KR20230086303A - Substrate supporting unit and apparatus for processing substrate - Google Patents

Abstract

An embodiment of the present invention relates to a substrate support unit that includes: a support plate on which a substrate is placed; a focus ring disposed on the support plate and provided to surround the substrate placed on the support plate; and a lift pin that raises and lowers the focus ring. The lift pin is provided in a space formed by a hole formed in the support plate and the focus ring. The gap formed by the lift pin and the space is less than 3 times the Debye length. Therefore, it is possible to improve substrate processing efficiency.

Description

Substrate support unit and substrate processing apparatus including the same

An embodiment of the present invention relates to a substrate support unit and a substrate processing apparatus including the same.

Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by very high temperatures, strong electric fields or RF Electromagnetic Fields. A semiconductor device manufacturing process may include an etching process of removing a thin film formed on a substrate such as a wafer using plasma. The etching process is performed when ions and/or radicals of the plasma collide with or react with the thin film on the substrate.

An apparatus for processing a substrate using plasma has a process chamber, a support assembly for supporting a substrate in the process chamber, and a plasma source for generating plasma from a gas that processes the substrate. FIG. 1 is a schematic view of a support assembly generally provided in an apparatus for processing a substrate using plasma, and FIG. 2 is an enlarged view of a portion of the support assembly of FIG. 1 . Referring to FIG. 1 , the support assembly includes an electrostatic chuck 1 for fixing a substrate with electrostatic force, a focus ring 3 surrounding an outer circumference of a substrate W seated on the electrostatic chuck 1, and a focus ring 3 ) It includes a lift pin 4 for lifting. The focus ring 3 focuses the plasma onto the substrate and distributes the plasma on the surface of the substrate with high uniformity. The lift pin 4 is accommodated in the hole 2 formed in the electrostatic chuck 1, and moves up and down in the hole 2 of the electrostatic chuck 1 by the driving member 5. Referring to FIG. 2 , the hole 2 is formed to have a larger diameter than the diameter of the lift pin 4 so that the lift pin 4 can move in the vertical direction. In this case, a large gap is formed between the lift pin 4 and the hole 2 . When the substrate W is treated with the plasma P, the plasma P enters the gap, and fine particles are generated by the intruding plasma P and attached to the substrate W and/or the electrostatic chuck 1. . At this time, there is a problem in that arcing occurs when current is intensively applied to the substrate W and/or the particles attached to the electrostatic chuck 1 .

An object of the present invention is to provide a support unit capable of improving substrate processing efficiency and a substrate processing apparatus including the same.

Another object of the present invention is to provide a support unit capable of preventing plasma from flowing into a space in which lift pins are accommodated, and a substrate processing apparatus including the support unit.

In addition, an object of an embodiment of the present invention is to provide a support unit capable of preventing attachment of particulates to a substrate and internal components of a chamber, and a substrate processing apparatus including the support unit.

In addition, an object of the present invention is to provide a substrate processing apparatus including a support unit capable of preventing arcing from occurring, and the same.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

An embodiment of the present invention discloses a support unit for supporting a substrate. The support unit includes a support plate on which the substrate is placed; a focus ring disposed on the support plate and provided to surround the substrate placed on the support plate; and a lift pin for moving the focus ring up and down, wherein the lift pin is provided in a hole formed in the support plate and a space formed by the focus ring, wherein a gap formed by the lift pin and the space is a device length. (Debye Length) can be formed less than three times.

The diameter of the hole of the support plate is larger than the diameter of the lift pin, and a gap is formed between the lower surface of the focus ring and the upper surface of the lift pin in a state in which the focus ring is not raised by the lift pin. A first gap and a second gap between an inner circumferential surface of the hole and an outer circumferential surface of the lift pin may be included, and the first gap and the second gap may be formed to be less than three times a Debye length.

When a central axis of the lift pin coincides with a central axis of the hole of the support plate, the second gap may be formed to be less than three times a Debye length.

When the center axis of the lift pin does not coincide with the center axis of the hole of the support plate, the second gap may be formed to be less than three times the Debye length.

When the lift pin contacts the inner circumferential surface of the hole of the support plate, the second gap may be formed to be less than three times a Debye length.

The focus ring includes a first ring provided to surround the substrate placed on the support plate, and a second ring disposed below the first ring and having a through hole, and the lift pin is insertable into the through hole. a pin portion having a first diameter, and a body portion coupled to the pin portion and having a second diameter greater than the first diameter, wherein the gap is formed in a state where the lift pin does not lift the focus ring. A third gap between the lower surface of the focus ring and the upper surface of the pin portion of the lift pin, a fourth gap between the inner circumferential surface of the hole of the support plate and the outer circumferential surface of the pin portion of the lift pin, and the hole of the support plate A fifth gap between an inner circumferential surface and an outer circumferential surface of the body portion of the lift pin may be included, and the third gap, the fourth gap, and the fifth gap may be formed to be less than three times the length of the device.

The focus ring includes a first ring provided to surround the substrate placed on the support plate, and a second ring provided below the first ring and having a through hole formed therein, and the lift pin is insertable into the through hole. It includes a first pin for lifting and lowering the first ring, and a hollow shaft-shaped second pin in which a through hole through which the first pin passes is formed while lifting and lowering the second ring, the gap is a sixth gap between the lower surface of the first ring and the upper surface of the first pin, the lower surface of the focus ring and the upper surface of the second pin in a state in which the lift pin does not lift the focus ring; an eighth gap between the inner circumferential surface of the through hole of the second ring and the outer circumferential surface of the first pin; and a ninth gap between the inner circumferential surface of the hole and the outer circumferential surface of the second pin of the support plate. Including, the sixth gap, the seventh gap, the eighth gap, and the ninth gap may be formed to be less than three times the length of the device.

A tenth gap is formed between an inner circumferential surface of the through hole of the second fin and an outer circumferential surface of the first fin, and the tenth gap may be less than three times the length of the device.

An embodiment of the present invention discloses an apparatus for processing a substrate. A substrate processing apparatus includes a process chamber having a processing space therein; a support unit supporting the substrate within the processing space; a gas supply unit supplying a process gas to the processing space; and a plasma source generating plasma from the process gas, wherein the support unit includes: a support plate on which the substrate is placed; a focus ring disposed on the support plate and provided to surround the substrate placed on the support plate; and a lift pin for moving the focus ring up and down, wherein the lift pin is provided in a hole formed in the support plate and a space formed by the focus ring, and a gap formed by the lift pin and the space is formed in the plasma It can be formed with a length that does not flow in.

The diameter of the hole of the support plate is larger than the diameter of the lift pin, and the gap is a first gap between a lower surface of the focus ring and an upper surface of the lift pin in a state in which the focus ring is not lifted by the lift pin. A first gap and a second gap between an inner circumferential surface of the hole and an outer circumferential surface of the lift pin may be formed, and the first gap and the second gap may be formed to a length through which the plasma does not flow.

When a central axis of the lift pin coincides with a central axis of the hole of the support plate, the second gap may be formed to a length through which the plasma does not flow.

When the center axis of the lift pin does not coincide with the center axis of the hole of the support plate, the plasma may be formed to a length that does not flow in.

When the lift pin contacts an inner circumferential surface of the hole of the support plate, the plasma may not be introduced.

