KR100842452B1 - Plasma processing apparatus and electrode assembly for the plasma processing apparatus - Google Patents

Abstract

An electrode assembly and a plasma processing apparatus for a plasma processing apparatus capable of achieving a uniform plasma density and capable of performing plasma processing with good in-plane uniformity without causing abnormal discharge or causing complicated assembly and maintenance. to provide. The electrode assembly for plasma processing apparatus is comprised by the electrode surface member 32, the spacer 37, the cooling plate 34, and the electrode support 33. As shown in FIG. At least one of the electrode surface member 32, the spacer 37, and the cooling plate 34 is made of a metal base composite material and has a plate-shaped member having a distribution of electrical resistance values having an electrical resistance value higher than that of the periphery of the center portion. .

Description

Electrode Assembly and Plasma Processing Apparatus for Plasma Processing Apparatus {PLASMA PROCESSING APPARATUS AND ELECTRODE ASSEMBLY FOR THE PLASMA PROCESSING APPARATUS}

BRIEF DESCRIPTION OF THE DRAWINGS The figure which shows the whole structure of the plasma etching apparatus which concerns on embodiment of this invention.

FIG. 2 is a diagram illustrating a main part of the plasma etching apparatus of FIG. 1. FIG.

3 is a diagram for explaining a state of distribution of resistance values.

4 is a diagram for explaining a state of another distribution of resistance values.

FIG. 5 is a diagram showing an entire structure of a plasma etching apparatus according to another embodiment. FIG.

The present invention relates to, for example, an electrode assembly for a plasma processing apparatus and a plasma processing apparatus for performing plasma processing such as plasma etching.

In the manufacturing process of a semiconductor device, a liquid crystal display device, etc., the plasma process which performs various processes using plasma is used frequently. As a plasma processing apparatus for performing such plasma processing, for example, a so-called parallel plate type plasma processing apparatus is known which generates a plasma by forming a high frequency electric field between a pair of opposing opposite electrodes arranged in a processing chamber.

In recent years, in the manufacturing process of a semiconductor device, etc., in order to improve productivity, the diameter of the semiconductor wafer which is a to-be-processed substrate is gradually increasing. For this reason, in the above-mentioned parallel plate type plasma processing apparatus, it is necessary to generate plasma with a uniform plasma density in a large area range, and to raise in-plane uniformity of plasma processing.

As described above, the plasma density tends to be higher at the center of the electrode and lower at the periphery. For this reason, in the electrode assembly for plasma processing apparatus, between the electrode surface member (for example, comprised with silicon etc.) which comprises the exposed surface exposed in a process chamber, and the spacer etc. which are members arrange | positioned at the back surface side, The gap is formed only near the center of the electrode, and the plasma density is made uniform. In addition, a technique is also known in which the center portion and the peripheral portion of the electrode surface member and the like are constituted by separate members having different electrical resistances to achieve uniform plasma density. (See Patent Document 1, for example)

(Patent Document 1) Japanese Unexamined Patent Publication No. 2000-323456.

In the above prior art, in the technique of providing a gap between the electrode surface member and the spacer disposed on the rear surface side thereof, there is a problem that abnormal discharge may occur in this gap. In addition, in the technique of constructing the central portion and the peripheral portion of the electrode surface member or the like with separate members having different electrical resistances, the number of constituent members increases, which causes a problem that assembly and maintenance of the electrode assembly for the plasma processing apparatus becomes complicated. have.

SUMMARY OF THE INVENTION The present invention has been made in response to the above-mentioned conventional circumstances, and the plasma density can be made uniform without incurring occurrence of abnormal discharge, or complicated assembly and maintenance, thereby achieving a plasma treatment having good in-plane uniformity. An object of the present invention is to provide an electrode assembly for a plasma processing apparatus and a plasma processing apparatus.

An electrode assembly for a plasma processing apparatus according to an aspect of the present invention is an electrode assembly for a plasma processing apparatus for generating a plasma by forming a high frequency electric field in a processing chamber in which a substrate to be processed is accommodated. It is characterized by comprising a plate-like member having a distribution of the electrical resistance value having an electrical resistance value higher than the peripheral portion.

