JP4547119B2

JP4547119B2 - Vacuum processing equipment

Info

Publication number: JP4547119B2
Application number: JP2001502151A
Authority: JP
Inventors: 潤廣瀬; 潤小澤; 智也大久保; 達哉藤
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 1999-06-02
Filing date: 2000-06-02
Publication date: 2010-09-22
Anticipated expiration: 2020-06-02
Also published as: KR20020010681A; WO2000075972A1; KR100682216B1

Description

技術分野
本発明は、プラズマを用いた半導体製造技術により、被処理基板に対して成膜若しくはエッチング等を施す真空処理装置に関する。
背景技術
一般に、排気系により排気されて真空状態となる処理チャンバー内に被処理基板となる、例えば液晶用ガラス基板や半導体ウエハを配置して、それらの基板表面にプラズマを用いて、薄膜を成模するＣＶＤ（ｃｈｅｍｉｃａｌｖａｐｏｒｄｅｐｏｓｉｔｉｏｎ）装置や選択的なエッチングを行うＲＩＥ（ｒｅａｃｔｉｖｅｉｏｎｅｔｃｈｉｎｇ）装置等のプラズマ処理装置が知られている。
図１０は、従来のプラズマ処理装置の概略的構成を示す。
このプラズマ処理装置１において、図示しない排気系により真空引きされる筒状の処理チャンバー２を備え、その内部には、ボールねじ等の駆動軸３によって支持されたステージ４が設けられている。このステージ４上は被処理基板（液晶用ガラス基板や半導体ウエハ等）５が載置されるように平坦になっている。また、ステージ４の下部と真空処理チャンバー２の底部との間には駆動軸３を囲み気密となるようにベローズ６が設けられ、このベローズ６の内部は外部に通じて大気圧となっている。
さらに、処理チャンバー２の内周壁の略中央には図示しないゲートバルブにより開閉可能な搬送口７が設けられており、外部から図示しない搬送アームに持たれた被処理基板が搬入され、ステージ４上に載置され、又は処理が施された被処理基板が搬出される。
従って、搬送口７の部分は処理チャンバー内周壁面からみると凹部となっており、この状態でプラズマを発生させると、プラズマ密度の均一性が乱れることとなる。例えば、ＣＶＤ装置に適用すれば、被処理基板に堆積する膜厚の分布が不均一になる等の問題が発生する。
そこで、前述したような上下移動可能なステージ４を備えて、被処理体の搬入搬出時には、図１０の２点鎖線で示すように搬送口７より若干下方に移動させて、搬送アームによる被処理基板５とのやり取りを行い、載置された後ステージ４を上昇させて、搬送口７の凹部が発生するプラズマに掛からないようにしている。
前述したような上下移動可能なステージ４を備えるプラズマ処理装置は、上下移動させるスペースが処理チャンバー内に必要となり、処理チャンバー２の高さ寸法を大きくとる必要がある。このため処理装置全体では大型化になるという問題に繋がる。
さらに、ステージ４を上下移動させるために処理チャンバー２の内周壁との間に移動マージンとなる隙間８を設けているため、プラズマが発生した際に、この隙間８を通じて、ステージ４の下方側に回り込み、これが原因となってプラズマ密度に乱れが発生するという問題がある。
これらの問題を解消するために、例えば、特開明６３−２７５１１７号公報に開示されるプラズマ処理装置では、チャンバー内のプラズマ引出し口から被処理基板までの空間を取り囲むように複数の磁性体を配置し、これらの磁性体をプラズマ流に垂直な方向に磁力線を形成することによりプラズマ流の径を制御するようにしている。
これによりプラズマの拡散を抑制してプラズマ密度の均一化を図り、大口径の被処理基板においても均一なプラズマ処理を実現している。しかしこの技術においても、複数の磁性体によりプラズマ流に垂直な方向に磁界を発生させるために、それぞれに独立したモータとその駆動装置が必要であるため、構造的に複雑になってしまうという問題がある。
発明の開示
本発明は、プラズマの発生時に、そのプラズマが被処理基板を搬入・搬出する搬送口へ廻り込むのを防止し、プラズマの乱れをなくして均一なプラズマ処理ができ、しかも構造的に簡単で装置の小型化を図ることが可能な真空処理装置を提供することを目的とする。
本発明は、前記目的を達成するために、被処理基板を載置するステージを有する真空処理チャンバーと、この真空処理チャンバーを形成する周壁に設けられ、前記ステージに対して被処理基板を搬入・搬出する搬送口とからなり、前記真空処理チャンバー内でプラズマを発生させ、前記ステージ上の被処理基板をプラズマ処理する真空処理装置において、前記真空処理チャンバー内でプラズマを発生する際に、前記搬送口を閉塞してプラズマの乱れを防止するシャッタを設けた真空処理装置を提供する。
また前記シャッタは、前記真空処理チャンバーの内周壁に沿う筒体であり、真空処理チャンバー内でプラズマを発生する際に、シャッタ駆動機構によって上昇して前記搬送口を閉塞する。前記シャッタは、前記真空処理チャンバーの内周壁に沿う板状体であり、前記真空処理チャンバー内でプラズマを発生する際に、シャッタ駆動機構によって上昇して前記搬送口を閉塞する。
さらに、前記シャッタ駆動機構は、大気側に設置されたエアシリンダと、このエアシリンダによって昇降し、前記シャッタを昇降する駆動軸とからなる。
以上のように構成された真空処理装置は、プラズマ発生時に、エアシリンダによってシャッタを上昇させ、真空処理チャンバーへ被処理基板を搬入・搬出する搬送口をシャッタによって閉塞して真空処理チャンバーの内周壁に凹凸をなくすことにより、プラズマの乱れをなくして均一な．プラズマ処理ができる。
発明を実施するための最良の形態
以下、本発明による実施形態について詳細に説明する。
図１乃至図３は第１の実施形態を示し、図１は真空処理装置の縦断正面図、図２はシャッタ駆動装置の正面図、図３はシャッタの斜視図である。
図１に示すように、真空処理装置の本体を構成する処理チャンバー１１は、例えばアルミニウム等の導電性材料により形成され、その内部はリング状の仕切り壁１３によって上下に仕切られ、上方が真空処理室１４として、下方が大気室１５として設けられている。
この仕切り壁１３の中央にはステージ１６が設けられる。このステージ１６の上面には、セラミック又は石英等による絶縁部材が配置され、液晶用ガラス基板若しくは、半導体ウエハ等の被処理基板１７を載置する載置面１６ａとなっている。
ステージ１６は、例えば表面がアルマイト処理（陽極酸化処理）されたアルミニウム等からなり、その内部にはセラミックヒータ等の加熱部位や冷媒流路等の温度制御機構及び温度センサ（いずれも図示しない）が設けられている。
また真空処理室１４を構成する処理チャンバー１１の周壁の一部には、被処理基板１７を搬送アーム（図示しない）によって載置面１６ａに搬入・搬出する搬送口１８が設けられている。この搬送口１８は処理チャンバー１１の周方向に沿って扁平矩形状に開口しているとともに、開口縁から外側に一体に突出する突出ポート１９を有している。
さらに、処理チャンバー１１の内部にはその内周壁に沿うシャッタ２０が昇降自在に設けられている。このシャッタ２０は、図２及び図３に示すように、処理チャンバー１１と同一のアルミニウム等の導電性材料からなり、両端が開口する円筒体であり、その周壁の高さ前記搬送口１８を閉塞するに十分な寸法に形成され、後述するシャッタ駆動機構２１によって昇降されるようになっている。
さらに、シャッタ２０には電気ヒータ２０ａが内蔵され、熱ロスを防止し、処理効率アップを図りつつ、また反応性生成物の付着を抑制し、メンテナンス周期を延ばす機能を有する。尚、シャッタ２０の電位は、接地されている。
次に、シャッタ駆動機構２１について説明する。
処理チャンバー１１の下部の大気室１５側にはエアシリンダ２２が取付け具２３によって鉛直方向に取付けられている。このエアシリンダ２２の昇降ロッド２４にはリング状の昇降プレート２５が水平状態に固定されている。
昇降プレート２５には複数本の駆動軸２６が鉛直方向に設けられ、これら駆動軸２６の上端には前記シャッタ２０がねじによって固定されている。駆動軸２６は仕切り壁１３を貫通するガイド孔２７に軸方向にスライド自在に設けられ、このガイド孔２７にはシール部材２８とスライドベアリング２９が設けられている。
そして、エアシリンダ２２によって昇降ロッド２４を昇降することにより、昇降プレート２５及び駆動軸２６を介してシャッタ２０が昇降し、下降位置においてはシャッタ２０によって搬送口１８が開口し、上昇位置においてはシャッタ２０によって搬送口１８が閉塞され、真空処理室１４の周壁に凹凸のないフラットな面が形成されるようになっている。また、シャッタ２０は、デポシールドとして機能する。
次に、第１の実施形態の作用について説明する。
まず、エアシリンダ２２によって昇降ロッド２４を下降し、昇降プレート２５及び駆動軸２６を介してシャッタ２０を下降させて退避させる。その後、搬送口１８を開口させる。この状態で、搬送アームによって把持された被処理基板１７が搬送口１８から真空処理室１４内に搬入され、ステージ１６の載置面１６ａに載置される。
次に、搬送口１８がゲートバルブ（図示しない）によって閉塞された後、真空処理室１４を排気して真空状態とする。なお、真空処理室１４内は予め真空であってもよい。真空処理室１４が所定の真空度になった後、真空処理室１４にプロセスガスを導入する。これと同時に、エアシリンダ２２を駆動させて、昇降ロッド２４を上昇させると、昇降プレート２５及び駆動軸２６を介してシャッタ２０が上昇して搬送口１８を閉塞する。これにより、真空処理室１４の周壁に凹凸のないフラットな面が形成される。
次に、真空処理室１４内でプラズマを発生させて被処理基板１７をプラズマ処理するが、シャッタ２０がこのときプラズマ発生領域を円筒状に取り囲む。このシャッタ２０には、凹凸部分がないため、プラズマ流の偏りがなく、大口径の被処理基板１７であってもプラズマＣＶＤによる成膜を例にとれば、膜厚分布が均一になるなど、プラズマ処理の均一性が得られる。
また、ステージ１６を昇降させる必要がなく、シャッタ２０のみを真空処理室１４内で昇降させればよいので、真空処理室１４の高さ寸法を小さくでき、装置の小型化、省エネ化、低コスト化を図ることができる。
次に、本発明による第２の実施形態に係る真空処理装置について説明する。
図４は真空処理室１４を構成する処理チャンバー１１の横断平面図、図５はシャッタ駆動装置の斜視図である。本実施形態の構成部位において、前述した第１の実施形態と同一構成部位には同じ参照符号をふして、その詳細な説明は省略する。