The focus ring includes a first ring provided to surround the substrate placed on the support plate, and a second ring disposed below the first ring and having a through hole, and the lift pin is insertable into the through hole. a pin portion having a first diameter, and a body portion coupled to the pin portion and having a second diameter greater than the first diameter, wherein the gap is formed in a state where the lift pin does not lift the focus ring. A third gap between the lower surface of the focus ring and the upper surface of the pin portion of the lift pin, a fourth gap between the inner circumferential surface of the hole of the support plate and the outer circumferential surface of the pin portion of the lift pin, and the hole of the support plate A fifth gap between an inner circumferential surface and an outer circumferential surface of the body portion of the lift pin may be formed, and the third gap, the fourth gap, and the fifth gap may be formed to a length through which the plasma does not flow.

and a drive unit for driving the lift pin up and down and rotating, wherein the lift pin lifts and lowers the first ring at a first position where the pin part of the lift pin overlaps the through hole when viewed from above, and , When viewed from above, the pin portion of the lift pin overlaps with the second ring and may be provided to raise and lower the second ring at a second position outside the first position.

The focus ring includes a first ring provided to surround the substrate placed on the support plate, and a second ring provided below the first ring and having a through hole formed therein, and the lift pin is insertable into the through hole. It includes a first pin for lifting and lowering the first ring, and a hollow shaft-shaped second pin in which a through hole through which the first pin passes is formed while lifting and lowering the second ring, the gap is a sixth gap between the lower surface of the first ring and the upper surface of the first pin, the lower surface of the focus ring and the upper surface of the second pin in a state in which the lift pin does not lift the focus ring; a seventh gap between the inner circumferential surface of the through hole of the second ring and an outer circumferential surface of the first pin; and a ninth gap between the inner circumferential surface of the hole of the support plate and the outer circumferential surface of the second pin; , The sixth gap, the seventh gap, the eighth gap, and the ninth gap may be formed to a length through which the plasma does not flow.

A tenth gap may be formed between an inner circumferential surface of the through hole of the second fin and an outer circumferential surface of the first fin, and the tenth gap may be formed to a length at which the plasma does not flow.

A driving unit for independently driving the first pin and the second pin, the first pin passing through the through hole of the second ring to raise the first ring from the support plate to a first height, The second pin raises the second ring from the support plate to a second height, and the first height may be higher than the second height.

The length through which the plasma is not introduced may be less than three times the Debye length.

According to the present invention, it is possible to provide a support unit capable of improving substrate processing efficiency and a substrate processing apparatus including the same.

In addition, it is possible to prevent plasma from being introduced into a space where the lift pin is accommodated.

In addition, it is possible to prevent particles from adhering to the substrate and internal parts of the chamber.

Also, it is possible to minimize the occurrence of arcing in the substrate or electrostatic chuck.

Effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a diagram schematically illustrating a support assembly generally provided in an apparatus for processing a substrate using plasma.
FIG. 2 is an enlarged view of a portion of the support assembly of FIG. 1 .
3 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
4 is a diagram schematically showing a process chamber according to a first embodiment of the present invention.
5 is an operation diagram of the lift pin of FIG. 4;
6 to 8 are diagrams schematically showing the relationship between the lift pin, the hole of the support plate and the focus ring according to the first embodiment of the present invention.
9 is a schematic view of a process chamber according to a second embodiment of the present invention.
10 is an operation diagram of the lift pins of FIG. 9 .
11 to 13 are diagrams schematically showing the relationship between a lift pin, a hole in a support plate, and a focus ring according to a second embodiment of the present invention.
14 is a diagram schematically showing a process chamber according to a third embodiment of the present invention.
15 and 16 are operation diagrams of the lift pins of FIG. 14 .
17 is a diagram schematically illustrating a relationship between a lift pin, a hole in a support plate, and a focus ring according to a third embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. In addition, in describing preferred embodiments of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

'Including' a certain component means that other components may be further included, rather than excluding other components unless otherwise stated. Specifically, terms such as "comprise" or "having" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features or It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, the second element may also be termed a first element, without departing from the scope of the present invention.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when a component is referred to as “directly connected” or “directly connected” to another component, it should be understood that no other component exists in the middle. Other expressions describing the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to", etc., should be interpreted similarly.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in this application, they are not interpreted in an ideal or excessively formal meaning. .

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings.

3 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention, FIG. 4 is a view schematically showing a process chamber according to a first embodiment of the present invention, and FIG. 5 is a view showing the lift pins of FIG. 6 to 8 are diagrams schematically showing the relationship between the lift pin, the hole of the support plate and the focus ring according to the first embodiment of the present invention.

The substrate processing apparatus may include a device for etching the substrate (W). The substrate processing apparatus may process the substrate W using plasma. A treatment process of treating a substrate may be performed in a vacuum atmosphere. The substrate processing apparatus may include a substrate processing apparatus using capacitively coupled plasma (CCP) as a plasma source. The substrate processing apparatus may include a substrate processing apparatus using inductively coupled plasma (ICP) as a plasma source. The substrate processing apparatus may include a substrate processing apparatus using a remote plasma as a plasma source. Hereinafter, a capacitive coupled plasma processing apparatus will be described as an example.

Referring to FIG. 1 , a substrate processing apparatus 1 according to an embodiment of the present invention includes a load port 10, an atmospheric pressure transfer module 20, a vacuum transfer module 30, a load lock chamber 40, and a process chamber. (50) may be included.

The load port 10 may be disposed on one side of the normal pressure transfer module 20 to be described later. One or a plurality of load ports 10 may be provided. The number of load ports 10 may increase or decrease depending on process efficiency and footprint conditions. A container (F) according to an embodiment of the present invention may be placed in the load port (10). The container F is transported by a transport means (not shown) such as an Overhead Transfer Apparatus (OHT), an overhead conveyor, or an Automatic Guided Vehicle, or a load port 10 by an operator. It can be loaded into or unloaded from the load port (10). The container (F) may include various types of containers according to the type of goods to be stored. As the container F, an airtight container such as a front opening unified pod (FOUP) may be used.

Various items may be accommodated in the container F. The container (F) may include various types of containers according to the type of goods to be stored. For example, an object to be processed in the substrate processing apparatus 1 may be stored in the first container F1, which is one of the containers F. The object to be processed may be a substrate W such as a wafer. A support slot (not shown) in which the substrate W is seated may be provided in the first container F1.

In addition, in the second container F2, which is another one of the containers F, a ring member that is mounted on the substrate processing apparatus 1 and needs to be replaced may be accommodated. The ring member may be a focus ring or a dielectric ring installed in the process chamber 50 to be described later. In one example, the ring member may include a single focus ring. In another example, the ring member may include a first ring R1 and a second ring R2 having larger inner and outer diameters than the first ring R1.

A support slot in which the ring member is seated may be provided in the second container F2. Optionally, a ring member R and a ring carrier supporting the ring member R may be accommodated in the second container F2. A support slot in which the ring carrier is seated may be provided in the second container F2. The outer circumferential diameter of the ring member may have a larger diameter than the outer circumferential diameter of the substrate W. Thus, the space within the second container (F2) may have a slightly larger volume than the space within the first container (F1).