The electrode assembly for plasma processing apparatus according to another aspect of the present invention is characterized in that the plate-shaped member is an electrode surface member constituting an exposed surface exposed in the processing chamber.

An electrode assembly for a plasma processing apparatus according to still another aspect of the present invention is characterized in that the plate-shaped member is a member disposed on the rear surface side of an electrode surface member constituting an exposed surface exposed in the processing chamber.

According to another aspect of the present invention, there is provided an electrode assembly for a plasma processing apparatus, wherein the plate-shaped member is disposed between the center portion and the periphery portion and has an electrical resistance value between the electrical resistance value of the central portion and the electrical resistance value of the peripheral portion. The branch is characterized by having an intermediate portion.

A plasma processing apparatus according to an aspect of the present invention includes an electrode assembly for a plasma processing apparatus according to the above aspects, and is configured to supply high frequency power to the electrode assembly for the plasma processing apparatus.

A plasma processing apparatus according to another aspect of the present invention includes the electrode assembly for the plasma processing apparatus according to the above aspects, and the electrode assembly for the plasma processing apparatus is configured to be at a ground potential.

Best Mode for Carrying Out the Invention Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows the cross-sectional structure of the entire plasma etching apparatus as the plasma processing apparatus according to the present embodiment, and FIG. 2 shows its main cross-sectional structure.

The plasma etching apparatus 1 is configured as a capacitively coupled parallel plate etching apparatus in which electrode plates face each other in parallel, and are connected to a power supply for plasma formation.

The plasma etching apparatus 1 has, for example, a processing chamber (process container) 10 made of anodized aluminum or the like and having a cylindrical shape, and the processing chamber 10 is grounded. At the bottom of the processing chamber 10, a substantially cylindrical susceptor support 12 for mounting a workpiece, such as a semiconductor wafer W, is provided via an insulating plate 11 such as ceramic. Moreover, on this susceptor support 12, the susceptor 13 which comprises a lower electrode is provided. A high pass filter (HPF) 62 is connected to this susceptor 13.

A coolant chamber 19 is provided inside the susceptor support 12. In the coolant chamber 19, a coolant is introduced and circulated through the coolant pipes 20a and 20b, and the cooling heat thereof is susceptor 13. Thermally conducts with respect to the semiconductor wafer W via WHEREIN, by which the semiconductor wafer W is controlled by desired temperature.

On the susceptor 13, an electrostatic chuck 14 having substantially the same shape as the semiconductor wafer W is provided. The electrostatic chuck 14 is composed of an electrode plate 15 made of a conductive film and a pair of insulating layers or insulating sheets sandwiching the electrode plate 15, and the electrode plate 15 is provided with a DC power supply 16. It is electrically connected via the connection terminal 68 and the movable feed rod 67 which are mentioned later. The electrostatic chuck 14 sucks and holds the semiconductor wafer W by a Coulomb force or a Johnson Lavec force due to a DC voltage applied by the DC power supply 16.

A plurality of pusher pins 56 are provided inside the susceptor 13 to protrude freely from the upper surface of the electrostatic chuck 14. These pusher pins 56 are driven by a drive mechanism made of, for example, a motor and a ball screw, and transfer the semiconductor wafer W to the electrostatic chuck 14 when the semiconductor wafer W is transferred between the transfer robot and the like. Support in the state lifted up.

On the susceptor 13, an annular focus ring 17 is arranged to surround the electrostatic chuck 14. The focus ring 17 is made of silicon or the like and has an effect of improving the uniformity of etching. Around the focus ring 17, a covering 54 for protecting the side of the focus ring 17 is disposed. Moreover, the cylindrical inner wall member 18 which consists of quartz is provided in the side surface of the susceptor 13 and the susceptor support 12, for example.

The gas passage 21 for supplying a heat conductive medium (for example, He gas, etc.) to the back surface of the semiconductor wafer W to the insulating plate 11, the susceptor support 12, the susceptor 13, and the electrostatic chuck 14. ) Is formed, and cooling heat of the susceptor 13 is transferred to the semiconductor wafer W through the heat conductive medium, so that the semiconductor wafer W is maintained at a predetermined temperature.

