CN109216148A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN109216148A CN109216148A CN201810735553.XA CN201810735553A CN109216148A CN 109216148 A CN109216148 A CN 109216148A CN 201810735553 A CN201810735553 A CN 201810735553A CN 109216148 A CN109216148 A CN 109216148A
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- electrode
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- mounting surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of to multiple substrates processed while when carrying out corona treatment, is able to suppress the plasma processing apparatus of influence of the RF power for being applied to the electrode portion for loading substrate processed for peripheral parts.Plasma processing apparatus is plasmarized using the processing gas that plasma forming portion is fed into processing space, is applied the first electrode portion of RF power, constitutes the first substrate mounting surface for loading a substrate processed.In addition, be applied the metal second electrode portion of RF power, it is arranged in and is left with above-mentioned first electrode portion and adjacent position, constitute the second substrate mounting surface for loading another substrate processed.In the position surrounded around both first substrate mounting surface, the second substrate mounting surface, it is provided with ring portion made of ceramics, the lower face side of ring portion in the position is provided with the dielectric members being made of the dielectric constant dielectric lower than above-mentioned ceramics.
Description
Technical field
The present invention relates to a kind of to supply plasmarized processing gas to substrate processed to implement corona treatment
Technology.
Background technique
In the manufacture of the flat-panel monitors such as liquid crystal display device (LCD) (FPD), have to the glass as substrate processed
Glass substrate supply it is plasmarized after processing gas, be etched, the process of the corona treatments such as film process.Example
Such as, corona treatment is real in the state of being placed with substrate in the mounting table being arranged in the process container for forming vacuum atmosphere
It applies.
Such as following plasma processing apparatus is described in patent document 1: in the electrode plate being configured in vacuum tank
Surface on form the slot extended in length and breadth, insulating element is configured in the slot, thus in the multiple electrodes surrounded by insulating element
Plate surface configures each substrate, and multiple substrates are disposably etched.
In addition, described in patent document 2,3 when loading multiple substrates on the electrode to carry out corona treatment,
It (is the electricity for surrounding the protrusion of substrate-placing platform of aluminum according to patent document 2 that various dielectric technologies are configured around electrode
Dielectric ring, the first dielectric cap, the second dielectric cap.According to patent document 3, it is arranged in the metal plate to form base electrode
The dielectric plate of upper surface, on the dielectric plate conveying substrate pallet made of ceramics).
But all carried out in the state of being configured adjacently multiple substrates processed without discussion in Patent Documents 1 to 3 etc.
When gas ions processing, it is applied to the shadow of component of the RF power of each electrode portion for configuration around these substrates processed
Loud and its countermeasure.
Existing technical literature
Patent document
Patent document 1: No. 5094307 bulletins of Japanese Patent Publication No.: the 0011st~0015 section, Fig. 1,2
Patent document 2: Japanese Patent Publication 7-30468 bulletin: the 39th row of the 6th column~the 12nd row of the 7th column, Fig. 1
Patent document 3: No. 4361045 bulletins of Japanese Patent Publication No.: the 0028th, 0029 section, Fig. 1,3
Summary of the invention
Invention technical problem to be solved
It is being completed the present invention is based on such situation, and it is an object of the present invention to provide it is a kind of to multiple substrates processed simultaneously into
When row corona treatment, it is able to suppress the shadow for being applied to the RF power for the electrode portion for loading substrate processed to peripheral parts
Loud plasma processing apparatus.
For solving the technical solution of technical problem
Plasma processing apparatus of the invention, substrate processed is implemented using plasmarized processing gas etc.
Gas ions processing, above-mentioned plasma processing apparatus are characterised by comprising:
Process container is constituted for implementing the processing space of above-mentioned corona treatment, and is connected with to the processing
Space supplies the processing gas supply unit of processing gas and carries out the vacuum evacuation portion of the vacuum evacuation of above-mentioned processing space；
Plasma forming portion, the processing gas for being fed into above-mentioned processing space are plasmarized；
Metal first electrode portion is arranged in above-mentioned processing space, and upper surface is constituted to be located for loading one
The first substrate mounting surface of substrate is managed, and is applied RF power；
Leaving in above-mentioned processing space with above-mentioned first electrode portion and adjacent is arranged in metal second electrode portion
Position, upper surface constitute for load another processed substrate different from said one substrate processed the second substrate load
Face is set, and is applied RF power；
Surrounded when in terms of upper side around above-mentioned first substrate mounting surface and around above-mentioned the second substrate mounting surface this
The ring portion made of ceramics of the two；With
Dielectric members are arranged in the ring portion between above-mentioned first substrate mounting surface, the second substrate mounting surface
Lower face side is made of the dielectric constant dielectric lower than above-mentioned ceramics.
Invention effect
According to the present invention, with surround the upper surface of first electrode portion side is set first substrate mounting surface around and with
The first electrode portion leaves and the two around the second substrate mounting surface of the upper surface of the second electrode portion of adjacent position side
The following table of ring portion in the ring portion made of ceramics that mode is arranged, between first substrate mounting surface, the second substrate mounting surface
Surface side is acted on configured with the dielectric members being made of the dielectric constant dielectric lower than above-mentioned ceramics so can reduce
The influence of the electric field strength of the ring portion of the position.
Detailed description of the invention
Fig. 1 is that the vertical of the plasma processing apparatus of embodiment cuts side view.
Fig. 2 is the first electrode portion for being set to above-mentioned plasma processing apparatus, the top view in second electrode portion.