The normal pressure transfer module 20 and the vacuum transfer module 30 may be arranged along the first direction 2 . Hereinafter, when viewed from above, a direction perpendicular to the first direction (2) is defined as a second direction (4). In addition, a direction perpendicular to the plane including both the first direction (2) and the second direction (4) is defined as the third direction (6). Here, the third direction 6 is a direction perpendicular to the ground.

The normal pressure transfer module 20 may selectively transport the substrate W or the ring member R between the container F and the load lock chamber 40 to be described later. For example, the normal pressure transfer module 20 takes out the substrate W from the container F and transfers it to the load lock chamber 40 or takes out the substrate W from the load lock chamber 40 and transfers it to the container F ) can be returned. The normal pressure transfer module 20 may include a transfer frame 220 and a first transfer robot 240 . The transport frame 220 may be provided between the load port 10 and the load lock chamber 40 . That is, the load port 10 may be connected to the transport frame 220 . The transport frame 220 may be provided with normal pressure inside. The inside of the transport frame 220 may be maintained in an atmospheric pressure atmosphere.

A first transfer robot 240 may be provided in the transfer frame 220 . The first transport robot 240 may selectively transport the substrate W or the ring member R between the container F seated in the load port 10 and the load lock chamber 40 to be described later. The first transfer robot 240 may move in a vertical direction. The first transfer robot 240 may have a first transfer hand 242 that moves forward, backward or rotates on a horizontal plane. One or a plurality of first transfer hands 242 of the first transfer robot 240 may be provided. In one example, a plurality of first transfer hands 242 are provided. A substrate W may be placed on the first transfer hand 242 . Optionally, a ring carrier supporting the ring member may be placed on the first transfer hand 242 .

The vacuum transfer module 30 may be disposed between a load lock chamber 40 to be described later and a process chamber 50 to be described later. The vacuum transfer module 30 may include a transfer chamber 320 and a second transfer robot 340 .

An internal atmosphere of the transfer chamber 320 may be maintained as a vacuum pressure atmosphere. A second transfer robot 340 may be provided in the transfer chamber 320 . For example, the second transfer robot 340 may be located in the center of the transfer chamber 320 . The second transport robot 340 may selectively transport the substrate W or the ring member between the load lock chamber 40 and the process chamber 50 . Optionally, the vacuum transfer module 30 may transfer the substrate W between the process chambers 50 . The second transfer robot 340 can move in horizontal and vertical directions. The second transfer robot 340 may have a second transfer hand 342 that moves forward, backward or rotates on a horizontal surface. At least one second transfer hand 342 of the second transfer robot 340 may be provided.

At least one process chamber 50 to be described below may be connected to the transfer chamber 320 . The transfer chamber 320 may be provided in a polygonal shape. A load lock chamber 40 and a process chamber 50 may be disposed around the transfer chamber 320 . For example, as shown in FIG. 1, a hexagonal transfer chamber 320 is disposed at the center of the vacuum transfer module 30, and a load lock chamber 40 and a process chamber 50 are disposed around it. . However, the shape of the transfer chamber 320 and the number of process chambers may be variously modified and provided according to user needs.

The load lock chamber 40 may be disposed between the transfer frame 220 and the transfer chamber 320 . The load lock chamber 40 provides a buffer space between the transport frame 220 and the transfer chamber 320 in which the substrate W or ring member is exchanged. For example, in order to replace a ring member disposed in the process chamber 50 , a ring member used in the process chamber 50 may temporarily stay in the load lock chamber 40 . For example, in order to transfer a new ring member scheduled to be replaced to the process chamber 50 , the new ring member may temporarily stay in the load lock chamber 40 .

As described above, an internal atmosphere of the transfer frame 220 may be maintained as an atmospheric pressure atmosphere, and an internal atmosphere of the transfer chamber 320 may be maintained as a vacuum pressure atmosphere. The load lock chamber 40 is disposed between the transport frame 220 and the transfer chamber 320 so that its internal atmosphere can be switched between an atmospheric pressure atmosphere and a vacuum pressure atmosphere.

The transfer chamber 320 may be connected to one or more process chambers 50 . A plurality of process chambers 50 may be provided. The process chamber 50 may be a chamber for performing a process on the substrate (W). The process chamber 50 may be a plasma chamber that processes the substrate W using plasma. For example, the process chamber 50 may perform an etching process of removing a thin film on the substrate W using plasma, an ashing process of removing a photoresist film, and a deposition process of forming a thin film on the substrate W. , or may be a chamber for performing a dry cleaning process. However, it is not limited thereto, and the plasma treatment process performed in the process chamber 50 may be variously modified into a known plasma treatment process.

4 is a diagram schematically showing a process chamber according to a first embodiment of the present invention. Referring to FIG. 4 , a process chamber 50 may include a housing 510 , a gas supply unit 530 , a plasma source, and a substrate support unit 520 .

The housing 510 provides a processing space in which a substrate processing space is performed. The housing 510 may be provided in a sealed shape. When processing the substrate W, the processing space of the housing 510 may be maintained in a substantially vacuum atmosphere. The housing 510 may be made of a metal material. For example, the housing 510 may be made of aluminum. Housing 510 may be grounded. A carrying inlet 512 through which the substrate W and the ring member R are carried in or taken out may be formed on one side of the housing 510 . The intake port 512 may be selectively opened and closed by the gate valve 514 .

An exhaust hole 516 may be formed on the bottom surface of the housing 510 . The exhaust line 560 may be connected to the exhaust hole 516 . The exhaust line 553 may exhaust process gas, process by-products, and the like supplied to the processing space of the housing 510 to the outside of the housing 510 through the exhaust hole 516 . An exhaust baffle 552 may be provided above the exhaust hole 516 to more uniformly exhaust the processing space. When viewed from the top, the exhaust baffle 552 may have a generally ring shape. In addition, at least one hole may be formed in the exhaust baffle 552 .

The gas supply unit 530 supplies process gas to the processing space of the housing 510 . The gas supply unit 530 may include a gas supply nozzle 532 , a gas supply line 534 , and a gas supply source 536 . In one example, the gas supply nozzle 532 may be installed in the central portion of the upper surface of the housing 510 . An injection hole is formed on the bottom of the gas supply nozzle 532 . The nozzle supplies process gas into the housing 510 . The gas supply line 534 connects the gas supply nozzle 532 and the gas supply source 536 . The gas supply line 534 supplies process gas stored in the gas supply source 536 to the gas supply nozzle 532 . A valve 538 is installed in the gas supply line 534 . The valve 538 may open and close the gas supply line 534 to adjust the flow rate of the process gas supplied through the gas supply line 534 .

The process chamber 50 may be provided as a Capacitively Coupled Plasma (CCP) device or as an Inductively Coupled Plasma (ICP) device. Hereinafter, a case in which the process chamber 50 is provided as a capacitively coupled plasma device will be described. However, unlike this, the process chamber 50 may be provided as an Inductively Coupled Plasma (ICP) device.

