JP6298293B2 - Substrate processing apparatus, shutter mechanism, and plasma processing apparatus - Google Patents

Description

  Various aspects and embodiments of the present invention relate to a substrate processing apparatus, a shutter mechanism, and a plasma processing apparatus.

  2. Description of the Related Art Conventionally, a plasma processing apparatus that performs a desired plasma process on a wafer that is a substrate to be processed for a semiconductor device is known. The plasma processing apparatus includes, for example, a chamber that accommodates a wafer. In the chamber, a mounting table (hereinafter referred to as a “susceptor”) on which the wafer is mounted and functions as a lower electrode, and an upper electrode that faces the susceptor are disposed. ing. Further, a high frequency power source is connected to at least one of the mounting table and the upper electrode, and the mounting table and the upper electrode apply high frequency power to the processing chamber space.

  In the plasma processing apparatus, a processing gas supplied into a processing chamber space is converted into plasma by high-frequency power to generate ions and the like, and the generated ions and the like are guided to the wafer to perform desired plasma processing, for example, etching processing on the wafer. .

  In addition, an opening for loading / unloading the semiconductor wafer is provided on the side wall of the chamber, and a gate valve for opening and closing the opening is disposed. The semiconductor wafer is carried in and out by opening and closing the gate valve. In the chamber, a deposition shield that prevents the adhesion of etching by-products (depots) is provided along the inner wall of the chamber, and the opening is also provided in the deposition shield according to the position of the opening of the chamber.

  Since the gate valve is arranged outside the chamber (atmosphere side), a space is formed in which the opening projects to the atmosphere side. When the plasma generated in the chamber diffuses to the space of the opening, the uniformity of the plasma deteriorates or the seal member of the gate valve deteriorates due to the plasma. Therefore, the space formed by the chamber and the opening of the deposition shield and the plasma generation space are blocked by the shutter. In addition, for example, the shutter drive unit is disposed below the opening, and the shutter is driven to open and close by the drive unit.

Further, in the state where the opening of the deposition shield is blocked by the shutter, the solid aluminum surface formed in the opening of the deposition shield and the conductive spirals provided at the upper and lower portions of the shutter come into contact with each other. The shutter and the deposit shield are conducted, and the shutter is grounded via the deposit shield. Hastelloy (registered trademark) may be used as a material for the conductive spiral.

JP 2011-171663 A JP 2002-141403 A

  However, when the plasma treatment is performed in a state where the solid aluminum surface formed in the opening of the deposition shield is in contact with the Hastelloy spiral provided on the shutter, the solid aluminum surface is It corrodes at the contact surface with Hastelloy's spiral and changes to a non-conductive substance. If the solid surface of aluminum changes to a non-conductive material, even if the Hastelloy spiral comes into contact with this material, the deposition shield and the shutter will not conduct and the shutter will not be properly grounded. Therefore, the plasma distribution in the chamber becomes abnormal, the etching rate decreases, and an EPD (End-Point Detection) error occurs.

  In one embodiment, the disclosed substrate processing apparatus is disposed along a cylindrical chamber having a first opening for loading a substrate to be processed, along an inner wall of the chamber, and the first opening. A protective member having a second opening at a position corresponding to the above, and a plate-shaped opening / closing member that opens and closes the second opening, and is provided at an inner edge of the second opening of the protective member. Is provided with a first member formed of Hastelloy, a second member formed of Hastelloy is provided on the outer edge of the opening / closing member, and the opening / closing member closes the second opening. The first member and the second member are in contact with each other.

  According to one aspect of the disclosed substrate processing apparatus, there is an effect that generation of an EPD error can be suppressed.

FIG. 1 is a cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is an enlarged cross-sectional view showing a schematic configuration around the upper electrode in FIG. FIG. 3 is a perspective view showing an example of a schematic shape of the deposition shield. FIG. 4 is an enlarged cross-sectional view showing an example of the configuration near the shutter. FIG. 5 is a diagram illustrating an example of a spiral configuration. FIG. 6 is an enlarged view showing an example of the configuration around the upper portion of the shutter. FIG. 7 is an enlarged view showing an example of the configuration around the lower portion of the shutter. FIG. 8 is an explanatory view showing the position of the upper end of the opening of the deposition shield. FIG. 9 is a diagram illustrating an example of experimental results of the comparative example and the example of the present application. FIG. 10A is a diagram illustrating an example of a temporal change in the emission intensity of the reaction product in the comparative example. FIG. 10B is a diagram illustrating an example of a temporal change in the emission intensity of the reaction product in the example. FIG. 11 is an enlarged cross-sectional view illustrating an example of the configuration in the vicinity of the shutter in the first modification. FIG. 12 is an enlarged view showing an example of the configuration around the upper portion of the shutter in the first modification. FIG. 13 is a view of the shutter opened from the outside of the deposition shield. FIG. 14 is an enlarged view showing an example of the configuration around the lower portion of the shutter in the first modification. FIG. 15 is an enlarged view showing an example of the configuration around the upper portion of the shutter in the second modification. FIG. 16 is an enlarged view showing an example of the configuration around the upper portion of the shutter in the third modification. 17 is a cross-sectional view taken along the line AA in FIG. FIG. 18 is an enlarged view showing an example of the configuration around the upper part of the shutter in the fourth modification. FIG. 19 is an enlarged view showing an example of the configuration around the upper portion of the shutter in the fifth modification. FIG. 20 is an enlarged view showing an example of the configuration around the upper part of the shutter in the sixth modification. FIG. 21 is an enlarged view showing an example of the configuration around the upper part of the shutter in Modification 7.

  In one embodiment, the disclosed substrate processing apparatus is disposed along a cylindrical chamber having a first opening for carrying a substrate to be processed and an inner wall of the chamber, and corresponds to the first opening. A protective member having a second opening at a position to be opened, and an opening / closing member that is formed in a plate shape and opens and closes the second opening. The inner edge of the second opening of the protective member is formed of hastelloy. The second member formed of Hastelloy is provided on the outer edge of the opening / closing member, and when the opening / closing member closes the second opening, the first member and the first member 2 members abut.

  In one embodiment of the disclosed substrate processing apparatus, the first member is either a layer formed of hastelloy or an elastic member formed of hastelloy, and the second member is It is either the layer formed of hastelloy or the elastic member formed of hastelloy.

  In one embodiment of the disclosed substrate processing apparatus, a layer formed of hastelloy fixes a member formed of hastelloy to the inner edge of the second opening of the protective member or the outer edge of the opening / closing member. It is formed by doing.

  In one embodiment of the disclosed substrate processing apparatus, the first member is an elastic member formed of hastelloy, and the second member is formed in a U-shaped cross section by hastelloy. Screwed to the upper end of the member.

  In one embodiment of the disclosed substrate processing apparatus, the first member is formed in a spiral shape by Hastelloy, and the center axis is along the upper end of the second opening of the protective member. A recess along the outer shape of the first member is formed on the surface of the second member that is in contact with the first member in a state where the opening / closing member closes the second opening.