この真空処理装置の処理チャンバー１１の周壁の一部には、搬送口３０が周方向に沿って扁平矩形状に開口しているとともに、搬送口３０は、その下端手開口部３０ａが設けられている。
さらに、真空処理室１４の内部には搬送口３０を気密になるように開閉するゲート３１が昇降自在に設けられている。このゲート３１は、処理チャンバー１１と同一のアルミニウム等の導電性材料からなり、搬送口３０の開口部分を塞ぐ寸法からなる矩形板状体で、処理チャンバー１１の周壁と同一の曲率に湾曲している。
このゲート３１は、処理チャンバー１１の下部の大気室１５側に設けられるエアシリンダ２２の昇降ロッド２４に連結され、昇降するようになっている。そして、昇降ロッド２４の下降位置においてはゲート３１が下がって搬送口３０が開口しされ、上昇位置においてはゲート３１が搬送口３０を気密になるように閉塞する。これにより、真空処理室１４の周壁面に凹凸がなくなる。
本実施形態によれば、搬送口３０を開閉するゲート３１のみを昇降駆動すれぱよく、前述したシャッタと同様に、真空処理室１４の周壁面に凹凸を無くし、且つゲート３１を小型軽量に形成することができ、エアシリンダ２２の小型化を図ることができる。
次に本発明による第３の実施形態に係る真空処理装置について説明する。
図６には、本実施形態の真空処理装置の縦断正面図を示す。
この真空処理装置の本体を構成する処理チャンバー４１は、アルミニウム等の導電性材料により形成され、その内部はリング状の仕切り壁４２によって上下に仕切られ、上方が真空処理室４３として、下方が大気室４４として設けられている。
この仕切り壁４２の中央にはステージ４５が設けられる。このステージ４５の上面には、セラミック又は石英等による絶縁部材が配置され、液晶用ガラス基板若しくは、半導体ウエハ等の被処理基板４６を載置する載置面４５ａとなっている。また、ステージ４５の周囲には、円盤状の排気プレート５６を設けている。ステージ４５は、例えば表面がアルマイト処理（陽極酸化処理）されたアルミニウム等からなり、その内部にはセラミックヒータ等の加熱部位４７や、冷媒流路等の温度制御機構及び温度センサ（図示せず）が設けられている。
また真空処理室４３内の周壁の一部には、被処理基板４６を搬送アーム（図示しない）によって載置面４５ａに搬入・搬出する搬送口４７が設けられている。この搬送口４７の大気側には開閉するゲートバルブ４８が設けられている。このゲートバルブ４８は、図示しないエアシリンダ等により駆動し、閉じた場合には、真空処理室４３内を気密にする。
また、処理チャンバー４１の天井板５４内には、ガス導入系を含む上部電極５５が設けられている。さらに、真空処理室４３内には、図７に示すような昇降可能なシャッタ４９及び固定されるデポシールド５０が設けられている。
このデポシールド５０は、アルミニウム等の導電性材料からなり、両端が開口する円筒体であり、図６に示すように真空処理室４３内ではスペーサ５３を介在して固定されている。デポシールド５０は、接地されており、処理チャンバーと同電位のＧＮＤ電位である。また、デポシールド５０は、一部に切り欠き部分を有しており、この切り欠き部分に上昇したシャッタ４９が合致する。
また、シャッタ４９及びデポシールド５０には共に電気ヒータ（図示せず）が内蔵され、真空処理室４３内の熱損失を防止して処理効率アップを図りつつ、また反応性生成物の付着を抑制し、メンテナンス周期を延ばす機能を有する。
このシャッタ４９は、処理チャンバー４１の下部の大気室４４側から磁性流体シールなどを用いて気密に導入される駆動軸５１の一端に連結される。さらに、この駆動軸５１の他端は、エアシリンダ５２に連結されており、エアシリンダ５２の駆動により、シャッタ４９が上下方向に昇降する。つまり、被処理基板を搬送口４７から出し入れする際には、下降して退避し、プラズマ発生時には上昇させてデポシールド５０の切り欠き部分に合致させて凹凸のない曲面を形成している。
前述した第２の実施形態においては、上昇したシャッタ３１が処理チャンバー１１の周壁との段差を無くして同一の周面を形成する場合には、シャッタ３１が処理チャンバー１１になるべく近づいた状態が好ましいが、上昇時に当接すると、その箇所が擦れてパーティクルを発生させるおそれがある。しかし、隙間をあけると電気的な繋がりが無くなり、プラズマを用いた処理装置においては、そのプラズマに晒されるため、シャッタ３１が処理チャンバー１１とは異なった電位となる場合がある。
そこで、図７におけるＡ−Ａ断面となる図８Ａに示すように、デポシールド５０とシャッタ４９を電気的に接続するためのステンレス等の金属からなるスパイラルシール６１を用いる。つまり、シャッタ４９の端面に、スパイラルシール６１の一部が出るように収納する溝を形成し、さらに並行してＯリングを同様に収納する溝を形成して、それぞれを収納する。この時、スパイラルシール用溝は処理チャンバー４１側に、Ｏリング用溝は真空室４６側に形成する。また、スパイラルシール用溝の内面６４と、スパイラルシール６１が当接するデポシールド５０の接触面６３のアルマイト６５は除去して、電気的な接続ができる状態にする。
そして、図８Ｂに示すように、駆動軸５１により上昇したシャッタ４９がデポシールド５０に当接する際に、スパイラルシール６１がデポシールド５０の接触面６３に接触する際に、金属粉即ちパーティクルが発生した場合でも、Ｏリング６２により真空処理室４３側にパーティクルが入り込むことを防止できる。また、Ｏリングは、デポシールド５０に当接する際の衝撃を吸収するように作用する。
また、シャッタ４９が上昇した際に、排気プレート５６に接触して電気的に接続させるためのスパイラルシール６６を同様に設けてもよい。
次に、第３の実施形態の変形例を図９に示し説明する。
この変形例は、シャッタ４９とデポシールド５０との当接する端面の形状が異なっており、Ｏリングを用いずに実現した例である。
図９に示すように、それぞれの端面を噛み合うようにＬ字形に形成する。この時、処理チャンバー４１側が真空処理室４３側よりも高くなる、つまり外周側が凸形になるようにする。
この変形例においても、シャッタ４９の凸形端面上には、前述したと同様なスパイラルシール用溝を形成して、スパイラルシール７２をはめ込み、シャッタ７１を上昇させた場合に、デポシールド７０に当接させて、電気的な接続を図る。この時、当接部分がＬ字形型となっているため、デポシールド７０へスパイラルシール７２が接した際に、パーティクルが発生しても、Ｌ字形部分で遮られるため、被処理基板４６までそのパーティクルが到達せずにすむ。これにより、真空処理室１４の周壁に凹凸のないフラットな面が形成される。尚、本実施形態では、Ｏリングを用いたが、他にもテフロン等で弾性を発生させる形状例えば、Ｕ字溝形状に成形して用いることもできる。
以上説明したように、この発明によれば、真空処理室へ被処理基板を搬入・搬出する搬送口をシャッタによって閉塞して真空処理室の内周壁に凹凸をなくすことにより、プラズマの発生時に、プラズマの乱れをなくして均一なプラズマ処理ができるという効果がある。また、被処理基板を載置する載置台を昇降させる必要がなく、構造的に簡単で、装置の小型化を図ることができるという効果がある。
さらに、電気的にデポシールドとシャッタと排気プレートが同電位（例えば接地電位）となるため、電気的なプラズマの乱れも無くして、さらに均一なプラズマ処理ができる。
産業上の利用可能性
本発明の真空処理室の内周壁から凹凸をなくすことにより、プラズマの発生時に、プラズマの乱れをなくして均一なプラズマ処理ができる真空処理装置を提供することにある。
本発明の真空処理装置は、プラズマを用いてステージに載置された被処理基板に所定処理を施す真空処理室を備え、その真空処理室内の周壁を覆い、且つ上下移動するシャッタが配置される。このシャッタは、搬送口を介してステージとの被処理基板の受け渡しの際に、その全体を退避させ、またプラズマ処理の際には、プラズマ発生領域を取り囲む様に設置され、真空処理室内の凹凸を無くし、デポシールドとして機能する。また、ステージ外周で真空処理室内の周壁を覆うようにデポシールドが固定され、搬送口をカバーする切り欠き部分が設けられ、この切り欠き部分に合致する昇降可能なシャッタを設け、搬送口から被処理基板を出し入れする際には、シャッタを下降させて退避させ、プラズマ処理時には上昇させて切り欠き部分に合致させ、凹凸のない曲面を形成しつつ同じ電位になり、プラズマの乱れをなくして均一なプラズマ処理を行う真空処理装置である。
【図面の簡単な説明】
図１は、本発明による第１の実施形態に係る真空処理装置の縦断面構造を示す図である。
図２は、第１の実施形態のシャッタ駆動装置の正面図である。
図３は、第１の実施形態のシャッタの斜視図示す図である。
図４は、第２の実施形態を示す処理チャンバーの断面構造を示す図である。
図５は、第２の実施形態のシャッタ駆動装置の斜視図である。
図６は、第３の実施形態に係る真空処理装置の縦断面構造を示す図である。
図７は、第３の実施形態のシャッタ駆動装置の斜視図である。
図８Ａ及び８Ｂは、第３の実施形態のシャッタ駆動装置の断面構造を示す図である。
図９は、第３の実施形態の変形例のシャッタ駆動装置の断面構造を示す図である。
図１０は、従来の真空処理装置の縦断面構造を示す図である。TECHNICAL FIELD The present invention relates to a vacuum processing apparatus that performs film formation or etching on a substrate to be processed by a semiconductor manufacturing technique using plasma.
Background Art In general, a glass substrate for a liquid crystal or a semiconductor wafer to be processed is placed in a processing chamber that is evacuated by an exhaust system to be in a vacuum state, and a thin film is formed using plasma on the surface of the substrate. Plasma processing apparatuses such as a simulated CVD (chemical vapor deposition) apparatus and an RIE (reactive ion etching) apparatus that performs selective etching are known.
