invention to provide a technique capable of increasing the uniformity of the plasma ion density.

In order to solve the above problems, a plasma processing apparatus according to a first aspect of the present invention includes a chamber, an object holding unit for holding an object to be processed in the chamber, at least one inductively coupled antenna A high frequency power source for supplying high frequency power to the at least one inductively coupled antenna; and a high frequency power supply for supplying at least one inductively coupled antenna to the at least one inductively coupled antenna so that the at least one inductively coupled antenna protrudes from the wall of the chamber into the chamber. Wherein each of the at least one antenna holding part includes at least one antenna holding part for holding a line segment connecting both ends of the corresponding inductively coupled antenna among the at least one inductively coupled antenna Directional antenna is changeable in a plane intersecting with the projecting direction of the inductively coupled antenna, And holds the corresponding inductively coupled antenna at both ends thereof.

The plasma processing apparatus according to the second aspect is the plasma processing apparatus according to the first aspect, wherein the at least one inductively coupled antenna is a plurality of inductively coupled antennas, and the at least one antenna holding unit includes a plurality of antennas Wherein the plurality of antenna holding units hold the plurality of inductively coupled antennas such that a direction of a line segment connecting both ends of each of the plurality of inductively coupled antennas can be independently changed.

The plasma processing apparatus according to the third aspect is the plasma processing apparatus according to the second aspect, wherein the plurality of antenna holding sections are arranged such that the plurality of inductively coupled antennas are arranged in a line along a predetermined virtual axis extending along the wall section So as to hold the plurality of inductively coupled antennas.

The plasma processing apparatus according to the fourth aspect is the plasma processing apparatus according to the third aspect, wherein the plasma processing apparatus according to the fourth aspect comprises a plurality of inductively coupled antennas arranged in a line, And further includes a pair of shield members.

The plasma processing apparatus according to the fifth aspect is the plasma processing apparatus according to the fourth aspect, wherein at least one of the pair of shield members has at least one of a position along the virtual axis and a height from the wall portion of the chamber As shown in Fig.

The plasma processing apparatus according to the sixth aspect is the plasma processing apparatus according to any one of the first to fifth aspects, wherein each of the at least one antenna holding unit includes at least one inductively coupled antenna Type antenna and a corresponding holding portion are defined by the inductively coupled antenna and the antenna holding portion corresponding to each other among the at least one inductively coupled antenna and the at least one antenna holding portion, The through hole for the antenna having the shape corresponding to the corresponding holding portion is formed in the wall portion of the chamber so that the corresponding antenna held in the corresponding holding portion can be inserted and closed by the corresponding holding portion And a plurality of turns of the corresponding holding portion along the circumferential direction of the through hole for the antenna The first and second attachment structures for detachably attaching the peripheral portion of the corresponding holding portion to the peripheral portion of the antenna through hole so that the corresponding holding portion covers the through hole for the antenna, And the corresponding holding portion holding the corresponding antenna is provided in the peripheral portion of the through hole for the antenna among the wall portions, and the corresponding antenna is projected into the chamber to close the antenna through hole , And the peripheral portion is attached to the peripheral portion by the first and second attachment structures.

The plasma processing apparatus according to the seventh aspect is the plasma processing apparatus according to the sixth aspect, wherein the first attachment structure provided on the periphery of the corresponding holding section is formed on a first concentric circle defined on the periphery, Wherein the second attachment structure provided on the peripheral portion of the through hole for the antenna has a diameter equal to the diameter of the first concentric circle on the surface of the peripheral portion facing the antenna holding portion, And a plurality of blind holes formed on the inner circumferential surface of the inner peripheral surface so as to be screwable with the male screw threaded through the screw hole.

The plasma processing apparatus according to the eighth aspect is the plasma processing apparatus according to the seventh aspect, wherein the plurality of through-holes for use are formed on the first concentric circle at equal intervals, And the number of the plurality of threading through-holes and the plurality of the clogging holes is a multiple of the number of the other.

The plasma processing apparatus according to the ninth aspect is the plasma processing apparatus according to the eighth aspect, wherein the number of the plurality of threading through holes and the number of the plurality of plugging holes are 4, 6, 8, 12 and 24 ≪ / RTI >

The plasma processing apparatus according to the 10th aspect is the plasma processing apparatus according to the 7th aspect, wherein the number of the plurality of through-holes is larger than the number of the plurality of the through-holes.

According to the invention related to the first aspect, the antenna holding section is configured to be capable of changing the direction of a line segment connecting both ends of the corresponding inductively-coupled antenna to be in the inductively coupled type The antenna is held at both ends thereof. However, the plasma ion density of the process gas that has been plasmaized by the inductively coupled antenna having a number of turns of less than one turns in a direction orthogonal to the line segment connecting both ends of the inductively coupled antenna within a plane perpendicular to the projecting direction of the inductively coupled antenna Is higher than the density in the line segment direction. Therefore, by changing the direction of the inductively coupled antenna by the antenna holding unit, the uniformity of the plasma ion density can be improved.

According to the invention related to the second aspect, since the directions of the line segments connecting the both ends of each of the plurality of inductively coupled antennas can be independently changed, uniformity of the plasma ion density can be increased over a wide range.

According to the invention related to the third aspect, since the plurality of inductively coupled antennas are arranged in a line along a virtual axis extending along one wall portion of the chamber, the uniformity of the plasma ion density can be increased over a wide range.

According to the invention related to the fourth aspect, a pair of plate-shaped shield members are installed upright from one wall of the chamber so as to face each other with a plurality of inductively coupled antennas arranged in a row therebetween. Therefore, by lowering the plasma ion density due to the inductively coupled antenna at both ends by the shield member, it is possible to suppress the decrease of the plasma ion density.

According to the invention related to the fifth aspect, at least one of the pair of shield members is provided with at least one of a position in the virtual axis direction defining the arrangement direction of the plurality of inductively coupled antennas and a height from one wall portion of the chamber to It is installed to be changeable. The plasma ion density can be increased by approaching the shield member to the inductively coupled antenna. Also, by increasing the height of the shield member, the plasma ion density can be increased. Therefore, by further finely adjusting the plasma ion density due to the inductively coupled antenna at both ends, the lowering of the plasma ion density can be further suppressed.