The upper electrode 22 is provided above the susceptor 13 so as to face the susceptor 13 in parallel. Between the susceptor 13 and the upper electrode 22 functions as a plasma generating space S. The upper electrode 22 is comprised from the annular outer upper electrode 23 and the disc shaped inner upper electrode 24 arrange | positioned inside this outer upper electrode 23. As shown in FIG. Between the inner upper electrode 24 and the outer upper electrode 23, a dielectric 25 made of, for example, quartz is disposed, and they are insulated. A capacitor is formed by sandwiching the dielectric 25 between the inner upper electrode 24 and the outer upper electrode 23. The capacitance of the capacitor is a desired value depending on the size of the gap between the inner upper electrode 24 and the outer upper electrode 23 and the dielectric constant of the dielectric 25. Between the outer upper electrode 23 and the side wall of the processing chamber 10, an annular insulating shielding member 26 made of, for example, alumina, yttrium oxide, or the like is hermetically disposed.

The outer upper electrode 23 is made of silicon or the like, for example. As shown in FIG. 2, the first high frequency power supply 31 is electrically connected to the outer upper electrode 23 via the matching unit 27, the feed bar 28, the connector 29, and the feed tube 30. Is connected. The first high frequency power supply 31 outputs a high frequency of 13.5 MHz or more, for example, a high frequency voltage of 60 MHz. The feed cylinder 30 is made of a substantially cylindrical or conical conductive plate such as an aluminum plate or a copper plate, the lower end of which is continuously connected to the outer upper electrode 23 in the circumferential direction, and the upper end of the power supply tube 30 through the connector 29. It is electrically connected to the feed bar 28. On the outside of the power supply cylinder 30, the side wall of the processing chamber 10 extends above the height position of the upper electrode 22 to form the cylindrical ground conductor 10a. The upper end of the cylindrical ground conductor 10a is electrically insulated from the feed rod 28 by the cylindrical insulating member 63. In this configuration, in the load circuit viewed from the connector 29, the feed tube 30, the outer upper electrode 23, and the cylindrical ground conductor 10a provide the feed tube 30 and the outer upper electrode 23. ), A coaxial line with a waveguide is formed.

The inner upper electrode 24 has a plurality of gas holes 32a and has an electrode surface member 32 constituting an exposed surface exposed in the processing chamber 10. On the back surface side of the electrode surface member 32, a cooling plate 34 having a plurality of gas holes 34a is similarly provided, and a plurality of gases are similarly provided between the cooling plate 34 and the electrode surface member 32. The spacer 37 having the hole 37a is provided. The cooling plate 34 is provided with a refrigerant circulation mechanism (not shown) and can be set to a desired temperature.

The electrode surface member 32, the spacer 37, and the cooling plate 34 are integrally supported by the electrode support 33. The electrode surface member 32 is fastened to the electrode support 33 by a bolt (not shown), and the head of the bolt is connected to the ring-shaped shield ring 53 arranged under the electrode surface member 32. Protected by

Inside the electrode support 33, a buffer chamber into which a processing gas to be described later is introduced is formed, and the buffer chamber has a central buffer chamber 35 and a peripheral buffer separated by an annular partition member 43 made of an O-ring or the like. It consists of a thread 36.

In this embodiment, the electrode assembly for a plasma processing apparatus is comprised by the electrode surface member 32, the spacer 37, the cooling plate 34, and the electrode support 33, and the holding | maintenance of the plasma etching apparatus 1 is carried out. In maintenance and the like, these can be replaced integrally. At least one of the electrode surface member 32, the spacer 37, and the cooling plate 34 is made of a metal base composite, and has a distribution of an electrical resistance value in which the central portion has an electrical resistance value higher than that of the peripheral portion. It is a shape member. As such a metal base composite material (MMC: Metal Matrix Composites), the metal base composite material made from Japan Ceratech Co., Ltd. can be used, for example.