  In one embodiment, the disclosed shutter mechanism is a shutter mechanism that blocks an opening for carrying a substrate into a space in a plasma processing apparatus, and includes a first member that partitions a space in which plasma is generated. A shielding member that shields the opening so that plasma does not diffuse outside from the space, and a contact mechanism that abuts the first member and the shielding member when the shielding member shields the opening; The contact mechanism includes a groove formed in one of the first member or the shielding member, an elastic member formed of Hastelloy and fitted in the groove, and formed of Hastelloy, on the other of the first member or the shielding member. And a second member that is in contact with the elastic member and electrically connects the first member and the shielding member when the shielding member shields the opening.

  In one embodiment of the disclosed shutter mechanism, the first member and the shielding member are formed in a curved shape, and the contact mechanism is configured along the curved shape.

  In one embodiment of the disclosed shutter mechanism, the second member is a shielding member in which the cross section is formed in a substantially U-shape and the opening is shielded, and the surface facing the space side. The upper surface is in contact with the elastic member.

  In one embodiment of the disclosed shutter mechanism, the second member has a substantially L-shaped cross section and is provided on the first member, and the shielding member shields the opening, and the lower surface. Abuts against the elastic member.

  In one embodiment, the disclosed plasma processing apparatus has a space in the plasma processing apparatus, and a chamber in which a substrate is carried in the space and a space in which plasma is generated are provided along a side wall in the chamber. A first member that partitions the first member, a shielding member that shields an opening provided in the first member so that plasma does not diffuse outside from the space, and a first member that shields the opening. A contact mechanism for contacting the member and the shielding member, and the contact mechanism includes a groove formed in one of the first member and the shielding member, and an elastic member formed of Hastelloy and fitted in the groove. The second member is formed of Hastelloy, and is provided on the other of the first member or the shielding member. When the shielding member shields the opening, the second member is brought into contact with the elastic member to electrically connect the first member and the shielding member. Member.

  In one embodiment of the disclosed plasma processing apparatus, the first member and the shielding member are formed in a curve, and the contact mechanism is configured along the curve.

  In one embodiment, the disclosed plasma processing apparatus faces the space side in the shielding member in which the second member has a substantially U-shaped cross section and shields the opening. It is provided on the rear surface side of the surface, and the upper surface is in contact with the elastic member.

  In one embodiment of the disclosed plasma processing apparatus, the second member has a substantially L-shaped cross section and is provided on the first member, and the shielding member shields the opening. The lower surface contacts the elastic member.

  Hereinafter, embodiments of a disclosed substrate processing apparatus will be described in detail with reference to the drawings. The invention disclosed by this embodiment is not limited. Each embodiment can be appropriately combined as long as the processing contents do not contradict each other.

(Embodiment)
FIG. 1 is a cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is an enlarged cross-sectional view showing a schematic configuration around the upper electrode in FIG. In the following, a case where the substrate processing apparatus is a plasma processing apparatus will be described as an example. However, the present invention is not limited to this and may be any substrate processing apparatus having a shutter member.

  In FIG. 1, a plasma processing apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus. For example, a cylindrical chamber (processing chamber) 10 made of aluminum whose surface is anodized (anodized) is provided. Prepare. The chamber 10 is grounded for safety. However, the present invention is not limited to this, and the plasma processing apparatus 1 is not limited to the capacitively coupled parallel plate plasma etching apparatus, but may be any type such as inductively coupled plasma ICP (Inductively Coupled Plasma), microwave plasma, or magnetron plasma. The plasma processing apparatus may be used.

  A cylindrical susceptor support 12 is disposed at the bottom of the chamber 10 via an insulating plate 11 such as ceramic, and a conductive susceptor 13 made of, for example, aluminum is disposed on the susceptor support 12. ing. The susceptor 13 has a configuration that functions as a lower electrode, and places a substrate to be etched, such as a semiconductor wafer W.

  An electrostatic chuck (ESC) 14 for holding the semiconductor wafer W with an electrostatic attraction force is disposed on the upper surface of the susceptor 13. The electrostatic chuck 14 includes an electrode plate 15 made of a conductive film and a pair of insulating layers sandwiching the electrode plate 15, for example, a dielectric such as Y 2 O 3, Al 2 O 3, and AlN. It is electrically connected via a connection terminal. The electrostatic chuck 14 attracts and holds the semiconductor wafer W by a Coulomb force or a Johnson-Rahbek force caused by a DC voltage applied by the DC power supply 16.

  In addition, a plurality of pusher pins (for example, three) as lift pins that can be protruded from the upper surface of the electrostatic chuck 14 are disposed at a portion where the semiconductor wafer W is attracted and held on the upper surface of the electrostatic chuck 14. These pusher pins are connected to a motor (not shown) via a ball screw (not shown), and from the upper surface of the electrostatic chuck 14 due to the rotational motion of the motor converted into a linear motion by the ball screw. Project freely. Thereby, the pusher pin penetrates the electrostatic chuck 14 and the susceptor 13 and moves up and down in the inner space. When the electrostatic chuck 14 sucks and holds the semiconductor wafer W when the semiconductor wafer W is etched, the pusher pins are accommodated in the electrostatic chuck 14 and the etched semiconductor wafer W is removed from the plasma generation space S. When unloading, the pusher pin protrudes from the electrostatic chuck 14 and lifts the semiconductor wafer W upward from the electrostatic chuck 14.

  A focus ring 17 made of, for example, silicon (Si) for improving the etching uniformity is disposed on the upper surface around the susceptor 13, and a cover that protects the side of the focus ring 17 around the focus ring 17. A ring 54 is arranged. The side surfaces of the susceptor 13 and the susceptor support base 12 are covered with a cylindrical member 18 made of, for example, quartz (SiO 2).

  Inside the susceptor support 12, for example, a refrigerant chamber 19 extending in the circumferential direction is arranged. A refrigerant of a predetermined temperature, for example, cooling water, is circulated and supplied to the refrigerant chamber 19 from an external chiller unit (not shown) through the pipes 20a and 20b. The refrigerant chamber 19 controls the processing temperature of the semiconductor wafer W on the susceptor 13 according to the temperature of the refrigerant.

  Further, a heat transfer gas, for example, helium (He) gas is supplied from a heat transfer gas supply mechanism (not shown) between the upper surface of the electrostatic chuck 14 and the back surface of the semiconductor wafer W through the gas supply line 21. The heat transfer between the wafer W and the susceptor 13 is efficiently and uniformly controlled.

  An upper electrode 22 is disposed above the susceptor 13 so as to be parallel to and opposed to the susceptor 13. Here, the space formed between the susceptor 13 and the upper electrode 22 functions as a plasma generation space S (processing chamber space). The upper electrode 22 is disposed so as to be insulated from the outer upper electrode 23 on the radially inner side of the outer upper electrode 23 and the annular or donut-shaped outer upper electrode 23 disposed to face the susceptor 13 at a predetermined interval. And a disk-shaped inner upper electrode 24. Further, regarding the plasma generation, the outer upper electrode 23 is the main and the inner upper electrode 24 is the auxiliary relationship.