According to the invention related to the sixth aspect, an antenna through hole is formed in one wall portion of the chamber so as to have a shape corresponding to the antenna holding portion (corresponding holding portion) which is a plate-like member and closed by the antenna holding portion. In the periphery of the antenna holding portion and the periphery of the through hole for the antenna among the wall portions, the antenna holding portion is formed so as to block the antenna through hole at a plurality of rotation angles of the corresponding holding portion along the circumferential direction of the through hole for antenna, First and second attachment structures for detachably attaching the peripheral portion of the antenna to the peripheral portion of the through hole for the antenna are provided, respectively. Therefore, by changing the rotation angle of the corresponding holding portion, it is possible to easily change the direction of the corresponding antenna held in the corresponding holding portion (the direction of the line connecting both ends).

According to the invention related to the seventh aspect, the peripheral portion of the antenna holding portion and the peripheral portion of the antenna-use through hole are firmly fixed by screwing the male thread penetrating through the through hole for use with the female screw formed on the inner peripheral surface of the plugging hole, .

According to the invention related to the eighth aspect, the number of one of the plurality of threading through-holes and the plurality of the clogging holes is a multiple of the other number. Therefore, the number of rotation angles of a part of one of the plurality of threading through-holes and the plurality of clogging holes and the corresponding holding part capable of aligning the other whole can be set to be the same as the number of the through- Can be made larger than the number of smaller ones. Thus, even if the number of the through-holes and the clogging holes is reduced, the inductively coupled antenna (the line connecting both ends of the inductively-coupled antenna) can be set in many directions.

According to the invention related to the ninth aspect, the number of the plurality of threading through holes and the number of the plurality of plugging holes are arbitrary numbers selected from 4, 6, 8, 12 and 24, respectively. It is possible to more firmly fix the antenna holding portion to the peripheral portion of the through hole for the antenna by using a large number of male screws so that the airtightness in the chamber can be further enhanced and the use through hole and the clogging The manufacturing cost of the hole increases. Thus, by determining the number of the through-holes and the clogging holes in this way, it is possible to improve both the sealing performance in the chamber and the cost reduction.

According to the invention relating to the tenth aspect, since the number of through-holes for use is lower than the number of the blind holes, the manufacturing cost of the apparatus can be reduced.

1 is a YZ side view schematically showing a schematic configuration of a plasma processing apparatus according to an embodiment.
2 is a sectional view taken along the line A-A in Fig.
3 is a view for explaining an example of the arrangement of the inductively coupled antenna.
Fig. 4 is a top view schematically showing the schematic configuration of the antenna holding portion of Fig. 2;
5 is a cross-sectional view taken along the line B-B in Fig.
6 is a cross-sectional view taken along line C-C of Fig.
7 is a perspective view schematically showing a schematic configuration of a base plate having a plurality of antenna holding portions.
Fig. 8 is a diagram showing a measurement example of a plasma ion density distribution generated by one LIA in a contour diagram. Fig.
Fig. 9 is a graph showing an example of measurement of variation in the plasma ion density distribution with respect to pressure. Fig.
10 is a graph showing an example of measurement of a plasma ion density distribution generated by two LIAs.
FIG. 11 is a diagram schematically showing a plasma ion density distribution generated by one LIA in which a shield plate is not provided around, in a contour diagram. FIG.
12 is a YZ side view schematically showing another configuration example of the plasma processing apparatus according to the embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant description is omitted in the following description. Also, each drawing is schematically shown. In some drawings, XYZ orthogonal coordinate axes with the Z axis as the axis in the vertical direction and the XY plane as the horizontal plane are suitably provided for the purpose of clarifying the directional relationship. In the description of the embodiment, the vertical direction is the vertical direction, the side of the inductively coupled antenna 41 is above, and the side of the substrate 9 is below.

≪ Embodiment >

<1. Overall Configuration of Plasma Processing Apparatus 100>

Fig. 1 is a YZ side view schematically showing a schematic configuration of a plasma processing apparatus 100 according to an embodiment. 2 is a cross-sectional view taken along line A-A of the plasma processing apparatus 100 of FIG. 1 and is an XZ side view schematically showing a schematic configuration of the plasma processing apparatus 100. FIG. 3 is a view for explaining an example of the arrangement of the inductively coupled antenna 41 of the plasma processing apparatus 100. As shown in Fig.

The plasma processing apparatus 100 includes a substrate 9 (for example, a semiconductor substrate for a solar cell, also referred to as a &quot; substrate &quot;) that is an object of film formation by plasma enhanced chemical vapor deposition And is a device for forming a CVD film (for example, a protective film).

The plasma processing apparatus 100 includes a processing chamber 1 for forming a processing space V1 therein and a processing chamber 2 for holding a substrate 9 (specifically, a substrate 9 disposed on the carrier 90) (3) for heating the substrate (9) to be transferred, and a holding section (3) for holding the plasma in the processing space (V1) And a structure part 5 for defining a processing space V1.

The plasma processing apparatus 100 further includes a gas supply unit 61 for supplying a gas to the process space V1 and an exhaust unit 7 for exhausting gas from the process chamber 1. The plasma processing apparatus 100 also includes a control unit 8 for controlling the above-mentioned components.

&Lt; Process chamber (1) &gt;

A processing chamber (also referred to as a "vacuum chamber" or simply a "chamber") 1 is a hollow member having a processing space V1 therein. Here, the processing space V1 is a space in which the plasma CVD processing is performed by the inductively coupled antenna 41 described later. In this embodiment, the processing space V1 is formed by the structure unit 5. [

The top plate 11 of the processing chamber 1 is disposed such that the bottom surface 111 thereof is in a horizontal posture and the inductively coupled antenna 41 and the structural portion 5 (All of which will be described later) protrude. A heating unit 3 is disposed in the vicinity of the bottom plate of the processing chamber 1. [ On the upper side of the heating section 3, a conveying path (a path along the Y direction) of the substrate 9 by the holding and conveying section 2 is defined. Further, on the side wall of the processing chamber 1 on the + Y side, there is provided a semi-entry / exit port (not shown) which is opened and closed by a gate valve, for example.