The process chamber 50 has an upper electrode and a lower electrode as a plasma source. According to an example, the upper electrode may be provided to the shower head unit 580 to be described later, and the lower electrode may be provided to the electrode 527 provided to the substrate support unit 520. The upper electrode and the lower electrode may be vertically disposed parallel to each other inside the housing 510 . One of the two electrodes may apply high-frequency power, and the other electrode may be grounded. An electromagnetic field is formed in a space between both electrodes, and process gas supplied to the space may be excited into a plasma state. A substrate treatment process is performed using plasma. High-frequency power may be applied to the lower electrode, and the upper electrode may be grounded. Alternatively, high-frequency power may be applied to the upper electrode and the lower electrode, respectively. Due to this, an electromagnetic field is generated between the upper electrode and the lower electrode. The generated electromagnetic field excites the process gas provided inside the housing 510 into a plasma state.

The shower head unit 580 may include a gas dispensing plate 592 and a support 596 . A certain space may be formed between the gas dispensing plate 592 and the upper surface of the housing 510 . The gas injection plate 592 may be provided in a plate shape having a constant thickness. A bottom surface of the gas distributing plate 592 may be anodized to prevent arc generation by plasma. A cross section of the gas injection plate 592 may have the same shape and cross section as that of the substrate support unit 520 . The gas injection plate 592 includes a plurality of through holes 593 . The through hole 593 penetrates the upper and lower surfaces of the gas injection plate 592 in a vertical direction. The gas dispensing plate 592 may include a metal material. The gas dispensing plate 592 may be electrically connected to the power source 592a. The power source 592a may be provided as a high frequency power source. Alternatively, the gas injection plate 592 may be electrically grounded.

The support part 596 supports the side of the gas injection plate 592 . The upper end of the support part 592 is connected to the upper surface of the housing 510 and the lower end is connected to the side of the gas dispensing plate 592 . The support part 596 may include a non-metallic material.

The substrate support unit 520 supports the substrate W inside the housing 510 . Located. The substrate support unit 520 may be spaced apart from the bottom surface of the housing 510 upwardly. In one example, the substrate support unit 520 may be provided as an electrostatic chuck that adsorbs the substrate W using electrostatic force. Alternatively, the substrate support unit 520 may support the substrate W in various ways such as a vacuum adsorption method or mechanical clamping. The substrate support unit 520 is described as being provided as an electrostatic chuck.

In one example, the substrate support unit 520 includes a support plate 521, a cooling plate 522, an insulating plate 523, a base 524, a focus ring R, a covering CR, and a substrate lift pin assembly 570. and a ring lift pin assembly 560 .

Hereinafter, the support plate 521 will be described as being provided as the dielectric plate 521 . The dielectric plate 521 is positioned at the upper end of the substrate support unit 520 . The dielectric plate 521 applies an electrostatic force to the substrate W by receiving external power. The dielectric plate 521 may be provided with a disk-shaped dielectric substance. A substrate W is placed on the upper surface of the dielectric plate 521 . In one example, the upper surface of the dielectric plate 521 has a smaller radius than the substrate W. When the substrate W is placed on the upper surface of the dielectric plate 521, the edge region of the substrate W is located outside the dielectric plate 521. An electrode 527 and a heater 526 are embedded in the dielectric plate 521 . The electrode 527 may be positioned above the heater 526 . The electrode 527 is electrically connected to a power source (not shown). The power source (not shown) may include a DC power source. An electrostatic force acts between the electrode 527 and the substrate W by the current applied to the electrode 527 . Accordingly, the substrate W is adsorbed to the dielectric plate 521 .

Heat generated by the heater 526 is transferred to the substrate W through the dielectric plate 521 . The substrate W may be maintained at a predetermined temperature by the heat generated by the heater 526 . The heater 526 may include a spiral coil. A plurality of heaters 526 are provided. The heaters 526 may be respectively provided in different regions of the dielectric plate 521 . For example, a heater 526 for heating a central region of the dielectric plate 521 and a heater 526 for heating an edge region of the dielectric plate 521 may be respectively provided, and these heaters 526 may be provided independently of each other. can be controlled

In the above example, it has been described that the heater 526 is provided within the dielectric plate 521 , but is not limited thereto, and the heater 526 may not be provided within the dielectric plate 521 .

The cooling plate 522 is positioned below the dielectric plate 521 . The cooling plate 522 may be provided in a disk shape. The cooling plate 522 may be made of a conductive material. For example, the cooling plate 522 may be made of aluminum. An upper central region of the cooling plate 522 may have an area corresponding to a lower surface of the dielectric plate 521 . A flow path 522a may be provided inside the cooling plate 522 . The passage 522a may be spirally formed inside the cooling plate 522 . The passage 522a may cool the cooling plate 522 . Cooling fluid may be supplied to the passage 522a. For example, the cooling fluid may be provided as cooling water. The cooling plate 522 may include a metal plate. According to one example, the entire area of the cooling plate 522 may be provided as a metal plate. The cooling plate 522 may be electrically connected to a power source (not shown). A power source (not shown) may be provided as a high frequency power source that generates high frequency power. The high frequency power may be provided as an RF power. The RF power may be provided as a high bias power RF power. The cooling plate 522 receives high frequency power from a power source (not shown). Due to this, the cooling plate 522 can function as an electrode. In one example, the cooling plate 522 may be provided grounded.

An insulating plate 523 is provided below the cooling plate 522 . The insulating plate 523 is provided with an insulating material and electrically insulates the cooling plate 522 from a base 524 to be described later. When viewed from above, the insulating plate 523 may be provided in a circular plate shape. The insulating plate 523 may have an area corresponding to that of the cooling plate 522 .

A base 524 is provided below the cooling plate 522 . The base 524 may be provided below the insulating plate 523 . When viewed from the top, the base 524 may be provided in a ring shape. A substrate lift pin assembly 570 to be described later and a ring lift pin assembly 560 to be described later may be positioned in the inner space of the base 524 .

The base 524 has a connecting member 524b. The connecting member 524b connects the outer surface of the base 524 and the inner wall of the housing 510 . A plurality of connecting members 524b may be provided on the outer surface of the base 524 at regular intervals. The connecting member 524b supports the substrate support unit 520 inside the housing 510 . In addition, the connecting member 524b is connected to the inner wall of the housing 510 so that the base 524 is electrically grounded. In addition, a power source (not shown) connected to the substrate support unit through the connecting member 524b may extend to the outside of the housing 510 .

The focus ring R is disposed on the support plate 221 . The focus ring R and the covering CR are disposed on the edge area of the substrate support unit 520 . The focus ring R is disposed so that its lower surface is in contact with the upper surface of the support plate 221 . When viewed from the top, the focus ring R has an annular shape. The focus ring R serves to focus plasma onto the substrate W while processing the substrate W. In one example, the focus ring R may be made of a conductive material. In one example, the focus ring R may be made of silicon (Si), silicon carbide (SiC), or the like. However, it is not limited thereto and may be provided in various materials such as quartz.

The covering ring CR is placed outside the focus ring R to protect the outside of the focus ring R. In one example, a covering CR is provided to surround the focus ring R. In one example, the covering CR is provided with a quartz material whose surface is ion-reinforced to improve corrosion resistance (plasma resistance).

The substrate lift pin assembly 570 may move the substrate W up and down. The substrate lift pin assembly 570 may include a substrate lift pin 572 , a lifting plate 574 , and a pin driver 576 . Substrate lift pins 572 may be coupled to lift plate 574 . The elevating plate 574 may move up and down by the pin driver 576 .