  As shown in FIG. 2, an annular gap (gap) of, for example, 0.25 to 2.0 mm is formed between the outer upper electrode 23 and the inner upper electrode 24, and the dielectric 25 made of, for example, quartz is formed in the gap. Is placed. Further, a ceramic body may be disposed in the gap instead of the dielectric body 25 made of quartz. The outer upper electrode 23 and the inner upper electrode 24 sandwich the dielectric 25 to form a capacitor. The capacitance C1 of the capacitor is selected or adjusted to a desired value according to the size of the gap and the dielectric constant of the dielectric 25. An annular insulating shielding member 26 made of, for example, alumina (Al 2 O 3) or yttria (Y 2 O 3) is airtightly disposed between the outer upper electrode 23 and the side wall of the chamber 10.

  The outer upper electrode 23 is preferably made of a low-resistance conductor or semiconductor with low Joule heat, such as silicon. An upper high frequency power supply 31 is electrically connected to the outer upper electrode 23 through an upper matching unit 27, an upper power feeding rod 28, a connector 29, and a power feeding cylinder 30. The upper high frequency power supply 31 outputs a high frequency voltage of 13.5 MHz or higher, for example, 60 MHz. The upper matching unit 27 matches the load impedance to the internal (or output) impedance of the upper high-frequency power source 31, and when the plasma is generated in the chamber 10, the output impedance and the load impedance of the upper high-frequency power source 31 are apparent. Functions to match up. The output terminal of the upper matching unit 27 is connected to the upper end of the upper power feed rod 28.

  The power supply cylinder 30 is made of a substantially cylindrical or conical conductive plate, such as an aluminum plate or a copper plate, and has a lower end continuously connected to the outer upper electrode 23 in the circumferential direction and an upper end connected to the upper power supply rod 28 via a connector 29. It is electrically connected to the lower end of the. Outside the power supply cylinder 30, the side wall of the chamber 10 extends upward from the height position of the upper electrode 22 to form a cylindrical ground conductor 10 a. The upper end portion of the cylindrical ground conductor 10 a is electrically insulated from the upper power feed rod 28 by a cylindrical insulating member 69. In this configuration, in the load circuit viewed from the connector 29, a coaxial line having the power supply tube 30 and the outer upper electrode 23 as a waveguide is formed by the power supply tube 30, the outer upper electrode 23, and the ground conductor 10a.

  The inner upper electrode 24 has a number of electrode plate gas vent holes 32a (first gas vent holes), for example, an upper electrode plate 32 made of a semiconductor material such as silicon or silicon carbide (SiC), and the upper electrode plate 32. And an electrode support 33 made of aluminum whose surface is anodized, for example. The upper electrode plate 32 is fastened to the electrode support 33 by bolts (not shown). The head of the bolt is protected by an annular shield ring 53 disposed at the lower part of the upper electrode plate 32.

  In the upper electrode plate 32, each electrode plate gas vent 32 a penetrates the upper electrode plate 32. Inside the electrode support 33, a buffer chamber into which a processing gas to be described later is introduced is formed. The buffer chamber is divided into two buffer chambers divided by an annular partition member 43 made of, for example, an O-ring, that is, a central buffer chamber. 35 and a peripheral buffer chamber 36, and the lower part is opened. A cooling plate (hereinafter referred to as “C / P”) 34 (intermediate member) that closes the lower portion of the buffer chamber is disposed below the electrode support 33. The C / P 34 is made of aluminum whose surface is anodized, and has a large number of C / P gas vent holes 34a (second gas vent holes). In C / P34, each C / P gas vent hole 34a penetrates C / P34.

  A spacer 37 made of a semiconductor material such as silicon or silicon carbide is interposed between the upper electrode plate 32 and the C / P 34. The spacer 37 is a disk-shaped member, and penetrates the spacer 37, a number of upper surface annular grooves 37b formed concentrically with the disk on the surface facing the C / P 34 (hereinafter simply referred to as “upper surface”). A plurality of spacer gas vents 37a (third gas vents) opened at the bottom of each upper annular groove 37b are provided.

  The inner upper electrode 24 uses a processing gas introduced into a buffer chamber from a processing gas supply source 38, which will be described later, as a C / P gas vent hole 34a for the C / P 34, a spacer gas flow path for the spacer 37, and an electrode for the upper electrode plate 32. The gas is supplied to the plasma generation space S through the plate gas vent 32a. Here, the central buffer chamber 35 and the plurality of C / P gas vent holes 34a, the spacer gas flow paths, and the electrode plate gas vent holes 32a existing therebelow constitute a central shower head (processing gas supply path), The peripheral buffer chamber 36 and the plurality of C / P gas vent holes 34a, the spacer gas flow paths, and the electrode plate gas vent holes 32a existing therebelow constitute a peripheral shower head (processing gas supply path).

  As shown in FIG. 1, a processing gas supply source 38 is disposed outside the chamber 10. The processing gas supply source 38 supplies the processing gas to the central buffer chamber 35 and the peripheral buffer chamber 36 at a desired flow rate ratio. Specifically, a gas supply pipe 39 from the processing gas supply source 38 is branched into two branch pipes 39a and 39b and connected to the central buffer chamber 35 and the peripheral buffer chamber 36, respectively. The branch pipes 39a and 39b have flow control valves 40a and 40b (flow control devices), respectively. Since the conductances of the flow paths from the processing gas supply source 38 to the central buffer chamber 35 and the peripheral buffer chamber 36 are set to be equal, the central buffer chamber 35 and the peripheral buffer chamber are adjusted by adjusting the flow rate control valves 40a and 40b. The flow rate ratio of the processing gas supplied to 36 can be arbitrarily adjusted. Further, a mass flow controller (MFC) 41 and an open / close valve 42 are arranged in the gas supply pipe 39.

  With the above configuration, the plasma processing apparatus 1 adjusts the flow rate ratio of the processing gas introduced into the central buffer chamber 35 and the peripheral buffer chamber 36 to thereby adjust the flow rate FC of the gas ejected from the central shower head and the peripheral shower head. The ratio (FC / FE) with the flow rate FE of the gas to be ejected is arbitrarily adjusted. Note that the flow rate per unit area of the processing gas ejected from the central shower head and the peripheral shower head can be individually adjusted. Further, by disposing two processing gas supply sources corresponding to the branch pipes 39a and 39b, the gas type or gas mixing ratio of the processing gas ejected from the central shower head and the peripheral shower head is set independently or separately. It is also possible. However, the present invention is not limited to this, and the plasma processing apparatus 1 cannot adjust the ratio between the flow rate FC of the gas ejected from the central shower head and the flow rate FE of the gas ejected from the peripheral shower head. Also good.

  The upper high frequency power supply 31 is electrically connected to the electrode support 33 of the inner upper electrode 24 via the upper matching unit 27, the upper power feed rod 28, the connector 29, and the upper power feed tube 44. A variable capacitor 45 capable of variably adjusting the capacitance is disposed in the middle of the upper feeding cylinder 44. The outer upper electrode 23 and the inner upper electrode 24 may be provided with a refrigerant chamber or a cooling jacket (not shown), and the temperature of the electrode may be controlled by the refrigerant supplied from an external chiller unit (not shown).