Fig. 3 is the vertical section of side view in above-mentioned first electrode portion, second electrode portion.
Fig. 4 is the vertical section of side view in the first electrode portion of manner of comparison, second electrode portion.
Fig. 5 is the schematic diagram in the first electrode portion to embodiment that indicates, the aluminium oxide spraying plating operation in second electrode portion.
Fig. 6 is the schematic diagram in the first electrode portion to manner of comparison that indicates, the aluminium oxide spraying plating operation in second electrode portion.
Fig. 7 is the vertical section of side view in the first electrode portion of another embodiment, second electrode portion.
Fig. 8 is the vertical section of side view in the first electrode portion of another embodiment, second electrode portion.
Fig. 9 is the explanatory diagram for indicating the analog result of the electric field strength on surface of ring portion.
Description of symbols
G substrate
1 plasma processing apparatus
10 process containers
12 processing spaces
18 vacuum exhaust mechanism
21 gas supply parts
3 high frequency antennas
41a, 41a ' first electrode portion
41b, 41b ' second electrode portion
412 gas feeding paths
413 protruding portions
42 lower layer's lateral electrodes
The first lower layer of 42a lateral electrode
The second lower layer of 42b lateral electrode
421 gas flow paths
44 dielectric members
45 sputtered films of bismuth
51 first substrate mounting surfaces
52 the second substrate mounting surfaces
6 ring portions.
Specific embodiment
Hereinafter, the structure of the plasma processing apparatus 1 of pair embodiments of the present invention is illustrated referring to Fig.1~3.
The plasma processing apparatus 1 of this example generates inductively coupled plasma, to the substrate processed such as G6 of rectangle
Half substrate is etched, ashing processing etc. has used the corona treatment of inductively coupled plasma.So-called half base of G6
Plate refers to that the length by the long side of the substrate of G6 size (1500mm × 1850mm) is divided into the substrate of the size of half, application
In the organic el display for example using Organic Light Emitting Diode (OLED:Organic Light Emitting Diode).
In the following description, which is known as substrate G.
The plasma processing apparatus 1 of this example includes: to be anodized by conductive material such as inner wall
The airtight process container 10 of square tube shape that aluminium is constituted, electrically grounded.Process container 10 is using by such as aluminium oxide (Al2O3)
The dielectric window 2 of the compositions such as equal ceramics, quartz divides antenna chamber 11 and about 12 processing space.
It is provided with inwardly between the side wall 111 of the antenna chamber 11 of process container 10 and the side wall 121 of processing space 12
Bearing part 13 outstanding loads dielectric window 2 on the bearing part 13.It is provided with and is joining in the side of process container 10
Carry out the carrying-in/carrying-out mouth 14 that the opening and closing of gate valve 15 is carried out when the substrate G of corona treatment.
Gas supply part 21 is embedded in the lower face side of dielectric window 2.Such as gas supply part 21 is by inner surface or outside
The conductive materials such as the aluminium that surface was anodized are constituted, and electrically grounded (not shown about ground state).In gas
The inside of supply unit 21 is formed with horizontal-extending gas flow path 22, is provided in the lower surface of gas supply part 21 from above-mentioned gas
Multiple gas discharge holes 23 that body flow path 22 extends downward.
On the other hand, it is connected with gas supply pipe 24 in the upper surface of gas supply part 21, the gas supply pipe 24 perforation
It dielectric window 2 and is connected to above-mentioned gas flow path 22.Moreover, gas supply pipe 24 penetrate through process container 10 top plate and to outside it
Side extends, and connect with the treating-gas supply system 25 comprising processing gas supply source and valve system etc..21 He of gas supply part
Gas supply pipe 24, treating-gas supply system 25 are equivalent to the processing gas supply unit of this example.
High frequency (RF) antenna 3 is configured in antenna chamber 11.High frequency antenna 3 will be by the metal structure of the good electric conductivity such as copper, aluminium
At the configuration of antenna 31 circlewise, the arbitrary shape such as vortex shape and constitute, set using the interval body 32 being made of insulating element
It is set to from dielectric window 2 and leaves.Wherein, high frequency antenna 3 can be the multiple antenna with mutiple antennas portion.
The terminal 33 of antenna 31 is connect with the power supply part 34 extended to the top of antenna chamber 11, the power supply part 34 it is upper
End side is connect via adaptation 36 with high frequency electric source 37 using supply lines 35.Then, when from high frequency electric source 37 to high frequency antenna 3 supply
When to such as RF power of frequency 13.56MHz, induction field is formed in processing space 12.
As a result, the processing gas supplied from gas supply part 21 is plasmarized because of the induction field, sense is generated
Answer coupled plasma.
The structure of antenna 31,33~high frequency electric source of terminal 37 is equivalent to the plasma forming portion of this example.
Lower side in processing space 12 is away from each other and adjacent for being placed in multiple such as 2 pieces of half substrate G of G6
Position first electrode portion 41a and second electrode portion 41b, clip dielectric window 2 configuration in the position opposite with high frequency antenna 3
It sets.First electrode portion 41a, second electrode portion 41b are arranged in shared lower layer's lateral electrode 42, first electrode portion 41a and lower layer
Lateral electrode 42 and second electrode portion 41b and lower layer's lateral electrode 42, conduct via mutual contact surface respectively.Such as first
Electrode portion 41a, second electrode portion 41b and lower layer's lateral electrode 42 are made of aluminium, stainless steel etc..