FIG. 10 shows a schematic configuration of a conventional plasma processing apparatus.
The plasma processing apparatus 1 includes a cylindrical processing chamber 2 that is evacuated by an exhaust system (not shown), and a stage 4 supported by a drive shaft 3 such as a ball screw is provided therein. The stage 4 is flat so that a substrate 5 (a glass substrate for liquid crystal or a semiconductor wafer) 5 is placed thereon. Further, a bellows 6 is provided between the lower portion of the stage 4 and the bottom of the vacuum processing chamber 2 so as to surround the drive shaft 3 so as to be airtight, and the inside of the bellows 6 communicates with the outside and is at atmospheric pressure. .
Further, a transfer port 7 that can be opened and closed by a gate valve (not shown) is provided at the approximate center of the inner peripheral wall of the processing chamber 2, and a substrate to be processed held by a transfer arm (not shown) is carried in from the outside. The substrate to be processed that has been placed on or processed has been unloaded.
Therefore, the portion of the transfer port 7 is a concave portion when viewed from the inner peripheral wall surface of the processing chamber, and if plasma is generated in this state, the uniformity of the plasma density will be disturbed. For example, when applied to a CVD apparatus, problems such as non-uniform distribution of film thickness deposited on the substrate to be processed occur.
Therefore, the stage 4 that can be moved up and down as described above is provided, and when the object to be processed is loaded and unloaded, it is moved slightly below the transfer port 7 as shown by a two-dot chain line in FIG. The stage 4 is raised after being exchanged with the substrate 5 so that the concave portion of the transfer port 7 is not exposed to the generated plasma.
The plasma processing apparatus including the stage 4 that can be moved up and down as described above requires a space for the vertical movement in the processing chamber, and the processing chamber 2 needs to have a large height. For this reason, it leads to the problem that the whole processing apparatus becomes large.
Further, since a gap 8 serving as a movement margin is provided between the stage 4 and the inner peripheral wall of the processing chamber 2 in order to move the stage 4 up and down, when plasma is generated, the stage 4 passes through the gap 8 to the lower side of the stage 4. There is a problem that the plasma density is disturbed due to the wraparound.
In order to solve these problems, for example, in the plasma processing apparatus disclosed in Japanese Patent Application Laid-Open No. 63-275117, a plurality of magnetic bodies are arranged so as to surround the space from the plasma outlet in the chamber to the substrate to be processed. The diameter of the plasma flow is controlled by forming magnetic lines of force in the direction perpendicular to the plasma flow.
As a result, plasma diffusion is suppressed to make the plasma density uniform, and uniform plasma processing is realized even on a substrate having a large diameter. However, even in this technique, in order to generate a magnetic field in a direction perpendicular to the plasma flow by a plurality of magnetic bodies, an independent motor and its driving device are necessary for each, so that the structure becomes complicated. There is.
DISCLOSURE OF THE INVENTION The present invention prevents the plasma from flowing into a transfer port for carrying in / out the substrate to be processed when plasma is generated, and can perform uniform plasma treatment without disturbing the plasma and structurally. An object of the present invention is to provide a vacuum processing apparatus that is simple and can be downsized.
In order to achieve the above object, the present invention is provided in a vacuum processing chamber having a stage on which a substrate to be processed is placed, and a peripheral wall forming the vacuum processing chamber. In a vacuum processing apparatus that includes a transport port for carrying out, generates plasma in the vacuum processing chamber, and plasma-processes a substrate to be processed on the stage, the transport is performed when the plasma is generated in the vacuum processing chamber. Provided is a vacuum processing apparatus provided with a shutter for closing a mouth and preventing plasma disturbance.