  An exhaust port 46 is provided at the bottom of the chamber 10, and an automatic pressure control valve (hereinafter referred to as “APC valve”), which is a variable butterfly valve, is connected to the exhaust port 46 via an exhaust manifold 47. 48 and a turbo molecular pump (hereinafter referred to as “TMP”) 49 are connected. The APC valve 48 and the TMP 49 cooperate to depressurize the plasma generation space S in the chamber 10 to a desired degree of vacuum. An annular baffle plate 50 having a plurality of ventilation holes is disposed between the exhaust port 46 and the plasma processing space S so as to surround the susceptor 13, and the baffle plate 50 extends from the plasma generation space S to the exhaust port 46. Prevent plasma leakage.

  An opening 51 for loading / unloading the semiconductor wafer W is provided outside the side wall of the chamber 10, and a gate valve 52 for opening and closing the opening 51 is disposed. Further, a substantially cylindrical deposition shield 71 is disposed along the inner wall of the chamber 10 inside the chamber 10. FIG. 3 is a perspective view showing an example of a schematic shape of the deposition shield. As shown in FIG. 3, the deposition shield 71 has an opening 71 a on the side wall, and is disposed in the chamber 10 along the inner wall of the chamber 10 so that the opening 71 a communicates with the opening 51 of the chamber 10. . The deposition shield 71 functions as a protective member that prevents etching by-products (deposition) from adhering to the inner wall of the chamber 10. The inner wall of the substantially cylindrical deposition shield 71 is coated by thermal spraying with, for example, yttria (Y2O3).

  The semiconductor wafer W is loaded and unloaded by opening and closing the gate valve 52. However, since the gate valve 52 is disposed outside the chamber 10 (atmosphere side), a space in which the opening 51 protrudes to the atmosphere side is formed. Therefore, the plasma generated in the chamber 10 diffuses to that space, and the uniformity of the plasma deteriorates and the seal member of the gate valve 52 deteriorates. Therefore, the shutter 55 blocks the opening 71 a of the deposition shield 71, thereby blocking the opening 51 of the chamber 10 and the plasma generation space S. A driving unit 56 that drives the shutter 55 is disposed below the deposition shield 71, for example, and the shutter 55 is driven up and down by the driving unit 56 to open and close the opening 71a of the deposition shield 71. The deposition shield 71 and the shutter 55 may be referred to as a shutter mechanism.

  In the plasma processing apparatus 1, a lower high-frequency power source (first high-frequency power source) 63 is electrically connected to the susceptor 13 as a lower electrode via a lower matching unit 60. The lower high frequency power source 63 outputs a high frequency voltage of 2 MHz to 27 MHz, for example, 2 MHz. The lower matching unit 60 is for matching the load impedance with the internal (or output) impedance of the lower high-frequency power source 63, and when the plasma is generated in the plasma generation space S in the chamber 10, It functions so that the internal impedance and the load impedance seem to coincide. Moreover, you may connect another 2nd lower high frequency power supply (2nd high frequency power supply) to a lower electrode. In this case, as the first high frequency power source, for example, a high frequency voltage of 2 MHz is applied, and as the second high frequency power source, for example, a high frequency voltage of 13.56 MHz is applied.

  In the plasma processing apparatus 1, a low-pass filter that passes high-frequency power (2 MHz) from the lower high-frequency power supply 63 to the ground without passing high-frequency power (60 MHz) from the upper high-frequency power supply 31 to the ground. LPF) 61 is electrically connected. The LPF 61 is preferably composed of an LR filter or an LC filter. However, since a sufficiently large reactance can be imparted to the high frequency power from the upper high frequency power supply 31 even with a single conductor, one conductor is electrically connected to the inner upper electrode 24 instead of the LR filter or the LC filter. Just connect. On the other hand, the susceptor 13 is electrically connected to a high-pass filter (HPF) 62 for passing high-frequency power from the upper high-frequency power supply 31 to the ground.

  Next, when etching is performed in the plasma processing apparatus 1, first, the gate valve 52 and the shutter 55 are opened, and the semiconductor wafer W to be processed is loaded into the chamber 10 and placed on the susceptor 13. Then, a processing gas, for example, a mixed gas of C4F8 gas and argon (Ar) gas is introduced from the processing gas supply source 38 into the central buffer chamber 35 and the peripheral buffer chamber 36 at a predetermined flow rate and flow rate ratio, and the APC valve 48 and TMP 49 are used. The pressure of the plasma generation space S in the chamber 10 is set to a value suitable for etching, for example, any value within a range of several mTorr to 1 Torr.

  Further, the upper high frequency power supply 31 applies high frequency power for plasma generation, such as 60 MHz, to the upper electrode 22 (outer upper electrode 23, inner upper electrode 24) with a predetermined power, and the lower high frequency power supply 63 applies bias for example, for example. A high frequency power of 2 MHz or the like is applied to the lower electrode of the susceptor 13 with a predetermined power. Further, a DC voltage is applied from the DC power source 16 to the electrode plate 15 of the electrostatic chuck 14 to electrostatically attract the semiconductor wafer W to the susceptor 13.

  Then, plasma is generated in the processing space S by the processing gas ejected from the shower head, and the surface to be processed of the semiconductor wafer W is physically or chemically etched by the radicals and ions generated at this time.

  In the plasma processing apparatus 1, the plasma is densified in a preferable dissociated state by applying a high frequency in a high frequency region (for example, 5 to 10 MHz or more at which ions cannot move) to the upper electrode 22. In addition, high-density plasma can be formed even under lower pressure conditions.

  On the other hand, in the upper electrode 22, the outer upper electrode 23 is mainly used as a high-frequency electrode for plasma generation, the inner upper electrode 24 is used as a sub-field, and an electric field applied to electrons immediately below the upper electrode 22 by the upper high-frequency power supply 31 and the lower high-frequency power supply 63. The intensity ratio is adjustable. Therefore, the spatial distribution of ion density can be controlled in the radial direction, and the spatial characteristics of reactive ion etching can be controlled arbitrarily and finely.

  Next, the configuration near the shutter 55 in the present embodiment will be described. FIG. 4 is an enlarged view showing an example of the configuration near the shutter. The shutter 55 is a horizontally long plate-like member that opens and closes the opening 71a of the deposition shield 71, and has a substantially L-shaped cross section made of, for example, an aluminum material. The surface of the shutter 55 is coated with, for example, yttria (Y2O3).

  Further, as shown in the cross-sectional view of FIG. 4, a spiral 57 that is a conductive elastic member is fitted in the formed groove at the upper end portion of the shutter 55. Further, as shown in FIG. 4, in the lower portion of the shutter 55 having a substantially L-shaped cross section, the groove formed also on the upper surface of the extending portion 55a extending to the plasma generation space S side (right side in FIG. 4). A conductive spiral 57 is fitted. In the present embodiment, the spiral 57 is formed of, for example, hastelloy.