The upper surface of first electrode portion 41a constitutes first substrate mounting surface 51, loads a substrate G.In addition, second electrode
The upper surface of portion 41b constitutes the second substrate mounting surface 52, for load another substrate G different from said one substrate G, this
A little substrate G and another substrate G, implement common corona treatment.First electrode portion 41a, second electrode portion 41b difference
Rectangular metal plate is constituted when by overlooking.In addition, as shown in Fig. 2, first substrate mounting surface 51, the second substrate mounting surface 52
Also it is configured to when vertical view matched with the shape of substrate G be in rectangle.
As shown in Figures 1 to 3, in the plasma processing apparatus of this example 1, first electrode portion 41a, second electrode portion 41b
It configures and is being aligned with the long side of rectangular-shaped metal plate, away from each other and adjacent position.
41a, the upper surface of second electrode portion 41b and four sides in first electrode portion are formed as such as insulating properties
The sputtered films of bismuth 45 of the aluminium oxide of overlay film.Moreover, for example in the spraying plating for constituting first substrate mounting surface 51, the second substrate mounting surface 52
The inside of film 45 is configured with the electrode of sucker (not shown) (chuck), can be with by from direct-current power supply (not shown)
The electrostatic adsorption force absorption that direct current power generates keeps substrate G.
From lower layer's lateral electrode 42 of lower face side bearing first electrode portion 41a, second electrode portion 41b, by insulating element 46
It is supported from lower face side.Such as insulating element 46 is configured to rectangular-shaped annular solid, supports lower layer's lateral electrode 42 from lower face side
Peripheral part and the aftermentioned side insulating element 73 of lower layer's lateral electrode 42 is covered from side.
In addition, being held with penetrating through first electrode portion 41a, second electrode portion 41b, lower layer's lateral electrode 42 and processing in above-below direction
The mode of the bottom plate of device 10 is provided with multiple lift pins (not shown), and each lifter pin liter can be made with driving mechanism (not shown)
Drop.By the lifting work of these lifter pins, the front end of lifter pin is from first substrate mounting surface 51, the second substrate mounting surface 52
It protrudes and submerges, the handover of substrate G is carried out between external substrate carrying mechanism.
Moreover, lower layer's lateral electrode 42 is connect via supply lines 53 and adaptation 54 with high frequency electric source 55.At plasma
In reason, by from the 55 supply high frequency electric power of high frequency electric source, via lower layer's lateral electrode 42 to first electrode portion 41a, second electrode
The RF power that portion 41b is biased.
The space surrounded by the bottom plate of process container 10, insulating element 46 and lower layer's lateral electrode 42, from 12 quilt of processing space
Airtightly demarcate, even if the opening for passing through above-mentioned lifter pin and supply lines 53 etc. is arranged in the bottom plate in process container 10,
Also vacuum atmosphere will can be remained in processing space 12.
The cricoid cooling stream of 41a, second electrode portion 41b being internally provided with for example in circumferentially extending in first electrode portion
Road 411.To the cooling flowing path 411 by the heat-conduction medium, such as of cooling unit circulation supply predetermined temperature (not shown)
Galden (registered trademark), the temperature by adjusting heat-conduction medium are positioned in first electrode portion 41a, second electrode portion to control
The treatment temperature of each substrate G on 41b.
In addition, being internally provided in first electrode portion 41a, second electrode portion 41b from 42 side of lower layer's lateral electrode towards the
One substrate-placing face 51, the second substrate mounting surface 52 and the multiple gases penetrated through in each electrode portion 41a, 41b in above-below direction supply
To access 412.Gas feeding path 412 is towards the substrate G's for being placed in first substrate mounting surface 51, the second substrate mounting surface 52
The back side supplies heat transfer gas such as helium (He) gas.
In addition, lower layer's lateral electrode 42 is also used as each gas confession to first electrode portion 41a, the second electrode portion side 41b
The diffuser plate of the heat transfer gas of heat transfer gas is supplied to access 412.Such as it is formed in the upper surface of lower layer's lateral electrode 42
Groove portion.Then, it by configuring first electrode portion 41a, second electrode portion 41b in lower layer's lateral electrode 42, constitutes by these electrode portions
The gas flow path 421 that the lower surface of 41a, 41b and groove portion surround, and become lower end and the gas of each gas feeding path 412
The state that flow path 421 is connected to.The gas flow path 421 is connect with the supplying tubing (not shown) of heat transfer gas.
Moreover, between the peripheral part and first electrode portion 41a, second electrode portion 41b of the upper surface of lower layer's lateral electrode 42,
And between the peripheral part and insulating element 46 of the lower surface of lower layer's lateral electrode 42, the bottom surface of insulating element 46 and process container 10
Between, it is respectively arranged with o-ring 49 as a seal part.
In addition, the exhaust outlet 16 of the bottom surface of process container 10 is connect via exhaust line 17 with vacuum exhaust mechanism 18.This is true
Empty exhaust gear 18 is connect with pressure regulating part (not shown), thus will maintain desired vacuum degree in process container 10.Row
Gas circuit 17 and vacuum exhaust mechanism 18 are equivalent to the vacuum evacuation portion of this example.
As shown in Fig. 2, in first electrode portion 41a, second electrode portion 41b, to surround first substrate mounting surface throughout complete cycle
51, the mode around the second substrate mounting surface 52 is configured with the ring portion 6 being made of insulating ceramics such as aluminium oxide.
The ring portion 6 is configured in a manner of facing plasma generating space, so can make plasma by the ring portion 6
2 on first electrode portion 41a, second electrode portion 41b (first substrate mounting surface 51, the second substrate mounting surface 52) are concentrated on respectively
Block substrate G.