In such a metal-based composite material, by adjusting the content ratio of ceramic to metal, it is possible to form an integral member having regions having different electric resistance values, whereby the electrode surface member 32 and the spacer 37 are formed. The cooling plate 34 can be manufactured as an integral plate-shaped member having a central portion having a higher resistance value than the peripheral portion. In addition, when the electrode surface member 32 is comprised from a metal base composite material, it is preferable to comprise it based on silicon. In addition, when the spacer 37 and the cooling plate 34 are comprised with a metal base composite material, it can comprise with an aluminum alloy etc. as a base material.

As described above, at least one of the electrode surface member 32, the spacer 37, and the cooling plate 34 constituting the electrode assembly for the plasma processing apparatus is made of a metal base composite material, and the central portion has an electrical resistance higher than the peripheral portion. By forming a plate-like member having a distribution of electrical resistance values having the same effect, for example, the same effect as the case where only a central portion is provided between the electrode surface member 32 and the spacer 37, that is, The effect of suppressing the increase in the plasma density can be achieved, and the plasma treatment with good in-plane uniformity can be performed. In addition, since no gap is formed, occurrence of abnormal discharge in the gap portion can be prevented. Moreover, by constructing an integral plate-shaped member, it is possible to prevent the structure from becoming complicated, assembling, maintenance, and the like, as in the case of a plurality of members. In addition, the distribution of the electric resistance value may be divided into two regions of the central portion 100a and the peripheral portion 100b, as shown schematically in FIG. 3, and as illustrated schematically in FIG. 4, the central portion ( Between 100a) and the peripheral part 100b, you may provide the intermediate | middle area | region 100c which has these intermediate resistance values, and may divide into three area | regions. It may also be divided into a larger number of areas.

In addition, the metal base composite material as described above can also be used for other constituent members of the plasma etching apparatus 1. For example, the processing chamber 10 is composed of a metal base composite material, a heater layer and an insulating layer surrounding the heater layer are provided inside, and the surface layer is a conductor layer, whereby an integrated chamber with a heater is incorporated. It can also be configured. With such a configuration, the temperature of the wall surface of the processing chamber 110 can be controlled, and the handling at the time of washing can be performed more easily than when the heater or Peltier element is separately attached.

The first high frequency power supply 31 is electrically connected to the electrode support 33 of the inner upper electrode 24 via the matching unit 27, the feed bar 28, the connector 29, and the upper feed tube 44. It is. In the middle of the upper feed tube 44, a variable capacitor 45 capable of variably adjusting the capacitance is arranged.

As shown in FIG. 1, a processing gas supply source 38 is disposed outside the processing chamber 10. From this process gas supply source 38, process gas can be supplied to the center buffer chamber 35 and the surrounding buffer chamber 36 at a desired flow rate ratio. That is, the gas supply pipe 39 from the processing gas supply source 38 branches to the branch pipes 39a and 39b on the way, and passes through the central buffer chamber 35 and the peripheral buffer chamber via the flow control valves 40a and 40b. 36). Often, the gas supply pipe 39 has a mass flow controller (MFC) 41 and an opening / closing valve 42 interposed therebetween.

An exhaust port 46 is provided at the bottom of the processing chamber 10, and through the exhaust manifold 47, an automatic pressure control valve (APC valve) 48 and a turbomolecular pump (TMP) ( 49) is connected. These automatic pressure control valves 48 and the turbomolecular pump 49 cooperate with each other so that the vacuum chamber can be evacuated within a predetermined pressure reducing atmosphere, for example, 1 Pa or less, inside the processing chamber 10. In addition, an annular baffle plate 50 having a plurality of vent holes is disposed between the exhaust port 46 and the plasma generating space S so as to surround the susceptor support 12. The baffle plate 50 prevents leakage of plasma from the plasma generation space S to the exhaust port 46.

In addition, a carry-out port 51 of the semiconductor wafer W is provided on the side wall of the processing chamber 10, and a gate valve 52 is provided here. The semiconductor wafer W is transported between adjacent load lock chambers (not shown) through the carrying-out port 51 while the gate valve 52 is opened. Further, a shutter 55 as a slide valve that moves up and down by air pressure is disposed between the carry-out and inlet 51 and the plasma generating space S. FIG. When the gate valve 52 is opened to carry out the semiconductor wafer W into the plasma generation space S of the semiconductor wafer W, the shutter 55 shuts off the delivery port 51 from the plasma generation space S, The plasma is prevented from leaking through the carrying in and out ports 51.