The top plate 11 is provided with an inductively coupled antenna 41 (not shown) so as to protrude toward the processing space V1 side a portion of the front end 44 side of the inductively coupled antenna 41 held by the antenna holding portion 80 (Four in the drawing) for the antenna are formed in a line in a spaced-apart relation along the direction perpendicular to the conveying direction of the substrate 9. The through holes 12 are formed in a line. The size of the through hole 12 for the antenna is smaller than the size of the antenna holding portion 80. Thus, the antenna holding portion 80 is formed in a state in which the tip 44 side portion of the inductively coupled antenna 41 having both end portions 42, 43 protrudes into the processing chamber 1, (12).

<Holding and conveying section (2)>

The holding and conveying section 2 holds the carrier 90 in a horizontal posture and conveys it along the conveying path through the entrance and exit port formed in the processing chamber 1. [ On the upper surface of the carrier 90, a plurality of substrates 9 (three substrates 9 in total in this embodiment, along the Y direction) as film forming objects are arranged. A processing space V1 in which a plasma CVD process is performed is formed at a position facing the plurality of substrates 9 on which the transport path is transported above the transport path.

More specifically, the holding and conveying section 2 includes a pair of conveying rollers 21 disposed opposite to each other with a conveying path therebetween, and a driving section (not shown) for rotationally driving the conveying rollers 21 in synchronism with each other. The pair of conveying rollers 21 are provided, for example, in a plurality of pairs along the extending direction of the conveying path (the Y direction). In this configuration, each of the conveying rollers 21 rotates while contacting the lower surface of the carrier 90, so that the carrier 90 is conveyed along the conveying path. As a result, the substrate 9 held by the carrier 90 is moved relative to the processing space V1 having the inductively coupled antenna 41. [

The holding and conveying section 2 opposes the substrate 9 to the processing space V1 at a portion opposed to the processing space V1 in the conveying path of the substrate 9. [ The holding and conveying section 2 holds the position of the substrate 9 in the opposing direction with respect to the structure section 5 when the substrate 9 faces the processing space V1. For example, a fixing mechanism which is fixed to a portion of the lower surface 111 of the top plate 11 opposed to the processing space V1 so as to detachably mount the substrate 9, instead of the holding and conveying section 2, A stage mechanism may be employed. As the substrate 9, a film-like substrate extending in the carrying direction of the holding and conveying section 2 may be employed. In this case, the holding and conveying section 2 does not have the carrier 90, and each of the conveying rollers 21 directly contacts both ends of the back surface (the main surface opposite to the main surface to be formed) of the substrate, It may be returned.

&Lt; Heating part (3) &gt;

The heating section 3 is a member for heating the substrate 9 held and conveyed by the holding and conveying section 2 and is provided below the holding and conveying section 2 (that is, below the conveying path of the substrate 9) . The heating section 3 can be constituted by, for example, a ceramic heater. Further, the plasma processing apparatus 100 may further include a mechanism for cooling the substrate 9 and the like held in the holding and conveying section 2 after the CVD processing.

&Lt; Plasma Generating Section (4)

The plasma generating section 4 generates plasma in the processing space V1. The plasma generating section 4 includes a plurality of (in this embodiment, four) inductively coupled antennas 41 which are inductively coupled type high-frequency antennas. Specifically, the inductively coupled antenna 41 is formed by bending a metallic pipe-shaped conductor into a U-shape and covering it with a dielectric such as quartz. The plasma generating portion 4 is an exciting portion for exciting the source gas in the processing space V1 and converting it into a plasma.

3, the plurality of inductively coupled antennas 41 are connected to the virtual axis K so that the center points (middle points) C of the both end portions 42 and 43 thereof are arranged on the predetermined virtual axis K K (preferably equally spaced) along the longitudinal direction. A part of the inductively coupled antenna 41 on the side of the holding and conveying section 2 side (the portion including the front end 44 which is the bottom portion of the U shape) is supported from the top plate 11 to the side of the holding and conveying section 2, And is projected into the chamber 1. The plurality of inductively coupled antennas 41 are arranged in a direction intersecting with the conveying direction (Y direction) of the substrate 9 (particularly preferably in the conveying direction of the substrate 9 (X direction) orthogonal to the X-axis direction).

In the illustrated example, four inductively coupled type antennas 41 are provided along the direction orthogonal to the conveying direction of the substrate 9, but the number of the inductively coupled type antennas 41 is not necessarily four, It is possible to appropriately select the number in accordance with the dimensions of the processing chamber 1 or the like. The inductively coupled antenna 41 may be arranged in a matrix or zigzag shape. In addition, one inductively coupled antenna 41 may be provided depending on the size of the processing chamber 1 and the like. That is, the plasma processing apparatus 100 includes at least one inductively coupled antenna.

One end of each inductively coupled antenna 41 is connected to a high frequency power source 440 through a matching box 430. The other end of each inductively coupled antenna 41 is grounded. In this configuration, when a high-frequency current (specifically, a high-frequency current of, for example, 13.56 MHz) flows from the high-frequency power supply 440 to each of the inductively-coupled antennas 41, (Induction coupled plasma (ICP)) is generated.

As described above, the inductively coupled antenna 41 is U-shaped. The U-shaped inductively coupled antenna 41 corresponds to an inductively coupled antenna having a number of turns of less than once and has a lower inductance than an inductively coupled antenna having a number of turns of one or more times. The high frequency voltage is reduced and the high frequency fluctuation of the plasma potential due to the electrostatic coupling to the generated plasma is suppressed. Therefore, excessive electron loss due to fluctuation of the plasma potential on the earth potential is reduced, and the plasma potential is particularly suppressed to be low. Such an inductively coupled type high frequency antenna is disclosed in Japanese Patent No. 3836636, Japanese Patent No. 3836866, Japanese Patent No. 4451392, and Japanese Patent No. 4852140.

<Antenna Holding Unit 80>

A plurality of (four shown) antenna through holes 12 formed in the top plate 11 are respectively connected to a plurality of (four shown) antenna holding portions 12 for holding both ends 42 and 43 of the inductively coupled antenna 41, (80), and the hermeticity in the processing chamber (1) is maintained.

The antenna holding portion 80 is a disc-shaped member. The antenna holding section 80 is provided on the top plate 11 so that the inductively coupled antenna 41 projects from the top plate 11 of the processing chamber 1 to the processing space V1, Lt; / RTI &gt; The plurality of antenna holding units 80 are connected to a plurality of inductively coupled antennas 41 so that a plurality of inductively coupled antennas 41 are arranged in a line along a predetermined imaginary axis K extending along the top plate 11. [ 41). When the processing chamber 1 is provided with one inductively coupled antenna 41, one antenna through hole 12 and one antenna holding portion 80 are also provided.