Such as the upper surface of ring portion 6 is configured to the upper surface height with first substrate mounting surface 51, the second substrate mounting surface 52
Spend aligned in position, first electrode portion 41a, second electrode portion 41b the side at least top surrounded by ring portion 6 throughout complete cycle.Such as
Shown in Fig. 2, ring portion 6 is constituted and combining multiple strip-shaped members of elongate body, is formed as with transversal rectangular-shaped framework
The mode of central portion is configured with the shape of a strip-shaped members.In other words, ring portion 6 is generally formed into 7 n segment display ns " 8 " word
The shape laid across.In addition, the individual diagram of strip-shaped members is omitted in Fig. 2, the shape of the ring portion 6 after assembling is integrally shown.
Such as constitute ring portion 6 strip-shaped members with a thickness of the value in the range of 5~30mm, the width dimensions of strip-shaped members
For the value in the range of 10~60mm.At this point, above-mentioned first substrate mounting surface 51 and the second substrate mounting surface 52 leave interval,
It is set as (the 25 of the length (750mm) of the short side of half substrate G of G6 10~60mm corresponding with the width dimensions of belt-shaped member
1// bis-~75th) value in the range of.
Moreover, in the lower face side of ring portion 6, when regarding first electrode portion 41a, second electrode portion 41b as integrated with covering
4 sides and lower layer's lateral electrode 42 under it side mode be configured with side insulating element 73.Side insulation division
Part 73 is made of the resin of the insulating properties such as the ceramics of the insulating properties such as such as aluminium oxide or polytetrafluoroethylene (PTFE), is when overlooking in rectangle
Annular solid.
In addition, in the peripheral side of side insulating element 73 and insulating element 46 configured with these side insulating elements 73 of covering
With the outside ring portion 74 of the side of insulating element 46.Such as outside ring portion 74 and above-mentioned ring portion 6 are equally made of ceramics, are to bow
Apparent time is in the annular solid of rectangle.
The rectangular-shaped framework of ring portion 6 is configured in the upper surface of above-mentioned side insulating element 73 and outside ring portion 74.Separately
Outside, the lower surface of side insulating element 73 is supported by insulating element 46.
Here, being provided in lower layer's lateral electrode 42 as in structure shown in manner of comparison in Fig. 4 and covering the lower layer side
The whole large-scale electrode portion 40 in the upper surface of electrode 42.Moreover, being formed in a manner of the upper face center for crossing electrode portion 40
Recess portion 400 matches a part of ring placing part 6, thus by first substrate mounting surface 51 and the second substrate mounting surface in the recess portion 400
52 separate.
In addition, in each figure of Fig. 4~8 described below, for Fig. 1~3 illustrated to be commonly constructed element attached
Add and appended drawing reference common used in Fig. 1~3.
However, in embodiment as be described hereinafter shown in analog result, it is known that in manner of comparison, by first substrate mounting surface 51
The electric field strength of the allocation position of the ring portion 6 isolated with the second substrate mounting surface 52 is got higher.If in the allocation position electricity of ring portion 6
Field intensity is got higher, then the ceramics for constituting ring portion 6 generate particle by grinding, can become the reason of causing substrate G to pollute.
Especially in rectangular-shaped first substrate mounting surface 51, the second substrate mounting surface 52 by the direction phase in alignment of long side
In the case where neighbour's configuration, the region that electric field strength is got higher expands to wide scope, and particle, which is led to the problem of, is possible to become significant.It closes
In this point, although if the interval for expanding first substrate mounting surface 51 and the second substrate mounting surface 52 is possibly able to reduce electricity
Field intensity, but will lead to the whole enlargement of plasma processing apparatus, so and unrealistic.
Then, as shown in Figure 1,3, the plasma processing apparatus 1 of this example is in lower layer's lateral electrode 42 by 2 electrode portions
(first electrode portion 41a, second electrode portion 41b) is configured away from each other, to surround around first substrate mounting surface 51 and
Mode both around two substrate-placing faces 52 is provided with ring portion 6.Moreover, by being located at first substrate mounting surface 51, the
The dielectric constant of the lower face side of ring portion 6 between two substrate-placing faces 52, ceramics of the configuration by dielectric constant than constituting ring portion 6 is low
Dielectric constitute dielectric members 44, reduce the electric field strength of the allocation position of ring portion 6 (referring to aftermentioned embodiment
Analog result).
In the plasma processing apparatus 1 shown in Fig. 1,3, dielectric members 44 are arranged to be filled by across interval phase
Pair first electrode portion 41a, the side of second electrode portion 41b, the lower surface of ring portion 6, lower layer's lateral electrode 42 upper surface surround
Space in.
In the case where the aluminium oxide for being about 9~11 or so by dielectric constant constitutes ring portion 6, as dielectric constant than the oxygen
Change the small dielectric of aluminium, fluororesin (such as the relative dielectric constant of polytetrafluoroethylene (PTFE) is about 2 or so) can be illustrated and quartz (is situated between
Electric constant is about 4 or so).
In addition, being in square when having the further advantage that by overlooking compared with the electrode portion 40 for the comparative example for being formed with recess portion 400
First electrode portion 41a, the second electrode portion 41b that the metal plate of shape is constituted utilize the formation for the sputtered films of bismuth 45 that spraying plating nozzle 7 carries out
Operation is more easier to carry out, and is capable of forming fine and close sputtered films of bismuth 45.