The shutter is a cylindrical body along the inner peripheral wall of the vacuum processing chamber. When plasma is generated in the vacuum processing chamber, the shutter is raised by a shutter driving mechanism to close the transfer port. The shutter is a plate-like body along the inner peripheral wall of the vacuum processing chamber, and when the plasma is generated in the vacuum processing chamber, the shutter is raised by a shutter driving mechanism to close the transfer port.
Further, the shutter drive mechanism includes an air cylinder installed on the atmosphere side, and a drive shaft that moves up and down by the air cylinder and moves up and down the shutter.
In the vacuum processing apparatus configured as described above, when plasma is generated, the shutter is lifted by the air cylinder, and the transfer port for loading / unloading the substrate to / from the vacuum processing chamber is closed by the shutter, and the inner peripheral wall of the vacuum processing chamber By eliminating the irregularities on the surface, the plasma is turbulent and uniform. Plasma treatment is possible.
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments according to the present invention will be described in detail.
1 to 3 show a first embodiment, FIG. 1 is a longitudinal front view of a vacuum processing apparatus, FIG. 2 is a front view of a shutter driving device, and FIG. 3 is a perspective view of the shutter.
As shown in FIG. 1, a processing chamber 11 constituting a main body of a vacuum processing apparatus is formed of, for example, a conductive material such as aluminum, and the inside thereof is divided up and down by a ring-shaped partition wall 13, and the upper portion is vacuum processed. A lower portion of the chamber 14 is provided as an atmospheric chamber 15.
A stage 16 is provided at the center of the partition wall 13. An insulating member made of ceramic, quartz, or the like is disposed on the upper surface of the stage 16, and serves as a mounting surface 16a for mounting a substrate 17 to be processed such as a liquid crystal glass substrate or a semiconductor wafer.
The stage 16 is made of, for example, aluminum whose surface is anodized (anodized) or the like, and a heating part such as a ceramic heater, a temperature control mechanism such as a refrigerant flow path, and a temperature sensor (none of which are shown) are included therein. Is provided.
Further, a part of the peripheral wall of the processing chamber 11 constituting the vacuum processing chamber 14 is provided with a transfer port 18 for carrying the substrate 17 to be carried in and out of the mounting surface 16a by a transfer arm (not shown). The transfer port 18 is open in a flat rectangular shape along the circumferential direction of the processing chamber 11, and has a protruding port 19 that integrally protrudes outward from the opening edge.
Further, a shutter 20 along the inner peripheral wall is provided in the processing chamber 11 so as to be movable up and down. As shown in FIGS. 2 and 3, the shutter 20 is made of the same conductive material such as aluminum as the processing chamber 11 and is a cylindrical body having both ends opened, and the height of the peripheral wall of the shutter 20 closes the conveying port 18. It is formed to have a sufficient size and is moved up and down by a shutter drive mechanism 21 described later.
Further, the shutter 20 has a built-in electric heater 20a, which has a function of preventing heat loss and increasing the processing efficiency, suppressing the adhesion of reactive products, and extending the maintenance cycle. The potential of the shutter 20 is grounded.
Next, the shutter drive mechanism 21 will be described.
An air cylinder 22 is attached to the lower side of the processing chamber 11 in the vertical direction by a fixture 23 on the side of the atmospheric chamber 15. A ring-shaped lifting plate 25 is fixed to the lifting rod 24 of the air cylinder 22 in a horizontal state.
The elevating plate 25 is provided with a plurality of drive shafts 26 in the vertical direction, and the shutter 20 is fixed to the upper ends of the drive shafts 26 with screws. The drive shaft 26 is provided in a guide hole 27 penetrating the partition wall 13 so as to be slidable in the axial direction. A seal member 28 and a slide bearing 29 are provided in the guide hole 27.
The air cylinder 22 raises and lowers the elevating rod 24 to raise and lower the shutter 20 via the elevating plate 25 and the drive shaft 26. The transport port 18 is opened by the shutter 20 at the lowered position, and the shutter at the raised position. The transfer port 18 is closed by 20 so that a flat surface without unevenness is formed on the peripheral wall of the vacuum processing chamber 14. The shutter 20 functions as a deposit shield.