The antenna holding section 80 is configured to align the direction of the line segment L connecting the opposite ends 42 and 43 of the corresponding inductively coupled antenna 41 of the plurality of inductively coupled antennas 41 with each other, (42, 43) so that the inductively coupled antenna (41) can be changed within a plane intersecting with the projecting direction of the antenna (41), more preferably within a plane perpendicular to the projecting direction. More specifically, the plurality of antenna holding portions 80 hold a plurality of inductively coupled antennas so that the directions of the line segments L can be independently changed.

The distribution of the plasma ion density generated by the inductively coupled antenna 41 can be changed by changing the direction of the inductively coupled antenna 41 by the antenna holding unit 80. [ Thus, the uniformity of the plasma ion density in the processing space V1 can be enhanced. The attachment structure for attaching the antenna holding portion 80 to the peripheral portion of the corresponding antenna through hole 12 in the top plate 11 will be described later.

<Structure (5)>

The structure section 5 is fixed to the top plate 11 so as to face the transport path of the substrate 9. [ The structure section 5 is constituted by a pair of side shields 51 opposed to each other and a pair of shielding members 55 opposed to each other. The pair of side shields 51 and the pair of shield members 55 are grounded.

Each of the pair of side shields 51 is a plate-shaped member extending in a direction (X direction) transverse to the conveying path of the substrate 9, and both ends in each X- And extends to the vicinity of the both end wall portions in the X-axis direction. The normal direction of the main surface of the pair of side shields 51 is the transport direction (Y direction) of the substrate 9 and the pair of side shields 51 are plate-shaped bodies perpendicular to the transport path. A flange portion is formed at the tip of each of the pair of side shields 51. The normal direction of the main surface of each flange portion is the Z direction, and each flange portion is a plate-shaped body parallel to the XY plane.

The height of the tip of each of the pair of side shields 51 is set to be higher than the tip (bottom of the U-shaped portion) 44 of the inductively coupled antenna 41 and substantially the same height as each other. The pair of side shields 51 are made of, for example, aluminum.

The pair of shielding members 55 are plate-shaped members that are installed upright from the top plate 11 of the processing chamber 1 so as to face each other with a plurality of inductively coupled antennas 41 arranged in a row therebetween.

Each of the pair of shield members 55 includes a flat plate-like pedestal 56 movably attached along the lower surface 111 of the top plate 11 in the X direction and a base plate 56 at the end edge of the pedestal 56 And is composed of a flat plate-like fixing plate 57 fixed upwards from the end edge and a movable plate 58 of a flat plate shape movable along the vertical direction with respect to the fixing plate 57. The pedestal 56 is attached to the top plate 11 so as to be movable along the lower surface 111 of the top plate 11 in the direction of arrangement of a plurality of inductively coupled antennas 41, .

The top plate 11 is provided with a plurality of blind holes arranged along the arrangement direction of the plurality of inductively coupled antennas 41, that is, the direction of the imaginary axis K. On the inner circumferential surface of each of the clogging holes, a female screw is screwed with the male screw. The pedestal 56 is provided with a through hole through which the male screw is passed. Thereby, the pedestal 56 is fixed to the top plate 11 at a plurality of positions along the array direction of the plurality of inductively coupled antennas 41. [

In addition, the fixing plate 57 is provided with two elongated holes extending through the fixing plate 57 and extending in the vertical direction. Further, the movable plate 58 is provided with two through-hole holes formed by spacing the two long holes from each other. On the inner circumferential surface of each through screw hole, a female screw threadably engageable with the male screw thread passing through the slot of the stationary plate 57 is formed. By using the male screw, the movable plate 58 is fixed to the fixed plate 57 so that the position along the vertical direction can be changed.

The plasma ion density in the three-dimensional space in which the inductively coupled antenna 41 protrudes is the highest at the center point of the line segment connecting both ends of the arcuate portion of the U-shaped inductively coupled antenna 41. The plasma ion density is attenuated as it moves away from the center point in each direction in the three-dimensional space. Attenuation of the plasma ion density is suppressed when the shield member 55 is inserted into the plasma ion density distribution diffused around the inductively coupled antenna 41. [ More specifically, when the shielding member 55 is inserted, the plasma ion density drops more slowly than in the case where the shielding member 55 is not inserted, and the plasma density drops sharply in the vicinity of the shielding member 55. At the wall surface of the shield member 55, the plasma is lost. The direction of the decrease in the plasma ion density due to the insertion of the shielding member 55 becomes the up and down direction of the ground in the case of Fig. 8 to be described later.

Therefore, by increasing the height of the shielding member 55 from the lower surface 111, the plasma ion density in the space near the substrate 9 can be increased. The shield member 55 may be made to approach the antenna of the ends of the plurality of inductively coupled antennas 41 along the arrangement direction of the plurality of inductively coupled antennas 41, Ion density can be increased. It is preferable to change the position of the shield member 55 along the arrangement direction of the plurality of inductively coupled antennas 41 as compared with the case where the height of the shield member 55 from the top plate 11 is changed. Can be increased. Thus, by changing at least one of the position and the height of the shielding member 55, the distribution of the plasma ion density can be adjusted. It is not necessary to change the distribution of the plasma ion density attributed to the inductively coupled antenna 41 near one of the pair of shield members 55. In place of the one shield member 55, A shielding member having a configuration in which the position can not be changed may be attached to the top plate 11. [ Even if the pair of shield members 55 are not provided, the plasma ion density distribution by the inductively coupled antenna 41 at both ends is different from the plasma ion density distribution by the other inductively coupled antenna 41 in the allowable range The pair of shield members 55 need not be provided.

Thus, the pair of side shields 51, the pair of shield members 55, and the bottom surface 111 of the top plate 11 form a wall surface surrounding the processing space V1.

<Gas Supply Unit 61>

Each of the pair of gas supply units 61 includes a source gas supply source 611, a plurality of nozzles 615 for supplying the source gas to the process space V1, a supply source 611, A pipe 612 connecting the plurality of nozzles 615 and a valve 613 installed in the middle of the path of the pipe 612. A plurality of nozzles 615 are provided corresponding to the plurality of inductively coupled antennas 41, respectively.