That is, since there is no be used to form sputtered films of bismuth 45 to first electrode portion 41a, the second electrode portion 41b in embodiment
Recess portion, so as shown in figure 5, be formed face of the depositing materials from spraying plating nozzle 7 relative to sputtered films of bismuth 45 can be made
It sprays angle and for approximate right angle carries out spraying plating.As a result, the densification that the attachment density for being capable of forming depositing materials particle is high
Sputtered films of bismuth 45.
In contrast, as shown in (a) of Fig. 6, (b), the electricity of the manner of comparison of the recess portion 400 with ring placing part 6 is formd
Pole portion 40, the ejection angle of the depositing materials from spraying plating nozzle 7 when the medial surface of recess portion 400 forms sputtered films of bismuth 45 are 50
~60 ° or so.As a result, the attachment density of depositing materials particle is lower compared with spraying the case where angle is approximate right angle,
It will form the sputtered films of bismuth 45 of compactness difference, it is possible to generate paradoxical discharge between plasma, and can not implement to substrate G
Normal corona treatment.
For this point, it is capable of forming first electrode portion 41a, the second electrode portion of the embodiment of fine and close sputtered films of bismuth 45
41b can effectively inhibit the generation of the paradoxical discharge between plasma.
The control being for example made of computer is provided in the plasma processing apparatus 1 with structure described above
Portion 100.The control unit 100 include by program, memory, CPU data processing division constituted etc., be incorporated into a program order with
So that sending control signal from each section of 100 plasma processing unit 1 of control unit, pass through predetermined step
To implement corona treatment to substrate G.The program is stored in computer storage medium such as floppy disk, CD, MO (photomagneto disk)
Etc. in storage unit (not shown), it is mounted on control unit 100.
The plasma processing apparatus 1 for having the function of above structure is illustrated.
Firstly, when the gate valve 15 of open plasma processing unit 1, using substrate carrying mechanism (not shown) by substrate
G is moved in processing space 12.Then, it by keeping multiple lift pins prominent from first substrate mounting surface 51, is supported with lifter pin
Substrate G.After avoiding substrate carrying mechanism out of processing space 12, fall lifter pin, thus in first substrate mounting surface
51 sides load a substrate G.Then, same movement is repeated with the lifter pin of 52 side of the second substrate mounting surface, thus exists
The second substrate mounting surface 52 loads another substrate G.In addition, defeated using that can carry out 2 pieces of substrate G in the state of transversely arranged
The substrate carrying mechanism sent carries out conveying, the handover of substrate G to first substrate mounting surface 51, the second substrate mounting surface 52 simultaneously.
Then, direct current power is supplied to the sucker electrode (not shown) in sputtered films of bismuth 45, keeps substrate G to adsorb.
After avoiding substrate carrying mechanism out of processing space 12, closing gate valve 15 makes from treating-gas supply system
The processing gas (such as etching gas) of 25 supplies is diffused into gas supply part 21, is supplied to processing via gas discharge hole 23
In space 12.In addition, true in processing space 12 by implementing from exhaust outlet 16 via exhaust line 17 to vacuum exhaust mechanism 18
Idle discharge gas will be adjusted to the pressure atmosphere of such as 0.66~26.6Pa (5~200mTorr) degree in processing space 12.
In addition, in order to avoid the temperature rising of substrate G or temperature change, it will be as heat transfer via gas feeding path 412
The back side of substrate G is supplied to the He gas of gas.
Then, it is applied to high frequency antenna 3 from high frequency electric source 37 by the RF power of above-mentioned 13.56MHz, thus via electricity
Medium window 2 forms uniform induction field in processing space 12.It is empty to be fed into processing for the induction field formed in this way
Between processing gas in 12 it is plasmarized, generate highdensity inductively coupled plasma.Using the plasma to block base
Plate G carries out corona treatment and for example carries out plasma etching to the defined film of substrate G.
At this point, being applied to first electrode portion 41a, second electrode portion from high frequency electric source 55 by the high-frequency electrical masterpiece of bias
41b, the plasma of processing gas is attracted to first electrode portion 41a, the second electrode portion side 41b as a result, is able to carry out vertical
The high etching process of property.In addition, by the ring portion made of ceramics 6 for being provided as insulating element around substrate G, plasma
It is attracted to the side substrate G, plasma can be made to focus on substrate G and improve etching speed.
At this point, by the lower face side for the ring portion 6 being configured between first electrode portion 41a, second electrode portion 41b, configuration
The dielectric members 44 that the low dielectric of the dielectric constant of ceramics by dielectric constant than constituting ring portion 6 is constituted, can reduce this
The electric field strength of the allocation position of ring portion 6.
Particle is generated by grinding with the ceramics for constituting ring portion 6 as a result, being able to suppress, can reduce plasma
To the generation of the pollution of substrate G in processing.
In addition, first electrode portion 41a, second electrode portion 41b use metal plate when overlooking in rectangle, in first electrode portion
41a, second electrode portion 41b surface form fine and close sputtered films of bismuth 45, thus inhibit the hair of paradoxical discharge in corona treatment
It is raw, normal corona treatment can be carried out to substrate G.
After the preset time implements plasma etching, stop supply processing gas and heat transfer gas,
And stops applying RF power to high frequency antenna 3 and first electrode portion 41a, second electrode portion 41b, terminate at plasma
Reason.Later, the pressure carried out in processing space 12 is adjusted, and the absorption holding for releasing substrate G passes through the step opposite with when moving in
By treated, substrate G is moved out.