The second high frequency power supply 59 is connected to the susceptor 13 as the lower electrode via the lower feed passage 57 and the matching unit 58. The frequency of the second high frequency power supply 59 is preferably in the range of 2 to 27 MHz. The inner space of the lower feed tube 57 is connected to the electrode plate 15 of the electrostatic chuck 14, and an end portion of the connecting terminal 58 penetrating the susceptor 13 is exposed, and the inner space is exposed. The movable feeding rod 67 is arranged to move up and down in the air. When the DC power supply 16 applies a DC voltage to the electrode plate 15, the movable feed rod 67 rises to contact the connection terminal 68, and the DC power supply 16 directs the electrode plate 15 to the DC terminal 16. When no voltage is applied, the movable feed rod 67 descends and falls from the connection terminal 68.

The movable feed rod 67 has a flange at the bottom, and the lower feed tube 57 also has a flange protruding toward the inner space. A spring 60 made of silicon nitride (SiN), which is an insulator, is disposed between the flange of the movable feed rod 67 and the flange of the lower feed passage 57 to regulate the vertical movement of the movable feed rod 67. By constructing the spring 60 as an insulator in this manner, the electromagnetic induction due to the high frequency power does not occur and the spring 60 does not become a high temperature, so that the deterioration can be prevented.

The inner upper electrode 24 has a low pass filter (LPF) 61 for passing high frequency power from the second high frequency power supply 59 to ground without passing high frequency power from the first high frequency power supply 31 to ground. ) Is connected. On the other hand, the susceptor 13 is connected with a high pass filter (HPF) 62 for passing high frequency power from the first high frequency power supply 31 to ground.

When plasma etching the semiconductor wafer W by the plasma etching apparatus 1 having the above configuration, the semiconductor wafer W is processed from a load lock chamber (not shown) after the gate valve 52 is opened. It is carried in 10 and is mounted on the electrostatic chuck 14. Then, the direct current voltage is applied from the DC power supply 16 to the electrode plate 15 of the electrostatic chuck 14, whereby the semiconductor wafer W is electrostatically absorbed on the electrostatic chuck 14. Next, the gate valve 52 is closed, and the inside of the processing chamber 10 is evacuated to a predetermined degree of vacuum by the APC valve 48 and the TMP 49.

Thereafter, the opening / closing valve 42 is opened, and the flow rate of the predetermined processing gas (etching gas) from the processing gas supply source 38 is adjusted by the massflow controller 41, thereby allowing the central buffer chamber 35 to be opened. And a plasma generation space S in the processing chamber 10 through the peripheral buffer chamber 36.

The pressure in the processing chamber 10 is maintained at a predetermined pressure. Thereafter, high frequency power of a predetermined frequency is applied from the first high frequency power supply 31 to the upper electrode 22. As a result, a high frequency electric field is generated between the upper electrode 22 and the susceptor 13 serving as the lower electrode, so that the processing gas dissociates and becomes plasma.

On the other hand, the high frequency power of the frequency lower than the said 1st high frequency power supply 31 is applied from the 2nd high frequency power supply 59 to the susceptor 13 which is a lower electrode. As a result, ions in the plasma are attracted to the susceptor 13 side, and the anisotropy of etching is enhanced by ion assist.

At this time, since the ratio of the processing gas ejection flow rate can be arbitrarily adjusted in the central showerhead and the peripheral showerhead facing the semiconductor wafer W on the susceptor 13 in the upper upper electrode 24, the gas molecules or By controlling the spatial distribution of the radical density in the radial direction of the semiconductor wafer W, it is possible to arbitrarily control the spatial distribution of the etching characteristics by the radical base.