  FIG. 5 is a diagram illustrating an example of a spiral configuration. For example, as shown in FIG. 5, the spiral 57 in the present embodiment is formed by spirally winding a band-shaped member formed of, for example, Hastelloy. For example, the spiral 57 is disposed so as to extend in the width direction of the upper end of the shutter 55 so that the central axis a with respect to the winding direction b of the spiral shown in FIG. The spiral 57 is also arranged on the upper surface of the extending portion 55a of the shutter 55 so as to extend in the width direction of the shutter 55 so that the central axis a of the spiral is along the upper surface of the extending portion 55a below the shutter 55. ing.

  In the present embodiment, for example, one spiral 57 is disposed along the upper end of the shutter 55 at the upper end of the shutter 55. In addition, on the upper surface of the extending portion 55 a of the shutter 55, for example, a plurality of spirals 57 are arranged at a predetermined length so as to extend in the width direction of the shutter 55 at intervals. A plurality of spirals 57 having a predetermined length may be arranged at the upper end of the shutter 55 at intervals from each other, and each spiral 57 may be arranged along the upper end of the shutter 55. You may arrange | position so that it may extend | stretch in the width direction.

  The shutter 55 is pushed upward by the drive unit 56 shown in FIG. 4 to close and shield the opening 71 a of the deposition shield 71, and is lowered downward by the drive unit 56 to open the opening of the deposition shield 71. Open 71a. In a state where the shutter 55 closes the opening 71 a of the deposition shield 71, the spirals 57 arranged at the upper and lower portions of the shutter 55 come into contact with the deposition shield 71, so that the shutter 55 is interposed via the spiral 57. And electrically connected. Since the deposition shield 71 is in contact with the ground conductor 10 a of the chamber 10, the shutter 55 is grounded via the deposition shield 71 with the opening 71 a of the deposition shield 71 being closed.

  FIG. 6 is an enlarged view showing an example of the configuration around the upper portion of the shutter. In the present embodiment, a layer 71b made of hastelloy is provided on the surface of the deposition shield 71 with which the spiral 57 of the shutter 55 contacts, as illustrated in FIG. The Hastelloy layer 71b is formed to have a thickness of, for example, several hundreds μm by spraying Hastelloy on the solid aluminum surface of the deposition shield 71. In a state where the shutter 55 closes the opening 71 a of the deposition shield 71, the spiral 57 provided on the upper portion of the shutter 55 comes into contact with the Hastelloy layer 71 b formed on the deposition shield 71. In addition, you may call a contact mechanism including the groove | channel provided in the upper part of the shutter 55, the spiral 57 inserted in the said groove | channel, and the layer 71b formed in the lower surface of the deposition shield 71. FIG.

  FIG. 7 is an enlarged view showing an example of the configuration around the lower portion of the shutter. In the present embodiment, a layer 71c formed of hastelloy is provided on the surface of the deposition shield 71 with which the spiral 57 of the shutter 55 contacts, as illustrated in FIG. The Hastelloy layer 71c is formed to a thickness of, for example, several hundred μm by spraying Hastelloy on the solid aluminum surface of the deposition shield 71. In a state where the shutter 55 closes the opening 71 a of the deposition shield 71, the spiral 57 provided at the lower portion of the shutter 55 contacts the Hastelloy layer 71 c formed on the deposition shield 71. The contact mechanism including the groove provided on the upper surface of the extending portion 55 a of the shutter 55, the spiral 57 fitted in the groove, and the layer 71 c formed on the lower surface of the deposition shield 71 is also referred to as a contact mechanism. Good.

  In the present embodiment, each spiral 57 disposed in the shutter 55 is formed of hastelloy, and therefore the shutter 55 and the deposit shield 71 are not illustrated in the state where the shutter 55 closes the opening 71a of the deposit shield 71. As shown in FIGS. 6 and 7, electrical connection is established through a spiral 57 made of hastelloy and layers 71 b and 71 c made of hastelloy. In the layers 71b and 71c formed of hastelloy, a surface that contacts the spiral 57 may be provided with a recess along the outer shape of the spiral 57. Thereby, the layers 71b and 71c formed of hastelloy can contact the spiral 57 on a wider surface in a state where the shutter 55 closes the opening 71a of the deposition shield 71, thereby reducing the contact resistance. it can.

  Here, in the embodiment in which the surface of the deposition shield 71 with which the spiral 57 of the shutter 55 abuts is composed of Hastelloy layers 71b and 71c and the comparative example in which the surface is made of a solid aluminum surface, plasma treatment is performed in the chamber 10. The experimental results for each case will be described. In the experiment, a predetermined plasma process is repeated in each of the example and the comparative example, and the spiral 57 on the upper part of the shutter 55 comes into contact at each time point when the integrated time (RF TIME) of the plasma process is about 100 hours and about 400 hours. The state of the surface of the deposition shield 71 was examined.

  FIG. 8 is an explanatory view showing the position of the upper end of the opening of the deposition shield. In the experiment, as shown in FIG. 8, the states of position A, position B, and position C on the surface of the deposition shield 71 (the upper end surface of the opening 71a) with which the spiral 57 above the shutter 55 abuts were examined.

  In the comparative example, as is apparent from the experimental results shown in FIG. 9, the solid surface of the aluminum of the deposition shield 71 at each of the positions A, B, and C has a plasma treatment time of 142 hours. The thickness of the surface altered by corrosion reaches 7 to 12 μm. Further, at the time when the integration time of the plasma treatment is 392.5 hours, the corrosion of the surface of the solid aluminum surface further progresses, and the thickness of the surface altered by the corrosion increases to 13 to 22 μm.

  Here, hastelloy is mainly composed of nickel, and aluminum is a metal having a higher ionization tendency than nickel. Therefore, when the shutter 55 closes the opening 71a of the deposition shield 71 and the Hastelloy spiral 57 abuts against the solid aluminum surface formed on the deposition shield 71, the solid aluminum surface having a high ionization tendency is selected. Corrosive. Further, since the outer shape of the spiral 57 is a curved surface, when the spiral 57 comes into contact with the surface of the deposition shield 71, the electric field tends to concentrate around the contact surface. Therefore, it is considered that in the course of the plasma treatment, the reaction between fluorine of the processing gas and aluminum on the solid surface of the deposition shield 71 is accelerated, and corrosion (fluoride) on the solid surface of the deposition shield 71 is accelerated.

  In the comparative example, when the substance contained in the corroded portion generated on the solid surface of aluminum was analyzed, a large amount of insulating AlOF and AlFx was contained. Since a corrosive substance (fluoride) is formed between the contact surfaces of the deposition shield 71 with which the spiral 57 of the shutter 55 contacts, the conduction between the deposition shield 71 and the spiral 57 of the shutter 55 is hindered, and the potential of the shutter 55 is reduced. Does not fall to ground potential. Therefore, the processing gas is supplied to the contact surface, and the etching rate is reduced. As a result, the amount of reaction product released from the semiconductor wafer W by etching in the chamber 10 decreases, and the intensity of light emitted from the reaction product in the chamber 10 decreases. As a result, an abnormal decrease in the emission intensity is detected as an EPD error in the end point detection device that measures the intensity of light having a specific wavelength emitted from the reaction product in the plasma.