Plasma processing apparatus 1 according to the present embodiment is arranged to surround in the side the upper surface of first electrode portion 41a
First substrate mounting surface 51 around and leave with first electrode portion 41a and the second electrode portion 41b of adjacent position
Among the ring portion made of ceramics 6 that mode both around the second substrate mounting surface 52 of top side is arranged, it is located at first substrate
The lower face side of ring portion 6 between mounting surface 51, the second substrate mounting surface 52 configures the electricity lower than above-mentioned ceramics by dielectric constant
The dielectric members 44 that medium is constituted.
As a result, can reduce the ring portion 6 being configured between first substrate mounting surface 51, the second substrate mounting surface 52
Electric field strength, so reducing above-mentioned electricity with the configuration space that for example expands a substrate-placing face 51, the second substrate mounting surface 52
The case where field intensity, is compared, and can be avoided the enlargement of plasma processing apparatus 1, and inhibit the rising with electric field strength
The particle from ring portion 6 generation.
Here, forming a substrate-placing face 51, the first electrode portion 41a of the second substrate mounting surface 52, second electrode portion
41b, be not limited to Fig. 1~3 illustrate by being constituted in the metal plate of rectangle when slab-sided vertical view relative to each other
Situation.
Such as it as shown in fig. 7, can be in each side relative to each other of first electrode portion 41a ', second electrode portion 41b '
The position of lower side is respectively formed and matches by the electrode portion 41b ' of other side, in a manner of the side 41a ' is prominent and front end abuts each other
The flange shape protruding portion 413 set.In addition, the front end of the protruding portion 413 configured in a manner of abutting each other can also be each other
It does not contact, and forms the gap of several millimeters of degree between these front ends.
At this point, dielectric members 44 are arranged to be filled by across the opposite first electrode portion 41a ' in interval, second electrode
Portion, the side of 41b ', the lower surface of ring portion 6, first electrode portion 41a ', second electrode portion, 41b ' each protruding portion 413,413
In the space that upper surface surrounds.
In this example, the lower layer side of sputtered films of bismuth 45 is not formed by being covered with the protruding portion 413 for being formed with sputtered films of bismuth 45
The upper surface of electrode 42 can be such that the insulating properties between plasma and lower layer's lateral electrode 42 improves, and further suppress abnormal put
The generation of electricity.
In addition, in the first electrode portion 41a ' for being provided with protruding portion 413, second electrode portion, forming sputtered films of bismuth 45 on 41b '
When, spraying plating processing first electrode portion 41a ', second electrode portion, 41b ' combination before carry out, so can be to protruding portion 413
The ejection angle that upper surface and upper surface carry out the depositing materials from spraying plating nozzle 7 is the spraying plating of approximate right angle, is capable of forming
Fine and close sputtered films of bismuth 45.
In addition, in the example shown in Fig. 8, other than first electrode portion 41a, second electrode portion 41b, lower layer's lateral electrode
Also the first lower layer lateral electrode 42a, the second lower layer lateral electrode 42b are divided into.
That is, above-mentioned first electrode portion 41a is arranged on the first lower layer lateral electrode 42a conducted each other, in addition, the second electricity
41b configuration in pole portion is being left and adjacent position with the first lower layer lateral electrode 42a, and be arranged with second electrode portion 41b each other
On the second lower layer lateral electrode 42b conducted.
Between first electrode portion 41a and the first lower layer lateral electrode 42a and second electrode portion 41b and the second lower layer side electricity
Between the 42b of pole, it is formed with for the gas flow path 421 to each gas feeding path 412 supply heat transfer gas.
In addition, high frequency electric source 55 and the first lower layer lateral electrode 42a, the second lower layer lateral electrode 42b are separately connected, via these
First lower layer lateral electrode 42a, the second lower layer lateral electrode 42b apply RF power to first electrode portion 41a, second electrode portion 41b.
In the example shown in Fig. 8, insulating element 46 by by the annular solid of rectangle and link the annular solid 2 long sides
Intermediate point barred body combination and constitutes, in " day shape " when vertical view.Moreover, dielectric members 44 be arranged to be filled by across
It is spaced opposite above-mentioned first electrode portion 41a, the side of second electrode portion 41b and the first lower layer lateral electrode 42a, the second lower layer side
In the space that the side of electrode 42b and the lower surface of ring portion 6 and insulating element 46 surround.Such as dielectric members 44 are by upper
State the bearing of insulating element 46 as barred body.
Alternatively, it is also possible to substitute the above-mentioned method for carrying out support dielectric component 44 as the insulating element 46 of barred body of setting,
Keep flange shape bearing part prominent from the first lower layer lateral electrode 42a, the second side lower layer lateral electrode 42b, utilizes the bearing part
Support dielectric component 44.
Here, not limited in the method for the bottom of processing space 12 configuration first electrode portion 41a, second electrode portion 41b
It include lower layer side shown in Fig. 1,3,7,8, in the upper surface setting assembling of the insulating element 46 for the annular solid for being configured to rectangle
Electrode 42 (or first lower layer lateral electrode 42a, the second lower layer lateral electrode 42b), first electrode portion 41a, second electrode portion 41b (or
First electrode portion 41a ', second electrode portion 41b '), dielectric members 44, ring portion 6, side insulating element 73, outside ring portion 74
The case where structural body (mounting table for being equivalent to substrate G).