Next, the operation of the first embodiment will be described.
First, the lifting rod 24 is lowered by the air cylinder 22, and the shutter 20 is lowered and retracted via the lifting plate 25 and the drive shaft 26. Thereafter, the transport port 18 is opened. In this state, the substrate to be processed 17 held by the transfer arm is carried into the vacuum processing chamber 14 from the transfer port 18 and placed on the placement surface 16 a of the stage 16.
Next, after the transfer port 18 is closed by a gate valve (not shown), the vacuum processing chamber 14 is evacuated to a vacuum state. Note that the inside of the vacuum processing chamber 14 may be in a vacuum. After the vacuum processing chamber 14 reaches a predetermined degree of vacuum, a process gas is introduced into the vacuum processing chamber 14. At the same time, when the air cylinder 22 is driven to raise the elevating rod 24, the shutter 20 rises via the elevating plate 25 and the drive shaft 26 and closes the conveying port 18. Thereby, a flat surface without unevenness is formed on the peripheral wall of the vacuum processing chamber 14.
Next, plasma is generated in the vacuum processing chamber 14 to process the substrate 17 to be processed, and the shutter 20 surrounds the plasma generation region in a cylindrical shape at this time. Since the shutter 20 has no uneven portion, there is no bias of the plasma flow, and even if the substrate 17 to be processed has a large diameter, if film formation by plasma CVD is taken as an example, the film thickness distribution becomes uniform. Uniformity of plasma processing is obtained.
Further, since it is not necessary to raise and lower the stage 16 and only the shutter 20 needs to be raised and lowered in the vacuum processing chamber 14, the height dimension of the vacuum processing chamber 14 can be reduced, and the apparatus can be reduced in size, energy saving, and low cost. Can be achieved.
Next, a vacuum processing apparatus according to the second embodiment of the present invention will be described.
4 is a cross-sectional plan view of the processing chamber 11 constituting the vacuum processing chamber 14, and FIG. 5 is a perspective view of the shutter driving device. In the constituent parts of this embodiment, the same constituent parts as those in the first embodiment described above are denoted by the same reference numerals, and detailed description thereof is omitted.
A conveyance port 30 is opened in a flat rectangular shape along the circumferential direction in a part of the peripheral wall of the processing chamber 11 of the vacuum processing apparatus, and the conveyance port 30 is provided with a lower end hand opening 30a. Yes.
Further, a gate 31 that opens and closes the transfer port 30 to be airtight is provided in the vacuum processing chamber 14 so as to be movable up and down. The gate 31 is made of the same conductive material such as aluminum as the processing chamber 11 and is a rectangular plate having a size that closes the opening of the transfer port 30, and is curved to the same curvature as the peripheral wall of the processing chamber 11. Yes.
The gate 31 is connected to an elevating rod 24 of an air cylinder 22 provided on the air chamber 15 side below the processing chamber 11 so as to elevate and lower. At the lowered position of the lifting rod 24, the gate 31 is lowered and the transfer port 30 is opened, and at the raised position, the gate 31 closes the transfer port 30 so as to be airtight. Thereby, there is no unevenness on the peripheral wall surface of the vacuum processing chamber 14.
According to the present embodiment, only the gate 31 that opens and closes the transport port 30 can be driven up and down, and as in the case of the shutter described above, the peripheral wall surface of the vacuum processing chamber 14 is eliminated, and the gate 31 is formed small and light. The air cylinder 22 can be downsized.
Next, a vacuum processing apparatus according to a third embodiment of the present invention will be described.
In FIG. 6, the longitudinal front view of the vacuum processing apparatus of this embodiment is shown.
The processing chamber 41 constituting the main body of the vacuum processing apparatus is formed of a conductive material such as aluminum, and the inside thereof is partitioned vertically by a ring-shaped partition wall 42, the upper portion being a vacuum processing chamber 43, and the lower portion being atmospheric. A chamber 44 is provided.