The ring lift pin assembly 560 may lift and lower the focus ring R placed on the upper surface of the dielectric plate 521 . The ring lift pin assembly 560 includes a lift pin 561 and a driving device 568 .

The lift pin 561 raises and lowers the focus ring R. A plurality of lift pins 561 may be provided. For example, the lift pins 561 may be provided to support the focus ring R at three points. Optionally, lift pins 561 may be provided in greater numbers than this. When viewed from above, the lift pins 561 may be disposed so as not to overlap the heater 526 and the flow path 522a.

The drive device 568 moves the lift pins 561 in the vertical direction and rotates the lift pins 561 . The driving device 568 may be a cylinder or motor using pneumatic or hydraulic pressure. However, it is not limited thereto, and the driving device 568 may be provided with various known devices capable of providing a driving force.

Referring to FIG. 5 , the driving device 568 raises the lift pin 561, and accordingly, the focus ring R is raised. When the focus ring R is raised, the second transfer hand 342 of the second transfer robot 340 enters and carries the focus ring R out of the chamber.

The lift pins 561 are provided inside the substrate support unit 520 . In one example, the ring lift pins 561 are provided to be movable in the vertical direction along the holes 5211 formed in the dielectric plate 521 , the cooling plate 522 , and/or the insulating plate 523 . The lift pin 561 is provided in a space formed by the hole 5211 and the focus ring R. The space may be defined by the inner circumferential surface of the hole 5211 and the lower surface of the focus ring R contacting the upper surface of the support plate 521 . The diameter of the hole 5211 is larger than that of the lift pin 561 . The diameter of the hole 5211 is larger than the maximum diameter of the lift pin 561 . The gap formed by the lift pins 561 and the space may be formed to a length so that plasma does not flow into the space. At this time, the length at which the plasma does not flow into the space is less than three times the Debye length. That is, the size of all gaps existing in the space where the lift pins 561 are accommodated is formed to be less than three times the length of the device, so that the inflow of plasma can be prevented.

The gap is the first gap d1 between the lower surface of the focus ring R and the upper surface of the lift pin 561 in a state in which the focus ring R is not lifted by the lift pin 561, and the hole 5211 ) and the outer circumferential surface of the lift pin 561 may include a second gap d2. In this case, the first gap d1 and the second gap d2 may be formed to be less than three times the length of the Debye.

Referring to FIG. 6 , when the central axis (A) of the lift pin 561 coincides with the central axis (C) of the hole 5211, the second gap (d2) is less than three times the Debye Length. can be formed as Referring to FIG. 7 , when the center axis (A) of the lift pin 561 does not coincide with the center axis (C) of the hole 5211, the second gap (d2) is three times the Debye Length. can be formed below. Since the diameter of the hole 5211 is larger than the diameter of the lift pin 561, as the lift pin 561 is driven by the drive device 568, the central axis A of the lift pin 561 moves through the hole ( 5211) may be positioned eccentrically with respect to the central axis (C). In this case, the gap d2-1 formed at a position close to the direction in which the lift pins 561 are eccentric and the gap d2-2 formed at a position far from the direction in which the lift pins 561 are eccentric are each other. Can be made in different lengths. The gap d2-1 formed at a position close to the direction in which the lift pins 561 are eccentric may be smaller than the gap d2-2 formed at a position far from the direction in which the lift pins 561 are eccentric. there is. However, even in this case, each of the second gaps d2-1 and d2-2 may be formed to be less than three times the Debye length.

Referring to FIG. 8 , even when the lift pin 561 contacts the inner circumferential surface of the hole 5211, the second gap d2-3 may be formed to be less than three times the Debye length. The second gap d2-3 formed when the lift pin 561 contacts the inner circumferential surface of the hole 5211 is the maximum gap that can be formed between the inner circumferential surface of the hole 5211 and the outer circumferential surface of the lift pin 561. can For example, the maximum gap d2-3 may be 3 λd (three times the length of the Debye).

Hereinafter, a substrate processing apparatus according to a second embodiment of the present invention will be described in detail with reference to the drawings.

9 is a view schematically showing a process chamber according to a second embodiment of the present invention, FIG. 10 is an operation diagram of the lift pins of FIG. 9, and FIGS. 11 to 13 are lifts according to a second embodiment of the present invention. It is a diagram schematically showing the relationship between the pin, the hole of the support plate, and the focus ring.

Referring to FIG. 9 , the substrate processing apparatus according to the second embodiment of the present invention is similar to the first embodiment except for the structure of the focus ring R and the structure of the lift pins 561 provided in the process chamber 50 . It is provided in the same way as the substrate processing apparatus according to. Hereinafter, a structure different from that of the substrate processing apparatus according to the first embodiment will be described.

Referring to FIG. 9 , the ring member R and the covering CR are disposed on an edge area of the substrate support unit 520 . When viewed from the top, the ring member R has an annular shape. The ring member R serves to concentrate plasma onto the substrate W while processing the substrate W. In one example, the ring member R may be provided with a conductive material. In one example, the ring member R may be made of silicon (Si) or silicon carbide (SiC).

In one example, the ring member R includes a first ring R1 and a second ring R2. The first ring R1 has smaller inner and outer diameters than the second ring R2. The second ring R2 is provided below the first ring R1. On the substrate support unit 520, the lower surface of the first ring R1 and the upper surface of the second ring R2 are placed in contact with each other. In one example, when viewed from above, a portion of the second ring R2 is provided to overlap the first ring R1.

In one example, the first ring R1 may have a shape in which a height of an inner upper surface is lower than a height of an outer upper surface. The lower surface of the edge region of the substrate W may be placed on the inner upper surface of the first ring R1. In addition, the first ring R1 may have an upwardly inclined surface between an inner upper surface and an outer upper surface in a direction from the center of the substrate W toward the outside of the substrate W. Due to this, when the substrate W is placed on the inner upper surface of the first ring R1, even if the placement position is somewhat inaccurate, the substrate W slides along the inclined surface of the first ring R1 so that the first ring R1 ) can be properly placed on the inner upper surface of the

A through hole 525 is formed in the second ring R2. The lift pin 561 is provided to be inserted into the through hole 525 formed in the second ring R2. When viewed from above, the through hole 525 and the first ring R1 are provided to overlap. Accordingly, the lift pin 561 can move the first ring R1 placed on top of the second ring R2 up and down.

The covering CR is placed on the outside of the ring member R to protect the outside of the ring member R. In one example, the covering CR is provided to surround the second ring R2. In one example, the covering CR is provided with a quartz material whose surface is ion-reinforced to improve corrosion resistance (plasma resistance).

The ring lift pin assembly 560 may lift and lower the ring member R placed on the upper surface of the dielectric plate 521 . The ring lift pin assembly 560 includes a ring lift pin 561, a rotating ring 562, and a driving device 568.

The lift pin 561 raises and lowers the first ring R1 and the second ring R2. The lift pin 561 is provided to be inserted into the through hole 525 and has a pin portion 561 having a first diameter, and a body portion coupled to the pin portion 561 and having a second diameter greater than the first diameter ( 564). The inner diameter of the rotating ring 562 is provided to be in contact with the outer diameter of the body portion 564 . Accordingly, the rotating ring 562 is provided to be rotatable together with the body portion 564 . When viewed from above, when the body portion 564 is rotated clockwise, the rotating ring 562 is rotated counterclockwise.