To for example can also be arranged between lower layer's lateral electrode 42 and the bottom plate of process container 10 airtightly connect it is scalable
Bellows, the bellows inside configure in a manner of penetrating through above-mentioned bottom plate liftable pillar, via insulating element will
Lower layer's lateral electrode 42 is connect with the upper end of the pillar.In this case, such as on the bottom plate of process container 10, with
The substrates such as multiple handover pins (not shown) are respectively set in one substrate-placing face 51, the corresponding position of the second substrate mounting surface 52
Connecting mechanism makes handover pin prominent from first substrate mounting surface 51, the second substrate mounting surface 52 by pillar decline, with it is outer
The handover of substrate G between the substrate carrying mechanism in portion is carried out by handover pin.
In addition, the plasma formed in process container 10, is not limited to include forming inductively coupled plasma
High frequency antenna 3, dielectric window 2 the case where.Can also apply to be not dielectric window 2 but across by nonmagnetic metal,
Such as aluminum or aluminum alloy constitute and with process container 10 insulate metallic walls (metal window) be arranged high frequency antenna 3 the case where.?
In this case, processing gas may not be from gas supply part 21 supply but in metallic walls be arranged jet mechanism come into
Row supply.
Moreover, in the respective embodiments described above, carry out etc. to by electric induction coupling by processing gas is plasmarized
The example of gas ions processing is illustrated, but plasma forming portion does not limit the plasmarized method of processing gas
In this example.
Also it can be used and apply between metal gas supply part 21 and first electrode portion 41a, second electrode portion 41b
RF power forms capacitive coupling to by the plasmarized capacitance coupling plasma of processing gas or to processing space
12 import the microwave microwave plasma that processing gas is plasmarized, to carry out corona treatment.In these situations
Under plasma also applied to first electrode portion 41a, second electrode portion 41b form RF power with, ion introducing.
Then, in these plasma forming methods, first substrate mounting surface 51, the second substrate can also be set to
Dielectric members 44 are arranged in the lower face side of ring portion 6 between mounting surface 52, come realize the ring portion 6 allocation position electric field strength
Reduction.
Moreover, the type for the corona treatment implemented using the plasma processing apparatus 1 of this example, is not limited to
The etching process stated and ashing processing, are also possible to the film process carried out to substrate G.
In addition, the type of substrate G is also not limited to the example of above-mentioned half substrate of G6, or the rectangle of other sizes
Substrate.Moreover, the present invention is not limited to the rectangular substrates of FPD, also can be applied to other purposes such as solar battery
Rectangular substrate the case where being handled.In addition, the present invention can also apply to the circular substrate such as semiconductor wafer.
(embodiment)
(simulation)
Through simplation validation the case where the lower face side of ring portion 6 is provided with dielectric members 44 and the feelings that are not provided with
The difference of the electric field strength generated under condition on the surface of ring portion 6.
A. simulated conditions
The plate made of ceramics (relative dielectric constant: 9.9, being equivalent to ring portion 6) of (embodiment 1) in wide 35mm, thickness 10mm
Lower face side configured with wide 35mm, thickness 35mm polytetrafluoroethylene (PTFE) dielectric members 44 (relative dielectric constant: 2.0),
It is configured in two armpits (side) of these plates and dielectric members 44 made of ceramics and is equivalent to first electrode portion 41a, the second electricity
The simulation model of the aluminium of pole portion 41b.The model is corresponding with Fig. 3, embodiment shown in Fig. 7.Then, as defined in apply to aluminium
In the case where RF voltage, the electric field strength of each position of the aluminium and plate made of ceramics that expose in top side is simulated.
(embodiment 2) has carried out similarly to Example 1 other than dielectric members 44 are with a thickness of 60mm this point
Simulation.This model is corresponding with embodiment shown in Fig. 8.
(comparative example 1) is in addition to being not provided with 44 this point of dielectric members and also matching in the lower face side of plate made of ceramics
It is equipped with other than aluminium this point, has carried out simulation similarly to Example 1.This model is corresponding with manner of comparison shown in Fig. 4.
B. analog result
Embodiment 1,2 and the analog result of comparative example 1 are indicated with Fig. 9.The horizontal axis of Fig. 9 is indicated to be equivalent to the pottery of ring portion 6
The coordinate position [m] of width direction when the center of the width dimensions of the plate of porcelain is origin, the longitudinal axis indicate each position
Electric field strength [arbitrary unit: arbitrary unit].The analog result of embodiment 1,2 is substantially the same, so with one
Solid line indicates that the analog result of comparative example 1 is represented by dashed line.
The result of embodiment 1,2 according to Fig. 9 is it is found that be configured at the ceramic system of lower face side in dielectric members 44
Plate in, form following distribution: it is minimum in the center electric field strength of width direction, gone with to the end of width direction
After electric field strength is gradually increasing, electric field strength sharp rises.
In addition, the simulation about embodiment 1, being produced in the range of 5~35mm makes the thickness change of dielectric members 44
Multiple simulation models be simulated.The result of their simulation is roughly the same with the result of embodiment 1 shown in Fig. 9.
In contrast, it in comparative example 1, is formed in the region of the position steeply risen than electric field strength in the inner part flat
Electric-field intensity distribution, value regardless of in electric field strength of which position all than embodiment 1,2 it is high.
According to these analog results it is found that in the recess portion 400 of electrode portion 40 shown in Fig. 4 match ring placing part 6 method
It compares, it is lower than the ceramics for constituting the ring portion 6 by using the lower face side configuration dielectric constant of the ring portion 6 shown in Fig. 3,7,8
Dielectric members 44 method, the electric field strength on the surface of ring portion 6 can be made to reduce.