A stage 45 is provided at the center of the partition wall 42. An insulating member made of ceramic or quartz is disposed on the upper surface of the stage 45, and serves as a mounting surface 45a on which a substrate to be processed 46 such as a glass substrate for liquid crystal or a semiconductor wafer is mounted. A disc-shaped exhaust plate 56 is provided around the stage 45. The stage 45 is made of, for example, aluminum whose surface is anodized (anodized) or the like, and has a heating part 47 such as a ceramic heater, a temperature control mechanism such as a refrigerant flow path, and a temperature sensor (not shown). Is provided.
A part of the peripheral wall in the vacuum processing chamber 43 is provided with a transfer port 47 through which the substrate to be processed 46 is carried into and out of the mounting surface 45a by a transfer arm (not shown). A gate valve 48 that opens and closes is provided on the atmosphere side of the transfer port 47. The gate valve 48 is driven by an air cylinder (not shown) or the like and, when closed, makes the inside of the vacuum processing chamber 43 airtight.
An upper electrode 55 including a gas introduction system is provided in the ceiling plate 54 of the processing chamber 41. Further, in the vacuum processing chamber 43, there are provided a shutter 49 which can be moved up and down and a fixed deposition shield 50 as shown in FIG.
The deposition shield 50 is made of a conductive material such as aluminum and is a cylindrical body having both ends open. The deposition shield 50 is fixed in the vacuum processing chamber 43 with a spacer 53 interposed therebetween as shown in FIG. The deposition shield 50 is grounded and has the same GND potential as that of the processing chamber. Further, the deposition shield 50 has a cutout part in part, and the raised shutter 49 matches the cutout part.
Further, both the shutter 49 and the deposition shield 50 incorporate an electric heater (not shown) to prevent heat loss in the vacuum processing chamber 43 and increase the processing efficiency, and also suppress the adhesion of reactive products. And has a function of extending the maintenance cycle.
The shutter 49 is connected to one end of a drive shaft 51 that is airtightly introduced using a magnetic fluid seal or the like from the atmosphere chamber 44 side below the processing chamber 41. Further, the other end of the drive shaft 51 is connected to an air cylinder 52, and the shutter 49 moves up and down by driving the air cylinder 52. That is, when the substrate to be processed is taken in and out of the transfer port 47, the substrate is lowered and retracted, and when the plasma is generated, the substrate is raised and matched with the notch portion of the deposition shield 50 to form a curved surface without unevenness.
In the second embodiment described above, when the raised shutter 31 eliminates a step from the peripheral wall of the processing chamber 11 and forms the same peripheral surface, it is preferable that the shutter 31 is as close as possible to the processing chamber 11. However, when it comes into contact when it is lifted, there is a risk that the part will rub and generate particles. However, when the gap is opened, the electrical connection is lost, and the processing apparatus using plasma is exposed to the plasma, so that the shutter 31 may have a potential different from that of the processing chamber 11.
Therefore, as shown in FIG. 8A, which is a cross section taken along the line AA in FIG. 7, a spiral seal 61 made of a metal such as stainless steel for electrically connecting the deposition shield 50 and the shutter 49 is used. That is, a groove for accommodating a part of the spiral seal 61 is formed on the end face of the shutter 49, and a groove for similarly accommodating the O-ring is formed in parallel, and each is accommodated. At this time, the spiral seal groove is formed on the processing chamber 41 side, and the O-ring groove is formed on the vacuum chamber 46 side. Further, the inner surface 64 of the spiral seal groove and the anodized layer 65 of the contact surface 63 of the deposition shield 50 with which the spiral seal 61 abuts are removed so that electrical connection is possible.
As shown in FIG. 8B, when the shutter 49 raised by the drive shaft 51 contacts the deposition shield 50, metal powder, that is, particles are generated when the spiral seal 61 contacts the contact surface 63 of the deposition shield 50. Even in this case, the O-ring 62 can prevent particles from entering the vacuum processing chamber 43 side. Further, the O-ring acts so as to absorb an impact when contacting the deposition shield 50.
Further, when the shutter 49 is raised, a spiral seal 66 for contacting and electrically connecting to the exhaust plate 56 may be similarly provided.