The gas supply unit 61 supplies the raw material gas to the processing space V1. Specifically, for example, silane (SiH 4 ) gas or the like is supplied from each nozzle 615 as a raw material gas. An inert gas carrying the raw material gas may be supplied from the gas supply unit 61 as a carrier gas together with the raw material gas.

The valve 613 is preferably a valve capable of automatically regulating the flow rate of the gas flowing through the pipe 612. Specifically, the valve 613 is preferably configured to include, for example, a mass flow controller.

&Lt; Exhaust part 7 &gt;

The exhaust unit 7 is a high vacuum exhaust system and specifically includes, for example, a vacuum pump 71, an exhaust pipe 72, and an exhaust valve 73. One end of the exhaust pipe 72 is connected to the vacuum pump 71 and the other end is connected to the processing space V1. The exhaust valve 73 is installed in the middle of the path of the exhaust pipe 72. Specifically, the exhaust valve 73 includes, for example, an APC (automatic pressure controller) or the like, and is a valve capable of automatically regulating the flow rate of gas flowing through the exhaust pipe 72. In this configuration, when the exhaust valve 73 is opened while the vacuum pump 71 is operated, the processing space V1 is evacuated.

&Lt; Control unit (8) &gt;

The control unit 8 is electrically connected to the respective constituent elements of the plasma processing apparatus 100 (schematically shown in Fig. 1), and controls these elements. Specifically, for example, the control unit 8 includes a CPU for performing various arithmetic processing, a ROM for storing programs and the like, a RAM serving as a work area for arithmetic processing, a hard disk for storing programs and various data files, And a data communication unit having a data communication function through a bus line, etc. are connected to each other by a general computer. The control unit 8 is also connected to an input unit such as a display, a keyboard, and a mouse for performing various displays. In the plasma processing apparatus 100, a predetermined process is performed on the substrate 9 under the control of the control section 8. [

&Lt; Attachment structure of antenna holding portion 80 to top plate 11 &gt;

Fig. 4 is a top view schematically showing the schematic configuration of the antenna holding portion 80 and its peripheral portion of the plasma processing apparatus 100. As shown in Fig. 5 is a B-B cross-sectional view of the antenna holding portion 80 of FIG. 6 is a cross-sectional view taken along line C-C of the antenna holding portion 80 of FIG.

Each of the antenna holding portions 80 is a plate-shaped member having, for example, a disc shape or the like capable of holding the corresponding inductively coupled antenna 41. The top plate 11 of the processing chamber 1 is provided with a plurality of (four shown) through holes for insertion of the respective inductively coupled type antennas 41 held by the respective antenna holding portions 80, (12) are formed. Each antenna through hole 12 has a shape corresponding to the antenna holding portion 80 so as to be able to be closed by a corresponding antenna holding portion 80. More specifically, the through hole 12 for the antenna is smaller than the antenna holding portion 80. If the antenna holding portion 80 is circular (circular plate shape), the antenna through hole 12 is also preferably circular. The periphery of the antenna holding portion 80 and the peripheral portion of the antenna through hole 12 in the top plate 11 can be fixed to each other with the antenna holding portion 80 completely covering the antenna through hole 12 The shape of the antenna holding portion 80 and the antenna through hole 12 may not be the same. Specifically, the shape of one of the antenna holding portion 80 and the antenna through hole 12 may be, for example, a regular octagon, and the other shape may be, for example, a circle.

The peripheral edge of the antenna holding portion 80 and the periphery of the through hole 12 for the antenna among the top plate 11 are arranged at a plurality of rotational angles of the antenna holding portion 80 along the circumferential direction of the through- (830, 130) for detachably attaching the periphery of the antenna holding portion (80) to the peripheral portion of the antenna through hole (12) so that the antenna holding portion (80) Respectively. The antenna holding portion 80 holding the inductively coupled antenna 41 projects the inductively coupled antenna 41 into the processing chamber 1 and closes the antenna through hole 12, And the periphery of the through hole 12 for the antenna are attached to each other.

Concretely, the attachment structure 830 provided on the periphery of the antenna holding portion 80 is a line segment connecting the both ends 42, 43 of the inductively coupled antenna 41 held by the antenna holding portion 80 Through holes 83 formed on the concentric circle U1 defined on the periphery of the center C of the center axis C of the center axis C of the center axis C of the center axis C of the center axis C of the center axis C of the center axis. Each of the through-holes 83 is formed to have a size allowing insertion of the male screw 99 therethrough. The top surface 112 of the peripheral portion of the through hole 12 for an antenna among the top plate 11 is provided with a through hole 12 around the antenna for through hole 12, A groove portion 14 is formed. An O-ring 15 made of rubber is sandwiched in the groove 14. Thus, the airtightness of the processing space V1 by the antenna holding portion 80 can be enhanced.

The attachment structure 130 provided on the peripheral portion of the antenna through hole 12 is formed on the concentric circle U2 defined on the surface of the peripheral portion facing the antenna holding portion 80 with the same diameter as the concentric circle U1 , And a plurality of (six in the illustrated example, six formed at every 60 degrees of rotation) blocking openings 13 on the opposed surface. The inner peripheral surface of each clogging hole 13 is formed with a female screw threadably engageable with the male screw 99 penetrating through the through hole 83 for use.

In this case, the rotation angle of the antenna holding portion 80 can be changed every 30 degrees. That is, twelve directions of the inductively coupled antenna 41 held by the antenna holding section 80 can be set. The peripheral portion of the antenna holding portion 80 and the through hole 12 for the antenna are fixed by six male screws 99. Further, even if a female screw for screwing the male screw 99 is formed on the inner circumferential surface of each of the through holes 83, the usability of the present invention is not impaired.

A plurality of through-holes 83 are formed on the concentric circle U1 at regular intervals. The plurality of clogging holes 13 are formed on the concentric circle U2 at regular intervals. As described above, in the illustrated example, the number of the through-holes 83 is 12, and the number of the clogging holes 13 is 6. That is, the number of the through-holes 83 to be used is a multiple of the number of the clogging holes 13. Conversely, the number of the clogging holes 13 may be a multiple of the number of the through holes 83 used. The number of the through holes 83 for use and the number of the through holes 12 for the antenna may be the same.