Claims (10)
1. a kind of plasma processing apparatus implements plasma to substrate processed using plasmarized processing gas
Processing, the plasma processing apparatus are characterised by comprising:
Process container is constituted for implementing the processing space of the corona treatment, and is connected with to the processing space
It supplies the processing gas supply unit of processing gas and carries out the vacuum evacuation portion of the vacuum evacuation of the processing space；
Plasma forming portion, the processing gas for being fed into the processing space are plasmarized；
Metal first electrode portion is arranged in the processing space, and upper surface is constituted for loading a base processed
The first substrate mounting surface of plate, and it is applied RF power；
Leaving in the processing space with the first electrode portion and adjacent position is arranged in metal second electrode portion
It sets, upper surface constitutes the second substrate mounting for loading another processed substrate different from one substrate processed
Face, and it is applied RF power；
It is surrounded when in terms of upper side around the first substrate mounting surface and both around the second substrate mounting surface
Ring portion made of ceramics；With
Dielectric members are arranged in the following table of the ring portion between the first substrate mounting surface, the second substrate mounting surface
Surface side is made of the dielectric constant dielectric lower than the ceramics.
2. plasma processing apparatus as described in claim 1, it is characterised in that:
The first electrode portion and second electrode portion, be arranged in conducted with the first electrode portion, second electrode portion it is shared
In lower layer's lateral electrode, the RF power is applied to the first electrode portion, second electrode portion via lower layer's lateral electrode.
3. plasma processing apparatus as described in claim 1, it is characterised in that:
The dielectric members are arranged to be filled by across the side for being spaced the opposite first electrode portion, second electrode portion
In the space that the upper surface in face, the lower surface of the ring portion and lower layer's lateral electrode surrounds.
4. plasma processing apparatus as claimed in claim 2, it is characterised in that:
It is respectively formed in the position of the lower side across each side for being spaced the opposite first electrode portion, second electrode portion
Flange shape protruding portion, the protruding portion are configured to prominent to the electrode part side of other side, and front end abuts each other,
The dielectric members are arranged to be filled by across the side for being spaced the opposite first electrode portion, second electrode portion
In the space that the upper surface of each protruding portion in face, the lower surface of the ring portion and the first electrode portion, second electrode portion surrounds.
5. the plasma processing apparatus as described in any one of claim 2~4, it is characterised in that:
Shape is distinguished between the first electrode portion and lower layer's lateral electrode and between the second electrode portion and lower layer's lateral electrode
At there is gas flow path, the gas flow path be used for via penetrate through the first electrode portion in above-below direction, it is more in second electrode portion
A gas feeding path, to be positioned in the first substrate mounting surface, the back side of substrate processed in the second substrate mounting surface
Supply heat transfer gas.
6. plasma processing apparatus as claimed in claim 2, it is characterised in that:
The first electrode portion is arranged in the first lower layer's lateral electrode conducted each other, second electrode portion configuration with institute
It states first lower layer's lateral electrode to leave and adjacent position, and the second lower layer conducted each other with the second electrode portion is set
In lateral electrode,
The RF power is applied to the first electrode portion, via the first lower layer lateral electrode, second lower layer's lateral electrode
Two electrode portions.
7. plasma processing apparatus as claimed in claim 6, it is characterised in that:
The dielectric members are arranged to be filled by across the side for being spaced the opposite first electrode portion, second electrode portion
In the space that face and the lower surface of first lower layer's lateral electrode, the side of second lower layer's lateral electrode and the ring portion surround.
8. plasma processing apparatus as claimed in claims 6 or 7, it is characterised in that:
Between the first electrode portion and first lower layer's lateral electrode and the second electrode portion and second lower layer's lateral electrode it
Between be respectively formed with gas flow path, which is used for via penetrating through the first electrode portion, second electrode in above-below direction
Multiple gas feeding paths in portion, to be positioned in the first substrate mounting surface, the base processed in the second substrate mounting surface
The back side of plate supplies heat transfer gas.
9. such as plasma processing apparatus according to any one of claims 1 to 8, it is characterised in that:
The upper surface and side in the first electrode portion including the first substrate mounting surface and including the second substrate load
The upper surface and side in the second electrode portion in face are covered by the overlay film of insulating properties.
10. such as plasma processing apparatus according to any one of claims 1 to 9, it is characterised in that:
The ceramics for constituting the ring portion are aluminium oxide, and the dielectric for constituting the dielectric members is fluororesin or quartz.
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| JP2017133016A JP6969182B2 (en) | 2017-07-06 | 2017-07-06 | Plasma processing equipment |
| JP2017-133016 | 2017-07-06 |
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| CN113179676A (en) * | 2019-11-27 | 2021-07-27 | 东芝三菱电机产业系统株式会社 | Active gas generating device |
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| JP2020093036A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093042A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093057A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093054A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093041A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093058A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093043A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093059A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093047A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093055A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093037A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093056A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093046A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| JP2020093060A (en) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | Game machine |
| CN113454761A (en) * | 2019-03-01 | 2021-09-28 | 日本发条株式会社 | Stage and stage manufacturing method |
| CN112017936B (en) * | 2019-05-28 | 2024-05-31 | 东京毅力科创株式会社 | Plasma processing apparatus |
| KR20230047158A (en) * | 2020-09-08 | 2023-04-06 | 닛폰 하츠죠 가부시키가이샤 | Stage and its manufacturing method |
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| TW201921483A (en) | 2019-06-01 |
| TWI754077B (en) | 2022-02-01 |
| KR102121655B1 (en) | 2020-06-10 |
| JP2019016697A (en) | 2019-01-31 |
| KR20190005750A (en) | 2019-01-16 |
| JP6969182B2 (en) | 2021-11-24 |
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