In the upper electrode 22, the outer upper electrode 23 is mainly used as the high frequency electrode for plasma generation, and the inner upper electrode 24 is made negative, so that the first high frequency power supply 31 and the second high frequency power supply ( 59 makes it possible to adjust the ratio of the electric field strength applied to the electrons immediately below the upper electrode 22. Therefore, by controlling the spatial distribution of ion density in the radial direction, it is possible to arbitrarily and finely control the spatial characteristics of the reactive ion etching.

In the inner upper electrode 24, at least one of the electrode surface member 32, the spacer 37, and the cooling plate 34 is made of a metal base composite, and the central portion has an electrical resistance value higher than that of the peripheral portion. It is a plate-shaped member having a distribution. Thereby, the high frequency electric field of a center part becomes strong and it can suppress that the plasma density of this part becomes high, and, therefore, the plasma process with favorable in-plane uniformity can be performed.

When the plasma etching is completed, the supply of high frequency power and the supply of the processing gas are stopped, and the semiconductor wafer W is carried out from the process chamber 10 in the reverse order to the above.

As described above, according to the present embodiment, the plasma density can be made uniform without causing occurrence of abnormal discharge and complicated assembly and maintenance, and plasma processing with good in-plane uniformity can be performed.

In addition, this invention is not limited to said embodiment, A various deformation | transformation is possible. For example, the plasma etching apparatus is not limited to the upper and lower high frequency application type of the parallel flat type shown in Figs. 1 and 2, and, for example, as shown in Fig. 5, the first high frequency is applied to the lower electrode (susceptor 13). The same applies to the lower two frequency application type plasma etching apparatus 1a or the like to which the power supply 31 and the second high frequency power supply 59 are connected.

In addition, about the plasma etching apparatus 1a of FIG. 5, the code | symbol corresponding to the part corresponding to the plasma etching apparatus 1 shown in FIGS. 1 and 2 is attached | subjected, and the overlapping description is abbreviate | omitted, In this case, an upper electrode Reference numeral 22 is electrically connected to the ground, and is at ground potential. The electrode surface member 32 or the like constituting the upper electrode 22 is formed as a plate-shaped member made of a metal base composite material and having a distribution of electrical resistance values having an electrical resistance value higher than that of the periphery in the center portion. The same effect can be obtained. In addition, in the plasma etching apparatus 1a of FIG. 5, a rotatable magnet 70 is provided outside the processing chamber 10 to form a magnetic field in the processing chamber 10 to control plasma. have.

ADVANTAGE OF THE INVENTION According to this invention, the electrode assembly for plasma processing apparatuses can be made uniform of plasma density, and plasma processing with favorable in-plane uniformity can be performed, without generating abnormal discharge, or causing complicated assembly and maintenance. And a plasma processing apparatus.

Claims (8)

An electrode assembly for a plasma processing apparatus for generating a plasma by forming a high frequency electric field in a processing chamber in which a substrate to be processed is accommodated, An electrode assembly for a plasma processing apparatus, comprising a plate-shaped member made of a metal-based composite material and having a central portion having an electrical resistance value higher than the peripheral portion. The method according to claim 1, And said plate member is an electrode surface member constituting an exposed surface exposed in said processing chamber. The method according to claim 1, And said plate member is a member disposed on the rear surface side of an electrode surface member constituting an exposed surface exposed in said processing chamber. The method according to claim 1, And said plate member has an intermediate portion located between said central portion and said peripheral portion and having an electrical resistance value between the electrical resistance value of said central portion and the electrical resistance value of said peripheral portion. The method according to claim 2, And said plate member has an intermediate portion located between said central portion and said peripheral portion and having an electrical resistance value between the electrical resistance value of said central portion and the electrical resistance value of said peripheral portion. The method according to claim 3, And said plate member has an intermediate portion located between said central portion and said peripheral portion and having an electrical resistance value between the electrical resistance value of said central portion and the electrical resistance value of said peripheral portion. The electrode assembly for plasma processing apparatus of any one of Claims 1-6 is provided, And a high frequency power supply to the electrode assembly for plasma processing apparatus. The electrode assembly for plasma processing apparatus of any one of Claims 1-6 is provided, And the electrode assembly for the plasma processing apparatus is configured to have a ground potential.

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