Next, a modification of the third embodiment will be described with reference to FIG.
This modification is an example realized without using an O-ring, since the shape of the end surface where the shutter 49 and the deposition shield 50 abut is different.
As shown in FIG. 9, it forms in L shape so that each end surface may mesh. At this time, the processing chamber 41 side is higher than the vacuum processing chamber 43 side, that is, the outer peripheral side is convex.
Also in this modified example, a spiral seal groove similar to that described above is formed on the convex end surface of the shutter 49, and when the spiral seal 72 is fitted and the shutter 71 is lifted, it contacts the deposit shield 70. To make electrical connection. At this time, since the abutting portion is L-shaped, even when particles are generated when the spiral seal 72 is in contact with the deposition shield 70, the L-shaped portion blocks the particles, so that the substrate 46 is processed. Particles do not reach. Thereby, a flat surface without unevenness is formed on the peripheral wall of the vacuum processing chamber 14. In this embodiment, an O-ring is used, but other shapes that generate elasticity with Teflon or the like, for example, a U-shaped groove shape may be used.
As described above, according to the present invention, when the plasma is generated, the transfer port for carrying the substrate into and out of the vacuum processing chamber is closed by the shutter to eliminate the irregularities on the inner peripheral wall of the vacuum processing chamber. There is an effect that uniform plasma processing can be performed without disturbing the plasma. In addition, there is no need to raise or lower the mounting table on which the substrate to be processed is mounted, and there is an effect that the structure is simple and the apparatus can be downsized.
Furthermore, since the deposition shield, the shutter, and the exhaust plate are electrically at the same potential (for example, ground potential), there is no electrical plasma disturbance and a more uniform plasma treatment can be performed.
Industrial Applicability It is an object of the present invention to provide a vacuum processing apparatus capable of performing uniform plasma processing without plasma disturbance when plasma is generated by eliminating irregularities from the inner peripheral wall of the vacuum processing chamber of the present invention.
The vacuum processing apparatus of the present invention includes a vacuum processing chamber that performs predetermined processing on a substrate to be processed that is placed on a stage using plasma, covers a peripheral wall in the vacuum processing chamber, and has a shutter that moves up and down. . The shutter is retracted when the substrate to be processed is transferred to the stage via the transfer port, and is disposed so as to surround the plasma generation region during plasma processing. To function as a deposition shield. In addition, the deposition shield is fixed so as to cover the peripheral wall in the vacuum processing chamber on the outer periphery of the stage, and a notch portion is provided to cover the transfer port. When moving the processing substrate in and out, the shutter is lowered and retracted, and during plasma processing, it is raised and matched with the notch, forming the same potential while forming a curved surface without unevenness, eliminating the plasma disturbance and uniform It is a vacuum processing apparatus that performs a plasma treatment.
[Brief description of the drawings]
FIG. 1 is a view showing a longitudinal sectional structure of a vacuum processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a front view of the shutter driving device according to the first embodiment.
FIG. 3 is a perspective view of the shutter according to the first embodiment.
FIG. 4 is a diagram showing a cross-sectional structure of a processing chamber showing the second embodiment.
FIG. 5 is a perspective view of the shutter driving device of the second embodiment.
FIG. 6 is a view showing a longitudinal sectional structure of a vacuum processing apparatus according to the third embodiment.
FIG. 7 is a perspective view of the shutter driving device of the third embodiment.
8A and 8B are diagrams illustrating a cross-sectional structure of the shutter driving device according to the third embodiment.
FIG. 9 is a diagram illustrating a cross-sectional structure of a shutter driving device according to a modification of the third embodiment.
FIG. 10 is a view showing a longitudinal sectional structure of a conventional vacuum processing apparatus.