The driving device 568 moves the lift pins 561 in the vertical direction and rotates the lift pins 561 or the rotation ring 562 . In one example, drive device 568 rotates body portion 564 . As the body part 564 rotates, the lift pin 561 rotates. The driving device 568 may be a cylinder or motor using pneumatic or hydraulic pressure. However, it is not limited thereto, and the driving device 568 may be provided with various known devices capable of providing a driving force.

The lift pin 561 and the rotation ring 562 are provided inside the substrate support unit 520 . In one example, the lift pins 561 are provided to be movable in the vertical direction along pin holes formed in the cooling plate 522 and/or the insulating plate 523 . The rotating ring 562 is provided below the lift pin 561 . In one example, a plurality of lift pins 561 may be provided. For example, the lift pins 561 may be provided to support the focus ring R at three points. Optionally, lift pins may be provided in greater numbers. When viewed from above, the lift pins 561 may be disposed so as not to overlap the heater 526 and the flow path 522a.

A through hole 525 is formed in the second ring R2. The pin unit 561 is provided to be inserted into the through hole 525 formed in the second ring R2. When viewed from above, the through hole 525 and the first ring R1 are provided to overlap. Accordingly, the pin unit 561 may lift and lower the first ring R1 placed on top of the second ring R2.

Referring to FIG. 10 , the driving device 568 rotates the body portion 564 so that the central axis of the pin portion 561 coincides with the central axis of the through hole 525 . When the pin part 561 is located at the first position overlapping the through hole 525 when viewed from above, the driving device 568 lifts the body part 564 to lift the first ring R1. When the first ring R1 is elevated, the second transport robot 340 transports the first ring R1. Then, when viewed from the top, the driving device 568 rotates the body portion 564 so that the pin portion 561 overlaps the second ring R2. A position where the pin part 561 overlaps the second ring R2 may be defined as a second position out of the first position. When the pin part 561 is positioned at the second position, the driving device 568 raises the body part 564 to raise the second ring R2 to a certain height. When the second ring R2 is raised, the second transport robot 340 transports the second ring R2.

The lift pin 561 is provided in a space formed by the hole 5211 and the focus ring R. The space may be defined by the inner circumferential surface of the hole 5211 and the lower surface of the focus ring R contacting the upper surface of the support plate 521 . The diameter of the hole 5211 is larger than that of the lift pin 561 . The diameter of the hole 5211 is larger than the maximum diameter of the lift pin 561 . The diameter of the hole 5211 is greater than that of the pin part 565. The diameter of the hole 5211 is greater than that of the body part 564. The gap formed by the lift pins 561 and the space may be formed to a length so that plasma does not flow into the space. At this time, the length at which the plasma does not flow into the space is less than three times the Debye length. That is, the size of all gaps existing in the space where the lift pins 561 are accommodated is formed to be less than three times the length of the device, so that the inflow of plasma can be prevented.

Referring to FIG. 11 , when the center axis of the lift pin 561 is positioned coincident with the center of the hole 5211, the gap is the focus ring (R) in a state where the lift pin 561 does not lift the focus ring (R). The third gap d3 between the lower surface of R) and the upper surface of the pin part 561, the fourth gap d4 between the inner circumferential surface of the hole 5211 and the outer circumferential surface of the pin part 561, and the hole ( 5211) and the fifth gap d5 between the inner circumferential surface and the outer circumferential surface of the body portion 564. When the central axis of the lift pin 561 coincides with the central axis of the hole 5211, the central axis C1 of the pin part 565, the central axis C2 of the body part 564, and the hole 5211 This means that all central axes coincide. The third gap d3 , the fourth gap d4 , and the fifth gap d5 are formed to a length through which plasma does not flow. The third gap d3, the fourth gap d4, and the fifth gap d5 are formed to be less than three times the length of the Debye.

Referring to FIG. 12 , when the pin part 561 overlaps the through hole 525 due to the rotation of the body part 564, the central axis C1 of the pin part 565 is the center of the hole 5211. It can be positioned eccentrically with respect to the central axis. In this case, the gap d4-2 formed at a position close to the direction in which the pin part 561 is eccentric and the gap d4-3 formed at a position far from the direction in which the pin part 561 is eccentric are can be formed as The gap d4-2 formed at a position close to the direction in which the pin unit 561 is eccentric may be smaller than the gap d4-3 formed at a position far from the direction in which the pin unit 561 is eccentric. there is. However, even in this case, each of the fourth gaps d4 - 2 and d4 - 3 may be formed to be less than three times the Debye length.

Referring to FIG. 13 , when the pin part 561 is positioned in a second position that does not overlap with the through hole 525 by the rotation of the body part 564, the central axis C1 of the pin part 561 forms a hole. 5211 may be positioned eccentrically about the central axis. In this case, the gap d4-2 formed at a position close to the direction in which the pin part 561 is eccentric and the gap d2-3 formed at a position far from the direction in which the pin part 561 is eccentric are mutually related to each other. Other gaps may be formed. The gap d4-2 formed at a position close to the direction in which the pin unit 561 is eccentric may be smaller than the gap d4-3 formed at a position far from the direction in which the pin unit 561 is eccentric. there is. However, even in this case, each of the fourth gaps d4 - 2 and d4 - 3 may be formed to be less than three times the Debye length.

Hereinafter, a substrate processing apparatus according to a third embodiment of the present invention will be described in detail with reference to the drawings.

14 is a diagram schematically showing a process chamber according to a third embodiment of the present invention, FIGS. 15 and 16 are operation diagrams of the lift pins of FIG. 14, and FIG. 17 is a lift according to a third embodiment of the present invention. It is a diagram schematically showing the relationship between the pin, the hole of the support plate, and the focus ring.

Referring to FIG. 14 , the substrate processing apparatus according to the third embodiment of the present invention is similar to the first embodiment except for the structure of the focus ring R and the structure of the lift pins 561 provided in the process chamber 50 . It is provided in the same way as the substrate processing apparatus according to. Hereinafter, a structure different from that of the substrate processing apparatus according to the first embodiment will be described.

Referring to FIG. 14 , the ring member R and the covering CR are disposed on an edge area of the substrate support unit 520 . When viewed from the top, the ring member R has an annular shape. The ring member R serves to concentrate plasma onto the substrate W while processing the substrate W. In one example, the ring member R may be provided with a conductive material. In one example, the ring member R may be made of silicon (Si) or silicon carbide (SiC).

In one example, the ring member R includes a first ring R1 and a second ring R2. The first ring R1 has smaller inner and outer diameters than the second ring R2. The second ring R2 is provided below the first ring R1. On the substrate support unit 520, the lower surface of the first ring R1 and the upper surface of the second ring R2 are placed in contact with each other. In one example, when viewed from above, a portion of the second ring R2 is provided to overlap the first ring R1.