The numbers of the through holes 83 and the number of the blind holes 13 are preferably selected from 4, 6, 8, 12 and 24, respectively. This makes it possible to improve the hermeticity in the processing chamber 1 and to reduce the cost for forming the through-hole 83 and the clogging hole 13.

The number of the through-holes 83 to be used is preferably set to be larger than the number of the clogging holes 13 because the manufacturing-use through holes 83 have a lower manufacturing cost than the clogging holes 13. [

7 is a perspective view schematically showing a schematic configuration of a pedestal 120 having a plurality of antenna holding portions 80. As shown in Fig. When the processing chamber 1 is enlarged in size, the weight of the processing chamber 1 reaches, for example, several tons. As shown in Fig. 7, the number of antenna through holes It is preferable to use a pedestal 120 formed with a plurality of protrusions 12 formed thereon. The pedestal 120 constitutes a part of the top plate 11. Thereby, after the plurality of antenna holding portions 80 are separated from the processing chamber 1 for each pedestal 120 and the orientation of each inductively coupled antenna 41 is adjusted, the pedestal 120 is moved to the processing chamber 1 , The angle changing operation of the antenna holding portion 80 becomes easier. Attachment of the pedestal 120 and other portions of the top plate 11 is performed by the same attachment structure as that of the antenna holding portion 80 and the attachment structures 830 and 130 for fixing the periphery of the through hole 12 for the antenna Is done.

Fig. 8 is a diagram showing a measurement example of a plasma ion density distribution generated by one inductively coupled antenna 41 by a contour diagram. Fig. 9 is a graph showing an example of measurement of variation in the plasma ion density distribution with respect to pressure. Fig. 10 is a graph showing an example of measurement of a plasma ion density distribution generated by two inductively coupled antennas 41. As shown in Fig. Fig. 11 is a diagram schematically showing a plasma ion density distribution generated by one inductively-coupled antenna 41 without a shield plate disposed therearound in a contour diagram.

8 is a graph showing the relationship between the plasma ion density at each lattice point set on the horizontal plane in the processing space V1 using the Langmuir probe method, And the measurement results are shown. Plasma ion density, the ion saturation is obtained by the measurement of the current density (μA / cm 2). The ion saturation current density is a value corresponding to the plasma ion density. The distribution of the plasma ion density has a Gaussian distribution in each of the X direction and the Y direction. In the example of Fig. 8, the distribution of the plasma ion density in the measurement region is shown by contour lines. Specifically, the distribution of the plasma ion density (μA / cm 2 ) is 0-0.12, 0.12-0.18, 0.18-0.24, 0.24-0.3, 0.3-0.36, 0.36-0.42, 0.42-0.48, 0.48-0.54, 0.54 -0.6, and the concentration is gradually increased in this order.

8, the region enclosed by the curve connecting the points having the same plasma ion density is located in the X direction (direction perpendicular to the line connecting the both ends of the inductively coupled antenna 41) Direction of a line connecting both ends of the combined antenna 41). In other words, it can be seen that the attenuation of the plasma ion density is gentler than that in the direction away from the center of the region along the X direction. This difference is caused by the fact that the diffusion of the plasma in the Y direction is suppressed by the pair of side shields 51 facing each other along the Y direction. In this measurement example, a pair of shield members 55 opposed to each other along the X direction are not provided.

On the other hand, when neither the X-direction nor the Y-direction is provided with the pair of shield members 55 and the pair of side shields 51, as shown in FIG. 11, the plasma ion density The region surrounded by the curve connecting each point has a longer maximum length (WY) in the Y direction than the maximum length (WX) in the X direction. That is, the region is diffused in the Y direction rather than in the X direction, contrary to FIG.

When the plasma ion density distribution generated by the inductively coupled antenna 41 is not influenced by the peripheral wall surface of the inductively coupled antenna 41, the both ends 42, 43 of the inductively coupled antenna 41 (X direction) of the line segment L from the center point C is defined as a plane perpendicular to the projecting direction of the inductively coupled antenna 41 including the center point C of the line segment L connecting the line segment L The plasma ion density attenuates most abruptly as it follows. On the contrary, in the case of moving away from the center point C along the direction (Y direction) orthogonal to the extending direction of the line segment L, the plasma ion density attenuates most smoothly.

Therefore, the uniformity of the plasma ion density can be improved by adjusting the direction of the inductively coupled antenna 41 by, for example, cut-and-triole based on the distribution of the plasma ion density measured in advance.

9 shows the result of measuring the fluctuation of the half-width of the plasma density distribution with respect to the pressure by changing the pressure in the chamber while setting the process conditions other than the pressure in the chamber to the same as in Fig. Even when the pressure is changed, it can be seen that, similarly to Fig. 8, the region having the plasma ion density of the same intensity is diffused in the X direction from the Y direction.

Fig. 10 shows a measurement result of the plasma ion density distribution when two inductively coupled antennas 41 are turned on (supplying high-frequency electric power). Each of the inductively-coupled antennas 41 is supplied with power by itself, and the result of measurement by itself is plotted by white circles and black circles. The graph plotted with white rhombus is simply the sum of the measurement results of each inductively coupled antenna 41 alone. The graph plotted with black rhombus shows the density actually measured by performing power supply to two inductively coupled antennas 41 at the same time.

Thus, when a plurality of inductively coupled antennas 41 are used, the reaction process in the chamber is affected by the pressure in the chamber, the flow rate and composition of the process gas, the distance between each antenna and the wall surface in the chamber, The distribution of the plasma ion density does not become a simple added value of the density of the inductively coupled antenna 41 alone, and the uniformity of the plasma ion density may be impaired.

However, in the plasma processing apparatus 100, the direction of the inductively coupled antenna 41 can be changed by using the antenna holding unit 80, so that the uniformity of the plasma ion density can be increased while suppressing the cost.