  FIG. 9 is a diagram illustrating an example of experimental results of the comparative example and the example of the present application. As is clear from the experimental results shown in FIG. 9, in the embodiment of the present application, the hastelloy surface of the deposition shield 71 at each of the positions A, B, and C indicates that the accumulated time of the plasma treatment is 100 hours. The thickness of the surface altered by corrosion is improved to about 1-2 μm. Further, even when the integration time of the plasma treatment is 377.4 hours, the thickness of the surface altered by the corrosion remains about 1 to 2.5 μm, and the surface corrosion hardly progresses.

  Thereby, in this embodiment, the electrical connection between the spiral 57 of the shutter 55 and the deposition shield 71 is maintained, and the deterioration of the uniformity of the plasma generated in the chamber 10 and the reduction of the etching rate are suppressed. Thereby, the amount of the reaction product released from the semiconductor wafer W by the etching is maintained at a constant amount, and the intensity of light emitted from the reaction product in the chamber 10 is also maintained at a constant value. Therefore, while the etching of the film to be processed is continued, the light intensity of the reaction product emitted by the etching is stabilized, and the occurrence of EPD error is suppressed.

FIG. 10A is a diagram illustrating an example of a temporal change in the emission intensity of the reaction product in the comparative example. FIG. 10B is a diagram illustrating an example of a temporal change in the emission intensity of the reaction product in the example. 10A and 10B, in the respective configurations of the comparative example and the example, for example, the time of the emission intensity of the reaction product emitted when the plasma treatment is performed on the polysilicon film under the following processing conditions, for example. Changes are shown.
(Processing conditions)
Processing pressure: 1.33 Pa (10 mTorr)
RF power; upper part = 200W, lower part = 300W
Processing gas; HBr = 360 sccm

  If the plasma processing is performed as designed, for example, after about 15 seconds from the start of the plasma processing, the emission intensity of the reaction product drops sharply and is detected as the end point by the end point detection device. On the other hand, in the comparative example, as shown in FIG. 10A, a sudden drop in the emission intensity of the reaction product was detected around 7.8 seconds. In the comparative example, since the timing of the decrease in the emission intensity is too early, the end point detection apparatus detects the decrease in the emission intensity in the vicinity of 7.8 seconds as an EPD error. As described above, since the continuity between the shutter 55 and the deposition shield 71 cannot be obtained, the amount of the reaction product released from the semiconductor wafer W during the etching is reduced, and the emission intensity of the reaction product is increased. This is thought to be due to a sharp drop.

  On the other hand, in this example, as shown in FIG. 10B, for example, a sudden drop in emission intensity was detected in about 15 seconds as designed. Therefore, no EPD error was detected in this example. As described above, since the electrical connection between the shutter 55 and the deposition shield 71 is maintained, the reaction product released from the semiconductor wafer W during the etching of the polysilicon film is constant in the chamber 10. This is probably because the emission intensity of the reaction product was maintained.

  The embodiment has been described above. According to the plasma processing apparatus 1 of the present embodiment, occurrence of an EPD error can be suppressed.

(Modification 1)
Next, Modification 1 of the configuration of the shutter 55 and the deposit shield 71 will be described. FIG. 11 is an enlarged cross-sectional view illustrating an example of the configuration in the vicinity of the shutter in the first modification. FIG. 12 is an enlarged view showing an example of the configuration around the upper portion of the shutter in the first modification. FIG. 13 is a view of the shutter opened from the outside of the deposition shield. FIG. 14 is an enlarged view showing an example of the configuration around the lower portion of the shutter in the first modification. Except for the points described below, in FIG. 11 to FIG. 14, the configurations denoted by the same reference numerals as those in FIG. 4 to FIG. 7 are the same as or similar to the configurations in FIG.

  A spiral 57 made of hastelloy is provided at the upper end of the opening 71a of the deposition shield 71 in the first modification, for example, as shown in FIGS. Further, as shown in the cross-sectional views of FIGS. 11 and 12, for example, a member 58a having a substantially U-shaped cross section formed of Hastelloy is disposed on the upper portion of the shutter 55 in the first modification. The upper surface of the U-shaped member 58 a comes into contact with the Hastelloy spiral 57. The member 58a provided on the upper portion of the shutter 55, the groove formed on the lower surface of the deposition shield 71, and the spiral 57 fitted in the groove may be referred to as a contact mechanism. The member 58a is fixed to the shutter 55 by, for example, a screw 58b. For example, as shown in FIG. 13, the member 58 a made of hastelloy is disposed so as to extend in the lateral direction of the shutter 55 along the upper end portion of the shutter 55.

  In a state where the shutter 55 closes the opening 71 a of the deposition shield 71, the member 58 a formed of Hastelloy contacts the spiral 57 disposed in the upper end groove of the opening 71 a of the deposition shield 71. Further, in a state where the shutter 55 closes the opening 71 a of the deposition shield 71, a recess along the outer shape of the spiral 57 may be provided on the surface 58 c of the member 58 a that abuts on the spiral 57 of the deposition shield 71. In this case, in a state where the shutter 55 closes the opening 71a of the deposition shield 71, the member 58a can contact the spiral 57 of the deposition shield 71 on a wider surface, and the contact resistance can be reduced.

  Further, for example, as shown in FIG. 14, in the state where the shutter 55 closes the opening 71 a of the deposition shield 71, the surface of the deposition shield 71 with which the spiral 57 disposed in the extending portion 55 a of the shutter 55 abuts has a Hastelloy surface. The member 73 formed by is attached. The groove provided on the upper surface of the extending portion 55a of the shutter 55, the spiral 57 fitted in the groove, and the member 73 attached to the lower surface of the deposition shield 71 may be referred to as a contact mechanism. The member 73 is attached to the deposit shield 71 by pressing one end of the pin 72 made of, for example, aluminum into the deposition shield 71 and pressing the other end of the pin 72 into the member 73. Note that a recess along the outer shape of the spiral 57 may be provided on the surface of the member 73 that contacts the spiral 57 disposed in the extending portion 55 a of the shutter 55.

  As in Modification 1, the member 58a formed of hastelloy is attached to the shutter 55 by the screw 58b, and the member 73 formed of hastelloy is press-fitted and attached to the pin 72 press-fitted into the deposition shield 71. Compared to the case where Hastelloy is sprayed on the surface of the shutter 55 or the deposition shield 71, the work load when the Hastelloy layer is provided on the shutter 55 or the deposition shield 71 can be reduced. In addition, since the mechanical strength of the Hastelloy layer can be increased, particle contamination in the chamber 10 due to peeling of the Hastelloy layer can be prevented.