Claims

A vacuum processing chamber having a stage on which a substrate to be processed is placed;
Provided on the peripheral wall of the vacuum processing chamber, and comprising a transfer port for carrying the substrate into and out of the stage, plasma is generated in the vacuum processing chamber, and the substrate to be processed on the stage is plasma processed In vacuum processing equipment,
It has a heating mechanism, and when the substrate to be processed is transferred to the outside with respect to the stage, it is retracted, and when plasma is generated in the vacuum processing chamber, it covers the periphery of the stage. A vacuum processing apparatus provided with a shutter that prevents plasma disturbance by surrounding the plasma generation region while being closed and closing the transfer port.

The shutter is a cylindrical body along an inner peripheral wall of the vacuum processing chamber, and when plasma is generated in the vacuum processing chamber, the shutter is raised by a shutter driving mechanism to close the transfer port. The vacuum processing apparatus according to 1.

The vacuum processing apparatus according to claim 2, wherein the shutter driving mechanism includes an air cylinder installed on the atmosphere side and a drive shaft that moves up and down by the air cylinder and moves up and down the shutter.

The shutter is a plate-like body along an inner peripheral wall of the vacuum processing chamber, and when the plasma is generated in the vacuum processing chamber, the shutter is raised by a shutter driving mechanism to close the transfer port. Item 2. The vacuum processing apparatus according to Item 1.

The vacuum processing apparatus according to claim 3, wherein the shutter driving mechanism includes an air cylinder installed on the atmosphere side and a drive shaft that moves up and down by the air cylinder and moves up and down the shutter.

The vacuum processing apparatus according to claim 1, wherein the shutter is grounded.

A vacuum processing chamber having a stage on which the substrate to be processed is placed; and a transport port provided on a peripheral wall of the vacuum processing chamber for carrying the substrate into and out of the stage. In a vacuum processing apparatus for generating plasma in a room and performing plasma processing on a substrate to be processed on the stage,
A deposition shield installed along the inner peripheral wall of the vacuum processing chamber;
A shutter installed to be movable up and down along the inner peripheral wall of the vacuum processing chamber,
The deposition shield and the shutter are each at a grounded potential, and the shutter is retracted when the substrate to be processed is taken in and out of the transfer port, and the shutter is applied to the deposition shield during plasma processing. A vacuum processing apparatus characterized in that a uniform plasma is generated by displacing the electrodes so as to be in contact with each other and surrounding the plasma generation region with a curved surface having no unevenness.

8. The vacuum according to claim 7, wherein when the plasma is generated in the vacuum processing chamber, the shutter is raised by a shutter drive mechanism and closes the front of the transfer port in conformity with the deposition shield. Processing equipment.

The deposition shield is a cylindrical body having a cutout portion along the inner peripheral wall of the vacuum processing chamber,
The shutter is a curved plate body along the inner surface of the deposition shield, and has a shape that matches the notch portion,
When plasma is generated in the vacuum processing chamber, the shutter is pressed against the notch by a shutter drive mechanism to close the front of the transfer port, and the inner surface of the shutter is the same curved surface as the inner surface of the deposition shield. The vacuum processing apparatus according to claim 7, wherein:

In the end surface on the deposit shield side of the shutter,
The end surface is formed as a flat surface, a groove for fitting an O-ring on the stage side, and a groove for fitting a spiral seal made of metal are formed on the outer periphery thereof,
The vacuum processing apparatus according to claim 7, wherein the deposition shield and the shutter are electrically connected through the spiral seal during the process.

In the end surface on the deposition shield side of the shutter, the end surface is L-shaped so as to mesh with the end surface of the deposition shield, and the outer peripheral side of the end surface of the shutter is formed to be a convex portion,
A groove into which a metal spiral seal is fitted is formed on the end face of the convex portion of the shutter, and the concave portion of the deposition shield and the convex portion of the shutter are interposed between the spiral seal during the process. The vacuum processing apparatus according to claim 7, wherein the vacuum processing apparatus is connected to the vacuum processing apparatus.

The vacuum processing apparatus according to claim 7, wherein the deposition shield and the shutter are each provided with a heating mechanism.

The disk-shaped exhaust plate is disposed around the stage, and when the shutter is lifted, the shutter and the exhaust plate are in contact with each other and electrically connected to each other. Vacuum processing equipment.

A vacuum processing chamber having a stage on which the substrate to be processed is placed; and a transport port provided on a peripheral wall of the vacuum processing chamber for carrying the substrate into and out of the stage. In a vacuum processing apparatus for generating plasma in a room and performing plasma processing on a substrate to be processed on the stage,
A deposition shield installed along the inner peripheral wall of the vacuum processing chamber and having a notch at a position facing the transfer port;
A shutter that has a shape that matches the notch portion of the deposit shield, and that is formed so that the inner surface is the same curved surface as the inner surface of the deposit shield when it matches the notch portion, and that can be moved up and down And comprising
The deposition shield and the shutter are each at a grounded potential, and when the substrate to be processed is taken in and out of the transfer port, the shutter is retracted and passes through the notch to be processed. When plasma processing is performed, the shutter is displaced so as to match the notch of the deposition shield, and the plasma generation region is surrounded by a curved surface without unevenness, thereby generating uniform plasma. A vacuum processing apparatus.

When the plasma is generated in the vacuum processing chamber, the shutter is lifted by a shutter drive mechanism and matches the notch to close the transfer port, and the inner surface of the shutter is in contact with the inner surface of the deposition shield. The vacuum processing apparatus according to claim 14, wherein the same curved surface is formed.