In one example, the first ring R1 may have a shape in which a height of an inner upper surface is lower than a height of an outer upper surface. The lower surface of the edge region of the substrate W may be placed on the inner upper surface of the first ring R1. In addition, the first ring R1 may have an upwardly inclined surface between an inner upper surface and an outer upper surface in a direction from the center of the substrate W toward the outside of the substrate W. Due to this, when the substrate W is placed on the inner upper surface of the first ring R1, even if the placement position is somewhat inaccurate, the substrate W slides along the inclined surface of the first ring R1 so that the first ring R1 ) can be properly placed on the inner upper surface of the

A through hole 525 is formed in the second ring R2. The lift pin 561 is provided to be inserted into the through hole 525 formed in the second ring R2. When viewed from above, the through hole 525 and the first ring R1 are provided to overlap. Accordingly, the lift pin 561 can move the first ring R1 placed on top of the second ring R2 up and down.

The covering CR is placed on the outside of the ring member R to protect the outside of the ring member R. In one example, the covering CR is provided to surround the second ring R2. In one example, the covering CR is provided with a quartz material whose surface is ion-reinforced to improve corrosion resistance (plasma resistance).

The ring lift pin assembly 560 may lift and lower the ring member R placed on the upper surface of the dielectric plate 521 .

The ring lift pin assembly 560 may include a lift pin 561 and driving units 563 and 564 . The lift pin 561 may include a first pin 566 and a second pin 567 . The first pin 566 moves the first ring R1 up and down, and the second pin 567 moves the second ring R2 up and down. The driving units 563 and 564 drive the first pin 566 and the second pin 567. In one example, the driving units 563 and 564 may include a first driving mechanism 563 and a second driving mechanism 564 . The first driving mechanism 563 moves the first pin 566 in the vertical direction, and the second driving mechanism 564 moves the second pin 567 in the vertical direction. Optionally, the driving units 563 and 564 may be provided as a single driving device capable of separately moving the first pin 566 and the second pin 567 in the vertical direction. The driving units 563 and 564 may be cylinders or motors using pneumatic or hydraulic pressure. However, it is not limited thereto, and the driving units 563 and 564 may be provided with various known devices capable of providing driving force.

The first pin 566 and the second pin 562 are provided inside the substrate support unit 520 . In one example, the first pin 566 and the second pin 567 move in a vertical direction along a pin hole 5211 formed in the dielectric plate 521, the cooling plate 522, and/or the insulating plate 523. possible is provided. In one example, a plurality of first pins 566 and second pins 567 may be provided. For example, the first pin 566 and the second pin 567 may be provided to support the ring member R at three points. Optionally, a greater number of first pins 566 and second pins 567 may be provided. When viewed from above, the first fin 567 and the second fin 562 may be disposed so as not to overlap the heater 526 and the flow path 522a.

The first pin 566 is provided in a pin shape, and the second pin 567 is provided in a hollow shaft shape having a through hole 5671 therein. The first pin 566 is provided in the through hole 5671 of the second pin 567 to be movable in the vertical direction. A through hole 5671 is formed in the second pin 567 . The first pin 566 is moved inside the second pin 567 and is provided to be inserted into the through hole 5671 formed in the second pin 567 . When viewed from above, the through hole 5671 and the first ring R1 are provided to overlap. Accordingly, the first pin 566 may move up and down the first ring R1 placed on top of the second ring R2.

While the substrate W is being processed, the upper end of the first pin 566 may be located below the lower surface of the first ring R1 as shown in FIG. 14 .

The ring member R may be replaced after the substrate W is processed or before processing a subsequent substrate W. In one example, after the substrate W is processed, the ring member R is replaced before a subsequent substrate W is loaded into the process chamber 50 . Referring to FIGS. 15 and 16 , the first driving mechanism 563 raises the first pin 566 . At this time, the upper end of the first pin 566 may protrude higher than the upper surface of the second ring R2. In one example, the first pin 566 is raised by the first height H1. The first height H1 may be a height between the upper end of the first pin 566 and the upper surface of the second ring R2. Also, the first height H1 may be a height measured in an upward direction from the upper surface of the dielectric plate 521 on which the substrate W is placed. When the first pin 566 reaches the first height H1, the second transfer hand 342 enters the inside of the process chamber 50 and carries out the first ring R1. After the first ring R1 is removed from the substrate support unit 520, the second ring R2 is transported. As shown in FIG. 16 , the second driving mechanism 564 raises the second pin 562 . In one example, the second pin 562 is raised by the second height H2. The second height H2 is a height measured in an upward direction from the upper surface of the dielectric plate 521 on which the substrate W is placed. The second height H2 may refer to a height between a portion of the upper surface of the dielectric plate 521 where the substrate W is placed and a lower surface of the second ring R2 supported by the second pin 562 . In one example, the second height H2 is provided at a height lower than the first height H1. When the second pin 562 reaches the second height, the second transfer hand 342 enters the process chamber 50 and transfers the second ring R2 to the outside of the process chamber 50 .

The lift pin 561 is provided in a space formed by the hole 5211 and the focus ring R. The space may be defined by the inner circumferential surface of the hole 5211 and the lower surface of the focus ring R contacting the upper surface of the support plate 521 . The diameter of the hole 5211 is larger than that of the lift pin 561 . The diameter of the hole 5211 is larger than the maximum diameter of the lift pin 561 . The diameter of the hole 5211 may be larger than that of the first pin 566 . The diameter of the hole 5211 may be larger than that of the second pin 562 . The gap formed by the lift pins 561 and the space may be formed to a length so that plasma does not flow into the space. At this time, the length at which the plasma does not flow into the space is less than three times the Debye length. That is, the size of all gaps existing in the space where the lift pins 561 are accommodated is formed to be less than three times the length of the device, so that the inflow of plasma can be prevented.

Referring to FIG. 17, the gap is the sixth gap between the lower surface of the first ring R1 and the upper surface of the first pin 566 in a state in which the lift pin 561 does not lift the first ring R1. (d6), the seventh gap (d7) between the lower surface of the second ring (R) and the upper surface of the second pin 567, and the inner circumferential surface of the through hole 525 of the second ring (R2) An eighth gap d8 between the outer circumferential surfaces of the first pin 566 and a ninth gap d9 between the inner circumferential surface of the hole 5211 and the outer circumferential surface of the second pin 567 are included. The sixth gap d6 , the seventh gap d7 , the eighth gap d8 , and the ninth gap d9 are formed to a length through which plasma does not flow. The sixth gap d6, the seventh gap d7, the eighth gap d8, and the ninth gap d9 are formed to be less than three times the length of the Debye. In addition, a tenth gap d10 is formed between the inner circumferential surface of the through hole 5671 of the second fin 567 and the outer circumferential surface of the first fin 566 . The tenth gap d10 is formed to a length through which plasma does not flow. The tenth gap d10 is formed to be less than three times the length of the Debye.

In the case of a structure having a lift pin for lifting the focus ring, a large gap is formed due to a hole in which the lift pin is accommodated, and plasma enters the gap. When particulates are generated by plasma penetrating into the gap and attached to parts constituting the inside of the chamber, such as wafers or chucks, current is intensively applied to the particulates, resulting in arcing. However, according to the present invention, it is possible to prevent the invasion of plasma by configuring the size of all gaps existing in the space where the lift pins are accommodated to λd (Debye Length) or less. Through this, the generation of particulates can be prevented.