(Modification 2)
Next, a second modification of the configuration of the shutter 55 and the deposit shield 71 will be described. FIG. 15 is an enlarged view showing an example of the configuration around the upper portion of the shutter in the second modification. In the modified examples 2 to 7 to be described below, except for the points described in the respective modified examples, the configurations denoted by the same reference numerals as those in FIGS. The description is omitted because it is the same as or similar to the configuration in FIG. Further, in Modifications 2 to 7 described below, the portion of the deposition shield 71 that contacts the spiral 57 provided in the extending portion 55a below the shutter 55 is configured in the same manner as in the above-described embodiment or Modification 1. Is done.

  For example, as shown in the cross-sectional view of FIG. 15, a member 59 made of hastelloy is arranged on the upper portion of the shutter 55 in the second modification so as to extend in the width direction of the shutter 55 along the upper end of the shutter 55. Is done. For example, as shown in the cross-sectional view of FIG. 15, the shutter 55 is provided with a dovetail groove 55 c that is formed so as to become wider as it becomes deeper and is formed along the width direction of the shutter 55. On the lower surface of the member 59 made of hastelloy, a protrusion 59a formed so that the cross section has the same shape as the dovetail groove 55c is provided.

  The member 59 is attached to the shutter 55 by inserting the protrusion 59a into the dovetail groove 55c of the shutter 55 from the left end side or the right end side of the shutter 55 and moving the member 59 along the dovetail groove 55c of the shutter 55. It is done. The member 59 is fixed to the shutter 55 from, for example, a screw or the like from the side that is not in contact with the shutter 55. A recess along the outer shape of the spiral 57 may be provided on the surface of the member 59 that contacts the spiral 57 disposed in the deposition shield 71. Further, a member 59 provided on the upper portion of the shutter 55, a groove formed on the lower surface of the deposition shield 71, and a spiral 57 fitted in the groove may be referred to as a contact mechanism.

  Also in the second modification, the Hastelloy member 59 provided in the shutter 55 and the Hastelloy spiral 57 provided in the deposition shield 71 are in contact with each other in a state where the shutter 55 closes the opening 71 a of the deposition shield 71. Even when the plasma processing is performed, the electrical connection between the shutter 55 and the deposition shield 71 is maintained, and the occurrence of an EPD error is suppressed.

(Modification 3)
Next, a third modification of the configuration of the shutter 55 and the deposit shield 71 will be described. FIG. 16 is an enlarged view showing an example of the configuration around the upper portion of the shutter in the third modification. 17 is a cross-sectional view taken along the line AA in FIG.

  In the third modification, a spiral 57 made of hastelloy is disposed at the upper end of the shutter 55, for example, as shown in FIG. Further, for example, as shown in FIG. 17, pins 74 formed of hastelloy are press-fitted at a predetermined interval on the surface of the deposit shield 71 with which the spiral 57 of the shutter 55 contacts. When the shutter 55 closes the opening 71 a of the deposition shield 71, the spiral 57 of the shutter 55 contacts the Hastelloy pin 74 press-fitted into the deposition shield 71.

  When the shutter 55 closes the opening 71a of the deposition shield 71, the surface of the deposition shield 71 that contacts the spiral 57 of the shutter 55 may be anodized, for example, and coated with yttria (Y2O3) or the like. It may be. Further, the Hastelloy pin 74 is press-fitted into the deposition shield 71 so as to slightly protrude from the surface of the deposition shield 71, and in the state where the shutter 55 closes the opening 71a of the deposition shield 71, the spiral 57 of the shutter 55 is You may make it contact | abut to the pin 74 of Hastelloy, without contacting the surface of the deposition shield 71. FIG. Further, the surface of the pin 74 that contacts the spiral 57 of the shutter 55 may be recessed along the outer shape of the spiral 57. The contact mechanism may include a groove provided in the upper part of the shutter 55, a spiral 57 fitted in the groove, and a pin 74 press-fitted into the lower surface of the deposition shield 71.

  Also in the third modification example, the Hastelloy spiral 57 provided on the shutter 55 and the Hastelloy pin 74 provided on the deposition shield 71 are in contact with each other when the shutter 55 closes the opening 71 a of the deposition shield 71. Even when the plasma processing is performed, the electrical connection between the shutter 55 and the PoShield 71 is maintained, and the occurrence of EPD error is suppressed.

(Modification 4)
Next, Modification 4 of the configuration of the shutter 55 and the deposit shield 71 will be described. FIG. 18 is an enlarged view showing an example of the configuration around the upper part of the shutter in the fourth modification.

  In the fourth modification, a spiral 57 made of hastelloy is disposed at the upper end of the shutter 55, for example, as shown in FIG. For example, as shown in FIG. 18, a member 76 made of hastelloy is formed on the surface of the deposition shield 71 with which the spiral 57 of the shutter 55 abuts at the upper end facing the shutter 55 in the opening 71 a of the deposition shield 71. , And attached so as to extend along the upper end. The member 76 is attached to the deposition shield 71 by pressing one of the pins 75 made of, for example, aluminum into the deposition shield 71 and pressing into the other member 76 of the pin 75. Note that a recess along the outer shape of the spiral 57 may be provided on the surface of the member 76 that contacts the spiral 57 of the shutter 55. The contact mechanism may include a groove provided in the upper portion of the shutter 55, a spiral 57 fitted in the groove, and a member 76 attached to the lower surface of the deposition shield 71.

  Also in the fourth modification, the Hastelloy spiral 57 provided on the shutter 55 and the Hastelloy member 76 provided on the deposition shield 71 are in contact with each other when the shutter 55 closes the opening 71 a of the deposition shield 71. Even when the plasma processing is performed, the electrical connection between the shutter 55 and the deposition shield 71 is maintained, and the occurrence of an EPD error is suppressed.

(Modification 5)
Next, a fifth modification of the configuration of the shutter 55 and the deposit shield 71 will be described. FIG. 19 is an enlarged view showing an example of the configuration around the upper portion of the shutter in the fifth modification.

  In the fifth modification, a spiral 57 made of hastelloy is disposed at the upper end of the shutter 55, for example, as shown in FIG. For example, as shown in FIG. 19, a member 77 made of hastelloy is formed on the surface of the deposition shield 71 with which the spiral 57 of the shutter 55 abuts at the upper end facing the shutter 55 in the opening 71 a of the deposition shield 71. , And attached so as to extend along the upper end. The member 77 is attached to the deposit shield 71 by being press-fitted into the deposit shield 71, for example. A recess along the outer shape of the spiral 57 may be provided on the surface of the member 77 that contacts the spiral 57 of the shutter 55. The contact mechanism may include a groove provided in the upper portion of the shutter 55, a spiral 57 fitted in the groove, and a member 77 press-fitted into the lower surface of the deposition shield 71.

  Also in the fifth modification example, the Hastelloy spiral 57 provided on the shutter 55 and the Hastelloy member 77 provided on the deposition shield 71 come into contact with each other when the shutter 55 closes the opening 71 a of the deposition shield 71. Even when the plasma processing is performed, the electrical connection between the shutter 55 and the deposition shield 71 is maintained, and the occurrence of an EPD error is suppressed.

(Modification 6)
Next, Modification 6 of the configuration of the shutter 55 and the deposit shield 71 will be described. FIG. 20 is an enlarged view showing an example of the configuration around the upper part of the shutter in the sixth modification.