12 is a YZ side view schematically showing a schematic configuration of the plasma processing apparatus 100A as another example of the configuration of the plasma processing apparatus according to the embodiment. The difference between the plasma processing apparatus 100A and the plasma processing apparatus 100 is that the plasma processing apparatus 100 is provided with the antenna holding section 80 for each of the four inductively coupled antennas 41, The plasma processing apparatus 100A is provided with the antenna holding section 80 only for the two inductively coupled antennas 41 at both ends. For example, when the plurality of inductively coupled antennas 41 are arranged in a row, the uniformity of the total plasma ion density is deteriorated due to the plasma ion density due to the inductively coupled antenna 41 at both ends The antenna holding portion 80 may be provided only for the inductively coupled antenna 41 which causes the uniformity to be damaged as shown in Fig. In this case, two inductively coupled antennas 41 at both ends where the corresponding antenna holding portions 80 are provided correspond to &quot; at least one inductively coupled antenna &quot; in the present invention.

<2. Operation of Plasma Processing Apparatus>

Next, the flow of processing executed in the plasma processing apparatus 100 will be described. The processing described below is executed under the control of the control unit 8. [

The carrier holding portion 2 holds the carrier 90 when the carrier 90 on which the substrate 9 is placed is brought into the processing chamber 1 through the entrance and exit of the processing chamber 1. Further, the exhaust part 7 evacuates the gas in the processing chamber 1 to bring the processing chamber 1 into a vacuum state. At the predetermined timing, the holding and conveying section 2 starts to convey the carrier 90 (conveying step), and the heating section 3 starts heating the substrate 9 placed on the carrier 90.

When the interior of the processing chamber 1 is evacuated, the gas supply unit 61 starts supply of the raw material gas from the nozzle 615 to the processing space V1.

At the same time as the gas supply is started, a high-frequency current (specifically, a high-frequency current of, for example, 13.56 MHz) flows from the high-frequency power supply 440 to each of the inductively coupled type antennas 41. Then, electrons are accelerated by the high-frequency induction magnetic field around the inductively-coupled antenna 41, and inductively coupled plasma is generated. When the plasma is generated, the raw material gas in the processing space V1 is converted into plasma, and active species such as radicals and ions of the raw material gas are generated, and chemical vapor deposition is performed on the substrate 9 to be transported. The substrate 9 on which the CVD film is formed on the main surface in this way can be used for various electronic devices such as solar cells as a structure for an electronic device.

During the film forming process of the plasma processing apparatus 100, the carrying process of the substrate 9 and the plasma generating process are performed in parallel. The supply of the raw material gas is performed in parallel with the transport processing of the substrate 9 and the plasma generation processing.

In the above embodiment, the plasma processing apparatus according to the present invention is applied to a plasma CVD apparatus. However, the plasma processing apparatus according to the present invention can be applied to various apparatuses that perform plasma processing. For example, the present invention may be applied to a sputtering apparatus for forming a thin film on a target by sputtering a target with ions in a plasma atmosphere. Further, the present invention may be applied to a plasma etching apparatus for etching an object by causing an etching gas to be plasmaized and acting on an object.

According to the plasma processing apparatus according to the present embodiment configured as described above, the antenna holding section 80 is configured so that the direction of the line segment L connecting the opposite ends 42 and 43 of the corresponding inductively coupled antenna 41, The inductively coupled antenna 41 is held at its both ends 42 and 43 so that it can be changed in a plane intersecting with the projecting direction of the inductively coupled antenna 41. [ The plasma ion density of the process gas that has been plasmaized by the inductively coupled antenna 41 having less than one turn includes the line segment L connecting the opposite ends 42 and 43 of the inductively coupled antenna 41 The density in the direction orthogonal to the line segment L is higher than the density in the line segment L direction. Therefore, by changing the direction of the inductively coupled antenna 41 by the antenna holding section 80, the uniformity of the plasma ion density can be improved.

According to the plasma processing apparatus according to the present embodiment configured as described above, since the direction of the line segment L connecting the opposite ends 42 and 43 of each of the plurality of inductively coupled antennas 41 can be independently changed, The uniformity of the plasma ion density can be increased.

In the plasma processing apparatus according to the present embodiment configured as described above, a plurality of inductively coupled antennas 41 are arrayed along a virtual axis K extending along the top plate 11 of the process chamber 1 The uniformity of the plasma ion density can be increased over a wide range.

In the plasma processing apparatus according to the present embodiment configured as described above, a pair of plate-like shield members 55 are arranged in parallel with each other so as to face each other with a plurality of inductively coupled antennas 41 arranged in a row therebetween. (11) of the main body (1). Therefore, by lowering the plasma ion density due to the inductively coupled antenna 41 at both ends by the shield member 55, it is possible to suppress the decrease of the plasma ion density.

According to the plasma processing apparatus of the present embodiment configured as described above, at least one of the pair of shield members 55 is arranged in the direction of the imaginary axis K defining the arrangement direction of the plurality of inductively coupled antennas 41 And the height from the top plate 11 of the processing chamber 1 can be changed. The plasma ion density can be increased by approaching the shield member 55 to the inductively coupled antenna 41. [ Also, by increasing the height of the shielding member 55, the plasma ion density can be increased. Therefore, by further finely adjusting the plasma ion density due to the inductively coupled antenna 41 at both ends, the lowering of the plasma ion density can be further suppressed.

The plasma processing apparatus according to the present embodiment configured as described above has a shape corresponding to the antenna holding portion 80 that is a plate member and is configured to be closed by the antenna holding portion 80, (11) is formed with an antenna through hole (12). A plurality of antenna holding portions 80 along the circumferential direction of the antenna through hole 12 are formed in the periphery of the antenna holding portion 80 and the periphery of the antenna through hole 12 in the top plate 11 An attachment structure for detachably attaching the periphery of the antenna holding portion 80 to the periphery of the antenna through hole 12 so that the antenna holding portion 80 covers the antenna through hole 12 at the rotation angle 830, and 130, respectively. The orientation of the inductively coupled antenna 41 held by the antenna holding portion 80 (the direction of the line segment L connecting the both ends 42 and 43) can be changed by changing the rotation angle of the antenna holding portion 80, Can be easily changed.

In the plasma processing apparatus according to the present embodiment configured as described above, the male screw 99 passing through the through hole 83 is screwed to the female screw formed on the inner circumferential surface of the blind hole 13, The periphery of the through hole 12 and the periphery of the through hole 12 for the antenna can be firmly fixed to enhance the hermeticity of the processing chamber 1.