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The foregoing embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in specific application fields and uses of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

Claims (19)

In the support unit for supporting the substrate,
a support plate on which the substrate is placed;
a focus ring disposed on the support plate and provided to surround the substrate placed on the support plate;
A lift pin for raising and lowering the focus ring;
The lift pins are provided in a space formed by a hole formed in the support plate and the focus ring,
The support unit of claim 1 , wherein a gap formed by the lift pin and the space is less than three times a Debye Length. According to claim 1,
The diameter of the hole of the support plate is formed larger than the diameter of the lift pin,
The gap may be a first gap between a lower surface of the focus ring and an upper surface of the lift pin in a state in which the focus ring is not raised by the lift pin, and a second gap between an inner circumferential surface of the hole and an outer circumferential surface of the lift pin. including gaps;
The support unit of claim 1 , wherein the first gap and the second gap are formed to be less than three times a Debye Length. According to claim 2,
The support unit of claim 1 , wherein the second gap is formed to be less than three times a Debye Length when a central axis of the lift pin coincides with a central axis of the hole of the support plate. According to claim 2,
When the center axis of the lift pin does not match the center axis of the hole of the support plate, the second gap is formed to be less than three times a Debye length. According to claim 2,
When the lift pin contacts the inner circumferential surface of the hole of the support plate, the second gap is formed to be less than three times a Debye Length. According to claim 1,
The focus ring includes a first ring provided to surround the substrate placed on the support plate, and a second ring disposed below the first ring and having a through hole formed therein,
The lift pin includes a pin portion provided to be inserted into the through hole and having a first diameter, and a body portion coupled to the pin portion and having a second diameter greater than the first diameter;
The gap is a third gap between the lower surface of the focus ring and the upper surface of the pin portion of the lift pin in a state in which the focus ring is not raised by the lift pin, and a gap between an inner circumferential surface of the hole of the support plate and the lift pin. a fourth gap between an outer circumferential surface of the pin portion and a fifth gap between an inner circumferential surface of the hole of the support plate and an outer circumferential surface of the body portion of the lift pin;
The support unit of claim 1, wherein the third gap, the fourth gap, and the fifth gap are formed to be less than three times the length of the device. According to claim 1,
The focus ring includes a first ring provided to surround the substrate placed on the support plate, and a second ring provided below the first ring and having a through hole formed therein,
The lift pin is provided to be inserted into the through hole, and has a hollow shaft shape in which a first pin for lifting and lowering the first ring and a through hole through which the first pin passes are formed inside for lifting and lowering the second ring. Including the second pin of,
The gap is a sixth gap between the lower surface of the first ring and the upper surface of the first pin in a state in which the focus ring is not raised by the lift pin, and a gap between the lower surface of the focus ring and the second pin. A seventh gap between the upper surface, an eighth gap between the inner circumferential surface of the through hole of the second ring and the outer circumferential surface of the first pin, and a ninth gap between the inner circumferential surface of the hole of the support plate and the outer circumferential surface of the second pin. including gaps;
The sixth gap, the seventh gap, the eighth gap, and the ninth gap are formed to be less than three times the length of the device. According to claim 7,
A tenth gap is formed between the inner circumferential surface of the through hole of the second fin and the outer circumferential surface of the first fin,
The tenth gap is three times or less than the length of the device. In the device for processing the substrate,
a processing chamber having a processing space therein;
a support unit supporting the substrate within the processing space;
a gas supply unit supplying a process gas to the processing space; and
A plasma source generating plasma from the process gas;
The support unit is
a support plate on which the substrate is placed;
a focus ring disposed on the support plate and provided to surround the substrate placed on the support plate;
A lift pin for raising and lowering the focus ring;
The lift pins are provided in a space formed by a hole formed in the support plate and the focus ring,
The gap formed by the lift pin and the space is formed to a length through which the plasma does not flow. According to claim 9,
The diameter of the hole of the support plate is formed larger than the diameter of the lift pin,
The gap may be a first gap between a lower surface of the focus ring and an upper surface of the lift pin in a state in which the focus ring is not raised by the lift pin, and a second gap between an inner circumferential surface of the hole and an outer circumferential surface of the lift pin. including gaps;
The first gap and the second gap are formed to a length in which the plasma does not flow. According to claim 10,
When the central axis of the lift pin coincides with the central axis of the hole of the support plate, the second gap is formed to a length through which the plasma does not flow. According to claim 10,
A substrate processing apparatus formed to a length at which the plasma does not flow when the center axis of the lift pin does not coincide with the center axis of the hole of the support plate. According to claim 10,
A substrate processing apparatus having a length at which the plasma does not flow when the lift pin contacts an inner circumferential surface of the hole of the support plate. According to claim 9,
The focus ring includes a first ring provided to surround the substrate placed on the support plate, and a second ring disposed below the first ring and having a through hole formed therein,
The lift pin includes a pin portion provided to be inserted into the through hole and having a first diameter, and a body portion coupled to the pin portion and having a second diameter greater than the first diameter;
The gap is a third gap between the lower surface of the focus ring and the upper surface of the pin portion of the lift pin in a state in which the focus ring is not raised by the lift pin, and a gap between an inner circumferential surface of the hole of the support plate and the lift pin. a fourth gap between an outer circumferential surface of the pin portion and a fifth gap between an inner circumferential surface of the hole of the support plate and an outer circumferential surface of the body portion of the lift pin;
The third gap, the fourth gap, and the fifth gap are formed to a length in which the plasma does not flow. According to claim 14,
A drive unit for driving the lift pin to move up and down and to rotate;
The lift pin,
When viewed from above, the first ring is moved up and down at a first position where the pin part of the lift pin overlaps the through hole,
When viewed from above, the support unit of the lift pin overlaps with the second ring and is provided to raise and lower the second ring at a second position out of the first position. According to claim 9,
The focus ring includes a first ring provided to surround the substrate placed on the support plate, and a second ring provided below the first ring and having a through hole formed therein,
The lift pin is provided to be inserted into the through hole, and has a hollow shaft shape in which a first pin for lifting and lowering the first ring and a through hole through which the first pin passes are formed inside for lifting and lowering the second ring. Including the second pin of,
The gap is a sixth gap between the lower surface of the first ring and the upper surface of the first pin in a state in which the focus ring is not raised by the lift pin, and a gap between the lower surface of the focus ring and the second pin. A seventh gap between the upper surface, an eighth gap between the inner circumferential surface of the through hole of the second ring and the outer circumferential surface of the first pin, and a ninth gap between the inner circumferential surface of the hole of the support plate and the outer circumferential surface of the second pin. including gaps;
The sixth gap, the seventh gap, the eighth gap, and the ninth gap are formed to a length in which the plasma does not flow. According to claim 16,
A tenth gap is formed between the inner circumferential surface of the through hole of the second fin and the outer circumferential surface of the first fin,
The tenth gap is formed to a length through which the plasma does not flow. According to claim 16,
A driving unit for independently driving the first pin and the second pin;
The first pin passes through the through hole of the second ring to raise the first ring from the support plate to a first height,
The second pin raises the second ring from the support plate to a second height,
The first height is formed higher than the second support unit. The method of any one of claims 9 to 18,
The substrate processing apparatus of claim 1 , wherein a length to which the plasma is not introduced is three times or less than a Debye Length.

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