  In the sixth modification, a spiral 57 made of hastelloy is disposed at the upper end of the shutter 55, for example, as shown in FIG. For example, as shown in FIG. 20, a member 78 made of hastelloy is formed on the surface of the deposition shield 71 with which the spiral 57 of the shutter 55 abuts at the upper end facing the shutter 55 in the opening 71 a of the deposition shield 71. , And attached so as to extend along the upper end. The member 78 is fixed to the deposition shield 71 with screws 79 from above with the deposition shield 71 interposed therebetween, for example. The head of the screw 79 is covered with a cap 80. Note that a recess along the outer shape of the spiral 57 may be provided on the surface of the member 78 that contacts the spiral 57 of the shutter 55. The contact mechanism may include a groove provided in the upper part of the shutter 55, a spiral 57 fitted in the groove, and a member 78 attached to the lower surface of the deposition shield 71.

  Also in the modified example 6, the Hastelloy spiral 57 provided on the shutter 55 and the Hastelloy member 78 provided on the deposition shield 71 are in contact with each other when the shutter 55 closes the opening 71 a of the deposition shield 71. Even when the plasma processing is performed, the electrical connection between the shutter 55 and the deposition shield 71 is maintained, and the occurrence of an EPD error is suppressed.

(Modification 7)
Next, a modified example 7 of the configuration of the shutter 55 and the deposit shield 71 will be described. FIG. 21 is an enlarged view showing an example of the configuration around the upper part of the shutter in Modification 7.

  In the modified example 7, a spiral 57 made of hastelloy is disposed at the upper end of the shutter 55, for example, as shown in FIG. For example, as shown in FIG. 21, a member 82 having a substantially L-shaped cross section formed of hastelloy is formed on the surface of the deposition shield 71 with which the spiral 57 of the shutter 55 abuts at the opening 71 a of the deposition shield 71. It is attached to the upper end facing the shutter 55 so as to extend along the upper end. The member 82 is fixed to the deposit shield 71 by a plurality of screws 81 inserted from below. Note that a recess along the outer shape of the spiral 57 may be provided on the surface of the member 82 that contacts the spiral 57 of the shutter 55. Further, in a state where the Hastelloy member 81 is fixed to the deposition shield 71 with the screw 81, the head of the screw 81 may be buried above the lower surface of the Hastelloy member 81. The contact mechanism may include a groove provided in the upper portion of the shutter 55, a spiral 57 fitted in the groove, and a member 82 attached to the lower surface of the deposition shield 71.

  Also in the modified example 7, when the shutter 55 closes the opening 71 a of the deposition shield 71, the Hastelloy spiral 57 provided on the shutter 55 and the Hastelloy member 82 provided on the deposition shield 71 come into contact with each other. Even when the plasma processing is performed, the electrical connection between the shutter 55 and the deposition shield 71 is maintained, and the occurrence of an EPD error is suppressed.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above-described embodiment. In addition, it is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Plasma processing apparatus 10 Chamber 51 Opening part 55 Shutter 57 Spiral 71 Depot shield 71a Opening part 71b Layer

Claims (13)

A cylindrical chamber having a first opening for loading a substrate to be processed;
A protective member disposed along the inner wall of the chamber and having a second opening at a position corresponding to the first opening;
An opening and closing member that is formed in a plate shape and opens and closes the second opening,
The inner edge of the second opening of the protective member is provided with a first member formed of Hastelloy (registered trademark) ,
A second member made of hastelloy is provided on the outer edge of the opening / closing member,
The substrate processing apparatus, wherein the first member and the second member abut on each other in a state in which the opening / closing member closes the second opening. The first member is a layer formed of Hastelloy, or is one of a resilient member formed of Hastelloy,
The second member is a substrate processing apparatus according to claim 1, wherein the layer formed of Hastelloy, or is any other elastic members formed of Hastelloy. Layers made of hastelloy
3. The substrate processing apparatus according to claim 2, wherein the substrate processing apparatus is formed by fixing a member formed of hastelloy to an inner edge of the second opening of the protection member or an outer edge of the opening / closing member. . The first member is an elastic member made of hastelloy ,
4. The substrate processing apparatus according to claim 1, wherein the second member has a U-shaped cross section by Hastelloy and is screwed to an upper end of the opening / closing member. 5. . The first member is
It is formed in a spiral shape by Hastelloy and is arranged at the upper end so that the central axis is along the upper end of the second opening of the protective member,
The second member is
5. A recess along the outer shape of the first member is formed on a surface of the opening / closing member that contacts the first member in a state where the second opening is closed. 2. The substrate processing apparatus according to 1. A shutter mechanism for blocking an opening for carrying a substrate into a space in a plasma processing apparatus,
A first member that partitions the space in which plasma is generated;
A shielding member that shields the opening so that the plasma does not diffuse outward from the space;
A contact mechanism for contacting the first member and the shielding member when the shielding member shields the opening;
The contact mechanism is
A groove formed in one of the first member or the shielding member;
An elastic member formed of Hastelloy and fitted into the groove;
Formed of hastelloy , provided on the other of the first member or the shielding member, and when the shielding member shields the opening, the first member and the shielding member are in contact with the elastic member And a second member for conducting the shutter. The first member and the shielding member are formed in a curved shape,
The shutter mechanism according to claim 6, wherein the contact mechanism is configured along the curve. The second member is
The cross-section is formed in a substantially U-shape, and the shielding member in a state of shielding the opening is provided on the back side of the surface facing the space side, and the upper surface is in contact with the elastic member. The shutter mechanism according to 6 or 7. The second member is
8. The shutter mechanism according to claim 6, wherein a cross-section is formed in an approximately L shape and is provided on the first member, and a lower surface abuts on the elastic member in a state where the shielding member shields the opening. . A chamber having a space in the plasma processing apparatus, and a chamber into which the substrate is carried in the space;
A first member that partitions the space in which plasma is generated along a sidewall in the chamber;
A shielding member that shields an opening provided in the first member so that the plasma does not diffuse outward from the space;
A contact mechanism for contacting the first member and the shielding member when the shielding member shields the opening;
The contact mechanism is
A groove formed in one of the first member or the shielding member;
An elastic member formed of Hastelloy and fitted into the groove;
Formed of hastelloy , provided on the other of the first member or the shielding member, and when the shielding member shields the opening, the first member and the shielding member are in contact with the elastic member And a second member for conducting the plasma. The first member and the shielding member are formed in a curved shape,
The plasma processing apparatus according to claim 10, wherein the contact mechanism is configured along the curve. The second member is
The cross-section is formed in a substantially U-shape, and the shielding member in a state of shielding the opening is provided on the back side of the surface facing the space side, and the upper surface is in contact with the elastic member. The plasma processing apparatus according to 10 or 11. The second member is
The plasma processing according to claim 10 or 11, wherein a cross-section is formed in a substantially L shape and is provided on the first member, and the lower surface is in contact with the elastic member in a state where the shielding member shields the opening. apparatus.