According to the plasma processing apparatus according to the present embodiment configured as described above, the number of the plurality of threading through-holes 83 and the number of the plurality of plugging holes 13 is a multiple of the other number. Therefore, the number of rotation angles of the antenna holding portion 80 capable of positioning a part of one of the plurality of threading through-holes 83 and the plurality of clogging holes 13 and the other whole can be used The number of the through holes 83 and the number of the clogging holes 13 can be larger than the smaller number. Even if the number of the through hole 83 and the clogging hole 13 is reduced, the inductance of the inductively coupled antenna 41 (the line connecting the both ends 42 and 43 of the inductively coupled antenna 41) (L) can be set in many directions.

Further, according to the plasma processing apparatus according to the present embodiment configured as described above, the number of the plurality of through-holes 83 and the number of the plurality of the clogging holes 13 are 4, 6, 8, 12 and 24 &Lt; / RTI &gt; It is possible to securely fix the antenna holding portion 80 to the peripheral portion of the antenna through hole 12 by using a large number of male screws 99 by increasing the number of the through holes 83 and the blind holes 13 The sealing performance in the processing chamber 1 can be further increased while the manufacturing cost of the through-hole 83 and the clogging hole 13 is increased. Therefore, if the number of the through-holes 83 and the number of the clogging holes 13 are determined as described above, it is possible to improve both the sealing performance in the processing chamber 1 and the cost reduction.

According to the plasma processing apparatus of the present embodiment configured as described above, since the number of the through-holes 83 used for manufacturing is lower than the number of the blind holes 13 in comparison with the blind hole 13, The manufacturing cost of the processing apparatus can be reduced.

<Modification Example>

While the present invention has been shown and described in detail, the foregoing description is intended to be illustrative and not restrictive in all aspects. Therefore, the present invention can appropriately modify, omit, and limit the embodiments within the scope of the invention.

100, 100A: Plasma processing device
1: Process chamber
2: holding conveying section (object holding section)
9: substrate
11: Top plate (one wall)
12: Through hole for antenna
13: plugging hole
4: Plasma generator
41: Inductively Coupled Antenna
61: gas supply section
80: antenna holding part
83: I used through hole
90: Carrier
430: matching box
440: High frequency power source
C: Center point (center point)
K: virtual axis
L: Line segment

Claims (10)

  1. A chamber,
    An object holding unit for holding an object to be processed in the chamber;
    At least one inductively coupled antenna having a number of turns of less than one,
    A high frequency power supply for supplying high frequency power to the at least one inductively coupled antenna,
    And at least one antenna holding portion for holding each of the at least one inductively coupled antenna with respect to the wall portion so that the at least one inductively coupled antenna protrudes into the chamber from one wall portion of the chamber,
    Wherein each of the at least one antenna holding portion comprises:
    Wherein a direction of a line segment connecting both ends of a corresponding inductively coupled antenna among the at least one inductively coupled antenna is changeable within a plane intersecting a projecting direction of the inductively coupled antenna, And is held at both ends thereof.
  2. The method according to claim 1,
    Wherein the at least one inductively coupled antenna is a plurality of inductively coupled antennas, the at least one antenna holding unit is a plurality of antenna holding units,
    Wherein the plurality of antenna holders comprise:
    And the plurality of inductively coupled antennas are held so that the direction of a line segment connecting both ends of each of the plurality of inductively coupled antennas can be independently changed.
  3. The method of claim 2,
    Wherein the plurality of antenna holders comprise:
    Wherein the plurality of inductively coupled antennas are arranged in a line along a predetermined imaginary axis extending along the wall portion.
  4. The method of claim 3,
    Further comprising a pair of plate-shaped shielding members provided so as to extend from the wall portion of the chamber so as to face each other with the plurality of inductively coupled antennas arranged in a row therebetween.
  5. The method of claim 4,
    At least one of the pair of shield members
    Wherein a position along the virtual axis and a height from the wall portion of the chamber are changeable.
  6. The method according to any one of claims 1 to 5,
    Wherein each of the at least one antenna holding portion is a plate-like member capable of holding a corresponding inductively coupled antenna of the at least one inductively coupled antenna,
    When a corresponding antenna and a corresponding holding portion are defined by the inductively coupled antenna and the antenna holding portion corresponding to each other among the at least one inductively coupled antenna and the at least one antenna holding portion,
    The through hole for the antenna having the shape corresponding to the corresponding holding portion is formed in the wall portion of the chamber so that the corresponding antenna held in the corresponding holding portion can be inserted and closed by the corresponding holding portion And,
    The peripheral portion of the corresponding holding portion is detachably attached to the peripheral portion of the antenna through hole so that the corresponding holding portion covers the antenna through hole at a plurality of rotation angles of the corresponding holding portion along the circumferential direction of the through hole for antenna The first and second attachment structures for attaching are provided on the periphery of the corresponding holding portion and the peripheral portion of the antenna through hole among the wall portions,
    The peripheral portion is attached to the peripheral portion by the first and second attachment structures in a state in which the corresponding holding portion holding the corresponding antenna projects the corresponding antenna into the chamber and closes the antenna through hole Gt;
  7. The method of claim 6,
    The first attachment structure provided on the peripheral portion of the corresponding holding portion,
    A plurality of threaded through holes formed on a first concentric circle defined in the peripheral portion,
    The second attachment structure provided at the peripheral portion of the through hole for the antenna,
    And a second concentric circle having a diameter equal to the diameter of the first concentric circle on a surface of the peripheral portion facing the antenna holding portion, the second concentric circle being formed on the opposed surface, And the plurality of blind holes are formed on the inner peripheral surface of the female screw.
  8. The method of claim 7,
    Wherein the plurality of bore holes are equally spaced on the first concentric circle and the plurality of blind holes are formed on the second concentric circle at equal intervals,
    Wherein the number of the plurality of threading through-holes and the number of the plurality of clogging holes is a multiple of the number of the other.
  9. The method of claim 8,
    Wherein the number of the plurality of threading through holes and the number of the plurality of clogging holes are an arbitrary number selected from 4, 6, 8, 12 and 24, respectively.
  10. The method of claim 7,
    Wherein the number of the plurality of threading through-holes is larger than the number of the plurality of clogging holes.
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KR20070045958A (en) * 2005-10-28 2007-05-02 가부시키가이샤 이엠디 Plasma producing method and apparatus as well as plasma processing apparatus
EP2615889A1 (en) * 2010-09-10 2013-07-17 EMD Corporation Plasma processing apparatus

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